Processing method and semiconductor device manufacturing method

Abstract

The invention relates to a processing method and a semiconductor device manufacturing method. A method of processing a substrate having a first surface with a peripheral portion lower than a central portion and forming a second surface that is flatter than the first surface is provided. The method includes: forming a planarizing film on at least an outer peripheral portion by placing a curable composition on a substrate, bringing an overlying layer into contact with the curable composition, and curing the curable composition; and performing CMP before or after the formation. The second surface is formed by the forming and performing CMP.

Description

Technical Field

[0001] This disclosure relates to processing methods and semiconductor device manufacturing methods. Background Technology

[0002] In the fabrication of semiconductor devices, damascene processes can be used to form wiring patterns using metals such as copper. In damascene processes, after forming a metal film to fill trenches created in an interlayer dielectric film, a portion of the metal film covering the interlayer dielectric film is removed in a chemical mechanical polishing (CMP) step. At this point, the outer portion of the interlayer dielectric film is easier to polish than the central portion, and the flatness of the upper surface of the interlayer dielectric film deteriorates.

[0003] Alternatively, in the manufacture of semiconductor devices, after a photoresist film is formed on the substrate for photolithography, the photoresist film and the film beneath it can be removed by etching to prevent contamination on the substrate. This process is called edge bead removal (EBR). Once the EBR process is performed, the portion that has undergone the EBR process and the area within that portion will tilt and its flatness will deteriorate due to subsequent planarization steps. This is because, in subsequent processes, when the substrate is bonded to another substrate, patterning defects or bonding defects may occur. Summary of the Invention

[0004] This disclosure provides a technique that helps reduce problems caused by the deterioration of the flatness of the outer peripheral portion or adjacent portion of a substrate.

[0005] A first aspect of this disclosure includes a processing method for processing a substrate having a first surface having an outer peripheral portion lower than a central portion, and forming a second surface that is flatter than the first surface, the method comprising: forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, contacting an overlayer with the curable composition and curing the curable composition; and performing CMP before or after the formation, wherein the second surface is formed by the formation and the performance of CMP.

[0006] A second aspect of this disclosure includes a processing method comprising: forming a resist pattern on a substrate; forming a protective film on at least a peripheral portion of the substrate by placing a curable composition on the substrate, contacting an overlayer with the curable composition, and curing the curable composition; and etching the substrate on which the protective film has been formed.

[0007] A third aspect of this disclosure includes a method for manufacturing a semiconductor device, comprising: a first step of processing a substrate having a first surface having an outer peripheral portion lower than a central portion; and a second step of obtaining a semiconductor device by further processing the substrate having undergone the first step, wherein the first step comprises: forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, contacting an overlayer with the curable composition, and curing the curable composition; and performing chemical mechanical polishing (CMP) before or after forming the planarization film, wherein a second surface that is flatter than the first surface is formed by the first step.

[0008] The features of this disclosure will become clear from the following description of embodiments with reference to the accompanying drawings. The following description of the embodiments will be given by way of example. Attached Figure Description

[0009] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the embodiments.

[0010] Figure 1 This is a view showing an example arrangement of the flattening device;

[0011] Figure 2A and Figure 2B This is a view showing an example of the arrangement of the substrate;

[0012] Figures 3A to 3E This is an exemplary schematic cross-sectional view showing the processing method according to the first and second embodiments;

[0013] Figures 4A to 4C This is an exemplary schematic cross-sectional view showing the processing method according to the first embodiment;

[0014] Figures 5A to 5C This is an exemplary schematic cross-sectional view showing the processing method according to the second embodiment;

[0015] Figures 6A to 6C This is an exemplary schematic cross-sectional view showing the processing method according to the third embodiment;

[0016] Figures 7A to 7D This is an exemplary schematic cross-sectional view showing the processing method according to the third embodiment;

[0017] Figures 8A to 8D These are schematic cross-sectional views illustrating, by way of example, the processing methods according to the fourth and fifth embodiments;

[0018] Figures 9A to 9C This is an exemplary schematic cross-sectional view showing the processing method according to the fourth embodiment;

[0019] Figures 10A to 10CThis is an exemplary schematic cross-sectional view showing the processing method according to the fifth embodiment;

[0020] Figures 11A to 11D These are schematic cross-sectional views illustrating, by way of example, the processing methods according to the sixth and seventh embodiments;

[0021] Figures 12A to 12C This is an exemplary schematic cross-sectional view showing the processing method according to the sixth embodiment;

[0022] Figures 13A to 13C This is an exemplary schematic cross-sectional view showing the processing method according to the seventh embodiment;

[0023] Figures 14A to 14D These are schematic cross-sectional views illustrating, by way of example, the processing methods according to the eighth and ninth embodiments;

[0024] Figures 15A to 15C This is an exemplary schematic cross-sectional view showing the processing method according to the eighth embodiment;

[0025] Figures 16A to 16C This is an exemplary schematic cross-sectional view showing the processing method according to the ninth embodiment;

[0026] Figures 17A to 17C These are schematic cross-sectional views illustrating, by way of example, the processing methods according to the tenth and eleventh embodiments;

[0027] Figures 18A to 18C This is an exemplary schematic cross-sectional view showing the processing method according to the tenth embodiment;

[0028] Figures 19A to 19C This is an exemplary schematic cross-sectional view showing the processing method according to the eleventh embodiment;

[0029] Figures 20A to 20D This is an exemplary schematic cross-sectional view showing the processing method according to the twelfth embodiment;

[0030] Figures 21A to 21C This is an exemplary schematic cross-sectional view showing the processing method according to the twelfth embodiment;

[0031] Figures 22A to 22C This is an exemplary schematic cross-sectional view showing the processing method according to the thirteenth embodiment;

[0032] Figure 23A and Figure 23B This is an exemplary schematic cross-sectional view showing the processing method according to the thirteenth embodiment;

[0033] Figures 24A to 24C This is an exemplary schematic cross-sectional view showing the processing method according to the fourteenth embodiment;

[0034] Figures 25A to 25C This is an exemplary schematic cross-sectional view showing the processing method according to the fourteenth embodiment;

[0035] Figure 26A and Figure 26B This is an exemplary view showing the height distribution of the substrate surface after the CMP step;

[0036] Figure 27 This is an exemplary view showing an array of multiple exposure areas on a substrate; and

[0037] Figures 28A to 28C This is an exemplary schematic cross-sectional view showing the modified processing method according to the seventh embodiment. Detailed Implementation

[0038] In the following, embodiments will be described in detail with reference to the accompanying drawings. It should be noted that the following embodiments are not intended to limit the scope of the claims. Several features are described in the embodiments, but not all such features are necessary, and multiple such features can be appropriately combined. Furthermore, in the drawings, the same or similar constructions are given the same reference numerals, and repeated descriptions thereof are omitted.

[0039] The processing method described below includes a film-forming step, which involves placing a curable composition on a substrate, bringing an overlayer into contact with the curable composition, and curing the curable composition to form a planarization film. An example arrangement of a film-forming apparatus (IAP) for forming a planarization film will first be described. Figure 1 An example arrangement of a planarization apparatus IAP, which can be used to form a planarization film in a film-forming step, is schematically illustrated. The film-forming apparatus IAP forms a planarization film using inkjet adaptive planarization (IAP) technology. More specifically, the planarization apparatus IAP forms a planarization film on a substrate S using an upper coating layer SS as a mold with a planar surface. The planarization apparatus IAP can form a planarization film by placing a curable composition CM on the substrate S, bringing the upper coating layer SS into contact with the curable composition CM, and curing the curable composition CM.

[0040] As a curable composition CM, a composition that is cured by receiving curing energy (also known as resin in an uncured state) is used. The curing energy used is electromagnetic waves, heat, etc. Electromagnetic waves are light selected from the wavelength range of 10 nm (inclusive) to 1 mm (inclusive), such as infrared light, visible light, ultraviolet light, etc. A curable composition CM can be understood as a composition cured by light irradiation or a composition cured by heat. Specifically, a photocurable composition that is photocurable contains at least a polymerizable compound and a photopolymerization initiator, and may contain a non-polymerizable compound or solvent as needed. The non-polymerizable compound is at least one material selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, and a polymer component. The curable composition CM can be applied to a substrate in the form of droplets, or in the form of islands or films formed by connecting multiple droplets using a liquid spray nozzle. Alternatively, the curable composition CM can be applied to the substrate in the form of a film using a spin coater or a slot coater. The viscosity (viscosity at 25°C) of the curable composition CM is, for example, from 1 mPa·s (inclusive) to 100 mPa·s (inclusive).

[0041] The planarization apparatus IAP may include: a substrate stage WS including a substrate chuck WC for holding a substrate S, and a substrate driving mechanism WSD for driving the substrate stage WS. The planarization apparatus IAP may also include an upper cover driving mechanism SSD for holding and driving an upper cover layer SS. The substrate driving mechanism WSD and the upper cover driving mechanism SSD constitute a relative driving mechanism that drives at least one of the substrate S and the upper cover layer SS to adjust the relative position between the substrate S and the upper cover layer SS. The adjustment of the relative position by the relative driving mechanism includes driving the upper cover layer SS into contact with a curable composition CM on the substrate S and driving the upper cover layer SS to separate the cured product of the curable composition CM. The adjustment of the relative position by the relative driving mechanism also includes alignment between the substrate S and the upper cover layer SS. The substrate driving mechanism WSD may be configured to drive the substrate S relative to multiple axes (e.g., three axes including the X-axis, Y-axis, and θZ-axis, and preferably six axes including the X-axis, Y-axis, Z-axis, θX-axis, θY-axis, and θZ-axis). The overcoat drive mechanism SSD can be configured to drive the overcoat SS relative to multiple axes (e.g., three axes including the Z-axis, θX-axis, and θY-axis, and preferably six axes including the X-axis, Y-axis, Z-axis, θX-axis, θY-axis, and θZ-axis). The planarization device IAP can include a pressure controller CPC that controls the three-dimensional shape of the overcoat SS by adjusting the pressure in the sealed space SP formed on the rear surface of the overcoat SS. By adjusting the pressure in the sealed space SP by the pressure controller CPC, the overcoat can be deformed into a downwardly convex shape or planarized.

[0042] The planarization apparatus IAP may include one or more alignment oscilloscopes AS for measuring alignment errors between a substrate S and an overcoat layer SS. The planarization apparatus IAP may include a curing unit CU that forms a planarization film by applying curing energy to a curable composition CM via the overcoat layer SS to cure the curable composition CM. The curing unit CU may include a light source LS that generates light as curing energy and an optical system OP that uses the light from the light source LS to irradiate the curable composition CM on the substrate S. The curing unit CU may also include an adjustment unit BM for adjusting the light irradiation area so that a predetermined portion (a portion of the peripheral portion of the substrate) of the curable composition CM on the substrate S is irradiated with light (curing energy). The adjustment unit BM may include a light-shielding member positioned offset from the imaging plane (or a plane conjugate to the imaging plane) of the optical system OP. The distance between the imaging plane (or a plane conjugate to the imaging plane) of the optical system OP and the light-shielding member can be determined to adjust the intensity distribution of the light applied to the curable composition CM on the substrate S by the curing unit CU. Increasing this distance increases the width of the variation between the maximum and minimum light intensity regions on the imaging plane of the optical system OP. Conversely, decreasing this distance decreases the width of the variation between the maximum and minimum light intensity regions. The adjustment unit BM may include, for example, a digital mirror device (DMD) that controls the irradiation area or intensity distribution of light (curing energy). The intensity distribution can be adjusted by time-division controlling the corresponding mirrors constituting the DMD. The DMD can be placed on a plane conjugate to the imaging plane of the optical system OP.

[0043] The planarization apparatus IAP may include a dispenser DP for applying or distributing a curable composition CM onto a substrate S. The planarization apparatus IAP may include an off-axis oscilloscope OAS for detecting the position of alignment marks on the substrate S. The planarization apparatus IAP may include a control unit CNT for controlling corresponding components of the planarization apparatus IAP. The control unit CNT is an information processing device, which may be formed, for example, by a PLD (an abbreviation for programmable logic device) (such as an FPGA (an abbreviation for field-programmable gate array)), an ASIC (an abbreviation for application-specific integrated circuit), a programmed computer, or a combination of some or all of these.

[0044] Figure 2A and Figure 2B The arrangement of substrate S is schematically shown. Figure 2A This is a schematic plan view of the surface of substrate S when viewed from its normal direction. Figure 2B It is along Figure 2AA schematic cross-sectional view taken along line A-A'. The substrate S may have a first surface US1, the outer peripheral portion PP of which is lower than the central portion CP. The outer peripheral portion PP may be a portion that has undergone EBR processing, or include portions that have undergone EBR processing. Alternatively, the outer peripheral portion PP may be a beveled portion. The distance between the boundary BDR between the outer peripheral portion PP and the central portion CP and the outer edge OE may be, for example, a distance falling within the range of 3 mm to 5 mm. Figure 2B In the example shown, although there is a distinct step between the central portion CP and the outer peripheral portion PP, the outer peripheral portion PP can be a portion where the height gradually decreases from the boundary BDR to the outer edge OE. The first surface US1 can be formed of any of, for example, an insulator, an interlayer dielectric film, or a semiconductor substrate. Note that, Figures 3A to 1 The cross-sectional views shown in 9 are all along... Figure 2A A schematic cross-sectional view of the line A-A' in the diagram.

[0045] The processing method according to this embodiment can form a second surface US2 that is flatter than the first surface US1 by processing a substrate S having a first surface where the outer peripheral portion PP is lower than the central portion CP. The processing method according to this embodiment may include a film-forming step, which involves placing a curable composition on the substrate S, contacting an overlayer with the curable composition, and curing the curable composition to form a planarization film on at least the outer peripheral portion PP. The processing method according to this embodiment may also include a CMP step performed before or after the film-forming step. The second surface US2 can be formed on the substrate S by the film-forming step and the CMP step. The fact that the second surface US2 is flatter than the first surface US1 means, for example, that the maximum height difference of the second surface is less than the maximum height difference of the first surface.

[0046] The following will refer to Figures 3A to 3E and Figure 4C The processing method according to the first embodiment is described exemplarily. First, reference will be made to... Figure 3A and Figure 3B The preparation steps for fabricating a substrate S having a first surface US1 with an outer peripheral portion PP lower than a central portion CP are described. Unless otherwise expressly specified, the preparation steps are not necessary steps in the processing method according to this disclosure, and the substrate S having a first surface US1 with an outer peripheral portion PP lower than a central portion CP can be provided as a target for performing the processing method according to this disclosure.

[0047] exist Figure 3A In the steps shown, a semiconductor substrate S' can be fabricated having an initial first surface US' with an initial peripheral portion PP' lower than the initial central portion CP'. The central portion CP' of the semiconductor substrate S' may have one or more trenches TR1. Figure 3BIn the steps shown, an insulating film IF can be formed on the surface US' of the semiconductor substrate S'. The insulating film IF can be formed to fill the trench TR1 with an insulator. The insulating film IF can be formed from, for example, silicon oxide, silicon nitride, or silicon oxynitride. Figure 3A and Figure 3B The steps shown indicate that a substrate S having a first surface US1 with an outer peripheral portion PP lower than the central portion CP is fabricated. In this example, the first surface US1 is formed by an insulating film IF placed in a trench TR1 disposed in the semiconductor substrate S' and on the surface of the semiconductor substrate S'.

[0048] The film formation step and the CMP step will be described below. In the first embodiment, the CMP step is performed before the film formation step. Figure 3C The CMP step is illustrated schematically. In the CMP step, the insulating film IF is polished. While the surface of the insulating film IF can be properly planarized at the central portion CP of the substrate S during the CMP step, the surface of the insulating film IF is not planarized at the outer peripheral portion PP of the substrate S. Therefore, a sloping surface inclined towards the outer edge of the substrate S can be formed. Figure 26A and Figure 26B An exemplary illustration shows the height distribution of the substrate S surface after a CMP step relative to the insulating film IF. Reference numerals PA, PB, and PC denote the center of the substrate S, the inner edge position of the inclined surface, and the outer edge position of the substrate S, respectively. On a substrate S with a diameter of 300 mm, PC–PB can be, for example, approximately 3 mm to 5 mm. Reference numeral ΔH denotes the height difference of the inclined surface and can be, for example, approximately 3 μm to 5 μm. With the inclined surface formed on the outer peripheral portion PP, as subsequent stacking steps proceed, the initial position of the inclination on the layer forming the outermost surface gradually moves inward toward the substrate S. This can cause problems in the photolithography step (patterning step). Therefore, in the first embodiment, a film deposition step can be performed after the CMP step.

[0049] The following will refer to Figure 3D , Figure 3E , Figure 4A and Figure 4B This describes a film-forming step performed after the CMP step. The aforementioned film-forming apparatus IAP can be applied to this step. In this step, a planarization film PF is formed on at least the outer peripheral portion of the PP by placing a curable composition CM on the surface of the substrate S after the CMP step, bringing the top coating SS into contact with the curable composition CM, and curing the curable composition CM. More specifically, firstly, in Figure 3DIn the steps shown, the curable composition CM can be placed on the surface of the substrate S using a dispenser DP in a film-forming apparatus IAP. In this case, the curable composition CM can be placed on the surface of the substrate S in droplet form. Figure 3E In the steps shown, the top cover layer SS is brought into contact with the curable composition CM placed on the surface of the substrate S, and the space between the surface of the substrate S and the top cover layer SS is filled with the curable composition CM.

[0050] exist Figure 4A In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the curing energy CE irradiates the portion (predetermined portion) of the curable composition CM located on the outer peripheral portion PP on the surface of the substrate S. The adjustment unit BM can adjust the intensity distribution of the curing energy CE applied to the curable composition CM. More specifically, the adjustment unit BM irradiates the portion of the curable composition CM on the surface of the substrate S that extends a predetermined distance D from the outer edge OE of the substrate S with the curing energy CE. The predetermined distance D can be greater than the width of the outer peripheral portion PP in the diameter direction of the substrate S. Alternatively, the predetermined distance D can be less than the width of the outer peripheral portion PP in the diameter direction of the substrate S. The predetermined distance D can be determined according to the surface shape of the substrate S.

[0051] From another perspective, the adjustment unit BM can adjust the intensity distribution so that a first portion P1 of the curable composition CM on the surface of the substrate S, extending a first distance D1 from the outer edge OE of the substrate S, is irradiated with a curing energy CE having a first intensity. Furthermore, the adjustment unit BM can adjust the intensity distribution so that a second portion P2, positioned adjacent to the inner side of the first portion P1, is irradiated with a curing energy CE such that the intensity gradually decreases from a first intensity to a second intensity towards the center of the substrate S. The second intensity is, for example, 0 or an intensity that substantially inhibits the curing of the curable composition (the same applies below). After the curing step, the first portion P1 of the curable composition CM on the surface of the substrate S is cured, and the degree of curing of the second portion P2 gradually decreases towards the center of the substrate S. Accordingly, a planarization film PF formed from the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0052] exist Figure 4BIn the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. Using the film-forming step described above, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S. Using this step, a second surface US2 is formed from the exposed portions of the planarization film PF and the insulating film IF. The second surface US2 is a flatter surface than the first surface US1.

[0053] Subsequently, Figure 4C In the steps shown, unnecessary insulating film IF is removed from the surface of the semiconductor substrate S', while leaving insulating film IF (insulator INS) in the trench TR1. This step may include a second CMP step. This allows for obtaining an STI structure where the trench TR1 is filled with insulator INS.

[0054] Next, we will refer to Figures 3A to 3E and Figures 5A to 5C The processing method according to the second embodiment is described exemplarily. The second embodiment is a modification of the first embodiment. In the film formation step according to the second embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. From another perspective, the difference between the curing energy and the irradiation area of ​​the curable composition CM in the second embodiment and the first embodiment is that the curing energy CE can be applied to the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0055] In the second embodiment Figures 3A to 3E The steps shown can be the same as those in the first embodiment. In the second embodiment, in Figure 3E After the steps shown, in Figure 5A In the curing step shown, the curing unit CU irradiates the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with curing energy CE to cure the curable composition CM. In other words, in the second embodiment, in Figure 5A In the curing step shown, the curing unit CU cures the entire curable composition CM on the substrate S by irradiating it with curing energy CE. This transforms the entire curable composition CM on the substrate S into a planarization film PF.

[0056] exist Figure 5B In the steps shown, the overcoat layer SS is separated from the planarization film PF. This is used to form a second surface US2 using the planarization film PF. The second surface US2 is a flatter surface than the first surface US1. Figure 5CIn the steps shown, unnecessary insulating film IF is removed from the surface of the semiconductor substrate S', while leaving insulating film IF (insulator INS) in the trench TR1. This step may include, for example, a second CMP step. Using this step, an STI structure with trench TR1 filled with insulator INS is obtained.

[0057] The following will refer to Figures 6A to 6C and Figures 7A to 7D A processing method according to a third embodiment is described exemplarily. Reference will be made to... Figure 6A A substrate S is described having a first surface US1 with an outer peripheral portion PP lower than a central portion CP. The substrate S may have one or more trenches TR1 in the central portion CP. The substrate S may be formed from a semiconductor substrate S'. The first surface US1 may be formed from the semiconductor substrate S'. In other words, the first surface US1 may be a surface of the semiconductor substrate S'.

[0058] The film formation step and the CMP step will be described below. In the third embodiment, the CMP step is performed after the film formation step. (Refer to...) Figure 6B , Figure 6C , Figure 7A and Figure 7B Describes the film-forming step performed prior to the CMP step. The aforementioned film-forming apparatus IAP can be applied to this step. In this step, a planarization film PF is formed on at least the outer peripheral portion of the PP by placing a curable composition CM on the first surface US1 of the substrate S, bringing the upper coating layer SS into contact with the curable composition CM, and curing the curable composition CM. More specifically, firstly, in Figure 6B In the steps shown, the curable composition CM can be placed on the first surface US1 of the substrate S using the dispenser DP in the film-forming apparatus IAP. In this case, the curable composition CM can be placed on the first surface US1 of the substrate S in a droplet state. Figure 6C In the steps shown, the top cover layer SS is brought into contact with the curable composition CM placed on the first surface US1 of the substrate S, and the space between the first surface US1 of the substrate S and the top cover layer SS is filled with the curable composition CM.

[0059] exist Figure 7AIn the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the portion (predetermined portion) of the curable composition CM located on the outer peripheral portion PP on the first surface US1 of the substrate S is irradiated with curing energy CE. The adjustment unit BM can adjust the intensity distribution of the curing energy CE applied to the curable composition CM. More specifically, the adjustment unit BM irradiates, for example, the portion of the curable composition CM on the first surface US1 of the substrate S extending a predetermined distance D from the outer edge OE of the substrate S. The predetermined distance D can be greater than the width of the outer peripheral portion PP in the diameter direction of the substrate S. Alternatively, the predetermined distance D can be less than the width of the outer peripheral portion PP in the diameter direction of the substrate S. The predetermined distance D can be determined according to the surface shape of the first surface US1 of the substrate S.

[0060] From another perspective, the adjustment unit BM can adjust the intensity distribution so that a first portion P1 of the curable composition CM on the first surface US1 of the substrate S, extending a first distance D1 from the outer edge OE of the substrate S, is irradiated with a curing energy CE having a first intensity. Furthermore, the adjustment unit BM can adjust the intensity distribution of the curing energy CE so that a second portion P2, positioned adjacent to the inner side of the first portion P1, is irradiated with a curing energy CE having an intensity that gradually decreases from a first intensity to a second intensity towards the center of the substrate S. After the curing step, the first portion P1 of the curable composition CM on the first surface US1 of the substrate S is cured, and the degree of curing of the second portion P2 gradually decreases towards the center of the substrate S. Accordingly, a planarization film PF formed from the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0061] exist Figure 7B In the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. The removal step is performed to expose the trench TR1 placed in the central portion CP. Using the film formation steps described above, the planarization film PF is formed at least on the outer peripheral portion PP of the substrate S.

[0062] exist Figure 7C In the filling step shown, an insulating film IF can be formed on the surface US of the substrate S. The insulating film IF is formed to fill the trench TR1 with an insulator. The insulating film IF can be formed from, for example, silicon oxide, silicon nitride, or silicon oxynitride. Figure 7DIn the CMP step shown, the unnecessary insulating film IF on the surface of the substrate S (semiconductor substrate S') is polished, leaving the insulating film IF (insulator INS) in the trench TR1. This yields an STI structure where the trench TR1 is filled with the insulator INS. Using this step, a second surface US2 is formed from the surface of the planarization film PF and the surface of the substrate S. The second surface US2 is a flatter surface than the first surface US1.

[0063] The following will refer to Figures 8A to 8D and Figures 9A to 9C The processing method according to the fourth embodiment will be described exemplarily. First, reference will be made to... Figure 8A and Figure 8B The preparation steps for fabricating a substrate S having a first surface US1 with an outer peripheral portion PP lower than a central portion CP are described. Unless otherwise expressly specified, the preparation steps are not necessary steps in the processing method according to this disclosure, and the substrate S having a first surface US1 with an outer peripheral portion PP lower than a central portion CP can be provided as a target for performing the processing method according to this disclosure.

[0064] exist Figure 8A In the steps shown, a semiconductor substrate S' can be fabricated having an initial first surface US' with an initial peripheral portion PP' lower than the initial central portion CP'. The central portion CP' of the substrate S' may have one or more trenches TR1. Figure 8B In the filling step shown, an insulating film IF can be formed on the surface US' of the semiconductor substrate S'. The insulating film IF can be formed to fill the trench TR1 with an insulator. The insulating film IF can be formed from, for example, silicon oxide, silicon nitride, or silicon oxynitride. Figure 8A and Figure 8B The steps shown indicate that a substrate S having a first surface US1 with an outer peripheral portion PP lower than the central portion CP is fabricated. In this example, the first surface US1 is formed by an insulating film IF placed in a trench TR1 disposed in the semiconductor substrate S' and on the surface of the semiconductor substrate S'.

[0065] The following will refer to Figure 8C , Figure 8D , Figure 9A and Figure 9B Describes the film-forming step performed prior to the CMP step. The aforementioned film-forming apparatus IAP can be applied to this step. In this step, a planarization film PF is formed at least on the outer peripheral portion of the PP by placing a curable composition CM on the first surface US1 of the substrate S, bringing the upper coating layer SS into contact with the curable composition CM, and curing the curable composition CM. More specifically, firstly, in Figure 8CIn the steps shown, the curable composition CM is placed on the first surface US1 of the substrate S using the dispenser DP in the film-forming apparatus IAP. In this case, the curable composition CM can be placed on the first surface US1 of the substrate S in a droplet state. Figure 8C In the steps shown, the top cover layer SS is brought into contact with the curable composition CM placed on the first surface US1 of the substrate S, and the space between the first surface US1 of the substrate S and the top cover layer SS is filled with the curable composition CM.

[0066] exist Figure 9A In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the portion (predetermined portion) of the curable composition CM located on the outer peripheral portion PP on the first surface US1 of the substrate S is irradiated with curing energy CE. The adjustment unit BM can adjust the intensity distribution of the curing energy CE applied to the curable composition CM. More specifically, the adjustment unit BM irradiates, for example, the portion of the curable composition CM on the first surface US1 of the substrate S extending a predetermined distance D from the outer edge OE of the substrate S. The predetermined distance D can be greater than the width of the outer peripheral portion PP in the diameter direction of the substrate S. Alternatively, the predetermined distance D can be less than the width of the outer peripheral portion PP in the diameter direction of the substrate S. The predetermined distance D can be determined according to the surface shape of the first surface US1 of the substrate S.

[0067] From another perspective, the adjustment unit BM can adjust the intensity distribution so that a first portion P1 of the curable composition CM on the first surface US1 of the substrate S, extending a first distance D1 from the outer edge OE of the substrate S, is irradiated with a curing energy CE having a first intensity. Furthermore, the adjustment unit BM can adjust the intensity distribution of the curing energy CE so that a second portion P2, positioned adjacent to the inner side of the first portion P1, is irradiated with a curing energy CE having an intensity that gradually decreases from a first intensity to a second intensity towards the center of the substrate S. After the curing step, the first portion P1 of the curable composition CM on the first surface US1 of the substrate S is cured, and the degree of curing of the second portion P2 gradually decreases towards the center of the substrate S. Accordingly, a planarization film PF formed from the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0068] exist Figure 9BIn the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. Using the above-described film-forming steps, the planarization film PF is formed at least on the outer peripheral portion PP of the substrate S.

[0069] A CMP step is performed after the film formation step. More specifically, such as... Figure 9C As shown, in the CMP step, the unnecessary insulating film IF on the surface of the substrate S (semiconductor substrate S') is polished, while leaving the insulating film IF (insulator INS) in the trench TR1. This yields an STI structure where the trench TR1 is filled with the insulator INS. Using this step, a second surface US2 is formed from the surface of the planarization film PF and the surface of the substrate S (semiconductor substrate S'). The second surface US2 is a flatter surface than the first surface US1.

[0070] Next, we will refer to Figures 8A to 8D and Figures 10A to 10C The processing method according to the fifth embodiment is described exemplarily. The fifth embodiment is a modification of the fourth embodiment. In the film formation step according to the fifth embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. From another perspective, the difference between the curing energy and the irradiation area of ​​the curable composition CM in the fifth embodiment and the fourth embodiment is that the curing energy CE can be applied to the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0071] Fifth embodiment Figures 8A to 8D The steps shown can be the same as those in the fourth embodiment. In the fifth embodiment, in Figure 8D After the steps shown, in Figure 10A In the curing step shown, the curing unit CU irradiates the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with curing energy CE to cure the curable composition CM. In other words, in the fifth embodiment, in Figure 10A In the curing step shown, the curing unit CU cures the entire curable composition CM on the substrate S by irradiating it with curing energy CE. This transforms the entire curable composition CM on the substrate S into a planarization film PF.

[0072] exist Figure 10B In the steps shown, the topcoat layer SS is separated from the planarization film PF. This is used to form the second surface US2 using the planarization film PF. Using the above film formation steps, the planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0073] A CMP step is performed after the film formation step. More specifically, such as... Figure 10C As shown, in the CMP step, the unnecessary insulating film IF on the surface of the substrate S (semiconductor substrate S') is polished, while leaving the insulating film IF (insulator INS) in the trench TR1. This yields an STI structure where the trench TR1 is filled with the insulator INS. Using this step, a second surface US2 is formed from the surface of the planarization film PF and the surface of the substrate S. The second surface US2 is a flatter surface than the first surface US1.

[0074] The following will refer to Figures 11A to 11D and Figures 12A to 12C The processing method according to the sixth embodiment is described exemplarily. First, reference will be made to... Figure 11A Describes a substrate S having a first surface US1 with an outer peripheral portion PP lower than the central portion CP. The substrate S may be a substrate that has undergone processing according to any of the first to fifth embodiments. The substrate S may have a gate electrode GE disposed on a gate oxide film (not shown) on a semiconductor substrate S'. The substrate S may have an interlayer dielectric film IL on the semiconductor substrate S'. The substrate S may have one or more interlayer dielectric films between the semiconductor substrate S' and the interlayer dielectric film IL.

[0075] The film formation step and the CMP step will be described below. In the sixth embodiment, the CMP step is performed before the film formation step. Figure 11B The CMP step is illustrated schematically. In the CMP step, the interlayer dielectric film IL is polished. In the CMP step, the surface of the interlayer dielectric film IL located at the central portion CP of the substrate S can be properly planarized. However, the surface of the interlayer dielectric film IL located at the outer peripheral portion PP of the substrate S cannot be planarized, and a sloping surface inclined towards the outer edge of the substrate S can be formed. If subsequent stacking steps are performed in this state, the starting position of the sloping layer forming the outermost surface will shift towards the inward direction of the substrate S. This will cause problems for the photolithography step (patterning step). Therefore, in the sixth embodiment, the film deposition step can be performed after the CMP step.

[0076] The following will refer to Figure 11C , Figure 11D , Figure 12A , Figure 12B and Figure 12C This describes a film-forming step performed after the CMP step. The aforementioned film-forming apparatus IAP can be applied to this step. In this step, a planarization film PF is formed on at least the outer peripheral portion of the PP by placing a curable composition CM on the surface of the substrate S after the CMP step, bringing the top coating SS into contact with the curable composition CM, and curing the curable composition CM. More specifically, firstly, in Figure 11C In the steps shown, the curable composition CM can be placed on the surface of the substrate S using a dispenser DP in a film-forming apparatus IAP. In this case, the curable composition CM can be placed on the surface of the substrate S in a droplet state. Figure 11D In the steps shown, the top cover layer SS is brought into contact with the curable composition CM placed on the surface of the substrate S, and the space between the surface of the substrate S and the top cover layer SS is filled with the curable composition CM.

[0077] exist Figure 12A In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the portion (predetermined portion) of the curable composition CM located on the outer peripheral portion PP on the surface of the substrate S is irradiated with curing energy CE. The adjustment unit BM can adjust the intensity distribution of the curing energy CE applied to the curable composition CM. More specifically, the adjustment unit BM irradiates the portion of the curable composition CM on the surface of the substrate S that extends a predetermined distance D from the outer edge OE of the substrate S with curing energy CE. The predetermined distance D can be greater than the width of the outer peripheral portion PP in the diameter direction of the substrate S. Alternatively, the predetermined distance D can be less than the width of the outer peripheral portion PP in the diameter direction of the substrate S. The predetermined distance D can be determined according to the surface shape of the substrate S.

[0078] From another perspective, the adjustment unit BM can adjust the intensity distribution so that a first portion P1 of the curable composition CM on the surface of the substrate S, extending a first distance D1 from the outer edge OE of the substrate S, is irradiated with a curing energy CE having a first intensity. Furthermore, the adjustment unit BM can adjust the intensity distribution of the curing energy CE so that a second portion P2, positioned adjacent to the inner side of the first portion P1, is irradiated with a curing energy CE whose intensity gradually decreases from a first intensity to a second intensity towards the center of the substrate S. After the curing step, the first portion P1 of the curable composition CM on the surface of the substrate S is cured, and the degree of curing of the second portion P2 gradually decreases towards the center of the substrate S. Accordingly, a planarization film PF formed from the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0079] exist Figure 12BIn the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. Using the film-forming steps described above, the planarization film PF is formed at least on the outer peripheral portion PP of the substrate S. Using this step, a second surface US2 is formed from the exposed portions of the planarization film PF and the interlayer dielectric film IL. The second surface US2 is a flatter surface than the first surface US1.

[0080] Subsequently, as Figure 12C As shown, a second CMP step can be performed. This yields a new surface that is flatter than the second surface US2. A resist pattern can be formed on the surface of the substrate S during a photolithography step. This resist pattern can have openings, for example, for forming contact holes.

[0081] Reference Figures 11A to 11D and Figures 13A to 13C The processing method according to the seventh embodiment is described exemplarily. The seventh embodiment is a modification of the sixth embodiment. In the film formation step according to the seventh embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. From another perspective, the difference between the curing energy and the irradiation area of ​​the curable composition CM in the seventh embodiment and the sixth embodiment is that the curing energy CE can be applied to the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0082] In the seventh embodiment Figures 11A to 11D The steps shown can be the same as those in the sixth embodiment. In the seventh embodiment, in Figure 11D After the steps shown, in Figure 13A In the curing step shown, the curing unit CU irradiates the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with curing energy CE to cure the curable composition CM. In other words, in the seventh embodiment, in Figure 13A In the curing step shown, the curing unit CU cures the entire curable composition CM on the substrate S by irradiating it with curing energy CE. This transforms the entire curable composition CM on the substrate S into a planarization film PF.

[0083] exist Figure 13B In the steps shown, the overcoat layer SS is separated from the planarization film PF. This is used to form the second surface US2 using the planarization film PF. Using the above film formation steps, the planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0084] Following the aforementioned film formation steps, a second CMP step can be performed. This yields a new surface that is flatter than the second surface US2. A resist pattern can be formed on the surface of the substrate S during the photolithography step. This resist pattern can have openings, for example, for forming contact holes.

[0085] Note that the overlying SS layer does not always need to be flat. For example, as... Figures 28A to 28C As shown, the topcoat SS can have a shape that slopes from the substrate S toward the outer edge of the substrate S. This slope angle θ can fall within the range of 1° to 10° relative to the plane to which the central portion of the topcoat SS belongs. In this case, the curable composition CM can be placed more (thicker) at the location where it overlaps with the peripheral portion PP than at the location where it overlaps with the central portion of the substrate S. By irradiating the curable composition CM with curing energy CE, the planarization film PF is formed thicker at the location where it overlaps with the peripheral portion PP than at the location where it overlaps with the central portion of the substrate S. In the subsequent CMP step, the planarization film PF is sometimes scraped more at the location where it overlaps with the peripheral portion PP than at the location where it overlaps with the central portion of the substrate S. In this case, as... Figure 28C As shown, in the CMP step, the planarization film PF is scraped more at the location where it overlaps with the outer peripheral portion PP than at the location where it overlaps with the central portion of the substrate S, thereby obtaining a structure with higher flatness. In this way, giving the topcoat layer SS a tapered shape can improve the flatness of the substrate S after the CMP step.

[0086] The following will refer to Figures 14A to 14D and Figures 15A to 15C The processing method according to the eighth embodiment is described exemplarily. First, reference will be made to... Figure 14A Describes a substrate S having a first surface US1 with an outer peripheral portion PP lower than the central portion CP. The substrate S may be a substrate that has undergone processing according to any of the first to fifth embodiments. The substrate S may have a gate electrode (not shown) disposed on a gate oxide film (not shown) on a semiconductor substrate S'. The substrate S may have multiple interlayer dielectric films IL-1 and IL-2 on the substrate S or the semiconductor substrate S'. The substrate S may have one or more other interlayer dielectric films between the semiconductor substrate S' and the interlayer dielectric film IL-1. Furthermore, the substrate S may have a wiring pattern WP, contact plugs, and via plugs between the substrate S and the multiple interlayer dielectric films. Figures 14A to 14D In the example shown, the first surface US1 of the substrate S is uneven due to the presence of the wiring pattern WP.

[0087] The film formation step and the CMP step will be described below. In the eighth embodiment, the CMP step is performed before the film formation step. Figure 14BThe CMP step is illustrated schematically. In the CMP step, the interlayer dielectric film IL-2 is polished. During the CMP step, the surface of the interlayer dielectric film IL-2 can be properly planarized at the central portion CP of the substrate S, while at the outer peripheral portion PP of the substrate S, the surface of the interlayer dielectric film IL-2 is not planarized and a sloping surface inclined towards the outer edge of the substrate S can be formed. In this state, as subsequent stacking steps proceed, the starting position of the sloping surface on the layer forming the outermost surface gradually moves towards the inner side of the substrate S. This poses a problem for the photolithography step (patterning step). Therefore, in the eighth embodiment, the film deposition step can be performed after the CMP step.

[0088] The following will refer to Figure 14C , Figure 14D , Figure 15A and Figure 15B This describes a film-forming step performed after the CMP step. The aforementioned film-forming apparatus IAP can be applied to this step. In this step, a planarization film PF is formed on at least the outer peripheral portion of the PP by placing a curable composition CM on the surface of the substrate S after the CMP step, bringing the top coating SS into contact with the curable composition CM, and curing the curable composition CM. More specifically, firstly, in Figure 14C In the steps shown, the curable composition CM can be placed on the surface of the substrate S using a dispenser DP in a film-forming apparatus IAP. In this case, the curable composition CM can be placed on the surface of the substrate S in a droplet state. Figure 14D In the steps shown, the top cover layer SS is brought into contact with the curable composition CM placed on the surface of the substrate S, and the space between the surface of the substrate S and the top cover layer SS is filled with the curable composition CM.

[0089] exist Figure 15A In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the portion (predetermined portion) of the curable composition CM located on the outer peripheral portion PP on the surface of the substrate S is irradiated with curing energy CE. The adjustment unit BM can adjust the intensity distribution of the curing energy CE applied to the curable composition CM. More specifically, the adjustment unit BM irradiates the portion of the curable composition CM on the surface of the substrate S that extends a predetermined distance D from the outer edge OE of the substrate S with curing energy CE. The predetermined distance D can be greater than the width of the outer peripheral portion PP in the diameter direction of the substrate S. Alternatively, the predetermined distance D can be less than the width of the outer peripheral portion PP in the diameter direction of the substrate S. The predetermined distance D can be determined according to the surface shape of the substrate S.

[0090] From another perspective, the adjustment unit BM can adjust the intensity distribution so that a first portion P1 of the curable composition CM on the surface of the substrate S, extending a first distance D1 from the outer edge OE of the substrate S, is irradiated with a curing energy CE of a first intensity. Furthermore, the adjustment unit BM can adjust the intensity distribution of the curing energy CE so that a second portion P2, positioned adjacent to the inner side of the first portion P1, is irradiated with a curing energy CE of a first intensity gradually decreasing towards the center of the substrate S. After the curing step, the first portion P1 of the curable composition CM on the surface of the substrate S is cured, and the degree of curing of the second portion P2 gradually decreases towards the center of the substrate S. Accordingly, a planarization film PF formed from the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0091] exist Figure 15B In the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. Using the film-forming step described above, the planarization film PF is formed on at least the outer peripheral portion PP of the substrate S. Using this step, a second surface US2 is formed from the exposed portions of the planarization film PF and the interlayer dielectric film IL-2. The second surface US2 is a flatter surface than the first surface US1.

[0092] Subsequently, as Figure 15C As shown, a second CMP step can be performed. This can yield a new surface that is flatter than the second surface US2. A resist pattern can be formed on the surface of the substrate S during a photolithography step. This resist pattern can have openings, for example, for forming contact holes. Alternatively, the resist pattern can have openings for forming trenches for embedding metal patterns in the interlayer dielectric film IL-2.

[0093] Reference Figures 14A to 14D and Figures 16A to 16C The processing method according to the ninth embodiment is described exemplarily. The ninth embodiment is a modification of the eighth embodiment. In the film formation step according to the ninth embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. From another perspective, the difference between the curing energy and the irradiation area of ​​the curable composition CM in the ninth embodiment and the eighth embodiment is that the curing energy CE can be applied to the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0094] Ninth embodiment Figures 14A to 14D The steps shown can be the same as those in the eighth embodiment. In the ninth embodiment, in Figure 14D After the steps shown, in Figure 16A In the curing step shown, the curing unit CU irradiates the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with curing energy CE to cure the curable composition CM. In other words, in the ninth embodiment, in Figure 16A In the curing step shown, the curing unit CU cures the entire curable composition CM on the substrate S by irradiating it with curing energy CE. This transforms the entire curable composition CM on the substrate S into a planarization film PF.

[0095] exist Figure 16B In the steps shown, the overcoat layer SS is separated from the planarization film PF. This is used to form the second surface US2 using the planarization film PF. Using the above film formation steps, the planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0096] Following the aforementioned film formation steps, a second CMP step can be performed. This yields a new surface that is flatter than the second surface US2. A resist pattern can be formed on the surface of the substrate S during the photolithography step. This resist pattern can have openings, for example, for forming contact holes.

[0097] The following will refer to Figures 17A to 17C and Figures 18A to 18C The processing method according to the tenth embodiment will be described exemplarily. First, reference will be made to... Figure 17A Describes a substrate S having a first surface US1 with an outer peripheral portion PP lower than the central portion CP. The substrate S may be a substrate that has undergone processing according to any of the first to fifth embodiments. The substrate S may have a gate electrode (not shown) disposed on a gate oxide film (not shown) on a semiconductor substrate S'. The substrate S may have multiple interlayer dielectric films IL-1 and IL-2 on the substrate S or the semiconductor substrate S'. The substrate S may have multiple other interlayer dielectric films between the semiconductor substrate S and the interlayer dielectric film IL-1. Furthermore, the substrate S may have a wiring pattern WP, contact plugs, and via plugs between the substrate S and the multiple interlayer dielectric films. Figures 17A to 17C In the example shown, the first surface US1 of the substrate S is uneven due to the presence of the wiring pattern WP. Furthermore, the outer peripheral portion PP may have a tilt.

[0098] The film formation step and the CMP step will be described below. In the tenth embodiment, the CMP step is performed after the film formation step. Reference will be made below. Figure 17B , Figure 17C , Figure 18A and Figure 18BThis describes a film-forming step performed prior to the CMP step. The aforementioned film-forming apparatus IAP can be applied to this step. In this step, a planarization film PF is formed at least on the outer peripheral portion of the PP by placing a curable composition CM on the first surface US1 of the substrate S, bringing the upper coating layer SS into contact with the curable composition CM, and curing the curable composition CM. More specifically, firstly, in Figure 17B In the steps shown, the curable composition CM can be placed on the first surface US1 of the substrate S using the dispenser DP in the film-forming apparatus IAP. In this case, the curable composition CM can be placed on the first surface US1 of the substrate S in a droplet state. Figure 17C In the steps shown, the top cover layer SS is brought into contact with the curable composition CM placed on the first surface US1 of the substrate S, and the space between the first surface US1 of the substrate S and the top cover layer SS is filled with the curable composition CM.

[0099] exist Figure 18A In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the portion (predetermined portion) of the curable composition CM located on the outer peripheral portion PP on the first surface US1 of the substrate S is irradiated with curing energy CE. The adjustment unit BM can adjust the intensity distribution of the curing energy CE applied to the curable composition CM. More specifically, the adjustment unit BM irradiates, for example, the portion of the curable composition CM on the first surface US1 of the substrate S extending a predetermined distance D from the outer edge OE of the substrate S. The predetermined distance D can be greater than the width of the outer peripheral portion PP in the diameter direction of the substrate S. Alternatively, the predetermined distance D can be less than the width of the outer peripheral portion PP in the diameter direction of the substrate S. The predetermined distance D can be determined according to the surface shape of the first surface US1 of the substrate S.

[0100] From another perspective, the adjustment unit BM can adjust the intensity distribution so that a first portion P1 of the curable composition CM on the first surface US1 of the substrate S, extending a first distance D1 from the outer edge OE of the substrate S, is irradiated with a curing energy CE having a first intensity. Furthermore, the adjustment unit BM can adjust the intensity distribution of the curing energy CE so that a second portion P2, positioned adjacent to the inner side of the first portion P1, is irradiated with a curing energy CE having an intensity that gradually decreases from a first intensity to a second intensity towards the center of the substrate S. After the curing step, the first portion P1 of the curable composition CM on the first surface US1 of the substrate S is cured, and the degree of curing of the second portion P2 gradually decreases towards the center of the substrate S. Accordingly, a planarization film PF formed from the cured product of the curable composition CM can be formed on at least the outer peripheral portion PP of the substrate S.

[0101] exist Figure 18B In the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. The removal step is performed to expose the interlayer dielectric film IL-2. Using the above-described film formation steps, the planarization film PF is formed at least on the outer peripheral portion PP of the substrate S.

[0102] like Figure 18C As shown, a CMP step is performed to planarize the surface formed by the interlayer dielectric film IL-2 and the planarization film PF. A second surface US2 is formed by the surfaces of the interlayer dielectric film IL-2 and the planarization film PF. The second surface US2 is a flatter surface than the first surface US1.

[0103] Reference Figures 17A to 17C and Figures 19A to 19C The processing method according to the eleventh embodiment is described exemplarily. The eleventh embodiment is a modification of the tenth embodiment. In the film formation step according to the eleventh embodiment, a planarization film PF is formed on the central portion CP and the outer peripheral portion PP of the substrate S. From another perspective, the difference between the curing energy and the irradiation area of ​​the curable composition CM in the eleventh embodiment and that in the fourth embodiment is that the curing energy CE can be applied to the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S.

[0104] In the eleventh embodiment Figures 17A to 17C The steps shown can be the same as those in the tenth embodiment. In the eleventh embodiment, in Figure 17C After the steps shown, in Figure 19AIn the curing step shown, the curing unit CU irradiates the curable composition CM on the central portion CP and the outer peripheral portion PP of the substrate S with curing energy CE to cure the curable composition CM. In other words, in the eleventh embodiment, in Figure 19A In the curing step shown, the curing unit CU cures the entire curable composition CM on the substrate S by irradiating it with curing energy CE. This transforms the entire curable composition CM on the substrate S into a planarization film PF. Figure 19B In the steps shown, the top coating layer SS is separated from the planarization film PF. Using the above film formation steps, the planarization film PF is formed on both the central portion CP and the outer peripheral portion PP of the substrate S.

[0105] The CMP step is performed after the above film-forming steps. More specifically, as follows: Figure 19C As shown, in the CMP step, firstly, the planarization film PF is polished. Then, the interlayer dielectric film IL-2 is polished together with the planarization film PF. This forms a second surface US2 through the surfaces of the planarization film PF and the interlayer dielectric film IL-2. The second surface US2 is a flatter surface than the first surface US1.

[0106] The twelfth embodiment will now be described by way of example. Reference will be made to Figure 27 An array of multiple exposure regions on a substrate S is described exemplarily. Rectangles without patterns represent exposure regions called full-field SFFs, while rectangles with shading patterns represent exposure regions called partial-field SPFs. A full-field SFF is an exposure region that lies entirely within the inner edge of the outer peripheral portion PP. A partial-field SPF is an exposure region whose outer edge is defined by the outer peripheral portion PP. In processes where an exposure region comprises multiple chip regions, chip regions not defined by the outer peripheral portion PP can be used for device (chip) fabrication even if they are partial fields. In contrast, in processes where an exposure region is formed by a single chip region, such as in the fabrication of a full-size (full-frame) image sensor, partial fields are not used. Any partial field not used for device fabrication is referred to as an unused partial field.

[0107] In the exposure step of photolithography, if unused areas are not exposed, for example, using a negative photoresist, no resist film will be left on the unused areas by the development step. Consequently, in the subsequent etching step, the surface flatness of the substrate deteriorates because the entire area of ​​the process target layer in the unused areas is etched. Therefore, typically, even the unused areas are exposed in the exposure step, and a resist pattern can be formed on the unused areas by the development step.

[0108] In damascene processes, if the trenches formed in the interlayer dielectric film of such partial fields are filled with metal, the front-open unified compartment (FOUP) and subsequent process devices may become contaminated with metal. Accordingly, in damascene processes, it is preferable not to form a metal film in the partial fields. See below for reference. Figure 20A Figure 25 is along Figure 27 A schematic cross-sectional view of line B-B' in the diagram.

[0109] The following will refer to Figures 20A to 20D and Figures 21A to 21C The processing method according to the twelfth embodiment is described exemplarily. First, reference will be made to... Figure 20A Describes a substrate S having a first surface US1 with an outer peripheral portion PP lower than the central portion CP. The substrate S may be a substrate that has undergone processing according to any of the first to fifth embodiments. The substrate S may have a gate electrode (not shown) placed on a gate oxide film (not shown) on a semiconductor substrate (not shown). The substrate S may have multiple interlayer dielectric films, such as interlayer dielectric films IL-1, IL-2, and IL-3, disposed on the substrate S or the semiconductor substrate. The substrate S may have one or more other interlayer dielectric films between the semiconductor substrate (not shown) and the interlayer dielectric film IL-1. In this example, the substrate S has a central portion CP and an outer peripheral portion PP. The central portion CP has a full-field SFF and a partial-field SPF. The interlayer dielectric film IL-3 has one or more trenches TR2 disposed in the full-field SFF. The trenches TR2 are used to form wiring patterns. The interlayer dielectric film IL-3 also has one or more dummy trenches TRD disposed in the partial-field SPF. The dummy trench TRD can be formed using a photolithography step using a mask (original) used to form trench TR2 in the full-field SFF. Alternatively, the interlayer dielectric film IL-3, in addition to one or more trench TR2s disposed in the central portion CP (its full-field SFF), may also include dummy trench TRDs disposed in the outer region (partial-field SPF) of the central portion CP. In a single-damascene process, the interlayer dielectric films IL-1 and IL-2 may have via plugs VP facing the trench TR2 in the full-field SFF. In a dual-damascene process, the interlayer dielectric films IL-1 and IL-2 may have vias for forming the via plugs VP to communicate with the trench TR2 in the full-field SFF.

[0110] The film formation step and the CMP step will be described below. In the twelfth embodiment, the CMP step is performed after the film formation step, and more specifically, after the film formation step and the metal film formation step. First, refer to... Figures 20B to 20D and Figure 21AThe film-forming step is described. The aforementioned film-forming apparatus IAP can be applied to the film-forming step. In the film-forming step, a curable composition CM is placed on the first surface US1 of the substrate S, so that the upper coating layer SS comes into contact with the curable composition CM, and the curable composition CM is cured. This forms a planarization film PF not only on the outer peripheral portion PP, but also on at least a portion of the field SPF in the central portion CP. More specifically, firstly, on Figure 20B In the steps shown, the curable composition CM can be placed on the first surface US1 of the substrate S using the dispenser DP in the film-forming apparatus IAP. In this case, the curable composition CM can be placed on the first surface US1 of the substrate S in a droplet state. Figure 20C In the steps shown, the top cover layer SS is brought into contact with the curable composition CM placed on the first surface US1 of the substrate S, and the space between the first surface US1 of the substrate S and the top cover layer SS is filled with the curable composition CM.

[0111] exist Figure 20D In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the curing energy CE irradiates the portion of the curable composition CM located on the peripheral portion PP and the central portion CP on the first surface US1 of the substrate S.

[0112] exist Figure 21A In the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. The removal step is performed to expose the bottom of the trench TR1. Using the above-described film formation steps, the planarization film PF is formed not only on at least the outer peripheral portion PP of the substrate S, but also on a portion of the field SPF in the central portion CP.

[0113] like Figure 21B As shown in the figure, a metal film MF is then formed on the interlayer dielectric film IL-3 to fill the trench TR2 with metal.

[0114] Subsequently, as Figure 21C As shown, a CMP step is performed to expose the upper surface of the interlayer dielectric film IL-3. The second surface US2 is formed by the surface of the interlayer dielectric film IL-3, the surface of the metal film MF, and the surface of the planarization film PF. The second surface US2 is flatter than the first surface US1. The metal film MF (metal) filling the trench TR2 forms a wiring pattern.

[0115] The following will refer to Figures 22A to 22C , Figure 23A and Figure 23B The processing method according to the thirteenth embodiment is described exemplarily. The thirteenth embodiment provides a processing method that facilitates the formation of trenches TR2 in the full-field SFF without forming any dummy trenches TRD in the partial-field SFF.

[0116] exist Figure 22A In the steps shown, a resist pattern RP can be formed on a substrate S having multiple interlayer dielectric films (such as interlayer dielectric films IL-1, IL-2, and IL-3 on a semiconductor substrate (not shown)) by a photolithography step. The resist pattern RP may have an opening OPT for forming a trench TR2 in the interlayer dielectric film IL-3 and a dummy opening OPD for forming a dummy trench TRD.

[0117] Next, as Figure 22B , Figure 22C , Figure 23A and Figure 23B As shown, the film formation step can be performed. First, in Figure 22B In the steps shown, the curable composition CM can be placed on the exposed portions of the resist pattern RP and the substrate S in the film-forming apparatus IAP using a dispenser DP. Figure 22C In the steps shown, the topcoat SS is brought into contact with the curable composition CM, and the space between the resist pattern RP, the exposed portion of the substrate S, and the topcoat SS is filled with the curable composition CM.

[0118] exist Figure 23A In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE. In this case, the adjustment unit BM can adjust the irradiation area so that the curing energy CE irradiates the portions of the curable composition CM located on the peripheral portion PP and the central portion CP on the partial field SPF.

[0119] exist Figure 23B In the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. The removal step is performed to expose the bottom of the opening OPT. Using the film formation steps described above, the peripheral portion PP of the substrate S and the dummy opening OPD are covered by the planarization film PF. In this state, etching the interlayer dielectric film IL-3 through the opening OPT can form trench TR2 in the full-field SFF without forming any dummy trench TRD in the partial-field SPF.

[0120] The following will refer to Figures 24A to 24C and Figures 25A to 25C The processing method according to the fourteenth embodiment is described. The fourteenth embodiment provides a processing method that facilitates the formation of a resist pattern RP and a protective film protecting the outer peripheral portion PP of a substrate S that has undergone an EBR process.

[0121] exist Figure 24A In the steps shown, a resist pattern RP is formed on the substrate S, and a substrate S that has undergone the EBR process is prepared. Figure 24B , Figure 24C , Figure 25A , Figure 25B and Figure 25C As shown, the film formation step can be performed. First, in Figure 24B In the steps shown, the curable composition CM can be placed on the exposed portions of the resist pattern RP and the substrate S in the film-forming apparatus IAP using a dispenser DP. Figure 24C In the steps shown, the topcoat SS is brought into contact with the curable composition CM, and the space between the resist pattern RP, the exposed portion of the substrate S, and the topcoat SS is filled with the curable composition CM.

[0122] exist Figure 25A In the curing step shown, the curing unit CU cures the curable composition CM by irradiating it with curing energy CE, thereby forming a protective film PRF. In this case, the adjustment unit BM can adjust the irradiation area so that the outer peripheral portion PP of the curable composition CM is irradiated with curing energy CE.

[0123] exist Figure 25B In the steps shown, the topcoat layer SS is separated from the uncured curable composition CM and the planarization film PF. A removal step can then be performed to remove the remaining curable composition CM after the curing step. The removal step may include, for example, a wet process to dissolve the curable composition CM. Using the above film-forming steps, a protective film PRF protecting the peripheral portion of PP is formed.

[0124] Note that the EBR process is performed to prevent particle formation when the resist pattern RP comes into contact with FOUP, etc. The protective film PRF is formed from a curable composition that is less prone to particle formation than the constituent materials of the resist pattern RP.

[0125] The semiconductor device manufacturing method will now be described as another embodiment. This semiconductor device manufacturing method may include a first processing step of processing a substrate according to any of the processing methods in the first to fourteenth embodiments, or any combination of these methods, and a second processing step of obtaining a semiconductor device by further processing the substrate that has undergone the first processing step. The second processing step may include at least one of, for example, a dicing step, a sealing step, and a bonding step with another substrate. Where the first processing step includes a step of forming an STI structure, the second processing step may include a step of forming a transistor, a step of forming an interlayer dielectric film, a step of forming a wiring pattern, etc.

[0126] In each of the above embodiments, in the step of irradiating the curable composition CM through the top cover layer SS with curing energy CE, a first gas can be supplied to the outer peripheral portion of the substrate S, and a second gas can be supplied to the central portion of the substrate S. In this case, the oxygen concentration of the first gas is set to be higher than the oxygen concentration of the second gas. When the curable composition CM is cured, the curable composition CM is photopolymerized by the free radicals generated by irradiation with exposure light to cure it. However, the generated free radicals have the property of being trapped by oxygen, so the photopolymerization reaction can be suppressed. By using this property to supply the first gas to the outer peripheral portion of the substrate S, the curing of the curable composition CM leaking from the top cover layer SS can be reduced. This allows the uncured curable composition CM left after the top cover layer SS separates from the planarization film PF to be evaporated. Accordingly, even if the curable composition CM leaks from the top cover layer SS, the curable composition CM can be properly removed by subsequent evaporation. In particular, as described in the fourteenth embodiment, storing the substrate S in a FOUP or the like after the curable composition CM has been sufficiently evaporated can reduce contamination by the FOUP or the like.

[0127] For a method for controlling the curing progress of the curable composition CM by using first and second gases, and for a specific method of supplying the first and second gases, please refer to Japanese Patent Publication No. 2024-29829. Furthermore, as a material used for the curable composition CM, for example, the material described in Japanese Patent Publication No. 2022-188736 may be appropriately used.

[0128] While this disclosure has been described with reference to embodiments, it should be understood that this disclosure is not limited to the disclosed embodiments. The scope of the appended claims should be given the broadest interpretation to cover all such modifications and equivalent structures and functions.

Claims

1. A processing method for processing a substrate having a first surface having an outer peripheral portion lower than a central portion and forming a second surface that is flatter than the first surface, the method comprising: A planarization film is formed on at least the outer peripheral portion by placing a curable composition on a substrate, bringing an overlayer into contact with the curable composition, and curing the curable composition. as well as Chemical mechanical polishing (CMP) is performed before or after the formation. The second surface is formed by the formation and the execution of CMP.

2. The method of claim 1, wherein the forming comprises irradiating a portion of the curable composition on the first surface extending a predetermined distance from the outer edge of the substrate with curing energy.

3. The method according to claim 2, wherein the predetermined distance is greater than the width of the outer peripheral portion in the diametrical direction of the substrate.

4. The method of claim 2, wherein the formation comprises removing the curable composition remaining after the irradiation.

5. The method of claim 1, wherein the forming comprises: The first portion of the curable composition on the first surface, extending a first distance from the outer edge of the substrate, is irradiated with curing energy of a first intensity, and the second portion, placed adjacent to the inner side of the first portion, is irradiated with curing energy of a first intensity gradually decreasing to a second intensity toward the center of the substrate.

6. The method of claim 1, wherein CMP is performed prior to the formation.

7. The method of claim 6, wherein the first surface is formed of an insulator.

8. The method of claim 6, wherein the substrate comprises a semiconductor substrate, and The first surface is formed by an insulator placed in a trench disposed in the semiconductor substrate and on the surface of the semiconductor substrate.

9. The method of claim 6, wherein the substrate comprises a semiconductor substrate, and The first surface is formed by an interlayer dielectric film placed on a semiconductor substrate.

10. The method of claim 1, wherein in the formation, a planarization film is formed on a central portion and an outer peripheral portion.

11. The method of claim 10, further comprising performing a second CMP after the formation.

12. The method of claim 1, wherein CMP is performed after the formation.

13. The method of claim 12, wherein the substrate comprises a semiconductor substrate, and The first surface is formed from a semiconductor substrate.

14. The method of claim 12, wherein the substrate comprises a semiconductor substrate. The first surface includes trenches formed in a semiconductor substrate, and The trench is filled with an insulator after it is formed and before CMP is performed.

15. The method of claim 12, wherein the substrate comprises a semiconductor substrate, and The first surface is formed by an insulator placed in a trench disposed in the semiconductor substrate and on the surface of the semiconductor substrate.

16. The method of claim 12, wherein the substrate comprises a semiconductor substrate, and The first surface is formed by an interlayer dielectric film placed on a semiconductor substrate.

17. The method of claim 12, wherein the substrate comprises a semiconductor substrate. The first surface is formed by an interlayer dielectric film placed on a semiconductor substrate. The interlayer dielectric film includes trenches placed in the central portion, and After the formation and before CMP is performed, a metal film is formed on the interlayer dielectric film to fill the trench with metal.

18. The method of claim 17, wherein, in addition to the trench, the interlayer dielectric film further includes a dummy trench disposed in the outer region of the central portion, and In the formation, a planarization film is also formed on the dummy trench in addition to the outer peripheral portion.

19. A processing method, comprising: A resist pattern is formed on the substrate; A protective film is formed on at least the outer peripheral portion of the substrate by placing a curable composition on a substrate, bringing an overcoat into contact with the curable composition, and curing the curable composition. as well as The substrate that has already formed the protective film is etched.

20. The method of claim 19, wherein the substrate comprises an interlayer dielectric film. The resist pattern includes openings for forming trenches in the interlayer dielectric film, and During etching, trenches are formed in the interlayer dielectric film.

21. The method of claim 20, wherein the resist pattern includes dummy openings, and When forming the protective film, a protective film is also formed on the dummy opening in addition to the outer periphery of the substrate.

22. A method for manufacturing a semiconductor device, comprising: The substrate is processed by the processing method according to any one of claims 1 to 21; as well as Semiconductor devices are obtained by further processing the substrate that has already undergone the aforementioned processing.

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