Manufacturing method for semiconductor devices

Abstract

The present invention provides a method for manufacturing a semiconductor device in which the occurrence of flow marks on the surface of a encapsulating material containing an LDS additive is suppressed. [Solution] The present invention provides a method for manufacturing a semiconductor device, comprising the steps of: mounting a lead frame 14 on a protective film 12; mounting a semiconductor element 16 on the lead frame 14; sealing the lead frame 14 and the semiconductor element 16 with a first sealing material 18 containing an LDS (LASER DIRECT STRUCTURING) additive; peeling the protective film 12 from the lead frame 14; forming through holes 20 in the thickness direction of the first sealing material 18, through holes 20 in which the surface of the semiconductor element 16 is exposed to the bottom surface, through holes 20 in which the surface of the lead frame 14 is exposed to the bottom surface, and grooves 22 on the surface of the first sealing material 18 that connect these through holes 20 in a horizontal direction, and activating the inner wall surface of the through holes 20 and the surface of the grooves 22; selectively depositing metal in the through holes 20 and grooves 22 to form metal-plated wiring 24, and electrically connecting the semiconductor element 16 and the lead frame 14; and sealing the first sealing material 16 with the metal-plated wiring 24 with a second sealing material 26.

Claims

1. The process of mounting the lead frame onto the protective film, A step of mounting a semiconductor element on the lead frame, A step of sealing the lead frame and the semiconductor element with a first encapsulant containing an LDS (LASER DIRECT STRUCTURE) additive, A step of peeling the protective film from the lead frame, The process involves forming through holes in the thickness direction of the first encapsulant through holes in which the surface of the semiconductor element is exposed to the bottom surface, through holes in which the surface of the lead frame is exposed to the bottom surface, and grooves on the surface of the first encapsulant that connect these through holes horizontally, and activating the inner wall surfaces of the through holes and the surfaces of the grooves. A step of selectively depositing metal in the through-hole and groove to form a metal-plated wiring, and electrically connecting the semiconductor element and the lead frame, A step of sealing the first sealing material, which includes the metal-plated wiring, with a second sealing material, A method for manufacturing a semiconductor device, including the method described above.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the protective film is made of polyimide resin.

3. The first sealing material consists of a cured product of a thermosetting resin composition for LDS, The thermosetting resin composition for LDS is, An LDS additive consisting of a non-conductive metal compound that forms a metal nucleus upon irradiation with active energy rays, Thermosetting resin and A method for manufacturing a semiconductor device according to claim 1, comprising an inorganic filler.

4. The second sealing material consists of a cured product of a thermosetting resin composition. The thermosetting resin composition is Thermosetting resin and A method for manufacturing a semiconductor device according to claim 1, comprising an inorganic filler.

5. The second sealing material consists of a cured product of a thermosetting resin composition for LDS, The thermosetting resin composition for LDS is, An LDS additive consisting of a non-conductive metal compound that forms a metal nucleus upon irradiation with active energy rays, Thermosetting resin and A method for manufacturing a semiconductor device according to claim 1, comprising an inorganic filler.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the coefficient of linear expansion (CTE2) of the first encapsulant in the range above the glass transition temperature and below 320°C is 34 ppm / °C or less, and the bending strength at room temperature of 25°C is 158 MPa or less.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the glass transition temperature of the first sealing material is 140°C or lower.

8. A semiconductor encapsulation resin composition containing an LDS (LASER DIRECT STRUCTURE) additive, A semiconductor encapsulating resin composition having a coefficient of linear expansion (CTE2) of 34 ppm / °C or less in the range above the glass transition temperature and below 320°C, as measured under the following condition 1, and a flexural strength of 158 MPa or less at room temperature of 25°C. (Condition 1) Using a low-pressure transfer molding machine, the semiconductor encapsulating resin composition is injected and molded at a mold temperature of 175°C, an injection pressure of 6.9 MPa, and a curing time of 120 seconds to obtain a 10 mm × 4 mm × 4 mm test specimen. Next, the obtained test specimen is post-cured at 175°C for 4 hours, and then measured using a thermomechanical analyzer under conditions of a measurement temperature range of 0°C to 320°C and a heating rate of 5°C / min to calculate the coefficient of linear thermal expansion (CTE2). Using a low-pressure transfer molding machine, the semiconductor encapsulating resin composition is injected into a mold at a mold temperature of 130°C, an injection pressure of 9.8 MPa, and a curing time of 300 seconds to obtain a molded product with a width of 10 mm, a thickness of 4 mm, and a length of 80 mm. The obtained molded product is then post-cured at 175°C for 4 hours to obtain a test specimen. The bending strength (MPa) of the obtained test specimen at room temperature (25°C) is measured in accordance with JIS K 6911 at a head speed of 5 mm / min.

9. The semiconductor encapsulating resin composition according to claim 8, wherein the glass transition temperature of the cured product made from the semiconductor encapsulating resin composition, as measured under the following condition 2, is 140°C or less. (Condition 2) Using a low-pressure transfer molding machine, the semiconductor encapsulating resin composition is injected and molded at a mold temperature of 175°C, an injection pressure of 6.9 MPa, and a curing time of 120 seconds to obtain a 10 mm × 4 mm × 4 mm test specimen. Next, the obtained test specimen is post-cured at 175°C for 4 hours, and then the glass transition temperature is calculated by measuring it using a thermomechanical analyzer under conditions of a measurement temperature range of 0°C to 320°C and a heating rate of 5°C / min.

10. An LDS additive consisting of a non-conductive metal compound that forms a metal nucleus upon irradiation with active energy rays, Thermosetting resin and Inorganic fillers and A semiconductor encapsulation resin composition according to claim 8, comprising:

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