Ion implantation device and ion extraction device

Abstract

An ion implantation device is provided with: an ion source (20) that generates plasma containing target ions; a lead-out unit (22) that generates an ion beam (IB) by leading out an ion group including target ions from a first opening (OP1) in the ion source (20); and an implantation processing chamber that irradiates the wafer with an ion beam (IB). The extraction unit (22) is provided with: a reference electrode (22b), which is provided with a second opening (OP2) through which the ion beam (IB) passes, and to which a reference potential (Vgnd) is applied, from downstream toward upstream in the direction of travel of the ion beam (IB); a suppression electrode (22a) which is provided with a third opening (OP3) through which the ion beam (IB) passes, and to which a suppression potential (Vsup) lower than the reference potential (Vgnd) is applied; and a movable conductor (22e) which is provided with a fourth opening (OP4) through which the ion beam (IB) passes, and which has a variable distance from the first opening (OP1) in the traveling direction.

Description

Technical Field

[0001] This invention relates to ion implantation devices and ion extraction devices. Background Technology

[0002] In the semiconductor device manufacturing process, in order to change the conductivity of the semiconductor, change the crystal structure of the semiconductor, etc., an ion implantation process (also known as ion implantation process) is usually performed on the semiconductor wafer.

[0003] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2019-169407 Summary of the Invention

[0004] The problem that the invention aims to solve The ion beam irradiating the semiconductor wafer is extracted from the ion source that generates the plasma. Depending on how the ion clusters constituting the ion beam are extracted from the ion source, the interaction between the ion beam and the wafer changes, thus affecting the ion implantation process.

[0005] One exemplary object of this invention is to provide a technique capable of appropriately extracting ion clusters from an ion source.

[0006] Methods for solving problems To address the aforementioned issues, an ion implantation apparatus according to one aspect of the present invention comprises: an ion source for generating a plasma containing target ions; an extraction section for extracting an ion cluster containing target ions from a first opening in the ion source to generate an ion beam; and an implantation processing chamber for irradiating a wafer with the ion beam. The extraction section, extending from downstream to upstream of the ion beam's travel direction, comprises: a reference electrode having a second opening through which the ion beam passes and being applied a reference potential; a suppression electrode having a third opening through which the ion beam passes and being applied a suppression potential lower than the reference potential; and a movable conductor having a fourth opening through which the ion beam passes, and the distance between the conductor and the first opening in the travel direction is variable.

[0007] Another aspect of the present invention is an ion extraction device. This device comprises: an ion source that generates a plasma containing target ions; and an extraction section that extracts a swarm of ions containing the target ions from a first opening of the ion source to generate an ion beam. The extraction section, extending downstream to upstream of the ion beam's travel direction, comprises: a reference electrode having a second opening through which the ion beam passes and being applied a reference potential; a suppression electrode having a third opening through which the ion beam passes and being applied a suppression potential lower than the reference potential; and a movable conductor having a fourth opening through which the ion beam passes, and whose distance from the first opening in the travel direction is variable.

[0008] Furthermore, any combination of the above-mentioned constituent elements, or the constituent elements or expressions of the present invention, can be interchanged among methods, apparatuses, systems, etc., and are also valid as embodiments of the present invention.

[0009] Invention Effects According to a non-limiting exemplary embodiment of the present invention, a technique is provided that can appropriately extract ion clusters from an ion source. Attached Figure Description

[0010] Figure 1 This is a top view showing the schematic configuration of the ion implantation apparatus according to the embodiment.

[0011] Figure 2 This is a side view showing the schematic configuration of the ion implantation apparatus according to the embodiment.

[0012] Figure 3 This is a front view showing the general configuration of the first holding device and the second holding device.

[0013] Figure 4 (a) and (b) are top views schematically showing the orientation of the first processed object held by the first holding device in the horizontal direction.

[0014] Figure 5 (a) to (c) are side views schematically showing the orientation of the first processed object held by the first holding device in the vertical direction.

[0015] Figure 6 This is a front view illustrating an example of the operation of the first holding device and the second holding device.

[0016] Figure 7 This is a front view showing an example of the operation of the first holding device and the second holding device.

[0017] Figure 8 This is a front view illustrating an example of the operation of the first holding device and the second holding device.

[0018] Figure 9 This is a front view illustrating an example of the operation of the first holding device and the second holding device.

[0019] Figure 10 This is a flowchart illustrating the ion implantation method of the implementation method.

[0020] Figure 11 This is a flowchart illustrating the process of a modified ion implantation method.

[0021] Figure 12 This is a top view showing a schematic configuration of an ion implantation apparatus according to another embodiment.

[0022] Figure 13 This is a side view showing a schematic configuration of an ion implantation apparatus according to another embodiment.

[0023] Figure 14 This is a schematic front view showing the movable range of the beam analyzer.

[0024] Figure 15 This is a cross-sectional view showing the general configuration of the angle measuring device according to the first embodiment.

[0025] Figure 16 (a) is a plan view showing the approximate configuration of the incident surface with the incident opening. Figure 16 (b) is a plan view showing the approximate configuration of the ejection surface with the ejection opening.

[0026] Figure 17 This is a graph representing an example of the scanning voltage waveform of the scanning beam and the time waveform of the potential difference in the angle measuring device.

[0027] Figure 18 (a) is a graph representing an example of the time waveform of the beam current detected in the angle measuring device. Figure 18 (b) indicates the use of Figure 18 A graph of an example of the angular distribution of the scanning beam calculated from the time waveform of the beam current in (a).

[0028] Figure 19 This is a plan view showing the approximate configuration of the incident surface of the angle measuring device in the second embodiment.

[0029] Figure 20 This is a plan view showing the approximate configuration of the ejection surface of the angle measuring device according to the second embodiment.

[0030] Figure 21 This is a cross-sectional view showing the schematic configuration of the electrode assembly in the second embodiment.

[0031] Figure 22 This is a plan view showing the general configuration of the current measuring device according to the second embodiment.

[0032] Figure 23 This is a cross-sectional view showing the general configuration of the electrode assembly in a modified example.

[0033] Figure 24 This is a plan view showing the approximate configuration of the incident surface of the angle measuring device in the third embodiment.

[0034] Figure 25 This is a plan view showing the approximate configuration of the ejection surface of the angle measuring device according to the third embodiment.

[0035] Figure 26This is a cross-sectional view showing the schematic configuration of the electrode assembly in the third embodiment.

[0036] Figure 27 This is a plan view showing the general configuration of the current measuring device according to the third embodiment.

[0037] Figure 28 This is a cross-sectional view showing the general configuration of the electrode assembly in a modified example.

[0038] Figure 29 This refers to the ion extraction device of the first embodiment.

[0039] Figure 30 This refers to the ion extraction device of the first embodiment.

[0040] Figure 31 This refers to the ion extraction device of the first embodiment.

[0041] Figure 32 This refers to the ion extraction device of the first embodiment.

[0042] Figure 33 This refers to the ion extraction device of the first embodiment.

[0043] Figure 34 This refers to the ion extraction device of the first embodiment.

[0044] Figure 35 This refers to the ion extraction device of the first embodiment.

[0045] Figure 36 This refers to the ion extraction device of the second embodiment.

[0046] Figure 37 This refers to the ion extraction device of the second embodiment.

[0047] Figure 38 This refers to the ion extraction device of the second embodiment.

[0048] Figure 39 This refers to the ion extraction device of the second embodiment.

[0049] Figure 40 This refers to the ion extraction device of the second embodiment.

[0050] Figure 41 This refers to the ion extraction device of the second embodiment.

[0051] Figure 42 This refers to the ion extraction device of the third embodiment.

[0052] Figure 43 This refers to the ion extraction device of the third embodiment.

[0053] Figure 44 This refers to the ion extraction device of the third embodiment.

[0054] Figure 45 This refers to the ion extraction device of the third embodiment.

[0055] Figure 46 This refers to the ion extraction device of the third embodiment.

[0056] Figure 47 This refers to the ion extraction device of the third embodiment. Detailed Implementation

[0057] Hereinafter, with reference to the accompanying drawings, the configuration of the ion implantation apparatus and ion implantation method for implementing the present invention will be described in detail. Furthermore, in the description of the drawings, the same elements are labeled with the same reference numerals, and repeated descriptions are omitted where appropriate. Moreover, the configurations described below are illustrative and do not limit the scope of the present invention in any way.

[0058] Figure 1 This is a top view showing the schematic configuration of the ion implantation apparatus 10 according to the embodiment. Figure 2 This is a side view showing a schematic configuration of the ion implantation apparatus 10 according to the embodiment. The ion implantation apparatus 10 is configured to perform ion implantation treatment on the surfaces of the workpieces W1 and W2. The workpieces W1 and W2 are, for example, substrates and, for example, semiconductor wafers. For ease of explanation, the workpiece is sometimes referred to as a "substrate" or a "wafer" in this specification, but this is not intended to limit the object of the implantation treatment to a specific object. The workpiece may also be a large substrate (e.g., a glass substrate or a resin substrate) used in the manufacture of a flat panel display (FPD).

[0059] The ion implantation apparatus 10 is configured to scan an ion beam back and forth in a predetermined scanning direction, and to move the workpieces W1 and W2 back and forth in a direction intersecting the scanning direction, thereby irradiating the entire treated surface of the workpieces W1 and W2 with a point-like ion beam. The ion implantation apparatus 10 includes a beam generation device 12, an implantation processing chamber 14, a transport device 16, and a control device 18.

[0060] The beam generating apparatus 12 is configured to generate an ion beam and deliver it to the implantation processing chamber 14. The implantation processing chamber 14 houses the workpieces W1 and W2, which are the objects to be implanted. Inside the implantation processing chamber 14, the ion beam provided by the beam generating apparatus 12 irradiates the workpieces W1 and W2. The transport device 16 is configured to move the workpieces W1 and W2 into the implantation processing chamber 14 before implantation processing and to remove the workpieces W1 and W2 from the implantation processing chamber 14 after implantation processing. The control device 18 is configured to control all operations of the various devices constituting the ion implantation apparatus 10. The ion implantation apparatus 10 includes the beam generating apparatus 12, the implantation processing chamber 14, and a vacuum exhaust system (not shown) for providing the desired vacuum environment to the transport device 16.

[0061] The beam generation apparatus 12, starting from the upstream side of beamline A, sequentially comprises an ion source 20, an extraction section 22, a mass spectrometry analysis section 24, a beam shaping section 26, a beam scanning section 28, a beam parallelization section 30, an acceleration / deceleration section 32, and an energy analysis section 34. Here, beamline A is used for ease of explanation, and its meaning is the same as the ideal beam trajectory designed when the beam scanning section 28 is not scanning the ion beam. Furthermore, upstream of beamline A refers to the side closer to the ion source 20, and downstream of beamline A refers to the side closer to the injection processing chamber 14 (or beam blocker 38).

[0062] The beam generating device 12 is configured such that the beamline A bends along its path. The direction of travel of the beamline A changes at the mass spectrometer 24 and the energy analyzer 34. The beamline A is configured to extend in a horizontal plane orthogonal to the vertical direction. In this book, for ease of explanation, the direction of travel of the ion beam along the beamline A is defined as the z-direction, the vertical direction as the y-direction, and the direction orthogonal to both the y-direction and the z-direction as the x-direction. In particular, the direction of travel of the beamline A from the ion source 20 to the mass spectrometer 24 is defined as the z1-direction, and the direction orthogonal to both the y-direction and the z1-direction is defined as the x1-direction. Furthermore, the direction of travel of the beamline A from the mass spectrometer 24 to the energy analyzer 34 is defined as the z2-direction, and the direction orthogonal to both the y-direction and the z2-direction is defined as the x2-direction. Moreover, the direction of travel of the beamline A downstream of the energy analyzer 34 is defined as the z3-direction, and the direction orthogonal to both the y-direction and the z3-direction is defined as the x3-direction.

[0063] Ion source 20 is configured to generate ions constituting an ion beam. Ion source 20 includes an arc chamber 20a. Arc chamber 20a has an internal space 20b for generating plasma. Arc chamber 20a has a generally cubic box shape that divides the internal space 20b. Arc chamber 20a has a front slit 20c for extracting ions from the plasma generated in the internal space 20b. Front slit 20c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). That is, the opening width of front slit 20c in the horizontal direction is greater than the opening width of front slit 20c in the vertical direction.

[0064] The ion source 20 includes a source magnet device 20d. The source magnet device 20d is configured to apply a horizontal (x1 direction) magnetic field B1 to the internal space 20b of the arc chamber 20a. The source magnet device 20d improves the plasma generation efficiency generated in the internal space 20b of the arc chamber 20a by applying the magnetic field B1. The direction of the magnetic field B1 applied by the source magnet device 20d corresponds to the length direction of the front slit 20c.

[0065] An extraction section 22 is located downstream of the ion source 20. The extraction section 22 extracts ions from the ion source 20 to generate an ion beam. The extraction section 22 is configured to extract ions from plasma generated in the internal space 20b of the arc chamber 20a. The extraction section 22 includes a first extraction electrode 22a and a second extraction electrode 22b. The first extraction electrode 22a is located downstream of the arc chamber 20a, and the second extraction electrode 22b is located downstream of the first extraction electrode 22a. A negative suppression voltage is applied to the first extraction electrode 22a. A ground voltage is applied to the second extraction electrode 22b. Additionally, a positive extraction voltage is applied to the arc chamber 20a.

[0066] The first lead-out electrode 22a has a first lead-out opening 22c for the passage of an ion beam. Similar to the front slit 20c, the first lead-out opening 22c has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the horizontal opening width of the first lead-out opening 22c is greater than its vertical opening width. The second lead-out electrode 22b has a second lead-out opening 22d for the passage of an ion beam. Similar to the front slit 20c, the second lead-out opening 22d has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the horizontal opening width of the second lead-out opening 22d is greater than its vertical opening width.

[0067] The ion beam extracted by the extraction section 22 can be a ribbon-shaped beam that diffuses in the horizontal direction (x1 direction). By increasing the horizontal opening width of the front slit 20c, the first extraction opening 22c, and the second extraction opening 22d, the horizontal dimension of the ribbon-shaped beam can be increased. As a result, the beam current of the ion beam extracted from the ion source 20 can be easily increased.

[0068] The mass spectrometry analysis unit 24 is located downstream of the extraction unit 22. The mass spectrometry analysis unit 24 is configured to select necessary ions from the ion beam extracted by the extraction unit 22 through mass spectrometry analysis. The mass spectrometry analysis unit 24 includes a mass spectrometry analysis magnet device 24a, a mass spectrometry analysis slit 24b, and an injector Faraday cup 24c.

[0069] The mass spectrometer magnet device 24a applies a magnetic field B2 to the ion beam, deflecting it along different paths based on the mass-to-charge ratio M = m / q (where m is mass and q is charge). The mass spectrometer magnet device 24a applies a magnetic field B2 in the vertical direction (-y direction), deflecting the ion beam in the horizontal direction (x1 direction). The strength of the magnetic field B2 applied by the mass spectrometer magnet device 24a is adjusted so that ions with the desired mass-to-charge ratio M pass through the mass spectrometer slit 24b. The ion beam passing through the mass spectrometer slit 24b is, for example, deflected by 90 degrees when passing through the mass spectrometer magnet device 24a.

[0070] The mass spectrometry slit 24b is located downstream of the mass spectrometry magnet device 24a. The mass spectrometry slit 24b has a slit shape with a short opening width in the horizontal direction (x2 direction) and a long opening width in the vertical direction (y direction). That is, the opening width of the mass spectrometry slit 24b in the vertical direction is greater than the opening width of the mass spectrometry slit 24b in the horizontal direction.

[0071] The mass spectrometry slit 24b can also be configured to have a variable opening width (i.e., slit width) in the horizontal direction (x2 direction) to adjust the mass resolution. The mass spectrometry slit 24b can also be configured to consist of two beam shields movable in the slit width direction, and the slit width can be adjusted by changing the interval between the two beam shields. The mass spectrometry slit 24b can also be configured to have a variable slit width by switching to any of a plurality of slits with different slit widths.

[0072] An injector Faraday cup 24c is positioned downstream of the mass spectrometry analysis slit 24b. The injector Faraday cup 24c measures the beam current of the mass-spectrated ion beam passing through the mass spectrometry analysis slit 24b. By measuring the beam current while changing the magnetic field strength of the mass spectrometry analysis magnet device 24a, the injector Faraday cup 24c can measure the mass spectrometry analysis spectrum of the ion beam. The measured mass spectrometry analysis spectrum can be used to calculate the mass resolution of the mass spectrometry analysis unit 24.

[0073] The injector Faraday cup 24c is configured to move in and out of the incident beam A via the operation of the injector drive unit 24d. The injector drive unit 24d moves the injector Faraday cup 24c in a direction orthogonal to the z2 direction extending from the beam A (e.g., the x2 direction). Figure 1 As shown by the dashed line, the Faraday cup 24c of the injector, when positioned on beamline A, cuts off the ion beam toward the downstream side. On the other hand, as... Figure 1 As shown by the solid line, the Faraday cup 24c of the injector releases the ion beam from the downstream side after it has retreated from the beam line A.

[0074] A magnetic shield 23 can be provided between the extraction section 22 and the mass spectrometry analysis section 24. The magnetic shield 23 is configured to suppress magnetic field interference between the magnetic field B1 applied to the ion source 20 and the magnetic field B2 applied to the mass spectrometry analysis section 24. The magnetic shield 23 is made of a magnetic material such as an electromagnet. The magnetic shield 23 has a passage opening 23a for the ion beam to pass through from the extraction section 22 toward the mass spectrometry analysis section 24. Similar to the front slit 20c, the passage opening 23a may also have a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width in the horizontal direction of the passage opening 23a may be greater than the opening width in the vertical direction of the passage opening 23a.

[0075] A beamforming section 26 is disposed downstream of the mass spectrometry analysis section 24. The beamforming section 26 is configured to shape the ion beam after passing through the mass spectrometry analysis section 24 into a desired profile shape and convergence / divergence angle. The beamforming section 26 includes a lens device for adjusting at least one of the profile shape and convergence / divergence angle of the ion beam. For example, the beamforming section 26 is configured to converge a horizontally diffused band-shaped ion beam into a point-shaped ion beam.

[0076] The beamforming unit 26 includes multiple lens devices, such as three lens devices 26a, 26b, and 26c. These three lens devices 26a to 26c are configured, for example, as electric field-type three-segment quadrupole lenses (also called tripolar Q lenses). By combining multiple lens devices, the beamforming unit 26 can independently adjust the convergence or divergence of the ion beam in both the horizontal (x2 direction) and vertical (y direction). The beamforming unit 26 may also include magnetic field-type lens devices. Furthermore, the beamforming unit 26 may also include lens devices that shape the ion beam using both electric and magnetic fields.

[0077] A beam scanning unit 28 is disposed downstream of a beam forming unit 26. The beam scanning unit 28 is configured to generate a scanning beam SB by scanning the ion beam back and forth in a predetermined scanning direction. The beam scanning unit 28 can also be described as a beam deflection device that deflects the ion beam formed by the beam forming unit 26 in a predetermined scanning direction. The beam scanning unit 28 is configured such that the scanning direction is different from the horizontal direction, for example, it is configured such that the scanning direction is the vertical direction (y-direction).

[0078] The beam scanning unit 28 includes a pair of scanning electrodes 28a and 28b facing each other in the vertical direction (y-direction). The scanning electrode pairs 28a and 28b are connected to a variable voltage power supply (not shown). By periodically changing the voltage applied between the scanning electrode pairs 28a and 28b, the electric field generated between them is changed, causing the ion beam to deflect at various angles. As a result, the ion beam can be scanned across the entire scanning range in the vertical direction (y-direction). Figure 2 In the diagram, the scanning direction and range of the ion beam are illustrated by arrow Y, and multiple trajectories of the ion beam within the scanning range are shown by dashed lines. Furthermore, the beam scanning unit 28 can be a magnetic field type instead of an electric field type. The beam scanning unit 28 may include a magnet device for deflecting the ion beam.

[0079] A beam parallelization section 30 is located downstream of the beam scanning section 28. The beam parallelization section 30 is configured such that the travel direction of the ion beam scanned back and forth by the beam scanning section 28 is parallel to the direction of beam line A. The beam parallelization section 30 has multiple parallelization lens electrodes 30a, 30b in an arc shape with the ion beam passing through a slit at its center in the horizontal direction (x2 direction). The parallelization lens electrodes 30a, 30b are connected to a high-voltage power supply (not shown), so that an electric field generated by applying voltage acts on the ion beam to make the ion beam's travel direction parallel. Alternatively, the beam parallelization section 30 can be a magnetic field type instead of an electric field type. The beam parallelization section 30 may include a magnet device for deflecting the ion beam.

[0080] An acceleration / deceleration unit 32 is disposed downstream of the beam parallelization unit 30. The acceleration / deceleration unit 32 is configured to accelerate or decelerate the scanning beam parallelized by the beam parallelization unit 30. The acceleration / deceleration unit 32 is an electrostatic acceleration / deceleration device, which accelerates or decelerates the ion beam by utilizing the potential difference between a first potential applied to the upstream side of the acceleration / deceleration unit 32 and a second potential applied to the downstream side of the acceleration / deceleration unit 32.

[0081] An energy analysis unit 34 is located downstream of the acceleration / deceleration unit 32. The energy analysis unit 34 is configured to analyze the energy of the ion beam and guide ions with the desired energy into the implantation processing chamber 14. The energy analysis unit 34 selects an angle energy filter (AEF) with the desired energy based on the deflection angle θ to deflect the ion beam horizontally. The deflection angle θ is, for example, 10 degrees or more and 20 degrees or less, approximately 15 degrees. The energy analysis unit 34 includes AEF electrode pairs 34a and 34b and an energy analysis slit 34c.

[0082] AEF electrode pairs 34a and 34b are configured to face each other in a direction orthogonal to the scanning direction. AEF electrode pairs 34a and 34b are also configured to face each other in a horizontal direction (x2 or x3). AEF electrode pairs 34a and 34b are connected to a high-voltage power supply (not shown) to apply an electric field to the ion beam, thereby deflecting it. AEF electrode pairs 34a and 34b are deflection devices that deflect the scanning beam in the horizontal direction. An energy analysis slit 34c is located downstream of AEF electrode pairs 34a and 34b.

[0083] The energy analysis slit 34c has a slit shape with a long opening width in the vertical direction (y-direction) and a short opening width in the horizontal direction (x3-direction). That is, the opening width of the energy analysis slit 34c in the vertical direction is greater than the opening width in the horizontal direction. The energy analysis slit 34c allows the ion beam of the desired energy value or energy range to pass through to the treated objects W1 and W2, while blocking other ion beams.

[0084] The energy analysis unit 34 can also be a magnetic field type instead of an electric field type. The energy analysis unit 34 can be equipped with a magnet device for magnetic field deflection. The energy analysis unit 34 can also utilize both electric and magnetic fields, and can also be equipped with an AEF electrode pair for electric field deflection and a magnet device for magnetic field deflection.

[0085] Thus, the beam generating device 12 supplies an ion beam to the injection processing chamber 14 to irradiate the objects W1 and W2 to be processed. The beam generating device 12 can also be referred to as a beamline device. The beam generating device 12 is configured to generate an ion beam to achieve the desired injection conditions by adjusting the operating parameters of the various machines constituting the beam generating device 12.

[0086] The injection processing chamber 14 is equipped with a plasma shower device 36, a beam blocker 38, a first holding device 40, and a second holding device 42.

[0087] The plasma shower device 36 is located downstream of the energy analysis unit 34. The plasma shower device 36 supplies low-energy electrons to the ion beam and the surfaces (treated surfaces) of the objects W1 and W2 according to the beam current of the ion beam, suppressing charging caused by the accumulation of positive charges on the treated surfaces due to ion implantation. The plasma shower device 36 includes, for example, a cluster tube 36a through which the ion beam passes and a plasma generating unit 36b that supplies electrons into the cluster tube 36a. The cluster tube 36a has a shape with a long opening width in the vertical direction (y-direction) and a short opening width in the horizontal direction (x3-direction).

[0088] A beam blocker 38 is located at the downstream end of the beamline A, for example, mounted on the side wall of the injection processing chamber 14. When there are no objects W1 or W2 to be processed on the beamline A, the ion beam is incident on the beam blocker 38. A plurality of tuning cups 38a, 38b, 38c, and 38d are provided on the beam blocker 38. The tuning cups 38a to 38d are Faraday cups configured to measure the beam current of the ion beam incident on the beam blocker 38. The tuning cups 38a to 38d are arranged at intervals, for example, in the vertical direction (y-direction).

[0089] The first holding device 40 is configured to hold the first processed object W1, which is the object to be injected. The first holding device 40 is configured to move the first processed object W1 held by the first holding device 40 back and forth in a direction spanning the scanning beam. The first holding device 40 is configured to move the first processed object W1 back and forth in a horizontal direction (x3 direction). The first holding device 40 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0090] The first holding device 40 includes a first suction cup mechanism 50, a first torsion mechanism 52, a first vertical angle adjustment mechanism 54, a first horizontal angle adjustment mechanism 56, and a first reciprocating motion mechanism 58.

[0091] The first suction cup mechanism 50 is configured to hold the first workpiece W1 by contacting its back side. The first suction cup mechanism 50 may include, for example, an electrostatic suction cup for holding the first workpiece W1. The first suction cup mechanism 50 may also include a temperature adjustment mechanism for cooling or heating the first workpiece W1. The first suction cup mechanism 50 includes a first lifting mechanism for lifting the first workpiece W1 to move it away from the first suction cup mechanism 50.

[0092] The first torsion mechanism 52 rotatably supports the first suction cup mechanism 50. The first torsion mechanism 52 causes the first suction cup mechanism 50 to rotate about a rotation axis (also called a torsion axis) extending along the normal direction of the processed surface of the first processed object W1 held by the first suction cup mechanism 50, so as to adjust the torsion angle of the first processed object W1. a1. The first torsion mechanism 52, for example, adjusts the torsion angle between the alignment mark provided on the outer periphery of the first workpiece W1 and the reference position. a1. Here, the alignment mark of the first processed object W1 refers, for example, to a notch or orientation flat provided on the outer periphery of the wafer, and to a mark that serves as a reference for the angular position of the wafer in the crystal axis direction or circumferential direction.

[0093] The first vertical angle adjustment mechanism 54 rotatably supports the first torsion mechanism 52. The first vertical angle adjustment mechanism 54 causes the first torsion mechanism 52 to rotate about a rotation axis extending in the horizontal direction (also called a handling tilt axis) to adjust the orientation of the first processed object W1 in the vertical direction. The orientation of the first processed object W1 in the vertical direction can be determined by the vertical rotation angle about the horizontal rotation axis. Defined by b1.

[0094] The first horizontal angle adjustment mechanism 56 rotatably supports the first vertical angle adjustment mechanism 54. The first horizontal angle adjustment mechanism 56 causes the first vertical angle adjustment mechanism 54 to rotate about a rotation axis extending in the vertical direction (also called the injection tilt axis) to adjust the orientation of the first processed object W1 in the horizontal direction. The orientation of the first processed object W1 in the horizontal direction is determined by the horizontal rotation angle about the vertical rotation axis. Let c1 be used for definition.

[0095] The first reciprocating motion mechanism 58 is configured to move the first horizontal angle adjustment mechanism 56 in the horizontal direction (x3 direction). The first reciprocating motion mechanism 58 moves the first horizontal angle adjustment mechanism 56 along the guide rail 44. The first reciprocating motion mechanism 58 includes, for example, a first ball screw 58a extending in the horizontal direction (x3 direction) along the guide rail 44. The first reciprocating motion mechanism 58 causes the first horizontal angle adjustment mechanism 56 to move linearly in the horizontal direction by rotating the first ball screw 58a.

[0096] The second holding device 42 is configured to hold the second object to be processed, W2, which is the target of the injection process. The second holding device 42 is configured to move the second object to be processed, W2, held by the second holding device 42, back and forth in a direction spanning the scanning beam. The second holding device 42 is configured to move the second object to be processed, W2, back and forth in a horizontal direction (x3 direction). The second holding device 42 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0097] The second holding device 42 can be configured in the same way as the first holding device 40. The second holding device 42 is capable of moving in the same direction as the first holding device 40. The second holding device 42 is capable of moving along the same guide rail 44 as the first holding device 40. Alternatively, the second holding device 42 can be configured to move along a different guide rail than the first holding device 40. That is, the injection processing chamber 14 can be provided with a first guide rail for the movement of the first holding device 40 and a second guide rail for the movement of the second holding device 42. The second holding device 42 can move simultaneously with the first holding device 40. The second holding device 42 can also move independently of the first holding device 40.

[0098] The second holding device 42 includes a second suction cup mechanism 60, a second torsion mechanism 62, a second vertical angle adjustment mechanism 64, a second horizontal angle adjustment mechanism 66, and a second reciprocating motion mechanism 68.

[0099] The second suction cup mechanism 60 is configured to hold the second workpiece W2 by contacting its back side. The second suction cup mechanism 60 may include, for example, an electrostatic suction cup for holding the second workpiece W2. The second suction cup mechanism 60 may also include a temperature adjustment mechanism for cooling or heating the second workpiece W2. The second suction cup mechanism 60 includes a second lifting mechanism for lifting the second workpiece W2 to move it away from the second suction cup mechanism 60.

[0100] The second torsion mechanism 62 rotatably supports the second suction cup mechanism 60. The second torsion mechanism 62 causes the second suction cup mechanism 60 to rotate about a rotation axis (also called a torsion axis) extending along the normal direction of the processed surface of the second processed object W2 held by the second suction cup mechanism 60, so as to adjust the torsion angle of the second processed object W2. a2. The second torsion mechanism 62, for example, adjusts the torsion angle between the alignment mark provided on the outer periphery of the second workpiece W2 and the reference position. a2.

[0101] The second vertical angle adjustment mechanism 64 rotatably supports the second torsion mechanism 62. The second vertical angle adjustment mechanism 64 causes the second torsion mechanism 62 to rotate about a rotation axis extending in the horizontal direction (also called a handling tilt axis) to adjust the orientation of the second processed object W2 in the vertical direction. The orientation of the second processed object W2 in the vertical direction can be determined by the vertical rotation angle about the horizontal rotation axis. Defined by b2.

[0102] The second horizontal angle adjustment mechanism 66 rotatably supports the second vertical angle adjustment mechanism 64. The second horizontal angle adjustment mechanism 66 causes the second vertical angle adjustment mechanism 64 to rotate about a rotation axis extending in the vertical direction (also called the injection tilt axis) to adjust the orientation of the second processed object W2 in the horizontal direction. The orientation of the second processed object W2 in the horizontal direction is determined by the horizontal rotation angle about the vertical rotation axis. Defined by c2.

[0103] The second reciprocating motion mechanism 68 is configured to move the second horizontal angle adjustment mechanism 66 in the horizontal direction (x3 direction). The second reciprocating motion mechanism 68 moves the second horizontal angle adjustment mechanism 66 along the guide rail 44. The second reciprocating motion mechanism 68 includes, for example, a second ball screw 68a extending in the horizontal direction (x3 direction) along the guide rail 44, and the second horizontal angle adjustment mechanism 66 is moved linearly in the horizontal direction by rotating the second ball screw 68a.

[0104] The conveying device 16 includes a first conveying device 70 and a second conveying device 72. The first conveying device 70 and the second conveying device 72 are arranged horizontally (x3 direction) away from the beam line A. Figure 1 In the example, the first transport device 70 is configured away from the beam line A in the -x3 direction, and the second transport device 72 is configured away from the beam line A in the +x3 direction. The first transport device 70 and the second transport device 72 are configured, for example, such that a beam blocker 38 is located between the first transport device 70 and the second transport device 72.

[0105] The first transport device 70 is configured to transport the first processed object W1 before injection processing into the injection processing chamber 14, and to remove the first processed object W1 after injection processing from the injection processing chamber 14. The first transport device 70 transports the first processed object W1 into the first holding device 40, and removes the first processed object W1 from the first holding device 40. The first transport device 70 may include, for example, a first transport robot (not shown) for transporting the first processed object W1. The first transport device 70 transports the first processed object W1 through a first transport port 74 provided on the side wall of the injection processing chamber 14.

[0106] The second transport device 72 is configured to transport the second processed object W2 before injection processing into the injection processing chamber 14, and to remove the second processed object W2 after injection processing from the injection processing chamber 14. The second transport device 72 transports the second processed object W2 into the second holding device 42, and removes the second processed object W2 from the second holding device 42. The second transport device 72 may include, for example, a second transport robot (not shown) for transporting the second processed object W2. The second transport device 72 transports the second processed object W2 through a second transport port 76 provided on the side wall of the injection processing chamber 14.

[0107] The control device 18 controls all operations of the ion implantation device 10. The control device 18 is implemented in hardware by components or mechanical devices, such as a computer's CPU or memory, and in software by computer programs. The various functions provided by the control device 18 can be achieved through the cooperation of hardware and software.

[0108] The control device 18 includes a processor 18a such as a CPU (Central Processing Unit) and a memory 18b such as ROM (Read Only Memory) or RAM (Random Access Memory). For example, the control device 18 executes a program stored in the memory 18b via the processor 18a, controlling all operations of the ion implantation device 10 according to the program. The processor 18a can also execute programs stored in any memory device different from the memory 18b, programs obtained from any recording medium via a reading device, or programs obtained via a network. The memory 18b storing the program can be a volatile memory such as DRAM (Dynamic Random Access Memory), or a non-volatile memory such as EEPROM (Electrically Erasable Programmable Read-Only Memory), flash memory, magnetoresistive memory, resistive transducer memory, or ferroelectric material memory. Magnetic recording media such as non-volatile memory, magnetic tape and magnetic disk, and optical recording media such as optical disk are examples of non-transitory and tangible computer-readable storage media.

[0109] The various functions provided by the control device 18 can be implemented by a single device having a processor 18a and a memory 18b, or by the cooperation of multiple devices each having a processor 18a and a memory 18b.

[0110] Figure 3 This is a front view showing the schematic configuration of the first holding device 40 and the second holding device 42, indicating the configuration when viewed along the beam travel direction (z3 direction) in the injection processing chamber 14. Figure 3In this configuration, a first holding device 40 is disposed at a first transport position 80, and a second holding device 42 is disposed at a second transport position 82. The first transport position 80 is used to transport the first processed object W1 into or out of the first holding device 40 via the first transport port 74. The first transport position 80 corresponds to the position of the first transport port 74. The second transport position 82 is used to transport the second processed object W2 into or out of the second holding device 42 via the second transport port 76. The second transport position 82 corresponds to the position of the second transport port 76. The first transport position 80 and the second transport position 82 are horizontally (x3 direction) away from the injection position 84 used for irradiating the processed objects W1 and W2 with an ion beam.

[0111] The injection position 84 is located at the center of the injection processing chamber 14 in the horizontal direction (x3 direction). The injection position 84 is located between the first transport position 80 and the second transport position 82. The injection position 84 includes a central injection position 84C, a left injection position 84L, and a right injection position 84R. Figure 3 In the diagram, two-point chain lines are used to indicate the processed materials WC, WL, and WR located at the injection center position 84C, the injection left end position 84L, and the injection right end position 84R, respectively. The injection center position 84C corresponds to the position irradiated by the scanning beam SB generated by the beam generating device 12. The injection left end position 84L is located to the left of the injection center position 84C (…). Figure 3 The position offset (in the +x3 direction) is set so that the entire treated surface of the workpiece WL, positioned at the left injection position 84L, does not overlap with the scanning beam SB. The right injection position 84R is located from the injection center position 84C to the right ( Figure 3 The position of the deviation in the -x3 direction is set so that the entire surface of the object to be processed WR at the injection right end position 84R does not overlap with the scanning beam SB.

[0112] The size h of the irradiation range in the vertical direction (y direction) of the scanning beam SB. B The dimension h in the vertical direction (y-direction) of the surface to be processed of the objects W1 and W2 is larger than that of the objects being processed. W The dimension h in the vertical direction of the scanning beam SB B For example, the dimension h in the vertical direction of the surface to be processed of the objects W1 and W2. W It is more than 1.1 times and less than 3 times, preferably more than 1.2 times and less than 2 times.

[0113] The first holding device 40 irradiates the entire surface of the first workpiece W1 by reciprocating in the horizontal direction (x3 direction) at the injection position 84. The first holding device 40 irradiates the entire surface of the first workpiece W1 by reciprocating within a range C from the left injection position 84L to the right injection position 84R. The first holding device 40 can move the first workpiece W1 in or out by moving to the first transport position 80. The first holding device 40 can move between the injection position 84 and the first transport position 80. The first holding device 40 can move within a first movable range E1 from the first transport position 80 to the left injection position 84L. The first holding device 40 cannot move to the second transport position 82.

[0114] The second holding device 42, by reciprocating in the horizontal direction (x3 direction) at the injection position 84, irradiates the entire surface of the second workpiece W2 with the scanning beam SB. The second holding device 42, by reciprocating within a movement range C from the left injection position 84L to the right injection position 84R, irradiates the entire surface of the second workpiece W2 with the scanning beam SB. The second holding device 42 can move in or out of the second workpiece W2 by moving to the second transport position 82. The second holding device 42 is movable between the injection position 84 and the second transport position 82. The second holding device 42 is movable within a second movable range E2 from the second transport position 82 to the right injection position 84R. The second holding device 42 cannot move to the first transport position 80.

[0115] The first injection position for irradiating the first subject W1 held by the first holding device 40 with the ion beam is the same as the second injection position for irradiating the second subject W2 held by the second holding device 42 with the ion beam. That is, the first injection position and the second injection position coincide with a common injection position 84. Furthermore, the first movement range of the first holding device 40 for reciprocating movement of the first subject W1 at the first injection position is the same as the second movement range of the second holding device 42 for reciprocating movement of the second subject W2 at the second injection position. That is, the first movement range and the second movement range coincide with a common movement range C. When viewed along the beam travel direction, the first movement range and the second movement range overlap. The vertical position of the first subject W1 held by the first holding device 40 at the first injection position is the same as the vertical position of the second subject W2 held by the second holding device 42 at the second injection position. The position of the first processed object W1, held by the first holding device 40 at the first injection position, in the beam travel direction is the same as the position of the second processed object W2, held by the second holding device 42 at the second injection position, in the beam travel direction. Therefore, the first holding device 40 and the second holding device 42 are configured to allow the first processed object W1 and the second processed object W2 to reciprocate in the same way relative to the scanning beam SB. Thus, the first processed object W1 and the second processed object W2 are irradiated by the scanning beam SB under the same injection environment.

[0116] Figure 4 (a) and (b) are top views schematically showing the orientation of the first processed object W1 held by the first holding device 40 in the horizontal direction. Figure 4 of (a), Figure 4 (b) indicates the change in the horizontal direction of the first processed object W1 caused by the first horizontal angle adjustment mechanism 56. The same applies to the horizontal direction of the second processed object W2 held by the second holding device 42.

[0117] Figure 4 (a) and (b) indicate the direction of the first processed object W1 in the injection process of irradiating the first processed object W1 with the scanning beam SB. Figure 4 (a) indicates the case where the surface of the first object W1 being processed is orthogonal to the direction of travel (z3 direction) of the scanning beam SB. Figure 4 (b) indicates the case where the surface of the first object W1 being processed intersects obliquely with the direction of travel (z3 direction) of the scanning beam SB. Figure 4In (b), the surface of the first object to be processed, W1, has a horizontal tilt angle α1 relative to the travel direction (z3 direction) of the scanning beam SB. The horizontal tilt angle α1 represents the degree of inclination of the incident direction of the scanning beam SB relative to the normal of the surface of the first object to be processed, W1, in the horizontal direction. The first holding device 40 adjusts the horizontal rotation angle by driving the first horizontal angle adjustment mechanism 56. c1 allows adjustment of the horizontal tilt angle α1 of the first processed object W1. The first holding device 40 is configured to adjust the horizontal tilt angle α1 within a range of ±30 degrees or ±60 degrees during ion implantation.

[0118] Figure 5 (a) to (c) are side views schematically showing the orientation of the first processed object W1 held by the first holding device 40 in the vertical direction. Figure 5 (a) to (c) indicate the change in the vertical direction of the first processed object W1 caused by the first vertical angle adjustment mechanism 54. The same applies to the vertical direction of the second processed object W2 held by the second holding device 42.

[0119] Figure 5 (a) represents an example of the direction in which the first workpiece W1 is irradiated by the scanning beam SB during the injection process. Figure 5 In (a), the first holding device 40 holds the first workpiece W1 such that the surface to be processed on the first workpiece W1 is orthogonal to the travel direction (z3 direction) of the scanning beam SB. That is, the first holding device 40 holds the first workpiece W1 in a direction in which the surface to be processed on the first workpiece W1 is not along the horizontal direction. Figure 5 In example (a), the first holding device 40 holds the first processed object W1 with the processed surface of the first processed object W1 in a vertical direction.

[0120] Figure 5 (b) represents another example in the direction of the first processed object W1 during the injection process of irradiating the first processed object W1 with the scanning beam SB. Figure 5 In (b), the first holding device 40 holds the first processed object W1 in a direction in which the processed surface of the first processed object W1 is inclined relative to the vertical direction. Figure 5 In (b), the first holding device 40 holds the first processed object W1 in a direction in which the processed surface of the first processed object W1 is not along the horizontal direction. Figure 5In (b), the surface of the first object to be processed, W1, has a vertical tilt angle β1 relative to the travel direction (z3 direction) of the scanning beam SB. The vertical tilt angle β1 represents the degree of inclination of the incident direction of the scanning beam SB relative to the normal to the surface of the first object to be processed, W1, in the vertical direction. The first holding device 40 adjusts the vertical rotation angle by driving the first vertical angle adjustment mechanism 54. b1, which allows adjustment of the vertical tilt angle β1. The first holding device 40 is configured to allow adjustment of the vertical tilt angle β1 within, for example, a range of ±30 degrees or ±60 degrees during ion implantation.

[0121] Figure 5 (c) indicates the orientation of the first processed object W1 in a transport process whereby it is moved into or out of the first holding device 40. Figure 5 In (c), the first holding device 40 holds the first processed object W1 with the processed surface of the first processed object W1 in a horizontal direction. Figure 5 In (c), the first holding device 40 uses the first lifting mechanism 50a to lift the first workpiece W1, so that the first workpiece W1 is away from the first suction cup mechanism 50. This allows the arm of the first handling robot, used to load or unload the first workpiece W1, to be inserted into the gap 50b between the first suction cup mechanism 50 and the first workpiece W1. Alternatively, the arm of the first handling robot does not necessarily have to be inserted into the gap 50b between the first suction cup mechanism 50 and the first workpiece W1. The arm of the first handling robot may also be configured to support the outer periphery of the first workpiece W1, rather than supporting the back side of the first workpiece W1. In this case, the gap 50b can be very small.

[0122] Figures 6-9 This is a front view illustrating an example of the operation of the first holding device 40 and the second holding device 42. Figure 6 This indicates the status of the first injection process performed on the first processed object W1. Figure 6 In this configuration, a first holding device 40 is positioned at the injection position 84, and a second holding device 42 is positioned at the second transport position 82. The first holding device 40 reciprocates horizontally at the injection position 84 as indicated by arrow X to perform injection processing on the first workpiece W1. The second holding device 42, at the second transport position 82, uses a second lifting mechanism 60a to lift the second workpiece W2, after injection processing, and removes it through a second transport port 76. The second holding device 42, at the second transport position 82, uses the second lifting mechanism 60a to receive the second workpiece W2, before injection processing, and loads it into the second transport port 76.

[0123] exist Figure 6In this configuration, the first holding device 40 holds the first workpiece W1 in a direction such that the scanning beam SB irradiates the surface of the first workpiece W1 to be processed. For example, as... Figure 4 As shown in (a), the first holding device 40 holds the first processed object W1 in a direction where the horizontal tilt angle α1 is 0. For example, as Figure 5 As shown in (a), the first holding device 40 holds the first processed object W1 in a direction where the vertical tilt angle β1 is 0. Figure 4 As shown in (b), the first holding device 40 can also hold the first processed object W1 in a direction in which the horizontal tilt angle α1 is not 0. Figure 5 As shown in (b), the first holding device 40 can also hold the first processed object W1 in a direction in which the vertical tilt angle β1 is not 0. The first holding device 40 can also hold the first processed object W1 in a direction in which neither the horizontal tilt angle α1 nor the vertical tilt angle β1 is 0.

[0124] exist Figure 6 In this configuration, the second holding device 42 holds the second processed object W2 in an orientation that allows it to be moved in or out through the second conveying port 76. Figure 5 (c) Similarly, the second holding device 42 holds the second processed object W2 with the processed surface of the second processed object W2 in a horizontal direction. The second holding device 42 uses the second lifting mechanism 60a to lift the second processed object W2, forming a gap 60b between the second suction cup mechanism 60 and the second processed object W2. The second transport device 72 removes the second processed object W2 after injection treatment by inserting the arm of the second transport robot into the gap 60b between the second suction cup mechanism 60 and the second processed object W2. When the second processed object W2 before injection treatment has been placed on the second lifting mechanism 60a using the arm of the second transport robot, the second holding device 42 releases the lifting of the second processed object W2 and holds the second processed object W2 on the second suction cup mechanism 60. After holding the second processed object W2 before injection treatment, the second holding device 42 drives the second vertical angle adjustment mechanism 64 to change the vertical rotation angle. b2, the second processed object W2 is held in a direction in which the processed surface of the second processed object W2 is not along the horizontal direction.

[0125] Figure 7 This indicates a switch from the first injection process for the first processed object W1 to the second injection process for the second processed object W2. In other words, it indicates the end of the first injection process for the first processed object W1 and the start of the second injection process for the second processed object W2. Figure 7In this process, the first holding device 40 moves from the injection position 84 toward the first transport position 80 as indicated by arrow F1, and the second holding device 42 moves from the second transport position 82 toward the injection position 84 as indicated by arrow F2. Figure 7 As shown, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required to switch from the first injection process to the second injection process can be shortened.

[0126] exist Figure 7 In this process, the first holding device 40 and the second holding device 42 can be moved in a manner that maintains the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, by making the moving speeds of the first holding device 40 and the second holding device 42 the same, the relative distance d can be kept constant. Alternatively, the moving speeds of the first holding device 40 and the second holding device 42 can be adjusted to maintain the relative distance d within a range from a predetermined upper limit to a lower limit. In this case, the moving speed of the first holding device 40 can be faster or slower than the moving speed of the second holding device 42. In the case of ion implantation that provides a uniform dose distribution to the workpiece in the horizontal direction, the relative distance d is preferably as small as possible. In the case of ion implantation that provides a non-uniform dose distribution to the workpiece in the horizontal direction, the relative distance d is preferably larger than the dimension in the horizontal direction (x3 direction) of the scanning beam SB.

[0127] exist Figure 7 In this process, the moving speed of the first holding device 40 holding the first workpiece W1, which is about to complete the injection process, can be the maximum speed that the first holding device 40 can adopt. By moving the first holding device 40 at its maximum speed, the time required from completing the first injection process for the first workpiece W1 to removing the first workpiece W1 can be shortened, thereby improving productivity. On the other hand, the moving speed of the second holding device 42 holding the second workpiece W2, which is about to begin the injection process, can be determined according to the injection conditions of the second workpiece W2. By moving the second holding device 42 at a moving speed corresponding to the injection conditions, the second injection process for the second workpiece W2 can begin at the same moving speed after the second workpiece W2 has moved to the injection position 84. As a result, the second injection process can be started earlier, thereby improving productivity.

[0128] Figure 8 This indicates the status of the second injection process performed on the second processed object W2. Figure 8In this configuration, a second holding device 42 is positioned at the injection position 84, and a first holding device 40 is positioned at the first transport position 80. The second holding device 42 reciprocates horizontally at the injection position 84 as indicated by arrow X to perform injection processing on the second workpiece W2. The first holding device 40, at the first transport position 80, uses a first lifting mechanism 50a to lift the first workpiece W1, after injection processing, through the first transport port 74. The first holding device 40, at the first transport position 80, uses the first lifting mechanism 50a to receive the first workpiece W1, before injection processing, through the first transport port 74.

[0129] exist Figure 8 In this configuration, the second holding device 42 holds the second workpiece W2 in an orientation such that the scanning beam SB irradiates the surface of the second workpiece W2 being processed. For example, with... Figure 4 Similarly, in (a), the second holding device 42 holds the second processed object W2 in a direction where the horizontal tilt angle α2 is 0. For example, with Figure 5 Similarly, in (a), the second holding device 42 holds the second processed object W2 in a direction where the vertical tilt angle β2 is 0. Figure 4 Similarly, in (b), the second holding device 42 can also hold the second processed object W2 in a direction in which the horizontal tilt angle α2 is not zero. Figure 5 Similarly, (b) the second holding device 42 can also hold the second processed object W2 in a direction in which the vertical tilt angle β2 is not 0. The second holding device 42 can also hold the second processed object W2 in a direction in which neither the horizontal tilt angle α2 nor the vertical tilt angle β2 is 0.

[0130] exist Figure 8 In this configuration, the first holding device 40 holds the first processed object W1 in an orientation that allows it to be moved in or out through the first conveying port 74. For example... Figure 5As shown in (c), the first holding device 40 holds the first workpiece W1 with the treated surface of the first workpiece W1 aligned with the horizontal direction. The first holding device 40 lifts the first workpiece W1 using the first lifting mechanism 50a, forming a gap 50b between the first suction cup mechanism 50 and the first workpiece W1. The first transport device 70 removes the first workpiece W1 after injection treatment by inserting the arm of the first transport robot into the gap 50b between the first suction cup mechanism 50 and the first workpiece W1. When the first workpiece W1 before injection treatment has been placed on the first lifting mechanism 50a using the arm of the first transport robot, the first holding device 40 releases the lifting of the first workpiece W1 and holds the first workpiece W1 on the first suction cup mechanism 50. After holding the first workpiece W1 before injection treatment, the first holding device 40 drives the first vertical angle adjustment mechanism 54 to change the vertical rotation angle. b1, the first processed object W1 is held in a direction in which the processed surface of the first processed object W1 is not along the horizontal direction.

[0131] Figure 9 This indicates a switch from the second injection process for the second processed object W2 to the first injection process for the first processed object W1. In other words, it indicates the end of the second injection process for the second processed object W2 and the beginning of the first injection process for the first processed object W1. Figure 9 In this process, the first holding device 40 moves from the first transport position 80 toward the injection position 84 as indicated by arrow F3, and the second holding device 42 moves from the injection position 84 toward the second transport position 82 as indicated by arrow F4. Figure 9 As shown, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required to switch from the second injection process to the first injection process can be shortened.

[0132] exist Figure 9 In this configuration, the first holding device 40 and the second holding device 42 can be moved in a manner that maintains the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, by making the moving speeds of the first holding device 40 and the second holding device 42 the same, the relative distance d can be kept constant. Alternatively, the moving speeds of the first holding device 40 and the second holding device 42 can be adjusted to maintain the relative distance d within a range from a predetermined upper limit to a lower limit. In this case, the moving speed of the first holding device 40 can be faster or slower than the moving speed of the second holding device 42. The relative distance d is preferably greater than the dimension in the horizontal direction (x3 direction) of the scanning beam SB.

[0133] exist Figure 9 In this process, the moving speed of the second holding device 42 holding the second workpiece W2, which is about to complete the injection process, can be the maximum speed that the second holding device 42 can adopt. By moving the second holding device 42 at its maximum speed, the time required from completing the second injection process for the second workpiece W2 to removing the second workpiece W2 can be shortened, thereby improving productivity. On the other hand, the moving speed of the first holding device 40 holding the first workpiece W1, which is about to start the injection process, can be determined according to the injection conditions of the first workpiece W1. By moving the first holding device 40 at a moving speed corresponding to the injection conditions, the first injection process for the first workpiece W1 can start at the same moving speed after the first workpiece W1 has moved to the injection position 84. As a result, the first injection process can start earlier, thereby improving productivity.

[0134] Figure 10 This is a flowchart illustrating the ion implantation method of an embodiment. First, a first workpiece W1 before implantation is moved into a first holding device 40 (S10). In S10, the first workpiece W1 before implantation can be moved into the first holding device 40 after the first workpiece W1 held by the first holding device 40 has been removed. Next, a second holding device 42 is moved to a second transport position 82 (S12), and a first holding device 40 is moved to a first implantation position (e.g., implantation position 84) (S14). S12 and S14 can be performed simultaneously, and can be performed in such a way that the execution periods of S12 and S14 at least partially overlap. Next, by moving the first holding device 40 back and forth at the first implantation position, the first workpiece W1 moving back and forth is irradiated with an ion beam (S16).

[0135] Before, during, or after S16, the second workpiece W2 before implantation is moved into the second holding device 42 (S18). In S18, the second workpiece W2 before implantation can be moved into the second holding device 42 after the implanted second workpiece W2 held by the second holding device 42 has been removed. Next, the first holding device 40 is moved to the first transport position 80 (S20), and the second holding device 42 is moved to the second implantation position (e.g., implantation position 84) (S22). S20 and S22 can be performed simultaneously, and can be performed in such a way that the execution periods of S20 and S22 overlap at least partially. Next, by moving the second holding device 42 back and forth at the second implantation position, the reciprocating second workpiece W2 is irradiated with an ion beam (S24).

[0136] Figure 10The illustrated process can be repeated. For example, the processing of S10 after repeated execution can be performed before, during, or after S24. The first processed object W1, held by the first holding device 40, after injection treatment, can be removed before, during, or after S24, and the first processed object W1 before injection treatment can be moved into the first holding device 40. This can be achieved through repeated execution. Figure 10 The process shown can repeatedly and alternately perform the first injection step for the first workpiece W1 held by the first holding device 40 and the second injection step for the second workpiece W2 held by the second holding device 42. Figure 10 The process shown can be repeated until the injection process for multiple items to be processed continuously is completed.

[0137] According to this embodiment, by providing multiple holding devices within the injection processing chamber 14, the injection process and the transport process of the processed items can be performed in parallel. For example, the transport process of the second processed item W2 can be performed simultaneously with the first injection process for the first processed item W1 held by the first holding device 40 using the second holding device 42. Furthermore, the transport process of the first processed item W1 can be performed simultaneously with the second injection process for the second processed item W2 held by the second holding device 42 using the first holding device 40. As a result, compared to the case where the injection process and the transport process are performed alternately using a single holding device, the time required for continuous processing of multiple processed items can be shortened, thereby improving productivity.

[0138] According to this embodiment, by configuring the multiple holding devices to move back and forth in the horizontal direction, the complexity of the structure of the implantation processing chamber 14 and the transport device 16 can be suppressed compared to a structure in which the multiple holding devices move back and forth in the vertical direction. Furthermore, by configuring the multiple holding devices to move back and forth in the horizontal direction, the vertical dimensions of the implantation processing chamber 14 and the transport device 16 can be suppressed. As a result, an ion implantation apparatus 10 with dimensions within the height limitations of a typical semiconductor manufacturing plant floor can be provided.

[0139] According to this embodiment, by configuring multiple holding devices to move along a common guide rail 44, the reciprocating movements of each of the multiple holding devices at the injection position can be made identical. As a result, differences in the injection environment can be prevented by using multiple holding devices. Consequently, deviations in the injection processing for multiple workpieces can be suppressed, while improving the productivity of the injection processing for multiple workpieces.

[0140] According to this embodiment, by scanning the ion beam back and forth in the vertical direction and moving the workpiece back and forth in the horizontal direction, the entire surface of the workpiece can be efficiently irradiated with the scanning beam. Furthermore, by deflecting the ion beam in the horizontal direction at the mass spectrometry unit 24 and the energy analysis unit 34, a beamline A traveling along the horizontal plane can be formed, thereby suppressing the vertical dimension of the beam generation apparatus 12.

[0141] According to this embodiment, by setting the front slit 20c of the ion source 20 to a slit shape that is long in the horizontal direction, an ion beam that diffuses horizontally through the extraction portion 22 can be generated. As a result, compared to the case where a point-like ion beam is extracted from the ion source 20, it is easier to generate an ion beam with a larger beam current. Furthermore, since the vertical dimension of the ion beam extracted from the ion source 20 is small, the spacing between the opposing magnetic poles of the mass spectrometry magnet device 24a through which the ion beam passes can be reduced. As a result, the size of the mass spectrometry magnet device 24a can be suppressed. For example, compared to a comparative example where the front slit of the ion source is set to a slit shape that is narrow in the horizontal direction and long in the vertical direction, the size of the mass spectrometry magnet device 24a can be suppressed while generating an ion beam with a larger beam current.

[0142] According to this embodiment, by using the beam shaping unit 26 to shape the horizontally diffused ion beam into a dot shape, a dot beam suitable for vertical beam scanning by the beam scanning unit 28 can be formed. By using the beam scanning unit 28 to scan the dot beam in the vertical direction, ions can be implanted into large-sized workpieces in the vertical direction. According to this embodiment, a scanning beam with a larger beam current can be used to irradiate large-sized workpieces in the vertical direction, thus improving the productivity of the implantation process.

[0143] In this embodiment, the direction of the applied magnetic field B1 at the ion source 20 is orthogonal to the direction of the applied magnetic field B2 at the mass spectrometer analysis unit 24. Therefore, the possibility of adverse effects on beam quality and magnetic field control due to mutual interference between the two increases. On the other hand, in the comparative example where the applied magnetic field at the ion source is perpendicular, the applied magnetic field at the ion source is parallel to the applied magnetic field at the mass spectrometer analysis unit. Therefore, even if there is slight interference between the two magnetic fields, it will not be a major problem. According to this embodiment, by providing a magnetic shield 23 between the extraction section 22 and the mass spectrometer analysis unit 24, magnetic field interference between the horizontal magnetic field B1 applied to the ion source 20 and the vertical magnetic field B2 applied to the mass spectrometer analysis unit 24 can be suppressed. As a result, both the plasma generation efficiency at the ion source 20 and the mass spectrometer analysis accuracy of the mass spectrometer analysis unit 24 can be achieved.

[0144] This embodiment can be applied to ion implantation processing for large-sized objects in the vertical direction. An example of a large-sized object in the vertical direction is a large substrate used in the manufacture of a flat panel display (FPD). The dimensions of such a large substrate in both the vertical and horizontal directions are, for example, 1m × 2m or more. Moving such a large object back and forth in the vertical direction is impractical. According to this embodiment, the object is moved back and forth in the horizontal direction, thus making the back-and-forth movement of the large substrate easier than moving it back and forth in the vertical direction. Ion implantation processing can be performed on the large substrate by irradiating it with a scanning beam that scans in the vertical direction while it is moving back and forth in the horizontal direction.

[0145] When the substrate being processed is a large substrate for an FPD (Flexible Printed Device), the ion implantation apparatus 10 may not include at least one of the beam parallelization section 30, acceleration / deceleration section 32, and energy analysis section 34. When the substrate being processed is a large substrate for an FPD, the implantation chamber 14 can be moved horizontally to move the substrate into and out of the chamber. For example, a large substrate before implantation can be moved into the implantation chamber 14 from the right (or left) side, and the substrate can be moved left (or right) within the chamber to perform ion implantation. The implanted substrate can then be removed from the left (or right) side of the chamber. Thus, the ion implantation apparatus 10 can process large substrates sequentially.

[0146] Figure 11 This is a flowchart illustrating a modified example of the ion implantation method. Figure 11 In the process, the first injection step for the first processed object W1 and the second injection step for the second processed object W2 are performed in parallel.

[0147] First, the first workpiece W1 before injection processing is moved into the first holding device 40 (S30). In S30, the first workpiece W1 before injection processing can be moved into the first holding device 40 after the first workpiece W1 held by the first holding device 40 has been removed. Then, the second workpiece W2 before injection processing is moved into the second holding device 42 (S32). In S32, the second workpiece W2 before injection processing can be moved into the second holding device 42 after the second workpiece W2 held by the second holding device 42 has been removed. The order of steps S30 and S32 is not important; S32 can start after S30 or after S32. Steps S30 and S32 can also be performed simultaneously.

[0148] Next, the first holding device 40 is moved to a first injection position (e.g., injection position 84) (S34). The first treated object W1 is irradiated with an ion beam by reciprocating movement of the first holding device 40 at the first injection position (S36). The number of reciprocating movements of the first treated object W1 in S36 is not particularly limited; for example, it may be only one reciprocation. Subsequently, the first holding device 40 is retracted from the first injection position (S38), and the second holding device 42 is moved to a second injection position (e.g., injection position 84) (S40). The first retraction position for retracting the first holding device 40 is, for example, located between the first transport position 80 and the first injection position. The first retraction position for retracting the first holding device 40 may also be the same as the first transport position 80.

[0149] Next, by reciprocating the second holding device 42 at the second injection position, the reciprocating second treated object W2 is irradiated with an ion beam (S42). The number of reciprocating movements of the second treated object W2 in S42 is not particularly limited; for example, it can be only one reciprocation. Afterward, the second holding device 42 is retracted from the second injection position (S44). The second retraction position for retracting the second holding device 42 is, for example, located between the second transport position 82 and the second injection position. The second retraction position for retracting the second holding device 42 can also be the same as the second transport position 82.

[0150] If the implantation process for the first processed object W1 and the second processed object W2 has not yet been completed (No in S46), then steps S34 to S44 are repeated until the implantation process is completed. For example, if the number of round trips required to complete the implantation process for the first processed object W1 and the second processed object W2 is three (i.e., three round trips), then steps S34 to S44 are repeated three times. At this time, the steps of irradiating the ion beam once for the first processed object W1 and irradiating the ion beam once for the second processed object W2 are alternately executed. At this time, the relative distance d between the first processed object W1 and the second processed object W2 can be minimized as much as possible to execute S38 and S40 simultaneously, and the relative distance d between the first processed object W1 and the second processed object W2 can be minimized as much as possible to execute S44 and S34 simultaneously. That is, it is possible to maintain a state in which the relative distance d between the first processed object W1 and the second processed object W2 is minimized, so that the first processed object W1 and the second processed object W2 move back and forth synchronously in the same direction. As a result, the utilization efficiency of the ion beam can be improved.

[0151] If the injection process is completed in S46 (S46 "Yes"), the first holding device 40 is moved to the first transport position 80 (S48), and the second holding device 42 is moved to the second transport position 82 (S50). The order of steps S48 and S50 is irrelevant; S50 can start after S48 or after S50. Steps S48 and S50 can also be performed simultaneously. Furthermore, when the first retraction position is the first transport position 80, the first holding device 40 is already positioned at the first transport position 80 in step S38, so step S48 can be omitted. Similarly, when the second retraction position is the second transport position 82, the second holding device 42 is already positioned at the second transport position 82 in step S44, so step S50 can be omitted.

[0152] Figure 11 The process shown can be repeated until the injection step for multiple items to be processed consecutively is completed. Based on... Figure 11 The process can simultaneously perform the first handling step of moving the first workpiece W1 in and out using the first holding device 40 and the second handling step of moving the second workpiece W2 in and out using the second holding device 42, thus improving productivity. Figure 11 The illustrated process is preferably applied when the implantation time of the ion beam irradiation of the workpiece is sufficiently short as to be less than the handling time required for the workpiece to be moved in and out (e.g., less than half). Furthermore, Figure 11 The process shown is preferably applied when the injection time of the ion beam irradiating the object to be treated is sufficiently long than the handling time required for removing and placing the object to be treated (e.g., more than twice as long). Figure 11 The illustrated process can also be applied when the implantation time of the ion beam irradiation of the treated object is approximately the same as the handling time required for the object to be removed and placed in, but in this case, Figure 10 The process shown may be more productive.

[0153] In the above embodiment, the beam generating apparatus 12 is shown to generate a scanning beam using a beam scanning unit 28 and a beam parallelization unit 30. In another embodiment, the beam generating apparatus may also generate a strip beam. The beam generating apparatus may include a strip beam generating unit instead of the beam scanning unit 28. The strip beam generating unit generates a strip beam by diverging a point-like ion beam in the vertical direction. The strip beam generating unit may be configured as an electric field type or a magnetic field type beam diverging device.

[0154] In the above embodiment, the ion beam extracted from the ion source 20 is shown as a strip-shaped beam that diffuses in the horizontal direction. In another embodiment, the ion beam extracted from the ion source may also be a strip-shaped beam that diffuses in the vertical direction. In this case, the front slit of the ion source has a slit shape with a long opening width in the vertical direction and a short opening width in the horizontal direction. Similarly, the extraction electrode of the extraction section has a slit shape with a long opening width in the vertical direction and a short opening width in the horizontal direction. In this case, the mass spectrometry analysis section is configured to deflect the strip-shaped beam that diffuses in the vertical direction in the horizontal direction. In this case, the beam generation apparatus may not include the beam scanning section 28 and the beam parallelization section 30. In this case, the ion source and the extraction section can be considered as a strip-shaped beam generation section for generating a strip-shaped beam that diffuses in the vertical direction.

[0155] In another embodiment described above, the size of the vertically diffused strip beam's irradiation range in the vertical direction is larger than the size of the workpiece in the vertical direction. Therefore, the beam generating apparatus for generating the strip beam is configured to irradiate an ion beam within an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed on the workpiece. Furthermore, in the above embodiment, the beam generating apparatus 12 for generating a scanning beam is configured to irradiate an ion beam within an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed on the workpiece.

[0156] In the above embodiment, a plurality of holding devices 40, 42 are shown to be provided in the injection processing chamber 14. In another embodiment, only one holding device may be provided in the injection processing chamber 14. The holding device may be configured in the same way as either the first holding device 40 or the second holding device 42 described above.

[0157] In the above embodiment, the scanning direction of the scanning beam SB is shown to be vertical. In another embodiment, the scanning direction of the scanning beam SB may also be inclined relative to the vertical direction. In this case, the beam scanning unit 28, the beam parallelization unit 30, the acceleration / deceleration unit 32, and the energy analysis unit 34 (for example, located downstream of the mass spectrometry analysis unit 24 and upstream of the beam scanning unit 28) are arranged in a position that rotates about the beam line A extending along the z2 direction as the rotation axis (i.e., arranged in an inclined direction). Alternatively, it may be configured such that only the beam scanning unit 28 and the beam parallelization unit 30 are rotated, without rotating at least one of the acceleration / deceleration unit 32 and the energy analysis unit 34. In this case, the scanning direction of the scanning beam SB is preferably within 45 degrees of the vertical direction.

[0158] In the above embodiment, the first holding device 40 and the second holding device 42 are shown moving in the horizontal direction. In another embodiment, the direction of movement of the first holding device 40 and the second holding device 42 may not be horizontal; they may be tilted relative to the horizontal direction. The direction of movement of the first holding device 40 and the second holding device 42 can be any direction across the scanning beam that is different from the horizontal direction.

[0159] One aspect of the present invention is as follows.

[0160] (Item 1) An ion implantation device comprising: Ion source, generates ions; An extraction section extracts ions from the ion source to generate an ion beam; The beam scanning unit is configured to scan the ion beam back and forth in a scanning direction different from the horizontal direction to generate a scanning beam; and The holding device is configured to hold the object being processed and to move the object being processed held by the holding device back and forth in a direction across the scanning beam.

[0161] (Item 2) The ion implantation apparatus as described in Item 1, wherein, The holding device is configured to allow the object being processed, which is held by the holding device, to move back and forth in the horizontal direction.

[0162] (Item 3) An ion implantation apparatus as described in Item 1 or 2, wherein, The scanning direction is within 45 degrees of the vertical direction.

[0163] (Item 4) An ion implantation apparatus as described in Item 1 or 2, wherein, The scanning direction is vertical.

[0164] (Item 5) The ion implantation apparatus as described in any one of items 1 to 4, wherein, The ion source has a front slit through which the ions extracted by the extraction section pass. The horizontal opening width of the front slit is greater than the vertical opening width of the front slit.

[0165] (Item 6) The ion implantation apparatus as described in Item 5, wherein, The ion source has the following characteristics: An arc chamber having an internal space and a front slit for drawing out the ions from a plasma generated in the internal space; and A magnet device that applies the horizontal magnetic field to the internal space.

[0166] (Item 7) An ion implantation apparatus as described in Item 5 or Item 6, wherein, The extraction portion includes an extraction electrode, which has an extraction opening for the ion beam to pass through. The width of the outlet in the horizontal direction is greater than the width of the outlet in the vertical direction.

[0167] (Item 8) The ion implantation apparatus as described in any one of items 1 to 7, wherein, The device further includes a mass spectrometry analysis unit, which is disposed between the extraction unit and the beam scanning unit, thereby deflecting the ion beam in the horizontal direction.

[0168] (Item 9) The ion implantation apparatus as described in Item 8, wherein, The mass spectrometry analysis unit includes a magnet device that applies a magnetic field in the vertical direction to the ion beam.

[0169] (Item 10) An ion implantation apparatus as described in Item 8 or 9, wherein, The device further includes a magnetic shielding component, which is disposed between the lead-out portion and the mass spectrometry analysis portion, and has a passage opening for the ion beam to pass through.

[0170] (Item 11) The ion implantation apparatus as described in any one of items 8 to 10, wherein, The device further includes a beamforming section disposed between the mass spectrometry analysis section and the beam scanning section, and includes at least one lens device for adjusting at least one of the profile shape and convergence / divergence angle of the ion beam.

[0171] (Item 12) The ion implantation apparatus as described in any one of items 1 to 11, wherein, It further includes a beam parallelization section, which is disposed downstream of the beam scanning section to make the scanning beam parallel.

[0172] (Item 13) The ion implantation apparatus as described in any one of items 1 to 12, wherein, The device further includes an energy analysis unit, which has a deflection device for deflecting the scanning beam in the horizontal direction and an energy analysis slit disposed downstream of the deflection device.

[0173] (Item 14) The ion implantation apparatus as described in Item 13, wherein, The deflection device includes an electrode pair facing each other across the scanning beam and a power source that applies a DC voltage to the electrode pair.

[0174] (Item 15) The ion implantation apparatus as described in Item 14, wherein, The electrode pairs of the deflection device are configured to face each other in the horizontal direction.

[0175] (Item 16) The ion implantation apparatus as described in Item 14, wherein, The electrode pairs of the deflection device are configured to face each other in a direction orthogonal to the scanning direction.

[0176] (Item 17) An ion implantation method comprising the following steps: Use an ion source to generate ions; Ions are extracted from the ion source to generate an ion beam; The ion beam is scanned back and forth in a scanning direction different from the horizontal direction to generate a scanning beam; and The object being processed is moved back and forth in a direction spanning the scanning beam.

[0177] One aspect of the present invention is as follows.

[0178] (Item 18) An ion implantation apparatus comprising: A beam generating device is configured to generate an ion beam that irradiates a workpiece, wherein the ion beam irradiates a vertical irradiation range whose size is larger than the size of the surface to be treated of the workpiece. A first holding device is configured to hold a first object to be treated, and is configured to allow the first object to be treated to reciprocate in a horizontal direction so that the first object to be treated held by the first holding device spans the irradiation range; and The second holding device is configured to hold the second object to be treated and to move the second object to be treated back and forth in the horizontal direction so that the second object to be treated held by the second holding device spans the irradiation range.

[0179] (Item 19) The ion implantation apparatus as described in Item 18, wherein, The first holding device is configured to move between a first injection position for irradiating the first treated object with the ion beam and a first transport position for moving the first treated object onto or from the first holding device. The second holding device is configured to move between a second injection position for irradiating the second subject with the ion beam and a second transport position for moving the second subject onto or from the second holding device.

[0180] (Item 20) The ion implantation apparatus as described in Item 19, wherein, The first injection position and the second injection position are located between the first transport position and the second transport position.

[0181] (Item 21) An ion implantation apparatus as described in Item 19 or 20, wherein, When viewed from the beam travel direction, the first range of movement of the first treated object at the first injection position caused by the first holding device overlaps with the second range of movement of the second treated object at the second injection position caused by the second holding device.

[0182] (Item 22) The ion implantation apparatus as described in Item 21, wherein, The first moving range is the same as the second moving range.

[0183] (Item 23) The ion implantation apparatus as described in any one of items 19 to 22, wherein, The position of the first processed object held by the first holding device at the first injection position in the vertical direction is the same as the position of the second processed object held by the second holding device at the second injection position in the vertical direction.

[0184] (Item 24) The ion implantation apparatus as described in any one of items 19 to 23, wherein, The position of the first processed object held by the first holding device at the first injection position in the beam travel direction is the same as the position of the second processed object held by the second holding device at the second injection position in the beam travel direction.

[0185] (Item 25) The ion implantation apparatus as described in any one of items 19 to 24, wherein, The first holding device is configured to be unable to move to the second transport position. The second holding device is configured to be unable to move to the first transport position.

[0186] (Item 26) The ion implantation apparatus as described in any one of items 18 to 25, wherein, The first holding device and the second holding device are capable of moving in the same direction.

[0187] (Item 27) The ion implantation apparatus as described in any one of items 18 to 26, wherein, The first holding device and the second holding device are capable of moving simultaneously in the same direction while maintaining the relative distance between the first processed object held by the first holding device and the second processed object held by the second holding device.

[0188] (Item 28) The ion implantation apparatus as described in any one of items 18 to 27, wherein, The first holding device and the second holding device are capable of moving along a common guide rail.

[0189] (Item 29) The ion implantation apparatus as described in any one of items 18 to 28, wherein, The first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed in the vertical direction and a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction. The second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed in the vertical direction and a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction.

[0190] (Item 30) The ion implantation apparatus as described in any one of items 18 to 28, wherein, The first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed by rotating about the horizontal rotation axis, and a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed by rotating about the vertical direction. The second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed by rotating about the horizontal rotation axis, and a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed by rotating about the vertical rotation axis.

[0191] (Item 31) The ion implantation apparatus as described in any one of Items 18 to 28, wherein, The first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first workpiece. The first vertical angle adjustment mechanism is configured such that, when the first workpiece is being moved in or out, the surface of the workpiece being processed is aligned with the horizontal direction, and when the first workpiece is irradiated with the ion beam, the surface of the workpiece being processed is not aligned with the horizontal direction. The second holding device includes a second vertical angle adjustment mechanism for adjusting the direction of the second object to be processed. The second vertical angle adjustment mechanism is configured such that when the second object to be processed is being moved in or out, the surface of the object to be processed is aligned with the horizontal direction, and when the object to be processed is irradiated with the ion beam, the surface of the object to be processed is not aligned with the horizontal direction.

[0192] (Item 32) The ion implantation apparatus as described in any one of items 18 to 31, wherein, The first holding device includes a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction and a first torsion mechanism for adjusting the torsion angle of the first object to be processed. The second holding device includes a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction and a second torsion mechanism for adjusting the torsion angle of the second object to be processed.

[0193] (Item 33) The ion implantation apparatus as described in any one of items 18 to 32, wherein, The beam generating apparatus includes a beam scanning unit that scans the ion beam back and forth within the irradiation range.

[0194] (Item 34) The ion implantation apparatus as described in any one of items 18 to 32, wherein, The beam generating apparatus includes a strip beam generating section that generates a strip beam having a beam size corresponding to the size of the irradiation range.

[0195] (Item 35) An ion implantation method, comprising the following steps: Generate an ion beam to irradiate the object being treated; The ion beam is irradiated within the irradiation range whose size in the vertical direction is larger than the size of the surface to be treated of the object being treated. The first object to be processed is held using the first holding device; The first holding device is used to move the first subject back and forth in the horizontal direction in such a way that the first subject is traversed across the irradiation range; The second object to be processed is held by the second holding device; and The second holding device is used to move the second treated object back and forth in the horizontal direction in such a way that the second treated object crosses the irradiation range.

[0196] Figure 12 This is a top view showing the schematic configuration of an ion implantation apparatus 10A according to another embodiment. Figure 13 This is a side view showing the schematic configuration of an ion implantation apparatus 10A according to another embodiment. Figure 12 and Figure 13 The ion implantation device 10A shown is Figure 1 and Figure 2 The difference in the ion implantation apparatus 10 shown is that it further includes a beam analyzer 46 disposed in the implantation processing chamber 14. Hereinafter, the ion implantation apparatus 10A will be described focusing on the differences from the above embodiment, and descriptions of commonalities will be omitted as appropriate.

[0197] A beam analyzer 46 is disposed inside the injection processing chamber 14. The beam analyzer 46 is a beam measuring device used to measure the position of the scanning beam SB on the surface of the treated objects W1 and W2. The beam analyzer 46 is configured to be movable in the vertical direction (y-direction) by the action of the profilometer drive device 47. The beam analyzer 46 retracts from the injection position where the treated object W1 or W2 is located during ion injection and inserts into the injection position when the treated object W1 or W2 is not in the injection position.

[0198] Figure 14 This is a schematic front view showing the movable range of the beam analyzer 46, as described above. Figure 3 The addition of a beam analyzer 46 completed the process. Figure 14 The beam analyzer 46 indicates the state of insertion into the injection position. The beam analyzer 46 is movable in the vertical direction (y-direction) via the movement of the profilometer drive 47, as indicated by arrow H. The beam analyzer 46 is configured, for example, to be able to scan the size h of the irradiation range in the vertical direction of the beam SB. B It is internally movable and configured to move between an upper position 46a, which is vertically higher than the scanning beam SB, and a lower position 46b, which is vertically lower than the scanning beam SB. When the beam analyzer 46 is retracted from the injection position, the beam analyzer 46 is, for example, positioned at the upper position 46a.

[0199] The beam analyzer 46 includes a profile measuring cup, which is a Faraday cup used to measure the beam current of the scanning beam SB. By measuring the beam current while moving in the vertical direction (y-direction), the beam analyzer 46 can measure the beam current across the entire beam scanning range of the scanning beam SB. The beam analyzer 46 can be a measuring device for determining the beam current density distribution in the vertical direction (y-direction) of the scanning beam SB.

[0200] The beam analyzer 46 may also include an angle measuring device for determining the angle information of the scanning beam SB. The angle measuring device may include: a first angle measuring device capable of measuring angle information in the horizontal direction (x-direction) of the scanning beam SB; and a second angle measuring device capable of measuring angle information in the vertical direction (y-direction) of the scanning beam SB. The beam analyzer 46 may also be a measuring device for measuring angle information in both the x-direction and y-direction, and may measure angle centroids or convergence / divergence angles as angle information.

[0201] The following describes the angle measuring device that can be used in the beam analyzer 46.

[0202] (First Embodiment) Figure 15This is a cross-sectional view showing the schematic configuration of the angle measuring device 100 according to the first embodiment. The angle measuring device 100 is configured to measure angle information in the first direction of the scanning beam SB. Figure 15 This indicates the case where the first direction is parallel to the scanning direction (y direction), but the direction of the angle information measured by the angle measuring device 100 (i.e., the first direction) is not particularly limited, and the first direction may also be tilted relative to the scanning direction.

[0203] The angle measuring device 100 includes an incident surface 104 with an incident opening 102, an exit surface 108 with an exit opening 106, an electrode assembly 110, a power supply 112, and a current measuring device 114.

[0204] The angle measuring device 100 may include a front panel 116 having an incident surface 104. An incident opening 102 is formed to penetrate the front panel 116. The incident opening 102 allows a portion of the scanning beam SB incident on the incident surface 104 to pass through. The incident opening 102 has an opening shape with a short opening width in at least a first direction.

[0205] The angle measuring device 100 may include a back panel 118 having an exit surface 108. The back panel 118 is disposed away from the front panel 116 in the direction of travel of the scanning beam SB (i.e., the z-direction). An exit opening 106 is formed to penetrate the back panel 118. The exit opening 106 allows a portion of the ion beam after passing through the incident opening 102 to pass through. Similar to the incident opening 102, the exit opening 106 has an opening shape with a short opening width in at least a first direction. The exit opening 106 is configured, for example, to coincide with the position of the incident opening 102 in the x-direction and y-direction orthogonal to the direction of travel (z-direction) of the scanning beam SB.

[0206] Figure 16 (a) is a plan view showing the schematic configuration of the incident surface 104 having the incident opening 102. Figure 16 (b) is a plan view showing the schematic configuration of the exit surface 108 having the exit opening 106. The incident opening 102 may have a slit shape with a short opening width w1 in the first direction (e.g., the y-direction) and a long opening width w2 in a direction orthogonal to the first direction (e.g., the x-direction). The incident opening 102 may be, for example, a slit with a slit width direction parallel to the scanning direction of the scanning beam SB.

[0207] The opening width w1 of the entrance opening 102 in the slit width direction is, for example, 10 mm or less, 5 mm or less, or 3 mm or less. The opening width w1 of the entrance opening 102 in the slit width direction is, for example, 0.1 mm or more, 0.5 mm or more, or 1 mm or more. The opening width w2 of the slit length direction orthogonal to the first direction of the entrance opening 102 is, for example, longer than the beam width in the x-direction of the scanning beam SB. The opening width w2 of the entrance opening 102 in the slit length direction is, for example, 10 mm or more, 20 mm or more, or 30 mm or more. The opening width w2 of the entrance opening 102 in the slit length direction is, for example, 200 mm or less, 150 mm or less, or 100 mm or less.

[0208] The exit opening 106 may have the same shape and size as the entrance opening 102. The exit opening 106 may be, for example, a slit with a slit width direction parallel to the scanning direction of the scanning beam SB. The opening width w3 of the exit opening 106 in the slit width direction may be the same as the opening width w1 of the entrance opening 102 in the slit width direction. The opening width w4 of the exit opening 106 in the slit length direction may be the same as the opening width w2 of the entrance opening 102 in the slit length direction.

[0209] Furthermore, the opening width w2 of the incident opening 102 in the direction orthogonal to the first direction can also be shorter than the beam width of the scanning beam SB. The opening width w2 of the incident opening 102 in the direction orthogonal to the first direction can also be approximately the same as the opening width w1 of the incident opening 102 in the first direction. In this case, the opening shape of the incident opening 102 can be square or circular, rather than a slit shape. Similarly, the opening width w4 of the exit opening 106 in the direction orthogonal to the first direction can also be shorter than the beam width of the scanning beam SB in the direction orthogonal to the first direction. The opening width w4 of the exit opening 106 in the direction orthogonal to the first direction can also be approximately the same as the opening width w3 of the exit opening 106 in the first direction. In this case, the opening shape of the exit opening 106 can be square or circular, rather than a slit shape.

[0210] Return to Figure 15Electrode assembly 110 is disposed between incident surface 104 and exit surface 108. Electrode assembly 110 has a first electrode surface 122 and a second electrode surface 124 facing each other in a first direction, separated by an ion beam from incident opening 102 toward exit opening 106. The first electrode surface 122 and the second electrode surface 124 face each other in a manner that makes them parallel to each other. The facing distance d of the first electrode surface 122 and the second electrode surface 124 in the first direction is sufficiently large than the opening widths w1 and w3 of the incident opening 102 and the incident surface 104 in the first direction. Here, "sufficiently large" means large enough not to obstruct the delivery of the ion beam from incident opening 102 toward exit opening 106. The facing distance d of the first electrode surface 122 and the second electrode surface 124 in the first direction is, for example, 5 mm or more, 10 mm or more, or 15 mm or more. The opposing distance d of the first electrode surface 122 and the second electrode surface 124 in the first direction is, for example, less than 50 mm, less than 30 mm, or less than 20 mm.

[0211] The electrode assembly 110 may include a first electrode body 126 having a first electrode surface 122 and a second electrode body 128 having a second electrode surface 124. Side plates 120 may be provided around the electrode assembly 110 to surround the first electrode body 126 and the second electrode body 128. The side plates 120 may be configured to extend cylindrically from the front panel 116 toward the back panel 118. The front panel 116, back panel 118, and side plates 120 may form a frame for housing the electrode assembly 110. The front panel 116, back panel 118, and side plates 120 may be grounded and have a ground potential.

[0212] Power supply 112 applies a voltage to electrode assembly 110, creating a potential difference ΔV between the first electrode surface 122 and the second electrode surface 124. Power supply 112 is a variable voltage source, allowing the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 to be variable. Power supply 112 may include: a first power supply 130 connected to the first electrode surface 122 or the first electrode body 126; and a second power supply 132 connected to the second electrode surface 124 or the second electrode body 128. Power supply 112 may also include only one of the first power supply 130 or the second power supply 132. In this case, the electrode surface or electrode body not connected to the first power supply 130 or the second power supply 132 can be grounded and have a ground potential.

[0213] Power supply 112 applies a voltage, for example, to maximize the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124, for example, to 500V or more, 1000V or more, or 2000V or more. The first power supply 130 and the second power supply 132 are each configured, for example, to apply a voltage with an absolute value of up to 1000V. For example, by setting the applied voltage of the first power supply 130 to -1000V and the applied voltage of the second power supply 132 to +1000V, the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 can be made 2000V. Power supply 112 changes the applied voltage, for example, according to a command value from control device 18.

[0214] The electrode assembly 110 and the power supply 112 function as deflection devices to deflect the ion beam from the entrance opening 102 toward the exit opening 106. Figure 15 The trajectories 151, 152, and 153 represent the ion beams deflected by the electric field E generated by the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124. The magnitude of the electric field E can be expressed using the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 and the opposing distance d as E = ΔV / d. Trajectory 151, represented by a thick line, represents the ion beam that can pass through both the incident opening 102 and the exit opening 106. Trajectories 152 and 153, represented by thin lines, represent the ion beams that cannot pass through the exit opening 106 and are blocked by the exit surface 108 or the back panel 118. The ion beam along trajectory 152 cannot pass through the exit opening 106 because the angle θy in the first direction is slightly larger than that along trajectory 151. Similarly, the ion beam along trajectory 153 cannot pass through the exit opening 106 because the angle θy in the first direction is slightly smaller than that along trajectory 151. Therefore, the ion beam emitted from the emission opening 106 is limited to the angle θy in the first direction at the incident opening 102 within a specific range.

[0215] The angle θy of the ion beam emitted from the exit opening 106 at the entrance opening 102 in the first direction varies depending on the electric field E, i.e., the potential difference ΔV, between the first electrode surface 122 and the second electrode surface 124. Therefore, by changing the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124, the angle θy of the ion beam emitted from the exit opening 106 at the entrance opening 102 in the first direction can be changed.

[0216] The current measuring device 114 measures the beam current value by detecting the ion beam after it passes through the emission opening 106. The current measuring device 114 includes a Faraday cup 134 for detecting the ion beam and a galvanometer 136 connected to the Faraday cup 134. The current measuring device 114 may further include a suppression electrode 138 disposed between the emission surface 108 and the Faraday cup 134. The suppression electrode 138 is connected to a suppression power supply 140 for applying a predetermined suppression voltage. The suppression electrode 138 has a passage opening 142 for the ion beam to pass through from the emission opening 106 toward the Faraday cup 134. The passage opening 142 has an opening shape that is sufficiently larger than the emission opening 106 so as not to obstruct the ion beam from the emission opening 106 toward the Faraday cup 134. Alternatively, a configuration applying a suppression magnetic field to suppress electron movement can be used instead of a configuration applying a suppression electric field to suppress electron movement.

[0217] The angle measuring device 100 may further include a measuring control device 144. The measuring control device 144 includes a processor 144a and a memory 144b. For example, the measuring control device 144 executes a predetermined program stored in the memory 144b via the processor 144a, and controls the overall operation of the angle measuring device 100 according to the predetermined program. The measuring control device 144 may be configured similarly to the control device 18 described above. The angle measuring device 100 may be controlled by the control device 18, in addition to or in place of the measuring control device 144.

[0218] The measurement control device 144 outputs a command value for setting the applied voltage of the power supply 112. For example, the measurement control device 144 outputs a command value for applying a variable voltage to the electrode assembly 110, causing the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 to change over time. The measurement control device 144 may also output a command value for periodically changing the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124. The measurement control device 144 may also output a command value representing the timing value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124.

[0219] Measurement control device 144 acquires the beam current value I measured by current meter 114. Measurement control device 144 uses the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 based on a command value and the acquired beam current value I to calculate the angular information of the scanning beam SB in the first direction. Measurement control device 144, for example, uses the beam energy of the scanning beam SB and the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 to calculate the angle θy of the ion beam detected by current meter 114 in the first direction at the incident opening 102. Measurement control device 144 calculates the intensity of the angular component in the first direction of the scanning beam SB by establishing a correspondence between the calculated angle θy and the acquired beam current value. The measurement control device 144 establishes a correspondence between the values ​​of multiple potential differences ΔVi (i=1 to n) between the first electrode surface 122 and the second electrode surface 124 and multiple beam current values ​​Ii (i=1 to n) corresponding to the values ​​of the multiple potential differences ΔVi, and is able to calculate the angular distribution in the first direction of the scanning beam SB.

[0220] The measurement control device 144 can change the value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 in accordance with the scanning period Ts of the scanning beam SB. The measurement control device 144 can fix the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 when the scanning beam SB is incident on the angle measuring device 100 (specifically, the incident surface 104). In other words, the measurement control device 144 can change the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 when the scanning beam SB is not incident on the angle measuring device 100 (specifically, the incident surface 104).

[0221] Figure 17 This is a graph representing an example of the scanning voltage waveform Vs(t) of the scanning beam SB and the time waveform ΔV(t) of the potential difference in the angle measuring device 100. The vertical axis of the graph represents the voltage value V, and the maximum absolute value of each of the scanning voltage Vs and the potential difference ΔV is normalized and set as Vmax. The scanning frequency fs (=1 / Ts) corresponding to the scanning period Ts of the scanning voltage waveform Vs(t) is, for example, 10Hz or more or 100Hz or more, and for example, 100kHz or less or 10kHz or less. An example of a scanning frequency fs is 1kHz.

[0222] Figure 17 In the diagram, a black circle indicates the measurement timing tj (e.g., j = 1 to 2n) when the scanning beam SB is incident on the angle measuring device 100. Figure 17In the example, the angle measuring device 100 is located at the center of the scanning direction (i.e., the y-direction) of the scanning beam SB, and the scanning beam SB is incident on the angle measuring device 100 when the scanning voltage Vs = 0. In addition, there is no particular limitation on the position of the angle measuring device 100, and the angle measuring device 100 can also be configured such that the scanning beam SB is incident on the angle measuring device 100 at a specific time when the scanning voltage Vs is a non-zero value.

[0223] The time waveform ΔV(t) of the potential difference in the angle measuring device 100 changes periodically corresponding to the scanning period Ts. The value of the potential difference ΔV(t) is fixed at the measurement timing tj when the scanning beam SB is incident on the angle measuring device 100, and changes at timings different from the measurement timing tj. Figure 17 In the example, the value of the potential difference ΔV changes when the scan voltage Vs = -Vmax. Furthermore, there are no particular restrictions on when the value of the potential difference ΔV changes; any time different from the measurement time tj can be chosen, for example, it can be set to the time when the scan voltage Vs = +Vmax.

[0224] exist Figure 17 In the example, the potential difference ΔV is changed at each scan cycle Ts, setting 15 stages of voltage values ​​from -Vmax towards +Vmax. Figure 17 In the example, only the process of the potential difference ΔV changing from -Vmax to +Vmax is shown, but it can also change in the opposite direction, from Vmax to -Vmax, or from +Vmax to -Vmax after changing from -Vmax to +Vmax. Furthermore, the potential difference ΔV can be changed repeatedly between -Vmax and +Vmax. The time it takes for the potential difference ΔV to change from -Vmax to +Vmax is equivalent to half the deflection period Td (Td / 2) of the potential difference ΔV. Figure 17 In the example, the deflection period Td is 28 times the scan period Ts (i.e., Td = 28 × Ts). Therefore, the deflection frequency fd (= 1 / Td) corresponding to the deflection period Td is 1 / 28 of the scan frequency fs.

[0225] There is no particular limitation on the number of stages for the voltage value of the time waveform ΔV(t) of the potential difference; for example, it can be set to 10 or more, 15 or more, or 20 or more, or 100 or less, 50 or less, or 30 or less. Increasing the number of stages can improve measurement accuracy (e.g., angular resolution), but the measurement time will increase. Therefore, the number of stages for the time waveform ΔV(t) of the potential difference can be appropriately set according to the balance between the required angular resolution and the measurement time. Furthermore, the value of the potential difference ΔV can be changed every half of the scan cycle Ts instead of changing the value of the potential difference ΔV every scan cycle Ts. In this case, the measurement time can be shortened. Alternatively, the value of the potential difference ΔV can be changed every integer multiple of the scan cycle Ts (e.g., k•Ts). In this case, the number of measurements of the scanning beam SB in one stage increases, thus improving measurement accuracy. The deflection frequency fd can be set to, for example, more than 1 / 1000, more than 1 / 500, or more than 1 / 200 of the scan frequency fs, or less than 1 / 10, less than 1 / 20, or less than 1 / 50 of the scan frequency fs. An example of a deflection frequency fd is approximately 1 / 100 of the scan frequency fs, for example, around 10 Hz. Preferably, the deflection frequency fd is set differently from the scan frequency fs.

[0226] Figure 18 (a) is a graph representing an example of the time waveform I(t) of the beam current detected in the angle measuring device 100. Figure 18 (a) is equivalent to using Figure 17 The time waveform of the beam current I(t) is shown when the potential difference ΔV is measured. The time waveform of the beam current I(t) is composed of the time sequence values ​​of the pulsed beam current Ij measured at multiple measurement points tj. Figure 18 In example (a), during a period when the potential difference ΔVi (=ΔV(t)) is fixed, the scanning beam SB is incident on the angle measuring device 100 once round trip (a total of 2 times). Therefore, for a specific potential difference ΔVi, two pulsed beam currents Ij are measured. Using these two beam current values ​​Ij, for example, by adding or averaging them, the beam current value Ii corresponding to the specific potential difference ΔVi can be obtained. Furthermore, by converting the potential difference ΔVi into an angle θyi, the beam current value Ii corresponding to the angle θyi can be obtained. Figure 18 (b) indicates the use of Figure 18 A graph of an example of the angular distribution of the scanning beam calculated from the time waveform I(t) of the beam current in (a), for example, the angular distribution shown by the dashed line 156 can be calculated.

[0227] According to this embodiment, the angle information in the first direction of the scanning beam SB can be accurately acquired in a short time. By reciprocating scanning of the scanning beam SB incident on the angle measuring device 100 using a beam scanning unit 28 (also called a beam scanning device) disposed upstream of the angle measuring device 100, the entire beam can be measured even without moving the angle measuring device 100. Furthermore, the deflection period Td required to acquire the angle distribution can be set to less than 1 second or less than 0.1 seconds, thus enabling the measurement of the angle distribution in the first direction of the scanning beam SB in an extremely short time. Moreover, the angle resolution can be improved by increasing the number of stages of the potential difference ΔVi, thus improving measurement accuracy compared to the conventional configuration that uses multiple electrodes to measure the angle distribution.

[0228] In the above embodiment, the case where the deflection frequency fd is less than the scan frequency fs, i.e., the deflection period Td is greater than the scan period Ts, is shown. In a modified example, the deflection frequency fd may also be greater than the scan frequency fs, and the deflection period Td may also be less than the scan period Ts. For example, the scan frequency fs may be set to a small value such as 10 Hz or less, and the deflection frequency fd may be set to, for example, more than 10 times, more than 20 times, or more than 50 times the scan frequency fs, or for example, less than 1000 times, less than 500 times, or less than 200 times. The deflection frequency fd may, for example, be more than 100 Hz, more than 500 Hz, or more than 1 kHz, or for example, less than 100 kHz, less than 50 kHz, or less than 10 kHz. In this case, multiple beam current values ​​Ii corresponding to multiple potential differences ΔVi can be obtained during the round trip or single-pass scanning of the scanning beam SB. Therefore, even in this case, the angular distribution in the first direction of the scanning beam SB can be measured during a scan period Ts of less than 1 second or less than 0.1 seconds. At this point, the deflection frequency fd can also be set to an integer multiple of the scanning frequency fs, which is not an integer multiple of the scanning frequency fs.

[0229] In the above embodiments, the scanning voltage waveform Vs(t) is shown as a triangular wave, but the shape of the scanning voltage waveform Vs(t) is not limited; it can be a sine wave, a modulated triangular wave or a sine wave, or a stepped waveform. Furthermore, in the above embodiments, the potential difference time waveform ΔV(t) is shown as a stepped waveform, but the shape of the potential difference time waveform ΔV(t) is not limited; it can be a triangular wave, a sine wave, or a modulated triangular wave or a sine wave. The scanning voltage waveform Vs(t) and the potential difference time waveform ΔV(t) can each be any periodically changing waveform, such as a stepped waveform, a triangular wave, a sine wave, a modulated triangular wave, or a sine wave. Alternatively, the deflection frequency fd of the potential difference time waveform ΔV(t) can be set to not be an integer multiple of the scanning frequency fs of the scanning voltage waveform Vs(t), and the scanning frequency fs can not be an integer multiple of the deflection frequency fd.

[0230] In the above embodiments, the case where the scanning beam SB is the measurement object has been described. However, the angle measuring device 100 can also measure ion beams that have not been scanned by the beam scanning device. In this case, in order to measure the entire unscanned ion beam, the angle measuring device 100 can be moved in the scanning direction (y direction) to perform the ion beam measurement. Furthermore, the angle measuring device 100 can also be moved in the scanning direction (y direction) to perform the measurement of the scanning beam SB.

[0231] (Second Implementation) Similar to the first embodiment, the angle measuring device of the second embodiment includes an incident surface, an exit surface, an electrode assembly, a power supply, and a current measuring device. The difference between the second embodiment and the first embodiment is that the incident surface has multiple incident openings, and the exit surface has multiple exit openings. Hereinafter, the angle measuring device of the second embodiment will be described focusing on the differences from the first embodiment, and descriptions of commonalities will be omitted where appropriate.

[0232] Figure 19 and Figure 20 This is a plan view showing the general configuration of the angle measuring device 200 according to the second embodiment. Figure 19This diagram shows the incident surface 204 having multiple incident openings 202a, 202b, and 202c as viewed from the upstream side in the beam travel direction (z-direction). The multiple incident openings 202a to 202c are arranged within the measurement range D along a direction orthogonal to the scanning direction of the scanning beam SB (x-direction). The opening ranges D1, D2, and D3 in the x-direction where the multiple incident openings 202a to 202c are provided are continuous without gaps in the x-direction and do not overlap in the x-direction. The multiple incident openings 202a to 202c are formed to penetrate the front panel 216 having the incident surface 204.

[0233] Multiple incident openings 202a-202c have slit shapes with short opening widths w1a, w1b, w1c in the p direction (slanted relative to the scanning direction, y-direction) and long opening widths w2a, w2b, w2c in the q direction (orthogonal to the p direction). The opening widths w1a-w1c in the slit width direction (i.e., the p direction) of the multiple incident openings 202a-202c are identical to each other. The opening widths w2a, w2b, w2c in the slit length direction (q direction) of the multiple incident openings 202a-202c can be identical or different. Figure 19 In the example, the opening width w2b of the second incident opening 202b located in the center is longer than the opening width w2a, w2c of the first incident opening 202a and the third incident opening 202c located on the left and right sides in the slit length direction.

[0234] Figure 20 This diagram shows the exit surface 208 having multiple exit openings 206a, 206b, and 206c, viewed from the downstream side in the beam travel direction (z-direction). The multiple exit openings 206a to 206c can have the same shape and size as the corresponding entrance openings 202a to 202c. The multiple exit openings 206a to 206c are configured such that their positions in the x- and y-directions orthogonal to the travel direction of the scanning beam SB coincide with those of the corresponding entrance openings 202a to 202c. The opening widths w3a, w3b, and w3c of the multiple exit openings 206a to 206c in the slit width direction can be the same as the opening widths w1a to w1c of the corresponding entrance openings 202a to 202c in the slit width direction. The opening widths w4a, w4b, and w4c of the multiple exit openings 206a to 206c along the slit length direction can be the same as the opening widths w2a to w2c of the corresponding entrance openings 202a to 202c along the slit length direction.

[0235] exist Figure 19 and Figure 20In the example shown, the angle measuring device 200 has three incident openings 202a to 202c and three exit openings 206a to 206c. That is, the angle measuring device 200 has a first incident opening 202a, a second incident opening 202b, and a third incident opening 202c provided on the incident surface 204, and a first exit opening 206a, a second exit opening 206b, and a third exit opening 206c provided on the exit surface 208. In addition, the number of incident openings and exit openings provided by the angle measuring device 200 is not limited to three; it can also be two or more.

[0236] exist Figure 19 and Figure 20 In the example shown, the angle θ1 between the slit width direction (p direction) and the scanning direction (y direction) of the multiple incident openings 202a-202c and the multiple exit openings 206a-206c is 45 degrees. Furthermore, there are no particular restrictions on the angle θ1 between the slit width direction (p direction) and the scanning direction (y direction); for example, it can be 5 degrees or more, 15 degrees or more, or 30 degrees or more, and it can be less than 85 degrees, less than 75 degrees, or less than 60 degrees.

[0237] Figure 21 This is a cross-sectional view showing the schematic configuration of the electrode assembly 210 according to the second embodiment. The electrode assembly 210 is disposed between the incident surface 204 and the ejection surface 208. Similar to the above... Figure 15 different, Figure 21 The diagram shows a cross-sectional view orthogonal to the travel direction (z-direction) of the scanning beam SB. Figure 21 In the image, the positions of multiple incident openings 202a to 202c are shown by dashed lines.

[0238] Electrode assembly 210 has a first electrode surface 222a, a second electrode surface 224a, a third electrode surface 224b, a fourth electrode surface 222b, a fifth electrode surface 222c, and a sixth electrode surface 224c. The first electrode surface 222a and the second electrode surface 224a face each other in a first direction at a first distance d1, separated by an ion beam from a first incident opening 202a toward a first exit opening 206a. The first direction is parallel to the slit width direction (p direction) of the first incident opening 202a. The third electrode surface 224b and the fourth electrode surface 222b face each other in a second direction at a second distance d2, separated by an ion beam from a second incident opening 202b toward a second exit opening 206b. The second direction is parallel to the slit width direction (p direction) of the second incident opening 202b. The fifth electrode surface 222c and the sixth electrode surface 224c are oriented relative to each other in a third direction at a third distance d3, separated by an ion beam extending from the third incident opening 202c toward the third exit opening 206c. This third direction is parallel to the slit width direction (p direction) of the third incident opening 202c. Therefore, in Figure 21In the example shown, the first, second, and third directions are parallel to each other. Furthermore, the first distance d1, the second distance d2, and the third distance d3 are the same.

[0239] A power supply 112 is connected to the electrode assembly 210. The power supply 112 is configured similarly to that in the first embodiment. The power supply 112 causes a potential difference to be generated between two opposing electrode surfaces. The power supply 112 causes a first potential difference to be generated between the first electrode surface 222a and the second electrode surface 224a, a second potential difference to be generated between the third electrode surface 224b and the fourth electrode surface 222b, and a third potential difference to be generated between the fifth electrode surface 222c and the sixth electrode surface 224c.

[0240] Electrode assembly 210 includes a first electrode body 226 and a second electrode body 228. The first electrode body 226 has a first electrode surface 222a, a fourth electrode surface 222b, and a fifth electrode surface 222c. The second electrode body 228 has a second electrode surface 224a, a third electrode surface 224b, and a sixth electrode surface 224c. The first electrode body 226 is connected to a first power supply 130, and the second electrode body 228 is connected to a second power supply 132. At this time, the magnitudes of the first potential difference, the second potential difference, and the third potential difference are the same. However, the directions of the electric field generated between the two opposing electrode surfaces may be different. The direction of the first electric field Ea based on the first potential difference between the first electrode surface 222a and the second electrode surface 224a is the same as the direction of the third electric field Ec based on the third potential difference between the fifth electrode surface 222c and the sixth electrode surface 224c, but opposite to (or antiparallel to) the direction of the second electric field Eb based on the second potential difference between the third electrode surface 224b and the fourth electrode surface 222b.

[0241] Side plates 220 may be provided around the electrode assembly 210 to surround the first electrode body 226 and the second electrode body 228. The side plates 220 may be configured to extend cylindrically from the front panel 216 toward the back panel 218. The front panel 216, the back panel 218, and the side plates 220 may form a frame for housing the electrode assembly 210. The front panel 216, the back panel 218, and the side plates 220 may be grounded and have a ground potential.

[0242] Figure 22 This is a plan view showing the schematic configuration of the current measuring device 214 according to the second embodiment. The current measuring device 214 includes multiple current measuring devices 214a, 214b, and 214c. The multiple current measuring devices 214a to 214c are configured to measure the beam current value by detecting the ion beam passing through the corresponding emission openings 206a to 206c. Figure 21 In the image, the positions of multiple ejection openings 206a to 206c are shown by dashed lines.

[0243] The current measuring device 214 may include a first current measuring device 214a, a second current measuring device 214b, and a third current measuring device 214c. The first current measuring device 214a detects the ion beam emitted from the first emission opening 206a to measure the first beam current value. The second current measuring device 214b detects the ion beam emitted from the second emission opening 206b to measure the second beam current value. The third current measuring device 214c detects the ion beam emitted from the third emission opening 206c to measure the third beam current value.

[0244] The multiple current measuring devices 214a to 214c can each be configured in the same way as the current measuring device 114 in the first embodiment described above. The multiple current measuring devices 214a to 214c can each include a Faraday cup, a galvanometer 236a to 236c connected to the Faraday cup, a suppression electrode having openings 242a, 242b, 242c, and a suppression power supply connected to the suppression electrode.

[0245] The angle measuring device 200 may further include a measuring control device 244 (see reference). Figure 21 The measurement control device 244 includes a processor 244a and a memory 244b. The measurement control device 244 can be configured similarly to the measurement control device 144 of the first embodiment described above. The measurement control device 244 outputs a command value for applying a variable voltage to the electrode assembly 210, causing the potential difference ΔV between the two opposing electrode surfaces to change over time.

[0246] The measurement control device 244 acquires beam current values ​​measured by multiple current measuring devices 214a to 214c, and uses the acquired beam current values ​​to calculate angle information. For example, the measurement control device 244 can add together the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3 measured for a specific potential difference ΔVi, and use the summed beam current value Ii (=Ii1+Ii2+Ii3) to calculate the intensity of the angular component. By converting the potential difference ΔVi into an angle θpi in the p-direction, the measurement control device 244 can obtain the beam current value Ii corresponding to the angle θpi. Thus, angle information in the p-direction, which is tilted relative to the scanning direction (y-direction), can be obtained.

[0247] Alternatively, in the second embodiment, the current measuring device 214 can be composed of only a single current measuring device instead of having multiple current measuring devices 214a to 214c. In this case, the current measuring device 214 can be equipped with a single Faraday cup for detecting the sum of multiple ion beams emitted from the multiple emission openings 206a to 206c. That is, the single Faraday cup is configured to detect the ion beam group formed by combining all the ion beams emitted from the first emission opening 206a, the second emission opening 206b, and the third emission opening 206c. In this case, the sum of the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3 can be measured using a single Faraday cup (=Ii1+Ii2+Ii3).

[0248] According to this embodiment, when multiple incident openings 202a to 202c and multiple ejection openings 206a to 206c are provided, the configuration of the electrode assembly can be simplified by using an electrode body that integrates multiple electrode surfaces with the same applied voltage.

[0249] Figure 23 This is a cross-sectional view showing the schematic configuration of the electrode assembly 210A in the modified example. (As described above) Figure 21 Similarly, the electrode assembly 210A shown has a first electrode surface 222a, a second electrode surface 224a, a third electrode surface 224b, a fourth electrode surface 222b, a fifth electrode surface 222c, and a sixth electrode surface 224c.

[0250] Electrode assembly 210A includes a first electrode body 226A, a second electrode body 228, and a third electrode body 230. The first electrode body 226A has a first electrode surface 222a. The second electrode body 228 has a second electrode surface 224a, a third electrode surface 224b, and a sixth electrode surface 224c. The third electrode body 230 has a fourth electrode surface 222b and a fifth electrode surface 222c. A first power supply 130 is connected to the first electrode body 226A and the third electrode body 230. A second power supply 132 is connected to the second electrode body 228.

[0251] Even when using the electrode assembly 210A of this modified example, the same effect as described in the second embodiment can be achieved.

[0252] (Third implementation) Figure 24This is a plan view showing the schematic configuration of the incident surface 304 of the angle measuring device 300 according to the third embodiment. The angle measuring device 300 of the third embodiment is configured to measure angle information in the scanning direction (y-direction) of the scanning beam SB and angle information in the direction orthogonal to the scanning direction (x-direction) of the scanning beam SB. Hereinafter, the angle measuring device 300 of the third embodiment will be described focusing on the differences from the above embodiments, and the description of the common points will be omitted as appropriate.

[0253] Figure 24 This diagram shows an incident surface 304 having multiple incident openings 302a to 302d, viewed from the upstream side in the beam travel direction (z-direction). Multiple incident openings 302a, 302b, 302c, and 302d are formed on the incident surface 304. The first incident opening 302a, the second incident opening 302b, and the third incident opening 302c can be configured similarly to the multiple incident openings 202a to 202c in the second embodiment described above. The slit width direction of the first incident opening 302a, the second incident opening 302b, and the third incident opening 302c is in the p-direction, which is inclined relative to the scanning direction (y-direction). The fourth incident opening 302d is disposed within the measurement range D in which the first incident opening 302a, the second incident opening 302b, and the third incident opening 302c are formed, and is disposed at a position away from the first incident opening 302a, the second incident opening 302b, and the third incident opening 302c in the scanning direction (y direction). The slit width direction of the fourth incident opening 302d is parallel to the scanning direction (y direction). The opening width w2d of the fourth incident opening 302d in the slit length direction is, for example, consistent with the measurement range D. The opening widths w1a, w1b, w1c, and w1d in the slit width direction of the plurality of incident openings 302a, 302b, 302c, and 302d are the same as each other. The plurality of incident openings 302a to 302d are formed to penetrate the front panel 316 having the incident surface 304.

[0254] Figure 25 This is a plan view showing the approximate configuration of the ejection surface 308 of the angle measuring device 300 in the third embodiment. Figure 25This diagram shows the incident surface 204 having multiple exit openings 306a to 306d, viewed from the downstream side in the beam travel direction (z-direction). Multiple exit openings 306a to 306d are formed on the exit surface 308. The multiple exit openings 306a to 306d can have the same shape and size as the corresponding incident openings 302a to 302d. The multiple exit openings 306a to 306d are configured such that their positions in the x and y directions, orthogonal to the travel direction of the scanning beam SB, coincide with those of the corresponding incident openings 302a to 302d. The opening widths w3a, w3b, w3c, and w3d in the slit width direction of the multiple exit openings 306a to 306d can be the same as the opening widths w1a to w1d in the slit width direction of the corresponding incident openings 302a to 302d. The opening widths w4a, w4b, and w4c of the multiple exit openings 306a to 306d along the slit length direction can be the same as the opening widths w2a to w2d of the corresponding entrance openings 302a to 302d along the slit length direction.

[0255] Figure 26 This is a cross-sectional view showing the schematic configuration of the electrode assembly 310 according to the third embodiment. The electrode assembly 310 is disposed between the incident surface 304 and the ejection surface 308. Figure 26 In the image, the positions of multiple incident openings 302a to 302d are shown by dashed lines.

[0256] The electrode assembly 310 has a first electrode surface 322a, a second electrode surface 324a, a third electrode surface 324b, a fourth electrode surface 322b, a fifth electrode surface 322c, a sixth electrode surface 324c, a seventh electrode surface 324d, and an eighth electrode surface 322d. The first electrode surface 322a to the sixth electrode surface 324c can be coupled with the aforementioned... Figure 21 The first electrode surfaces 222a to the sixth electrode surfaces 224c shown are similarly configured. The seventh electrode surface 324d and the eighth electrode surface 322d are oriented opposite each other in a fourth direction at a fourth distance d4, separated by an ion beam traveling from the fourth incident opening 302d toward the fourth exit opening 306d. This fourth direction is parallel to the slit width direction (y-direction) of the fourth incident opening 302d. Figure 26 In the example shown, the fourth direction is inclined relative to the first, second, and third directions. The fourth distance d4 is the same as the first distance d1, the second distance d2, and the third distance d3.

[0257] A power supply 112 is connected to the electrode assembly 310. The power supply 112 is configured in the same manner as in the embodiment described above. The power supply 112 causes a potential difference to be generated between two opposing electrode surfaces. The power supply 112 causes a first potential difference to be generated between the first electrode surface 322a and the second electrode surface 324a, a second potential difference to be generated between the third electrode surface 324b and the fourth electrode surface 322b, a third potential difference to be generated between the fifth electrode surface 322c and the sixth electrode surface 324c, and a fourth potential difference to be generated between the seventh electrode surface 324d and the eighth electrode surface 322d.

[0258] Electrode assembly 310 includes a first electrode body 326, a second electrode body 328, and a third electrode body 330. The first electrode body 326 has a first electrode surface 322a, a fourth electrode surface 322b, and a fifth electrode surface 322c. The second electrode body 328 has a second electrode surface 324a, a third electrode surface 324b, a sixth electrode surface 324c, and a seventh electrode surface 324d. The third electrode body 330 has an eighth electrode surface 322d. The first electrode body 326 and the third electrode body 330 are connected to a first power supply 130, and the second electrode body 328 is connected to a second power supply 132. At this time, the magnitudes of the first potential difference, the second potential difference, the third potential difference, and the fourth potential difference are the same. However, the directions of the electric field generated between the two opposing electrode surfaces may be different. The direction of the first electric field Ea based on the first potential difference between the first electrode surface 322a and the second electrode surface 324a is the same as the direction of the third electric field Ec based on the third potential difference between the fifth electrode surface 322c and the sixth electrode surface 324c, but opposite to (or antiparallel to) the direction of the second electric field Eb based on the second potential difference between the third electrode surface 324b and the fourth electrode surface 322b. The direction of the fourth electric field Ed based on the fourth potential difference between the seventh electrode surface 324d and the eighth electrode surface 322d is inclined relative to the directions of the first electric field Ea, the second electric field Eb, and the third electric field Ec.

[0259] Side plates 320 may be provided around the electrode assembly 310 to surround the first electrode body 326, the second electrode body 328, and the third electrode body 330. The side plates 320 may be configured to extend cylindrically from the front panel 316 toward the back panel 318. The front panel 316, the back panel 318, and the side plates 320 may form a frame for housing the electrode assembly 310. The front panel 316, the back panel 318, and the side plates 320 may be grounded and have a ground potential.

[0260] Figure 27This is a plan view showing the schematic configuration of the current measuring device 314 according to the third embodiment. The current measuring device 314 includes multiple current measuring devices 314a, 314b, 314c, and 314d. The multiple current measuring devices 314a to 314d are configured to measure the beam current value by detecting the ion beam passing through the corresponding emission openings 306a to 306d. Figure 27 In the image, the positions of multiple ejection openings 306a to 306d are shown by dashed lines.

[0261] The current measuring device 314 may include a first current measuring device 314a, a second current measuring device 314b, a third current measuring device 314c, and a fourth current measuring device 314d. The first current measuring device 314a detects the ion beam emitted from the first emission opening 306a to measure the first beam current value. The second current measuring device 314b detects the ion beam emitted from the second emission opening 306b to measure the second beam current value. The third current measuring device 314c detects the ion beam emitted from the third emission opening 306c to measure the third beam current value. The fourth current measuring device 314d detects the ion beam emitted from the fourth emission opening 306d to measure the fourth beam current value.

[0262] The multiple current measuring devices 314a to 314d can each be configured in the same way as the current measuring device 114 in the first embodiment described above. The multiple current measuring devices 314a to 314d can each include a Faraday cup, a galvanometer connected to the Faraday cup, a suppression electrode having openings 342a, 342b, 342c, 342d, and a suppression power supply connected to the suppression electrode.

[0263] The angle measuring device 300 may further include a measuring control device 344 (see reference). Figure 26 The measurement control device 344 includes a processor 344a and a memory 344b. The measurement control device 344 can be configured similarly to the measurement control device 144 of the first embodiment described above. The measurement control device 344 outputs a command value for applying a variable voltage to the electrode assembly 310, causing the potential difference ΔV between two opposing electrode surfaces to change over time.

[0264] The measurement control device 344 acquires beam current values ​​measured by multiple current measuring devices 314a to 314d, and uses the acquired beam current values ​​to calculate angle information. For example, the measurement control device 344 adds together the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3 measured for a specific potential difference ΔVi, and uses the summed beam current value Ii (=Ii1+Ii2+Ii3) to calculate the intensity of the angular component in the p-direction. The measurement control device 344 can obtain the beam current value Ii at angle θpi by converting the potential difference ΔVi into an angle θpi in the p-direction. Thus, angle information in the p-direction, which is tilted relative to the scanning direction (y-direction), can be obtained.

[0265] The measurement control device 344 acquires a fourth beam current value Ii4 measured for a specific potential difference ΔVi, and uses the fourth beam current value Ii4 to calculate the intensity of the angular component in the y-direction. By converting the potential difference ΔVi into an angle θyi, the measurement control device 344 can obtain the beam current value Ii4 at angle θyi. Thus, angular information in the scanning direction (y-direction) can be obtained.

[0266] The measurement control device 344 uses angle information in the scanning direction (y-direction) and angle information in the p-direction (tilted relative to the scanning direction (y-direction)) to calculate angle information in the direction orthogonal to the scanning direction (x-direction). For example, a well-known method described in Japanese Patent Application Publication No. 2019-169407 can be used to calculate the angle information in the direction orthogonal to the scanning direction (x-direction).

[0267] In addition, in the third embodiment, a single current measuring device 314 can be used instead of the first current measuring devices 314a to 314c. In this case, the current measuring device 314 may include: a first current measuring device that measures the current value of a first beam by adding together multiple ion beams emitted from the first emission opening 306a to the third emission opening 306c; and a second current measuring device that measures the current value of a second beam by detecting the ion beam emitted from the fourth emission opening 306d. The first current measuring device is configured to detect an ion beam group formed by combining all the ion beams emitted from the first emission opening 306a, the second emission opening 306b, and the third emission opening 306c. At this time, the first current measuring device can be used to measure the sum of the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3, Ii (=Ii1+Ii2+Ii3).

[0268] Figure 28 This is a cross-sectional view showing the schematic configuration of the electrode assembly 310A in a modified example. (As described above) Figure 26 Similarly, the electrode assembly 310A shown has a first electrode surface 322a, a second electrode surface 324a, a third electrode surface 324b, a fourth electrode surface 322b, a fifth electrode surface 322c, a sixth electrode surface 324c, a seventh electrode surface 324d, and an eighth electrode surface 322d.

[0269] The electrode assembly 310A includes: a first electrode body 326A having a first electrode surface 322a; a second electrode body 328A having a second electrode surface 324a and a third electrode surface 324b; a third electrode body 330A having a fourth electrode surface 322b and a fifth electrode surface 322c; a fourth electrode body 332 having a sixth electrode surface 324c; a fifth electrode body 334 having a seventh electrode surface 324d; and a sixth electrode body 336 having an eighth electrode surface 322d. The first electrode body 326A, the third electrode body 330A, and the sixth electrode body 336 are coupled with a first power supply 130. The second electrode body 328A, the fourth electrode body 332, and the fifth electrode body 334 are coupled with a second power supply 132. Alternatively, the power supplies connected to the 5th electrode 334 and the 6th electrode 336 can be interchanged, or the 1st power supply 130 can be connected to the 5th electrode 334, and the 2nd power supply 132 can be connected to the 6th electrode 336.

[0270] The electrode assembly 310A further includes a seventh electrode 338. The seventh electrode 338 is disposed between the electrode group including the first electrode 326A, the second electrode 328A, the third electrode 330A, and the fourth electrode 332 and the fifth electrode 334. The seventh electrode 338 is grounded and has a ground potential.

[0271] Even when using the electrode assembly 310A of this modified example, the same effect as the third embodiment described above can be achieved.

[0272] Next, the ion extraction device for generating the ion beam will be described. Figure 29 This is a schematic diagram of the ion extraction device according to the first embodiment. The ion extraction device includes: an ion source 20 that generates plasma containing target ions; and an extraction unit 22 that extracts a group of ions containing target ions from the ion source 20 or an arc chamber 20a to generate an ion beam IB.

[0273] Such as about Figure 1 As described above, the extraction section 22, located downstream of the ion source 20, extracts an ion cluster from the internal space 20b of the ion source 20 through the front slit 20c to generate an ion beam IB. Hereinafter, the opening of the front slit 20c, which extracts the ion cluster containing the target ions constituting the ion beam IB, will be referred to as the first opening OP1. (Regarding...) Figure 1As described above, the first opening OP1 of the front slit 20c has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the first opening OP1 in the horizontal direction is greater than the opening width of the first opening OP1 in the vertical direction.

[0274] The extraction section 22 extends from downstream to upstream of the ion beam IB in the direction of travel (in Figure 29 (From right to left) It has a reference electrode 22b, a suppression electrode 22a and a movable conductor 22e.

[0275] exist Figure 1 The reference electrode 22b, referred to as the second lead-out electrode 22b in the figure, has a second opening OP2 for the ion beam IB to pass through, and is subjected to a ground potential V. gnd Equivalent reference potential. For ease of explanation, the following assumes a ground potential V. gnd Or the reference potential is zero (0). For ease of explanation, a reference potential V is used instead of such a reference potential. gnd A potential higher than 0 is represented as a positive potential. For ease of explanation, a reference potential V is used instead. gnd A low potential (=0) is represented as a negative potential. Figure 1 The second opening OP2, represented as the second outlet opening 22d, has the same slit shape as the front slit 20c, with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the second opening OP2 in the horizontal direction is greater than the opening width of the second opening OP2 in the vertical direction.

[0276] exist Figure 1 The suppression electrode 22a, denoted as the first extraction electrode 22a in the figure, has a third opening OP3 through which the ion beam IB passes, and is subjected to a potential V relative to the reference voltage. gnd Low negative inhibition potential V sup .exist Figure 1 The third opening OP3, represented as the first lead-out opening 22c, has a slit shape similar to the front slit 20c, with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the third opening OP3 in the horizontal direction is greater than the opening width of the third opening OP3 in the vertical direction. The suppression electrode 22a is disposed between the movable conductor 22e (described later) on the upstream side and the reference electrode 22b on the downstream side.

[0277] Additionally, a reference potential V is applied to the front slit 20c and / or the arc chamber 20a of the ion source 20. gnd High positive lead-out potential V ext .

[0278] The movable conductor 22e is positioned between the upstream front slit 20c and the downstream suppression electrode 22a. The movable conductor 22e has a fourth opening OP4 through which the ion beam IB passes. Like the front slit 20c, the fourth opening OP4 has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the horizontal opening width of the fourth opening OP4 is greater than its vertical opening width. Preferably, the size of the fourth opening OP4 is larger than the size of the first opening OP1.

[0279] In the example shown, a positive lead-out potential V is applied to the movable conductor 22e. ext With zero reference potential V gnd The positive potential between them is the control potential V. ctl Control potential V ctl It can be achieved by connecting to the extraction potential V ext Additional potential V connected in series in opposite directions add To achieve this. Specifically, an additional potential V is added. add The absolute value is less than the lead-in potential V. ext The absolute value of the control potential V ctl Represented as "V" ext -V add (>0). Additionally, the movable conductor 22e can also be configured to be at the reference potential V. gnd Extracted potential V ext Additional potential V add Suppression potential V sup Specific potential insulation, such as a constant potential not shown. Alternatively, the movable conductor 22e can be made conductive with the front slit 20c by passing a conductor through it, thus applying the same positive extraction potential V to the movable conductor 22e as to the front slit 20c (ion source 20). ext (For example, in) Figure 29 In the middle, an additional potential V will be added. add Set to zero).

[0280] The first opening OP1 of the front slit 20c, the second opening OP2 of the reference electrode 22b, the third opening OP3 of the suppression electrode 22a, and the fourth opening OP4 of the movable conductor 22e are slits that are long in the same x1 direction (in Figure 29 The diagram schematically shows the slits in the y-direction, which is the short-dimensional direction. The ion beam IB drawn from the ion source 20 through such an extraction section 22 passes sequentially through the first opening OP1 of the front slit 20c, the fourth opening OP4 of the movable conductor 22e, the third opening OP3 of the suppression electrode 22a, and the second opening OP2 of the reference electrode 22b.

[0281] The two downstream electrodes in the extraction section 22, namely the suppression electrode 22a and the reference electrode 22b, can also be configured as a single electrode unit. In this case, the travel direction of the ion beam IB ( Figure 29 The distance between the suppression electrode 22a and the reference electrode 22b in the z1 direction is constant or unchanging. In other words, the center-to-center distance between the third opening OP3 of the suppression electrode 22a and the second opening OP2 of the reference electrode 22b along the direction of travel is constant or unchanging.

[0282] On the other hand, the electrode unit, which is integrally formed by the suppression electrode 22a and the reference electrode 22b, can be movably disposed relative to the ion source 20 along the travel direction of the ion beam IB. In the example shown, the distance between the ion source 20 (strictly speaking, the front slit 20c) and the electrode unit (strictly speaking, the suppression electrode 22a) along the travel direction is represented as the sum of the first distance Gap1 and the second distance Gap2, which will be described later. As will be described later, in this embodiment, the first distance Gap1 between the front slit 20c and the movable conductor 22e in the travel direction is variable, but by moving the electrode unit along the travel direction, the second distance Gap2 between the movable conductor 22e and the suppression electrode 22a in the travel direction is also variable.

[0283] The first distance Gap1 between the movable conductor 22e (and / or its fourth opening OP4) and the ion beam IB in the direction of travel of the front slit 20c (and / or its first opening OP1) is variable. Figure 30 As schematically shown, the movable conductor 22e can also be connected to the ion source 20 and / or the front slit 20c via a telescopic mechanism 22f capable of extending and retracting along the direction of travel. Depending on the extension and retraction of the telescopic mechanism 22f, the first distance Gap1 between the front slit 20c (first opening OP1) and the movable conductor 22e (fourth opening OP4) increases or decreases.

[0284] The telescopic mechanism 22f is made of insulating material, and preferably has insulating properties. At this time, as regarding... Figure 29 The movable conductor 22e is capable of being subjected to an extraction potential V related to the ion source 20 (front slit 20c). ext Different control potentials V ctl (i.e., V) ext -V add Additionally, in Figure 30 In the example, an additional potential V is set. add A diode D connected in series in the same direction, and an additional potential V add The feedback resistor R is connected in parallel. On the other hand, the telescopic mechanism 22f can be made of a conductive material and possesses conductivity. At this time, the same extraction potential V as that of the ion source 20 (front slit 20c) is applied to the movable conductor 22e. ext (No additional potential V set)add (Diode D, feedback resistor R).

[0285] The ion extraction device of this embodiment, configured as described above, can appropriately control the manner in which the ion group constituting the ion beam IB is extracted from the ion source 20 using various parameters. As an example of a parameter that the ion extraction device can control, the reference potential V... gnd (Traditionally constant), suppression potential V sup Extracted potential V ext Control potential V ctl (or add potential V) add The equipotential parameter group, and the distance parameter group such as the first distance Gap1 between the front slit 20c and the movable conductor 22e, the second distance Gap2 between the movable conductor 22e and the suppression electrode 22a, and the distance Gap2′ between the front slit 20c and the suppression electrode 22a.

[0286] As described above, the reference potential V can be... gnd Suppression potential V sup Extracted potential V ext Control potential V ctl While variable or adaptive control is applied to each potential parameter, in the following embodiments, where the potential parameters are substantially fixed, variable or adaptive control is primarily applied to two distance parameters, Gap1 and Gap2. The values ​​of each potential parameter can be arbitrarily set, but for example, the reference potential V... gnd The value is "0V", indicating a suppression potential of V. sup The value is "-2kV", and the potential V is drawn out. ext The value is "+40kV", and the control potential V ctl The value is "+30kV".

[0287] To clarify the significance of the variable control of the two distance parameters Gap1 and Gap2 in this embodiment, refer to... Figure 31 A comparative example of variable control accompanied by a distance parameter Gap2′ will be explained. This comparative example, except for the lack of a movable conductor 22e, is similar to... Figure 29 or Figure 30 The illustrated embodiments are substantially the same. That is, Figure 29 or Figure 30 The illustrated embodiment has four electrodes or conductors 20c, 22e, 22a, and 22b. In contrast, Figure 31 The comparative example shown has three electrodes 20c, 22a, and 22b. (Compared to...) Figure 29 or Figure 30 Similarly, in the illustrated embodiment, a voltage of +40kV (lead-out potential V) was applied to each of the electrodes 20c, 22a, and 22b. ext "-2kV" (suppression potential V) sup"0V" (reference potential V) gnd Isopotential lines are schematically shown between electrodes 20c, 22a, and 22b.

[0288] Figure 31 In the left-hand diagram of (a), the slit shapes of electrodes 20c, 22a, and 22b are shown in the short-side direction (y-direction), specifically the first opening OP1, the third opening OP3, and the second opening OP2. Figure 31 In the left-hand diagram of (b), the first opening OP1, the third opening OP3, and the second opening OP2 of the slit shapes of each electrode 20c, 22a, and 22b are shown in the long-side direction (x1 direction). In this comparative example, only the distance Gap2′ between the front slit 20c and the suppression electrode 22a along the travel direction (z1 direction) of the ion beam IB is substantially variable.

[0289] Figure 31 The right side of (a) shows a two-dimensional plot of the position y of the short side (y direction) of the ion beam IB and its tilt angle y′ relative to the travel direction (z1 direction) at the observation position shown in the left side diagram (the predetermined z1 direction position between the reference electrode 22b and the defined aperture 24g of the inlet of the mass spectrometry analysis magnet device 24a). Figure 31 The right-hand plot of (b) shows a two-dimensional plot of the position x1 of the ion beam IB along its long side (x1 direction) and its tilt angle x1′ relative to the direction of travel at the observation position shown in the left-hand plot. This two-dimensional distribution of the position (y or x1) and tilt angle (y′ or x1′) of the ion beam IB represents the phase space distribution of the ion beam IB. That is, Figure 31 The right-hand side of (a) shows the phase space distribution of the ion beam IB in the y-direction (short side direction). Figure 31 The right side of (b) shows the phase space distribution of the ion beam IB in the x1 direction (long side direction).

[0290] In the phase spatial distribution in each direction, the plot based on black circles represents the measured data at the observation location, and the plot based on white circles represents the ideal data. In the short side direction... Figure 31 From (a), it can be seen that the measured phase space distribution extends relative to the ideal phase space distribution in both the y and y′ directions. In the long side direction... Figure 31 In (b), it can be seen that the measured phase space distribution is deformed into an S-shape relative to the ideal phase space distribution which is roughly straight along the x1′ axis (horizontal axis). Figure 31 Undesirable expansion of the phase space distribution in (a) and Figure 31The phase spatial distribution in (b) is deformed into an S-shape, which can be reduced by increasing the distance Gap2′ (i.e., by moving the suppression electrode 22a away from the front slit 20c). However, there is an upper limit to the distance Gap2′ in the device configuration, in practice... Figure 31 The measured data were obtained at the maximum distance Gap2′ in the current device. Although it is possible to increase the maximum value of distance Gap2′, it would lead to an undesirable increase in the size of the ion extraction device and, consequently, the ion implantation device 10.

[0291] like Figure 31 The undesirable phase spatial distribution is shown, especially in the extraction current I of the ion beam IB. ext It is more likely to occur in small situations. For example, it is believed that in Figure 31 The first opening OP1 of the front slit 20c in (a) is greatly deformed close to the rear isopotential line, and the ion beam IB becomes over-converged locally, which is one reason for the undesirable phase space distribution.

[0292] According to the movable conductor 22e of this embodiment, the above-mentioned lead-out current I can be mitigated. ext Over-focusing and subsequent divergence of ion beam IB under low current conditions can achieve, for example... Figure 31 The desired phase space distribution is plotted based on white circles. Figure 32 (a) shows in relation to Figure 31 In comparative example (a) where no movable conductor 22e is provided, the ion beam IB exhibits both convergence and divergence. The extraction current I in this figure... ext This is a relatively low "1mA". In contrast, Figure 32 (b) shows the output current I ext Under the same "1mA" condition, the movable conductor 22e mitigates the over-convergence and divergence of the ion beam IB. In this example, the telescopic mechanism 22f is made of a conductor (e.g., graphite, tungsten, molybdenum), so the movable conductor 22e and the front slit 20c have the same potential (lead-out potential V). ext ).

[0293] exist Figure 32 In (b), the ion beam IB also converges downstream of the first opening OP1 of the front slit 20c, but its position is near the fourth opening OP4 of the movable conductor 22e, and... Figure 32 (a) is further away from the first opening OP1 on the downstream side. Furthermore, in Figure 32 In (b), the convergence of the ion beam IB is also greater than that in [the following context]. Figure 32 (a) has eased significantly. As a result, in Figure 32 In (b), even under low current conditions such as "1 mA", the desired phase spatial distribution of the ion beam IB can be achieved. Furthermore, in Figure 32 (a) and Figure 32 In (b), the distance between the front slit 20c and the suppression electrode 22a is substantially the same. Thus, according to... Figure 32 The embodiment of (b) is similar to Figure 32 Compared to the comparative example (a), the desired phase spatial distribution of the ion beam IB can be achieved without increasing the distance between the front slit 20c and the suppression electrode 22a (i.e., without causing the device to become larger).

[0294] As described above, even if the movable conductor 22e is not subjected to the lead-out potential V ext Different control potentials V ctl (i.e., V) ext -V add By simply configuring it on the downstream side of the front slit 20c, it is possible to adjust the phase spatial distribution or divergence of the ion beam IB. This effect can be achieved by adjusting the extraction current I. ext The distance (Gap1) between the front slit 20c and the movable conductor 22e is optimized by adjusting conditions such as [conditions to be specified]. Furthermore, an arbitrary control potential V can be applied to the movable conductor 22e. ctl In this case, based on the extracted current I ext Adjust the control potential V according to the conditions. ctl And / or the first distance Gap1, thereby enabling the realization of an ion beam IB with the most appropriate phase spatial distribution or divergence. Thus, in the ion extraction device of this embodiment, an extraction potential V can be applied to the movable conductor 22e. ext With reference potential V gnd The control potential V between the potentials ctl This is to control the phase spatial distribution of the ion beam IB emitted from the second opening OP2.

[0295] Figure 33 Indicates the lead-out current I ext Compare Figure 32 (b) The larger state. Specifically, Figure 33 (a) represents the lead-out current I. ext It is in the "2mA" state. Figure 33 (b) represents the extracted current I. ext It is in the "4mA" state. As per the lead-in current I... ext For "1mA" Figure 32 (b) Lead-out current I ext For "2mA" Figure 33 (a) Lead-out current I ext For "4mA" Figure 33 (b) Generally speaking, with the lead-out current I extThe distance Gap1 between the front slit 20c and the movable conductor 22e is adjusted to be smaller by increasing the size of the distance, thereby enabling the adjustment of the first distance Gap1 between the front slit 20c and the movable conductor 22e to the applied lead-out current I. ext The conditions optimize the phase spatial distribution or divergence of the ion beam IB. Additionally, in Figure 33 In (b), the first distance Gap1 is zero, and the front slit 20c and the movable conductor 22e are in close contact with each other, essentially becoming an electrode or conductor.

[0296] As described above, in the ion extraction apparatus of this embodiment, the first distance Gap1 between the first opening OP1 and the fourth opening OP4 is controlled in such a way that the desired phase spatial distribution is achieved when the ion beam IB irradiates the wafer.

[0297] Figure 34 Showing the output current I ext The first control example corresponding to the first distance gap1 and the second distance gap2. Figure 34 (a) represents the input current I. ext The corresponding total distance between the anterior slit 20c and the suppression electrode 22a (e.g.) Figure 29 or Figure 30 As shown, strictly speaking, the thickness of the movable conductor 22e must also be considered, but for ease of explanation, it is represented as the control method of the sum of the first distance Gap1 and the second distance Gap2 ("Gap1+Gap2"). Figure 34 (b) represents the output current I. ext The corresponding control method for the first distance Gap1 between the front slit 20c and the movable conductor 22e.

[0298] Such as about Figure 32 and Figure 33 As mentioned above, to draw out current I ext The smaller the gap, the larger the first distance Gap1. Therefore, for the first distance Gap1, the lead-in current I is controlled accordingly. ext The control is implemented in a way that the minimum value, i.e., "0", becomes the maximum value G0. Subsequently, the current I is drawn... ext The critical value I is reached (described later) th During the period up to this point, the total distance “Gap1+Gap2” remains a constant value G. c This means that the suppression electrode 22a is fixed relative to the front slit 20c. When the lead-out current I... ext Increasing from "0" to the critical value current I th The period up to that point, such as regarding Figure 32 and Figure 33 The optimal ion beam IB can be achieved by gradually reducing the first distance Gap1.

[0299] Critical current Ith For a constant total distance G c The optimal first distance Gap1 becomes the "0" extraction current I ext At this time, as Figure 33 As shown in (b), the front slit 20c is in close contact with the movable conductor 22e. When the lead-out current I... ext Current I greater than the critical value th In the region where the first distance Gap1 cannot be less than "0", the second distance Gap2 is gradually reduced while the first distance Gap1 is "0". As a result, the extracted current I... ext Current I greater than the critical value th In the region, the total distance "Gap1 (=0) + Gap2" is from the constant value G c Gradually decrease. As mentioned above, in Figure 34 In the example, for the critical current I th The following lead-out current I ext Adaptive control is applied to the first distance Gap1, targeting the critical current I. th The above lead-out current I ext Adaptive control is applied to the second distance Gap2. Therefore, for a wide range of extraction currents I... ext It can achieve ion beams (IBs) with appropriate phase spatial distribution or divergence.

[0300] Figure 35 Showing the output current I ext The corresponding second control example is the first distance gap 1 and the second distance gap 2. Figure 35 (a) represents the input current I. ext The corresponding total distance between the anterior slit 20c and the suppression electrode 22a (e.g.) Figure 29 or Figure 30 As shown, strictly speaking, the thickness of the movable conductor 22e must also be considered, but for ease of explanation, it is represented as the control method of the sum of the first distance Gap1 and the second distance Gap2 ("Gap1+Gap2"). Figure 35 (b) represents the output current I. ext The corresponding control method for the first distance Gap1 between the front slit 20c and the movable conductor 22e.

[0301] like Figure 34 As shown in (b), relative to the first control example that can continuously control the first distance Gap1, in Figure 35 In the second control example shown in (b), the first distance Gap1 is controlled in stages or discontinuously. For example, in the lead-out current I... extBetween "0" and the first current I1, the first distance Gap1 is fixed at the first value G1, and the lead-out current I... ext Between the first current I1 and the second current I2, the first distance Gap1 is fixed to a second value G2 that is less than the first value G1, and the lead-out current I... ext The second current I2 and the critical current I th Between these values, the first distance Gap1 is fixed to a third value G3, which is less than the second value G2. Similarly to the first control example, in the lead-out current I... ext The critical current I th In this case, the first distance Gap1 is fixed as "0".

[0302] Compared to the first distance gap1, which is controlled in stages, the second distance gap2 is controlled continuously. Specifically, the second distance gap2 is controlled at the point where the lead-in current I... ext When the value is the minimum near "0", it is controlled to be the maximum or extreme value. At this point, the total distance "Gap1 + Gap2" takes the maximum value G. max Later, when drawing out the current I... ext During the period up to the first current I1, the second distance Gap2 and the total distance "Gap1 (= G1) + Gap2" are gradually reduced. If the drawn current I... ext When the first current I1 is reached, the total distance “Gap1 (= G1) + Gap2” becomes the minimum or minimum value.

[0303] Furthermore, if the current I is drawn out ext Upon reaching the first current I1, as described above, the first distance Gap1 decreases to the second value G2. On the other hand, the second distance Gap2 is increased to its maximum or extreme value. At this point, the total distance "Gap1 + Gap2" again reaches its maximum value G. max Later, when drawing out the current I... ext During the period up to the second current I2, the second distance Gap2 and the total distance "Gap1 (=G2) + Gap2" are gradually reduced. If the drawn current I... ext When the second current I2 is reached, the total distance “Gap1 (= G2) + Gap2” becomes the minimum or minimum value.

[0304] Furthermore, if the current I is drawn out ext Upon reaching the second current I2, as described above, the first distance Gap1 decreases to the third value G3. On the other hand, the second distance Gap2 is increased to its maximum or extreme value. At this point, the total distance "Gap1 + Gap2" again reaches its maximum value G. max Later, when drawing out the current I... ext The critical current I is reached thDuring the period up to this point, the second distance Gap2 and the total distance "Gap1 (=G3) + Gap2" are gradually reduced. If the current I is drawn... ext The critical current I is reached th Then the total distance “Gap1 (= G3) + Gap2” becomes the minimum or minimum value.

[0305] Furthermore, if the current I is drawn out ext The critical current I is reached th As mentioned above, the first distance Gap1 decreases to its minimum value of "0". On the other hand, the second distance Gap2 is increased to its maximum value or extreme value. At this time, the total distance "Gap1 + Gap2" again reaches its maximum value G. max Later, if a current I is drawn... ext From the critical current I th If the distance increases, the second distance Gap2 and the total distance "Gap1 (=0) + Gap2" are gradually reduced. As a result, the output current I... ext Current I greater than the critical value th In the region, the total distance "Gap1 (=0) + Gap2" is from the maximum value G max Gradually decrease. As mentioned above, in Figure 35 In the example, for the critical current I th The following lead-out current I ext Adaptive control is applied in stages for the first distance gap1 and continuously for the second distance gap2, targeting the critical current I. th The above lead-out current I ext The second distance Gap2 is continuously adaptively controlled. Therefore, for a wide range of extraction currents I... ext It can achieve ion beams (IBs) with appropriate phase spatial distribution or divergence.

[0306] Next, refer to Figure 29 Examples of setting various parameters in the ion extraction device of this embodiment will be described. However, the method of setting each parameter is arbitrary and is not limited to the method illustrated below.

[0307] As the first step, set the extraction potential V. ext (In the example above, this is "+40kV") and the suppression potential V sup (In the example above, it is "-2kV"), to obtain an ion beam IB with the desired energy.

[0308] As a second step, various device parameters reflecting the state of the ion source 20 are set to obtain the desired extraction current I. extHere, as device parameters, examples can be given of the gas type, gas flow rate, evaporator temperature, and arc current I set as parameters of the ion source 20. arc The parameters selected in step 2 include at least one of the following: arc voltage, source magnetic current, the total charge carried by the ion cluster containing target ions extracted from ion source 20 per unit time (i.e., effective extraction current), and the beam current of the ion beam IB irradiating the wafer. Thus, at least one of the various device parameters set in step 2 can be acquired by the ion source state acquisition unit 401. Furthermore, the effective extraction current is also considered as the extraction potential V applied to ion source 20. ext With the control potential V applied to the movable conductor 22e ctl Additional potential V of the potential difference add It can be obtained by the electronic information acquisition unit 402.

[0309] As a third step, the additional potential V is adjusted under the device parameters set in step 2. add (That is, control potential V) ctl To obtain the desired extraction current I ext Here, the molecular weight of the ion species determined by the device parameters is set as m, and the extracted current I is used. ext With m -1 / 2 •V add 3 / 2 The relationship is roughly proportional. Thus, in the ion extraction device of this embodiment, the control potential V applied to the movable conductor 22e can be controlled based on the device parameters acquired by the ion source state acquisition unit 401. ctl Furthermore, in the ion extraction device of this embodiment, the additional potential V acquired by the electrical information acquisition unit 402 can also be used as a reference. add And effectively draw out current to control the control potential V applied to the movable conductor 22e. ctl .

[0310] As the fourth step, the phase space distribution in the x1 direction (refer to...) Figure 31 The second distance Gap2 is adjusted in such a way that the tilt angle x1′ in (b) falls within the design range of beamline A. Here, the extraction current I is used. ext With m -1 / 2 •V ext 3 / 2 •Gap2 -2 A roughly proportional relationship.

[0311] As a fifth step, the orbital axis of the ion beam IB is adjusted by modifying the position, orientation, and opening shape of the suppression electrode 22a, etc. In this adjustment, although the centroid of the phase spatial distribution changes, its shape remains unchanged.

[0312] As in step 6, as regarding Figure 34 As described in (b), the first distance Gap1 is adjusted. Thus, in the ion extraction apparatus of this embodiment, the first distance Gap1 between the first opening OP1 and the fourth opening OP4 in the travel direction of the ion beam IB can be controlled based on the state of the ion source 20 that can be acquired by the ion source state acquisition unit 401, so that the desired phase space distribution is achieved when the ion beam IB irradiates the wafer. Furthermore, in the ion extraction apparatus of this embodiment, the additional potential V acquired by the electrical information acquisition unit 402 can also be used as a reference. add And the first distance Gap1 between the first opening OP1 and the fourth opening OP4 in the direction of travel of the ion beam IB is controlled by an effective extracted current.

[0313] Furthermore, depending on the density of the plasma generated by the ion source 20, the desired ion beam IB can sometimes be obtained even without adjusting the first distance Gap1. In particular, in cases of high plasma density, for example, the first distance Gap1 can be fixed to zero (see reference). Figure 33 (b) renders the movable conductor 22e substantially ineffective. Thus, the use of the movable conductor 22e can be selected based on the density of the plasma generated by the ion source 20.

[0314] The ion extraction device of this embodiment can adaptively control the various parameters using an angle measuring device provided in the beam analyzer 46. This angle measuring device constitutes a phase space distribution measuring device that measures the phase space distribution of the ion beam IB downstream of the reference electrode 22b. The first distance Gap1 between the first opening OP1 and the fourth opening OP4 in the direction of travel of the ion beam IB and the control potential V applied to the movable conductor 22e can be controlled based on the phase space distribution of the ion beam IB measured by such a phase space distribution measuring device. ctl (That is, the additional potential V) add At least one of the following.

[0315] Figure 36 This is a schematic diagram of the ion extraction device according to the second embodiment. The ion extraction device includes: an ion source 20 that generates plasma containing target ions DI; an extraction unit 22 that extracts a group of ions containing target ions DI from the ion source 20 or an arc chamber 20a to generate a first ion beam IB1; a mass spectrometry magnet device 24a, which serves as a first beam deflection device for deflecting the first ion beam IB1 by applying a magnetic field; and a mass spectrometry slit 24b (…). Figure 1The device includes a first separation opening through which target ions DI contained in a first ion beam IB1 deflected by a mass spectrometer magnet device 24a pass; and a potential difference setting unit 403, which sets a potential difference in a first region R1, which is at least a portion of the outlet of the extraction unit 22 and the inlet of the mass spectrometer magnet device 24a, and a second region R2, which is at least a portion of the inlet and outlet of the mass spectrometer magnet device 24a. When the first ion beam IB1 passes through the mass spectrometer slit 24b, as described later, the altered ions MI decrease, becoming a second ion beam containing a large number of target ions DI. This second ion beam irradiates the wafer in the implantation processing chamber 14.

[0316] like Figure 36 As schematically shown in the first region R1, the first ion beam IB1 drawn from the ion source 20 via the extraction section 22 may contain, in addition to the target ion DI, the non-target ion OI. For example, if the target ion DI is a divalent ion, the non-target ion OI is a monovalent dimer ion. For ease of explanation, the divalent ion that is the target ion DI is represented as X. 2+ Here, "X" represents a unit atom or unit molecule with mass M, "2+" represents the charge of the ion (positive divalent), and the unit charge is set to e, indicating a total charge of 2e. For ease of explanation, the dimer ion of the non-target ion OI is represented as X2. + Here, "X2" indicates that there are two unit atoms or unit molecules with mass M (therefore, the total mass is 2M), "+" indicates the charge of the ion (positive monovalent), and the unit charge is set to e to indicate that the total charge is e. In addition, the target ion DI can be a positive or negative monovalent ion, a negative divalent ion, or a positive or negative trivalent or higher polyvalent ion.

[0317] As described above, if the target ion DI with mass M and charge 2e, and the non-target ion OI with mass 2M and charge e, enter the mass spectrometry analysis magnet device 24a as is, they will be deflected to different central orbits according to the applied magnetic field. Therefore, they can be appropriately separated (i.e., the non-target ion OI can be appropriately removed) using the subsequent mass spectrometry analysis slit 24b, etc. This is because the radius of rotational motion in the magnetic field, i.e., the Larmor radius, is different for the target ion DI and the non-target ion OI.

[0318] Specifically, the Larmor radius r is expressed as r = (2mE) 1 / 2 / (qB). Here, m represents the mass of the ion, E represents the energy of the ion, q represents the charge of the ion, and B represents the magnetic flux density applied by the mass spectrometry magnet device 24a. The target ion DI and the non-target ion OI are extracted through the extraction potential V in the extraction section 22. ext Each has 2eV ext and eV extThe energy. At this point, the Larmor radius of the target ion DI is (2•M•2eV). ext ) 1 / 2 / (2eB) = (MV ext ) 1 / 2 / (e 1 / 2 B), the Larmor radius of the non-target ion OI is (2.2 M eV). ext ) 1 / 2 / (eB) = 2 (MV) ext ) 1 / 2 / (e 1 / 2 B). Thus, the Larmor radius of the non-target ion OI is twice that of the target ion DI, and the two ions DI and OI are appropriately separated by the mass spectrometry analysis magnet device 24a. Furthermore, for ease of explanation, the potential difference set by the potential difference setting unit 403 is set to zero here.

[0319] However, a portion of the non-target ion OI can be transformed into the modified ion MI by undergoing at least one of decomposition and charge conversion upon passing through region R1. In the case of the non-target ion OI being a dimer ion X2... + In the case of mass M and charge e, X + It can be generated as a modified ion MI. For example, suppose that a modified ion MI is generated near the boundary between region 1 R1 and region 2 R2. In this case, as described above, the energy of the non-target ion OI before decomposition into the modified ion MI is eV. ext The non-target ion OI is divided into the modified ion MI and the neutral atom or molecule N, therefore the energy of the modified ion MI is eV. ext / 2. The Larmor radius of the metamorphic ion MI is (2•M•eV). ext / 2) 1 / 2 / (eB)=(MV) ext ) 1 / 2 / (e 1 / 2 B). This is approximately equal to the Larmor radius of the target ion DI.

[0320] Therefore, the modified ion MI cannot be separated from the target ion DI using only the mass spectrometry magnet device 24a and the mass spectrometry slit 24b. Furthermore, the modified ion MI is not limited to this example and can be any ion having substantially the same central orbital or Larmor radius as the target ion DI (i.e., which cannot be substantially separated from the target ion DI using only the mass spectrometry magnet device 24a and the mass spectrometry slit 24b). It is undesirable to irradiate the wafer with a second ion beam thus mixed with modified ions MI in the implantation processing chamber 14.

[0321] Therefore, in this embodiment, a potential difference setting unit 403 is provided. The potential difference set by the potential difference setting unit 403 is set such that the altered ion MI and the target ion DI generated by at least one of decomposition and charge conversion of a portion of the ion group (e.g., non-target ion OI) in the first ion beam IB1 passing through the first region R1 have different central orbits in the second region R2, and at least a portion of the altered ion MI cannot pass through the mass spectrometry analysis slit 24b.

[0322] For example, the potential difference setting unit 403 applies a first reference potential V to the first region R1. r1 Apply the same potential V as the first reference potential to region R2 in region 2. r1 Different first bias potentials V b1 The first reference potential V r1 It can be compared with the ground potential V, which is the third reference potential applied to the reference electrode 22b. gnd Equal to, for ease of explanation, hereafter, it is assumed to be zero (0). For ease of explanation, compared to such a first reference potential V r1 A potential higher than 0 is represented as a positive potential. For ease of explanation, a first reference potential V is used instead. r1 (=0) A low potential is represented as a negative potential.

[0323] Furthermore, at least one of the inlet and outlet of the mass spectrometry analysis magnet device 24a may be provided with a fifth opening OP5 for the passage of the first ion beam IB1, and a potential V applied to it that is greater than that of the second region R2. b1 Low second inhibition potential V sup2 The second suppression electrode 24e (inlet side) and / or 24f (outlet side). With the front slit 20c ( Figure 29 Similarly, the fifth opening OP5 may also have a slit shape with a long opening width in the horizontal direction and a short opening width in the vertical direction. In addition, the fifth opening OP5 may also be provided as a component different from the second suppression electrode 24e and / or 24f.

[0324] exist Figure 36 In the example, the potential difference setting unit 403 applies a zero first reference potential V to the first region R1. r1 (Not shown), a negative first bias potential V is applied to region R2 in the second region. b1 First bias potential V b1 For example, it can be applied to the frame of the mass spectrometry magnet device 24a.

[0325] Figure 37 This schematically illustrates an example of potential variation along the travel direction of the first ion beam IB throughout regions R1 and R2. The potential in the slit 20c located before the beginning position of region R1 is the extraction potential V.ext (For example, "+40kV"). From the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided), the potential decreases approximately linearly. The potential in the suppression electrode 22a is the suppression potential V. sup (For example, "-2kV"). In the region downstream of it, a first reference potential V is maintained at zero by reference electrode 22b, etc. r1 .

[0326] Next, if the magnet is near the inlet of the mass spectrometry analysis magnet device 24a and / or the second region R2, the potential is locally reduced to the second suppression potential V through the second suppression electrode 24e of the preceding stage. sup2 As shown in the figure, the second inhibition potential V sup2 Compared to the first inhibition potential V sup and the first reference potential V r1 Low. A negative first bias potential V was applied to the body of the subsequent mass spectrometry analysis magnet device 24a. b1 The first bias potential V b1 Compared to the second inhibition potential V sup2 High, and higher than the first reference potential V r1 Low. At the outlet of the mass spectrometry analysis magnet device 24a and / or the second region R2, the potential locally decreases to the second suppression potential V through the subsequent second suppression electrode 24f. sup2 .

[0327] The modified ion MI, generated by the modification of the non-target ion OI as a dimer ion, has a potential based on the extraction potential V near the boundary between region 1 R1 and region 2 R2. ext The energy eV ext / 2 and based on the first bias potential V b1 Energy - eV b1 Therefore, the total energy of the metamorphic ion MI is expressed as e(V). ext / 2-V b1 On the other hand, the divalent target ion DI has a potential based on the extraction potential V. ext Energy 2eV ext and based on the first bias potential V b1 Energy -2eV b1 Therefore, the total energy of the target ion DI is expressed as 2e(V). ext -V b1 ).

[0328] Due to the above, the first bias voltage V b1The resulting energy change causes the central orbit or Larmor radius of the altered ion MI in the mass spectrometry analysis magnet device 24a or region R2 to deviate from the central orbit or Larmor radius of the target ion DI. Specifically, the Larmor radius of the target ion DI is (2•M•2e(V)). ext -V b1 )) 1 / 2 / (2eB)=(M(V) ext -V b1 )) 1 / 2 / (e 1 / 2 B), in contrast, the Larmor radius of the metamorphic ion MI is (2•M•e(V)). ext / 2-V b1 )) 1 / 2 / (eB)=(M(V) ext -2V b1 )) 1 / 2 / (e 1 / 2 B). For example, in Figure 36 As schematically shown by the dotted line, the negative first bias voltage V applied to the second region R2... b1 The central orbit of the altered ion MI deviates outward from the central orbit (solid line) of the target ion DI. The altered ion MI, thus deviating outward, is cut off by the mass spectrometry slit 24b, which serves as the first separation opening in the subsequent stage.

[0329] Figure 38 This section shows specific examples of the central orbitals of various ions based on the extraction direction of the first ion beam (IB). "++" indicates the central orbital of the divalent target ion (DI), "Dimer" indicates the central orbital of the non-target ion (OI) as a monovalent dimer, and "P1" indicates the central orbital of... Figure 36 The central orbit of the metamorphic ion MI generated at position P1 (just before entering the mass spectrometry analysis magnet device 24a), where "P2" indicates the position of the metamorphic ion MI. Figure 36 The central orbit of the metamorphic ion MI generated at position P2 (just after entering the mass spectrometry analysis magnet device 24a), "P3" indicates that... Figure 36 The central orbit of the metamorphic ion MI generated at position P3 (later than position P2).

[0330] As by Figure 38As schematically shown by the arrows in the enlarged partial view, the central orbit of the altered ion MI changes depending on the generation position P1, P2, and P3. Here, when the generation position of the altered ion MI is changed from upstream P1 to downstream P2, the central orbit of the altered ion MI generated at position P2, while close to the central orbit of the target ion DI, is not aligned. Then, when the generation position of the altered ion MI is changed to the more downstream P3, the central orbit of the altered ion MI generated at position P3 is far from the central orbit of the target ion DI. Thus, when a negative first bias potential V is applied to the second region R2 and / or the mass spectrometry analysis magnet device 24a... b1 of Figures 36-38 In this embodiment, regardless of the generation location of the altered ion MI, its central orbit can be effectively prevented from interfering with the central orbit of the target ion DI. Therefore, it is preferable to apply the first bias potential V to the second region R2 and / or the mass spectrometry magnet device 24a. b1 It is negative.

[0331] Figure 39 The potential difference setting unit 403 applies a zero first reference potential V to the first region R1. r1 (Not shown), a positive first bias potential V is applied to region R2 in the second region. b1 Example. First bias potential V b1 For example, it can be applied to the frame of the mass spectrometry magnet device 24a.

[0332] Figure 40 This schematically illustrates an example of potential variation along the propagation direction of the first ion beam IB, spanning both regions R1 and R2. The potential in the front slit 20c is the extraction potential V. ext (For example, "+40kV"). From the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided), the potential decreases approximately linearly. The potential in the suppression electrode 22a is the suppression potential V. sup (For example, "-2kV"). In the region downstream of it, a first reference potential V is maintained at zero by a reference electrode 22b, etc., which is set at the starting position of the first region R1. r1 .

[0333] Next, if the magnet is near the inlet of the mass spectrometry analysis magnet device 24a and / or the second region R2, the potential is locally reduced to the second suppression potential V through the second suppression electrode 24e of the preceding stage. sup2 As shown in the figure, the second inhibition potential V sup2 Compared to the first inhibition potential V sup and the first reference potential V r1 Low. A positive first bias potential V was applied to the body of the subsequent mass spectrometry analysis magnet device 24a.b1 The first bias potential V b1 Compared to the first reference potential V r1 High. At the outlet of the mass spectrometry analysis magnet device 24a and / or the second region R2, the potential locally decreases to the second suppression potential V through the subsequent second suppression electrode 24f. sup2 .

[0334] As in Figure 39 As schematically shown by the dotted line, the positive first bias potential V applied to the second region R2... b1 The central orbit of the altered ion MI deviates inward from the central orbit (solid line) of the target ion DI. The altered ion MI, which deviates inward in this way, is cut off by the mass spectrometry slit 24b, which serves as the first separation opening in the subsequent stage.

[0335] Figure 41 This section shows specific examples of the central orbitals of various ions based on the extraction direction of the first ion beam (IB). "++" indicates the central orbital of the divalent target ion (DI), "Dimer" indicates the central orbital of the non-target ion (OI) as a monovalent dimer, and "P1" indicates the central orbital of... Figure 39 The central orbit of the metamorphic ion MI generated at position P1 (just before entering the mass spectrometry analysis magnet device 24a), where "P2" indicates the position of the metamorphic ion MI. Figure 39 The central orbit of the metamorphic ion MI generated at position P2 (just after entering the mass spectrometry analysis magnet device 24a), "P3" indicates that... Figure 39 The central orbit of the metamorphic ion MI generated at position P3 (later than position P2).

[0336] As by Figure 41 As schematically shown by the arrows in the enlarged partial view, the central orbit of the altered ion MI varies depending on the generation positions P1, P2, and P3. Here, the central orbit of the altered ion MI generated at position P1 on the upstream side is located to the left of the central orbit of the target ion DI, while the central orbit of the altered ion MI generated at position P2 on the downstream side is located to the right of the central orbit of the target ion DI. This indicates that the central orbit of the altered ion MI generated between P1 and P2 (especially near P2) interferes with the central orbit of the target ion DI and cannot be distinguished. Thus, a positive first bias potential V is applied to the second region R2 and / or the mass spectrometry analysis magnet device 24a. b1 of Figures 39-41 In this embodiment, depending on the generation location of the altered ion MI, its central orbit interferes with the central orbit of the target ion DI. Therefore, as described above, it is preferable to apply the first bias potential V to the second region R2 and / or the mass spectrometry analysis magnet device 24a. b1 It is negative.

[0337] Figure 42 This is a schematic diagram of the ion extraction device according to the third embodiment. (Regarding...) Figure 36 The same components as those in the second embodiment are marked with the same symbols, and repeated descriptions are omitted.

[0338] In this embodiment, the potential difference setting unit 403 applies a second reference potential V to the second region R2. r2 Apply the second reference potential V to the first region R1. r2 Different second bias potentials V b2 The second reference potential V r2 It can be compared with the ground potential V, which is the third reference potential applied to the reference electrode 22b. gnd Equal to, for ease of explanation, hereafter, it is assumed to be zero (0). For ease of explanation, compared to such a second reference potential V r2 A potential higher than (=0) is represented as a positive potential. For ease of explanation, a second reference potential V is used instead. r2 (=0) A low potential is represented as a negative potential.

[0339] Furthermore, a fifth opening OP5 for the passage of the first ion beam IB1 can be provided at the inlet of the mass spectrometry analysis magnet device 24a, and a potential V applied to it is greater than that of the second region R2. r2 Low negative second inhibition potential V sup2 The second suppression electrode 24e. And the anterior slit 20c ( Figure 29 Similarly, the fifth opening OP5 can also have a slit shape with a long opening width in the horizontal direction and a short opening width in the vertical direction. In addition, the fifth opening OP5 can also be provided as a component different from the second suppression electrode 24e.

[0340] exist Figure 42 In the example, the potential difference setting unit 403 applies a zero second reference potential V to the second region R2 (e.g., the frame of the mass spectrometry magnet device 24a). r2 A positive second bias voltage V is applied to region R1. b2 Second bias potential V b2 For example, it can be applied to the frame 22g that surrounds most of the first region R1.

[0341] Figure 43 This schematically illustrates an example of potential variation along the propagation direction of the first ion beam IB, spanning both regions R1 and R2. The potential in the front slit 20c is the extraction potential V. ext (For example, "+40kV"). From the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided), the potential decreases approximately linearly. The potential in the suppression electrode 22a is the suppression potential V. sup(For example, "-2kV"). In this downstream region, a second bias potential V is maintained at a positive value through a reference electrode 22b or a frame 22g, etc., located at the beginning position of the first region R1. b2 .

[0342] Next, if the magnet is near the entrance of the mass spectrometry analysis magnet device 24a and / or the second region R2, the potential is locally reduced to the second suppression potential V through the second suppression electrode 24e. sup2 As shown in the figure, the second inhibition potential V sup2 Compared to the first inhibition potential V sup and the second bias potential V b2 Low. A second reference potential V of zero is applied to the body of the subsequent mass spectrometry analysis magnet device 24a. r2 .

[0343] As in Figure 42 As schematically shown by the dotted line, the positive second bias voltage V applied to the first region R1... b2 The central orbit of the altered ion MI deviates outward from the central orbit (solid line) of the target ion DI. The altered ion MI, thus deviating outward, is cut off by the mass spectrometry slit 24b, which serves as the first separation opening in the subsequent stage.

[0344] Figure 44 This section shows specific examples of the central orbitals of various ions based on the extraction direction of the first ion beam (IB). "++" indicates the central orbital of the divalent target ion (DI), "Dimer" indicates the central orbital of the non-target ion (OI) as a monovalent dimer, and "P1" indicates the central orbital of... Figure 42 The central orbit of the metamorphic ion MI generated at position P1 (just before entering the mass spectrometry analysis magnet device 24a), where "P2" indicates the position of the metamorphic ion MI. Figure 42 The central orbit of the metamorphic ion MI generated at position P2 (just after entering the mass spectrometry analysis magnet device 24a), "P3" indicates that... Figure 42 The central orbit of the metamorphic ion MI generated at position P3 (later than position P2).

[0345] As by Figure 44As schematically shown by the arrows in the enlarged partial view, the central orbit of the altered ion MI changes depending on the generation position P1, P2, and P3. Here, when the generation position of the altered ion MI is changed from upstream P1 to downstream P2, the central orbit of the altered ion MI generated at position P2, while close to the central orbit of the target ion DI, is not aligned. Then, when the generation position of the altered ion MI is changed to the more downstream P3, the central orbit of the altered ion MI generated at position P3 is far from the central orbit of the target ion DI. Thus, when a positive second bias potential V is applied to the first region R1 and / or the frame 22g... b2 of Figures 42-44 In this embodiment, regardless of the generation location of the altered ion MI, its central orbit can be effectively prevented from interfering with the central orbit of the target ion DI. Therefore, it is preferable to apply a second bias potential V to the first region R1 and / or the frame 22g. b2 It is positive.

[0346] Figure 45 The potential difference setting unit 403 applies a zero second reference potential V to the second region R2. r2 A negative second bias voltage V is applied to region R1. b2 Example. Second bias potential V b2 For example, it can be applied to the frame 22g that surrounds most of the first region R1.

[0347] Figure 46 This schematically illustrates an example of potential variation along the propagation direction of the first ion beam IB, spanning both regions R1 and R2. The potential in the front slit 20c is the extraction potential V. ext (For example, "+40kV"). From the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided), the potential decreases approximately linearly. Regarding the potential in the suppression electrode 22a, it is related to the second suppression potential V described later. sup2 The same applies. In this downstream region, the second bias potential V is maintained at a negative value through the reference electrode 22b or the frame 22g, etc., located at the beginning position of the first region R1. b2 .

[0348] Next, if the magnet is near the entrance of the mass spectrometry analysis magnet device 24a and / or the second region R2, the potential is locally reduced to the second suppression potential V through the second suppression electrode 24e. sup2 As shown in the figure, the second inhibition potential V sup2 Compared to the second reference potential V r2 and the second bias potential V b2 Low. A second reference potential V of zero is applied to the body of the subsequent mass spectrometry analysis magnet device 24a. r2 .

[0349] As in Figure 45 As schematically shown by the dotted line, the negative second bias voltage V applied to the first region R1... b2 The central orbit of the altered ion MI deviates inward from the central orbit (solid line) of the target ion DI. The altered ion MI, which deviates inward in this way, is cut off by the mass spectrometry slit 24b, which serves as the first separation opening in the subsequent stage.

[0350] Figure 47 This section shows specific examples of the central orbitals of various ions based on the extraction direction of the first ion beam (IB). "++" indicates the central orbital of the divalent target ion (DI), "Dimer" indicates the central orbital of the non-target ion (OI) as a monovalent dimer, and "P1" indicates the central orbital of... Figure 45 The central orbit of the metamorphic ion MI generated at position P1 (just before entering the mass spectrometry analysis magnet device 24a), where "P2" indicates the position of the metamorphic ion MI. Figure 45 The central orbit of the metamorphic ion MI generated at position P2 (just after entering the mass spectrometry analysis magnet device 24a), "P3" indicates that... Figure 45 The central orbit of the metamorphic ion MI generated at position P3 (later than position P2).

[0351] As by Figure 47 As schematically shown by the arrows in the enlarged partial view, the central orbit of the altered ion MI varies depending on the generation positions P1, P2, and P3. Here, the central orbit of the altered ion MI generated at position P1 on the upstream side is located to the left of the central orbit of the target ion DI, while the central orbit of the altered ion MI generated at position P2 on the downstream side is located to the right of the central orbit of the target ion DI. This indicates that the central orbit of the altered ion MI generated between P1 and P2 (especially near P2) interferes with the central orbit of the target ion DI and cannot be distinguished. Thus, a negative second bias potential V is applied to the first region R1 and / or the frame 22g. b2 of Figures 45-47 In this embodiment, depending on the generation location of the altered ion MI, its central orbit interferes with the central orbit of the target ion DI. Therefore, as described above, it is preferable to apply a second bias potential V to the first region R1 and / or the frame 22g. b2 It is positive.

[0352] like Figure 36 Schematic illustration (in the same Figure 39 , Figure 42 , Figure 45(Illustrations omitted). The ion extraction device of this embodiment may include an orbital calculation unit 404, which calculates the center orbits of the target ion DI (solid line) and the altered ion MI (dotted line) based on the potential difference set by the potential difference setting unit 403. In the calculation of the orbital calculation unit 404, the Larmor radius or the generation positions P1, P2, and P3 of the altered ion MI are considered. The orbital calculation unit 404, for example, is located in the mass spectrometry slit 24b, which serves as the first separation opening. Figure 1 The position of the target ion DI and the altered ion MI is calculated based on the difference between the center orbits of the target ion DI and the altered ion MI in the deflection direction (x direction) of the mass spectrometry analysis magnet device 24a, which is the first beam deflection device.

[0353] Furthermore, the ion extraction device of this embodiment may include a beam size adjustment unit 405, which adjusts the size or width of the first ion beam IB1 at the position of the mass spectrometry slit 24b based on the deflection direction of the mass spectrometry magnet device 24a. For example, the beam size adjustment unit 405 may adjust the size or width of the first ion beam IB1 at the position of the mass spectrometry slit 24b based on the center orbits of the target ion DI and the altered ion MI calculated by the orbit calculation unit 404. Specifically, the beam size adjustment unit 405 adjusts the size or width of the first ion beam IB1 so that most of the target ion DI can pass through the mass spectrometry slit 24b, while most of the altered ion MI cannot pass through the mass spectrometry slit 24b.

[0354] The beam size adjustment unit 405 can adjust the size or width of the ion beam exiting the mass spectrometry analysis unit 24 while referring to the size or width of the ion beam measured by the first beam current measuring device 406. As the first beam current measuring device 406, an example can be given regarding... Figure 1 The injector Faraday cup 24c, as described above. Figure 1 Generally, the injector Faraday cup 24c can be located downstream of the mass spectrometry analysis slit 24b, or it can be located downstream of the mass spectrometry analysis magnet device 24a and upstream of the mass spectrometry analysis slit 24b.

[0355] Such a first beam current measuring device 406 measures the size or amplitude of the ion beam in the deflection direction (x direction) based on the mass spectrometry analysis magnet device 24a, which serves as the first beam deflection device. When positioned downstream of the mass spectrometry analysis slit 24b, the first beam current measuring device 406 can measure the beam current of the second ion beam and thus the size or width of the first ion beam in the deflection direction by changing the magnetic field applied by the mass spectrometry analysis magnet device 24a. When positioned upstream of the mass spectrometry analysis slit 24b, the first beam current measuring device 406 can measure the beam current of the first ion beam and thus the size or amplitude of the first ion beam in the deflection direction by moving along the deflection direction (for example, by driving the Faraday cup 24c, which serves as the first beam current measuring device 406, by the injector drive unit 24d).

[0356] The beam size adjustment unit 405 can adjust the distance between the first opening OP1 in the ion source 20 and the suppression electrode 22a, which serves as the first suppression electrode (e.g., Figure 29 The size or width of the ion beam is adjusted by adjusting the extraction electric field distribution near the first opening OP1 from the ion source 20, which is the sum of the first distance Gap1 and the second distance Gap2. As described above, the suppression electrode 22a, which is the first suppression electrode, has a third opening OP3 through which the first ion beam passes, and is subjected to a third reference potential V that is applied to the reference electrode 22b. gnd Low first inhibition potential V sup .

[0357] The beam size adjustment unit 405 can adjust the distance between the first opening OP in the ion source 20 and the movable conductor 22e (for example, Figure 29 The size or width of the ion beam is adjusted by adjusting the electric field distribution near the first opening OP1 from which the first ion beam is drawn from the ion source 20. As described above, the movable conductor 22e has a fourth opening OP4 for the passage of the first ion beam, and the distance between it and the first opening OP1 from which the first ion beam is drawn from the ion source 20 is variable.

[0358] The beam size adjustment unit 405 can adjust the control potential V applied to the movable conductor 22e. ctl (or add potential V) add The size or width of the ion beam is adjusted by adjusting the extraction electric field distribution near the first opening OP1 from the ion source 20. As described above, a potential V greater than the third reference potential is applied to the movable conductor 22e. gnd High control potential V ctl .

[0359] The beam size adjustment unit 405 can adjust the second suppression potential V applied to the second suppression electrodes 24e and / or 24f. sup2 This is to adjust the size or width of the ion beam.

[0360] The beam size adjustment unit 405 can adjust the size or width of the first ion beam based on the phase spatial distribution of the second ion beam measured by the phase spatial distribution measuring device 407. An angle measuring device installed in the beam analyzer 46 can be exemplified as the phase spatial distribution measuring device 407. This phase spatial distribution measuring device 407 measures the phase spatial distribution of the second ion beam downstream of the mass spectrometry analysis slit 24b, which serves as the first separation opening. Furthermore, a beam size inference unit 408 can be provided, which infers the size or amplitude of the first ion beam in the deflection direction (x-direction) at the position of the mass spectrometry analysis slit 24b based on the phase spatial distribution of the second ion beam measured by the phase spatial distribution measuring device 407. In this case, the beam size adjustment unit 405 can adjust the size or width of the first ion beam while referring to the size or width inferred by the beam size inference unit 408.

[0361] In addition to or instead of the beam size adjustment unit 405, the ion extraction device of this embodiment may also include an aperture width adjustment unit 409. This aperture width adjustment unit 409 adjusts the aperture width of the mass spectrometry slit 24b, which serves as the first separation aperture, based on the deflection direction (x direction) of the mass spectrometry magnet device 24a, which serves as the first beam deflection device. For example, the aperture width adjustment unit 409 may adjust the aperture width of the mass spectrometry slit 24b in the deflection direction based on the difference between the center orbits of the target ion DI and the modified ion MI calculated by the orbit calculation unit 404, and the size or width of the ion beam in the deflection direction measured by the first beam current measuring device 406. Specifically, the aperture width adjustment unit 409 adjusts the aperture width of the mass spectrometry slit 24b so that the beam around the center orbit of the target ion DI can pass through the mass spectrometry slit 24b, while the beam around the center orbit of the modified ion MI cannot pass through the mass spectrometry slit 24b.

[0362] Downstream of the mass spectrometry slit 24b, which serves as the first separation opening, a second beam deflection device 410 can be provided to deflect the second ion beam by applying an electric or magnetic field. The beam scanning unit 28 can be exemplified as the second beam deflection device 410. Figure 2 (etc.) or AEF electrode pairs 34a, 34b ( Figure 1(etc.). The deflection direction of the second ion beam based on the second beam deflection device 410 can be intersected (y direction) by the travel direction (z direction) of the second ion beam and the deflection direction (x direction) of the first ion beam based on the mass spectrometry magnet device 24a, which is the first beam deflection device, as in the beam scanning unit 28. Alternatively, it can be substantially the same (x direction) as the deflection direction (x direction) of the first ion beam based on the mass spectrometry magnet device 24a, which is the first beam deflection device, as in the AEF electrode pairs 34a and 34b. The second beam deflection device 410, for example, adjusts the electric or magnetic field applied to the second ion beam so that the center orbit of the target ion DI calculated by the orbit calculation unit 404 becomes the desired center orbit (i.e., so that the target ion DI passes through the desired orbit).

[0363] An energy analysis slit 34c, serving as a second separation opening, may be provided downstream of the second beam deflection device 410 (beam scanning section 28 and / or AEF electrode pair 34a, 34b). Figure 1 (etc.), the second separation opening separates the target ion DI and the altered ion MI according to an electric or magnetic field and allows them to pass through. Furthermore, a second beam current measuring device 411 for measuring the beam current of each of the target ion DI and the altered ion MI can be provided downstream of the energy analysis slit 34c. The tuning cups 38a to 38d can be exemplified as the second beam current measuring device 411. The second beam current measuring device 411 can measure the ratio of the beam current of the target ion DI and the altered ion MI. If the ratio of the beam current of the target ion DI and the altered ion MI measured by the second beam current measuring device 411 is outside the permissible range, the ion irradiation inhibiting section 412 prevents the second ion beam from irradiating the wafer.

[0364] If the ratio of the beam current of the target ion DI and the altered ion MI, as measured by the second beam current measuring device 411, is within the range that needs adjustment, the beam size adjustment unit 405 can adjust the size or width of the first ion beam at the position of the mass spectrometry analysis slit 24b, which serves as the first separation opening.

[0365] When the ratio of the beam current of the target ion DI and the altered ion MI, as measured by the second beam current measuring device 411, is within the range requiring adjustment, the beamforming section 26, another electric field applying device, can adjust the electric field applied to the ion beam. This electric field applying device is preferably positioned between the mass spectrometry magnet device 24a, which serves as the first beam deflection device, and the beam scanning section 28 and / or AEF electrode pairs 34a, 34b, which serve as the second beam deflection device 410, to hinder the transport of the altered ion MI by applying an electric field.

[0366] One aspect of the present invention is as follows.

[0367] (Method 1) An ion implantation device comprising: An ion source generates plasma containing the target ions; The extraction section extracts an ion cluster containing the target ions from the first opening of the ion source, thereby generating an ion beam; and In the injection processing chamber, the ion beam is irradiated onto the wafer. The extraction section is provided from downstream to upstream of the ion beam's travel direction: The reference electrode has a second opening through which the ion beam passes and is subjected to a reference potential; A suppression electrode, having a third opening through which the ion beam passes, and having a suppression potential applied lower than the reference potential; and The movable conductor has a fourth opening through which the ion beam passes, and the distance between it and the first opening in the direction of travel is variable.

[0368] (Method 2) The ion implantation apparatus as described in method 1, wherein... The first opening, the second opening, the third opening, and the fourth opening are slits that are long in the same direction.

[0369] (Method 3) The ion implantation apparatus as described in method 1 or 2, wherein... The ion beam passes through the first opening, the fourth opening, the third opening, and the second opening in that order. The distance between the first opening and the fourth opening is controlled to have a desired phase spatial distribution when the ion beam irradiates the wafer.

[0370] (Method 4) The ion implantation apparatus as described in method 1 or 2, wherein... Apply an extraction potential higher than the reference potential to the ion source. A control potential, which is the potential between the extraction potential and the reference potential, is applied to the movable conductor to control the phase spatial distribution of the ion beam emitted from the second opening.

[0371] (Method 5) The ion implantation apparatus as described in method 1 or 2, wherein... The distance between the suppression electrode and the reference electrode in the direction of travel is constant.

[0372] (Method 6) The ion implantation apparatus as described in method 1 or 2, wherein... The distance between the movable conductor and the suppression electrode in the direction of travel is variable.

[0373] (Method 7) The ion implantation apparatus as described in method 1 or 2, wherein... The distance between the first opening and the fourth opening in the direction of travel is controlled according to the state of the ion source to have a desired phase spatial distribution when the ion beam irradiates the wafer.

[0374] (Method 8) The ion implantation apparatus as described in method 1 or 2, wherein... A phase space distribution measuring device for measuring the phase space distribution of the ion beam is disposed downstream of the reference electrode.

[0375] (Method 9) The ion implantation apparatus as described in method 8, wherein... The distance between the first opening and the fourth opening in the direction of travel and at least one of the control potential applied to the movable conductor are controlled based on the phase spatial distribution of the ion beam measured by the phase spatial distribution measuring device.

[0376] (Method 10) The ion implantation apparatus as described in method 1 or 2, wherein... The device includes an ion source state acquisition unit, which acquires device parameters reflecting the state of the ion source.

[0377] (Method 11) The ion implantation apparatus as described in method 10, wherein... The device parameters are at least one of the following parameters set as parameters of the ion source: gas type, gas flow rate, evaporator temperature, arc current, arc voltage, source magnetocurrent, the total amount of charge carried by the ion cluster containing the target ion per unit time drawn from the ion source (i.e., the effective extraction current), and the beam current of the ion beam irradiating the wafer.

[0378] (Method 12) The ion implantation apparatus as described in method 10, wherein... Based on the device parameters acquired by the ion source state acquisition unit, at least one of the distance between the first opening and the fourth opening in the travel direction and the control potential applied to the movable conductor is controlled.

[0379] (Method 13) The ion implantation apparatus as described in method 1 or 2, wherein... The device includes an electrical information acquisition unit, which acquires the potential difference between the extraction potential applied to the ion source and the control potential applied to the movable conductor, and the total amount of charge carried by the ion cluster containing the target ion extracted from the ion source per unit time, i.e., the effective extraction current.

[0380] (Method 14) The ion implantation apparatus as described in method 13, wherein... Based on the potential difference and the effective lead-out current obtained by the electrical information acquisition unit, at least one of the following is controlled: the distance between the first opening and the fourth opening in the direction of travel, and the control potential applied to the movable conductor.

[0381] (Method 15) The ion implantation apparatus as described in method 1 or 2, wherein... The same potential is applied to the ion source and the movable conductor.

[0382] (Method 16) The ion implantation apparatus as described in method 1 or 2, wherein... The size of the fourth opening is larger than the size of the first opening.

[0383] (Method 17) An ion extraction device comprising: An ion source that generates plasma containing the target ions; and The extraction section extracts an ion cluster containing the target ion from the first opening of the ion source, thereby generating an ion beam. The extraction section is provided from downstream to upstream of the ion beam's travel direction: The reference electrode has a second opening through which the ion beam passes and is subjected to a reference potential; A suppression electrode, having a third opening through which the ion beam passes, and having a suppression potential applied lower than the reference potential; and The movable conductor has a fourth opening through which the ion beam passes, and the distance between it and the first opening in the direction of travel is variable.

[0384] (Method 18) An ion implantation apparatus comprising: An ion source generates plasma containing the target ions; The extraction section extracts an ion cluster containing the target ion from the ion source to generate a first ion beam; The first beam deflection device deflects the first ions by applying a magnetic field. The first separation opening allows the target ions contained in the first ion beam, deflected by the first beam deflector, to pass through; and The potential difference setting unit sets a potential difference in a first region, which is at least a portion of the area between the outlet of the lead-out unit and the inlet of the first beam deflection device, and in a second region, which is at least a portion of the area between the inlet and the outlet of the first beam deflection device. In the injection processing chamber, a second ion beam containing the target ions, passing through the first separation opening, irradiates the wafer. The potential difference is set such that the altered ions generated by a portion of the ion group in the first ion beam passing through the first region undergoing at least one of decomposition and charge conversion, and the target ion have different central orbits in the second region, and at least a portion of the altered ions cannot pass through the first separation opening.

[0385] (Method 19) The ion implantation apparatus as described in method 18, wherein... The potential difference setting unit applies a first reference potential to the first region and applies a first bias potential different from the first reference potential to the second region.

[0386] (Method 20) The ion implantation apparatus as described in method 18, wherein... The potential difference setting unit applies a second reference potential to the second region and applies a second bias potential to the first region that is different from the second reference potential.

[0387] (Method 21) The ion implantation apparatus as described in any one of methods 18 to 20, wherein... It is equipped with a first beam current measuring device, which measures the size of the first ion beam based on the deflection direction of the first beam deflection device.

[0388] (Method 22) The ion implantation apparatus as described in method 21, wherein... The first beam current measuring device is located downstream of the first separation opening, and measures the beam current of the second ion beam while changing the magnetic field applied by the first beam deflection device.

[0389] (Method 23) The ion implantation apparatus as described in method 21, wherein... The first beam current measuring device is located upstream of the first separation opening and measures the beam current of the first ion beam while moving along the deflection direction.

[0390] (Method 24) The ion implantation apparatus as described in method 21, wherein... The width of the first separation opening in the deflection direction is variable.

[0391] (Method 25) The ion implantation apparatus as described in method 24, wherein... The opening width is adjusted based on the difference between the central orbits of the target ion and the altered ion at the position of the first separation opening, in the deflection direction of the first beam deflection device, and the size of the first ion beam in the deflection direction.

[0392] (Method 26) The ion implantation apparatus as described in any one of methods 18 to 20, wherein... The device includes an orbital calculation unit that calculates the central orbits of the target ion and the altered ion based on the potential difference set by the potential difference setting unit.

[0393] (Method 27) The ion implantation apparatus as described in method 26, wherein... The orbit calculation unit calculates the difference between the central orbits of the target ion and the altered ion in the deflection direction of the first beam deflection device at the position of the first separation opening.

[0394] (Method 28) The ion implantation apparatus as described in any one of methods 18 to 20, wherein... It includes a beam size adjustment unit, which adjusts the size of the first ion beam in the deflection direction of the first beam deflection device at the position of the first separation opening.

[0395] (Method 29) The ion implantation apparatus as described in method 28, wherein... The beam size adjustment unit adjusts the extraction electric field distribution near the first opening from which the first ion beam is extracted from the ion source.

[0396] (Method 30) The ion implantation apparatus as described in embodiment 28 includes a first beam current measuring device that measures the size of the first ion beam in the deflection direction. The beam size adjustment unit adjusts the beam size while referencing the size measured by the first beam current measuring device.

[0397] (Method 31) An ion implantation apparatus as in Method 29, wherein, The extraction portion is provided from downstream to upstream of the direction of travel of the first ion beam: A reference electrode having a second opening through which the first ion beam passes and being subjected to a third reference potential; A first suppression electrode, having a third opening through which the first ion beam passes, and having a first suppression potential applied that is lower than the third reference potential; and The beam size adjustment unit adjusts the distance between the first opening in the ion source and the first suppression electrode.

[0398] (Method 32) An ion implantation apparatus as described in Method 28, wherein, The extraction portion is provided from downstream to upstream of the direction of travel of the first ion beam: A reference electrode having a second opening through which the first ion beam passes and being subjected to a third reference potential; A first suppression electrode, having a third opening through which the first ion beam passes, and having a first suppression potential applied that is lower than the third reference potential; and A variable conductor having a fourth opening through which the first ion beam passes, and the distance from the first opening from which the first ion beam exits the ion source is variable. The beam size adjustment unit adjusts the distance between the conductor and the first opening in the ion source.

[0399] (Method 33) The ion implantation apparatus as described in method 28, wherein... The extraction portion is provided from downstream to upstream of the direction of travel of the first ion beam: A reference electrode having a second opening through which the first ion beam passes and being subjected to a third reference potential; A first suppression electrode, having a third opening through which the first ion beam passes, and having a first suppression potential applied that is lower than the third reference potential; and A conductor having a fourth opening through which the first ion beam passes, and being subjected to a control potential higher than the third reference potential. The beam size adjustment unit adjusts the control potential.

[0400] (Method 34) An ion implantation apparatus as described in Method 28, wherein, A second suppression electrode is provided at least one of the inlet and outlet of the first beam deflection device. The second suppression electrode has a fifth opening through which the first ion beam passes and is subjected to a second suppression potential lower than that of the second region. The beam size adjustment unit adjusts the second suppression potential.

[0401] (Method 35) The ion implantation apparatus as described in method 28, wherein... A second beam deflection device is provided downstream of the first separation opening, which deflects the second ion beam by applying an electric or magnetic field.

[0402] (Method 36) The ion implantation apparatus as described in method 35, wherein... The deflection direction of the second ion beam based on the second beam deflection device intersects with the travel direction of the second ion beam and the deflection direction of the first ion beam based on the first beam deflection device.

[0403] (Method 37) The ion implantation apparatus as described in method 35, wherein... The second beam deflection device adjusts the electric or magnetic field applied to the second ion beam so that the target ion passes through a predetermined trajectory.

[0404] (Method 38) The ion implantation apparatus as described in method 35, wherein... A second separation opening is provided downstream of the second beam deflection device. This second separation opening separates the target ions and the altered ions according to the electric field or the magnetic field, allowing them to pass through. A second beam current measuring device is provided downstream of the second separation opening, and the second beam current measuring device measures the beam current of the target ion and the degenerated ion respectively.

[0405] (Method 39) The ion implantation apparatus as described in method 38, wherein... The device includes an ion irradiation inhibiting section, which prevents the second ion beam from irradiating the wafer when the ratio of the beam current of the target ion and the modified ion, as measured by the second beam current measuring device, is outside the permissible range.

[0406] (Method 40) The ion implantation apparatus as described in method 38, wherein... If the ratio of the beam current of the target ion and the modified ion, as measured by the second beam current measuring device, is within the range that needs adjustment, the beam size adjustment unit adjusts the size of the first ion beam at the position of the first separation opening.

[0407] (Method 41) The ion implantation apparatus as described in method 38, wherein... Between the first beam deflection device and the second beam deflection device, an electric field application device is provided to hinder the transport of the altered ions by applying an electric field. When the ratio of the beam current of the target ion and the modified ion, as measured by the second beam current measuring device, is within the range that needs adjustment, the electric field applying device adjusts the applied electric field.

[0408] (Method 42) The ion implantation apparatus as described in method 28, wherein... A phase space distribution measuring device for measuring the phase space distribution of the second ion beam is installed downstream of the first separation opening.

[0409] (Method 43) The ion implantation apparatus as described in method 42 comprises: A beam size estimation unit, which estimates the size of the first ion beam in the deflection direction based on the phase space distribution of the second ion beam measured by the phase space distribution measuring device, at the position of the first separation opening.

[0410] (Method 44) The ion implantation apparatus as described in method 42, wherein... The beam size adjustment unit adjusts the size of the first ion beam based on the phase space distribution of the second ion beam measured by the phase space distribution measuring device.

[0411] (Method 45) An ion extraction device comprising: An ion source generates plasma containing the target ions; The extraction section extracts an ion cluster containing the target ion from the ion source to generate a first ion beam; The first beam deflection device deflects the first ions by applying a magnetic field. The first separation opening allows the target ions contained in the first ion beam, deflected by the first beam deflector, to pass through; and The potential difference setting unit sets a potential difference in a first region, which is at least a portion of the area between the outlet of the lead-out unit and the inlet of the first beam deflection device, and in a second region, which is at least a portion of the area between the inlet and the outlet of the first beam deflection device. The potential difference is set such that the altered ions generated by a portion of the ion group in the first ion beam passing through the first region undergoing at least one of decomposition and charge conversion, and the target ion have different central orbits in the second region, and at least a portion of the altered ions cannot pass through the first separation opening.

[0412] The present invention has been described above with reference to the various embodiments described above. However, the present invention is not limited to the embodiments described above. The configurations of the various embodiments can be appropriately combined, and the configurations of the various embodiments can be replaced. Furthermore, the combination or processing order of the various embodiments can be appropriately rearranged based on the knowledge of the art, or various design changes or modifications can be applied to the embodiments. Embodiments with such rearrangements or modifications can also be included within the scope of the ion implantation apparatus and ion extraction apparatus of the present invention.

[0413] Embodiments of the present invention may take the form of a computer program comprising one or more computer-readable sequences describing the methods of the present invention, or may take the form of a non-transitory and tangible recording medium (e.g., non-volatile memory, magnetic tape, magnetic disk, or optical disk) storing such a computer program. A processor may implement the methods of the present invention by executing such a computer program.

[0414] Industrial availability This invention relates to ion implantation devices and ion extraction devices.

[0415] Symbol Explanation 10: Ion implantation device; 14: Implantation processing chamber; 20: Ion source; 20c: Front slit; 22: Extraction section; 22a: Suppression electrode; 22b: Reference electrode; 22e: Movable conductor; 22f: Telescopic mechanism; 22g: Frame; 24: Mass spectrometry analysis section; 24a: Mass spectrometry analysis magnet device; 24b: Mass spectrometry analysis slit; 24e: Second suppression electrode; 24f: Second suppression electrode; 34: Energy analysis section; 34c: Energy analysis slit; 38: Beam blocker; 46: Beam analyzer; 100: Angle measuring device; 200: Angle measuring device; 300: Angle measuring device 401: Ion source state acquisition unit, 402: Electrical information acquisition unit, 403: Potential difference setting unit, 404: Orbit calculation unit, 405: Beam size adjustment unit, 406: First beam current measuring device, 407: Phase spatial distribution measuring device, 408: Beam size inference unit, 409: Aperture width adjustment unit, 410: Second beam deflection device, 411: Second beam current measuring device, 412: Ion irradiation prohibition unit, OP1: First aperture, OP2: Second aperture, OP3: Third aperture, OP4: Fourth aperture, OP5: Fifth aperture, R1: First region, R2: Second region.

Claims

1. An ion implantation apparatus comprising: An ion source generates plasma containing the target ions; The extraction section extracts an ion cluster containing the target ions from the first opening of the ion source, thereby generating an ion beam; and In the injection processing chamber, the ion beam is irradiated onto the wafer. The extraction portion is provided from downstream to upstream of the direction of travel of the ion beam: The reference electrode has a second opening through which the ion beam passes and is subjected to a reference potential; A suppression electrode, having a third opening through which the ion beam passes, and having a suppression potential applied lower than the reference potential; and The movable conductor has a fourth opening through which the ion beam passes, and the distance between it and the first opening in the direction of travel is variable.

2. The ion implantation apparatus according to claim 1, wherein, The first opening, the second opening, the third opening, and the fourth opening are slits that are long in the same direction.

3. The ion implantation apparatus according to claim 1 or 2, wherein, The ion beam passes through the first opening, the fourth opening, the third opening, and the second opening in that order. The distance between the first opening and the fourth opening is controlled to have a desired phase spatial distribution when the ion beam irradiates the wafer.

4. The ion implantation apparatus according to claim 1 or 2, wherein, Apply an extraction potential higher than the reference potential to the ion source. A control potential, which is the potential between the extraction potential and the reference potential, is applied to the movable conductor to control the phase spatial distribution of the ion beam emitted from the second opening.

5. The ion implantation apparatus according to claim 1 or 2, wherein, The distance between the suppression electrode and the reference electrode in the direction of travel is constant.

6. The ion implantation apparatus according to claim 1 or 2, wherein, The distance between the movable conductor and the suppression electrode in the direction of travel is variable.

7. The ion implantation apparatus according to claim 1 or 2, wherein, The distance between the first opening and the fourth opening in the direction of travel is controlled according to the state of the ion source to have a desired phase spatial distribution when the ion beam irradiates the wafer.

8. The ion implantation apparatus according to claim 1 or 2, wherein, A phase space distribution measuring device for measuring the phase space distribution of the ion beam is disposed downstream of the reference electrode.

9. The ion implantation apparatus according to claim 8, wherein, The distance between the first opening and the fourth opening in the direction of travel and at least one of the control potential applied to the movable conductor are controlled based on the phase spatial distribution of the ion beam measured by the phase spatial distribution measuring device.

10. The ion implantation apparatus according to claim 1 or 2, wherein, The device includes an ion source state acquisition unit, which acquires device parameters reflecting the state of the ion source.

11. The ion implantation apparatus according to claim 10, wherein, The device parameters are at least one of the following parameters set as parameters of the ion source: gas type, gas flow rate, evaporator temperature, arc current, arc voltage, source magnetocurrent, the total amount of charge carried by the ion cluster containing the target ion per unit time drawn from the ion source (i.e., the effective extraction current), and the beam current of the ion beam irradiating the wafer.

12. The ion implantation apparatus according to claim 10, wherein, The distance between the first opening and the fourth opening in the travel direction and at least one of the control potential applied to the movable conductor are controlled based on the device parameters obtained by the ion source state acquisition unit.

13. The ion implantation apparatus according to claim 1 or 2, wherein, The device includes an electrical information acquisition unit, which acquires the potential difference between the extraction potential applied to the ion source and the control potential applied to the movable conductor, and the total amount of charge carried by the ion cluster containing the target ion extracted from the ion source per unit time, i.e., the effective extraction current.

14. The ion implantation apparatus according to claim 13, wherein, Based on the potential difference and the effective lead-out current obtained by the electrical information acquisition unit, at least one of the following is controlled: the distance between the first opening and the fourth opening in the direction of travel, and the control potential applied to the movable conductor.

15. The ion implantation apparatus according to claim 1 or 2, wherein, The same potential is applied to the ion source and the movable conductor.

16. The ion implantation apparatus according to claim 1 or 2, wherein, The size of the fourth opening is larger than the size of the first opening.

17. An ion extraction device comprising: An ion source that generates plasma containing the target ions; and The extraction section extracts an ion cluster containing the target ions from the first opening of the ion source, thereby generating an ion beam. The extraction portion is provided from downstream to upstream of the direction of travel of the ion beam: The reference electrode has a second opening through which the ion beam passes and is subjected to a reference potential; A suppression electrode, having a third opening through which the ion beam passes, and having a suppression potential applied lower than the reference potential; and The movable conductor has a fourth opening through which the ion beam passes, and the distance between it and the first opening in the direction of travel is variable.

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