Formulations comprising 3-amino-3-methyl-2-butanol and their use in electrical and electronic applications

Abstract

The present technology is generally directed to compositions comprising 3-amino-3-methyl-2-butanol. In particular, the present technology relates to compositions comprising 3-amino-3-methyl-2-butanol for use in the manufacture of batteries, semiconductor devices, and other electronic materials and electrical devices.

Description

Cross-reference to related applications

[0001] This application claims the benefit and priority of U.S. Provisional Application No. 63 / 540,850, filed September 27, 2023, which is incorporated herein by reference in its entirety for any and all purposes. Technical Field

[0002] This technology generally relates to compositions (also referred to herein as “formulations”) that can be used in electrical and electronic applications, wherein such compositions contain 3-amino-3-methyl-2-butanol. background

[0003] Many commonly used products, including electrical and electronic chemicals, are made from compositions of chemicals that are typically derived from non-renewable raw materials such as petroleum.

[0004] The use of non-renewable petroleum-based raw materials leads to an over-reliance on fossil fuels. This dependence on non-renewable petroleum-based raw materials contributes to environmental degradation, such as air pollution, water pollution, and global warming. Furthermore, these fossil fuels are often supplied by politically unstable regions of the world, frequently raising humanitarian concerns.

[0005] Therefore, as explained in more detail above and below, there remains a need for compositions made from natural, renewable starting materials for commonly used products (such as those used in the manufacture of electronic materials, electrical devices, lithium-ion batteries, and semiconductor devices) that offer comparable or better performance compared to existing products. Overview

[0006] This disclosure relates to compositions and formulations comprising 3-amino-3-methyl-2-butanol (also known as 3-amino-3-methylbut-2-ol; CAS No.: 13325-14-9) for use in electronic materials and electrical devices. 3-amino-3-methyl-2-butanol offers several advantages, including its improved sustainability characteristics, manifested in its ability to be manufactured as a renewable bio-based compound (i.e., not dependent on non-renewable petroleum-based raw materials) and its low toxicity (providing a safer alternative with reduced environmental and health impacts), while offering comparable or superior performance compared to petroleum-based alternatives and superior performance compared to current renewable alternatives (e.g., NH3). Therefore, the currently disclosed technology overcomes common adoption barriers associated with renewable electronic chemicals (e.g., poor performance and high cost), instead providing a high-performance, cost-effective solution with the potential for incorporation of bio-based carbon. Brief description of the attached diagram

[0007] Figure 1Viscosity test results of formulations of multi-walled carbon nanotube (MWCNT) dispersions in N-methyl-2-pyrrolidone (NMP) solvent using different dispersants are provided. Figure 1 The results shown indicate that 3-amino-3-methyl-2-butanol (“AMB”) performs better than 2-amino-2-methyl-1-propanol (“AMP”), and is significantly better than dispersant BYK163 (i.e., petroleum-based polyurethane).

[0008] Figure 2 Viscosity test results are provided for additional formulations of multi-walled carbon nanotube (MWCNT) dispersions in N-methyl-2-pyrrolidone (NMP) solvent using different dispersants. Figure 2 The results shown indicate that AMB performs similarly to AMP.

[0009] Figure 3 Viscosity test results are provided for additional formulations of multi-walled carbon nanotube (MWCNT) dispersions in water using different dispersants. Figure 3 The results shown indicate that AMB performs similarly to AMP.

[0010] Figure 4 This is a graph showing the dynamic contact angle measurement results of silicon wafers treated with different semiconductor cleaning solutions. Figure 4 The results shown indicate that wafers cleaned with formulations containing AMB have a lower contact angle than wafers treated with SC-1 (SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide, and deionized water at pH 9.5; a standard cleaning solution used in the semiconductor industry).

[0011] Figure 5 This is a graph showing the particle removal efficiency of surfaces treated with different semiconductor cleaning solutions. Figure 5 The results shown indicate that, based on the percentage of particulate removal efficiency (PRE), AMB demonstrates cleaning performance comparable to or better than AMP.

[0012] Figure 6 This is a graph showing the particle removal efficiency of surfaces treated with different semiconductor cleaning solutions under contact and non-contact cleaning conditions. Figure 6 The results shown indicate that, based on the percentage of particulate removal efficiency (PRE), AMB demonstrates cleaning performance comparable to or better than AMP.

[0013] Figure 7 This is a contact angle diagram of aluminum surfaces treated with different semiconductor cleaning solutions of varying concentrations. Figure 7 The results shown indicate that at concentrations of 0.25 M or higher, AMB reduces the contact angle to a greater extent than AMP.

[0014] Figure 8 This is a graph showing the normalized contact angle versus time for aluminum surfaces treated with different semiconductor cleaning solutions. Figure 8 The results shown indicate that, at all cleaning times, AMB reduced the contact angle to a greater extent than AMP. Detailed Explanation

[0015] The following terms are used throughout the text and are defined as follows.

[0016] As used herein and in the appended claims, in the context of describing elements (particularly in the context of the appended claims), singular articles such as “a” and “an” and “the” and similar pronouns are to be interpreted as covering both the singular and plural, unless otherwise stated herein or obviously contradicted by the context. Unless otherwise stated herein, the description of the range of values ​​herein is intended only as a shorthand method for individually referring to each individual value falling within that range, and each individual value is incorporated into this specification as if it were individually described herein. All methods described herein may be performed in any suitable order, unless otherwise stated herein or obviously contradicted by the context. Unless otherwise stated, the use of any and all instances or exemplary language (e.g., “such as”) provided herein is intended only to better illustrate the embodiments and does not constitute a limitation on the scope of the claims. No language in this specification should be construed as indicating that any unclaimed element is essential.

[0017] As used herein, “about” will be understood by those skilled in the art and will vary to some extent depending on the context in which it is used. If those skilled in the art, considering the context in which the term is used, are unclear about its usage, “about” will mean a particular term plus or minus up to 10%—for example, “about 10 wt%” is understood to mean “9 wt% to 11 wt%”. It should be understood that when a term is preceded by “about”, the term should be interpreted as disclosing both the term “about” and any terms not modified by “about”—for example, “about 10 wt%” discloses both “9 wt% to 11 wt%” and “10 wt%”.

[0018] As used in this disclosure, the phrase “and / or” will be understood to mean any single member mentioned alone or any combination of two or more thereof—for example, “A, B and / or C” means “A or B or C; A and B; A and C; B and C; or a combination of A, B and C”.

[0019] The term "alkyl," whether alone or as part of another group (e.g., in dialkylamino), refers to a group comprising both straight-chain and branched aliphatic groups (i.e., saturated hydrocarbon chains) and, unless otherwise specified, having 1 to 10, optionally 1 to 8, or optionally 1 to 6 alkyl carbon atoms. Representative alkyl groups include, but are not limited to, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, and hexyl. Unless otherwise specified, the alkyl group is optionally substituted with 1, 2, or 3, for example 1 or 2, or even only 1, substituent compatible with the compounds, monomers, and polymers described herein. In some embodiments, the alkyl group is unsubstituted.

[0020] The term "alkoxy" refers to a group in which oxygen is attached to a saturated straight-chain or branched alkyl group. Unless otherwise stated, an alkoxy group comprises 1 to 6 carbon atoms (e.g., methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy, sec-butoxy, tert-butoxy, n-pentoxy, neopentoxy, isopentoxy, n-hexyloxy, or isohexyloxy), and in any embodiment may have 1 to 4 carbon atoms. In any embodiment, the alkoxy group may include methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy, sec-butoxy, and tert-butoxy. In some embodiments, the alkoxy group is unsubstituted.

[0021] Groups having two or more attachment sites (i.e., divalent, trivalent, or polyvalent) in the compounds described herein are named using the suffix "ene". For example, a divalent alkyl group is alkylene, a divalent cycloalkyl group is cycloalkylene, and so on. Substituted groups having a single attachment site in the compounds of this technology are not referred to using the suffix "ene". Thus, for example, chloroethyl is not referred to herein as chloroethylene.

[0022] Generally, "substituted" refers to an alkyl group as defined above, in which one or more bonds with hydrogen atoms are replaced by bonds with non-hydrogen or non-carbon atoms. Substituted groups also include groups in which one or more bonds with carbon or hydrogen atoms are replaced by bonds with one or more heteroatoms (including double or triple bonds). In some embodiments, the substituted group is replaced by one, two, or three substituents. Examples of substituents include, but are not limited to, hydroxyl, amino, thiol, nitro, halogen, ester, amide, carbonyl, or carboxylic acid groups. Unless otherwise stated, the aforementioned substituents themselves are not further substituted.

[0023] Unless otherwise stated, all molecular weight (i.e. molar mass) data, number-average molecular weight data Mn, or weight-average molecular weight data Mw mentioned in this specification are molar masses, which can be determined by gel permeation chromatography (GPC).

[0024] As used herein, “binder” refers to the film-forming component of a coating. To form a film, the polymer binder (i.e., the polymer) can coalesce. Coalescing refers to a process in which the solvent (e.g., water) first evaporates, causing the polymer binder to aggregate together, and then fuses into an irreversibly bonded network structure, making the coating no longer soluble in the original carrier solvent. Polymer binder resins are also referred to as “binders” and “polymer binders.”

[0025] As used herein, a “water-dilutable polymeric adhesive” (i.e., a water-dilutable adhesive) refers to a hydrophobic resin that has been modified to include acidic groups, such that the adhesive is soluble in water when at least partially neutralized. As used herein, a “water-dispersible polymeric adhesive” (i.e., a water-dispersible adhesive) refers to a resin having acidic groups that can be dispersed in a continuous aqueous medium when at least partially neutralized.

[0026] As used herein, “substantially free” means less than about 2 wt% of the specified component based on the total weight of the composition. In some embodiments, the composition may contain less than about 1 wt%, less than about 0.5 wt%, or less than about 0.1 wt% of the specified component. In some embodiments, the composition may be free of detectable amounts of the component.

[0027] 3-Amino-3-methyl-2-butanol (“AMB”) composition In one aspect, the present technology provides compositions for use in electrical and electronic applications, such as for use in conductive films (including those for transparent conductors and sensors, semiconductor films for sensors, and photovoltaic devices), for use in lithium-ion batteries (LIBs), for use in battery manufacturing, and / or for use in semiconductor materials and devices (e.g., as a cleaning formulation in the manufacture of semiconductor materials and devices and / or for the preparation of semiconductor devices, such as diodes, transistors, integrated circuits, photonic devices, storage devices, and / or sensors), wherein the composition comprises about 30 wt% to about 99.99 wt% of 3-amino-3-methyl-2-butanol, about 0.01 wt% to about 70 wt% of water, and optionally no more than about 5 wt% of amino alcohols other than 3-amino-3-methyl-2-butanol (“other amino alcohols”). In any embodiment, the composition may comprise 3-amino-3-methyl-2-butanol in amounts of about 30 wt%, about 35 wt%, about 40 wt%, about 45 wt%, about 50 wt%, about 55 wt%, about 60 wt%, about 65 wt%, about 70 wt%, about 75 wt%, about 80 wt%, about 85 wt%, about 90 wt%, about 95 wt%, about 96 wt%, about 97 wt%, about 98 wt%, about 99 wt%, about 99.5 wt%, about 99.9 wt%, about 99.95 wt%, about 99.99 wt%, or any range including any two of these values ​​and / or between any two of these values. For example, the composition may comprise 85 wt% to 95 wt% of 3-amino-3-methyl-2-butanol. In any embodiment, the composition may comprise at least about 90 wt% of 3-amino-3-methyl-2-butanol.

[0028] In any embodiment, the composition may contain 0.01 wt% to about 70 wt% water. These compositions may be solutions, such as homogeneous solutions, at room temperature. In any embodiment, the composition may comprise about 0.01 wt%, about 0.05 wt%, about 0.1 wt%, about 0.5 wt%, about 1 wt%, about 2 wt%, about 3 wt%, about 4 wt%, about 5 wt%, about 6 wt%, about 7 wt%, about 8 wt%, about 9 wt%, about 10 wt%, about 11 wt%, about 12 wt%, about 13 wt%, about 14 wt%, about 15 wt%, about 16 wt%, about 17 wt%, about 18 wt%, about 19 wt%, about 20 wt%, about 21 wt%, about 22 wt%, about 23 wt%, about 24 wt%, about 25 wt%, about 30 wt%, about 35 wt%, about 40 wt%, about 45 wt%, about 50 wt%, about 55 wt%, about 60 wt%, about 65 wt%, about 70 wt%. The water content may be wt% or include any two of these values ​​and / or any range between any two of these values. Therefore, in any embodiment herein, the composition may contain 5 wt% to 15 wt% water or about 10 wt% water. The water may be tap water, deionized water, distilled water, reverse osmosis (RO) water, or any combination thereof, including, for example, double-distilled water. In any embodiment herein, the purity and water content may be adjusted depending on the desired physical properties and end-use application.

[0029] In any embodiment of this document, water and / or other amino alcohols may be included in the composition comprising 3-amino-3-methyl-2-butanol, for example, to improve handling and / or alter performance characteristics. For example, adding water to a composition comprising 3-amino-3-methyl-2-butanol may increase the flash point, decrease the freezing point, and / or decrease the viscosity of the composition. Exemplary other amino alcohols that may be included in compositions in any embodiment of this document include, but are not limited to, 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof. The composition of any embodiment herein may comprise other amino alcohols (e.g., 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof) in amounts of at least about 0.01 wt%, at least about 0.02 wt%, at least about 0.03 wt%, at least about 0.04 wt%, at least about 0.05 wt%, at least about 0.06 wt%, at least about 0.07 wt%, at least about 0.08 wt%, at least about 0.09 wt%, at least about 0.1 wt%, at least about 0.25 wt%, at least about 0.5 wt%, at least about 0.75 wt%, at least about 1 wt%, at least about 1.5 wt%, at least about 2 wt%, at least about 2.5 wt%, at least about 3 wt%. wt%, at least about 3.5 wt%, at least about 4 wt%, at least about 4.5 wt%, at least about 5 wt%, about 8 wt%, about 10 wt%, about 15 wt%, about 20 wt%, about 25 wt%, about 30 wt%, about 35 wt%, about 40 wt%, about 45 wt%, about 50 wt%, about 55 wt%, about 60 wt%, or any two of these values ​​and / or any range between any two of these values.The composition of any embodiment herein may comprise other amino alcohols (e.g., 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof) in amounts of no more than about 0.01 wt%, no more than about 0.02 wt%, no more than about 0.03 wt%, no more than about 0.04 wt%, no more than about 0.05 wt%, no more than about 0.06 wt%, no more than about 0.07 wt%, no more than about 0.08 wt%, no more than about 0.09 wt%, no more than about 0.1 wt%, no more than about 0.25 wt%, no more than about 0.5 wt%, no more than about 0.75 wt%, no more than about 1 wt%, no more than about 1.5 wt%, no more than about 2 wt%, not more than about 2.5 wt%, not more than about 3 wt%, not more than about 3.5 wt%, not more than about 4 wt%, not more than about 4.5 wt%, not more than about 5 wt%, or any two of these values ​​and / or any range between any two of these values.

[0030] In any embodiment herein, the composition may contain less than about 2 wt% of a secondary amine (e.g., 3-(ethylamino)-3-methylbut-2-ol, 2-(butamino)ethanol, diethanolamine, diisopropanolamine (also known as 1-(2-hydroxypropylamino)prop-2-ol), and / or dicyclohexylamine). Therefore, in any embodiment herein, the composition may contain less than about 2 wt%, less than about 1.5 wt%, less than about 1 wt%, less than about 0.5 wt%, or any two of these values ​​and / or any range between these values. For example, in any embodiment herein, the composition may contain less than about 0.5 wt% of a secondary amine.

[0031] In any embodiment herein, the composition may exhibit a bio-based content of 0% to 100% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24. For example, such a range of bio-based content of 3-amino-3-methyl-2-butanol in compositions of the present technology can be provided by using pure petroleum-based 3-amino-3-methyl-2-butanol (i.e., having 0% bio-based content), using 3-amino-3-methyl-2-butanol produced partially from bio-based starting materials, using a combination of pure petroleum-based 3-amino-3-methyl-2-butanol and 3-amino-3-methyl-2-butanol produced partially or wholly from bio-based starting materials, or—for 100% bio-based content of 3-amino-3-methyl-2-butanol—using 3-amino-3-methyl-2-butanol produced entirely from bio-based starting materials. Therefore, in any embodiment herein, the composition may exhibit a bio-based content of 3-amino-3-methyl-2-butanol (determined by radiocarbon analysis according to ASTM D6866-24) of 0%, at least about 1%, at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35%, at least about 40%, at least about 45%, at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, about 100%, or any two of these values ​​and / or any range between any two of these values. For example, the composition of any embodiment herein may exhibit a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol as determined by radiocarbon analysis according to ASTM D6866-24, or may exhibit a bio-based content of at least about 25% of 3-amino-3-methyl-2-butanol as determined by radiocarbon analysis according to ASTM D6866-24.

[0032] Compositions containing 3-amino-3-methyl-2-butanol for use in conductive and semiconductor films In one aspect, this technology provides compositions comprising 3-amino-3-methyl-2-butanol (also known as 3-amino-3-methylbut-2-ol; CAS No.: 13325-14-9) for use in electrical and electronic applications, such as conductive films, including conductive films for transparent conductors and sensors, semiconductor films for sensors, and photovoltaic applications. Specifically, this technology provides compositions that can be used to manufacture electrical and electronic devices such as batteries, integrated circuits, and photovoltaic devices, and compositions that can be used for electronic materials important to their operation, such as semiconductors. The compositions can be solutions, dispersions, slurries, or pastes that can be cast, printed, sprayed, or otherwise deposited to form conductive films, including conductive films for transparent conductors or sensors, or semiconductor films, including semiconductor films for sensors and photovoltaic applications. For example, the compositions described herein can be slurries comprising conductive materials and / or semiconductor materials, as well as additives (e.g., 3-amino-3-methyl-2-butanol).

[0033] Additives can provide one or more advantages to the composition: additives can reduce the viscosity of the slurry, allowing a predetermined weight percentage of solid material to be added to the slurry without impairing the slurry casting, providing an electrical or electronic device with a predetermined conductivity; additives can lower the freezing point of the composition to improve handling, reduce impurities, and / or alter performance characteristics.

[0034] The composition may comprise a slurry of conductive carbon. In any embodiment, the conductive carbon may comprise carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, carbon nanotubes (e.g., single-walled carbon nanotubes, multi-walled carbon nanotubes, or combinations thereof), graphene, or any combination of two or more thereof. For example, the composition may comprise carbon nanotubes (e.g., single-walled carbon nanotubes, multi-walled carbon nanotubes, or combinations thereof) and additives in a solvent (e.g., N-methyl-2-pyrrolidone (NMP) and / or water), wherein the additives comprise 3-amino-3-methyl-2-butanol. Some non-limiting examples of suitable solvents include certain ketones, amides, nitriles, and sulfoxides, such as methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidone (NMP), acetonitrile, water (e.g., deionized water), certain glycol ethers, and dimethyl sulfoxide.

[0035] The composition may comprise a paste of semiconductor material. In any embodiment, exemplary semiconductor materials may include silicon, silicon carbide, germanium, gallium arsenide, aluminum gallium arsenide, indium phosphide, aluminum gallium indium phosphide, indium gallium arsenide, indium antimony arsenide phosphide, boron nitride, boron phosphide, boron arsenide, aluminum nitride, cadmium telluride, or any combination of two or more thereof.

[0036] In any aspect and / or embodiment of this document, the composition may further comprise an amino alcohol other than 3-amino-3-methyl-2-butanol (“other amino alcohols”), wherein exemplary other amino alcohols that may be included in the composition according to any embodiment of this document include, but are not limited to, 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof. Compositions in any aspect and / or embodiment of this document may contain other amino alcohols (e.g., 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof) in amounts of at least about 0.01 wt%, at least about 0.02 wt%, at least about 0.03 wt%, at least about 0.04 wt%, at least about 0.05 wt%, at least about 0.06 wt%, at least about 0.07 wt%, at least about 0.08 wt%, at least about 0.09 wt%, at least about 0.1 wt%, at least about 0.25 wt%, at least about 0.5 wt%, at least about 0.75 wt%, at least about 1 wt%, at least about 1.5 wt%, at least about 2 wt%, at least about 2.5 wt%, at least about 3 wt%, at least about 3.5 wt%, at least about 4 wt%, at least about 4.5 wt%, at least about 5 wt%, about 8 wt%, about 10 wt%, about 15 wt%, about 20 wt%, about 25 wt%, about 30 wt%, about 35 wt%, about 40 wt%, about 45 wt%, about 50 wt%, about 55 wt%, about 60 wt%, or any two of these values ​​and / or any range between any two of these values.Compositions in any aspect and / or embodiment of this document may contain other amino alcohols (e.g., 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof) in amounts not more than about 0.01 wt%, not more than about 0.02 wt%, not more than about 0.03 wt%, not more than about 0.04 wt%, not more than about 0.05 wt%, not more than about 0.06 wt%, not more than about 0.07 wt%, not more than about 0.08 wt%, not more than about 0.09 wt%, not more than about 0.1 wt%, not more than about 0.25 wt%, not more than about 0.5 wt%, not more than about 0.75 wt%, not more than about 1 wt%, not more than about 1.5 wt%. wt%, not more than about 2 wt%, not more than about 2.5 wt%, not more than about 3 wt%, not more than about 3.5 wt%, not more than about 4 wt%, not more than about 4.5 wt%, not more than about 5 wt%, or including any two of these values ​​and / or any range between any two of these values.

[0037] In any aspect and / or embodiment herein, the composition may exhibit a bio-based content of 0% to 100% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24. Therefore, in any embodiment herein, the composition may exhibit a bio-based content of 3-amino-3-methyl-2-butanol (determined by radiocarbon analysis according to ASTM D6866-24) of 0%, at least about 1%, at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35%, at least about 40%, at least about 45%, at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, about 100%, or any two of these values ​​and / or any range between any two of these values. For example, compositions of any embodiment herein may exhibit a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol as determined by radiocarbon analysis according to ASTM D6866-24, or may exhibit a bio-based content of at least about 25% of 3-amino-3-methyl-2-butanol as determined by radiocarbon analysis according to ASTM D6866-24. Therefore, compositions of any aspect and / or embodiment herein may comprise a renewable bio-based compound (i.e., 3-amino-3-methyl-2-butanol) exhibiting low toxicity while providing performance comparable to or superior to petroleum-based alternatives and superior to current renewable alternatives (e.g., NH3).

[0038] The conductive film composition of this technology may contain solvent and additive in the following weight ratios: 300:1 to about 1:300, such as about 300:1, about 150:1, about 75:1, about 37:1, about 18:1, about 9:1, about 4:1, about 3:1, about 2:1, about 1:1, about 1:2, about 1:3, about 1:4, about 1:9, about 1:18, about 1:37, about 1:75, about 1:150, about 1:300, or any two of these values ​​and / or any range between any two of these values.

[0039] The conductive film composition of this technology may contain a wide range of amounts of the additive described herein (i.e., 3-amino-3-methyl-2-butanol). For example, the composition may contain 3-amino-3-methyl-2-butanol in amounts from about 0.005 wt% to about 10 wt% based on the total weight of the composition, such as about 0.01 wt% to about 10 wt%, about 0.05 wt% to about 8 wt%, about 0.05 wt% to about 5 wt%, about 0.05 wt% to about 3 wt%, about 0.05 wt% to about 2 wt%, about 0.05 wt% to about 1 wt%, about 0.1 wt% to about 20 wt%, about 0.1 wt% to about 5 wt%, about 0.1 wt% to about 1 wt%, about 0.5 wt% to about 10 wt%, or any value or subrange thereof. In some embodiments, the composition may comprise about 0.005 wt%, about 0.01 wt%, about 0.05 wt%, about 0.1 wt%, about 0.15 wt%, about 0.2 wt%, about 0.3 wt%, about 0.4 wt%, about 0.5 wt%, about 0.75 wt%, about 1 wt%, about 1.5 wt%, about 2 wt%, about 3 wt%, about 4 wt%, about 5 wt%, about 6 wt%, about 7 wt%, about 8 wt%, about 9 wt%, or about 10 wt%, or any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may comprise about 0.1 wt% to about 1 wt% of additives based on the total weight of the composition.

[0040] The conductive film composition of this technology includes a solvent. The solvent may include water, N-methyl-2-pyrrolidone, methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidine (NMP), acetonitrile, dimethyl sulfoxide, or any combination of two or more thereof. The solvent may be used when preparing and / or applying the slurry composition. In some embodiments, the composition may comprise at least about 1 wt% of solvent, at least about 2 wt% of solvent, at least about 5 wt% of solvent, at least about 10 wt% of solvent, at least about 15 wt% of solvent, at least about 20 wt% of solvent, at least about 25 wt% of solvent, at least about 30 wt% of solvent, at least about 35 wt% of solvent, at least about 40 wt% of solvent, at least about 45 wt% of solvent, at least about 50 wt% of solvent, at least about 55 wt% of solvent, at least about 60 wt% of solvent, at least about 70 wt%, at least about 80 wt%, at least about 90 wt%, or include any two of these values ​​and / or any range of solvent between any two of these values. In some embodiments, the composition may comprise about 1 wt% to about 99 wt%, about 20 wt% to about 99 wt%, about 35 wt% to about 97 wt%, about 45 wt% to about 95 wt%, about 50 wt% to about 95 wt%, about 80 wt% to about 98 wt%, or a solvent comprising any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may comprise about 85 wt% to about 98 wt% of solvent.

[0041] The conductive film composition of this technology comprises a conductive material. The conductive material can be any conductive material known in the art. The conductive material can be conductive carbon. In any embodiment, the conductive carbon can include carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, carbon nanotubes (e.g., single-walled carbon nanotubes, multi-walled carbon nanotubes, or combinations thereof), graphene, or any combination of two or more thereof. Typically, the conductive film formulation of the present invention comprises about 0.1 wt% of a cathode active material to about 90 wt% of a cathode active material, for example, about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt%, 80 wt%, 85 wt%. The positive electrode active material is present in any one of wt% or 90 wt%, or in a range between and including any two of the aforementioned values. For example, the composition may contain conductive material in amounts of about 0.2 wt% to about 20 wt%, about 0.2 wt% to about 10 wt%, or about 1 wt% to about 5 wt%.

[0042] The conductive material composition of this technology may include a component that acts as a dispersant. Suitable dispersants may include polymeric dispersants such as polyvinylpyrrolidone (PVP), polyacrylic acid, polyacrylate, polyacrylamide, polyphosphate, polyphosphate, etc. Suitable amounts include any one of about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, or a range between and including any two of the foregoing values. In any embodiment, the amount of dispersant may be from about 0.1 wt% to about 10 wt%, or from about 0.1 wt% to about 5 wt%, or even from about 0.1 wt% to about 3 wt%.

[0043] The conductive composition of this technology may further comprise a polymeric binder. Suitable polymeric binders include polyvinylidene fluoride, styrene-butadiene copolymer, carboxymethyl cellulose, polyacrylate latex, or any mixture of two or more thereof. In any embodiment, the polymeric binder may be polyvinylidene fluoride and the solvent may be NMP.

[0044] Compositions containing 3-amino-3-methyl-2-butanol for use in batteries On the other hand, this technology provides compositions comprising 3-amino-3-methyl-2-butanol for use in the manufacture of lithium-ion batteries (LIBs) and / or batteries. Specifically, this technology provides compositions that can be used to manufacture lithium-ion batteries. The compositions can be solutions, dispersions, slurries, or pastes that can be cast, printed, sprayed, or otherwise deposited to form lithium-ion battery components (e.g., cathodes, anodes, or separators). For example, the compositions described herein may contain a polymer and an additive (e.g., 3-amino-3-methyl-2-butanol) in a solution intended for preparing polymer separators for lithium-ion batteries. For example, the compositions described herein may contain an electrode active material and an additive (e.g., 3-amino-3-methyl-2-butanol) in a slurry intended for preparing electrodes for lithium-ion batteries.

[0045] In some embodiments, the additive can reduce the viscosity of the slurry, allowing a predetermined weight percentage of solid material to be added to the slurry without impairing slurry casting, thereby providing an electrode with a predetermined conductivity and energy storage capacity. In some embodiments, the additive can lower the freezing point of the composition to improve handling, reduce impurities, and / or alter performance characteristics. As previously discussed, in any aspect and / or embodiment herein, the composition may exhibit a bio-based content of 0% to 100% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24. Therefore, in any embodiment herein, the composition may exhibit a bio-based content of 3-amino-3-methyl-2-butanol (determined by radiocarbon analysis according to ASTM D6866-24) of 0%, at least about 1%, at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35%, at least about 40%, at least about 45%, at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, about 100%, or any two of these values ​​and / or any range between any two of these values.

[0046] The compositions of this technology may contain a wide range of amounts of the additive described herein (i.e., 3-amino-3-methyl-2-butanol). For example, the composition may contain 3-amino-3-methyl-2-butanol in amounts from about 0.005 wt% to about 10 wt% based on the total weight of the composition, such as from about 0.01 wt% to about 10 wt%, from about 0.05 wt% to about 8 wt%, from about 0.05 wt% to about 5 wt%, from about 0.05 wt% to about 3 wt%, from about 0.05 wt% to about 2 wt%, from about 0.5 wt% to about 10 wt%, or any value or subrange thereof. In some embodiments, the composition may comprise about 0.005 wt%, about 0.01 wt%, about 0.05 wt%, about 0.1 wt%, about 0.15 wt%, about 0.2 wt%, about 0.3 wt%, about 0.4 wt%, about 0.5 wt%, about 0.75 wt%, about 1 wt%, about 1.5 wt%, about 2 wt%, about 3 wt%, about 4 wt%, about 5 wt%, about 6 wt%, about 7 wt%, about 8 wt%, about 9 wt%, or about 10 wt%, or any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may comprise about 0.2 wt% to about 2 wt% of additives based on the total weight of the composition.

[0047] The compositions of this technology may contain a solvent. The solvent may be any suitable polar solvent known in the art, such as water, methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidone (NMP), acetonitrile, dimethyl sulfoxide, or any combination of two or more thereof. N-methyl-2-pyrrolidone may be used as a solvent when preparing and / or applying the slurry composition. In some embodiments, the composition may comprise at least about 1 wt% of solvent, at least about 2 wt% of solvent, at least about 5 wt% of solvent, at least about 10 wt% of solvent, at least about 15 wt% of solvent, at least about 20 wt% of N-methyl-2-pyrrolidone, at least about 25 wt% of N-methyl-2-pyrrolidone, at least about 30 wt% of N-methyl-2-pyrrolidone, at least about 35 wt% of N-methyl-2-pyrrolidone, at least about 40 wt% of N-methyl-2-pyrrolidone, at least about 45 wt% of N-methyl-2-pyrrolidone, at least about 50 wt% of N-methyl-2-pyrrolidone, at least about 55 wt% of N-methyl-2-pyrrolidone, at least about 60 wt% of N-methyl-2-pyrrolidone, or include any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may comprise about 1 wt% to about 99 wt% of N-methyl-2-pyrrolidone, about 20 wt% to about 99 wt% of N-methyl-2-pyrrolidone, about 35 wt% to about 97 wt%, about 45 wt% to about 95 wt%, about 50 wt% to about 95 wt%, about 80 wt% to about 98 wt%, or any two of these values ​​and / or any range between any two of these values ​​of N-methyl-2-pyrrolidone. In some embodiments, the composition may comprise about 20 wt% to about 80 wt% of N-methyl-2-pyrrolidone.

[0048] LIB positive electrode preparation The LIB positive electrode formulation of this technology includes a positive electrode active material. The positive electrode active material can be any positive electrode active material known in the art. In any embodiment, the positive electrode active material may include lithium nickel manganese cobalt oxide (NMC, LiNi). x Mn y Co z Lithium iron phosphate (LFP, LiFePO4), lithium cobalt oxide (LCO, LiCoO2), lithium manganese oxide (LMO, LiMn2O4), lithium nickel cobalt aluminum oxide (NCA, LiNiCoAlO2), lithium titanate (LTO, Li2TiO3), lithium manganese iron phosphate (LMFP, LiMn2O4). x Fe (1-x)PO4) or mixtures thereof. Typically, the LIB cathode formulation of the present invention comprises about 5 wt% to about 90 wt% of cathode active material, for example, about 5 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt%, 80 wt%, 85 wt%, or 90 wt% or a range between any two of the foregoing values ​​and including the range of said two values. For example, the composition may comprise about 20 wt.% to about 70 wt% or about 40 wt% to about 80 wt% of cathode active material.

[0049] In any embodiment of this technology, the LIB cathode formulation may contain about 20 wt% to about 70 wt% of LFP. For example, LFP may be present in any one of about 20 wt%, 25 wt%, 30 wt%, 30 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, or 70 wt%, or a range between and including any two of the aforementioned values. In any embodiment, the cathode formulation may contain about 20 wt% to about 70 wt% of LFP. For example, NCA may be present in any one of about 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt%, or 80 wt% of NCA, or a range between and including any two of the aforementioned values. For example, the NCA cathode formulation may contain about 50 wt% or about 55 wt% to about 70 wt% NCA. In any embodiment, the cathode formulation may contain about 30 wt% to about 80 wt% LMFP. For example, LMFP may be present in any one of about 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt% or 80 wt% LMFP, or in a range between and including any two of the foregoing values. For example, the LMFP cathode formulation may contain about 60 wt% to about 70 wt% or about 50 wt% LMFP.

[0050] The LIB positive electrode formulation of this technology may contain a solvent (acting as a dispersant). The solvent may include water and / or any suitable polar organic solvent known in the art, such as those with a dielectric constant of at least 15, for example, 15, 20, 25, 30, 35, 40, 45 or greater, or values ​​between and including any two of the foregoing values. Some non-limiting examples of suitable solvents include certain ketones, amides, nitriles, and sulfoxides, such as methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidine (NMP), acetonitrile, and / or dimethyl sulfoxide. In any embodiment, the solvent may be NMP. The LIB positive electrode formulation of this technology may contain about 0.1 wt% to about 99 wt% of solvent. Therefore, suitable amounts include any one of about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, 90 wt%, 95 wt%, 96 wt%, 97 wt%, 98 wt%, or 99 wt%, or a range between and including any two of the foregoing values. In any embodiment, the amount of solvent can be from about 10 wt% to about 99 wt%, or from about 20 wt% to about 95 wt%, or even from about 30 wt% to about 90 wt%.

[0051] The LIB positive electrode formulation of this technology may include a component acting as a dispersant. Suitable dispersants may include polymeric dispersants such as polyvinylpyrrolidone (PVP), polyacrylic acid, polyacrylate, polyacrylamide, polyphosphate, polyphosphate, etc. Suitable amounts include any one of about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, or a range between and including any two of the foregoing values. In any embodiment, the amount of dispersant may be from about 0.1 wt% to about 10 wt%, or from about 0.1 wt% to about 5 wt%, or even from about 0.1 wt% to about 3 wt%.

[0052] The LIB positive electrode formulation of this technology may further include a polymer binder. Suitable polymer binders include polyvinylidene fluoride, styrene-butadiene copolymer, carboxymethyl cellulose, polyacrylate latex, or any mixture of two or more thereof. In any embodiment, the polymer binder may be polyvinylidene fluoride and the solvent may be NMP.

[0053] In any embodiment, the LIB positive electrode formulation of this technology may further include a conductive agent. "Conductive agent" refers to any chemical substance or substance that increases the conductivity of an electrode (including the positive electrode of the LIB). In any embodiment, the conductive agent may include carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, carbon nanotubes (e.g., single-walled carbon nanotubes, multi-walled carbon nanotubes, or combinations thereof), graphene, or any combination of two or more thereof.

[0054] As previously discussed, in any embodiment of the LIB cathode formulation of this technology, as determined by radiocarbon analysis according to ASTM D6866-24, the LIB cathode formulation may exhibit a bio-based content of 0% to 100% of 3-amino-3-methyl-2-butanol. Therefore, in any embodiment of this invention, the LIB cathode formulation may exhibit a bio-based content of 0%, at least about 1%, at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35%, at least about 40%, at least about 45%, at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, about 100%, or any two of these values ​​and / or any range between any two of these values ​​(as determined by radiocarbon analysis according to ASTM D6866-24).

[0055] LIB negative electrode preparation The LIB anode formulation of this technology comprises a negative electrode active material. The negative electrode active material can be any negative electrode active material known in the art. In any embodiment, the negative electrode active material can be selected from the group consisting of lithium, graphite, silicon, or mixtures or composites thereof. Typically, the LIB anode formulation of this invention comprises about 5 wt% to about 90 wt% of a negative electrode active material, for example, about 5 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt%, 80 wt%, 85 wt%, or 90 wt%, or a range between and including any two of the foregoing values. For example, the composition may comprise about 20 wt.% to about 70 wt% or about 40 wt% to about 80 wt% of a negative electrode active material.

[0056] The LIB anode formulation of this technology may contain a solvent (acting as a dispersant). The solvent may be water and / or any suitable polar organic solvent known in the art, such as those with a dielectric constant of at least 15, for example, 15, 20, 25, 30, 35, 40, 45 or greater, or values ​​between and including any two of the foregoing values. Some non-limiting examples of suitable solvents include certain ketones, amides, nitriles, and sulfoxides, such as methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidine (NMP), acetonitrile, and dimethyl sulfoxide. In any embodiment, the solvent may be NMP. The LIB anode formulation of this technology may contain about 0.1 wt% to about 99 wt% of solvent. Therefore, suitable amounts include any one of about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, 90 wt%, 95 wt%, 96 wt%, 97 wt%, 98 wt%, or 99 wt%, or a range between and including any two of the foregoing values. In any embodiment, the amount of solvent can be from about 10 wt% to about 99 wt%, or from about 20 wt% to about 95 wt%, or even from about 30 wt% to about 90 wt%.

[0057] The LIB negative electrode formulation of this technology may contain a component that acts as a dispersant. Suitable dispersants may include polymeric dispersants such as polyvinylpyrrolidone (PVP), polyacrylic acid, polyacrylate, polyacrylamide, polyphosphate, polyphosphate, etc. Suitable amounts include any one of about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, or a range between and including any two of the foregoing values. In any embodiment, the amount of dispersant may be from about 0.1 wt% to about 10 wt%, or from about 0.1 wt% to about 5 wt%, or even from about 0.1 wt% to about 3 wt%.

[0058] The LIB negative electrode formulation of this technology may also include a polymer binder. Suitable polymer binders include polyvinylidene fluoride, styrene-butadiene copolymer (SBR), carboxymethyl cellulose (CMC), polyacrylate latex, or any mixture of two or more thereof. For example, the polymer binder may be CMC or SBR and the solvent may be water.

[0059] In any embodiment, the LIB negative electrode formulation of this technology may further include a conductive agent. "Conductive agent" refers to any chemical substance or substance that increases the conductivity of the electrode (including the negative electrode of the LIB). In any embodiment, the conductive agent may be selected from the group consisting of: carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, carbon nanotubes, graphene, or any combination of two or more thereof.

[0060] As previously discussed, in any embodiment of the LIB anode formulation of this technology, as determined by radiocarbon analysis according to ASTM D6866-24, the LIB anode formulation may exhibit a bio-based content of 0% to 100% of 3-amino-3-methyl-2-butanol. Therefore, in any embodiment of this invention, the LIB anode formulation may exhibit a bio-based content of 0%, at least about 1%, at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35%, at least about 40%, at least about 45%, at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, about 100%, or any two of these values ​​and / or any range between any two of these values ​​(as determined by radiocarbon analysis according to ASTM D6866-24).

[0061] Lithium-ion battery (LIB) separator formulation The LIB separator formulation of this technology may contain a polymer that can be used to form the LIB separator. The separator polymer can be any separator polymer known in the art. In any embodiment, the separator polymer may be selected from the group consisting of polyethylene, polypropylene, poly(vinylidene fluoride), polyamide, polyethylene oxide, or any combination or copolymer of any two or more thereof. Typically, the LIB separator formulation of this invention contains about 5 wt% to about 90 wt% of the separator polymer, for example, about 5 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt%, 80 wt%, 85 wt%, or 90 wt% of the separator polymer, or a range between and including any two of the foregoing values. For example, the composition may contain about 5 wt.% to about 50 wt% or about 50 wt% to about 20 wt% of the separator polymer.

[0062] The LIB separator formulation of this technology may contain a solvent (acting as a dispersant). The solvent may include any suitable polar organic solvent known in the art, such as those with a dielectric constant of at least 15, for example, 15, 20, 25, 30, 35, 40, 45 or greater, or a range between and including any two of the foregoing values. Some non-limiting examples of suitable solvents include certain ketones, amides, nitriles, and sulfoxides, such as methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidine (NMP), acetonitrile, and / or dimethyl sulfoxide. In any embodiment, the solvent may be NMP. The LIB separator formulation of this technology may contain from about 0.1 wt% to about 99 wt% of solvent. Therefore, suitable amounts include any one of about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, 90 wt%, 95 wt%, 96 wt%, 97 wt%, 98 wt%, or 99 wt%, or a range between and including any two of the foregoing values. In any embodiment, the amount of solvent can be in the range of about 10 wt% to about 99 wt%, or about 20 wt% to about 99 wt%.

[0063] The LIB formulations of this technology may include a solvent, 3-amino-3-methyl-2-butanol mixed into the solvent, and ceramic material particles dispersed in the mixture. These formulations can be used to coat LIB separators with a ceramic coating to improve the safety of the separators. Non-limiting examples of ceramics may include aluminum oxide hydroxide (e.g., boehmite having the formula γ-AlO(OH)), α-Al2O3, and SiO2.

[0064] The LIB separator formulation of this technology may contain a component that acts as a dispersant. Suitable dispersants may include polymeric dispersants such as polyvinylpyrrolidone (PVP), polyacrylic acid, polyacrylate, polyacrylamide, polyphosphate, polyphosphate, etc. Suitable amounts include any one of about 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, or a range between and including any two of the foregoing values. In any embodiment, the amount of dispersant may be from about 0.1 wt% to about 10 wt%, or from about 0.1 wt% to about 5 wt%, or even from about 0.1 wt% to about 3 wt%.

[0065] As previously discussed, in any embodiment of the LIB separator formulation of this technology, the LIB separator formulation may exhibit a bio-based content of 0% to 100% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24. Therefore, in any embodiment of this invention, the LIB separator formulation may exhibit a bio-based content of 0%, at least about 1%, at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35%, at least about 40%, at least about 45%, at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, about 100%, or any two of these values ​​and / or any range between any two of these values ​​(as determined by radiocarbon analysis according to ASTM D6866-24).

[0066] Compositions containing 3-amino-3-methyl-2-butanol for use in semiconductor devices On the other hand, this technology provides compositions comprising 3-amino-3-methyl-2-butanol for use in semiconductor materials and devices. Specifically, this technology provides compositions that can be used as cleaning formulations in the manufacture of semiconductor materials and devices. The compositions can be solutions, dispersions, slurries, or pastes. For example, the compositions described herein may contain solvents and additives (e.g., 3-amino-3-methyl-2-butanol) intended for use in the fabrication of semiconductor devices (e.g., diodes, transistors, integrated circuits, photonic devices, memory devices, or sensors). The compositions can be applied to the surface of semiconductor materials to increase the surface's hydrophilicity (e.g., by reducing contaminants). The compositions can be applied to the surface of semiconductor devices during manufacturing to remove particles and ensure the cleanliness of the semiconductor surface before further processing. For example, cleaning formulations can be applied to semiconductor substrates before and / or after chemical mechanical planarization to increase surface smoothness and reduce contaminants. As another example, cleaning formulations can be applied to silicon dioxide wafers to remove particles formed before and / or during cleaning and to obtain a precisely planarized and smooth, defect-free or substantially defect-free surface. As another example, cleaning formulations can be applied to aluminum metal surfaces to reduce surface contaminants. As yet another example, cleaning formulations can be used as chemical etchants for thin-film transistor (TFT) panels, wherein etchants containing 3-amino-3-methyl-2-butanol will have performance comparable to or better than etchants formulated without 3-amino-3-methyl-2-butanol. As yet another example, cleaning and stripping solutions for printed circuit boards (PCBs) can be formulated to contain 3-amino-3-methyl-2-butanol.

[0067] The compositions of this technology may contain a wide range of amounts of the additive described herein (i.e., 3-amino-3-methyl-2-butanol). For example, the composition may contain 3-amino-3-methyl-2-butanol in amounts from about 0.001 wt% to about 40 wt% of the total weight of the composition, such as from about 0.001 wt% to about 2 wt%, from about 0.01 wt% to about 1 wt%, from about 0.03 wt% to about 0.5 wt%, from about 0.05 wt% to about 0.3 wt%, from about 0.01 wt% to about 10 wt%, from about 0.05 wt% to about 8 wt%, from about 0.05 wt% to about 5 wt%, from about 0.05 wt% to about 3 wt%, from about 0.05 wt% to about 2 wt%, from about 0.5 wt% to about 10 wt%, or any value or subrange thereof. In some embodiments, the composition may comprise about 0.001 wt%, about 0.005 wt%, about 0.01 wt%, about 0.05 wt%, about 0.1 wt%, about 0.15 wt%, about 0.2 wt%, about 0.3 wt%, about 0.4 wt%, about 0.5 wt%, about 0.75 wt%, about 1 wt%, about 1.5 wt%, about 2 wt%, about 3 wt%, about 4 wt%, about 5 wt%, about 6 wt%, about 7 wt%, about 8 wt%, about 9 wt%, about 10 wt%, about 20 wt%, about 30 wt%, about 40 wt%, or any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may comprise about 0.05 wt% to about 0.3 wt% of additives based on the total weight of the composition.

[0068] The semiconductor cleaning formulations of this technology may contain a solvent. The solvent may be water or any suitable polar organic solvent known in the art, such as those with a dielectric constant of at least 15, for example, 15, 20, 25, 30, 35, 40, 45 or greater, or values ​​between and including any two of the foregoing values. Some non-limiting examples of suitable solvents include certain ketones, amides, nitriles, and sulfoxides, such as methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidine (NMP), acetonitrile, water (e.g., deionized water), certain glycol ethers, and / or dimethyl sulfoxide. In any embodiment, the solvent may be water, NMP, or a combination thereof. Semiconductor cleaning formulations may contain at least about 20 wt% of solvent, at least about 25 wt% of solvent, at least about 30 wt% of solvent, at least about 35 wt% of solvent, at least about 40 wt% of solvent, at least about 45 wt% of solvent, at least about 50 wt% of solvent, at least about 55 wt% of solvent, at least about 60 wt% of solvent, at least about 70 wt%, at least about 80 wt%, at least about 90 wt%, or any two of these values ​​and / or any range of solvents between any two of these values. In some embodiments, the composition may comprise about 10 wt% to about 99 wt%, about 20 wt% to about 99 wt%, about 35 wt% to about 97 wt%, about 45 wt% to about 95 wt%, about 50 wt% to about 95 wt%, about 50 wt% to about 90 wt%, about 80 wt% to about 98 wt%, or any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may comprise about 85 wt% to about 98 wt% of solvent.

[0069] As an example, a semiconductor cleaning formulation may contain about 0.001 wt% to about 40 wt% of 3-amino-3-methyl-2-butanol and about 10 wt% to about 99 wt% of a glycol ether. The glycol ether may be any glycol ether having a viscosity suitable for the semiconductor cleaning formulation. For example, the glycol ether may be butyl diethylene glycol, 2-(2-ethoxyethoxy)ethanol (also known as carbitol), or combinations thereof. In some embodiments, the semiconductor cleaning formulation may contain about 2 wt% to about 40 wt% of N-methylpyrrolidone. In some embodiments, the semiconductor cleaning formulation may contain about 2 wt% to about 60 wt% water.

[0070] Semiconductor cleaning compositions may contain one or more additional cleaning agents. Suitable cleaning agents may include etchants, agents for removing organic residues, and agents for removing particulate contaminants. These agents include oxidants (e.g., hydrogen peroxide or peroxyacid), oxalic acid, benzotriazole, quaternary ammonium salts (e.g., tetramethylammonium hydroxide), gallic acid, dodecylbenzenesulfonic acid, and / or hydroxylamine.

[0071] The semiconductor cleaning composition may contain additional reagents based on a total weight of the composition of about 0.005 wt% to about 40 wt%, such as about 0.01 wt% to about 40 wt%, about 2 wt% to about 40 wt%, about 5 wt% to about 40 wt%, about 10 wt% to about 40 wt%, about 20 wt% to about 40 wt%, about 30 wt% to about 40 wt%, about 0.05 wt% to about 8 wt%, about 0.05 wt% to about 5 wt%, about 0.05 wt% to about 3 wt%, about 0.05 wt% to about 2 wt%, about 0.01 wt% to about 1 wt%, about 0.5 wt% to about 10 wt%, or any value or subrange thereof. In some embodiments, the composition may comprise about 0.005 wt%, about 0.01 wt%, about 0.05 wt%, about 0.1 wt%, about 0.15 wt%, about 0.2 wt%, about 0.3 wt%, about 0.4 wt%, about 0.5 wt%, about 0.75 wt%, about 1 wt%, about 1.5 wt%, about 2 wt%, about 3 wt%, about 4 wt%, about 5 wt%, about 6 wt%, about 7 wt%, about 8 wt%, about 9 wt%, about 10 wt%, about 15 wt%, about 20 wt%, about 25%, about 30 wt%, about 35%, or about 40 wt%, or additional reagents including any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may contain additional reagents in amounts of about 2 wt% to about 40 wt%, about 0.05 wt% to about 2 wt%, about 0.2 wt% to about 2 wt%, or about 0.01 wt% to about 1 wt% based on the total weight of the composition.

[0072] The semiconductor cleaning composition may contain about 2 wt% to about 40 wt% oxalic acid. The semiconductor cleaning composition may contain about 0.01 wt% to about 1 wt% benzotriazole. The semiconductor cleaning formulation may contain about 0.01 wt% to about 1 wt% gallic acid. The semiconductor cleaning composition may contain about 0.05 wt% to about 2 wt% dodecylbenzenesulfonic acid.

[0073] Semiconductor cleaning compositions may have a pH of about 2 to about 11, such as about 3 to about 10, about 4 to about 10, about 2 to about 6, about 3 to about 5, about 8 to about 11, about 9 to about 10, or any value or subrange thereof. In some embodiments, the composition may have a pH of about 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10, 10.5, 11, or a pH including any two of these values ​​and / or any range between any two of these values. In some embodiments, the composition may have a pH of about 4.5 to about 9.5.

[0074] As previously discussed, in any embodiment of the semiconductor cleaning composition of this technology herein, the semiconductor cleaning composition may exhibit a bio-based content of 0% to 100% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24. Therefore, in any embodiment herein, the semiconductor cleaning composition may exhibit a bio-based content of 3-amino-3-methyl-2-butanol (determined by radiocarbon analysis according to ASTM D6866-24) of 0%, at least about 1%, at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35%, at least about 40%, at least about 45%, at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, about 100%, or any two of these values ​​and / or any range between any two of these values.

[0075] Method for manufacturing the composition Conductive film and battery composition The conductive film and battery compositions described herein can be manufactured using conventional film-forming or battery-manufacturing techniques well known to those skilled in the art. Typically, the compositions are manufactured via a three-step process. First, a solid component phase can be prepared by mixing solid powder components (e.g., electroactive materials and / or conductive materials). This part of the method aims to depolymerize the solid powders to form a uniformly dispersed state. In the second step of the manufacturing process, a solution of the liquid component can be prepared by mixing any liquid component (if present) in a solvent. In the third step of the manufacturing process, the mixed powders can be dispersed in the solution, and additional components (e.g., binders and dispersants) can be dissolved in the solution.

[0076] Additives (e.g., 3-amino-3-methyl-2-butanol) may be added to the composition in one or more of three different stages of the manufacturing process: added to a solid powder dispersion (milling), added to a binder dispersion, and / or finally added to the composition.

[0077] Semiconductor cleaning composition The semiconductor cleaning compositions described herein can be manufactured using conventional solution preparation techniques well known to those skilled in the art. Typically, the compositions are manufactured via a two-step process. First, additives and additional cleaning agents can be dissolved or dispersed in a solvent. In the second step, the pH of the solution can be adjusted to a predetermined value by adjusting the concentrations of the additives and additional cleaning agents in the solution.

[0078] Unless otherwise specified, a numerical range (e.g., "2 to 10") includes the numerical values ​​that define the range (e.g., 2 and 10).

[0079] Unless otherwise stated, ratios, percentages, parts, etc. are all by weight.

[0080] This document provides embodiments to illustrate the advantages of the present technology and further assist those skilled in the art in preparing or using compositions of the present technology. The embodiments presented herein are also intended to illustrate the present technology more fully. The embodiments should not be construed as limiting the scope of the present technology, which is defined by the appended claims. The embodiments may include or incorporate any variations, aspects, or aspects of the present technology described above. The aforementioned variations, aspects, or aspects may also each further include or incorporate any and all other variations or aspects of the present technology.

[0081] Example General information The IUPAC names and abbreviations of the compounds tested in this article are provided below. Example 1. Synthesis of renewable bio-based 3-amino-3-methyl-2-butanol Synthesis of renewable 2-nitropropane (2NP). Titanium silicate molecular sieve-1 (5.0 g, TS-1, ACS material), bio-based acetone (29 g, 0.5 mol, Millipore Sigma), and 10% ammonia (170.3 g, 1.0 mol) were placed in a 3-necked flask equipped with a condenser. The mixture was heated to 60–65°C, and then 35% aqueous hydrogen peroxide solution (145.7 g, 1.5 mol) was added dropwise over a 2-hour period while maintaining the internal temperature of the reaction mixture below 70°C. After the addition of hydrogen peroxide, the mixture was maintained at 65°C for 2–4 hours until all intermediate oximes reacted according to GC. The reaction mixture was cooled to room temperature and filtered. 2NP was separated from the aqueous layer using a separatory funnel and then dried using anhydrous sodium sulfate. The separation yield of 2NP was 75%, with a purity of 97%.

[0082] Synthesis of renewable 3-nitro-3-methyl-2-butanol (NMB) and renewable 3-amino-3-methyl-2-butanol (AMB). 2-Nitropropane (1 mol, 97%, from the previous step) and bioacetaldehyde (1 mol, 99%, Millipore Sigma) were added to triethylamine (0.02 mol, Millipore Sigma) in methanol while maintaining the temperature below 50°C. The mixture was stirred overnight at ambient temperature. GC-FID analysis showed a conversion of 91% from 2NP to NMB. The reaction mixture was then fed into a stainless steel reactor containing Raney nickel (10 wt%) and methanol at 50–80°C under 650 psi hydrogen. After complete reaction, the mixture was separated from the catalyst and distilled at ambient pressure. The fraction containing the desired product was collected at 158–162°C and recovered as a colorless liquid. The separation yield was 70%, and the purity was 96% according to GC-FID analysis (capillary column: 30 m fused silica, (5% phenyl)-methylpolysiloxane bonded phase column, inner diameter 0.25 mm and film thickness 1.0 μm; carrier gas flow rate: 1 mL / min helium; gas chromatograph: Agilent model 7890, series II).

[0083] Example 2. Purification and dilution of 3-amino-3-methyl-2-butanol A portion of the product from Example 1 was crystallized from diethyl ether, providing a purity of 99.6%. A dilution was prepared by mixing AMB with deionized water at 40°C. The resulting solution was cooled until the sample solidified. Table 1 below shows the melting point data for AMB samples at different purity levels and dilutions. Sample A is the distillation product of Example 1. Sample B is Sample A with water. Sample C is the crystalline form of the product from Example 1. Sample D is Sample C with water. Higher impurity and water content results in lower melting points.

[0084] Table 1. Properties of 3-amino-3-methyl-2-butanol with different purities and moisture contents Example 3 – Dispersing Multiwalled Carbon Nanotubes in NMP using AMB Multi-walled carbon nanotube (MWCNT) dispersions with the formulations shown in Tables 2 and 3 were prepared, and the viscosity and stability of the dispersions were tested. To form the formulations, dispersant AMB or AMP and NMP solvent were added to a beaker, followed by the addition of MWCNTs. The resulting mixture was mixed at 1500 rpm for 10 minutes. The mixture was then mixed using a handheld homogenizer (IKA T18) at 23000 rpm for 5 minutes. Viscosities were measured using a viscometer (Brookfield DV2T) at 6 rpm and 60 rpm.

[0085] Figure 1 Viscosity test results of formulations of multi-walled carbon nanotube (MWCNT) dispersions in N-methyl-2-pyrrolidone (NMP) solvent using different dispersants are provided. Figure 2 Viscosity test results are provided for additional formulations of multi-walled carbon nanotube (MWCNT) dispersions in N-methyl-2-pyrrolidone (NMP) solvent using different dispersants. Figure 1 The results shown indicate that AMB performs better than AMP and is significantly better than dispersant BYK163 (a polyurethane). Figure 2 The results shown indicate that AMB performs similarly to AMP.

[0086] In Examples 3-9, “sample X” (where X is a number from 1 to 10) refers to a composition containing AMB, and “composition Y” (where Y is a number from 1 to 16) refers to a comparative composition that does not contain AMB.

[0087] Table 2. MWCNTs (BET 160 m) dispersed in NMP by different dispersants and / or co-dispersants 2 The preparation of / g). Table 3. MWCNTs (BET 300 m) dispersed in NMP by different dispersants and / or co-dispersants 2 The preparation of / g). Example 4. Dispersing multi-walled carbon nanotubes in water using AMB Multi-walled carbon nanotube (MWCNT) dispersions with the formulations shown in Tables 4 and 5 were prepared, and the viscosity and stability of the dispersions were tested.

[0088] To form the formulation, dispersant AMB or AMP and water were added to a beaker, followed by the addition of multi-walled carbon nanotubes (MWCNTs). The resulting mixture was mixed at 1500 rpm for 10 minutes. The mixture was then mixed using a handheld homogenizer (IKA T18) at 23000 rpm for 5 minutes. Viscosity was measured using a viscometer (Brookfield DV2T) at 6 rpm and 60 rpm. Particle size analysis was performed using a laser diffraction particle size analyzer (Malvern 3000 Mastersizer) after ultrasonic treatment. The results are shown in Table 5.

[0089] Figure 3 Viscosity test results are provided for additional formulations of multi-walled carbon nanotube (MWCNT) dispersions in water using different dispersants. Figure 3 The results shown indicate that AMB performs similarly to AMP.

[0090] Table 4. MWCNTs (BET 160 m) dispersed in water by different dispersants and / or co-dispersants 2 The preparation of / g). Table 5. MWCNTs in water using different dispersants and / or co-dispersants (BET 160 m) 2 / g) Particle size of the dispersion. Example 5 – Lithium iron phosphate slurry for lithium-ion batteries Slurry dispersions of lithium iron phosphate (LiFePO4, LFP) cathode material with formulations shown in Table 6 were prepared using AMP and AMB. Formulations 11 and 12 contained AMP as a dispersant, while sample 4 contained AMB as a dispersant. The viscosity and slurry stability of all formulations were tested. To form the formulations, polyvinylidene fluoride (PVDF) was dissolved in NMP solvent at a concentration of approximately 5 wt%. MWCNT slurry, supplied by Shanghai Haiyi Scientific & Trade Co., had 6.25% solids in NMP solvent. The dispersant, LFP, NMP, 6.25% MWCNT slurry, and PVDF from the pre-prepared NMP solution were weighed into plastic containers. The mixture was then mixed for 2 minutes at 2000 rpm using a planetary centrifuge (Thinky ARE 310). The mixture was further mixed for 5 minutes at 23000 rpm using a handheld homogenizer (IKA T18). The solids weight ratio of LFP:MWCNT:PVDF was 96:1:3. This solids weight ratio is based on the solids in the slurry, not the total weight. The total weight percentage of solids in the resulting slurry was 52 wt%. Viscosity was measured using a viscometer (Brookfield DV2T) at 6 rpm and 60 rpm.

[0091] Tables 7 and 8 summarize the results obtained from tests conducted at 6 rpm and 60 rpm, respectively. The results indicate that the dispersants AMB and AMP in the LFP slurry resulted in lower and more stable viscosity compared to slurries without dispersants and the commercially available product HA-01DS. AMB performed similarly to AMP and improved the dispersibility of the LFP slurry by resulting in lower viscosity.

[0092] Table 6. LFP electrode pastes with AMP and AMB Table 7. Viscosity of LFP electrode slurry at 6 rpm Table 8. Viscosity of LFP electrode paste at 60 rpm Example 6 – Lithium manganese iron phosphate slurry for lithium-ion batteries Lithium manganese iron phosphate (LiMnFePO4) with the formulations shown in Table 9 was prepared using AMP and AMB. x Fe (1-x)A slurry dispersion of PVDF (LMFP) was prepared. The viscosity and slurry stability of all formulations were tested. PVDF was dissolved in NMP solvent to prepare a solution with 5 wt% PVDF in NMP. The MWCNT slurry, supplied by Shanghai Haiyi Scientific & Trade Co., had 6.25% solids in NMP solvent. A measured amount of dispersant, LMFP, NMP, 6.25% MWCNT slurry, and PVDF from the NMP solution were weighed into a plastic container. The mixture was then mixed using a planetary centrifuge (Thinky ARE 310) at 2000 rpm for 5 minutes. The mixture was further mixed using a hand-held homogenizer (IKA T18) at 23000 rpm for 5 minutes. The solids weight ratio of LMFP:MWCNT:PVDF was 96:1:3. The solids weight ratio is based on the solids in the slurry, not the total weight. The total weight percentage of solids in the resulting slurry was 50 wt%. Viscosity was tested using a viscometer (Brookfield DV2T) at 6 rpm and 60 rpm.

[0093] The results are summarized in Tables 10 and 11. The results indicate that using AMB or AMP as a dispersant in LMFP slurries resulted in lower and more stable viscosity compared to compositions without a dispersant and compositions containing the commercially available product HA-01DS from Hongxing Materials. AMB performed similarly to AMP and improved the dispersibility of the LMFP slurry by resulting in lower viscosity.

[0094] Table 9. LMFP cathode slurry with different co-dispersants Table 10. Viscosity of LMFP electrode slurry at 6 rpm Table 11. Viscosity of LMFP electrode slurry at 60 rpm Example 7. AMB-containing cleaning and stripping solution for cleaning printed circuit boards. Cleaning and stripping solutions for printed circuit boards (PCBs) can be formulated as shown in Table 12. These solutions are expected to have performance comparable to or better than solutions formulated with AMP.

[0095] Table 12. Cleaning (LL) and Stripping (MM) Formulations Example 8. AMB-containing chemical etchant for thin-film transistor (TFT) panels Chemical etchants for TFT panels can be readily prepared using the components shown in Table 13. Etches containing AMB are expected to have performance comparable to or better than etchants formulated with AMP.

[0096] Table 13. Chemical Etching Agent Formulations Example 9. Chemical Mechanical Polishing (CMP) Post-Chemical Mechanical Polishing (CMP) Cleaning Formulation Containing AMB The post-CMP cleaning formulation was prepared using the components shown in Table 14. The formulation has a pH of approximately 9.5.

[0097] Table 14. Post-CMP Cleaning Preparations Silicon wafers were treated with different cleaning formulations listed in Table 14 and then characterized using dynamic contact angle measurements and particle removal efficiency. The results were compared with those of wafers cleaned with SC-1 (Standard Clean 1). SC-1 is a standard cleaning solution used in the semiconductor industry, particularly in post-CMP cleaning. SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide, and deionized water at pH 9.5.

[0098] The dynamic contact angle was measured using the following procedure: 15 μL droplets of each cleaning solution (1000 µM concentration, pH 9.5) were transferred to a clean, bare TEOS wafer surface, while simultaneously recording a 10-second video (240 fps) using a CASIO Exilim HS EX-ZR700 camera. The video was then uploaded to FrameShots software, where it was segmented into images at 0.5-second intervals. The images were uploaded to Fiji (ImageJ) software to measure the contact angle using the Drop Analysis-LB-ADSA plugin. The measured angle was then normalized relative to the initial contact angle (t=0 sec). Error analysis – Dynamic Contact Angle (TEOS): ±1.6º.

[0099] Figure 4 This is a graph showing the dynamic contact angle measurement results of silicon wafers treated with different semiconductor cleaning solutions for different cleaning times. Figure 4 The data is also shown in Table 15. Figure 4 The data shows that wafers cleaned with formulations containing AMB have lower contact angles than wafers treated with SC-1. Furthermore, the contact angle measurements of wafers treated with the AMB formulation decreased with increasing cleaning time, while the contact angle measurements of wafers treated with SC-1 and AMP remained stable. This indicates that AMB is more effective in cleaning and making surfaces more hydrophilic (i.e., more wettable), which benefits the overall quality and performance of the wafers in subsequent processing steps.

[0100] Table 15. Normalized dynamic contact angles of TEOS wafers after cleaning with different cleaning solutions Example 10. Cleaning after chemical mechanical polishing (CMP) using a PVA brush test To prepare samples, 1x1” TEOS silicon wafers were immersed three times in a 1.0 wt% CeO2 nanoparticle dispersion at pH 5.6. Subsequently, they were immersed three more times in deionized water at pH 5.6 to remove loosely bound particles. After dip-coating, the wafers were dried using compressed air. The coated TEOS wafers were then imaged at nine different locations on each wafer using a JCM 7000 Neoscope Benchtop SEM (3500x zoom, low vacuum, high probe current, BED-S signal, 10.0 kV landing voltage, 12.5 working distance, slow scan, 5120×3840 images).

[0101] Different cleaning formulations were treated using either contact or non-contact cleaning modes. Contact cleaning was performed as follows. The coated wafer was cleaned using a 3-inch segment of a polyvinyl alcohol (PVA) brush (H3FEN). The brush segment was attached to a 3D printing assembly attached to a motor, which rotated the brush at 300 rpm and 0.3 g pressure. During wafer cleaning, fresh cleaning solution (1000 µM, pH 9.5) was supplied to the brush via a peristaltic pump at 75.0 mL / min. The cleaned TEOS wafer was then imaged by SEM at the same nine locations on the wafer as described above.

[0102] Non-contact cleaning was performed using a megasonic reactor bowl. The coated TEOS sample was immersed in a megasonic reactor (Bowl Meg®, Prosys Inc) containing 250 mL of each cleaning solution and treated with 60 W for 1 minute. Fresh cleaning chemicals (1000 µM amino alcohol concentration) were supplied between tests to avoid recontamination.

[0103] SEM images were analyzed using Fiji (ImageJ) software to quantify particles on the surface. The particle removal efficiency at each location on the wafer was calculated as follows: Among them, counting W =Wafer particle count, count D =Dirty wafer particle count Figure 5This is a graph showing the particle removal efficiency of surfaces treated with different semiconductor cleaning solutions compared to water. Figure 5 The data are reproduced in Table 16. Particle removal efficiency was measured to determine the ability of the post-CMP cleaning solution to remove cerium dioxide particles from the substrate. The pH of all cleaning solutions was 9.5. Figure 5 This indicates that, based on the percentage of particulate removal efficiency (PRE), AMB demonstrates cleaning performance comparable to or better than AMP. The results show that, based on the percentage of particulate removal efficiency (PRE), AMB outperforms AMP in cleaning performance.

[0104] Table 16: Particle removal efficiency (%) of different cleaning solutions Figure 6 This is a graph showing the particle removal efficiency of surfaces treated with different semiconductor cleaning solutions using contact and non-contact modes. Particle removal efficiency was measured to determine the ability of the cleaning solution to remove cerium dioxide particles from the substrate after CMP. All cleaning solutions had a pH of 9.5. Figure 6 This indicates that, based on the percentage of particle removal efficiency (PRE), AMB demonstrates cleaning performance comparable to or better than AMP. The results show that, based on the percentage of particle removal efficiency (PRE), AMB outperforms AMP in cleaning effectiveness.

[0105] Example 11. Cleaning of aluminum metal surfaces using different cleaning solutions Contact angle analysis was performed on bare aluminum samples using cleaning solutions (AMB and AMP) of various concentrations. A 15 μL droplet of each cleaning chemical at pH 9.5 was transferred to a clean, bare aluminum sample surface, and a 5-second video (240 fps) was captured using a CASIO ExilimHS EX-ZR700 camera. The video was then uploaded to FrameShots software, where it was segmented into images at 0.5-second intervals. The images were uploaded to Fiji (ImageJ) software to measure only the initial contact angle (t=0 sec) using the DropAnalysis-LB-ADSA plugin.

[0106] In addition, bare aluminum samples were immersed in each cleaning chemical (1000 µM, pH 9.5) for 10 minutes and dried at 140 °F using a dehydrator. 15 µL of deionized water (pH 5.6) was dropped onto the immersed aluminum surface while a 15-second video (240 fps) was captured using a CASIOExilim HS EX-ZR700 camera. The video was then uploaded to FrameShots software, where it was segmented into images at 1-second intervals. The images were uploaded to Fiji (ImageJ) software to measure the contact angle over 10 seconds using the DropAnalysis-LB-ADSA plugin. These angles were then normalized relative to the initial contact angle (t=0 sec).

[0107] The normalized average contact angles after cleaning with cleaning solutions ranging from 0.5 M to 2 M are shown below. Figure 7 middle. Figure 7 The data is reproduced in Table 17. Figure 7 The inset shows a photograph of the droplet used for contact angle measurement. The results indicate that at concentrations of 0.25 M or higher, AMB reduces the contact angle to a greater extent than AMP.

[0108] Table 17. Average normalized contact angle measurements of aluminum and cleaning solution concentration After cleaning with the cleaning solution for up to 10 seconds, the normalized average contact angle is shown in the figure. Figure 8 middle. Figure 8 The data are reproduced in Table 18. The results show that, at all cleaning times, AMB reduced the contact angle to a greater extent than AMP.

[0109] Table 18. Measurements of the average normalized contact angle of aluminum over time. equivalent While certain embodiments have been described and illustrated, those skilled in the art, upon reading the foregoing specification, can make changes, equivalent substitutions, and other modifications to the composition of the technology set forth herein. Each aspect and embodiment described above may also include or incorporate such changes or aspects disclosed with respect to any or all other aspects and embodiments.

[0110] This technology is not limited to the specific aspects described herein, which are intended as separate illustrations of various aspects of this technology. It will be apparent to those skilled in the art that many modifications and variations can be made to this technology without departing from its spirit and scope. In addition to the methods listed herein, functionally equivalent methods within the scope of this technology will be apparent to those skilled in the art based on the foregoing description. Such modifications and variations are intended to fall within the scope of the appended claims. It should be understood that this technology is not limited to specific methods, reagents, compounds, or compositions, which can, of course, be varied. It should also be understood that the terminology used herein is for the purpose of describing particular aspects only and is not intended to be limiting. Therefore, this specification is intended to be considered merely exemplary, and the breadth, scope, and spirit of this technology are indicated only by the appended claims, the definitions therein, and any equivalents thereof.

[0111] The embodiments described illustratively herein can be suitably implemented without any or more of the elements or limitations specifically disclosed herein. Therefore, terms such as “comprising,” “containing,” and “including” should be interpreted broadly and without limitation. Furthermore, the terms and expressions used herein are used as descriptive rather than restrictive terms, and their use is not intended to exclude any equivalents of the features shown and described or portions thereof, but it should be recognized that various modifications are possible within the scope of the claimed technology. Moreover, the phrase “consistent primarily of…” will be understood to include those specifically listed elements and additional elements that do not substantially affect the essential and novel features of the claimed technology. The phrase “consisting of…” does not include any unspecified elements.

[0112] Furthermore, where features or aspects of this disclosure are described in accordance with the Markush group, those skilled in the art will recognize that this disclosure is also described in accordance with any individual member or subgroup of the Markush group. Each narrower species and subgenus falling within the general scope of the disclosure also constitutes part of this technology. This includes a general description of the technology, with accompanying conditions or negative limitations removing any subject matter from that class, regardless of whether the removed material is specifically described herein.

[0113] As those skilled in the art will understand, for any and all purposes, particularly in providing a written description, all scopes disclosed herein also include any and all possible subscopes and combinations thereof. Any listed scope can be readily considered adequately descriptive and capable of being decomposed into at least equal halves, thirds, quarters, fifths, tenths, etc. As a non-limiting example, each scope discussed herein can be readily decomposed into a lower third, a middle third, and an upper third, etc. Those skilled in the art will also understand that all language, such as “at most,” “at least,” “greater than,” “less than,” etc., includes the listed numbers and refers to scopes that can subsequently be decomposed into subscopes as described above. Finally, those skilled in the art will understand that a scope includes each individual member.

[0114] All publications, patent applications, granted patents, and other documents (e.g., journals, articles, and / or textbooks) mentioned in this specification are incorporated herein by reference as if each individual publication, patent application, granted patent, or other document were specifically and individually indicated to be incorporated herein by reference in its entirety. Definitions contained in the text incorporated by reference are excluded to the extent that they conflict with definitions in this disclosure.

[0115] This technology may include, but is not limited to, the features and combinations of features listed in the following paragraphs. It should be understood that the following paragraphs should not be construed as limiting the scope of the appended claims or requiring that all such features must necessarily be included in these claims: A. A composition comprising a solvent in a weight ratio of 300:1 to about 1:300 and 3-amino-3-methyl-2-butanol, optionally wherein the composition shows a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol as determined by radiocarbon analysis according to ASTM D6866-24, optionally wherein the solvent is a non-aqueous solvent.

[0116] B. The composition of paragraph A, comprising a solvent in a weight ratio of 2:1 to about 1:2 and 3-amino-3-methyl-2-butanol.

[0117] C. The composition of paragraph A or paragraph B, wherein the solvent comprises methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidine (NMP), acetonitrile, dimethyl sulfoxide, or a combination of two or more thereof, optionally wherein the solvent is a non-aqueous solvent.

[0118] D. The composition of paragraph A, comprising about 40 wt% to about 99 wt% of a solvent and about 0.01 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol.

[0119] E. A composition of any one of paragraphs A and D, further comprising a conductive material, a semiconductor material, or a combination thereof.

[0120] F. The composition of paragraph E, which contains about 5 wt% to about 90 wt% of conductive material.

[0121] G. A composition of paragraph E or paragraph F, wherein the conductive material includes a lithium-ion battery cathode material.

[0122] H. The composition of paragraph G, wherein the lithium-ion battery cathode material includes lithium iron phosphate, lithium manganese iron phosphate, lithium nickel manganese cobalt oxide, lithium cobalt oxide, lithium nickel oxide, lithium manganese oxide, lithium nickel cobalt aluminum oxide, lithium titanate, or any combination of two or more thereof.

[0123] I. A composition of paragraph G or paragraph H, wherein the lithium-ion battery cathode material comprises about 20 wt% to about 70 wt% of lithium iron phosphate.

[0124] J. The composition of paragraph G or paragraph H, wherein the lithium-ion battery cathode material comprises about 40 wt% to about 80 wt% of nickel cobalt aluminum oxide.

[0125] K. A composition of paragraph E or paragraph F, wherein the conductive material includes a lithium-ion battery negative electrode material.

[0126] L. The composition of paragraph K, wherein the lithium-ion battery negative electrode material includes graphite, lithium, silicon, or any combination of two or more thereof.

[0127] The composition of any one of paragraphs M and AL comprises about 40 wt% to about 60 wt% of a solvent and about 0.05 wt% to about 5 wt% of 3-amino-3-methyl-2-butanol.

[0128] The composition of any one of paragraphs N and AM, comprising about 0.1 wt% to about 3 wt% of 3-amino-3-methyl-2-butanol.

[0129] O. A composition of any one of paragraphs EN, wherein the conductive material includes conductive carbon.

[0130] The composition of paragraph O comprises about 80 wt% to about 98 wt% of a solvent and about 0.5 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol.

[0131] Q. A composition of paragraph O or paragraph P, wherein the conductive carbon material includes single-walled carbon nanotubes, multi-walled carbon nanotubes, carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, graphene, or any combination of two or more thereof.

[0132] The composition of any one of paragraphs AQ in R, further comprising a lithium-ion battery separator polymer.

[0133] S. The composition of paragraph R, wherein the lithium-ion battery separator polymer includes polyethylene, polypropylene, poly(vinylidene fluoride), polyamide, polyethylene oxide, or any combination or copolymer of any two or more thereof.

[0134] The composition of any one of paragraphs A, wherein the composition further comprises an amino alcohol other than 3-amino-3-methyl-2-butanol (“other amino alcohols”).

[0135] The composition of paragraph T, wherein the other amino alcohol is 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof.

[0136] V. A composition of paragraph T or paragraph U, wherein the composition comprises about 0.01 wt% to about 5 wt% of other amino alcohols.

[0137] W. A composition of any one of paragraphs TV, wherein other amino alcohols include 3-(ethylamino)-3-methylbut-2-ol.

[0138] X. A method for preparing a composition according to any one of paragraphs AW, the method comprising combining 3-amino-3-methyl-2-butanol of a purity of at least 95 wt% with a sufficient amount of non-aqueous solvent to provide the composition.

[0139] Y. Paragraph X's method, wherein the method further includes mixing the combined 3-amino-3-methyl-2-butanol with a non-aqueous solvent until a homogeneous solution is obtained.

[0140] Z. A lithium-ion battery electrode slurry comprising a conductive material, a solvent, and 3-amino-3-methyl-2-butanol, optionally wherein the lithium-ion battery electrode slurry exhibits a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24.

[0141] AA. Paragraph Z of the lithium-ion battery electrode slurry, which contains about 40 wt% to about 99 wt% of solvent and about 0.01 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol.

[0142] The lithium-ion battery electrode slurry of paragraph Z contains about 40 wt% to about 60 wt% of solvent and about 0.05 wt% to about 5 wt% of 3-amino-3-methyl-2-butanol.

[0143] AC. Paragraph Z of the lithium-ion battery electrode slurry, which contains about 0.1 wt% to about 3 wt% of 3-amino-3-methyl-2-butanol.

[0144] The lithium-ion battery electrode slurry of any one of paragraphs Z-AC, comprising about 5 wt% to about 90 wt% of conductive material.

[0145] AE. Lithium-ion battery electrode paste of any one of paragraphs A-AD, wherein the conductive material includes lithium-ion battery cathode material.

[0146] AF. Paragraph AE Lithium-ion battery electrode slurry, wherein the lithium-ion battery cathode material includes lithium iron phosphate, lithium manganese iron phosphate, lithium nickel manganese cobalt oxide, lithium cobalt oxide, lithium nickel oxide, lithium manganese oxide, lithium nickel cobalt aluminum oxide, lithium titanate, or any combination of two or more thereof.

[0147] AG. Paragraph AF lithium-ion battery electrode slurry, wherein the lithium-ion battery cathode material comprises about 20 wt% to about 70 wt% of lithium iron phosphate.

[0148] AH. Segment AF Lithium-ion battery electrode slurry, wherein the lithium-ion battery cathode material contains approximately 40 wt% to approximately 80 wt% of nickel cobalt aluminum oxide.

[0149] AI. Lithium-ion battery electrode paste of any one of paragraphs Z-AD, wherein the conductive material includes lithium-ion battery anode material.

[0150] AJ. Paragraph AI's lithium-ion battery electrode paste, wherein the lithium-ion battery anode material includes graphite, lithium metal, silicon, or any combination of two or more thereof.

[0151] AK. Lithium-ion battery electrode paste of any one of paragraphs Z-AJ, which further comprises a polymer binder.

[0152] AL. Paragraph AK's lithium-ion battery electrode paste, wherein the polymer binder includes polyvinylidene fluoride, styrene-butadiene copolymer, carboxymethyl cellulose, polyacrylate latex, or any two or more mixtures thereof.

[0153] AM. Paragraph AL lithium-ion battery electrode slurry, wherein the polymer binder is styrene-butadiene copolymer or carboxymethyl cellulose.

[0154] AN. Lithium-ion battery electrode paste of any one of paragraphs Z-AM, which also contains conductive carbon.

[0155] AO. Paragraph AN refers to lithium-ion battery electrode pastes, wherein the conductive carbon material includes single-walled carbon nanotubes, multi-walled carbon nanotubes, carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, graphene, or any combination of two or more thereof.

[0156] AP. Lithium-ion battery electrode slurry of any one of paragraphs Z-AO, wherein the solvent includes N-methyl-2-pyrrolidone or water.

[0157] AQ. A method for preparing a lithium-ion battery electrode slurry of any one of paragraphs Y-AO, the method comprising combining 3-amino-3-methyl-2-butanol of a purity of at least 95 wt% with a sufficient solvent and a sufficient conductive material to provide a composition.

[0158] The method described in paragraph AQ of AR, wherein the method further includes mixing the combined 3-amino-3-methyl-2-butanol, the conductive material and the solvent until a homogeneous slurry is obtained.

[0159] AS. A composition comprising: The polymer comprises about 5 wt% to about 30 wt% of polyethylene, polypropylene, poly(vinylidene fluoride), polyamide, polyethylene oxide, polypropylene oxide or any combination or copolymer of any two or more thereof. about 0.01 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol; and Solvent; Optionally, the composition exhibits a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24.

[0160] Compositions of paragraph AS, wherein the polymer comprises a copolymer of polyethylene oxide and polypropylene oxide.

[0161] AU. Compositions of paragraph AS or paragraph AT, wherein the solvent comprises N-methyl-2-pyrrolidone.

[0162] AV. A method for preparing a composition of any one of paragraphs AS to AU, the method comprising combining 3-amino-3-methyl-2-butanol of a purity of at least 95 wt% with a sufficient polymer and a sufficient solvent to provide the composition.

[0163] AW. Paragraph AV method, wherein the method further includes mixing the combined 3-amino-3-methyl-2-butanol, polymer and solvent until a homogeneous solution is obtained.

[0164] AX. A composition comprising conductive carbon, a solvent and 3-amino-3-methyl-2-butanol, optionally wherein the composition exhibits a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24.

[0165] The composition of paragraph AX, wherein the conductive carbon includes single-walled carbon nanotubes, multi-walled carbon nanotubes, carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, graphene, or any combination of two or more thereof.

[0166] Compositions of paragraphs AZ, AX, or AY, comprising 0.2 wt% to 20 wt% conductive carbon and about 0.2 wt.% to about 20 wt.% 3-amino-3-methyl-2-butanol.

[0167] BA. A composition comprising: 3-Amino-3-methyl-2-butanol, about 0.001 wt% to about 40 wt%; and Diol ethers of about 10 wt% to about 99 wt%; Optionally, the composition exhibits a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24.

[0168] Compositions of paragraph BA, wherein the glycol ethers include butyl diethylene glycol, 2-(2-ethoxyethoxy)ethanol, or combinations thereof.

[0169] Compositions of paragraphs BA or BB, further comprising about 2 wt% to about 40 wt% of N-methylpyrrolidone.

[0170] BD. A composition of any one of paragraphs BA to BC, further comprising about 2 wt% to about 60 wt% water.

[0171] BE. A composition comprising: 3-Amino-3-methyl-2-butanol, about 0.001 wt% to about 40 wt%; Oxidizing agent of about 5 wt% to about 40 wt%; and Approximately 50 wt% to approximately 90 wt% water; Optionally, the composition exhibits a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24.

[0172] BF. A composition of paragraph BE, wherein the oxidizing agent includes hydrogen peroxide or peroxyacid.

[0173] The composition of paragraph BE, BG, further comprises about 2 wt% to about 40 wt% oxalic acid.

[0174] The composition of any one of paragraphs BE to BG, wherein the composition further comprises about 0.01 wt% to about 1 wt% of benzotriazole.

[0175] BI. A composition of any one of paragraphs BE to BH, wherein the composition has a pH of about 4 to about 5.

[0176] BJ. A composition comprising: 3-Amino-3-methyl-2-butanol, about 0.001 wt% to about 40 wt%; Approximately 1 wt% to approximately 40 wt% of quaternary ammonium salts; and Approximately 50 wt% to approximately 95 wt% water; Optionally, the composition exhibits a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol, as determined by radiocarbon analysis according to ASTM D6866-24.

[0177] Compositions of paragraph BK and BJ, wherein the quaternary ammonium salt comprises tetramethylammonium hydroxide.

[0178] BL. The composition of paragraph BJ or paragraph BK, which further comprises about 0.01 wt% to about 1 wt% of benzotriazole.

[0179] The composition of any one of paragraphs BJ to BL, further comprising about 0.01 wt% to about 1 wt% gallic acid.

[0180] The composition of any one of paragraphs BJ to BM, further comprising about 0.05 wt% to about 2 wt% of dodecylbenzenesulfonic acid.

[0181] BO. A composition of any one of paragraphs BJ to BN, wherein the composition has a pH of about 9 to about 10.

[0182] BP. A composition of any one of paragraphs BJ to BO, wherein the composition has about 3 ppb to about 100 ppb of total metals.

[0183] BQ. A composition of any one of paragraphs BJ to BP, further comprising an amino alcohol other than 3-amino-3-methyl-2-butanol (“other amino alcohols”).

[0184] The composition of paragraph BQ, wherein the other amino alcohol is 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof.

[0185] Compositions of paragraph BQ or paragraph BR, wherein the composition contains about 0.01 wt% to about 5 wt% of other amino alcohols.

[0186] BT. Compositions of any one of paragraphs BQ to BS, wherein other amino alcohols include 3-(ethylamino)-3-methylbut-2-ol.

[0187] The composition of any one of paragraphs BJ to BT, comprising about 0.001 wt% to about 2 wt% of 3-amino-3-methyl-2-butanol.

[0188] A composition comprising any one of paragraphs BJ to BU, comprising about 0.01 wt% to about 1 wt% of 3-amino-3-methyl-2-butanol.

[0189] The composition of any one of paragraphs BJ to BV, comprising about 0.03 wt% to about 0.5 wt% of 3-amino-3-methyl-2-butanol.

[0190] The composition of any one of paragraphs BJ to BW, comprising about 0.05 wt% to about 0.3 wt% of 3-amino-3-methyl-2-butanol.

[0191] BY. A composition comprising about 0.001 wt% to about 40 wt% of 3-amino-3-methyl-2-butanol, about 5 wt% to about 40 wt% of hydroxylamine and about 50 wt% to about 90 wt% of water, optionally wherein the composition shows a bio-based content of at least about 10% of 3-amino-3-methyl-2-butanol as determined by radiocarbon analysis according to ASTM D6866-24.

[0192] BZ. A composition for use in electrical and electronic applications, the composition comprising 3-Amino-3-methyl-2-butanol, approximately 30 wt% to approximately 99.99 wt%; Water, approximately 0.01 wt% to approximately 70 wt%; and Optionally, amino alcohols other than 3-amino-3-methyl-2-butanol (“other amino alcohols”).

[0193] CA. Paragraph BZ of the composition for use in transparent conductors and sensors, semiconductor films for sensors, photovoltaic devices, lithium-ion batteries, battery manufacturing, semiconductor materials and devices, as a cleaning formulation and / or for the preparation of semiconductor devices (e.g., diodes, transistors, integrated circuits, photonic devices, storage devices and / or sensors).

[0194] CB. Paragraph BZ or paragraph CA of the composition for use, wherein the composition contains about 0.01 wt% to about 60 wt% of other amino alcohols.

[0195] The composition for use in paragraph CB of CC contains no more than 1 wt% of other amino alcohols.

[0196] The composition for use of any one of paragraphs BZ-CC in CD comprises about 85 wt% to about 95 wt% of 3-amino-3-methyl-2-butanol and about 5 wt% to about 15 wt% of water.

[0197] The composition for use of any one of paragraphs BZ-CD of CE comprises about 90 wt% 3-amino-3-methyl-2-butanol, about 10 wt% water and less than 1 wt% other amino alcohols.

[0198] CF. A composition for use in any of paragraphs BZ-CE, wherein the composition comprises less than 2 wt% of a secondary amine.

[0199] CG. A composition for use in any of paragraphs BZ-CF, wherein the composition further comprises not more than 5 wt% of other amino alcohols.

[0200] CH. A composition for use in any of paragraphs BZ-CG, wherein the other amino alcohol is 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof.

[0201] CI. A composition for use in any of paragraphs BZ-CH, wherein the composition comprises at least about 0.01 wt% of another amino alcohol.

[0202] The composition for use in any of paragraphs BZ-CI of CJ., wherein the composition comprises 3-(ethylamino)-3-methylbut-2-ol in addition to 3-amino-3-methyl-2-butanol.

[0203] CK. The composition for use in any of paragraphs BZ-CJ, wherein the composition shows at least about 10% bio-based content as determined by radiocarbon analysis according to ASTM D6866-24.

[0204] The appended claims set forth other embodiments, together with the full range of equivalents to which these claims are entitled.

Claims

1. A composition comprising a solvent in a weight ratio of 300:1 to about 1:300 and 3-amino-3-methyl-2-butanol, optionally wherein the solvent is a non-aqueous solvent.

2. The composition according to claim 1, wherein the composition comprises a solvent in a weight ratio of 2:1 to about 1:2 and 3-amino-3-methyl-2-butanol.

3. The composition according to claim 1, wherein the solvent is a non-aqueous solvent comprising: methyl isobutyl ketone, ethyl propyl ketone, acetophenone, dimethylformamide, N-methyl-2-pyrrolidine (NMP), acetonitrile, dimethyl sulfoxide, or any combination of two or more thereof.

4. The composition according to claim 1, wherein the composition comprises about 40 wt% to about 99 wt% of a solvent and about 0.01 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol.

5. The composition according to claim 1, wherein the composition further comprises a conductive material, a semiconductor material, or a combination thereof.

6. The composition according to claim 5, wherein the composition comprises about 5 wt% to about 90 wt% of a conductive material.

7. The composition according to claim 5, wherein the conductive material comprises a lithium-ion battery cathode material.

8. The composition according to claim 7, wherein the lithium-ion battery cathode material comprises lithium iron phosphate, lithium manganese iron phosphate, lithium nickel manganese cobalt oxide, lithium cobalt oxide, lithium nickel oxide, lithium manganese oxide, lithium nickel cobalt aluminum oxide, lithium titanate, or any combination of two or more thereof.

9. The composition of claim 7, wherein the lithium-ion battery cathode material comprises about 20 wt% to about 70 wt% of lithium iron phosphate.

10. The composition of claim 7, wherein the lithium-ion battery cathode material comprises about 40 wt% to about 80 wt% of nickel cobalt aluminum oxide.

11. The composition according to claim 5, wherein the conductive material comprises a lithium-ion battery negative electrode material.

12. The composition according to claim 11, wherein the lithium-ion battery negative electrode material comprises graphite, lithium, silicon, or any combination of two or more thereof.

13. The composition according to claim 1, wherein the composition comprises about 40 wt% to about 60 wt% of a solvent and about 0.05 wt% to about 5 wt% of 3-amino-3-methyl-2-butanol.

14. The composition of claim 1, wherein the composition comprises about 0.1 wt% to about 3 wt% of 3-amino-3-methyl-2-butanol.

15. The composition according to claim 5, wherein the conductive material comprises conductive carbon.

16. The composition of claim 15, wherein the composition comprises about 80 wt% to about 98 wt% of a solvent and about 0.5 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol.

17. The composition of claim 15, wherein the conductive carbon comprises single-walled carbon nanotubes, multi-walled carbon nanotubes, carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, graphene, or any combination of two or more thereof.

18. The composition of claim 1, wherein the composition further comprises a lithium-ion battery separator polymer.

19. The composition of claim 18, wherein the lithium-ion battery separator polymer comprises polyethylene, polypropylene, poly(vinylidene fluoride), polyamide, polyethylene oxide, or any combination or copolymer of any two or more thereof.

20. The composition of claim 1, wherein the composition further comprises an amino alcohol other than 3-amino-3-methyl-2-butanol ("other amino alcohols").

21. The composition according to claim 20, wherein the other amino alcohol is 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof.

22. The composition of claim 20, wherein the composition comprises about 0.01 wt% to about 5 wt% of the other amino alcohol.

23. The composition of claim 20, wherein the other amino alcohol comprises 3-(ethylamino)-3-methylbut-2-ol.

24. A method for preparing the composition according to claim 1, the method comprising combining 3-amino-3-methyl-2-butanol of a purity of at least 95 wt% with a sufficient solvent to provide the composition.

25. The method of claim 24, wherein the method further comprises mixing the combined 3-amino-3-methyl-2-butanol with a solvent until a homogeneous solution is obtained.

26. A lithium-ion battery electrode slurry comprising a conductive material, a solvent, and 3-amino-3-methyl-2-butanol.

27. The lithium-ion battery electrode slurry of claim 26, comprising about 40 wt% to about 99 wt% of a solvent and about 0.01 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol.

28. The lithium-ion battery electrode slurry of claim 26, comprising about 40 wt% to about 60 wt% of a solvent and about 0.05 wt% to about 5 wt% of 3-amino-3-methyl-2-butanol.

29. The lithium-ion battery electrode slurry according to claim 26, comprising about 0.1 wt% to about 3 wt% of 3-amino-3-methyl-2-butanol.

30. The lithium-ion battery electrode slurry according to claim 26, comprising about 5 wt% to about 90 wt% of conductive material.

31. The lithium-ion battery electrode slurry according to claim 26, wherein the conductive material comprises a lithium-ion battery positive electrode material.

32. The lithium-ion battery electrode slurry according to claim 31, wherein the lithium-ion battery cathode material comprises lithium iron phosphate, lithium manganese iron phosphate, lithium nickel manganese cobalt oxide, lithium cobalt oxide, lithium nickel oxide, lithium manganese oxide, lithium nickel cobalt aluminum oxide, lithium titanate, or any combination of two or more thereof.

33. The lithium-ion battery electrode slurry according to claim 32, wherein the lithium-ion battery cathode material comprises about 20 wt% to about 70 wt% of lithium iron phosphate.

34. The lithium-ion battery electrode slurry of claim 32, wherein the lithium-ion battery cathode material comprises about 40 wt% to about 80 wt% of nickel cobalt aluminum oxide.

35. The lithium-ion battery electrode slurry according to claim 26, wherein the conductive material comprises a lithium-ion battery negative electrode material.

36. The lithium-ion battery electrode slurry according to claim 35, wherein the lithium-ion battery negative electrode material comprises graphite, lithium metal, silicon, or any combination of two or more thereof.

37. The lithium-ion battery electrode slurry according to claim 26, further comprising a polymer binder.

38. The lithium-ion battery electrode slurry according to claim 37, wherein the polymer binder comprises polyvinylidene fluoride, styrene-butadiene copolymer, carboxymethyl cellulose, polyacrylate latex, or any two or more mixtures thereof.

39. The lithium-ion battery electrode slurry according to claim 38, wherein the polymer binder is a styrene-butadiene copolymer or carboxymethyl cellulose.

40. The lithium-ion battery electrode slurry according to claim 26, further comprising conductive carbon.

41. The lithium-ion battery electrode slurry according to claim 40, wherein the conductive carbon material comprises single-walled carbon nanotubes, multi-walled carbon nanotubes, carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, graphene, or any combination of two or more thereof.

42. The lithium-ion battery electrode slurry according to claim 26, wherein the solvent comprises N-methyl-2-pyrrolidone or water.

43. A method for preparing a lithium-ion battery electrode slurry according to claim 26, the method comprising combining 3-amino-3-methyl-2-butanol of a purity of at least 95 wt% with a sufficient solvent and a sufficient conductive material to provide a composition.

44. The method of claim 43, wherein the method further comprises mixing the combined 3-amino-3-methyl-2-butanol, the conductive material and the solvent until a homogeneous slurry is obtained.

45. A composition comprising: The polymer comprises about 5 wt% to about 30 wt% of polyethylene, polypropylene, poly(vinylidene fluoride), polyamide, polyethylene oxide, polypropylene oxide or any combination or copolymer of any two or more thereof. about 0.01 wt% to about 10 wt% of 3-amino-3-methyl-2-butanol; and Solvent.

46. ​​The composition of claim 45, wherein the polymer comprises a copolymer of polyethylene oxide and polypropylene oxide.

47. The composition of claim 45, wherein the solvent comprises N-methyl-2-pyrrolidone.

48. A method for preparing the composition according to claim 45, the method comprising combining 3-amino-3-methyl-2-butanol of a purity of at least 95 wt% with a sufficient polymer and a sufficient solvent to provide the composition.

49. The method of claim 48, wherein the method further comprises mixing the combined 3-amino-3-methyl-2-butanol, polymer and solvent until a homogeneous solution is obtained.

50. A composition comprising conductive carbon, a solvent, and 3-amino-3-methyl-2-butanol.

51. The composition of claim 50, wherein the conductive carbon comprises single-walled carbon nanotubes, multi-walled carbon nanotubes, carbon black, amorphous carbon, mesoporous carbon, carbon nanofibers, graphite, graphene, or any combination of two or more thereof.

52. The composition of claim 50, wherein the composition comprises 0.2 wt% to 20 wt% conductive carbon and about 0.2 wt.% to about 20 wt.% 3-amino-3-methyl-2-butanol.

53. A composition comprising: 3-Amino-3-methyl-2-butanol, about 0.001 wt% to about 40 wt%; and Diol ethers of about 10 wt% to about 99 wt%.

54. The composition of claim 53, wherein the glycol ether comprises butyl diethylene glycol, 2-(2-ethoxyethoxy)ethanol, or a combination thereof.

55. The composition according to claim 53, wherein the composition further comprises about 2 wt% to about 40 wt% of N-methylpyrrolidone.

56. The composition of claim 53, wherein the composition further comprises about 2 wt% to about 60 wt% water.

57. A composition comprising: 3-Amino-3-methyl-2-butanol, about 0.001 wt% to about 40 wt%; Oxidizing agent of about 5 wt% to about 40 wt%; and Water, approximately 50 wt% to approximately 90 wt%.

58. The composition of claim 57, wherein the oxidant comprises hydrogen peroxide or peroxyacid.

59. The composition of claim 57, further comprising about 2 wt% to about 40 wt% oxalic acid.

60. The composition of claim 57, wherein the composition further comprises about 0.01 wt% to about 1 wt% of benzotriazole.

61. The composition according to claim 57, wherein the composition has a pH of about 4 to about 5.

62. A composition comprising: 3-Amino-3-methyl-2-butanol, about 0.001 wt% to about 40 wt%; Approximately 1 wt% to approximately 40 wt% of quaternary ammonium salts; and Water, approximately 50 wt% to approximately 95 wt%.

63. The composition according to claim 62, wherein the quaternary ammonium salt comprises tetramethylammonium hydroxide.

64. The composition of claim 62, wherein the composition further comprises about 0.01 wt% to about 1 wt% of benzotriazole.

65. The composition of claim 62, wherein the composition further comprises about 0.01 wt% to about 1 wt% gallic acid.

66. The composition according to claim 62, wherein the composition further comprises about 0.05 wt% to about 2 wt% dodecylbenzenesulfonic acid.

67. The composition according to claim 62, wherein the composition has a pH of about 9 to about 10.

68. The composition according to claim 53, wherein the composition has about 3 ppb to about 100 ppb of total metals.

69. The composition of claim 53, further comprising an amino alcohol other than 3-amino-3-methyl-2-butanol ("other amino alcohols").

70. The composition according to claim 69, wherein the other amino alcohol is 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof.

71. The composition of claim 69, wherein the composition comprises about 0.01 wt% to about 5 wt% of the other amino alcohol.

72. The composition of claim 69, wherein the other amino alcohol comprises 3-(ethylamino)-3-methylbut-2-ol.

73. The composition of claim 53, wherein the composition comprises about 0.001 wt% to about 2 wt% of 3-amino-3-methyl-2-butanol.

74. The composition of claim 53, wherein the composition comprises about 0.01 wt% to about 1 wt% of 3-amino-3-methyl-2-butanol.

75. The composition of claim 53, wherein the composition comprises about 0.03 wt% to about 0.5 wt% of 3-amino-3-methyl-2-butanol.

76. The composition of claim 53, wherein the composition comprises about 0.05 wt% to about 0.3 wt% of 3-amino-3-methyl-2-butanol.

77. A composition comprising: 3-Amino-3-methyl-2-butanol, about 0.001 wt% to about 40 wt%; Hydroxylamine from about 5 wt% to about 40 wt%; and Water, approximately 50 wt% to approximately 90 wt%.

78. A composition for use in electrical and electronic applications, the composition comprising 3-Amino-3-methyl-2-butanol, approximately 30 wt% to approximately 99.99 wt%; Water, approximately 0.01 wt% to approximately 70 wt%; and Optionally, amino alcohols other than 3-amino-3-methyl-2-butanol ("other amino alcohols").

79. The composition for use according to claim 78, wherein the composition is intended for use in transparent conductors and sensors, semiconductor films for sensors, photovoltaic devices, and for use in lithium-ion batteries, battery manufacturing, semiconductor materials and devices, as a cleaning formulation and / or in the manufacture of semiconductor materials and devices.

80. The composition for use according to claim 78, wherein the composition comprises about 0.01 wt% to about 60 wt% of the other amino alcohol.

81. The composition for use according to claim 80, wherein the composition comprises not more than 1 wt% of the other amino alcohol.

82. The composition for use according to claim 78, wherein the composition comprises about 70 wt% to about 95 wt% of 3-amino-3-methyl-2-butanol and about 5 wt% to about 30 wt% of water.

83. The composition for use according to claim 78, wherein the composition comprises about 90 wt% of 3-amino-3-methyl-2-butanol, about 10 wt% of water and less than 1 wt% of the other amino alcohols.

84. The composition for use according to claim 78, wherein the composition comprises less than 2 wt% of a secondary amine.

85. The composition for use according to claim 78, wherein the composition further comprises not more than 5 wt% of the other amino alcohol.

86. The composition for use according to claim 85, wherein the other amino alcohol is 2-aminoethanol, triethanolamine, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-amino-1-butanol, 2-amino-2-ethyl-1,3-propanediol, 3-(ethylamino)-3-methylbut-2-ol, or any combination of two or more thereof.

87. The composition for use according to claim 85, wherein the composition comprises at least about 0.01 wt% of the other amino alcohol.

88. The composition for use according to claim 85, wherein, in addition to 3-amino-3-methyl-2-butanol, the composition comprises 3-(ethylamino)-3-methylbut-2-ol.

89. The composition for use according to claim 78, wherein the composition shows at least about 10% bio-based content as determined by radiocarbon analysis according to ASTM D6866-24.

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