Optoelectronic device, optical module, and optical communication apparatus

Abstract

The invention discloses a photoelectric device, an optical module and an optical communication device, and relates to the technical field of optical communication. The photoelectric device mainly comprises a signal input port, a signal output port and a silicon-based integrated circuit integrating a modulator and a semiconductor optical amplifier, and the modulator modulates a first optical signal output by the laser chip through an electric signal input by the signal input port to obtain and output a second optical signal; the second optical signal is output through the signal output port, and the semiconductor optical amplifier is used for amplifying one of the first optical signal and the second optical signal. Therefore, the manufacturing cost for manufacturing the optical module can be reduced by utilizing a mature complementary metal oxide semiconductor manufacturing process, in addition, the semiconductor optical amplifier can amplify the power of the optical signal input or output by the modulator, and the transmitting power requirement of the optical module can be further met.

Description

Technical Field

[0001] This application relates to the field of optical communication technology, and more specifically, to an optoelectronic device, an optical module, and an optical communication apparatus. Background Technology

[0002] Optical communication is a communication method that uses light and optical fibers to transmit information. Compared to copper wire transmission, optical fiber transmission has the advantages of high capacity, low latency, strong anti-interference ability, and long transmission distance.

[0003] Optical modules, as core components in optical communication networks, are widely used in various optical communication network systems, including long-haul trunk lines, data center transmission, and access network transmission. One of the key technical indicators of optical modules is transmit power. Currently, to meet the demands of energy conservation and emission reduction, low cost has become a design focus for optical modules. Therefore, how to reduce the cost of optical modules while meeting their transmit power requirements is a pressing technical problem that needs to be solved. Summary of the Invention

[0004] This application provides an optoelectronic device, an optical module, and an optical communication device that can reduce the cost of the optical module while meeting the transmission power requirements of the optical module.

[0005] In a first aspect, an optoelectronic device is provided, comprising: a first signal input port, a first signal output port, and a silicon-based integrated circuit, wherein the silicon-based integrated circuit includes a modulator and a first semiconductor optical amplifier. The modulator is used to modulate a first optical signal output from a laser chip by a first electrical signal input through the first signal input port to obtain and output a second optical signal, the second optical signal being output from the first signal output port; the first semiconductor optical amplifier is used to amplify one of the first optical signal and the second optical signal.

[0006] Optoelectronic devices are among the core components of optical modules, accounting for a significant portion of their cost. Integrating the modulator and semiconductor optical amplifier (SOA) onto a silicon-based integrated circuit leverages mature complementary metal-oxide-semiconductor (CMOS) manufacturing processes to reduce the manufacturing cost of the optical module. Simultaneously, the SOA amplifies the power of the input or output optical signal from the modulator, thus addressing the low modulation efficiency inherent in silicon-based integrated circuits and ultimately meeting the transmit power requirements of the optical module. In summary, based on these optoelectronic devices, the cost of the optical module can be reduced while still meeting its transmit power requirements.

[0007] In some implementations of the first aspect, the silicon-based integrated circuit further includes a second semiconductor optical amplifier. The first semiconductor optical amplifier is positioned before the input of the modulator, and the second semiconductor optical amplifier is positioned after the output of the modulator. The first semiconductor optical amplifier amplifies the first optical signal, and the second semiconductor optical amplifier amplifies the second optical signal. Alternatively, the first semiconductor optical amplifier is positioned after the output of the modulator, and the second semiconductor optical amplifier is positioned before the input of the modulator. The first semiconductor optical amplifier amplifies the second optical signal, and the second semiconductor optical amplifier amplifies the first optical signal.

[0008] When the first semiconductor optical amplifier is placed before the input of the modulator and the second semiconductor optical amplifier is placed after the output of the modulator, the first semiconductor optical amplifier amplifies the first optical signal, thereby increasing the power of the first optical signal entering the modulator. The second semiconductor optical amplifier further amplifies the modulated second optical signal, thereby increasing the output power of the optical module.

[0009] When the second semiconductor optical amplifier is placed before the input of the modulator and the first semiconductor optical amplifier is placed after the output of the modulator, the second semiconductor optical amplifier amplifies the first optical signal, thereby increasing the power of the first optical signal entering the modulator. The first semiconductor optical amplifier further amplifies the modulated second optical signal, thereby increasing the output power of the optical module.

[0010] In some implementations of the first aspect, the silicon-based integrated circuit also includes the aforementioned laser chip. This increases the integration density of the silicon-based integrated circuit.

[0011] In some implementations of the first aspect, the optoelectronic device further includes a second signal input port and a second signal output port. The silicon-based integrated circuit also includes a receiver for demodulating the third optical signal input at the second signal input port to obtain and output a second electrical signal, which is then output from the second signal output port. Thus, integrating the receiver into the silicon-based integrated circuit increases the integration density of the silicon-based integrated circuit.

[0012] In some implementations of the first aspect, the receiver is a coherent optical receiver that demodulates the third optical signal input to the second signal input port to obtain a second electrical signal, including: obtaining the second electrical signal based on the fourth optical signal output by the laser chip and the third optical signal, wherein the fourth optical signal is identical to the first optical signal. This enables coherent optical communication.

[0013] In some implementations of the first aspect, the modulator is of the type Mach-Zehnder modulator.

[0014] In some implementations of the first aspect, the silicon-based integrated circuit also includes a wavelength-locking unit for adjusting the wavelength of the optical signal emitted by the laser chip.

[0015] In a second aspect, an optical module is provided, the optical module including a digital signal processing chip and the optoelectronic device described in the first aspect and any possible implementation thereof, wherein the digital signal processing chip is used to output a first electrical signal.

[0016] Thirdly, an optical communication device is provided, which includes the optical module described in the second aspect. Attached Figure Description

[0017] Figure 1 This is a structural schematic diagram of the optical module 100.

[0018] Figure 2 This is a schematic diagram of the structure of optoelectronic device 200.

[0019] Figure 3 This is another structural schematic diagram of the optoelectronic device 200.

[0020] Figure 4 This is another structural schematic diagram of the optoelectronic device 200.

[0021] Figure 5 This is a structural diagram of an optical module 300.

[0022] Figure 6 This is another structural diagram of the optical module 300.

[0023] Figure 7 This is another structural diagram of the optical module 300. Detailed Implementation

[0024] To facilitate understanding of the embodiments of this application, the following points will be explained first.

[0025] 1. Unless otherwise stated, “at least one” means “one or more”.

[0026] 2. Unless otherwise specified or in case of logical conflict, the terms and / or descriptions in different embodiments of this application are consistent and can be referenced in each other. The technical features in different embodiments can be combined to form new embodiments according to their inherent logical relationships.

[0027] III. The various numerical designations used in this application are merely for descriptive convenience and do not limit the scope of protection of this application. The magnitude of the serial numbers used in this application does not imply the order of execution; the execution order of each process should be determined by its function and internal logic. For example, the terms "first (1)", "second (2)", "third (3)" and other various terminology (if present) in the specification, claims, and drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order. The data used in this way can be interchanged where appropriate so that the embodiments described herein can be implemented in a sequence other than that illustrated or described herein.

[0028] Furthermore, any embodiment or design described in this application as "exemplary" or "for example" should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner for ease of understanding.

[0029] IV. The terms “comprising” and “having” and any variations thereof are intended to cover non-exclusive inclusion, for example, a system, product or device that includes a series of steps or units is not necessarily limited to those units that are explicitly listed, but may include other units that are not explicitly listed or that are inherent to such products or devices.

[0030] The technical solution of this application can be applied to scenarios such as optical communication and optical switching, for example, coherent optical communication or incoherent optical communication.

[0031] See Figure 1 , Figure 1 This is a structural schematic diagram of the optical module 100. (See diagram below.) Figure 1 As shown, the optical module 100 includes an optoelectronic device 110, a digital signal processing chip 120, and a control system 130. The optoelectronic device 110 is used to convert between electrical signals and optical signals, such as converting an electrical signal to an optical signal or vice versa. The digital signal processing chip 120 is used to process electrical signals, such as processing the electrical signals input to the optoelectronic device 110 or outputting electrical signals to the optoelectronic device 110. The control system 130 is used to control the digital signal processing chip 120 and the optoelectronic device 110.

[0032] As described in the background section, in order to meet the requirements of energy conservation and emission reduction, low cost has become a key design focus for optical modules. Therefore, how to reduce the cost of optical modules while meeting their transmission power requirements is a pressing technical problem. In view of this, embodiments of this application provide an optoelectronic device, an optical module, and an optical communication apparatus that can reduce the cost of optical modules while meeting their transmission power requirements.

[0033] See Figure 2 , Figure 2 This is a schematic diagram of the structure of optoelectronic device 200. (See diagram below.) Figure 2 As shown, the optoelectronic device 200 mainly includes: a signal input port 201 (first signal input port), a signal output port 202 (first signal output port), and a silicon-based integrated circuit 203. The silicon-based integrated circuit 203 integrates a modulator 2031 and a semiconductor optical amplifier (SOA) 2032. The modulator 2031 modulates the optical signal 1 (first optical signal) output from the laser chip 204 using the electrical signal 1 (first electrical signal) input through the signal input port 201 to obtain and output an optical signal 2 (second optical signal). The optical signal 2 is output through the signal output port 202. The SOA 2032 amplifies one of the optical signals, i.e., it amplifies the power of either optical signal 1 or optical signal 2. The working principle of the modulator 2031 will not be elaborated further. Furthermore, this embodiment does not limit the method by which the modulator 2031 acquires the optical signal 1.

[0034] Figure 2 In this configuration, SOA2032 can amplify the power of optical signal 1 input to modulator 2031 or optical signal 2 output to modulator 2031. The amplification processing of different optical signals by SOA2032 depends on its deployment location.

[0035] One possible implementation is to place the SOA2032 before the input of the modulator 2031. For example, the SOA2032 can be placed after the output of the laser chip 204. In other words, optical signal 1 needs to be amplified by the SOA2032 before entering the modulator 2031. This allows for pre-amplification of the optical signal power; that is, the SOA2032 can pre-amplify the power of optical signal 1 emitted by the laser chip 204, thereby increasing the power of optical signal 1 entering the modulator 2031. This, in turn, helps to increase the output power of the optical module, i.e., increase the output power of optical signal 2.

[0036] Another possible implementation is to place the SOA2032 after the output of the modulator 2031. For example, the SOA2032 can be positioned before the signal output port 202. That is, after the modulator 2032 outputs optical signal 2, optical signal 2 needs to be re-amplified by the SOA2032 before being output through the signal output port 202. In this way, the power of the optical signal can be re-amplified, that is, the SOA2032 can re-amplify the power of the modulated optical signal, thereby increasing the output power of the optical module, that is, increasing the output power of optical signal 2.

[0037] One possible implementation is that one or both of the signal input port 201 and the signal output port 202 can be integrated into the silicon-based integrated circuit 203, or the signal input port 201 and the signal output port 202 can be independent of the silicon-based integrated circuit 203, which is not limited.

[0038] One possible implementation is that the modulator 2031 can be a Mach-Zehnder modulator (MZM), an electro-absorption modulator (EAM), or other types of modulators.

[0039] In this embodiment, the modulator 2031 and SOA 2032 can be integrated into the silicon-based integrated circuit 203 by means of photonics wirebonding (PWB), evanescent wave coupling (EVL), and hybrid electrical integration.

[0040] One possible implementation is that the modulator 2031 and SOA 2032 are made of different materials. For example, the modulator 2031 is made of silicon-based material, while the SOA 2032 is made of indium phosphide-based material. This would allow the SOA 2032 to be integrated onto the silicon-based integrated circuit 203.

[0041] As mentioned earlier, optoelectronic devices are the core components of optical modules, accounting for a significant portion of their cost. Integrating the modulator and SOA (Optical Array of Optical Aspects) onto a silicon-based integrated circuit allows for the reduction of manufacturing costs by leveraging mature CMOS manufacturing processes. Furthermore, the SOA amplifies the power of the input or output optical signals from the modulator, thus addressing the low modulation efficiency issue inherent in silicon-based integrated circuits and ultimately meeting the transmit power requirements of the optical module. In summary, based on these optoelectronic devices, the cost of the optical module can be reduced while still meeting its transmit power requirements.

[0042] See Figure 3 , Figure 3 This is another structural schematic diagram of optoelectronic device 200. For example... Figure 3 As shown, the optoelectronic device 200 includes: a signal input port 201, a signal output port 202, and a silicon-based integrated circuit 203. The silicon-based integrated circuit 203 includes a modulator 2031, an SOA 2032, and an SOA 2033. SOA 2032 is positioned before the input of modulator 2031, and SOA 2033 is positioned after the output of modulator 2031. Alternatively, SOA 2033 is positioned before the input of modulator 2031, and SOA 2032 is positioned after the output of modulator 2031. Figure 3 (Not displayed).

[0043] When SOA2032 is placed before the input of modulator 2031 and SOA2033 is placed after the output of modulator 2031, SOA2032 amplifies optical signal 1, thereby increasing the power of optical signal 1 entering modulator 2031. SOA2033 further amplifies the modulated optical signal 2, thereby increasing the output power of the optical module.

[0044] When SOA2032 is placed before the input of modulator 2031 and after the output of modulator 2031, SOA2033 amplifies optical signal 1, thereby increasing the power of optical signal 1 entering modulator 2031. SOA2032 further amplifies the modulated optical signal 2, thereby increasing the output power of the optical module.

[0045] In one possible implementation, the silicon-based integrated circuit 203 could also include a laser chip 204. This would improve the integration density of the silicon-based integrated circuit.

[0046] One possible implementation is that the silicon-based integrated circuit 203 may not integrate the laser chip 204. Correspondingly, the laser chip 204 can be connected to the silicon-based integrated circuit 203 via optical fiber. When the silicon-based integrated circuit 203 does not integrate the laser chip 204, this reduces the design requirements for the silicon-based integrated circuit 203, thereby reducing the manufacturing difficulty of the silicon-based integrated circuit 203.

[0047] See Figure 4 , Figure 4 This is another structural schematic diagram of the optoelectronic device 200. (For example...) Figure 4As shown, the optoelectronic device 200 includes: a signal input port 201, a signal output port 202, a signal input port 205, a signal output port 206, and a silicon-based integrated circuit 203. The silicon-based integrated circuit 203 includes a modulator 2031, an SOA 2032, an SOA 2033, and a receiver 2034. The receiver 2034 demodulates the optical signal 3 (third optical signal) input through the signal input port 205 (second signal input port) to obtain an electrical signal 2 (second electrical signal), and outputs the electrical signal 2 through the signal output port 206 (second signal output port).

[0048] based on Figure 4 The architecture shown can increase the integration density of silicon-based integrated circuits when the receiver is integrated into the silicon-based integrated circuit.

[0049] In one possible implementation, the silicon-based integrated circuit 203 also includes an SOA 2025, which is positioned before the input of the receiver 2024. This would increase the power of the optical signal entering the receiver 2035.

[0050] One possible implementation is that one or both of the signal input port 205 and the signal output port 206 can be integrated into the silicon-based integrated circuit 203, or the signal input port 205 and the signal output port 206 can be independent of the silicon-based integrated circuit 203, which is not limited.

[0051] One possible implementation is that the receiver 2034 can be an integrated coherent receiver (ICR), which can be used to perform coherent demodulation functions.

[0052] One possible implementation is that, when receiver 2034 is an ICR, receiver 2034 demodulates the optical signal 3 input to signal input port 205 to obtain electrical signal 2, including:

[0053] Electrical signal 2 is obtained from optical signal 4 (fourth optical signal) and optical signal 3 output by laser chip 204. Optical signal 4 is the same as optical signal 1.

[0054] When the receiver 2034 performs coherent demodulation, the optoelectronic device 200 can be applied to coherent optical communication scenarios.

[0055] In one possible implementation, receiver 2034 can also be an intensity-modulation direct-detection (IMDD) receiver, which can be used to perform noncoherent demodulation functions.

[0056] In one possible implementation, the silicon-based integrated circuit 203 may also include a wavelength locking unit 2025, which is used to adjust the wavelength of the optical signal output by the laser chip 204. The structure of the wavelength locking unit 2035 will not be described in detail.

[0057] based on Figures 2 to 5 The optoelectronic device 200 shown in this application provides an optical module, which can be found in the following examples. Figure 5 .

[0058] See Figure 5 , Figure 5 This is a structural diagram of an optical module 300. (Example) Figure 5 As shown, the optical module 300 includes: an optoelectronic device 200 and a digital signal processing chip, wherein the digital signal processing chip is used to output electrical signal I. A description of the optoelectronic device 200 in the optical module 200 can be found above. Figures 2 to 5 The description of that will not be repeated here. Additionally, for a description of the digital signal processing chip in the optical module 300, please refer to [link to relevant documentation]. Figure 1 The description of the digital signal processing chip 120 in the text will not be repeated here.

[0059] See Figure 6 , Figure 6 This is another structural diagram of the optical module 300. (For example...) Figure 6 As shown, the optical module 300 mainly includes: an optoelectronic device 200, a digital signal processing chip, an amplifier chip (such as a driver chip), and a transimpedance amplification (TAI) chip. The digital signal processing chip is connected to the amplifier chip, and the amplifier chip is connected to the signal input port 201 of the optoelectronic device 200. The TIA chip is connected to the signal output port 206 of the optoelectronic device 200. The optoelectronic device 200 includes a signal input port 201, a signal output port 202, a silicon-based integrated circuit 203, a laser chip 204, a signal input port 205, and a signal output port 206. The silicon-based integrated circuit 203 integrates an MZM2031, an SOA2032, an SOA2033, a receiver 2034, and a wavelength locking unit 2035. The receiver 2024 is an ICR. The laser chip 204 is used to output optical signals to the SOA2032, the receiver 2034, and the wavelength locking unit 2035, respectively.

[0060] Figure 6 This description uses an optoelectronic device 200 comprising SOA2032 and SOA2034 as an example; however, the optoelectronic device 200 may include one of SOA2032 and SOA2034. Additionally, Figure 6This description uses an optical module 300 including an amplification chip as an example; however, the optical module 300 may or may not include an amplification chip, or may include a low-gain amplification chip; this is not limited. Furthermore, Figure 6 This description uses a silicon-based integrated circuit 203 including a laser chip 204 as an example; however, the laser chip 204 can operate independently of the silicon-based integrated circuit 203. Furthermore,

[0061] Figure 6 This description is based on the silicon-based integrated circuit 203 excluding SOA2034, but the silicon-based integrated circuit 203 can also include SOA2035.

[0062] See Figure 7 , Figure 7 This is another structural diagram of the optical module 300. (For example...) Figure 7 As shown, the optical module 300 mainly includes: an optoelectronic device 200, a digital signal processing chip, an amplifier chip, and a TIA chip. The digital signal processing chip is connected to the amplifier chip, and the amplifier chip is connected to the signal input port 201 of the optoelectronic device 200. The TIA chip is connected to the signal output port 206 of the optoelectronic device 200. The optoelectronic device 200 includes a signal input port 201, a signal output port 202, a silicon-based integrated circuit 203, a laser chip 204, a signal input port 205, and a signal output port 206. The silicon-based integrated circuit 203 integrates an MZM2031, an SOA2032, an SOA2033, a receiver 2034, and a wavelength locking unit 2035. The receiver 2034 is an IMDD receiver. The laser chip 204 is used to output optical signals to the SOA2032.

[0063] Figure 7 This description uses an optoelectronic device 200 comprising SOA2032 and SOA2034 as an example; however, the optoelectronic device 200 may include one of SOA2032 and SOA2034. Additionally, Figure 7 This description uses an optical module 300 including an amplification chip as an example; however, the optical module 300 may or may not include an amplification chip, or may include a low-gain amplification chip; this is not limited. Furthermore, Figure 7 The description is based on a silicon-based integrated circuit 203 including a laser chip 204, but the laser chip 204 can be independent of the silicon-based integrated circuit 203.

[0064] based on Figures 5 to 7 The optical module 300 shown in this application embodiment also provides an optical communication device including the optical module 300, and the specific form of the optical communication device is not limited.

[0065] In summary, those skilled in the art will recognize that the units of the various examples described in connection with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0066] In the embodiments provided in this application, it should be understood that the disclosed electronic devices and apparatuses can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative. For instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between devices or modules, and may be electrical, mechanical, or other forms.

[0067] The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules; that is, they may be located in one place or distributed in multiple places. Some or all of the modules can be selected to achieve the purpose of the embodiments of this application, depending on actual needs.

[0068] In addition, the functional modules in the embodiments of this application can be integrated into one unit, or each module can exist physically separately, or two or more modules can be integrated into one module.

[0069] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An optoelectronic device, characterized in that, include: A first signal input port, a first signal output port, and a silicon-based integrated circuit, wherein the silicon-based integrated circuit includes a modulator and a first semiconductor optical amplifier; The modulator is used to modulate the first optical signal output by the laser chip through the first electrical signal input through the first signal input port to obtain and output a second optical signal, and the second optical signal is output from the first signal output port. The first semiconductor optical amplifier is used to amplify one of the first optical signal and the second optical signal.

2. The optoelectronic device according to claim 1, characterized in that, The silicon-based integrated circuit also includes a second semiconductor optical amplifier; The first semiconductor optical amplifier is disposed before the input terminal of the modulator, and the second semiconductor optical amplifier is disposed after the output terminal of the modulator. The first semiconductor optical amplifier is used to amplify the first optical signal, and the second semiconductor optical amplifier is used to amplify the second optical signal. or, The first semiconductor optical amplifier is disposed after the output terminal of the modulator, and the second semiconductor optical amplifier is disposed before the input terminal of the modulator. The first semiconductor optical amplifier is used to amplify the second optical signal, and the second semiconductor optical amplifier is used to amplify the first optical signal.

3. The optoelectronic device according to claim 1 or 2, characterized in that, The silicon-based integrated circuit also includes the laser chip.

4. The optoelectronic device according to any one of claims 1 to 3, characterized in that, The optoelectronic device further includes a second signal input port and a second signal output port, and the silicon-based integrated circuit further includes a receiver; The receiver is used to demodulate the third optical signal input to the second signal input port to obtain and output a second electrical signal, which is output from the second signal output port.

5. The optoelectronic device according to claim 4, characterized in that, The receiver is a coherent optical receiver, and the demodulation of the third optical signal input to the second signal input port to obtain the second electrical signal includes: The second electrical signal is obtained based on the fourth optical signal output by the laser chip and the third optical signal, wherein the fourth optical signal is the same as the first optical signal.

6. The optoelectronic device according to any one of claims 1 to 5, characterized in that, The modulator is a Mach-Zehnder modulator.

7. The optoelectronic device according to any one of claims 1 to 6, characterized in that, The silicon-based integrated circuit also includes a wavelength locking unit, which is used to adjust the wavelength of the light signal emitted by the laser chip.

8. An optical module, characterized in that, The optical module includes a digital signal processing chip and an optoelectronic device according to any one of claims 1 to 7, wherein the digital signal processing chip is used to output the first electrical signal.

9. An optical communication device, characterized in that, The optical communication device includes the optical module as described in claim 8.

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