Bonded body and semiconductor manufacturing apparatus

Abstract

A joined body is provided with: a first member formed from a ceramic; a second member formed of a ceramic or a metal; and a bonding layer that is disposed between the first member and the second member, contains In (indium) and Sn (tin) as a main component, and contains Ti (titanium), Hf (hafnium) and Zr (zirconium), the bonding layer having a compound containing Ti, Hf and Zr, and in a cross-section along a lamination direction in which the first member, the bonding layer, and the second member are laminated, the thickness of the bonding layer is greater than that of the compound containing Ti, Hf, and Zr, and the thickness of the bonding layer is greater than that of the compound containing Ti, Hf, and Zr. The area ratio of the compound formed in a first interface region between the first member and the bonding layer is 6% or more and 60% or less.

Description

Technical Field

[0001] This invention relates to bonding agents and semiconductor manufacturing apparatus. Background Technology

[0002] It is known that there are joints formed by joining two components together through a bonding layer containing a bonding material (for example, see Patent Document 1). The bonding layer described in Patent Document 1 has a bonding material with indium (In) as the main component and a metal layer formed by a mesh component into which the bonding material enters.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 7498283 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] One of the important challenges in bonding is reducing residual stress caused by the difference in thermal expansion coefficients between the components to be bonded and the bonding materials. This is especially true in the case of bonding ceramics and metals, where the difference in thermal expansion between the two materials is large. Furthermore, when different types of ceramics are bonded together, the difference in thermal expansion remains at the bonding interface, making the ceramic, being a brittle material, susceptible to residual stress. For example, in the case of bonding alumina and metals, alloy 42, which has a thermal expansion coefficient close to that of alumina, is used as the bonding material, or a thin Cu / Ag foil is used as the softer material.

[0008] As described in Patent Document 1, low-temperature bonding is possible by using In, which has a low melting point, as a bonding material. Since In is a soft metal, residual stress caused by the difference in thermal expansion coefficients is reduced. However, pure metals like In and Sn (tin) are difficult to wet ceramics. Therefore, when ceramic components are used for bonding with In, a chemical bonding or other reaction layer is needed at the interface between the bonding material and the ceramic to improve the bonding strength. In this regard, Patent Document 1 describes a bonding layer consisting of a metal layer of a wire mesh component and a bonding material primarily composed of In, thereby improving the bonding strength. However, there is room for improvement in the bonding strength of bonding layers containing In.

[0009] The present invention was made to solve at least part of the above-mentioned problems, and its object is to provide a joint that improves the bonding properties and reduces the residual stress caused by the difference in thermal expansion coefficients.

[0010] Solution for solving the problem

[0011] The present invention was made to solve at least a part of the above-mentioned problems and can be implemented in the following manner.

[0012] (1) According to one aspect of the present invention, a bonding body is provided. The bonding body comprises: a first member formed of ceramic; a second member formed of ceramic or metal; and a bonding layer disposed between the first member and the second member and having either In (indium) or Sn (tin) as the main component, and containing either Ti (titanium), Hf (hafnium), or Zr (zirconium), wherein the bonding layer has a compound containing either Ti, Hf, or Zr, and in a cross section along the stacking direction of the first member, the bonding layer, and the second member, the area ratio of the aforementioned compound formed in the first interface region between the first member and the bonding layer is 6% or more and 60% or less.

[0013] According to this configuration, the first component and the second component are bonded together by a bonding layer. The bonding layer contains In and / or Sn, which have poor wettability with ceramics, and a compound formed from any one of Ti, Hf, and Zr, which are active metals. The area occupied by this compound in the first interface region formed between the first component and the bonding layer is 6% to 60% or less. That is, because a certain amount of the compound containing the active metal is present in the first interface region, the bonding layer, with In or Sn as its main component, exhibits good wettability with the ceramic first component, thus improving the bonding strength with the first component. Furthermore, since In and Sn have low melting points, the first component and the second component are bonded at low temperatures. Since In and Sn are soft metals, the residual stress in the joint caused by the difference in thermal expansion coefficients is reduced. Therefore, the bonding strength between the first component and the second component is improved.

[0014] (2) In the above-mentioned joint, the aforementioned area ratio may be 6% or more and 30% or less.

[0015] According to this configuration, if the content of active metals such as Ti is high, there is a concern that the active metals may be oxidized. However, by limiting the upper limit of the area ratio in the first interface region, the oxidation of the active metals is suppressed. As a result, the adhesion between the first component and the bonding layer is improved.

[0016] (3) In the above-described assembly, the second member may be formed of metal and have a metal coating layer on its surface. The metal coating layer and the In or Sn contained in the bonding layer form an intermetallic compound. In the cross section along the stacking direction, the total intensity of each peak of the intermetallic compound in the X-ray diffraction of the second interface region formed between the second member and the bonding layer is less than 0.7 of the peak intensity of In or Sn.

[0017] According to this configuration, even if the second component is an Al alloy or similar material with poor wettability to In and Sn, the adhesion between the second component and the bonding layer is improved due to the presence of a metal coating layer on the surface that exhibits good wettability to In. Furthermore, in the second interface region formed between the second component and the bonding layer, an intermetallic compound is formed by the metal coating layer on the surface of the second component and either In or Sn, which are the main components of the bonding layer. The total peak intensity of the intermetallic compound in X-ray diffraction is less than 0.7 times the peak intensity of In or Sn. That is, the proportion of intermetallic compounds present in the second interface region is less than that of In or Sn, which are the main components of the bonding layer. By limiting the presence of brittle intermetallic compounds in the second interface region, the strength of the bonding layer is improved.

[0018] It should be noted that the present invention can be implemented in various ways, such as as a bonding body, a holding device, an electrostatic chuck, a semiconductor manufacturing apparatus and a system having the same, a method for manufacturing a bonding body, a method for manufacturing a semiconductor manufacturing apparatus, etc. Attached Figure Description

[0019] Figure 1 This is a schematic perspective view showing the appearance of the electrostatic chuck according to the first embodiment.

[0020] Figure 2 This is a schematic cross-sectional view of an electrostatic chuck.

[0021] Figure 3 This is an explanatory diagram of the first and second interface areas.

[0022] Figure 4 This is an explanatory diagram regarding the definition of the first interface area.

[0023] Figure 5 This is a flowchart of the manufacturing method of the electrostatic chuck according to this embodiment.

[0024] Figure 6 This is an explanatory diagram showing the relationship between the area ratio of the bonding layer compound in the first interface region and the evaluation results.

[0025] Figure 7 This is an explanatory diagram of the peak ratio of X-ray diffraction in the second interface region. Detailed Implementation

[0026] <Implementation Method>

[0027] Figure 1 This is a schematic perspective view showing the appearance of the electrostatic chuck (joint) 1 according to the first embodiment. Figure 2This is a schematic cross-sectional view of the electrostatic chuck 1. The electrostatic chuck 1 of this embodiment is, for example, included in an etching apparatus, and is a device that uses electrostatic attraction to attract and hold the wafer W; it can also be referred to as a semiconductor manufacturing apparatus. Figure 1 As shown, the electrostatic chuck 1 includes: a ceramic component (first component) 10 formed of ceramic; a metal component (second component) 20 formed of metal; and a bonding layer 30. In the electrostatic chuck 1, the ceramic component 10, the bonding layer 30, and the metal component 20 are stacked sequentially along the z-axis direction (vertical direction). In the electrostatic chuck 1, the ceramic component 10 and the metal component 20 are bonded by means of the bonding layer 30.

[0028] The ceramic component 10 is a roughly circular plate-shaped component formed of alumina (Al2O3). The diameter of the ceramic component 10 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the ceramic component 10 is, for example, about 1 mm to 10 mm.

[0029] like Figure 2 As shown, the ceramic component 10 is formed by combining two disk-shaped upper parts 11 and lower parts 12 of different areas along the stacking direction. Figure 2 As shown, the upper part 11 is located on the positive z-axis side of the ceramic component 10. In the planar direction, the area of ​​the upper part 11 is smaller than the area of ​​the lower part 12. It should be noted that the ceramic forming the ceramic component 10 can be aluminum nitride (AlN), zirconium oxide (ZrO2), silicon oxide (Si3N4), silicon carbide (SiC), yttrium oxide (Y2O3), etc.

[0030] A disc-shaped chuck electrode 100 is disposed inside the upper part 11. The chuck electrode 100 in this embodiment is formed of a conductive material (e.g., tungsten, molybdenum, etc.). The chuck electrode 100 is powered by a power source (not shown), thereby generating electrostatic attraction (adsorption force). Using electrostatic attraction, the wafer W is adsorbed and fixed on the upper surface, i.e., the mounting surface, which is a ceramic component 10.

[0031] Metal component 20 is a roughly circular, planar plate-shaped component made of stainless steel. The diameter of metal component 20 is, for example, approximately 220mm to 550mm (typically 220mm to 350mm), and the thickness is, for example, approximately 20mm to 40mm. Figure 2 As shown, a refrigerant flow path 200 is formed inside the metal component 20. When a refrigerant such as a fluorine-based inactive liquid and / or water flows through the refrigerant flow path 200, the ceramic component 10 is cooled by means of the bonding layer 30, and the wafer W placed on the ceramic component 10 is cooled. It should be noted that the metal type forming the metal component 20 can be copper (Cu), aluminum (Al), aluminum alloy, titanium (Ti), titanium alloy, etc.

[0032] A bonding layer 30 is disposed between the ceramic component 10 and the metal component 20, bonding the ceramic component 10 and the metal component 20. In this embodiment, the bonding layer 30 contains either indium (In) or tin (Sn) as a main component. It should be noted that the main component in this embodiment refers to a component containing 85 wt% or more. In addition, the bonding layer 30 contains either Ti (titanium), hafnium (Hf), or zirconium (Zr) and their compounds (hereinafter also referred to as "bonding layer compounds"). The bonding layer compounds in this embodiment include: oxides, products of reaction with the ceramic component 10 (first component), and compounds (solid solutions, intermetallic compounds) with either In or Sn.

[0033] Figure 3 This is an explanatory diagram of the first interface region AR1 formed between the ceramic component 10 and the bonding layer 30, and the second interface region AR2 formed between the metal component 20 and the bonding layer 30. Figure 3 The middle shows Figure 2 An enlarged cross-sectional view of region RG in this embodiment. The ceramic component 10, metal component 20, and bonding layer 30 are prepared separately and bonded by firing. The first interface region AR1 formed by firing is the boundary region where the ceramic forming the ceramic component 10 reacts with the active metal contained in the bonding layer 30. The second interface region AR2 is the boundary region where the metal forming the metal component 20 mixes with In or the like forming the bonding layer 30.

[0034] Figure 4 This is an explanatory diagram regarding the definition of the first interface region AR1. Figure 4 The image shows an enlarged cross-sectional view of the first interface region AR1. (See image for details.) Figure 4 As shown, the boundary BD between the ceramic component 10 and the bonding layer 30 sometimes appears as a curved surface (a curve in the cross-section) rather than a plane orthogonal to the lamination direction (a straight line in the cross-section). In this case, in this embodiment, 10 points Pt are obtained at equal intervals along a direction orthogonal to the lamination direction on the boundary BD. The virtual plane PL is calculated using the least squares method for the 10 points Pt. The region formed between the virtual plane PL and the plane at a distance L1 from the virtual plane towards the ceramic component 10 side is defined as the first interface region AR1. It should be noted that the method for determining the second interface region AR2 is the same as that for the first interface region AR1, which is the region formed between the virtual plane and the plane at a predetermined distance from the virtual plane towards the metal component 20 side.

[0035] In this embodiment, the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. It should be noted that, in addition to the bonding layer compound, the first interface region AR1 also contains elemental metals such as In and pores. It should also be noted that, more preferably, the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 30% or less.

[0036] Figure 5 This is a flowchart of the manufacturing method of the electrostatic chuck 1 according to this embodiment. Figure 5 In the manufacturing process shown, firstly, the ceramic component 10 and the metal component 20 are prepared as separate, unjoined components (step S1). A chuck electrode 100 is disposed inside the ceramic component 10 before joining. Additionally, a refrigerant flow path 200 is formed in the metal component 20 before joining.

[0037] On one side of the prepared ceramic component 10, a bonding paste is printed as the base for the bonding layer (step S2). The bonding paste is primarily composed of In or Sn, and contains 0.05 wt% to 12 wt% of any one of Ti, Hf, and Zr. The ceramic component 10 with the printed bonding paste is then dried (step S3). The drying process is performed, for example, at 70°C for 30 minutes in atmospheric conditions. Next, the dried ceramic component 10 is baked (step S4). The baking process is performed, for example, in a vacuum at a temperature of 400°C to 600°C for 30 minutes.

[0038] On one surface of the metal component 20 prepared in step S1, a coating of gold (Au) or the like is applied (step S5). In the coating process, any metal or alloy of Au, silver (Ag), Cu, platinum (Pt), and palladium (Pd) is deposited by vapor deposition with a thickness ranging from 0.5 μm to 1.0 μm. Alternatively, coating can be performed by plating or sputtering, in addition to vapor deposition. It should be noted that the metal or alloy layer formed on the surface of the metal component 20 by the coating process is equivalent to a metal coating layer. The coated metal component 20 is then annealed (step S6). The annealing process is performed, for example, in a vacuum at a temperature of 200°C to 400°C.

[0039] The ceramic component 10, which underwent baking in step S4, is joined to the metal component 20, which underwent annealing in step S6 (step S7). The joining process is performed by firing, for example, in a vacuum at a temperature between 200°C and 600°C, with the surface of the ceramic component 10 having a bonding paste printed on one side in contact with the surface of the metal component 20 having a coating treatment on the other side. Alternatively, the joining can be performed with an In foil sandwiched between the ceramic component 10 and the metal component 20. It should be noted that the firing atmosphere can be a nitrogen atmosphere or an argon (Ar) atmosphere. The electrostatic chuck 1 is manufactured by machining the joined body to the required dimensions.

[0040] Figure 6 This is an explanatory graph showing the relationship between the area ratio of the bonding layer compound in the first interface region AR1 in Examples 1-17 and Comparative Examples 1-6 and the evaluation results. Figure 6 As shown, based on the "sealing strength", the failure mode of the fracture surface (i.e., the "fracture surface"), and after baking ( Figure 5 Step S4) assesses the "Appearance" of the bonding paste surface. For each sample, the "Judgment" column is evaluated using four grades: A through D. The composition ratio (wt%) of the bonding paste for each sample is as follows: Figure 6 As shown.

[0041] The bonding strength is a value obtained from a bonding strength test of the first interface region AR1 using a φ10mm, 10mm long SUS round bar. In the bonding strength test, a cantilever bending strength test was performed on a sample prepared by printing In-Ti paste onto ceramic, drying, and then baking. The evaluation of the fracture surface is as follows: the residual rate of In or Sn in the fracture surface at fracture is image-processed to calculate the area ratio, and evaluated according to the calculated area ratio using four levels, A to D, as described below. It should be noted that since the strength of intermetallic compounds is less than that of In and Sn, if the bonding layer 30 contains a large amount of intermetallic compounds, the portion of the intermetallic compound with the lowest strength will fracture, and the fracture surface will contain a large amount of intermetallic compounds. On the other hand, if the content of intermetallic compounds is low, the portions of In and Sn, which are soft metals, will fracture. In other words, the higher the proportion of In or Sn contained in the fracture surface, the lower the residual rate of intermetallic compounds, and the higher the strength of the bonding layer 30. Therefore, a higher area ratio of In or Sn in the fracture surface is preferred.

[0042] A: The residue rate is over 60%.

[0043] B: The residue rate is above 30% but less than 60%.

[0044] C: Residual rate greater than 0% and less than 30%

[0045] D: Residual rate is 0%

[0046] The appearance refers to the appearance of the bonding paste after baking before the ceramic component 10 and the metal component 20 are joined. If the active metal, such as Ti, oxidizes, a hazy appearance accompanying oxidation will occur. If the active metal oxidizes, the bonding strength of the bonding layer 30 will decrease; therefore, it is preferable to have a metallic luster without oxidation of the active metal. In the evaluation of the appearance, "metallic luster" or "hazy" with some haziness is considered acceptable. It should be noted that... Figure 6 All samples shown were baked at 600°C under vacuum for 30 minutes. The area ratio of the bonding layer compound is used as... Figure 4 The area ratio of the bonding layer compound in the first interface region AR1 was calculated when the distance L1 was set to 15 μm.

[0047] exist Figure 6 In the sample evaluation shown, samples with a cross-section evaluation of B or higher and an appearance of metallic luster or fogging are judged as acceptable (A, B, or C). On the other hand, samples with a cross-section evaluation of C or lower, or an appearance of "oxidation / fogging" that is unacceptable, are evaluated as unacceptable (D).

[0048] like Figure 6 As shown, in Examples 1-17, where the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less, the cross-sectional evaluation is rated as A or B. In particular, in Examples 1-12, where the area ratio is 6% or more and 30% or less, the appearance is "metallic luster," and the samples are rated A or B. On the other hand, in Comparative Examples 1-4, where the area ratio is less than 6%, the cross-sectional evaluation is C or D, and the sample evaluation is D. Furthermore, in Comparative Examples 5 and 6, where the area ratio exceeds 60%, although the cross-sectional evaluation is B, oxidation / fogging is confirmed in the appearance, and the sample evaluation is D. The adhesion strength of the samples in Comparative Examples 1-6 is less than 20 MPa, which is lower than the adhesion strength of Examples 1-17, which is 20 MPa or more.

[0049] Figure 7 This is an explanatory diagram showing the peak ratio of X-ray diffraction (XRD) of the second interface region AR2 in Examples 18-32 and Comparative Examples 7-9. Figure 7 In the second interface region AR2, the total peak intensity of the intermetallic compound relative to the peaks of the In or Sn XRD is expressed as the "peak ratio". Additionally, in... Figure 7 The diagram shows the "bonding layer compound area ratio (%)", which represents the area ratio of the bonding layer compound in the first interface region AR1, and the coating treatment during the manufacturing of the metal component 20. Figure 5In step S5), the coating type and thickness of the vapor-deposited metal coating are specified as "coating (μm)", the annealing temperature in step S6 after coating is specified as "pre-heat treatment (°C)", and the thermal conductivity test result is specified as "thermal conductivity test determination". A low peak ratio indicates a low amount of brittle intermetallic compounds remaining, which is a preferred state. In the "thermal conductivity test determination", each sample that has undergone 1000 cycles of thermal cycling from -40°C to 110°C is placed on a hot plate heated to 100°C to determine its thermal conductivity. In the thermal conductivity test, the surface temperature and temperature distribution of the joint are measured using a radiation thermometer, and the determination is made as follows.

[0050] A: The overall surface temperature reaches 100℃ within 2 seconds.

[0051] B: Within 2 seconds, a portion of the surface temperature reaches 100°C.

[0052] C: Within 2 seconds, there are no parts of the surface that reach 100°C.

[0053] exist Figure 7 In each of the samples shown in Examples 18-32 and Comparative Examples 7-9, a paste composed of In or Sn and Ti was printed on the bonding surface of the ceramic component 10 before bonding. Figure 5 After step S2), drying (step S3), baking at 600℃ for 30 minutes (step S4). Figure 7 As shown, the composition ratio (wt%) of the bonding paste in each sample, except for Comparative Example 9, is the same, i.e., 2.00 wt%, containing Ti as an active metal.

[0054] The sum of the peak intensities of intermetallic compounds in XRD divided by the peak intensity of In or Sn. Figure 7 In Examples 18-32, where the "peak ratio" is less than 0.7, the result of the "thermal conductivity test" is A or B. Among them, the result of the "thermal conductivity test" in Examples 18-21, where the "peak ratio" is less than 0.2, is excellent and is A. On the other hand, the result of the "thermal conductivity test" in Comparative Examples 7-9, where the "peak ratio" is 0.7 or higher, is C.

[0055] As described above, in the electrostatic chuck 1 of this embodiment, a bonding layer 30 is disposed between the ceramic component 10 and the metal component 20, and bonds the ceramic component 10 and the metal component 20. The bonding layer 30 contains either In or Sn as a main component. The bonding layer 30 contains either Ti, Hf, or Zr, and a bonding layer compound formed therefrom. In the first interface region AR1 formed between the ceramic component 10 and the bonding layer 30, the area ratio occupied by the bonding layer compound is 6% or more and 60% or less. In the bonding layer 30 of this embodiment, In and / or Sn, which have poor wettability to the ceramic component 10, are contained, and a bonding layer compound formed from either Ti, Hf, or Zr, which are active metals. The area ratio occupied by the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. That is, because a certain amount of bonding layer compound containing active metal is present in the first interface region, the bonding layer 30, mainly composed of In or Sn, exhibits good wettability to the ceramic component 10, thus improving the bonding strength between the ceramic component 10 and the bonding layer 30. Furthermore, since In and Sn have low melting points, the ceramic component 10 and the metal component 20 are bonded at low temperatures. Because In and Sn are soft metals, the residual stress in the joint caused by the difference in thermal expansion coefficients is reduced. As a result, the bonding strength between the ceramic component 10 (first component) and the metal component 20 (second component) is improved.

[0056] In addition, Figure 6 In Examples 1-12 shown, the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 30% or less. In this embodiment, if the content of active metals such as Ti is high, there is a concern that the active metals may be oxidized. However, by limiting the upper limit of the area ratio in the first interface region AR1, the oxidation of the active metals can be suppressed. As a result, the bonding strength between the ceramic component 10 and the bonding layer 30 is improved.

[0057] In addition, Figure 7 In Examples 18-32 shown, the total peak intensity of the intermetallic compound in XRD is divided by the peak intensity of In or Sn. Figure 7 The peak ratio is less than 0.7. Therefore, in this embodiment, the proportion of intermetallic compounds in the second interface region AR2 is less than that of In or Sn, which are the main components of the bonding layer. By limiting the presence of brittle intermetallic compounds in the second interface region AR2, the strength of the bonding layer 30 is improved.

[0058] <Modifications of this embodiment>

[0059] This invention is not limited to the embodiments described above, and can be implemented in various ways without departing from its spirit, for example, the following modifications are also possible.

[0060] In the above embodiments, deformation can be performed on a bond in which the bonding layer 30 contains either In or Sn as a main component, and contains either Ti, Hf, or Zr, as well as a bonding layer compound formed therefrom, and the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. Regarding the type and proportion of metals contained in the bonding layer 30, for example, it is possible to... Figure 6 , Figure 7 The modifications are as described in Examples 1 to 32. In the above embodiments, the second component bonded to the ceramic component 10 by means of the bonding layer 30 is a metal component 20, but it can also be a ceramic component formed of ceramic. In this case, the bonding layer compound is formed in such a way that the area ratio in the second interface region AR2 is more than 6% and less than 60%, thus improving the bonding strength between the bonding layer 30 and the metal component 20 (the second component).

[0061] exist Figure 5 The manufacturing process of the electrostatic chuck 1 shown is an example of a process in which the bonding layer compound in the first interface region AR1 becomes a bond with a content of 6% to 60% or more. It can also be described as follows: Figure 5 The bond can be manufactured using manufacturing methods other than those used in the manufacturing process. For example, the temperature and atmosphere conditions in the drying process (step S3), baking process (step S4), annealing process (step S6), and bonding process (step S7) can be varied within the range of known technologies. Furthermore, the composition ratio of the bonding paste printed in the printing process (step S2) can be varied within the range where the area ratio of the bonding layer compound in the first interface region AR1 is 6% or more and 60% or less. The type of metal coated in the coating process (step S5) and the thickness of the metal film can also be varied within the range where the total peak intensity of the intermetallic compound in the X-ray diffraction of the second interface region is less than 0.7 of the peak intensity of In or Sn.

[0062] The electrostatic chuck 1 described in the above embodiment can be either a bonding body or a semiconductor manufacturing apparatus, but the relationship between the bonding body and the semiconductor manufacturing apparatus can be modified. For example, the semiconductor manufacturing apparatus may include: an electrostatic chuck; a power source for supplying power to the chuck electrodes 100 of the electrostatic chuck; and a refrigerant supply unit for supplying refrigerant to the refrigerant flow path 200 of the electrostatic chuck. In this case, the electrostatic chuck may include a bonding body and an electrode member in which the chuck electrodes 100 are disposed. In this case, the bonding body may include a ceramic member (first member) 10; a second member formed of ceramic or metal; and a bonding layer 30 disposed between the ceramic member 10 and the second member.

[0063] The present solution has been described above based on its embodiments and variations. However, the embodiments described above are for the purpose of facilitating understanding of the present solution and are not intended to limit the present solution. The present solution can be modified and improved without departing from its spirit and claims, and its equivalents are included in the present solution. In addition, if a technical feature is not required by the description in this specification, it can be appropriately deleted.

[0064] The present invention can also be implemented in the following ways.

[0065] [Application Example 1]

[0066] A joint, characterized in that it comprises:

[0067] The first component is made of ceramic;

[0068] The second component, which is formed of ceramic or metal; and

[0069] A bonding layer, disposed between the aforementioned first component and the aforementioned second component, is primarily composed of either In (indium) or Sn (tin), and contains either Ti (titanium), Hf (hafnium), or Zr (zirconium).

[0070] The aforementioned bonding layer has a compound comprising any one of the aforementioned Ti, Hf, and Zr.

[0071] In a cross section along the stacking direction of the aforementioned first member, the aforementioned bonding layer, and the aforementioned second member, the area ratio of the aforementioned compound formed in the first interface region between the aforementioned first member and the aforementioned bonding layer is 6% or more and 60% or less.

[0072] [Application Example 2]

[0073] The joint according to Application Example 1 is characterized in that,

[0074] The aforementioned area ratio is between 6% and 30%.

[0075] [Application Example 3]

[0076] The joint according to Application Example 1 or Application Example 2 is characterized in that,

[0077] The aforementioned second component is made of metal and has a metal coating on its surface.

[0078] The aforementioned metal coating layer and the aforementioned bonding layer contain In or Sn to form an intermetallic compound.

[0079] In a cross section along the aforementioned stacking direction, the total peak intensity of the aforementioned intermetallic compound in the X-ray diffraction of the second interface region formed between the aforementioned second member and the aforementioned bonding layer is less than 0.7 times the peak intensity of In or Sn.

[0080] [Application Example 4]

[0081] A semiconductor manufacturing apparatus, characterized in that it comprises a bonding body as described in any one of Application Examples 1 to 3.

[0082] Explanation of reference numerals in the attached figures

[0083] 1…Electrostatic chuck (joint)

[0084] 10… Ceramic component (Component 1)

[0085] 11…upper part

[0086] 12…lower part

[0087] 20… Metal component (2nd component)

[0088] 30… Bonding layer

[0089] 100… Chuck Electrode

[0090] 200…refrigerant flow path

[0091] AR1…First Interface Area

[0092] AR2…Second Interface Area

[0093] BD…boundary

[0094] L1…distance

[0095] PL...Imaginary Plane

[0096] Pt…point

[0097] RG… region

[0098] W… wafer

Claims

1. A joint, characterized in that, have: The first component is made of ceramic; The second component, which is formed of ceramic or metal; and A bonding layer, disposed between the first component and the second component, is primarily composed of either In (indium) or Sn (tin), and contains either Ti (titanium), Hf (hafnium), or Zr (zirconium). The bonding layer has a compound comprising any one of Ti, Hf, and Zr. In a cross section along the stacking direction of the first member, the bonding layer, and the second member, the area occupied by the compound in the first interface region between the first member and the bonding layer is 6% or more and 60% or less.

2. The joint according to claim 1, characterized in that, The area ratio is above 6% and below 30%.

3. The joint according to claim 1, characterized in that, The second component is made of metal and has a metal coating on its surface. The metal coating layer and the In or Sn contained in the bonding layer form an intermetallic compound. In a cross section along the stacking direction, the total peak intensity of the intermetallic compound in the X-ray diffraction of the second interface region formed between the second member and the bonding layer is less than 0.7 of the peak intensity of In or Sn.

4. A semiconductor manufacturing apparatus, characterized in that, The assembly comprises any one of claims 1 to 3.

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