Energy conversion device and method for manufacturing energy conversion device

Abstract

An energy conversion device is provided. The energy conversion device includes: a first substrate; a first electrode layer located on the first substrate; a hole transport layer located on a side of the first electrode layer away from the first substrate; a perovskite layer located on a side of the hole transport layer away from the first substrate; an electron transport layer located on a side of the perovskite layer away from the first substrate; and a second electrode layer located on a side of the electron transport layer away from the first substrate. The first electrode layer includes a first portion and a second portion spaced apart from each other. The first portion is electrically isolated from the second electrode layer. The second portion is electrically connected to the second electrode layer.

Description

Technical Field

[0001] This invention relates to energy conversion technology, and more specifically, to an energy conversion device and a method for manufacturing the energy conversion device. Background Technology

[0002] With the continued growth of global energy demand and increasing environmental awareness, the development and utilization of clean and renewable energy have become increasingly important. As a vital renewable energy source, solar energy offers the advantage of being inexhaustible. Photovoltaic cells, especially perovskite solar cells, have attracted widespread attention and research interest due to their high photoelectric conversion efficiency and relatively simple manufacturing process. Summary of the Invention

[0003] In one aspect, this disclosure provides an energy conversion device, comprising: a first substrate; a first electrode layer located on the first substrate; a hole transport layer located on a side of the first electrode layer away from the first substrate; a perovskite layer located on a side of the hole transport layer away from the first substrate; an electron transport layer located on a side of the perovskite layer away from the first substrate; and a second electrode layer located on a side of the electron transport layer away from the first substrate; wherein the first electrode layer includes a first portion and a second portion spaced apart from each other; the first portion is electrically isolated from the second electrode layer; and the second portion is electrically connected to the second electrode layer.

[0004] Optionally, the first portion contacts the hole transport layer; and the second portion contacts the hole transport layer.

[0005] Optionally, the energy conversion device includes a plurality of energy conversion units and one or more gaps that space the plurality of energy conversion units apart.

[0006] Optionally, each of the plurality of energy conversion units includes: a first portion and a second portion of the first electrode layer; a hole transport block of the hole transport layer located on the first portion and the second portion; a perovskite block of the perovskite layer located on the side of the hole transport block away from the first portion and the second portion; an electron transport block of the electron transport layer located on the side of the perovskite block away from the hole transport block; and a second electrode block of the second electrode layer located on the side of the electron transport block away from the perovskite block.

[0007] Optionally, a second electrode block extends through a corresponding groove in one or more grooves to connect to the second portion, the one or more grooves extending through the electron transport block, the perovskite block, and the hole transport block.

[0008] Optionally, the energy conversion device further includes at least one of the following: a hole passivation layer located on the side of the hole transport layer away from the first substrate; a perovskite passivation layer located on the side of the perovskite layer away from the first substrate; an electron modification layer located on the side of the electron transport layer away from the first substrate; or a second substrate located on the side of the second electrode layer away from the first substrate.

[0009] Optionally, each energy conversion unit further includes at least one of the following: a hole passivation block of the hole passivation layer located on the side of the hole transport block away from the first portion and the second portion; a perovskite passivation block of the perovskite passivation layer located on the side of the perovskite block away from the hole passivation block; or an electron modification block of the electron modification layer located on the side of the electron transport block away from the perovskite passivation block.

[0010] Optionally, the energy conversion device further includes one or more recesses; wherein each of the one or more recesses extends through the second electrode layer, the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the first electrode layer; the sidewalls of each of the one or more recesses have an inclination angle in the range of 45 degrees to 90 degrees; each of the one or more recesses extends through the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the second portion; each recess is configured to receive a portion of the second electrode layer; the portion of the second electrode layer extends into the corresponding recess to connect to the second portion; and the sidewalls of each recess have an inclination angle in the range of 45 degrees to 90 degrees.

[0011] Optionally, the energy conversion device further includes: an auxiliary electrode layer located on the side of the second electrode layer away from the first substrate; one or more grooves; and one or more second grooves; wherein each groove in the one or more grooves extends through the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the second portion; each groove in the one or more grooves is configured to receive a portion of the second electrode layer; the portion of the second electrode layer extends into the corresponding groove to connect to the second portion; each second groove in the one or more second grooves is located on the side of the portion of the second electrode layer in the corresponding groove away from the first electrode layer; the auxiliary electrode layer includes one or more auxiliary electrode blocks; each second groove is configured to receive a corresponding electrode block in the one or more auxiliary electrode blocks; and each electrode block in the one or more auxiliary electrode blocks contacts the portion of the second electrode layer in the corresponding groove.

[0012] Optionally, the energy conversion device further includes: a planarization layer located on the side of the second electrode layer away from the first substrate; one or more grooves; and one or more second grooves; wherein each groove in the one or more grooves extends through the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the second portion; each groove in the one or more grooves is configured to receive a portion of the second electrode layer; the portion of the second electrode layer extends into the corresponding groove to connect to the second portion; each second groove in the one or more second grooves is located on the side of the portion of the second electrode layer in the corresponding groove away from the first electrode layer; the planarization layer includes one or more first planarization blocks and one or more second planarization blocks; each gap in the one or more gaps is configured to receive a corresponding first planarization block in the one or more first planarization blocks; and each second groove is configured to receive a corresponding second planarization block in the one or more second planarization blocks.

[0013] Optionally, the energy conversion device further includes: a first terminal; a second terminal; a first lead connected to the first terminal and the first portion; and a second lead connected to the second terminal.

[0014] Optionally, the first lead is located on the side of the first portion away from the first substrate; and the second lead is located on the side of the second portion away from the first substrate.

[0015] Optionally, the first lead and the first portion are located on the same layer and are part of the overall structure; and the second lead and the second portion are located on the same layer and are part of the overall structure.

[0016] Optionally, the first lead includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate; the first sublayer and the first portion of the first lead are located in the same layer and are part of the overall structure; the second lead includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate; and the first sublayer and the second portion of the second lead are located in the same layer and are part of the overall structure.

[0017] Optionally, the energy conversion device further includes a barrier layer located on the first substrate, the barrier layer being configured to accommodate an encapsulation layer and a plurality of energy conversion units; wherein the orthographic projection of the barrier layer on the first substrate is a ring; the orthographic projection of the first lead on the first substrate is substantially within the ring; the orthographic projection of the second lead on the first substrate is substantially within the ring; the orthographic projection of the first terminal on the first substrate is substantially non-overlapping with the ring; the orthographic projection of the second terminal on the first substrate is substantially non-overlapping with the ring; the first lead and the first portion are located in the same layer and are part of an integral structure; the second lead and the second portion... The first terminal includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate; the first sublayer of the first terminal and the first lead are located on the same layer and are part of the overall structure; the second terminal includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate; the first sublayer of the second terminal and the second lead are located on the same layer and are part of the overall structure; the orthographic projection of the second sublayer of the first terminal on the first substrate substantially does not overlap with the ring; and the orthographic projection of the second sublayer of the second terminal on the first substrate substantially does not overlap with the ring.

[0018] Optionally, the second lead is connected to a portion of the second electrode layer; the first lead and the first portion are located in the same layer and are part of the overall structure; and the second lead and the portion of the second electrode layer are located in the same layer and are part of the overall structure.

[0019] Optionally, the energy conversion device further includes: a first terminal; a second terminal; a first lead connected to the first terminal and to a first electrode portion of the second electrode layer; and a second lead connected to the second terminal and to a second electrode portion of the second electrode layer; wherein the first electrode portion of the second electrode layer is connected to the first portion; the second electrode portion of the second electrode layer is connected to the second portion; and the first electrode portion of the second electrode layer is electrically isolated from the second electrode portion.

[0020] In another aspect, this disclosure provides a method for manufacturing an energy conversion device, comprising: forming a first electrode layer on a first substrate; forming a hole transport layer on a side of the first electrode layer away from the first substrate; forming a perovskite layer on the side of the hole transport layer away from the first substrate; forming an electron transport layer on the side of the perovskite layer away from the first substrate; and forming a second electrode layer on the side of the electron transport layer away from the first substrate; wherein forming the first electrode layer includes forming a first portion and forming a second portion spaced apart from the first portion; the first portion is electrically isolated from the second electrode layer; and the second portion is electrically connected to the second electrode layer.

[0021] Optionally, the method further includes: forming a first lead on the first portion; forming a second lead on the second portion; welding the first lead to the first portion using an ultrasonic cold welding process; and welding the second lead to the second portion using an ultrasonic cold welding process.

[0022] Optionally, the method further includes: forming a first lead on the first portion; forming a second lead on the second electrode layer; welding the first lead to the first portion using an ultrasonic cold welding process; and welding the second lead to the second electrode layer using an ultrasonic cold welding process. Attached Figure Description

[0023] The following figures are merely illustrative examples based on various disclosed embodiments and are not intended to limit the scope of the invention.

[0024] Figure 1 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure.

[0025] Figure 2 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure.

[0026] Figure 3 This is a schematic diagram illustrating the structure of a corresponding energy conversion unit in an energy conversion apparatus according to some embodiments of the present disclosure.

[0027] Figure 4 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0028] Figure 5 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0029] Figure 6 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0030] Figure 7 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0031] Figure 8 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure.

[0032] Figure 9 This illustration shows one or more gaps and one or more grooves in an energy conversion device according to some embodiments of the present disclosure.

[0033] Figure 10 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0034] Figure 11 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0035] Figure 12 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0036] Figure 13 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0037] Figure 14 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure.

[0038] Figure 15 One or more recesses are shown in an energy conversion device according to some embodiments of the present disclosure.

[0039] Figure 16 This illustration shows one or more gaps and one or more second grooves in an energy conversion device according to some embodiments of the present disclosure.

[0040] Figure 17 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0041] Figure 18 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0042] Figure 19 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0043] Figure 20 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0044] Figure 21 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure.

[0045] Figure 22 One or more recesses are shown in an energy conversion device according to some embodiments of the present disclosure.

[0046] Figure 23 This illustration shows one or more gaps and one or more second grooves in an energy conversion device according to some embodiments of the present disclosure.

[0047] Figure 24 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0048] Figure 25 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0049] Figure 26 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0050] Figure 27 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure.

[0051] Figure 28 This is a plan view of an energy conversion device according to some embodiments of the present disclosure.

[0052] Figure 29 It is along Figure 28 A cross-sectional view of the energy conversion device along line A-A' in the diagram.

[0053] Figure 30 This is a plan view of an energy conversion device according to some embodiments of the present disclosure.

[0054] Figure 31 It is along Figure 30 A cross-sectional view of the energy conversion device along the B-B' line.

[0055] Figure 32 It is along Figure 30 A cross-sectional view of the energy conversion device along the C-C' line.

[0056] Figure 33 This is a plan view of an energy conversion device according to some embodiments of the present disclosure.

[0057] Figure 34 It is along Figure 33 A cross-sectional view of the energy conversion device along the D-D' line.

[0058] Figure 35 It is along Figure 33 A cross-sectional view of the energy conversion device along the E-E' line.

[0059] Figure 36 This is a plan view of an energy conversion device according to some embodiments of the present disclosure.

[0060] Figure 37 It is along Figure 36 A cross-sectional view of the energy conversion device along the F-F' line.

[0061] Figure 38 It is along Figure 36 A cross-sectional view of the energy conversion device along the G-G' line.

[0062] Figure 39 This is a plan view of an energy conversion device according to some embodiments of the present disclosure.

[0063] Figure 40 It is along Figure 39 A cross-sectional view of the energy conversion device along the H-H' line.

[0064] Figure 41 It is along Figure 39 A cross-sectional view of the energy conversion device along the I-I' line.

[0065] Figure 42 This is a schematic diagram illustrating the structure of a corresponding energy conversion unit in an energy conversion apparatus according to some embodiments of the present disclosure.

[0066] Figure 43 This is a schematic diagram illustrating the structure of a corresponding energy conversion unit in an energy conversion apparatus according to some embodiments of the present disclosure.

[0067] Figure 44 The process of soldering leads to electrodes is shown in some embodiments of this disclosure.

[0068] Figure 45 This is a plan view of an energy conversion device according to some embodiments of the present disclosure.

[0069] Figure 46 It is along Figure 45 A cross-sectional view of the energy conversion device along the J-J' line.

[0070] Figure 47 This is a plan view of an energy conversion device according to some embodiments of the present disclosure.

[0071] Figure 48 It is along Figure 47 A cross-sectional view of the energy conversion device of the K-K' line in the diagram. Detailed Implementation

[0072] This disclosure will now be described in more detail with reference to the following embodiments. It should be noted that the following description of some embodiments presented herein is for illustrative and descriptive purposes only. It is not exhaustive or limited to the precise forms disclosed.

[0073] With the increasing demand for energy and growing environmental awareness, solar energy, as a clean and renewable energy source, has significant development and utilization value. As a novel type of solar cell, perovskite solar cells have attracted widespread attention due to their high photoelectric conversion efficiency and simple manufacturing process. However, the stability of perovskite solar cells remains a challenge, and there is still room for improvement in their photoelectric conversion efficiency. Therefore, developing efficient and stable perovskite solar cells has significant practical application value.

[0074] Therefore, this disclosure particularly provides an energy conversion device and a method of manufacturing an energy conversion device, which substantially avoids one or more problems caused by the limitations and disadvantages of related technologies. In one aspect, this disclosure provides an energy conversion device. In some embodiments, the energy conversion device includes a first substrate; a first electrode layer located on the first substrate; a hole transport layer located on the side of the first electrode layer away from the first substrate; a perovskite layer located on the side of the hole transport layer away from the first substrate; an electron transport layer located on the side of the perovskite layer away from the first substrate; and a second electrode layer located on the side of the electron transport layer away from the first substrate. Optionally, the first electrode layer includes a first portion and a second portion spaced apart from each other. Optionally, the first portion is electrically isolated from the second electrode layer. Optionally, the second portion is electrically connected to the second electrode layer.

[0075] Figure 1 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure. Reference Figure 1In some embodiments, the energy conversion device includes a first substrate BS1; a first electrode layer E1 (e.g., an anode layer) located on the first substrate BS1; a hole transport layer HTL located on the side of the first electrode layer E1 away from the first substrate BS1; a hole passivation layer HPL located on the side of the hole transport layer HTL away from the first substrate BS1; a perovskite layer PL located on the side of the hole passivation layer HPL away from the first substrate BS1; a perovskite passivation layer PPL located on the side of the perovskite layer PL away from the first substrate BS1; an electron transport layer ETL located on the side of the perovskite passivation layer PPL away from the first substrate BS1; an electron modification layer EML located on the side of the electron transport layer ETL away from the first substrate BS1; a second electrode layer E2 (e.g., a cathode layer) located on the side of the electron modification layer EML away from the first substrate BS1; and a second substrate BS2 located on the side of the second electrode layer E2 away from the first substrate BS1.

[0076] Various suitable conductive materials can be used to fabricate the first electrode layer E1. In some embodiments, the first electrode layer E1 comprises a conductive metal oxide. Optionally, the first electrode layer E1 comprises a transparent conductive metal oxide. Examples of conductive metal oxide materials suitable for fabricating the first electrode layer E1 include fluorine-doped tin oxide and indium tin oxide.

[0077] The conductive material for fabricating the first electrode layer E1 can be deposited on the first substrate BS1 using various suitable methods. For example, physical vapor deposition or reactive plasma deposition can be used to deposit the conductive material for fabricating the first electrode layer E1.

[0078] In some embodiments, the thickness of the first electrode layer E1 is in the range of 100 nm to 700 nm, for example, 100 nm to 200 nm, 200 nm to 300 nm, 300 nm to 400 nm, 400 nm to 500 nm, 500 nm to 600 nm, or 600 nm to 700 nm. The inventors of this disclosure have found that if the thickness is less than 100 nm, the resistance of the first electrode layer E1 increases; if the thickness is greater than 700 nm, the transmittance of the first electrode layer E1 decreases, adversely affecting the photoelectric conversion efficiency.

[0079] Various suitable hole transport materials can be used to fabricate hole transport layers (HTLs). Examples of hole transport materials suitable for fabricating HTLs include doped nickel oxide, difluoreneaminocarbazole, and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. Optionally, the dopant used to dope nickel oxide to increase conductivity is a metal oxide. Examples of dopants used to dope nickel oxide to increase conductivity include one or more of magnesium oxide, lithium oxide, tin oxide, and copper oxide.

[0080] Hole transport material for fabricating the hole transport layer HTL can be deposited on the first electrode layer E1 using various suitable methods. For example, physical vapor deposition, reactive plasma deposition, or coating methods can be used to deposit the hole transport material for fabricating the hole transport layer HTL.

[0081] In some embodiments, the thickness of the hole transport layer (HTL) is in the range of 10 nm to 40 nm, for example, 10 nm to 15 nm, 15 nm to 20 nm, 20 nm to 25 nm, 25 nm to 30 nm, 30 nm to 35 nm, or 35 nm to 40 nm. The inventors of this disclosure have found that if the thickness is less than 10 nm, complete coverage of the first electrode layer (E1) cannot be guaranteed; if the thickness is greater than 40 nm, the transmittance of the hole transport layer (HTL) decreases, adversely affecting the photoelectric conversion efficiency.

[0082] Various suitable hole passivation materials can be used to fabricate the hole passivation layer (HPL). In some embodiments, the hole passivation layer (HPL) comprises an insulating oxide material. Examples of insulating oxide materials suitable for fabricating the hole passivation layer (HPL) include alumina, silicon dioxide, and zirconium dioxide. The hole passivation layer (HPL) is a critical component in power conversion devices. The main function of the hole passivation layer (HPL) is to effectively reduce defect states at the surface and interface of the perovskite layer, thereby significantly reducing the likelihood of charge recombination and improving charge transport efficiency. By introducing this highly efficient passivation material between the hole transport layer (HTL) and the perovskite layer (PL), the hole passivation layer (HPL) not only improves photoelectric conversion efficiency but also significantly enhances the long-term stability and reliability of the power conversion device. The presence of the hole passivation layer (HPL) ensures the efficient operation of the power conversion device while providing extended lifetime and excellent performance.

[0083] Hole passivation material for fabricating the hole passivation layer (HPL) can be deposited on the hole transport layer (HTL) using various suitable methods. For example, reactive plasma deposition, atomic layer deposition, or magnetron sputtering can be used to deposit the hole passivation material for fabricating the hole passivation layer (HPL).

[0084] In some embodiments, the hole passivation layer HPL has a thickness of no more than 1 nm, for example, no more than 0.95 nm, no more than 0.90 nm, no more than 0.85 nm, no more than 0.80 nm, no more than 0.75 nm, no more than 0.70 nm, no more than 0.65 nm, no more than 0.60 nm, no more than 0.55 nm, or no more than 0.50 nm. The inventors of this disclosure have discovered that if the thickness is greater than 1 nm, the hole passivation layer HPL cannot form a tunneling effect, resulting in the formation of an insulating barrier between the hole transport layer HTL and the perovskite layer PL.

[0085] Various suitable perovskite materials can be used to manufacture the perovskite layer PL. In some embodiments, the perovskite layer PL comprises organic or inorganic perovskite materials. Examples of inorganic perovskite materials suitable for manufacturing the perovskite layer PL include cesium lead iodide, cesium lead bromide, cesium tin iodide, cesium tin bromide, rubidium lead iodide, rubidium lead bromide, and formamidinium cesium lead iodide. Examples of organic perovskite materials suitable for manufacturing the perovskite layer PL include methyl lead iodide, methyl lead bromide, formamidinium lead iodide, formamidinium lead bromide, and methylformamidinium lead iodide.

[0086] Various suitable methods can be used to deposit the perovskite material for fabricating the perovskite layer PL onto the hole passivation layer HPL. For example, a coating method or a combination of evaporation and coating methods can be used to deposit the perovskite material for fabricating the perovskite layer PL.

[0087] In some embodiments, the perovskite layer PL has a thickness in the range of 300 nm to 700 nm, for example, 300 nm to 400 nm, 400 nm to 500 nm, 500 nm to 600 nm, or 600 nm to 700 nm. The inventors of this disclosure have found that a thickness of 300 nm is generally sufficient to absorb visible light below 800 nm due to the excellent light absorption properties of perovskite. When the perovskite thickness exceeds 1 μm, the carrier migration distance increases, which leads to internal recombination of holes and electrons. Furthermore, an excessively thick perovskite layer increases internal defects, thereby affecting efficiency.

[0088] Various suitable perovskite passivation materials can be used to manufacture perovskite passivation layers (PPLs). In some embodiments, the perovskite passivation layer (PPL) includes a passivation material for enhancing the performance and stability of the perovskite layer. Examples of perovskite passivation materials suitable for manufacturing perovskite passivation layers (PPLs) include inorganic or organic perovskite passivation materials. Examples of inorganic perovskite passivation materials suitable for manufacturing perovskite passivation layers (PPLs) include metal fluorides, such as lithium fluoride, sodium fluoride, calcium fluoride, and magnesium fluoride. Examples of organic perovskite passivation materials suitable for manufacturing perovskite passivation layers (PPLs) include fullerene derivatives and [6,6]-phenyl-C61-butyric acid. Perovskite passivation layers (PPLs) play a crucial role in improving the performance and durability of energy conversion devices. The primary function of perovskite passivation layers (PPLs) is to passivate surface defects in the perovskite layer, thereby reducing nonradiative recombination losses and improving overall photoelectric conversion efficiency. By effectively mitigating these defects, the perovskite passivation layer (PPL) helps maintain the integrity of the perovskite layer and prevents degradation over time. The PPL is essential not only for improving the immediate efficiency of energy conversion devices but also for ensuring their long-term operational stability. The introduction of the PPL significantly contributes to achieving highly efficient and durable energy conversion devices.

[0089] Various suitable methods can be used to deposit perovskite passivation material for fabricating the perovskite passivation layer PPL onto the passivation layer PL. For example, coating methods such as blade coating or slot coating can be used to deposit the perovskite passivation material for fabricating the perovskite passivation layer PPL.

[0090] In some embodiments, the perovskite passivation layer PPL has a thickness in the range of 1 nm to 10 nm, for example, 1 nm to 2 nm, 2 nm to 3 nm, 3 nm to 4 nm, 4 nm to 5 nm, 5 nm to 6 nm, 6 nm to 7 nm, 7 nm to 8 nm, 8 nm to 9 nm, or 9 nm to 10 nm. The inventors of this disclosure have found that if the thickness of the perovskite passivation layer PPL is too small, complete coverage of the perovskite layer PL cannot be guaranteed; if the thickness of the perovskite passivation layer PPL is too large, it increases material usage, leading to higher costs.

[0091] Various suitable electron transport materials can be used to fabricate electron transport layer (ETL) materials. Examples of suitable electron transport materials for fabricating ETL materials include inorganic or organic electron transport materials. Examples of suitable organic electron transport materials for fabricating ETL materials include fullerenes, such as C60 and C70 fullerenes. Examples of suitable inorganic electron transport materials for fabricating ETL materials include zinc oxide and titanium oxide.

[0092] Various suitable methods can be used to deposit the electron transport material for fabricating the electron transport layer (ETL) onto the perovskite passivation layer (PPL). For example, evaporation or coating methods can be used to deposit the electron transport material for fabricating the ETL.

[0093] In some embodiments, the thickness of the electron transport layer (ETL) is in the range of 1 nm to 40 nm, for example, 1 nm to 5 nm, 5 nm to 10 nm, 10 nm to 15 nm, 15 nm to 20 nm, 20 nm to 25 nm, 25 nm to 30 nm, 30 nm to 35 nm, or 35 nm to 40 nm. The inventors of this disclosure have found that if the thickness of the ETL is too small, complete coverage of the perovskite passivation layer (PPL) cannot be guaranteed; if the thickness of the ETL is too large, the amount of material used increases, leading to higher costs.

[0094] Various suitable conductive materials can be used to fabricate electron modifier layers (EMLs). Examples of suitable EMLs include tin oxide. EMLs are crucial components for significantly improving the overall performance of power conversion devices. The primary function of an EML is to improve the interface properties between the electron transport layer (ETL) and subsequent layers, particularly by blocking holes and promoting efficient electron transport. EMLs help reduce the likelihood of charge recombination at the interface, thereby improving photoelectric conversion efficiency. Furthermore, EMLs contribute to the stability of the power conversion device by ensuring a more stable and efficient charge extraction process. The presence of an EML is essential for optimizing electron transport paths, which in turn leads to better efficiency and long-term reliability of the power conversion device.

[0095] Various suitable methods can be used to deposit electronic modification materials for fabricating the electron-modified layer (EML) onto the electron transport layer (ETL). For example, atomic layer deposition can be used to deposit the electronic modification materials for fabricating the EML.

[0096] In some embodiments, the thickness of the electron modification layer (EML) is in the range of 1 nm to 40 nm, for example, 1 nm to 5 nm, 5 nm to 10 nm, 10 nm to 15 nm, 15 nm to 20 nm, 20 nm to 25 nm, 25 nm to 30 nm, 30 nm to 35 nm, or 35 nm to 40 nm. The inventors of this disclosure have found that if the thickness of the EML is too small, complete coverage of the electron transport layer (ETL) cannot be guaranteed; if the thickness of the EML is too large, the amount of material used increases, leading to higher costs.

[0097] Various suitable conductive materials can be used to fabricate the second electrode layer E2. Examples of conductive materials suitable for fabricating the second electrode layer E2 include indium tin oxide, copper, silver, indium tungsten oxide, bismuth, molybdenum, and chromium. In some embodiments, the second electrode layer E2 comprises a stacked structure comprising indium tin oxide, copper, and molybdenum. In a particular example, the stacked structure comprises a first sublayer having indium tin oxide, a second sublayer having copper located on the first sublayer, and a third sublayer having molybdenum located on the side of the second sublayer away from the first sublayer. The inventors of this disclosure have found that the first sublayer comprising indium tin oxide can effectively prevent the diffusion of metallic elements into the light-emitting layer (e.g., the perovskite layer PL); and the third sublayer comprising molybdenum can prevent edge lifting and / or pitting of the second sublayer after laser scribing.

[0098] Various suitable methods can be used to deposit the conductive material for fabricating the second electrode layer E2 onto the electron-modified layer EML. For example, physical vapor deposition, reactive plasma deposition, evaporation methods, or a combination of reactive plasma deposition and physical vapor deposition can be used to deposit the conductive material for fabricating the second electrode layer E2.

[0099] In some embodiments, the thickness of the second electrode layer E2 is no greater than 500 nm, for example, no greater than 450 nm, no greater than 400 nm, no greater than 350 nm, or no greater than 300 nm. The inventors of this disclosure have found that if the thickness of the second electrode layer E2 is too small, the resistance of the second electrode layer E2 increases; if the thickness of the second electrode layer E2 is too large, it increases the amount of material used, leading to higher costs.

[0100] In some embodiments, laser scribing is used during the manufacturing process of the energy conversion device to enhance the output voltage and reduce resistive losses. In some embodiments, a first laser scribing is performed after depositing a conductive material for manufacturing a first electrode layer E1, thereby forming the first electrode layer E1. Optionally, the first laser scribing is performed with a scribing width of 30 μm to 50 μm. In some embodiments, a second laser scribing is performed after depositing an electrode modification material for manufacturing an electrode modification layer EML, thereby forming the electrode modification layer EML, the electron transport layer ETL, the perovskite passivation layer PPL, the perovskite layer PL, the hole passivation layer HPL, and the hole transport layer HTL. Optionally, the second laser scribing is performed with a scribing width of 30 μm to 200 μm. In some embodiments, a third laser scribing is performed after depositing a conductive material for manufacturing a second electrode layer E2, thereby forming the second electrode layer E2. Optionally, the third laser scribing is performed with a scribing width of 30 μm to 200 μm.

[0101] Figure 2 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure. Reference Figure 2In some embodiments, the energy conversion device includes a first substrate BS1; a first electrode layer E1 (e.g., an anode layer) located on the first substrate BS1; a hole transport layer HTL located on the side of the first electrode layer E1 away from the first substrate BS1; a hole passivation layer HPL located on the side of the hole transport layer HTL away from the first substrate BS1; a perovskite layer PL located on the side of the hole passivation layer HPL away from the first substrate BS1; a perovskite passivation layer PPL located on the side of the perovskite layer PL away from the first substrate BS1; an electron transport layer ETL located on the side of the perovskite passivation layer PPL away from the first substrate BS1; an electron modification layer EML located on the side of the electron transport layer ETL away from the first substrate BS1; a second electrode layer E2 (e.g., a cathode layer) located on the side of the electron modification layer EML away from the first substrate BS1; and a second substrate BS2 located on the side of the second electrode layer E2 away from the first substrate BS1.

[0102] In some embodiments, the first electrode layer E1 includes a first portion P1 and a second portion P2 spaced apart from each other. In some embodiments, the first portion P1 is electrically connected to the second electrode layer E2, and the second portion P2 is electrically connected to the second electrode layer E2. In some embodiments, the first portion P1 is in contact with the hole transport layer HTL, and the second portion P2 is in contact with the hole transport layer HTL.

[0103] In some embodiments, the energy conversion device includes a plurality of energy conversion units UN and one or more gaps GP that space the plurality of energy conversion units UN apart. Figure 3 This is a schematic diagram illustrating the structure of a corresponding energy conversion unit in an energy conversion apparatus according to some embodiments of the present disclosure. (Reference) Figure 3In some embodiments, each energy conversion unit in the plurality of energy conversion units UN includes a first portion P1 and a second portion P2 of a first electrode layer E1; a hole transport block HTLB of a hole transport layer HTL, located on the first portion P1 and the second portion P2; a hole passivation block HPLB of a hole passivation layer HPL, located on the side of the hole transport block HTLB away from the first portion P1 and the second portion P2; and a perovskite block PLB of a perovskite layer PL, located on the side of the hole passivation block HPLB away from the hole transport block HTLB; calcium The perovskite passivation layer PPL has a perovskite passivation block PPLB located on the side of the perovskite passivation block PLB away from the hole passivation block HPLB; the electron transport layer ETL has an electron transport block ETLB located on the side of the perovskite passivation block PPLB away from the perovskite block PLB; the electron modification layer EML has an electron modification block EMLB located on the side of the electron transport block ETLB away from the perovskite passivation block PPLB; and the second electrode block E2B of the second electrode layer E2 is located on the side of the electron modification block EMLB away from the electron transport block ETLB. In some embodiments, the second electrode block E2B extends through a corresponding groove in one or more grooves GV to connect to the second portion P2, the groove extending through the electron modification block EMLB, the electron transport block ETLB, the perovskite passivation block PPLB, the perovskite block PLB, the hole passivation block HPLB, and the hole transport block HTLB.

[0104] refer to Figure 2 In some embodiments, the energy conversion device further includes a first lead LL1 connected to the first portion P1 and a second lead LL2 connected to the second portion P2. Optionally, the first lead LL1 is located on the side of the first portion P1 away from the first substrate BS1, and the second lead LL2 is located on the side of the second portion P2 away from the first substrate BS1. In one example, the first lead LL1 and the second lead LL2 comprise a conductive adhesive material, such as conductive tape.

[0105] In some embodiments, the energy conversion device further includes an encapsulation layer EN located on the side of the second electrode layer E2 away from the first substrate BS1, which encapsulates a plurality of energy conversion units UN. Optionally, the encapsulation layer EN extends into one or more gaps GP. In one example, the encapsulation layer EN comprises a polyolefin elastomer.

[0106] In some embodiments, the energy conversion device further includes a barrier layer BL located on a first substrate BS1, configured to accommodate an encapsulation layer EN and a plurality of energy conversion units UN. In one example, the barrier layer comprises butyl rubber.

[0107] In some embodiments, the energy conversion device further includes a second substrate BS2 located on the side of the encapsulation layer EN and the barrier layer BL away from the first substrate BS1.

[0108] On the other hand, this disclosure provides a method for forming an energy conversion device. Figure 4 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 4 In some embodiments, the method includes forming a first electrode layer on a first substrate, forming a hole transport layer on a side of the first electrode layer away from the first substrate, forming a hole passivation layer on a side of the hole transport layer away from the first substrate, forming a perovskite layer on a side of the hole passivation layer away from the first substrate, forming a perovskite passivation layer on a side of the perovskite layer away from the first substrate, forming an electron transport layer on a side of the perovskite passivation layer away from the first substrate, forming an electron modification layer on a side of the electron transport layer away from the first substrate, forming a second electrode layer on a side of the electron modification layer away from the first substrate, and forming a second substrate on a side of the second electrode layer away from the first substrate.

[0109] In some embodiments, the method further includes forming a plurality of energy conversion units and forming one or more gaps that space the plurality of energy conversion units apart. Figure 5 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 5 In some embodiments, forming the first electrode layer includes forming a first electrode material layer on a first substrate; and performing a first laser scribing on the first electrode material layer to form a first portion and a second portion spaced apart from each other.

[0110] Figure 6 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 6 In some embodiments, the method further includes forming a hole transport material layer on the first portion and the second portion, forming a hole passivation material layer on the side of the hole transport material layer away from the first portion and the second portion, forming a perovskite material layer on the side of the hole passivation material layer away from the hole transport material layer, forming a perovskite passivation material layer on the side of the perovskite material layer away from the hole passivation material layer, forming an electron transport material layer on the side of the perovskite passivation material layer away from the perovskite material layer, forming an electron modification material layer on the side of the electron transport material layer away from the perovskite passivation material layer, and performing a second laser scribing on the electrode modification material layer, the electron transport material layer, the perovskite passivation material layer, the perovskite material layer, the hole passivation material layer and the hole transport material layer to form one or more grooves exposing the surface of the second portion.

[0111] Figure 7 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 7In some embodiments, the method further includes forming a second electrode material layer on the side of the electrode modification material layer away from the first substrate, the second electrode material layer extending through a corresponding groove in one or more grooves to connect to the second portion; and performing a third laser scribing on the second electrode material layer to form one or more gaps, an electrode modification layer, an electron transport layer, a perovskite passivation layer, a perovskite layer, a hole passivation layer, and a hole transport layer. Optionally, one or more gaps space the plurality of energy conversion units apart. Each of the multiple energy conversion units includes a first portion and a second portion of a first electrode layer; a hole transport block of a hole transport layer located on the first and second portions; a hole passivation block of a hole passivation layer located on the side of the hole transport block away from the first and second portions; a perovskite block of a perovskite layer located on the side of the hole passivation block away from the hole transport block; a perovskite passivation block of a perovskite passivation layer located on the side of the perovskite block away from the hole passivation block; an electron transport block of an electron transport layer located on the side of the perovskite passivation block away from the perovskite block; an electron modification block of an electron modification layer located on the side of the electron transport block away from the perovskite passivation block; and a second electrode block of a second electrode layer located on the side of the electron modification block away from the electron transport block.

[0112] To illustrate the process of forming an energy conversion device according to this disclosure, certain exemplary embodiments are provided below. Various alternative implementations may be practiced in this disclosure.

[0113] In one example, a 150 nm thick indium tin oxide (ITO) layer was formed on a substrate using physical vapor deposition (PVD). Subsequently, a first laser scribing with a 50 μm scribing width was performed to form a first electrode layer. On the first electrode layer, a 20 nm thick hole transport layer was fabricated using PVD with nickel oxide as the hole transport material. On the hole transport layer, a 0.3 nm thick alumina hole passivation layer was fabricated using atomic layer deposition (ALD) to create an effective tunneling effect. On the hole passivation layer, an organic-inorganic perovskite solution was coated. Subsequently, vacuum concentration drying and high-temperature annealing (not exceeding 150 °C) were applied to form a large-particle α-phase perovskite with a controlled thickness of 500 nm. This ensured sufficient absorption of visible light while avoiding internal recombination and the increase of defects. On the perovskite layer, a 1.6 nm thick lithium fluoride perovskite passivation layer was fabricated using evaporation. This layer was designed to passivate defects in the perovskite layer and improve photoelectric conversion efficiency. A 25 nm thick C60 fullerene electron transport layer was fabricated on the perovskite passivation layer using an evaporation method. This ensured efficient electron transport while controlling costs. On the electron transport layer, a 20 nm thick tin oxide (IV) electron modification layer was fabricated using atomic layer deposition (ALD) to serve as a hole blocking layer. A second laser scribing was then performed with a scribing width of 50 μm. On the electron modification layer, indium tin oxide (ITO) and copper cathode layers were fabricated using a combination of reactive plasma deposition (RPD) and physical vapor deposition (PVD). The ITO layer was 40 nm thick, and the copper layer was 50 nm thick. A third laser scribing was then performed with a scribing width of 50 μm. Laser edge cleaning was then performed, followed by the application of conductive tape to the cathode and anode, extending them outwards. Butyl adhesive was applied around the edges of the glass. A POE film (a copolymer of ethylene and high-carbon α-olefins) was then applied to all layers and the conductive tape. Finally, a cover glass was placed on top to complete the lamination process. The laminated cells are laminated and heated (at a temperature below 150°C) to melt the POE film. After cooling and solidification, an energy conversion device is formed.

[0114] In another example, a glass substrate coated with fluorine-doped tin oxide, with a thickness of 500 nm, was used. The fluorine-doped tin oxide was first laser-scribed with a scribing width of 35 μm to form a first electrode layer. On the first electrode layer, a 20 nm thick nickel oxide hole transport layer was fabricated using physical vapor deposition. On the hole transport layer, a 0.3 nm thick aluminum oxide hole passivation layer was fabricated using atomic layer deposition to create an effective tunneling effect. On the hole passivation layer, an organic-inorganic perovskite solution was coated. Subsequently, vacuum concentration drying and high-temperature annealing (not exceeding 150 °C) were applied to form a large-particle α-phase perovskite with a controlled thickness of 500 nm. This ensured sufficient absorption of visible light while avoiding internal recombination and the increase of defects. On the perovskite layer, a 1.5 nm thick lithium fluoride perovskite passivation layer was fabricated using evaporation. This passivation layer was designed to reduce defects in the perovskite layer and improve photoelectric conversion efficiency. A 20 nm thick C60 fullerene electron transport layer was fabricated on the perovskite passivation layer using an evaporation method. This ensured efficient electron transport while controlling costs. On the electron transport layer, a 20 nm thick tin oxide (IV) electron modification layer was fabricated using atomic layer deposition (ALD) to serve as a hole blocking layer. A second laser scribing was then performed with a scribing width of 50 μm. On the electron modification layer, indium tin oxide (ITO) and copper cathode layers were fabricated using a combination of reactive plasma deposition (RPD) and physical vapor deposition (PVD). The ITO layer was 40 nm thick, and the copper layer was 35 nm thick. A third laser scribing was then performed with a scribing width of 50 μm. Laser edge cleaning was then performed. Conductive tape was then attached to the cathode and anode, extending outwards. Butyl adhesive was applied around the edges of the glass. A POE film (a copolymer of ethylene and high-carbon α-olefins) was then applied to all layers and the conductive tape. Finally, a cover glass was placed on top to complete the lamination process. The laminated cells are laminated and heated (at a temperature below 150°C) to melt the POE film. After cooling and solidification, an energy conversion device is formed.

[0115] Figure 8 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure. Reference Figure 8 In some embodiments, the energy conversion device includes a first substrate BS1; a first electrode layer E1 (e.g., an anode layer) located on the first substrate BS1; a hole transport layer HTL located on the side of the first electrode layer E1 away from the first substrate BS1; a perovskite layer PL located on the side of the hole transport layer HTL away from the first substrate BS1; an electron transport layer ETL located on the side of the perovskite layer PL away from the first substrate BS1; and a second electrode layer E2 (e.g., a cathode layer) located on the side of the electron transport layer ETL away from the first substrate BS1.

[0116] In some embodiments, the first electrode layer E1 includes a first portion P1 and a second portion P2 spaced apart from each other. In some embodiments, the first portion P1 is electrically isolated from the second electrode layer E2, and the second portion P2 is electrically connected to the second electrode layer E2. In some embodiments, the first portion P1 is in contact with the hole transport layer HTL, and the second portion P2 is in contact with the hole transport layer HTL.

[0117] In some embodiments, the energy conversion device includes a plurality of energy conversion units UN and one or more gaps GP that space the plurality of energy conversion units UN apart. Each gap in the one or more gaps GP extends through the second electrode layer E2, the electron transport layer ETL, the perovskite layer PL, and the hole transport layer HTL, thereby exposing a portion of the first electrode layer E1.

[0118] Figure 9 This illustration shows one or more gaps and one or more recesses in an energy conversion device according to some embodiments of the present disclosure. In some embodiments, the energy conversion device includes one or more recesses GV. Each recess in the one or more recesses GV extends through the electron transport layer ETL, the perovskite layer PL, and the hole transport layer HTL, thereby exposing a portion of the second portion P2. Reference Figure 8 and Figure 9 Each of the one or more grooves GV is configured to receive a portion of the second electrode layer E2. This portion of the second electrode layer E2 extends into the corresponding groove to connect to the second portion P2.

[0119] In some embodiments, the sidewalls of each gap have a tilt angle α in the range of 45 to 90 degrees, for example, 45 to 50 degrees, 55 to 60 degrees, 65 to 70 degrees, 75 to 80 degrees, or 85 to 90 degrees. The inventors of this disclosure have discovered that by having a tilt angle α within this range, collapse of the second electrode layer E2 and short circuit formation with the first electrode layer E1 can be prevented during subsequent packaging and lamination processes, thereby ensuring the performance of the power conversion device.

[0120] In some embodiments, portions of the first electrode layer E1 exposed through the corresponding gaps have an average width in the range of 30 μm to 100 μm, for example, 30 μm to 40 μm, 40 μm to 50 μm, 50 μm to 60 μm, 60 μm to 70 μm, 70 μm to 80 μm, 80 μm to 90 μm, or 90 μm to 100 μm.

[0121] In some embodiments, the sidewalls of each groove have a tilt angle β in the range of 45 to 90 degrees, for example, 45 to 50 degrees, 55 to 60 degrees, 65 to 70 degrees, 75 to 80 degrees, or 85 to 90 degrees. The inventors of this disclosure have found that by having a tilt angle β within this range, the resistance of the connection formed between the second electrode layer E2 and the second portion P2 can be reduced.

[0122] In some embodiments, the portion of the first electrode layer E1 exposed by the corresponding groove has an average width in the range of 30 μm to 100 μm, for example, 30 μm to 40 μm, 40 μm to 50 μm, 50 μm to 60 μm, 60 μm to 70 μm, 70 μm to 80 μm, 80 μm to 90 μm, or 90 μm to 100 μm.

[0123] Figure 10 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 10 In some embodiments, the method includes forming a first electrode layer on a first substrate; forming a hole transport layer on the side of the first electrode layer away from the first substrate; forming a perovskite layer on the side of the hole passivation layer away from the first substrate; forming an electron transport layer on the side of the perovskite passivation layer away from the first substrate; and forming a second electrode layer on the side of the electron transport layer away from the first substrate.

[0124] Figure 11 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 11 In some embodiments, the method includes forming a first electrode material layer on a first substrate; and performing a first laser scribing on the first electrode material layer to form a first portion and a second portion spaced apart from each other.

[0125] Figure 12 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 12 In some embodiments, the method includes forming a hole transport material layer on a first portion and a second portion; forming a perovskite material layer on a side of the hole passivation material layer away from the hole transport material layer; forming an electron transport material layer on a side of the perovskite passivation material layer away from the perovskite layer; and performing a second laser scribing on the electron transport material layer, the perovskite material layer and the hole transport material layer to form one or more grooves exposing the surface of the first electrode layer.

[0126] Figure 13 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 13In some embodiments, the method includes forming a second electrode material layer on the side of the hole transport material layer away from the first substrate, the second electrode material layer extending through a corresponding groove in one or more grooves to connect to the second portion; and performing a third laser scribing on the second electrode material layer to form one or more gaps, an electron transport layer, a perovskite layer, and a hole transport layer.

[0127] To illustrate the process of forming an energy conversion device according to this disclosure, certain exemplary embodiments are provided below. Various alternative implementations may be practiced in this disclosure.

[0128] In one example, a glass substrate coated with fluorine-doped tin oxide was used. The fluorine-doped tin oxide was first laser-scribed with a scribe width ranging from 30 μm to 100 μm to form a first electrode layer comprising multiple electrode blocks (including a first portion and a second portion) containing multiple energy conversion units. The width of each energy conversion unit was in the range of 3 mm to 7 mm. A hole transport layer, a perovskite layer, and an electron transport layer were sequentially formed on the first electrode layer. Subsequently, a second laser scribe was performed with a scribe width ranging from 30 μm to 100 μm. The distance between the second laser scribe and the first laser scribe was in the range of 10 μm to 50 μm. The first electrode layer was retained in the second scribe region, while the layer above the first electrode layer was laser-etched away. The etching tilt angle of the layer above the first electrode layer was in the range of 45 degrees to 90 degrees. A cathode layer was deposited on the electron transport layer using a process such as sputtering or reactive plasma deposition. The cathode layer can be made of a conductive material, such as indium tin oxide, indium zinc oxide, indium tungsten oxide, copper, silver, or other suitable metal oxides or metals. Subsequently, a third laser scribing is performed with a scribing width ranging from 30 μm to 100 μm. The distance between the third and second laser scribings is in the range of 10 μm to 50 μm. The first electrode layer in the third scribing region is retained, while the layer above the first electrode layer is laser-etched away. The etching tilt angle of the layer above the first electrode layer is in the range of 45 degrees to 90 degrees. Subsequently, laser edge cleaning is performed with a cleaning width ranging from 5 mm to 20 mm. Following this, the process of applying the busbar, encapsulating with PIB (polyisobutylene) and POE (polyolefin elastomer) films, and subsequent junction box assembly is carried out.

[0129] Figure 14 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure. Reference Figure 14In some embodiments, the energy conversion device includes a first substrate BS1; a first electrode layer E1 (e.g., an anode layer) located on the first substrate BS1; a hole transport layer HTL located on the side of the first electrode layer E1 away from the first substrate BS1; a perovskite layer PL located on the side of the hole transport layer HTL away from the first substrate BS1; an electron transport layer ETL located on the side of the perovskite layer PL away from the first substrate BS1; a second electrode layer E2 (e.g., a cathode layer) located on the side of the electron transport layer ETL away from the first substrate BS1; and an auxiliary electrode layer AEL located on the side of the second electrode layer E2 away from the first substrate BS1.

[0130] In some embodiments, the first electrode layer E1 includes a first portion P1 and a second portion P2 spaced apart from each other. In some embodiments, the first portion P1 is electrically isolated from the second electrode layer E2, and the second portion P2 is electrically connected to the second electrode layer E2. In some embodiments, the first portion P1 is in contact with the hole transport layer HTL, and the second portion P2 is in contact with the hole transport layer HTL.

[0131] In some embodiments, the energy conversion device includes a plurality of energy conversion units UN and one or more gaps GP that space the plurality of energy conversion units UN apart. Each gap in the one or more gaps GP extends through the second electrode layer E2, the electron transport layer ETL, the perovskite layer PL, and the hole transport layer HTL, thereby exposing a portion of the first electrode layer E1.

[0132] Figure 15 One or more recesses in an energy conversion device according to some embodiments of the present disclosure are shown. In some embodiments, the energy conversion device includes one or more recesses GV. Each recess in the one or more recesses GV extends through the electron transport layer ETL, the perovskite layer PL, and the hole transport layer HTL, thereby exposing a portion of the second portion P2. Reference Figure 14 and Figure 15 Each of the one or more grooves GV is configured to receive a portion of the second electrode layer E2. This portion of the second electrode layer E2 extends into the corresponding groove to connect to the second portion P2.

[0133] Figure 16 This illustration shows one or more gaps and one or more second grooves in an energy conversion device according to some embodiments of the present disclosure. In some embodiments, the energy conversion device includes one or more second grooves GV2. Each of the one or more second grooves GV2 is located on the side of the second electrode layer E2 in the respective groove away from the first electrode layer E1.

[0134] In some embodiments, the auxiliary electrode layer AEL includes one or more auxiliary electrode blocks AEB. Each second groove in one or more second grooves GV2 is configured to receive a corresponding electrode block from the one or more auxiliary electrode blocks AEB. Each electrode block in the one or more auxiliary electrode blocks AEB contacts that portion of the second electrode layer E2 in the corresponding groove. The inventors of this disclosure have found that by providing the auxiliary electrode layer AEL, the efficiency of the energy conversion device can be improved. Various suitable conductive materials can be used to manufacture the auxiliary electrode layer AEL. Examples of conductive materials suitable for manufacturing the auxiliary electrode layer AEL include indium tin oxide, copper, silver, indium tungsten oxide, bismuth, molybdenum, and chromium. In one particular example, the auxiliary electrode layer AEL is made of silver. In another example, the auxiliary electrode layer AEL is manufactured using a screen printing process.

[0135] Figure 17 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 17 In some embodiments, the method includes forming a first electrode layer on a first substrate; forming a hole transport layer on the side of the first electrode layer away from the first substrate; forming a perovskite layer on the side of the hole passivation layer away from the first substrate; forming an electron transport layer on the side of the perovskite passivation layer away from the first substrate; forming a second electrode layer on the side of the electron transport layer away from the first substrate; and forming an auxiliary electrode layer on the side of the second electrode layer away from the first substrate.

[0136] Figure 18 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 18 In some embodiments, the method includes forming a first electrode material layer on a first substrate; and performing a first laser scribing on the first electrode material layer to form a first portion and a second portion spaced apart from each other.

[0137] Figure 19 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 19 In some embodiments, the method includes forming a hole transport material layer on a first portion and a second portion; forming a perovskite material layer on a side of the hole passivation material layer away from the hole transport material layer; forming an electron transport material layer on a side of the perovskite passivation material layer away from the perovskite layer; and performing a second laser scribing on the electron transport material layer, the perovskite material layer and the hole transport material layer to form one or more grooves exposing the surface of the first electrode layer.

[0138] Figure 20 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 20In some embodiments, the method includes forming a second electrode material layer on the side of the hole transport material layer away from the first substrate, the second electrode material layer extending through a corresponding groove in one or more grooves to connect to the second portion; and performing a third laser scribing on the second electrode material layer to form one or more gaps, an electron transport layer, a perovskite layer, and a hole transport layer.

[0139] To illustrate the process of forming an energy conversion device according to this disclosure, certain exemplary embodiments are provided below. Various alternative implementations may be practiced in this disclosure.

[0140] In one example, a glass substrate coated with fluorine-doped tin oxide was used. The fluorine-doped tin oxide was first laser-scribed with a scribe width ranging from 30 μm to 100 μm to form a first electrode layer comprising multiple electrode blocks (including a first portion and a second portion) containing multiple energy conversion units. The width of each energy conversion unit in the plurality of energy conversion units ranged from 3 mm to 7 mm. A hole transport layer, a perovskite layer, and an electron transport layer were sequentially formed on the first electrode layer. Subsequently, a second laser scribe was performed with a scribe width ranging from 30 μm to 100 μm. The distance between the second laser scribe and the first laser scribe was ranging from 10 μm to 50 μm. The first electrode layer in the second scribe region was retained, while the layer above the first electrode layer was laser-etched away. A cathode layer was deposited on the electron transport layer using a process such as sputtering or reactive plasma deposition. The cathode layer could be made of a conductive material, such as indium tin oxide, indium zinc oxide, indium tungsten oxide, copper, silver, or other suitable metal oxides or metallic materials. A cathode layer is formed such that one or more second grooves are located on the side of the cathode layer away from the first electrode layer. A third laser scribing is then performed with a scribing width ranging from 30 μm to 100 μm. The distance between the third laser scribing and the second laser scribing is in the range of 10 μm to 50 μm. The first electrode layer is retained in the third scribing region, while the layer above the first electrode layer is laser-etched away. An auxiliary electrode layer is then formed on the second electrode layer using processes such as screen printing and dispenser coating. The auxiliary electrode layer is formed to include one or more auxiliary electrode blocks. Each of the one or more second grooves is configured to receive a corresponding electrode block from the one or more auxiliary electrode blocks. Each electrode block from the one or more auxiliary electrode blocks contacts that portion of the second electrode layer in the corresponding groove. Laser edge cleaning is then performed with a cleaning width ranging from 5 mm to 20 mm. Subsequently, processes including busbar application, encapsulation with PIB (polyisobutylene) and POE (polyolefin elastomer) films, and subsequent junction box assembly are performed.

[0141] Figure 21 This is a schematic diagram illustrating the structure of an energy conversion device according to some embodiments of the present disclosure. Reference Figure 21 In some embodiments, the energy conversion device includes a first substrate BS1; a first electrode layer E1 (e.g., an anode layer) located on the first substrate BS1; a hole transport layer HTL located on the side of the first electrode layer E1 away from the first substrate BS1; a perovskite layer PL located on the side of the hole transport layer HTL away from the first substrate BS1; an electron transport layer ETL located on the side of the perovskite layer PL away from the first substrate BS1; a second electrode layer E2 (e.g., a cathode layer) located on the side of the electron transport layer ETL away from the first substrate BS1; a planarization layer PLN located on the side of the second electrode layer E2 away from the first substrate BS1; and an encapsulation layer EN located on the side of the planarization layer PLN away from the first substrate BS1.

[0142] In some embodiments, the first electrode layer E1 includes a first portion P1 and a second portion P2 spaced apart from each other. In some embodiments, the first portion P1 is electrically isolated from the second electrode layer E2, and the second portion P2 is electrically connected to the second electrode layer E2. In some embodiments, the first portion P1 is in contact with the hole transport layer HTL, and the second portion P2 is in contact with the hole transport layer HTL.

[0143] Figure 22 One or more recesses are shown in an energy conversion device according to some embodiments of the present disclosure. Figure 23 This illustration shows one or more gaps and one or more second grooves in an energy conversion device according to some embodiments of the present disclosure. (Refer to...) Figures 21 to 23 In some embodiments, the energy conversion device includes one or more recesses GV. In some embodiments, the energy conversion device includes a plurality of energy conversion units UN and one or more gaps GP that space the plurality of energy conversion units UN apart. Each gap in the one or more gaps GP extends through the second electrode layer E2, the electron transport layer ETL, the perovskite layer PL, and the hole transport layer HTL, thereby exposing a portion of the first electrode layer E1.

[0144] Each of the one or more grooves in the groove GV extends through the electron transport layer ETL, the perovskite layer PL, and the hole transport layer HTL, thereby exposing a portion of the second portion P2. In some embodiments, each groove in the one or more grooves GV is configured to accommodate a portion of the second electrode layer E2. This portion of the second electrode layer E2 extends into the corresponding groove to connect to the second portion P2.

[0145] In some embodiments, the energy conversion device includes one or more second grooves GV2. Each of the one or more second grooves GV2 is located on the side of the second electrode layer E2 in the respective groove that is away from the first electrode layer E1.

[0146] In some embodiments, the planarization layer PLN includes one or more first planarization blocks PLB1 and one or more second planarization blocks PLB2. Each gap in one or more gaps GP is configured to receive a corresponding first planarization block in one or more first planarization blocks PLB1. Each second groove in one or more second grooves GV2 is configured to receive a corresponding second planarization block in one or more second planarization blocks PLB2. The inventors of this disclosure have discovered that by providing the planarization layer PLN, layer delamination caused by the formation of the encapsulation layer can be prevented, thereby improving the performance of the power conversion device.

[0147] Figure 24 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 24 In some embodiments, the method includes forming a first electrode layer on a first substrate; forming a hole transport layer on the side of the first electrode layer away from the first substrate; forming a perovskite layer on the side of the hole passivation layer away from the first substrate; forming an electron transport layer on the side of the perovskite passivation layer away from the first substrate; forming a second electrode layer on the side of the electron transport layer away from the first substrate; forming a planarization layer on the side of the second electrode layer away from the first substrate; and forming an encapsulation layer on the side of the planarization layer away from the first substrate.

[0148] Figure 25 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 25 In some embodiments, the method includes forming a first electrode material layer on a first substrate; and performing a first laser scribing on the first electrode material layer to form a first portion and a second portion spaced apart from each other.

[0149] Figure 26 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 26 In some embodiments, the method includes forming a hole transport material layer on a first portion and a second portion; forming a perovskite material layer on a side of the hole passivation material layer away from the hole transport material layer; forming an electron transport material layer on a side of the perovskite passivation material layer away from the perovskite layer; and performing a second laser scribing on the electron transport material layer, the perovskite material layer and the hole transport material layer to form one or more grooves exposing the surface of the first electrode layer.

[0150] Figure 27 This is a flowchart illustrating the process of manufacturing an energy conversion device according to some embodiments of the present disclosure. (See also:) Figure 27In some embodiments, the method includes forming a second electrode material layer on the side of the hole transport material layer away from the first substrate, the second electrode material layer extending through a corresponding groove in one or more grooves to connect to the second portion; and performing a third laser scribing on the second electrode material layer to form one or more gaps, an electron transport layer, a perovskite layer, and a hole transport layer.

[0151] To illustrate the process of forming an energy conversion device according to this disclosure, certain exemplary embodiments are provided below. Various alternative implementations may be practiced in this disclosure.

[0152] In one example, a glass substrate coated with fluorine-doped tin oxide was used. The fluorine-doped tin oxide was first laser-scribed with a scribe width ranging from 30 μm to 100 μm to form a first electrode layer comprising multiple electrode blocks (including a first portion and a second portion) containing multiple energy conversion units. The width of each energy conversion unit in the plurality of energy conversion units ranged from 3 mm to 7 mm. A hole transport layer, a perovskite layer, and an electron transport layer were sequentially formed on the first electrode layer. Subsequently, a second laser scribe was performed with a scribe width ranging from 30 μm to 100 μm. The distance between the second laser scribe and the first laser scribe was ranging from 10 μm to 50 μm. The first electrode layer in the second scribe region was retained, while the layer above the first electrode layer was laser-etched away. A cathode layer was deposited on the electron transport layer using a process such as sputtering or reactive plasma deposition. The cathode layer could be made of a conductive material, such as indium tin oxide, indium zinc oxide, indium tungsten oxide, copper, silver, or other suitable metal oxides or metallic materials. A cathode layer is formed such that one or more second grooves are located on the side of the cathode layer away from the first electrode layer. A third laser scribing is then performed with a scribing width ranging from 30 μm to 100 μm. The distance between the third laser scribing and the second laser scribing is in the range of 10 μm to 50 μm. The first electrode layer is retained in the third scribing region, while the layer above the first electrode layer is laser-etched away. A planarization layer is then formed on the second electrode layer using processes such as screen printing and dispenser coating. A resin material such as epoxy or acrylic can be used to form the planarization layer. The resin material is then cured using methods such as thermosetting or UV irradiation. An auxiliary electrode layer is formed comprising one or more auxiliary electrode blocks. Each of the one or more second grooves is configured to receive a corresponding electrode block from the one or more auxiliary electrode blocks. Each electrode block from the one or more auxiliary electrode blocks contacts that portion of the second electrode layer in the corresponding groove. Laser edge cleaning is then performed with a cleaning width ranging from 5 mm to 20 mm. Subsequently, the process of applying the busbar, encapsulating it with PIB (polyisobutylene) and POE (polyolefin elastomer) films, and then assembling the junction box is carried out.

[0153] Figure 28 This is a plan view of an energy conversion device according to some embodiments of the present disclosure. Figure 29 It is along Figure 28 A cross-sectional view of the energy conversion device along line A-A'. (Reference) Figure 28 and Figure 29 In some embodiments, the energy conversion device further includes a first lead LL1 connected to the first portion P1 and a second lead LL2 connected to the second portion P2. The first lead LL1 is connected to the first terminal TM1 of the energy conversion device, and the second lead LL2 is connected to the second terminal TM2 of the energy conversion device.

[0154] In some embodiments, the orthographic projection of the barrier layer BL onto the first substrate BS1 is a ring. In some embodiments, the orthographic projection of the first lead LL1 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring, and the orthographic projection of the second lead LL2 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 is at least partially outside the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 is at least partially outside the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 at least partially overlaps with the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 at least partially overlaps with the ring.

[0155] In some embodiments, the first lead LL1 includes a first conductive adhesive material (e.g., a first conductive tape), and the second lead LL2 includes a second conductive adhesive material (e.g., a second conductive tape).

[0156] In some embodiments, the first terminal TM1 includes a first conductive adhesive material (e.g., a first conductive tape), and the second terminal TM2 includes a second conductive adhesive material (e.g., a second conductive tape).

[0157] Figure 30 This is a plan view of an energy conversion device according to some embodiments of the present disclosure. Figure 31 It is along Figure 30 A cross-sectional view of the energy conversion device along the B-B' line. Figure 32 It is along Figure 30 A cross-sectional view of the energy conversion device along the C-C' line. (Reference) Figures 30 to 32In some embodiments, the energy conversion device further includes a first lead LL1 connected to the first portion P1 and a second lead LL2 connected to the second portion P2. The first lead LL1 is connected to a first terminal TM1 of the energy conversion device, and the second lead LL2 is connected to a second terminal TM2 of the energy conversion device.

[0158] In some embodiments, the orthographic projection of the barrier layer BL onto the first substrate BS1 is a ring. In some embodiments, the orthographic projection of the first lead LL1 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring, and the orthographic projection of the second lead LL2 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 is at least partially outside the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 is at least partially outside the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 at least partially overlaps with the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 at least partially overlaps with the ring.

[0159] In some embodiments, the first lead LL1 and the first portion P1 are located on the same layer. Optionally, the first lead LL1 and the first portion P1 are part of an overall structure. In one example, the first lead LL1 and the first portion P1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second lead LL2 and the second portion P2 are located on the same layer. Optionally, the second lead LL2 and the second portion P2 are part of an overall structure. In one example, the second lead LL2 and the second portion P2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide.

[0160] In some embodiments, the first terminal TM1 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the first lead LL1 of the first terminal TM1 are located in the same layer. Optionally, the first sublayer SUB1 and the first lead LL1 of the first terminal TM1 are part of an integral structure. In one example, the first sublayer SUB1 and the first lead LL1 of the first terminal TM1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the first terminal TM1 includes a conductive adhesive material (e.g., conductive tape).

[0161] In some embodiments, the second terminal TM2 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the second lead LL2 of the second terminal TM2 are located in the same layer. Optionally, the first sublayer SUB1 and the second lead LL2 of the second terminal TM2 are part of an integral structure. In one example, the first sublayer SUB1 and the second lead LL2 of the second terminal TM2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the second terminal TM2 includes a conductive adhesive material (e.g., conductive tape).

[0162] The inventors of this disclosure have discovered that the energy conversion device according to this disclosure helps to reduce the resistance of the leads and reduce the thickness of the device.

[0163] Figure 33 This is a plan view of an energy conversion device according to some embodiments of the present disclosure. Figure 34 It is along Figure 33 A cross-sectional view of the energy conversion device along the D-D' line. Figure 35 It is along Figure 33 A cross-sectional view of the energy conversion device along the E-E' line. (Reference) Figures 33 to 35 In some embodiments, the energy conversion device further includes a first lead LL1 connected to the first portion P1 and a second lead LL2 connected to the second portion P2. The first lead LL1 is connected to a first terminal TM1 of the energy conversion device, and the second lead LL2 is connected to a second terminal TM2 of the energy conversion device.

[0164] In some embodiments, the orthographic projection of the barrier layer BL onto the first substrate BS1 is a ring. In some embodiments, the orthographic projection of the first lead LL1 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring, and the orthographic projection of the second lead LL2 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 is at least partially outside the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 is at least partially outside the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 at least partially overlaps with the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 at least partially overlaps with the ring.

[0165] In some embodiments, the first lead LL1 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the first portion P1 of the first lead LL1 are located in the same layer. Optionally, the first sublayer SUB1 and the first portion P1 of the first lead LL1 are part of an overall structure. In one example, the first sublayer SUB1 and the first portion P1 of the first lead LL1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the first lead LL1 includes a conductive material different from the conductive material of the first sublayer SUB1 of the first lead LL1. Optionally, the second sublayer SUB2 of the first lead LL1 includes a metallic material.

[0166] In some embodiments, the second lead LL2 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the second portion P2 of the second lead LL2 are located in the same layer. Optionally, the first sublayer SUB1 and the second portion P2 of the second lead LL2 are part of an integral structure. In one example, the first sublayer SUB1 and the second portion P2 of the second lead LL2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the conductive material included in the second sublayer SUB2 of the second lead LL2 is different from the conductive material of the first sublayer SUB1 of the second lead LL2. Optionally, the second sublayer SUB2 of the second lead LL2 includes a metallic material.

[0167] In some embodiments, the first terminal TM1 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 of the first terminal TM1 and the first sublayer SUB1 of the first lead LL1 are located in the same layer. Optionally, the first sublayer SUB1 of the first terminal TM1 and the first sublayer SUB1 of the first lead LL1 are part of an overall structure. In one example, the first sublayer SUB1 of the first terminal TM1 and the first sublayer SUB1 of the first lead LL1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the first terminal TM1 and the second sublayer SUB2 of the first lead LL1 are located in the same layer. Optionally, the second sublayer SUB2 of the first terminal TM1 and the second sublayer SUB2 of the first lead LL1 are part of an overall structure. In one example, the second sublayer SUB2 of the first terminal TM1 and the second sublayer SUB2 of the first lead LL1 are made of the same conductive material, such as a metallic material.

[0168] In some embodiments, the first terminal TM1 further includes a third sublayer SUB3. In some embodiments, the third sublayer SUB3 of the first terminal TM1 includes a conductive adhesive material (e.g., conductive tape).

[0169] In some embodiments, the second terminal TM2 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 of the second terminal TM2 and the first sublayer SUB1 of the second lead LL2 are located in the same layer. Optionally, the first sublayer SUB1 of the second terminal TM2 and the first sublayer SUB1 of the second lead LL2 are part of an overall structure. In one example, the first sublayer SUB1 of the second terminal TM2 and the first sublayer SUB1 of the second lead LL2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the second terminal TM2 and the second sublayer SUB2 of the second lead LL2 are located in the same layer. Optionally, the second sublayer SUB2 of the second terminal TM2 and the second sublayer SUB2 of the second lead LL2 are part of an overall structure. In one example, the second sublayer SUB2 of the second terminal TM2 and the second sublayer SUB2 of the second lead LL2 are made of the same conductive material, such as a metallic material.

[0170] In some embodiments, the second terminal TM2 further includes a third sublayer SUB3. In some embodiments, the third sublayer SUB3 of the second terminal TM2 includes a conductive adhesive material (e.g., conductive tape).

[0171] The inventors of this disclosure have discovered that the energy conversion device according to this disclosure helps to reduce the resistance of the leads.

[0172] Figure 36 This is a plan view of an energy conversion device according to some embodiments of the present disclosure. Figure 37 It is along Figure 36 A cross-sectional view of the energy conversion device along the F-F' line. Figure 38 It is along Figure 36 A cross-sectional view of the energy conversion device along the G-G' line. (Reference) Figures 36 to 38 In some embodiments, the energy conversion device further includes a first lead LL1 connected to the first portion P1 and a second lead LL2 connected to the second portion P2. The first lead LL1 is connected to a first terminal TM1 of the energy conversion device, and the second lead LL2 is connected to a second terminal TM2 of the energy conversion device.

[0173] In some embodiments, the orthographic projection of the barrier layer BL onto the first substrate BS1 is a ring. In some embodiments, the orthographic projection of the first lead LL1 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring, and the orthographic projection of the second lead LL2 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 is at least partially outside the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 is at least partially outside the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 at least partially overlaps with the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 at least partially overlaps with the ring.

[0174] In some embodiments, the first lead LL1 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the first portion P1 of the first lead LL1 are located in the same layer. Optionally, the first sublayer SUB1 and the first portion P1 of the first lead LL1 are part of an overall structure. In one example, the first sublayer SUB1 and the first portion P1 of the first lead LL1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the first lead LL1 includes the same material as the second electrode layer E2, such as indium tin oxide or fluorine-doped tin oxide. Optionally, the second sublayer SUB2 of the first lead LL1 and the second electrode layer E2 are located in the same layer.

[0175] In some embodiments, the second lead LL2 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the second portion P2 of the second lead LL2 are located in the same layer. Optionally, the first sublayer SUB1 and the second portion P2 of the second lead LL2 are part of an integral structure. In one example, the first sublayer SUB1 and the second portion P2 of the second lead LL2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the second lead LL2 includes the same material as the second electrode layer E2, such as indium tin oxide or fluorine-doped tin oxide. Optionally, the second sublayer SUB2 of the second lead LL2 and the second electrode layer E2 are located in the same layer.

[0176] In some embodiments, the first terminal TM1 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 of the first terminal TM1 and the first sublayer SUB1 of the first lead LL1 are located in the same layer. Optionally, the first sublayer SUB1 of the first terminal TM1 and the first sublayer SUB1 of the first lead LL1 are part of an overall structure. In one example, the first sublayer SUB1 of the first terminal TM1 and the first sublayer SUB1 of the first lead LL1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the first terminal TM1 and the second sublayer SUB2 of the first lead LL1 are located in the same layer. Optionally, the second sublayer SUB2 of the first terminal TM1 and the second sublayer SUB2 of the first lead LL1 are part of an overall structure. In one example, the second sublayer SUB2 of the first terminal TM1 and the second sublayer SUB2 of the first lead LL1 include the same material as the second electrode layer E2, such as indium tin oxide or fluorine-doped tin oxide. Optionally, the second sublayer SUB2 of the first terminal TM1, the second sublayer SUB2 of the first lead LL1, and the second electrode layer E2 are located in the same layer.

[0177] In some embodiments, the first terminal TM1 further includes a third sublayer SUB3. In some embodiments, the third sublayer SUB3 of the first terminal TM1 includes a conductive adhesive material (e.g., conductive tape).

[0178] In some embodiments, the second terminal TM2 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 of the second terminal TM2 and the first sublayer SUB1 of the second lead LL2 are located in the same layer. Optionally, the first sublayer SUB1 of the second terminal TM2 and the first sublayer SUB1 of the second lead LL2 are part of an overall structure. In one example, the first sublayer SUB1 of the second terminal TM2 and the first sublayer SUB1 of the second lead LL2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the second terminal TM2 and the second sublayer SUB2 of the second lead LL2 are located in the same layer. Optionally, the second sublayer SUB2 of the second terminal TM2 and the second sublayer SUB2 of the second lead LL2 are part of an overall structure. In one example, the second sublayer SUB2 of the second terminal TM2 and the second sublayer SUB2 of the second lead LL2 include the same material as the second electrode layer E2, such as indium tin oxide or fluorine-doped tin oxide. Optionally, the second sublayer SUB2 of the second terminal TM2, the second sublayer SUB2 of the second lead LL2, and the second electrode layer E2 are located on the same layer.

[0179] In some embodiments, the second terminal TM2 further includes a third sublayer SUB3. In some embodiments, the third sublayer SUB3 of the second terminal TM2 includes a conductive adhesive material (e.g., conductive tape).

[0180] The inventors of this disclosure have discovered that the energy conversion device according to this disclosure helps to reduce the resistance of the leads.

[0181] Figure 39 This is a plan view of an energy conversion device according to some embodiments of the present disclosure. Figure 40 It is along Figure 39 A cross-sectional view of the energy conversion device along the H-H' line. Figure 41 It is along Figure 39 A cross-sectional view of the energy conversion device along line I-I'. (Reference) Figures 39 to 41 In some embodiments, the energy conversion device further includes a first lead LL1 connected to the first portion P1 and a second lead LL2 connected to the second portion P2. The first lead LL1 is connected to a first terminal TM1 of the energy conversion device, and the second lead LL2 is connected to a second terminal TM2 of the energy conversion device.

[0182] In some embodiments, the orthographic projection of the barrier layer BL onto the first substrate BS1 is a ring. In some embodiments, the orthographic projection of the first lead LL1 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring, and the orthographic projection of the second lead LL2 onto the first substrate BS1 is substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) within the ring. In some embodiments, the orthographic projection of the first terminal TM1 onto the first substrate BS1 is at least partially outside the ring, and the orthographic projection of the second terminal TM2 onto the first substrate BS1 is at least partially outside the ring. In some embodiments, the orthographic projection of the first terminal TM1 on the first substrate BS1 does not substantially overlap with the ring (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%), and the orthographic projection of the second terminal TM2 on the first substrate BS1 does not substantially overlap with the ring (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%).

[0183] In some embodiments, the first lead LL1 and the first portion P1 are located on the same layer. Optionally, the first lead LL1 and the first portion P1 are part of an overall structure. In one example, the first lead LL1 and the first portion P1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second lead LL2 and the second portion P2 are located on the same layer. Optionally, the second lead LL2 and the second portion P2 are part of an overall structure. In one example, the second lead LL2 and the second portion P2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide.

[0184] In some embodiments, the first terminal TM1 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the first lead LL1 of the first terminal TM1 are located in the same layer. Optionally, the first sublayer SUB1 and the first lead LL1 of the first terminal TM1 are part of an integral structure. In one example, the first sublayer SUB1 and the first lead LL1 of the first terminal TM1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the first terminal TM1 includes a conductive adhesive material (e.g., conductive tape). In some embodiments, the orthographic projection of the second sublayer SUB2 of the first terminal TM1 onto the first substrate BS1 substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) does not overlap with the ring.

[0185] In some embodiments, the second terminal TM2 includes a first sublayer SUB1 and a second sublayer SUB2 located on the side of the first sublayer SUB1 away from the first substrate BS1. In some embodiments, the first sublayer SUB1 and the second lead LL2 of the second terminal TM2 are located in the same layer. Optionally, the first sublayer SUB1 and the second lead LL2 of the second terminal TM2 are part of an integral structure. In one example, the first sublayer SUB1 and the second lead LL2 of the second terminal TM2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second sublayer SUB2 of the second terminal TM2 includes a conductive adhesive material (e.g., conductive tape). In some embodiments, the orthographic projection of the second sublayer SUB2 of the second terminal TM2 onto the first substrate BS1 substantially (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%) does not overlap with the ring.

[0186] In some embodiments, the energy conversion device further includes an adhesive layer AD covering the first terminal TM1 and the second terminal TM2. In some embodiments, the orthographic projection of the adhesive layer AD onto the first substrate BS1 does not substantially overlap with the ring (e.g., at least 80%, at least 85%, at least 90%, at least 95%, at least 99%, or 100%).

[0187] The inventors of this disclosure have discovered that the energy conversion device according to this disclosure helps to achieve a smaller device thickness.

[0188] Figure 42 This is a schematic diagram illustrating the structure of a corresponding energy conversion unit in an energy conversion apparatus according to some embodiments of the present disclosure. (Reference) Figure 42 In some embodiments, the energy conversion device further includes a first lead LL1 connected to the first portion P1 and a second lead LL2 connected to a portion of the second electrode layer E2. The first lead LL1 is connected to a first terminal of the energy conversion device, and the second lead LL2 is connected to a second terminal of the energy conversion device.

[0189] In some embodiments, the first lead LL1 and the first portion P1 are located in the same layer. Optionally, the first lead LL1 and the first portion P1 are part of an overall structure. In one example, the first lead LL1 and the first portion P1 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide. In some embodiments, the second lead LL2 and a portion of the second electrode layer E2 are located in the same layer. Optionally, the second lead LL2 and a portion of the second electrode layer E2 are part of an overall structure. In one example, the second lead LL2 and a portion of the second electrode layer E2 are made of the same conductive material, such as indium tin oxide or fluorine-doped tin oxide.

[0190] Figure 43 This is a schematic diagram illustrating the structure of a corresponding energy conversion unit in an energy conversion apparatus according to some embodiments of the present disclosure. (Reference) Figure 43 In some embodiments, the energy conversion device further includes a first lead LL1 connected to a first electrode portion of the second electrode layer E2, and a second lead LL2 connected to a second electrode portion of the second electrode layer E2. The first lead LL1 is connected to a first terminal of the energy conversion device, and the second lead LL2 is connected to a second terminal of the energy conversion device. In some embodiments, the first electrode portion of the second electrode layer E2 is connected to a first portion P1. In some embodiments, the second electrode portion of the second electrode layer E2 is connected to a second portion P2. The first electrode portion and the second electrode portion of the second electrode layer E2 are electrically isolated. The inventors of this disclosure have found that the energy conversion device according to this disclosure facilitates the performance of laser edge cleaning.

[0191] On the other hand, this disclosure also provides a method for manufacturing an energy conversion device. In some embodiments, the method of manufacturing the energy conversion device further includes soldering a first lead and a second lead to a first electrode layer. Conventional thermal soldering temperatures are typically in the range of 200°C to 250°C, while the energy conversion device can withstand temperatures ≤150°C. Furthermore, since the energy conversion device is a thin-film battery with electrodes typically about 100 nm thick, conventional thermal soldering techniques would directly damage the metal electrodes. Conductive tapes are commonly used industrially as an alternative, but these conductive tapes are expensive, their lifespan does not meet the 25-year lifespan requirement of photovoltaic systems, and their rated current cannot meet the high current demands of perovskite photovoltaic cells, exhibiting significant limitations.

[0192] This disclosure provides a novel ultrasonic cold welding method for soldering leads. By employing a low-temperature, limited-spot welding method, the leads are soldered to the electrodes of the energy conversion device. This avoids thermal shock and destructive damage to the thin-film battery electrodes caused by the welding process. Furthermore, the welding position on the energy conversion device is optimized, allowing the leads to be directly soldered to the cathode of the energy conversion device. This improves the utilization rate of the photovoltaic sub-cells and increases cell efficiency.

[0193] The inventors of this disclosure have discovered that, using this method, the operating temperature can be maintained at ≤100°C. The energy conversion device manufactured by this method meets the 25-year lifespan requirement and the maximum current requirement. This disclosure provides a low-cost manufacturing method for a sub-cell that fully utilizes the energy conversion device.

[0194] Figure 44 The process of soldering leads to electrodes according to some embodiments of this disclosure is illustrated. (Refer to...) Figure 44 A welding apparatus WM is provided for welding a lead LL to an electrode ED. In some embodiments, the welding apparatus WM includes a vibration unit VU and a pressure head PH. The vibration unit VU is configured to provide vibration, while the pressure head PH is configured to provide pressure on the lead LL. In one example, the vibration unit VU is configured to provide ultrasonic vibration to the lead LL.

[0195] Ultrasonic welding utilizes high-frequency vibrational energy applied by a pressure head PH to the contact surfaces between the lead LL and the electrode ED. Under pressure, the surfaces of the lead LL and the electrode ED undergo friction, thereby forming a fusion between molecular layers, achieving an effective and stable connection. The inventors of this disclosure have found that this method improves welding efficiency, reduces production time, avoids material degradation that may occur during high-temperature welding, maintains the high photoelectric conversion efficiency of perovskite materials, reduces energy consumption and environmental pollution during the welding process, and improves the overall reliability and durability of the battery due to the precision of ultrasonic welding.

[0196] In a specific example, the welding apparatus WM is configured with the following parameters: vibration frequency in the range of 30 kHz to 40 kHz; amplitude in the range of 40 μm to 80 μm; welding pressure in the range of 0.4 MPa to 0.6 MPa; and welding duration in the range of 0.1 seconds to 1 second.

[0197] Figure 45 This is a plan view of an energy conversion device according to some embodiments of the present disclosure. Figure 46 It is along Figure 45 A cross-sectional view of the energy conversion device along the J-J' line. (Refer to...) Figure 45 and Figure 46 The welding apparatus is configured to weld leads (e.g., a first lead LL1 or a second lead LL2) to a first electrode layer E1 (e.g., a first portion P1 or a second portion P2) at one or more welding points WP. In some embodiments, the first lead LL1 is welded to the first portion P1 of the first electrode layer E1, and the second lead LL2 is welded to the second portion P2 of the first electrode layer E1.

[0198] Ultrasonic cold welding utilizes resonant frequencies to achieve molecular adhesion between the lead and the first electrode layer E1 as the indenter presses the lead against the electrode. Assuming the electrode thickness in the energy conversion device is approximately 100 nm, spot welding (discontinuous contact welding) is employed to prevent mechanical vibration damage to the electrode during the welding process. The size of one or more weld points WP ranges from (4-8 mm) × (4-8 mm), with the specific dimensions determined by the current of the energy conversion device and the lead size, typically not exceeding the lead width. In a specific example, at least one weld point is required for every ≤100 mm of length to ensure good electrical connection and structural stability.

[0199] This method includes reserving spaces on both sides of the energy conversion device for a first part P1 and a second part P2, respectively. The first electrode layer E1 is ultrasonically welded. The welding sequence includes the pressure head, lead wire, first electrode layer E1, and first substrate BS1, where the first substrate BS1 provides direct rigid support. This ensures a stable welding structure and good welding effect between the lead wire and the first electrode layer E1, without mechanical damage to the perovskite layer due to vibration of the carrier head.

[0200] The inventors of this disclosure have discovered that this method maintains the operating temperature at ≤100°C. The energy conversion device manufactured using this method meets the 25-year lifespan requirement and maximum current requirement. This disclosure provides a low-cost manufacturing method for a sub-cell that fully utilizes the energy conversion device.

[0201] Figure 47 This is a plan view of an energy conversion device according to some embodiments of the present disclosure. Figure 48It is along Figure 47 A cross-sectional view of the energy conversion device along the K-K' line. (Reference) Figure 47 and Figure 48 The welding apparatus is configured to weld a first lead LL1 to a first electrode layer E1 (e.g., a first portion P1) at one or more first welding points WP1, and to weld a second lead LL2 to a second electrode layer E2 at one or more second welding points WP2.

[0202] Ultrasonic cold welding utilizes resonant frequencies to achieve molecular adhesion between the lead and the first electrode layer E1 as the indenter presses the lead against the electrode. Assuming the electrode thickness in the energy conversion device is approximately 100 nm, spot welding (discontinuous contact welding) is employed to prevent mechanical vibration damage to the electrode during the welding process. The size of one or more weld points WP ranges from (4-8 mm) × (4-8 mm), with the specific dimensions determined by the current of the energy conversion device and the lead size, typically not exceeding the lead width. In a specific example, at least one weld point is required for every ≤100 mm of length to ensure good electrical connection and structural stability.

[0203] This method involves reserving space on one side of the energy conversion device, while directly utilizing the second electrode layer E2 as the cathode on the other side. The first electrode layer E1 of the conductive glass on the left and the second electrode layer E2 on the right are ultrasonically welded.

[0204] The welding sequence on the left is: pressure head, first lead LL1, first electrode layer E1, and first substrate BS1, where the first substrate BS1 provides direct rigid support. This ensures a stable welding structure between the first lead LL1 and the first electrode layer E1, thereby producing good welding results and preventing mechanical damage to the perovskite layer due to carrier head vibration.

[0205] The welding sequence on the right side is: indenter, second lead LL2, second electrode layer E2 and other layers (including hole transport layer HTL, perovskite layer PL and electron transport layer ETL), first electrode layer E1 and first substrate BS1. Vibrations from the indenter can be transmitted to the perovskite layer PL, potentially causing mechanical damage. Therefore, it is necessary to precisely control the vibration frequency and amplitude of the indenter (reducing the vibration frequency and amplitude of the indenter) to prevent damage to the perovskite layer PL.

[0206] The inventors of this disclosure have discovered that this method maintains the operating temperature at ≤100°C. The energy conversion device manufactured using this method meets the 25-year lifespan requirement and maximum current requirement. This disclosure provides a low-cost manufacturing method for a sub-cell that fully utilizes the energy conversion device.

[0207] For illustrative and descriptive purposes, the foregoing description of embodiments of the invention has been provided. It is not exhaustive, nor is it intended to limit the invention to the precise forms or exemplary embodiments disclosed. Therefore, the foregoing description should be considered illustrative rather than restrictive. Clearly, many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described to explain the principles of the invention and its best mode of practical application, thereby enabling those skilled in the art to understand the various embodiments of the invention and the various modifications suitable for the particular use or implementation contemplated. The scope of the invention is intended to be defined by the appended claims and their equivalents, wherein, unless otherwise stated, all terms are to be interpreted in their broadest reasonable sense. Therefore, the terms “the invention,” “the present invention,” etc., do not necessarily limit the scope of the claims to the specific embodiments, and references to exemplary embodiments of the invention do not imply limitation of the invention, nor should such limitation be inferred. The invention is defined only by the spirit and scope of the appended claims. Furthermore, these claims may involve the use of “first,” “second,” etc., followed by nouns or elements. These terms should be understood as nomenclature and should not be construed as limiting the number of elements modified by these nomenclatures unless a specific number has been given. Any advantages and benefits described may not apply to all embodiments of the invention. It should be understood that changes to the described embodiments can be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims. Furthermore, the elements and components in this disclosure are not intended for public distribution, whether or not they are expressly recited in the appended claims.

Claims

1. An energy conversion device, comprising: First substrate; The first electrode layer is located on the first substrate. A hole transport layer is located on the side of the first electrode layer away from the first substrate. A perovskite layer is located on the side of the hole transport layer away from the first substrate. An electron transport layer is located on the side of the perovskite layer away from the first substrate. as well as The second electrode layer is located on the side of the electron transport layer away from the first substrate. The first electrode layer includes a first portion and a second portion spaced apart from each other; The first portion is electrically isolated from the second electrode layer; as well as The second part is electrically connected to the second electrode layer.

2. The energy conversion device according to claim 1, wherein, The first portion is in contact with the hole transport layer; and The second part is in contact with the hole transport layer.

3. The energy conversion device according to claim 1, comprising a plurality of energy conversion units and one or more gaps separating the plurality of energy conversion units.

4. The energy conversion device according to claim 3, wherein, Each of the plurality of energy conversion units includes: The first portion and the second portion of the first electrode layer; The hole transport block of the hole transport layer is located on the first part and the second part; The perovskite block of the perovskite layer is located on the side of the hole transport block away from the first part and the second part; The electron transport block of the electron transport layer is located on the side of the perovskite block away from the hole transport block; and The second electrode block of the second electrode layer is located on the side of the electron transport block away from the perovskite block.

5. The energy conversion device according to claim 4, wherein, The second electrode block extends through a corresponding groove in one or more grooves to connect to the second portion, the one or more grooves extending through the electron transport block, the perovskite block, and the hole transport block.

6. The energy conversion device according to any one of claims 1 to 5, further comprising at least one of the following: A hole passivation layer is located on the side of the hole transport layer away from the first substrate. A perovskite passivation layer is located on the side of the perovskite layer away from the first substrate. An electron modification layer is located on the side of the electron transport layer away from the first substrate; or The second substrate is located on the side of the second electrode layer away from the first substrate.

7. The energy conversion device according to claim 4, wherein, Each energy conversion unit further includes at least one of the following: The hole passivation block of the hole passivation layer is located on the side of the hole transport block away from the first part and the second part; The perovskite passivation block of the perovskite passivation layer is located on the side of the perovskite block away from the hole passivation block; or The electron modification block of the electron modification layer is located on the side of the electron transport block away from the perovskite passivation block.

8. The energy conversion device according to claim 3 further includes one or more grooves; in, Each of the one or more gaps extends through the second electrode layer, the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the first electrode layer; The sidewalls of each of the one or more gaps have an inclination angle in the range of 45 degrees to 90 degrees; Each of the one or more grooves extends through the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the second part; Each groove is configured to accommodate a portion of the second electrode layer; The portion of the second electrode layer extends into the corresponding groove to connect to the second portion; and The sidewalls of each groove have an inclination angle ranging from 45 degrees to 90 degrees.

9. The energy conversion device according to any one of claims 1 to 5, further comprising: An auxiliary electrode layer is located on the side of the second electrode layer away from the first substrate. One or more grooves; as well as One or more second grooves; Each of the one or more grooves extends through the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the second part; Each of the one or more grooves is configured to accommodate a portion of the second electrode layer; The portion of the second electrode layer extends into the corresponding groove to connect to the second portion; Each of the one or more second grooves is located on the side of the second electrode layer in the corresponding groove that is away from the first electrode layer; The auxiliary electrode layer includes one or more auxiliary electrode blocks; Each of the second recesses is configured to accommodate a corresponding electrode block from the one or more auxiliary electrode blocks; and Each of the one or more auxiliary electrode blocks contacts a portion of the second electrode layer in the corresponding groove.

10. The energy conversion device according to claim 3, further comprising: A planarization layer is located on the side of the second electrode layer away from the first substrate. One or more grooves; as well as One or more second grooves; Each of the one or more grooves extends through the electron transport layer, the perovskite layer, and the hole transport layer to expose a portion of the second part; Each of the one or more grooves is configured to accommodate a portion of the second electrode layer; The portion of the second electrode layer extends into the corresponding groove to connect to the second portion; Each of the one or more second grooves is located on the side of the second electrode layer in the corresponding groove that is away from the first electrode layer; The planarization layer includes one or more first planarization blocks and one or more second planarization blocks; Each of the one or more gaps is configured to accommodate a corresponding first flattening block among the one or more first flattening blocks; and Each of the second grooves is configured to accommodate a corresponding second flattening block among the one or more second flattening blocks.

11. The energy conversion device according to claim 1, further comprising: First terminal; Second terminal; A first lead is connected to the first terminal and the first portion; as well as The second lead is connected to the second terminal.

12. The energy conversion device according to claim 11, wherein, The first lead is located on the side of the first portion away from the first substrate; and The second lead is located on the side of the second portion away from the first substrate.

13. The energy conversion device according to claim 11, wherein, The first lead and the first portion are located on the same layer and are part of the overall structure; and The second lead and the second portion are located on the same layer and are part of the overall structure.

14. The energy conversion device according to claim 11, wherein, The first lead includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate. The first sublayer and the first portion of the first lead are located in the same layer and are part of the overall structure; The second lead includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate; and The first sublayer and the second portion of the second lead are located on the same layer and are part of the overall structure.

15. The energy conversion device of claim 11, further comprising a barrier layer located on the first substrate, the barrier layer being configured to accommodate an encapsulation layer and a plurality of energy conversion units; in, The orthogonal projection of the barrier layer onto the first substrate is a ring; The orthogonal projection of the first lead onto the first substrate is substantially located within the ring; The orthographic projection of the second lead onto the first substrate is substantially within the ring; The orthographic projection of the first terminal onto the first substrate does not substantially overlap with the ring. The orthographic projection of the second terminal onto the first substrate does not substantially overlap with the ring; The first lead and the first portion are located on the same layer and are part of the overall structure; The second lead and the second portion are located on the same layer and are part of the overall structure; The first terminal includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate. The first sub-layer of the first terminal and the first lead are located on the same layer and are part of the overall structure; The second terminal includes a first sublayer and a second sublayer located on the side of the first sublayer away from the first substrate. The first sub-layer of the second terminal and the second lead are located on the same layer and are part of the overall structure; The orthographic projection of the second sublayer of the first terminal onto the first substrate substantially does not overlap with the ring; and The orthographic projection of the second sublayer of the second terminal onto the first substrate does not substantially overlap with the ring.

16. The energy conversion device according to claim 11, wherein, The second lead is connected to a portion of the second electrode layer; The first lead and the first portion are located on the same layer and are part of the overall structure; as well as The second lead and the portion of the second electrode layer are located in the same layer and are part of the overall structure.

17. The energy conversion device according to claim 1, further comprising: First terminal; Second terminal; A first lead is connected to the first terminal and to the first electrode portion of the second electrode layer; as well as The second lead is connected to the second terminal and to the second electrode portion of the second electrode layer; Wherein, the first electrode portion of the second electrode layer is connected to the first portion; The second electrode portion of the second electrode layer is connected to the second portion; and The first electrode portion of the second electrode layer is electrically isolated from the second electrode portion.

18. A method for manufacturing an energy conversion device, comprising: A first electrode layer is formed on a first substrate. A hole transport layer is formed on the side of the first electrode layer away from the first substrate. A perovskite layer is formed on the side of the hole transport layer away from the first substrate. An electron transport layer is formed on the side of the perovskite layer away from the first substrate. as well as A second electrode layer is formed on the side of the electron transport layer away from the first substrate. The formation of the first electrode layer includes forming a first portion and forming a second portion spaced apart from the first portion; The first portion is electrically isolated from the second electrode layer; and The second part is electrically connected to the second electrode layer.

19. The method of claim 18, further comprising: A first lead is formed on the first portion; A second lead is formed on the second part; The first lead is soldered to the first part using an ultrasonic cold welding process. as well as The second lead is soldered to the second part using an ultrasonic cold soldering process.

20. The method of claim 18, further comprising: A first lead is formed on the first portion; A second lead is formed on the second electrode layer; The first lead is soldered to the first part using an ultrasonic cold welding process. as well as The second lead is soldered to the second electrode layer using an ultrasonic cold welding process.

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