Display device, display module, and electronic apparatus

Abstract

Provided is a novel display device having superior convenience, utility, or reliability. This display device comprises an insulating layer, a first light-emitting device, a second light-emitting device, and a structure. The structure has a support portion and an overhang. The support portion is positioned between the first light-emitting device and the second light-emitting device, and the overhang protrudes over the first light-emitting device. The first light-emitting device includes a first electrode, a second electrode, a first unit, and a first layer. The first layer is sandwiched between the first unit and the first electrode, and is formed of a material having hole-transporting properties. The first layer has a first region and a second region, and the second region is positioned at an end portion of the first layer and is close to the support portion. The first region is in contact with the first unit and the first electrode, and is formed of a material containing a high concentration of an electron accepting-material. As a result, it is possible to suppress a phenomenon in which a current flows between the second electrode and the first electrode via the first layer.

Description

Display devices, display modules, electronic devices

[0001] One aspect of the present invention relates to a display device, a display module, an electronic device, or a semiconductor device.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, a method, or a method of manufacture. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. More specifically, examples of the technical fields of one aspect of the present invention disclosed herein include information processing devices, semiconductor devices, memory devices, methods for driving them, or methods for manufacturing them.

[0003] Patent Document 1 describes a subpixel circuit that can be used in organic light-emitting diode (OLED) displays and a method for forming a subpixel circuit.

[0004] WO2022 / 039890

[0005] One aspect of the present invention aims to provide a novel display device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel display module that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel electronic device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device.

[0006] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims.

[0007] (1) One aspect of the present invention is a display device having an insulating layer, a first light-emitting device, a second light-emitting device, and a structure. The first light-emitting device is located on the insulating layer, and the second light-emitting device is located on the insulating layer alongside the first light-emitting device.

[0008] The structure comprises a support portion and an overhang portion. The support portion is located between the first light-emitting device and the second light-emitting device and is situated on an insulating layer. The overhang portion has a shape that extends from the support portion toward the top of the first light-emitting device.

[0009] The first light-emitting device includes a first electrode, a second electrode, a first unit, and a first layer. The first electrode is located on an insulating layer, and the second electrode overlaps the first electrode. The first unit is sandwiched between the second electrode and the first electrode, and the first unit contains a first light-emitting material.

[0010] The first layer is sandwiched between the first unit and the first electrode, and the first layer comprises a hole-transporting material, and the first layer comprises a first region and a second region. The second region is located at the edge of the first layer, is closer to the support than the first region, and is in contact with the first unit. The first region is in contact with the first unit and the first electrode, and contains an electron-accepting material at a higher concentration than the second region.

[0011] This allows the conductivity of the second region to be lower than that of the first region. Furthermore, a region of low conductivity in the first layer can be provided at the edge of the first light-emitting device. Additionally, even if the second electrode and the first layer come into contact at the edge of the first light-emitting device, the phenomenon of current flowing between the second electrode and the first layer can be suppressed. Furthermore, the phenomenon of current flowing between the second electrode and the first electrode via the second region of the first layer can be suppressed. Finally, the phenomenon of current flowing between the second electrode and the first electrode without a predetermined current flowing through the first unit can be suppressed. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0012] (2) Another aspect of the present invention is the above-described display device, wherein the first light-emitting device comprises a second unit and a second layer.

[0013] A second unit is sandwiched between a second electrode and a first unit, and the second unit comprises a second luminescent material. A second layer is sandwiched between the second unit and the first unit, and the second layer comprises a hole-transporting material, and the second layer comprises a third region and a fourth region. The fourth region is located at the edge of the second layer, is closer to the support than the third region, and is in contact with the second unit. The third region is in contact with the second unit and overlaps with the first electrode, and the third region comprises an electron-accepting material at a higher concentration than the fourth region.

[0014] This allows the conductivity of the fourth region to be lower than that of the third region. Furthermore, a region of low conductivity in the second layer can be provided at the end of the first light-emitting device. Additionally, even if the second electrode and the second layer come into contact at the end of the first light-emitting device, the phenomenon of current flowing between the second electrode and the second layer can be suppressed. Furthermore, the phenomenon of current flowing between the second electrode and the first electrode via the fourth region of the second layer can be suppressed. Finally, the phenomenon of current flowing between the second electrode and the second layer without a predetermined current flowing to the second unit can be suppressed. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0015] (3) Another aspect of the present invention is the above-mentioned display device, wherein the awning portion covers a second area.

[0016] This allows the awning portion to be used to shield the electron-accepting material when forming the first layer. Furthermore, a second region can be formed in the shadow of the awning portion. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0017] (4) Another aspect of the present invention is the above-mentioned display device, wherein the awning portion covers a fourth region.

[0018] This allows the awning to be used to shield the electron-accepting material when forming the second layer. Furthermore, a fourth region can be formed in the area shaded by the awning. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0019] (5) Another aspect of the present invention is the above-described display device, wherein the structure comprises a base portion. The base portion is sandwiched between the support portion and the insulating layer, and the base portion comprises a portion sandwiched between the first layer and the first electrode. The base portion also comprises a portion that covers the end of the first electrode and contacts the second region, and is insulating.

[0020] This makes it possible to suppress the phenomenon of the second electrode and the first electrode coming into contact at the edge of the first light-emitting device. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0021] (6) Another aspect of the present invention is the above-described display device in which the support portion is conductive. The support portion is electrically connected to the second electrode. The base portion is provided with a groove, which is located between the support portion and the second light-emitting device.

[0022] This allows the support portion to be used for wiring to supply a predetermined potential to the second electrode. Furthermore, the groove can be used to keep the second light-emitting device away from the support portion, preventing contact. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0023] (7) Another aspect of the present invention is a display module having a display device according to any one of the above, and at least one of a connector and an integrated circuit.

[0024] (8) Another aspect of the present invention is an electronic device having the display device described in any one of the above, and at least one of a battery, a camera, a speaker, and a microphone.

[0025] One aspect of the present invention can provide a novel display device with superior convenience, usefulness, or reliability. Alternatively, it can provide a novel display module with superior convenience, usefulness, or reliability. Alternatively, it can provide a novel electronic device with superior convenience, usefulness, or reliability. Alternatively, it can provide a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device.

[0026] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims.

[0027] Figures 1A, 1B, and 1C illustrate the configuration of a display device according to an embodiment. Figures 2A and 2B illustrate the configuration of a display device according to an embodiment. Figure 3 illustrates the configuration of a display device according to an embodiment. Figure 4 illustrates the configuration of a display device according to an embodiment. Figure 5 illustrates the configuration of a display device according to an embodiment. Figure 6 illustrates the configuration of a display device according to an embodiment. Figure 7 illustrates the configuration of a display device according to an embodiment. Figure 8 illustrates the configuration of a display device according to an embodiment. Figure 9 illustrates the configuration of a display device according to an embodiment. Figure 10 illustrates the configuration of a display device according to an embodiment. Figure 11 illustrates the configuration of a display device according to an embodiment. Figure 12 illustrates the configuration of a display device according to an embodiment. Figure 13 illustrates the method for manufacturing a display device according to an embodiment. Figure 14 illustrates the method for manufacturing a display device according to an embodiment. Figure 15 illustrates the method for manufacturing a display device according to an embodiment. Figure 16 illustrates the method for manufacturing a display device according to an embodiment. Figure 17 illustrates the method for manufacturing a display device according to an embodiment. Figure 18 illustrates the method for manufacturing a display device according to an embodiment. Figure 19 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 20 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 21 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 22 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 23 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 24 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 25 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 26 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 27 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figure 28 is a diagram illustrating a method for manufacturing a display device according to an embodiment. Figures 29A and 29B are diagrams illustrating the configuration of a display module according to an embodiment. Figures 30A and 30B are diagrams illustrating the configuration of a display module according to an embodiment.Figures 31A, 31B, 31C, 31D, and 31E illustrate the configuration of a display device according to an embodiment. Figure 32 illustrates the configuration of a display device according to an embodiment. Figure 33 illustrates the configuration of a display device according to an embodiment. Figure 34 illustrates the configuration of a display device according to an embodiment. Figure 35 illustrates the configuration of a display device according to an embodiment. Figure 36 illustrates the configuration of a display device according to an embodiment. Figure 37 illustrates the configuration of a display device according to an embodiment. Figure 38 illustrates the configuration of a display device according to an embodiment. Figures 39A, 39B, 39C, and 39D illustrate the configuration of a transistor that can be used in a display device according to an embodiment. Figures 40A, 40B, 40C, and 40D illustrate the configuration of an electronic device according to an embodiment. Figures 41A, 41B, 41C, 41D, 41E, and 41F illustrate the configuration of an electronic device according to an embodiment. Figures 42A, 42B, 42C, 42D, 42E, 42F, and 42G are diagrams illustrating the configuration of an electronic device according to an embodiment.

[0028] A display device according to one aspect of the present invention comprises an insulating layer, a first light-emitting device, a second light-emitting device, and a structure. The first light-emitting device is located on the insulating layer, and the second light-emitting device is located on the insulating layer alongside the first light-emitting device. The structure comprises a support portion and an overhang portion, the support portion being located between the first and second light-emitting devices and on the insulating layer. The overhang portion has a shape that protrudes from the support portion toward upward toward the first light-emitting device. The first light-emitting device comprises a first electrode, a second electrode, a first unit, and a first layer. The first electrode is located on the insulating layer, and the second electrode overlaps with the first electrode. The first unit is sandwiched between the second electrode and the first electrode, and the first unit comprises a first light-emitting material. The first layer is sandwiched between the first unit and the first electrode, and the first layer comprises a hole-transporting material, and the first layer comprises a first region and a second region. The second region is located at the edge of the first layer, is closer to the support than the first region, and is in contact with the first unit. The first region is in contact with the first unit and the first electrode, and contains an electron-accepting material at a higher concentration than the second region.

[0029] This allows the conductivity of the second region to be lower than that of the first region. Furthermore, a region of low conductivity in the first layer can be provided at the edge of the first light-emitting device. Additionally, even if the second electrode and the first layer come into contact at the edge of the first light-emitting device, the phenomenon of current flowing between the second electrode and the first layer can be suppressed. Furthermore, the phenomenon of current flowing between the second electrode and the first electrode via the second region of the first layer can be suppressed. Finally, the phenomenon of current flowing between the second electrode and the first electrode without a predetermined current flowing through the first unit can be suppressed. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0030] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the form and details thereof can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are commonly used among different drawings for the same part or parts having the same or similar functions, and the repeated description thereof will be omitted.

[0031] In the drawings attached to this specification, the components are classified by function and shown as block diagrams as independent blocks from each other. However, it is difficult to completely separate the actual components by function, and one component may be related to multiple functions.

[0032] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to FIGS. 1A to 12.

[0033] FIG. 1A is a perspective view for explaining the configuration of a display device according to one aspect of the present invention. FIG. 1B is a front view of FIG. 1A, and FIG. 1C is a front view for explaining a part of FIG. 1A.

[0034] FIG. 2A is a cross-sectional view for explaining the configuration of a display device according to one aspect of the present invention at a cutting line passing through points P1, P0, and P2 shown in FIG. 1C, and FIG. 2B is a cross-sectional view for explaining a different configuration from FIG. 2A.

[0035] FIG. 3 is a cross-sectional view for explaining the configuration of a display device according to one aspect of the present invention at a cutting line passing through points P0 and P1 shown in FIG. 1C.

[0036] FIG. 4 is a cross-sectional view for explaining the configuration of a display device according to one aspect of the present invention at a cutting line passing through points P0 and P2 shown in FIG. 1C.

[0037] FIG. 5 is a cross-sectional view for explaining the configuration of a display device according to one aspect of the present invention different from the configuration shown in FIG. 3.

[0038] FIG. 6 is a perspective view schematically explaining a part of the structure of a structure included in a display device according to one aspect of the present invention. Specifically, it is a perspective view for explaining the structure of a groove provided in a pedestal portion.

[0039] Figure 7 is a cross-sectional view illustrating the shape of a structure in a display device according to one aspect of the present invention, and a method for controlling the shape of region 104a(i) and region 104a(o) of the film 104a by controlling the flight direction of material flying from the deposition source.

[0040] Figure 8 is a cross-sectional view illustrating the shape of a structure in a display device according to one aspect of the present invention, and a method for controlling the shape of region 106a1(i) and region 106a1(o) of the film 106a1 by controlling the flight direction of material flying from the deposition source.

[0041] Figure 9 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention, which has a structure with a different shape from the configuration shown in Figure 3.

[0042] Figure 10 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention, which has a structure with a different shape from the configuration shown in Figure 9.

[0043] Figure 11 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention, which has a structure with a different shape from the configuration shown in Figure 10.

[0044] Figure 12 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention, which differs from the configuration shown in Figure 3.

[0045] <Example of Display Device Configuration 1> The display device 700 described in this embodiment has a display area 731 (see Figures 1A and 1B).

[0046] The display area 731 comprises a pair of pixels 703. The pair of pixels 703 includes pixels 702A, 702B, and 702C (see Figure 1C).

[0047] Pixel 702A comprises a light-emitting device 550A and a pixel circuit 530A, and the light-emitting device 550A is connected to the pixel circuit 530A (see Figures 2A and 2B). In this specification, "connection" includes "electrical connection".

[0048] "A and B are electrically connected" means that A and B are connected without an insulator (A and B are connected via a conductor or semiconductor; A and B are in contact), and that during the operation of the circuit, there is a timing when electrical signals are exchanged or potential interactions occur between A and B. In other words, even if there is a timing during the operation of the circuit when no electrical signals are exchanged or potential interactions occur between A and B, if there is a timing when electrical signals are exchanged or potential interactions occur between A and B, then it can be said that "A and B are electrically connected."

[0049] Pixel 702B comprises a light-emitting device 550B and a pixel circuit 530B, the light-emitting device 550B being connected to the pixel circuit 530B.

[0050] Pixel 702C comprises a light-emitting device 550C and a pixel circuit 530C, the light-emitting device 550C being electrically connected to the pixel circuit 530C.

[0051] The display device 700 also has a functional layer 520, a substrate 510, and a layer 573.

[0052] The functional layer 520 includes an insulating layer 521. The insulating layer 521 is sandwiched between the light-emitting device 550A and the pixel circuit 530A and provides insulation.

[0053] The functional layer 520 also includes pixel circuits 530A, 530B, and 530C. Pixel circuit 530A is sandwiched between the light-emitting device 550A and the substrate 510, pixel circuit 530B is sandwiched between the light-emitting device 550B and the substrate 510, and pixel circuit 530C is sandwiched between the light-emitting device 550C and the substrate 510. The functional layer 520 also includes an insulating layer 501 (see Figure 3). Pixel circuit 530A is sandwiched between the insulating layer 501 and the insulating layer 521.

[0054] Layer 573 has an overlapping region that overlaps with the insulating layer 521, and the overlapping region includes a display region 731 (see Figure 1A). Layer 573 has a light-emitting device 550A sandwiched between it and the insulating layer 521 (see Figure 2A). For example, a material that transmits light emitted by the light-emitting device and has a refractive index of 1.8 or higher for light of the reference wavelength d line (wavelength 587.56 nm) can be used for layer 573. Alternatively, a film that is impermeable to impurities such as water or oxygen can be used for layer 573. Specifically, a film containing nitrogen and silicon can be used for layer 573.

[0055] In one aspect of the present invention, the light-emitting device 550A of the display device 700 emits optical ELA in a direction where the pixel circuit 530A is not located, the light-emitting device 550B emits optical ELB in a direction where the pixel circuit 530B is not located, and the light-emitting device 550C emits optical ELC in a direction where the pixel circuit 530C is not located (see Figure 2A). In other words, the display device 700 in one aspect of the present invention is a top-emission type display device.

[0056] Furthermore, in one embodiment of the present invention, the light-emitting device 550A of the display device 700 emits optical ELA in the direction in which the pixel circuit 530A is located, the light-emitting device 550B emits optical ELB in the direction in which the pixel circuit 530B is located, and the light-emitting device 550C emits optical ELC in the direction in which the pixel circuit 530C is located (see Figure 2B). In other words, the display device 700 in one embodiment of the present invention is a bottom-emission type display device.

[0057] <Example of Display Device Configuration 2> The display device 700 described in this embodiment includes an insulating layer 521, a light-emitting device 550A, a light-emitting device 550B, and a structure 529 (see Figure 3).

[0058] Furthermore, the light-emitting device 550A is located on the insulating layer 521, and the light-emitting device 550B is located on the insulating layer 521 alongside the light-emitting device 550A.

[0059] <Example of the configuration of structure 529> Structure 529 comprises a support portion 529Spt and an overhang portion 529Cnp. The support portion 529Spt is located between the light-emitting devices 550A and 550B and is located on the insulating layer 521. The overhang portion 529Cnp has a shape that protrudes from the support portion 529Spt toward the upper part of the light-emitting device 550A. Furthermore, a structure in which the upper width is wider than the lower width can be used for the overhang portion 529Cnp. In other words, an inverse tapered shape can be used for the overhang portion 529Cnp.

[0060] <Example of configuration of light-emitting device 550A 1> The light-emitting device 550A includes an electrode 551A, an electrode 552A, a unit 103A, and a layer 104A. The light-emitting device 550A also includes a layer 105A.

[0061] <Example of Electrode 551A Configuration> Electrode 551A is located on the insulating layer 521. Conductive materials can be used for electrode 551A. Specifically, a film containing a metal, alloy, or conductive compound can be used for electrode 551A in a single layer or multilayer configuration. When electrode 551A is used as the anode of light-emitting device 550A, a material with a work function of 4.0 eV or higher can be preferably used.

[0062] Furthermore, for example, a metal film that transmits some of the light and reflects other parts of the light can be used for the electrode 551A. This allows a microcavity structure to be provided in the light-emitting device 550A. Alternatively, light of a predetermined wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow full width at half maximum can be extracted. Alternatively, vividly colored light can be extracted.

[0063] Furthermore, for example, a film that is transparent to visible light can be used for the electrode 551A. Specifically, a thin metal film, alloy film, or conductive oxide film that is thin enough to transmit light can be used for the electrode 551A in a single layer or in a multilayer structure.

[0064] Furthermore, a layer REFA can be placed between the electrode 551A and the insulating layer 521. For example, a layer containing aluminum or a layer containing silver can be used for the layer REFA. This allows for efficient reflection of the light emitted by the light-emitting device 550A toward the layer REFA.

[0065] 《Example of Electrode 552A Configuration》 Electrode 552A overlaps with electrode 551A. Conductive materials can be used for electrode 552A. Specifically, a film containing a metal, alloy, or conductive compound can be used for electrode 552A in a single layer or laminated form. For example, materials that can be used for electrode 551A can be used for electrode 552A.

[0066] In particular, when electrode 552A is used as the cathode of light-emitting device 550A, a material with a smaller work function than electrode 551A can be suitably used for electrode 552A. Specifically, a material with a work function of 3.8 eV or less is preferred.

[0067] <Example of Layer 105A Configuration> Layer 105A is sandwiched between electrode 552A and unit 103A, and layer 105A is in contact with electrode 552A. For example, when electrode 552A functions as a cathode, an electron-injection material can be used for layer 105A. This allows layer 105A to receive electrons from electrode 552A and transfer them to unit 103A.

[0068] For example, a composite material of an electron-transporting material ETM and an electron-donating material DM can be used as an electron-injecting material.

[0069] [Electron-transporting material ETM] For example, under the condition that the square root of the electric field strength V / cm is 600, the electron mobility is 1 × 10⁻⁶ −７ cm ２ / Vs or more, 5×10 −５ cm ２ Materials with a Vs of 0.5 or less can be suitably used as electron transport materials.

[0070] [Electron-donating materials DM] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as electron-donating materials DM. Alternatively, organic compounds such as tetratianaphthalene (abbreviated as TTN), nickerosene, and decamethylnickerosene can also be used as electron-donating materials DM.

[0071] Examples of alkali metal compounds (including oxides, halides, and carbonates) that can be used include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinolinatolithium (abbreviated as Liq), etc.

[0072] Alkaline earth metal compounds (including oxides, halides, and carbonates) include calcium fluoride (CaF4). ２ ), etc. can be used.

[0073] <Example of Unit 103A Configuration> Unit 103A is sandwiched between electrodes 552A and 551A, and Unit 103A includes a luminescent material EMA. For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence can be used as the luminescent material EMA.

[0074] Furthermore, a structure in which multiple layers are stacked can be used in unit 103A. For example, a layer having hole-transporting properties, a layer containing the luminescent material EMA, and a layer having electron-transporting properties can be used in unit 103A. It is preferable to have a structure in which the layer containing the luminescent material EMA is placed in the region where holes and electrons recombine. For example, the layer having hole-transporting properties is placed on the anode side of the layer containing the luminescent material EMA, and the layer having electron-transporting properties is placed on the cathode side of the layer containing the luminescent material EMA. This allows the energy generated by carrier recombination to be efficiently emitted as light.

[0075] <Example of the composition of layer 104A> Layer 104A is sandwiched between unit 103A and electrode 551A. For example, when electrode 551A functions as an anode, layer 104A contains a hole-transporting material HTM.

[0076] [Material HTM with hole transporting property] For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, polymer compounds (oligomers, dendrimers, polymers, etc.), etc. can be used as the material HTM with hole transporting property. Also, a material with a hole mobility of 1×10 −６ cm ２ / Vs or more can be preferably used as the material HTM with hole transporting property.

[0077] Layer 104A includes region 104A(i) and region 104A(o). Region 104A(o) is located at the end of layer 104A, and region 104A(o) is located closer to the support portion 529Spt than region 104A(i). Also, region 104A(o) is in contact with unit 103A. In the description regarding the configuration example of the structure 529 described later, an example of the method for forming region 104A(i) and region 104A(o) in layer 104A will be described in detail using FIG. 7.

[0078] Region 104A(i) is in contact with unit 103A and electrode 551A. Also, for example, when electrode 551A functions as an anode, region 104A(i) contains the material AM having electron accepting property at a higher concentration than region 104A(o).

[0079] For example, when the square root of the electric field strength V / cm is 600, a material with a hole mobility of 1×10 −３ cm / Vs or less can be used for region 104A(i) in the film state. Also, a film with an electrical resistivity of 1×10 ４ Ω·cm or more and 1×10 ７ Ω·cm or less can be used for region 104A(i). Preferably, a film with an electrical resistivity of 5×10 ４ Ω·cm or more and 1×10 ７ Ω·cm or less can be used for region 104A(i). More preferably, a film with an electrical resistivity of 1×10 ５ Ω·cm or more and 1×10 ７ Ω·cm or less can be used for region 104A(i).

[0080] Furthermore, using electron spin resonance spectroscopy in the film state, 1 × 10 １８ spins / cm ３ Materials exhibiting the above spin densities can be used in region 104A(i). This makes it easier to inject holes from electrode 551A, for example, or to reduce the driving voltage of light-emitting device 550A.

[0081] [Electron-accepting materials AM] Organic compounds and inorganic compounds can be used as electron-accepting materials AM.

[0082] For example, compounds having electron-withdrawing groups (halogen groups or cyano groups) can be used in electron-accepting material AM. Furthermore, electron-accepting organic compounds are easily vapor-deposited and readily formed into films. This increases the productivity of the light-emitting device 550A.

[0083] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. can be used.

[0084] In particular, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple complex atoms, such as HAT-CN, are thermally stable and therefore preferred.

[0085] Furthermore, [3]radialene derivatives having electron-withdrawing groups (especially halogen groups such as fluoro groups or cyano groups) are preferred because they have very high electron-accepting properties.

[0086] Specifically, α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,3,4,5,6-pentafluorobenzeneacetonitrile], etc., can be used.

[0087] Furthermore, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used in materials that have electron-accepting properties.

[0088] Also, phthalocyanine (abbreviation: H ２ Phthalocyanine compounds or complex compounds such as Pc, copper(II) phthalocyanine (abbreviated as CuPc), and compounds having an aromatic amine skeleton such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB) and N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as DNTPD) can be used.

[0089] This allows the conductivity of region 104A(o) to be lower than that of region 104A(i). Furthermore, a region of low conductivity in layer 104A can be provided at the end of the light-emitting device 550A. In addition, even if the electrode 552A and layer 104A come into contact at the end of the light-emitting device 550A, the occurrence of current flowing between the electrode 552A and layer 104A can be suppressed. Furthermore, the occurrence of current flowing between the electrode 552A and electrode 551A through region 104A(o) of layer 104A can be suppressed. Furthermore, the occurrence of current flowing between the electrode 552A and electrode 551A without a predetermined current flowing through unit 103A can be suppressed. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0090] <Example of configuration of light-emitting device 550B 1> The light-emitting device 550B comprises an electrode 551B, a layer 104B, and a unit 103B (see Figure 3). The light-emitting device 550B also has a layer 105B.

[0091] 《Example of Electrode 551B Configuration》 Electrode 551B is formed on the insulating layer 521. Electrode 551B is adjacent to electrode 551A, and electrode 551B is positioned with a structure 529 in between it and electrode 551A. For example, materials that can be used for electrode 551A can also be used for electrode 551B.

[0092] Furthermore, a layer REFB can be placed between the electrode 551B and the insulating layer 521. For example, a material that can be used for layer REFA can be used for layer REFB.

[0093] 《Example of Electrode 552B Configuration》 Electrode 552B overlaps with electrode 551B. For example, materials that can be used for electrode 552A can also be used for electrode 552B.

[0094] <Example of Layer 105B Configuration> Layer 105B is sandwiched between the electrode 552B and the unit 103B, and layer 105B is in contact with the electrode 552B. For example, the same material that can be used for layer 105A can be used for layer 105B.

[0095] 《Example of Unit 103B Configuration》 Unit 103B includes the luminescent material EMB. Any material that can be used for the luminescent material EMA can be used for the luminescent material EMB. For example, a material that emits light of a different hue than the light emitted by the luminescent material EMA can be used for the luminescent material EMB.

[0096] 《Example of Layer 104B Configuration》 Layer 104B is sandwiched between the electrode 551B and the unit 103B. Also, layer 104B is positioned with a structure 529 in between it and layer 104A. For example, the same material that can be used for layer 104A can be used for layer 104B.

[0097] <Example of configuration of light-emitting device 550C> The light-emitting device 550C comprises an electrode 551C, a layer 104C, and a unit 103C (see Figure 4). The light-emitting device 550C also has a layer 105C.

[0098] 《Example of Electrode 551C Configuration》 Electrode 551C is formed on the insulating layer 521. Electrode 551C is adjacent to electrode 551A, and electrode 551C is positioned with a structure 529 in between it and electrode 551A. For example, a material that can be used for electrode 551A can be used for electrode 551C.

[0099] Furthermore, a REFC layer can be placed between the electrode 551C and the insulating layer 521. For example, a material that can be used for the REFA layer can be used for the REFC layer.

[0100] 《Example of Electrode 552C Configuration》 Electrode 552C overlaps with electrode 551C. For example, materials that can be used for electrode 552A can be used for electrode 552C.

[0101] 《Example of the composition of layer 105C》 Layer 105C is sandwiched between electrode 552C and unit 103C, and layer 105C is in contact with electrode 552C. For example, the material that can be used for layer 105A can be used for layer 105C.

[0102] 《Example of Unit 103C Configuration》 Unit 103C includes the luminescent material EMC. The same material that can be used for the luminescent material EMA can also be used for the luminescent material EMC. For example, a material that emits light of a different hue from the color of light emitted by the luminescent material EMA and the color of light emitted by the luminescent material EMB can be used for the luminescent material EMC.

[0103] 《Example of Layer 104C Configuration》 Layer 104C is sandwiched between the electrode 551C and the unit 103C. Furthermore, layer 104C is positioned with a structure 529 in between it and layer 104A. For example, the same material that can be used for layer 104A can be used for layer 104C.

[0104] <Example of configuration of light-emitting device 550A 2> The light-emitting device 550A includes an electrode 551A, an electrode 552A, a layer 104A, a layer 105A, a unit 103A, a unit 103A2, and an intermediate layer 106A. The intermediate layer 106A also includes a layer 106A1, a layer 106A2, and a layer 106A3 (see Figure 5).

[0105] Note that the display device 700 described using Figure 5 differs from the display device 700 described using Figure 3 in the configuration of the light-emitting device 550A and the light-emitting device 550B. Here, the differences will be explained in detail, and for similar configurations, please refer to the explanation above.

[0106] 《Example of Unit 103A2 Configuration》 Unit 103A2 is sandwiched between electrode 552A and unit 103A, and unit 103A2 includes a luminescent material EMA2. For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence can be used as the luminescent material EMA2. For example, the luminescent material EMA can be used as the luminescent material EMA2. In addition, a material that emits light of the same color and hue as the light emitted by the luminescent material EMA can be used as the luminescent material EMA2. In addition, a material that emits light of a different color and hue from the light emitted by the luminescent material EMA can be used as the luminescent material EMA2.

[0107] Furthermore, a structure with multiple layers can be used in unit 103A2. For example, a configuration similar to that used in unit 103A can be used in unit 103A2.

[0108] 《Example of the configuration of the intermediate layer 106A》 The intermediate layer 106A is sandwiched between units 103A2 and 103A. Layer 106A1 is sandwiched between units 103A2 and 103A and is in contact with unit 103A2. Layer 106A3 is sandwiched between layer 106A1 and unit 103A and is in contact with layer 106A1. Layer 106A2 is sandwiched between layer 106A3 and unit 103A and is in contact with layer 106A3.

[0109] 《Example of the composition of layer 106A1》 Layer 106A1 contains a hole-transporting material HTM. For example, a hole-transporting material HTM that can be used in layer 104A can be used in layer 106A1.

[0110] Layer 106A1 comprises region 106A1(i) and region 106A1(o). Region 106A1(o) is located at the end of layer 106A1, and is located closer to the support portion 529Spt than region 106A1(i). Region 106A1(o) is also in contact with unit 103A2. In the description of the configuration example of the structure 529, which will be described later, an example of how to form region 106A1(i) and region 106A1(o) in layer 106A1 will be described in detail with reference to Figure 8.

[0111] Region 106A1(i) is in contact with unit 103A2 and overlaps with electrode 551A. Furthermore, region 106A1(i) contains the electron-accepting material AM at a higher concentration than region 106A1(o). For example, the electron-accepting material AM that can be used in layer 104A can be used in layer 106A1.

[0112] For example, when the square root of the electric field strength V / cm is 600, the hole mobility in the film state is 1 × 10⁻⁶. −３ Materials with a resistivity of cm / Vs or less can be used in region 106A1(i). Furthermore, if the electrical resistivity is 1 × 10⁻¹⁰ in film form, this material can be used in region 106A1(i). ４ Ω・cm or more 1×10 ７ A film with a resistivity of Ω·cm or less can be used in region 106A1(i). Preferably, the electrical resistivity of the film is 5 × 10⁻⁶ in its film state. ４ Ω・cm or more 1×10 ７ A film with a resistivity of Ω·cm or less can be used in region 106A1(i). More preferably, the electrical resistivity of the film is 1 × 10⁻⁶ in film form. ５ Ω・cm or more 1×10 ７ A film with a density of Ω·cm or less can be used in region 106A1(i).

[0113] Furthermore, using electron spin resonance spectroscopy in the film state, 1 × 10 １８ spins / cm ３Materials exhibiting the above spin densities can be used in region 106A1(i). This makes it easier to inject holes from the intermediate layer 106A, for example. Alternatively, it can reduce the driving voltage of the light-emitting device 550A.

[0114] <Example of configuration of light-emitting device 550B 2> The light-emitting device 550B comprises an electrode 551B, an electrode 552B, a layer 104B, a layer 105B, a unit 103B, a unit 103B2, and an intermediate layer 106B (see Figure 5).

[0115] 《Example of Unit 103B2 Configuration》 Unit 103B2 is sandwiched between electrode 552B and unit 103B, and unit 103B2 includes a luminescent material EMB2. For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence can be used as the luminescent material EMB2. For example, any material that can be used as the luminescent material EMB can be used as the luminescent material EMB2. In addition, a material that emits light of the same hue as the light emitted by the luminescent material EMB can be used as the luminescent material EMB2. In addition, a material that emits light of a different hue than the light emitted by the luminescent material EMB can be used as the luminescent material EMB2.

[0116] Furthermore, a structure with multiple layers can be used in unit 103B2. For example, a configuration similar to that used in unit 103B can be used in unit 103B2.

[0117] 《Example of the configuration of the intermediate layer 106B》 The intermediate layer 106B is sandwiched between units 103B2 and 103B. For example, the same configuration used for the intermediate layer 106A can be used for the intermediate layer 106B.

[0118] This allows the conductivity of region 106A1(o) to be lower than that of region 106A1(i). Furthermore, a region of low conductivity in layer 106A1 can be provided at the end of the light-emitting device 550A. In addition, even if the electrode 552A and layer 106A1 come into contact at the end of the light-emitting device 550A, the occurrence of current flowing between the electrode 552A and layer 106A1 can be suppressed. Furthermore, the occurrence of current flowing between the electrode 552A and electrode 551A through region 106A1(o) of layer 106A1 can be suppressed. Furthermore, the occurrence of current flowing between the electrode 552A and layer 106A1 without a predetermined current flowing through unit 103A2 can be suppressed. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0119] <Example of the configuration of structure 529 2> The awning portion 529Cnp has a shape that protrudes from the support portion 529Spt toward the light-emitting device 550A (see Figures 3 and 5). In a top view, the awning portion 529Cnp covers region 104A(o).

[0120] Furthermore, when evaporating the material from the deposition source to form a layer on the insulating layer 521, a shield of a predetermined shape can be placed between the deposition source and the insulating layer 521 to shield a portion of the material flying from the deposition source. This allows the shape of the layer to reflect the shape of the shield. In addition, the shape of the layer can be changed by controlling the direction of flight of the material flying from the deposition source.

[0121] For example, the shape of region 104A(i) and region 104A(o) of layer 104A can be controlled by controlling the shape of the structure 529 formed on the insulating layer 521 and the flight direction of the material flying from the deposition source (see Figure 7).

[0122] Specifically, region 104A(i) can be formed in the area reached by the hole-transporting material HTM flying from the deposition source EvS1 and the electron-accepting material AM flying from the deposition source EvS2. In addition, region 104A(o) can be formed in the area reached by the hole-transporting material HTM but not by the electron-accepting material AM.

[0123] Furthermore, by controlling the shape of the awning portion 529Cnp and the flight direction of the electron-accepting material AM flying from the deposition source EvS2, region 104A(o) can be formed closer to the support portion 529Spt than region 104A(i). In other words, by controlling the shape of the awning portion 529Cnp and the flight direction of the hole-transporting material HTM flying from the deposition source EvS1, region 104A(o) can be formed in the portion covered by the awning portion 529Cnp in a top view.

[0124] This allows the electron-accepting material AM to be shielded using the overhang portion 529Cnp when forming layer 104A. Furthermore, region 104A(o) can be formed in the position shaded by the overhang portion 529Cnp. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0125] Furthermore, if the light-emitting device 550A has an intermediate layer 106A, in a top view, the overhang portion 529Cnp covers region 106A1(o) (see Figures 5 and 8).

[0126] This allows the electron-accepting material AM to be shielded using the overhang portion 529Cnp when forming layer 106A1. Furthermore, region 106A1(o) can be formed in the position shaded by the overhang portion 529Cnp. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0127] <Example 3 of the structure 529 configuration> The structure 529 includes a base portion 529Bs (see Figures 3 and 5).

[0128] 《Example of the configuration of the base portion 529Bs》 The base portion 529Bs is sandwiched between the support portion 529Spt and the insulating layer 521, and the base portion 529Bs includes a portion that is sandwiched between the layer 104A and the electrode 551A. The base portion 529Bs also covers the end of the electrode 551A, and the base portion 529Bs includes a portion that is in contact with region 104A(o). The base portion 529Bs also provides insulation.

[0129] For example, insulating inorganic materials, insulating organic materials, or insulating composite materials containing inorganic and organic materials can be used for the base portion 529Bs.

[0130] Specifically, an inorganic oxide film, an inorganic nitride film, or an inorganic oxidnitride film, or a laminated material made by laminating a plurality of these, can be used for the base portion 529Bs.

[0131] For example, a film containing a silicon oxide film, silicon nitride film, silicon oxynitride film, aluminum oxide film, or a laminated material made by laminating a plurality of these can be used in the base portion 529Bs. Note that the silicon nitride film is a dense film and has excellent function in suppressing the diffusion of impurities.

[0132] For example, the base portion 529Bs can be made of a laminated or composite material of polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, or acrylic resin, or a combination of resins selected from these.

[0133] Alternatively, the base portion 529Bs may be formed using a photosensitive material. Specifically, a film formed using a photosensitive polyimide or a photosensitive acrylic resin can be used for the base portion 529Bs.

[0134] This makes it possible to suppress the phenomenon in which electrodes 552A and 551A come into contact at the end of the light-emitting device 550A. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0135] <Example of the configuration of the support portion 529Spt> The support portion 529Spt is conductive. The support portion 529Spt is also electrically connected to the electrode 552A (see Figures 3 and 5).

[0136] Specifically, metal elements selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the support portion 529Spt. Alternatively, alloys containing the above-mentioned metal elements can be used for the support portion 529Spt. In particular, an alloy of copper and manganese is suitable for microfabrication using the wet etching method.

[0137] In the cross-section shown in Figure 3, the support portion 529Spt can have the same thickness in the portion that connects to the overhang portion 529Cnp and in the portion that contacts the base portion 529Bs.

[0138] Furthermore, in the cross-section shown in Figure 9, the thickness t of the portion of the support part 529Spt that contacts the base part 529Bs is thicker than the portion of the support part 529Spt that connects to the overhang part 529Cnp. Also, the angle θ at which the side surface of the support part 529Spt intersects with the plane on which the insulating layer 521 extends is less than 90°. In other words, in the cross-section shown in Figure 9, the support part 529Spt has a forward taper shape. This prevents the phenomenon of the support part 529Spt falling off the base part 529Bs during the manufacturing process of the display device.

[0139] Furthermore, in the cross-section shown in Figure 10, the thickness t of the portion of the support part 529Spt that contacts the base part 529Bs is thinner than the portion of the support part 529Spt that connects to the overhang part 529Cnp. Also, the angle θ at which the side surface of the support part 529Spt intersects with the plane on which the insulating layer 521 extends is greater than 90°. In other words, in the cross-section shown in Figure 10, the support part 529Spt has an inverse taper shape. This allows the portion of the support part 529Spt that contacts the electrode 552A to be kept away from the layer 104A or unit 103A. In addition, it is possible to prevent the phenomenon of the portion of the support part 529Spt that contacts the electrode 552A being contaminated by the material used in the layer 104A or unit 103A. Furthermore, it is possible to make the electrical connection between the support part 529Spt and the electrode 552A more reliable.

[0140] Furthermore, in the cross-section shown in Figure 11, the side surface of the overhang portion 529Cnp is continuous with the side surface of the support portion 529Spt. In other words, in the cross-section shown in Figure 11, the side surface of the support portion 529Spt and the side surface of the overhang portion 529Cnp are continuous and both have an inverse taper shape. This allows the portion of the support portion 529Spt that contacts the electrode 552A to be kept away from the layer 104A or unit 103A. In addition, the material used for the layer 104A or unit 103A can prevent contamination of the portion of the support portion 529Spt that contacts the electrode 552A. Furthermore, the electrical connection between the support portion 529Spt and the electrode 552A can be made more reliable.

[0141] 《Example 2 of the configuration of the base portion 529Bs》 In the cross-sectional structure of the cutting line passing through points P0 and P1, the base portion 529Bs is provided with a groove 529Tch (see Figures 3 and 6). The groove 529Tch is located between the support portion 529Spt and the light-emitting device 550B.

[0142] This allows the support portion 529Spt to be used for wiring to supply a predetermined potential to the electrode 552A (see Figure 3). Furthermore, in the cross-sectional structure of the cutting line passing through points P0 and P1, the groove 529Tch can be used to keep the light-emitting device 550B away from the support portion 529Spt, preventing contact. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0143] Furthermore, in the cross-sectional structure along the cutting line passing through points P0 and P2, the base portion 529Bs is provided with grooves 529Tch between the light-emitting device 550A and the support portion 529Spt, and between the support portion 529Spt and the light-emitting device 550C (see Figures 4 and 6).

[0144] This allows for the formation of steps in the cross-sectional structure along the cutting line passing through points P0 and P2 using the groove 529Tch (see Figure 4). Furthermore, these steps allow for the formation of locally thin regions or discontinuous structures, for example, in layer 104A. Additionally, regions with locally high electrical resistance can be formed, for example, in layer 104A. Furthermore, these steps allow for the formation of locally thin regions or discontinuous structures, for example, in electrode 552A. Additionally, regions with locally high electrical resistance can be formed, for example, in electrode 552A. Moreover, in the cross-sectional structure along the cutting line passing through points P0 and P2, the occurrence of current flow between the support portion 529Spt and layer 104A can be suppressed. Furthermore, the occurrence of current flow between electrode 552A and layer 104A can be suppressed. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0145] <Example of the configuration of layer 529Ins> In addition, a display device 700 according to one aspect of the present invention is provided with layer 529Ins on the side surface of the structure 529 (see Figures 3 to 5). Layer 529Ins is formed on the base portion 529Bs along the groove 529Tch. Layer 529Ins is not formed on the base portion 529Bs where the groove 529Tch is not formed (see Figures 3 and 5).

[0146] Furthermore, layer 529Ins provides insulating properties. For example, it can be formed using the atomic layer deposition (ALD) method. Specifically, silicon oxide, silicon nitride, or aluminum oxide can be used for layer 529Ins.

[0147] This prevents connection between the electrode 552B and the support portion 529Spt in the portion where the groove 529Tch is formed. Furthermore, it prevents connection between the electrode 552C and the support portion 529Spt in the portion where the groove 529Tch is formed. Also, it prevents connection between the electrode 552A and the support portion 529Spt in the portion where the groove 529Tch is formed.

[0148] <Example of Display Device Configuration 3> The display device 700 described in this embodiment also includes an insulating layer 521, a light-emitting device 550A, a light-emitting device 550B, and a structure 529 (see Figure 12). The light-emitting device 550A is located on the insulating layer 521, and the light-emitting device 550B is located on the insulating layer 521 alongside the light-emitting device 550A.

[0149] The structure 529 comprises a support portion 529Spt and an overhang portion 529Cnp. The support portion 529Spt is located between the light-emitting devices 550A and 550B and is situated on the insulating layer 521. The overhang portion 529Cnp has a shape that protrudes from the support portion 529Spt toward the light-emitting device 550A.

[0150] The light-emitting device 550A includes an electrode 551A, an electrode 552A, a unit 103A, and a layer 105A. The light-emitting device 550A also has a layer 104A. The electrode 551A is located on the insulating layer 521, and the electrode 552A overlaps with the electrode 551A. The unit 103A is sandwiched between the electrodes 552A and 551A, and the unit 103A contains a light-emitting material EMA.

[0151] Layer 105A is sandwiched between unit 103A and electrode 551A, and layer 105A contains an electron-transporting material ETM. Layer 105A also comprises region 105A(i) and region 105A(o).

[0152] Region 105A(o) is located at the edge of layer 105A, and is closer to the support portion 529Spt than region 105A(i). Region 105A(o) is also in contact with unit 103A.

[0153] Region 105A(i) is in contact with unit 103A and electrode 551A, and region 105A(i) contains electron-donating material DM at a higher concentration than region 105A(o).

[0154] This allows the conductivity of region 105A(o) to be lower than that of region 105A(i). Furthermore, a region of low conductivity in layer 105A can be provided at the end of the light-emitting device 550A. In addition, even if the electrode 552A and layer 105A come into contact at the end of the light-emitting device 550A, the occurrence of current flowing between the electrode 552A and layer 105A can be suppressed. Furthermore, the occurrence of current flowing between the electrode 552A and electrode 551A through region 105A(o) of layer 105A can be suppressed. Furthermore, the occurrence of current flowing between the electrode 552A and electrode 551A without a predetermined current flowing through unit 103A can be suppressed. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0155] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0156] (Embodiment 2) In this embodiment, a method for manufacturing a display device according to one aspect of the present invention will be described with reference to Figures 13 to 28.

[0157] Figures 14 to 28 are cross-sectional views illustrating a method for manufacturing a display device according to one embodiment of the present invention.

[0158] <Example of a method for manufacturing the display device 700> The method for manufacturing the display device described in this embodiment has the following phases between the start (START) and the end (END) (see Figure 13).

[0159] Phase PH0: Phase PH0 is the phase in which the circuit board of the display device is formed.

[0160] In phase PH0, a functional layer 520 is formed on the substrate 510 (see Figure 14). The functional layer 520 includes an insulating layer 501 and an insulating layer 521. The functional layer 520 also includes, for example, a pixel circuit or a driving circuit between the insulating layer 501 and the insulating layer 521.

[0161] Phase PH1: Phase PH1 is the phase in which electrodes 551A, 551B, and structure 529 are formed (see Figures 14 to 20).

[0162] [Step S1 of Phase PH1] In step S1 of Phase PH1, layer REFA, layer REFB, electrode 551A, and electrode 551B are formed on the insulating layer 521. For example, using a sputtering method, films that will later become layer REFA and layer REFB are formed on the insulating layer 521, and films that will become electrodes 551A and electrode 551B are formed on top of them. Then, using a photolithography method, layer REFA, layer REFB, electrode 551A, and electrode 551B are formed (see Figure 14).

[0163] Specifically, a laminated film consisting of a titanium-containing film, an aluminum-containing film, and another titanium-containing film can be used for layer REFA and layer REFB. Furthermore, for example, a conductive metal oxide, specifically indium tin oxide (ITSO) containing silicon or silicon oxide, can be used for electrodes 551A and 551B.

[0164] [Step S2 of Phase PH1] In step S2 of Phase PH1, a base portion 529Bs is formed between electrode 551A and electrode 551B (see Figure 14). For example, a film that will later become the base portion 529Bs is formed on the insulating layer 521, electrode 551A, and electrode 551B using the CVD method. Then, a resist Res is formed, and the base portion 529Bs is formed between electrode 551A and electrode 551B using the photolithography method. The base portion 529Bs has multiple openings, one opening overlapping electrode 551A and the other openings overlapping electrode 551B.

[0165] Specifically, a film containing silicon oxide or the like can be used in the base portion 529Bs.

[0166] [Step S3 of Phase PH1] In step S3 of Phase PH1, grooves 529Tch are formed in the base portion 529Bs (see Figure 15). For example, resist Res is formed on the base portion 529Bs, and grooves 529Tch are formed in the base portion 529Bs using photolithography. Then, the resist Res is removed.

[0167] [Step S4 of Phase PH1] In step S4 of Phase PH1, the support portion 529Spt and the overhang portion 529Cnp are formed on the base portion 529Bs (see Figure 17). A sacrificial layer is formed on the base portion 529Bs, electrode 551A, and electrode 551B. For example, resist Res can be used as the sacrificial layer. Alternatively, for example, a film 529cnp is formed on the sacrificial layer using a sputtering method (see Figure 16). The film 529cnp is the film that will later become the support portion 529Spt and the overhang portion 529Cnp. After that, resist Res2 is formed, and the support portion 529Spt and the overhang portion 529Cnp are formed using a photolithography method (see Figure 17). After that, resist Res2 is removed.

[0168] Specifically, a photoresist can be used as resist Res2. Furthermore, titanium or aluminum can be used as the film 529cnp.

[0169] [Step S5 of Phase PH1] In step S5 of Phase PH1, layer 529Ins is formed on the surface of structure 529 along groove 529Tch (see Figures 18 to 20). For example, film 529ins is formed on the surface of base portion 529Bs, support portion 529Spt and overhang portion 529Cnp using the ALD method (see Figure 18). Film 529ins is the film that will later become layer 529Ins. Next, resist Res is formed along groove 529Tch, and layer 529Ins is formed using photolithography (see Figure 19). After that, resist Res is removed, and electrode 551A, electrode 551B and structure 529 are formed (see Figure 20).

[0170] Phase PH2A Phase PH2A is the phase in which the light-emitting device 550A and layer 573A are formed on the substrate on which the electrode 551A is formed (see Figures 21 to 24). In addition, a sacrificial layer can be formed in the area on which the light-emitting device 550A is not formed, for example, on the electrode 551B. Specifically, a resist Res can be used as the sacrificial layer. This protects the surface of the electrode 551B from various damages that occur during the manufacturing process.

[0171] [Step S1 of Phase PH2A] In step S1 of Phase PH2A, a film 104a is formed on the electrode 551A (see Figure 21). For example, the film 104a is formed using a co-evaporation method. The film 104a is a film that will later become layer 104A, and comprises region 104a(i) and region 104a(o). Region 104a(i) is a region that will later become region 104A(i), and region 104a(o) is a region that will later become region 104A(o).

[0172] For example, the shape of the structure 529 formed on the insulating layer 521 and the flight direction of the material flying from the deposition source are controlled to control the shape of region 104a(i) and region 104a(o) of the film 104a (see Figure 21).

[0173] Specifically, region 104a(i) is formed in the area reached by the hole-transporting material HTM flying from the deposition source EvS1 and the electron-accepting material AM flying from the deposition source EvS2. In addition, region 104a(o) is formed in the area reached by the hole-transporting material HTM but not by the electron-accepting material AM.

[0174] Furthermore, by controlling the shape of the awning portion 529Cnp and the flight direction of the electron-accepting material AM flying from the deposition source EvS2, region 104a(o) is formed closer to the support portion 529Spt than region 104a(i). In other words, by controlling the shape of the awning portion 529Cnp and the flight direction of the hole-transporting material HTM flying from the deposition source EvS1, region 104a(o) is formed in the portion covered by the awning portion 529Cnp in a top view.

[0175] [Step S2 of Phase PH2A] In step S2 of Phase PH2A, films 103a, 105a, and 552a are formed on film 104a, and film 573a is formed on film 552a (see Figure 22). For example, films 103a, 105a, and 552a are formed using a vapor deposition method or a co-vapor deposition method. Film 103a is the film that will later become unit 103A. Film 105a is the film that will later become layer 105A, and film 552a is the film that will later become electrode 552A.

[0176] For example, the shape of the film 103a and the shapes of films 105a and 552a are controlled by controlling the shape of the structure 529 formed on the insulating layer 521 and the flight direction of the material flying from the deposition source.

[0177] Specifically, film 103a is formed using a vapor deposition source that can launch the material in the same direction as the material launched from vapor deposition source EvS3, and the shape of the awning portion 529Cnp. Furthermore, film 105a and film 552a are formed using a vapor deposition source that can launch the material in the same direction as the material launched from vapor deposition source EvS4, and the shape of the awning portion 529Cnp.

[0178] Furthermore, for example, the film 573a is formed using the ALD method. Note that film 573a is the film that later becomes layer 573A. Specifically, silicon oxide, silicon nitride, or aluminum oxide can be used for film 573a.

[0179] [Step S3 of Phase PH2A] In step S3 of Phase PH2A, layer 104A, unit 103A, layer 105A, electrode 552A, and layer 573A are formed (see Figures 23 and 24). For example, a resist Res is formed on film 573a, and unwanted portions of film 573a are removed using photolithography (see Figure 23). Alternatively, unwanted portions of film 552a, film 105a, film 103a, film 104a, and film 573a are removed to form layer 104A, unit 103A, layer 105A, electrode 552A, and layer 573A. After that, the resist Res is removed to form the light-emitting device 550A and layer 573A (see Figure 24).

[0180] Phase PH2B Phase PH2B is the phase in which the light-emitting device 550B and layer 573B are formed on the substrate on which the light-emitting device 550A and electrode 551B are formed (see Figures 25 to 28). In addition, a sacrificial layer can be formed in the area on which the light-emitting device 550B is not formed, for example, on the light-emitting device 550A. Specifically, a resist Res can be used as the sacrificial layer. This protects the light-emitting device 550A from various damages that occur during the manufacturing process. In addition, by applying a method similar to that of Phase PH2B, the light-emitting device 550C and layer 573C can be formed on the substrate on which the light-emitting device 550A, light-emitting device 550B and electrode 551C are formed.

[0181] [Step S1 of Phase PH2B] In step S1 of Phase PH2B, film 104b is formed on electrode 551B (see Figure 25). For example, film 104b is formed using the same method as the method for forming film 104a. Film 104b is the film that will later become layer 104B (see Figure 25).

[0182] [Step S2 of Phase PH2B] In step S2 of Phase PH2B, films 103b, 105b, and 552b are formed on film 104b, and film 573b is formed on film 552b (see Figure 26). For example, films 103b, 105b, and 552b are formed using the same method as the method for forming films 103a, 105a, and 552a. Film 103b is the film that will later become unit 103B. Film 105b is the film that will later become layer 105B, and film 552b is the film that will later become electrode 552B.

[0183] Furthermore, for example, film 573b is formed using the same method as the method for forming film 573a. Film 573b is the film that will later become layer 573B. Specifically, silicon oxide, silicon nitride, or aluminum oxide can be used for film 573b.

[0184] [Step S3 of Phase PH2B] In step S3 of Phase PH2B, layer 104B, unit 103B, layer 105B, electrode 552B, and layer 573B are formed (see Figures 27 and 28). For example, a resist Res is formed on film 573b, and unwanted portions of film 573b are removed using photolithography (see Figure 27). Alternatively, unwanted portions of film 552b, film 105b, film 103b, film 104b, and film 573b are removed to form layer 104B, unit 103B, layer 105B, electrode 552B, and layer 573B. After that, the resist Res is removed to form the light-emitting device 550B and layer 573B (see Figure 28).

[0185] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0186] (Embodiment 3) In this embodiment, an example of the configuration of a display module and a display device that can be used as a display device according to one aspect of the present invention will be described with reference to Figures 29A to 39D.

[0187] Figure 29A is a perspective view illustrating a display module according to one embodiment of the present invention, and Figure 29B is a schematic diagram illustrating the configuration of the display module shown in Figure 29A.

[0188] Figure 30A is a perspective view illustrating a display module according to one embodiment of the present invention, and Figure 30B is a schematic diagram illustrating the configuration of the display module shown in Figure 30A.

[0189] Figure 31A is a block diagram illustrating a display module according to one embodiment of the present invention, and Figures 31B to 31E are schematic diagrams illustrating the configuration of the display module shown in Figure 31A.

[0190] Figure 32 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0191] Figure 33 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0192] Figure 34 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0193] Figure 35 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0194] Figure 36 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0195] Figure 37 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0196] Figure 38 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0197] Figures 39A to 39C are cross-sectional views illustrating the configuration of a transistor that can be used in a display device according to one embodiment of the present invention, and Figure 39D is a front view of the transistor shown in Figure 39C.

[0198] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for wristwatch-type and bracelet-type information terminals (wearable devices), as well as as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0199] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television equipment, desktop or notebook computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0200] <Example of Display Module 280 Configuration 1> The display module 280 includes a display device 700 and an FPC 290 (see Figure 29A). Note that, instead of the display device 700, for example, any of the display devices 700A to 700F2 described later can be used in the display module 280.

[0201] <Example of the configuration of the display device 700> The display device 700 has a substrate 291 and a substrate 292. The display device 700 has a display unit 281. The display unit 281 is an area for displaying an image. The display unit 281 also includes a pixel unit 284.

[0202] Figure 29B shows a perspective view illustrating part of the configuration of the display device 700. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291. A terminal section 285 is provided on the outside of the pixel section 284 on the substrate 291. A wiring section 286 is provided between the circuit section 282 and the terminal section 285. The wiring section 286 has multiple wires and connects the terminal section 285 and the circuit section 282. The display device 700 is connected to the FPC 290 at the terminal section 285.

[0203] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Figure 29B. The pixel 284a includes a plurality of subpixels. For example, the pixel 284a includes a subpixel equipped with a light-emitting device FP_406R, a subpixel equipped with a light-emitting device FP_406G, and a subpixel equipped with a light-emitting device FP_406B.

[0204] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0205] For example, the pixel circuit 283a can have a configuration that includes at least one selection transistor, one current control transistor (drive transistor), and a capacitor. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active-matrix type display device.

[0206] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it is also possible to have a configuration that has at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0207] The FPC 290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An integrated circuit (IC) can also be mounted on the FPC 290.

[0208] The display device 700 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are superimposed on the lower side of the pixel section 284, thereby making the aperture ratio (effective display area ratio) of the display section 281 extremely high. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, making the resolution of the display section 281 extremely high. For example, it is preferable that the pixels 284a are arranged in the display section 281 at a density of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, with a resolution of 20000 ppi or less, or 30000 ppi or less.

[0209] Because such a display device 700 has an extremely high-resolution display unit 281, it can be suitably used in VR devices such as HMDs or AR devices in the form of glasses. For example, even in a configuration where the display unit is magnified and viewed through lenses, individual pixels cannot be distinguished, thus providing a highly immersive display. Furthermore, it can be suitably used in electronic devices with relatively small display units, such as wearable electronic devices like watches.

[0210] <Example 2 of the display module 280 configuration> The display module 280 also includes a display device 700 and FPCs 290_1 to 290_4 (see Figure 30A). The display device 700 has a rectangular shape. FPCs 290_1 to 290_4 are connected to the four corners of the display device 700.

[0211] The display device 700 has a substrate 291 and a display unit 281 (see Figure 30B). The substrate 291 has a roughly rectangular shape. The outer shape of the display unit 281 is smaller than the outer shape of the display unit 281, and its four corners are rounded. Alternatively, the outer shape of the display unit 281 is smaller than the outer shape of the display unit 281, and it has an elliptical or circular shape.

[0212] For example, in a goggle-type or glasses-type display device, the area near the corners of the substrate 291 cannot be used for display. Therefore, the corners of the display unit 281 can be made more rounded than the corners of the substrate 291. Also, the distance from the outer shape of the substrate 291 to the outer shape of the display unit 281 can be made longer at the corners of the substrate 291 than at the edges. Furthermore, terminal units 285_1 to 285_4 can be placed in the area from the outer shape of the substrate 291 to the outer shape of the display unit 281. In addition, the utilization efficiency of the substrate 291 can be increased.

[0213] <Example of Display Device 700 Configuration 2> The display device 700 has a pixel array 74, a circuit 75, and a circuit 76 (see Figure 31A). The pixel array 74 has pixels 40 arranged in the column direction and row direction.

[0214] Pixel 40 may have multiple sub-pixels 71. The sub-pixels 71 have the function of emitting light for display. By assigning colors such as R (red), G (green), and B (blue) to the light emitted by the sub-pixels 71, full-color display can be achieved.

[0215] The sub-pixel 71 has a light-emitting device that emits unpolarized visible light. Preferably, an EL element such as an OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) is used as the light-emitting device. Examples of light-emitting materials for the EL element include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (such as quantum dot materials). In addition, LEDs such as microLEDs can be used as the light-emitting device.

[0216] Circuits 75 and 76 are driver circuits for driving the sub-pixels 71. Circuit 75 can function as a source driver circuit, and circuit 76 can function as a gate driver circuit. Circuits 75 and 76 can be, for example, shift register circuits.

[0217] Furthermore, the display device 700 can be divided into multiple areas vertically and horizontally, and each divided area can be driven separately.

[0218] For example, as shown in Figure 31B, circuits 75 and 76 can be separated and placed below the pixel array 74. In this case, the display device 700 has a stacked structure of layers 77 and 78, with multiple circuits 75 and 76 each provided on layer 77, and the pixel array 74 provided on layer 78 so as to overlap them.

[0219] By dividing and arranging circuits 75 and 76, the pixel array 74 can be driven in divided regions. For example, the pixel array 74 can be operated at partially different frame rates. The pixel array 74 can be displayed at partially different resolutions, and it can also be made compatible with foveal rendering.

[0220] Furthermore, by placing the driver circuit in the lower layer of the pixel array 74, the wiring length can be shortened and the wiring capacitance can be reduced. Therefore, a display device that can operate at high speed and with low power consumption can be made. In addition, the display device 700 can have a narrow bezel.

[0221] Note that the arrangement and area of ​​circuits 75 and 76 shown in Figure 31B are examples and can be changed as appropriate. Also, parts of circuits 75 and 76 can be formed on the same layer as the pixel array 74. Furthermore, memory circuits, arithmetic circuits, and communication circuits can be provided on layer 77.

[0222] This configuration, for example, involves providing layer 77 on a single-crystal silicon substrate, forming circuits 75 and 76 with transistors having silicon in the channel formation region (hereinafter referred to as Si transistors), and forming the pixel circuits of the pixel array 74 provided on layer 78 with transistors having oxide semiconductors in the channel formation region (hereinafter referred to as OS transistors). OS transistors can be formed using thin films and can be stacked on top of Si transistors.

[0223] The layer 79 on which the OS transistor is provided can be provided between layer 77 and layer 78 (see Figure 31C). Layer 79 can be provided with an OS transistor that forms part of the pixel circuit of the pixel array 74. Alternatively, it can be provided with an OS transistor that forms part of circuits 75 and 76. Alternatively, it can be provided with an OS transistor that forms part of circuits such as memory circuits, arithmetic circuits, and communication circuits that can be provided in layer 77.

[0224] Furthermore, the shape of the display device 700 in a top view is not limited to a rectangle; for example, it can be a circle or a polygon (see Figures 31D and 31E).

[0225] The display device of this embodiment is a high-definition display device and is particularly suitable for use in the display section of VR equipment such as head-mounted displays, and wearable devices that can be worn on the head, such as glasses-type AR equipment.

[0226] <Display device 700A> The display device 700A comprises layer FP, functional layer FL1, and functional layer FL2 (see Figure 32).

[0227] The layered FP comprises light-emitting devices FP_406R, FP_406G, and FP_406B. The layered FP also comprises a protective layer FP_421, a layer FP_422, and a substrate FP_130.

[0228] For example, the configuration of the light-emitting device described in Embodiment 1 can be applied to light-emitting devices FP_406R, FP_406G, and FP_406B.

[0229] The protective layer FP_421 covers the light-emitting devices FP_406R, FP_406G, and FP_406B, and the protective layer FP_421 has a single-layer structure or a multi-layer structure.

[0230] The protective layer FP_421 includes at least an inorganic insulating film. For example, oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon oxide nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film can be used for the protective layer FP_421. In addition, semiconductor materials or conductive materials such as indium gallium oxide, indium zinc oxide, indium tin oxide, and indium gallium zinc oxide can be used for the protective layer FP_421.

[0231] The substrate FP_130 covers the light-emitting devices FP_406R, FP_406G, and FP_406B. For example, glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc., can be used. The substrate that extracts light from the light-emitting devices uses a material that transmits the light. Furthermore, using a flexible material for the substrate FP_130 can increase the flexibility of the display device. A polarizing plate can also be used for the substrate FP_130.

[0232] Specifically, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc., can be used as the substrate FP_130.

[0233] Furthermore, films with high optical isotropy can be used as the substrate FP_130. For example, triacetylcellulose (TAC, also called cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film can be used as the substrate FP_130.

[0234] Layer FP_422 is sandwiched between substrate FP_130 and protective layer FP_421. Layer FP_422 has the function of bonding substrate FP_130 and protective layer FP_421 together.

[0235] For example, various types of curing adhesives, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives, can be used in layer FP_422. Specifically, epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins can be used in layer FP_422. Two-component mixed resins can also be used. Alternatively, adhesive sheets can be used. Materials with low moisture permeability, such as epoxy resins, are particularly preferred.

[0236] Functional layer FL1 comprises insulating layer FL1_210, conductive layer FL1_302, insulating layer FL1_204, conductive layer FL1_303, conductive layer FL1_306, insulating layer FL1_207a, insulating layer FL1_207b, conductive layer FL1_304, insulating layer FL1_207c, and conductive layer FL1_301.

[0237] The conductive layer FL1_302 is provided on the insulating layer FL1_210, with the insulating layer FL1_210 sandwiched between the conductive layer FL1_302 and the conductive layer FL2_301 of the functional layer FL2, which will be described later. The conductive layer FL1_302, the conductive layer FL2_301 of the functional layer FL2, which will be described later, and the insulating layer FL1_210 constitute the capacitance FL_408.

[0238] Furthermore, by using materials with low light transmittance for conductive layers FL1_302 and FL2_301, the amount of light incident on transistor FL2_401 of the functional layer FL2, which will be described later, can be suppressed. It is also more preferable that one or both of conductive layers FL2_301 and FL1_302 have a region that overlaps with transistor FL2_401 (particularly the channel formation region).

[0239] The insulating layer FL1_204 is provided on the conductive layer FL1_301. For example, one or more silicon oxide films, silicon oxide-nitride films, aluminum oxide films, silicon nitride films, and silicon nitride-oxide films can be used for the insulating layer FL1_204.

[0240] The conductive layer FL1_306 is provided on the insulating layer FL1_204. The conductive layer FL1_306 functions, for example, as wiring.

[0241] The conductive layer FL1_303 is embedded in the insulating layer FL1_204. The conductive layer FL1_303 functions as a plug, connecting the conductive layers FL1_306 and FL1_302.

[0242] The insulating layer FL1_207a is provided on the insulating layer FL1_204 and the conductive layer FL1_306.

[0243] The insulating layer FL1_207b is provided on the insulating layer FL1_207a. It is particularly preferable that the insulating layer FL1_207b has low transmittance of light with energy greater than or equal to the band gap of the semiconductor material of the semiconductor layer of the transistor provided in the functional layer FL2, i.e., light with a short wavelength. This effectively suppresses fluctuations in the electrical characteristics of the transistor and improves the reliability of the display device. For example, if the band gap of the semiconductor material of the semiconductor layer is 3.1 eV, it is particularly preferable that the insulating layer FL1_207b has low transmittance of light with energy of 3.1 eV or more (wavelength of approximately 400 nm or less). For example, red, green, brown, and black resins can be suitably used for the insulating layer FL1_207b because they have low transmittance of short-wavelength light.

[0244] The insulating layer FL1_207c is provided on the insulating layer FL1_207b.

[0245] The light-emitting device FP_406R is provided on the insulating layer FL1_207c.

[0246] Functional layer FL2 comprises a substrate FL2_110, an element isolation layer FL2_111, a transistor FL2_401, an insulating layer FL2_205, a conductive layer FL2_301, an insulating layer FL2_201, and a conductive layer FL2_303.

[0247] The conductive layer FL2_301 is embedded in the insulating layer FL2_201. Furthermore, both the conductive layer FL2_301 and the insulating layer FL2_201 are covered by the insulating layer FL1_210.

[0248] The transistor FL2_401 is a transistor having a channel formation region in the substrate FL2_110. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used as the substrate FL2_110. The substrate FL2_110 corresponds to the substrate 291 in Figures 29A and 29B.

[0249] The element isolation layer FL2_111 is located between two adjacent transistors FL2_401 and is embedded in the substrate FL2_110.

[0250] [Transistor FL2_401] Transistor FL2_401 has a portion of substrate FL2_110, a conductive layer 401_11, a low-resistance region 401_12, an insulating layer 401_13, and an insulating layer 401_14 (see Figure 39A). Conductive layer 401_11 functions as a gate electrode. Insulating layer 401_13 is located between substrate FL2_110 and conductive layer 401_11 and functions as a gate insulating layer. Low-resistance region 401_12 is a region of substrate FL2_110 doped with impurities and functions as either a source or a drain. Insulating layer 401_14 covers the side surface of conductive layer 401_11.

[0251] The insulating layer FL2_205 covers the transistor FL2_401.

[0252] The conductive layer FL2_303 is embedded in the insulating layer FL2_205 and functions as a plug. The conductive layer FL2_303 connects one of the source and drains of transistor FL2_401 to the conductive layer FL2_303. In other words, the conductive layer FL2_303 connects transistor FL2_401 to capacitor FL_408.

[0253] The transistor FL2_401 can, for example, be used to configure a pixel circuit.

[0254] <Display device 700B> The display device 700B comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 33). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0255] Furthermore, the display device 700B differs from the display device 700A in that it includes a functional layer FL3 and has a different configuration of the functional layer FL2. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0256] Functional layer FL2: The functional layer FL2 comprises a substrate FL2_110, a transistor FL2_401, and an element isolation layer FL2_111. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used for the substrate FL2_110.

[0257] Transistor FL2_401 is a transistor having a channel formation region on substrate FL2_110.

[0258] Furthermore, the functional layer FL2 comprises an insulating layer FL2_112, an insulating layer FL2_113, and a conductive layer FL2_312 on the side of the substrate FL2_110 where the functional layer FL3 is located. Additionally, the functional layer FL2 comprises a conductive layer FL2_305 and an insulating layer FL2_205c.

[0259] The insulating layer FL2_112 has the function of suppressing the diffusion of impurities that could impair the reliability of the transistor FL2_401 into the substrate FL2_110. For example, an inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL2_112.

[0260] The insulating layer FL2_113 is provided on the side of the insulating layer FL2_112 where the functional layer FL3 is located.

[0261] The conductive layer FL2_312 is provided so as to be embedded in the insulating layer FL2_113. Preferably, both the surface of the conductive layer FL2_312 that is in contact with the functional layer FL3 and the surface of the insulating layer FL2_113 that is in contact with the functional layer FL3 are flattened.

[0262] The conductive layer FL2_312 can be, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements. In particular, copper can be suitably used for the conductive layer FL2_312.

[0263] The conductive layer FL2_305 penetrates the substrate FL2_110 and the insulating layer FL2_112. Furthermore, the conductive layer FL2_305 is connected to the conductive layer FL2_312.

[0264] The insulating layer FL2_205c covers the sides of the conductive layer FL2_305. The insulating layer FL2_205c has the function of suppressing the diffusion of impurities that could impair the reliability of the transistor FL2_401 into the substrate FL2_110. For example, an inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL2_205c.

[0265] Functional layer FL3 comprises a substrate FL3_110, an element isolation layer FL3_111, a transistor FL3_401, a conductive layer FL3_303, an insulating layer FL3_205, and an insulating layer FL3_205b. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used as the substrate FL3_110.

[0266] Transistor FL3_401 is a transistor having a channel formation region on substrate FL3_110.

[0267] Furthermore, the functional layer FL3 comprises an insulating layer FL3_205b, an insulating layer FL3_201, and a conductive layer FL3_311 on the side of the insulating layer FL3_205 where the functional layer FL2 is located, and the functional layer FL3 is bonded to the functional layer FL2.

[0268] The insulating layer FL3_205b has the function of suppressing the diffusion of impurities that could impair the reliability of the transistor FL3_401 into the substrate FL3_110. For example, an inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL3_205b.

[0269] The insulating layer FL3_201 is provided on the side where the functional layer FL2 of the insulating layer FL3_205b is located.

[0270] The conductive layer FL3_311 is provided so as to be embedded in the insulating layer FL3_201. Preferably, both the surface of the conductive layer FL3_311 that is in contact with the functional layer FL2 and the surface of the insulating layer FL3_201 that is in contact with the functional layer FL2 are flattened.

[0271] By improving the flatness of the surface formed by the conductive layer FL3_311 and the insulating layer FL3_201, and the flatness of the surface formed by the conductive layer FL2_312 and the insulating layer FL2_113, the conductive layer FL3_311 and the conductive layer FL2_312 can be bonded together well.

[0272] It is preferable that the conductive layer FL2_312 uses the same conductive material as the conductive layer FL3_311. In particular, it is preferable to use copper for both the conductive layer FL3_311 and the conductive layer FL2_312. This allows the application of Cu-Cu direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other). The conductive layer FL2_312 is bonded to the conductive layer FL3_311, and the functional layers FL2 and FL3 are connected.

[0273] <Display device 700C> The display device 700C comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 34). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0274] Note that the display device 700C differs from the display device 700B in that the functional layer FL2 does not have an insulating layer FL2_113, the functional layer FL3 does not have an insulating layer FL3_201, the conductive layer FL3_311 and the conductive layer FL2_312 are connected using a bump FL_411, and the functional layer FL2 and the functional layer FL3 are bonded together using an adhesive layer FL_412. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0275] Bump FL_411 is sandwiched between conductive layers FL3_311 and FL2_312. For example, conductive materials including gold (Au), nickel (Ni), indium (In), and tin (Sn) can be used for bump FL_411. Alternatively, solder can be used for bump FL_411.

[0276] The adhesive layer FL_412 is sandwiched between the functional layers FL2 and FL3. The adhesive layer FL_412 has the function of bonding the functional layers FL2 and FL3 together.

[0277] <Display device 700D> The display device 700D comprises layer FP, functional layer FL1, and functional layer FL2 (see Figure 35).

[0278] Note that the display device 700D differs from the display device 700A in that the configuration of the functional layer FL2 is different. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0279] Functional layer FL2 consists of substrate FL2_120, insulating layer FL2_202a, insulating layer FL2_202b, transistor FL2_402, insulating layer FL2_208, insulating layer FL2_203a, insulating layer FL2_203b, and insulating layer FL2_204.

[0280] An insulating substrate or a semiconductor substrate can be used as the substrate FL2_120. Note that substrate FL2_120 corresponds to substrate 291 in Figures 29A and 29B.

[0281] The insulating layer FL2_202a is provided on the substrate FL2_120. The insulating layer FL2_202a has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of transistor FL2_402 into transistor FL2_402. In addition, the insulating layer FL2_202a functions as a barrier layer that prevents oxygen from being detached from semiconductor layer 402_21 to insulating layer FL2_202a. For example, a film that is less resistant to hydrogen or oxygen diffusion than a silicon oxide film can be used for the insulating layer FL2_202a. Specifically, aluminum oxide films, hafnium oxide films, silicon nitride films, etc., can be used for the insulating layer FL2_202a.

[0282] [Transistor FL2_402] Transistor FL2_402 has a semiconductor layer 402_21, an insulating layer 402_23, a conductive layer 402_24, a pair of conductive layers 402_25, an insulating layer FL2_202b, and a conductive layer 402_27 (see Figure 39B). Transistor FL2_402 is an OS transistor in which an oxide semiconductor is applied to the semiconductor layer where the channel is formed.

[0283] The conductive layer 402_27 is provided on the insulating layer FL2_202a. The conductive layer 402_27 functions as the first gate electrode of the transistor FL2_402.

[0284] The insulating layer FL2_202b covers the conductive layer 402_27. Furthermore, the upper surface of the insulating layer FL2_202b is preferably flattened. It is preferable to use an oxide insulating film, such as a silicon oxide film, in at least the portion of the insulating layer FL2_202b that is in contact with the semiconductor layer 402_21. A portion of the insulating layer FL2_202b functions as the first gate insulating layer.

[0285] The semiconductor layer 402_21 is provided on the insulating layer FL2_202b. For example, an oxide semiconductor film can be used for the semiconductor layer 402_21.

[0286] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited, and any amorphous semiconductor, single-crystal semiconductor, or semiconductor having crystalline properties other than single crystal (microcrystalline semiconductor, polycrystalline semiconductor, or semiconductor having a crystalline region in part) may be used. Using a single-crystal semiconductor or a semiconductor having crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0287] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced.

[0288] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0289] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0290] Examples of metal oxides that can be used in semiconductor layers include indium oxide, gallium oxide, and zinc oxide. Furthermore, it is preferable that the metal oxide contains two or three elements selected from indium, element M, and zinc. Element M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, it is preferable that element M is one or more elements selected from aluminum, gallium, yttrium, and tin.

[0291] Furthermore, when using a metal oxide for the semiconductor layer, it is preferable to form the metal oxide using either the sputtering method or the ALD method. When forming the metal oxide using the sputtering method, productivity can be increased and film density can be improved. When forming the metal oxide using the ALD method, the film coverage can be improved.

[0292] In particular, it is preferable to use an oxide containing indium, gallium, and zinc (also referred to as IGZO) as the metal oxide used in the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO®). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, aluminum, and zinc (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium, aluminum, gallium, and zinc (also referred to as IAGZO).

[0293] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Examples of such atomic ratios of metal elements in an In-M-Zn oxide include: In:M:Zn = 1:1:1 or near that composition, In:M:Zn = 1:1:1.2 or near that composition, In:M:Zn = 1:3:2 or near that composition, In:M:Zn = 1:3:4 or near that composition, In:M:Zn = 2:1:3 or near that composition, In:M:Zn = 3:1:2 or near that composition, In:M:Zn = 4:2: Compositions include 3 or near 3, In:M:Zn = 4:2:4.1 or near 4, In:M:Zn = 5:1:3 or near 5, In:M:Zn = 5:1:6 or near 5, In:M:Zn = 5:1:7 or near 5, In:M:Zn = 5:1:8 or near 5, In:M:Zn = 6:1:6 or near 6, and In:M:Zn = 5:2:5 or near 5. Note that "near 5" means within a range of ±30% of the desired atomic ratio.

[0294] Furthermore, it is preferable to use gallium or tin as element M. Note that multiple elements mentioned above may be combined as element M. Also, it is preferable to use In:M:Zn = 40:1:10 and a nearby metal oxide for the semiconductor layer. Specifically, In:Sn:Zn = 40:1:10 and a nearby metal oxide can be suitably used.

[0295] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar composition, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar composition, it includes cases where, when In is set to 5, Ga is greater than 0.5 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar composition, it includes cases where, when In is set to 1, Ga is greater than 0.5 and 2 or less, and Zn is greater than 0.5 and 2 or less.

[0296] Furthermore, the semiconductor layer may have two or more metal oxide layers with different compositions. For example, a laminated structure can be suitably used in which a first metal oxide layer has a composition of In:M:Zn = 1:3:4 [atomic ratio] or close to that, and a second metal oxide layer provided on the first metal oxide layer has a composition of In:M:Zn = 1:1:1 [atomic ratio] or close to that. In addition, it is particularly preferable to use gallium or aluminum as element M.

[0297] Alternatively, a laminated structure may be used, for example, of one selected from indium oxide, indium gallium oxide, and IGZO, and one selected from IAZO, IAGZO, and ITZO (registered trademark).

[0298] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0299] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (also called off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display panels.

[0300] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied to the source-drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0301] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit a smaller change in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby allowing control of the current flowing to the light-emitting device. This allows for an increase in the number of grayscale levels in the pixel circuit.

[0302] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, a stable current can be supplied to the light-emitting device even if there are variations in the current-voltage characteristics of the EL device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0303] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "reduced power consumption," "increased luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0304] A pair of conductive layers 402_25 are provided in contact with the semiconductor layer 402_21 and function as source electrodes and drain electrodes.

[0305] The insulating layer FL2_208 covers the top and side surfaces of the pair of conductive layers 402_25, as well as the side surfaces of the semiconductor layer 402_21. The insulating layer FL2_208 has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of the transistor FL2_402 into the transistor FL2_402. In addition, the insulating layer FL2_208 functions as a barrier layer that prevents the desorption of oxygen from the semiconductor layer 402_21 to the insulating layer FL2_208. For example, a film that is less resistant to hydrogen or oxygen diffusion than a silicon oxide film can be used for the insulating layer FL2_208. Furthermore, an insulating film similar to the insulating layer FL2_202a can be used for the insulating layer FL2_208.

[0306] The insulating layer FL2_203a is provided on the insulating layer FL2_208. Furthermore, both the insulating layer FL2_203a and the insulating layer FL2_208 have openings that reach the semiconductor layer 402_21. The insulating layer FL2_203a functions as an interlayer insulating layer.

[0307] The insulating layer 402_23 is in contact with the side surface of the insulating layer FL2_208, the side surface of the insulating layer FL2_203a, the side surface of the conductive layer 402_25, and the upper surface of the semiconductor layer 402_21 on the inside of the opening. The insulating layer 402_23 functions as a second gate insulating layer.

[0308] The conductive layer 402_24 is in contact with the insulating layer 402_23 and is embedded inside the opening. The conductive layer 402_24 functions as a second gate electrode. The upper surface of the conductive layer 402_24 forms a surface that is substantially the same as the upper end of the insulating layer 402_23 and the upper surface of the insulating layer FL2_203a.

[0309] The insulating layer FL2_203b covers the upper surface of the conductive layer 402_24, the upper end of the insulating layer 402_23, and the upper surface of the insulating layer FL2_203a. The insulating layer FL2_203b has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of the transistor FL2_402 into the transistor FL2_402. Note that an insulating film similar to that of the insulating layer FL2_202a can be used for the insulating layer FL2_203b.

[0310] The insulating layer FL2_204 covers the insulating layer FL2_203b. The insulating layer FL2_204 functions as an interlayer insulating layer.

[0311] Furthermore, the functional layer FL2 includes a conductive layer FL2_303. The conductive layer FL2_303 is embedded in the insulating layers FL2_203a, FL2_203b, and FL2_204. The conductive layer FL2_303 connects one of the pair of conductive layers 402_25 to the conductive layer FL2_301. In other words, the conductive layer FL2_303 connects the transistor FL2_402 to the capacitor FL2_408.

[0312] The transistor FL2_402 can, for example, be used to configure a pixel circuit.

[0313] The conductive layer FL2_303 comprises conductive layer FL2_303a and conductive layer FL2_303b. Conductive layer FL2_303a covers the sides of the openings in the insulating layers FL2_204, FL2_203b, FL2_203a, and FL2_208, and a portion of the upper surface of conductive layer 402_25. Conductive layer FL2_303b is in contact with the upper surface of conductive layer FL2_303a. Conductive material that does not readily allow hydrogen and oxygen to diffuse can be suitably used for conductive layer FL2_303a.

[0314] <Display device 700E> The display device 700E comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 36). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0315] The display device 700E differs from the display device 700D in that the functional layer FL2 is replaced by a functional layer FL3 instead of the substrate FL2_120. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0316] In this embodiment, a configuration in which both stacked layers comprise transistors having oxide semiconductors is illustrated, but the invention is not limited to this configuration. For example, a configuration in which all three stacked layers comprise transistors having oxide semiconductors is also possible.

[0317] Functional layer FL2: Functional layer FL2 is formed on the insulating layer FL3_206 of functional layer FL3, which will be described later. In addition, insulating layer FL2_202a covers insulating layer FL3_206, which will be described later.

[0318] Functional layer FL3 comprises substrate FL3_120, insulating layer FL3_202a, insulating layer FL3_202b, transistor FL3_402, insulating layer FL3_208, insulating layer FL3_203a, insulating layer FL3_203b, insulating layer FL3_204, conductive layer FL3_303, and insulating layer FL3_206. The conductive layer FL3_303 also comprises conductive layer FL3_303a and conductive layer FL3_303b.

[0319] For example, a configuration similar to that of functional layer FL2 can be used for functional layer FL3. Furthermore, a configuration similar to that of transistor FL2_402 can be applied to transistor FL3_402.

[0320] <Display device 700F1> The display device 700F1 comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 37). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0321] The display device 700F1 differs from the display device 700E in that the functional layer FL3 includes a transistor having a channel-forming region in the substrate FL3_110, instead of a transistor containing an oxide semiconductor in the semiconductor layer where the channel is formed. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0322] 《Functional Layer FL3》 The functional layer FL3 comprises a substrate FL3_110, an element isolation layer FL3_111, a transistor FL3_401, a conductive layer FL3_303, and an insulating layer FL3_205. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used for the substrate FL3_110. For a description of these components, please refer to the description of the functional layer FL3 of the display device 700B.

[0323] Furthermore, the functional layer FL3 comprises a conductive layer FL3_307, an insulating layer FL3_207, and a conductive layer FL3_308.

[0324] The conductive layer FL3_307 is provided on the insulating layer FL3_205 and functions as wiring.

[0325] The insulating layer FL3_207 covers the conductive layer FL3_307.

[0326] The conductive layer FL3_308 is provided on the insulating layer FL3_207 and functions as wiring.

[0327] The transistor FL3_401 in the functional layer FL3 can, for example, constitute a pixel circuit or a drive circuit (gate line drive circuit, source line drive circuit) for driving said pixel circuit.

[0328] Furthermore, the transistor FL3_401 in the functional layer FL3 and the transistor FL2_402 in the functional layer FL2 can constitute various circuits such as arithmetic circuits or memory circuits.

[0329] This configuration allows for the formation of not only pixel circuits but also drive circuits and other components directly beneath the light-emitting device. Furthermore, it enables the miniaturization of the display device compared to cases where the drive circuits are located around the display area.

[0330] <Display device 700F2> The display device 700F2 comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 38). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0331] The transistor configuration of the functional layer FL2 of the display device 700F2 differs from that of the display device 700F1. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0332] Functional layer FL2: Functional layer FL2 comprises insulating layer FL2_202a, insulating layer FL2_209, transistor FL2_403, insulating layer FL2_203a, insulating layer FL2_203b, and insulating layer FL2_204. Insulating layer FL3_206 covers functional layer FL3. In addition, insulating layer FL2_202a covers insulating layer FL3_206.

[0333] [Transistor FL2_403] Transistor FL2_403 has a conductive layer 403_25a, an insulating layer FL2_209, a conductive layer 403_25b, a semiconductor layer 403_21, an insulating layer FL2_202b, and a conductive layer 403_27 (see Figure 39C). Note that in transistor FL2_403, the source electrode and drain electrode are located at different heights with respect to the surface to be formed (here, the upper surface of the insulating layer FL2_202a), and the drain current flows perpendicular to, or approximately perpendicular to, the upper surface of the insulating layer FL2_202a. That is, the channel length direction can be said to have a component in the height direction (vertical direction). Note that transistor FL2_403 can be called a VFET (Vertical Field Effect Transistor), vertical transistor, vertical channel transistor, or vertical channel type transistor.

[0334] The channel length L of transistor FL2_403 can be controlled by the thickness of the insulating layer (here, insulating layer FL2_209) sandwiched between the source electrode and the drain electrode. In Figure 39C, the channel length L of transistor FL2_403 is indicated by a double arrow. Therefore, transistor FL2_403 with a channel length L shorter than the minimum exposure dimension of the exposure apparatus used to fabricate the transistor (for example, 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less, and 1 nm or more, or 5 nm or more) can be fabricated with high precision. By shortening the channel length L of transistor FL2_403, the on-current can be increased. This makes it possible to create a display device that operates at high speed.

[0335] The transistor FL2_403 can have its source electrode, semiconductor layer, and drain electrode stacked on top of each other. Therefore, compared to a so-called planar transistor in which these are arranged in a planar configuration, the occupied area can be significantly reduced. By applying a VFET to the pixel circuit of a display device, the occupied area of ​​the pixel circuit can be reduced, resulting in a high-definition display device.

[0336] As shown in Figure 39D, by forming the opening FL2_490 so that it is circular or roughly circular in a top view, the semiconductor layer 403_21, the insulating layer FL2_202b, and the conductive layer 403_27 are arranged concentrically. As a result, the distance between the conductive layer 403_27 and the semiconductor layer 403_21 becomes roughly uniform, so that the gate electric field can be applied to the semiconductor layer 403_21 roughly uniformly.

[0337] The side surface of the conductive layer 403_27 faces the side surface of the semiconductor layer 403_21 via the insulating layer FL2_202b. In other words, in a top view, the entire perimeter of the semiconductor layer 403_21 becomes the channel formation region. In this case, for example, the channel width W of the transistor FL2_403 is determined by the length of the outer perimeter of the semiconductor layer 403_21. That is, the channel width W of the transistor FL2_403 can be said to be determined by the size of the maximum width (or diameter if the opening FL2_490 is circular in a top view) of the aperture FL2_490. Figure 39D shows the maximum width D of the aperture FL2_490 with a solid double arrow. Figure 39D shows the channel width W of the transistor FL2_403 with a solid double arrow. By increasing the size of the maximum width D of the aperture FL2_490, the channel width per unit area can be increased, and the on-current can be increased.

[0338] When forming the aperture FL2_490 using photolithography, the maximum width D of the aperture FL2_490 is greater than or equal to the minimum exposure dimension of the exposure apparatus. Furthermore, the maximum width D of the aperture FL2_490 is determined by the film thickness of the semiconductor layer 403_21, the insulating layer FL2_202b, and the conductive layer 403_27 provided in the aperture FL2_490. The maximum width D of the aperture FL2_490 is, for example, 5 nm or more, 10 nm or more, or 20 nm or more, and preferably 100 nm or less, 60 nm or less, 50 nm or less, 40 nm or less, or 30 nm or less. Note that if the aperture FL2_490 is circular in a top view, the maximum width D of the aperture FL2_490 corresponds to the diameter of the aperture FL2_490, and the channel width W can be calculated as "D × π".

[0339] The configuration of the transistor FL2_403 shown here can also be applied to other configuration examples.

[0340] The conductive layer 403_25a is provided on the insulating layer FL2_202a. The conductive layer 403_25a functions as either the source electrode or the drain electrode.

[0341] The insulating layer FL2_209 is provided on the insulating layer FL2_202a and the conductive layer 403_25a. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidized nitride insulating films, and nitride oxide insulating films can be used for the insulating layer FL2_209. Specifically, one or more silicon oxide films, silicon oxidized nitride films, aluminum oxide films, silicon nitride films, and silicon nitride oxide films can be used for the insulating layer FL2_209.

[0342] The conductive layer 403_25b is provided on the insulating layer FL2_209. Furthermore, the conductive layer 403_25b and the insulating layer FL2_209 are provided with an opening FL2_490 that reaches the conductive layer 403_25a. The conductive layer 403_25b functions as the other of the source electrode and drain electrode.

[0343] The semiconductor layer 403_21 is in contact with the side surface of the insulating layer FL2_209, the side surface of the conductive layer 403_25b, and the upper surface of the conductive layer 403_25a inside the opening FL2_490. The region of the semiconductor layer 403_21 in contact with the conductive layer 403_25a functions as either a source region or a drain region, while the region in contact with the conductive layer 403_25b functions as the other of a source region or a drain region. In the semiconductor layer 403_21, the channel-forming region is located between the source region and the drain region. For example, an oxide semiconductor film can be used for the semiconductor layer 403_21.

[0344] The insulating layer FL2_202b is provided on the semiconductor layer 403_21. The insulating layer FL2_202b functions as a gate insulating layer.

[0345] The conductive layer 403_27 is in contact with the insulating layer FL2_202b and has a region that overlaps with the semiconductor layer 403_21. At least a portion of the conductive layer 403_27 is embedded inside the opening FL2_490. The conductive layer 403_27 functions as a gate electrode.

[0346] The insulating layer FL2_203a is provided on the insulating layer FL2_202b. The insulating layer FL2_203a functions as an interlayer insulating layer.

[0347] The insulating layer FL2_203b covers the upper surface of the conductive layer 403_27 and the upper surface of the insulating layer FL2_203a. The insulating layer FL2_203b has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of transistor FL2_403 into transistor FL2_403. Note that an insulating film similar to that of the insulating layer FL2_202a can be used for the insulating layer FL2_203b.

[0348] The insulating layer FL2_204 covers the insulating layer FL2_203b. The insulating layer FL2_204 functions as an interlayer insulating layer.

[0349] Furthermore, the functional layer FL2 includes a conductive layer FL2_303. The conductive layer FL2_303 is embedded in the insulating layers FL2_203a, FL2_203b, and FL2_204. The conductive layer FL2_303 connects the conductive layer 403_25b and the conductive layer FL2_301 (see Figure 38). In other words, the conductive layer FL2_303 connects the transistor FL2_403 to the capacitor FL2_408.

[0350] For example, a pixel circuit can be constructed using the transistor FL2_403.

[0351] The conductive layer FL2_303 comprises conductive layer FL2_303a and conductive layer FL2_303b. Conductive layer FL2_303a covers the sides of the openings of insulating layers FL2_204, FL2_203b, FL2_203a, and FL2_208, and a portion of the upper surface of conductive layer 403_25b. Conductive layer FL2_303b is in contact with the upper surface of conductive layer FL2_303a. Conductive material that does not readily allow hydrogen and oxygen to diffuse can be suitably used for conductive layer FL2_303a.

[0352] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0353] (Embodiment 4) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 40A to 42G.

[0354] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0355] Examples of electronic devices include television sets, desktop or notebook computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0356] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0357] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth. Furthermore, there are no particular limitations on the aspect ratio of the display device according to one embodiment of the present invention. For example, the display device can support various aspect ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0358] The electronic device of this embodiment may also be configured to include sensors (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0359] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0360] Figures 40A to 40D illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0361] The electronic device 8700A shown in Figure 40A and the electronic device 8700B shown in Figure 40B each include a pair of display panels 8751, a pair of housings 8721, a communication unit (not shown), a pair of mounting units 8723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 8753, a frame 8757, and a pair of nose pads 8758. Note that the display panel 8751 is omitted in Figure 40B.

[0362] A display device according to one embodiment of the present invention can be applied to the display panel 8751. Therefore, an electronic device capable of displaying extremely high resolution can be created.

[0363] Electronic devices 8700A and 8700B can each project an image displayed on a display panel 8751 onto the display area 8756 of an optical element 8753. Because the optical element 8753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 8753. Therefore, electronic devices 8700A and 8700B are electronic devices capable of AR display.

[0364] Electronic devices 8700A and 8700B can be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 8700A and 8700B can each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 8756.

[0365] The communications unit has a wireless communication device, which can supply video signals and other signals. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, a connector may be provided to which a cable for supplying video signals and power potential can be connected.

[0366] Electronic devices 8700A and 8700B are equipped with batteries (not shown) that can be charged wirelessly, wired, or both.

[0367] A touch sensor module can be installed in the housing 8721. The touch sensor module has the function of detecting when the outer surface of the housing 8721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by installing a touch sensor module in each of the two housings 8721, the range of operations can be expanded.

[0368] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0369] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving device. The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0370] The electronic device 8800A shown in Figure 40C and the electronic device 8800B shown in Figure 40D each include a pair of display units 8820, a housing 8821, a communication unit 8822, a pair of mounting units 8823, a control unit 8824, a pair of imaging units 8825, and a pair of lenses 8832. Note that the display unit 8820, communication unit 8822, and imaging unit 8825 are omitted in Figure 40D.

[0371] A display device according to one embodiment of the present invention can be applied to the display unit 8820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0372] The display unit 8820 is located inside the housing 8821 in a position where it can be seen through the lens 8832. Furthermore, by displaying different images on a pair of display units 8820, a three-dimensional display using parallax can also be performed.

[0373] Electronic devices 8800A and 8800B can each be described as electronic devices for VR. A user wearing either electronic device 8800A or electronic device 8800B can view the image displayed on the display unit 8820 through the lens 8832.

[0374] It is preferable that electronic devices 8800A and 8800B each have a mechanism that allows adjustment of the left and right positions of the lens 8832 and the display unit 8820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 8832 and the display unit 8820.

[0375] The attachment portion 8823 allows the user to attach the electronic device 8800A or 8800B to their head. While the attachment portion 8823 is exemplified as having a shape similar to the temples of eyeglasses in Figure 40C and other figures, it is not limited to this. The attachment portion 8823 only needs to be wearable by the user; for example, it can be in the shape of a helmet or a band.

[0376] The imaging unit 8825 has the function of acquiring external information. The data acquired by the imaging unit 8825 can be output to the display unit 8820. An image sensor can be used in the imaging unit 8825. In addition, multiple cameras can be provided to support multiple angles of view, such as telephoto and wide-angle.

[0377] Although an example with an imaging unit 8825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 8825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0378] The electronic device 8800A may also have a vibration mechanism that functions as bone conduction earphones. For example, the configuration having this vibration mechanism can be applied to one or more of the display unit 8820, the housing 8821, and the mounting unit 8823. This allows users to enjoy video and audio simply by wearing the electronic device 8800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0379] Electronic devices 8800A and 8800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0380] An electronic device according to one aspect of the present invention may also have a function for wireless communication with an earphone 8750. The earphone 8750 has a communication unit (not shown) and has a wireless communication function. The earphone 8750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 8700A shown in Figure 40A has a function for transmitting information to the earphone 8750 through its wireless communication function. Also, for example, the electronic device 8800A shown in Figure 40C has a function for transmitting information to the earphone 8750 through its wireless communication function.

[0381] The electronic device can be configured to include an earphone section. The electronic device 8700B shown in Figure 40B has an earphone section 8727. For example, the earphone section 8727 and the control unit can be connected to each other by a wire. Some of the wiring connecting the earphone section 8727 and the control unit may be located inside the housing 8721 or the mounting section 8723.

[0382] Similarly, the electronic device 8800B shown in Figure 40D has an earphone unit 8827. For example, the earphone unit 8827 and the control unit 8824 can be connected to each other by wire. Part of the wiring connecting the earphone unit 8827 and the control unit 8824 may be located inside the housing 8821 or the mounting unit 8823. Also, the earphone unit 8827 and the mounting unit 8823 may have magnets. This allows the earphone unit 8827 to be fixed to the mounting unit 8823 by magnetic force, which is preferable as it facilitates storage.

[0383] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a sound-collecting device such as a microphone can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0384] Thus, in one embodiment of the present invention, the electronic device is preferably of the glasses type (electronic device 8700A, electronic device 8700B, etc.) or the goggle type (electronic device 8800A, electronic device 8800B, etc.).

[0385] An electronic device according to one aspect of the present invention can transmit information to earphones by wire or wireless means.

[0386] The electronic device 6500 shown in Figure 41A is a portable information terminal that can be used as a smartphone.

[0387] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0388] A display device according to one embodiment of the present invention can be applied to the display unit 6502.

[0389] Figure 41B is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.

[0390] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0391] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0392] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0393] A display device according to one embodiment of the present invention can be applied to the display panel 6511. In particular, by using a resin film for the substrate of the display panel 6511, an extremely lightweight electronic device can be realized. Furthermore, because the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel section, an electronic device with a narrow bezel can be realized.

[0394] Figure 41C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown to be supported by a stand 7103.

[0395] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0396] The television device 7100 shown in Figure 41C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0397] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0398] Figure 41D shows an example of a notebook computer. The computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0399] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0400] Figures 41E and 41F show examples of digital signage.

[0401] The digital signage 7300 shown in Figure 41E includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0402] Figure 41F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0403] In Figures 41E and 41F, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0404] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0405] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0406] As shown in Figures 41E and 41F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0407] The digital signage 7300 or digital signage 7400 can also be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0408] The electronic device shown in Figures 42A to 42G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, a sensor 9007 (including a function to detect, detect, or measure force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, and the like.

[0409] In Figures 42A to 42G, a display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0410] The electronic devices shown in Figures 42A to 42G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0411] Details of the electronic equipment shown in Figures 42A to 42G will be explained below.

[0412] Figure 42A is a perspective view showing a personal digital information terminal (PDI) 9101. The PDI 9101 can be used, for example, as a smartphone. The PDI 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDI 9101 can also display text and image information on multiple surfaces. Figure 42A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, and phone calls, the subject of an email or SNS message, the sender's name, date and time, time, battery level, and signal strength. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0413] Figure 42B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0414] Figure 42C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, operation keys 9005 as buttons for operation on the side of the housing 9000, and connection terminals 9006 on the bottom.

[0415] Figure 42D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. The charging operation can be configured to be performed by wireless power supply.

[0416] Figures 42E to 42G are perspective views showing a foldable portable information terminal 9201. Figure 42E shows the portable information terminal 9201 in an unfolded state, Figure 42G shows it in a folded state, and Figure 42F shows a perspective view of the state in between, transitioning from one of Figures 42E or 42G to the other. The portable information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0417] This embodiment can be combined with other embodiments as appropriate.

[0418] ELA: light, ELB: light, ELC: light, FL_408: capacitance, FL_411: bump, FL_412: adhesive layer, FP: layer, FP_130: substrate, FP_406B: light-emitting device, FP_406G: light-emitting device, FP_406R: light-emitting device, FP_421: protective layer, FP_422: layer, REFA: layer, REFB: layer, REFC: layer, Res: resist, 40: pixel, 71: sub-pixel, 74: pixel array, 75: circuit, 76: circuit, 77: layer, 78: layer, 79: layer, 103A: unit, 103a: film, 103B: unit, 103b: film, 103C: Unit, 104A: layer, 104A(i): region, 104A(o): region, 104a: film, 104a(i): region, 104a(o): region, 104B: layer, 104b: film, 104C: layer, 105A: layer, 105A(i): region, 105A(o): region, 105a: film, 105B: layer, 105b: film, 105C: layer, 106A: intermediate layer, 106B: intermediate layer, 280: display module, 281: display unit, 282: circuit unit, 283: pixel circuit unit, 283a: pixel circuit, 284: pixel unit, 284a: pixel, 285: terminal unit, 285_1: terminal unit, 285_4: terminal Part, 286: Wiring part, 290: FPC, 291: Substrate, 292: Substrate, 401_11: Conductive layer, 401_12: Low resistance region, 401_13: Insulating layer, 401_14: Insulating layer, 402_21: Semiconductor layer, 402_23: Insulating layer, 402_24: Conductive layer, 402_25: Conductive layer, 402_27: Conductive layer, 403_21: Semiconductor layer, 403_25a: Conductive layer, 403_25b: Conductive layer, 403_27: Conductive layer, 501: Insulating layer, 510: Substrate, 520: Functional layer, 521: Insulating layer, 529: Structure, 529Bs: Base part, 529Cnp: Overhang part, 529cnp : film, 529Ins: layer, 529ins: film, 529Spt: support part, 529Tch: groove, 530A: pixel circuit, 530B: pixel circuit, 530C: pixel circuit, 550A: light-emitting device, 550B: light-emitting device, 550C: light-emitting device, 551A: electrode, 551B: electrode, 551C: electrode, 552a: film, 552A: electrode, 552b: film, 552B: electrode, 552C: electrode, 573: layer, 573A: layer, 573a: film, 573B: layer, 573b: film, 573C: layer, 700: display device, 700A: display device, 700B: display device, 700C: display device,700D: Display device, 700E: Display device, 702A: Pixel, 702B: Pixel, 702C: Pixel, 703: Pixel, 731: Display area, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: I C, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8700A: Electronic equipment, 8700B: Electronic equipment, 8721: Housing, 8723: Mounting part, 8727: Earphone part, 8750: Earphone, 8751: Display panel, 8753: Optical component, 8756: Display area, 8757: Frame, 8758: Nose pad, 8800A: Electronic equipment, 8800B: Electronic equipment, 8820: Display unit, 8821: Housing, 8822: Communication unit, 8823: Mounting part, 8824: Control unit, 8825: Imaging unit, 8827: I Yahoo section, 8832: Lens, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9103: Tablet terminal, 9200: Personal digital assistant, 9201: Personal digital assistant,

Claims

Insulating layer and, A first light-emitting device and A second light-emitting device, It has a structure, The first light-emitting device is located on the insulating layer, The second light-emitting device is located on the insulating layer alongside the first light-emitting device, The aforementioned structure comprises a support portion and an overhang portion, The support portion is located between the first light-emitting device and the second light-emitting device, and is located on the insulating layer. The awning portion has a shape that protrudes from the support portion toward the upper part of the first light-emitting device, The first light-emitting device of the present invention comprises a first electrode, a second electrode, a first unit, and a first layer. The first electrode is located on the insulating layer, The second electrode overlaps with the first electrode, The first unit is sandwiched between the second electrode and the first electrode. The first unit described above includes a first luminescent material, The first layer is sandwiched between the first unit and the first electrode. The first layer comprises a material having hole transport properties, The first layer comprises a first region and a second region, The second region is located at the edge of the first layer, The second region is closer to the support portion than the first region. The second region is in contact with the first unit, The first region is in contact with the first unit and the first electrode, A display device comprising a first region containing an electron-accepting material at a higher concentration than the second region. 　 The first light-emitting device comprises a second unit and a second layer, The second unit is sandwiched between the second electrode and the first unit. The second unit comprises a second luminescent material, The second layer is sandwiched between the second unit and the first unit. The second layer comprises the hole-transporting material, The second layer comprises a third region and a fourth region, The fourth region is located at the end of the second layer, The fourth region is closer to the support portion than the third region, The fourth region is in contact with the second unit, The third region is in contact with the second unit and overlaps with the first electrode. The display device according to claim 1, wherein the third region contains the electron-accepting material at a higher concentration than the fourth region. 　 The display device according to claim 1 or claim 2, wherein the awning portion covers the second region. 　 The display device according to claim 2, wherein the awning covers the fourth region. 　 The aforementioned structure includes a base portion, The base portion is sandwiched between the support portion and the insulating layer. The base portion includes a portion sandwiched between the first layer and the first electrode, The base portion covers the end of the first electrode, The base portion includes a portion that contacts the second region, The display device according to claim 3, wherein the base portion is insulating. 　 The support portion is electrically conductive, The support portion is electrically connected to the second electrode, The base portion is provided with a groove, The display device according to claim 5, wherein the groove is located between the support portion and the second light-emitting device. 　 The display device according to claim 6, A display module having at least one of a connector and an integrated circuit. 　 The display device according to claim 6, An electronic device having at least one of a battery, a camera, a speaker, and a microphone.

Images