Highly doped semiconductor device high-efficiency numerical simulation method

Abstract

The application discloses a high-efficiency numerical simulation method for a high-doped semiconductor device, and the method comprises the following steps: based on a drift-diffusion model and a density gradient quantum correction model, a semiconductor device model equation set is constructed; a finite volume method is used to perform three-dimensional space discretization on the semiconductor device model equation set, so that a discrete equation set is obtained; the discrete equation set is solved through a Newton iteration method, and iteration is performed until the residual error of electric potential and carrier concentration is smaller than a convergence threshold; and a numerical simulation result is output. Through modification of a correction factor in a traditional drift-diffusion model, the simulation model simultaneously considers Fermi-Dirac statistics and quantum correction effects which are closer to physical actuality, so that the simulation numerical simulation precision of a nanometer device with high concentration doping is significantly improved, and the application is helpful to device design, electrical property analysis, device optimization and other fields.

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