A method for producing a high-conductivity DLC film
By oxidizing the surface of the DLC film, some carbon atoms are transformed into oxygen-containing functional groups, which solves the problem of insufficient conductivity of the DLC film and realizes the preparation of highly conductive DLC films, which are suitable for a variety of applications.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SAE TECH DELEVOPMENT DONGGUAN
- Filing Date
- 2024-11-28
- Publication Date
- 2026-05-29
AI Technical Summary
In existing technologies, DLC films have poor conductivity, making it difficult to meet the requirements of certain special application scenarios.
By oxidizing the surface of the DLC film, some carbon atoms are transformed into oxygen-containing functional groups, and the conductivity is improved by electrochemical, thermal oxidation, or plasma oxidation methods.
It effectively improves the conductivity of DLC films while maintaining their mechanical and optical properties, and is simple to operate and inexpensive.
Smart Images

Figure CN122105351A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of thin film preparation technology, and in particular to a method for preparing a highly conductive DLC film. Background Technology
[0002] DLC (Diamond-like Carbon) film is a new type of carbon-based thin film. It is widely used due to its advantages such as high hardness, low coefficient of friction, and chemical stability. At the same time, it is widely used in the fields of electronics and optics due to its good mechanical properties, oxidation stability, and optical transparency.
[0003] However, in certain special applications, the conductivity of DLC films is required to be high, while the conductivity of DLC films prepared by traditional methods is poor. Therefore, how to improve the conductivity of DLC films has become a problem to be solved. Summary of the Invention
[0004] The purpose of this invention is to provide a method for preparing a highly conductive DLC film, which can effectively improve the conductivity of the DLC film by oxidizing the surface of the DLC film to increase the number of oxygen-containing functional groups.
[0005] To achieve the above objectives, embodiments of the present invention provide a method for preparing a highly conductive DLC film, comprising:
[0006] Preparation of original DLC membrane;
[0007] The surface of the original DLC film is oxidized to convert some of the carbon atoms in the original DLC film into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0008] Furthermore, the preparation of the original DLC membrane specifically involves:
[0009] The original DLC film is prepared by at least one of the chemical vapor deposition method or the physical vapor deposition method.
[0010] Furthermore, the oxidation treatment of the surface of the original DLC film specifically includes:
[0011] The surface of the original DLC film is oxidized using at least one of the following methods: electrochemical oxidation, thermal oxidation, and plasma oxidation.
[0012] Furthermore, when using the electrochemical oxidation method, the oxidation treatment of the surface of the original DLC film specifically includes:
[0013] The original DLC film was used as the working electrode, and 1 mol / L sulfuric acid was used as the electrolyte. A voltage was applied in the range of 0.5 to 1.5 V to perform electrochemical oxidation treatment on the surface of the original DLC film.
[0014] Furthermore, when using the aforementioned thermal oxidation method, the oxidation treatment of the surface of the original DLC film specifically involves:
[0015] The original DLC film was placed in high-temperature oxygen to perform thermal oxidation treatment on the surface of the original DLC film.
[0016] Furthermore, when using the plasma oxidation method, the oxidation treatment of the surface of the original DLC film specifically involves:
[0017] The original DLC film was placed in an oxidizing plasma to perform plasma oxidation treatment on the surface of the original DLC film.
[0018] Compared with existing technologies, this invention provides a method for preparing a highly conductive DLC film. First, a raw DLC film is prepared; then, the surface of the raw DLC film is oxidized, causing some carbon atoms in the raw DLC film to transform into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film. This invention effectively improves the conductivity of the DLC film by increasing the number of oxygen-containing functional groups through surface oxidation. Attached Figure Description
[0019] Figure 1 This is a flowchart of a preferred embodiment of a method for preparing a highly conductive DLC film provided by the present invention. Detailed Implementation
[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0021] This invention provides a method for preparing a highly conductive DLC film, see [link to relevant documentation]. Figure 1 The diagram shown is a flowchart of a preferred embodiment of a method for preparing a highly conductive DLC film provided by the present invention, the method comprising steps S11 to S12:
[0022] Step S11: Prepare the original DLC membrane;
[0023] Step S12: Oxidize the surface of the original DLC film to convert some carbon atoms in the original DLC film into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0024] In practice, the original DLC film is first prepared and its surface is made smooth and flat. Then, the surface of the original DLC film is oxidized so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0025] It should be noted that after obtaining a highly conductive DLC film by means of the embodiments of the present invention, the conductivity of the surface of the highly conductive DLC film can be tested by means of testing methods such as the four-probe method and a resistance tester.
[0026] In one optional embodiment, the preparation of the original DLC film specifically involves:
[0027] The original DLC film is prepared by at least one of the chemical vapor deposition method or the physical vapor deposition method.
[0028] Specifically, in conjunction with the above embodiments, the original DLC film can be prepared by methods such as chemical vapor deposition and physical vapor deposition.
[0029] It is understood that, in addition to chemical vapor deposition and physical vapor deposition, other applicable thin film preparation methods can also be used, and the embodiments of the present invention do not specifically limit them.
[0030] In one optional embodiment, the oxidation treatment of the surface of the original DLC film specifically involves:
[0031] The surface of the original DLC film is oxidized using at least one of the following methods: electrochemical oxidation, thermal oxidation, and plasma oxidation.
[0032] Specifically, in conjunction with the above embodiments, when oxidizing the surface of the original DLC film, electrochemical oxidation, thermal oxidation, plasma oxidation, and other methods can be used to oxidize the surface of the original DLC film, so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0033] It is understood that, in addition to electrochemical oxidation, thermal oxidation, and plasma oxidation, other applicable oxidation methods can also be used, and the embodiments of the present invention do not specifically limit them.
[0034] In one optional embodiment, when the electrochemical oxidation method is used, the oxidation treatment of the surface of the original DLC film specifically involves:
[0035] The original DLC film was used as the working electrode, and 1 mol / L sulfuric acid was used as the electrolyte. A voltage was applied in the range of 0.5 to 1.5 V to perform electrochemical oxidation treatment on the surface of the original DLC film.
[0036] Specifically, in conjunction with the above embodiments, when oxidizing the surface of the original DLC film using an electrochemical oxidation method, the original DLC film can be used as the working electrode, 1 mol / L sulfuric acid can be used as the electrolyte, and a voltage can be applied within a voltage range of 0.5V to 1.5V to perform electrochemical oxidation on the surface of the original DLC film, so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0037] For example, the applied voltage can be 0.5V, 0.6V, 0.7V, 0.8V, 0.9V, 1.0V, 1.1V, 1.2V, 1.3V, 1.4V or 1.5V, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.
[0038] In one optional embodiment, when using the thermal oxidation method, the oxidation treatment of the surface of the original DLC film specifically involves:
[0039] The original DLC film was placed in high-temperature oxygen to perform thermal oxidation treatment on the surface of the original DLC film.
[0040] Specifically, in conjunction with the above embodiments, when using thermal oxidation to oxidize the surface of the original DLC film, the original DLC film can be directly placed in a high-temperature oxygen environment to thermally oxidize the surface of the original DLC film, so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0041] In one optional embodiment, when using the plasma oxidation method, the oxidation treatment of the surface of the original DLC film specifically involves:
[0042] The original DLC film was placed in an oxidizing plasma to perform plasma oxidation treatment on the surface of the original DLC film.
[0043] Specifically, in conjunction with the above embodiments, when using plasma oxidation to oxidize the surface of the original DLC film, the original DLC film can be directly placed in an environment containing oxidizing plasma to perform plasma oxidation treatment on the surface of the original DLC film, so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0044] Based on all the above embodiments, the implementation process of this solution is described below through the first specific embodiment, including: (1) preparing the original DLC film by chemical vapor deposition, physical vapor deposition and other methods; (2) using the original DLC film as the working electrode, using 1 mol / L sulfuric acid as the electrolyte, and applying a voltage in the range of 0.5V to 1.5V to electrochemically oxidize the surface of the original DLC film, so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0045] Based on all the above embodiments, the implementation process of this solution is described below through a second specific embodiment, including: (1) preparing the original DLC film by chemical vapor deposition, physical vapor deposition and other methods; (2) placing the original DLC film in a high temperature oxygen environment to perform thermal oxidation treatment on the surface of the original DLC film, so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0046] Based on all the above embodiments, the implementation process of this solution is described below through a third specific embodiment, including: (1) preparing the original DLC film using chemical vapor deposition, physical vapor deposition and other methods; (2) placing the original DLC film in an environment containing oxidizing plasma to perform plasma oxidation treatment on the surface of the original DLC film, so that some carbon atoms in the original DLC film are transformed into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
[0047] In summary, the method for preparing a highly conductive DLC film provided by this invention involves first preparing a raw DLC film; then oxidizing the surface of the raw DLC film to convert some carbon atoms into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film. This invention effectively improves the conductivity of the DLC film by increasing the number of oxygen-containing functional groups through surface oxidation, while maintaining the excellent mechanical and optical properties of the DLC film itself. Furthermore, this invention is simple to operate, low in cost, and applicable to a wide range of DLC film applications, making it a technical solution with practical value.
[0048] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A method for preparing a highly conductive DLC film, characterized in that, include: Preparation of original DLC membrane; The surface of the original DLC film is oxidized to convert some of the carbon atoms in the original DLC film into oxygen-containing functional groups, thereby obtaining a highly conductive DLC film.
2. The method for preparing a highly conductive DLC film as described in claim 1, characterized in that, The preparation of the original DLC film specifically involves: The original DLC film is prepared by at least one of the chemical vapor deposition method or the physical vapor deposition method.
3. The method for preparing a highly conductive DLC film as described in claim 1, characterized in that, The oxidation treatment of the surface of the original DLC film specifically involves: The surface of the original DLC film is oxidized using at least one of the following methods: electrochemical oxidation, thermal oxidation, and plasma oxidation.
4. The method for preparing a highly conductive DLC film as described in claim 3, characterized in that, When the electrochemical oxidation method is used, the oxidation treatment of the surface of the original DLC film specifically includes: The original DLC film was used as the working electrode, and 1 mol / L sulfuric acid was used as the electrolyte. A voltage was applied in the range of 0.5 to 1.5 V to perform electrochemical oxidation treatment on the surface of the original DLC film.
5. The method for preparing a highly conductive DLC film as described in claim 3, characterized in that, When the thermal oxidation method is used, the oxidation treatment of the surface of the original DLC film specifically includes: The original DLC film was placed in high-temperature oxygen to perform thermal oxidation treatment on the surface of the original DLC film.
6. The method for preparing a highly conductive DLC film as described in claim 3, characterized in that, When the plasma oxidation method is used, the oxidation treatment of the surface of the original DLC film specifically includes: The original DLC film was placed in an oxidizing plasma to perform plasma oxidation treatment on the surface of the original DLC film.