A material silicon plating control method based on cvd and pvd plating linkage execution

Abstract

The present application relates to a kind of material silicon plating control method based on cvd and pvd film coating linkage execution, belong to material surface film coating technical field.The method includes: the first chemical vapor deposition control is executed to material, according to substrate surface roughness matching gas phase reaction source supply rate, control deposition reaction atmosphere, and silicon substrate film layer is generated according to base film layer thickness threshold value and output process switching trigger signal;Physical vapor deposition control is executed, and particle deposition energy and flux are matched, and intermediate transition film layer is formed in low stress deposition mode and output process return trigger signal;Second chemical vapor deposition control is executed, adjusts deposition uniformity control parameter, and surface layer film layer is formed using global covering deposition method, and composite silicon film structure is prepared.The present application improves the compactness of film layer and bonding strength, reduces internal stress, adapts complex workpiece film coating, and gives consideration to production efficiency and film formation quality.

Description

Technical Field

[0001] This invention belongs to the field of material surface coating technology, specifically relating to a material silicon plating control method based on the linkage execution of CVD and PVD coating. Background Technology

[0002] Optical anti-reflective coating is a key surface treatment process for core optical components such as headlight reflectors and mirrors in automobiles. The density, internal stress, bonding strength, and aging resistance of the coating directly determine the optical reflection efficiency, lifespan, and environmental adaptability of the device. As automotive lighting develops towards higher brightness, longer lifespan, and higher reliability, increasingly stringent requirements are being placed on the comprehensive performance of coating processes. Existing single coating processes are no longer sufficient to meet the dual demands of industrial production and product performance.

[0003] Currently, there are three main technical routes for the preparation of silicon antireflective coatings in the industry, all of which have significant drawbacks: Electron gun evaporation coating process: As a traditional coating method, it relies on the heating of the electron gun to vaporize and deposit the silicon source. Although the equipment cost is low, the deposition rate is slow and the batch processing capacity is limited, making it difficult to meet the production capacity for large-scale production. At the same time, the vaporized particles have low kinetic energy and loose accumulation, resulting in high porosity and poor density inside the film layer. Under high temperature and humidity conditions, it is prone to oxidation and moisture failure, and has extremely poor aging resistance and weather resistance, which cannot meet the long-term use requirements of high-end automotive optical devices.

[0004] Full magnetron sputtering (PVD) coating process: This process deposits films by bombarding particles, which improves the density and deposition efficiency of the film layer and solves the shortcomings of electron gun evaporation in terms of production capacity and density. However, the high-energy bombardment of particles can lead to excessive residual stress inside the film layer. Especially on complex curved surfaces such as reflectors, problems such as film warping, cracking and peeling are likely to occur. Moreover, the coverage of single magnetron sputtering is limited, the film layer adhesion is unstable, and the optical performance degrades rapidly after long-term use.

[0005] Single-stage RF CVD silicon deposition process: This process deposits silicon films through vapor-phase chemical reactions, which can effectively reduce internal stress in the film layer and improve film density and aging resistance, thus compensating for the shortcomings of the previous two processes to some extent. However, single-stage CVD processes have obvious limitations: insufficient interfacial bonding strength, poor uniform coating effect across complex morphological workpieces, difficulty in synergistically optimizing film protection performance and optical reflectivity, and inability to balance process efficiency with the integrated molding of multilayer films, thus failing to achieve a unified approach of low stress, high density, strong protection, and high throughput.

[0006] In summary, existing coating technologies cannot simultaneously solve core problems such as insufficient production capacity, loose film layer, excessive internal stress, poor coating properties, and insufficient aging resistance. The industry urgently needs a silicon coating control method that links CVD and PVD processes to break through the technical bottleneck of a single process. Summary of the Invention

[0007] To address the aforementioned problems in the prior art, this invention provides a material silicon plating control method based on the coordinated execution of CVD and PVD coating.

[0008] The objective of this invention can be achieved through the following technical solution: a material silicon plating control method based on the coordinated execution of CVD and PVD coating, comprising: S1: After the material is fed into the deposition station, the first chemical vapor deposition control is performed. The gas phase reaction source supply rate is matched according to the surface roughness of the substrate. The deposition reaction atmosphere is adjusted in combination with the preset substrate temperature range. The deposition duration is constrained according to the preset base film thickness threshold. A silicon base film is generated on the substrate surface, and a process switching trigger signal is generated at the same time. S2: Physical vapor deposition control is executed according to the process switching trigger signal. The particle deposition energy and flux are matched with the interface characteristics of the silicon substrate film. The particle arrangement is controlled by a low-stress deposition mode. An intermediate transition film is formed on the surface of the silicon substrate film. At the same time, a process feedback trigger signal is generated. S3: Based on the process feedback trigger signal, perform secondary chemical vapor deposition control, adjust the deposition uniformity control parameters according to the surface state of the intermediate transition film, use the full-domain encapsulation deposition method to constrain the film boundary coverage range, form a surface film on the outside of the intermediate transition film, and generate a composite silicon film structure.

[0009] Specifically, the process of matching the gas phase reaction source supply rate according to the substrate surface roughness is as follows: The overall roughness distribution characteristics of the substrate surface are obtained, and the control benchmark of the gas phase reaction source supply rate is set according to the overall roughness distribution characteristics. The supply rate is dynamically adjusted in zones according to the difference in roughness at different locations of the substrate, and the adjustment range is corrected based on the real-time changes in surface roughness during the deposition process.

[0010] Specifically, the process of regulating the deposition reaction atmosphere is as follows: Using the substrate temperature range as the core control benchmark, the pressure inside the deposition chamber is controlled to a benchmark range that is compatible with the substrate temperature range, and the mixing ratio of the gas phase reaction source and the carrier gas is adjusted in segments according to the preset temperature threshold. Simultaneously, the airflow guiding structure within the deposition chamber is adjusted to control the airflow rate and distribution density. Throughout the entire process of the first chemical vapor deposition, the temperature fluctuations of the substrate are captured in real time, and the pressure, gas mixing ratio, and airflow velocity within the chamber are adjusted accordingly.

[0011] Specifically, the process of constraining the deposition duration according to the preset base film thickness threshold is as follows: A preset substrate film thickness threshold is established. Simultaneously with the initiation of the first chemical vapor deposition, real-time film thickness monitoring is activated to continuously acquire film thickness data on the substrate surface. The real-time monitored thickness data is compared with the substrate film thickness threshold. If the thickness does not reach the substrate film thickness threshold, the current deposition parameters are maintained to continue the deposition reaction. When the thickness reaches the substrate film thickness threshold, a deposition stop command is triggered to terminate the first chemical vapor deposition reaction.

[0012] Specifically, the process of generating a silicon substrate film layer on the substrate surface and simultaneously generating a process switching trigger signal is as follows: Under the controlled deposition reaction atmosphere and the matching gas phase reaction source supply rate, the gas phase reaction source continuously performs a deposition reaction on the substrate surface, and the reaction-generated material adheres and accumulates to form the silicon substrate film layer; during the film layer formation process, the thickness data is compared with the substrate film layer thickness threshold, and the comparison result is converted into the process switching trigger signal.

[0013] Specifically, the process of matching particle deposition energy and flux based on the interfacial characteristics of the silicon substrate film is as follows: The interface characteristics of the silicon substrate film are obtained, and a benchmark matching range for particle deposition energy and flux is preset based on the interface characteristics. The particle deposition energy and flux are dynamically adjusted in different regions of the interface according to the characteristic differences, and the adjustment parameters are synchronously corrected according to the real-time state of the interface.

[0014] Specifically, the process of controlling the particle arrangement morphology using a low-stress deposition mode is as follows: In the low-stress deposition mode, the particle incident angle and deposition rate are graded and coordinated to control the accumulation of internal stress during the film growth process; combined with the preset interface guidance to constrain the stacking direction of the deposited particles, the deposition parameters are adjusted in real time to construct a particle arrangement structure on the silicon substrate film.

[0015] Specifically, the process of forming an intermediate transition film layer on the surface of the silicon substrate film layer and simultaneously generating a process feedback trigger signal is as follows: Based on the particle deposition energy and flux and the low-stress deposition mode, the deposited particles are continuously deposited and stacked on the surface of the silicon substrate film to generate the intermediate transition film. The deposition and forming state of the intermediate transition film is monitored in real time and compared with the preset deposition termination conditions to generate the process feedback trigger signal.

[0016] Specifically, the process of performing secondary chemical vapor deposition control based on the process feedback trigger signal is as follows: Upon receiving the process feedback trigger signal, the deposition process mode is switched and the current physical vapor deposition process is terminated, and the chemical vapor deposition control module is started; based on the surface structure characteristics of the intermediate transition film layer, the corresponding gas phase reaction parameters and deposition sequence are matched, and the secondary chemical vapor deposition control is executed.

[0017] Specifically, the process of adjusting the deposition uniformity control parameters based on the surface state of the intermediate transition film layer is as follows: The surface morphology and density distribution of the intermediate transition film are obtained. Based on the differences in surface state in different regions, the uniformity control parameters are adjusted in zones. At the same time, the surface state of the film is fed back in real time, and the adjustment range of the parameters is dynamically corrected.

[0018] Specifically, the process of constraining the coverage area of ​​the film layer boundary using the full-domain encapsulation deposition method is as follows: The surface structure characteristics of the intermediate transition film are obtained, and the global coating deposition parameters that match the secondary chemical vapor deposition are set. The global uniform coating is achieved by adjusting the deposition gas flow distribution and the reaction source supply path. The extension trend of the film boundary is monitored in real time, and the deposition parameters are dynamically corrected.

[0019] Specifically, the process of forming a surface film layer on the outside of the intermediate transition film layer to generate a composite silicon film structure is as follows: Under the boundary constraints of full-domain encapsulation deposition, corresponding deposition reaction parameters are matched to deposit a surface film layer on the outside of the intermediate transition film layer; relying on the interfacial bonding characteristics between the film layers, the silicon substrate film layer, the intermediate transition film layer and the surface film layer are integrated into a composite structure to generate the composite silicon film structure.

[0020] The beneficial effects of this invention are as follows: To improve the density and aging resistance of the film, CVD vapor deposition is used to form silicon substrate films and surface films. By utilizing the characteristics of vapor-phase reaction film formation, the defects of loose and high porosity in the film layer of electron gun evaporation process are fundamentally solved, thereby improving the density of the composite silicon film structure. At the same time, the full-area coating deposition mode ensures that the film layer completely covers the substrate surface, effectively blocking water vapor and oxygen erosion, extending the product's aging resistance test time, and making it suitable for long-term harsh operating conditions of devices such as automotive headlight reflectors and rearview mirrors.

[0021] To fundamentally reduce internal stress in the film and improve bonding reliability, a CVD-PVD-CVD linked film formation structure is adopted. An intermediate transition film is prepared through a low-stress PVD deposition mode. The particle incident angle, deposition rate and stacking direction are synergistically controlled to avoid the problem of excessive internal stress caused by high-energy particle bombardment in the all-magnetron sputtering process, thus eliminating the risk of film warping, cracking and delamination. The three film layers are tightly bonded by the interface characteristics, and the overall bonding strength is higher than that of films formed by a single process, improving the adhesion and stability of the film on complex curved workpieces.

[0022] Balancing production capacity and film uniformity, this technology integrates the advantages of high-quality CVD film formation and high-efficiency PVD deposition, making it suitable for large-scale production. It addresses the shortcomings of insufficient production capacity in traditional electron gun evaporation. Furthermore, by dynamically controlling the gas phase reaction source supply rate, particle deposition energy, and flux in different zones, it adjusts parameters in real time for different locations of the substrate roughness and surface condition, ensuring uniform film formation across the entire surface of workpieces with complex morphology, thus balancing mass production efficiency and coating yield.

[0023] The process linkage has a high degree of automation and stronger control precision. Based on film thickness monitoring and interface characteristic feedback, the process can be automatically switched. The deposition parameters are dynamically adjusted according to the film growth state, without the need for frequent manual intervention, resulting in better process repeatability and consistency. The precise constraints on the thickness of each film layer, deposition atmosphere and particle arrangement can stably produce composite silicon films with uniform performance and controllable quality, reducing the production waste rate. Attached Figure Description

[0024] To facilitate understanding by those skilled in the art, the present invention will be further described below with reference to the accompanying drawings.

[0025] Figure 1 This is a schematic flowchart of a material silicon plating control method based on the coordinated execution of CVD and PVD film deposition according to the present invention. Figure 2 This is the schematic diagram of the first closed-loop control principle of the CVD parameter in this invention. Detailed Implementation

[0026] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention, in conjunction with the accompanying drawings and preferred embodiments, is provided.

[0027] Please see Figure 1-2 A method for controlling silicon deposition of materials based on the coordinated execution of CVD and PVD deposition, comprising: S1: After the material is fed into the deposition station, the first chemical vapor deposition control is performed. The gas phase reaction source supply rate is matched according to the surface roughness of the substrate. The deposition reaction atmosphere is adjusted in combination with the preset substrate temperature range. The deposition duration is constrained according to the preset base film thickness threshold. A silicon base film is generated on the substrate surface, and a process switching trigger signal is generated at the same time. S2: Physical vapor deposition control is executed according to the process switching trigger signal. The particle deposition energy and flux are matched with the interface characteristics of the silicon substrate film. The particle arrangement is controlled by a low-stress deposition mode. An intermediate transition film is formed on the surface of the silicon substrate film. At the same time, a process feedback trigger signal is generated. S3: Based on the process feedback trigger signal, perform secondary chemical vapor deposition control, adjust the deposition uniformity control parameters according to the surface state of the intermediate transition film, use the full-domain encapsulation deposition method to constrain the film boundary coverage range, form a surface film on the outside of the intermediate transition film, and generate a composite silicon film structure.

[0028] Specifically, the process of matching the gas phase reaction source supply rate according to the substrate surface roughness is as follows: The overall roughness distribution characteristics of the substrate surface are obtained, and the control benchmark of the gas phase reaction source supply rate is set according to the overall roughness distribution characteristics. The supply rate is dynamically adjusted in zones according to the difference in roughness at different locations of the substrate, and the adjustment range is corrected based on the real-time changes in surface roughness during the deposition process.

[0029] Specifically, the process of regulating the deposition reaction atmosphere is as follows: Using the substrate temperature range as the core control benchmark, the pressure inside the deposition chamber is controlled to a benchmark range that is compatible with the substrate temperature range, and the mixing ratio of the gas phase reaction source and the carrier gas is adjusted in segments according to the preset temperature threshold. Simultaneously, the airflow guiding structure within the deposition chamber is adjusted to control the airflow rate and distribution density. Throughout the entire process of the first chemical vapor deposition, the temperature fluctuations of the substrate are captured in real time, and the pressure, gas mixing ratio, and airflow velocity within the chamber are adjusted accordingly.

[0030] Specifically, the process of constraining the deposition duration according to the preset base film thickness threshold is as follows: A preset substrate film thickness threshold is established. Simultaneously with the initiation of the first chemical vapor deposition, real-time film thickness monitoring is activated to continuously acquire film thickness data on the substrate surface. The real-time monitored thickness data is compared with the substrate film thickness threshold. If the thickness does not reach the substrate film thickness threshold, the current deposition parameters are maintained to continue the deposition reaction. When the thickness reaches the substrate film thickness threshold, a deposition stop command is triggered to terminate the first chemical vapor deposition reaction.

[0031] Specifically, the process of generating a silicon substrate film layer on the substrate surface and simultaneously generating a process switching trigger signal is as follows: Under the controlled deposition reaction atmosphere and the matching gas phase reaction source supply rate, the gas phase reaction source continuously performs a deposition reaction on the substrate surface, and the reaction-generated material adheres and accumulates to form the silicon substrate film layer; during the film layer formation process, the thickness data is compared with the substrate film layer thickness threshold, and the comparison result is converted into the process switching trigger signal.

[0032] In this embodiment, the reflector cup of an automotive headlight is used as the material to be coated; the following details the entire process of preparing the silicon substrate film using the first chemical vapor deposition (CVD) method: Automatic material placement and deposition initialization: The automotive headlight reflector substrate, which has undergone degreasing and plasma cleaning pretreatment, is precisely transported to the rotary deposition station of the CVD deposition chamber via an automated conveyor line and clamped in the tooling. After receiving the material positioning signal, the control system closes the chamber sealing door, starts the vacuum pre-evacuation procedure, and prepares to execute the first chemical vapor deposition control.

[0033] Matching of substrate roughness global detection with gas phase reaction source supply rate: Initiate online laser roughness detection within the CVD cavity to perform a 360° full-area scan of the cup body curved surface, cup mouth edge, and bottom transition area of ​​the reflector cup to obtain a complete roughness distribution cloud map of the substrate surface; The control system sets the basic supply rate V0 of the gas phase reaction source based on the overall roughness distribution characteristics, which serves as the control benchmark for the entire region. Based on the roughness differences at different locations of the reflector cup, the deposition surface is divided into three control zones: the cup body zone, the edge zone, and the transition zone. Dynamic supply rates V1, V2, and V3 are set for each zone to achieve differentiated gas supply. During the deposition process, surface data is collected in real time by roughness detection, and the control system continuously adjusts the supply rate of each zone to ensure sufficient gas supply in rough areas and accurate gas supply in smooth areas, thus avoiding uneven film thickness.

[0034] Multi-parameter closed-loop control of deposition reaction atmosphere: Using the preset substrate temperature range T1 to T2 as the core benchmark, the substrate temperature is stabilized within the target range through the cavity heating plate and the substrate back temperature sensor. Simultaneously adjust the chamber pressure to the appropriate pressure range P1~P2 to ensure a stable pressure environment for the gas phase reaction. Using a preset temperature threshold T0 as the segmentation node, when the temperature is below T0, the gas phase reaction source and carrier gas ratio K1 is used, and when the temperature reaches above T0, the ratio K2 is switched to improve the reaction stability. Adjust the angle between the airflow guide vanes and the air inlet nozzle in the cavity, control the airflow rate to U0 and the distribution density to R0, and ensure that the reaction gas uniformly covers the complex curved surface of the reflector cup. The system captures substrate temperature fluctuations in real time throughout the process, and the control system synchronously adjusts the chamber pressure, gas ratio, and airflow rate in a closed loop to prevent film formation defects caused by temperature drift.

[0035] Thickness threshold constraint and deposition time control: The control system presets a silicon substrate film thickness threshold D0 as the first CVD termination condition. Simultaneously with the start of deposition, online optical film thickness monitoring is activated to collect film thickness data Dx in real time without contact. The system continuously compares Dx with D0: when Dx < D0, all deposition parameters remain unchanged and deposition continues; when Dx = D0, a stop command is immediately triggered to cut off the reaction gas source and terminate the first CVD reaction.

[0036] Base film forming and process switching signal generation: Under a stable deposition atmosphere and precise gas supply, the gas phase reaction source continuously reacts and accumulates uniformly on the surface of the reflector cup, forming a dense and strongly adherent silicon substrate film layer. The film thickness target signal is transmitted to the control system in real time. The system converts the signal into a process switching trigger signal, which in turn controls the transmission mechanism to send the material into the PVD station, ready to perform intermediate transition film deposition.

[0037] Specifically, the process of matching particle deposition energy and flux based on the interfacial characteristics of the silicon substrate film is as follows: The interface characteristics of the silicon substrate film are obtained, and a benchmark matching range for particle deposition energy and flux is preset based on the interface characteristics. The particle deposition energy and flux are dynamically adjusted in different regions of the interface according to the characteristic differences, and the adjustment parameters are synchronously corrected according to the real-time state of the interface.

[0038] Specifically, the process of controlling the particle arrangement morphology using a low-stress deposition mode is as follows: In the low-stress deposition mode, the particle incident angle and deposition rate are graded and coordinated to control the accumulation of internal stress during the film growth process; combined with the preset interface guidance to constrain the stacking direction of the deposited particles, the deposition parameters are adjusted in real time to construct a particle arrangement structure on the silicon substrate film.

[0039] Specifically, the process of forming an intermediate transition film layer on the surface of the silicon substrate film layer and simultaneously generating a process feedback trigger signal is as follows: Based on the particle deposition energy and flux and the low-stress deposition mode, the deposited particles are continuously deposited and stacked on the surface of the silicon substrate film to generate the intermediate transition film. The deposition and forming state of the intermediate transition film is monitored in real time and compared with the preset deposition termination conditions to generate the process feedback trigger signal.

[0040] In this embodiment, the scenario of the previous embodiment is continued, and the operation S2 is performed. The specific process is as follows: Upon receiving the process switching trigger signal, the automated transfer mechanism will precisely transfer the automotive headlight reflector that has completed its first CVD deposition from the CVD deposition station to the PVD deposition station; the control system will initiate the physical vapor deposition control process to prepare for the preparation of an intermediate transition film on the surface of the silicon substrate film.

[0041] Detection of interfacial characteristics of silicon substrate films and matching of particle deposition energy and flux: The interface state of the silicon substrate film is detected in a global, non-contact manner to obtain the interface characteristics such as the surface smoothness, interfacial bonding strength, film density, and surface energy distribution of the substrate film, forming a complete set of interface characteristic parameters. Based on the detected interface characteristics, the particle deposition energy benchmark matching range E1~E2 and the particle deposition flux benchmark matching range F1~F2 are preset in the control system as the basic control basis for PVD deposition. Based on the differences in interface characteristics between the reflector cup body area, edge area, and transition area, the deposition surface is divided into corresponding control zones. Particle deposition energies E0, E1, and E2 and particle deposition fluxes F0, F1, and F2 are set for different zones to implement dynamic adjustment of the zones, ensuring that different interface areas can match suitable particle deposition parameters. Throughout the PVD deposition process, the real-time interface state of the silicon substrate film is continuously collected. Based on the real-time changes in the interface state, the adjustment parameters of particle deposition energy and flux in each zone are simultaneously corrected to ensure that particle deposition and interface characteristics are always highly matched.

[0042] Particle arrangement morphology regulation under low-stress deposition mode: By initiating a low-stress deposition mode and performing gradient-based coordinated control of particle incident angle and deposition rate, the accumulation of internal stress during film growth can be precisely controlled. The initial value of the particle incident angle is set to θ0, and the initial value of the deposition rate is set to S0. The particle incident angle and deposition rate are adjusted step by step according to the preset gradient to avoid the rapid increase of internal stress caused by continuous bombardment of high-energy particles. By combining the preset interface guidance to constrain the deposition direction of particles, the particles are guided to be deposited uniformly and orderly along the interface of the silicon substrate film, avoiding the loose film and stress concentration caused by disordered particle stacking. During the deposition process, the growth state and internal stress changes of the film are monitored in real time, and parameters such as particle incident angle, deposition rate, and bombardment energy are adjusted synchronously to construct a dense, uniform, and low-internal-stress stable particle arrangement structure on the silicon substrate film.

[0043] Intermediate transition film layer forming and process return trigger signal generation: Under the synergistic effect of matching particle deposition energy, flux and low-stress deposition mode, the deposited particles are continuously and stably deposited and stacked on the surface of the silicon substrate film, gradually forming a uniform and firmly bonded intermediate transition film. The system monitors the deposition and forming status of the intermediate transition film layer in real time, including its thickness, density, internal stress, and surface uniformity. The real-time monitoring data is continuously compared with the preset deposition termination condition M0. When all parameters of the intermediate transition film layer meet the preset deposition termination condition, the control system immediately generates a process feedback trigger signal and controls the automated transfer mechanism to transfer the material back to the CVD deposition station, preparing for secondary chemical vapor deposition.

[0044] Specifically, the process of performing secondary chemical vapor deposition control based on the process feedback trigger signal is as follows: Upon receiving the process feedback trigger signal, the deposition process mode is switched and the current physical vapor deposition process is terminated, and the chemical vapor deposition control module is started; based on the surface structure characteristics of the intermediate transition film layer, the corresponding gas phase reaction parameters and deposition sequence are matched, and the secondary chemical vapor deposition control is executed.

[0045] Specifically, the process of adjusting the deposition uniformity control parameters based on the surface state of the intermediate transition film layer is as follows: The surface morphology and density distribution of the intermediate transition film are obtained. Based on the differences in surface state in different regions, the uniformity control parameters are adjusted in zones. At the same time, the surface state of the film is fed back in real time, and the adjustment range of the parameters is dynamically corrected.

[0046] Specifically, the process of constraining the coverage area of ​​the film layer boundary using the full-domain encapsulation deposition method is as follows: The surface structure characteristics of the intermediate transition film are obtained, and the global coating deposition parameters that match the secondary chemical vapor deposition are set. The global uniform coating is achieved by adjusting the deposition gas flow distribution and the reaction source supply path. The extension trend of the film boundary is monitored in real time, and the deposition parameters are dynamically corrected.

[0047] Specifically, the process of forming a surface film layer on the outside of the intermediate transition film layer to generate a composite silicon film structure is as follows: Under the boundary constraints of full-domain encapsulation deposition, corresponding deposition reaction parameters are matched to deposit a surface film layer on the outside of the intermediate transition film layer; relying on the interfacial bonding characteristics between the film layers, the silicon substrate film layer, the intermediate transition film layer and the surface film layer are integrated into a composite structure to generate the composite silicon film structure.

[0048] In this embodiment, continuing from the previous embodiments, the series of operations of S3 are described in detail. The specific process is as follows: Process reflow and start-up of secondary CVD deposition: The control system receives the process feedback trigger signal, switches the deposition process mode and terminates the current physical vapor deposition process; the automated transfer mechanism accurately transfers the car headlight reflector with the intermediate transition film layer from the PVD deposition station back to the CVD deposition station. The control system combines the surface structure characteristics of the intermediate transition film layer, matches the corresponding gas phase reaction parameters and deposition sequence, and executes secondary chemical vapor deposition control.

[0049] Adjust the deposition uniformity control parameters based on the surface condition of the intermediate transition film layer: The surface morphology and density distribution of the intermediate transition film layer are detected by full-domain scanning, and surface state data such as surface flatness, film density, and surface roughness differences in the cup body area, edge area, and transition area of ​​the reflector are accurately obtained. Based on the differences in surface state in different regions detected, a baseline value C0 for the deposition uniformity control parameter is set in the control system, and partition adjustment parameters C1, C2, and C3 are matched for the three control partitions respectively to achieve partition-specific control of deposition uniformity. During the secondary chemical vapor deposition process, the changes in the film surface state are continuously fed back in real time. Based on the real-time fluctuations in surface morphology and density, the adjustment range of the uniformity control parameters of each zone is dynamically corrected to ensure that the film deposition remains uniform and stable throughout the entire process.

[0050] The full-area coating deposition method constrains the coverage range of the film boundary: The surface structure characteristics of the intermediate transition film layer were collected, and combined with the complex curved surface morphology of the automotive headlight reflector, the full-domain encapsulation deposition parameters adapted to the secondary chemical vapor deposition phase were set. By precisely controlling the airflow distribution state G0 and the reaction source supply path L0 in the CVD deposition chamber, the gas phase reaction source can fully cover the entire deposition surface of the reflector cup, achieving uniform coverage across the entire area without dead corners or leaks. During the deposition process, the extension trend of the film boundary is monitored in real time, with a focus on monitoring locations where incomplete boundary coverage is likely to occur, such as the edge of the cup and the corner of the curved surface. Based on the boundary extension, deposition parameters such as gas flow distribution and reaction source supply are dynamically adjusted to strictly constrain the coverage range of the film boundary and ensure that the surface film completely covers the intermediate transition film.

[0051] Surface film forming and composite silicon film structure generation: Under the boundary constraints of full-area encapsulation deposition, and with matching deposition reaction parameters, the gas-phase reaction source continuously deposits and reacts on the outside of the intermediate transition film layer, uniformly forming a dense and complete surface film layer. The silicon substrate film layer, intermediate transition film layer, and surface film layer are tightly interlocked based on the interfacial bonding characteristics between the film layers, forming an integrated bonded structure without delamination or shedding. Finally, a composite silicon film structure with high density, low internal stress, and strong protection is generated on the surface of the automotive headlight reflector, completing all coating processes.

[0052] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A method for controlling silicon deposition of materials based on the coordinated execution of CVD and PVD deposition, characterized in that, include: S1: After the material is fed into the deposition station, the first chemical vapor deposition control is performed. The gas phase reaction source supply rate is matched according to the surface roughness of the substrate. The deposition reaction atmosphere is adjusted in combination with the preset substrate temperature range. The deposition duration is constrained according to the preset base film thickness threshold. A silicon base film is generated on the substrate surface, and a process switching trigger signal is generated at the same time. S2: Physical vapor deposition control is executed according to the process switching trigger signal. The particle deposition energy and flux are matched with the interface characteristics of the silicon substrate film. The particle arrangement is controlled by a low-stress deposition mode. An intermediate transition film is formed on the surface of the silicon substrate film. At the same time, a process feedback trigger signal is generated. S3: Based on the process feedback trigger signal, perform secondary chemical vapor deposition control, adjust the deposition uniformity control parameters according to the surface state of the intermediate transition film, use the full-domain encapsulation deposition method to constrain the film boundary coverage range, form a surface film on the outside of the intermediate transition film, and generate a composite silicon film structure.

2. The method according to claim 1, characterized in that, The specific process of matching the gas phase reaction source supply rate according to the substrate surface roughness is as follows: The overall roughness distribution characteristics of the substrate surface are obtained, and the control benchmark of the gas phase reaction source supply rate is set according to the overall roughness distribution characteristics. The supply rate is dynamically adjusted in zones according to the difference in roughness at different locations of the substrate, and the adjustment range is corrected based on the real-time changes in surface roughness during the deposition process.

3. The method according to claim 1, characterized in that, The specific process for regulating the deposition reaction atmosphere is as follows: Using the substrate temperature range as the core control benchmark, the pressure inside the deposition chamber is controlled to a benchmark range that is compatible with the substrate temperature range, and the mixing ratio of the gas phase reaction source and the carrier gas is adjusted in segments according to the preset temperature threshold. Simultaneously, the airflow guiding structure within the deposition chamber is adjusted to control the airflow rate and distribution density. Throughout the entire process of the first chemical vapor deposition, the temperature fluctuations of the substrate are captured in real time, and the pressure, gas mixing ratio, and airflow velocity within the chamber are adjusted accordingly.

4. The method according to claim 1, characterized in that, The specific process of constraining the deposition duration according to the preset base film thickness threshold is as follows: The substrate film thickness threshold is preset, and at the same time as the first chemical vapor deposition is started, real-time film thickness monitoring is started to continuously acquire the thickness data of the film on the substrate surface; the real-time monitored thickness data is compared with the substrate film thickness threshold in real time, and if the thickness does not reach the substrate film thickness threshold, the current deposition parameters are maintained to continue the deposition reaction; When the thickness of the substrate film reaches the thickness threshold, a deposition stop command is triggered to terminate the first chemical vapor deposition reaction.

5. The method according to claim 4, characterized in that, The specific process of generating a silicon substrate film layer on the substrate surface and simultaneously generating a process switching trigger signal is as follows: Under the controlled deposition reaction atmosphere and the matching gas phase reaction source supply rate, the gas phase reaction source continuously performs a deposition reaction on the substrate surface, and the reaction-generated material adheres and accumulates to form the silicon substrate film layer; during the film layer formation process, the thickness data is compared with the substrate film layer thickness threshold, and the comparison result is converted into the process switching trigger signal.

6. The method according to claim 1, characterized in that, The specific process of matching particle deposition energy and flux with the interfacial properties of the silicon substrate film is as follows: The interface characteristics of the silicon substrate film are obtained, and a benchmark matching range for particle deposition energy and flux is preset based on the interface characteristics. The particle deposition energy and flux are dynamically adjusted in different regions of the interface according to the characteristic differences, and the adjustment parameters are synchronously corrected according to the real-time state of the interface.

7. The method according to claim 1, characterized in that, The specific process of controlling the particle arrangement morphology using a low-stress deposition mode is as follows: In the low-stress deposition mode, the particle incident angle and deposition rate are graded and coordinated to control the accumulation of internal stress during the film growth process; combined with the preset interface guidance to constrain the stacking direction of the deposited particles, the deposition parameters are adjusted in real time to construct a particle arrangement structure on the silicon substrate film.

8. The method according to claim 1, characterized in that, The specific process of forming an intermediate transition film layer on the surface of the silicon substrate film layer, and simultaneously generating a process feedback trigger signal, is as follows: Based on the particle deposition energy and flux and the low-stress deposition mode, the deposited particles are continuously deposited and stacked on the surface of the silicon substrate film to generate the intermediate transition film. The deposition and forming state of the intermediate transition film is monitored in real time and compared with the preset deposition termination conditions to generate the process feedback trigger signal.

9. The method according to claim 1, characterized in that, The specific process of performing secondary chemical vapor deposition control based on the process feedback trigger signal is as follows: Upon receiving the process feedback trigger signal, the deposition process mode is switched and the current physical vapor deposition process is terminated, and the chemical vapor deposition control module is started; based on the surface structure characteristics of the intermediate transition film layer, the corresponding gas phase reaction parameters and deposition sequence are matched, and the secondary chemical vapor deposition control is executed.

10. The method according to claim 1, characterized in that, The specific process of adjusting the deposition uniformity control parameters according to the surface state of the intermediate transition film layer is as follows: The surface morphology and density distribution of the intermediate transition film are obtained. Based on the differences in surface state in different regions, the uniformity control parameters are adjusted in zones. At the same time, the surface state of the film is fed back in real time, and the adjustment range of the parameters is dynamically corrected.

11. The method according to claim 1, characterized in that, The specific process of constraining the coverage range of the film layer boundary using the full-domain encapsulation deposition method is as follows: The surface structure characteristics of the intermediate transition film are obtained, and the global coating deposition parameters that match the secondary chemical vapor deposition are set. The global uniform coating is achieved by adjusting the deposition gas flow distribution and the reaction source supply path. The extension trend of the film boundary is monitored in real time, and the deposition parameters are dynamically corrected.

12. The method according to claim 1, characterized in that, The specific process of forming a surface film layer on the outside of the intermediate transition film layer to generate a composite silicon film structure is as follows: Under the boundary constraints of full-domain encapsulation deposition, corresponding deposition reaction parameters are matched to deposit a surface film layer on the outside of the intermediate transition film layer; relying on the interfacial bonding characteristics between the film layers, the silicon substrate film layer, the intermediate transition film layer and the surface film layer are integrated into a composite structure to generate the composite silicon film structure.

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