A method and system for identifying a nano-etching accumulation region

Abstract

The application provides a method and system for identifying a nano-etching accumulation region. The method comprises the following steps: obtaining a single-row topography height sequence of a nano-etching structure, and identifying an etching region left boundary point and an etching region right boundary point based on the height sequence; identifying an accumulation highest point, and dividing the height sequence into a left data segment and a right data segment; performing nonlinear curve fitting on the topography height of the left data segment and the right data segment respectively, and obtaining a left fitting curve and a right fitting curve; determining a first intersection point of the left fitting curve and a preset reference height line, and a second intersection point of the right fitting curve and the reference height line; and determining a corrected accumulation region left boundary point and an accumulation region right boundary point according to the first intersection point and the second intersection point. The technical scheme provided by the application realizes high-precision automatic identification of the accumulation region boundary.

Description

Technical Field

[0001] This application relates to the field of nanofabrication and characterization technology, and in particular to a method and system for identifying nano-etched deposited regions. Background Technology

[0002] Nanoscale direct-write techniques, such as scanning probe etching, can directly fabricate complex nanostructures on the surfaces of various materials, offering irreplaceable advantages in research and development and small-batch production. To precisely control the feature dimensions (such as linewidth, depth, and sidewall morphology) of the fabricated nanostructures, accurate characterization and evaluation of the post-etching morphology are essential. During etching, the removed material (such as polymers) often re-accumulates on both sides of the trenches, forming raised "accumulation regions." These regions, together with the recessed "etched regions," constitute the complete nanoscale etching morphology. Therefore, accurate identification and measurement of the accumulation regions are as important as the identification of the etched regions, and are crucial for comprehensively evaluating etching quality, understanding material migration behavior, and ultimately optimizing process parameters.

[0003] Currently, even the few automated methods proposed for analyzing nano-etched morphology mainly focus on the identification and measurement of the etched trenches themselves (etched regions). These methods typically assume relatively gentle morphological changes and use linear fitting and other processing methods to determine the boundaries. However, due to the physical characteristics of material accumulation, the morphological contours of the deposited region often exhibit significant nonlinear features (such as approximately parabolic convexity). Directly applying linear fitting methods designed for etched regions to the deposited region can lead to significant deviations in boundary identification positions, severely reducing measurement accuracy. Specifically, existing technologies face the following prominent challenges: Insufficient method specificity: There is a lack of high-precision automatic identification algorithms specifically for nonlinear deposited morphologies. General boundary detection methods (such as fixed threshold methods and gradient methods) are sensitive to noise and have poor stability when dealing with gently changing edges in the deposited region. Unreliable identification results: Simple linear models cannot accurately describe the deposited contours, and forced application can lead to the identification of boundary points too early or too late, failing to truly reflect the lateral range of material accumulation, resulting in distortion of subsequent calculations of key parameters such as deposited width and volume. The algorithm lacks robustness: In actual experiments, due to process fluctuations or material inhomogeneity, atypical deposition morphologies may occur, or even deposition may be indistinct. Existing methods lack a mechanism for judging the validity of the identification results and for handling errors, and are prone to outputting obviously erroneous boundary values ​​under abnormal conditions, affecting the reliability of the entire automated process. Therefore, there is an urgent need to propose an automated method that can specifically, accurately, and robustly identify the boundaries of deposition regions in nano-etching, in order to make up for the key shortcomings in the existing morphology analysis technology chain, achieve complete feature extraction from etching to deposition, and lay a solid foundation for closed-loop optimization of nano-direct writing processes. Summary of the Invention

[0004] This application provides a method and system for identifying nano-etched deposited regions, which at least solves the technical problems of existing technologies, such as the lack of automated identification methods specifically for nonlinear deposited morphology, the inaccurate boundary identification caused by simply applying linear models, the lack of effective fault tolerance mechanisms, and the poor robustness of the algorithms.

[0005] A first aspect of this application provides a method for identifying nano-etched deposited regions, the method comprising:

[0006] Obtain the single-row topography height sequence of the nano-etched structure, and the left boundary point and right boundary point of the etched region identified based on the height sequence; Within the range defined by the left and right boundary points of the etched area, identify the point with the highest accumulation. Using the highest point of the stack as the boundary, the height sequence is divided into a left data segment and a right data segment; Nonlinear curve fitting is performed on the topography height of the left data segment and the right data segment respectively to obtain the left fitting curve and the right fitting curve; Based on the preset reference height line, the first intersection point of the left fitting curve and the reference height line and the second intersection point of the right fitting curve and the reference height line are determined respectively. Based on the first intersection point and the second intersection point, determine the corrected left boundary point and right boundary point of the accumulation region.

[0007] Preferably, the step of performing nonlinear curve fitting on the topography heights of the left and right data segments respectively includes: Quadratic curve fitting was performed on the topographic height of the left and right data segments respectively.

[0008] Furthermore, determining the first intersection point of the left fitted curve with the reference height line and the second intersection point of the right fitted curve with the reference height line based on the preset reference height line includes: Starting from the highest point of the stack, traverse the height sequence to the left and right respectively; During the process of traversing the height sequence to the left and right, the difference between the height value of the left fitted curve and the height value of the reference height line at the current traversal point on the left is calculated, and the difference between the height value of the right fitted curve and the height value of the reference height line at the current traversal point on the right is calculated. When the sign of the height difference value on the left changes, the current traversal point on the left is determined as the first intersection point; when the sign of the height difference value on the right changes, the current traversal point on the right is determined as the second intersection point.

[0009] Furthermore, the reference height line is obtained by linearly fitting the data of the unetched area outside the left and right boundary points of the etched area.

[0010] Furthermore, determining the corrected left boundary point and right boundary point of the accumulation region based on the first intersection point and the second intersection point includes: Determine whether the x-coordinate of the first intersection point is equal to the starting point of the height sequence, and / or determine whether the x-coordinate of the second intersection point is equal to the ending point of the height sequence; If the judgment result is yes, then the intersection point is determined to be invalid, and the left and right boundary points of the etched area are still used as the boundary points of the accumulation area. If the judgment result is negative, then the first intersection point and the second intersection point are taken as the corrected left boundary point and right boundary point of the accumulation region.

[0011] Furthermore, after determining the corrected left boundary point and right boundary point of the accumulation region, the process also includes: Obtain multiple feature region boundary values ​​corresponding to the height sequence. The feature region boundary values ​​include: the deepest etch position, the left boundary position of the half-width at half-height, the right boundary position of the half-width at half-height, the left position of the highest stacking point, the right position of the highest stacking point, the left boundary position of the etched region, and the right boundary position of the etched region. Verify whether the boundary values ​​of the multiple feature regions satisfy the preset inclusion hierarchy relationship; If the condition is not met, an abnormal identification flag will be output. The preset inclusion hierarchy relationship is as follows: The deepest etching location is located between the left boundary of the half-width and the right boundary of the half-width and height. The left and right boundary positions of the half-height and width are located between the left and right positions of the highest point of the stack; The highest point of the accumulation is located between the left and right boundaries of the etched area.

[0012] A second aspect of this application provides a system for identifying nano-etched deposited regions, comprising: The data acquisition module is used to acquire the single-row morphology height sequence of the nano-etched structure, as well as the left boundary point and right boundary point of the etched region identified based on the height sequence; The peak identification module is used to identify the point with the highest accumulation within the range determined by the left and right boundary points of the etched area; A segmentation module is used to divide the height sequence into a left data segment and a right data segment, with the highest point of the stack as the boundary; The fitting module is used to perform nonlinear curve fitting on the topography height of the left data segment and the right data segment respectively, to obtain the left fitting curve and the right fitting curve. The first determining module is used to determine, based on a preset reference height line, the first intersection point of the left fitting curve and the reference height line, and the second intersection point of the right fitting curve and the reference height line, respectively. The second determining module is used to determine the corrected left boundary point and right boundary point of the accumulation region based on the first intersection point and the second intersection point.

[0013] Preferably, the second determining module is further configured to: Determine whether the x-coordinate of the first intersection point is equal to the starting point of the height sequence, and / or determine whether the x-coordinate of the second intersection point is equal to the ending point of the height sequence; If the judgment result is yes, then the intersection point is determined to be invalid, and the left and right boundary points of the etched area are still used as the boundary points of the accumulation area. If the judgment result is negative, then the first intersection point and the second intersection point are taken as the corrected left boundary point and right boundary point of the accumulation region; The system also includes: an anomaly identification module; The anomaly identification module is used for: Obtain multiple feature region boundary values ​​corresponding to the height sequence. The feature region boundary values ​​include: the deepest etch position, the left boundary position of the half-width at half-height, the right boundary position of the half-width at half-height, the left position of the highest stacking point, the right position of the highest stacking point, the left boundary position of the etched region, and the right boundary position of the etched region. Verify whether the boundary values ​​of the multiple feature regions satisfy the preset inclusion hierarchy relationship; If the condition is not met, an abnormal identification flag will be output. The preset inclusion hierarchy relationship is as follows: The deepest etching location is located between the left boundary of the half-width and the right boundary of the half-width and height. The left and right boundary positions of the half-height and width are located between the left and right positions of the highest point of the stack; The highest point of the accumulation is located between the left and right boundaries of the etched area.

[0014] A third aspect of this application provides an electronic device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, it implements the method described in the first aspect embodiment.

[0015] A fourth aspect of this application provides a computer-readable storage medium having a computer program stored thereon that, when executed by a processor, implements the method described in the first aspect.

[0016] The technical solutions provided by the embodiments of this application bring at least the following beneficial effects: This application proposes a method and system for identifying nano-etched deposition regions. The method includes: acquiring a single-row morphological height sequence of the nano-etched structure, and identifying the left and right boundary points of the etching region based on the height sequence; identifying the highest point of deposition within the range determined by the left and right boundary points of the etching region; dividing the height sequence into a left data segment and a right data segment using the highest point of deposition as the boundary; performing nonlinear curve fitting on the morphological height of the left and right data segments respectively to obtain a left fitting curve and a right fitting curve; determining the first intersection point of the left fitting curve and the reference height line, and the second intersection point of the right fitting curve and the reference height line respectively, based on a preset reference height line; and determining the corrected left and right boundary points of the deposition region based on the first and second intersection points. The technical solution proposed in this application achieves high-precision and robust automatic identification of deposition region boundaries, providing key technical support for the comprehensive quantitative evaluation and optimization of nano-etching processes.

[0017] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0018] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 This is a flowchart illustrating a method for identifying nano-etched deposited regions according to an embodiment of this application; Figure 2 This is a first structural diagram of a nano-etched deposit region identification system provided according to an embodiment of this application; Figure 3 This is a second structural diagram of a nano-etched deposit region identification system provided according to an embodiment of this application. Detailed Implementation

[0019] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0020] This application proposes a method and system for identifying nano-etched deposition regions. The method includes: acquiring a single-row morphological height sequence of the nano-etched structure, and identifying the left and right boundary points of the etching region based on the height sequence; identifying the highest point of deposition within the range determined by the left and right boundary points of the etching region; dividing the height sequence into a left data segment and a right data segment using the highest point of deposition as the boundary; performing nonlinear curve fitting on the morphological height of the left and right data segments respectively to obtain a left fitting curve and a right fitting curve; determining the first intersection point of the left fitting curve and the reference height line, and the second intersection point of the right fitting curve and the reference height line respectively, based on a preset reference height line; and determining the corrected left and right boundary points of the deposition region based on the first and second intersection points. The technical solution proposed in this application achieves high-precision and robust automatic identification of deposition region boundaries, providing key technical support for the comprehensive quantitative evaluation and optimization of nano-etching processes.

[0021] The following describes a method and system for identifying nano-etched deposited regions according to embodiments of this application, with reference to the accompanying drawings.

[0022] Example 1 Figure 1 This is a flowchart of a method for identifying nano-etched deposited regions according to an embodiment of this application, as shown below. Figure 1 As shown, the method includes: Step 1: Obtain the single-row topography height sequence of the nano-etched structure, and the left boundary point and right boundary point of the etched region identified based on the height sequence; It should be noted that step 1 specifically includes: 1): Obtain the single-row topographic height sequence data, including position coordinates (x) and height value (h), as well as sequence length L. Simultaneously, obtain the left boundary point (x_litho_l, h_litho_l) and right boundary point (x_litho_r, h_litho_r) of the etched region, initially obtained by the etched region identification algorithm.

[0023] 2): Perform a linear fit on the data of the unetched area to obtain a highly fitted value h_1, which serves as a benchmark reference.

[0024] Step 2: Within the range defined by the left and right boundary points of the etched area, identify the point with the highest accumulation. It should be noted that the highest point (x_max, h_max) in the entire sequence is identified as the peak reference for the stacked region.

[0025] Step 3: Using the highest point of the stack as the boundary, divide the height sequence into a left data segment and a right data segment; Step 4: Perform nonlinear curve fitting on the topography height of the left data segment and the right data segment respectively to obtain the left fitting curve and the right fitting curve; In this embodiment of the disclosure, the nonlinear curve fitting of the topography height of the left and right data segments respectively includes: Quadratic curve fitting was performed on the topographic height of the left and right data segments respectively.

[0026] It should be noted that, taking the highest point as the boundary, the data on the left (x from x_litho_l to x_max) and the data on the right (x from x_max to x_litho_r) are respectively subjected to quadratic fitting to obtain the left fitting curve h_fit_l and the right fitting curve h_fit_r.

[0027] Step 5: Based on the preset reference height line, determine the first intersection point of the left fitting curve and the reference height line, and the second intersection point of the right fitting curve and the reference height line, respectively; In this embodiment of the disclosure, step 5 specifically includes: Starting from the highest point of the stack, traverse the height sequence to the left and right respectively; During the process of traversing the height sequence to the left and right, the difference between the height value of the left fitted curve and the height value of the reference height line at the current traversal point on the left is calculated, and the difference between the height value of the right fitted curve and the height value of the reference height line at the current traversal point on the right is calculated. When the sign of the height difference value on the left changes, the current traversal point on the left is determined as the first intersection point; when the sign of the height difference value on the right changes, the current traversal point on the right is determined as the second intersection point.

[0028] It should be noted that the reference height line is obtained by linearly fitting the data of the unetched area outside the left and right boundary points of the etched area.

[0029] It should be noted that for the left region, the process starts from the highest point x_max and traverses to the left, calculating the intersection point of the quadratic fitted curve and the baseline fitted curve h_1. Specifically, the difference between the fitted value and the baseline value is compared using a sign function until the intersection point x_litho_c_l is found. Similarly, the same process is performed on the right region to find the intersection point x_litho_c_r.

[0030] Step 6: Determine the corrected left boundary point and right boundary point of the accumulation region based on the first intersection point and the second intersection point.

[0031] In this embodiment of the disclosure, step 6 specifically includes: Determine whether the x-coordinate of the first intersection point is equal to the starting point of the height sequence, and / or determine whether the x-coordinate of the second intersection point is equal to the ending point of the height sequence; If the judgment result is yes, then the intersection point is determined to be invalid, and the left and right boundary points of the etched area are still used as the boundary points of the accumulation area. If the judgment result is negative, then the first intersection point and the second intersection point are taken as the corrected left boundary point and right boundary point of the accumulation region.

[0032] It should be noted that the intersection position is checked to see if it is within the valid range (i.e., x_litho_c_l is not equal to 1, and x_litho_c_r is not equal to L). If valid, the boundaries of the stacked region are updated to x_litho_l_new = x_litho_c_l and x_litho_r_new = x_litho_c_r; otherwise, the original etched region boundaries are preserved.

[0033] Return to the updated left and right boundary points of the etched area to complete the accurate identification of the accumulation area.

[0034] This algorithm overcomes the problem of nonlinear height morphology in the accumulation region through quadratic fitting, thereby improving the robustness of boundary recognition.

[0035] In this embodiment of the disclosure, after determining the corrected left boundary point and right boundary point of the stacking region, the method further includes: Obtain multiple feature region boundary values ​​corresponding to the height sequence. The feature region boundary values ​​include: the deepest etch position, the left boundary position of the half-width at half-height, the right boundary position of the half-width at half-height, the left position of the highest stacking point, the right position of the highest stacking point, the left boundary position of the etched region, and the right boundary position of the etched region. Verify whether the boundary values ​​of the multiple feature regions satisfy the preset inclusion hierarchy relationship; If the condition is not met, an abnormal identification flag will be output. The preset inclusion hierarchy relationship is as follows: The deepest etching location is located between the left boundary of the half-width and the right boundary of the half-width and height. The left and right boundary positions of the half-height and width are located between the left and right positions of the highest point of the stack; The highest point of the accumulation is located between the left and right boundaries of the etched area.

[0036] It should be noted that errors may occur during the feature region recognition process (such as boundary misjudgment due to noise signals), ensuring the reliability of the recognition results. Logical judgment is performed based on the inclusion relationships between various feature regions, with the following specific steps: Step F1: Input the boundary values ​​of the identified feature regions, including the deepest etch position x_min, the left half-width at half-height position x_FWHM_l, the right half-width at half-height position x_FWHM_r, the left highest stack position x_max_l, the right highest stack position x_max_r, the left boundary x_litho_l, and the right boundary x_litho_r of the etched region.

[0037] Step F2: Determine if these boundary values ​​satisfy the normal containment relationship: the deepest etched region x_min should be contained within the full width at half maximum (FWHM_l to x_FWHM_r); the FWHM should be contained within the region with the highest stack (x_max_l to x_max_r); the region with the highest stack should be contained within the etched region (x_litho_l to x_litho_r). That is, check the following conditions: x_litho_l ≤ x_max_l ≤ x_FWHM_l ≤ x_min ≤ x_FWHM_r ≤ x_max_r ≤ x_litho_r.

[0038] Step F3: If the condition is met, the identification area is normal; otherwise, the identification area is abnormal.

[0039] Output: Returns the status (normal or abnormal) of the identified area for subsequent processing reference.

[0040] Rapid anomaly detection is achieved through simple logical judgments, avoiding the impact of incorrect identification on subsequent analysis and enhancing the robustness of the overall system.

[0041] In summary, the proposed method for identifying nano-etched deposited regions addresses the issue of inaccurate identification by simple linear fitting methods, which are aimed at the nonlinear deposited morphology generated during scanning probe etching. Through a mechanism of "secondary fitting for refinement and backing up invalid results," it achieves high-precision and robust automatic identification of deposited region boundaries, providing key technical support for the comprehensive quantitative evaluation and optimization of nano-etching processes.

[0042] Example 2 Figure 2 This is a structural diagram of a nano-etched deposition region identification system according to an embodiment of this application, as shown below. Figure 2 As shown, the system includes: The data acquisition module 100 is used to acquire the single-row morphology height sequence of the nano-etched structure, as well as the left boundary point and right boundary point of the etched region identified based on the height sequence; The peak recognition module 200 is used to identify the point with the highest accumulation within the range determined by the left and right boundary points of the etched area; The segmentation module 300 is used to divide the height sequence into a left data segment and a right data segment, with the highest point of the stack as the boundary; The fitting module 400 is used to perform nonlinear curve fitting on the topography height of the left data segment and the right data segment respectively to obtain the left fitting curve and the right fitting curve. The first determining module 500 is used to determine, based on a preset reference height line, the first intersection point of the left fitting curve and the reference height line, and the second intersection point of the right fitting curve and the reference height line. The second determining module 600 is used to determine the corrected left boundary point and right boundary point of the stacking region based on the first intersection point and the second intersection point.

[0043] In this embodiment of the disclosure, the fitting module 400 is further configured to: Quadratic curve fitting was performed on the topographic height of the left and right data segments respectively.

[0044] In this embodiment of the disclosure, the first determining module 500 is further configured to: Starting from the highest point of the stack, traverse the height sequence to the left and right respectively; During the process of traversing the height sequence to the left and right, the difference between the height value of the left fitted curve and the height value of the reference height line at the current traversal point on the left is calculated, and the difference between the height value of the right fitted curve and the height value of the reference height line at the current traversal point on the right is calculated. When the sign of the height difference value on the left changes, the current traversal point on the left is determined as the first intersection point; when the sign of the height difference value on the right changes, the current traversal point on the right is determined as the second intersection point.

[0045] The reference height line is obtained by linearly fitting the data of the unetched area outside the left and right boundary points of the etched area.

[0046] In this embodiment of the disclosure, the second determining module 600 is further configured to: Determine whether the x-coordinate of the first intersection point is equal to the starting point of the height sequence, and / or determine whether the x-coordinate of the second intersection point is equal to the ending point of the height sequence; If the judgment result is yes, then the intersection point is determined to be invalid, and the left and right boundary points of the etched area are still used as the boundary points of the accumulation area. If the judgment result is negative, then the first intersection point and the second intersection point are taken as the corrected left boundary point and right boundary point of the accumulation region.

[0047] Furthermore, such as Figure 3 As shown, the system also includes: an anomaly identification module 700; The anomaly identification module 700 is used for: Obtain multiple feature region boundary values ​​corresponding to the height sequence. The feature region boundary values ​​include: the deepest etch position, the left boundary position of the half-width at half-height, the right boundary position of the half-width at half-height, the left position of the highest stacking point, the right position of the highest stacking point, the left boundary position of the etched region, and the right boundary position of the etched region. Verify whether the boundary values ​​of the multiple feature regions satisfy the preset inclusion hierarchy relationship; If the condition is not met, an abnormal identification flag will be output. The preset inclusion hierarchy relationship is as follows: The deepest etching location is located between the left boundary of the half-width and the right boundary of the half-width and height. The left and right boundary positions of the half-height and width are located between the left and right positions of the highest point of the stack; The highest point of the accumulation is located between the left and right boundaries of the etched area.

[0048] In summary, the nano-etching deposition region identification system proposed in this embodiment overcomes the problem of inaccurate identification by the simple linear fitting method for nonlinear deposition morphology generated during scanning probe etching. Through the mechanism of "secondary fitting for refinement and invalid result backoff", it achieves high-precision and high-robust automatic identification of deposition region boundaries, providing key technical support for the comprehensive quantitative evaluation and optimization of nano-etching processes.

[0049] Example 3 To implement the above embodiments, this disclosure also proposes an electronic device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, it implements the method described in Embodiment 1.

[0050] Example 4 To implement the above embodiments, this disclosure also proposes a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described in Embodiment 1.

[0051] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0052] Any process or method description in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or more executable instructions for implementing custom logic functions or processes, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.

[0053] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A method for identifying nano-etched deposited regions, characterized in that, The method includes: Obtain the single-row topography height sequence of the nano-etched structure, and the left boundary point and right boundary point of the etched region identified based on the height sequence; Within the range defined by the left and right boundary points of the etched area, identify the point with the highest accumulation. Using the highest point of the stack as the boundary, the height sequence is divided into a left data segment and a right data segment; Nonlinear curve fitting is performed on the topography height of the left data segment and the right data segment respectively to obtain the left fitting curve and the right fitting curve; Based on the preset reference height line, the first intersection point of the left fitting curve and the reference height line and the second intersection point of the right fitting curve and the reference height line are determined respectively. Based on the first intersection point and the second intersection point, determine the corrected left boundary point and right boundary point of the accumulation region.

2. The method as described in claim 1, characterized in that, The nonlinear curve fitting of the topography height of the left and right data segments respectively includes: Quadratic curve fitting was performed on the topographic height of the left and right data segments respectively.

3. The method as described in claim 2, characterized in that, The step of determining the first intersection point of the left fitting curve with the reference height line and the second intersection point of the right fitting curve with the reference height line based on the preset reference height line includes: Starting from the highest point of the stack, traverse the height sequence to the left and right respectively; During the process of traversing the height sequence to the left and right, the difference between the height value of the left fitted curve and the height value of the reference height line at the current traversal point on the left is calculated, and the difference between the height value of the right fitted curve and the height value of the reference height line at the current traversal point on the right is calculated. When the sign of the height difference value on the left changes, the current traversal point on the left is determined as the first intersection point; when the sign of the height difference value on the right changes, the current traversal point on the right is determined as the second intersection point.

4. The method as described in claim 3, characterized in that, The reference height line is obtained by linearly fitting the data of the unetched area outside the left and right boundary points of the etched area.

5. The method as described in claim 4, characterized in that, The step of determining the corrected left boundary point and right boundary point of the accumulation region based on the first intersection point and the second intersection point includes: Determine whether the x-coordinate of the first intersection point is equal to the starting point of the height sequence, and / or determine whether the x-coordinate of the second intersection point is equal to the ending point of the height sequence; If the judgment result is yes, then the intersection point is determined to be invalid, and the left and right boundary points of the etched area are still used as the boundary points of the accumulation area. If the judgment result is negative, then the first intersection point and the second intersection point are taken as the corrected left boundary point and right boundary point of the accumulation region.

6. The method as described in claim 5, characterized in that, After determining the corrected left and right boundary points of the accumulation region, the process further includes: Obtain multiple feature region boundary values ​​corresponding to the height sequence. The feature region boundary values ​​include: the deepest etch position, the left boundary position of the half-width at half-height, the right boundary position of the half-width at half-height, the left position of the highest stacking point, the right position of the highest stacking point, the left boundary position of the etched region, and the right boundary position of the etched region. Verify whether the boundary values ​​of the multiple feature regions satisfy the preset inclusion hierarchy relationship; If the condition is not met, an abnormal identification flag will be output. The preset inclusion hierarchy relationship is as follows: The deepest etching location is located between the left boundary of the half-width and the right boundary of the half-width and height. The left and right boundary positions of the half-height and width are located between the left and right positions of the highest point of the stack; The highest point of the accumulation is located between the left and right boundaries of the etched area.

7. A system for identifying nano-etched deposited regions based on the method for identifying nano-etched deposited regions according to any one of claims 1-6, characterized in that, The system includes: The data acquisition module is used to acquire the single-row morphology height sequence of the nano-etched structure, as well as the left boundary point and right boundary point of the etched region identified based on the height sequence; The peak identification module is used to identify the point with the highest accumulation within the range determined by the left and right boundary points of the etched area; A segmentation module is used to divide the height sequence into a left data segment and a right data segment, with the highest point of the stack as the boundary; The fitting module is used to perform nonlinear curve fitting on the topography height of the left data segment and the right data segment respectively, to obtain the left fitting curve and the right fitting curve. The first determining module is used to determine, based on a preset reference height line, the first intersection point of the left fitting curve and the reference height line, and the second intersection point of the right fitting curve and the reference height line, respectively. The second determining module is used to determine the corrected left boundary point and right boundary point of the accumulation region based on the first intersection point and the second intersection point.

8. The system as described in claim 7, characterized in that, The second determining module is also used for: Determine whether the x-coordinate of the first intersection point is equal to the starting point of the height sequence, and / or determine whether the x-coordinate of the second intersection point is equal to the ending point of the height sequence; If the judgment result is yes, then the intersection point is determined to be invalid, and the left and right boundary points of the etched area are still used as the boundary points of the accumulation area. If the judgment result is negative, then the first intersection point and the second intersection point are taken as the corrected left boundary point and right boundary point of the accumulation region; The system also includes: an anomaly identification module; The anomaly identification module is used for: Obtain multiple feature region boundary values ​​corresponding to the height sequence. The feature region boundary values ​​include: the deepest etch position, the left boundary position of the half-width at half-height, the right boundary position of the half-width at half-height, the left position of the highest stacking point, the right position of the highest stacking point, the left boundary position of the etched region, and the right boundary position of the etched region. Verify whether the boundary values ​​of the multiple feature regions satisfy the preset inclusion hierarchy relationship; If the condition is not met, an abnormal identification flag will be output. The preset inclusion hierarchy relationship is as follows: The deepest etching location is located between the left boundary of the half-width and the right boundary of the half-width and height. The left and right boundary positions of the half-height and width are located between the left and right positions of the highest point of the stack; The highest point of the accumulation is located between the left and right boundaries of the etched area.

9. An electronic device, characterized in that, include: A memory, a processor, and a computer program stored in the memory and capable of running on the processor, wherein the processor, when executing the program, implements the method as described in any one of claims 1-6.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the method as described in any one of claims 1-6.

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