Infrared light spot detection device, method and system

Abstract

The application discloses an infrared light spot detection device, method and system, and belongs to the fields of optoelectronic detection, organic semiconductor devices and computer vision technology. The detection device is an up-conversion device with an organic thin film cascade structure, and is sequentially provided with an ITO transparent anode, an electron transport / hole blocking layer, an infrared photosensitive layer, an interconnection layer / electron blocking layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode from top to bottom, and is packaged with an 8V-9V power supply module and a glass-glass ultraviolet curing adhesive sealing structure. The detection method irradiates the up-conversion device with infrared light spots, forms visible light intensity distribution through photon up-conversion, captures an image through a mobile terminal CMOS sensor, and then completes decoding, correction and quantization through an APP. The light spot area and power density are calculated based on the linear proportional relationship of a preset standard reference. The detection system is composed of the above device and the mobile terminal APP, realizes high-sensitivity detection of near-infrared and short-wave infrared band light spots, and can perform quantitative analysis on infrared light spots.

Description

Technical Field

[0001] This invention belongs to the fields of optoelectronic detection technology, organic semiconductor device physics and computer vision technology, and specifically relates to an infrared spot detection device, method and system. Background Technology

[0002] Infrared (IR) radiation, especially the near-infrared (NIR, 700-1400nm) and short-wave infrared (SWIR, 1400-3000nm) bands, plays a crucial role in modern technology. From beam detection in fiber optic communication and spot profile analysis in industrial laser processing to subcutaneous vein imaging and retinal imaging in biomedicine, infrared detection technology is ubiquitous. However, since the human eye cannot directly perceive infrared light, it must be converted into a visible image using specialized detection equipment.

[0003] Currently, mainstream high-performance infrared imaging systems are primarily based on inorganic semiconductor materials, such as indium gallium arsenide (IGa), mercury cadmium telluride (HCd), or quantum well infrared detectors. These detectors typically employ a focal plane array (FPA) and are physically connected to a silicon-based readout integrated circuit (ROIC) via indium bump bonding technology. The ROIC is the "brain" of the infrared imaging system, responsible for integrating, sampling, and converting the photocurrent generated by each pixel into a voltage signal sequence. However, the ROIC architecture faces significant technical and economic barriers, including extremely high manufacturing costs, complex cooling requirements, and technological embargoes and export restrictions.

[0004] In low-end applications (such as simple laser path calibration), rare-earth ion-doped upconversion nanoparticles (UCNPs) fluorescent cards (e.g., Er3+, Tm3+, Yb3+ doped NaYF4) are commonly used. This material utilizes the "anti-Stokes" effect, absorbing multiple low-energy infrared photons and transitioning to higher energy levels to emit a single visible photon. While these fluorescent cards are inexpensive and convenient, their physical mechanism has fundamental flaws. Their extremely low conversion efficiency creates a weak light detection blind zone, and the nonlinear response leads to distorted beam imaging, failing to accurately reflect the beam's power distribution. Therefore, they are completely unsuitable for precise beam analysis and measurement.

[0005] In recent years, organic semiconductor-based photoelectric upconversion devices (OUDs) have become a hot research topic. An OUD typically consists of an organic photodetector (OPD) unit and an organic light-emitting diode (OLED) unit stacked in series. Its working principle is as follows: Figure 1As shown: The infrared photosensitive layer absorbs infrared photons to generate charge carriers (electrons / holes), which are then directly injected into the emissive layer under the drive of an electric field to recombine and emit light. Compared to ROIC, OUD requires no pixelation circuitry, possessing "pixel-less imaging" capability. Its theoretical resolution is limited only by the lateral diffusion length of the charge carriers (typically in the micrometer range). Compared to rare-earth fluorescent cards, OUD is an active device (driven by an external power supply) with photoelectric gain. It not only boasts high conversion efficiency (reaching 1%-10% or more) but also exhibits linear response above the operating voltage, enabling it to detect weak light signals.

[0006] However, current OUD research is mostly still in the laboratory stage, often using high voltage (>10V or even >20V) drive, with insufficiently low detectable power threshold, and especially lacking integrated portable system design, and has not yet developed supporting quantitative analysis tools. Summary of the Invention

[0007] This invention provides an infrared spot detection device, method, and system to solve the technical problem of poor detection quality in existing infrared spot detection methods. This invention integrates optimized low-voltage OUD devices, a portable power supply, and intelligent algorithms. Through system integration, it transforms cutting-edge organic electronics technology into... Figure 2 The above is a practical civilian testing tool.

[0008] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0009] This invention provides, for example Figure 2 The infrared spot detection system shown comprises two main parts: hardware and software. Figure 2 yes Figure 3 The physical structure is reflected. Figure 3 It reflects Figure 2 The internal structure incorporates an infrared spot detection method (such as...) Figure 3 (As shown), the specific method is as follows:

[0010] Physical signal input: An invisible infrared laser / spot illuminates the surface of the up-conversion device.

[0011] Powered by a battery, near-infrared light undergoes a photon upconversion process within the upconversion device, converting near-infrared light into photogenerated carriers and then into visible light. Furthermore, the energy distribution of infrared photons (E...) IR The linear mapping of (x,y) is represented by the intensity distribution of visible photons (L... Vis (x,y)) and thus directly display the corresponding visible light signal on the up-conversion device, at which point the infrared spot information is visible to the naked eye.

[0012] To analyze the infrared spot information, optical data transmission (directly captured by a mobile device) can be used: the visible light image is transmitted through free space and captured by the visible light CMOS sensor of the mobile terminal. This process can be understood as "communication".

[0013] Digital signal processing (back-end APP processing): The mobile terminal APP decodes, corrects and quantizes the captured image, and finally outputs the physical parameters (area, power density) required by the user.

[0014] An infrared spot detection device is provided, the specific structure of which is as follows:

[0015] In terms of hardware, its core sensor adopts an up-conversion device with an all-organic thin-film cascade structure (its structural diagram is shown in Figure 1). Figure 4 (As shown). The device structure from top to bottom is as follows:

[0016] ITO (as a transparent anode, allowing infrared light to enter while visible light can pass through);

[0017] Electron transport / hole blocking layer (ETL / HBL) (materials are usually zinc oxide nanoparticles, etc., with a film thickness of about 40nm. Its function is to smooth the ITO surface, optimize the work function, facilitate the transport of electrons from the photosensitive layer to the cathode, and block undesirable holes injected by the external circuit).

[0018] Infrared photosensitive layer (IR Sensitizer Layer). The material is an organic photosensitive hybrid film with high quantum efficiency (the external quantum efficiency is greater than 70% at the peak in the NIR region when it is made into a detector diode alone), and its absorption spectrum can be extended to the SWIR band;

[0019] The interconnect / electron blocking layer (EBL) is typically made of TAPC and has a thickness of 20 nm. Alternatively, a TCTA-modified TAPC / TCTA bilayer can be used. Their function is to block electron leakage to the anode (reducing dark current) while allowing photogenerated holes to pass smoothly through and be injected into the emissive layer.

[0020] The emissive layer (EML) is composed of visible light emitting layer materials with an internal quantum efficiency that is theoretically close to 100%, ensuring that photogenerated holes and electrons injected from the cathode emit light efficiently here;

[0021] The electron transport layer (ETL), with a thickness of approximately 40 to 60 nm, serves to assist electron transport and adjust the length of the optical microcavity to enhance forward light emission.

[0022] The electron injection layer (EIL) is made of LiF (lithium fluoride) and has a thickness of approximately 1 nm. Its function is to significantly reduce the electron injection barrier of the aluminum cathode using the quantum tunneling effect, which is crucial for achieving low-voltage drive.

[0023] The cathode material is Al (aluminum), with a thickness of about 100nm. Its function is to reflect light and provide electrons. It can also be other transparent / semi-transparent electrodes (e.g., Al (10nm) / Au (5nm) / NPB (50nm)) to adjust the direction of visible light emission.

[0024] Interface matching and carrier transport optimization between functional layers, along with high photoelectric and electro-optic conversion efficiencies, enable efficient conversion of near-infrared light into visible light under low-voltage driving. A donor-acceptor blend film serves as the photosensitive layer, cascaded with an organic light-emitting layer via a hole transport layer. The overall structure is positioned between the carrier transport layer and the electrodes (one or both electrodes are transparent or semi-transparent, used for infrared light incident and visible light emitted), thus forming a highly sensitive active infrared detection and display component.

[0025] Furthermore, a standardized battery box (4xAA or 2xCR2032, etc.) is used to provide approximately 8V~9V DC power.

[0026] Furthermore, a glass-to-glass UV-curable encapsulation is used, filled with inert gas and a getter is placed inside to ensure the stability of the organic material in the natural environment.

[0027] On the software side, a dedicated application (App) for spot area calculation and quality analysis was designed. This solution utilizes the powerful computing capabilities of smartphones to replace expensive embedded DSP units. In the scale resolution stage, the algorithm automatically calculates the physical dimensions of the image based on a pre-set known physical scale on the device, using a proportional scaling algorithm. This algorithm is robust and can effectively handle spot edge blurring and background noise interference, ultimately outputting a relatively accurate area value.

[0028] The beneficial effects of this invention are as follows:

[0029] 1. This invention possesses a unique and highly efficient core mechanism: This invention employs a "linear photoelectric conversion combined with direct electroluminescence" as its core working mechanism. Unlike traditional infrared thermal imagers that rely on complex photoelectric conversion, ROIC readout, and screen display processes, and superior to rare-earth fluorescent cards based on the principle of nonlinear anti-Stokes fluorescence, this mechanism achieves highly efficient direct signal conversion, laying the foundation for the overall performance of the system.

[0030] 2. The highly competitive low-cost advantage of this invention: In terms of cost control, this invention demonstrates enormous market potential. Its manufacturing cost is low, and the unit price can be controlled within $100. Compared to traditional infrared thermal imagers that often cost over $1,000, this invention greatly lowers the barrier to entry for users, while its performance far surpasses that of inexpensive fluorescent cards costing tens of dollars, filling the gap in the mid-to-low-end high-performance market.

[0031] 3. This invention boasts exceptional portability and mobility: Its product form achieves a pocket-sized, lightweight design and is battery-powered. This completely eliminates the constraints of traditional bulky thermal imagers that require additional lens assemblies and handles. Furthermore, it is more proactive than passive fluorescent cards, making it ideal for mobile scenarios requiring inspection anytime, anywhere.

[0032] 4. High sensitivity with gain function: This invention possesses excellent detection sensitivity, reaching μW / cm². 2 The system has a built-in gain function and is available at a certain level. This invention, compared to systems requiring mW / cm², offers advantages in terms of gain. 2 The rare-earth fluorescent card, which requires extremely strong light to be excited, has seen an order-of-magnitude improvement in sensitivity, enabling it to effectively capture even weaker infrared signals.

[0033] 5. This invention combines intelligent quantitative analysis with an app: This invention not only has observation capabilities but also quantitative analysis capabilities. With the assistance of the accompanying app, users can accurately calculate data such as the area of ​​the light spot. This feature solves the pain point of traditional fluorescent cards, which can only rely on visual estimation and cannot obtain specific data, realizing a leap from "qualitative observation" to "quantitative calculation".

[0034] 6. The extremely simple user experience of this invention: Ease of operation is a major highlight of this invention; users only need to "take a picture with one click" to complete the test. Compared to the complex calibration and parameter modulation processes typically required by traditional precision equipment, the operation difficulty of this invention is greatly reduced, allowing even non-professionals to quickly learn and use it, significantly improving work efficiency.

[0035] 7. This invention achieves extremely high resolution by overcoming pixel limitations: In terms of imaging quality, this invention, based on a continuous thin-film structure, achieves extremely high resolution. Because there are no pixel grid limitations, it avoids the problem of traditional thermal imagers being limited by array pixel pitch, and is not affected by the particle size of fluorescent card powder, thus presenting more delicate and continuous high-quality images. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of the working principle of the conversion device in the prior art;

[0038] Figure 2 This is a schematic diagram illustrating the application scenario of the portable infrared spot detection system of the present invention;

[0039] Figure 3 This is a schematic diagram of the overall logic flow of the portable infrared spot detection system of the present invention;

[0040] Figure 4 This is a schematic diagram of the structure of the "infrared-visible light" direct upconversion imaging device based on organic semiconductor heterojunction in this invention;

[0041] Figure 5 This is a diagram showing the actual effect of the up-conversion device measuring the light spot in Embodiment 1 of the invention;

[0042] Figure 6 This is a flowchart illustrating the program design concept of Embodiment 3 of the present invention. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention are described in detail with reference to the device structure and material selection, and further explained with reference to the accompanying drawings.

[0044] Example 1

[0045] This embodiment details the physical structure and manufacturing process of the core optoelectronic device. This device is key to achieving "low cost and high sensitivity." The device is built on a pre-cleaned ITO (indium tin oxide) glass substrate. ITO acts as a transparent anode, allowing infrared light to enter while visible light is transmitted. The entire thin film stack thickness is less than 500 nm, and the specific structure from bottom to top is as follows:

[0046] Substrate and Anode: The material is glass / ITO, with a sheet resistance of no more than 20 ohms and a transmittance of more than 85% in the visible and near-infrared bands.

[0047] Furthermore, the electron transport / hole blocking layer (ETL / HBL), typically made of zinc oxide nanoparticles, has a film thickness of approximately 40 nm. Its function is to smooth the ITO surface, optimize the work function, facilitate electron transport from the photosensitive layer to the cathode, and simultaneously block undesirable holes injected by the external circuit.

[0048] Further, an infrared photosensitive layer (IRSensitizer Layer) is used. The material is D18 / BTP-ec9, applied using a layer-by-layer spin-coating technique. BTP-ec9 exhibits a strong near-infrared absorption peak (700-900 nm), while D18 is responsible for energy level matching, simultaneously forming a nanoscale interpenetrating network. This significantly increases the exciton dissociation interface area, enabling full dissociation of photogenerated excitons and providing ample charge carriers. The film thickness is typically approximately 60 to 200 nm. For detection in longer wavelength ranges (>1000 nm), an alternative is a blend of the non-fullerene acceptor COTIC-4F and the polymer PCE10, whose absorption spectrum can be extended to the SWIR band.

[0049] Furthermore, the interconnect / electron blocking layer (EBL) is typically made of TAPC (1,1-bis[N,N-di(4-tolyl)amino]phenyl]cyclohexane) with a thickness of 20 nm. Alternatively, a TCTA-modified TAPC / TCTA bilayer can be used. Their function is to block electron leakage to the anode (reducing dark current) while allowing photogenerated holes to pass smoothly through and be injected into the emissive layer.

[0050] Furthermore, the emissive layer (EML) is made of CBP:Ir(ppy)₂acac (8wt%), with a thickness of approximately 30 nm. Its function is to ensure efficient energy transfer through the host-guest system of CBP:Ir(ppy)₂acac, and the highly efficient green phosphorescent dye Ir(ppy)₂acac can utilize triplet excitons, theoretically achieving a quantum efficiency of 100%. Photogenerated holes recombine with electrons injected from the cathode in this layer, emitting strong green light with a wavelength of approximately 520 nm, the wavelength to which the human eye is most sensitive.

[0051] Furthermore, the electron transport layer (ETL) is made of TPBi (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene), with a thickness of approximately 40 to 60 nm. Its function is to assist electron transport and adjust the length of the optical microcavity to enhance forward light emission.

[0052] Furthermore, the electron injection layer (EIL) material is LiF (lithium fluoride), with a thickness of approximately 1 nm. Its role is to significantly reduce the electron injection barrier of the aluminum cathode using the quantum tunneling effect, which is key to achieving low-voltage drive.

[0053] Furthermore, the cathode material is Al (aluminum), with a thickness of approximately 100 nm, and its function is to reflect light and provide electrons.

[0054] Among them, the application of upswitching devices with D18 / BTP-ec9 as the photosensitizing layer is as follows: Figure 5 As shown, its function of converting near-infrared light into visible green light was verified (the effective area of ​​the device is a rectangle of 2.5cm × 1.6cm, and the green part is the incident near-infrared light spot pattern (850nm, 30mW / cm²). 2 The lowest power that can be displayed is approximately 15 μW / cm. 2 ).

[0055] Example 2

[0056] This embodiment primarily introduces a portable power supply (i.e., a portable power module) and its packaging structure. To achieve true "portability," the power system must be freed from the large source meters found in laboratories. Specifically: Option A (Ultra-thin): Uses three CR2032 lithium manganese button batteries in series. Each battery has a voltage of 3V, resulting in a total of 9V. Its advantage is its extremely small size, allowing it to be integrated into a card-type casing. Option B (Long-lasting): Uses six AAA alkaline batteries in series. The total voltage is 9V, with a capacity of approximately 1500mAh, enabling continuous operation for tens of hours.

[0057] Furthermore, a battery protection and regulation module was designed, specifically focusing on LDO voltage regulation: the battery voltage decreases as it discharges (8V->6V), leading to unstable upconversion brightness and affecting quantitative calculations. A low-power, low-dropout linear regulator (such as the XC6206) is integrated into the circuit to stabilize the voltage at 8.0V, ensuring test consistency. Simultaneously, current-limiting protection is added by connecting a 50Ω PTC thermistor in series to prevent short circuits from causing battery overheating.

[0058] Furthermore, encapsulation is added. Organic materials are extremely sensitive to water and oxygen (which quench excitons and corrode electrodes). First, UV curing is used for encapsulation. In a glove box (water and oxygen content <0.1ppm), a UV-curable adhesive (e.g., Nagase XNR) is applied to the device edges. Next, a cover plate is attached, covering the device with a clean glass cover. Then, a getter is used to attach CaO moisture-absorbing patches to non-light-emitting areas to absorb residual moisture. Finally, UV exposure is used, i.e., irradiating the edge-curing adhesive with a 365nm UV lamp. This process ensures a significantly increased device lifespan under normal atmospheric conditions.

[0059] Example 3:

[0060] In a preferred embodiment of the present invention, an area measurement method based on mobile terminal visual recognition is proposed, the overall design of which is as follows: Figure 6 As shown. This method pre-sets a standard reference element inside the optical system under test to automatically calibrate the image pixel coordinate system with the physical world coordinate system. The specific implementation steps are as follows:

[0061] First, a standard reference component is established to construct a pre-defined reference system. Within the observation plane of the infrared spot detection device, a specific geometric marker is set as the standard reference component. Feature definition: The standard reference component is configured as a pure black (high-absorbency material) square block, with its physical side length preset to a fixed value x (unit: cm). Then its known physical area S... ref_real =x 2 Optical layout: The standard reference is located on the same focal plane or adjacent plane as the target spot to ensure that both have the same scale factor during imaging.

[0062] Further, the image acquisition and preprocessing steps: The user takes a picture of the area containing the standard reference and the light spot to be tested through the image acquisition unit of a mobile terminal (such as a smartphone) to obtain the original digital image.

[0063] Furthermore, the original image is subjected to grayscale conversion and Gaussian filtering to suppress image noise and smooth jagged edges.

[0064] Further, the reference feature extraction and calibration step aims to accurately locate the black square in the image and establish a mapping relationship between pixels and physical size. First, binarization segmentation is performed using an adaptive thresholding algorithm or the Otsu algorithm to segment the image into foreground and background. Since the reference is pure black, candidate regions are extracted by setting a low grayscale threshold range. Next, geometric filtering is performed, using contour retrieval on the candidate regions and filtering based on geometric features. Filtering conditions include: closure: the contour must be closed; shape factor: the contour's rectangularity is close to 1, and its aspect ratio is close to 1:1; area threshold: noise regions with excessively small areas are excluded. Finally, pixel statistics are performed, locking the unique contour that meets the above conditions as the standard reference, and calculating the total number of pixels contained within this contour, denoted as N. _ref (Unit: Pixel).

[0065] Further, the test spot is segmented and measured. First, a color space conversion is performed: the original image is converted from RGB space to HSV (Hue-Saturation-Value) color space to eliminate interference from uneven ambient light intensity on color recognition. Next, a color gamut mask is applied. For the specific spectral characteristics of the test spot (e.g., green), threshold ranges (e.g., H...) are set for the H, S, and V channels. min ~H maxThis process generates a binary mask image of the light spot. Finally, connected component calculations are performed, and morphological closing is applied to the mask image to fill any holes inside the light spot. The total number of pixels in all connected components of the light spot region is then calculated, denoted as N. _spot (Unit: Pixel).

[0066] Furthermore, the physical area is calculated. Based on the monocular vision pinhole imaging model, and ignoring lens distortion or correcting for distortion, the actual physical area S of the light spot to be measured is calculated using a linear scaling relationship. spot_real The calculation model is as follows:

[0067] ;

[0068] Where, N _spot N represents the pixel area of ​​the light spot. _ref Let x represent the pixel area of ​​the black reference square, and x be the preset side length of the reference square. The final calculation result is displayed numerically through the human-computer interaction interface (GUI) of the mobile terminal.

[0069] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope described in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. An infrared spot detection device, characterized in that, include: The up-conversion device adopts an all-organic thin-film cascade structure, consisting of, from top to bottom, an ITO transparent anode, an electron transport / hole blocking layer, an infrared photosensitive layer, an interconnect layer / electron blocking layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode; Portable power supply module for providing stable 8V~9V DC power; The encapsulation structure uses glass-to-glass UV-curable adhesive, is filled with inert gas, and contains a getter.

2. The infrared spot detection device according to claim 1, characterized in that, The electron transport / hole blocking layer is made of zinc oxide nanoparticle material, and the film thickness is 10~40nm. The infrared photosensitive layer is an organic photosensitive hybrid film, selected from D18 / BTP-ec9 layer-by-layer spin-coated film or COTIC-4F and PCE10 blend film, with a film thickness of 60~200nm. The interconnect layer / electron blocking layer is a single TAPC layer or a TCTA-modified TAPC / TCTA double layer with a thickness of 10~30nm.

3. The infrared spot detection device according to claim 1, characterized in that, The light-emitting layer adopts a host-guest system of CBP:Ir(ppy)2acac(8wt%) and has a thickness of 20~30nm; The electron transport layer is made of TPBi material with a thickness of 40~60nm; The electron injection layer is a LiF thin film with a thickness of 1 nm; The cathode is an Al electrode or an Al / Au / NPB composite transparent electrode with a thickness of 10~100nm.

4. The infrared spot detection device according to claim 1, characterized in that, The portable power supply module is selected from three CR2032 lithium manganese button batteries in series or six AAA alkaline batteries in series, and is equipped with an XC6206 low dropout linear regulator and a 50Ω PTC thermistor to achieve voltage stabilization at 8.0V with voltage limiting protection.

5. An infrared spot detection method, used to execute the infrared spot detection device according to any one of claims 1-4, characterized in that, Includes the following steps: Physical signal input: Infrared light spot illuminates the surface of the upper conversion device; Photon upconversion: Driven by a portable power supply module, infrared light undergoes a linear conversion from infrared light to photogenerated carriers and then to visible light via an upconversion device, forming a visible light intensity distribution that corresponds to the infrared photon energy distribution. Optical data transmission: Visible light images are captured by the CMOS sensor of the mobile terminal and displayed on the up-conversion device; Digital signal processing: The mobile terminal APP decodes, corrects and quantizes the image, and outputs parameters such as spot area and power density.

6. The infrared spot detection method according to claim 5, characterized in that, The digital signal processing includes: construction of a preset standard reference, image acquisition and preprocessing, feature extraction and calibration of the reference, segmentation and measurement of the light spot to be measured, and physical area calculation. The standard reference is a pure black square block with a preset physical side length, which is set on the same focal plane or adjacent plane of the light spot to be measured.

7. The infrared spot detection method according to claim 6, characterized in that, Image preprocessing includes grayscale conversion and Gaussian filtering; The reference part feature extraction uses an adaptive threshold algorithm or Otsu algorithm for binarization segmentation, and combines contour retrieval and geometric screening to lock the reference part and count the number of pixels; The light spot segmentation is performed by converting the RGB color space to the HSV color space, using color gamut masking and morphological closing operations, and then counting the number of light spot pixels.

8. The infrared spot detection method according to claim 6, characterized in that, The physical area calculation is based on a linear proportional relationship, and the specific formula is as follows: ； Where, N _spot N represents the pixel area of ​​the light spot. _ref Let S be the pixel area of ​​the black reference square, x be the preset side length of the reference square, and S be the pixel area of ​​the black reference square. ref_real =x 2 Given the physical area; S spot_real To calculate the actual physical area of ​​the light spot under test using a linear proportional relationship, the final calculation result is displayed numerically through the human-computer interaction interface of a mobile terminal.

9. An infrared spot detection system, characterized in that, Including an infrared spot detection device according to any one of claims 1-4 and a mobile terminal APP; The mobile terminal APP has functions of image capture, preprocessing, feature extraction, spot segmentation, parameter calculation, and result display; The detection system achieves linear conversion from near-infrared light to visible light through an up-conversion device, and completes quantitative analysis of light spots by combining visual recognition with a mobile terminal APP.

10. An infrared spot detection system according to claim 9, characterized in that, The detection system has a detection sensitivity at the μW / cm² level, detects near-infrared and short-wave infrared light spots, supports one-click shooting operation, outputs light spot area and power density parameters, and the imaging resolution is not limited by pixel grid.

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