Mass transfer substrate and method of manufacturing the same
By configuring a light-absorbing layer and a bonding layer on a mass transfer substrate, laser energy is absorbed and blocked by a patterned photoresist barrier, thus solving the problem of photoresist layer deformation caused by excessive laser irradiation, improving process yield and transfer accuracy, and enhancing process flexibility.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- AU OPTRONICS CORP
- Filing Date
- 2026-03-09
- Publication Date
- 2026-05-29
AI Technical Summary
In existing mass transfer processes, the adhesive layer on the target substrate is prone to deformation due to excessive laser irradiation, causing some components to stick back to the substrate of the mass transfer substrate, reducing the process yield.
A light-absorbing layer and a bonding layer are configured on a mass transfer substrate. The light-absorbing layer absorbs laser energy to avoid excessive irradiation of the adhesive layer on the target substrate. Combined with a patterned photoresist barrier layer to block the laser, the device is transferred accurately.
It effectively improves the yield of mass transfer processes, avoids component misalignment or sticking back to the substrate, increases process flexibility, and eliminates the need for frequent mask changes.
Smart Images
Figure CN122121571A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a mass transfer substrate and its manufacturing method. Background Technology
[0002] Mass transfer technology uses laser irradiation to photodissociate materials to complete the mass transfer of multiple components. However, the adhesive layer on the target substrate is prone to deformation due to excessive laser irradiation, and some components may even be stuck back to the substrate of the mass transfer substrate, which greatly reduces the process yield. Summary of the Invention
[0003] This invention provides a mass transfer substrate and its manufacturing method, which effectively improves the yield of mass transfer processes.
[0004] According to one embodiment of the present invention, a mass transfer substrate is provided, suitable for mass transferring multiple components, and includes a substrate layer, multiple bonding layers, and a light-absorbing layer. The bonding layers are arranged in an array on the substrate layer, wherein the components are bonded to the substrate layer through the bonding layers. The light-absorbing layers are disposed on the substrate layer and located between the bonding layers. The bonding layers are made of the same material as the light-absorbing layers and are adapted to detach from the substrate layer upon exposure to light.
[0005] According to an embodiment of the present invention, a method for manufacturing a mass transfer substrate is provided. The mass transfer substrate is suitable for mass transfer of multiple components, and the manufacturing method includes disposing a photodissociation layer on a substrate layer; disposing the components on the photodissociation layer; disposing a patterned photoresist layer on the photodissociation layer; and removing a portion of the photodissociation layer to form a plurality of bonding layers between the components and the substrate layer, and a light-absorbing layer located between the bonding layers.
[0006] Based on the above, the mass transfer substrate manufactured according to an embodiment of the present invention includes a light-absorbing layer disposed between multiple components. Accordingly, in the mass transfer process, part of the laser energy can be absorbed by the light-absorbing layer without excessively irradiating the adhesive layer on the target substrate, thus preventing deformation of the adhesive layer and avoiding some components from sticking back to the substrate layer of the mass transfer substrate.
[0007] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below, and detailed descriptions are provided in conjunction with the accompanying drawings. Attached Figure Description
[0008] Figures 1A to 1E A method for manufacturing a mass transfer substrate according to a first embodiment of the present invention is shown.
[0009] Figures 2A to 2F A method for manufacturing a mass transfer substrate according to a second embodiment of the present invention is shown.
[0010] Figures 3A to 3DThe process of transferring multiple components using a mass transfer substrate manufactured according to the first embodiment is illustrated.
[0011] Figures 4A to 4D The process of transferring multiple components using a mass transfer substrate manufactured according to the second embodiment is shown.
[0012] Figure 5A as well as Figure 5B The mass transfer process according to a comparative example is shown.
[0013] Figure 6A as well as Figure 6B The process of transferring multiple components using a mass transfer substrate manufactured according to the first embodiment is illustrated.
[0014] Figure 7A as well as Figure 7B The process of transferring multiple components using a mass transfer substrate manufactured according to the second embodiment is shown.
[0015] Explanation of reference numerals in the attached figures: 1: Mass transfer substrate 2: Mass transfer substrate BL: Bonding layer D1: Distance D2: Distance D3: Distance EM: Component GL: Adhesive layer LB: Photoresist barrier LB1: Patterned photoresist barrier LD: Photodissociation layer LL: Laser LS: Light Absorption Layer LS1: Part 1 LS2: Part Two PR: Photoresist layer PR1: Patterned photoresist layer SB0: Basal layer SB1: Basal layer SB2: Basal layer SB3: Basal layer W1: Width W2: Width Detailed Implementation
[0016] Reference Figures 1A to 1E This illustrates a method for manufacturing a mass transfer substrate according to a first embodiment of the present invention.
[0017] like Figure 1A as well as Figure 1BAs shown, a photodissociation layer LD is disposed on a substrate layer SB1, and a plurality of devices EM are disposed on the photodissociation layer LD using a substrate layer SB0; and a photoresist layer PR is disposed on the photodissociation layer LD and the devices EM. In some embodiments, the photodissociation layer LD comprises a polymeric adhesive material, but is not limited thereto.
[0018] like Figure 1C As shown, a patterned photoresist layer PR1 is formed using an exposure and development process.
[0019] like Figure 1D As shown, by using an etching process, a photodissociation layer LD corresponding to the patterned photoresist layer PR1 is removed from the pattern, exposing a portion of the surface of the substrate layer SB1 to form multiple bonding layers BL between the components EM and the substrate layer SB1, and a light-absorbing layer LS located between the bonding layers BL.
[0020] like Figure 1E As shown, the patterned photoresist layer PR1 is removed to form a mass transfer substrate 1 suitable for mass transfer of the devices EM. The mass transfer substrate 1 includes a base layer SB1, bonding layers BL, and a light-absorbing layer LS. The bonding layers BL are arranged in an array on the base layer SB1, and the devices EM are bonded to the base layer SB1 through the bonding layers BL. The light-absorbing layer LS is disposed on the base layer SB1 and located between the bonding layers BL. Figures 1A to 1E The method for manufacturing a mass transfer substrate shown in the diagram uses the same material for the bonding layers BL and the light-absorbing layer LS, and they are on the same surface of the base layer SB1.
[0021] To fully illustrate the various embodiments of the present invention, other embodiments will be described below. It must be noted that the following embodiments use the same component reference numerals and some content as those in the foregoing embodiments, with the same reference numerals representing the same or similar components, and descriptions of identical technical content omitted. For explanations of the omitted parts, please refer to the foregoing embodiments; these will not be repeated in the following embodiments.
[0022] Reference Figures 2A to 2F This illustrates a method for manufacturing a mass transfer substrate according to a second embodiment of the present invention.
[0023] like Figure 2A as well as Figure 2B As shown, a photodissociation layer LD is disposed on a substrate SB1, and multiple components EM are disposed on the photodissociation layer LD using a substrate SB0; and a photoresist layer PR is disposed on the photodissociation layer LD and the components EM.
[0024] like Figure 2B as well as Figure 2CAs shown, a patterned photoresist layer PR1 is formed using an exposure and development process, and part of the photodissociation layer LD is exposed by the patterned photoresist layer PR1.
[0025] like Figure 2D As shown, a photoresist barrier layer LB is formed on a patterned photoresist layer PR1 and a portion of the exposed photodissociation layer LD. In some embodiments, the photoresist barrier layer LB comprises a metal thin film material compatible with photolithography, or comprises a resin.
[0026] like Figure 2E As shown, the patterned photoresist layer PR1 is removed, and a portion of the photoresist barrier LB on the patterned photoresist layer PR1 is removed to form the patterned photoresist barrier LB1.
[0027] like Figure 2F As shown, using an etching process, a photodissociation layer LD corresponding to the patterned photoresist barrier layer LB1 is used to expose a portion of the surface of the substrate layer SB1, thereby forming multiple bonding layers BL between the devices EM and the substrate layer SB1, and a light-absorbing layer LS located between the bonding layers BL, thus completing a mass transfer substrate 2 suitable for mass transfer of the devices EM. The mass transfer substrate 2 includes the substrate layer SB1, the bonding layers BL, the light-absorbing layer LS, and the patterned photoresist barrier layer LB1. The bonding layers BL are arranged in an array on the substrate layer SB1, and the devices EM are bonded to the substrate layer SB1 through the bonding layers BL. The light-absorbing layer LS is disposed on the substrate layer SB1 and located between the bonding layers BL. The patterned photoresist barrier layer LB1 is disposed on the side of the light-absorbing layer LS away from the substrate layer SB1. Figures 2A to 2F The method for manufacturing a mass transfer substrate shown describes a method where the bonding layers BL and the light-absorbing layer LS are made of the same material and are on the same surface of the base layer SB1. Furthermore, the patterned photoresist barrier layer LB1 directly contacts the light-absorbing layer LS. However, the invention is not limited thereto; in some embodiments, other layers or materials may be disposed between the patterned photoresist barrier layer LB1 and the light-absorbing layer LS.
[0028] Reference Figures 3A to 3D It illustrates the process of transferring these components EM using a mass transfer substrate 1.
[0029] like Figures 3A to 3B As shown, the components EM on the mass transfer substrate 1 are transferred to the substrate SB2 by irradiation with, for example, a laser LL. The bonding layers BL and the light absorption layer LS are detached from the substrate SB1 due to the irradiation of the laser LL. Because the bonding layers BL and the light absorption layer LS are separately disposed, they do not pull on each other during the transfer to the substrate SB2, thus preventing the components EM from deviating from their predetermined positions.
[0030] like Figure 3C As shown, the bonding layer BL and the light-absorbing layer LS are removed using an etching process.
[0031] And, as Figure 3D As shown, the substrate SB3 picks up part of the component EM, thus completing the goal of transferring part of the component EM to the substrate SB2.
[0032] It should be noted that, in Figure 3A In the process shown, part of the energy of the laser LL can be absorbed by the light-absorbing layer LS of the mass transfer substrate 1, and will not directly irradiate the adhesive layer (not shown) on the substrate layer SB2 after penetrating the substrate layer SB1. In contrast, please refer to... Figure 5A as well as Figure 5B This illustrates a mass transfer process according to a comparative example. In this comparative example, no light-absorbing layer LS is provided on the substrate SB1. Part of the laser LL penetrates the substrate SB1 and directly irradiates the adhesive layer GL on the substrate SB2, causing deformation of the adhesive layer GL. This causes the components EM to shift from their predetermined positions, and some components EM are even stuck back onto the substrate SB1, resulting in mass transfer failure. It should also be noted that when the distance D1 between adjacent components EM is greater than or equal to 30 µm, the aforementioned adhesive layer deformation will be more severe. Therefore, according to some embodiments of the present invention, in... Figure 1E In the mass transfer substrate 1 shown, a light absorption layer LS is disposed between two adjacent elements EM that are 30 µm apart. In other words, the distance D2 between the two elements EM adjacent to the light absorption layer LS is greater than or equal to 30 µm. Preferably, the width W1 of the light absorption layer LS can be configured to satisfy condition 1 / 3. D2 < W1 < 0.98 D2, to provide sufficient energy shielding.
[0033] Reference Figures 4A to 4D This illustrates a process for mass-transferring these components (EMs) using a mass transfer substrate 2. For example... Figures 4A to 4B As shown, the components EM on the mass transfer substrate 2 are transferred to the substrate layer SB2 by irradiation with laser LL. The bonding layer BL, the light absorption layer LS, and the patterned photoresist barrier layer LB1 are detached from the substrate layer SB1 due to irradiation by laser LL. Figure 4C As shown, the bonding layer BL and the light-absorbing layer LS are removed using an etching process; and, as Figure 4D As shown, the substrate SB3 picks up part of the component EM, thus completing the goal of transferring part of the component EM to the substrate SB2.
[0034] It should be noted that, in Figure 4AIn the process shown, part of the energy of the laser LL can be absorbed by the light-absorbing layer LS of the mass transfer substrate 2, or blocked by the patterned photoresist barrier layer LB1, without excessively irradiating the adhesive layer (not shown) on the substrate layer SB2. Therefore, it will not cause the adhesive layer on the substrate layer SB2 to undergo the process shown. Figure 5B The deformation shown can prevent the component EM from sticking back to the substrate layer SB1.
[0035] According to some embodiments of the present invention, in Figure 2F In the mass transfer substrate 2 shown, a light absorption layer LS and a patterned photoresist barrier layer LB1 are disposed between two adjacent elements EM that are at least 30 µm apart. In other words, the distance D3 between the two elements EM adjacent to the light absorption layer LS and the patterned photoresist barrier layer LB1 is at least 30 µm. Preferably, the width W2 of the patterned photoresist barrier layer LB1 can be configured to satisfy condition 1 / 3. D3 < W2 < 0.98 D3 is used to provide sufficient energy shielding. Furthermore, the width of the light absorption layer LS can be slightly smaller than the width W2 of the patterned photoresist barrier layer LB1, with the difference between the two falling below 6µm.
[0036] Reference Figure 6A as well as Figure 6B It illustrates a process for transferring these components EM using a mass transfer substrate 1, wherein... Figure 6A This illustrates the first illumination stage of the mass transfer process. Figure 6B This illustrates the second illumination stage of the mass transfer process.
[0037] In this embodiment, the first portion LS1 of the light-absorbing layer LS is irradiated by the laser LL during the first illumination stage and detaches from the substrate layer SB1, while the second portion LS2, which is not irradiated by the laser LL, remains on the substrate layer SB1. The second portion LS2 of the light-absorbing layer LS is irradiated by the laser LL during the second illumination stage and detaches from the substrate layer SB1. In other words, the light-absorbing layer LS can undergo localized fracture due to illumination. The mass transfer substrate 1 manufactured according to this embodiment can be used with various types of laser LLs without frequent mask changes, greatly improving process freedom.
[0038] Reference Figure 7A as well as Figure 7B It illustrates a process for transferring these components EM using a mass transfer substrate 2, wherein... Figure 7A This illustrates the first illumination stage of the mass transfer process. Figure 7B This illustrates the second illumination stage of the mass transfer process.
[0039] In this embodiment, the first portion LS1 of the light-absorbing layer LS is irradiated by the laser LL during the first illumination stage, while the second portion LS2 is not irradiated by the laser LL. Therefore, the light-absorbing layer LS and the patterned photoresist barrier layer LB1 do not detach from the substrate layer SB1. When the second portion LS2 of the light-absorbing layer LS is irradiated by the laser LL during the second illumination stage, the light-absorbing layer LS and the patterned photoresist barrier layer LB1 detach from the substrate layer SB1. In other words, the mass transfer substrate 2 manufactured according to this embodiment can be used with various types of laser LLs without frequent mask changes, greatly improving process freedom.
[0040] In summary, the mass transfer substrate manufactured according to embodiments of the present invention includes a light-absorbing layer disposed between multiple components and a patterned photoresist barrier layer. Accordingly, in the mass transfer process, part of the laser energy can be absorbed by the light-absorbing layer or blocked by the patterned photoresist barrier layer, preventing excessive irradiation of the photoresist layer on the target substrate. Therefore, deformation of the photoresist layer can be avoided, preventing some components from sticking back to the substrate layer of the mass transfer substrate, and eliminating the need for frequent mask replacements.
Claims
1. A mass transfer substrate, suitable for transferring multiple components, comprising: basal layer; Multiple bonding layers are arranged in an array on the substrate layer, wherein the multiple elements are bonded to the substrate layer through the multiple bonding layers; as well as A light-absorbing layer is disposed on the substrate layer and located between the plurality of bonding layers. The plurality of bonding layers are made of the same material as the light-absorbing layer and are adapted to detach from the substrate layer after being irradiated by light.
2. The mass transfer substrate as claimed in claim 1, wherein the plurality of bonding layers are separate from the light absorption layer.
3. The mass transfer substrate of claim 1, wherein the plurality of bonding layers and the light absorption layer are disposed on the same surface of the substrate layer.
4. The mass transfer substrate of claim 1, wherein the distance between two elements adjacent to the light absorption layer is greater than or equal to 30 µm.
5. The mass transfer substrate as claimed in claim 4, wherein the width of the light absorption layer conforms to condition 1 / 3. D2 < W1 < 0.98 D2, W1 is the width of the light-absorbing layer, and D2 is the distance between the two elements adjacent to the light-absorbing layer.
6. The mass transfer substrate as claimed in claim 1 further includes a photoresist barrier layer disposed on the side of the light absorption layer away from the substrate layer.
7. The mass transfer substrate as claimed in claim 6, wherein the photoresist barrier layer directly contacts the light absorption layer.
8. The mass transfer substrate of claim 6, wherein the width of the photoresist barrier layer conforms to condition 1 / 3. D3 < W2 < 0.98 D3 and W2 are the widths of the photoresist barrier, and D3 is the distance between two elements adjacent to the photoresist barrier.
9. The mass transfer substrate of claim 1, wherein the light absorption layer comprises a first portion and a second portion, and the first portion and the second portion are adapted to detach from the substrate layer at different illumination stages.
10. A method for manufacturing a mass transfer substrate, the mass transfer substrate being adapted for mass transfer of multiple components, and the manufacturing method comprising: A photodissociation layer is disposed on a substrate layer; The plurality of elements are disposed on the photodissociation layer; A patterned photoresist layer is disposed on the photodissociation layer; as well as A portion of the photodissociation layer is removed to form a plurality of bonding layers between the plurality of elements and the substrate layer, and a light-absorbing layer located between the plurality of bonding layers.
11. The manufacturing method of claim 10, further comprising: This exposes a portion of the surface of the base layer.
12. The manufacturing method of claim 10, further comprising: A photoresist barrier is formed on the patterned photoresist layer and the photodissociation layer in the portion exposed by the patterned photoresist layer; as well as Remove the patterned photoresist layer and remove a portion of the photoresist barrier on the patterned photoresist layer to form a patterned photoresist barrier.