Substrate processing apparatus and method

Abstract

The application provides a substrate processing device and method, the substrate processing device comprises a processing cavity, a fluid supply pipeline, a pressure boosting pipeline, a displacement pipeline and an exhaust pipeline, the processing cavity is provided with a pressure boosting port, a displacement port and an exhaust port, the fluid supply pipeline comprises a first pipeline and a second pipeline arranged in series, the first pipeline comprises a first branch and a second branch arranged in parallel, a pressure relief pipeline is arranged on the second pipeline, one end of the pressure boosting pipeline is connected with the second pipeline, the other end is connected with the pressure boosting port, the pressure boosting pipeline comprises a third branch and a fourth branch arranged in parallel, one end of the displacement pipeline is connected with the second pipeline, the other end is connected with the displacement port, and a sixth on-off valve is arranged on the displacement pipeline. The substrate processing device can effectively configure the supercritical fluid flow rate during pressure boosting and drying in the drying process, is used for coping with different surface patterns of the substrate, and the ability of coping with different substrates during drying is increased.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a substrate processing apparatus and method. Background Technology

[0002] In the process of cleaning substrates such as semiconductor wafers, it is necessary to treat the surface patterns of the substrates with chemical solutions. After cleaning, the substrates need to be dried. As chip manufacturing processes have been continuously increasing in recent years, high aspect ratio chips mean that the requirements for drying processes are becoming more and more stringent. Existing drying processes can no longer meet the needs of some high-process chips. Supercritical fluids have been continuously verified in recent years. Due to their near-zero surface tension, they can effectively suppress the collapse of wafer surface patterns during the drying process.

[0003] However, existing semiconductor processing equipment can only provide a single, fixed flow rate of supercritical fluid during actual operation. If the substrate being dried requires a different flow rate of supercritical fluid due to changes in the preceding process, this equipment cannot meet the demand. Therefore, existing semiconductor processing equipment is highly targeted and only meets the drying process requirements that require the same flow rate of supercritical fluid, which has certain limitations. Summary of the Invention

[0004] The present invention provides a substrate processing apparatus and method that can solve the problem that existing semiconductor processing equipment can only meet the requirements of supercritical fluid drying process at the same flow rate.

[0005] The technical solution adopted by the present invention to solve its technical problem is as follows: The first aspect of the present invention provides a substrate processing apparatus, comprising:

[0006] The processing chamber is equipped with a pressure boosting port, a displacement port, and an exhaust port; A fluid supply pipeline includes a first pipeline and a second pipeline connected in series. The first pipeline includes a first branch and a second branch connected in parallel. The first branch is provided with a first on-off valve and a first flow limiter. The second branch is provided with a second on-off valve. The second pipeline is provided with a pressure relief pipeline and a third on-off valve. The booster pipeline has one end connected to the second pipeline and the other end connected to the booster port. It includes a third branch and a fourth branch arranged in parallel. The third branch is equipped with a fourth on-off valve and a fourth flow restrictor, and the fourth branch is equipped with a fifth on-off valve and a fifth flow restrictor. The fourth flow restrictor and the fifth flow restrictor have different diameters. The replacement pipeline has one end connected to the second pipeline and the other end connected to the replacement port. A sixth on / off valve is installed on the replacement pipeline. An exhaust pipe is connected to the exhaust port and is used for exhausting air.

[0007] In one embodiment, a second flow limiter is provided on the second pipeline, and a third flow limiter is provided on the pressure relief pipeline.

[0008] In one embodiment, the supercritical fluid supply pipeline is provided with a pressure measuring element, a safety valve, and a filter, which are sequentially arranged between the first pipeline and the second pipeline.

[0009] In one embodiment, there are two displacement ports and two exhaust ports.

[0010] In one embodiment, an electrically adjustable valve is provided on the exhaust pipe, the electrically adjustable valve being used to dynamically adjust the opening degree according to the pressure in the reaction chamber to maintain a supercritical state.

[0011] In one embodiment, the exhaust pipeline includes a seventh on / off valve and a third pipeline connected in series. The third pipeline includes a fifth branch and a sixth branch connected in parallel. An electric regulating valve and an eighth on / off valve are provided on the fifth branch, and a ninth on / off valve is provided on the sixth branch.

[0012] In one embodiment, the exhaust pipe further includes a fourth pipe connected to the replacement port, the outlet end of the fourth pipe being connected to the pipe between the seventh on / off valve and the third pipe, and a tenth on / off valve V10 is provided on the fourth pipe.

[0013] In one embodiment, a gas heater is provided on the second pipeline, and a mass flow meter is provided on the exhaust pipeline.

[0014] In one embodiment, the processing chamber, the fluid supply line, the booster line, the displacement line, and the exhaust line are all provided with a temperature control structure. The temperature control structure is used to maintain the temperature of the processing chamber, the fluid supply line, the booster line, the displacement line, and the exhaust line within a preset range.

[0015] In one embodiment, the temperature control structure includes a heating structure, a temperature sensor, and a controller. The temperature sensor and the heating structure are both electrically connected to the controller. The temperature sensor is used to acquire the temperature, and the controller is used to control the start and stop of the heating structure according to the temperature.

[0016] A second aspect of the present invention provides a substrate processing method using the substrate processing apparatus described above, the method comprising the following steps: Open the first or second on / off valve, open the third or fourth on / off valve, or open the fifth on / off valve to allow the supercritical fluid to enter the processing chamber at a restricted flow rate. Close the third on / off valve to allow supercritical fluid to enter the processing chamber until it reaches supercritical pressure. Close the fourth and fifth on / off valves and open the sixth on / off valve to allow supercritical fluid to flow in from the displacement port to replace the liquid on the substrate surface. Close the sixth on / off valve, and release pressure to normal pressure in stages through the main exhaust pipe and the main exhaust pipe combined with the bypass exhaust pipe.

[0017] In one embodiment, the diameter of the fourth flow limiter is smaller than that of the fifth flow limiter. The opening of the first, second, third, fourth, or fifth on / off valves allows the supercritical fluid to enter the processing chamber at a limited flow rate. When the chip process on the substrate is greater than 7nm but less than 14nm or the IPA dosage is greater than 10ml, a combination of opening the first and fifth on / off valves, or a combination of opening the second and fifth on / off valves, is used. When the chip process on the substrate is less than or equal to 7nm or the amount of IPA is less than or equal to 10ml, a combination of opening the first and fourth opening and closing valves, or a combination of opening the second and fourth opening and closing valves, is adopted.

[0018] In one embodiment, during the process of closing the fourth and fifth on / off valves and opening the sixth on / off valve to allow supercritical fluid to flow in from the replacement port and replace the liquid on the substrate surface in a laminar flow state, the exhaust opening is dynamically adjusted by an electric regulating valve to maintain the pressure in the processing chamber at 16MPa±1MPa.

[0019] In one embodiment, the method further includes: independently controlling the temperature of the processing chamber, the fluid supply line, the pressure boosting line, the displacement line, and the exhaust line, so that the temperature of the processing chamber, the fluid supply line, the pressure boosting line, the displacement line, and the exhaust line is between 80°C and 160°C.

[0020] The substrate processing apparatus provided by the present invention includes a processing chamber, a fluid supply pipeline, a pressure boosting pipeline, a displacement pipeline, and an exhaust pipeline. The processing chamber is provided with a pressure boosting port, a displacement port, and an exhaust port. The fluid supply pipeline includes a first pipeline and a second pipeline connected in series. The first pipeline includes a first branch and a second branch connected in parallel. The first branch is provided with a first on-off valve and a first flow limiter. The second branch is provided with a second on-off valve. The second pipeline is provided with a pressure relief pipeline and a third on-off valve. One end of the pressure boosting pipeline is connected to the second pipeline, and the other end is connected to the pressure boosting port. The pressure boosting pipeline includes a third branch and a fourth branch connected in parallel. The third branch is provided with a fourth on-off valve and a fourth flow limiter. The fourth branch is provided with a fifth on-off valve and a fifth flow limiter. The fourth and fifth flow limiters have different diameters. One end of the displacement pipeline is connected to the second pipeline, and the other end is connected to the displacement port. The displacement pipeline is provided with a sixth on-off valve. The exhaust pipeline is connected to the exhaust port for exhaust. This substrate processing device, through the parallel connection of the first and second branches of the first pipeline in the fluid supply pipeline and the parallel connection of the third and fourth branches of the pressurization pipeline, can effectively configure the supercritical fluid flow rate during pressurization and drying in the drying process, in order to cope with substrates with different surface patterns, increase the ability to dry different substrates, and improve production efficiency. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the pipeline principle of the substrate processing apparatus provided in an embodiment of the present invention; Figure 2 A schematic diagram of supercritical fluid flow during the slow pressurization stage of the substrate drying process provided in an embodiment of the present invention; Figure 3 A schematic diagram of supercritical fluid flow during the rapid pressurization stage of the substrate drying process provided in an embodiment of the present invention; Figure 4 A schematic diagram of supercritical fluid flow during the flow displacement stage of the substrate drying process provided in an embodiment of the present invention; Figure 5 This is a schematic diagram of supercritical fluid flow during the exhaust and depressurization stage of the substrate drying process provided in an embodiment of the present invention. Figure 6 This is a schematic diagram of the supercritical fluid flow during the two-stage exhaust and depressurization process of the substrate drying process provided in an embodiment of the present invention. Figure 7This is a schematic diagram of the supercritical fluid flow during the three stages of degassing and depressurization in the substrate drying process provided in an embodiment of the present invention. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0024] In the description of this invention, it should be understood that the terms “comprising” and “having” as used herein, and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0025] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.

[0026] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. It should be understood that the term "and / or" as used herein is merely a description of the relationship between related objects, indicating that three relationships may exist; for example, A and / or B can represent: A alone, A and B simultaneously, and B alone. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0027] In the process of cleaning substrates such as semiconductor wafers, it is necessary to treat the surface patterns of the substrates with chemical solutions. After cleaning, the substrates need to be dried. As chip manufacturing processes have been continuously increasing in recent years, high aspect ratio chips mean that the requirements for drying processes are becoming more and more stringent. Existing drying processes can no longer meet the needs of some high-process chips. Supercritical fluids have been continuously verified in recent years. Due to their near-zero surface tension, they can effectively suppress the collapse of wafer surface patterns during the drying process.

[0028] Existing equipment can only provide a single, fixed flow rate of supercritical carbon dioxide during actual operation, which cannot be changed. If the substrate being dried requires supercritical carbon dioxide at a different flow rate due to changes in the preceding process, this equipment cannot meet its needs. Therefore, existing equipment is highly targeted, only meeting the drying process requirements of substrates that require the same flow rate of supercritical carbon dioxide, and has certain limitations. This application addresses the above problems by providing a substrate processing apparatus and method.

[0029] The substrate processing apparatus and method provided by the present invention will be described in detail below with reference to specific embodiments.

[0030] Figure 1 Please refer to the schematic diagram of the pipeline principle of the substrate processing apparatus provided in the embodiment of the present invention. Figure 1 As shown, a first aspect of the present invention provides a substrate processing apparatus including a processing chamber 1, a fluid supply pipeline 2, a boosting pipeline 3, a displacement pipeline 4, and an exhaust pipeline 5: the processing chamber 1 is provided with a boosting port 11, a displacement port 12, and an exhaust port 13; the fluid supply pipeline 2 includes a first pipeline 21 and a second pipeline 22 arranged in series, the first pipeline including a first branch and a second branch arranged in parallel, the first branch being provided with a first on-off valve V1 and a first flow limiter OF1, the second branch being provided with a second on-off valve V2, the second pipeline being provided with a pressure relief pipeline 23, and the pressure relief pipeline 23 being provided with a third on-off valve V2. Valve V3; One end of the booster pipe 3 is connected to the second pipe 22, and the other end is connected to the booster port 11. It includes a third branch and a fourth branch arranged in parallel. The third branch is equipped with a fourth on-off valve V4 and a fourth flow restrictor OF4. The fourth branch is equipped with a fifth on-off valve V5 and a fifth flow restrictor OF5. The fourth flow restrictor OF4 and the fifth flow restrictor OF5 have different diameters. One end of the displacement pipe 4 is connected to the second pipe 22, and the other end is connected to the displacement port 12. A sixth on-off valve V6 is provided on the displacement pipe 4. The exhaust pipe 5 is connected to the exhaust port 13 and is used for exhaust.

[0031] The substrate processing apparatus in this embodiment is mainly a device for drying wafers. In this embodiment, the wafer drying process primarily utilizes supercritical fluid. The main purpose of using supercritical fluid to dry the wafer is to prevent the patterns on the wafer surface from collapsing due to surface tension during the drying process, thereby improving the yield of chip manufacturing. Supercritical fluid carbon dioxide, due to its low viscosity, high diffusivity, and low surface tension, can quickly penetrate into the tiny gaps on the wafer surface, dissolving organic contaminants (such as photoresist residue and metal ions) and carrying away particulate impurities. In this embodiment, carbon dioxide particles are used as the supercritical fluid; however, other supercritical fluids with superior performance can also be used.

[0032] The processing chamber 1 of this embodiment is used to accommodate the substrate to be processed and is provided with a pressure boosting port 11, a displacement port 12, and an exhaust port 13. Exemplarily, a substrate holding tray for holding the substrate is provided inside the processing chamber 1. The processing chamber 1 of this embodiment includes two inlets, namely the pressure boosting port 11 and the displacement port 12. The chamber is filled with supercritical fluid through the pressure boosting port 11. After the fluid in the processing chamber 1 reaches a supercritical state, the pressure boosting port 11 is closed, and the displacement port 12 is opened to stably provide supercritical fluid for displacement with the liquid on the substrate surface. Preferably, in this embodiment, there are two displacement ports 12 and two exhaust ports 13. A single displacement port 12 can easily lead to uneven flow of supercritical carbon dioxide in the chamber, resulting in a large difference in drying rate between the substrate edge and center, which may cause pattern collapse or residue. In this embodiment, both displacement ports 12 are opened simultaneously during the displacement process, enabling high-speed and uniform displacement. Similarly, providing two exhaust ports 13 makes the exhaust process more uniform.

[0033] In this embodiment, the fluid supply pipeline 2 includes a first pipeline 21 and a second pipeline 22 connected in series. The first pipeline 21 includes a first branch and a second branch connected in parallel. The first branch is provided with a first on-off valve V1 and a first flow limiter OF1. The second branch is provided with a second on-off valve V2. The second pipeline 22 is provided with a pressure relief pipeline 23 and a third on-off valve V3. One end of the booster pipe 3 is connected to the second pipe 22, and the other end is connected to the booster port 11. The booster pipe 3 includes a third branch and a fourth branch arranged in parallel. The third branch is equipped with a fourth on-off valve V4 and a fourth flow limiter OF4, and the fourth branch is equipped with a fifth on-off valve V5 and a fifth flow limiter OF5. The fourth flow limiter OF4 and the fifth flow limiter OF5 have different diameters. The substrate drying process can be divided into slow pressurization and rapid pressurization according to the pressure in the processing chamber 1. In this embodiment, the first branch is equipped with a first on-off valve V1 and a first flow limiter OF1, the second branch is equipped with a second on-off valve V2, and the second pipe 22 is equipped with a pressure relief pipe 23. During the slow pressurization stage, the flow rate of the supercritical fluid can be stably and effectively adjusted by using the first on-off valve V1 and the first flow limiter OF1 on the first branch and opening the third on-off valve V3 on the pressure relief pipe 23. In this embodiment, the fourth flow limiter OF4 and the fifth flow limiter OF5 have different diameters. During the slow pressurization phase, by opening the flow limiter with the smaller diameter, the flow rate of the supercritical fluid can be further adjusted to achieve a more ideal slow pressurization.

[0034] In this embodiment, the parallel connection of the first on-off valve V1 and the second on-off valve V2, with the first and second on-off valves V1 and V2 opening in stages, limits the gas flow rate during the slow pressurization stage, reducing the collapse of the substrate surface pattern. The parallel connection of the fourth on-off valve V4 and the fifth on-off valve V5 provides the substrate processing apparatus with more options for the slow and rapid pressurization stages. For example, the slow pressurization stage can use the first on-off valve V1 and the fourth on-off valve V4, or the first on-off valve V1 and the fifth on-off valve V5; the rapid pressurization stage can use the second on-off valve V2 and the fourth on-off valve V4, or the second on-off valve V2 and the fifth on-off valve V5. All four configurations can adjust the CO2 flow rate during the slow and rapid pressurization stages, and can be adjusted according to the front-end processes of the substrate to adapt to different operating conditions.

[0035] This embodiment can select different configurations based on the varying amounts of IPA covering the substrate surface and the differences in the substrate's aspect ratio. For example, the current limiting aperture of the fourth current limiter OF4 is smaller than that of the fifth current limiter OF5. When the chip on the substrate uses a process greater than 7nm but less than 14nm, or when the IPA usage is greater than 10ml, the slow boost stage and the rapid boost stage can employ the opening methods of the first on / off valve V1 and the fifth on / off valve V5, or the second on / off valve V2 and the fifth on / off valve V5. When the chip on the substrate uses a process less than or equal to 7nm, or when the IPA usage is less than or equal to 10ml, the slow boost stage and the rapid boost stage can employ the opening methods of the first on / off valve V1 and the fourth on / off valve V4, or the second on / off valve V2 and the fourth on / off valve V4.

[0036] This embodiment utilizes a parallel connection scheme of the first and second branches of the first pipeline 21 in the fluid supply pipeline 2 and a parallel connection scheme of the third and fourth branches of the pressure boosting pipeline 3. This allows for the effective configuration of the supercritical fluid flow rate during the pressure boosting and drying processes, enabling the application to substrates with different surface patterns. This increases the ability to handle different substrates and improves production efficiency.

[0037] Furthermore, a second flow limiter OF2 is installed on the second pipeline 22 in this embodiment. The second flow limiter OF2 in this embodiment can control the fluid velocity and pressure gradient. Supercritical carbon dioxide needs to operate under precise high pressure (>7.38 MPa) and temperature (>31.1°C) conditions. The second flow limiter OF2 in this embodiment limits the flow rate to prevent a sudden drop in local pressure due to excessive flow velocity, thereby preventing carbon dioxide from unexpectedly exiting the supercritical state (e.g., changing to a gaseous or liquid state), ensuring process consistency. During the drying process, carbon dioxide needs to gradually replace the solvent. The flow limiter controls the flow rate to form a stable pressure gradient, preventing physical damage to the wafer structure (e.g., micropattern collapse) due to sudden pressure changes. The second flow limiter OF2 in this embodiment also prevents two-phase flow. If the carbon dioxide flow rate is too high, a phase change (e.g., supercritical state → gaseous state) may occur in the pipeline expansion region due to a sudden pressure drop, forming a gas-liquid two-phase flow. The second flow limiter OF2 ensures that carbon dioxide always passes through the system in a single-phase supercritical state by limiting the flow rate, reducing the interference of bubble generation on the drying effect. In this embodiment, the pressure relief pipeline 23 is also equipped with a third flow limiter OF3. During the slow pressurization stage, by opening the third on / off valve V3 and the third flow limiter OF3, the situation where the pattern on the substrate surface is overturned due to excessively fast carbon dioxide flow can be further limited.

[0038] In this embodiment, the second pipeline 22 is provided with a temperature and pressure measuring element 6, a safety valve 7 and a filter 8, which are arranged sequentially along the fluid flow path.

[0039] The temperature and pressure sensing element 6 in this embodiment can accurately measure the pressure of supercritical carbon dioxide in the pipeline. For example, during the replacement phase, it ensures that the pressure is always maintained in a supercritical state and determines when to switch from slow pressure increase to rapid pressure increase (e.g., closing the third on / off valve V3 when the pressure reaches 5 MPa). For example, an alarm is triggered when the pressure is abnormal (e.g., >20 MPa) to intervene in advance and prevent the pipeline from bursting. In this embodiment, when the pressure sensing element or control system fails, the safety valve acts as the last line of defense, automatically opening to release pressure when the pressure exceeds a set threshold (e.g., 22 MPa) to prevent equipment explosion. The filter 8 in this embodiment can filter solid impurities in carbon dioxide (e.g., pipeline rust particles, pump wear debris), preventing solid impurities from clogging the flow restrictor. Since the substrate chip is extremely sensitive to particles when fabricated at 7nm~14nm, the filter 8 can prevent contamination of the wafer surface, which could lead to short circuits in the device. Taking the pressurization stage as an example, carbon dioxide flows into the pipeline and is first purified by filter 8 to ensure the fluid is clean. Temperature and pressure measuring element 6 monitors the pressure in real time. If it is normal (e.g., 10 MPa), the system continues to pressurize. If it is abnormal (e.g., 30 MPa), an alarm is triggered and the pump source is shut off. Safety valve 7 is in standby mode and will only activate when both temperature and pressure measuring element 6 and electric valve fail, thus physically depressurizing.

[0040] The exhaust pipe 5 in this embodiment includes a seventh on / off valve V7 and a third pipe connected in series. The third pipe includes a fifth branch and a sixth branch connected in parallel. The fifth branch is equipped with an electric regulating valve BV and an eighth on / off valve V8, and the sixth branch is equipped with a ninth on / off valve V9. In this embodiment, the exhaust pipe 5 uses the parallel fifth and sixth branches. During the flow-through stage, exhaust is performed through the fifth branch. The electric regulating valve BV is a dynamically adjustable electric valve. The electric regulating valve BV can dynamically adjust its opening according to the carbon dioxide pressure inside the processing chamber 1, ensuring that the pressure inside the processing chamber 1 is maintained in a supercritical state.

[0041] In this embodiment, an electric regulating valve BV is installed on the exhaust pipe 5. The electric regulating valve BV is used to dynamically adjust the opening degree according to the pressure in the processing chamber 1 to maintain the supercritical state. A temperature and pressure measuring element 6 is installed on the fifth branch of this embodiment. The electric regulating valve BV receives the signal from the temperature and pressure measuring element 6 in real time and dynamically adjusts the opening degree (0~100%) to stabilize the pressure at the set value ±0.5 MPa by controlling the exhaust flow rate. For example, when the electric regulating valve BV detects that the pressure drops to near the critical value (e.g., 8 MPa), it automatically closes the opening degree to reduce the exhaust volume and allow the pressure to rise again.

[0042] In this embodiment, a gas heater 9 is installed on the second pipeline 22, and a mass flow meter 10 is installed on the exhaust pipeline 5. The gas heater 9 ensures that the carbon dioxide is maintained at a supercritical temperature in the supply pipeline. The mass flow meter 10 in this embodiment can accurately monitor the exhaust flow rate and form a closed-loop control with the electric regulating valve BV. For example, the mass flow meter 10 measures the flow rate of carbon dioxide in the exhaust pipeline 5 in real time and transmits the signal to the controller. The controller compares the measured value of the flow meter with the set value, calculates the deviation, and uses a PID algorithm (proportional-integral-derivative) to generate a regulation command, which outputs a signal to drive the electric regulating valve BV.

[0043] Supercritical fluids experience heat loss when flowing through pipes, and during exhaust, the transition from high pressure to low pressure involves heat absorption (which can lead to condensation and freezing of the pipes in severe cases). Therefore, temperature control of the supply and exhaust pipes 5 is essential. In this embodiment, the processing chamber 1, fluid supply pipe 2, pressure boosting pipe 3, displacement pipe 4, and exhaust pipe 5 are all equipped with temperature control structures to maintain the pipe temperatures within a set range. For example, the processing chamber 1 can be temperature-controlled using a heating device (not limited to a heating rod or heating wire), while the fluid supply pipe 2, pressure boosting pipe 3, displacement pipe 4, and exhaust pipe 5 are temperature-controlled using heating jackets (such as...). Figure 1 Temperature control is achieved by setting temperature control structures on the fluid supply line 2, the boost line 3, and the displacement line 4. This ensures that the temperature of carbon dioxide entering the processing chamber 1 remains consistent, reducing heat loss caused by the external environment and the flow of carbon dioxide in the lines. This setting can preferentially reduce particles generated during the substrate drying process and reduce the collapse of the substrate surface pattern (preventing carbon dioxide from losing its supercritical state due to temperature loss, which would affect the insufficient dissolution of IPA in supercritical carbon dioxide, and IPA residue would easily lead to the generation of particles on the substrate surface).

[0044] Preferably, the set temperature range of the temperature control structure is 80°C to 160°C. The temperature control structure includes a heating structure and a temperature sensor, which are electrically connected. Exemplarily, the temperature control structure includes a heating structure, a temperature sensor, and a controller. Both the temperature sensor and the heating structure are electrically connected to the controller. The temperature sensor is used to acquire the temperature, and the controller is used to control the activation and deactivation of the heating structure based on the temperature.

[0045] The substrate processing apparatus of this embodiment can divide the substrate drying process into the following six stages according to the pressure in the processing chamber 1: slow pressurization, rapid pressurization, flow displacement, exhaust pressure relief one, exhaust pressure relief two, and exhaust pressure relief three. The above six stages can be achieved by controlling the opening and closing of different on / off valves in the pipeline, as specifically implemented as follows: Figure 2 For a schematic diagram of the supercritical fluid flow during the slow pressurization stage of the substrate drying process provided in this embodiment of the invention, please refer to [link / reference]. Figure 2 As shown, during the slow pressurization phase, the first on / off valve V1, or the second on / off valve V2, the third on / off valve V3, the fourth on / off valve V4, or the fifth on / off valve V5 are opened, while the other valves are closed. At this time, the flow path of carbon dioxide in the pipeline is as follows: Figure 2 The path is thickened. During the slow pressurization process, the high-pressure carbon dioxide supplied by the liquid carbon dioxide supply unit will rapidly flow to the low-pressure side. In this embodiment, to limit the impact of excessively rapid carbon dioxide flow on the substrate surface pattern, a first flow limiter OF1, a second flow limiter OF2, a third flow limiter OF3, a fourth flow limiter OF4, and a fifth flow limiter OF5 are installed in the pipeline to restrict the flow. The orifice size corresponding to different flow limit points is different. The third on / off valve V3 is used to allow some gas to escape, which can limit the impact of excessively rapid carbon dioxide flow on the substrate surface pattern.

[0046] Figure 3 For a schematic diagram of the supercritical fluid flow during the rapid pressurization stage of the substrate drying process provided in an embodiment of the present invention, please refer to [link / reference needed]. Figure 3 As shown, after the slow pressurization phase, the third on / off valve V3 is closed. At this time, the flow path of carbon dioxide in the pipeline is as follows: Figure 3 The high-pressure carbon dioxide supplied by the liquid carbon dioxide supply unit flows entirely into processing chamber 1, causing a rapid increase in pressure within chamber 1. When the carbon dioxide in processing chamber 1 reaches supercritical pressure (greater than 7.4 MPa), the IPA on the substrate surface begins to dissolve in the supercritical carbon dioxide. At this point, the pressure continues to increase until the carbon dioxide in processing chamber 1 can be maintained in a supercritical state, with a pressure value of approximately 16 MPa.

[0047] Figure 4 Please refer to the schematic diagram of supercritical fluid flow during the flow displacement stage of the substrate drying process provided in this embodiment of the invention. Figure 4 As shown, when the pressure inside processing chamber 1 reaches the aforementioned supercritical maintaining pressure, the fourth on / off valve V4 or the fifth on / off valve V5 is closed, and the sixth on / off valve V6, the seventh on / off valve V7, and the eighth on / off valve V8 are opened. At this time, the flow path of carbon dioxide in the pipeline is as follows: Figure 4 The path is thickened. Carbon dioxide begins to flow dynamically within the processing chamber 1, flowing from the substrate surface in a laminar flow state to dissolve and dry the IPA on the substrate surface. The electric regulating valve BV is an electric valve with dynamically adjustable opening. During this stage, the electric regulating valve BV is dynamically adjusted according to the carbon dioxide pressure in the processing chamber 1 (the pressure measured by the fifth branch temperature and pressure measuring element 6) to ensure that the pressure in the processing chamber 1 is maintained in a supercritical state.

[0048] Figure 5 For a schematic diagram of the supercritical fluid flow during the exhaust and depressurization stage of the substrate drying process provided in this embodiment of the invention, please refer to [link / reference]. Figure 5 As shown, during the first stage of exhaust pressure relief, the sixth on / off valve V6 is closed, while the states of other valves remain unchanged. Carbon dioxide in the treatment chamber 1 is then... Figure 5 The pressure is released via the indicated route. To facilitate rapid pressure release, the electric regulating valve is opened to 100%. Once the detected pressure reaches a certain value (approximately 8 MPa), the pressure difference between the processing chamber 1 and the plant exhaust pressure decreases, slowing the flow, and then proceeding to the next stage. During the exhaust process, to prevent gas escape, the plant maintains a certain negative pressure for suction (pressure between 400 and 600 Pa) to draw away and centrally process the CO2 emitted from each stage of the drying process. In this embodiment, the plant exhaust pressure is the aforementioned suction negative pressure.

[0049] Figure 6 Please refer to the schematic diagram of the supercritical fluid flow during the two-stage exhaust and depressurization process of the substrate drying process provided in this embodiment of the invention. Figure 6 As shown, in the second stage of exhaust and depressurization, the tenth on / off valve V10 is opened, and the pressure in the treatment chamber 1 can be quickly discharged through the fourth pipeline of the bypass branch. When the pressure in the treatment chamber 1 is detected to be lower than a certain set value (about 3MPa), the next stage is entered.

[0050] Figure 7 For a schematic diagram of the supercritical fluid flow in the three stages of venting and depressurization during the substrate drying process provided in this embodiment of the invention, please refer to [link / reference needed]. Figure 7 As shown, the ninth on / off valve V9 is opened during the three-stage exhaust and depressurization process, which allows for the rapid discharge of pressure inside the processing chamber 1 through the bypass branch. When the pressure inside the processing chamber 1 is detected to be lower than a certain set value (not higher than 0.1MPa), the processing chamber 1 can be opened to send out the substrate.

[0051] In this embodiment, the first on / off valve V1, the second on / off valve V2, the third on / off valve V3, the fourth on / off valve V4, the fifth on / off valve V5, the sixth on / off valve V6, the seventh on / off valve V7, the eighth on / off valve V8, the ninth on / off valve V9, and the tenth on / off valve V10 are all pneumatically controlled diaphragm valves. The pneumatically controlled diaphragm valve in this embodiment is a special type of shut-off valve. Its opening and closing element is a diaphragm made of soft material, which separates the valve body cavity from the valve cover cavity. The diaphragm is connected to a compression member by bolts. The compression member moves up and down by the valve stem. When the compression member rises, the diaphragm is raised, creating a passage; when the compression member descends, the diaphragm is pressed against the valve body weir or the bottom of the profile. The first on / off valve V1 to the tenth on / off valve V10 in this embodiment all use pneumatically controlled diaphragm valves, which have excellent sealing performance, strong corrosion resistance, and are easy to maintain.

[0052] The substrate processing apparatus provided by the present invention includes a processing chamber 1, a fluid supply pipeline 2, a pressure boosting pipeline 3, a displacement pipeline 4, and an exhaust pipeline 5. The processing chamber 1 is provided with a pressure boosting port 11, a displacement port 12, and an exhaust port 13. The fluid supply pipeline 2 includes a first pipeline 21 and a second pipeline 22 connected in series. The first pipeline 21 includes a first branch and a second branch connected in parallel. The first branch is provided with a first on-off valve V1 and a first flow limiter OF1. The second branch is provided with a second on-off valve V2. The second pipeline 22 is provided with a pressure relief pipeline 23, and the pressure relief pipeline 23 is provided with a third on-off valve V3. One end of the booster pipe 3 is connected to the second pipe 22, and the other end is connected to the booster port 11. It includes a third branch and a fourth branch connected in parallel. The third branch is equipped with a fourth on / off valve V4 and a fourth flow restrictor OF4, and the fourth branch is equipped with a fifth on / off valve V5 and a fifth flow restrictor OF5. The fourth and fifth flow restrictors OF4 have different diameters. One end of the displacement pipe 4 is connected to the second pipe 22, and the other end is connected to the displacement port 12. A sixth on / off valve V6 is installed on the displacement pipe 4. The exhaust pipe 5 is connected to the exhaust port 13 for venting exhaust during the displacement stage. This substrate processing device, through the parallel connection of the first and second branches of the first pipe 21 in the fluid supply pipe 2 and the parallel connection of the third and fourth branches of the booster pipe 3, can effectively configure the supercritical fluid flow rate during pressurization and drying in the drying process. This allows it to handle substrates with different surface patterns, increasing the ability to dry different substrates and improving production efficiency.

[0053] A second aspect of the present invention provides a substrate processing method using the substrate processing apparatus described in the above embodiments, the method comprising the following steps: Open the first, second, third, fourth, or fifth on / off valves to allow the supercritical fluid to enter the processing chamber at a restricted flow rate. Specifically, please refer to Figure 2 This step is the slow pressurization phase. Open the first on / off valve V1, or the second on / off valve V2, the third on / off valve V3, the fourth on / off valve V4, or the fifth on / off valve V5, while closing the other valves. At this time, the flow path of carbon dioxide in the pipeline is as follows: Figure 2 Bold path. During the slow pressurization process, the high-pressure carbon dioxide supplied by the liquid carbon dioxide supply unit will flow rapidly to the low-pressure side. In this embodiment, in order to limit the impact of excessively fast carbon dioxide flow rate on the substrate surface pattern, a first flow limiter OF1, a fourth flow limiter OF4, and a fifth flow limiter OF5 are set in the pipeline to limit the flow. The flow limit orifice size corresponding to different flow limit points is different. During the slow pressurization stage, the third on / off valve V3 is used to allow some gas to escape, which can limit the impact of excessively fast carbon dioxide flow rate on the substrate surface pattern.

[0054] Close the third on / off valve to allow supercritical fluid to enter the processing chamber until it reaches supercritical pressure. Specifically, please refer to Figure 3 This step is the rapid pressurization phase. Following the slow pressurization phase, the third on / off valve V3 is closed. At this point, the flow path of carbon dioxide in the pipeline is as follows: Figure 3 The high-pressure carbon dioxide supplied by the liquid carbon dioxide supply unit flows entirely into processing chamber 1, causing a rapid increase in pressure within chamber 1. When the carbon dioxide in processing chamber 1 reaches supercritical pressure (greater than 7.4 MPa), the IPA on the substrate surface begins to dissolve in the supercritical carbon dioxide. At this point, the pressure continues to increase until the carbon dioxide in processing chamber 1 can be maintained in a supercritical state, with a pressure value of approximately 16 MPa.

[0055] Close the fourth and fifth on / off valves and open the sixth on / off valve to allow supercritical fluid to flow in from the displacement port and replace the liquid on the substrate surface in a laminar flow state. Specifically, please refer to Figure 4 When the pressure inside processing chamber 1 reaches the aforementioned supercritical maintaining pressure, close the fourth on / off valve V4 or the fifth on / off valve V5, and open the sixth on / off valve V6, the seventh on / off valve V7, and the eighth on / off valve V8. At this time, the flow path of carbon dioxide in the pipeline is as follows: Figure 4 The path is thickened. Carbon dioxide begins to flow dynamically within processing chamber 1, flowing from the substrate surface in a laminar flow state to dissolve and dry the IPA on the substrate surface. The electric regulating valve BV dynamically adjusts according to the carbon dioxide pressure within processing chamber 1 to ensure that the pressure within processing chamber 1 is maintained in a supercritical state.

[0056] Close the sixth on / off valve, and release pressure to normal pressure in stages through the main exhaust pipe and the main exhaust pipe combined with the bypass exhaust pipe.

[0057] Please see Figure 1 In this embodiment, the first on / off valve V1 and the second on / off valve V2 are connected in parallel. The first and second on / off valves V1 and V2 can be opened in stages to limit the gas flow rate during the slow pressurization stage, further reducing the collapse of the substrate surface pattern. In this embodiment, the fourth on / off valve V4 and the fifth on / off valve V5 are connected in parallel, providing the substrate processing apparatus with more options for the slow and rapid pressurization stages. For example, the slow pressurization stage can employ a combination of the first and fourth on / off valves V4, or the first and fifth on / off valves V5; the rapid pressurization stage can select a combination of the second and fourth on / off valves V4, or the second and fifth on / off valves V5. All four configurations can adjust the carbon dioxide flow rate during both the slow and rapid pressurization stages, allowing for adjustments based on the substrate's front-end processes to adapt to different operating conditions.

[0058] This embodiment can select different configurations based on the varying amounts of IPA covering the substrate surface and the differences in the substrate's aspect ratio. For example, the current limiting aperture of the fourth current limiter is smaller than that of the fifth current limiter. When the chip on the substrate uses a process greater than 7nm but less than 14nm, the slow boost stage and the fast boost stage can employ a combination of the first on / off valve V1 and the fifth on / off valve V5, or the second on / off valve V2 and the fifth on / off valve V5. When the chip on the substrate uses a process less than or equal to 7nm, a combination of the first on / off valve V1 and the fourth on / off valve V4, or the second on / off valve V2 and the fourth on / off valve V4, can be used. When the IPA dosage is greater than 10ml, a combination of the first on / off valve V1 and the fifth on / off valve V5, or the second on / off valve V2 and the fourth on / off valve V4, can be selected.

[0059] For example, during the process of closing the fourth on-off valve V4 and the fifth on-off valve V5 and opening the sixth on-off valve V6, allowing supercritical fluid to flow in from the replacement port and replace the liquid on the substrate surface in a laminar flow state, the exhaust opening is dynamically adjusted by an electric regulating valve to maintain the pressure in the processing chamber 1 at 16MPa±1MPa.

[0060] The substrate processing method described above further includes independently controlling the temperatures of the processing chamber 1, the fluid supply line 2, the boost line 3, the displacement line 4, and the exhaust line 5, so that the temperatures of these components are between 80°C and 160°C. This embodiment, by independently controlling the temperatures of the processing chamber 1, the fluid supply line 2, the boost line 3, the displacement line 4, and the exhaust line 5, can ensure a consistent carbon dioxide temperature within the processing chamber 1, reducing heat loss due to the external environment and during flow through the pipes.

[0061] In the above description, the terms "an embodiment," "some embodiments," "example," "specific example," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0062] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, include: The processing chamber is equipped with a pressure boosting port, a displacement port, and an exhaust port; A fluid supply pipeline includes a first pipeline and a second pipeline connected in series. The first pipeline includes a first branch and a second branch connected in parallel. The first branch is provided with a first on-off valve and a first flow limiter. The second branch is provided with a second on-off valve. The second pipeline is provided with a pressure relief pipeline and a third on-off valve. The booster pipeline has one end connected to the second pipeline and the other end connected to the booster port. It includes a third branch and a fourth branch arranged in parallel. The third branch is equipped with a fourth on-off valve and a fourth flow restrictor, and the fourth branch is equipped with a fifth on-off valve and a fifth flow restrictor. The fourth flow restrictor and the fifth flow restrictor have different diameters. The replacement pipeline has one end connected to the second pipeline and the other end connected to the replacement port. A sixth on / off valve is installed on the replacement pipeline. An exhaust pipe is connected to the exhaust port and is used for exhausting air.

2. The substrate processing apparatus according to claim 1, characterized in that, A second flow limiter is installed on the second pipeline, and a third flow limiter is installed on the pressure relief pipeline.

3. The substrate processing apparatus according to claim 1, characterized in that, The second pipeline is equipped with a pressure measuring element, a safety valve, and a filter, which are arranged sequentially along the fluid flow path.

4. The substrate processing apparatus according to claim 1, characterized in that, There are two replacement ports and two exhaust ports.

5. The substrate processing apparatus according to claim 1, characterized in that, An electric regulating valve is installed on the exhaust pipe. The electric regulating valve is used to dynamically adjust the opening degree according to the pressure in the reaction chamber to maintain the supercritical state.

6. The substrate processing apparatus according to claim 1, characterized in that, The exhaust pipeline includes a seventh on / off valve and a third pipeline connected in series. The third pipeline includes a fifth branch and a sixth branch connected in parallel. An electric regulating valve and an eighth on / off valve are installed on the fifth branch, and a ninth on / off valve is installed on the sixth branch.

7. The substrate processing apparatus according to claim 6, characterized in that, The exhaust pipe also includes a fourth pipe connected to the replacement port. The outlet end of the fourth pipe is connected to the pipe between the seventh on / off valve and the third pipe. A tenth on / off valve is provided on the fourth pipe.

8. The substrate processing apparatus according to claim 1, characterized in that, A gas heater is installed on the second pipeline, and a mass flow meter is installed on the exhaust pipeline.

9. The substrate processing apparatus according to any one of claims 1-8, characterized in that, Temperature control structures are provided on the processing chamber, the fluid supply pipeline, the pressure boosting pipeline, the displacement pipeline, and the exhaust pipeline. The temperature control structures are used to maintain the temperature of the processing chamber, the fluid supply pipeline, the pressure boosting pipeline, the displacement pipeline, and the exhaust pipeline within a preset range.

10. The substrate processing apparatus according to claim 9, characterized in that, The temperature control structure includes a heating structure, a temperature sensor, and a controller. The temperature sensor and the heating structure are both electrically connected to the controller. The temperature sensor is used to acquire the temperature, and the controller is used to control the start and stop of the heating structure according to the temperature.

11. A substrate processing method, employing the substrate processing apparatus according to any one of claims 1-10, characterized in that, The method includes the following steps: Open the first, second, third, fourth, or fifth on / off valve to allow the supercritical fluid to enter the processing chamber at a restricted flow rate. Close the third on / off valve to allow supercritical fluid to enter the processing chamber until it reaches supercritical pressure. Close the fourth and fifth on / off valves and open the sixth on / off valve to allow supercritical fluid to flow in from the displacement port to replace the liquid on the substrate surface. Close the sixth on / off valve, and release pressure to normal pressure in stages through the main exhaust pipe and the main exhaust pipe combined with the bypass exhaust pipe.

12. The substrate processing method according to claim 11, characterized in that, The diameter of the fourth flow limiter is smaller than that of the fifth flow limiter. The opening of the first, second, third, fourth, or fifth on / off valves allows the supercritical fluid to enter the processing chamber at a limited flow rate. When the chip process on the substrate is greater than 7nm and less than 14nm, or when the amount of IPA is greater than 10ml, a combination of opening the first and fifth on / off valves or a combination of opening the second and fifth on / off valves is used. When the chip process on the substrate is less than or equal to 7nm or the amount of IPA is less than or equal to 10ml, a combination of opening the first and fourth opening and closing valves, or a combination of opening the second and fourth opening and closing valves, is adopted.

13. The substrate processing method according to claim 11, characterized in that, The fourth and fifth on / off valves are closed, and the sixth on / off valve is opened to allow supercritical fluid to flow in from the replacement port to replace the liquid on the substrate surface. During this process, the exhaust opening is dynamically adjusted by the electric regulating valve to maintain the pressure in the processing chamber at 16MPa±1MPa.

14. The substrate processing method according to any one of claims 11-13, characterized in that, Also includes: The temperatures of the processing chamber, the fluid supply line, the pressure boosting line, the displacement line, and the exhaust line are independently controlled to keep the temperatures of the processing chamber, the fluid supply line, the pressure boosting line, the displacement line, and the exhaust line between 80°C and 160°C.

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