A power terminal
By setting an insulating layer and a specific structural design on the power terminals of the IGBT module, the short circuit problem between the power terminals and the bonding wires is solved, improving the insulation performance and mechanical reliability of the module and adapting to the needs of different power levels and package sizes.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
- Filing Date
- 2026-01-22
- Publication Date
- 2026-05-29
AI Technical Summary
In existing IGBT modules, the silicone gel isolation between the power terminals and the bonding wires is prone to failure, leading to short circuits and burnout. Traditional structural designs are also prone to solder joint detachment and short circuits between terminals under vibration, making it difficult to adapt to the needs of different power levels and package sizes.
An insulating layer and specific structural design are applied to the power terminals, including bending grooves, notches, and multiple layers of insulating material, forming a double physical barrier. The leads and solder feet are connected in an S-shape to buffer stress, and the terminals are prevented from contacting each other through notches.
It achieves stable insulation performance under high and low temperature and high frequency vibration conditions, reduces the risk of solder joint detachment, adapts to the needs of different power levels and package sizes, and improves mechanical strength and assembly convenience.
Smart Images

Figure CN122121709A_ABST