Substrate for transfer of display pixels using semiconductor light emitting elements and display device including semiconductor light emitting elements

Abstract

The transfer substrate for semiconductor light emitting elements of the display pixel of the embodiment includes a substrate, a plurality of assembly wiring disposed on the substrate, an insulating layer disposed on the plurality of assembly wiring, and an organic film disposed on the insulating layer and having an assembly hole for assembling a semiconductor light emitting element, the insulating layer including a first region, a height of the first region being lower than a height of the organic film.

Description

Technical Field

[0001] The embodiments relate to a substrate for transferring semiconductor light-emitting elements for display pixels and a display device including semiconductor light-emitting elements. Background Technology

[0002] Large-area displays include liquid crystal displays (LCDs), OLED displays, and micro-LED displays.

[0003] A microLED display is a display that uses a semiconductor light-emitting element, namely a microLED, with a diameter or cross-sectional area of ​​less than 100μm as the display element.

[0004] MicroLED displays use semiconductor light-emitting elements, namely microLEDs, as display elements, and therefore have excellent performance in many characteristics such as contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency or luminance.

[0005] In particular, micro-LED displays can separate and combine images in modules, thus offering the advantages of freely adjustable size or resolution and the ability to achieve flexible displays.

[0006] However, large-scale microLED displays require millions of microLEDs, which presents a technical challenge in rapidly and accurately transferring microLEDs to the display panel.

[0007] In recent years, the transfer technologies developed include pick and place process, laser lift-off method, and self-assembly method.

[0008] Among them, the self-assembly method, which is a way for semiconductor light-emitting elements to find their own assembly positions in a fluid, is a way to realize large-screen display devices.

[0009] In recent years, U.S. Patent No. 9,825,202 has disclosed microLED structures suitable for self-assembly, but research on technologies for manufacturing displays through the self-assembly of microLEDs is still insufficient.

[0010] In particular, in the past, when millions of semiconductor light-emitting elements were rapidly transferred on large displays, the transfer speed could be increased, but this may lead to an increase in the transfer error rate, which in turn leads to a decrease in the transfer yield.

[0011] On the other hand, in related technologies, attempts are made to perform a transfer process using a self-assembly method based on dielectrophoresis (DEP), but the self-assembly rate decreases due to factors such as the non-uniformity of DEP forces.

[0012] On the other hand, in the production of large-area display panels, the protrusion of the stamp in the overlapping areas during repeated stamping processes creates difficulties in the production of high ppi (Pixels Per Inch) display panels. Summary of the Invention

[0013] Technical issues

[0014] One technical challenge of this embodiment is to achieve a high ppi display panel.

[0015] Another technical challenge of the embodiments is to realize a large-area display panel.

[0016] Another technical challenge of the embodiments is to pick up the semiconductor light-emitting element assembled on the assembly substrate while the stamp is picking up the semiconductor light-emitting element during the transfer process.

[0017] Another technical challenge of the embodiments is to improve the heat dissipation performance of semiconductor light-emitting elements and thin-film transistors.

[0018] Another technical challenge of the embodiments is to achieve a uniform transfer rate regardless of the area of ​​the stamp during the transfer process.

[0019] Another technical challenge in the embodiments is to improve light efficiency in the display device.

[0020] The technical issues addressed in the embodiments are not limited thereto, but also include those issues that can be grasped through the description of the invention.

[0021] Methods for solving problems

[0022] The substrate for transferring semiconductor light-emitting elements for display pixels in the embodiment includes: a substrate; a plurality of assembly wirings disposed on the substrate; an insulating layer disposed on the plurality of assembly wirings; and an organic film disposed on the insulating layer and having assembly holes for assembling semiconductor light-emitting elements, wherein the insulating layer includes a first region and the height of the first region is lower than the height of the organic film.

[0023] Additionally, the substrate for transferring the semiconductor light-emitting element for display pixels in the embodiment includes: a substrate; an insulating layer disposed on the substrate; a plurality of organic films disposed separately on the insulating layer; a plurality of panel electrodes disposed on the organic films; and a second insulating layer disposed on the plurality of panel electrodes, with trenches included between the plurality of organic films.

[0024] In addition, in the embodiments, the insulating layer includes a first region outside the organic film, and the height of the first region is lower than the height of the organic film.

[0025] In addition, in the embodiment, the panel electrode includes a first assembly hole for assembling a first semiconductor light-emitting element and a second assembly hole for assembling a second semiconductor light-emitting element, wherein the second semiconductor light-emitting element is a redundant chip of the first semiconductor light-emitting element.

[0026] In addition, in the embodiments, the organic membrane is surrounded by the first region.

[0027] Additionally, the display device including a semiconductor light-emitting element in the embodiment includes: a substrate; an insulating layer disposed on the substrate; a plurality of organic films disposed separately on the insulating layer; panel wiring disposed on the organic films; an adhesive layer disposed on the panel wiring; and a semiconductor light-emitting element disposed on the adhesive layer, wherein the semiconductor light-emitting element is electrically connected to the panel wiring via side wiring, and trenches are included between the plurality of organic films.

[0028] In addition, in the embodiments, the height of the region in the adhesive layer that is perpendicular to the organic film is different from the height of the region that is perpendicular to the groove.

[0029] Additionally, the embodiment further includes a planarization layer that covers the adhesive layer, the planarization layer being configured to correspond to the shape of the adhesive layer.

[0030] In addition, in the embodiments, the adhesive layer also includes a light-controlling substance.

[0031] In addition, in the embodiment, the trench further includes a second region, which is located at a position lower than the semiconductor light-emitting element.

[0032] Invention Effects

[0033] The substrate for transferring semiconductor light-emitting elements for display pixels in the embodiment has the technical effect of enabling a display panel with high ppi.

[0034] For example, in one embodiment, an area is provided for capturing air bubbles during the transfer process, so that a flat stamp can be applied to the transfer process, thus enabling a high ppi display panel.

[0035] In addition, the embodiments have the technical effect of enabling large-area display panels.

[0036] For example, the embodiment also includes an area for capturing air bubbles during the transfer process, so that a flat stamp can be applied to the transfer process, thus preventing poor transfer in the overlapping areas, thereby enabling a large-area display panel.

[0037] In addition, the embodiment has the technical effect of achieving a uniform transfer rate of the stamp regardless of the region.

[0038] For example, the embodiments achieve a uniform transfer rate by using a flat stamp without protrusions, whether in the center or the outer contour area.

[0039] In addition, the embodiments have the technical effect of improving the heat dissipation performance of the display device.

[0040] For example, in one embodiment, the semiconductor light-emitting element is disposed on an organic film, thereby increasing the distance between it and the thin-film transistor, which improves heat dissipation performance.

[0041] In addition, the embodiments have the technical effect of improving the light efficiency of the display device.

[0042] For example, in one embodiment, a light control substance is added to the adhesive layer, which can improve the light efficiency of the display device through light reflection and scattering.

[0043] In addition, the embodiment has the technical effect of picking up the semiconductor light-emitting element assembled on the assembly substrate while the stamp is picking up the semiconductor light-emitting element during the transfer process.

[0044] For example, in one embodiment, the semiconductor light-emitting element picked up by the stamp is positioned on a first region, and the assembled semiconductor light-emitting element is picked up by the stamp, thereby enabling multiple pick-up and placement.

[0045] The technical effects of the embodiments are not limited thereto, but also include effects that can be grasped through the description of the invention. Attached Figure Description

[0046] Figure 1 This is an illustrative diagram of a living room in a residence equipped with the display device of the embodiment.

[0047] Figure 2 yes Figure 1 An enlarged view of the first panel area in the display device.

[0048] Figure 3 It is along Figure 2 A cross-sectional view of region A2 taken from line B1-B2.

[0049] Figure 4 This is an illustrative diagram showing how the light-emitting element of the embodiment is assembled onto the substrate using a self-assembly method.

[0050] Figure 5 This is a top view of the substrate for transferring the semiconductor light-emitting element for display pixels according to the first embodiment.

[0051] Figure 6 It is shown Figure 5 A cross-sectional view of the AA' line.

[0052] Figure 7 This is a conceptual diagram of a substrate for transferring semiconductor light-emitting elements for display pixels according to the second embodiment.

[0053] Figure 8 This is a conceptual diagram of a substrate for transferring semiconductor light-emitting elements for display pixels according to the third embodiment.

[0054] Figure 9 This is a conceptual diagram of a substrate for transferring semiconductor light-emitting elements for display pixels according to the fourth embodiment.

[0055] Figure 10 This is a conceptual diagram of a substrate for transferring semiconductor light-emitting elements for display pixels according to the fifth embodiment.

[0056] Figure 11 and Figure 12 This is a conceptual diagram of a display device including a semiconductor light-emitting element according to the sixth embodiment.

[0057] Figure 13 This is a conceptual diagram of the transfer donor for the semiconductor light-emitting element in the seventh embodiment. Detailed Implementation

[0058] The embodiments disclosed in this specification will now be described in detail with reference to the accompanying drawings. The suffixes "module" and "part" used in the following description regarding constituent elements are assigned or used interchangeably for ease of writing and do not inherently distinguish one from another. Furthermore, the accompanying drawings are provided to aid in understanding the embodiments disclosed in this specification, and the technical concepts disclosed in this specification are not limited to the content shown in the drawings. Additionally, when referring to elements such as layers, regions, or substrates existing "on" other constituent elements, this indicates a situation where they exist directly on or between other constituent elements.

[0059] The display devices described in this specification include digital TVs, mobile phones, smartphones, laptop computers, digital broadcasting terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigators, Slate PCs, tablet PCs, Ultrabooks, and desktop computers. However, even for new product forms developed subsequently, the structures of the embodiments described in this specification are equally applicable to displayable devices.

[0060] The light-emitting element and the display device including the light-emitting element of the embodiment will be described below.

[0061] Figure 1 The living room of a residence is shown, in which the display device 100 of the embodiment is configured.

[0062] The display device 100 in this embodiment can display the status of various electronic products such as washing machine 101, robot vacuum cleaner 102, and air purifier 103. It can communicate with each electronic product based on IoT and control various electronic products based on user settings.

[0063] The display device 100 of the embodiment may include a flexible display disposed on a thin and flexible substrate. The flexible display retains the characteristics of conventional flat panel displays while also being able to be bent or rolled up like paper.

[0064] In flexible displays, visual information is achieved by independently controlling the emission of unit pixels arranged in a matrix. A unit pixel is the smallest unit used to achieve a color. The unit pixels of a flexible display can be implemented using light-emitting elements. In embodiments, the light-emitting elements can be micro-LEDs or nano-LEDs, but are not limited to these.

[0065] Figure 2 yes Figure 1 An enlarged view of the first panel area A1 in the display device.

[0066] according to Figure 2 The display device 100 in this embodiment is made by mechanically and electrically connecting multiple panel areas, such as the first panel area A1, through splicing.

[0067] The first panel area A1 may include a per unit pixel ( Figure 2The PX) is configured with multiple light-emitting elements 150.

[0068] For example, a unit pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. For instance, multiple red light-emitting elements 150R may be configured in the first sub-pixel PX1, multiple green light-emitting elements 150G may be configured in the second sub-pixel PX2, and multiple blue light-emitting elements 150B may be configured in the third sub-pixel PX3. A unit pixel PX may also include a fourth sub-pixel without any light-emitting elements, but this is not limited. On the other hand, the light-emitting element 150 may be a semiconductor light-emitting element.

[0069] then, Figure 3 It is along Figure 2 A cross-sectional view of region A2 taken from line B1-B2.

[0070] Reference Figure 3 The display device 100 in the embodiment may include a substrate 200, assembly wiring 201, 202, a first insulating layer 211a, a second insulating layer 211b, a third insulating layer 206, and a plurality of light-emitting elements 150.

[0071] The assembly wiring may include a first assembly wiring 201 and a second assembly wiring 202, which are separate from each other. The first assembly wiring 201 and the second assembly wiring 202 are used to generate the dielectric electrophoretic force required when assembling the light-emitting element 150. In addition, the first assembly wiring 201 and the second assembly wiring 202 are electrically connected to the electrodes of the light-emitting element and are used as electrodes of the display panel.

[0072] Assembly wiring 201, 202 is formed of transparent electrode (ITO) or includes a metallic material with excellent conductivity. For example, assembly wiring 201, 202 is formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo) or alloys thereof.

[0073] A first insulating layer 211a may be disposed between the first assembly wiring 201 and the second assembly wiring 202, and a second insulating layer 211b may be disposed on the first assembly wiring 201 and the second assembly wiring 202. The first insulating layer 211a and the second insulating layer 211b may be an oxide film, a nitride film, etc., but are not limited thereto.

[0074] The light-emitting element 150 may include a red light-emitting element 150, a green light-emitting element 150G, and a blue light-emitting element 150B to form a sub-pixel, but is not limited thereto. It may also include a red phosphor and a green phosphor to realize red and green respectively.

[0075] The substrate 200 may be formed of glass or polyimide. Alternatively, the substrate 200 may include flexible materials such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate). Furthermore, the substrate 200 may be a light-transmitting material, but is not limited to these.

[0076] The third insulating layer 206 may include insulating and flexible materials such as polyimide, PEN, and PET, and may be integrally formed with the substrate 200 to form a substrate.

[0077] The third insulating layer 206 can be a conductive adhesive layer with adhesive and conductive properties. This conductive adhesive layer is flexible, enabling the flexible function of the display device. For example, the third insulating layer 206 can be an anisotropic conductive film (ACF), an anisotropic conductive medium, or a solution containing conductive particles. The conductive adhesive layer can be electrically conductive in the vertical direction relative to its thickness or electrically insulating in the horizontal direction relative to its thickness.

[0078] The third insulating layer 206 may include an assembly hole 203 into which the light-emitting element 150 is inserted. Therefore, during self-assembly, the light-emitting element 150 can be easily inserted into the assembly hole 203 of the third insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, etc.

[0079] The spacing between the assembly wiring 201 and 202 is smaller than the width of the light-emitting element 150 and the width of the assembly hole 203, which allows for more precise fixation of the assembly position of the light-emitting element 150 that utilizes the electric field.

[0080] A third insulating layer 206 is formed on the assembly wiring 201 and 202, thereby protecting the assembly wiring 201 and 202 from the influence of the fluid 1200 and preventing leakage of current flowing in the assembly wiring 201 and 202. The third insulating layer 206 is formed in single or multiple layers with inorganic insulators such as silicon dioxide and aluminum oxide or organic insulators.

[0081] In addition, the third insulating layer 206 may include insulating and flexible materials such as polyimide, PEN, and PET, and may be integrally formed with the substrate 200 to form a substrate.

[0082] The third insulating layer 206 can be an adhesive insulating layer or a conductive adhesive layer. The third insulating layer 206 is flexible, thus enabling the flexible function of the display device.

[0083] The third insulating layer 206 has a partition wall through which mounting holes 203 can be formed. For example, when forming the substrate 200, a portion of the third insulating layer 206 is removed, so that the light-emitting elements 150 are respectively assembled into the mounting holes 203 of the third insulating layer 206.

[0084] An assembly hole 203 for attaching a light-emitting element 150 is formed on the substrate 200, and the surface with the assembly hole 203 can contact the fluid 1200. The assembly hole 203 can guide the light-emitting element 150 to be assembled in the correct position.

[0085] On the other hand, the mounting hole 203 may have a shape and size corresponding to the shape of the light-emitting element 150 to be mounted in the corresponding position. Therefore, it is possible to prevent the mounting of other light-emitting elements or multiple light-emitting elements in the mounting hole 203.

[0086] Figure 4 This is a diagram showing an example of assembling the light-emitting element of an embodiment onto a substrate by a self-assembly method. The self-assembly method of the light-emitting element will be explained with reference to this diagram.

[0087] The substrate 200 is the panel substrate of the display device. In the following description, the case where the substrate 200 is the panel substrate of the display device will be used as an example, but the embodiment is not limited to this.

[0088] Reference Figure 4 Multiple light-emitting elements 150 are introduced into a chamber 1300 filled with fluid 1200. The fluid 1200 can be water such as ultrapure water, but is not limited to this. The chamber can be referred to as a water tank, a vessel, a container, etc.

[0089] The substrate 200 can then be disposed on the chamber 1300. According to an embodiment, the substrate 200 can also be inserted into the chamber 1300.

[0090] like Figure 3 As shown, a pair of assembly wirings 201 and 202 corresponding to the light-emitting element 150 to be assembled can be configured on the substrate 200.

[0091] Reference Figure 4 After the substrate 200 is configured, the assembly apparatus 1100, including a magnetic material, can move along the substrate 200. The magnetic material can be, for example, a magnet or an electromagnet. The assembly apparatus 1100 moves in contact with the substrate 200 to maximize the area of ​​magnetic field action within the fluid 1200. According to an embodiment, the assembly apparatus 1100 may include multiple magnetic materials or include a magnetic material of a size corresponding to the substrate 200. In this case, the movement distance of the assembly apparatus 1100 can be limited within a specified range.

[0092] The light-emitting element 150 inside the chamber 1300 can move toward the assembly device 1100 via the magnetic field generated by the assembly device 1100.

[0093] As the light-emitting element 150 moves toward the assembly device 1100, it enters the assembly hole 203 and comes into contact with the substrate 200 through dielectric electrophoresis (DEP force).

[0094] Specifically, the assembly wirings 201 and 202 form an electric field through an externally supplied power source, and a dielectric electrophoretic force is formed between the assembly wirings 201 and 202 through this electric field. The light-emitting element 150 can be fixed in the assembly hole 203 on the substrate 200 through this dielectric electrophoretic force.

[0095] By applying an electric field through the assembly wirings 201 and 202 formed on the substrate 200, the light-emitting element 150 in contact with the substrate 200 can be prevented from detaching due to the movement of the assembly device 1100. According to the embodiment, by utilizing the self-assembly method of the electromagnetic field described above, the time required to assemble the light-emitting element 150 onto the substrate 200 can be significantly shortened, thus enabling a large-area high-pixel display to be realized more quickly and economically.

[0096] At this time, a specified solder layer (not shown) is formed between the light-emitting element 150 assembled on the assembly hole 203 of the substrate 200 and the assembly electrode, thereby improving the bonding force of the light-emitting element 150.

[0097] Next, a molding layer (not shown) may be formed in the assembly hole 203 of the substrate 200. The molding layer may be a light-transmitting resin or a resin containing reflective or scattering substances.

[0098] Figure 5 This is a top view of the substrate for transferring the semiconductor light-emitting element for the display pixel according to the first embodiment. (See reference...) Figure 5 In the transfer substrate, an insulating layer 130 may be disposed on a substrate (not shown). Assembly wiring 120 is connected to panel wirings 122a and 122b on the insulating layer 130, and assembly holes 155 may be disposed on a plurality of assembly wirings. A plurality of assembly holes 155 may be formed, and redundant chips may be assembled into the assembly holes 155.

[0099] On the other hand, the organic film 135 can be configured to vertically overlap with the assembly wiring 120. The organic film 135 may have assembly holes 155, which can perform a partition function. The insulating layer 130 may include a first region 140 where the organic film 135 is not configured.

[0100] On the other hand, a height difference may exist between the organic film 135 and the first region 140. Therefore, during the pick-and-place transfer process, when the stamp picks up the semiconductor light-emitting element from the transfer substrate, the stamp may not contact the first region 140. Furthermore, bubbles generated during the transfer process may accumulate in the first region 140. Additionally, the bubbles can be discharged to the outside of the transfer substrate through the first region 140.

[0101] On the other hand, in the semiconductor light-emitting element transfer substrate studied in the internal technology, the organic film can be formed as an insulating layer covering the entire substrate. Therefore, when using a stamp in the transfer process, in order to prevent the stamp from being pushed away due to air bubbles being trapped between the substrate and the stamp, it is necessary to use a stamp with protrusions.

[0102] However, in stamps with raised edges, the chip is located at the edge of the raised edge, causing uneven transfer rate depending on position, which can lead to transfer defects. Furthermore, in the manufacture of large-area display panels, the raised edges make it difficult to achieve high ppi display panels when overlapping areas are subjected to multiple stamping processes.

[0103] On the other hand, in the embodiment, the bubbles are discharged to the outside of the transfer substrate through the first region 140, so a flat stamp without protrusions can be used in the transfer process, thereby achieving the technical effect of realizing a high ppi display panel and a large area display panel, and making the transfer rate of the stamp area uniform.

[0104] In addition, in the embodiment, the semiconductor light-emitting element picked up by the stamp during the pick-and-place process is located on the first region 140, thereby having the special technical effect that semiconductor light-emitting elements of the assembly substrate can be additionally picked up while the stamp has picked up the semiconductor light-emitting element.

[0105] Figure 6 It is shown Figure 5 A cross-sectional view of line AA'. (Refer to...) Figure 6 A plurality of assembly wirings 120 may be disposed on the assembly substrate 115. Additionally, an insulating layer 130 may be disposed to cover the plurality of assembly wirings 120 and the assembly substrate 115. The insulating layer 130 may include an inorganic material. The insulating layer 130 may be referred to as an inorganic film.

[0106] Additionally, partitions 160 with assembly holes 155 may be configured on the plurality of assembly wirings 120. The partitions 160 may include organic materials. The partitions 160 may be referred to as organic films. Semiconductor light-emitting elements may be assembled within the assembly holes 155. The height of the partitions may be lower than the height of the upper surface of the semiconductor light-emitting elements.

[0107] On the other hand, Figure 6In the first embodiment, a partition 160 is disposed in the area overlapping with the assembly wiring 120, and the area without the assembly wiring 120 may be a first area without a partition. The first area 140 may be a area without an organic film. The insulating layer 130 may be exposed in the first area 140. The height of the first area 140 may be lower than the height of the partition 160.

[0108] At this time, the aforementioned first region 140 can be used as a channel to discharge air bubbles to the outside of the substrate during the transfer process using a PDMS stamp. Thus, the embodiment allows the application of a PDMS stamp without protrusions to the transfer process.

[0109] Therefore, by applying a flat PDMS stamp to the transfer process, the embodiment has the technical effect of achieving a display panel with high ppi.

[0110] Furthermore, by providing the first region 140, the embodiment has the technical effect of being able to pick up the semiconductor light-emitting element assembled on the assembly substrate 115 while the stamp is picking up the semiconductor light-emitting element.

[0111] Figure 7 This is a conceptual diagram of the substrate for transferring the semiconductor light-emitting element for display pixels according to the second embodiment. (Refer to...) Figure 7 An insulating layer 130 may be disposed on a substrate 115. The insulating layer 130 may include inorganic materials. A plurality of organic films 135 may be disposed on the insulating layer 130. The organic films 135 may have a predetermined height. The organic films 135 may contain organic materials. Panel wiring 125 may be disposed on the organic films 135. Multiple panel wirings 125 may be formed. The panel wirings 125 may include a first panel wiring 125a and a second panel wiring 125b. A second insulating layer 132 may be disposed to cover the panel wirings 125. The second insulating layer 132 may be connected to the insulating layer 130. Furthermore, a semiconductor light-emitting element (not shown) may be disposed on the panel wirings 125. The semiconductor light-emitting element may be electrically connected to the panel wirings 125.

[0112] On the other hand, the substrate 115 may include a thin-film transistor. Furthermore, by disposing an organic film 135 on the substrate and a semiconductor light-emitting element on the organic film 135, the distance between the thin-film transistor and the semiconductor light-emitting element is increased, thereby improving heat dissipation performance.

[0113] Furthermore, the aforementioned plurality of organic films 135 can be arranged separately from each other, and trenches 145 can be formed between the plurality of organic films 135. Therefore, during the transfer process of the semiconductor light-emitting element, bubbles generated from the adhesion between the substrate and the PDMS stamp accumulate in the trenches 145, and the bubbles can be discharged to the outside of the substrate. Thus, in the second embodiment, the trenches 145 prevent bubbles from being trapped on the substrate, thereby allowing the use of a PDMS stamp without protrusions in the transfer process, thereby achieving the technical effect of a transfer substrate with high ppi.

[0114] Figure 8 This is a conceptual diagram of the substrate for transferring the semiconductor light-emitting element according to the third embodiment. (Refer to...) Figure 8 An organic film 135 may be disposed on the insulating layer 130.

[0115] A plurality of panel wirings 125 may be disposed on the aforementioned organic film 135. Furthermore, a semiconductor light-emitting element 157 may be disposed on each of the plurality of panel wirings 125. The aforementioned semiconductor light-emitting element 157 may include a first-first semiconductor light-emitting element 157a and a first-second semiconductor light-emitting element 157b. The first-second semiconductor light-emitting element 157b may be a redundant chip of the first-first semiconductor light-emitting element 157a.

[0116] In addition, the aforementioned plurality of panel wirings 125 may include a first panel wiring 125a, a second panel wiring 125b, and a third panel wiring 125c. Semiconductor light-emitting elements emitting light of different colors may be configured on the first panel wiring 125a, the second panel wiring 125b, and the third panel wiring 125c.

[0117] The aforementioned organic film 135 may include a first organic film 135a and a second organic film 135b. The first organic film 135a and the second organic film 135b may be disposed separately from each other. The first organic film 135a and the second organic film 135b may have a predetermined height. Therefore, the area between the first organic film 135a and the second organic film 135b may be a trench 145. The accompanying drawings illustrate a case where three panel wirings 125 are disposed on the first organic film 135a, but the invention is not limited to this.

[0118] Therefore, in the third embodiment, as the organic films 135 with panel wiring 125 are arranged separately to form trenches 145, bubbles can be discharged to the outside of the substrate after accumulating in the trenches during the transfer process.

[0119] Therefore, in the third embodiment, during the transfer process, bubbles gather in the trench 145 to prevent them from being trapped on the substrate. This allows the application of a PDMS stamp without protrusions to the transfer process, thereby achieving the technical effect of a transfer substrate with high ppi.

[0120] Figure 9 This is a conceptual diagram of a substrate for transferring a semiconductor light-emitting element according to the fourth embodiment. The fourth embodiment can employ the technical features of the third embodiment. For example, in the fourth embodiment, by forming a trench between the first organic film 135a and the second organic film 135b, bubbles accumulate in the trench 145 during the transfer process, preventing bubbles from being trapped on the substrate. This allows a PDMS stamp without protrusions to be applied to the transfer process, thereby achieving the technical effect of a transfer substrate with high ppi. (Refer to...) Figure 9 In the fourth embodiment, the organic film 135 may overlap with a portion of the panel wiring 125. The insulating layer 130 may include a first region 140 where the organic film 135 is not disposed. The organic film 135 and the first region 140 may have a step difference. The organic film 135 may be surrounded by the first region 140 and the trench 145.

[0121] Therefore, in the fourth embodiment, the air bubble is captured in the first region and the groove, thereby enabling the transfer process to be performed using a flat PDMS stamp, thus achieving the technical effect of enabling a high-resolution display device and preventing transfer defects caused by air bubbles.

[0122] Figure 10 This is a conceptual diagram of a substrate for transferring a semiconductor light-emitting element according to the fifth embodiment. The fifth embodiment can employ the technical features of the fourth embodiment. For example, in the fifth embodiment, a trench is formed between the first organic film 135a and the second organic film 135b, and a first region 140 is formed at the outer edge of the organic films. This allows bubbles to accumulate in the trench and the first region during the transfer process, preventing bubbles from being trapped on the substrate. This allows a PDMS stamp without protrusions to be applied to the transfer process, achieving the technical effect of a high ppi transfer substrate. (Refer to...) Figure 10 A plurality of organic films are formed that are perpendicularly overlapped with a panel wiring 125, and the plurality of organic films may include a third organic film 135c and a fourth organic film 135d that are separated from each other.

[0123] A second region 142 may be disposed between the third organic membrane 135c and the fourth organic membrane 135d. The organic membrane and the second region 142 may have a step difference. The second region 142 may correspond to the depth of the trench 145. Thus, each of the organic membranes 135 may be surrounded by the first region 140, the second region 142, and the trench 145.

[0124] Furthermore, a first semiconductor light-emitting element 157a can be disposed on the third organic film 135c, and a second semiconductor light-emitting element 157b can be disposed on the fourth organic film 135d. The second semiconductor light-emitting element 157b can be a redundant chip of the first semiconductor light-emitting element 157a.

[0125] Therefore, in the fifth embodiment, the air bubble is captured in the grooves of the first and second regions, thereby enabling the transfer process to be performed using a flat PDMS stamp, thus achieving the technical effect of enabling a high-resolution display device and preventing transfer defects caused by air bubbles.

[0126] Figure 11 and Figure 12 This is a conceptual diagram of a display device including a semiconductor light-emitting element according to the sixth embodiment. (Refer to...) Figure 11 An insulating layer 130 may be disposed on the substrate 110, an organic film 135 may be disposed on the insulating layer 130, and panel wiring 125 may be disposed on the organic film 135. Additionally, a second insulating layer 132 may be disposed to cover the organic film 135 and the panel wiring 125. Furthermore, an adhesive layer 165 may be disposed to cover the substrate 110 and the second insulating layer 132. A semiconductor light-emitting element 150 may be transferred onto the adhesive layer 165.

[0127] On the other hand, the aforementioned organic film 135 includes a first organic film 135a and a second organic film 135b, which are disposed separately from each other, thereby forming a groove 145 between the first organic film 135a and the second organic film 135b. Therefore, the aforementioned adhesive layer 165 can be formed with a step according to the height of the organic film, and a second region 142 can be included in the groove 145.

[0128] Therefore, in the sixth embodiment, during the transfer of the semiconductor light-emitting element 150, bubbles can accumulate in the second region and be discharged to the outer contour of the substrate. Thus, in the sixth embodiment, a flat PDMS stamp can be used for the transfer process, which, compared to using a stamp with protrusions, provides the technical advantage of achieving a high-resolution display device. Furthermore, using a flat PDMS stamp for the transfer process achieves a uniform transfer rate both in the central and outer contour regions of the stamp.

[0129] Next, refer to Figure 12The semiconductor light-emitting elements 150a and 150b disposed on the adhesive layer 165 can be electrically connected to the panel wiring 125 via the side wiring 159. Furthermore, a planarization layer 185 may be disposed on the adhesive layer 165, and an upper wiring 158 may be disposed on the planarization layer 185, thereby enabling electrical connection with the semiconductor light-emitting elements 150a and 150b. Additionally, the adhesive layer 165 may also contain a light-controlling material 190. The light-controlling material 190 may contain a light reflector and a light scattering agent. The light-controlling material 190 may be located at a lower position than the semiconductor light-emitting elements 150a and 150b. Therefore, in the sixth embodiment, downward-facing light emitted from the semiconductor light-emitting elements is reflected and scattered, thereby improving light efficiency.

[0130] In addition, the aforementioned semiconductor light-emitting elements 150a and 150b are disposed on an organic film 135 having a specified height, thereby increasing the distance between them and the thin-film transistors of the substrate 110, which has the technical effect of improving the heat dissipation performance of the display device.

[0131] Figure 13 This is a conceptual diagram of the transfer donor for the semiconductor light-emitting element according to the seventh embodiment. (Refer to...) Figure 13 In embodiment (a), the donor may include a donor substrate 170, a donor adhesive layer 173 disposed on the donor substrate 170, and a PDMS 175 disposed on the donor adhesive layer 173. The donor may be referred to as a PDMS stamp. In the first to sixth embodiments, air bubbles generated during the transfer process are captured and discharged to the outside through the step of the organic film, thus the PDMS 175 can have a flat structure. Therefore, a high ppi display panel can be achieved, and misalignment of protrusions in overlapping areas is prevented during multiple stamping processes, thereby achieving the technical effect of realizing a large-area display panel.

[0132] Reference Figure 13 (b) The PDMS175 has a flat structure, which prevents the chip from being located in a specific protruding area, thus achieving a uniform transfer rate in both the central and outer regions of the PDMS175.

[0133] The substrate for transferring semiconductor light-emitting elements for display pixels in the embodiment has the technical effect of enabling a display panel with high ppi.

[0134] For example, in one embodiment, an area is provided for capturing air bubbles during the transfer process, so that a flat stamp can be applied to the transfer process, thus enabling a high ppi display panel.

[0135] In addition, the embodiments have the technical effect of enabling large-area display panels.

[0136] For example, the embodiment also includes an area for capturing air bubbles during the transfer process, so that a flat stamp can be applied to the transfer process, thus preventing poor transfer in the overlapping areas, thereby enabling a large-area display panel.

[0137] In addition, the embodiment has the technical effect of achieving a uniform transfer rate of the stamp regardless of the region.

[0138] For example, the embodiments achieve a uniform transfer rate by using a flat stamp without protrusions, whether in the center or the outer contour area.

[0139] In addition, the embodiments have the technical effect of improving the heat dissipation performance of the display device.

[0140] For example, in one embodiment, the semiconductor light-emitting element is disposed on an organic film, thereby increasing the distance between it and the thin-film transistor, which improves heat dissipation performance.

[0141] In addition, the embodiments have the technical effect of improving the light efficiency of the display device.

[0142] For example, in one embodiment, a light control substance is added to the adhesive layer, which can improve the light efficiency of the display device through light reflection and scattering.

[0143] In addition, the embodiment has the technical effect of picking up the semiconductor light-emitting element assembled on the assembly substrate while the stamp is picking up the semiconductor light-emitting element during the transfer process.

[0144] For example, in one embodiment, the semiconductor light-emitting element picked up by the stamp is positioned on a first region, and the assembled semiconductor light-emitting element is picked up by the stamp, thereby enabling multiple pick-up and placement.

[0145] The above description has been based on embodiments of the present invention, but those skilled in the art can make various modifications and alterations to the present invention without departing from the spirit and scope of the invention as set forth in the claims.

[0146] Industrial utilization potential

[0147] The embodiments can be applied to display devices, but are not limited thereto. For example, the embodiments can be applied to micro-LED displays that use inorganic light-emitting elements, i.e., LEDs, as light-emitting pixels, but are not limited thereto.

Claims

1. A substrate for transferring semiconductor light-emitting elements for display pixels, comprising: substrate; Multiple assembly wirings are configured on the aforementioned substrate; An insulating layer is disposed on the aforementioned plurality of assembly wirings; and An organic film is disposed on the aforementioned insulating layer and has assembly holes for assembling semiconductor light-emitting elements. The aforementioned insulating layer includes a first region. The height of the first region is lower than the height of the organic membrane.

2. A substrate for transferring semiconductor light-emitting elements for display pixels, comprising: substrate; An insulating layer disposed on the aforementioned substrate; Multiple organic films are disposed separately on the aforementioned insulating layer; Multiple panel electrodes are disposed on the aforementioned organic film; and A second insulating layer is disposed on the aforementioned plurality of panel electrodes. Grooves are included between the aforementioned organic membranes.

3. The substrate for transferring semiconductor light-emitting elements for display pixels according to claim 2, wherein, The aforementioned insulating layer includes a first region on the outer side of the aforementioned organic film. The height of the first region is lower than the height of the organic membrane.

4. The substrate for transferring semiconductor light-emitting elements for display pixels according to claim 2, wherein, The aforementioned panel electrode includes a first assembly hole for assembling a first semiconductor light-emitting element and a second assembly hole for assembling a second semiconductor light-emitting element. The aforementioned second semiconductor light-emitting element is a redundant chip of the aforementioned first semiconductor light-emitting element.

5. The substrate for transferring semiconductor light-emitting elements for display pixels according to claim 3, wherein, The aforementioned organic membrane is surrounded by the aforementioned first region.

6. A display device including a semiconductor light-emitting element, comprising: substrate; An insulating layer disposed on the aforementioned substrate; Multiple organic films are disposed separately on the aforementioned insulating layer; Panel wiring is disposed on the aforementioned organic film; An adhesive layer is disposed on the aforementioned panel wiring; and A semiconductor light-emitting element is disposed on the aforementioned adhesive layer. The aforementioned semiconductor light-emitting element is electrically connected to the aforementioned panel wiring via side wiring. Grooves are included between the aforementioned organic membranes.

7. The display device including a semiconductor light-emitting element according to claim 6, wherein, The height of the region in the adhesive layer that overlaps perpendicularly with the organic film is different from the height of the region that overlaps perpendicularly with the groove.

8. The display device including a semiconductor light-emitting element according to claim 6, wherein, The display device also includes: A planarization layer, which covers the aforementioned adhesive layer, The planarization layer is configured to correspond to the shape of the adhesive layer.

9. The display device including a semiconductor light-emitting element according to claim 6, wherein, The aforementioned adhesive layer also contains a light-controlling substance.

10. The display device comprising a semiconductor light-emitting element according to claim 6, wherein, The aforementioned trench also includes a second region. The second region is located at a lower position than the semiconductor light-emitting element.

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