A kind of imprint resin for gallium ion extraction and its preparation method and application
By forming an ion-imprinted membrane and a dual recognition mechanism on weakly basic anion exchange resin spheres, the problems of low selectivity and short service life of amine oxime chelating resins are solved, achieving efficient and selective extraction of gallium ions and long-term stable use of the resin.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHENGZHOU NON FERROUS METALS RES INST CO LTD OF CHALCO
- Filing Date
- 2026-03-20
- Publication Date
- 2026-06-02
AI Technical Summary
Existing amine oxime chelating resins have low selectivity when extracting gallium, easily adsorb coexisting ions, and have a short service life, especially prone to oxidation and failure under high temperature environments.
Using Ga(OH)4- as the template ion, an ion-imprinted film is formed on the outer shell and pore surface of a weakly basic anion exchange resin sphere. Combined with the high mechanical strength and chemical stability of the acrylic ion exchange resin sphere, a specific recognition site and a dual recognition mechanism are formed, avoiding swelling or fragmentation of the resin skeleton.
It significantly improves the selective adsorption capacity of gallium ions, extends the service life of the resin, enhances the binding capacity of gallium ions, and avoids the adsorption of coexisting ions and damage to the resin structure.
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Figure CN122127660A_ABST