Temperature control method and 3D stacked dram chip
By incorporating a temperature sensor into the 3D stacked DRAM chip, the downlink traffic and access load can be monitored and actively adjusted in real time, thus solving the heat dissipation problem of the 3D stacked DRAM chip and improving the heat dissipation effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING MINGXIN QIRUI TECHNOLOGY CO LTD
- Filing Date
- 2026-02-06
- Publication Date
- 2026-06-02
AI Technical Summary
3D stacked DRAM chips face significant heat dissipation challenges in the field of high-performance computing, and existing technologies struggle to effectively improve internal thermal conductivity to address the heat generation issues associated with high power density.
By setting temperature sensors in 3D stacked DRAM chips, the chip temperature is monitored in real time, and requests to reduce downlink traffic are actively sent to the external host based on temperature thresholds. Combined with external host regulation and internal strategies, access load and response time are adjusted to optimize the heat dissipation process.
It effectively reduces the heat generation rate of DRAM chips, improves the heat dissipation effect of existing heat dissipation processes such as air cooling, liquid cooling and vertical heat conduction channels, and achieves efficient heat dissipation of chips.
Smart Images

Figure CN122131887A_ABST