Silicon optical subassembly with self-diagnostic capability
Through the coordinated monitoring of NTC and MPD-IN, combined with temperature equivalent conversion and coupling insertion loss calibration, the self-diagnostic function of the silicon photonics module was realized, solving the problems of light source aging and optical path contamination, and ensuring the stability of the communication system.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LITUREX GUANGZHOU CO LTD
- Filing Date
- 2026-02-02
- Publication Date
- 2026-06-02
AI Technical Summary
Existing silicon photonics modules lack effective self-diagnostic mechanisms and cannot provide early warnings of light source aging and optical path contamination, leading to unstable communication clusters and potential data transmission interruptions and maintenance losses.
By coordinating monitoring of NTC and MPD-IN, and combining temperature equivalent conversion, factory coupling insertion loss calibration, and optical power comparison analysis, a two-dimensional self-diagnosis of light source aging and optical path contamination is achieved, triggering early warning.
It enables precise monitoring and early warning of light source aging and optical path contamination, ensuring the stable operation of the communication system and avoiding the impact of sudden optical module failure.
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Figure CN122137464A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of optical communication technology, and more specifically to a silicon photonics module system with self-diagnostic function. Background Technology
[0002] With the continuous expansion of data centers and the rapid development of artificial intelligence, the demand for high-speed data transmission is becoming increasingly urgent. Silicon photonics technology, with its advantages of low power consumption, high bandwidth, miniaturization, and compatibility with existing electronic chips, has become the core direction for optical module development. It integrates core optical components such as lasers, modulators, detectors, and waveguides onto a silicon-based chip, achieving efficient conversion between electrical and optical signals, and is widely used in high-speed optical communication systems. Currently, silicon photonics solutions are gradually becoming mainstream in 1.6T optical modules. However, existing silicon photonics modules face a key problem in practical applications: the lack of an effective self-diagnostic mechanism. Aging of the light source leads to a gradual decrease in luminous power, and dust contamination of the optical path increases coupling insertion loss. Both of these conditions can cause performance degradation of the optical module. Existing technologies cannot detect these potential faults in advance; problems are often only discovered after the optical module suddenly fails, leading to instability in the entire communication cluster, causing severe data transmission interruptions and maintenance losses.
[0003] Based on the above problems, there is an urgent need for a technical solution that can provide early warning of light source aging and optical path contamination to ensure the stable operation of the system. Summary of the Invention
[0004] The purpose of this invention is to address the shortcomings of existing technologies by proposing a silicon photonics module system with self-diagnostic function. The system includes an emitter, which is equipped with a laser, an NTC (Network Temperature Controller), and an MPD-IN (Multi-Level Device). Before leaving the factory, the coupling insertion loss is recorded internally. The MPD-IN monitors the incident light from the silicon photonics PIC (Photonics Integrated Circuit). The NTC acquires the laser temperature. Based on the coupling insertion loss, the incident light is equivalently converted to the laser's luminous power. This luminous power is then equivalently converted to the optical power value at the same temperature at the time of factory shipment. The difference between this optical power value and the previously recorded optical power value is calculated. A warning is triggered based on the relationship between the difference and a preset threshold. If the difference is less than the preset threshold, the lifespan stage is determined using a laser lifespan curve fitted to the factory optical power, and a percentage is reported. A warning is triggered when the lifespan parameter reaches the preset threshold. If the difference is greater than the preset threshold, optical path contamination is detected, and a warning is triggered.
[0005] Preferably, the laser lifetime curve is a continuous curve formed by fitting the lifetime data corresponding to different optical powers obtained through multiple tests before leaving the factory. The lifetime stages are divided into initial stage, stable stage, decay stage and warning stage according to the degree of optical power attenuation, and each stage corresponds to a specific optical power range.
[0006] In a further preferred embodiment, the coupling insertion loss is recorded by recording the LIV curve of the laser during the COC stage before leaving the factory. After coupling is completed, the difference between the incident light power detected by MPD-IN and the current emission power of the laser calculated according to the LIV curve is recorded. This difference is the coupling insertion loss and is stored in the internal storage unit of the system.
[0007] A further preferred method for temperature equivalence conversion is to collect the real-time temperature of the laser using an NTC, and based on the laser's temperature-optical power characteristic curve, convert the real-time equivalent luminous power to the optical power value at the factory-calibrated temperature. The temperature-optical power characteristic curve is obtained by conducting optical power tests on the laser at different temperatures before it leaves the factory.
[0008] More preferably, the optical power value recorded last time is the optical power value equivalent to the current temperature stored after each self-diagnosis by the system. The storage period is consistent with the self-diagnosis period, which is a fixed time interval preset by the system or triggered by an external control signal.
[0009] More preferably, MPD-IN is a photodetector located near the incident end of the silicon photonics PIC. It uses a beam splitter to separate a portion of the light for collection, typically with a splitting ratio of less than 5%. It is used to collect the light signal incident on the silicon photonics PIC in real time and convert it into an electrical signal. The intensity of the electrical signal characterizes the incident light power.
[0010] More preferably, the laser is used in 400G, 800G or 1.6T high-speed optical communication systems. The laser is a silicon-based integrated laser, which is coupled and transmitted with the silicon photonics PIC through free space. There is usually one isolator and one or two lenses between the laser and the silicon photonics PIC.
[0011] More preferably, the preset threshold includes a first threshold and a second threshold. The first threshold is the maximum allowable difference for judging normal changes in optical power, and the second threshold is the critical optical power parameter for lifetime warning. Both the first threshold and the second threshold are preset and stored in the system before leaving the factory based on the laser performance parameters and optical path design parameters.
[0012] A further preferred embodiment is that the equivalent calculation process based on coupling insertion loss is that the laser's emission power is equal to the sum of the incident light power detected by the MPD-IN and the coupling insertion loss. This calculation process is completed by the signal processing unit inside the system, and the signal processing unit establishes electrical connections with the NTC, MPD-IN, and laser respectively.
[0013] In a further preferred embodiment, after the warning is triggered, the system outputs a warning signal, which includes a warning type identifier and current monitoring data. The warning type identifier distinguishes between light source aging warning and optical path pollution warning. The current monitoring data includes real-time temperature equivalent optical power value, difference, percentage of lifetime stage, or current value of coupling insertion loss.
[0014] The technical effects achieved by the above embodiments include: This invention creatively combines temperature equivalence conversion, factory coupling insertion loss calibration, and optical power comparison analysis. Through the collaborative monitoring of NTC and MPD-IN, it achieves dual-dimensional self-diagnosis of light source aging and optical path contamination. Temperature equivalence conversion eliminates the interference of temperature on optical power monitoring, ensuring the accuracy of optical power comparison; factory coupling insertion loss calibration establishes the correlation between incident light and laser emission power, enabling accurate judgment of optical path contamination; lifetime curve fitting and difference analysis provide early warning of faults, effectively solving the problem of sudden optical module failure in existing technologies and ensuring the stable operation of communication trunking. Attached Figure Description
[0015] Figure 1 This is a connection block diagram of the silicon photonics module system with self-diagnostic function in this application; Figure 2 This is a schematic diagram of the silicon photonics module transmitter of this application; Figure 3 This is a schematic diagram of the transmitter of the optimized silicon photonics module in this application.
[0016] In the diagram, 1 is the laser; 2 is the MPD-LD; 3 is the NTC; 4 is the MPD-IN; 5 is the laser; 6 is the NTC; and 7 is the MPD-IN. Detailed Implementation
[0017] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.
[0018] This addresses the technical problem that existing silicon photonics modules lack an effective self-diagnostic mechanism, making it impossible to provide early warnings of sudden failures caused by light source aging and optical path contamination.
[0019] Based on this, please refer to Figure 1-3This embodiment provides a silicon photonics module system with self-diagnostic function, including an emitter. The emitter is equipped with a laser, an NTC, and an MPD-IN. Before leaving the factory, the coupling insertion loss is recorded internally in the system. The MPD-IN monitors the incident light of the silicon photonics PIC. The NTC obtains the laser temperature. Based on the coupling insertion loss, the incident light is equivalently converted into the laser's luminous power. The luminous power is equivalently converted to the optical power value at the same temperature at the factory. The difference between the optical power value and the previously recorded optical power value is obtained. The relationship between the difference and a preset threshold is used to determine whether to trigger an alarm. If the difference is less than the preset threshold, the lifespan stage is determined by the laser lifespan curve fitted by the factory optical power and reported as a percentage. An alarm is triggered when the lifespan parameter reaches the preset threshold. If the difference is greater than the preset threshold, it is determined that there is contamination in the optical path and an alarm is triggered.
[0020] The core of this technical solution lies in achieving comprehensive monitoring of two core faults through the coordinated operation of hardware components and precise calculations by software algorithms. The laser at the system's transmitting end, as the core of optical signal transmission, directly affects communication quality due to the stability of its emitted power. The NTC (Negative Temperature Coefficient Thermistor), closely fitted to the laser, can sense the laser's operating temperature in real time, converting the temperature signal into a corresponding electrical signal and transmitting it to the signal processing unit. The MPD-IN (Multi-Purpose Photodetector), a high-sensitivity photodetector, is installed near the incident end of the silicon photonics PIC (Silicon Photonics Integrated Circuit). It can capture weak optical signals incident on the PIC and convert them into quantifiable electrical signals, thus reflecting the magnitude of the incident optical power.
[0021] Pre-shipment coupling insertion loss recording is a crucial prerequisite. Using the LIV curves independently tested for each laser, the actual emitted optical power of the current laser is calculated, while the incident optical power detected by MPD-IN is recorded. The difference between the two is the coupling insertion loss, which is permanently stored in the system's internal storage unit as an important basis for subsequent power equivalence conversion. During actual operation, the signal processing unit first receives the electrical signal transmitted by MPD-IN, converts it to obtain the current incident optical power, and then adds it to the stored coupling insertion loss to accurately calculate the current equivalent emitted optical power of the laser. Since the emitted optical power of the laser fluctuates with temperature, directly comparing the optical power at different temperatures will produce a large error. Therefore, it is necessary to obtain the current laser temperature via NTC and combine it with the temperature-optical power characteristic curve obtained from pre-shipment testing to convert the current equivalent emitted optical power to the same temperature calibrated at the factory, ensuring the comparability of the optical power data. Subsequently, the signal processing unit retrieves the temperature-equivalent optical power value stored during the last self-diagnosis and calculates the difference between the two optical power values. When the difference is less than the preset first threshold, it indicates that the optical power is within the normal attenuation range. At this time, the system uses the laser lifetime curve fitted before leaving the factory to determine the lifetime stage corresponding to the current optical power. For example, in the initial stage, the optical power is close to the factory maximum value; in the stable stage, the optical power attenuates slowly; in the attenuation stage, the optical power decreases at a faster rate; and in the warning stage, the optical power is close to the second threshold. The lifetime stage is then reported to the upper-level system as a percentage. When the lifetime parameter reaches the second threshold, the system immediately triggers a light source aging warning. If the difference between the two optical power values is greater than the first threshold, it indicates that there is dust contamination in the optical path, leading to increased coupling insertion loss and an abnormal decrease in incident optical power. The system then triggers an optical path contamination warning.
[0022] This technical solution, through the rational layout of hardware components and the precise design of software algorithms, achieves accurate monitoring and early warning of light source aging and optical path contamination, avoiding the impact of sudden optical module failure on communication clusters, and the technical effect is significant.
[0023] This addresses the technical problem of inaccurate lifespan assessment due to the lack of clear definitions and unified standards for laser lifespan curves.
[0024] Based on this, the laser lifetime curve is a continuous curve formed by fitting the lifetime data corresponding to different optical powers obtained through multiple tests before leaving the factory. The lifetime stages are divided into the initial stage, stable stage, decay stage and warning stage according to the degree of optical power attenuation, and each stage corresponds to a specific optical power range.
[0025] This scheme refines the construction of the laser lifetime curve and the division of lifetime stages. Before leaving the factory, each batch of lasers undergoes specialized testing. Under constant temperature conditions, the stable operating time of the laser at different emission powers is obtained by adjusting the laser's operating parameters, i.e., the lifetime data. During the testing process, the optical power starts from the factory maximum value and is gradually reduced. The corresponding lifetime is recorded every time the power decreases by a fixed amount, accumulating at least 50 sets of valid data to ensure the comprehensiveness and accuracy of the data. Subsequently, the least squares method is used to fit these data to obtain a continuous function curve between optical power and lifetime, which is the laser lifetime curve. Based on the degree of optical power decay, the lifetime curve is divided into four distinct stages. The initial stage corresponds to an optical power range of 90% to 100% of the factory maximum optical power. In this stage, the laser performance is stable, the optical power decay rate is extremely slow, and the lifetime accounts for about 30% of the total lifetime. The stable stage corresponds to an optical power range of 70% to 90% of the factory maximum optical power. In this stage, the optical power decays at a constant and slow rate, which is the main operating stage of the laser, and the lifetime accounts for about 40% of the total lifetime. The attenuation stage corresponds to an optical power range of 50% to 70% of the factory-set maximum optical power. During this stage, the optical power attenuation rate accelerates, laser performance begins to decline significantly, and the lifespan accounts for approximately 20% of the total lifespan. The warning stage corresponds to an optical power range below 50% of the factory-set maximum optical power. During this stage, the laser is nearing the end of its lifespan, the optical power attenuation rate increases sharply, and the lifespan accounts for approximately 10% of the total lifespan. The optical power range and corresponding lifespan percentage for each stage are stored in the system as a basis for lifespan determination, ensuring the accuracy and consistency of lifespan stage assessments, resulting in good technical performance.
[0026] This addresses the technical problem of large errors in subsequent power equivalence conversion due to non-standard recording methods for coupling insertion loss.
[0027] Based on this, the coupling insertion loss is recorded by calculating the actual emitted light power of the laser in the system before leaving the factory by recording the LIV curve of the laser. The difference between the incident light power detected by MPD-IN and the actual emitted light power of the laser is recorded. This difference is the coupling insertion loss and is stored in the internal storage unit of the system.
[0028] This scheme clarifies a standardized recording process for coupling insertion loss. Each laser undergoes LIV curve testing and recording during the COC stage. After coupling, the actual emitted optical power is calculated using the LIV curve. Simultaneously, the MPD-IN detects the optical signal incident on the silicon photonics PIC, converts it into an electrical signal, and transmits it to the testing equipment. The testing equipment calculates the incident optical power based on a preset conversion factor. By calculating the difference between the actual emitted laser power and the incident optical power detected by the MPD-IN, the coupling insertion loss of the system can be obtained. This value is stored in a non-volatile memory unit within the system and will not be lost even if the system is powered off. This provides an accurate basis for power equivalence conversion in subsequent self-diagnostic processes, effectively reducing conversion errors and demonstrating significant technical benefits.
[0029] To address the technical problem of inaccurate optical power comparisons due to the unclear method of temperature equivalence conversion, Based on this, the specific method for temperature equivalence conversion is to collect the real-time temperature of the laser by NTC, and based on the temperature-optical power characteristic curve of the laser, convert the real-time equivalent luminous power to the optical power value at the factory calibration temperature. The temperature-optical power characteristic curve is obtained by optical power testing of the laser at different temperatures before leaving the factory.
[0030] This scheme details the implementation process of temperature equivalence conversion. Before leaving the factory, the laser undergoes temperature-optical power characteristic testing in a constant temperature chamber, with a temperature range of -40℃ to 85℃, covering the entire operating temperature range of the laser. At each temperature point, the laser's operating current is kept constant, and the laser's emission power is recorded. At least five tests are performed at each temperature point, and the average value is taken as the standard optical power value at that temperature. After the test, the optical power values corresponding to different temperature points are fitted to obtain a temperature-optical power characteristic curve. This curve, with temperature on the x-axis and optical power on the y-axis, can intuitively reflect the influence of temperature changes on the laser's emission power.
[0031] In actual self-diagnosis, the NTC acquires the laser's operating temperature in real time, converts the temperature signal into a digital signal, and transmits it to the signal processing unit. The signal processing unit then uses this temperature value to find the corresponding optical power correction factor on the temperature-optical power characteristic curve. For example, when the laser's current temperature is higher than the factory-calibrated temperature, the luminous power will decrease, and the correction factor will be greater than 1; when the current temperature is lower than the factory-calibrated temperature, the luminous power will increase, and the correction factor will be less than 1. By multiplying the real-time equivalent luminous power by the corresponding correction factor, it can be accurately converted to the optical power value at the factory-calibrated temperature, eliminating the interference of temperature factors on optical power monitoring, ensuring the accuracy of optical power comparisons at different time points, and demonstrating good technical effectiveness.
[0032] This addresses the technical issue of the lack of a unified standard for calculating the difference due to the unclear storage method of the previously recorded optical power value.
[0033] Based on this, the optical power value recorded last time is the optical power value equivalent to the current temperature stored after the system completes each self-diagnosis. The storage period is consistent with the self-diagnosis period, which is a fixed time interval preset by the system or triggered by an external control signal.
[0034] This solution clearly defines the storage rules for optical power values and the setting method for the self-diagnosis cycle. After each self-diagnosis process, the signal processing unit stores the calculated temperature-equivalent optical power value in the internal storage unit, overwriting the previously stored value, ensuring that the stored optical power value is always the latest self-diagnosis result. The storage cycle is strictly consistent with the self-diagnosis cycle, which can be flexibly set according to the actual application scenario.
[0035] For scenarios with high stability requirements, the self-diagnostic cycle can be set to a shorter fixed time interval, such as once every 5 minutes, to promptly detect potential faults. For scenarios with low power consumption requirements, the self-diagnostic cycle can be set to a longer fixed time interval, such as once every hour, to reduce system power consumption. Furthermore, the system supports external control signal-triggered self-diagnosis. When the host system detects a decline in communication quality or receives a maintenance command, it can send a control signal to this system to trigger immediate self-diagnosis, improving system flexibility and response speed. The unified storage method and flexible self-diagnostic cycle settings ensure the consistency and accuracy of difference calculations, providing a reliable basis for fault diagnosis, resulting in significant technical benefits.
[0036] The lack of clarity regarding the type and working principle of MPD-IN leads to a lack of technical support for incident light power monitoring.
[0037] Based on this, MPD-IN is a photodetector located near the incident end of the silicon photonics PIC. It uses a beam splitter to separate a portion of the light for collection, typically with a splitting ratio of less than 5%. It is used to collect the light signal incident on the silicon photonics PIC in real time and convert it into an electrical signal. The intensity of the electrical signal characterizes the incident light power.
[0038] This solution details the technical parameters and operating mechanism of the MPD-IN. The MPD-IN uses a PIN-type photodetector whose response wavelength matches the laser's emission wavelength, ensuring high absorption of the incident light signal. This photodetector has a dark current of less than 1 nA and a responsivity greater than 0.8 A / W, enabling accurate detection of changes in weak light signals. The MPD-IN is integrated into a silicon photonics PIC, located near the incident end, and uses a beam splitter for beam splitting. The splitting ratio is typically less than 5%, and it remains perpendicular to the split light path to ensure maximum reception of the incident light signal. During operation, the incident light signal illuminates the photosensitive surface of the MPD-IN. The photosensitive surface absorbs photon energy and generates electron-hole pairs. Under the action of a reverse bias voltage, the electrons and holes separate and form a photocurrent. The intensity of the photocurrent is proportional to the incident light power. The signal processing unit acquires this photocurrent signal, performs analog-to-digital conversion and amplification, and then calculates the specific value of the incident light power according to a preset calibration curve. The high sensitivity and stability of MPD-IN ensure the accuracy and real-time performance of incident light power monitoring, providing reliable data support for subsequent power equivalence conversion, and demonstrating good technical results.
[0039] This addresses the technical problem of insufficient system adaptability caused by unclear application scenarios and structural forms of lasers.
[0040] Based on this, lasers are used in 400G, 800G or 1.6T high-speed optical communication systems. The lasers are silicon-based integrated lasers, which are coupled and transmitted with silicon photonic PICs through free space. There is usually one isolator and one or two lenses between the laser and the silicon photonic PIC.
[0041] This scheme clarifies the application scope and structural characteristics of the laser. The laser is manufactured using silicon-based integrated circuit technology, forming a monolithic integrated structure with the silicon photonics PIC (Photonic Photonics Integrated Circuit), featuring small size, low power consumption, and strong compatibility. Its emission wavelength is selected according to the application scenario, typically available in single-wavelength (1310nm) and multi-wavelength (1271nm / 1291nm / 1311nm / 1331nm) systems, integrating multiple laser emission units of different wavelengths. The laser's output power is set according to system requirements; in single-wavelength systems, the laser's output power is typically 17~20dBm, while in multi-wavelength systems, it is typically 15~18.5dBm. Optical signal coupling and transmission between the laser and the silicon photonics PIC are achieved through free space. An isolator is usually added between the laser and the PIC to prevent light reflection from affecting the laser's emission stability. Additionally, one or two lenses are typically used to focus the laser light onto the PIC's input port. This integrated structural design and diverse wavelength selection enable the system to be adapted to high-speed optical communication systems with different rates such as 400G, 800G and 1.6T, improving the system's versatility and adaptability, and demonstrating significant technical benefits.
[0042] This addresses the technical issue of inaccurate early warning judgments due to the lack of clear division and setting criteria for preset thresholds.
[0043] Based on this, the preset thresholds include a first threshold and a second threshold. The first threshold is the maximum allowable difference for judging normal changes in optical power, and the second threshold is the critical optical power parameter for lifetime warning. Both the first and second thresholds are preset and stored in the system before leaving the factory based on the laser performance parameters and optical path design parameters.
[0044] This scheme clearly defines and standardizes the preset thresholds. The first threshold is set primarily based on the normal attenuation rate of the laser, the measurement error of MPD-IN, and the temperature measurement error of NTC. Through long-term stability testing of a large number of lasers, the maximum daily attenuation rate of the laser under normal operating conditions was statistically obtained. Combined with the measurement error of MPD-IN (±0.05dB) and the temperature measurement error of NTC (±0.5℃), the first threshold is calculated and is typically set to 0.3dB to 0.5dB to ensure effective differentiation between normal attenuation and abnormal changes in optical power.
[0045] The second threshold is set based on the minimum effective output power of the laser. When the laser output power is lower than this value, the system's normal communication requirements cannot be met. By testing the system's communication bit error rate at different power levels, the optical power corresponding to a bit error rate exceeding 10^-12 is considered the minimum effective output power. This is used as the second threshold, typically set to 50% to 60% of the factory-set maximum optical power. The first and second thresholds are written into the system's internal storage unit using testing equipment before leaving the factory. Users can make minor adjustments through the host system according to the needs of actual application scenarios, ensuring the accuracy and flexibility of the warning judgment, with good technical performance.
[0046] This addresses the technical problem that the unclear equivalent calculation process based on coupling insertion loss leads to a lack of logical support for power conversion.
[0047] Based on this, the equivalent calculation process based on coupling insertion loss is that the laser's emission power is equal to the sum of the incident light power detected by MPD-IN and the coupling insertion loss. This calculation process is completed by the signal processing unit inside the system, which establishes electrical connections with NTC, MPD-IN, and laser respectively.
[0048] This scheme details the logic and hardware implementation of power equivalence conversion. The signal processing unit employs a high-performance microprocessor, possessing rapid data processing capabilities.
[0049] The signal processing unit connects directly to the NTC via the ADC unit to sample temperature data; it connects to the MPD-IN via the analog signal acquisition channel to receive photocurrent signals; and it connects to the laser via the driver to monitor the laser's operating status. During power equivalence conversion, the signal processing unit first converts the photocurrent signal transmitted by the MPD-IN into a voltage signal. After low-pass filtering to remove noise interference, it converts it into a digital signal via an analog-to-digital converter, and then calculates the incident light power P1 according to the calibration curve. Subsequently, the signal processing unit retrieves the coupling insertion loss L recorded before the factory from the storage unit and calculates the actual luminous power P of the laser using the formula P=P1+L. The theoretical basis of this formula is that the light power incident on the silicon photonics PIC equals the laser's luminous power minus the loss during coupling; therefore, the laser's luminous power can be obtained by reverse derivation. The hardware connection design and clear calculation logic of the signal processing unit ensure the accuracy and real-time performance of the power equivalence conversion, laying the foundation for subsequent temperature equivalence conversion and difference calculation, demonstrating significant technical effectiveness.
[0050] This addresses the technical problem of the lack of a unified format and key information for early warning signals, which prevents the upper-level system from effectively identifying and processing them.
[0051] Based on this, after the warning is triggered, the system outputs a warning signal, which includes a warning type identifier and current monitoring data. The warning type identifier distinguishes between light source aging warning and optical path pollution warning. The current monitoring data includes real-time temperature equivalent optical power value, difference, percentage of lifetime stage, or current value of coupling insertion loss.
[0052] This scheme standardizes the format and content of early warning signals. Early warning signals are in digital format and transmitted to the host system via a standard communication interface that supports I2C and conforms to the CMIS (Common Management Interface Specification) protocol of the optical module industry standard. Early warning type identifiers are represented by two binary digits: 01 indicates light source aging warning, 10 indicates optical path pollution warning, 11 indicates dual warning, and 00 indicates no warning. Current monitoring data is encoded in hexadecimal and contains multiple fields. The real-time temperature equivalent optical power value field occupies 2 bytes with a precision of 0.01 dBm; the difference field occupies 2 bytes with a precision of 0.01 dB; the lifetime stage percentage field occupies 1 byte with a precision of 1%; and the current coupling insertion loss value field occupies 2 bytes with a precision of 0.01 dB. When a light source aging warning is triggered, the warning signal includes warning type identifier 01, real-time temperature equivalent optical power value, difference, and percentage of lifespan stage. When an optical path contamination warning is triggered, the warning signal includes warning type identifier 10, real-time temperature equivalent optical power value, difference, and current coupling insertion loss value. When a dual warning is triggered, the warning signal includes all fields. The unified signal format and rich monitoring data enable the upper-level system to quickly identify the warning type, obtain key monitoring information, and take timely corresponding measures, such as automatically allocating low-load operation and notifying maintenance personnel for replacement, resulting in good technical effectiveness.
[0053] This is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any other way. Any person skilled in the art may make changes or modifications to the above-disclosed technical content to create equivalent embodiments that can be applied to other fields. However, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the protection scope of the present invention.
Claims
1. A silicon photonics module system with self-diagnostic function, comprising an emitter, wherein the emitter is equipped with a laser, an NTC, and an MPD-IN, characterized in that, Before leaving the factory, the coupling insertion loss is recorded internally in the system; MPD-IN monitors the incident light of the silicon photonics PIC; NTC obtains the laser temperature; based on the coupling insertion loss, the incident light is equivalently converted into the laser's luminous power; this luminous power is equivalently converted to the optical power value at the same temperature at the factory; the difference between this optical power value and the previously recorded optical power value is obtained; the relationship between the difference and a preset threshold is used to determine whether an alarm is triggered. If the difference is less than the preset threshold, the life stage is determined by the laser life curve fitted by the factory optical power and reported as a percentage. An alarm is triggered when the life parameter reaches the preset threshold. If the difference is greater than the preset threshold, it is determined that there is pollution in the optical path and an early warning is triggered.
2. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, The laser lifetime curve is a continuous curve formed by fitting the lifetime data corresponding to different optical powers obtained through multiple tests before leaving the factory. The lifetime stages are divided into the initial stage, stable stage, decay stage and warning stage according to the degree of optical power attenuation. Each stage corresponds to a specific optical power range.
3. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, The coupling insertion loss is recorded by recording the LIV curve of the laser during the COC stage before leaving the factory. After coupling is completed, the difference between the incident light power detected by MPD-IN and the current emission power of the laser calculated according to the LIV curve is recorded. This difference is the coupling insertion loss and is stored in the internal storage unit of the system.
4. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, The specific method for temperature equivalence conversion is to collect the real-time temperature of the laser by NTC, and based on the temperature-optical power characteristic curve of the laser, convert the real-time equivalent luminous power to the optical power value at the factory calibration temperature. The temperature-optical power characteristic curve is obtained by optical power testing of the laser at different temperatures before leaving the factory.
5. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, The previously recorded optical power value is the optical power value equivalent to the current temperature stored after each self-diagnosis by the system. The storage period is consistent with the self-diagnosis period, which is a fixed time interval preset by the system or triggered by an external control signal.
6. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, MPD-IN is a photodetector located near the incident end of a silicon photonics PIC. It uses a beam splitter to separate a portion of the light for collection, typically with a splitting ratio of less than 5%. It is used to collect the light signal incident on the silicon photonics PIC in real time and convert it into an electrical signal. The intensity of the electrical signal characterizes the incident light power.
7. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, The laser is used in 400G, 800G or 1.6T high-speed optical communication systems. The laser is a silicon-based integrated laser, which is coupled with the silicon photonics PIC to transmit optical signals through free space. There is usually one isolator and one or two lenses between the laser and the silicon photonics PIC.
8. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, The preset thresholds include a first threshold and a second threshold. The first threshold is the maximum allowable difference for judging normal changes in optical power, and the second threshold is the critical optical power parameter for lifetime warning. Both the first and second thresholds are preset and stored in the system before leaving the factory based on the laser performance parameters and optical path design parameters.
9. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, The equivalent calculation process based on coupling insertion loss is that the laser's emitted power is equal to the sum of the incident light power detected by the MPD-IN and the coupling insertion loss. This calculation process is completed by the signal processing unit inside the system, which establishes electrical connections with the NTC, MPD-IN, and laser respectively.
10. The silicon photonics module system with self-diagnostic function according to claim 1, characterized in that, After the warning is triggered, the system outputs a warning signal, which includes a warning type identifier and current monitoring data. The warning type identifier distinguishes between light source aging warning and optical path pollution warning. The current monitoring data includes real-time temperature equivalent optical power value, difference, percentage of lifetime stage, or current value of coupling insertion loss.