Semiconductor device
By introducing an insulating layer inside the trench of the semiconductor device to insulate it from the gate electrode, the problem of limited distance between the gate electrode and the contact electrode is solved, enabling miniaturization of the semiconductor device and improvement of its electrical characteristics.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ROHM CO LTD
- Filing Date
- 2018-11-26
- Publication Date
- 2026-06-02
AI Technical Summary
In the prior art, the distance between the gate electrode and the contact electrode of a semiconductor device is limited by the dimensional tolerance of the contact electrode, which makes it impossible to achieve miniaturization.
By introducing an insulating layer in the trench of the semiconductor layer, a gate electrode is placed opposite the main region and the impurity region through the gate insulating layer, and a contact electrode is formed through the sidewall of the trench, thus avoiding gaps between the contact electrode and the gate electrode and achieving insulation of the contact electrode.
It alleviates the limitations of contact electrode size tolerances, promotes the miniaturization of semiconductor devices, and improves switching speed and voltage withstand characteristics.
Smart Images
Figure CN122138422A_ABST