A CMOS-graphene-based terahertz wave detector and its fabrication method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUN YAT SEN UNIV
- Filing Date
- 2026-02-27
- Publication Date
- 2026-06-02
AI Technical Summary
There are gaps in the integration of graphene with CMOS integrated circuits in the current technology, making it difficult to achieve stable and fast terahertz wave detection, and lacking broadband absorption capabilities.
By sequentially depositing zinc, nickel, and gold on the aluminum electrode layer of a CMOS chip to form source and drain electrodes, and then transferring graphene onto these electrodes, patterned graphene layers are fabricated using maskless photolithography to form a CMOS-graphene-based terahertz wave detector.
It achieves effective integration of graphene and CMOS chip, has broad-spectrum absorption capability, can quickly generate significant photocurrent response, and provides intuitive and clear detection results with stability and repeatability.
Smart Images
Figure CN122138501A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the technical field of terahertz wave detection, and more specifically, to a CMOS-graphene-based terahertz wave detector and its fabrication method. Background Technology
[0002] Complementary metal-oxide-semiconductor (CMOS) technology enables the fabrication of small, low-cost, and powerful microprocessors, memory chips, and imaging systems. Traditional CMOS technology is largely based on silicon, a single semiconductor material. Silicon's bandgap makes it sensitive to visible light, but unsuitable for ultraviolet, infrared, and especially short-wave infrared (SWIR) bands. High-performance optoelectronic functions such as high-speed modulation, laser emission, and broadband detection are difficult to achieve with silicon alone. Graphene, a two-dimensional material composed of a single layer of carbon atoms, possesses unique properties: it absorbs light across a wide range, from ultraviolet, visible, and infrared to terahertz frequencies, offering a viable solution to the spectral limitations of silicon; electrons move extremely quickly and with minimal resistance within graphene, enabling graphene-based devices to operate at high frequencies, suitable for high-speed optical communication and rapid imaging; and graphene can be transferred to appropriate substrates, providing a physical possibility for integration. However, there are still gaps in current technologies for integrating graphene with CMOS integrated circuits. Summary of the Invention
[0003] The purpose of this invention is to overcome the shortcomings of existing technologies in integrating graphene with CMOS, and to provide a CMOS-graphene-based terahertz wave detector and its preparation method. The detector is stable, can support identifiable and repeatable terahertz responses, and has a wide-spectrum absorption capability. The terahertz wave detector can quickly generate significant photocurrent responses, and the detection results are intuitive and clear.
[0004] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows:
[0005] A method for fabricating a terahertz wave detector based on CMOS-graphene is provided, comprising the following steps: S1. Take a CMOS chip and sequentially perform zinc plating, nickel plating, and gold plating on the aluminum electrode layer on the CMOS chip to obtain the source electrode and drain electrode. S2. Take graphene, transfer the graphene to the source electrode and drain electrode, and then perform annealing treatment; S3. The graphene on the annealed chip sample is patterned using maskless photolithography to obtain a patterned graphene layer. S4. Anneal the chip sample with the patterned graphene layer to obtain a terahertz wave detector based on CMOS-graphene.
[0006] This invention discloses a method for fabricating a terahertz wave detector based on CMOS-graphene. By sequentially depositing zinc, nickel, and gold on an aluminum electrode layer to obtain source and drain electrodes, a good ohmic contact can be formed between the source and drain electrodes and the graphene. Graphene possesses a broad absorption spectrum, spanning from ultraviolet light to millimeter waves, allowing the fabricated terahertz wave detector to cover the same wide range of response wavelengths. Since this invention utilizes a CMOS chip, the terahertz wave detector obtained by integrating graphene with the CMOS chip can rapidly generate a significant photocurrent response, providing clear and intuitive detection results. This invention also exhibits stability, supporting identifiable and repeatable terahertz responses.
[0007] Further, step S2 includes the following steps: S21. Release the graphene, cut to specifications, into pure water; S22. Take a glass slide with a PDMS film, then place the released graphene on the glass slide, and then air dry; wherein the side of the graphene containing PMMA is in contact with the PDMS film; S23. Press the glass slide containing graphene onto the source electrode and drain electrode and heat it; S24. After heating is complete, the glass slide with the PDMS film is picked up and then annealed to complete the graphene transfer.
[0008] Further, in step S21, the graphene is released in pure water for 2 hours; in step S23, the heating temperature is 130°C and the heating time is 90 seconds; in step S24, after picking up the glass slide with the PDMS film, the chip sample with graphene is immersed in acetone solution to remove the PMMA on the surface of the graphene; and then annealing is performed.
[0009] Further, step S3 includes the following steps: S31. Coat the annealed chip sample with photoresist; S32. The chip sample coated with photoresist is exposed to a maskless pattern according to the preset exposure parameters, and then developed; S33. Perform plasma etching on the developed chip sample; S34. Remove the photoresist from the etched chip sample to obtain a patterned graphene layer.
[0010] Furthermore, the preparation method also includes step S5: performing a photocurrent response test on the obtained terahertz wave detector; the photocurrent response test includes the following steps: S51. Set up a test system, the test system including a test platform, a PCB circuit board set on the test platform, a terahertz laser, a polished mirror, a DC power supply, and an oscilloscope, the DC power supply being electrically connected to the PCB circuit board and the oscilloscope; S52. The terahertz wave detector is fixed to the test platform via the PCB circuit board. The terahertz laser generates terahertz waves, which are reflected by the parabolic mirror and then perpendicularly irradiate the surface of the terahertz wave detector to excite the patterned graphene layer on the terahertz wave detector to generate photocurrent. During the test, the bias voltage is maintained. V ds =0, the CMOS chip of the terahertz wave detector converts the current signal into a voltage signal and outputs it to the oscilloscope for display.
[0011] Further, step S1 includes the following steps: S11. Remove the CMOS chip and clean it to remove contaminants; S12. The cleaned CMOS chip is subjected to a solution immersion method to perform a first zinc immersion, nitric acid zinc stripping, and a second zinc immersion in sequence, and then a zinc layer is obtained on the aluminum electrode layer of the CMOS chip. S13. The zinc layer is subjected to a solution immersion method and nickel deposition using a water bath heating method to obtain a nickel layer; S14. The nickel layer is subjected to a solution immersion method and gold deposition using a water bath heating method to obtain a gold layer.
[0012] Further, step S11 includes the following steps: S111. Perform ultrasonic cleaning on the CMOS chip; S112. Immerse the ultrasonically cleaned CMOS chip in a sodium hydroxide solution to dissolve the aluminum oxide on the surface of the aluminum electrode layer on the CMOS chip; S113. Immerse the CMOS chip in nitric acid solution to dissolve the residual metal oxide on the surface of the aluminum electrode layer.
[0013] Further, step S12 includes the following steps: S121. Immerse the CMOS chip in an aluminum zinc immersion solution and let it stand, and perform a zinc immersion on the aluminum electrode layer; S122. Immerse the chip sample after the first zinc immersion in nitric acid solution and let it stand to remove the loose particles in the first zinc immersion. S123. The chip sample after zinc removal by nitric acid is immersed in aluminum zinc immersion solution and left to stand. A second zinc immersion is performed on the aluminum electrode layer to obtain the zinc layer. The soaking time for the first zinc immersion is longer than that for the second zinc immersion.
[0014] Further, step S13 includes: immersing the chip sample with the obtained zinc layer in a chemical nickel plating solution, and then heating it in a water bath to obtain the nickel layer; Step S14 includes: immersing the chip sample with the obtained nickel layer in a chemical gold immersion solution, and then heating it in a water bath to obtain the gold layer.
[0015] The present invention also provides a terahertz wave detector based on CMOS-graphene, comprising a substrate layer, a patterned graphene layer, a source electrode, and a drain electrode. The source electrode and the drain electrode are both connected to the surface of the substrate layer, and the patterned graphene layer is connected to both the source electrode and the drain electrode. The substrate layer is a CMOS silicon substrate, and the source electrode and the drain electrode each comprise an aluminum electrode layer, a zinc layer, a nickel layer, and a gold layer stacked from bottom to top.
[0016] Compared with the prior art, the beneficial effects of the present invention are: This invention relates to a CMOS-graphene-based terahertz wave detector and its fabrication method. By sequentially depositing zinc, nickel, and gold on an aluminum electrode layer to obtain source and drain electrodes, a good ohmic contact can be formed between the source and drain electrodes and the graphene. Graphene possesses a broad absorption spectrum, spanning from ultraviolet light to millimeter waves, allowing the fabricated terahertz wave detector to cover the same wide range of response wavelengths. Since this invention utilizes a CMOS chip, the terahertz wave detector obtained by integrating graphene with the CMOS chip can rapidly generate a significant photocurrent response, providing clear and intuitive detection results. This invention also exhibits stability, supporting identifiable and repeatable terahertz responses. Attached Figure Description
[0017] Figure 1 This is a flowchart illustrating a method for fabricating a terahertz wave detector based on CMOS-graphene according to the present invention. Figure 2 This is a schematic diagram of a method for fabricating a terahertz wave detector based on CMOS-graphene according to the present invention. Figure 3 This is a schematic diagram showing the test results of the CMOS-graphene-based terahertz wave detector of this invention under 2.52THz laser irradiation and 69mW power. Figure 4 This is a statistical distribution diagram of the current responsivity of the CMOS-graphene-based terahertz wave detector of this invention under 2.52THz laser irradiation. Figure 5This is a schematic diagram of the structure of a terahertz wave detector based on CMOS-graphene according to the present invention; Figure 6 This is a schematic diagram of the source electrode and drain electrode of the present invention.
[0018] In the attached figure: 100, substrate layer; 200, patterned graphene layer; 300, source electrode; 400, drain electrode; 101, aluminum electrode layer; 102, zinc layer; 103, nickel layer; 104, gold layer. Detailed Implementation
[0019] The present invention will be further described below with reference to specific embodiments. The accompanying drawings are for illustrative purposes only, representing schematic diagrams rather than actual physical objects, and should not be construed as limiting the scope of this patent. To better illustrate the embodiments of the present invention, some components in the drawings may be omitted, enlarged, or reduced, and do not represent the actual dimensions of the product. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.
[0020] In the accompanying drawings of the embodiments of the present invention, the same or similar reference numerals correspond to the same or similar components. In the description of the present invention, it should be understood that if terms such as "upper," "lower," "left," "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the terms used to describe positional relationships in the drawings are only for illustrative purposes and should not be construed as limiting the present patent. For those skilled in the art, the specific meaning of the above terms can be understood according to the specific circumstances.
[0021] Example 1 like Figures 1 to 2 The first embodiment of the fabrication method of a CMOS-graphene-based terahertz wave detector of the present invention is shown, which includes the following steps: S1. Take a CMOS chip and sequentially perform zinc plating, nickel plating, and gold plating on the aluminum electrode layer 101 on the CMOS chip to obtain the source electrode 300 and the drain electrode 400. S2. Take graphene, transfer the graphene to the source electrode 300 and the drain electrode 400, and then perform annealing treatment; S3. The graphene on the annealed chip sample is patterned by maskless photolithography to obtain a patterned graphene layer 200. S4. Anneal the chip sample with the patterned graphene layer 200 to obtain a terahertz wave detector based on CMOS-graphene.
[0022] This invention achieves the configuration of source electrode 300 and drain electrode 400 by sequentially depositing zinc, nickel, and gold on aluminum electrode layer 101. This allows the source electrode 300 and drain electrode 400 to form a good ohmic contact with graphene. Graphene possesses a broad absorption spectrum, spanning from ultraviolet light to millimeter waves, enabling the prepared terahertz wave detector to cover the same wide range of response wavelengths. Since this invention utilizes a CMOS chip, the terahertz wave detector obtained by integrating graphene with the CMOS chip can quickly generate a significant photocurrent response, providing intuitive and clear detection results. This invention also exhibits stability and supports identifiable and repeatable terahertz responses.
[0023] like Figure 2 As shown, step S2 includes the following steps: S21. Release the graphene, cut to specifications, into pure water; Specifically, graphene can be fully expanded by releasing it in pure water for 2 hours; it should be noted that the graphene used in this embodiment is a one-step transferred graphene film. S22. Take a glass slide with a PDMS film, then place the released graphene on the glass slide and let it dry; wherein the side of the graphene containing PMMA is in contact with the PDMS film. In this embodiment, a glass slide with a PDMS film can be prepared by taking the PDMS film and the glass slide and then attaching the PDMS film to the glass slide. S23. Press the glass slide containing graphene onto the source electrode 300 and the drain electrode 400 and heat it; Specifically, the chip sample with source electrode 300 and drain electrode 400 is placed on a displacement stage with heating function. A microscope is used to observe the area where graphene needs to be transferred. Under the microscope, a glass slide with graphene is pressed down above the source electrode 300 and drain electrode 400 of the chip sample. Then, heating is started. In this embodiment, the heating temperature is 130°C and the heating time is 90 seconds. S24. After heating is complete, the glass slide with the PDMS film is picked up. At this time, the PDMS film on the glass slide has separated from the graphene, and the graphene has been transferred to the chip sample. Next, the chip sample with graphene is immersed in acetone solution. Specifically, the chip sample is immersed in acetone solution three times, each time for 30 minutes, to remove PMMA from the surface of the graphene. Then, annealing is performed to complete the graphene transfer.
[0024] like Figure 2 As shown, step S3 includes the following steps: S31. Coat the annealed chip sample with photoresist; specifically, place the annealed chip sample in a spin coater, and then drop positive photoresist onto it for coating; S32. The chip sample coated with photoresist is exposed to a maskless pattern according to preset exposure parameters, and then developed; specifically, the chip sample coated with photoresist is exposed to a maskless pattern according to preset exposure parameters using a maskless lithography machine, and then developed by immersion in a developing solution. S33. Perform plasma etching on the developed chip sample; S34. Remove the photoresist from the etched chip sample to obtain the patterned graphene layer 200. It should be noted that the patterned structure in the patterned graphene layer 200 can be set as a disk micro / nano structure, and the patterned graphene layer 200 can be set as fully patterned or semi-patterned, which can be set according to the actual application requirements.
[0025] Example 2 This embodiment is a second embodiment of a method for fabricating a terahertz wave detector based on CMOS-graphene. This embodiment is similar to Embodiment 1, except that, as... Figure 3 and Figure 4 As shown, it also includes step S5: performing a photocurrent response test on the obtained terahertz wave detector; the photocurrent response test includes the following steps: S51. Set up a test system. The test system includes a test platform, a PCB circuit board set on the test platform, a terahertz laser, a polished mirror, a DC power supply, and an oscilloscope. The DC power supply is electrically connected to the PCB circuit board and the oscilloscope. In this implementation, the test system includes three DC power supplies, two of which are used to power the PCB circuit board and one DC power supply is used for waveform calibration to eliminate the influence of dark current in the terahertz wave detector itself. S52. The terahertz wave detector is fixed to the test platform via a PCB circuit board. The terahertz wave laser generates a frequency of 2.52 THz and a spot area of approximately 7.85 × 10⁻⁶. -7 m 2 The emitted terahertz waves are reflected by a parabolic mirror and then perpendicularly strike the surface of the terahertz wave detector to excite the patterned graphene layer 200 on the detector to generate a photocurrent. During the test, a bias voltage is maintained. V ds=0, when terahertz waves irradiate the patterned graphene layer 200, a current signal is generated between the source electrode 300 and the drain electrode 400. This current signal is then transmitted to the CMOS chip for processing. The CMOS chip converts the current signal into a voltage signal that can be seen on the oscilloscope and outputs it to the oscilloscope for display. It should be noted that the terahertz laser can be a FIRL100 terahertz laser. Furthermore, it is possible to observe the terahertz laser on an oscilloscope after it is turned off, and determine whether there is a photocurrent response by comparing the voltage difference between the voltage waveforms under and without terahertz laser irradiation. Figure 3 The diagram shows the test results of the CMOS-graphene-based terahertz wave detector prepared by the method of this invention under 2.52 THz laser irradiation and 69 mW power. The presence or absence of photocurrent response can be observed by the voltage difference in the voltage waveforms under and without THz irradiation. Figure 4 The figure shows the statistical distribution of the current responsivity of the CMOS-graphene-based terahertz wave detector prepared by the method of the present invention under 2.52THz laser irradiation. The terahertz wave detector can operate normally and has repeatable testing capabilities.
[0026] Example 3 This embodiment is the third embodiment of a method for fabricating a terahertz wave detector based on CMOS-graphene. This embodiment is similar to Embodiment 1 or 2, except that step S1 includes the following steps: S11. Remove the CMOS chip and clean it to remove contaminants; S12. The cleaned CMOS chip is subjected to a solution immersion method to perform a first zinc immersion, nitric acid zinc removal, and a second zinc immersion in sequence, and then a zinc layer 102 is obtained on the aluminum electrode layer 101 of the CMOS chip. S13. Nickel layer 103 is obtained by immersing zinc layer 102 in solution and heating it in a water bath. S14. Gold layer 104 is obtained by immersion in solution and heating in a water bath on nickel layer 103.
[0027] In this embodiment, step S11 includes the following steps: S111. Perform ultrasonic cleaning on the CMOS chip; specifically, take acetone, anhydrous ethanol and deionized water in sequence to perform ultrasonic cleaning on the surface of the CMOS chip, which can remove grease, dust and other organic contaminants on the aluminum electrode layer 101 of the CMOS chip; in this embodiment, the time for each ultrasonic cleaning can be set to 3 minutes. S112. After ultrasonic cleaning, the CMOS chip is immersed in a 10% sodium hydroxide solution to dissolve the aluminum oxide on the surface of the aluminum electrode layer 101 on the CMOS chip. Then, the aluminum electrode layer 101 is rinsed with room temperature deionized water to remove the residual sodium hydroxide solution on the surface. S113. Immerse the CMOS chip in a 20% nitric acid solution to dissolve the metal oxide residue on the surface of the aluminum electrode layer 101, and then rinse with room temperature deionized water to remove the residual nitric acid solution on the surface.
[0028] In this embodiment, step S12 includes the following steps: S121. Immerse the CMOS chip in aluminum zinc immersion solution and let it stand. Perform a first zinc immersion on the aluminum electrode layer 101. The first zinc immersion can provide catalytic active sites for the subsequent nickel immersion operation. Then rinse with room temperature deionized water to remove the residual aluminum zinc immersion solution on the surface. S122. Immerse the chip sample after the first zinc immersion in a 20% nitric acid solution and let it stand to remove the loose particles in the first zinc immersion. Then rinse with room temperature deionized water to remove the residual nitric acid solution on the surface. S123. The chip sample after zinc removal by nitric acid is immersed in aluminum zinc immersion solution and left to stand. A second zinc immersion is performed on the aluminum electrode layer 101. Then, it is rinsed with room temperature deionized water to remove the residual aluminum zinc immersion solution on the surface, and a zinc layer 102 is obtained. The second zinc immersion can obtain a denser and more uniform zinc layer, which enhances the subsequent bonding force with the nickel layer 103. In this embodiment, the immersion time of the first zinc immersion is longer than the immersion time of the second zinc immersion. In this embodiment, step S13 includes: immersing the chip sample with zinc layer 102 into a chemical nickel plating solution, and then heating it in a water bath to bring the chemical nickel plating solution to 90~100°C to obtain nickel layer 103.
[0029] In this embodiment, step S14 includes: immersing the chip sample with nickel layer 103 into a chemical gold plating solution, and then heating it in a water bath to bring the chemical gold plating solution to 90~100℃ to obtain gold layer 104.
[0030] The gold layer 104 obtained by the preparation method of the present invention is extremely stable in air and is not easily oxidized. It can provide a clean and active surface for wire bonding, greatly improving the bonding yield and long-term reliability. Moreover, the gold layer 104 hardly reacts with common media in the environment, has good corrosion resistance, and good stability.
[0031] Example 4 like Figures 5 to 6The illustration shows an embodiment of a CMOS-graphene-based terahertz wave detector of the present invention, comprising a substrate 100, a patterned graphene layer 200, a source electrode 300, and a drain electrode 400. The source electrode 300 and the drain electrode 400 are both connected to the surface of the substrate 100. The two ends of the patterned graphene layer 200 cover the source electrode 300 and the drain electrode 400, respectively. The substrate 100 is a CMOS silicon substrate. The source electrode 300 and the drain electrode 400 each include an aluminum electrode layer 101, a zinc layer 102, a nickel layer 103, and a gold layer 104 stacked from bottom to top, and the source electrode 300 and the drain electrode 400 are symmetrically arranged on the substrate 100.
[0032] The CMOS-graphene-based terahertz wave detector in this embodiment, composed of a substrate layer 100, a patterned graphene layer 200, a source electrode 300, and a drain electrode 400, exhibits good stability and supports identifiable and repeatable terahertz responses. Since both the source electrode 300 and the drain electrode 400 are composed of an aluminum electrode layer 101, a zinc layer 102, a nickel layer 103, and a gold layer 104, a good ohmic contact can be formed between the patterned graphene layer 200 and the source electrode 300, and between the patterned graphene layer 200 and the drain electrode 400. This results in an extremely low metal-semiconductor interface barrier, allowing charge carriers to flow freely and unimpeded between the electrodes and the graphene, leading to high electron mobility and effectively improving the detection performance of the CMOS-graphene-based terahertz wave detector. This CMOS-graphene-based terahertz wave detector can be prepared using the fabrication method described in any of the embodiments one to three.
[0033] In this embodiment, the patterned graphene layer 200 can be configured as a rectangular structure, and the length and width of the rectangular structure of the patterned graphene layer 200 can be configured as 2μm~3000μm; the source electrode 300 and the drain electrode 400 can both be configured as rectangular structures, and the side length of the rectangular structure of the electrodes can be configured as 10μm~1000μm.
[0034] In the specific implementation of the above embodiments, the technical features can be combined in any non-contradictory way. For the sake of brevity, not all possible combinations of the above technical features are described. However, as long as the combination of these technical features is not contradictory, it should be considered to be within the scope of this specification.
[0035] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.
Claims
1. A method for fabricating a terahertz wave detector based on CMOS-graphene, characterized in that, Includes the following steps: S1. Take a CMOS chip and sequentially perform zinc plating, nickel plating, and gold plating on the aluminum electrode layer (101) on the CMOS chip to obtain the source electrode (300) and drain electrode (400). S2. Take graphene, transfer the graphene to the source electrode (300) and drain electrode (400), and then perform annealing treatment; S3. The graphene on the annealed chip sample is patterned by maskless photolithography to obtain a patterned graphene layer (200). S4. Anneal the chip sample with the patterned graphene layer (200) to obtain a terahertz wave detector based on CMOS-graphene.
2. The method for fabricating a terahertz wave detector based on CMOS-graphene according to claim 1, characterized in that, Step S2 includes the following steps: S21. Release the graphene, cut to specifications, into pure water; S22. Take a glass slide with a PDMS film, then place the released graphene on the glass slide, and then air dry; wherein the side of the graphene containing PMMA is in contact with the PDMS film; S23. Press the glass slide containing graphene onto the source electrode (300) and drain electrode (400) and heat it; S24. After heating is complete, the glass slide with the PDMS film is picked up and then annealed to complete the graphene transfer.
3. The method for fabricating a terahertz wave detector based on CMOS-graphene according to claim 2, characterized in that, In step S21, the graphene is released in pure water for 2 hours; in step S23, the heating temperature is 130°C and the heating time is 90 seconds; in step S24, after picking up the glass slide with the PDMS film, the chip sample with graphene is immersed in acetone solution to remove the PMMA on the surface of the graphene; then annealing is performed.
4. The method for fabricating a terahertz wave detector based on CMOS-graphene according to claim 1, characterized in that, Step S3 includes the following steps: S31. Coat the annealed chip sample with photoresist; S32. The chip sample coated with photoresist is exposed to a maskless pattern according to the preset exposure parameters, and then developed; S33. Perform plasma etching on the developed chip sample; S34. Remove the photoresist from the etched chip sample to obtain a patterned graphene layer (200).
5. The method for fabricating a CMOS-graphene-based terahertz wave detector according to any one of claims 1 to 4, characterized in that, The method also includes step S5: performing a photocurrent response test on the obtained terahertz wave detector; the photocurrent response test includes the following steps: S51. Set up a test system, the test system including a test platform, a PCB circuit board set on the test platform, a terahertz laser, a polished mirror, a DC power supply, and an oscilloscope, the DC power supply being electrically connected to the PCB circuit board and the oscilloscope; S52. The terahertz wave detector is fixed to the test platform via the PCB circuit board. The terahertz wave laser generates terahertz waves, which are reflected by the parabolic mirror and then perpendicularly irradiate the surface of the terahertz wave detector to excite the patterned graphene layer (200) on the terahertz wave detector to generate photocurrent. During the test, the bias voltage is maintained. V ds =0, the CMOS chip of the terahertz wave detector converts the current signal into a voltage signal and outputs it to the oscilloscope for display.
6. The method for fabricating a CMOS-graphene-based terahertz wave detector according to any one of claims 1 to 4, characterized in that, Step S1 includes the following steps: S11. Remove the CMOS chip and clean it to remove contaminants; S12. The cleaned CMOS chip is subjected to a solution immersion method to perform a first zinc immersion, nitric acid zinc removal, and a second zinc immersion in sequence, and then a zinc layer (102) is obtained on the aluminum electrode layer (101) of the CMOS chip. S13. The zinc layer (102) is subjected to a solution immersion method and nickel deposition using a water bath heating method to obtain a nickel layer (103). S14. The nickel layer (103) is subjected to a solution immersion method and gold deposition using a water bath heating method to obtain a gold layer (104).
7. The method for fabricating a terahertz wave detector based on CMOS-graphene according to claim 6, characterized in that, Step S11 includes the following steps: S111. Perform ultrasonic cleaning on the CMOS chip; S112. Immerse the ultrasonically cleaned CMOS chip in a sodium hydroxide solution to dissolve the aluminum oxide on the surface of the aluminum electrode layer (101) on the CMOS chip; S113. Immerse the CMOS chip in nitric acid solution to dissolve the metal oxide residue on the surface of the aluminum electrode layer (101).
8. The method for fabricating a terahertz wave detector based on CMOS-graphene according to claim 6, characterized in that, Step S12 includes the following steps: S121. Immerse the CMOS chip in an aluminum zinc immersion solution and let it stand, and perform a zinc immersion on the aluminum electrode layer (101); S122. Immerse the chip sample after the first zinc immersion in nitric acid solution and let it stand to remove the loose particles in the first zinc immersion. S123. The chip sample after zinc removal by nitric acid is immersed in aluminum zinc immersion solution and left to stand. A second zinc immersion is performed on the aluminum electrode layer (101) to obtain the zinc layer (102). The soaking time for the first zinc immersion is longer than that for the second zinc immersion.
9. The method for fabricating a terahertz wave detector based on CMOS-graphene according to claim 6, characterized in that, Step S13 includes: immersing the chip sample with the obtained zinc layer (102) in a chemical nickel plating solution, and then heating it in a water bath to obtain the nickel layer (103). Step S14 includes: immersing the chip sample with the obtained nickel layer (103) in a chemical gold immersion solution, and then heating it in a water bath to obtain the gold layer (104).
10. A terahertz wave detector based on CMOS-graphene, characterized in that, The substrate includes a substrate (100), a patterned graphene layer (200), a source electrode (300), and a drain electrode (400). The source electrode (300) and the drain electrode (400) are both connected to the surface of the substrate (100). The patterned graphene layer (200) is connected to both the source electrode (300) and the drain electrode (400). The substrate (100) is a CMOS silicon substrate. The source electrode (300) and the drain electrode (400) each include an aluminum electrode layer (101), a zinc layer (102), a nickel layer (103), and a gold layer (104) stacked from bottom to top.