An optoelectronic device and a method of fabricating the same

By using a three-layer Ag nanoparticle gradient-doped PbS-PbX2 quantum dot structure, the problems of low photogenerated carrier collection efficiency and insufficient photon utilization in PbS quantum dot films are solved, thereby achieving a significant improvement in the high-efficiency optical and electrical performance of optoelectronic devices.

CN122138570APending Publication Date: 2026-06-02ANHUI LIANGXIN OPTOELECTRONICS TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ANHUI LIANGXIN OPTOELECTRONICS TECHNOLOGY CO LTD
Filing Date
2026-02-10
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In the existing technology, PbS quantum dot films have low photogenerated carrier mobility, making it difficult for photogenerated carriers to be quickly collected by the charge transport layer inside the film. Furthermore, the incident light decays rapidly inside the film, resulting in insufficient photon utilization and severely limiting the photoelectric conversion efficiency.

Method used

A three-layer Ag nanoparticle-doped PbS-PbX2 quantum dot structure is adopted, with the doping concentration designed to decrease in a gradient along the light incident direction. The first layer is highly doped to capture and attenuate the light signal through strong surface plasmon resonance, while the middle and bottom layers are moderately doped to maintain optical gain and avoid light scattering loss. A vertical conductive channel is constructed to optimize the carrier collection path.

Benefits of technology

It significantly improves the global light absorption rate and carrier collection efficiency of optoelectronic devices, synergistically enhances short-circuit current density and external quantum efficiency, improves the power conversion efficiency of devices, and achieves synergistic optimization of optical gain and electrical transmission.

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Abstract

This invention discloses an optoelectronic device and its fabrication method, belonging to the field of optoelectronic device technology. The photodetector, along its thickness direction, sequentially comprises: a substrate layer, an electron transport layer, a first Ag nanoparticle-doped PbS-PbX2 quantum dot layer, a second Ag nanoparticle-doped PbS-PbX2 quantum dot layer, a third Ag nanoparticle-doped PbS-PbX2 quantum dot layer, a PbS-EDT layer, and an electrode layer. The optoelectronic device structure of this invention overcomes the limitations of traditional non-gradient doped optoelectronic performance, synergistically enhancing the short-circuit current density, external quantum efficiency, and detectivity of the device, thereby improving the power conversion efficiency of the device.
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