Substrate processing apparatus and substrate processing method

Abstract

This invention relates to a substrate processing apparatus and a substrate processing method. According to an embodiment of the substrate processing apparatus, the apparatus comprises: a cavity having a processing space inside; a substrate support unit disposed in the processing space and used to support a substrate; a gas supply unit for supplying gas to the processing space; a plasma generation unit for plasmaizing the supplied gas; and a magnet module disposed above the cavity, including a permanent magnet and an electromagnet coil, and further including a position adjustment mechanism for adjusting the position of the magnet module.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method for controlling the plasma density by controlling the magnetic field of a magnet module. Background Technology

[0002] Typical processes for manufacturing semiconductor devices include vapor deposition for forming films on semiconductor substrates, chemical / mechanical polishing for planarizing films, photolithography for forming photolithographic patterns on films, etching for forming films with electrical properties using photolithographic patterns, ion implantation for implanting specific ions into predetermined areas of a substrate, cleaning processes for removing impurities from a substrate, and inspection processes for inspecting the surface of a substrate with films or patterns.

[0003] In the process described above, plasma can be used in part. To uniformly perform surface treatment across the entire substrate surface when plasma is generated, it is necessary to uniformly control the plasma density. However, the plasma density is high in the central region of the substrate and low in the edge regions, resulting in different etching patterns in the central and edge regions.

[0004] Therefore, in order to etch the entire substrate uniformly, it is important to uniformly control the density of the plasma generated inside the cavity. Summary of the Invention

[0005] This invention addresses existing problems by providing a substrate processing apparatus and method for controlling the density of plasma generated inside a cavity by controlling a magnetic field.

[0006] The problems to be solved by the present invention are not limited to those mentioned above, and those skilled in the art will clearly understand from the following description other problems not mentioned.

[0007] A substrate processing apparatus according to an embodiment of the present invention may include: a cavity having a processing space inside; a substrate support unit disposed in the processing space and used to support a substrate; a gas supply unit for supplying gas to the processing space; a plasma generation unit for plasmaizing the supplied gas; and a magnet module disposed above the cavity and including a permanent magnet and an electromagnet coil. The substrate processing apparatus further includes a position adjustment mechanism for adjusting the position of the magnet module.

[0008] In one embodiment, the magnet modules may be formed in multiple ways above the cavity and configured to form multiple concentric circles with the central magnet module as a reference.

[0009] In one embodiment, the position adjustment mechanism may include: a linear guide for moving the magnet module along a straight line; and a circular drive for changing the size of the concentric circles of the magnet module.

[0010] In one embodiment, the polarities of the permanent magnets may be the same or different between the concentric circles.

[0011] In one embodiment, the electromagnet coil in the magnet module may be wound around the outside of the permanent magnet.

[0012] In one embodiment, the magnet module may further include a magnetic core, which is combined with the electromagnet coil.

[0013] In one embodiment, the magnetic core may be positioned above the permanent magnet.

[0014] In one embodiment, the substrate processing apparatus may further include: at least one power supply unit connected to the electromagnet coil to input power to the electromagnet coil.

[0015] In one embodiment, the substrate processing apparatus may further include a control unit that controls the power supply unit and the position adjustment mechanism to control the plasma density.

[0016] According to an embodiment of the present invention, a substrate processing apparatus may include a cavity having a processing space inside; a substrate support unit disposed in the processing space and used to support a substrate; a gas supply unit for supplying gas to the processing space; a plasma generation unit for plasmaizing the supplied gas; a plurality of magnet modules formed above the cavity and including permanent magnets and electromagnet coils; and a control unit for controlling the magnet modules, the magnet modules being configured in a plurality of concentric circles with a central magnet module as a reference. The substrate processing apparatus includes a position adjustment mechanism for adjusting the position of the magnet modules, the position adjustment mechanism including: a linear guide for moving the magnet modules in a straight line; and a circular drive for changing the size of the concentric circles of the magnet modules. The position adjustment mechanism controls the position of the magnet modules, thereby controlling the density of the plasma generated inside the cavity.

[0017] In one embodiment, the electromagnet coil in the magnet module may be wound around the outside of the permanent magnet.

[0018] In one embodiment, the magnet module may further include a magnetic core, which is combined with the electromagnet coil.

[0019] In one embodiment, the magnetic core may be positioned above the permanent magnet.

[0020] In one embodiment, the polarities of the permanent magnets configured in the shape of the plurality of concentric circles may be the same or different among the concentric circles.

[0021] In one embodiment, the substrate processing apparatus may further include: at least one power supply unit connected to the electromagnet coil to input power to the electromagnet coil.

[0022] In one embodiment, the control unit may adjust the density of the plasma generated in the processing space by controlling the power supply unit.

[0023] According to one embodiment of the present invention, a substrate processing method may be used to process a substrate in a substrate processing apparatus, the substrate processing apparatus comprising: a cavity having a processing space inside; a substrate support unit disposed in the processing space and used to support the substrate; a gas supply unit for supplying gas to the processing space; a plasma generation unit for plasmaifying the supplied gas; a plurality of magnet modules formed above the cavity and including permanent magnets and electromagnet coils; and a position adjustment mechanism for adjusting the position of the magnet modules. The substrate processing method includes: a plasma generation step for generating plasma inside the cavity; a magnetic field determination step for determining, according to a process, the intensity and direction of a current applied to the magnet module from a power supply unit connected to the magnet module and the position of the magnet module; and a plasma control step for controlling the plasma density inside the cavity based on the intensity and direction of the magnetic field of the magnet module based on the determined intensity and direction of the current and the determined position of the magnet module.

[0024] In one embodiment, the position adjustment mechanism may include: a linear guide for moving the magnet module along a straight line; and a circular drive for changing the size of the concentric circles of the magnet module.

[0025] In one embodiment, the magnet module may further include a magnetic core, which is combined with the electromagnet coil.

[0026] In one embodiment, the magnet modules may be formed in multiple ways above the cavity and configured to form multiple concentric circles with the central magnet module as a reference.

[0027] According to the present invention, a magnet module can be manufactured using a permanent magnet, an electromagnet coil, and a magnetic core, and a position adjustment mechanism can be formed in the magnet module to control the magnet module by region.

[0028] Alternatively, the magnet modules can be controlled by region to reduce the deviation in plasma density generated within the substrate processing apparatus, and the plasma density can be controlled according to the process.

[0029] This allows the entire substrate to be etched uniformly, thus improving process yield.

[0030] However, the effects of the present invention are not limited to those mentioned above, and those skilled in the art to which this invention pertains can clearly understand other effects not mentioned from the figures below. Attached Figure Description

[0031] Figure 1 This is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 2 This is a diagram illustrating a magnet module according to an embodiment of the present invention.

[0033] Figure 3 This is a graph showing the change in the magnetic field of a current-based electromagnet according to a comparative example.

[0034] Figure 4 This is a diagram showing the magnetic field changes of a current-based magnet module according to an embodiment of the present invention.

[0035] Figure 5 This is a diagram illustrating the configuration of a magnet module according to an embodiment of the present invention.

[0036] Figure 6 This is a diagram illustrating a magnet module driven by a position adjustment mechanism according to an embodiment of the present invention.

[0037] Figure 7 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0038] Figure 8 This is a graph illustrating the variation of plasma density according to an embodiment of the present invention.

[0039] (Explanation of reference numerals in the attached diagram)

[0040] 10: Substrate processing apparatus

[0041] 100: Cavity

[0042] 200: Substrate support unit

[0043] 300: Gas supply unit

[0044] 400: Plasma Generation Unit

[0045] 500: Magnet Module

[0046] 600: Position Adjustment Mechanism

[0047] 700: Control Unit Detailed Implementation

[0048] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. However, the present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0049] When describing embodiments of the present invention, specific descriptions of known functions or structures are omitted when it is determined that such specific descriptions would unnecessarily obscure the spirit of the invention. Parts that perform similar functions and effects are referred to by the same reference numerals in all drawings.

[0050] At least some of the terminology used in this specification is defined with consideration of its function in this invention, and therefore may vary depending on the user's or operator's intent, conventions, etc. Consequently, the terminology should be interpreted based on the entire content of this specification.

[0051] Furthermore, in this specification, unless otherwise specified in the statements, the singular also includes the plural. In this specification, when a statement refers to the inclusion of a certain constituent element, unless specifically contradicted, it means that other constituent elements may be included, rather than excluding them.

[0052] On the other hand, in the accompanying drawings, for ease of understanding, the size or shape of the constituent elements, the thickness of the lines, etc., may be presented in a more or less enlarged manner.

[0053] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the accompanying drawings, the same or corresponding components are marked with the same reference numerals, regardless of the drawing numbers, and repeated descriptions of them are omitted.

[0054] Figure 1 This is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0055] Reference Figure 1 The substrate processing apparatus 10 may include a cavity 100, a substrate support unit 200, a gas supply unit 300, a plasma generation unit 400, a magnet module 500, a position adjustment mechanism 600, and a control unit 700.

[0056] The cavity 100 may have a processing space for performing plasma processes. Such a cavity 100 may have an exhaust port 102 at its lower part. The exhaust port 102 may be connected to an exhaust line equipped with a pump P. The exhaust port 102 can discharge reaction byproducts generated during the plasma process and residual gases inside the cavity 100 to the outside of the cavity 100 through the exhaust line. At this time, the internal space of the cavity 100 can be depressurized to a predetermined pressure.

[0057] The cavity 100 may have an opening 104 formed on its sidewall. The opening 104 can function as a passage for the substrate W to enter and exit the interior of the cavity 100. Such an opening 104 can be configured to open and close via a door assembly.

[0058] The baffle unit 120 serves to exhaust plasma process byproducts and unreacted gases. This baffle unit 120 can be disposed between the inner wall of the cavity 100 and the substrate support unit 200. The baffle unit 120 can be provided in an annular shape and can have multiple through holes extending in the vertical direction. The gas flow can be controlled according to the number and shape of the through holes in the baffle unit 120.

[0059] The substrate support unit 200 can be disposed in the lower middle region inside the cavity 100. The substrate support unit 200 can support the substrate W by electrostatic force. However, this embodiment is not limited to this, and the substrate W can be supported by various methods such as mechanical clamping or vacuum.

[0060] The substrate support unit 200 includes a support body 220 and an electrostatic chuck 240 disposed on the support body 220. The electrostatic chuck 240 may be configured to electrostatically adsorb the substrate W and may include a ceramic layer with electrodes inserted therein.

[0061] According to one embodiment of the present invention, although not illustrated, a heating element and a cooling element may be provided inside the substrate support unit 200 to maintain the substrate W at the process temperature. The heating element may be a heating coil, and the cooling element may be a cooling line for coolant flow.

[0062] Below the support body 220, a support member 260 may be provided for supporting the support body 220 and the electrostatic chuck 240. The support member 260 may be a cylindrical shape with a predetermined height and an internal space.

[0063] The gas supply unit 300 can supply the gas required for the process into the cavity 100. The gas supply unit 300 may include a gas supply source 302, a gas supply line 304, and a gas nozzle. The gas supply line 304 can connect the gas supply source 302 and the gas nozzle. The gas supply line 304 can supply gas stored in the gas supply source 302 to the gas nozzle. A valve 306 may be provided on the gas supply line 304 for opening and closing its passage or regulating the flow rate of fluid flowing through its passage.

[0064] Figure 1Only one gas supply source 302 and gas supply valve 306 are shown, but the gas supply source of the present invention may include multiple gas supply sources and multiple gas supply valves that can independently control the gas supply so that multiple gases can be supplied to the cavity 100.

[0065] The plasma generation unit 400 can generate plasma within the processing space of the cavity 100. The plasma can be formed within the cavity 100 in the upper region of the substrate support unit 200. According to an embodiment of the present invention, the plasma generation unit 400 can generate plasma within the processing space inside the cavity 100 using a capacitively coupled plasma (CCP) source.

[0066] However, this embodiment is not limited to this. It is also possible for the plasma generation unit 400 to generate plasma in the processing space inside the cavity 100 using an inductively coupled plasma (ICP) source or other plasma sources such as microwave.

[0067] The plasma generation unit 400 may include a high-frequency power supply 402 and a matching unit 404. The high-frequency power supply 402 can supply high-frequency power to either the upper or lower electrode to generate a potential difference between them. Here, the upper electrode may be the nozzle 420, and the lower electrode may be the substrate support unit 200. Alternatively, the high-frequency power supply 402 may be connected to the lower electrode, and the upper electrode may be grounded.

[0068] The nozzle 420 can be formed to be vertically opposed to the electrostatic chuck 240 inside the cavity 100. Such a nozzle 420 can have multiple gas injection holes to uniformly inject gas into the cavity 100, and can be provided with a diameter larger than that of the electrostatic chuck 240. Alternatively, the nozzle 420 can be manufactured using silicon as the material, or it is also possible to manufacture it using a metal material.

[0069] The magnet module 500 can be disposed above the cavity 100. According to an embodiment of the present invention, the magnet module 500 is formed outside the cavity 100, and the density of the plasma generated inside the cavity 100 can be controlled.

[0070] Figure 2 This is a diagram illustrating a magnet module according to an embodiment of the present invention.

[0071] Reference Figure 2The magnet module 500 may include a permanent magnet 520, an electromagnet coil 540, and a magnetic core 560. The electromagnet coil 540 may be connected to a power supply unit 542 for applying current to the electromagnet coil 540. According to an embodiment of the present invention, as Figure 2 As shown in (a), the magnet module 500 may include a permanent magnet 520 and an electromagnet coil 540, as Figure 2 As shown in (b), it may include all of the following: permanent magnet 520, electromagnet coil 540, and magnetic core 560.

[0072] like Figure 2 (a) The magnet module 500 may include a permanent magnet 520 and an electromagnet coil 540. The permanent magnet 520 may be a ring-shaped magnet made of materials such as neodymium (Nd) and samarium cobalt (SmCo). The electromagnet coil 540 may be wound multiple turns around the outer periphery of the permanent magnet 520. This form of magnet module 500 can reduce the overall size of the magnet module 500.

[0073] like Figure 2 (b) The magnet module 500 includes a permanent magnet 520, an electromagnet coil 540, and a magnetic core 560. The permanent magnet 520 may be a ring-shaped magnet made of materials such as neodymium (Nd) and samarium cobalt (SmCo). The electromagnet coil 540 may be wound in multiple turns around the outer circumference of the magnetic core 560. The magnetic core 560 with the electromagnet coil 540 wound around it may be located above the permanent magnet 520 and may be in a stacked form. In this case, the permanent magnet 520 may be positioned closer to the upper part of the cavity 100 than the magnetic core 560 with the electromagnet coil 540 wound around it. This type of magnet module 500 is easy to manufacture, and the replacement of the permanent magnet 520 is simple.

[0074] The electromagnet coil 540 can be connected to the power supply unit 542, and power can be supplied to the electromagnet coil 540 via the power supply line 544. One side of the power supply line 544 can be connected to the power supply unit 542, and the other side can be connected to the electromagnet coil 540. According to an embodiment of the present invention, at least one power supply unit 542 can be connected to the magnet module 500. The power supply unit 542 can be connected to the magnet module 500 to control the magnet module 500 individually or by area. As an example, the power supply unit 542 can control the magnet module 500 individually or by area. In addition, a patch (not shown) for shielding unwanted magnetic fields applied from the power supply line 544 can be formed on the other side of the power supply line 544.

[0075] When Figure 2When the magnet module 500 is constructed, the strength of the magnetic field of the magnet module 500 is enhanced, thus allowing for faster control of the plasma density generated inside the cavity 100. Additionally, heat generation can be reduced through lower power consumption. A first protrusion 502 and a second protrusion 504, described later, for connection with the position adjustment mechanism 600, can be formed on one and the other sides of such a magnet module 500. The size of the second protrusion 504 can be larger than the size of the first protrusion 502, but is not limited thereto. The following will utilize... Figure 2 The magnet module of (b) will be described.

[0076] Figure 3 This is a graph showing the change in the magnetic field of a current-based electromagnet according to a comparative example. Figure 4 This is a graph showing the magnetic field variation of a current-based magnet module according to an embodiment of the present invention. The strength of the magnetic field was confirmed while the current was varied from 0.0A to 0.8A.

[0077] Figure 3 In order to confirm the strength of the magnetic field, the distance D between the magnet (which combines an electromagnet coil and a magnetic core) and the magnetic field measuring device was fixed at 100 mm, and the current applied to the electromagnet coil was varied. The results confirmed that the magnetic field increased linearly with the increase of the current.

[0078] Figure 4 In this situation, using Figure 2 The strength of the magnetic field was confirmed by varying the distance D between the magnet module and the magnetic field measuring device, as well as the applied current, using the magnet module in (b). It can be confirmed that the magnetic field increases linearly with the increase of the current applied to the magnet module, and the strength of the magnetic field increases as the distance D between the magnet module and the magnetic field measuring device approaches.

[0079] like Figure 3 As shown, when a magnet is combined with an electromagnet coil and a magnetic core, the strength of the magnetic field ranges from 0.0 Gauss to 0.3 Gauss. Figure 4 As shown in (a), when a magnet module is constructed by combining a permanent magnet, an electromagnet coil, and a magnetic core, the magnetic field strength ranges from 6.4 Gauss to 6.8 Gauss. Based on these results, it can be confirmed that when the distance D to the magnetic field measuring device is the same, a magnet module using only a permanent magnet, an electromagnet coil, and a magnetic core has a much stronger magnetic field strength than the module using only an electromagnet coil and a magnetic core.

[0080] Figure 5 This is a diagram illustrating the configuration of a magnet module according to an embodiment of the present invention.

[0081] Reference Figure 1 as well as Figure 5Multiple magnet modules 500 can be formed on the upper part of the cavity 100, and can be arranged in multiple concentric circle shapes with reference to the central magnet module 500'. According to one embodiment of the invention, the magnet module 500 is shown to have two concentric circles 582 and 584 with reference to the central magnet module 500', but is not limited thereto. The polarities of the permanent magnets 520 disposed on the multiple concentric circles can be the same or different between the concentric circles. As an example, the permanent magnet 520 of the central magnet module 500' can have its N pole closer to the upper part of the cavity 100, or its S pole closer to the upper part of the cavity 100. The permanent magnets 520 of the magnet module 500 on the first concentric circle 582 can have their N pole closer to the upper part of the cavity 100, or their S pole closer to the upper part of the cavity 100. Additionally, the permanent magnets 520 on the second concentric circle 584 can have their N pole near the upper part of the cavity 100, or their S pole near the upper part of the cavity 100. As shown above, the polarities of permanent magnets 520 are formed in the same concentric circle, but the polarities may be different between the concentric circles.

[0082] Figure 6 This is a diagram illustrating a magnet module driven by a position adjustment mechanism according to an embodiment of the present invention.

[0083] Reference Figure 6 The position adjustment mechanism 600 may include a linear guide 620 for moving the magnet module 500 in a straight line and a circular drive 640 for changing the size of the concentric circles of the magnet module 500.

[0084] The linear guide portion 620 may have a track shape that blocks the movement of the magnet module 500. A second protrusion 504 formed on the other side of the magnet module 500 may be inserted into the linear guide portion 620 to allow the magnet module 500 to move in a straight line.

[0085] The circular drive unit 640 can change the size of the concentric circles of the magnet module 500. The circular drive unit 640 can rotate the magnet module 500 clockwise or counterclockwise while changing the size of the concentric circles. The circular drive unit 640 may include a first gear 642, a connecting rod 644, a second gear 646, and a circular drive mechanism 648 connected to the second gear 646 to rotate the multiple magnet modules 500. In this invention, the circular drive unit 640 is shown only formed in the first concentric circle 582, but is not limited thereto.

[0086] The first gear 642 can be connected to multiple magnet modules 500 via a connecting rod 644. Grooves 644a and 644b can be formed on both sides of the connecting rod 644. Specifically, one side groove 644b of the connecting rod 644 can engage with the first gear 642, while the other side groove 644a can engage with a first protrusion 502 formed on one side of the magnet module 500. The inner surface of the first gear 642 can have multiple serrated structures, and the outer surface can be smooth. Multiple gear protrusions 642a can be formed on the outer surface of the first gear 642 and engage with the groove 644b on one side of the connecting rod 644.

[0087] The second gear 646 may be smaller than the first gear 642, and a portion of the second gear 646 may mesh with the first gear 642. The second gear 646 can rotate the first gear 642 by a force supplied from a circular drive mechanism 648. The circular drive mechanism 648 may be a motor, but is not limited thereto.

[0088] According to the present invention, as the second gear 646 rotates via the circular drive mechanism 648, the first gear 642 meshing with the second gear 646 can rotate clockwise or counterclockwise. In this way, the magnet module 500 connected to the first gear 642 can move back and forth along the linear guide portion 620, thereby changing the size of the concentric circles of the magnet module 500.

[0089] As described above, a magnet module is formed using magnets, electromagnet coils, and a magnetic core. A position adjustment mechanism is used to change the position of the magnet module, thereby controlling the density of plasma generated inside the cavity. Specifically, the direction and intensity of the current supplied to the electromagnet coil of the magnet module are controlled, and the position of the magnet module is controlled by the position adjustment mechanism, thus uniformly controlling the plasma density inside the cavity. This improves the etching uniformity across the entire substrate and increases yield. Furthermore, because the magnet module enhances the magnetic field strength, the plasma density generated inside the cavity can be controlled more quickly. Additionally, the magnet module has low power consumption, thus reducing heat generation.

[0090] Refer again Figure 1The control unit 700 can comprehensively control the operation of the board processing apparatus 10 configured as described above. The control unit 700 can be, for example, a computer and includes an auxiliary storage device. The CPU can operate based on a program or processing conditions stored in the ROM or auxiliary storage device and control the overall operation of the board processing apparatus 10. Furthermore, the computer-readable program required for control can also be stored on a storage medium. The storage medium can be, for example, a flexible optical disc, a CD (Compact Disc), a CD-ROM, a hard disk, flash memory, or a DVD. The control unit 700 can be located inside or outside the board processing apparatus 10. When the control unit 700 is located externally, it can control the board processing apparatus 10 via wired or wireless communication components.

[0091] According to an embodiment of the present invention, the control unit 700 can control the supply of gas to the processing space inside the cavity 100 for the purpose of executing a process, and plasmaize the process gas supplied by the plasma generation unit 400. Specifically, the control unit 700 can control the power supply unit 542 connected to the magnet module 500 to control the intensity and direction of the current in the magnet module 500, and control the position adjustment mechanism 600 connected to the magnet module 500 to control the position of the magnet module 500, thereby adjusting the density of the plasma generated inside the cavity 100.

[0092] Figure 7 This is a diagram illustrating a substrate processing method according to an embodiment of the present invention. Figure 8 This is a graph illustrating the variation of plasma density according to an embodiment of the present invention.

[0093] Refer to together Figure 7 as well as Figure 8The substrate processing method can be used to process a substrate in a substrate processing apparatus, the substrate processing apparatus comprising: a cavity having a processing space inside; a substrate support unit disposed in the processing space and used to support the substrate; a gas supply unit for supplying gas to the processing space; a plasma generation unit for plasmaifying the supplied gas; a plurality of magnet modules formed above the cavity and including permanent magnets and electromagnet coils; and a position adjustment mechanism for adjusting the position of the magnet modules. The substrate processing method includes: a plasma generation step (S100) for generating plasma inside the cavity; a magnetic field determination step (S200) for determining, according to a process, the intensity and direction of a current applied to the magnet module from a power supply unit connected to the magnet module and the position of the magnet module; and a plasma control step (S300) for controlling the plasma density inside the cavity based on the intensity and direction of the magnetic field of the magnet module based on the determined intensity and direction of the current and the determined position of the magnet module.

[0094] The plasma generation step (S100) is a step in which plasma is generated inside the cavity. This can be achieved by supplying gas from a gas supply unit to the interior of the cavity, and then using a plasma generation unit to plasmaize the supplied gas.

[0095] The magnetic field determination step (S200) is a step of determining the intensity and direction of the current applied to the magnet module from the power supply unit connected to the magnet module, and the position of the position adjustment mechanism, according to the process. The magnet module according to an embodiment of the present invention may further include a magnetic core. The direction and intensity of the current supplied to the electromagnet coil from the power supply unit connected to the electromagnet coil can be determined according to the process. Furthermore, the position of the magnet module can be determined using the position adjustment mechanism according to the target etching rate of the substrate based on the process.

[0096] The plasma control step (S300) is a step of controlling the plasma density within the cavity based on the determined strength and direction of the magnetic field and the determined position of the magnet module. The strength and direction of the current determined in the magnetic field determination step (S200) are input to the power supply unit, and the position of the magnet module is controlled using a position adjustment mechanism, thereby controlling the density of the plasma generated inside the cavity. Specifically, as... Figure 8 As shown in (a), when the magnet module is not in operation, the plasma density inside the cavity forms a curved shape, resulting in varying etching rates across the entire substrate surface. This curved shape is achieved by using a positioning mechanism over a large area to adjust the position of the magnet module and control the intensity and direction of the current applied to it, thereby reducing the deviation in plasma density and flattening the plasma density shape. This allows for the uniform application of plasma across the entire substrate surface and uniform etching of the entire substrate surface.

[0097] The above description is merely an illustrative account of the technical concept of the present invention. Those skilled in the art can make various modifications and variations without departing from the essential characteristics of the invention. Therefore, the embodiments described herein are for illustrating the technical concept of the invention and are not intended to limit it. The technical concept of the invention is not limited to such embodiments. The scope of protection of the present invention should be interpreted through the appended claims, and all technical concepts within the same scope should be included within the scope of the claims.

Claims

1. A substrate processing apparatus, characterized in that, include: The cavity has processing space inside; A substrate support unit is disposed in the processing space and is used to support the substrate; A gas supply unit is used to supply gas to the processing space; A plasma generation unit for plasmaizing the supplied gas; and A magnet module, disposed above the cavity, includes a permanent magnet and an electromagnet coil. The substrate processing apparatus further includes a position adjustment mechanism for adjusting the position of the magnet module.

2. The substrate processing apparatus according to claim 1, characterized in that, Multiple magnet modules are formed above the cavity and are configured to form multiple concentric circles with the central magnet module as a reference.

3. The substrate processing apparatus according to claim 2, characterized in that, The position adjustment mechanism includes: A linear guide section for moving the magnet module in a straight line; and A circular drive unit is used to change the size of the concentric circles of the magnet module.

4. The substrate processing apparatus according to claim 2, characterized in that, The polarities of the permanent magnets may be the same or different between the concentric circles.

5. The substrate processing apparatus according to claim 1, characterized in that, In the magnet module, the electromagnet coil is wound around the outside of the permanent magnet.

6. The substrate processing apparatus according to claim 1, characterized in that, The magnet module also includes: The magnetic core is combined with the electromagnet coil.

7. The substrate processing apparatus according to claim 6, characterized in that, The magnetic core is located above the permanent magnet.

8. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes: At least one power supply unit is connected to the electromagnet coil to input power to the electromagnet coil.

9. The substrate processing apparatus according to claim 8, characterized in that, The substrate processing apparatus also includes a control unit. The control unit controls the power supply and the position adjustment mechanism to control the plasma density.

10. A substrate processing apparatus, characterized in that, include: The cavity has processing space inside; A substrate support unit is disposed in the processing space and is used to support the substrate; A gas supply unit is used to supply gas to the processing space; A plasma generation unit for plasmaifying the supplied gas; A magnet module, having multiple components formed above the cavity, includes permanent magnets and electromagnet coils; as well as The control unit is used to control the magnet module. The magnet modules are configured in a shape of multiple concentric circles with the central magnet module as the reference. The substrate processing apparatus includes a position adjustment mechanism for adjusting the position of the magnet module. The position adjustment mechanism includes: A linear guide is provided to move the magnet module in a straight line. as well as A circular drive unit is used to change the size of the concentric circles of the magnet module. The position of the magnet module is controlled by the position adjustment mechanism, thereby controlling the density of the plasma generated inside the cavity.

11. The substrate processing apparatus according to claim 10, characterized in that, In the magnet module, the electromagnet coil is wound around the outside of the permanent magnet.

12. The substrate processing apparatus according to claim 10, characterized in that, The magnet module also includes: The magnetic core is combined with the electromagnet coil.

13. The substrate processing apparatus according to claim 12, characterized in that, The magnetic core is located above the permanent magnet.

14. The substrate processing apparatus according to claim 10, characterized in that, The polarities of the permanent magnets configured in the shape of the plurality of concentric circles may be the same or different among the concentric circles.

15. The substrate processing apparatus according to claim 10, characterized in that, The substrate processing apparatus further includes: At least one power supply unit is connected to the electromagnet coil to input power to the electromagnet coil.

16. The substrate processing apparatus according to claim 15, characterized in that, The control unit adjusts the density of the plasma generated in the processing space by controlling the power supply unit.

17. A substrate processing method, characterized in that, A substrate processing apparatus is used to process a substrate in a substrate processing device, the substrate processing apparatus comprising: a cavity having a processing space inside; a substrate support unit disposed in the processing space and used to support the substrate; a gas supply unit for supplying gas to the processing space; a plasma generation unit for plasmaizing the supplied gas; a plurality of magnet modules formed above the cavity, including permanent magnets and electromagnet coils; and a position adjustment mechanism for adjusting the position of the magnet modules. The substrate processing method includes: The plasma generation step involves generating plasma inside the cavity. The magnetic field determination step involves determining, based on the process, the intensity and direction of the current applied to the magnet module from the power supply unit connected to the magnet module, and the position of the magnet module; and The plasma control step controls the plasma density within the cavity based on the strength and direction of the magnetic field of the magnet module, which is determined by the strength and direction of the current, and the determined position of the magnet module.

18. The substrate processing method according to claim 17, characterized in that, The position adjustment mechanism includes: A linear guide section for moving the magnet module in a straight line; and A circular drive unit is used to change the size of the concentric circles of the magnet module.

19. The substrate processing method according to claim 18, characterized in that, The magnet module also includes: The magnetic core is combined with the electromagnet coil.

20. The substrate processing method according to claim 17, characterized in that, Multiple magnet modules are formed above the cavity and are configured to form multiple concentric circles with the central magnet module as a reference.

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