Method of monitoring a word line
By employing electron beam scanning and depth index calculation methods, the problem of low detection efficiency caused by word line depth non-uniformity has been solved, enabling rapid and real-time word line depth monitoring, reducing detection time and wafer loss, and increasing production capacity.
CN122138673APending Publication Date: 2026-06-02WINBOND ELECTRONICS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WINBOND ELECTRONICS CORP
- Filing Date
- 2025-07-25
- Publication Date
- 2026-06-02
AI Technical Summary
Technical Problem
Existing technologies for monitoring word line depth in semiconductor components suffer from excessive time consumption and reduced production capacity, especially due to low detection efficiency caused by uneven word line depth.
Method used
Electron beam scanning combined with depth index calculation method is adopted. The word line depth index DI is calculated by formula (1). Regression analysis and three times standard deviation are used to monitor the uniformity of word line depth to avoid destructive scanning and production line stoppage.
Benefits of technology
It enables rapid, real-time monitoring of word line depth uniformity, saving inspection time, reducing wafer loss, and preventing reduced production capacity.
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Smart Images
Figure CN122138673A_ABST
Abstract
This invention provides a method for monitoring word lines, which is used to monitor the depth uniformity of multiple word lines located in multiple trenches in a substrate, and includes the following steps: Providing a depth index for the word line depth calculated by equation (1). Performing an electron beam scan on a first wafer, and obtaining multiple first DIs based on a preset θ, the SP and W of each of the multiple first word lines obtained by the scan, and equation (1). Obtaining multiple actual depths of the multiple first word lines. Calculating the R-value of the multiple first DIs and the multiple actual depths via regression analysis. 2 Value, confirm R 2 Not less than 0.9. The second wafer is subjected to the electron beam scan, resulting in multiple second DIs. Three times the standard deviation of the multiple second DIs is calculated, and the uniformity of the word line depth of the second wafer is monitored based on the three times standard deviation.
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