Method of measuring semiconductor structure, measuring apparatus and electronic device

Abstract

This disclosure provides a measurement method, measurement device, and electronic device for semiconductor structures. The semiconductor structure includes a vertically extending structure. The measurement method includes: determining a description model, the type of which is determined according to the type of the vertically extending structure, and the description model being used to describe the mapping relationship between spectral information and description parameters; incident light within a preset wavelength band onto the vertically extending structure at a preset incident angle to obtain the actual spectral information corresponding to the vertically extending structure; and determining the actual description parameters of the vertically extending structure based on the actual spectral information and the description model. The actual description parameters are description parameters defined with a preset shape corresponding to a preset position of the vertically extending structure; the preset position includes the top surface, bottom surface, and at least one preset depth of the vertically extending structure. The measurement method of this disclosure can more accurately obtain the actual description parameters of vertically extending structures with different morphological characteristics, improving the accuracy of the measurement results.

Description

Technical Field

[0001] In particular, it relates to a method, measuring device and electronic device for measuring semiconductor structures. Background Technology

[0002] In the fabrication of semiconductor structures, openings need to be formed in the wafer or substrate to facilitate the formation of structures such as capacitors or through-silicon vias (TSVs), thus creating columnar structures. These opening and columnar structures can be referred to as vertically extending structures (or vertically extending structures with closed cross-sections). Therefore, the morphological characteristics of vertically extending structures in semiconductor structures directly affect subsequent processing steps and have a significant impact on device performance.

[0003] Currently, the morphological characteristics of the vertical extension structure of a semiconductor structure can be measured using methods such as transmission electron microscopy (TEM). This involves destructively slicing the semiconductor structure to be measured and then scanning it with a TEM microscope to obtain test images. Data analysis of these images is then performed to determine the parameters of the morphological characteristics of the vertical extension structure. However, this measurement method suffers from problems such as long measurement time, low efficiency, and high cost. Summary of the Invention

[0004] This disclosure provides a method, apparatus, and electronic device for measuring semiconductor structures.

[0005] The first aspect of this disclosure provides a method for measuring a semiconductor structure, the semiconductor structure including a vertically extending structure, the measurement method comprising: A description model is determined, the type of which is determined based on the type of the vertical extension structure. The description model is used to describe the mapping relationship between spectral information and description parameters. Light within a preset wavelength band is incident onto the vertical extension structure at a preset incident angle to obtain the actual spectral information corresponding to the vertical extension structure. Based on the actual spectral information and the description model, the actual description parameters of the vertical extension structure are determined. The actual description parameters are description parameters defined with the cross-section corresponding to the preset position of the vertical extension structure as the preset shape. The preset position includes the position of the top surface, the bottom surface and at least one preset depth of the vertical extension structure.

[0006] According to some embodiments of this disclosure, the preset shape is elliptical.

[0007] According to some embodiments of this disclosure, the description parameters include one or more of the following: The depth of the vertically extending structure; The dimension of the major axis of the cross section; The dimensions of the minor axis of the cross section; The area of ​​the cross section; The ellipticity of the cross section is the ratio of the length of the major axis to the length of the minor axis of the cross section. The angle between the cross section and the direction of extension of the depth of the vertically extending structure; The rotation angle of the cross section is the rotation angle of the major axis of the cross section relative to a preset direction.

[0008] According to some embodiments of this disclosure, the description model includes a first description model or a second description model, wherein, The first description model is a non-fixed rotation angle model. In the first description model, when the rotation angle changes, the ellipticity changes accordingly, or when the rotation angle changes, the ellipticity remains unchanged. The rotation angle is the rotation angle of the actual major axis of the cross section relative to the preset direction, and the ellipticity is the ratio of the size of the actual major axis of the cross section to the size of the actual minor axis. The second descriptive model is a fixed rotation angle model. In the second descriptive model, the rotation angle is the preset angle or the rotation angle varies within a preset range. When the major axis of the cross section changes, the ellipticity of the cross section changes accordingly. The major axis of the cross section is a first axis that forms a preset angle with the preset direction or is within a preset range. The minor axis of the cross section is a second axis that is perpendicular to the first axis in the plane where the cross section is located. The ellipticity is the ratio of the size of the first axis to the size of the second axis.

[0009] According to some embodiments of this disclosure, the preset depth corresponds to the connection position of any two adjacent film layers of the semiconductor structure; and / or The preset depth corresponds to the location where the structural tilt angle of the semiconductor structure changes.

[0010] According to some embodiments of this disclosure, the description parameters further include: In any two adjacent membrane layers, the top dimension of the lower membrane layer at the connection position and the bottom dimension of the upper membrane layer at the connection position; and / or The relationship between the top dimension of the lower membrane layer and the bottom dimension of the upper membrane layer at the connection position in any two adjacent membrane layers; and / or The size of the film layer at the location where the structural tilt angle of the semiconductor structure changes.

[0011] According to some embodiments of this disclosure, determining the description model includes: Based on the type of the vertical extension structure, different semiconductor structure samples are provided, and each of the different semiconductor structure samples has a different vertical extension structure sample, thereby obtaining a description parameter sample of the vertical extension structure sample; Light within the preset wavelength band is incident on the vertically extended structure sample at the preset incident angle to obtain the spectral information sample corresponding to the vertically extended structure sample; The description model is determined based on the description parameter sample and the spectral information sample.

[0012] According to some embodiments of this disclosure, when the description model includes the first description model, providing different semiconductor structure samples, each of the different semiconductor structure samples having different vertical extension structure samples, and obtaining description parameter samples of the vertical extension structure samples, includes: providing a first vertical extension structure sample with at least different rotation angles at the preset position; the rotation angle is the rotation angle of the actual major axis of the cross-section of the first vertical extension structure sample at the preset position relative to the preset direction; the preset direction is determined according to a reference position, the reference position being a preset reference position of the wafer where the semiconductor structure sample is located; when the rotation angle changes, the ellipticity changes accordingly, or when the rotation angle changes, the ellipticity remains unchanged; The description parameter sample is determined based on the first vertical extension structure sample.

[0013] According to some embodiments of this disclosure, the first vertical extension structure sample is provided in at least one of the following manner: At least two sets of first vertical extension structure sub-samples with different rotation angles at the preset positions are provided as the first vertical extension structure samples, and the range of rotation angles of each set is different; At least two sets of second vertical extension structure sub-samples with different rotation angles and different ellipticities at the preset position are provided as the first vertical extension structure sample. The range of rotation angles and the range of ellipticities of each set are different. The ellipticity is the ratio of the actual major axis to the actual minor axis of the cross section of the first vertical extension structure sample at the preset position. In the second vertical extension structure sub-sample, the ellipticity is also different at different rotation angles.

[0014] According to some embodiments of this disclosure, when the description model includes the second description model, providing different semiconductor structure samples, each of the different semiconductor structure samples having different vertical extension structure samples, and obtaining description parameter samples of the vertical extension structure samples, includes: A second vertically extended structure sample with a different ellipticity at the preset position is provided; in the second vertically extended structure sample, a first axis that forms a preset angle with the preset direction or is within a preset range is used as the major axis of the cross section, and a second axis that is perpendicular to the first axis in the plane of the cross section is used as the minor axis of the cross section; the angle between the preset angle first axis and the preset direction is used as the rotation angle; the ellipticity is the ratio of the size of the first axis to the size of the second axis; the preset direction is determined according to a reference position, and the reference position is a preset reference position of the wafer where the semiconductor structure sample is located; The description parameter sample is determined based on the second vertical extension structure sample.

[0015] According to some embodiments of this disclosure, a second vertically extending structure sample with a different ellipticity at the preset position is provided in the following manner: Provide at least three sets of second vertically extended structure samples with different ellipticities at the preset positions, each set having a different range of ellipticity.

[0016] According to some embodiments of this disclosure, the measurement method further includes: Different semiconductor structure samples are provided using a preset repeating unit. Each preset repeating unit includes a preset number of initial semiconductor structure samples, and the initial semiconductor structure samples have initial vertically extending structure samples. Based on the initial description parameter sample of the initial vertical extension structure sample, the description parameter sample of the vertical extension structure sample is determined.

[0017] According to some embodiments of this disclosure, determining the description parameter sample of the vertical extension structure sample based on the initial description parameter sample of the initial vertical extension structure sample includes: The average value of the initial description parameter samples of the initial vertical extension structure sample is used as the description parameter sample of the vertical extension structure sample.

[0018] A second aspect of this disclosure provides a measuring apparatus for a semiconductor structure, the semiconductor structure including a vertically extending structure, the measuring apparatus for the semiconductor structure comprising: The first determining module is configured to determine a description model, the type of which is determined according to the type of the vertical extension structure, and the description model is used to describe the mapping relationship between spectral information and description parameters; The acquisition module is configured to incident light within a preset wavelength band onto the vertical extension structure at a preset incident angle in order to acquire the actual spectral information corresponding to the vertical extension structure. The second determining module is configured to determine the actual description parameters of the vertical extension structure based on the actual spectral information and the description model. The actual description parameters are description parameters defined with the cross-section corresponding to the preset position of the vertical extension structure as the preset shape. The preset position includes the position of the top surface, the bottom surface, and at least one preset depth of the vertical extension structure.

[0019] According to some embodiments of this disclosure, the preset shape is elliptical.

[0020] According to some embodiments of this disclosure, the description parameters include one or more of the following: The depth of the vertically extending structure; The dimension of the major axis of the cross section; The dimensions of the minor axis of the cross section; The area of ​​the cross section; The ellipticity of the cross section is the ratio of the length of the major axis to the length of the minor axis of the cross section. The angle between the cross section and the direction of extension of the depth of the vertically extending structure; The rotation angle of the cross section is the rotation angle of the major axis of the cross section relative to a preset direction.

[0021] According to some embodiments of this disclosure, the description model includes a first description model or a second description model, wherein, The first description model is a non-fixed rotation angle model. In the first description model, when the rotation angle changes, the ellipticity changes accordingly, or when the rotation angle changes, the ellipticity remains unchanged. The rotation angle is the rotation angle of the actual major axis of the cross section relative to the preset direction, and the ellipticity is the ratio of the size of the actual major axis of the cross section to the size of the actual minor axis. The second descriptive model is a fixed rotation angle model. In the second descriptive model, the rotation angle is the preset angle or the rotation angle varies within a preset range. When the major axis of the cross section changes, the ellipticity of the cross section changes accordingly. The major axis of the cross section is a first axis that forms a preset angle with the preset direction or is within a preset range. The minor axis of the cross section is a second axis that is perpendicular to the first axis in the plane where the cross section is located. The ellipticity is the ratio of the size of the first axis to the size of the second axis.

[0022] According to some embodiments of this disclosure, the preset depth corresponds to the connection position of any two adjacent film layers of the semiconductor structure; and / or The preset depth corresponds to the location where the structural tilt angle of the semiconductor structure changes.

[0023] According to some embodiments of this disclosure, the description parameters further include: In any two adjacent membrane layers, the top dimension of the lower membrane layer at the connection position and the bottom dimension of the upper membrane layer at the connection position; and / or The relationship between the top dimension of the lower membrane layer and the bottom dimension of the upper membrane layer at the connection position in any two adjacent membrane layers; and / or The size of the film layer at the location where the structural tilt angle of the semiconductor structure changes.

[0024] According to some embodiments of this disclosure, the first determining module is further configured to: Based on the type of the vertical extension structure, different semiconductor structure samples are provided, and each of the different semiconductor structure samples has a different vertical extension structure sample, thereby obtaining a description parameter sample of the vertical extension structure sample; Light within the preset wavelength band is incident on the vertically extended structure sample at the preset incident angle to obtain the spectral information sample corresponding to the vertically extended structure sample; The description model is determined based on the description parameter sample and the spectral information sample.

[0025] According to some embodiments of this disclosure, when the description model includes the first description model, the first determining module is further configured to: A first vertically extended structure sample with at least a different cross-section at the preset position is provided; the rotation angle is the rotation angle of the actual major axis of the cross-section of the first vertically extended structure sample at the preset position relative to the preset direction; the preset direction is determined according to a reference position, the reference position being a preset reference position of the wafer where the semiconductor structure sample is located; when the rotation angle changes, the ellipticity changes accordingly, or when the rotation angle changes, the ellipticity remains unchanged; The description parameter sample is determined based on the first vertical extension structure sample.

[0026] According to some embodiments of this disclosure, the first determining module is further configured to provide the first vertical extension structure sample in at least one of the following ways: At least two sets of first vertical extension structure sub-samples with different rotation angles at the preset positions are provided as the first vertical extension structure samples, and the range of rotation angles of each set is different; At least two sets of second vertical extension structure sub-samples with different rotation angles and different ellipticities at the preset position are provided as the first vertical extension structure sample. The range of rotation angles and the range of ellipticities of each set are different. The ellipticity is the ratio of the actual major axis to the actual minor axis of the cross section of the first vertical extension structure sample at the preset position. In the second vertical extension structure sub-sample, the ellipticity is also different at different rotation angles.

[0027] According to some embodiments of this disclosure, when the description model includes the second description model, the first determining module is further configured to: A second vertically extended structure sample with a different ellipticity at the preset position is provided; in the second vertically extended structure sample, a first axis that forms a preset angle with the preset direction or is within a preset range is used as the major axis of the cross section, and a second axis that is perpendicular to the first axis in the plane of the cross section is used as the minor axis of the cross section; the angle between the first axis and the preset direction is used as the rotation angle; the ellipticity is the ratio of the size of the first axis to the size of the second axis; the preset direction is determined according to a reference position, and the reference position is a preset reference position of the wafer where the semiconductor structure sample is located; The description parameter sample is determined based on the second vertical extension structure sample.

[0028] According to some embodiments of this disclosure, the first determining module is further configured to provide a second vertically extending structure sample with a different ellipticity at the preset position in the following manner: Provide at least three sets of second vertically extended structure samples with different ellipticities at the preset positions, each set having a different range of ellipticity.

[0029] According to some embodiments of this disclosure, the measuring device further includes: The acquisition module is configured to provide different semiconductor structure samples in preset repeating units. Each preset repeating unit includes a preset number of initial semiconductor structure samples, wherein the initial semiconductor structure samples have initial vertically extending structure samples. The processing module is configured to determine the description parameter sample of the vertical extension structure sample based on the initial description parameter sample of the initial vertical extension structure sample.

[0030] According to some embodiments of this disclosure, the processing module is further configured to: The average value of the initial description parameter samples of the initial vertical extension structure sample is used as the description parameter sample of the vertical extension structure sample.

[0031] A third aspect of this disclosure provides an electronic device comprising: processor; Memory used to store processor-executable instructions; The processor is configured to perform a measurement method for a semiconductor structure as described in any of the preceding claims.

[0032] A fourth aspect of this disclosure provides a non-transitory computer-readable storage medium, comprising: when instructions in the storage medium are executed by a processor of an electronic device, enabling the electronic device to perform a measurement method for a semiconductor structure as described in any of the preceding claims.

[0033] A fifth aspect of this disclosure provides a computer program product including computer instructions stored in a computer-readable storage medium; a processor of an electronic device reads the computer instructions from the computer-readable storage medium and executes the computer instructions to cause the electronic device to perform a measurement method for a semiconductor structure as described in any of the preceding claims.

[0034] The semiconductor structure measurement method provided in this disclosure introduces a description model to describe the mapping relationship between spectral information and description parameters of the vertically extended structure, and determines the type of description model according to different types of vertically extended structures. After obtaining the actual spectral information corresponding to the vertically extended structure, the actual description parameters of the vertically extended structure are determined based on the actual spectral information and the corresponding description model. The actual description parameters are description parameters defined with the cross-section corresponding to the preset position of the vertically extended structure as the preset shape, and the preset position of the vertically extended structure is the location of the top surface, bottom surface, and at least one depth of the vertically extended structure. This method can be applied to vertically extended structures with different morphological features and can more accurately obtain the actual description parameters of vertically extended structures with different morphological features, thus improving the accuracy of the measurement results.

[0035] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description

[0036] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of these embodiments. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the present disclosure, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without inventive effort.

[0037] Figure 1 This is a schematic diagram of a vertically extended structure of a semiconductor structure according to an exemplary embodiment.

[0038] Figure 2 This is a flowchart illustrating a method for measuring a semiconductor structure according to an exemplary embodiment.

[0039] Figure 3 This is a cross-sectional view of a vertically extending structure according to an exemplary embodiment.

[0040] Figure 4 This is a cross-sectional view of a vertically extending structure shown according to another exemplary embodiment.

[0041] Figure 5a This is a cross-sectional view showing a rotation angle of 0° and an unchanged ellipticity according to an exemplary embodiment.

[0042] Figure 5b It is a cross-sectional view showing a rotation angle of 30° and an unchanged ellipticity according to an exemplary embodiment.

[0043] Figure 5c It is a cross-sectional view showing a rotation angle of 60° and an unchanged ellipticity according to an exemplary embodiment.

[0044] Figure 6a This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0045] Figure 6b This is a cross-sectional view showing a rotation angle of 30° and a change in ellipticity according to an exemplary embodiment.

[0046] Figure 7a This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0047] Figure 7b This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0048] Figure 7c This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0049] Figure 8 This is a schematic diagram of different film layers of a semiconductor structure according to an exemplary embodiment.

[0050] Figure 9 This is a flowchart illustrating the determination of a descriptive model according to an exemplary embodiment.

[0051] Figure 10 This is a flowchart illustrating a sample of descriptive parameters for obtaining a vertically extended structure sample, according to an exemplary embodiment.

[0052] Figure 11aThis is a cross-sectional view showing a rotation angle of 0° and an unchanged ellipticity according to an exemplary embodiment.

[0053] Figure 11b It is a cross-sectional view showing a rotation angle of 30° and an unchanged ellipticity according to an exemplary embodiment.

[0054] Figure 11c It is a cross-sectional view showing a rotation angle of 60° and an unchanged ellipticity according to an exemplary embodiment.

[0055] Figure 11d It is a cross-sectional view showing a rotation angle of 90° and an unchanged ellipticity according to an exemplary embodiment.

[0056] Figure 11e It is a cross-sectional view showing a rotation angle of -60° and an unchanged ellipticity according to an exemplary embodiment.

[0057] Figure 11f This is a cross-sectional view showing a rotation angle of -30° and an unchanged ellipticity according to an exemplary embodiment.

[0058] Figure 11g This is a cross-sectional view showing a rotation angle of 0° and an unchanged ellipticity according to an exemplary embodiment.

[0059] Figure 12a This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0060] Figure 12b This is a cross-sectional view showing a rotation angle of 30° and a change in ellipticity according to an exemplary embodiment.

[0061] Figure 12c This is a cross-sectional view showing a rotation angle of 30° and a change in ellipticity according to an exemplary embodiment.

[0062] Figure 13a It is a cross-sectional view with a small rotation angle and a large ellipticity according to an exemplary embodiment.

[0063] Figure 13b It is a cross-sectional view of a medium rotation angle and a large ellipticity according to an exemplary embodiment.

[0064] Figure 13c It is a cross-sectional view showing a large rotation angle and a large ellipticity according to an exemplary embodiment.

[0065] Figure 13d This is a cross-sectional view with a small rotation angle and a medium ellipticity, according to an exemplary embodiment.

[0066] Figure 13eThis is a cross-sectional view showing a rotation angle and an ellipticity according to an exemplary embodiment.

[0067] Figure 13f This is a cross-sectional view of a large rotation angle and a medium ellipticity according to an exemplary embodiment.

[0068] Figure 13g It is a cross-sectional view with a small rotation angle and a small ellipticity according to an exemplary embodiment.

[0069] Figure 13h It is a cross-sectional view of a medium rotation angle and a small ellipticity according to an exemplary embodiment.

[0070] Figure 13i It is a cross-sectional view showing a large rotation angle and a small ellipticity according to an exemplary embodiment.

[0071] Figure 14 This is a flowchart illustrating the determination of a descriptive model in a semiconductor structure measurement method according to an exemplary embodiment.

[0072] Figure 15a This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0073] Figure 15b This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0074] Figure 15c This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0075] Figure 15d This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0076] Figure 15e This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0077] Figure 15f This is a cross-sectional view showing a rotation angle of 0° and a change in ellipticity according to an exemplary embodiment.

[0078] Figure 16a It is a cross-sectional view with a fixed rotation angle and a large ellipticity, according to an exemplary embodiment.

[0079] Figure 16b This is a cross-sectional view with a fixed rotation angle and a medium ellipticity, according to an exemplary embodiment.

[0080] Figure 16c It is a cross-sectional view with a fixed rotation angle and a small ellipticity, according to an exemplary embodiment.

[0081] Figure 17 This is a flowchart illustrating a method for measuring a semiconductor structure according to an exemplary embodiment, showing the determination of descriptive parameter samples of a vertically extended structural sample.

[0082] Figure 18 This is a block diagram of a measuring device according to an exemplary embodiment.

[0083] Figure 19 This is a block diagram of a computer device according to an exemplary embodiment.

[0084] Figure label: 1. Vertical extension structure; 11. Top surface; 12. Bottom surface; 13. Middle section; 10. Substrate; 20. First film layer; 30. Second film layer; 40. Third film layer; H, depth; α, rotation angle; β, structural tilt angle; d1, major axis; d2, minor axis; 501. First Determination Module; 502. Acquisition Module; 503. Second Determination Module; 504. Acquisition Module; 505. Processing Module; 1200. Computer equipment; 1201. Processor; 1202. Memory. Detailed Implementation

[0085] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0086] In related technologies, the morphological characteristics of the vertical extension structure of a semiconductor structure can be measured using methods such as transmission electron microscopy (TEM). This involves destructively slicing the semiconductor structure to be measured and then scanning it with a TEM microscope to obtain a test image. Data analysis of this image is then performed to obtain the parameters of the morphological characteristics of the vertical extension structure. However, this measurement method suffers from problems such as long measurement time, low efficiency, and high cost.

[0087] In this disclosure, to improve the efficiency and reduce the cost of measuring the morphological features of the vertical extension structure of a semiconductor structure, optical measurement techniques, such as Optical Critical Dimension (OCD), are introduced. Optical measurement techniques allow for the non-destructive measurement of the vertical extension structure of a semiconductor structure to obtain the actual spectral information corresponding to the vertical extension structure. Based on this actual spectral information and an established descriptive model that includes the spectral information and the descriptive parameters of the vertical extension structure, the actual descriptive parameters of the vertical extension structure can be determined. This measurement method has the advantages of being fast, non-destructive, and highly accurate.

[0088] Furthermore, to accommodate the variability of cross-sectional shape at different depths of the vertically extending structure when describing it, the actual description parameters are defined as those defined by the cross-section corresponding to a preset position of the vertically extending structure, where the preset position includes the top surface, bottom surface, and at least one preset depth of the vertically extending structure. Simultaneously, since the vertically extending structure in a semiconductor structure varies depending on the semiconductor device to be fabricated, different types of description models can be generated according to different types of vertically extending structures when creating the description model. Thus, the semiconductor structure measurement method provided in this disclosure is applicable not only to the measurement of vertically extending structures with relatively stable process structures and relatively small structural changes, but also to the measurement of vertically extending structures with relatively complex process structures and large structural changes.

[0089] This disclosure provides a measurement method for a semiconductor structure, including a vertically extending structure. The measurement method includes: determining a description model, the type of which is determined according to the type of the vertically extending structure, and the description model being used to describe the mapping relationship between spectral information and description parameters. Light within a preset wavelength band is incident on the vertically extending structure at a preset incident angle to obtain the actual spectral information corresponding to the vertically extending structure. Based on the actual spectral information and the description model, actual description parameters of the vertically extending structure are determined. The actual description parameters are description parameters defined with a preset shape based on a cross-section corresponding to a preset position of the vertically extending structure; the preset position includes the top surface, bottom surface, and at least one preset depth of the vertically extending structure. In this measurement method, a corresponding description model is selected according to the type of the vertically extending structure. After obtaining the actual spectral information corresponding to the vertically extending structure, the actual description parameters of the vertically extending structure at the preset position are determined based on the actual spectral information and the corresponding description model. The actual description parameters are description parameters defined with a preset shape based on a cross-section corresponding to the preset position of the vertically extending structure; the preset position includes the top surface, bottom surface, and at least one depth of the vertically extending structure. This approach can be applied to vertically extended structures with different morphological features, and can more accurately obtain the actual descriptive parameters of vertically extended structures with different morphological features, thereby improving the accuracy of measurement results.

[0090] An exemplary embodiment of this disclosure provides a method for measuring semiconductor structures, such as... Figure 1 As shown, the semiconductor structure includes a vertically extending structure 1, wherein the vertically extending structure 1 can be a structure with a closed cross-section, such as an open structure or a columnar structure. The open structure can be holes and / or trenches arranged periodically on the wafer, for example, the open structure can be a grating disposed on the wafer. The columnar structure can be a structure after filling the open structure with material, for example, the columnar structure can be a capacitor structure or a through-silicon via structure, etc.

[0091] like Figure 2 As shown, the measurement methods for semiconductor structures include: S100. Determine the description model. The type of description model is determined according to the type of vertical extension structure. The description model is used to describe the mapping relationship between spectral information and description parameters.

[0092] In step S100, the vertical extension structure 1 can be divided into several different types, and each vertical extension structure 1 corresponds to a descriptive model. During the measurement process, the corresponding descriptive model is determined according to the type of the vertical extension structure 1. The type of the vertical extension structure 1 can be classified according to the structural changes of the vertical extension structure 1.

[0093] In the descriptive model, there is a mapping relationship between spectral information and descriptive parameters. Both spectral information and descriptive parameters are theoretical values. The descriptive parameters are the parameters set by the vertical extension structure 1. The spectral information can be spectral curves, such as Psi (Ψ) (amplitude ratio of reflected light to incident light) curve, Delta (Δ) (phase difference between reflected light and incident light) curve, and reflectivity (ratio of reflected light intensity to incident light intensity) curve. Spectral curves can be calculated through rigorous coupled-wave analysis or finite element analysis.

[0094] S200. Inject light within a preset wavelength band onto the vertical extension structure at a preset incident angle to obtain the actual spectral information corresponding to the vertical extension structure.

[0095] In step S200, the actual spectral information corresponding to the vertical extension structure 1 can be measured by optical measurement methods. For example, the actual spectral information can be obtained by a spectral ellipsometer or a spectral reflectometer. The preset wavelength band can be 190-2000 nm, the preset incident angle includes an oblique incident angle or a vertical incident angle, the oblique incident angle can be 45°-75°, and the measurement light can be polarized light or unpolarized light. For example, in the wavelength band of 200-800 nm, polarized light is incident on the vertical extension structure 1 at a 45° oblique angle to obtain the actual spectral information corresponding to the vertical extension structure 1.

[0096] S300. Based on the actual spectral information and the description model, determine the actual description parameters of the vertical extension structure. The actual description parameters are the description parameters defined with the cross section corresponding to the preset position of the vertical extension structure as the preset shape. The preset position includes the position of the top surface, bottom surface and at least one preset depth of the vertical extension structure.

[0097] In step S300, the description model is used to describe the mapping relationship between spectral information and description parameters. Therefore, the actual spectral information is matched with the spectral information in the description model to output the description parameters corresponding to the spectral information. These description parameters can then be used as the actual description parameters of the vertical extension structure 1.

[0098] Here, the cross section refers to the section at 90° to the extension direction of the depth H of the vertical extension structure 1, which is the cross section of the vertical extension structure 1. The actual description parameters are description parameters defined with the cross section corresponding to a preset position of the vertical extension structure 1 as the preset shape. The preset position includes the top surface 11, the bottom surface 12 of the vertical extension structure 1, and the position of at least one preset depth. The position of at least one preset depth can be, for example, the middle part 13 of the vertical extension structure 1. Therefore, compared with the preset position only being on the top surface 11 and the bottom surface 12 of the vertical extension structure 1, a more complete description of the cross section of the vertical extension structure 1 can be achieved, so that the measurement of the morphological features of the vertical extension structure 1 is described by a three-dimensional contour, which is beneficial to characterizing the true morphological features of the vertical extension structure 1.

[0099] In this embodiment, the description model is determined by the type of the vertical extension structure 1, and the preset position of the vertical extension structure 1 is set as the position of the top surface 11, bottom surface 12 and at least one depth H of the vertical extension structure 1. This can be applied to vertical extension structures 1 with different morphological features, and can more accurately obtain the actual description parameters of vertical extension structures 1 with different morphological features.

[0100] It should be noted that the terms "S100" and "S200" in this disclosure are only used to more clearly explain the technical solution of this disclosure, and are not intended to limit this disclosure. During the measurement process, the order of steps S100 and S200 can be adjusted according to the actual situation. For example, step S200 can be executed first, where light within a preset wavelength band is incident on the vertical extension structure 1 at a preset incident angle to obtain the actual spectral information corresponding to the vertical extension structure 1. Then, step S100 can be executed to determine the description model. The type of the description model is determined according to the type of the vertical extension structure 1. The description model is used to describe the mapping relationship between spectral information and description parameters.

[0101] In one exemplary embodiment, such as Figure 3 As shown, the default shape is an ellipse.

[0102] In this embodiment, the preset shape can be elliptical, that is, the cross-section can be an elliptical cross-section. The elliptical cross-section can include more descriptive parameters to more accurately characterize the morphological features of the vertical extension structure 1. Specifically, when the vertical extension structure 1 is a hole, the preset shape can be elliptical; when the vertical extension structure 1 is a groove, the preset shape can also be rectangular.

[0103] In one exemplary embodiment, the description parameters include one or more of the following: The depth H of the vertically extending structure 1; The dimension of the major axis d1 of the cross section; The dimension of the minor axis d2 of the cross section; The area of ​​the cross section; The ellipticity of a cross section is the ratio of the size of the major axis d1 to the size of the minor axis d2 of the cross section. The angle between the cross section and the extension direction of the depth H of the vertically extending structure 1; The rotation angle α of the cross section is the rotation angle α of the major axis d1 of the cross section relative to the preset direction.

[0104] Among them, such as Figure 1 As shown, the depth H of the vertical extension structure 1 is the distance between the top surface 11 and the bottom surface 12 of the vertical extension structure 1. Figure 3 As shown, the major axis d1 of the cross-section can be the longest actual axis in the cross-section, and the minor axis d2 can be the shortest actual axis in the cross-section. Alternatively, as... Figure 4 As shown, the major axis d1 of the cross-section can be an axis defined by a preset definition, and the minor axis d2 of the cross-section can be an axis perpendicular to the major axis d1. The inclination angle or included angle of the sidewall of the vertically extending structure 1 relative to the horizontal plane or the cross-section can be called the structural inclination angle β or the sidewall angle β. In the figures of this disclosure, d1 represents the major axis of the cross-section, d2 represents the minor axis of the cross-section, and α represents the rotation angle, which will not be elaborated further below.

[0105] The preset direction can be determined by using a preset reference position on the wafer where the semiconductor structure is located as a reference position. It should be noted that the preset reference position of the wafer is not the same as the preset position of the vertically extending structure 1. The preset position of the vertically extending structure 1 includes the positions of its top surface 11, bottom surface 12, and at least one preset depth. The preset reference position of the wafer can be, for example, the notch position of the wafer. The preset direction is determined based on the notch position of the wafer; for example, the preset direction can be a direction determined based on the notch position in a horizontal plane. The rotation angle α can be, for example, the rotation angle α of the major axis d1 of the cross-section relative to the preset direction. Figure 3 The preset direction is the horizontal direction along the X-axis; however, in actual scenarios, the horizontal direction can also be selected. The rotation angle α is the angle between the major axis d1 of the cross-section and the horizontal direction. In this embodiment, by describing multiple parameters of the vertical extension structure 1, the directional characteristics, contour tilt, degree of rotation, and other morphological features of the vertical extension structure 1 can be described. This facilitates the characterization of changes in the vertical extension structure 1 under specific process conditions and plays a crucial role in monitoring the performance of semiconductor devices.

[0106] In one exemplary embodiment, the description model includes a first description model or a second description model, wherein, The first descriptive model is a non-fixed rotation angle model. In the first descriptive model, the ellipticity changes when the rotation angle α changes, or the ellipticity remains unchanged when the rotation angle α changes. The rotation angle α is the rotation angle α of the actual major axis of the cross section relative to the preset direction, and the ellipticity is the ratio of the size of the actual major axis of the cross section to the size of the actual minor axis.

[0107] In this embodiment, the first descriptive model is a non-fixed rotation angle model. A non-fixed rotation angle refers to using the angle α between the actual major axis of the cross-section at a preset position and the preset direction. That is, in the vertically extending structure 1, if the degree of rotation relative to the preset direction differs at different preset positions, the angle between the actual major axis of the corresponding cross-section and the predetermined preset direction will also be different. If the degree of rotation relative to the preset direction is the same at different preset positions, the angle between the actual major axis of the corresponding cross-section and the predetermined preset direction will also be the same.

[0108] In the first descriptive model, the ellipticity is the ratio of the actual major axis to the actual minor axis. As the rotation angle α changes, the directions of the actual major and minor axes of the cross-section change, and the ellipticity may or may not change with the rotation angle α. For example... Figure 5a , Figure 5b , Figure 5c As shown, when the rotation angle α changes from 0° to 30° and then to 60°, the actual major and minor axes of the cross-section remain unchanged; therefore, the corresponding ellipticity remains unchanged. Figure 6a and Figure 6b As shown, when the rotation angle α changes from 0° to 30°, the dimensions of the actual major axis and the actual minor axis of the cross section change, and therefore, the corresponding ellipticity also changes.

[0109] In the first descriptive model, rotation angles α and ellipticity at different preset positions are used as descriptive parameters for the vertical extension structure 1, thus accurately describing the degree of rotation of the vertical extension structure 1 relative to a preset direction at different preset positions. Therefore, the first descriptive model is suitable for measuring vertical extension structures that focus on the degree of rotation along the depth direction, such as along a cross-section of a semiconductor structure from top to bottom, and that require measurements of the maximum and minimum dimensions, area, and ellipticity of the cross-section. Ellipticity characterizes the deflection of the cross-section relative to the preset direction when the cross-section at the corresponding preset position is described as an ellipse, and the changes in the dimensions of the major axis d1 and minor axis d2 of the cross-section after the deflection.

[0110] In an exemplary embodiment, the second descriptive model is a fixed-angle model. In the second descriptive model, the rotation angle α is a preset angle or varies within a preset range. When the major axis d1 of the cross section changes, the ellipticity of the cross section changes accordingly. The major axis d1 of the cross section is a first axis that forms a preset angle with a preset direction or is within a preset range. The minor axis d2 of the cross section is a second axis that is perpendicular to the first axis in the plane containing the cross section. The ellipticity is the ratio of the size of the first axis to the size of the second axis.

[0111] In this embodiment, the second descriptive model is a fixed rotation angle model. A fixed rotation angle refers to setting the rotation angle α at different preset positions to a fixed value, such as a preset angle or a range within a preset range, for example, 1°-10°. Correspondingly, at different preset positions, the directions of the actual major axis and the actual minor axis change, and their dimensions also change. In the second descriptive model, the major axis d1 of the cross-section is a first axis that forms a preset angle with the preset direction or is within a preset range, and the minor axis d2 of the cross-section is a second axis perpendicular to the first axis in the plane containing the cross-section. Therefore, the actual major axis and the first axis may or may not be the same axis; the actual minor axis and the second axis may or may not be the same axis.

[0112] For example, such as Figures 7a-7c As shown, in Figures 7a-7c In the given example, the preset direction is along the X-axis in the diagram, and the rotation angle α is 0°; where red dashed lines c1 and c2 represent the actual major and minor axes of the cross-section, respectively; black dashed lines d1 and d2 represent the first and second axes of the cross-section, respectively. Figure 7a In the diagram, the actual major axis is coaxial with the first axis and has the same dimensions, and the actual minor axis is coaxial with the second axis and has the same dimensions. Figure 7b In the case of the first axis, the actual major axis is not on the same axis and the size is different from the first axis, and the actual minor axis is not on the same axis and the size is different from the second axis. Figure 7c In this case, the actual major axis is not on the same axis as the first axis, the actual minor axis is not on the same axis as the second axis, and the length of the first axis is less than the length of the second axis.

[0113] In the second descriptive model, the corresponding cross-section is described by setting the rotation angle α at different preset positions to a fixed value or allowing it to float within a preset range, focusing more on the change in ellipticity. This second descriptive model is suitable for measurement types of vertically extending structures where the process structure is relatively stable and the change along the depth direction of the vertically extending structure is relatively small.

[0114] The preset depth can be any position; for example, it can be determined according to process requirements, selecting a position at any depth. In an exemplary embodiment, the preset depth corresponds to the connection position of any two adjacent film layers in the semiconductor structure; and / or the preset depth corresponds to the position where the structural tilt angle of the semiconductor structure changes.

[0115] In a semiconductor structure, the film layer can be a single material layer or a stacked structure formed by stacking multiple layers of different materials. Due to differences in material and etching process, the morphological characteristics of the vertically extending structure 1 formed in the film layer will also differ. Therefore, in an exemplary embodiment, the selection of the preset depth can correspond to the connection position of any two adjacent film layers in the semiconductor structure, so as to perform layered modeling of the semiconductor structure, which is beneficial to more accurately characterize the morphological characteristics of the vertically extending structure 1 in different film layers.

[0116] For example, such as Figure 8 As shown, the semiconductor structure includes a substrate 10 and a first film layer 20, a second film layer 30, and a third film layer 40 sequentially stacked on the substrate 10, with a vertically extending structure 1 formed in the first film layer 20, the second film layer 30, and the third film layer 40; wherein the first film layer 20, the second film layer 30, and the third film layer 40 are made of different materials, and the cross-sectional shape of the vertically extending structure 1 of each film layer can be... Figure 8 As shown in A, B, C, and D, it can be seen that the morphological characteristics of the vertically extended structures formed in different film layers are also different.

[0117] The preset depth can also be a location of process anomalies or a location where the process requires special attention. For example, the preset depth can be a location where the structural tilt angle β changes. For instance, when forming the vertically extending structure 1, the cross-section of the vertically extending structure 1 may change due to process variations, such as the cross-sectional size becoming larger or smaller. The angle β between the horizontal plane or the cross-section and the extension direction of the sidewall of the vertically extending structure 1 will also change accordingly. In this case, the preset depth can be selected as the location where the structural tilt angle β changes, so as to facilitate the measurement of the morphological characteristics of the semiconductor structure at that location.

[0118] In one exemplary embodiment, the describing parameters further include: the top dimension of the lower membrane layer and the bottom dimension of the upper membrane layer at the connection position in any two adjacent membrane layers; and / or The relationship between the top dimension of the lower membrane layer and the bottom dimension of the upper membrane layer at the connection point in any two adjacent membrane layers; and / or The size of the film layer at the location where the structural tilt angle of the semiconductor structure changes.

[0119] In practice, a descriptive model can be established for each vertical extension structure 1 of each film layer separately; or a descriptive model can be established for the overall vertical extension structure 1 including multiple film layers, which is not limited in this disclosure. Taking the establishment of a descriptive model for the overall vertical extension structure 1 including multiple film layers as an example, in order to better describe the dimensional relationship between each adjacent film layer, the descriptive model can describe the relationship between the top dimension of the lower film layer at the connection position and the bottom dimension of the upper film layer at the connection position and / or the relationship between the top dimension of the lower film layer at the connection position and the bottom dimension of the upper film layer at the connection position; and / or the dimensions of the film layer at the position where the structural tilt angle of the semiconductor structure changes, so as to more accurately characterize the morphological features of the vertical extension structure 1 with different film layers.

[0120] In an exemplary embodiment, step S100 in the above embodiments is further explained, such as... Figure 9 As shown, the descriptive model includes: S110. Based on the type of vertical extension structure, provide different semiconductor structure samples. Each different semiconductor structure sample has a different vertical extension structure sample, and obtain the description parameter sample of the vertical extension structure sample.

[0121] In step S110, the semiconductor structure sample can be a wafer with different ellipticities and different rotation angles α. The semiconductor structure sample can be obtained by slicing on a wafer, wherein a preset direction can be determined based on the cut position of the wafer. The descriptive parameter sample of the vertically extending structure sample can be measured by transmission electron microscopy. The descriptive parameter sample includes one or more of the following: the depth H of the vertically extending structure 1; the size of the major axis d1 of the cross section; the size of the minor axis d2 of the cross section; the area of ​​the cross section; the ellipticity of the cross section, which is the ratio of the size of the major axis d1 of the cross section to the size of the minor axis d2 of the cross section; the angle between the cross section and the extension direction of the depth H of the vertically extending structure 1; the rotation angle α of the cross section, which is the rotation angle α of the major axis d1 of the cross section relative to the preset direction. The meaning of each parameter in the descriptive parameter sample is the same as the meaning of each parameter in the descriptive parameters, and will not be repeated here.

[0122] S120. Induce light within a preset wavelength band to the vertically extended structure sample at a preset incident angle to obtain the spectral information sample corresponding to the vertically extended structure sample.

[0123] In step S120, the spectral information sample corresponding to the vertically extended structure sample can be measured by optical measurement methods. For example, the spectral information sample can be obtained by a spectral ellipsometer or a spectral reflectometer. The preset wavelength band can be 190-2000 nm, the preset incident angle can be an oblique incident angle or a vertical incident angle, the oblique incident angle can be 45°-75°, and the measurement light can be polarized light or unpolarized light. For example, in the wavelength band of 200-800 nm, polarized light is incident on the vertically extended structure sample at a 45° oblique angle to obtain the spectral information sample corresponding to the vertically extended structure sample.

[0124] S130. Determine the description model based on the description parameter sample and the spectral information sample.

[0125] In step S130, a mapping relationship between the description parameter samples and the spectral information samples is established based on the obtained description parameter samples and spectral information samples to determine the description model.

[0126] In one exemplary embodiment, such as Figure 10 As shown, when the description model includes the first description model, i.e., when the description model is a non-fixed-angle model, different semiconductor structure samples are provided. Each different semiconductor structure sample has a different vertical extension structure sample. The description parameter samples of the vertical extension structure samples are obtained, including: S110-11. Provide a first vertically extended structure sample with at least different cross-sections at a preset position; the rotation angle is the rotation angle of the actual major axis of the cross-section of the first vertically extended structure sample at the preset position relative to a preset direction; the preset direction is determined according to a reference position, which is a preset reference position of the wafer where the semiconductor structure sample is located; when the rotation angle changes, the ellipticity changes accordingly or when the rotation angle changes, the ellipticity remains unchanged.

[0127] In steps S110-11, the preset position refers to the preset position of the first vertical extension structure sample, which includes the position of the top surface, bottom surface and at least one preset depth of the first vertical extension structure sample.

[0128] The preset direction is determined based on a reference position, which is the preset reference position of the wafer where the semiconductor structure sample is located. The preset reference position of the wafer can be the notch position of the wafer. By using the notch position of the wafer as the reference position to determine the preset direction, the description parameters of the vertically extended structure 1 can be accurately determined.

[0129] In other words, the preset direction can also be determined based on the design direction of the semiconductor structure sample. The design direction of the semiconductor structure sample can be parallel to the cut position of the wafer or perpendicular to the cut position of the wafer.

[0130] The first vertical extension structure sample can provide multiple cross-sections at different preset positions, each with a different rotation angle α, to construct different first descriptive models, thereby improving the accuracy of the first descriptive model in describing the morphological features of the vertical extension structure 1. For example, the first vertical extension structure sample can be provided in one or more of the following ways to construct the first descriptive model: Multiple first vertical extension structure samples with different cross sections and rotation angles α are provided at the same preset position. The ellipticity of the cross section of each first vertical extension structure sample remains constant as the rotation angle α changes. Multiple first vertical extension structure samples with different cross sections and rotation angles α are provided at the same preset position. The ellipticity of the cross section of each first vertical extension structure sample changes with the rotation angle α. Multiple first vertical extension structure samples with different cross sections and rotation angles α at different preset positions are provided. The ellipticity of the cross section of each first vertical extension structure sample remains constant as the rotation angle α changes. Multiple first vertical extension structure samples with different cross sections and rotation angles α are provided at different preset positions. The ellipticity of the cross section of each first vertical extension structure sample changes with the rotation angle α.

[0131] The selection of the first vertical extension structure sample, the preset position, and the number of cross-sections at the preset position can be determined according to requirements, and this disclosure does not impose any limitations. The rotation angle α of the cross-section of the first vertical extension structure sample can be -90° to 90°, and the variation range of the rotation angle α can be determined according to the number of cross-sections. To improve the accuracy of modeling, multiple cross-sections of each ellipticity and rotation angle can also be set. For example, the number of cross-sections with different rotation angles α can be 3-20 groups, and each group can have 4-10 cross-sections with the same rotation angle α and ellipticity or cross-sections with rotation angles α and ellipticity varying within a given range; the rotation range of the rotation angle α is that the variation range of the rotation angle α can be 5° to 60°.

[0132] For example, such as Figures 11a-11g As shown, Figures 11a-11g In the given example, when the rotation angle α changes, the actual major axis and actual minor axis of the cross section remain unchanged, therefore the ellipticity of the cross section also remains unchanged; where, Figures 11a-11g In the process, the rotation angle α varies by 30°, and the rotation angles α are 0°, 30°, 60°, 90°, -60°, -30°, and 0° respectively.

[0133] like Figures 12a-12c As shown, Figure 12a and Figure 12bIn the given example, when the rotation angle α changes from 0° to 30°, the actual major axis of the cross section changes accordingly, while the actual minor axis of the cross section remains unchanged. Therefore, the ellipticity of the cross section also changes accordingly. Figure 12a and Figure 12c In the given example, when the rotation angle α changes from 0° to 30°, the actual major axis and actual minor axis of the cross section change, and therefore the ellipticity of the cross section also changes.

[0134] S110-12. Determine the description parameter sample based on the first vertical extension structure sample.

[0135] In steps S110-12, the descriptive parameters of the first vertically extended structure sample can be measured by transmission electron microscopy.

[0136] In one exemplary embodiment, a first vertically extending structure sample is provided in at least one of the following ways: At least two sets of first vertical extension structure sub-samples with different rotation angles α at preset positions are provided as first vertical extension structure samples, with each set having a different range of rotation angle α. At least two sets of second vertical extension structure sub-samples with different rotation angles α and different ellipticities at preset positions are provided as first vertical extension structure samples, with each set having a different range of rotation angle α and a different range of ellipticity; the ellipticity is the ratio of the actual major axis to the actual minor axis of the cross-section of the first vertical extension structure sample at the preset position; in the second vertical extension structure sub-samples, the ellipticity is also different under different rotation angles α.

[0137] The number of first vertical extension structure sub-samples and the number of second vertical extension structure sub-samples are not limited. For example, the number of first vertical extension structure sub-samples and second vertical extension structure sub-samples can be two to ten groups, and the number of second vertical extension structure sub-samples can be two to ten groups. For example, the number of first vertical extension structure sub-samples and second vertical extension structure sub-samples can be two, three, six, ten, etc.

[0138] For example, the illustration uses three groups of samples: the first vertical extension structure sub-sample and the second vertical extension structure sub-sample. In the first vertical extension structure sub-sample, the rotation angle α in each group of samples has a different range. Taking a rotation angle α in the range of 0° to 90° as an example, the rotation angle α in the first group of samples ranges from 0° to 30°, the rotation angle α in the second group of samples ranges from 30° to 60°, and the rotation angle α in the third group of samples ranges from 60° to 90°. The ellipticity of each group of samples can be the same or different. For example, the first group of samples can have a rotation angle α varying within the range of 0° to 30° with the same ellipticity, or the first group of samples can have a rotation angle α varying within the range of 0° to 30° with the ellipticity varying with the rotation angle α. Therefore, the second set of samples can be samples where the rotation angle α varies within the range of 30° < α ≤ 60°, with the same ellipticity; or the second set of samples can be samples where the rotation angle α varies within the range of 30° < α ≤ 60°, with the ellipticity changing with the rotation angle α. Similarly, the third set of samples can be samples where the rotation angle α varies within the range of 60° < α ≤ 90°, with the same ellipticity; or the third set of samples can be samples where the rotation angle α varies within the range of 60° < α ≤ 90°, with the ellipticity changing with the rotation angle α. Likewise, a first vertically extended structure subsample with a rotation angle α within the range of -90° to 0° can be set to achieve training across the entire range of rotation angle α and ellipticity, thereby accurately constructing the first descriptive model.

[0139] In the second vertically extended structural subsample, each sample group has a different rotation angle α, and the ellipticity varies with the rotation angle α. For example, in the first sample group, the rotation angle α varies within the range of 0° to 30°, and the ellipticity varies with the rotation angle α. Accordingly, multiple sample groups within the range of -90° to 90° can be selected to achieve training across the full range of rotation angles and ellipticity, thereby accurately constructing the first descriptive model.

[0140] In the first vertical extension structure sample, the rotation angle α is the angle between the actual major axis of the cross section and the preset direction, and the ellipticity is the ratio of the size of the actual major axis to the size of the actual minor axis of the cross section of the first vertical extension structure sample at the preset position.

[0141] In this embodiment, first vertical extension structure samples at different preset positions can also be provided in the manner described above, so as to facilitate the construction of the first description model.

[0142] In this embodiment, to construct a non-fixed rotation angle model, first vertical extension structure samples can be provided in different ways. Specifically, different first vertical extension structure samples can be provided, with rotation angle α varying within the range of -90° to 90°, and ellipticity varying with or not varying with rotation angle α depending on the application scenario. This allows the first descriptive model to more accurately represent the true morphological features of the vertical extension structure 1. The number of first and second vertical extension structure sub-samples is not limited and can be set according to requirements.

[0143] According to requirements, first vertical extension structure sub-samples located at different preset positions can be selected as the first vertical extension structure samples. Three sets of first vertical extension structure sub-samples with different rotation angles α at preset positions are used as the first vertical extension structure samples, with the preset positions being the top, bottom, and middle of the first vertical extension structure sample, respectively.

[0144] For example, such as Figures 13a-13i As shown, Figures 13a-13c , Figures 13d-13f or Figure 13g-Figure 13i The given example can serve as a sample of the first vertically extended structure. Among them, Figures 13a-13c As a group, the cross-sections of the first sub-samplings all have the same ellipticity, which is a large ellipticity. Figure 13a , Figure 13b , Figure 13c The rotation angles α are the small rotation angle, the medium rotation angle, and the large rotation angle, respectively. Figures 13d-13f As a group, the cross-sections of the first sub-sampling samples all have the same ellipticity, which is the medium ellipticity. Figure 13d , Figure 13e , Figure 13f The rotation angles α are the small rotation angle, the medium rotation angle, and the large rotation angle, respectively. Figure 13g-Figure 13i As a group, the cross-sections of the first sub-samplings all have the same ellipticity, which is a small ellipticity. Figure 13g , Figure 13h , Figure 13i The rotation angles α are the small rotation angle, the medium rotation angle, and the large rotation angle, respectively.

[0145] In this embodiment, large ellipticity, medium ellipticity, and small ellipticity are defined according to the numerical value of the ellipticity, in descending order of value. The numerical value of the ellipticity varies depending on the vertical extension structure 1 in the semiconductor structure on the wafer. Small rotation angle, medium rotation angle, and large rotation angle are defined according to the magnitude of the rotation angle α, in descending order of rotation angle α. Taking a rotation angle α ranging from 0° to 90° as an example, the large rotation angle, medium rotation angle, and small rotation angle can be 60°<α≤90°, 30°<α≤60°, and 0°≤α≤30°, respectively.

[0146] Figure 13a , Figure 13e , Figure 13i As a group, their rotation angle α and ellipticity ranges are different. For example... Figure 13b , Figure 13d , Figure 13i As a group, their rotation angle α and ellipticity ranges are different. For example... Figure 13c , Figure 13e , Figure 13g As a group, their rotation angle α and ellipticity ranges are different.

[0147] In one exemplary embodiment, such as Figure 14 As shown, when the description model includes a second description model, i.e., a fixed-angle description model, different semiconductor structure samples are provided. Each different semiconductor structure sample has a different vertical extension structure sample. The description parameter samples of the vertical extension structure samples are obtained, including: S110-21. Provide a second vertically extended structure sample with different ellipticities at a preset position; in the second vertically extended structure sample, a first axis with an angle of a preset angle or within a preset range to the preset direction is used as the major axis of the cross section, and a second axis perpendicular to the first axis in the plane of the cross section is used as the minor axis of the cross section; the angle between the first axis and the preset direction is used as the rotation angle; the ellipticity is the ratio of the size of the first axis to the size of the second axis; the preset direction is determined according to a reference position, which is a preset reference position of the wafer where the semiconductor structure sample is located.

[0148] In steps S110-21, to construct a fixed-angle description model, the rotation angle α in the second vertical extension structure sample is a fixed angle, i.e., a preset angle, or varies slightly within a preset range. Each second vertical extension structure sample has a different ellipticity. The second vertical extension structure sample can provide multiple cross-sections at preset positions, each with a different ellipticity, to construct the second description model, thereby improving the accuracy of the second description model in describing the morphological features of the vertical extension structure 1. Here, the first axis is the major axis of the defined cross-section, and the second axis is the minor axis of the defined cross-section. In different second vertical extension structure samples, the directions and dimensions of the actual major and minor axes vary. In the second description model, the major axis of the cross-section is the first axis, which forms a preset angle with the preset direction or is within a preset range. The minor axis of the cross-section is the second axis perpendicular to the first axis in the plane containing the cross-section. Therefore, the actual major axis and the first axis may or may not be the same axis; the actual minor axis and the second axis may or may not be the same axis.

[0149] For example, such as Figures 15a-15f As shown, in Figures 15a-15f In the given example, the preset direction is along the X-axis in the diagram, and the rotation angle α is 0°; where red dashed lines c1 and c2 represent the actual major and minor axes of the cross-section, respectively; black dashed lines d1 and d2 represent the first and second axes, respectively. Figure 15a and Figure 15b In the diagram, the actual major axis is coaxial with the first axis and has the same dimensions, and the actual minor axis is coaxial with the second axis and has the same dimensions. Figure 15a The first axis in Figure 15b The dimensions of the first axis in the middle are different. Figure 15a The second axis in Figure 15b The dimensions of the second axis are the same, therefore Figure 15a and Figure 15b The cross-sectional ellipticity is different. Figure 15c In the middle, the actual major axis is not the same as the first axis, and the actual minor axis is not the same as the second axis. Figure 15d In this case, the actual major axis is not on the same axis as the first axis, the actual minor axis is not on the same axis as the second axis, and the length of the first axis is less than the length of the second axis. Figure 15e and Figure 15f In the middle, the actual major axis is not the same as the first axis, and the actual minor axis is not the same as the second axis; Figure 15e The first axis in Figure 15f The dimensions of the first axis in the middle are the same. Figure 15e The second axis in Figure 15f The dimensions of the second axis are different, therefore Figure 15e and Figure 15fThe ellipticity of the cross sections varies. Therefore, multiple sets of samples can be selected for training with a fixed rotation angle α and varying ellipticity to accurately construct a second descriptive model.

[0150] In this embodiment, second vertical extension structure samples at different preset positions can also be provided in the manner described above, so as to facilitate the construction of a second description model.

[0151] S110-22. Determine the description parameter sample based on the second vertical extension structure sample.

[0152] In steps S110-22, the descriptive parameters of the second vertical extension structure sample can be measured by transmission electron microscopy.

[0153] In one exemplary embodiment, a second vertically extending structure sample with a different ellipticity at a preset position is provided in the following manner: Provide at least three sets of second vertical extension structure samples with different ellipticities at preset positions, each set having a different range of ellipticity.

[0154] According to requirements, first vertical extension structure sub-samples located at different preset positions can be selected as the first vertical extension structure samples. Three sets of first vertical extension structure sub-samples with different rotation angles α at preset positions are used as the first vertical extension structure samples, with the preset positions being the top, bottom, and middle of the first vertical extension structure sample, respectively.

[0155] For example, such as Figures 16a-16c As shown, Figures 16a-16c As a group, its rotation angle α remains constant, while the range of ellipticity varies. In this model, if the first axis is greater than the second axis, it indicates that the rotation angle α is close to the model's set value; otherwise, it indicates a significant deviation.

[0156] In one exemplary embodiment, such as Figure 17 As shown, the measurement method also includes: S110-31. Different semiconductor structure samples are provided by a preset repeating unit. Each preset repeating unit includes a preset number of initial semiconductor structure samples. The initial semiconductor structure samples have initial vertical extension structure samples.

[0157] In steps S110-31, repeating units are established to adapt to the optical scattering measurement (OCD) method. The preset repeating units can be set according to the arrangement of the vertically extending structure 1 in the semiconductor structure, and each preset repeating unit includes a preset number of initial semiconductor structure samples. For example, a preset repeating unit includes 4-8 initial semiconductor structure samples.

[0158] S110-32. Based on the initial description parameter sample of the initial vertical extension structure sample, determine the description parameter sample of the vertical extension structure sample.

[0159] In steps S110-32, the initial description parameter sample contains the same parameters as the description parameter sample, which will not be repeated here.

[0160] In one exemplary embodiment, determining the description parameter sample of the vertically extended structure sample based on the initial description parameter sample of the initial vertically extended structure sample includes: The average value of the initial description parameter samples of the initial vertical extension structure sample is used as the description parameter sample of the vertical extension structure sample.

[0161] In this embodiment, the average value of the initial descriptive parameter sample of the initial opening sample is used as the descriptive parameter sample of the vertical extension structure sample, thereby improving measurement efficiency while ensuring measurement accuracy.

[0162] An exemplary embodiment of this disclosure provides a measuring device for a semiconductor structure, the semiconductor structure including a vertically extending structure 1, such as... Figure 18 As shown, the semiconductor structure measurement device includes a first determining module 501, an acquisition module 502, and a second determining module 503. The first determining module 501 is configured to determine a description model, the type of which is determined according to the type of the vertical extension structure 1. The description model is used to describe the mapping relationship between spectral information and description parameters. The acquisition module 502 is configured to incident light within a preset wavelength band onto the vertical extension structure 1 at a preset incident angle to obtain the actual spectral information corresponding to the vertical extension structure 1. The second determining module 503 is configured to determine the actual description parameters of the vertical extension structure 1 based on the actual spectral information and the description model. The actual description parameters are description parameters defined with the cross-section corresponding to a preset position of the vertical extension structure 1 as a preset shape. The preset position includes the position of the top surface 11, the bottom surface 12, and at least one preset depth of the vertical extension structure 1.

[0163] In one exemplary embodiment, the preset shape is elliptical.

[0164] In one exemplary embodiment, the description parameters include one or more of the following: The depth H of the vertically extending structure 1; The dimension of the major axis d1 of the cross section; The dimension of the minor axis d2 of the cross section; The area of ​​the cross section; The ellipticity of a cross section is the ratio of the size of the major axis d1 to the size of the minor axis d2 of the cross section. The angle between the cross section and the extension direction of the depth H of the vertically extending structure 1; The rotation angle α of the cross section is the rotation angle α of the major axis d1 of the cross section relative to the preset direction.

[0165] In one exemplary embodiment, the description model includes a first description model or a second description model, wherein, The first descriptive model is a non-fixed rotation angle model. In the first descriptive model, the ellipticity changes when the rotation angle α changes, or the ellipticity remains unchanged when the rotation angle α changes. The rotation angle α is the rotation angle α of the actual major axis of the cross section relative to the preset direction, and the ellipticity is the ratio of the size of the actual major axis of the cross section to the size of the actual minor axis. The second descriptive model is a fixed rotation angle model. In the second descriptive model, the rotation angle α is a preset angle or varies within a preset range. When the major axis d1 of the cross section changes, the ellipticity of the cross section changes accordingly. The major axis d1 of the cross section is a first axis that forms a preset angle with a preset direction or is within a preset range. The minor axis d2 of the cross section is a second axis that is perpendicular to the first axis in the plane where the cross section is located. The ellipticity is the ratio of the size of the first axis to the size of the second axis.

[0166] In one exemplary embodiment, the preset depth corresponds to the connection position of any two adjacent film layers of the semiconductor structure; and / or the preset depth corresponds to the position where the structural tilt angle of the semiconductor structure changes.

[0167] In one exemplary embodiment, the describing parameters further include: the top dimension of the lower membrane layer and the bottom dimension of the upper membrane layer at the connection position in any two adjacent membrane layers; and / or The relationship between the top dimension of the lower membrane layer and the bottom dimension of the upper membrane layer at the connection point in any two adjacent membrane layers; and / or The size of the film layer at the location where the structural tilt angle of the semiconductor structure changes.

[0168] In one exemplary embodiment, the first determining module 501 is configured to: Based on the type of vertical extension structure, different semiconductor structure samples are provided. Each different semiconductor structure sample has a different vertical extension structure sample, and a sample of descriptive parameters for the vertical extension structure sample is obtained. Light within a preset wavelength band is incident onto the vertically extended structure sample at a preset incident angle to obtain the spectral information sample corresponding to the vertically extended structure sample. The description model is determined based on the description parameter samples and spectral information samples.

[0169] In an exemplary embodiment, when the description model includes a first description model, i.e., when the description model is a non-fixed-angle model, the first determining module 501 is configured to: Provides a first vertically extended structure sample with at least different cross-sections at a preset position; the rotation angle is the rotation angle of the actual major axis of the cross-section of the first vertically extended structure sample at the preset position relative to a preset direction; the preset direction is determined according to a reference position, which is a preset reference position of the wafer where the semiconductor structure sample is located; when the rotation angle changes, the ellipticity changes accordingly or when the rotation angle changes, the ellipticity remains unchanged; Based on the first vertical extension structure sample, determine the description parameter sample.

[0170] In an exemplary embodiment, the first determining module 501 is further configured to provide a first vertically extending structure sample in at least one of the following ways: Provide at least two sets of first vertical extension structure sub-samples with different rotation angles at preset positions as first vertical extension structure samples, with each set having a different range of rotation angles; At least two sets of second vertical extension structure sub-samples with different rotation angles and different ellipticities at preset positions are provided as first vertical extension structure samples. The range of rotation angles and the range of ellipticities of each set are different. The ellipticity is the ratio of the actual major axis to the actual minor axis of the cross section of the first vertical extension structure sample at the preset position. In the second vertical extension structure sub-samples, the ellipticity is also different at different rotation angles.

[0171] In an exemplary embodiment, when the description model includes a second description model, i.e., a constant-helix angle description model, the first determining module 501 is configured to: Provides a second vertically extended structure sample with different ellipticities at a preset position; in the second vertically extended structure sample, a first axis with an angle of a preset angle or within a preset range to a preset direction is used as the major axis of the cross section, and a second axis perpendicular to the first axis in the plane of the cross section is used as the minor axis of the cross section; the angle between the first axis and the preset direction is used as the rotation angle; the ellipticity is the ratio of the size of the first axis to the size of the second axis; the preset direction is determined according to a reference position, which is a preset reference position of the wafer where the semiconductor structure sample is located; Based on the second vertical extension structure sample, determine the description parameter sample.

[0172] In an exemplary embodiment, the first determining module 501 is further configured to provide a second vertically extending structure sample with a different ellipticity at a preset position in the following manner: Provide at least three sets of second vertical extension structure samples with different ellipticities at preset positions, each set having a different range of ellipticity.

[0173] In an exemplary embodiment, the semiconductor structure measurement device further includes an acquisition module 504 and a processing module 505. The acquisition module 504 is configured to provide different semiconductor structure samples in a preset repeating unit. Each preset repeating unit includes a preset number of initial semiconductor structure samples, and the initial semiconductor structure samples have initial vertical extension structure samples. The processing module 505 is configured to determine the description parameter samples of the vertical extension structure samples based on the initial description parameter samples of the initial vertical extension structure samples.

[0174] In one exemplary embodiment, the processing module 505 is further configured to: The average value of the initial description parameter samples of the initial vertical extension structure sample is used as the description parameter sample of the vertical extension structure sample.

[0175] The aforementioned measuring device can be integrated into an electronic device, which then performs the corresponding functions. Regarding the devices in the above embodiments, the specific methods by which each module performs its operations have been described in detail in the embodiments relating to the method, and will not be elaborated upon here.

[0176] An exemplary embodiment of this disclosure provides an electronic device including a processor and a memory for storing processor-executable instructions; wherein the processor is configured to perform a measurement method for a semiconductor structure as described in any of the above embodiments. The electronic device includes, for example, a mobile phone, a laptop computer, a tablet computer, and a wearable device.

[0177] Figure 19 This is a block diagram illustrating a semiconductor structure measurement apparatus, namely a computer device 1200, according to an exemplary embodiment. For example, the computer device 1200 can be provided as a terminal device. (Refer to...) Figure 19 The computer device 1200 includes a processor 1201, the number of which can be set to one or more as needed. The computer device 1200 also includes a memory 1202 for storing instructions executable by the processor 1201, such as application programs. The number of memories can be set to one or more as needed. The stored application programs can be one or more. The processor 1201 is configured to execute instructions to perform the methods described above.

[0178] Those skilled in the art will understand that embodiments of this disclosure can be provided as methods, apparatus (devices), or computer program products. Therefore, this disclosure can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this disclosure can take the form of a computer program product implemented on one or more computer-usable storage media containing computer-usable program code. Computer storage media include volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data), including but not limited to RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and is accessible by a computer. Furthermore, it is known to those skilled in the art that communication media typically contain computer-readable instructions, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and can include any information delivery medium.

[0179] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is provided, such as a memory 1202 including instructions, which can be executed by a processor 1201 of a computer device 1200 to perform the above-described method. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0180] An exemplary embodiment of this disclosure provides a non-transitory computer-readable storage medium that, when instructions in the storage medium are executed by a processor of an electronic device, enables the electronic device to perform a measurement method for a semiconductor structure as described in any of the above embodiments.

[0181] This disclosure is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (devices), and computer program products according to embodiments of this disclosure. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions.

[0182] A computer program product includes computer instructions stored in a computer-readable storage medium; a processor of an electronic device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the electronic device to perform a semiconductor structure measurement method provided according to an exemplary embodiment of the present disclosure.

[0183] These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing device to produce a machine, such that the instructions, which are executable by the processor of the computer or other programmable data processing device, produce instructions for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0184] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0185] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0186] In this disclosure, the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or device. Without further limitation, an element defined by the phrase “comprising…” does not exclude the presence of additional identical elements in the article or device that includes said element.

[0187] Although preferred embodiments of the present disclosure have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this disclosure.

[0188] Obviously, those skilled in the art can make various modifications and variations to this disclosure without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims of this disclosure and their equivalents, the intent of this disclosure also includes these modifications and variations.

Claims

1. A method for measuring semiconductor structures, characterized in that, The semiconductor structure includes a vertically extending structure, and the measurement method includes: A description model is determined, the type of which is determined based on the type of the vertical extension structure. The description model is used to describe the mapping relationship between spectral information and description parameters. Light within a preset wavelength band is incident onto the vertical extension structure at a preset incident angle to obtain the actual spectral information corresponding to the vertical extension structure. Based on the actual spectral information and the description model, the actual description parameters of the vertical extension structure are determined. The actual description parameters are description parameters defined with the cross-section corresponding to the preset position of the vertical extension structure as the preset shape. The preset position includes the position of the top surface, the bottom surface and at least one preset depth of the vertical extension structure.

2. The method for measuring semiconductor structures according to claim 1, characterized in that, The preset shape is elliptical.

3. The method for measuring semiconductor structures according to claim 2, characterized in that, The description parameters include one or more of the following: The depth of the vertically extending structure; The dimension of the major axis of the cross section; The dimensions of the minor axis of the cross section; The area of ​​the cross section; The ellipticity of the cross section is the ratio of the length of the major axis to the length of the minor axis of the cross section. The angle between the cross section and the direction of extension of the depth of the vertically extending structure; The rotation angle of the cross section is the rotation angle of the major axis of the cross section relative to a preset direction.

4. The method for measuring semiconductor structures according to claim 3, characterized in that, The description model includes a first description model or a second description model, wherein, The first description model is a non-fixed rotation angle model. In the first description model, when the rotation angle changes, the ellipticity changes accordingly, or when the rotation angle changes, the ellipticity remains unchanged. The rotation angle is the rotation angle of the actual major axis of the cross section relative to the preset direction, and the ellipticity is the ratio of the size of the actual major axis of the cross section to the size of the actual minor axis. The second descriptive model is a fixed rotation angle model. In the second descriptive model, the rotation angle is the preset angle or the rotation angle varies within a preset range. When the major axis of the cross section changes, the ellipticity of the cross section changes accordingly. The major axis of the cross section is a first axis that forms a preset angle with the preset direction or is within a preset range. The minor axis of the cross section is a second axis that is perpendicular to the first axis in the plane where the cross section is located. The ellipticity is the ratio of the size of the first axis to the size of the second axis.

5. The method for measuring semiconductor structures according to claim 3, characterized in that, The preset depth corresponds to the connection position of any two adjacent film layers in the semiconductor structure; and / or The preset depth corresponds to the location where the structural tilt angle of the semiconductor structure changes.

6. The method for measuring semiconductor structures according to claim 5, characterized in that, The description parameters also include: In any two adjacent membrane layers, the top dimension of the lower membrane layer at the connection position and the bottom dimension of the upper membrane layer at the connection position; and / or The relationship between the top dimension of the lower membrane layer and the bottom dimension of the upper membrane layer at the connection position in any two adjacent membrane layers; and / or The size of the film layer at the location where the structural tilt angle of the semiconductor structure changes.

7. The method for measuring semiconductor structures according to claim 4, characterized in that, The defined description model includes: Based on the type of the vertical extension structure, different semiconductor structure samples are provided, and each of the different semiconductor structure samples has a different vertical extension structure sample, thereby obtaining a description parameter sample of the vertical extension structure sample; Light within the preset wavelength band is incident on the vertically extended structure sample at the preset incident angle to obtain the spectral information sample corresponding to the vertically extended structure sample; The description model is determined based on the description parameter sample and the spectral information sample.

8. The method for measuring semiconductor structures according to claim 7, characterized in that, When the description model includes the first description model, the provision of different semiconductor structure samples, each of which has a different vertical extension structure sample, and the acquisition of description parameter samples for the vertical extension structure samples, including: A first vertically extended structure sample with at least a different cross-section at the preset position is provided; the rotation angle is the rotation angle of the actual major axis of the cross-section of the first vertically extended structure sample at the preset position relative to the preset direction; the preset direction is determined according to a reference position, the reference position being a preset reference position of the wafer where the semiconductor structure sample is located; when the rotation angle changes, the ellipticity changes accordingly, or when the rotation angle changes, the ellipticity remains unchanged; The description parameter sample is determined based on the first vertical extension structure sample.

9. The method for measuring semiconductor structures according to claim 8, characterized in that, The first vertical extension structure sample is provided in at least one of the following manner: At least two sets of first vertical extension structure sub-samples with different rotation angles at the preset positions are provided as the first vertical extension structure samples, and the range of rotation angles of each set is different; At least two sets of second vertical extension structure sub-samples with different rotation angles and different ellipticities at the preset positions are provided as the first vertical extension structure sample, with each set having a different range of rotation angles and a different range of ellipticities. The ellipticity is the ratio of the actual major axis to the actual minor axis of the cross section of the first vertically extended structural sample at the preset position. In the second vertically extended structure sub-sample, the ellipticity is different at different rotation angles.

10. The method for measuring semiconductor structures according to claim 7, characterized in that, When the description model includes the second description model, the provision of different semiconductor structure samples, each of which has a different vertical extension structure sample, and the acquisition of description parameter samples for the vertical extension structure samples, including: A second vertically extended structure sample with a different ellipticity at the preset position is provided; in the second vertically extended structure sample, a first axis that forms a preset angle with the preset direction or is within a preset range is used as the major axis of the cross section, and a second axis that is perpendicular to the first axis in the plane of the cross section is used as the minor axis of the cross section; the angle between the first axis and the preset direction is used as the rotation angle; the ellipticity is the ratio of the size of the first axis to the size of the second axis; the preset direction is determined according to a reference position, and the reference position is a preset reference position of the wafer where the semiconductor structure sample is located; The description parameter sample is determined based on the second vertical extension structure sample.

11. The method for measuring semiconductor structures according to claim 10, characterized in that, A second vertically extending structure sample with a different ellipticity at the preset position is provided in the following manner: Provide at least three sets of second vertically extended structure samples with different ellipticities at the preset positions, each set having a different range of ellipticity.

12. The method for measuring semiconductor structures according to claim 7, characterized in that, The measurement method further includes: Different semiconductor structure samples are provided using a preset repeating unit. Each preset repeating unit includes a preset number of initial semiconductor structure samples, and the initial semiconductor structure samples have initial vertically extending structure samples. Based on the initial description parameter sample of the initial vertical extension structure sample, the description parameter sample of the vertical extension structure sample is determined.

13. The method for measuring semiconductor structures according to claim 12, characterized in that, The process of determining the description parameter sample of the vertically extended structure sample based on the initial description parameter sample of the initial vertically extended structure sample includes: The average value of the initial description parameter samples of the initial vertical extension structure sample is used as the description parameter sample of the vertical extension structure sample.

14. A measuring device for semiconductor structures, characterized in that, The semiconductor structure includes a vertically extending structure, and the measuring device for the semiconductor structure includes: The first determining module is configured to determine a description model, the type of which is determined according to the type of the vertical extension structure, and the description model is used to describe the mapping relationship between spectral information and description parameters; The acquisition module is configured to incident light within a preset wavelength band onto the vertical extension structure at a preset incident angle in order to acquire the actual spectral information corresponding to the vertical extension structure. The second determining module is configured to determine the actual description parameters of the vertical extension structure based on the actual spectral information and the description model. The actual description parameters are description parameters defined with the cross-section corresponding to the preset position of the vertical extension structure as the preset shape. The preset position includes the position of the top surface, the bottom surface, and at least one preset depth of the vertical extension structure.

15. An electronic device, characterized in that, include: processor; Memory used to store processor-executable instructions; The processor is configured to perform a measurement method for a semiconductor structure as described in any one of claims 1-13.

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