Semiconductor device

Abstract

The semiconductor device includes: a first lead having a first pad portion; a first semiconductor element disposed on one side of the first pad portion in the thickness direction; a second lead having a second pad portion disposed at a distance from the first pad portion in a first direction; a second semiconductor element disposed on one side of the second pad portion in the thickness direction; a first bonding wire bonded to the first semiconductor element; a second bonding wire bonded to the second semiconductor element; and a sealing resin. Viewed from the first direction, the first semiconductor element and the second semiconductor element overlap. The first semiconductor element is disposed biased against either side in a second direction, and the second semiconductor element is disposed biased against the aforementioned side in the second direction.

Description

Technical Field

[0001] This invention relates to semiconductor devices. Background Technology

[0002] Various structures have been proposed for semiconductor devices having semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes multiple leads, semiconductor elements, multiple wires, and a sealing resin. The semiconductor elements are mounted on bare die pads of the leads. The wires are electrically connected to the semiconductor elements and leads. The sealing resin covers the semiconductor elements and a portion of the multiple wires and leads. During the formation of the sealing resin, fluidized resin is allowed to flow into the cavity of a mold for filling, and the resin is then cured. For example, in a structure where multiple semiconductor elements are arranged on the leads, the arrangement of these semiconductor elements can sometimes adversely affect the flow of resin around the semiconductor elements. If the resin flow deteriorates, the adhesion between the leads and the resin decreases, and the sealing resin may peel off internally.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent document 1: Japanese Patent Application Publication No. 2019-121745. Summary of the Invention

[0006] One of the problems of this invention is to provide a semiconductor device that is an improvement over the prior art. This invention was made based on the above-described situation, and one of its problems is to provide a semiconductor device suitable for preventing internal delamination of the sealing resin.

[0007] The semiconductor device provided by the present invention includes: a first lead having a first pad portion; a first semiconductor element disposed on one side of the first pad portion in the thickness direction; a second lead having a second pad portion disposed at a distance from the first pad portion on one side in a first direction orthogonal to the thickness direction; a second semiconductor element disposed on the same side of the second pad portion in the thickness direction; a first bonding wire bonded to the first semiconductor element; a second bonding wire bonded to the second semiconductor element; and a sealing resin covering the first semiconductor element, the second semiconductor element, the first pad portion, the second pad portion, the first bonding wire, and the second bonding wire. Viewed in the first direction, the first semiconductor element and the second semiconductor element overlap. The first semiconductor element is disposed in the first pad portion offset to any one side in a second direction orthogonal to both the thickness direction and the first direction. The second semiconductor element is disposed in the second pad portion offset to the same side in the second direction.

[0008] Other features and advantages of the invention will become more apparent from the detailed description that follows with reference to the accompanying drawings. Attached Figure Description

[0009] Figure 1 This is a perspective view of a semiconductor device according to the first embodiment of the present invention.

[0010] Figure 2 This is a perspective view of a semiconductor device according to the first embodiment of the present invention.

[0011] Figure 3 This is a perspective view showing the main parts of a semiconductor device according to the first embodiment of the present invention.

[0012] Figure 4 This is a perspective view showing the main parts of a semiconductor device according to the first embodiment of the present invention.

[0013] Figure 5 This is a top view showing the semiconductor device according to the first embodiment of the present invention.

[0014] Figure 6 This is a bottom view showing the semiconductor device according to the first embodiment of the present invention.

[0015] Figure 7 This is a front view of a semiconductor device according to the first embodiment of the present invention.

[0016] Figure 8 This is a side view showing a semiconductor device according to a first embodiment of the present invention.

[0017] Figure 9 This is a top view showing the main parts of a semiconductor device according to the first embodiment of the present invention.

[0018] Figure 10 This is a bottom view showing the main parts of a semiconductor device according to the first embodiment of the present invention.

[0019] Figure 11 It is along Figure 10 A cross-sectional view along line XI-XI.

[0020] Figure 12 It is along Figure 10 A sectional view of line XII-XII.

[0021] Figure 13 It is along Figure 10 A cross-sectional view of line XIII-XIII.

[0022] Figure 14 This is a bottom view of the main parts of a semiconductor device representing a first modified example of the first embodiment of the present invention.

[0023] Figure 15 This is a bottom view of the main parts of a semiconductor device representing a second variation of the first embodiment of the present invention.

[0024] Figure 16 This is a bottom view of the main parts of a semiconductor device according to a third variation of the first embodiment of the present invention.

[0025] Figure 17 This is a bottom view showing the main parts of the semiconductor device according to the second embodiment of the present invention.

[0026] Figure 18 It is along Figure 17 A cross-sectional view of the XVIII-XVIII line.

[0027] Figure 19 This is a bottom view of the main parts of a semiconductor device representing a first modified example of the second embodiment of the present invention.

[0028] Figure 20 This is a bottom view of the main parts of a semiconductor device representing a second variation of the second embodiment of the present invention.

[0029] Figure 21 This is a bottom view of the main parts of a semiconductor device according to a third variation of the second embodiment of the present invention. Detailed Implementation

[0030] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0031] The terms "first," "second," and "third" used in this invention are used only as labels and are not necessarily intended to assign an order to these objects.

[0032] In this invention, unless otherwise specified, "something A is formed on something B" and "something A is formed on something B" include "something A is directly formed on something B" and "other objects exist between something A and something B, and something A is formed on something B". Similarly, unless otherwise specified, "something A is disposed on something B" and "something A is disposed on something B" include "something A is directly disposed on something B" and "other objects exist between something A and something B, and something A is disposed on something B". Likewise, unless otherwise specified, "something A is located on something B" includes "something A is in contact with something B, and something A is located on something B" and "other objects exist between something A and something B, and something A is located on something B". Furthermore, unless otherwise specified, "object A and object B overlap when viewed from a certain direction" includes both "object A and object B completely overlap" and "object A and object B partially overlap". Additionally, in this invention, "a surface A facing direction B (one side or the other side)" is not limited to the case where the angle between surface A and direction B is 90°, but includes the case where surface A is tilted relative to direction B.

[0033] First implementation method:

[0034] Figures 1-13 This describes a semiconductor device according to a first embodiment of the present invention. The semiconductor device A1 of this embodiment includes a first semiconductor element 11, a second semiconductor element 12, a first lead 2, a second lead 3, a third lead 4, a first bonding wire 5, a second bonding wire 6, and a sealing resin 8. The semiconductor device A1 also includes a conductive bonding layer 19.

[0035] Figure 1 and Figure 2 This is a 3D diagram representing semiconductor device A1. Figure 3 and Figure 4 This is a three-dimensional view showing the main parts of semiconductor device A1. Figure 3 and Figure 4 In the diagram, the shape of the sealing resin 8 is represented by an imaginary line (double-dotted line). Figure 5 This is a top view showing semiconductor device A1. Figure 6 This is a bottom view of semiconductor device A1. Figure 7 This is the front view of semiconductor device A1. Figure 8 This is a side view of semiconductor device A1. Figure 9 This is a top view showing the main part of semiconductor device A1. Figure 10 This is a bottom view showing the main part of semiconductor device A1. Figure 9 and Figure 10 In the diagram, the shape of the sealing resin 8 is represented by an imaginary line (double-dotted line). Figure 11 It is along Figure 10A cross-sectional view along line XI-XI. Figure 12 It is along Figure 10 A sectional view of line XII-XII. Figure 13 It is along Figure 10 A cross-sectional view of line XIII-XIII. Figure 14 yes Figure 11 A partially enlarged sectional view.

[0036] In these figures, the thickness direction of the present invention is referred to as the "thickness direction z". The direction orthogonal to the thickness direction z is referred to as the "first direction x". The direction orthogonal to both the thickness direction z and the first direction x is referred to as the "second direction y". Furthermore, one side of the thickness direction z corresponds to the "one side of the thickness direction" of the present invention and is called the "z1 side of the thickness direction z", and the other side of the thickness direction z corresponds to the "other side of the thickness direction" of the present invention and is called the "z2 side of the thickness direction z". One side of the first direction x corresponds to the "one side of the first direction" of the present invention and is called the "x1 side of the first direction x", and the other side of the first direction x corresponds to the "other side of the first direction" of the present invention and is called the "x2 side of the first direction x". One side of the second direction y corresponds to the "one side of the second direction" of the present invention and is called the "y1 side of the second direction y", and the other side of the second direction y corresponds to the "other side of the second direction" of the present invention and is called the "y2 side of the second direction y".

[0037] The first semiconductor element 11 and the second semiconductor element 12 are the elements that realize the electrical function of the semiconductor device A1. The types of the first semiconductor element 11 and the second semiconductor element 12 are not particularly limited. In this embodiment, the first semiconductor element 11 and the second semiconductor element 12 are diodes. In this embodiment, the first semiconductor element 11 and the second semiconductor element 12 are rectangular in shape when viewed in the thickness direction z.

[0038] like Figure 4 , Figure 10 , Figure 11 , Figure 13 As shown, the first semiconductor element 11 has a main surface electrode 111 and a back surface electrode 112. The main surface electrode 111 is disposed on the z1 side of the first semiconductor element 11 facing the thickness direction z. The back surface electrode 112 is disposed on the z2 side of the first semiconductor element 11 facing the thickness direction z. For example, the main surface electrode 111 is an anode electrode and the back surface electrode 112 is a cathode electrode.

[0039] like Figure 4 , Figures 10-12As shown, the second semiconductor element 12 has a main surface electrode 121 and a back surface electrode 122. The main surface electrode 121 is disposed on the z1 side of the second semiconductor element 12 facing the thickness direction z. The back surface electrode 122 is disposed on the z2 side of the second semiconductor element 12 facing the thickness direction z. For example, the main surface electrode 121 is an anode electrode and the back surface electrode 122 is a cathode electrode.

[0040] The first lead 2, the second lead 3, and the third lead 4 are formed, for example, by punching, bending, or performing other processes on a metal plate (lead frame). The first lead 2, the second lead 3, and the third lead 4 may contain, for example, Cu (copper) or Ni (nickel). In this embodiment, the constituent materials of each of the first lead 2, the second lead 3, and the third lead 4 contain Fe (iron) and Ni (nickel), for example, an alloy 42.

[0041] like Figures 1-13 As shown, the first lead 2 includes a first pad portion 21 and a first terminal portion 22.

[0042] The first pad portion 21 is the portion on which the first semiconductor element 11 is mounted. The first pad portion 21 has a first main surface 201 and a first back surface 202. The first main surface 201 is the surface facing the z1 side in the thickness direction z. The first back surface 202 is the surface facing the z2 side in the thickness direction z. A second bonding line 6 is connected to the first main surface 201 of the first pad portion 21. The first main surface 201 may, for example, be covered with a silver (Ag) plating layer. The first pad portion 21 has a generally long rectangular shape with the second direction y as its long side.

[0043] like Figure 4 , Figure 10 , Figure 11 , Figure 13 As shown, a first semiconductor element 11 is bonded to the first main surface 201 of the first pad portion 21 via a conductive bonding layer 19. In this embodiment, the conductive bonding layer 19 is made of a conductive material. The back electrode 112 of the first semiconductor element 11 faces the first main surface 201. The back electrode 112 and the first main surface 201 are electrically bonded via the conductive bonding layer 19. The first semiconductor element 11 is mounted on the first main surface 201 of the first pad portion 21 by bare die bonding. The specific structure of the conductive bonding layer 19 is not particularly limited, and it can be formed, for example, by firing a paste containing a metal such as silver (Ag). The conductive bonding layer 19 can also be an Au-Si eutectic alloy, solder (a metal containing tin and silver), etc., instead of firing a metal paste. The structure of the conductive bonding layer 19 used for bonding the second semiconductor element 12, etc., described later, is also the same as the conductive bonding layer 19 described above.

[0044] like Figure 4 , Figure 10 , Figure 13As shown, the first semiconductor element 11 is arranged in the first pad portion 21 biased against any one side in the second direction y. In the example illustrated in this embodiment, the first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side in the second direction y.

[0045] The first terminal portion 22 is connected to the y1 side in the second direction y relative to the first pad portion 21. When viewed in the thickness direction z, the first terminal portion 22 extends in the second direction y. Figures 1-13 As shown, the first terminal portion 22 protrudes from the sealing resin 8 and has a portion protruding from the sealing resin 8 towards the y1 side in the second direction y, a portion folded back towards the z1 side in the thickness direction z, and a portion located on the z1 side in the thickness direction z. The first terminal portion 22 is used as a terminal when mounting the semiconductor device A1. The first terminal portion 22 is in contact with the back electrode 112 of the first semiconductor element 11.

[0046] Alternatively, a plating layer, for example, made of an alloy with Sn (tin) as the main component, can be formed on the portion of the first lead 2 exposed from the sealing resin 8 (first terminal portion 22). In the illustrated example, a plating layer 203 is formed on the first terminal portion 22.

[0047] The second lead 3 is positioned relative to the first lead 2 on the x1 side of the first direction x. For example... Figures 2-7 , Figures 9-13 As shown, the second lead 3 includes a second pad portion 31 and a second terminal portion 32.

[0048] The second pad portion 31 is located at a position spaced apart from and adjacent to the first pad portion 21 in the first direction x on the x1 side. The second pad portion 31 is the portion on which the second semiconductor element 12 is mounted. The second pad portion 31 has a second main surface 301 and a second back surface 302. The second main surface 301 is the surface facing the z1 side in the thickness direction z. The second back surface 302 is the surface facing the z2 side in the thickness direction z. The second main surface 301 may, for example, be covered by a silver (Ag) plating layer. The second pad portion 31 has a generally elongated rectangular shape with the second direction y as its long side.

[0049] like Figure 4 , Figure 9 , Figure 10 As shown, the second pad portion 31 has a recess 312. The recess 312 is recessed inward from the end edge 311 in the first direction x of the second pad portion 31. In the illustrated example, the recess 312 is recessed from the end edge 311 on the x1 side of the first direction x of the second pad portion 31 towards the x2 side of the first direction x. The recess 312 is located on the y2 side of the second direction y in the second pad portion 31.

[0050] like Figure 4 , Figures 10-12As shown, a second semiconductor element 12 is bonded to the second main surface 301 of the second pad portion 31 via a conductive bonding layer 19. In this embodiment, the conductive bonding layer 19 is made of a conductive material. The back electrode 122 of the second semiconductor element 12 is opposite to the second main surface 301. The back electrode 122 and the second main surface 301 are electrically bonded via the conductive bonding layer 19. The second semiconductor element 12 is mounted on the second main surface 301 of the second pad portion 31 via bare die bonding.

[0051] like Figure 4 , Figure 10 As shown, the second semiconductor element 12 is disposed in the second pad portion 31 biased against one side in the second direction y. The second semiconductor element 12 is disposed in the second direction y on the same side as the first semiconductor element 11. In this embodiment, the second semiconductor element 12 is disposed in the second pad portion 31 biased against the y1 side in the second direction y. Furthermore, the second semiconductor element 12 is spaced apart from the aforementioned recess 312 in the second direction y.

[0052] The second semiconductor element 12 overlaps with the first semiconductor element 11 when viewed in the first direction x. In the illustrated example, the first semiconductor element 11 and the second semiconductor element 12 are the same size. Furthermore, when viewed in the first direction x, the second semiconductor element 12 completely overlaps with the first semiconductor element 11.

[0053] The second terminal portion 32 is connected to the y2 side of the second direction y relative to the second pad portion 31. When viewed in the thickness direction z, the second terminal portion 32 extends in the second direction y. Figures 2-7 , Figure 9 , Figure 10 , Figure 13 As shown, the second terminal portion 32 protrudes from the sealing resin 8 and has a portion protruding from the sealing resin 8 towards the y2 side in the second direction y, a portion folded back towards the z1 side in the thickness direction z, and a portion located on the z1 side in the thickness direction z. The second terminal portion 32 is used as a terminal when mounting the semiconductor device A1. The second terminal portion 32 is in contact with the back electrode 122 of the second semiconductor element 12.

[0054] The second terminal portion 32 is connected to the y2 side of the second direction y relative to the second pad portion 31. When viewed in the thickness direction z, the second terminal portion 32 extends in the second direction y. Figure 1 and Figures 3-10 As shown, the second terminal portion 32 protrudes from the sealing resin 8 and has a portion protruding from the sealing resin 8 towards the y2 side in the second direction y, a portion folded back towards the z1 side in the thickness direction z, and a portion located on the z1 side in the thickness direction z. The second terminal portion 32 is used as a terminal when mounting the semiconductor device A1.

[0055] Alternatively, a plating layer, for example, made of an alloy with Sn (tin) as the main component, can be formed on the portion of the second lead 3 exposed from the sealing resin 8 (second terminal portion 32). Although detailed illustrations are omitted, a plating layer is formed on the second terminal portion 32 in the same manner as on the first terminal portion 22 described above.

[0056] The third lead 4 is positioned relative to the first lead 2 on the x2 side of the first direction x. For example... Figures 1-12 As shown, the third lead 4 includes a third pad portion 41 and a third terminal portion 42.

[0057] The third pad portion 41 is located at a position spaced apart from and adjacent to the first pad portion 21 on the x2 side in the first direction x. The third pad portion 41 has a third main surface 401 and a third back surface 402. The third main surface 401 is the surface facing the z1 side in the thickness direction z. The third back surface 402 is the surface facing the z2 side in the thickness direction z. A first bonding line 5 is connected to the third main surface 401 of the third pad portion 41. The third main surface 401 may, for example, be covered by a silver (Ag) plating. The third pad portion 41 has a generally long rectangular shape with the second direction y as its long side.

[0058] like Figure 4 , Figure 9 , Figure 10 As shown, the third pad portion 41 has a recess 412. The recess 412 is recessed inward from the end edge 411 in the first direction x of the third pad portion 41. In the illustrated example, the recess 412 is recessed from the end edge 411 on the x2 side of the first direction x of the third pad portion 41 towards the x1 side of the first direction x. The recess 412 is located on the y2 side of the second direction y in the third pad portion 41.

[0059] The third terminal portion 42 is connected to the y2 side of the second direction y relative to the third pad portion 41. When viewed in the thickness direction z, the third terminal portion 42 extends in the second direction y. Figures 1-10 As shown, the third terminal portion 42 protrudes from the sealing resin 8 and has a portion protruding from the sealing resin 8 towards the y2 side in the second direction y, a portion folded back towards the z1 side in the thickness direction z, and a portion located on the z1 side in the thickness direction z. When viewed in the first direction x, the third terminal portion 42 has a shape and size that substantially overlaps with the second terminal portion 32. The third terminal portion 42 is used as a terminal when mounting the semiconductor device A1.

[0060] The portion of the third lead 4 exposed from the sealing resin 8 (third terminal portion 42) may, for example, be coated with an alloy primarily composed of Sn (tin). Although detailed illustrations are omitted, the third terminal portion 42 is coated in the same manner as the first terminal portion 22 described above.

[0061] The first bonding wire 5 is bonded to the main electrode 111 of the first semiconductor element 11 and the third pad portion 41 of the third lead 4. The material of the first bonding wire 5 is not limited, and may include metals such as Al (aluminum), Cu (copper), and Au (gold). Furthermore, the number of first bonding wires 5 is not limited, and multiple first bonding wires 5 may be included. In the illustrated example, the first bonding wire 5 includes Au (gold). The third terminal portion 42 of the third lead 4 is connected to the main electrode 111 of the first semiconductor element 11 via the first bonding wire 5.

[0062] The second bonding wire 6 is bonded to the main surface electrode 121 of the second semiconductor element 12 and the first pad portion 21 of the first lead 2. The material of the second bonding wire 6 is not limited, and may include metals such as Al (aluminum), Cu (copper), and Au (gold). In the illustrated example, the second bonding wire 6 contains Au (gold). The second bonding wire 6 is bonded to the first pad portion 21 at a position closer to the y2 side of the second direction y than the first semiconductor element 11. The first terminal portion 22 of the first lead 2 is connected to the main surface electrode 121 of the second semiconductor element 12 via the second bonding wire 6.

[0063] like Figures 1-13 As shown, the sealing resin 8 covers a portion of the first semiconductor element 11, the second semiconductor element 12, the first bonding wire 5 and the second bonding wire 6, and a portion of the first lead 2, the second lead 3, and the third lead 4. More specifically, the sealing resin 8 covers the first pad 21, the second pad 31, and the third pad 41 of the first lead 2, the second lead 3, and the third lead 4. The sealing resin 8 is electrically insulating. The sealing resin 8 is, for example, made of a material containing black epoxy resin. The shape of the sealing resin 8 is not limited. Figures 1-13 As shown, the sealing resin 8 of this embodiment has a resin main surface 81, a resin back surface 82, a first resin side surface 83, a second resin side surface 84, a third resin side surface 85, and a fourth resin side surface 86.

[0064] The resin main surface 81 is the surface facing the z1 side in the thickness direction z. The resin back surface 82 is the surface facing the z2 side in the thickness direction z. In the illustrated example, the resin main surface 81 and the resin back surface 82 are flat surfaces, but they are not limited to this; for example, they can also be curved or bent surfaces.

[0065] The first resin side surface 83 is the x2 side facing the first direction x. The second resin side surface 84 is the x1 side facing the first direction x. In the illustrated example, the first resin side surface 83 and the second resin side surface 84 are slightly curved surfaces, but they are not limited to this; for example, they can also be curved surfaces, flat surfaces, etc.

[0066] like Figure 1 , Figure 2 , Figure 8As shown, in this embodiment, a resin injection mark 831 is formed on the first resin side surface 83. The surface of the resin injection mark 831 is rougher than other areas of the first resin side surface 83 except for the resin injection mark 831. The resin injection mark 831 appears during the process of forming the sealing resin 8 in the manufacture of the semiconductor device A1 by cutting the sealing resin 8 through the resin injection gate. During the formation of the sealing resin 8, the fluidized resin injected from the resin injection gate flows into and fills the cavity of the mold in the x1 side of the first direction x. In the semiconductor device A1, the resin injection mark 831 is a long rectangular shape extending in the second direction y as its long side. The resin injection mark 831 is located on the z2 side of the thickness direction z. The position of the resin injection mark 831 in the thickness direction z is the same as the position of the first pad portion 21, the second pad portion 31, and the third pad portion 41 in the thickness direction z.

[0067] The third resin side surface 85 is the surface facing the y1 side of the second direction y. The fourth resin side surface 86 is the surface facing the y2 side of the second direction y. In the illustrated example, the third resin side surface 85 and the fourth resin side surface 86 are slightly curved surfaces, but are not limited to this; for example, they may also be curved surfaces or flat surfaces. In this embodiment, the first terminal portion 22 protrudes from the third resin side surface 85, and the second terminal portion 32 and the third terminal portion 42 protrude from the fourth resin side surface 86.

[0068] Next, the function of semiconductor device A1 will be explained.

[0069] In this embodiment, the first semiconductor element 11 and the second semiconductor element 12, respectively mounted on adjacent first pad portions 21 and second pad portions 31 in the first direction x, overlap each other when viewed in the first direction x. Furthermore, the first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). Based on this structure where the first semiconductor element 11 and the second semiconductor element 12 are arranged biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x around the first semiconductor element 11 and the second semiconductor element 12 during the formation of the sealing resin 8 is improved. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3) and the sealing resin 8 becomes good, preventing internal peeling of the sealing resin 8.

[0070] In semiconductor device A1, when viewed in the first direction x, the second semiconductor element 12 completely overlaps with the first semiconductor element 11. With this structure, during the formation of the sealing resin 8, the flow of the resin flowing from the x2 side to the x1 side of the first direction x around the first semiconductor element 11 and the second semiconductor element 12 becomes more efficient. Consequently, the adhesion between the first pad portion 21, the second pad portion 31 and the sealing resin 8 becomes better, and internal peeling of the sealing resin 8 can be more reliably prevented.

[0071] The second pad portion 31, on which the second semiconductor element 12 is mounted, has a recess 312. The recess 312 is recessed inward from the end edge 311 in the first direction x of the second pad portion 31. With this structure, the adhesion between the second pad portion 31 (second lead 3) and the sealing resin 8 is improved. This is more preferable in preventing internal peeling of the sealing resin 8.

[0072] Figures 14-21 These figures illustrate variations and other embodiments of the semiconductor device of the present invention. Furthermore, in these figures, elements that are the same as or similar to those in the above embodiments are labeled with the same reference numerals as those in the above embodiments, and repeated descriptions are omitted. Additionally, the structures of the various variations and components in each embodiment can be appropriately combined with each other without creating technical inconsistencies.

[0073] First variation of the first embodiment:

[0074] Figure 14 This represents a first variation of semiconductor device A1. Figure 14 This is a bottom view showing the main part of the semiconductor device A11 in the first modified example. Figure 14 In the diagram, the shape of the sealing resin 8 is represented by an imaginary line (double-dotted line). The shapes of the second pad portion 31 and the third pad portion 41 of the semiconductor device A11 are different from those of the semiconductor device A1.

[0075] In semiconductor device A11, no recess 312 is formed in the second pad portion 31, and no recess 412 is formed in the third pad portion 41. The arrangement of the first semiconductor element 11 in the first pad portion 21 and the arrangement of the second semiconductor element 12 in the second pad portion 31 are the same as those in the semiconductor device A1 of the above embodiment.

[0076] According to semiconductor device A11, a first semiconductor element 11 and a second semiconductor element 12, respectively mounted on a first pad portion 21 and a second pad portion 31 adjacent to each other in the first direction x, overlap when viewed in the first direction x. The first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). With this structure in which the first semiconductor element 11 and the second semiconductor element 12 are biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x is improved around the first semiconductor element 11 and the second semiconductor element 12 during the formation of the sealing resin 8. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3) and the sealing resin 8 becomes good, and internal peeling of the sealing resin 8 can be prevented. In addition, semiconductor device A11, within the same structural range as semiconductor device A1 in the above embodiment, performs the same function and effect as semiconductor device A1.

[0077] Second variation of the first embodiment:

[0078] Figure 15 This represents a second variation of semiconductor device A1. Figure 15 This is a bottom view showing the main part of the semiconductor device A12 in the second modified example. Figure 15 In the diagram, the outline of the sealing resin 8 is represented by an imaginary line (double-dotted line). The arrangement of the second semiconductor element 12 on the second pad portion 31 in semiconductor device A12 differs from that in semiconductor device A11 described above.

[0079] In semiconductor device A12, the second semiconductor element 12 is located on the y2 side of the second direction y compared to semiconductor device A11. In this modified example, when viewed in the first direction x, the second semiconductor element 12 does not completely overlap with the first semiconductor element 11, but only partially overlaps with it. When viewed in the first direction x, the proportion of the length L2 of the second direction y of the overlapping portion of the first semiconductor element 11 and the second semiconductor element 12 relative to the length L1 of the first semiconductor element 11 in the second direction y is 60% or more. Thus, when viewed in the first direction x, the second semiconductor element 12 overlaps with a large portion of the first semiconductor element 11.

[0080] According to semiconductor device A12, a first semiconductor element 11 and a second semiconductor element 12, respectively mounted on a first pad portion 21 and a second pad portion 31 adjacent to each other in the first direction x, overlap each other when viewed in the first direction x. The first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). According to this structure in which the first semiconductor element 11 and the second semiconductor element 12 are biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x is improved around the first semiconductor element 11 and the second semiconductor element 12 during the formation of the sealing resin 8. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3) and the sealing resin 8 becomes good, and internal peeling of the sealing resin 8 can be prevented. In addition, semiconductor device A12, within the same structural range as semiconductor device A1 in the above embodiment, performs the same function and effect as semiconductor device A1.

[0081] Third variation of the first embodiment:

[0082] Figure 16 This represents a third variation of semiconductor device A1. Figure 16 This is a bottom view showing the main part of the semiconductor device A13 in the third modified example. Figure 16 In the diagram, the shape of the sealing resin 8 is represented by an imaginary line (double-dotted line). The shapes of the second pad portion 31 and the third pad portion 41 in semiconductor device A13, as well as the arrangement of the first semiconductor element 11 and the second semiconductor element 12, are different from those in semiconductor device A1.

[0083] In semiconductor device A13, the recess 312 of the second pad portion 31 is located on the y1 side of the second pad portion 31 in the second pad portion 31. The recess 412 of the third pad portion 41 is located on the y1 side of the second direction y in the third pad portion 41. Furthermore, the first semiconductor element 11 is disposed in the first pad portion 21 biased towards the y2 side of the second direction y. The second semiconductor element 12 is disposed in the second direction y biased towards the same side as the first semiconductor element 11. That is, in this modified example, the second semiconductor element 12 is disposed in the second pad portion 31 biased towards the y2 side of the second direction y. When viewed in the first direction x, the second semiconductor element 12 completely overlaps with the first semiconductor element 11.

[0084] According to semiconductor device A13, a first semiconductor element 11 and a second semiconductor element 12, respectively mounted on a first pad portion 21 and a second pad portion 31 adjacent in the first direction x, overlap each other when viewed in the first direction x. The first semiconductor element 11 is arranged in the first pad portion 21 biased against the y2 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y2 side (the same side as the first semiconductor element 11 in the second direction y). With this structure, in which the first semiconductor element 11 and the second semiconductor element 12 are biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x around the first semiconductor element 11 and the second semiconductor element 12 during the formation of the sealing resin 8 is improved. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3) and the sealing resin 8 becomes good, and internal peeling of the sealing resin 8 can be prevented. In addition, semiconductor device A13, within the same structural range as semiconductor device A1 in the above embodiment, performs the same function and effect as semiconductor device A1.

[0085] Second implementation method:

[0086] Figure 17 and Figure 18 This refers to a semiconductor device according to a second embodiment of the present invention. Figure 17 This is a bottom view showing the main part of the semiconductor device A2 in this embodiment. Figure 18 It is along Figure 17 A cross-sectional view along line XVIII-XVIII. Figure 17 In the diagram, the shape of the sealing resin 8 is represented by an imaginary line (double-dotted line).

[0087] Semiconductor device A2 also includes a third semiconductor element 13. The third semiconductor element 13 is a diode. For example... Figure 17 , Figure 18 As shown, the third semiconductor element 13 has a main surface electrode 131 and a back surface electrode 132. The main surface electrode 131 is disposed on the z1 side of the third semiconductor element 13 facing the thickness direction z. The back surface electrode 132 is disposed on the z2 side of the third semiconductor element 13 facing the thickness direction z. For example, the main surface electrode 131 is an anode electrode, and the back surface electrode 132 is a cathode electrode. In semiconductor device A2, the main surface electrode 111 of the first semiconductor element 11 is a cathode electrode, and the back surface electrode 112 is an anode electrode. In addition, the main surface electrode 121 of the second semiconductor element 12 is an anode electrode, and the back surface electrode 122 is a cathode electrode.

[0088] like Figure 18As shown, a third semiconductor element 13 is bonded to the third main surface 401 of the third pad portion 41 via a conductive bonding layer 19. In this embodiment, the conductive bonding layer 19 is made of a conductive material. The back electrode 132 of the third semiconductor element 13 is opposite to the third main surface 401. The back electrode 132 and the third main surface 401 are electrically bonded via the conductive bonding layer 19. The third semiconductor element 13 is mounted on the third main surface 401 of the third pad portion 41 via bare die bonding.

[0089] like Figure 17 As shown, the third semiconductor element 13 is disposed in the third pad portion 41 biased against one side in the second direction y. The third semiconductor element 13 is disposed in the second direction y on the same side as the first semiconductor element 11 and the second semiconductor element 12. In this embodiment, the third semiconductor element 13 is disposed in the third pad portion 41 biased against the y1 side in the second direction y. Furthermore, the third semiconductor element 13 is spaced apart from the recess 412 in the second direction y.

[0090] When viewed in the first direction x, the third semiconductor element 13 overlaps with the first semiconductor element 11 and the second semiconductor element 12. In the illustrated example, the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13 are of the same size. Furthermore, when viewed in the first direction x, the third semiconductor element 13 completely overlaps with each of the first semiconductor element 11 and the second semiconductor element 12.

[0091] In this embodiment, the first bonding wire 5 is bonded to the main electrode 111 of the first semiconductor element 11 and the main electrode 131 of the third semiconductor element 13. The second bonding wire 6 is bonded to the main electrode 121 of the second semiconductor element 12 and the main electrode 111 of the first semiconductor element 11.

[0092] In this embodiment, the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13, respectively mounted on the first pad portion 21, the second pad portion 31, and the third pad portion 41 adjacent to each other in the first direction x, overlap when viewed in the first direction x. Furthermore, the first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). The third semiconductor element 13 is arranged in the third pad portion 41 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). According to the structure in which the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13 are arranged such that they are biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x is improved when the sealing resin 8 is formed. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3), the third pad portion 41 (third lead 4) and the sealing resin 8 becomes good, and internal peeling of the sealing resin 8 can be prevented.

[0093] In semiconductor device A2, when viewed in the first direction x, the third semiconductor element 13 completely overlaps with the first semiconductor element 11 and the second semiconductor element 12. With this structure, during the formation of the sealing resin 8, the flow of the resin flowing from the x2 side to the x1 side of the first direction x around the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13 becomes more efficient. Consequently, the adhesion between the first pad portion 21, the second pad portion 31, the third pad portion 41 and the sealing resin 8 becomes better, and internal peeling of the sealing resin 8 can be more reliably prevented.

[0094] The second pad portion 31, on which the second semiconductor element 12 is mounted, has a recess 312. The recess 312 is recessed inward from the end edge 311 in the first direction x of the second pad portion 31. The third pad portion 41, on which the third semiconductor element 13 is mounted, has a recess 412. The recess 412 is recessed inward from the end edge 411 in the first direction x of the third pad portion 41. With this structure, the adhesion between the second pad portion 31 (second lead 3) and the third pad portion 41 (third lead 4) and the sealing resin 8 is improved. This is more preferable in preventing internal peeling of the sealing resin 8.

[0095] First variation of the second embodiment:

[0096] Figure 19 This represents the first variation of semiconductor device A2. Figure 19 This is a bottom view showing the main part of the semiconductor device A21 in the first modified example. Figure 19 In the diagram, the shape of the sealing resin 8 is represented by an imaginary line (double-dotted line). In semiconductor device A21, the shapes of the second pad portion 31 and the third pad portion 41 are different from those of semiconductor device A2.

[0097] In semiconductor device A21, no recess 312 is formed in the second pad portion 31, and no recess 412 is formed in the third pad portion 41. The arrangement of the first semiconductor element 11 in the first pad portion 21, the arrangement of the second semiconductor element 12 in the second pad portion 31, and the arrangement of the third semiconductor element 13 in the third pad portion 41 are the same as those in semiconductor device A2 of the above embodiment.

[0098] According to semiconductor device A21, a first semiconductor element 11, a second semiconductor element 12, and a third semiconductor element 13, respectively mounted on a first pad portion 21, a second pad portion 31, and a third pad portion 41 adjacent in the first direction x, overlap when viewed in the first direction x. The first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). The third semiconductor element 13 is arranged in the third pad portion 41 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). According to the structure in which the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13 are arranged such that they are biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x is improved when the sealing resin 8 is formed. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3), the third pad portion 41 (third lead 4) and the sealing resin 8 becomes good, and internal peeling of the sealing resin 8 can be prevented. In addition, the semiconductor device A21, within the same structural range as the semiconductor device A2 in the above embodiment, performs the same function as the semiconductor device A2.

[0099] Second variation of the second embodiment:

[0100] Figure 20 This represents a second variation of semiconductor device A2. Figure 20 This is a bottom view showing the main part of the semiconductor device A22 in the second modified example. Figure 20 In the diagram, the outline of the sealing resin 8 is represented by an imaginary line (double-dotted line). The arrangement of the second semiconductor element 12 in the second pad portion 31 and the arrangement of the third semiconductor element 13 in the third pad portion 41 in semiconductor device A22 differ from those in semiconductor device A21 described above.

[0101] In semiconductor device A22, the second semiconductor element 12 and the third semiconductor element 13 are located on the y2 side of the second direction y compared to semiconductor device A21. In this modified example, the second semiconductor element 12 and the third semiconductor element 13, when viewed in the first direction x, do not completely overlap with the first semiconductor element 11, but only partially overlap with it. Figure 20 As shown, when viewed in the first direction x, the second semiconductor element 12 and the third semiconductor element 13 overlap with most of the first semiconductor element 11. Furthermore, when viewed in the first direction x, the third semiconductor element 13 completely overlaps with the second semiconductor element 12.

[0102] According to semiconductor device A22, a first semiconductor element 11, a second semiconductor element 12, and a third semiconductor element 13, respectively mounted on a first pad portion 21, a second pad portion 31, and a third pad portion 41 adjacent in the first direction x, overlap when viewed in the first direction x. The first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). The third semiconductor element 13 is arranged in the third pad portion 41 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). According to the structure in which the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13 are arranged such that they are biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x is improved when the sealing resin 8 is formed. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3), the third pad portion 41 (third lead 4) and the sealing resin 8 becomes good, and internal peeling of the sealing resin 8 can be prevented. In addition, the semiconductor device A22, within the same structural range as the semiconductor device A2 in the above embodiment, performs the same function as the semiconductor device A2.

[0103] A third variation of the second embodiment:

[0104] Figure 21This represents a third variation of semiconductor device A2. Figure 21 This is a bottom view showing the main part of the semiconductor device A23 in the third modified example. Figure 21 In the diagram, the shape of the sealing resin 8 is represented by an imaginary line (double-dotted line). The shapes of the second pad portion 31 and the third pad portion 41 of the semiconductor device A23, as well as the arrangement of the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13, are different from those of the semiconductor device A1.

[0105] In semiconductor device A23, the recess 312 of the second pad portion 31 is located near the y1 side in the second direction y. The recess 412 of the third pad portion 41 is located near the y1 side in the second direction y. Furthermore, the first semiconductor element 11 is disposed in the first pad portion 21 biased towards the y2 side in the second direction y. The second semiconductor element 12 is disposed in the second direction y biased towards the same side as the first semiconductor element 11. That is, in this modified example, the second semiconductor element 12 is disposed in the second pad portion 31 biased towards the y2 side in the second direction y. The third semiconductor element 13 is disposed in the second direction y biased towards the same side as the first semiconductor element 11. That is, the third semiconductor element 13 is disposed in the third pad portion 41 biased towards the y2 side in the second direction y. When viewed in the first direction x, the third semiconductor element 13 completely overlaps with both the first semiconductor element 11 and the second semiconductor element 12.

[0106] According to semiconductor device A23, a first semiconductor element 11, a second semiconductor element 12, and a third semiconductor element 13, respectively mounted on a first pad portion 21, a second pad portion 31, and a third pad portion 41 adjacent in the first direction x, overlap when viewed in the first direction x. The first semiconductor element 11 is arranged in the first pad portion 21 biased against the y1 side (one side of the second direction y). The second semiconductor element 12 is arranged in the second pad portion 31 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). The third semiconductor element 13 is arranged in the third pad portion 41 biased against the y1 side (the same side as the first semiconductor element 11 in the second direction y). According to the structure in which the first semiconductor element 11, the second semiconductor element 12, and the third semiconductor element 13 are arranged such that they are biased against the same side in the second direction y, the deterioration of the flowability of the resin flowing from the x2 side to the x1 side of the first direction x is improved when the sealing resin 8 is formed. As a result, the adhesion between the first pad portion 21 (first lead 2), the second pad portion 31 (second lead 3), the third pad portion 41 (third lead 4) and the sealing resin 8 becomes good, and internal peeling of the sealing resin 8 can be prevented. In addition, the semiconductor device A23, within the same structural range as the semiconductor device A2 of the above embodiment, performs the same function as the semiconductor device A2.

[0107] The semiconductor device of the present invention is not limited to the embodiments described above. The specific structure of each part of the semiconductor device of the present invention can be freely modified in various ways.

[0108] The present invention includes structures associated with the following notes.

[0109] Postscript 1.

[0110] A semiconductor device comprising:

[0111] A first lead having a first pad portion;

[0112] A first semiconductor element is disposed on one side of the first pad portion in the thickness direction;

[0113] The second lead has a second pad portion that is spaced apart from the first pad portion on one side of a first direction orthogonal to the thickness direction;

[0114] A second semiconductor element is disposed on one side of the second pad portion in the thickness direction;

[0115] A first bonding line that is bonded to the first semiconductor element;

[0116] The second bonding wire bonded to the second semiconductor element; and

[0117] A sealing resin covers the first semiconductor element, the second semiconductor element, the first pad portion, the second pad portion, the first bonding wire, and the second bonding wire.

[0118] Viewed in the first direction, the first semiconductor element overlaps with the second semiconductor element.

[0119] The first semiconductor element is configured to be offset on any one side of the first pad portion in a second direction orthogonal to the thickness direction and the first direction.

[0120] The second semiconductor element is configured such that it is biased against one side in the second direction within the second pad portion.

[0121] Postscript 2.

[0122] According to the semiconductor device described in Appendix 1, the length of the portion of the first semiconductor element and the second semiconductor element overlapping in the second direction when viewed in the first direction is 60% or more, relative to the length of the first semiconductor element in the second direction.

[0123] Postscript 3.

[0124] According to the semiconductor device described in Appendix 1, when viewed in the first direction, the second semiconductor element completely overlaps with the first semiconductor element.

[0125] Appendix 4.

[0126] According to any one of the appendices 1 to 3, the semiconductor device wherein the second bonding wire is electrically connected to the second semiconductor element and the first pad portion.

[0127] Postscript 5.

[0128] According to any one of the appendices 1 to 4, the semiconductor device wherein the second pad portion has a recess that is recessed inward from the end edge in the first direction toward the first direction.

[0129] The second semiconductor element is arranged at a distance from the recess in the second direction.

[0130] Postscript 6.

[0131] The semiconductor device according to any one of Appendices 1 to 5 further includes a third lead having a third pad portion disposed at a distance from the first pad portion on the other side of the first direction.

[0132] Postscript 7.

[0133] According to the semiconductor device described in Appendix 6, the first bonding wire is electrically connected to the first semiconductor element and the third pad portion.

[0134] Postscript 8.

[0135] According to the semiconductor device described in Appendix 7, the first semiconductor element and the second semiconductor element are diodes.

[0136] Postscript 9.

[0137] According to the semiconductor devices described in Appendix 6, among which,

[0138] It also includes a third semiconductor element disposed on one side of the thickness direction of the third pad portion.

[0139] Viewed in the first direction, the third semiconductor element overlaps with the first semiconductor element and the second semiconductor element.

[0140] Postscript 10.

[0141] According to Appendix 9, the semiconductor device wherein, when viewed in the first direction, the third semiconductor element completely overlaps with both the first semiconductor element and the second semiconductor element.

[0142] Postscript 11.

[0143] According to the semiconductor devices described in Appendix 9 or 10, wherein,

[0144] The first bonding wire is electrically connected to both the first semiconductor element and the third semiconductor element.

[0145] The second bonding wire is electrically connected to the second semiconductor element and the first semiconductor element.

[0146] Postscript 12.

[0147] According to any one of the semiconductor devices described in Appendix 6 to 11, wherein,

[0148] The first lead has a first terminal portion that is connected to one side of the first pad portion in the second direction and at least a portion of it is exposed from the sealing resin.

[0149] The second lead has a second terminal portion that is connected to the other side of the second pad portion in the second direction, and at least a portion of it is exposed from the sealing resin.

[0150] The third lead has a third terminal portion that is connected to the other side of the third pad portion in the second direction and at least a portion of it is exposed from the sealing resin.

[0151] Postscript 13.

[0152] According to the semiconductor devices described in Appendix 12, among which,

[0153] The first semiconductor element is configured such that it is biased against one side in the second direction within the first pad portion.

[0154] The second semiconductor element is configured such that it is biased against one side of the second direction in the second pad portion.

[0155] Postscript 14.

[0156] According to any one of the semiconductor devices described in Appendix 1 to 13, wherein,

[0157] The sealing resin has a first resin side facing the opposite side of the first direction.

[0158] A resin injection mark is formed on the side of the first resin, with a surface rougher than other areas of the side of the first resin.

[0159] Postscript 15.

[0160] According to the semiconductor devices described in Appendix 14, among which,

[0161] The resin injection mark is a shape that extends with the second direction as the long side.

[0162] Explanation of reference numerals in the attached figures

[0163] A1, A11~A13, A2, A21~A23: Semiconductor devices

[0164] 11: First semiconductor element; 12: Second semiconductor element

[0165] 13: Third semiconductor element; 111, 121, 131: Main surface electrode

[0166] 112, 122, 132: Back electrode; 19: Conductive bonding layer

[0167] 2: First Lead 201: First Main Face

[0168] 202: First back side; 203: Plating

[0169] 21: First solder pad portion; 22: First terminal portion

[0170] 3: Second lead 301: Second main face

[0171] 302: Second back side; 31: Second solder pad area

[0172] 311: End edge 312: Recessed portion

[0173] 32: Second terminal section; 4: Third lead wire

[0174] 401: Third front face; 402: Third back face

[0175] 41: Third pad portion; 411: Edge

[0176] 412: Recessed portion 42: Third terminal portion

[0177] 5: First bond line; 6: Second bond line

[0178] 8: Sealing resin 81: Resin main surface

[0179] 82: Back side of resin 83: Side side of first resin

[0180] 84: Second resin side surface 85: Third resin side surface

[0181] 86: Fourth resin side L1, L2: Length.

Claims

1. A semiconductor device, characterized in that, include: A first lead having a first pad portion; A first semiconductor element is disposed on one side of the first pad portion in the thickness direction; The second lead has a second pad portion that is spaced apart from the first pad portion on one side of a first direction orthogonal to the thickness direction; A second semiconductor element is disposed on one side of the second pad portion in the thickness direction; A first bonding line that is bonded to the first semiconductor element; The second bonding wire is bonded to the second semiconductor element; and A sealing resin covers the first semiconductor element, the second semiconductor element, the first pad portion, the second pad portion, the first bonding wire, and the second bonding wire. Viewed in the first direction, the first semiconductor element overlaps with the second semiconductor element. The first semiconductor element is configured to be offset on any one side of the first pad portion in a second direction orthogonal to the thickness direction and the first direction. The second semiconductor element is configured such that it is biased against one side in the second direction within the second pad portion.

2. The semiconductor device according to claim 1, characterized in that: The length of the portion of the first semiconductor element overlapping the second semiconductor element when viewed in the first direction is 60% or more relative to the length of the first semiconductor element in the second direction.

3. The semiconductor device according to claim 1, characterized in that: When viewed in the first direction, the second semiconductor element completely overlaps with the first semiconductor element.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that: The second bonding wire is electrically connected to the second semiconductor element and the first pad portion.

5. The semiconductor device according to any one of claims 1 to 4, characterized in that: The second pad portion has a recess that extends inward from the end edge in the first direction toward the inside of the first direction. The second semiconductor element is arranged at a distance from the recess in the second direction.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that: It also includes a third lead having a third pad portion that is spaced apart from the first pad portion on the other side of the first direction.

7. The semiconductor device according to claim 6, characterized in that: The first bonding wire is electrically connected to the first semiconductor element and the third pad portion.

8. The semiconductor device according to claim 7, characterized in that: The first semiconductor element and the second semiconductor element are diodes.

9. The semiconductor device according to claim 6, characterized in that: It also includes a third semiconductor element disposed on one side of the thickness direction of the third pad portion. Viewed in the first direction, the third semiconductor element overlaps with the first semiconductor element and the second semiconductor element.

10. The semiconductor device according to claim 9, characterized in that: Viewed in the first direction, the third semiconductor element completely overlaps with both the first and second semiconductor elements.

11. The semiconductor device according to claim 9 or 10, characterized in that: The first bonding wire is electrically connected to both the first semiconductor element and the third semiconductor element. The second bonding wire is electrically connected to the second semiconductor element and the first semiconductor element.

12. The semiconductor device according to any one of claims 6 to 11, characterized in that: The first lead has a first terminal portion that is connected to one side of the first pad portion in the second direction and at least a portion of it is exposed from the sealing resin. The second lead has a second terminal portion that is connected to the other side of the second pad portion in the second direction, and at least a portion of it is exposed from the sealing resin. The third lead has a third terminal portion that is connected to the other side of the third pad portion in the second direction and at least a portion of it is exposed from the sealing resin.

13. The semiconductor device according to claim 12, characterized in that: The first semiconductor element is configured such that it is biased against one side in the second direction within the first pad portion. The second semiconductor element is configured such that it is biased against one side of the second direction in the second pad portion.

14. The semiconductor device according to any one of claims 1 to 13, characterized in that: The sealing resin has a first resin side facing the opposite side of the first direction. A resin injection mark is formed on the side of the first resin, with a surface rougher than other areas of the side of the first resin.

15. The semiconductor device according to claim 14, characterized in that: The resin injection mark is a shape that extends with the second direction as the long side.

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