A temperature control method, device, equipment and medium suitable for chip aging test

Abstract

The application discloses a temperature control method and device suitable for chip aging test, equipment and medium, and belongs to the technical field of temperature control. The method comprises the following steps: acquiring a current box temperature and a current shell temperature of a chip, performing real-time detection on the gas in the test box based on a preset modulation signal, outputting current spectral feature data and a current gas temperature of the gas, and calibrating the temperature based on the same, so as to obtain an environmental temperature after calibration which is closer to a real working condition; correcting a heating power adjustment parameter based on the environmental temperature after calibration, and jointly determining a power adjustment amount of a heating unit based on the heating power adjustment parameter after correction, the spectral feature of the gas, an environmental temperature deviation and a chip shell temperature deviation, so that an accurate temperature control process is realized. Through detection on the spectral feature of the gas and the gas temperature and coupling analysis on multiple source temperatures, the application can effectively improve the accuracy and stability of temperature control in the chip aging test.

Description

Technical Field

[0001] This application relates to the field of temperature control technology, and in particular to a temperature control method, apparatus, equipment and medium suitable for chip aging tests. Background Technology

[0002] During chip aging tests, precise monitoring and adjustment of ambient temperature and chip casing temperature can ensure that the chip is under stable and reliable test conditions, thereby improving the accuracy of aging test results and ensuring the chip's factory performance and reliability.

[0003] However, when traditional technologies control the temperature of chip aging test chambers, they usually only collect the ambient temperature inside the chamber or the surface temperature of the chip as the control basis, without collecting and analyzing the gas characteristics inside the chamber. As a result, during the temperature adjustment process, the heating power is often adjusted directly based on a single temperature deviation without comprehensively considering the coupling effect between gas composition, gas temperature, ambient temperature and chip shell temperature.

[0004] Due to the lack of a temperature calibration mechanism based on gas spectroscopy and the lack of multi-source temperature fusion analysis, the temperature during chip aging tests is easily affected by factors such as changes in gas composition or airflow temperature within the test chamber. This leads to deviations between the acquired ambient temperature and the actual temperature, resulting in problems such as temperature control lag, overshoot, or excessive fluctuations. Traditional technologies cannot guarantee the accuracy and stability of temperature control, resulting in low reliability of chip aging tests and failing to meet the requirements of high-precision and high-stability chip aging tests. Summary of the Invention

[0005] The main purpose of this application is to propose a temperature control method, device, equipment and medium suitable for chip aging tests. It not only uses the detected spectral characteristics to assist in temperature calibration, but also makes joint decisions based on the detected gas temperature and other temperatures, thus optimizing the existing heating power adjustment logic and effectively ensuring the accuracy and stability of temperature control in chip aging tests.

[0006] To achieve the above objectives, one aspect of this application proposes a temperature control method suitable for chip aging tests, the method comprising: Obtain the current chamber temperature inside the chip aging test chamber and the current outer shell temperature of the chip inside the chip aging test chamber; The gas inside the chip aging test chamber is detected based on a preset modulation signal, and the current spectral characteristic data and current gas temperature of the gas are output; wherein, the modulation signal is used to detect the gas characteristics of the gas. Based on the first temperature difference between the current chamber temperature and the current gas temperature, and the current spectral characteristic data, the current gas temperature is calibrated to generate a calibrated gas temperature, which is then used as the current ambient temperature inside the chip aging test chamber. Based on the second temperature difference between the current ambient temperature and the preset target ambient temperature, the heating power adjustment parameters of the heating unit inside the chip aging test chamber are corrected to generate corrected heating power adjustment parameters; wherein, the heating unit is used to control the shell temperature of the chip; The power adjustment amount of the heating unit is determined based on the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference between the current shell temperature and the preset target shell temperature. The heating power of the heating unit is adjusted according to the power adjustment amount.

[0007] Furthermore, in some embodiments, the current spectral feature data includes: signal-to-noise ratio and full width at half maximum (FWHM) of the absorption spectral lines; The step of calibrating the current gas temperature to generate a calibrated gas temperature includes: The calibrated gas temperature is generated based on the following preset linear calibration model; ; in, The calibrated gas temperature; The current gas temperature; The linearity coefficient is used to indicate the weight of the influence of the first temperature difference on the calibration result. This is the first temperature difference value; This is a linear calibration constant used to compensate for temperature deviations; This is the correction factor for the signal-to-noise ratio. This is the signal-to-noise ratio reference value. For signal-to-noise ratio, This is the correction factor for the full width at half maximum (FWHM) of the absorption spectral line. The half-width at half maximum (FWHM) of the absorption spectral line. This is the reference value for the full width at half maximum (FWHM) of the absorption spectral line.

[0008] Furthermore, in some embodiments, the heating power adjustment parameters include: a temperature deviation response parameter for indicating the response characteristics to temperature deviation, a static error correction parameter for indicating the elimination of static temperature deviation under accumulated historical deviation, and a temperature change trend response parameter for indicating the suppression of temperature fluctuations based on the temperature change trend. The generation of the corrected heating power adjustment parameters includes: The corrected heating power adjustment parameters are calculated using the following formula: ; in, The corrected temperature deviation response parameters, For temperature deviation response parameters, This is the correction coefficient for the temperature deviation response parameter; This is the second temperature difference value; These are the corrected static error correction parameters. These are static error correction parameters. These are the correction coefficients for the static error correction parameters; The corrected temperature change trend response parameters, For the response parameters of temperature change trend, This is the correction coefficient for the response parameter to the temperature change trend.

[0009] Furthermore, in some embodiments, the current spectral feature data further includes: the peak value of the second harmonic signal; Determining the power adjustment amount of the heating unit includes: Based on the peak amplitude of the second harmonic and the amplitude sampling period, the rate of change corresponding to the peak amplitude of the second harmonic is determined. The power adjustment amount of the heating unit is calculated according to the following formula: ; ;

[0010] ; in, This refers to the power adjustment amount of the heating unit. This is the third temperature difference value. The sampling period is used to indicate the time interval between temperature data acquisition and power adjustment. Used to indicate the total cumulative amount of static deviation between the chip's case temperature and the target case temperature over time; This is the sequence number of the sampling period. This is the sequence number of the current sampling period. For the first The third temperature difference value, This is the third temperature difference value from the previous sampling period. This is the reference power for the heating unit. Integration corresponding to ambient temperature The final feedforward coefficients, The rate of change corresponding to the peak value of the second harmonic signal; This is a correction factor for the rate of change of the peak value of the second harmonic signal; The half-width at half maximum (FWHM) of the absorption spectral lines Corrected feedforward coefficients; The initial feedforward coefficients corresponding to the ambient temperature. The full width at half maximum (FWHM) of the absorption spectral line The corresponding temperature uniformity coefficient is used to quantify the uniformity of temperature distribution inside the chamber.

[0011] Further, in some embodiments, adjusting the current heating power of the heating unit according to the power adjustment amount includes: Convert the power adjustment amount into digital control commands; The digital control command is sent to the temperature control circuit inside the chip aging test chamber through a preset communication interface, so that the temperature control circuit converts the digital control command into a drive signal and outputs it to the heating unit; wherein, the heating unit continuously adjusts the current heating power according to the drive signal until the chip's shell temperature converges to the preset target shell temperature.

[0012] Furthermore, in some embodiments, the current gas temperature includes: the current oxygen temperature; The method of detecting the gas inside the chip aging test chamber based on a preset modulation signal and outputting the current spectral characteristic data and current gas temperature includes: Based on the characteristic absorption spectrum of oxygen, a modulation signal is generated by superimposing a triangular wave scanning signal and a dual-frequency sine wave modulation signal. The laser is driven by the modulation signal to output a synchronous laser beam, which is split into a probe beam and a reference beam by a dual-path beam splitting; wherein, the probe beam is transmitted to the inside of the chip aging test chamber and passes through the oxygen inside the chamber, while the reference beam does not enter the chip aging test chamber. The probe light and the reference light are collected respectively to obtain the probe electrical signal and the reference electrical signal; The detection electrical signal and the reference electrical signal are normalized, harmonics extracted, and feature analyzed in sequence to output the current spectral characteristic data of oxygen and the current gas temperature.

[0013] To achieve the above objectives, another aspect of this application proposes a temperature control device suitable for chip aging tests, the device comprising: The first temperature acquisition module is used to acquire the current chamber temperature inside the chip aging test chamber and the current shell temperature of the chip inside the chip aging test chamber. The second temperature acquisition module is used to detect the gas inside the chip aging test chamber based on a preset modulation signal, and output the current spectral characteristic data of the gas and the current gas temperature; wherein, the modulation signal is used to detect the gas characteristics of the gas. The parameter correction module is used to calibrate the current gas temperature based on a first temperature difference between the current chamber temperature and the current gas temperature, and the current spectral characteristic data, to generate a calibrated gas temperature, which is then used as the current ambient temperature inside the chip aging test chamber. Based on a second temperature difference between the current ambient temperature and a preset target ambient temperature, the module corrects the heating power adjustment parameters of the heating unit inside the chip aging test chamber, generating corrected heating power adjustment parameters. The heating unit is used to control the outer casing temperature of the chip. The power adjustment generation module is used to determine the power adjustment amount of the heating unit based on the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference between the current shell temperature and the preset target shell temperature. The heating power adjustment module is used to adjust the current heating power of the heating unit according to the power adjustment amount.

[0014] Furthermore, in some embodiments, the heating power adjustment module includes: an instruction conversion unit, a temperature control circuit, and a heating unit; The heating power adjustment module is used to adjust the current heating power of the heating unit according to the power adjustment amount, specifically including: The instruction conversion unit is used to convert the power adjustment amount into a digital control instruction, and send the digital control instruction to the temperature control circuit through a preset communication interface; The temperature control circuit is used to convert the digital control command into a drive signal and output it to the heating unit; The heating unit is used to continuously adjust the current heating power according to the driving signal until the chip's casing temperature converges to the preset target casing temperature.

[0015] To achieve the above objectives, another aspect of this application provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the temperature control method for chip aging tests described above.

[0016] To achieve the above objectives, another aspect of the embodiments of this application proposes a computer-readable storage medium storing a computer program that, when executed by a processor, implements the aforementioned temperature control method for chip aging tests.

[0017] The embodiments of this application include at least the following beneficial effects: This application provides a temperature control method, apparatus, equipment, and medium suitable for chip aging tests. The method of this application not only obtains the current chamber temperature and the current shell temperature of the chip aging test chamber, but also performs real-time detection of the gas inside the test chamber based on a preset modulation signal, outputs the current spectral characteristic data of the gas and the current gas temperature, and calibrates the gas temperature based on the first temperature difference between the current chamber temperature and the current gas temperature, combined with the current spectral characteristic data, to eliminate temperature deviations caused by factors such as changes in gas composition or airflow temperature, and obtains a calibrated ambient temperature that is closer to the actual working conditions; furthermore, based on the calibrated ambient temperature, the heating power adjustment parameters are first corrected, and then the power adjustment amount of the heating unit is determined jointly based on the corrected heating power adjustment parameters, gas spectral characteristics, ambient temperature deviation, and chip shell temperature deviation. This allows for comprehensive consideration of the coupling effects between gas composition, gas temperature, ambient temperature, and chip shell temperature, realizing a precise temperature control process of multi-source temperature fusion and multi-deviation coordinated adjustment. Unlike traditional technologies, this application not only uses the detected spectral characteristics to assist in temperature calibration and improve the reliability of temperature detection, but also optimizes the existing heating power adjustment logic by making joint decisions based on the detected gas temperature and other temperatures. This significantly reduces the hysteresis and overshoot of temperature control, reduces temperature fluctuations, and allows the ambient temperature of the test chamber and the chip casing temperature to stably and accurately approach the preset target values. This effectively improves the accuracy and stability of temperature control in chip aging tests, thereby enhancing the reliability and consistency of chip aging tests and meeting the requirements for high-precision and high-stability chip aging tests. Attached Figure Description

[0018] Figure 1 This is a schematic flowchart of a temperature control method for chip aging tests provided in an embodiment of this application; Figure 2 This is a schematic diagram of the chip aging test chamber and TDLAS temperature monitoring layout provided in the embodiments of this application; Figure 3 This is a block diagram of the closed-loop control system principle for chip aging test temperature provided in the embodiments of this application; Figure 4 This is a schematic diagram of a temperature control device suitable for chip aging tests provided in an embodiment of this application; Figure 5This is a schematic diagram of the hardware structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit it. In the following description, when referring to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with those of this application; they are merely examples of apparatuses and methods consistent with some aspects of the embodiments of this application as detailed in the appended claims.

[0020] It is understood that the terms “first,” “second,” etc., used in this application may be used herein to describe various concepts, but unless otherwise stated, these concepts are not limited by these terms. These terms are only used to distinguish one concept from another. For example, without departing from the scope of the embodiments of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the words “if,” “when,” or “in response to a determination” as used herein may be interpreted as “when…” or “when…” or “in response to a determination.”

[0021] As used in this application, the terms "several", "each", etc., "several" include one, two or more, "each" refers to each of the corresponding plurality, and "any" refers to any one of the plurality.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0023] Before providing a detailed description of the embodiments of this application, some of the nouns and terms involved in the embodiments of this application will be explained first. The nouns and terms involved in the embodiments of this application are subject to the following interpretations.

[0024] (1) TDLAS (Tunable Diode Laser Absorption Spectroscopy) is a non-contact optical detection technology based on the characteristic absorption spectrum of gas molecules and the narrow linewidth characteristics of tunable diode lasers. The core is to use the laser output from the tunable diode laser to scan the characteristic absorption spectrum of the target gas molecules. By detecting the absorption attenuation signal after the laser passes through the gas, and combining it with spectral analysis algorithms, the physical and chemical parameters of the gas, such as temperature, concentration, and pressure, can be obtained.

[0025] (2) The PID (Proportional-Integral-Derivative Control Algorithm) algorithm refers to the proportional-integral-derivative control algorithm, which is a closed-loop control algorithm based on deviation feedback. The proportional term responds to the current temperature deviation, the integral term accumulates historical deviations to eliminate static errors, and the derivative term suppresses system overshoot and fluctuations according to the deviation change trend. The three work together to output the control quantity, so as to achieve high-precision and high-stability closed-loop regulation of the controlled object.

[0026] Figure 1 This is an optional flowchart of a temperature control method for chip aging tests provided in an embodiment of this application. Figure 1 The method may include, but is not limited to, steps S1 to S5: Step S1: Obtain the current chamber temperature inside the chip aging test chamber and the current outer shell temperature of the chip inside the chip aging test chamber; Step S2: Detect the gas inside the chip aging test chamber based on a preset modulation signal, and output the current spectral characteristic data and current gas temperature of the gas; wherein, the modulation signal is used to detect the gas characteristics of the gas. Step S3: Based on the first temperature difference between the current chamber temperature and the current gas temperature, and the current spectral feature data, calibrate the current gas temperature to generate a calibrated gas temperature, and then use the calibrated gas temperature as the current ambient temperature inside the chip aging test chamber. Based on the second temperature difference between the current ambient temperature and the preset target ambient temperature, the heating power adjustment parameters of the heating unit inside the chip aging test chamber are corrected to generate corrected heating power adjustment parameters; wherein, the heating unit is used to control the shell temperature of the chip; Step S4: Determine the power adjustment amount of the heating unit based on the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference between the current shell temperature and the preset target shell temperature. Step S5: Adjust the current heating power of the heating unit according to the power adjustment amount.

[0027] Steps S1 to S5 as shown in the embodiments of this application are as follows: First, by obtaining the current chamber temperature and chip shell temperature inside the chip aging test chamber through step S1, basic temperature data can be provided for subsequent temperature calibration and control, ensuring that temperature adjustment has a reliable initial basis; by introducing a preset modulation signal to detect the gas inside the test chamber through step S2, the current spectral characteristic data and current gas temperature of the gas can be obtained, which can realize the synchronous acquisition of gas characteristics and gas temperature, making up for the defect of traditional technology that only acquires a single temperature and ignores the influence of gas state.

[0028] Secondly, by combining the first temperature difference with the current spectral feature data in step S3, the current gas temperature is calibrated, and the calibrated gas temperature is used as the current ambient temperature. This can effectively eliminate detection errors caused by gas composition, airflow disturbances, etc., and improve the authenticity and accuracy of the ambient temperature. At the same time, the heating power adjustment parameters are corrected based on the second temperature difference, which can make the control parameters more in line with the actual working conditions and improve the rationality of temperature regulation. Furthermore, by combining the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference in step S4 to determine the power adjustment amount of the heating unit, the coupled analysis and coordinated control of the ambient temperature and the chip casing temperature are realized, avoiding problems such as control lag and overshoot caused by single deviation adjustment. Finally, by adjusting the heating power of the heating unit according to the power adjustment amount in step S5, the internal temperature of the test chamber can be accurately and stably regulated, which ultimately improves the accuracy and reliability of the chip aging test temperature control and ensures the consistency and credibility of the aging test results.

[0029] For step S1, in some embodiments, the chip aging test chamber is equipped with a temperature acquisition module, which includes a chamber temperature sensor and a chip shell temperature sensor; wherein, the chamber temperature sensor is arranged on the inner wall of the cavity of the chip aging test chamber or in the air circulation area, and is used to directly collect and obtain the current chamber temperature inside the chip aging test chamber. Furthermore, a chip casing temperature sensor is positioned close to or in contact with the chip casing surface. It is used to directly collect and obtain the current casing temperature of the chip inside the chip aging test chamber, thereby providing basic temperature data for subsequent temperature calibration, parameter correction, and power adjustment.

[0030] For step S2, in some embodiments, the current gas temperature includes: the current oxygen temperature; The method of detecting the gas inside the chip aging test chamber based on a preset modulation signal and outputting the current spectral characteristic data and current gas temperature includes: Based on the characteristic absorption spectrum of oxygen, a modulation signal is generated by superimposing a triangular wave scanning signal and a dual-frequency sine wave modulation signal. The laser is driven by the modulation signal to output a synchronous laser beam, which is split into a probe beam and a reference beam by a dual-path beam splitting; wherein, the probe beam is transmitted to the inside of the chip aging test chamber and passes through the oxygen inside the chamber, while the reference beam does not enter the chip aging test chamber. The probe light and the reference light are collected respectively to obtain the probe electrical signal and the reference electrical signal; The detection electrical signal and the reference electrical signal are normalized, harmonics extracted, and feature analyzed in sequence to output the current spectral characteristic data of oxygen and the current gas temperature.

[0031] For illustrative purposes, the current gas temperature can also be the current nitrogen temperature; then, the principle for detecting the current nitrogen temperature is the same as that for detecting oxygen, and will not be elaborated here.

[0032] In some embodiments, the present invention may employ a wavelength modulation method based on TDLAS technology to monitor the gas temperature inside the chamber in real time, thereby obtaining spectral characteristic data of oxygen or nitrogen and the gas temperature.

[0033] It is understood that when the laser is driven by a modulation signal composed of a triangular wave scanning signal and a dual-frequency sine wave modulation signal in the embodiments of the present invention, the laser beam can be divided into a probe beam and a reference beam by combining a dual-optical-path structure, which can effectively eliminate the influence of light source fluctuation, optical path loss, circuit drift and environmental interference on the detection results, and improve the stability and anti-interference ability of gas detection. The probe light penetrates the oxygen or nitrogen gas inside the chamber, accurately capturing the gas's characteristic absorption information. The reference light, which does not enter the chamber, serves as a benchmark signal for real-time calibration of the detection results. By normalizing, extracting harmonics, and analyzing the features of the probe and reference electrical signals, the accuracy of gas spectral feature extraction and the sensitivity of gas temperature detection can be significantly improved, resulting in accurate and stable spectral feature data and gas temperature output. Furthermore, this embodiment of the invention employs a wavelength modulation method based on TDLAS technology for real-time monitoring of the gas inside the chamber. This method offers advantages such as fast response, high detection accuracy, non-invasive detection, and no interference with the flow field inside the chamber. It can reliably and in real-time acquire the gas characteristics inside the chamber under the complex conditions of chip aging tests, thus improving the accuracy and reliability of the entire temperature control system from the source of detection.

[0034] In some embodiments, please refer to Figure 2 ,like Figure 2 The schematic diagram of the chip aging test chamber and TDLAS temperature monitoring layout shown is an embodiment of the chip aging test chamber of the present invention (i.e. Figure 2The chamber contains multiple layers of clamps to support the chip under test; a TDLAS temperature sensor is installed on the top of the chamber, and thermocouples are installed on the left and right sides of the chamber to collect the temperature of the chamber.

[0035] In the gas temperature detection process of step S2, the laser inside the TDLAS temperature sensor outputs a laser beam based on a preset modulation signal, which is composed of a triangular wave scanning signal and a dual-frequency sine wave modulation signal. This laser beam is split into a probe beam and a reference beam by a dual-path beam splitting structure. The probe light is transmitted into the chamber, passes through the target gas such as oxygen or nitrogen, and undergoes characteristic absorption by the gas molecules; while the reference light does not enter the chamber and is directly used as a reference signal for subsequent calibration.

[0036] Subsequently, the TDLAS temperature sensor performs photoelectric conversion on the probe light passing through the temperature chamber and the reference light not entering the temperature chamber, respectively, to obtain the corresponding probe electrical signal and reference electrical signal. By normalizing, extracting harmonics and analyzing features of the two electrical signals, the current spectral characteristic data of the target gas, such as oxygen or nitrogen, and the current gas temperature can be output.

[0037] As an illustration, the thermocouples on both sides of the chamber can be used to collect the chamber temperature, providing reference data for the calibration of the gas temperature in the subsequent step S3, thereby further improving the accuracy and reliability of temperature detection.

[0038] Optionally, Figure 2 The fixture inside the temperature chamber is a temperature control fixture, which includes a temperature probe, a heating module, and an information readback module. It can be controlled in a closed loop through the onboard main control chip and temperature control circuit to ensure that the chip temperature reaches the set value.

[0039] For step S3, in some embodiments, the current spectral feature data includes: signal-to-noise ratio and absorption line half-width at half maximum (FWHM); Therefore, the process of calibrating the current gas temperature based on the first temperature difference between the current chamber temperature and the current gas temperature, and the current spectral characteristic data, specifically includes: The calibrated gas temperature is generated based on the following preset linear calibration model; ; in, The calibrated gas temperature; The current gas temperature; The linearity coefficient is used to indicate the weight of the influence of the first temperature difference on the calibration result. This is the first temperature difference value; This is a linear calibration constant used to compensate for temperature deviations; This is the correction factor for the signal-to-noise ratio. This is the signal-to-noise ratio reference value. For signal-to-noise ratio, This is the correction factor for the full width at half maximum (FWHM) of the absorption spectral line. The half-width at half maximum (FWHM) of the absorption spectral line. This is the reference value for the full width at half maximum (FWHM) of the absorption spectral line.

[0040] Indicatively, the preset linear calibration model proposed in this embodiment of the invention can accurately calibrate the gas temperature detected by TDLAS technology by fusing multi-dimensional information, such as temperature difference, spectral signal-to-noise ratio, and absorption line half-width at half-maximum.

[0041] Based on the aforementioned preset linear calibration model, spectral quality-related parameters, such as signal-to-noise ratio, are introduced. absorption line half-width at half-maximum It can effectively suppress temperature measurement deviations caused by changes in gas composition, airflow disturbances, optical path loss, or interference from the detection environment, ensuring that the calibrated gas temperature... It more closely reflects the actual temperature inside the incubator.

[0042] Moreover, through correction coefficients , Compared with the benchmark value , This allows the present invention to dynamically adjust the calibration intensity based on the real-time detected spectral quality during application. When the signal-to-noise ratio of the spectrum... Lower or absorption line half-width at half maximum (FWHM) When the model deviates from the reference, it will automatically increase the correction force to ensure that reliable calibration results can be obtained under different operating conditions.

[0043] Understandably, signal-to-noise ratio It directly reflects the quality of the spectral signal. When A lower reading indicates strong noise interference during the detection process; in this case, the gas temperature measured by TDLAS will be lower. Reliability is reduced. In this embodiment of the invention, the model is... Item, can Deviation from benchmark It automatically increases the strength of calibration correction, thereby suppressing the negative impact of low-quality spectral data on calibration results and improving the robustness of calibration.

[0044] absorption line half-width at half maximum (FWHM) It is directly related to the thermal motion and pressure of gas molecules and is an important physical quantity reflecting gas temperature and pressure. In this embodiment of the invention, by introducing... This feature allows the model to incorporate the physical morphological characteristics of the spectrum into the calibration logic, so that the calibration process is no longer a simple mathematical correction, but an adjustment based on the physical properties of the gas, thereby significantly improving the accuracy of the calibration results.

[0045] In some embodiments of the present invention, the heating power adjustment parameters proposed in the embodiments of the present invention actually include: a temperature deviation response parameter for indicating the response characteristics to temperature deviation, a static error correction parameter for indicating the elimination of static temperature deviation under accumulated historical deviation, and a temperature change trend response parameter for indicating the suppression of temperature fluctuation based on the temperature change trend. Indicatively, the temperature deviation response parameter can quickly respond to the current temperature deviation, such as the second temperature difference, ensuring that the system can quickly approach the target temperature and improve the dynamic response speed of the control.

[0046] Static error correction parameters can eliminate the static error of the system in steady state, thereby preventing the temperature from fluctuating slightly around the target value for a long time and improving steady-state accuracy.

[0047] Temperature change trend response parameters can predict temperature change trends and adjust heating power in advance, effectively suppressing temperature overshoot and oscillation, and making the temperature curve smoother and more stable.

[0048] Therefore, by designing the above three parameters, this invention allows for flexible configuration based on different operating conditions during temperature control. For example, during rapid temperature changes, the temperature deviation response parameter can be increased to accelerate the response; when approaching the target temperature, the static error correction parameter can be increased to eliminate residual error; and when environmental interference is significant, the temperature change trend response parameter can be increased to enhance stability, thereby ensuring that the system maintains optimal control performance throughout complex chip aging tests.

[0049] Furthermore, in the process of correcting the heating power adjustment parameters of the heating unit inside the chip aging test chamber based on the second temperature difference between the current ambient temperature and the preset target ambient temperature, the specific steps in this embodiment of the invention are as follows: The corrected heating power adjustment parameters are calculated using the following formula: ; in, The corrected temperature deviation response parameters, For temperature deviation response parameters, This is the correction coefficient for the temperature deviation response parameter; This is the second temperature difference value; These are the corrected static error correction parameters. These are static error correction parameters. These are the correction coefficients for the static error correction parameters; The corrected temperature change trend response parameters, For the response parameters of temperature change trend, This is the correction coefficient for the response parameter to the temperature change trend.

[0050] Indicatively, the correction formula described above in this embodiment of the invention uses the second temperature difference value As a dynamic correction factor, it performs real-time adaptive adjustment of the temperature deviation response parameters, static error correction parameters, and temperature change trend response parameters of the heating power adjustment.

[0051] In traditional control processes, heating power adjustment parameters are usually fixed and cannot adapt to real-time changes in temperature deviation. However, the embodiments of this invention allow for parameter correction to be adjusted according to the current temperature deviation. The system is directly linked, automatically increasing the control intensity when the temperature deviation is large and automatically decreasing the control intensity when the temperature deviation is small, thus realizing a dynamic control strategy that responds strongly when the deviation is large and weakly when the deviation is small.

[0052] Schematic illustration: The thermal field inside the aging test chamber is complex, typically subject to various interferences such as chip heating and airflow disturbances. Based on the second temperature difference... The parameter correction can automatically adjust the control strength according to the real-time deviation status, effectively suppress the influence of external disturbances on the control effect, and ensure stable and reliable operation under various complex working conditions.

[0053] It is understood that the embodiments of the present invention are based on a second temperature difference. The parameter correction process is equivalent to adding a layer of feedforward correction logic on the basis of traditional power control. That is, it no longer reacts passively to deviations, but actively adjusts the control strategy according to the magnitude of the deviation, predicts and optimizes the control output in advance, thereby greatly improving the dynamic performance of the control.

[0054] The three parameters after correction , , It can also serve as the core input for calculating the final power adjustment in step S4, and its accuracy directly determines the final control effect. Therefore, in this step S3, based on the second temperature difference... The correction allows subsequent power adjustments to be based on control parameters that are more closely aligned with the current operating conditions, thereby achieving coordinated and precise control of ambient temperature and chip casing temperature.

[0055] For step S4, in some embodiments, the current spectral feature data further includes: the peak value of the second harmonic signal; therefore, the process of determining the power adjustment amount of the heating unit specifically includes: First, the rate of change corresponding to the peak amplitude of the second harmonic can be determined based on the peak amplitude of the second harmonic and the amplitude sampling period. Next, the power adjustment amount of the heating unit is calculated according to the following formula: ; ;

[0056] ; in, This refers to the power adjustment amount of the heating unit. This is the third temperature difference value. The sampling period is used to indicate the time interval between temperature data acquisition and power adjustment. Used to indicate the total cumulative amount of static deviation between the chip's case temperature and the target case temperature over time; This is the sequence number of the sampling period. This is the sequence number of the current sampling period. For the first The third temperature difference value, This is the third temperature difference value from the previous sampling period. This is the reference power for the heating unit. Integration corresponding to ambient temperature The final feedforward coefficients, The rate of change corresponding to the peak value of the second harmonic signal; This is a correction factor for the rate of change of the peak value of the second harmonic signal; The half-width at half maximum (FWHM) of the absorption spectral lines Corrected feedforward coefficients; The initial feedforward coefficients corresponding to the ambient temperature. The full width at half maximum (FWHM) of the absorption spectral line The corresponding temperature uniformity coefficient is used to quantify the uniformity of temperature distribution inside the chamber.

[0057] In illustrative terms, this embodiment of the invention constructs an adaptive heating power adjustment calculation model by integrating temperature deviation, historical deviation accumulation, temperature change trend, and spectral physical characteristics.

[0058] By using the heating power adjustment calculation model described above, we can move beyond relying solely on a single temperature deviation for adjustment and instead take into account the temperature deviation of the chip casing. Historical deviation cumulative item Temperature change trend item and spectral characteristics (such as the full width at half maximum of absorption lines). The rate of change corresponding to the peak value of the second harmonic signal This enables precise and coordinated control of ambient temperature and chip casing temperature, effectively avoiding control lag, overshoot, or steady-state error caused by single adjustment.

[0059] Understandably, It can be used as a proportional term, which can quickly respond to the current temperature deviation and ensure that the system can quickly approach the target temperature.

[0060] It can be used as an integral term, which can eliminate static errors and prevent the temperature from fluctuating around the target value for a long time.

[0061] It can be used as a differential term, and by predicting temperature change trends, overshoot and oscillation can be suppressed.

[0062] The combination of the above three factors can make the temperature control curve smoother and more precise.

[0063] Furthermore, in the heating power adjustment calculation model of the present invention, the full width at half maximum (FWHM) of the absorption spectral line is also introduced. The rate of change corresponding to the peak value of the second harmonic signal This allows the system to sense the thermal motion and temperature uniformity of the gas inside the chamber. When the thermal field inside the chamber is uneven or the detection environment changes, the model automatically adjusts the feedforward coefficients and optimizes the power adjustment, thereby improving the system's robustness under complex and aging conditions.

[0064] Schematic representation of the rate of change of the peak value of the second harmonic signal. It directly reflects the dynamic changes in gas concentration or thermal field state within the incubator. Through... right Make corrections so that in When the temperature field or gas state changes rapidly, the feedforward coefficient will automatically increase, enabling the heating power adjustment to respond to this change in advance. This effectively suppresses temperature fluctuations caused by sudden changes in state and significantly improves the dynamic response speed and anti-interference capability of the control system.

[0065] In the embodiments of the present invention, the following conclusions are drawn: At the same time, it can also be determined by the temperature uniformity coefficient. For the initial feedforward coefficients Make corrections to arrive at the following result Therefore, this invention can detect non-uniform thermal field within the chamber (i.e., absorption spectral line half-width at half-maximum). When (increases), It will automatically increase, so that the heating power adjustment can compensate for the effects of uneven thermal field in advance, thereby improving the uniformity of temperature distribution in the entire temperature chamber, avoiding local overheating or undercooling, and ensuring the consistency of chip aging test conditions.

[0066] Therefore, the embodiments of the present invention can not only perform feedback adjustment based on temperature deviation, but also perform feedforward compensation based on the physical state of the gas inside the chamber, thereby achieving high-precision and high-stability control of the temperature of the chip aging test chamber and improving the reliability and consistency of the aging test.

[0067] For step S5, in some embodiments, adjusting the current heating power of the heating unit according to the power adjustment amount includes: Convert the power adjustment amount into digital control commands; The digital control command is sent to the temperature control circuit inside the chip aging test chamber through a preset communication interface, so that the temperature control circuit converts the digital control command into a drive signal and outputs it to the heating unit; wherein, the heating unit continuously adjusts the current heating power according to the drive signal until the chip's shell temperature converges to the preset target shell temperature.

[0068] Indicatively, in the temperature control process of this invention, the power adjustment amount is obtained based on step S4, and the entire adjustment process in step S5 does not require manual intervention. From the generation and transmission of digital instructions to the driving adjustment of the heating unit, and then to the closed-loop determination of temperature convergence, a fully automated control process is formed. This not only significantly reduces the labor intensity and human error of manual operation, but also adapts to the long-cycle and high-precision test requirements of chip aging tests, ensuring that the heating power is always dynamically optimized according to the temperature state during the aging process that lasts for several hours or even several days, so as to maintain the stability of the test temperature.

[0069] Please see Figure 3 ,like Figure 3 The diagram shown illustrates the principle of the closed-loop temperature control system for chip aging tests. This closed-loop temperature control system mainly consists of a host computer, a driver board, an FPGA control module, and an aging board. Its implementation process is as follows: The host computer transmits the calculated power adjustment value to the driver board via Ethernet. The driver board converts the power adjustment value into digital control commands and sends the digital control commands to the FPGA module via preset communication interfaces such as I2C / JTAG. Figure 3 The circuit consists of FPGA1 and FPGA2. FPGA1 serves as the temperature control and monitoring circuit, responsible for the core temperature control logic processing; FPGA2 serves as an adapter board, used to expand the control interface and realize parallel control of multiple aging boards.

[0070] After receiving the digital control command, the FPGA module converts it into a corresponding PWM drive signal and outputs it to the heating unit on the aging board (i.e., Figure 3 (The heating block in the test plate). The chip carrier on the aging board is used to hold the chip under test, while the clamping mechanism ensures that the chip is in close contact with the heating block, ensuring efficient heat transfer.

[0071] Furthermore, the temperature sensor on the aging board collects the chip casing temperature and the ambient temperature of the chamber in real time, and feeds the temperature data back to the temperature control and monitoring circuit of FPGA1. Based on the feedback temperature data and gas characteristic data, and the power adjustment amount calculated in the previous steps S1 to S4, FPGA1 continuously optimizes the digital control instructions to drive the heating unit to dynamically adjust the heating power until the chip casing temperature converges to the preset target casing temperature.

[0072] Therefore, in this embodiment of the invention, the host computer can monitor the system status in real time via Ethernet, while the FPGA module is responsible for the precise control and data processing at the underlying level, ensuring that the heating power can be dynamically optimized according to the temperature status during long-term chip aging tests, and maintaining the stability and consistency of the test temperature.

[0073] In some embodiments, the present invention can be based on a PID algorithm to determine the power adjustment amount of the heating unit according to the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference between the current shell temperature and the preset target shell temperature. The junction temperature during the chip aging test can be precisely controlled according to the power adjustment amount, thereby improving the accuracy and reliability of the test results.

[0074] In summary, traditional technologies rely solely on a single temperature sensor to collect ambient or chip temperatures, making them susceptible to interference from factors such as gas composition and airflow disturbances. This invention, by introducing TDLAS wavelength modulation technology, can sequentially normalize, extract harmonics, and analyze features of the detected electrical signal and the reference electrical signal, outputting spectral characteristic data of the gas inside the chamber and the gas temperature. Furthermore, by combining the signal-to-noise ratio and the half-width at half-maximum (WHM) of the absorption spectrum to calibrate the gas temperature, it effectively eliminates detection errors and makes the ambient temperature more closely resemble real-world operating conditions.

[0075] Furthermore, traditional technologies often focus only on a single temperature target, while this invention integrates the ambient temperature deviation and the chip casing temperature deviation when calculating the power adjustment amount. Through multi-dimensional coupling analysis, it ensures the coordinated optimization of the test chamber ambient temperature and the actual heating state of the chip, avoiding control lag, overshoot or steady-state error caused by single adjustment, and ensuring the consistency of aging test conditions.

[0076] Furthermore, this invention also quantifies the uniformity of temperature distribution inside the temperature chamber by absorbing the half-width at half-maximum (WHM) of the absorption spectrum and incorporates it into feedforward control, effectively compensating for the effects of uneven thermal field and avoiding local overheating or overcooling. This allows the aging conditions of chips in different locations and batches to be consistent, significantly improving the repeatability, comparability, and reliability of aging test results.

[0077] Please see Figure 4 This application also provides a temperature control device suitable for chip aging tests, which can implement the above-mentioned temperature control method for chip aging tests. The device includes: The first temperature acquisition module 601 is used to acquire the current chamber temperature inside the chip aging test chamber and the current shell temperature of the chip inside the chip aging test chamber. The second temperature acquisition module 602 is used to detect the gas inside the chip aging test chamber based on a preset modulation signal, and output the current spectral characteristic data of the gas and the current gas temperature; wherein, the modulation signal is used to detect the gas characteristics of the gas. The parameter correction module 603 is used to calibrate the current gas temperature based on a first temperature difference between the current chamber temperature and the current gas temperature, and the current spectral characteristic data, to generate a calibrated gas temperature, which is then used as the current ambient temperature inside the chip aging test chamber. Based on a second temperature difference between the current ambient temperature and a preset target ambient temperature, the module also corrects the heating power adjustment parameters of the heating unit inside the chip aging test chamber, generating corrected heating power adjustment parameters. The heating unit is used to control the outer casing temperature of the chip. The power adjustment generation module 604 is used to determine the power adjustment amount of the heating unit based on the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference between the current shell temperature and the preset target shell temperature. The heating power adjustment module 605 is used to adjust the current heating power of the heating unit according to the power adjustment amount.

[0078] In some embodiments, the heating power adjustment module includes: an instruction conversion unit, a temperature control circuit, and a heating unit; The heating power adjustment module is used to adjust the current heating power of the heating unit according to the power adjustment amount, specifically including: The instruction conversion unit is used to convert the power adjustment amount into a digital control instruction, and send the digital control instruction to the temperature control circuit through a preset communication interface; The temperature control circuit is used to convert the digital control command into a drive signal and output it to the heating unit; The heating unit is used to continuously adjust the current heating power according to the driving signal until the chip's casing temperature converges to the preset target casing temperature.

[0079] It is understood that the content of the above method embodiments is applicable to the present device embodiments. The specific functions implemented by the present device embodiments are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0080] It should be noted that the device embodiments described above are merely illustrative. The modules described as separate components may or may not be physically separate, and the components shown as modules may or may not be physical modules; they may be located in one place or distributed across multiple network modules. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Furthermore, in the accompanying drawings of the device embodiments provided by this invention, the connection relationships between modules indicate that they have communication connections, which can be specifically implemented as one or more communication buses or signal lines. Those skilled in the art can understand and implement this without any creative effort.

[0081] Those skilled in the art will clearly understand that, for convenience and simplicity, the specific working process of the device described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0082] This application also provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the temperature control method described above for chip aging tests. This electronic device can include any smart terminal such as a tablet computer or in-vehicle computer.

[0083] It is understood that the content of the above method embodiments is applicable to this device embodiment. The specific functions implemented by this device embodiment are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0084] Please see Figure 5 , Figure 5 This illustrates the hardware structure of an electronic device according to another embodiment, the electronic device comprising: The processor 701 can be implemented using a general-purpose CPU (Central Processing Unit), microprocessor, application-specific integrated circuit (ASIC), or one or more integrated circuits, and is used to execute relevant programs to implement the technical solutions provided in the embodiments of this application. The memory 702 can be implemented as a read-only memory (ROM), a static storage device, a dynamic storage device, or a random access memory (RAM). The memory 702 can store the operating system and other application programs. When the technical solutions provided in the embodiments of this application are implemented through software or firmware, the relevant program code is stored in the memory 702 and is called and executed by the processor 701. The input / output interface 703 is used to implement information input and output; The communication interface 704 is used to enable communication and interaction between this device and other devices. Communication can be achieved through wired means (such as USB, Ethernet cable, etc.) or wireless means (such as mobile network, Wi-Fi, Bluetooth, etc.). Bus 705 transmits information between various components of the device (e.g., processor 701, memory 702, input / output interface 703, and communication interface 704); The processor 701, memory 702, input / output interface 703 and communication interface 704 are connected to each other within the device via bus 705.

[0085] The processor 701 may be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or any conventional processor. This processor is the control center of the terminal device, connecting various parts of the terminal device via various interfaces and lines.

[0086] The memory 702 can be used to store the computer program. The processor implements various functions of the terminal device by running or executing the computer program stored in the memory and calling data stored in the memory. The memory may mainly include a program storage area and a data storage area. The program storage area may store the operating system, at least one application program required for a function, etc.; the data storage area may store data created based on the use of the mobile phone, etc. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as hard disk, memory, plug-in hard disk, smart media card (SMC), secure digital card (SD), flash card, at least one disk storage device, flash memory device or other volatile solid-state storage device.

[0087] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described temperature control method for chip aging tests.

[0088] It is understood that the content of the above method embodiments is applicable to the present computer storage medium embodiments. The specific functions implemented by the present computer storage medium embodiments are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0089] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described temperature control method suitable for chip aging tests.

[0090] It is understood that the content of the above method embodiments is applicable to the embodiments of this computer program product. The specific functions implemented by the embodiments of this computer program product are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0091] Those skilled in the art will understand that all or some of the steps, apparatuses, or functional modules / units in the methods disclosed above can be implemented as software, firmware, hardware, or suitable combinations thereof.

[0092] The preferred embodiments of the present application have been described above with reference to the accompanying drawings, but this does not limit the scope of the claims of the present application. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and substance of the embodiments of the present application shall be within the scope of the claims of the present application.

Claims

1. A temperature control method suitable for chip aging tests, characterized in that, The method includes: Obtain the current chamber temperature inside the chip aging test chamber and the current outer shell temperature of the chip inside the chip aging test chamber; The gas inside the chip aging test chamber is detected based on a preset modulation signal, and the current spectral characteristic data and current gas temperature of the gas are output; wherein, the modulation signal is used to detect the gas characteristics of the gas. Based on the first temperature difference between the current chamber temperature and the current gas temperature, and the current spectral characteristic data, the current gas temperature is calibrated to generate a calibrated gas temperature, which is then used as the current ambient temperature inside the chip aging test chamber. Based on the second temperature difference between the current ambient temperature and the preset target ambient temperature, the heating power adjustment parameters of the heating unit inside the chip aging test chamber are corrected to generate corrected heating power adjustment parameters; wherein, the heating unit is used to control the shell temperature of the chip; The power adjustment amount of the heating unit is determined based on the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference between the current shell temperature and the preset target shell temperature. The heating power of the heating unit is adjusted according to the power adjustment amount.

2. The temperature control method for chip aging tests according to claim 1, characterized in that, The current spectral feature data includes: signal-to-noise ratio and full width at half maximum (FWHM) of absorption lines; The step of calibrating the current gas temperature to generate a calibrated gas temperature includes: The calibrated gas temperature is generated based on the following preset linear calibration model; ； in, The calibrated gas temperature; The current gas temperature; The linearity coefficient is used to indicate the weight of the influence of the first temperature difference on the calibration result. This is the first temperature difference value; This is a linear calibration constant used to compensate for temperature deviations; This is the correction factor for the signal-to-noise ratio. This is the signal-to-noise ratio reference value. For signal-to-noise ratio, This is the correction factor for the full width at half maximum (FWHM) of the absorption spectral line. The half-width at half maximum (FWHM) of the absorption spectral line. This is the reference value for the full width at half maximum (FWHM) of the absorption spectral line.

3. The temperature control method for chip aging tests according to claim 2, characterized in that, The heating power adjustment parameters include: a temperature deviation response parameter for indicating the response characteristics to temperature deviation, a static error correction parameter for indicating the elimination of static temperature deviation under accumulated historical deviation, and a temperature change trend response parameter for indicating the suppression of temperature fluctuations based on the temperature change trend. The generation of the corrected heating power adjustment parameters includes: The corrected heating power adjustment parameters are calculated using the following formula: ； in, The corrected temperature deviation response parameters, For temperature deviation response parameters, This is the correction coefficient for the temperature deviation response parameter; This is the second temperature difference value; These are the corrected static error correction parameters. These are static error correction parameters. These are the correction coefficients for the static error correction parameters; The corrected temperature change trend response parameters, For the response parameters of temperature change trend, This is the correction coefficient for the response parameter to the temperature change trend.

4. The temperature control method for chip aging tests according to claim 3, characterized in that, The current spectral feature data also includes: the peak value of the second harmonic signal; Determining the power adjustment amount of the heating unit includes: Based on the peak amplitude of the second harmonic and the amplitude sampling period, the rate of change corresponding to the peak amplitude of the second harmonic is determined. The power adjustment amount of the heating unit is calculated according to the following formula: ； ； ； in, This refers to the power adjustment amount of the heating unit. This is the third temperature difference value. The sampling period is used to indicate the time interval between temperature data acquisition and power adjustment. Used to indicate the total cumulative amount of static deviation between the chip's case temperature and the target case temperature over time; This is the sequence number of the sampling period. This is the sequence number of the current sampling period. For the first The third temperature difference value, This is the third temperature difference value from the previous sampling period. This is the reference power for the heating unit. Integration corresponding to ambient temperature The final feedforward coefficients, The rate of change corresponding to the peak value of the second harmonic signal; This is a correction factor for the rate of change of the peak value of the second harmonic signal; The half-width at half maximum (FWHM) of the absorption spectral lines Corrected feedforward coefficients; The initial feedforward coefficients corresponding to the ambient temperature. The full width at half maximum (FWHM) of the absorption spectral line The corresponding temperature uniformity coefficient is used to quantify the uniformity of temperature distribution inside the chamber.

5. The temperature control method for chip aging tests according to claim 4, characterized in that, Adjusting the current heating power of the heating unit according to the power adjustment amount includes: Convert the power adjustment amount into digital control commands; The digital control command is sent to the temperature control circuit inside the chip aging test chamber through a preset communication interface, so that the temperature control circuit converts the digital control command into a drive signal and outputs it to the heating unit; wherein, the heating unit continuously adjusts the current heating power according to the drive signal until the chip's shell temperature converges to the preset target shell temperature.

6. The temperature control method for chip aging tests according to claim 5, characterized in that, The current gas temperature includes: the current oxygen temperature; The method of detecting the gas inside the chip aging test chamber based on a preset modulation signal and outputting the current spectral characteristic data and current gas temperature includes: Based on the characteristic absorption spectrum of oxygen, a modulation signal is generated by superimposing a triangular wave scanning signal and a dual-frequency sine wave modulation signal. The laser is driven by the modulation signal to output a synchronous laser beam, which is split into a probe beam and a reference beam by a dual-path beam splitting; wherein, the probe beam is transmitted to the inside of the chip aging test chamber and passes through the oxygen inside the chamber, while the reference beam does not enter the chip aging test chamber. The probe light and the reference light are collected respectively to obtain the probe electrical signal and the reference electrical signal; The detection electrical signal and the reference electrical signal are normalized, harmonics extracted, and feature analyzed in sequence to output the current spectral characteristic data of oxygen and the current gas temperature.

7. A temperature control device suitable for chip aging tests, characterized in that, The device includes: The first temperature acquisition module is used to acquire the current chamber temperature inside the chip aging test chamber and the current shell temperature of the chip inside the chip aging test chamber. The second temperature acquisition module is used to detect the gas inside the chip aging test chamber based on a preset modulation signal, and output the current spectral characteristic data of the gas and the current gas temperature; wherein, the modulation signal is used to detect the gas characteristics of the gas. The parameter correction module is used to calibrate the current gas temperature based on a first temperature difference between the current chamber temperature and the current gas temperature, and the current spectral characteristic data, to generate a calibrated gas temperature, which is then used as the current ambient temperature inside the chip aging test chamber. Based on a second temperature difference between the current ambient temperature and a preset target ambient temperature, the module corrects the heating power adjustment parameters of the heating unit inside the chip aging test chamber, generating corrected heating power adjustment parameters. The heating unit is used to control the outer casing temperature of the chip. The power adjustment generation module is used to determine the power adjustment amount of the heating unit based on the current spectral feature data, the corrected heating power adjustment parameters, the second temperature difference, and the third temperature difference between the current shell temperature and the preset target shell temperature. The heating power adjustment module is used to adjust the current heating power of the heating unit according to the power adjustment amount.

8. The temperature control device for chip aging tests according to claim 7, characterized in that, The heating power adjustment module includes: an instruction conversion unit, a temperature control circuit, and a heating unit; The heating power adjustment module is used to adjust the current heating power of the heating unit according to the power adjustment amount, specifically including: The instruction conversion unit is used to convert the power adjustment amount into a digital control instruction, and send the digital control instruction to the temperature control circuit through a preset communication interface; The temperature control circuit is used to convert the digital control command into a drive signal and output it to the heating unit; The heating unit is used to continuously adjust the current heating power according to the driving signal until the chip's casing temperature converges to the preset target casing temperature.

9. An electronic device, characterized in that, The electronic device includes a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, it implements a temperature control method for chip aging tests as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements a temperature control method suitable for chip aging tests according to any one of claims 1 to 7.

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