An on-chip radio frequency acoustic amplitude modulator and a communication device

Abstract

The application provides an on-chip radio frequency acoustic wave amplitude modulator and a communication device, and belongs to the field of signal processing.The on-chip radio frequency acoustic wave amplitude modulator comprises a signal input end, a first phase shifter, a second phase shifter and a phased transducer array.The first phase shifter and the second phase shifter are connected with the signal output end.The phased transducer array comprises a first phased array and a second phased array.The first phased array is connected with the first phase shifter, and the first phased array comprises a plurality of first array elements.The second phased array is connected with the second phase shifter, and the second phased array comprises a plurality of second array elements.The first array elements and the second array elements are arranged alternately, and the shortest distance between adjacent first array elements and second array elements is (N+1 / 4)λ.The modulator device can keep the miniaturization of the device and significantly improve the modulation efficiency of the wide-band radio frequency signal.

Description

Technical Field

[0001] This invention relates to the field of signal processing, and more particularly to an on-chip radio frequency acoustic amplitude modulator and a communication device. Background Technology

[0002] With the rapid development of high-frequency communication systems, phased array radars, and on-chip multi-channel signal processing technology, the demand for low-power, reconfigurable, and high-bandwidth modulation of radio frequency signals on-chip is becoming increasingly urgent.

[0003] Currently, most modulation devices for radio frequency acoustic wave amplitudes borrow from interferometric modulation methods in integrated photonics, such as using Mach-Zehnder-like interferometer structures. These devices achieve amplitude modulation of the output acoustic signal by introducing a phase difference between the two acoustic wave propagation paths. However, on the one hand, acoustic systems implementing such interferometric structures typically rely on narrow acoustic waveguides to achieve long propagation paths to ensure stable interference conditions. This severely limits the acoustic bandwidth of the amplitude modulation device when modulating high-frequency acoustic waves and introduces significant scattering losses. On the other hand, such interferometric structures require additional coupling and merging structures and are highly sensitive to geometric dimensions and process variations, making it difficult to further reduce device size and increasing device coupling insertion losses, which is detrimental to large-scale integration and consistency control.

[0004] Therefore, it is necessary to design an on-chip radio frequency acoustic amplitude modulator and communication device to solve the above problems. Summary of the Invention

[0005] This invention provides an on-chip radio frequency acoustic wave amplitude modulator and a communication device to solve the technical problems of narrow operating bandwidth, low modulation efficiency and difficulty in miniaturization of existing interferometric acoustic wave modulators.

[0006] The present invention provides an on-chip radio frequency acoustic amplitude modulator and a communication device. The on-chip radio frequency acoustic amplitude modulator includes a signal input terminal, a first phase shifter, a second phase shifter, and a phased transducer array.

[0007] The system includes a signal input terminal for receiving radio frequency (RF) signals; a first phase shifter connected to the signal output terminal, used to adjust the phase of the RF signal and output a first sound wave; a second phase shifter connected to the signal output terminal, used to adjust the phase of the RF signal and output a second sound wave; a phased-array transducer array comprising a first phased array and a second phased array, the first phased array connected to the first phase shifter, the first phased array comprising multiple first array elements, the second phased array connected to the second phase shifter, the second phased array comprising multiple second array elements, the first array elements and the second array elements being staggered, the shortest distance between adjacent first array elements and second array elements being (N+1 / 4)λ, where λ is the wavelength of the RF signal, and N is an integer greater than or equal to 0; the phased-array transducer array having a first signal output terminal and a second signal output terminal along the transmission direction of the received sound wave.

[0008] In one example of the present invention, when there is a 90° phase difference between the second sound wave and the first sound wave, the first signal output terminal outputs an interference constructive sound wave of the first sound wave and the second sound wave, and the second signal output terminal outputs an interference destructive sound wave of the first sound wave and the second sound wave.

[0009] In one example of the present invention, the phased-controlled transducer array includes a first piezoelectric structure, a first phased-controlled electrode, a second phased-controlled electrode, and a ground electrode; the first phased-controlled electrode, the second phased-controlled electrode, and the ground electrode are disposed on the first piezoelectric structure; the first phased-controlled electrode and the ground electrode form a plurality of first array elements, and the second phased-controlled electrode and the ground electrode form a plurality of second array elements; the plurality of first array elements and second array elements are arranged alternately along a first direction, the first direction being the transmission direction of the phased-controlled transducer array receiving sound waves.

[0010] In one example of the present invention, the first phased-array electrode includes a first busbar and a plurality of first interdigital electrodes, the plurality of first interdigital electrodes being connected to the first busbar; the second phased-array electrode includes a second busbar and a plurality of second interdigital electrodes, the plurality of second interdigital electrodes being connected to the second busbar; the first busbar and the second busbar extend along the first direction, the first busbar and the second busbar are disposed opposite to each other, the first interdigital electrodes and the second interdigital electrodes are located between the first busbar and the second busbar, and the first interdigital electrodes and the second interdigital electrodes are arranged alternately along the first direction.

[0011] In one example of the present invention, the ground electrode is located on the side of the first piezoelectric structure on which the first phase control electrode and the second phase control electrode are provided. The ground electrode is located between the first phase control electrode and the second phase control electrode. A plurality of sub-electrodes extend from the ground electrode, and the sub-electrodes extend into the space between adjacent first interdigital electrodes and adjacent second interdigital electrodes.

[0012] In one example of the present invention, the grounding electrode is located on the side of the first piezoelectric structure opposite to the first phase control electrode and the second phase control electrode, and the projections of the first interdigitated electrode and the second interdigitated electrode along the thickness direction of the first piezoelectric structure are located within the grounding electrode.

[0013] In one example of the present invention, the first phase shifter and the second phase shifter are thermoacoustic phase modulators. The thermoacoustic phase modulator includes a second piezoelectric structure, a micro heater, and two single-phase unidirectional transducers. The micro heater is disposed on the second piezoelectric structure. The two single-phase unidirectional transducers are disposed on the second piezoelectric structure and are respectively located on both sides of the micro heater.

[0014] In one example of the present invention, the phased transducer array, the first phase shifter and the second phase shifter are integrated into one unit.

[0015] In one example of the present invention, the frequency of the radio frequency signal is 50MHz~10GHz.

[0016] The present invention also provides a communication device, which includes an on-chip radio frequency acoustic amplitude modulator as described in any of the above examples.

[0017] The on-chip radio frequency acoustic wave amplitude modulator of the present invention uses a first phase shifter and a second phase shifter to perform time phase modulation on the input radio frequency signal to introduce a controllable time phase difference between the output first acoustic wave and the second acoustic wave; at the same time, a reasonable spacing is set between the phased array elements of the phased transducer array so that the first acoustic wave and the second acoustic wave generate a set spatial phase delay when they propagate along the phased transducer array, thereby achieving constructive or destructive interference output of the acoustic waves in a specific propagation direction under the action of controllable time phase difference and fixed spatial phase difference.

[0018] This on-chip RF acoustic amplitude modulator introduces an electrically controlled time phase difference and a fixed spatial phase difference into the RF signal, thereby achieving constructive or destructive interference of sound waves in a specific propagation direction without relying on long acoustic waveguides or traditional interferometer arms. The on-chip RF acoustic amplitude modulator significantly reduces its dependence on the sound wave propagation path length and waveguide geometry, effectively reducing the physical size of the device, eliminating the inherent scattering loss of the MZI interference structure, and possessing excellent modulation frequency scalability based on a spatial array structure design. This significantly improves the modulation efficiency of the RF signal and the acoustic operating bandwidth, achieving effective coverage of a wide operating range from tens of megahertz to tens of gigahertz. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other embodiments based on these drawings without inventive effort.

[0020] In the attached diagram:

[0021] Figure 1 An optical photograph of an on-chip radio frequency acoustic amplitude modulator in one embodiment of the present invention; Figure 2 This is a schematic diagram illustrating the working principle of an on-chip radio frequency acoustic wave amplitude modulator in one embodiment of the present invention; wherein... Figure 2 (a) is a schematic diagram of the principle of the acoustic amplitude modulator modulating the output of the interference constructive acoustic wave. Figure 2 (b) is a schematic diagram of the principle of the acoustic amplitude modulator modulating interference phase cancellation acoustic output; Figure 3 This is a top view of a phased-array transducer array according to an embodiment of the present invention; Figure 4 This is a schematic diagram of an on-chip radio frequency acoustic amplitude modulator containing a single-sided electrode phased transducer array in one embodiment of the present invention. Figure 5 This is a schematic cross-sectional view of a single-sided electrode phase-controlled transducer array according to an embodiment of the present invention. Figure 6 This is a schematic diagram of an on-chip radio frequency acoustic amplitude modulator containing a double-sided electrode phased transducer array in one embodiment of the present invention. Figure 7 This is a schematic cross-sectional view of a double-sided electrode phase-controlled transducer array according to an embodiment of the present invention. Figure 8 This is a schematic cross-sectional view of a double-sided electrode phase-controlled transducer array according to another embodiment of the present invention; Figure 9This is a top view of a thermoacoustic phase modulator in one embodiment of the present invention; Figure 10 This is a schematic cross-sectional view of a thermoacoustic phase modulator in one embodiment of the present invention; Figure 11 In one embodiment of the present invention, the on-chip radio frequency acoustic amplitude modulator outputs S before and after the radio frequency signal is modulated by the first phase shifter. 21 S 31 Schematic diagram of parameter test results; Figure 12 In one embodiment of the present invention, the on-chip radio frequency acoustic amplitude modulator outputs S when a modulation voltage of 0~1.5V is applied to the first phase shifter. 21 S 31 Parameter curve.

[0022] The attached figures are labeled as follows: 100, Signal input terminal; 200, First phase shifter; 300, Second phase shifter; 400, Phased transducer array; 410, First piezoelectric structure; 420, First phased electrode; 421, First busbar; 422, First interdigital electrode; 430, Second phased electrode; 431, Second busbar; 432, Second interdigital electrode; 440, Ground electrode; 441, Sub-electrode; 450, First array element; 460, Second array element; 470, First signal output terminal; 480, Second signal output terminal; 500. Thermoacoustic phase modulator; 510. Second piezoelectric structure; 520. Microheater; 530. Single-phase unidirectional transducer. Detailed Implementation

[0023] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0024] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. The drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0025] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the invention. However, it will be apparent to those skilled in the art that embodiments of the invention may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the invention.

[0026] In the first aspect, please see Figures 1 to 6 This application discloses an on-chip radio frequency acoustic amplitude modulator, which includes a signal input terminal 100, a first phase shifter 200, a second phase shifter 300, and a phased transducer array 400.

[0027] like Figure 1 , Figure 4 and Figure 6 As shown, signal input terminal 100 is used to receive the radio frequency signal to be amplitude modulated. A first phase shifter 200 is connected to the signal output terminal. The first phase shifter 200 converts the received radio frequency signal into a radio frequency sound wave and can controllably adjust the phase of the radio frequency sound wave to output a phase-modulated first sound wave. A second phase shifter 300 is connected to the signal output terminal. The second phase shifter 300 converts the received radio frequency signal into a radio frequency sound wave and can controllably adjust the phase of the radio frequency sound wave to output a phase-modulated second sound wave.

[0028] like Figure 1 , Figure 3 , Figure 4 and Figure 6 As shown, the phased-array transducer 400 includes a first phased-array and a second phased-array. The first phased-array is connected to a first phase shifter 200, and receives a first sound wave, causing the first sound wave to propagate along the first phased-array. The second phased-array is connected to a second phase shifter 300, and receives a second sound wave, causing the second sound wave to propagate along the second phased-array. The first phased-array includes multiple first array elements 450, and the second phased-array includes multiple second array elements 460. The first array elements 450 and the second array elements 460 are arranged alternately along the propagation direction of the received sound wave. The input first and second sound waves propagate in the overlapping area of ​​the first and second phased-arrays to achieve interference modulation between them. The phased transducer array 400 is further provided with a first signal output terminal 470 and a second signal output terminal 480 in the direction of receiving sound waves. The first signal output terminal 470 and the second signal output terminal 480 are located at both ends of the first phased array and the second phased array. The first signal output terminal 470 and the second signal output terminal 480 are used for the output of the sound wave signal after the first sound wave and the second sound wave are interfered and modulated.

[0029] like Figure 2 , Figure 4and Figure 6 As shown, the shortest spacing between adjacent first element 450 and second element 460 on the phased transducer array 400 is (N+1 / 4)λ, where λ is the wavelength of the radio frequency signal and N is an integer greater than or equal to 0. A first acoustic wave is input into the phased transducer array 400 via the first phased array and transmitted, while a second acoustic wave is input into the phased transducer array 400 via the second phased array. Due to the spacing structure between the first element 450 and the second element 460, a 90° spatial phase delay occurs between the first and second acoustic waves during transmission. Based on this, the phased transducer array 400 introduces a 90° spatial phase difference between the first and second acoustic waves transmitted within it.

[0030] like Figure 2 , Figure 4 and Figure 6 As shown, when the on-chip radio frequency acoustic wave amplitude modulator modulates the amplitude of the radio frequency signal, it independently adjusts the phase of the radio frequency signal introduced through the signal input terminal 100 at the first phase shifter 200 and the second phase shifter 300, so that there is a set time phase difference between the first acoustic wave and the second acoustic wave output to the phased transducer array 400. When there is a 90° time phase difference between the first acoustic wave and the second acoustic wave modulated by the phase shifter, the first acoustic wave and the second acoustic wave transmitted to the phased transducer array 400 meet the interference condition under the combined effect of the 90° time phase difference and the 90° spatial phase difference. During the transmission of the first acoustic wave and the second acoustic wave in opposite directions, they respectively form a constructive interference acoustic wave and a destructive interference acoustic wave. The first signal output terminal 470 of the phased transducer array 400 outputs the constructive interference acoustic wave, and the second signal output terminal 480 of the phased transducer array 400 outputs the destructive interference acoustic wave. When the first and second sound waves are transmitted to the first signal output terminal 470, the 90° time phase difference and the 90° spatial phase difference between them cancel each other out, resulting in a 0° phase difference during their transmission in the overlapping space. This satisfies the constructive interference condition, and thus the first signal output terminal 470 outputs a constructive interference sound wave. When the first and second sound waves are transmitted to the second signal output terminal 480, the 90° time phase difference and the 90° spatial phase difference between them are superimposed, resulting in a 180° phase difference during their transmission in the overlapping space. This satisfies the destructive interference condition, and thus the second signal output terminal 480 outputs a destructive interference sound wave. Furthermore, if... Figure 12 As shown, by adjusting the phase difference between the first and second sound waves through the first phase shifter 200 and the second phase shifter 300, the amplitude of the output sound wave signal can be continuously adjusted between interference phase cancellation amplitude and interference phase expansion amplitude.

[0031] For example Figure 2As shown, in one example, for the input radio frequency (RF) signal to be modulated, the first phase shifter 200 converts the RF signal into an RF sound wave and provides 0° phase modulation to generate a first sound wave, which is then output to the phased transducer array 400 via the first phased array. The second phase shifter 300 converts the RF signal into an RF sound wave and provides -90° phase modulation to generate a second sound wave, which is also output to the phased transducer array 400 via the second phased array. Under the effect of the preset distance between the first and second phased arrays, the first sound wave input from the first phased array has a 90° spatial phase difference with the second sound wave input from the second phased array. Therefore, when the first and second sound waves input into the phased transducer array 400 are output to the first signal output terminal 470, the -90° time phase difference and the 90° spatial phase difference between the first and second sound waves are superimposed and canceled out, so as to achieve the sound wave output with constructive interference; when the first and second sound waves input into the phased transducer array 400 are output to the second signal output terminal 480, the -90° time phase difference and the 90° spatial phase difference between the first and second sound waves are accumulated to form a -180° phase difference, so as to achieve the sound wave output with destructive interference.

[0032] The on-chip radio frequency acoustic amplitude modulator in this application can effectively broaden the modulation bandwidth for radio frequency signals by adjusting the shortest distance between adjacent first array elements 450 and second array elements 460 on the phased transducer array 400, achieving effective coverage of a wide operating range from tens of megahertz to tens of gigahertz. For example, in some embodiments, the radio frequency amplitude modulator can modulate radio frequency signals in the range of 50MHz to 10GHz.

[0033] like Figures 3 to 8 As shown, in some embodiments, the phased-array transducer 400 includes a first piezoelectric structure 410, a first phased-array electrode 420, a second phased-array electrode 430, and a ground electrode 440. The first phased-array electrode 420, the second phased-array electrode 430, and the ground electrode 440 are disposed on the first piezoelectric structure 410, with the first phased-array electrode 420 and the second phased-array electrode 430 disposed on the same surface of the first piezoelectric structure 410. On the first piezoelectric structure 410, the first phased-array electrode 420 and the corresponding ground electrode 440 form a first phased-array, and the second phased-array electrode 430 and the corresponding ground electrode 440 form a second phased-array. A plurality of first array elements 450 in the first phased-array and a plurality of second array elements 460 in the second phased-array are arranged alternately along a first direction, which is the transmission direction of the sound waves received by the phased-array transducer array 400.

[0034] like Figures 4 to 8As shown, the first phased-array electrode 420 includes a first busbar 421 and a plurality of first interdigital electrodes 422, which are connected to the first busbar 421. The second phased-array electrode 430 includes a second busbar 431 and a plurality of second interdigital electrodes 432. On the first piezoelectric structure 410, the first busbar 421 and the second busbar 431 are disposed opposite to each other. Both the first busbar 421 and the second busbar 431 extend in the same direction along a first direction. The plurality of first interdigital electrodes 422 connected to the first busbar 421 extend in a second direction, and the plurality of second interdigital electrodes 432 connected to the second busbar 431 extend in a second direction. The plurality of first interdigital electrodes 422 and the second interdigital electrodes 432 are located between the first busbar 421 and the second busbar 431, and the plurality of first interdigital electrodes 422 and the second interdigital electrodes 432 are arranged alternately along the first direction, and the second direction is perpendicular to the first direction. On the first piezoelectric structure 410, a first phased-array electrode 420 and a ground electrode 440 cooperate to form a first phased-array array. A first interdigitated electrode 422 on the first phased-array electrode 420 and a corresponding ground electrode 440 form a first array element 450. A second phased-array electrode 430 and a ground electrode 440 cooperate to form a second phased-array array. A second interdigitated electrode 432 on the second phased-array electrode 430 and a corresponding ground electrode 440 form a second array element 460. Because multiple first interdigitated electrodes 422 and second interdigitated electrodes 432 are staggered along a first direction on the first piezoelectric structure 410, multiple first array elements 450 and second array elements 460 are also staggered along the first direction.

[0035] like Figure 4 and Figure 5 As shown, in some embodiments, the phased transducer array 400 is a single-sided electrode phased modulator. A ground electrode 440, a first phased electrode 420, and a second phased electrode 430 are disposed on the same surface of the first piezoelectric structure 410. The ground electrode 440 is disposed between the first phased electrode 420 and the second phased electrode 430. The ground electrode 440 extends along a first direction in a meandering manner between the first phased electrode 420 and the second phased electrode 430. Multiple sub-electrodes 441 extend from the ground electrode 440. The sub-electrodes 441 extend along a second direction and penetrate between any adjacent first interdigital electrodes 422 and adjacent second interdigital electrodes 432. On the first piezoelectric structure 410, adjacent first interdigital electrodes 422 and the sub-electrodes 441 located between adjacent first interdigital electrodes 422 form a first array element 450, and adjacent second interdigital electrodes 432 and the sub-electrodes 441 located between adjacent second interdigital electrodes 432 form a second array element 460.

[0036] like Figures 6 to 8As shown, in some embodiments, the phased transducer array 400 is a bifacial electrode phased modulator. A first phased electrode 420 and a second phased electrode 430 are disposed on one side surface of the first piezoelectric structure 410, and a ground electrode 440 is disposed on the other side surface of the first piezoelectric structure 410. The projections of the first interdigital electrode 422 and the second interdigital electrode 432 along the thickness direction of the first piezoelectric structure 410 are located within the ground electrode 440. On the first piezoelectric structure 410, the first interdigital electrode 422 and the ground electrode 440 located at the bottom of the first interdigital electrode 422 form a first array element 450, and the second interdigital electrode 432 and the ground electrode 440 located at the bottom of the second interdigital electrode 432 form a second array element 460. For example... Figure 7 As shown, in one example, the ground electrode 440 is disposed on the first piezoelectric structure 410 in a fully covering structure. The entire ground electrode 440 covers the side of the first piezoelectric structure 410 opposite to the first phased-state electrode 420 and the second phased-state electrode 430. The continuous coverage area of ​​the ground electrode 440 completely includes the projections of the first phased-state electrode 420 and the second phased-state electrode 430 onto the other side surface of the first piezoelectric structure 410. For example... Figure 8 As shown, in another example, the ground electrode 440 is disposed on the first piezoelectric structure 410 with a partial covering structure. The ground electrode 440 is disposed on the side of the first piezoelectric structure 410 opposite to the first phase control electrode 420 and the second phase control electrode 430, and the ground electrode 440 and the first interdigital electrode 422 and the second interdigital electrode 432 are projected to coincide on the bottom surface of the first piezoelectric structure 410.

[0037] like Figure 9 and Figure 10 As shown, in some embodiments, the first phase shifter 200 and the second phase shifter 300 are selected as thermoacoustic phase modulators 500. The thermoacoustic phase modulator 500 includes a second piezoelectric structure 510, a microheater 520, and two single-phase unidirectional transducers. The microheater 520 and the two single-phase unidirectional transducers are disposed on the same side surface of the second piezoelectric structure 510. The two single-phase unidirectional transducers are disposed on both sides of the microheater 520 and respectively function as an acoustic wave input and an acoustic wave output. The microheater 520 is used to heat and modulate a preset thermal modulation region on the surface of the second piezoelectric structure 510, raising the thermal modulation region of the second piezoelectric structure 510 to a modulation temperature. The portion of the second piezoelectric structure 510 raised to the modulation temperature will reduce the transmission speed of the acoustic wave propagating along the surface, thereby causing a preset phase delay modulation of the input acoustic wave.

[0038] Furthermore, in some embodiments, both the first piezoelectric structure 410 and the second piezoelectric structure 510 include a substrate and a piezoelectric thin film, with the piezoelectric thin film disposed on the substrate. The substrate can be any base material that meets the growth requirements of the piezoelectric thin film. For example, the substrate can include any one or more combinations of semiconductor materials and insulating materials. When a semiconductor material is selected for the substrate, it can be, for example, single-crystal silicon (Si), single-crystal germanium (Ge), silicon-germanium (SiGe), silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or other III / V compound semiconductors. Besides the semiconductor materials listed above, the substrate can also be Si / SiGe, Si / SiC, silicon-on-insulator (SOI), germanium-on-insulator (GOI), or silicon-germanium-on-insulator (SGOI), etc. When an insulating material is selected for the substrate, the insulating material can be an organic insulator, an inorganic insulator, or a combination thereof. In some embodiments, since the silicon substrate has good thermal conductivity and can serve as the room-temperature thermal boundary of the device, this application uses a silicon substrate as an example for detailed description. The piezoelectric film can be a lithium niobate film, lithium tantalate film, aluminum nitride film, aluminum scandium nitride film, or gallium nitride film tangentially along any crystal axis. For example, the piezoelectric film can be a lithium niobate film with Z-tangential direction (i.e., the surface of the lithium niobate film is perpendicular to the Z-axis direction).

[0039] like Figure 1 As shown, in some embodiments, the phased transducer array 400, the first phase shifter 200, and the second phase shifter 300 can be integrated into one unit, thereby further reducing the device size of the on-chip radio frequency acoustic amplitude modulator. The piezoelectric thin films in the first piezoelectric structure 410 and the second piezoelectric structure 510 use the same piezoelectric material.

[0040] In a second aspect, this application also provides a communication device that includes the on-chip radio frequency acoustic amplitude modulator in any of the above embodiments.

[0041] The technical solution of the present invention will be described in detail below through specific embodiments. Unless otherwise stated, the raw materials and reagents used in the following embodiments are all commercially available products, or can be prepared by conventional methods in the art.

[0042] Example like Figure 1 and Figure 3 As shown, this embodiment provides an on-chip radio frequency acoustic amplitude modulator, which includes a signal input terminal 100, a first phase shifter 200, a second phase shifter 300, and a phased transducer array 400. The first phase shifter 200 and the second phase shifter 300 are connected to the signal input terminal 100, and the phased transducer array 400 is connected to the first phase shifter 200 and the second phase shifter 300.

[0043] The first phase shifter 200 and the second phase shifter 300 are thermoacoustic phase modulators 500. The thermoacoustic phase modulator 500 includes a silicon substrate, a Z-tangential lithium niobate film, a microheater 520, and two single-phase unidirectional transducers. The lithium niobate film is disposed on the silicon substrate and has a thickness of 750 nm. The microheater 520 and the two single-phase unidirectional transducers are disposed on the lithium niobate film. The microheater 520 adopts an aluminum electrode structure. The two single-phase unidirectional transducers are located on both sides of the microheater 520. One single-phase unidirectional transducer is connected to the signal input terminal 100, and the other single-phase unidirectional transducer is connected to the phase-controlled transducer array 400.

[0044] The phased-array transducer 400 employs a one-dimensional single-sided electrode phased-array modulator. The phased-array transducer includes a silicon substrate, a lithium niobate thin film, a first phased-array electrode 420, a second phased-array electrode 430, and a ground electrode 440. The lithium niobate thin film is disposed on the silicon substrate, and its thickness is 750 nm. The first phased-array electrode 420, the second phased-array electrode 430, and the ground electrode 440 are disposed on the lithium niobate thin film. The first phased-array electrode 420 is connected to the first phase shifter 200, and the second phased-array electrode 430 is connected to the second phase shifter 300. The first phased-array electrode 420 and the second phased-array electrode 430 are arranged opposite to each other, such that the first interdigitated electrode 422 of the first phased-array electrode 420 and the second interdigitated electrode 432 of the second phased-array electrode 430 are staggered along a first direction. The ground electrode 440 extends in a meandering manner between the first phased-array electrode 420 and the second phased-array electrode 430. Multiple sub-electrodes 441 on the ground electrode 440 extend into any adjacent first interdigital electrode 422 and adjacent second interdigital electrode 432. Adjacent first interdigital electrodes 422 and the sub-electrodes 441 located between adjacent first interdigital electrodes 422 form a first array element 450. Adjacent second interdigital electrodes 432 and the sub-electrodes 441 located between adjacent second interdigital electrodes 432 form a second array element 460. The shortest distance between adjacent first array elements 450 and second array elements 460 is 2.25λ, where λ is 745 nm.

[0045] The on-chip RF acoustic amplitude modulator in this embodiment was tested for RF signal modulation performance. The test results are as follows: Figure 11 and Figure 12 As shown. Figure 11 This demonstrates the amplitude modulation results of the on-chip RF acoustic wave amplitude modulator for different frequencies of RF signals when the first phase shifter is activated to modulate the RF signal, while the second phase shifter does not modulate the input RF signal. Specifically, the amplitudes of the acoustic wave signals output from the two signal output terminals of the phased-array transducer are measured. 21 and S 31 Parameters. For example... Figure 11As shown, compared to when no heating voltage is applied, applying a 1.1V heating voltage to the first phase shifter will cause a -90° phase difference between the modulated first acoustic wave and the second acoustic wave. The S-wave of the acoustic signal output by the phased-array transducer is measured at this time. 21 and S 31 The parameters produce significant amplitude modulation changes for the 460MHz radio frequency signal, S 21 The parameter is represented by the constructive interference acoustic wave output, S 31 The parameters are represented by the destructive acoustic output.

[0046] Figure 12 This demonstrates the S-wave characteristics of the output acoustic wave from the phased-array transducer at an operating frequency of 460MHz, with the first phase shifter heating voltage ranging from 0V to 1.5V. 21 and S 31 The parameter variation trend and its difference are shown. The test results show that when the heating voltage of the first phase shifter reaches 1.1V, the device achieves an excellent amplitude modulation depth of more than 30dB, which fully verifies the interference modulation effect of the proposed solution on the amplitude of radio frequency signals.

[0047] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. An on-chip radio frequency acoustic amplitude modulator, characterized in that, include: The signal input terminal is used to receive radio frequency signals; A first phase shifter is connected to the signal output terminal. The first phase shifter is used to adjust the phase of the radio frequency signal and output a first sound wave. A second phase shifter is connected to the signal output terminal. The second phase shifter is used to adjust the phase of the radio frequency signal and output a second sound wave. A phased-array transducer array includes a first phased-array and a second phased-array. The first phased-array is connected to a first phase shifter and includes multiple first array elements. The second phased-array is connected to a second phase shifter and includes multiple second array elements. The first array elements and the second array elements are staggered, and the shortest distance between adjacent first array elements and second array elements is (N+1 / 4)λ, where λ is the wavelength of the radio frequency signal and N is an integer greater than or equal to 0. The phased-array transducer array has a first signal output terminal and a second signal output terminal along the transmission direction of the received sound wave.

2. The on-chip radio frequency acoustic amplitude modulator according to claim 1, characterized in that, When there is a 90° phase difference between the second sound wave and the first sound wave, the first signal output terminal outputs the constructive interference sound wave of the first sound wave and the second sound wave, and the second signal output terminal outputs the destructive interference sound wave of the first sound wave and the second sound wave.

3. The on-chip radio frequency acoustic amplitude modulator according to claim 1, characterized in that, The phased-array transducer includes a first piezoelectric structure, a first phased-array electrode, a second phased-array electrode, and a ground electrode; the first phased-array electrode, the second phased-array electrode, and the ground electrode are disposed on the first piezoelectric structure; the first phased-array electrode and the ground electrode form a plurality of first array elements, and the second phased-array electrode and the ground electrode form a plurality of second array elements; the plurality of first array elements and second array elements are arranged alternately along a first direction, which is the transmission direction of the phased-array transducer array receiving sound waves.

4. The on-chip radio frequency acoustic amplitude modulator according to claim 3, characterized in that, The first phased-array electrode includes a first busbar and a plurality of first interdigital electrodes connected to the first busbar. The second phased-array electrode includes a second busbar and a plurality of second interdigital electrodes connected to the second busbar. The first busbar and the second busbar extend along the first direction and are disposed opposite to each other. The first interdigital electrodes and the second interdigital electrodes are located between the first busbar and the second busbar and are arranged alternately along the first direction.

5. The on-chip radio frequency acoustic amplitude modulator according to claim 4, characterized in that, The grounding electrode is located on the side of the first piezoelectric structure on which the first phase control electrode and the second phase control electrode are provided. The grounding electrode is located between the first phase control electrode and the second phase control electrode. Multiple sub-electrodes extend from the grounding electrode, and the sub-electrodes extend into the space between adjacent first interdigital electrodes and adjacent second interdigital electrodes.

6. The on-chip radio frequency acoustic amplitude modulator according to claim 4, characterized in that, The grounding electrode is located on the side of the first piezoelectric structure opposite to the first phase control electrode and the second phase control electrode, and the projections of the first interdigitated electrode and the second interdigitated electrode along the thickness direction of the first piezoelectric structure are located within the grounding electrode.

7. The on-chip radio frequency acoustic amplitude modulator according to claim 1, characterized in that, The first phase shifter and the second phase shifter are thermoacoustic phase modulators. The thermoacoustic phase modulator includes a second piezoelectric structure, a micro heater, and two single-phase unidirectional transducers. The micro heater is disposed on the second piezoelectric structure. The two single-phase unidirectional transducers are disposed on the second piezoelectric structure and are respectively located on both sides of the micro heater.

8. The on-chip radio frequency acoustic amplitude modulator according to claim 1, characterized in that, The phased transducer array, the first phase shifter, and the second phase shifter are integrated into one unit.

9. The on-chip radio frequency acoustic amplitude modulator according to claim 1, characterized in that, The frequency of the radio frequency signal is 50MHz~10GHz.

10. A communication device, characterized in that, The communication device includes an on-chip radio frequency acoustic amplitude modulator as described in any one of claims 1 to 9.

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