Method of manufacturing a semiconductor device

Abstract

The present application provides a method for manufacturing a semiconductor device. The method comprises: providing a substrate and performing an ion implantation process; performing a surface treatment on the implanted substrate to remove free fluorine ions on the surface; and depositing a first dielectric layer on the treated substrate. Preferably, the ion implantation uses boron difluoride and the surface treatment uses hydrogen treatment. The present application effectively removes fluorine ions remaining on the surface of the polysilicon resistor due to high dose implantation by adding a surface treatment step before depositing the dielectric layer, thereby blocking the generation of subsequent silicon tetrafluoride gas and inhibiting film peeling defects generated in the manufacture of low resistance polysilicon resistors. The method eliminates the risk of "bump", avoids resistance value drift and machine contamination, significantly increases the process window, and improves product yield.

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