Preparation method of interface-regulated infrared LED

Abstract

The application relates to the technical field of infrared LED manufacturing, and discloses a preparation method of an interface-regulated infrared LED, which comprises the following steps: step one, preparing a graphene base layer: plating an infrared emission material on the graphene base to form an infrared emission unit; step two, arranging and plating: designing a photonic crystal structure, and arranging and plating the infrared emission unit according to the crystal structure; step three, embedding the infrared emission unit and a wire into a groove of an infrared LED base to form a semi-finished product LED; and sintering and recrystallizing the prepared semi-finished product LED to form a finished product LED. According to the application, the infrared emission unit of the infrared LED is arranged and plated according to certain rules, and the infrared emission unit is fixed by rolling and pouring processes, so that the light-emitting wavelength of the infrared LED can be regulated, the photoelectric conversion efficiency of the infrared LED is improved, the manufacturing process of the infrared LED is simplified, and the large-scale application of the infrared LED is promoted.

Description

Technical Field

[0001] This invention relates to the field of infrared LED manufacturing technology, and specifically to a method for preparing an interface-controlled infrared LED. Background Technology

[0002] Infrared light possesses advantages such as strong penetration, significant thermal effect, high sensitivity, rapid response, and applicability to various environments and distances. These advantages enable infrared light to play a vital role in multiple fields, including military, medical, information communication, autonomous driving, and machine vision. Infrared therapy, with its non-invasive nature, high safety, ease of operation, and flexible adjustment, has become an important treatment method in the field of modern physiotherapy. It can not only relieve pain and improve function but also promote rehabilitation and enhance quality of life, providing an effective physiotherapy option for many patients.

[0003] The current manufacturing methods for infrared LEDs have the following drawbacks: (1) Low luminous efficiency: Compared with visible light LEDs, the luminous efficiency of infrared LEDs is generally lower. This is because the photon energy in the infrared band is relatively low, and the energy conversion efficiency is not high during the process of electron and hole recombination to generate photons in semiconductor materials. (2) The composition and structure of semiconductor materials must be precisely controlled during the manufacturing process to obtain accurate infrared emission wavelengths. (3) The manufacturing process of infrared LEDs is relatively complex, which increases the difficulty and cost of the manufacturing process, making the production cost of infrared LEDs relatively high and limiting their widespread application. (4) Infrared LEDs generate a certain amount of heat during operation. Insufficient thermal management and heat dissipation design lead to a decline in the performance of infrared LEDs or even damage. (5) Temperature is not easy to control precisely, color rendering is poor, and high-power infrared LEDs have low efficiency. However, in actual production, due to factors such as the purity of raw materials, the precision of production equipment, and fluctuations in process parameters, the emission wavelength of infrared LEDs may have a certain deviation, affecting their performance in specific application scenarios.

[0004] Therefore, there is an urgent need for a low-cost, efficient infrared LED manufacturing method with good thermal management and high photoelectric conversion efficiency to address the shortcomings of traditional infrared LED manufacturing. Summary of the Invention

[0005] The present invention aims to provide a method for preparing an interface-controlled infrared LED to solve the problems of high cost, low heat dissipation, deviation in infrared emission wavelength, and low photoelectric conversion efficiency in the traditional infrared LED manufacturing process.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a method for preparing an interface-controlled infrared LED, comprising the following steps:

[0007] Step 1: Preparation of graphene substrate: Infrared emitting material is deposited onto the graphene substrate to form infrared emitting units;

[0008] Step 2, Arrangement and Coating: Design the photonic crystal structure and arrange the infrared emitting units according to the crystal structure for coating;

[0009] Step 3: Embed the infrared emitting unit and wires into the groove of the infrared LED substrate to form a semi-finished LED; sinter and recrystallize the prepared semi-finished LED to form the finished LED product.

[0010] Preferably, as an improvement, in step two, the infrared emitting units are arranged in a striped cross pattern, a giant tooth cross pattern, or a circular cross pattern on the horizontal interface.

[0011] Preferably, as an improvement, in step three, the infrared LED consists of a heat sink, a substrate, leads, an infrared emitting unit, and a cover plate.

[0012] Preferably, as an improvement, the substrate material is at least one of high-temperature resistant insulating board, mica sheet, and quartz sheet.

[0013] Preferably, as an improvement, in step three, a groove is provided in the middle part of the base, and a metal sheet is fixed to the top of the groove.

[0014] Preferably, as an improvement, in step three, the infrared emitting unit is embedded into the groove of the infrared LED substrate by at least one of the following processes: rolling, pressing, and casting.

[0015] Preferably, as an improvement, in step three, the infrared emitting unit is embedded into the substrate by a combination of rolling and casting processes.

[0016] Preferably, as an improvement, step four is also included: connecting the infrared LED to the circuit and testing it.

[0017] Preferably, as an improvement, when an infrared LED is connected to the circuit, the frame supporting the LED is a hexagonal hollow frame, a hexagonal support frame, a distributed frame, or a planar frame.

[0018] Preferably, as an improvement, in step four, when connecting the infrared LED to the circuit, a series and / or parallel circuit connection method is adopted.

[0019] The principle and advantages of this solution are as follows: This invention introduces an electric field uniformly into the infrared emitting unit (light-emitting unit) of the infrared LED through interface control. The infrared LED can achieve precise control of the infrared wavelength; the infrared LED support frame can withstand the heat radiation generated by the infrared emitting unit for a long time, and the micro fan in the center of the frame can dissipate heat in a timely manner. The frame design does not affect the infrared radiation of the infrared emitting unit, and can also fix the infrared emitting unit tightly to the frame plate, avoiding damage to the infrared emitting unit due to long-term operation. At the same time, the infrared LED manufacturing method provided by this invention has low cost, which helps to promote the large-scale application of infrared LEDs. Attached Figure Description

[0020] Figure 1 Flowchart for infrared LED manufacturing.

[0021] Figure 2 This is a diagram showing the electric field distribution of infrared LEDs with different structures.

[0022] Figure 3 It is a square photonic crystal structure for infrared LEDs.

[0023] Figure 4 Triangular and hexagonal photonic crystal structures and their band structures for infrared LEDs.

[0024] Figure 5 The figures show the current-voltage characteristic curve and power-temperature curve of the infrared LED.

[0025] Figure 6 This is a circuit connection diagram for an infrared LED. Detailed Implementation

[0026] The following detailed description provides further details on specific embodiments, but the embodiments of the present invention are not limited thereto. Unless otherwise specified, the technical means used in the following embodiments are conventional means well known to those skilled in the art; the experimental methods used are all conventional methods; and the materials and reagents used are all commercially available.

[0027] Overview of the plan:

[0028] A method for fabricating an interface-controlled infrared LED includes the following steps:

[0029] Step 1: Preparation of graphene substrate: Infrared emitting material is deposited onto the graphene substrate to form infrared emitting units;

[0030] Step 2, Arrangement and Coating: Design the photonic crystal structure and arrange and coat the infrared emitting units according to the crystal structure; the infrared emitting units are arranged in a striped cross arrangement, a giant tooth cross arrangement, or a circular cross arrangement on the horizontal interface; in this embodiment, the infrared emitting units are fabricated using a striped cross arrangement; the striped cross arrangement can not only effectively introduce the electric field uniformly into the infrared emitting unit and enhance the luminous efficiency of the infrared material, but also arrange two medium materials with different refractive indices at a certain width according to the infrared wavelength to be controlled, effectively shielding unwanted infrared wavelengths, so that the infrared LED can achieve point-to-point control of the emission wavelength.

[0031] Step 3, Assembly: Embed the infrared emitting unit and wires into the groove of the infrared LED substrate to form a semi-finished LED; put the prepared semi-finished LED into a muffle furnace for sintering and recrystallization, cool after crystallization, and pour high-temperature resistant insulating glue around the infrared emitting unit to make the infrared emitting unit firmly bonded to the substrate to form the finished LED.

[0032] In this embodiment, the infrared LED consists of a heat sink, a substrate, leads, an infrared emitting unit, and a cover plate. The substrate is at least one of a high-temperature resistant insulating board, a mica sheet, and a quartz sheet. In this embodiment, the substrate material is a high-temperature resistant insulating board (high-temperature resistant epoxy board), with a rectangular groove formed in the middle for embedding the infrared emitting unit. A metal sheet is fixed to the top of the substrate groove, which effectively suppresses the protrusion and breakage of the infrared emitting unit material in a high-temperature environment. After the LED is formed, a heat sink is installed at the bottom of the substrate, the top metal sheet is removed, and an insulating high-temperature resistant cover plate is used for encapsulation and fixation.

[0033] The infrared emitting unit is embedded into the groove of the infrared LED substrate by at least one of the following processes: rolling, pressing, and casting. In this embodiment, a combination of rolling and casting is preferred to embed the infrared emitting unit into the substrate. Rolling can uniformly embed the material into the substrate, while combining it with casting can more tightly fix the luminescent material inside the substrate.

[0034] Step 4: Connect the infrared LEDs to the circuit and test. When connecting the infrared LEDs to the circuit, the frame supporting the LEDs can be a hexagonal hollow frame, a hexagonal support frame, a distributed frame, or a planar frame. Preferably, this embodiment uses a hexagonal support frame. The hexagonal support frame can integrate a large number of infrared emitting units in a smaller volume, helping to reduce the overall frame size. Furthermore, the hexagonal support frame design can integrate large-area infrared emitting units, resulting in higher structural stability and a significant power increase. The infrared LEDs are connected in a certain topology, using different series and parallel connection methods for different application scenarios. Preferably, this embodiment uses a combination of series and parallel circuit connections, with multiple LEDs connected in series as one path, and multiple paths connected in parallel according to power requirements as the input circuit for testing.

[0035] Example 1

[0036] like Figure 1 As shown, a method for fabricating an interface-controlled infrared LED mainly consists of three parts: fabricating a graphene substrate, depositing a film on the infrared emitting units according to a certain arrangement rule, and assembling the infrared emitting units with a high-temperature resistant substrate and a heat sink. Specifically, it includes the following steps:

[0037] Step 1: Preparation of graphene substrate: Infrared emitting material is deposited onto the graphene substrate to form an infrared emitting unit; the graphene substrate can increase the conductivity of infrared LEDs, thereby improving the infrared luminous efficiency.

[0038] Step 2, Arrangement and Coating: Design the photonic crystal structure and arrange and coat the infrared emitting units according to the crystal structure; in this embodiment, the infrared emitting units are fabricated using a striped cross-arrangement layout; the striped cross-arrangement layout can not only effectively introduce the electric field uniformly into the infrared emitting unit and enhance the luminous efficiency of the infrared material, but also arrange two medium materials with different refractive indices at a certain width according to the infrared wavelength to be controlled, effectively shielding unwanted infrared wavelengths, so that the infrared LED can achieve point-to-point control of the emission wavelength.

[0039] Step 3: Assembly: The infrared LED consists of a heat sink, substrate, leads, infrared emitting unit, and cover plate. A rectangular groove is made in the middle of the high-temperature resistant insulating board (high-temperature epoxy board). The infrared emitting unit material and wires are embedded into the substrate using a roll forming process. The semi-finished product is placed in a muffle furnace for sintering and crystallization. The metal sheet fixed to the top of the substrate groove effectively inhibits the protrusion and breakage of the infrared emitting unit material in the high-temperature environment. The crystallized LED is removed from the muffle furnace and cooled. High-temperature resistant insulating adhesive is poured around the infrared emitting unit to ensure a firm bond between the infrared emitting unit and the substrate, improving the working stability of the infrared LED. A heat sink is installed at the bottom of the substrate, the top metal sheet is removed, and an insulating high-temperature resistant cover plate is used for encapsulation and fixation.

[0040] Experimental Example 1

[0041] The light-emitting unit (i.e., the infrared emitting unit) is deposited onto the graphene substrate according to a certain shape and rules. Figure 2 (a) shows a schematic diagram of the striped cross-arrangement structure and a simulation diagram of the electric field distribution obtained using Comsol finite element method. The electric field distribution inside each column of light-emitting units is uniform, which is conducive to the efficient excitation of infrared light. Figure 2 (b) shows a schematic diagram of the circular interlocking arrangement and an electric field simulation diagram. The electric field distribution is inversely proportional to the distance between the light-emitting unit and the center of the circle. The light-emitting units of the outermost circle will weaken and disappear as the distance from the center of the circle increases. Figure 2 (c) shows a schematic diagram of the giant tooth cross-arrangement structure and an electric field simulation diagram. The electric field inside the light-emitting unit is smaller at the tooth tip and the electric field intensity is highest at the connection of two teeth, resulting in uneven infrared emission.

[0042] Experiment Example 2

[0043] Figure 3 The image shows a photonic crystal structure (a) with an infrared LED arranged in a square periodic structure, and its band structure diagram (b). The band structure diagram was obtained using the Comsol finite element method. The image shows that when electromagnetic waves with input frequencies of 0.2–1.4e14 Hz (corresponding to wavelengths of 2–15 μm) are emitted, this photonic crystal structure forms bandgaps in the 2.9–3.7 μm and 15 μm bands. Electromagnetic waves within these two bands cannot be effectively emitted, while electromagnetic waves in other bands can be emitted. Furthermore, by changing the ratio of the two media in the square photonic crystal, wavelengths in specific bands can be shielded, effectively achieving targeted modulation of the infrared wavelength.

[0044] Experimental Example 3

[0045] Figure 4 The infrared LEDs were arranged in a triangle ( Figure 4 a) and hexagons ( Figure 4 (b) Photonic crystal structures with periodic arrangements and their band structures. The figures show that both triangular and hexagonal periodic photonic crystal structures possess the same irreducible Brillouin zone. When inputting electromagnetic waves with frequencies ranging from 0.2 to 1.4e14 Hz (corresponding to wavelengths of 2 to 15 μm), the triangular photonic crystal structure forms a bandgap in the 2.3–2.5 μm band, while the hexagonal photonic crystal structure forms a bandgap in the 2.1–2.3 μm band. Electromagnetic waves in other wavelength ranges can be emitted. Furthermore, by changing the proportions of different media in these two types of photonic crystals, wavelengths in specific bands can also be shielded, effectively achieving targeted modulation of infrared wavelengths. Therefore, this invention can achieve shielding and modulation of specific ranges of infrared wavelengths by using different types of periodic photonic crystal structures.

[0046] Experiment Example 4

[0047] Based on Example 1, infrared LEDs are applied to the circuit, and the frame body adopts a polyhedral frame. Figure 5 The figures show the current-voltage characteristic curve (a) obtained by testing the transmitting unit of this invention using a DH1766 current source, and the power-temperature curve (b) obtained by using a handheld infrared thermal imager in conjunction with the DH1766 current source. As can be seen from the figures, the resistivity of the transmitting unit has strong stability, and the temperature of the transmitting unit increases linearly with increasing power. Figure 6 As shown, when connecting infrared LEDs to the circuit, the LEDs are first connected in series as one path, and then different numbers of LEDs are connected in parallel according to the power requirements. The polyhedral frames are connected by angle-adjustable brackets, and a miniature fan is placed at the center of the frame for heat dissipation.

[0048] The above descriptions are merely embodiments of the present invention, and common knowledge such as specific technical solutions and / or characteristics are not described in detail here. It should be noted that those skilled in the art can make various modifications and improvements without departing from the technical solutions of the present invention, and these should also be considered within the scope of protection of the present invention. These modifications and improvements will not affect the effectiveness of the implementation of the present invention or the practicality of the patent. The scope of protection claimed in this application should be determined by the content of its claims, and the specific embodiments described in the specification can be used to interpret the content of the claims.

Claims

1. A method for fabricating an interface-controlled infrared LED, characterized in that, Includes the following steps: Step 1: Preparation of graphene substrate: Infrared emitting material is deposited onto the graphene substrate to form infrared emitting units; Step 2, Arrangement and Coating: Design the photonic crystal structure and arrange the infrared emitting units according to the crystal structure for coating; Step 3: Embed the infrared emitting unit and wires into the groove of the infrared LED substrate to form a semi-finished LED; sinter and recrystallize the prepared semi-finished LED to form the finished LED product.

2. The method for preparing an interface-controlled infrared LED according to claim 1, characterized in that: In step two, the infrared emitting units are arranged in a striped cross pattern, a giant tooth cross pattern, or a circular cross pattern on the horizontal interface.

3. The method for preparing an interface-controlled infrared LED according to claim 2, characterized in that: In step three, the infrared LED consists of a heat sink, a substrate, leads, an infrared emitting unit, and a cover plate.

4. The method for preparing an interface-controlled infrared LED according to claim 3, characterized in that: The substrate is made of at least one of the following materials: high-temperature resistant insulating board, mica sheet, and quartz sheet.

5. The method for preparing an interface-controlled infrared LED according to claim 4, characterized in that: In step three, a groove is provided in the middle part of the base, and a metal sheet is fixed to the top of the groove.

6. The method for preparing an interface-controlled infrared LED according to claim 5, characterized in that: In step three, the infrared emitting unit is embedded into the groove of the infrared LED substrate by at least one of the following processes: rolling, pressing, and casting.

7. The method for preparing an interface-controlled infrared LED according to claim 6, characterized in that: In step three, the infrared emitting unit is embedded into the substrate using a combination of rolling and casting processes.

8. The method for preparing an interface-controlled infrared LED according to claim 7, characterized in that: It also includes step four: connecting the infrared LED to the circuit and testing it.

9. The method for preparing an interface-controlled infrared LED according to claim 8, characterized in that: When an infrared LED is connected to a circuit, the frame supporting the LED can be a hexagonal hollow frame, a hexagonal support frame, a distributed frame, or a planar frame.

10. The method for preparing an interface-controlled infrared LED according to claim 9, characterized in that: In step four, when connecting the infrared LED to the circuit, a series and / or parallel circuit connection method is used.

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