Micro-led micro display chip and preparation method

Abstract

The application relates to the technical field of display chips, and discloses a Micro-LED micro display chip and a preparation method thereof. The micro display chip comprises a driving substrate, a light-emitting structure and a grid network. The light-emitting structure comprises a plurality of LED mesa. The plurality of LED mesa are arranged on the driving substrate at intervals. Each LED mesa is driven by the driving substrate independently. The grid network comprises a plurality of metal dielectric rings. The plurality of metal dielectric rings are independently arranged on part of the LED mesa, so that the part of the LED mesa is surrounded by the metal dielectric rings. The resin support material in the traditional structure is removed by simplifying the arrangement mode of the metal dielectric ring, the utilization rate of the pixel light-emitting area is improved, the brightness of the chip is improved, and the service life of the chip is improved.

Description

Technical Field

[0001] This application relates to the field of display chip technology, specifically to a Micro-LED microdisplay chip and its fabrication method. Background Technology

[0002] Micro-LED microdisplay chips, also known as miniature light-emitting diodes, integrate arrayed micron-sized LED light-emitting units onto an active addressable driver substrate to achieve individual control and illumination, thereby outputting displayed images. Full-color microdisplays have a wide range of applications, especially near-eye displays (including AR, VR, etc.).

[0003] In quantum dot and / or phosphor pink conversion-type Micro-LED microdisplay chips, to achieve effective isolation between different colors and avoid light crosstalk, traditional structures typically employ a design where a metal dielectric ring is wrapped around the color conversion material, and the metal dielectric ring is supported by a resin support material. However, traditional structures have the following drawbacks: Aging of resin support materials. Traditional structures require resin support materials for support. These materials are susceptible to aging due to factors such as light radiation and temperature changes, leading to decreased stability of the metal dielectric ring and affecting the chip's lifespan and reliability.

[0004] Low utilization rate of pixel light-emitting area. In traditional structures, each LED mesa requires an independent metal dielectric ring, which severely compresses the effective light-emitting area within the pixel region. In addition, the resin support material also occupies a certain amount of pixel area space, resulting in insufficient utilization of the light-emitting area in traditional structures and reducing chip brightness.

[0005] The process is highly complex. Traditional structures require complex process steps, resulting in significant yield losses during the process.

[0006] Therefore, there is an urgent need to propose a microdisplay chip structure and fabrication method that can increase the light-emitting area, extend the service life, and reduce the process complexity without light crosstalk. Summary of the Invention

[0007] To address the aforementioned issues, this application provides a Micro-LED microdisplay chip and its fabrication method. By optimizing the chip's structural design, eliminating the resin support material in traditional structures, and simplifying the arrangement of the metal dielectric rings in the grid network, the utilization rate of the pixel light-emitting area is improved, thereby enhancing the chip's brightness while ensuring no crosstalk between different colors. Simultaneously, by simplifying the process steps, the complexity and production cost are reduced, leading to improved chip yield.

[0008] The technical solution adopted in this application is as follows: In a first aspect, a Micro-LED microdisplay chip is provided, comprising: a driving substrate, a light-emitting structure, and a grid network; The light-emitting structure includes multiple LED mesa surfaces, which are arranged at intervals on the driving substrate, and each LED mesa surface is driven individually by the driving substrate. The grid network includes multiple metal dielectric rings, each of which is independently and correspondingly disposed on a portion of the LED mesa, so that the portion of the LED mesa is surrounded by the metal dielectric rings.

[0009] Optionally, multiple metal dielectric rings are arranged in a skip-interval manner so that the two diagonally opposite LED platforms in the 2×2 unit are respectively surrounded by metal dielectric rings.

[0010] Optionally, the lateral dimension of the LED tabletop ranges from 0.5 to 10 μm, the lateral inner dimension of the metal dielectric ring ranges from 1.0 to 10.5 μm, and the lateral inner dimension of the metal dielectric ring is larger than the lateral dimension of the LED tabletop, and the wall thickness of the metal dielectric ring is 0.1 to 0.5 μm.

[0011] Optional features also include: color conversion structure; The color conversion structure includes multiple color conversion units, which fill the areas not surrounded by multiple metal dielectric rings and within the multiple metal dielectric rings.

[0012] Optionally, the thickness of the color conversion unit can range from 2 to 5 μm.

[0013] Optionally, the color conversion unit includes: a first color conversion unit and a second color conversion unit; The first form: The first color conversion unit fills the area not surrounded by multiple metal dielectric rings, and is used to convert the light emitted by the corresponding LED platform into the first color; the second color conversion unit fills part of the metal dielectric rings, and is used to convert the light emitted by the corresponding LED platform into the second color; Alternatively, in the second form: the first color conversion unit fills a portion of the metal dielectric rings to convert the light emitted by the corresponding LED platform into a first color; the second color conversion unit fills the area not surrounded by the plurality of metal dielectric rings to convert the light emitted by the corresponding LED platform into a second color; Alternatively, in a third form: the first color conversion unit fills a portion of the metal dielectric ring and is used to convert the light emitted by the corresponding LED platform into a first color; the second color conversion unit fills the remaining portion of the metal dielectric ring and is used to convert the light emitted by the corresponding LED platform into a second color.

[0014] Optionally, the color conversion unit may also include: a third color conversion unit; In the first and second forms, the third color conversion unit is filled in the remaining part of the metal dielectric ring and is used to convert the light emitted by the corresponding LED mesa into the third color. Alternatively, in the third form, a third color conversion unit fills the area not surrounded by multiple metal dielectric rings, used to convert the light emitted by the corresponding LED platform into a third color.

[0015] Optionally, the color conversion unit may also include: a transparent resin unit; In the first and second forms, the transparent resin unit is filled inside the remaining metal dielectric ring to transmit the light emitted by the corresponding LED platform. Alternatively, in the third form, transparent resin units fill the areas not surrounded by multiple metal dielectric rings to transmit light emitted from the corresponding LED platform.

[0016] Optionally, the materials for the first color conversion unit, the second color conversion unit, and the third color conversion unit include quantum dots and / or phosphors.

[0017] Secondly, a method for fabricating a Micro-LED microdisplay chip is provided, comprising the following steps: Provide driving substrate; A light-emitting structure is formed, which includes multiple LED mesa, which are arranged at intervals on a driving substrate, and each LED mesa is driven individually by the driving substrate. A grid network is formed, which includes multiple metal dielectric rings. Each of the multiple metal dielectric rings is independently and correspondingly arranged on a portion of the LED platform, so that the portion of the LED platform is surrounded by the metal dielectric rings.

[0018] Optionally, the following steps may also be included: A color conversion structure is formed, which includes multiple color conversion units, which fill the areas not surrounded by multiple metal dielectric rings and within the multiple metal dielectric rings.

[0019] Optionally, forming a grid network includes: Individual photoresist residues are formed on some LED surfaces; Sputtering a metal dielectric layer, and then removing part of the metal dielectric layer by vertical etching, so that metal dielectric rings are formed around the photoresist residue; Remove the photoresist residue.

[0020] Optionally, forming a grid network includes: Photoresist spots are formed on multiple LED platforms in a skip-interval manner, so that two photoresist spots are formed on two diagonally opposite LED platforms in a 2×2 unit; Sputtering a metal dielectric layer, and then removing part of the metal dielectric layer by vertical etching, so that metal dielectric rings are formed around the photoresist residue; Remove the photoresist residue.

[0021] Optionally, a color conversion structure is formed, including: The first form: fill the area not enclosed by the metal dielectric ring with the first color conversion unit, and fill the part of the metal dielectric ring with the second color conversion unit; Alternatively, in the second form, a first color conversion unit is filled within a portion of the metal dielectric ring, and a second color conversion unit is filled in the area not enclosed by the metal dielectric ring. Alternatively, a third form may be used: a first color conversion unit is filled in a portion of the metal dielectric rings, and a second color conversion unit is filled in the remaining metal dielectric rings.

[0022] Optionally, the color conversion structure may also include: In the first and second forms, a third color conversion unit is filled within the remaining portion of the metal dielectric ring; Alternatively, in the third form, a third color conversion unit is filled in the area not surrounded by multiple metal dielectric rings.

[0023] Optionally, the color conversion structure may also include: In the first and second forms, the remaining portion of the metal dielectric ring is filled with transparent resin units; Alternatively, in the third form, transparent resin units are filled in the area not surrounded by multiple metal dielectric rings.

[0024] Optionally, forming a raster network and a color conversion structure includes: Independent display points are created on certain sections of the LED display surface; among them... The first form: a first color conversion unit is reserved in the first sub-section of a portion of the LED platform, and a second color conversion unit is reserved in the remaining sub-section of the portion of the LED platform; Alternatively, in the second form: a second color conversion unit is formed in the first sub-section of a portion of the LED platform, and a third color conversion unit is formed in the remaining sub-section of the portion of the LED platform; Or a third form: a third color conversion unit is reserved in the first sub-part of a portion of the LED platform, and a first color conversion unit is reserved in the remaining sub-part of the portion of the LED platform; A metal dielectric layer is sputtered, and part of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first form: the third color conversion unit is filled in the area not surrounded by multiple metal dielectric rings; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by multiple metal dielectric rings; Alternatively, in a third form: fill the area not enclosed by multiple metal dielectric rings with a second color conversion unit.

[0025] Optionally, forming a raster network and a color conversion structure includes: Independent reference points are created on multiple LED platforms using a skip-interval method; among them... In a 2×2 unit, a first color conversion unit is formed on one diagonally opposite LED platform, and a second color conversion unit is formed on the other diagonally opposite LED platform in the same 2×2 unit. Alternatively, in the second form: a second color conversion unit is formed on one of the LED platforms diagonally opposite in the 2×2 unit, and a third color conversion unit is formed on the other LED platform diagonally opposite in the 2×2 unit; Alternatively, a third form is proposed: a first color conversion unit is formed on one of the LED platforms diagonally opposite each other in the 2×2 unit, and a third color conversion unit is formed on the other LED platform diagonally opposite each other in the 2×2 unit. A metal dielectric layer is sputtered, and part of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first form: the third color conversion unit is filled in the area not surrounded by multiple metal dielectric rings; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in a third form: a second color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings.

[0026] Optionally, forming a raster network and a color conversion structure includes: Independent display points are created on certain sections of the LED display surface; among them... The first form: a first color conversion unit is formed in the first sub-part of a portion of the LED platform, and a transparent resin unit is formed in the remaining sub-part of the portion of the LED platform; Or the second form: a second color conversion unit is formed in the first sub-part of a portion of the LED platform, and a transparent resin unit is formed in the remaining sub-part of the portion of the LED platform; Or a third form: a first color conversion unit is formed in the first sub-section of a portion of the LED platform, and a second color conversion unit is formed in the remaining sub-section of the portion of the LED platform; A metal dielectric layer is sputtered, and part of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first form: the area not surrounded by multiple metal dielectric rings is filled with a second color conversion unit; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by multiple metal dielectric rings; Alternatively, in a third form: transparent resin units are filled in the area not surrounded by multiple metal dielectric rings.

[0027] Optionally, forming a raster network and a color conversion structure includes: Independent reference points are created on multiple LED platforms using a skip-interval method; among them... A first color conversion unit is formed on one diagonally opposite LED platform in the 2×2 unit, and a transparent resin unit is formed on the other diagonally opposite LED platform in the 2×2 unit. Alternatively, in the second form: a second color conversion unit is formed on one of the LED platforms diagonally opposite in the 2×2 unit, and a transparent resin unit is formed on the other LED platform diagonally opposite in the 2×2 unit; Or a third form: a first color conversion unit point is formed on one of the LED platforms diagonally opposite in the 2×2 unit, and a second color conversion unit point is formed on the other LED platform diagonally opposite in the 2×2 unit; A metal dielectric layer is sputtered, and part of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first form: the area not surrounded by multiple metal dielectric rings is filled with a second color conversion unit; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in a third form: transparent resin units are filled in the areas not surrounded by the plurality of said metal dielectric rings.

[0028] The above-mentioned technical solution adopted in this application can achieve the following beneficial effects: The chip provided in this application includes: a driving substrate, a light-emitting structure, and a grid network; the light-emitting structure includes multiple LED mesa, which are arranged at intervals on the driving substrate, and each LED mesa is driven individually by the driving substrate; the grid network includes multiple metal dielectric rings, which are independently and correspondingly disposed on a portion of the LED mesa, so that the portion of the LED mesa is surrounded by the metal dielectric rings.

[0029] The Micro-LED microdisplay chip proposed in this application arranges metal dielectric rings by independently corresponding to some LED mesa, which reduces the number of metal dielectric rings and reduces the light-blocking metal between adjacent LED mesa to one layer, greatly utilizing the light-emitting area and increasing the light-emitting area by 20-50% compared with the traditional structure, thereby improving the display brightness.

[0030] The Micro-LED microdisplay chip proposed in this application eliminates the resin support material, thereby freeing up a large amount of pixel area space. At the same time, it avoids the impact of resin support material aging on chip performance and significantly improves the chip's lifespan.

[0031] The Micro-LED microdisplay chip proposed in this application reduces complex process steps and lowers production costs compared to traditional structures, thereby improving the product yield of the chip. Attached Figure Description

[0032] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 A top view showing a conventional microdisplay chip structure; Figure 2 A schematic diagram of a conventional microdisplay chip with an AA cross-section is shown. Figure 3 A top view of a Micro-LED microdisplay chip according to an embodiment of this application is shown; Figure 4 A schematic BB cross-sectional view of a Micro-LED microdisplay chip according to an embodiment of this application is shown; Figure 5 A rendering of the metal dielectric ring of a Micro-LED microdisplay chip according to an embodiment of this application is shown. Figure 6 A flowchart illustrating a method for fabricating a Micro-LED microdisplay chip according to an embodiment of this application is shown; Figure 7 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the first embodiment of this application after the formation of the light-emitting structure is shown. Figure 8 A schematic cross-sectional view of a Micro-LED microdisplay chip according to a first embodiment of this application after photoresist dots have been formed; Figure 9 A schematic cross-sectional view of the Micro-LED microdisplay chip after the formation of the metal dielectric layer according to the first embodiment of this application is shown. Figure 10 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the first embodiment of this application after the formation of the metal dielectric ring is shown. Figure 11 A schematic cross-sectional view of a Micro-LED microdisplay chip according to a first embodiment of this application after removing photoresist residue is shown. Figure 12 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the first embodiment of this application after forming a color conversion structure is shown. Figure 13 A top view of a Micro-LED microdisplay chip according to a first embodiment of this application after forming a color conversion structure is shown; Figure 14 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the second embodiment of this application after forming a color conversion structure is shown. Figure 15 A top view of a Micro-LED microdisplay chip according to a second embodiment of this application after forming a color conversion structure is shown; Figure 16 A cross-sectional view of the Micro-LED microdisplay chip according to the third embodiment of this application after forming a color conversion structure is shown. Figure 17 A top view of the Micro-LED microdisplay chip according to the third embodiment of this application after forming a color conversion structure is shown; Figure 18 A cross-sectional view of the Micro-LED microdisplay chip according to the fourth embodiment of this application after forming a color conversion structure is shown. Figure 19 A top view of the Micro-LED microdisplay chip according to the fourth embodiment of this application after forming a color conversion structure is shown; Figure 20 A cross-sectional view of the Micro-LED microdisplay chip according to the fifth embodiment of this application after forming a color conversion structure is shown. Figure 21 A top view of the Micro-LED microdisplay chip according to the fifth embodiment of this application after forming a color conversion structure is shown; Figure 22 A cross-sectional view of the Micro-LED microdisplay chip according to the sixth embodiment of this application after forming a color conversion structure is shown. Figure 23 A top view of the Micro-LED microdisplay chip according to the sixth embodiment of this application after forming a color conversion structure is shown; Figure 24A schematic cross-sectional view of the Micro-LED microdisplay chip after the formation of the dot is shown according to the seventh embodiment of this application; Figure 25 This diagram shows a cross-sectional structure of a Micro-LED microdisplay chip according to the seventh embodiment of this application after the formation of a metal dielectric layer; Figure 26 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the seventh embodiment of this application after the formation of the metal dielectric ring is shown. Figure 27 A cross-sectional view of the Micro-LED microdisplay chip according to the seventh embodiment of this application after forming a color conversion structure is shown. Figure 28 A top view of the Micro-LED microdisplay chip according to the seventh embodiment of this application after forming a color conversion structure is shown; Figure 29 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the eighth embodiment of this application after forming a color conversion structure is shown. Figure 30 A top view of the Micro-LED microdisplay chip according to the eighth embodiment of this application after forming a color conversion structure is shown; Figure 31 A cross-sectional view of the Micro-LED microdisplay chip according to the ninth embodiment of this application after forming a color conversion structure is shown. Figure 32 A top view of the Micro-LED microdisplay chip according to the ninth embodiment of this application after forming a color conversion structure is shown; Figure 33 A cross-sectional view of the Micro-LED microdisplay chip according to the tenth embodiment of this application after forming a color conversion structure is shown. Figure 34 A top view of the Micro-LED microdisplay chip according to the tenth embodiment of this application after forming a color conversion structure is shown; Figure 35 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the eleventh embodiment of this application after forming a color conversion structure is shown. Figure 36 A top view of the Micro-LED microdisplay chip according to the eleventh embodiment of this application after forming a color conversion structure is shown; Figure 37 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the twelfth embodiment of this application after forming a color conversion structure is shown. Figure 38A top view is shown of the Micro-LED microdisplay chip according to the twelfth embodiment of this application after the color conversion structure has been formed. Detailed Implementation

[0033] Exemplary embodiments of this application will now be described in more detail. However, it should be understood that this application may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of this application and to fully convey the scope of this application to those skilled in the art.

[0034] This invention discloses many different embodiments or examples for implementing different structures of the invention. To simplify the disclosure, specific examples of components and arrangements are described herein. These are merely examples and are not intended to limit the invention. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this invention, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0035] Generally, terms can be understood at least in part according to their usage in accordance with the invention. For example, the term "one or more" as used in this invention, depending at least in part on the invention, can be used to describe any component, structure, or feature in the singular, or in the plural to describe a combination of components, structures, or features. Similarly, terms such as "a," "an," or "the" can also be understood, depending at least in part on the invention, to convey either a singular or a plural usage. Furthermore, the term "based on..." can be understood not necessarily to convey an exclusive set of factors, but can instead, at least in part on the context, allow for additional factors that do not necessarily have to be explicitly described.

[0036] It should be noted that, in the description of this application, the terms “on,” “above,” “on top of,” “above,” etc., should be interpreted in the broadest sense, meaning that a description containing these terms is interpreted as “a component may be disposed on another component in direct contact, or there may be an intermediate component or layer between the components.”

[0037] For ease of description, this application may also use spatial relative terms such as “under,” “below,” “below,” “below,” “upper,” and “lower” to describe the relationship between one component and another component shown in the accompanying drawings. In addition to the orientations described in the drawings, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways, and the spatial relative descriptions used in this application can be interpreted accordingly.

[0038] Figure 1 A top view of a microdisplay chip with a conventional structure is shown. Figure 2 A schematic diagram of the AA cross-sectional structure of a conventional microdisplay chip is shown. (Refer to...) Figures 1-2 As shown, a microdisplay chip with a traditional structure is explained.

[0039] In a conventional microdisplay chip, a light-emitting structure 2' is formed on a driving substrate 1'. The light-emitting structure 2' may include multiple LED mesas, which are arranged at intervals on the driving substrate 1', and each LED mesas is individually driven by the driving substrate 1'. The structural description of the driving substrate 1' and the light-emitting structure 2' will be described in detail later.

[0040] In order to achieve effective isolation of different colors and avoid light crosstalk, the traditional structure sets an independent metal dielectric ring 31' for each LED platform and supports the metal dielectric ring 31' with resin support material 5'.

[0041] Within each metal dielectric ring 31', color conversion units are filled to form a color conversion structure 4'. When the LED mesa does not emit blue light, a first color conversion unit is filled in a portion of the metal dielectric ring 31' to convert the light emitted by the corresponding LED mesa into a first color (e.g., green); a second color conversion unit is filled in a portion of the metal dielectric ring 31' to convert the light emitted by the corresponding LED mesa into a second color (e.g., red); and a third color conversion unit is filled in the remaining portion of the metal dielectric ring 31' to convert the light emitted by the corresponding LED mesa into a third color (e.g., blue). Each pixel unit corresponds to at least one LED mesa filled with a first color conversion unit, one LED mesa filled with a second color conversion unit, and one LED mesa filled with a third color conversion unit, thus achieving full-color display.

[0042] However, the traditional structure has the following drawbacks: First, the traditional structure requires a resin support material 5' to support the metal dielectric ring 31'. However, the resin support material 5' is susceptible to aging due to factors such as light radiation and temperature changes, which leads to a decrease in the stability of the metal dielectric ring 31' and affects the chip's lifespan and reliability.

[0043] Secondly, because each LED mesa has an independent metal dielectric ring 31', there are two light-blocking metal layers between adjacent LED mesas. However, in practice, only one light-blocking metal layer is needed between adjacent LED mesas. The redundant light-blocking metal layers severely compress the effective light-emitting area within the pixel region. In addition, the resin support material 5' in the traditional structure also occupies a certain amount of pixel region space as a support structure, further compressing the effective light-emitting area. This results in insufficient utilization of the light-emitting area in the traditional structure, reducing the brightness of the chip.

[0044] In addition, traditional structures require complex process steps, resulting in significant yield losses during the process.

[0045] To address the shortcomings of traditional structures, this application proposes a Micro-LED microdisplay chip to overcome the problems associated with traditional structures.

[0046] Figure 3 A top view of the Micro-LED microdisplay chip proposed in this application is shown. Figure 4 A schematic diagram of the BB cross-sectional structure of the Micro-LED microdisplay chip proposed in this application is shown. (Refer to...) Figures 3-4 The Micro-LED microdisplay chip proposed in this application is illustrated below.

[0047] The Micro-LED microdisplay chip proposed in this application includes: a driving substrate 1, a light-emitting structure 2, and a grid network 3.

[0048] The light-emitting structure 2 includes multiple LED mesa 21, which are arranged at intervals on the driving substrate 1, and each LED mesa 21 is driven individually by the driving substrate 1.

[0049] The grid network 3 includes multiple metal dielectric rings 31, each of which is independently and correspondingly disposed on a portion of the LED mesa 21, so that the portion of the LED mesa 21 is surrounded by the metal dielectric rings 31.

[0050] The driving substrate 1 of the Micro-LED microdisplay chip proposed in this application can be the same as the driving substrate 1' of a conventional structure, and the light-emitting structure 2 of the Micro-LED microdisplay chip proposed in this application can be the same as the light-emitting structure 2' of a conventional structure. The driving substrate 1 and the light-emitting structure 2 will be described in detail below.

[0051] The driving substrate 1 may include a substrate 11, a driving circuit, and multiple contacts connected to the driving circuit (the multiple contacts may include a first contact 12 and a second contact 13). The driving substrate 1 may be provided with a circuit layer including a silicon-based CMOS (Complementary Metal Oxide Semiconductor) backplane, a TFT glass substrate, or a thin-film field-effect transistor, etc., to form the driving circuit. The material of the substrate 11 may include semiconductor materials such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, cobalt phosphide, etc.; it may also include non-conductive materials such as glass, plastic, sapphire wafers, etc.

[0052] Multiple LED mesa 21 can be arranged on the driving substrate 1 in a regular or irregular manner. The driving substrate 1 can refer to the control panel of the multiple LED mesa 21. The driving substrate 1 generates driving signals based on the image to be displayed and applies them to the multiple LED mesa 21, so that each LED mesa 21 independently releases a light beam in response to the driving signals.

[0053] The LED display panel 21 can be a miniature light-emitting diode (LED) or a miniature organic light-emitting diode (OLED). The miniature LED is formed based on inorganic semiconductor materials, such as gallium nitride, aluminum gallium nitride, gallium arsenide, and aluminum gallium indium phosphide. The miniature OLED is formed based on organic materials, such as small molecules, polymers, and phosphorescent materials.

[0054] Each LED platform 21 can be trapezoidal in shape. That is, the sidewalls of the LED platform 21 can be sloping, and the angle between the sidewalls and the top surface of the LED platform 21 can be obtuse, thereby improving the light-focusing effect of the LED platform 21. Of course, the LED platform 21 can also be columnar, in which case the angle between the sidewalls and the top surface of the LED platform 21 is a right angle.

[0055] The Micro-LED microdisplay chip can be a common cathode structure, a common anode structure, or each chip can be independent. Figure 4 In the case shown, the Micro-LED microdisplay chip has a common cathode structure.

[0056] Specifically, each LED mesa 21 may include a first electrode layer 211, a bonding layer 212 disposed on the first electrode layer 211, and an epitaxial layer 213 disposed on the bonding layer 212. Multiple LED mesa 21 are respectively connected to multiple first contacts 12 (anode contacts) of the driving substrate 1. Passivation layers 22 are disposed on the sidewalls of the first electrode layer 211, the bonding layer 212, and the epitaxial layer 213. A transparent electrode layer 23 covers the multiple LED mesa 21, the passivation layer 22, and the driving substrate 1. The transparent electrode layer 23 is connected to the epitaxial layer 213 of each LED mesa 21 and to the second contacts 13 (cathode contacts) of the driving substrate 1. In this case, the multiple LED mesa 21 form a common cathode structure through a common cathode—the transparent electrode layer 23.

[0057] For an LED platform 21, its first electrode layer 211 is connected to a first contact 12 of the driving substrate 1. A bonding layer 212 is disposed on the first electrode layer 211. The material of the first electrode layer 211 can be a metal or a metal alloy, including indium tin oxide, chromium, platinum, gold, aluminum, germanium, tin, indium, copper, or titanium, etc.

[0058] An epitaxial layer 213 is disposed on the bonding layer 212. The epitaxial layer 213 may include a first doped semiconductor layer, a light-emitting layer, and a second doped semiconductor layer stacked together. The first doped semiconductor layer may be a p-type GaN or InGaN layer formed by doping or ion implantation, etc., and the first doped semiconductor layer may be a multilayer structure. The second doped semiconductor layer may be an n-type GaN or InGaN layer formed by doping or ion implantation, etc., and the second doped semiconductor layer may also be a multilayer structure. The light-emitting layer is a layer that outputs light of a specific wavelength based on the recombination of holes provided by the first doped semiconductor layer and electrons provided by the second doped semiconductor layer. The light-emitting layer may have a single quantum well structure or a multiple quantum well (MQW) structure, and may also have well layers and barrier layers stacked alternately.

[0059] The passivation layer 22 covers the sidewalls of the first electrode layer 211, the bonding layer 212, and the epitaxial layer 213. The material of the passivation layer 22 may include inorganic or organic materials. Inorganic materials may include, but are not limited to, any one or a combination of silicon dioxide, aluminum oxide, zirconium dioxide, titanium dioxide, silicon nitride, and hafnium oxide; organic materials include any one or a combination of black matrix photoresist, color filter photoresist, polyimide, bank adhesive, overcoat adhesive, near-ultraviolet negative photoresist, and styrene.

[0060] A transparent electrode layer 23 is covered on multiple LED mesa 21, passivation layer 22, and driving substrate 1. The transparent electrode layer 23 is connected to the epitaxial layer 213 of each LED mesa 21 and to the second contact 13 of the driving substrate 1. The transparent electrode layer 23 can be a conductive and highly transparent thin film material, which may include: indium tin compound, conductive SiO2, conductive PI, molybdenum, silver, etc.

[0061] The light-emitting structure 2 has a grid network 3, which includes multiple metal dielectric rings 31. According to the arrangement of the multiple LED mesa 21, the multiple metal dielectric rings 31 are independently and correspondingly disposed on a portion of the LED mesa 21.

[0062] In some alternative embodiments, the plurality of metallic dielectric rings 31 are arranged in a skip-interval manner. That is, refer to... Figure 3 As shown, in a 2×2 unit, two diagonally opposite LED platforms 21 are each surrounded by a metal dielectric ring 31.

[0063] In practice, the arrangement of the metal dielectric rings 31 is not limited to a 2×2 unit. They can also be arranged in a 3×3 unit, with each of the three diagonal LED mesa 21 surrounded by a metal dielectric ring 31; or in a 4×4 unit, with each of the four diagonal LED mesa 21 surrounded by a metal dielectric ring 31. In more extended cases, the arrangement of the metal dielectric rings 31 can be irregular, as long as they are distributed to a portion of the LED mesa 21. In other words, the core function of the grid network 3 is to divide the multiple LED mesa 21 into a portion surrounded by the metal dielectric rings 31 and another portion not surrounded by them.

[0064] In some optional embodiments, a color conversion structure 4 is also included. The color conversion structure 4 includes a plurality of color conversion units that fill the areas not surrounded by the plurality of metal dielectric rings 31 and within the plurality of metal dielectric rings 31.

[0065] Color conversion units are filled in each metal dielectric ring 31 and in areas not surrounded by multiple metal dielectric rings 31 to form a color conversion structure 4.

[0066] In some alternative implementations, when the LED tabletop 21 does not emit blue light, refer to Figures 3-4As shown, a first color conversion unit 41 is filled in the area not surrounded by multiple metal dielectric rings 31 to convert the light emitted by the corresponding LED mesa 21 into a first color (e.g., green); a second color conversion unit 42 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED mesa 21 into a second color (e.g., red); and a third color conversion unit 44 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED mesa 21 into a third color (e.g., blue).

[0067] In some alternative embodiments, when the LED platform 21 does not emit blue light, a second color conversion unit 42 is filled in the area not surrounded by the plurality of metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); a third color conversion unit 44 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a third color (e.g., blue); and a first color conversion unit 41 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green).

[0068] In some alternative embodiments, when the LED platform 21 does not emit blue light, a third color conversion unit 44 is filled in the area not surrounded by the plurality of metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a third color (e.g., blue); a first color conversion unit 41 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); and a second color conversion unit 42 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red).

[0069] In some alternative embodiments, when the LED platform 21 emits blue light, a first color conversion unit 41 is filled in the area not surrounded by the plurality of metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); a second color conversion unit 42 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); and a transparent resin unit 43 is filled in the remaining part of the metal dielectric rings 31 to directly transmit the light emitted by the corresponding LED platform 21 (blue light).

[0070] In some alternative embodiments, when the LED platform 21 emits blue light, a second color conversion unit 42 is filled in the area not surrounded by the plurality of metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); a transparent resin unit 43 is filled in part of the metal dielectric rings 31 to directly transmit the light emitted by the corresponding LED platform 21 (blue light); and a first color conversion unit 41 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green).

[0071] In some alternative embodiments, when the LED platform 21 emits blue light, transparent resin units 43 are filled in the areas not surrounded by the multiple metal dielectric rings 31, thereby directly transmitting the light (blue light) emitted by the corresponding LED platform 21; a first color conversion unit 41 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); and a second color conversion unit 42 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red).

[0072] Through the above-described implementation methods, when a pixel unit corresponds to at least one LED platform 21 corresponding to the first color conversion unit 41, one LED platform 21 corresponding to the second color conversion unit 42, and one LED platform 21 corresponding to the third color conversion unit 44, or when a pixel unit corresponds to at least one LED platform 21 corresponding to the first color conversion unit 41, one LED platform 21 corresponding to the second color conversion unit 42, and one LED platform 21 corresponding to the transparent resin unit 43, full-color display of the Micro-LED microdisplay chip can be achieved.

[0073] The first color conversion unit 41, the second color conversion unit 42, and the third color conversion unit 44 can all be photoluminescent color conversion materials, which may include quantum dots and / or phosphors. The phosphors may be yttrium aluminum garnet, cerium phosphors, (oxy)nitride phosphors, silicate phosphors, and Mn4+ activated fluoride phosphors, etc. The quantum dots may include one or more combinations of CdSe, CdS, CdZnSe, CdZnS, CdZnSeS, ZnSeS, ZnSe, CuInS, CuInSe, InP, InZnP, and perovskite quantum dots, etc.

[0074] The material of the transparent resin unit 43 can be polymethyl methacrylate (PMMA).

[0075] For the Micro-LED microdisplay chip proposed in this application, the lateral dimension of each LED mesa 21 ranges from 0.5 to 10 μm. The lateral inner dimension of the metal dielectric ring 31 ranges from 1.0 to 10.5 μm, and the lateral inner dimension of the metal dielectric ring 31 is larger than the lateral dimension of the LED mesa 21 (for example, the lateral inner dimension of the metal dielectric ring 31 is about 0.5 μm larger than the lateral dimension of the LED mesa 21 it surrounds).

[0076] The size of the metal dielectric ring 31 must match the size of the LED tabletop 21 to ensure that the metal dielectric ring 31 can completely surround the LED tabletop 21 and prevent the light emitted by the LED tabletop 21 from leaking into adjacent areas.

[0077] The wall thickness of the metal dielectric ring 31 is 0.1~0.5μm. This wall thickness ensures that the metal dielectric ring 31 has sufficient structural strength and reflectivity to achieve effective optical blocking, while also reducing the space occupied by the metal dielectric ring 31.

[0078] The metal dielectric ring 31 can be made of a highly reflective metal material to achieve light reflection, thereby preventing cross-color light.

[0079] The thickness of the color conversion unit ranges from 2 to 5 μm. This thickness ensures that the color conversion unit can fully absorb the light emitted by the LED mesa 21 and convert it into the target color, while avoiding light scattering loss and manufacturing difficulties caused by excessive thickness.

[0080] The metal dielectric ring 31 can be a circular ring or a ring of other shapes. For example, the cross-section of the metal dielectric ring 31 can be a square, such as... Figure 5 As shown.

[0081] Figure 6 A schematic flowchart illustrating a method for fabricating a Micro-LED microdisplay chip according to an embodiment of this application is shown. (Refer to...) Figure 6 The preparation method proposed in this application includes the following steps: Step S1, provide driving substrate 1; Step S2: Forming a light-emitting structure 2, which includes multiple LED mesa 21. The multiple LED mesa 21 are arranged at intervals on the driving substrate 1, and each LED mesa 21 is driven individually by the driving substrate 1.

[0082] Step S3: Forming a grid network 3, which includes multiple metal dielectric rings 31. Each of the multiple metal dielectric rings 31 is independently and correspondingly disposed on a portion of the LED platform 21, so that the portion of the LED platform 21 is surrounded by the metal dielectric rings 31.

[0083] In some alternative implementations, the following steps are also included: Step S4: Forming a color conversion structure 4, which includes multiple color conversion units, which fill the areas not surrounded by multiple metal dielectric rings 31 and within the multiple metal dielectric rings 31.

[0084] In some alternative implementations, forming the grid network 3 includes: Independent photoresist spots 5 are formed on some of the LED platform 21; Sputtering a metal dielectric layer 31-a, and removing part of the metal dielectric layer 31-a by vertical etching, so that metal dielectric rings 31 are formed around the photoresist residue 5 respectively; Remove photoresist, leaving 5 spots.

[0085] The following example illustrates the fabrication method of a Micro-LED microdisplay chip, using a configuration where multiple metal dielectric rings 31 are arranged in a skip-interval manner so that two diagonally opposite LED mesa 21 in a 2×2 unit are respectively surrounded by the metal dielectric rings 31.

[0086] Figures 7-13 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the first embodiment is shown. See also Figures 7-13 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0087] Figure 7 A schematic cross-sectional view of the structure after forming multiple light-emitting structures 2 is shown. See also some embodiments of this application. Figure 7 Forming a light-emitting structure 2, comprising: A substrate is provided, an epitaxial material is grown on the substrate, and a first bonding material is grown on the epitaxial material.

[0088] A driving substrate 1 is provided. The driving substrate 1 may be provided with a circuit layer including a silicon-based CMOS backplane, a TFT glass substrate, or a thin-film field-effect transistor, etc., to form a driving circuit. The driving substrate 1 also includes a plurality of contacts connected to the driving circuit. The plurality of contacts include a plurality of first contacts 12 and second contacts 13. A first electrode material and a second bonding material are grown on the driving substrate 1.

[0089] The epitaxial material, the first bonding material, the first electrode material, and the second bonding material can be formed by deposition.

[0090] The first and second bonding materials are metallically bonded together, and the substrate is then peeled off from the epitaxial material. Substrate peeling methods include, but are not limited to, laser peeling, dry etching, wet etching, and mechanical polishing.

[0091] Thinning operations are performed on epitaxial materials, including dry etching, wet etching, or mechanical polishing.

[0092] Based on the MESA pattern designed using a patterned mask, the epitaxial material is etched, followed by the etching of the bonding material and the first electrode material. The etched epitaxial material forms multiple epitaxial layers 213, the etched bonding material forms multiple bonding layers 212, and the etched first electrode material forms multiple first electrode layers 211. Each first electrode layer 211 is connected to each first contact 12, each bonding layer 212 is located on each first electrode layer 211, and each epitaxial layer 213 is located on each bonding layer 212. Etching can be performed using either dry or wet methods.

[0093] Passivation layers 22 are deposited on the side surfaces of multiple epitaxial layers 213, multiple bonding layers 212, and multiple first electrode layers 211 to form multiple LED mesa 21. Transparent electrode material is deposited on the multiple LED mesa 21 and the driving substrate 1 to form a transparent electrode layer 23. The transparent electrode layer 23 connects each epitaxial layer 213 and a second contact 13, thereby forming a light-emitting structure 2.

[0094] Figure 8 A schematic cross-sectional view of the structure after the formation of photoresist residue point 5 is shown. See also some embodiments of this application. Figure 8 Forming photoresist spots 5 includes: creating patterned spots on the LED platform 21 using photoresist in a skip-interval manner, so that the two diagonally opposite LED platforms 21 in the 2×2 unit each have photoresist spots 5.

[0095] Figure 9 A schematic cross-sectional view of the structure after the formation of the metallic dielectric layer 31-a is shown. See also some embodiments of this application. Figure 9 Forming a metal dielectric layer 31-a includes: preparing the metal dielectric layer 31-a by sputtering.

[0096] Figure 10 A schematic cross-sectional view of the structure after the metal dielectric ring 31 is formed is shown. See also some embodiments of this application. Figure 10 The process of forming a metal dielectric ring 31 includes: removing part of the metal dielectric layer 31-a by vertical etching to form metal dielectric rings 31 around the photoresist residue 5.

[0097] Figure 11 A schematic cross-sectional view of the structure after removing photoresist residue point 5 is shown. See also some embodiments of this application. Figure 11 The removal of photoresist residue 5 includes: removing photoresist residue 5 in the metal dielectric ring 31 by wet chemical cleaning.

[0098] Figure 12 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 13A top view is shown after the color conversion structure 4 has been formed. See also Figures 12-13 , Figure 12 The cross-section shown is Figure 13 The CC section in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising: filling a first color conversion unit 41 in a region not surrounded by the metal dielectric ring 31, filling a second color conversion unit 42 in a portion of the metal dielectric ring 31, and filling a third color conversion unit 44 in the remaining portion of the metal dielectric ring 31.

[0099] When the LED platform 21 does not emit blue light (e.g., UV LED), a first color conversion unit 41 is filled in the area not surrounded by multiple metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); a second color conversion unit 42 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); and a third color conversion unit 44 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a third color (e.g., blue).

[0100] Figures 7-11 and Figures 14-15 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the second embodiment is shown. See also Figures 7-11 and Figures 14-15 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0101] The second embodiment removes the photoresist residue 5 and the preceding steps are the same as in the first embodiment, and will not be repeated here.

[0102] Figure 14 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 15 A top view is shown after the color conversion structure 4 has been formed. See also Figures 14-15 , Figure 14 The cross-section shown is Figure 15 The DD cross-section in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising: filling a second color conversion unit 42 in a region not surrounded by the metal dielectric ring 31, filling a third color conversion unit 44 in a portion of the metal dielectric ring 31, and filling a first color conversion unit 41 in the remaining portion of the metal dielectric ring 31.

[0103] When the LED platform 21 does not emit blue light (e.g., UV LED), a second color conversion unit 42 is filled in the area not surrounded by multiple metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); a third color conversion unit 44 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a third color (e.g., blue); and a first color conversion unit 41 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green).

[0104] Figures 7-11 and Figures 16-17 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the third embodiment is shown. See also Figures 7-11 and Figures 16-17 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0105] The third embodiment removes the photoresist residue 5 and the preceding steps are the same as in the first embodiment, and will not be repeated here.

[0106] Figure 16 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 17 A top view is shown after the color conversion structure 4 has been formed. See also Figures 16-17 , Figure 16 The cross-section shown is Figure 17 The EE cross-section in the application. In some embodiments of this application, a color conversion structure 4 is formed, including: filling a third color conversion unit 44 in a region not surrounded by the metal dielectric ring 31, filling a first color conversion unit 41 in a portion of the metal dielectric ring 31, and filling a second color conversion unit 42 in the remaining portion of the metal dielectric ring 31.

[0107] When the LED platform 21 does not emit blue light (e.g., UV LED), a third color conversion unit 44 is filled in the area not surrounded by multiple metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a third color (e.g., blue); a first color conversion unit 41 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); and a second color conversion unit 41 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red).

[0108] Figures 7-11 and Figures 18-19 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the fourth embodiment is shown. See also Figures 7-11 and Figures 18 to 19The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0109] The steps for removing the photoresist residue 5 and preceding steps in the fourth embodiment are the same as in the first embodiment, and will not be repeated here.

[0110] Figure 18 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 19 A top view is shown after the color conversion structure 4 has been formed. See also Figures 18-19 , Figure 18 The cross-section shown is Figure 19 The FF cross-section in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising: filling a first color conversion unit 41 in a region not surrounded by the metal dielectric ring 31, filling a second color conversion unit 42 in a portion of the metal dielectric ring 31, and filling a transparent resin unit 43 in the remaining portion of the metal dielectric ring 31.

[0111] When the LED platform 21 emits blue light (e.g., BlueLED), a first color conversion unit 41 is filled in the area not surrounded by multiple metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); a second color conversion unit 42 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); and a transparent resin unit 43 is filled in the remaining part of the metal dielectric rings 31 to directly transmit the light emitted by the corresponding LED platform 21 (blue light).

[0112] Figures 7-11 and Figures 20-21 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the fifth embodiment is shown. See also Figures 7-11 and Figures 20 to 21 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0113] The steps for removing the photoresist residue 5 and preceding steps in the fifth embodiment are the same as in the first embodiment, and will not be repeated here.

[0114] Figure 20 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 21 A top view is shown after the color conversion structure 4 has been formed. See also Figures 20-21 , Figure 20 The cross-section shown is Figure 21The GG cross-section in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising: filling a second color conversion unit 42 in a region not surrounded by the metal dielectric ring 31, filling a transparent resin unit 43 in a portion of the metal dielectric ring 31, and filling a first color conversion unit 41 in the remaining portion of the metal dielectric ring 31.

[0115] When the LED platform 21 emits blue light (e.g., BlueLED), a second color conversion unit 42 is filled in the area not surrounded by multiple metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); a transparent resin unit 43 is filled in part of the metal dielectric rings 31 to directly transmit the light emitted by the corresponding LED platform 21 (blue light); and a first color conversion unit 41 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green).

[0116] Figures 7-11 and Figures 22-23 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the sixth embodiment is shown. See also Figures 7-11 and Figures 22 to 23 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0117] The steps for removing the photoresist residue 5 and preceding steps in the sixth embodiment are the same as in the first embodiment, and will not be repeated here.

[0118] Figure 22 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 23 A top view is shown after the color conversion structure 4 has been formed. See also Figures 22-23 , Figure 22 The cross-section shown is Figure 23 The HH cross-section in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising: filling a region not surrounded by a metal dielectric ring 31 with a transparent resin unit 43, filling a portion of the metal dielectric ring 31 with a first color conversion unit 41, and filling the remaining portion of the metal dielectric ring 31 with a second color conversion unit 42.

[0119] When the LED platform 21 emits blue light (e.g., BlueLED), transparent resin units 43 are filled in the areas not surrounded by multiple metal dielectric rings 31, thereby directly transmitting the light (blue light) emitted by the corresponding LED platform 21; a first color conversion unit 41 is filled in part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); and a second color conversion unit 42 is filled in the remaining part of the metal dielectric rings 31 to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red).

[0120] In some alternative implementations, forming a raster network 3 and forming a color conversion structure includes: Independent spots are formed on some LED tabletops 21; among them... The first form: a first color conversion unit is reserved in the first sub-part of the partial LED platform 21, and a second color conversion unit is reserved in the remaining sub-part of the partial LED platform 21; Or the second form: a second color conversion unit 42 is formed in the first sub-part of the partial LED platform 21, and a third color conversion unit is formed in the remaining sub-part of the partial LED platform; Or a third form: a third color conversion unit is reserved in the first sub-part of a portion of the LED platform 21, and a first color conversion unit is reserved in the remaining sub-part of the portion of the LED platform; Sputtering a metal dielectric layer 31-a, and then removing part of the metal dielectric layer 31-a by vertical etching, so that metal dielectric rings 31 are formed around the remaining point; In the first form: the area not surrounded by multiple metal dielectric rings 31 is filled with a third color conversion unit 44; Or in the second form: the first color conversion unit 41 is filled in the area not surrounded by the multiple metal dielectric rings 31; Alternatively, in a third form: the area not enclosed by the multiple metal dielectric rings 31 is filled with a second color conversion unit 42.

[0121] The following example illustrates the fabrication method of a Micro-LED microdisplay chip, using a configuration where multiple metal dielectric rings 31 are arranged in a skip-interval manner so that two diagonally opposite LED mesa 21 in a 2×2 unit are respectively surrounded by the metal dielectric rings 31.

[0122] Figure 7 , Figures 24-28 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the seventh embodiment is shown. See also Figure 7 , Figures 24-28The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0123] The steps for forming the light-emitting structure 2 in the seventh embodiment are the same as those in the first embodiment, and will not be repeated here.

[0124] Figure 24 A schematic cross-sectional view of the structure after the retention point is formed is shown. See also some embodiments of this application. Figure 24 The process of forming a reserved point includes: forming reserved points on multiple LED platforms 21 in a skip interval manner; wherein, a second color conversion unit reserved point is formed on one diagonally opposite LED platform 21 in the 2×2 unit, and a third color conversion unit reserved point is formed on another diagonally opposite LED platform 21 in the 2×2 unit.

[0125] Figure 25 A schematic cross-sectional view of the structure after the formation of the metallic dielectric layer 31-a is shown. See also some embodiments of this application. Figure 25 Forming a metal dielectric layer 31-a includes: preparing the metal dielectric layer 31-a by sputtering.

[0126] Figure 26 A schematic cross-sectional view of the structure after the metal dielectric ring 31 is formed is shown. See also some embodiments of this application. Figure 26 The process of forming a metal dielectric ring 31 includes: removing a portion of the metal dielectric layer 31-a by vertical etching to form a metal dielectric ring 31 around the reserved points of the second color conversion unit and the reserved points of the third color conversion unit, respectively.

[0127] Figure 27 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 28 A top view is shown after the color conversion structure 4 has been formed. See also Figures 27-28 , Figure 27 The cross-section shown is Figure 28 Section II in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising filling a first color conversion unit 41 in a region not surrounded by a metal dielectric ring 31.

[0128] When the LED platform 21 does not emit blue light (e.g., UV LED), the area not surrounded by multiple metal dielectric rings 31 is filled with a first color conversion unit 41, which is used to convert the light emitted by the corresponding LED platform 21 into a first color (e.g., green); a second color conversion unit 42 is reserved, which is used to convert the light emitted by the corresponding LED platform 21 into a second color (e.g., red); and a third color conversion unit 44 is reserved, which is used to convert the light emitted by the corresponding LED platform 21 into a third color (e.g., blue).

[0129] Figures 29-32The diagram shows a cross-sectional view and a top view of the Micro-LED microdisplay chip after the color conversion structure 4 has been formed, according to embodiments eight through nine. The difference between embodiments eight through nine and embodiment seven lies in the arrangement of the color conversion units. Further details are omitted.

[0130] In some alternative implementations, forming a raster network 3 and forming a color conversion structure includes: Independent spots are formed on some LED tabletops 21; among them... The first form: a first color conversion unit is formed in the first sub-part of the partial LED platform 21, and a transparent resin unit is formed in the remaining sub-part of the partial LED platform 21; Or the second form: a second color conversion unit is formed in the first sub-part of the partial LED platform 21, and a transparent resin unit is formed in the remaining sub-part of the partial LED platform 21; Or a third form: a first color conversion unit is formed in the first sub-part of the partial LED platform 21, and a second color conversion unit is formed in the remaining sub-part of the partial LED platform 21; Sputtering a metal dielectric layer 31-a, and then removing part of the metal dielectric layer 31-a by vertical etching, so that metal dielectric rings 31 are formed around the remaining point; In the first form: the area not surrounded by the multiple metal dielectric rings 31 is filled with the second color conversion unit 42; Or in the second form: the first color conversion unit 41 is filled in the area not surrounded by the multiple metal dielectric rings 31; Alternatively, in a third form: transparent resin units 43 are filled in the area not surrounded by multiple metal dielectric rings.

[0131] Figures 33-38 The diagram shows a cross-sectional view and a top view of the Micro-LED microdisplay chip after the color conversion structure 4 is formed, according to embodiments 10-12. The difference between embodiments 10-12 and embodiments 7-8 is that, in the case where the LED mesa 21 emits blue light (e.g., BlueLED), a transparent resin unit 43 is used instead of the third color conversion unit 44. Further details are omitted.

[0132] The preparation method proposed in this application eliminates the preparation and processing of resin support materials, and can directly use the color conversion unit as the retention point, simplifying the preparation process, reducing process steps, and preventing the impact of complex processes on product yield.

[0133] The above description is merely a specific embodiment of this application. Under the guidance of the above teachings, those skilled in the art can make other improvements or modifications based on the above embodiments. Those skilled in the art should understand that the above specific description is only to better explain the purpose of this application, and the scope of protection of this application should be determined by the scope of the claims.

[0134] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.

Claims

1. A Micro-LED microdisplay chip, characterized in that, include: Driving substrate, light-emitting structure, grid network; The light-emitting structure includes multiple LED mesa surfaces, which are arranged at intervals on the driving substrate, and each LED mesa surface is driven individually by the driving substrate. The grid network includes multiple metal dielectric rings, each of which is independently and correspondingly disposed on a portion of the LED platform, such that the portion of the LED platform is surrounded by the metal dielectric rings.

2. The Micro-LED microdisplay chip according to claim 1, characterized in that, The plurality of the metal dielectric rings are arranged in a skip-interval manner so that the two diagonally opposite LED platforms in the 2×2 unit are respectively surrounded by the metal dielectric rings.

3. The Micro-LED microdisplay chip according to claim 1, characterized in that, The lateral dimension of the LED platform ranges from 0.5 to 10 μm, the lateral inner dimension of the metal dielectric ring ranges from 1.0 to 10.5 μm, and the lateral inner dimension of the metal dielectric ring is larger than the lateral dimension of the LED platform. The wall thickness of the metal dielectric ring is 0.1 to 0.5 μm.

4. The Micro-LED microdisplay chip according to claim 1, characterized in that, Also includes: Color conversion structure; The color conversion structure includes multiple color conversion units, which fill the areas not surrounded by the multiple metal dielectric rings and within the multiple metal dielectric rings.

5. The Micro-LED microdisplay chip according to claim 4, characterized in that, The thickness of the color conversion unit ranges from 2 to 5 μm.

6. The Micro-LED microdisplay chip according to claim 4, characterized in that, The color conversion unit includes: a first color conversion unit and a second color conversion unit; In the first configuration: the first color conversion unit fills the area not surrounded by the plurality of metal dielectric rings, and is used to convert the light emitted by the corresponding LED platform into a first color; the second color conversion unit fills a portion of the metal dielectric rings, and is used to convert the light emitted by the corresponding LED platform into a second color; Alternatively, in the second form: the first color conversion unit fills a portion of the metal dielectric rings to convert the light emitted by the corresponding LED platform into a first color; the second color conversion unit fills the area not surrounded by the plurality of metal dielectric rings to convert the light emitted by the corresponding LED platform into a second color; Alternatively, in a third form: the first color conversion unit fills a portion of the metal dielectric ring and is used to convert the light emitted by the corresponding LED platform into a first color; the second color conversion unit fills the remaining portion of the metal dielectric ring and is used to convert the light emitted by the corresponding LED platform into a second color.

7. The Micro-LED microdisplay chip according to claim 6, characterized in that, The color conversion unit further includes: a third color conversion unit; In the first and second forms, the third color conversion unit is filled within the remaining portion of the metal dielectric ring and is used to convert the light emitted by the corresponding LED platform into a third color. Alternatively, in a third form, the third color conversion unit fills the area not surrounded by the plurality of metal dielectric rings, and is used to convert the light emitted by the corresponding LED platform into a third color.

8. The Micro-LED microdisplay chip according to claim 6, characterized in that, The color conversion unit further includes: a transparent resin unit; In the first and second forms, the transparent resin unit is filled within the remaining portion of the metal dielectric ring for transmitting light emitted from the corresponding LED platform. Alternatively, in a third embodiment, the transparent resin unit fills the area not surrounded by the plurality of metal dielectric rings to transmit light emitted by the corresponding LED platform.

9. The Micro-LED microdisplay chip according to claim 7, characterized in that, The materials of the first color conversion unit, the second color conversion unit, and the third color conversion unit include quantum dots and / or phosphors.

10. A method for fabricating a Micro-LED microdisplay chip, characterized in that, Includes the following steps: Provide driving substrate; A light-emitting structure is formed, the light-emitting structure including a plurality of LED mesa, the plurality of LED mesa being arranged at intervals on the driving substrate, and each LED mesa being driven individually by the driving substrate; A grid network is formed, the grid network including multiple metal dielectric rings, each of the multiple metal dielectric rings being independently and correspondingly disposed on a portion of the LED mesa, so that the portion of the LED mesa is respectively surrounded by the metal dielectric rings.

11. The method for fabricating a Micro-LED microdisplay chip according to claim 10, characterized in that, It also includes the following steps: A color conversion structure is formed, the color conversion structure including a plurality of color conversion units, the plurality of color conversion units filling the regions not surrounded by the plurality of metal dielectric rings and within the plurality of metal dielectric rings.

12. The method for fabricating a Micro-LED microdisplay chip according to claim 10, characterized in that, The formation of the grid network includes: Individual photoresist spots are formed on some of the LED surfaces; A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching, so that metal dielectric rings are formed around the photoresist residue. Remove the photoresist residue.

13. The method for fabricating a Micro-LED microdisplay chip according to claim 12, characterized in that, The formation of the grid network includes: Independent photoresist spots are formed on multiple LED platforms according to a skip interval, so that two photoresist spots are formed on two diagonally opposite LED platforms in a 2×2 unit. A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching, so that metal dielectric rings are formed around the photoresist residue. Remove the photoresist residue.

14. The method for fabricating a Micro-LED microdisplay chip according to claim 11, characterized in that, The color conversion structure includes: The first form: a first color conversion unit is filled in the area not surrounded by the metal dielectric ring, and a second color conversion unit is filled in a portion of the metal dielectric ring; Alternatively, in the second form, a first color conversion unit is filled within a portion of the metal dielectric ring, and a second color conversion unit is filled in the area not enclosed by the metal dielectric ring. Alternatively, a third form may be used: a first color conversion unit is filled in a portion of the metal dielectric rings, and a second color conversion unit is filled in the remaining metal dielectric rings.

15. The method for fabricating a Micro-LED microdisplay chip according to claim 14, characterized in that, The color conversion structure further includes: In the first and second forms, a third color conversion unit is filled within the remaining portion of the metal dielectric ring; Alternatively, in a third form, a third color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings.

16. The method for fabricating a Micro-LED microdisplay chip according to claim 14, characterized in that, The color conversion unit further includes: In the first and second forms, the remaining portion of the metal dielectric ring is filled with transparent resin units; Alternatively, in a third form, transparent resin units are filled in the areas not surrounded by the plurality of said metal dielectric rings.

17. The method for fabricating a Micro-LED microdisplay chip according to claim 11, characterized in that, The formation of the raster network and the formation of the color conversion structure include: Independent points are formed on some of the LED surfaces; wherein... The first form: a first color conversion unit is formed in a first sub-part of a portion of the LED platform, and a second color conversion unit is formed in the remaining sub-part of the portion of the LED platform; Alternatively, in the second form: a second color conversion unit is formed in the first sub-part of a portion of the LED platform, and a third color conversion unit is formed in the remaining sub-part of a portion of the LED platform; Or a third form: a third color conversion unit is reserved in the first sub-part of a portion of the LED platform, and a first color conversion unit is reserved in the remaining sub-part of a portion of the LED platform; A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first embodiment: a third color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in a third form: a second color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings.

18. The method for fabricating a Micro-LED microdisplay chip according to claim 17, characterized in that, The formation of the raster network and the formation of the color conversion structure include: Independent points are formed on multiple LED platforms according to a skipping interval pattern; wherein... The first form: A first color conversion unit point is formed on one of the LED platforms diagonally opposite each other in the 2×2 unit, and a second color conversion unit point is formed on the other LED platform diagonally opposite each other in the 2×2 unit; Alternatively, in the second form: a second color conversion unit is formed on one of the LED platforms diagonally opposite each other in the 2×2 unit, and a third color conversion unit is formed on the other LED platform diagonally opposite each other in the 2×2 unit; Or a third form: a first color conversion unit point is formed on one of the LED platforms diagonally opposite in the 2×2 unit, and a third color conversion unit point is formed on the other LED platform diagonally opposite in the 2×2 unit; A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first form: a third color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in a third form: a second color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings.

19. The method for fabricating a Micro-LED microdisplay chip according to claim 11, characterized in that, The formation of the raster network and the formation of the color conversion structure include: Independent points are formed on some of the LED surfaces; wherein... The first form: a first color conversion unit is formed in a first sub-part of a portion of the LED platform, and a transparent resin unit is formed in the remaining sub-part of the portion of the LED platform; Alternatively, in the second form: a second color conversion unit is formed in the first sub-part of a portion of the LED platform, and a transparent resin unit is formed in the remaining sub-part of a portion of the LED platform; Or a third form: a first color conversion unit is formed in the first sub-part of a portion of the LED platform, and a second color conversion unit is formed in the remaining sub-part of the portion of the LED platform; A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first embodiment: a second color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in a third form: transparent resin units are filled in the areas not surrounded by the plurality of said metal dielectric rings.

20. The method for fabricating a Micro-LED microdisplay chip according to claim 19, characterized in that, The formation of the raster network and the formation of the color conversion structure include: Independent points are formed on multiple LED platforms according to a skipping interval pattern; wherein... The first form: A first color conversion unit is formed on one of the LED platforms diagonally opposite in the 2×2 unit, and a transparent resin unit is formed on the other LED platform diagonally opposite in the 2×2 unit; Alternatively, in the second form: a second color conversion unit is formed on one of the LED platforms diagonally opposite in the 2×2 unit, and a transparent resin unit is formed on the other LED platform diagonally opposite in the 2×2 unit; Or a third form: a first color conversion unit point is formed on one of the LED platforms diagonally opposite each other in the 2×2 unit, and a second color conversion unit point is formed on the other LED platform diagonally opposite each other in the 2×2 unit; A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching to form metal dielectric rings around the remaining points. In the first embodiment: a second color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in the second form: the first color conversion unit is filled in the area not surrounded by the plurality of said metal dielectric rings; Alternatively, in a third form: transparent resin units are filled in the areas not surrounded by the plurality of said metal dielectric rings.

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