Perovskite solar cell, preparation method thereof and electric device

Abstract

The application provides a perovskite solar cell, a preparation method thereof and an electric device. The perovskite solar cell comprises an interface passivation layer, the interface passivation layer comprises inorganic sulfide and organic passivation, cation elements in the inorganic sulfide comprise at least one of Pb, Bi, Mn, Cd, Hg, Ag, Zn, Na or Fe; the organic passivation comprises organic halide and heteroaryl compound, the organic halide comprises at least one of H2N-R 1 ·(HX)2, R 2 ·(HX) n , Ar-R 3 NH3·X, Ar-N(CH3)3·X, R 1 is selected from C1-C6 alkylene; R 2 is selected from substituted or unsubstituted 5-20 membered aliphatic heterocyclyl, 5-20 membered aromatic heterocyclyl; n is 1 or 2; each Ar is selected from substituted or unsubstituted C6-C10 aryl; R 3 is selected from C1-C6 alkylene; the heteroaryl compound comprises a substituted thiadiazole compound.

Description

Technical Field

[0001] This application belongs to the field of perovskite solar cell technology, and specifically relates to a perovskite solar cell and its preparation method. Background Technology

[0002] Over the past decade or so, perovskite solar cells based on metal halides have attracted widespread attention due to their advantages such as large light absorption coefficients, long carrier diffusion distances, and low fabrication costs, leading to a gradual improvement in single-junction photoelectric conversion efficiency (PCE). However, due to various non-radiative recombination losses during carrier transport, the PCE of these devices remains below the Shockley-Queisser theoretical limit.

[0003] It is generally believed that nonradiative recombination in perovskite solar cells is mainly due to the following two reasons: Firstly, it is related to the intrinsic properties of perovskite materials. Nonradiative recombination easily occurs at the contact interface between the perovskite light-absorbing layer and the transport layer. Interface defects can trap charge carriers during transport, severely affecting the carrier transport efficiency. Secondly, the exposed upper surface of the perovskite light-absorbing layer is in contact with the atmosphere for a relatively long time during cell manufacturing and device operation. Water and oxygen molecules can more easily enter the bulk phase from the upper surface of the perovskite material. In addition, the degradation of the crystal structure at the upper surface into the secondary phase can also negatively affect charge extraction at the contact interface, significantly reducing the photoelectric conversion efficiency.

[0004] Therefore, effectively controlling the nonradiative recombination at the interface of perovskite solar cells and suppressing surface oxidative degradation are crucial for obtaining high-performance and high-stability perovskite photovoltaic devices. Summary of the Invention

[0005] To improve the long-term stability and photoelectric conversion efficiency of perovskite solar cells, the first aspect of this application provides a perovskite solar cell, comprising a first electrode, a perovskite light-absorbing layer, an interface passivation layer, and a second electrode. The interface passivation layer comprises an inorganic sulfide and an organic passivation compound. The cation element in the inorganic sulfide includes any one or more of Pb, Bi, Mn, Cd, Hg, Ag, Zn, Na, or Fe. The organic passivation compound includes one or more of an organic halide and a heteroaryl compound. The organic halide includes H2N-R... 1 -NH2·(HX)2、R 2 (HX) n Ar-R 3 Any one or more of NH3·X and Ar-N(CH3)3·X, R 1 Including any one of C1-C6 alkylene groups; R2 Including any one of substituted or unsubstituted 5- to 20-membered alicyclic groups or substituted or unsubstituted 5- to 20-membered aromatic heterocyclic groups; R 2 The substituents in the compounds and the heteroaryl compounds each independently include any one of C1-C6 alkyl, amino, cyano, halogen, amino-substituted C1-C6 alkyl, and halogen-substituted C1-C6 alkyl, where n is 1 or 2; each Ar independently includes a substituted or unsubstituted C6-C10 aryl group; R 3 Including any one of C1-C6 alkylene groups, each X independently including F, Cl, Br or I; heteroaryl compounds include substituted thiadiazole compounds.

[0006] The inorganic sulfides in the aforementioned interface passivation layer exhibit good stability and are not prone to reacting with water and oxygen molecules at room temperature. This effectively enhances the anti-aging ability of perovskite solar cells and slows down the erosion of the perovskite light-absorbing layer interface by ambient moisture, thus improving the stability of the perovskite solar cells. Simultaneously, the inorganic sulfides reduce the defect state density of the perovskite light-absorbing layer, improving the charge extraction efficiency from the perovskite light-absorbing layer to the charge transport layer. The organic passivators, through multi-functional passivation, significantly reduce surface and interface defects, suppress non-radiative recombination, and promote charge transfer, thereby improving photoelectric conversion efficiency. In summary, through the combined effects of organic and inorganic passivators, the interface passivation layer can simultaneously improve the structural stability and photoelectric conversion efficiency of perovskite solar cells.

[0007] In any embodiment of the first aspect, the inorganic sulfide includes one or more of PbS, Bi₂S₃, MnS, CdS, HgS, Ag₂S, ZnS, Na₂S, and FeS. The aforementioned inorganic sulfides are structurally stable, easy to prepare, and offer a low-cost advantage when applied to perovskite solar cells.

[0008] In any embodiment of the first aspect, H2N-R 1 In -NH2·(HX)2, R 1 Includes any one of C2-C4 alkylene groups, and / or X includes Cl, Br, or I. General formula is H2N-R. 1 Organohalides of -NH2·(HX)2 exhibit high chemical stability.

[0009] In any embodiment of the first aspect, H2N-R 1 -NH2·(HX)2 includes any one or more of dimethylamine hydroiodate, dimethylamine hydrobromide, dimethylamine hydrochloride, ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, and ethylenediamine hydrobromide. These organohalides, as passivators, can effectively reduce deep-level defects on the surface.

[0010] In any implementation of the first aspect, R 2 (HX) n In the middle, R 2 It includes any one of substituted or unsubstituted 5- to 10-membered alicyclic groups, substituted or unsubstituted 5- to 10-membered aromatic heterocyclic groups, and / or, X includes Cl, Br, or I.

[0011] In any implementation of the first aspect, R 2 Includes any one of the following groups, whether substituted or unsubstituted: pyrrole, tetrahydrofuranyl, imidazoalkyl, oxazolyl, thiazoalkyl, piperazine, morpholinyl, piperidinyl, thiomorpholinyl, tetrahydropyranyl, furanyl, thiophene, pyrrole, thiazolyl, thiadiazolyl, imidazolyl, pyridinyl, pyrazine, pyrimidinyl, pyridazine, indolyl, quinolinyl, pteridinyl, or acridineyl, and may be optionally any one of the following groups, whether substituted or unsubstituted: piperazine, piperidinyl, thiazolyl, or thiadiazolyl.

[0012] In any implementation of the first aspect, R 2 The substituents in it include any one of C1-C3 alkyl, amino-substituted C1-C3 alkyl, halogen-substituted C1-C3 alkyl, cyano, halogen, and amino. R 2 The substituents in the solution can provide a wider variety of passivation active sites and react with more terminal functional groups of different properties, thereby further improving passivation efficiency.

[0013] In any implementation of the first aspect, R 2 (HX) n This includes any one of piperazine monohydroiodate, piperazine dihydroiodate, piperazine monohydrobromide, piperazine dihydrobromide, 2-methyl-1,3,4-thiadiazole hydrochloride (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, (1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, and 5-chloro-1,3,4-thiadiazole-2-carboxaldehyde hydrochloride. The general formula is R. 2 (HX) n Organic halides include organic ammonium salts with electron acceptor and electron donor functional groups, which can reduce the interface defect density by reacting with end-group functional groups with different properties at the interface.

[0014] In any embodiment of the first aspect, the substituted thiadiazole compound includes any one of 2,5-dimethylthiadiazole, (1,3,4-thiadiazole-2-yl)methanol, 2-amino-5-methyl-1,3,4-thiadiazole, 2-chloromethyl-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-iodo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-(difluoromethyl)-2-amino-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, 2-amino-1,3,4-thiadiazole-5-methanol, 5-bromo-2-cyano-1,3,4-thiadiazole, and 5-(fluoromethyl)-1,3,4-thiadiazole-2-amine. The aforementioned substituted thiadiazole compounds can all serve as multi-active-site passivating molecules, passivating various types of defects in the perovskite light-absorbing layer and significantly reducing interfacial non-radiative recombination losses.

[0015] In any implementation of the first aspect, Ar-R 3 In NH3·X and Ar-N(CH3)3·X, the Ar radical independently includes a substituted or unsubstituted phenyl group, which may be either phenyl or fluorophenyl. The general formula is Ar-R. 3 Organic halides such as NH3·X or Ar-N(CH3)3·X can form a two-dimensional passivation layer on the surface of a three-dimensional perovskite light-absorbing layer, reducing the density of interface defects.

[0016] In any implementation of the first aspect, Ar-R 3 R in NH3·X 3 It includes any one of C1-C3 alkylene groups, and each X independently includes Cl, Br or I.

[0017] In any implementation of the first aspect, Ar-R 3 NH3·X includes one or more of phenylethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, or 3-fluorophenylethyl ammonium iodide.

[0018] In any embodiment of the first aspect, Ar-N(CH3)3·X includes one or more of phenyltrimethylammonium chloride, phenyltrimethylammonium bromide, and phenyltrimethylammonium iodide.

[0019] In any embodiment of the first aspect, the inorganic sulfide includes one or more of PbS and CdS; the organic passivator includes one or more of ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, ethylenediamine hydrobromide, piperazine monohydroiodate, piperazine dihydroiodate, phenethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, 3-fluorophenylethyl ammonium iodide, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, 2-amino-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, or 2-amino-1,3,4-thiadiazole-5-methanol. This can further enhance the overall effect of inorganic sulfides and organic passivators on the stability and photoelectric conversion efficiency of perovskite solar cells.

[0020] In any embodiment of the first aspect, at least a portion of the interface passivation layer comprises a mixture of inorganic sulfides and organic passivators, and the thickness of the interface passivation layer is 0.1 nm to 10 nm, optionally 2 nm to 6 nm. Interface passivation layers with thicknesses within the above range can provide significant defect passivation while controlling the influence of the interface passivation layer on carrier transport within a certain range.

[0021] In any embodiment of the first aspect, in at least a portion of the interface passivation layer, organic passivants and inorganic sulfides are sequentially disposed in a direction away from the perovskite light-absorbing layer to form an organic passivation layer and an inorganic sulfide layer, wherein at least a portion of the inorganic sulfides cover the organic passivants.

[0022] In any embodiment of the first aspect, the thickness of the organic passivation layer is 0.1 nm to 10 nm, and optionally 0.5 nm to 3 nm.

[0023] In any embodiment of the first aspect, the thickness of the inorganic sulfide layer is 0.1 nm to 10 nm, and optionally 0.5 nm to 5 nm.

[0024] In any embodiment of the first aspect, the ratio of the thickness of the inorganic sulfide layer to the thickness of the organic passivation layer is 100:1 to 1:100, and can be selected as 6:1 to 1:10. This is beneficial for achieving both excellent photoelectric conversion efficiency and operational stability in perovskite solar cells.

[0025] In any embodiment of the first aspect, the mass ratio of inorganic sulfide to organic passivator is 200:1 to 1:200.

[0026] In any embodiment of the first aspect, the perovskite light-absorbing layer comprises a perovskite material with the chemical formula ABX'3, where B includes Pb. 2+Sn 2+ Cd 2+ 、Ge 2+ One or more of the following, where X' is a halide ion or a halide-like ion, and A is an organic cation and / or an inorganic cation.

[0027] In any implementation of the first aspect, X' includes I - ,Br - Cl - SCN - One or more of them.

[0028] In any embodiment of the first aspect, A includes Cs + 、Rb + CH3NH3 + HC(NH2)2 + One or more of them.

[0029] In any embodiment of the first aspect, the electrode materials of the first electrode and the second electrode include one or more of organic conductive materials, inorganic conductive materials, or organic-inorganic conductive composite materials.

[0030] In any embodiment of the first aspect, the perovskite solar cell further includes a first charge transport layer and a second charge transport layer, the first charge transport layer being disposed between the first electrode and the perovskite light-absorbing layer, and the second charge transport layer being disposed between the passivation layer and the second electrode, wherein one of the first charge transport layer and the second charge transport layer is an electron transport layer and the other is a hole transport layer.

[0031] The second aspect of this application provides a method for fabricating a perovskite solar cell, comprising a process for fabricating an interface passivation layer on a perovskite light-absorbing layer, wherein the process for fabricating the interface passivation layer includes: depositing an organic passivation compound and an inorganic sulfide on the perovskite light-absorbing layer to form the interface passivation layer; the cation element in the inorganic sulfide includes any one or more of Pb, Bi, Mn, Cd, Hg, Ag, Zn, Na, or Fe; the organic passivation compound includes one or more of an organic halide and a heteroaryl compound, wherein the organic halide includes H2N-R 1 -NH2·(HX)2、R 2 (HX) n Ar-R 3 Any one or more of NH3·X and Ar-N(CH3)3·X, R 1 Including any one of C1-C6 alkylene groups; R 2 Including any one of substituted or unsubstituted 5- to 20-membered alicyclic groups or substituted or unsubstituted 5- to 20-membered aromatic heterocyclic groups; R 2The substituents in the compounds and the heteroaryl compounds each independently include any one of C1-C6 alkyl, amino-substituted C1-C6 alkyl, halogen-substituted C1-C6 alkyl, amino, cyano, and halogen, where n is 1 or 2; each Ar independently includes a substituted or unsubstituted C6-C10 aryl group; R 3 Including any one of C1-C6 alkylene groups, each X independently including F, Cl, Br or I; heteroaryl compounds include substituted thiadiazole compounds.

[0032] In any embodiment of the second aspect, the process of preparing the interface passivation layer includes: vacuum evaporating an inorganic sulfide and an organic passivation material respectively to obtain a gaseous inorganic sulfide and a gaseous organic passivation material; co-depositing the gaseous inorganic sulfide and the gaseous organic passivation material onto a perovskite light-absorbing layer to obtain the interface passivation layer, wherein the deposition rates of the gaseous inorganic sulfide and the gaseous organic passivation material are each independent. The co-deposited interface passivation layer contains a mixture of inorganic sulfides and organic passivators, which can save evaporation time, improve the uniformity of the interface passivation layer thickness, and allow the inorganic sulfides and organic passivators to be fully mixed, resulting in a better passivation effect and being more conducive to electron transport.

[0033] In any embodiment of the second aspect, the deposition rate ratio of gaseous inorganic sulfides to gaseous organic passivators is 6:1 to 1:10. This allows for better control of the content of organic passivators and the thickness of the interfacial passivation layer, further optimizing passivation capability and the ability to block water and oxygen molecules.

[0034] In any embodiment of the second aspect, the process of preparing the interface passivation layer includes: depositing an organic passivation material onto the perovskite light-absorbing layer by a first vacuum evaporation to form an organic passivation material layer, wherein the deposition rate of the organic passivation material is [missing information]. An inorganic sulfide layer is formed by depositing it onto a perovskite light-absorbing layer containing an organic passivation layer via a second vacuum evaporation process. At least a portion of the inorganic sulfide layer covers the organic passivation layer. The deposition rate of the inorganic sulfide is [value missing]. The interface passivation layer obtained by sequential deposition can better control the thickness of the organic passivation layer and the inorganic sulfide layer.

[0035] In any embodiment of the second aspect, the ratio of the thickness of the inorganic sulfide layer to the thickness of the organic passivation layer is 100:1 to 1:100, and can be selected as 6:1 to 1:10.

[0036] In any embodiment of the second aspect, the thickness of the interface passivation layer is 0.1 nm to 10 nm, and optionally 2 nm to 6 nm. This aims to minimize the impact of the interface passivation layer on carrier transport while effectively passing off interface defects.

[0037] In any embodiment of the second aspect, the mass ratio of inorganic sulfide to organic passivator is 200:1 to 1:200.

[0038] In any embodiment of the second aspect, the surface pressure vacuum degree of the co-deposition, the first vacuum evaporation, and the second vacuum evaporation is independently not greater than 4.0 × 10⁻⁶. -4 Pa.

[0039] In any embodiment of the second aspect, the inorganic sulfide includes one or more of PbS, Bi2S3, MnS, CdS, HgS, Ag2S, ZnS, Na2S, and FeS.

[0040] In any implementation of the second aspect, H2N-R 1 In -NH2·(HX)2, R 1 Including any one of C2-C4 alkylene groups, and / or, X includes Cl, Br, or I.

[0041] In any implementation of the second aspect, H2N-R 1 -NH2·(HX)2 includes any one or more of dimethylamine hydroiodate, dimethylamine hydrobromide, dimethylamine hydrochloride, ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, and ethylenediamine hydrobromide.

[0042] In any implementation of the second aspect, R 2 (HX) n In the middle, R 2 It includes any one of substituted or unsubstituted 5- to 10-membered alicyclic groups, substituted or unsubstituted 5- to 10-membered aromatic heterocyclic groups, and / or, X includes Cl, Br, or I.

[0043] In any implementation of the second aspect, R 2 Includes any one of the following groups, whether substituted or unsubstituted: pyrrole, tetrahydrofuranyl, imidazoalkyl, oxazolyl, thiazoalkyl, piperazine, morpholinyl, piperidinyl, thiomorpholinyl, tetrahydropyranyl, furanyl, thiophene, pyrrole, thiazolyl, thiadiazolyl, imidazolyl, pyridinyl, pyrazine, pyrimidinyl, pyridazine, indolyl, quinolinyl, pteridinyl, or acridineyl, and may be optionally any one of the following groups, whether substituted or unsubstituted: piperazine, piperidinyl, thiazolyl, or thiadiazolyl.

[0044] In any implementation of the second aspect, R 2The substituents include any one of C1-C3 alkyl, amino-substituted C1-C3 alkyl, halogen-substituted C1-C3 alkyl, cyano, halogen, and amino.

[0045] In any implementation of the second aspect, R 2 ·(HX)n includes any one of piperazine monohydroiodate, piperazine dihydroiodate, piperazine monohydrobromide, piperazine dihydrobromide, 2-methyl-1,3,4-thiadiazole hydrochloride, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, (1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, and 5-chloro-1,3,4-thiadiazole-2-carboxaldehyde hydrochloride.

[0046] In any embodiment of the second aspect, the substituted thiadiazole compound includes any one of 2,5-dimethylthiadiazole, (1,3,4-thiadiazole-2-yl)methanol, 2-amino-5-methyl-1,3,4-thiadiazole, 2-chloromethyl-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-iodo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-(difluoromethyl)-2-amino-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, 2-amino-1,3,4-thiadiazole-5-methanol, 5-bromo-2-cyano-1,3,4-thiadiazole, and 5-(fluoromethyl)-1,3,4-thiadiazole-2-amine.

[0047] In any implementation of the second aspect, Ar-R 3 In NH3·X and Ar-N(CH3)3·X, each Ar independently includes a substituted or unsubstituted phenyl group, which may be phenyl or fluorophenyl.

[0048] In any implementation of the second aspect, R 3 Including any one of C1-C3 alkylene groups, and / or, X includes Cl, Br or I.

[0049] In any implementation of the second aspect, Ar-R 3 NH3·X includes one or more of phenylethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, and 3-fluorophenylethyl ammonium iodide.

[0050] In any embodiment of the second aspect, Ar-N(CH3)3·X includes one or more of phenyltrimethylammonium chloride, phenyltrimethylammonium bromide, and phenyltrimethylammonium iodide.

[0051] In any embodiment of the second aspect, the inorganic sulfide includes one or more of PbS and CdS; the organic passivator includes one or more of ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, ethylenediamine hydrobromide, piperazine monohydroiodate, piperazine dihydroiodate, phenethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, 3-fluorophenylethyl ammonium iodide, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, 2-amino-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, or 2-amino-1,3,4-thiadiazole-5-methanol.

[0052] A third aspect of this application provides an electrical device comprising any of the perovskite solar cells described in the first aspect, or a perovskite solar cell prepared by any of the preparation methods described in the second aspect. Attached Figure Description

[0053] To more clearly illustrate the specific embodiments of the present invention, the accompanying drawings used in the specific embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0054] Figure 1 This is a schematic diagram of a perovskite solar cell structure provided in one embodiment of this application.

[0055] The accompanying drawings are not drawn to scale.

[0056] Explanation of reference numerals in the attached figures:

[0057] 1. Transparent conductive substrate; 2. Hole transport layer; 3. Perovskite light-absorbing layer; 4. Interface passivation layer; 5. Electron transport layer; 6. Back electrode. Detailed Implementation

[0058] The embodiments of this application will be described in further detail below with reference to the examples. The detailed description of the following embodiments is used to illustrate the principles of this application, but should not be used to limit the scope of this application, that is, this application is not limited to the described embodiments.

[0059] The following detailed description, with appropriate reference to the accompanying drawings, discloses embodiments of the perovskite solar cell and its fabrication method of this application. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of essentially identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0060] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0061] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0062] Unless otherwise specified, all technical features and optional technical features of this application may be combined to form new technical solutions.

[0063] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0064] Unless otherwise specified, the terms "comprising" and "including" as used in this application are open-ended. For example, "comprising" and "including" may mean that other components not listed may also be included or contained.

[0065] Unless otherwise specified, the term "or" is inclusive in this application. For example, any of the following conditions satisfies the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0066] In this application, nonradiative recombination refers to the recombination of photogenerated carriers in a perovskite solar cell, in which energy is released in a manner other than radiating photons.

[0067] In this application, a deep-level defect refers to a defect in a perovskite material whose ground-state energy level is lower than the thermal excitation energy k corresponding to room temperature. B T traps electrons or holes, preventing them from escaping with the help of thermal activation. The electrons or holes are then annihilated together with charge carriers of opposite charge through nonradiative recombination, thereby reducing the overall efficiency of charge carrier extraction or transport.

[0068] [Perovskite Solar Cells]

[0069] Perovskite is highly susceptible to instability under light, high temperature, and humid conditions, leading to deterioration in photoelectric conversion performance. In particular, reaction with water molecules in the environment can cause degradation of the perovskite light-absorbing layer and even collapse of the interface layer structure, thus affecting the long-term stability and photoelectric conversion efficiency of perovskite solar cells. To improve the long-term stability and photoelectric conversion efficiency of perovskite solar cells, the first embodiment of this application provides a perovskite solar cell, including a first electrode, a perovskite light-absorbing layer, an interface passivation layer, and a second electrode. The interface passivation layer comprises inorganic sulfides and organic passivators. The cations in the inorganic sulfides include any one or more of Pb, Bi, Mn, Cd, Hg, Ag, Zn, Na, or Fe. The organic passivators include organic halides and heteroaryl compounds. The organic halides include H2N-R... 1 -NH2·(HX)2、R 2 (HX) n Ar-R 3 Any one or more of NH3·X and Ar-N(CH3)3·X, R 1 Including any one of C1-C6 alkylene groups; R 2 Including any one of substituted or unsubstituted 5- to 20-membered alicyclic groups or substituted or unsubstituted 5- to 20-membered aromatic heterocyclic groups; R 2The substituents in the compound and the substituents in the heteroaryl compound each independently include any one of C1-C6 alkyl, amino, cyano, halogen, amino-substituted C1-C6 alkyl, and halogen-substituted C1-C6 alkyl, where n is 1 or 2; each Ar independently includes a substituted or unsubstituted C6-C10 aryl group, R 3 Including any one of C1-C6 alkylene groups, each X independently including F, Cl, Br or I; heteroaryl compounds include substituted thiadiazole compounds.

[0070] The inorganic sulfides in the aforementioned interface passivation layer exhibit good stability and are not prone to reacting with water and oxygen molecules at room temperature. This effectively enhances the anti-aging ability of perovskite solar cells and slows down the erosion of the perovskite light-absorbing layer interface by ambient moisture, thereby improving the stability of the perovskite solar cells. Simultaneously, the inorganic sulfide layer reduces the defect state density of the perovskite light-absorbing layer, improving the charge extraction efficiency from the perovskite light-absorbing layer to the charge transport layer. Furthermore, surface and interface defects in the perovskite light-absorbing layer can trap photogenerated carriers, severely affecting carrier transport efficiency. Organic passivators, through multi-functional group passivation, significantly reduce surface and interface defects, suppress non-radiative recombination, and promote charge transfer, thus improving photoelectric conversion efficiency. In summary, through the combined effects of organic and inorganic passivators, the interface passivation layer can simultaneously improve the structural stability and photoelectric conversion efficiency of perovskite solar cells.

[0071] Among them, based on the inherent ionic properties of perovskite materials, it is possible to use H2N-R 1 The interaction between the unique functional groups and unsaturated sites in -NH2·(HX)2 achieves interface defect passivation, reducing the probability of nonradiative recombination of charge carriers. 2 (HX) n This can be achieved by chemically reacting with the surface of the perovskite light-absorbing layer to passivate surface and grain boundary defects, slow down ion migration, passivate defect states, and reduce the interaction between the perovskite light-absorbing layer surface and top impurities, thereby improving the efficiency stability of perovskite solar cells under operating conditions. The general formula is Ar-R. 3 Organohalides of NH3·X and Ar-N(CH3)3·X can form a two-dimensional perovskite layer with passivation effect on the surface of a three-dimensional perovskite light-absorbing layer, which can improve the stability of the perovskite light-absorbing layer under high temperature and humid conditions while suppressing nonradiative recombination. Substituted thiadiazole compounds contain multiple effective functional groups such as N, O, S, and halide ions, which can reduce surface / interface defects and improve carrier transport efficiency through coordination interactions with surface defects or grain boundary defects.

[0072] In summary, the perovskite solar cell provided in this application can improve photoelectric conversion efficiency while enhancing the stability of photovoltaic performance through the dual effects of inorganic sulfides and organic passivators in the interface passivation layer.

[0073] In some embodiments, the electrode materials of the first electrode and the second electrode include one or more of organic conductive materials, inorganic conductive materials, or organic-inorganic conductive composite materials.

[0074] For example, the organic conductive material includes a conductive polymer, which includes one or more of poly(3,4-ethylenedioxythiophene) (PEDOT), polythiophene, polyacetylene, etc.

[0075] For example, inorganic conductive materials include one or more of transparent conductive oxides, metals and their alloys, and carbon derivatives, but are not limited thereto.

[0076] For example, the transparent conductive oxide includes one or more of FTO (fluorine-doped tin oxide), ITO (tin-doped indium oxide), lanthanide-doped indium oxide, AZO (aluminum-doped zinc oxide), ATO (antimony-doped tin oxide), BZO (boron-doped zinc oxide), aluminum-doped zinc oxide (AZO), IZO (indium zinc oxide), GZO (gallium zinc oxide), and IWO (tungsten-doped indium oxide). Before use as an electrode, the transparent conductive oxide needs to be cleaned, for example, by ultrasonic cleaning with a cleaning agent, deionized water, or ethanol.

[0077] For example, the metallic material includes one or more of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), bismuth (Bi), platinum (Pt), magnesium (Mg), molybdenum (Mo), tungsten (W), and their alloys.

[0078] When a metal material is used as the back electrode, it can be prepared by vacuum evaporation, electron beam deposition, or screen printing.

[0079] In some embodiments, the thickness of the metal back electrode is 80 nm to 150 nm.

[0080] For example, carbon derivatives include one or more of graphite, graphene, and carbon nanotubes.

[0081] In some embodiments, the perovskite solar cell further includes a first charge transport layer and a second charge transport layer, wherein one of the first charge transport layer and the second charge transport layer is an electron transport layer and the other is a hole transport layer.

[0082] Hole transport layers are used to collect and extract holes from perovskite light-absorbing layers. They can be prepared by methods such as solution spin coating, magnetron sputtering, and chemical vapor deposition, but are not limited to these methods.

[0083] In some embodiments, the hole transport layer comprises a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS) material.

[0084] In some embodiments, the hole transport layer comprises 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD) or poly[bis(4-phenyl)(2,5,6-trimethylphenyl)amine (PTAA).

[0085] In some embodiments, the hole transport layer comprises an inorganic oxide, such as NiO. x Or CuO, etc.

[0086] In this application, the electron transport layer is disposed on the surface of the interface passivation layer away from the perovskite light-absorbing layer.

[0087] In some embodiments, the electron transport layer may comprise TiO2, ZnO, SnO2, WO3, C 60 Materials such as PCBMs can accept and transport electron carriers, and typically possess high electron affinity and ionic potential. Electron transport layers can be prepared using methods such as solution spin coating, vacuum evaporation, and atomic layer deposition, but are not limited to these methods.

[0088] In some embodiments, the perovskite solar cell has an inverted structure, and a hole blocking layer is disposed between the electron transport layer and the back electrode. The hole blocking layer includes 2,9-dimethyl-4,7-diphenyl-1,10-o-phenanthroline (BCP). BCP can significantly improve the electron collection efficiency of the perovskite solar cell and improve photovoltaic performance.

[0089] In some embodiments, the perovskite light-absorbing layer comprises any one or more perovskite materials, the chemical formula of which is ABX'3, where B is selected from Pb. 2+ Sn 2+ Cd 2+ 、Ge 2+ In one of the following, X' is a halide ion or a halide-like ion, and A is an organic cation and / or an inorganic cation.

[0090] In some implementations, X' is selected from I - ,Br - Cl - SCN - Any of the above, or I can be added in a certain proportion - ,Br - Cl - SCN - It is formed by a mixture of various elements.

[0091] In some implementations, A is selected from Cs. + 、Rb + One or more of methylamine ions and formamidinium ions. Among them, methylamine ions (CH3NH3) + (denoted by MA) Formamidinium ion (HC(NH2)2) + ) are represented by FA, ​​and all belong to small-sized organic cations.

[0092] In some implementations, perovskite solar cells have an inverted structure (or a reverse structure).

[0093] For example, in some embodiments of this application, the inverted structure is arranged as a transparent conductive substrate / hole transport layer / perovskite light-absorbing layer / electron transport layer / back electrode, with an interface passivation layer disposed between the perovskite light-absorbing layer and the electron transport layer. Figure 1 As shown, the inverted structure includes a stacked transparent conductive substrate 1, a hole transport layer 2, a perovskite light-absorbing layer 3, an interface passivation layer 4, an electron transport layer 5, and a back electrode 6.

[0094] Interface passivation layer

[0095] In some embodiments, the inorganic sulfide includes one or more of PbS, Bi₂S₃, MnS, CdS, HgS, Ag₂S, ZnS, Na₂S, and FeS. These inorganic sulfides are structurally stable, easy to prepare, and offer a low-cost advantage when applied to perovskite solar cells.

[0096] To improve the chemical stability of organic passivators and simplify their structure to reduce raw material costs, in some embodiments, the aforementioned R... 1 Including any one of C2-C4 alkylene groups, and / or X including Cl, Br or I.

[0097] In some implementations, the general formula is H2N-R 1 Organohalides of -NH2·(HX)2 include dimethylamine hydroiodide (DMAI), dimethylamine hydrobromide (DMABr), dimethylamine hydrochloride (DMACl), ethylenediamine dihydroiodide (EDAI2), and ethylenediamine dihydrochloride (EDACl). 2) Any one or more of ethylenediamine hydrobromide (EDABr2).

[0098] For example, ethylenediamine halide salts, as passivators, can suppress Sn on the surface of tin-containing perovskite materials through halogen-Sn bonding. 2+ Oxidized to Sn 4+ This effectively reduces deep-level defects caused by surface Sn vacancies.

[0099] Based on the above mechanism description, R can achieve the above-mentioned function. 2 All functional groups can be considered for use in this application. In some embodiments, R 2 Includes any one of substituted or unsubstituted 5- to 10-membered alicyclic groups and substituted or unsubstituted 5- to 10-membered aromatic heterocyclic groups, optionally, R 2 The group may be substituted or unsubstituted with any of the following groups: pyrrole, tetrahydrofuranyl, imidazoalkyl, oxazolyl, thiazoalkyl, piperazine, morpholinyl, piperidinyl, thiomorpholinyl, tetrahydropyranyl, furanyl, thiophene, pyrrole, thiazolyl, thiadiazolyl, imidazolyl, pyridinyl, pyrazine, pyrimidinyl, pyridazine, indolyl, quinolinyl, pteridinyl, or acridineyl.

[0100] In some implementations, R 2 Includes any one of the following groups, whether substituted or unsubstituted: piperazine, piperidinyl, thiazolyl, or thiadiazolyl.

[0101] In some implementations, R 2 When choosing the above-mentioned groups, the general formula is R. 2 (HX) n Organohalides include organic ammonium salts with electron acceptor and electron donor functional groups, such as R2NH and R2NH in the same six-membered ring of piperazine halide salts. 2+ Functional groups can exhibit both electron-donating and electron-withdrawing effects, thereby reacting with end-group functional groups of different properties on the interface, reducing the interface defect density, and improving the interface charge transfer capability by regulating the band structure and physical properties of perovskite materials. Similarly, thiazole and thiadiazole organohalides also have similar properties, thus better passivating interface defects.

[0102] In some implementations, R 2 The substituents in it include any one of C1-C3 alkyl, amino-substituted C1-C3 alkyl, halogen-substituted C1-C3 alkyl, amino, cyano, and halogen. R 2 The substituents in the solution can provide a wider variety of passivation active sites and react with more terminal functional groups of different properties, thereby further improving passivation efficiency.

[0103] In some implementations, for the general formula R 2 (HX) n The organic halides, X including, but not limited to, Cl, Br or I.

[0104] In some implementations, the general formula is R 2 (HX) nThe organohalides include any one of piperazine monohydroiodate (PI), piperazine dihydroiodate (PDI), piperazine monohydrobromide (PBr), piperazine dihydrobromide (PDBr), 2-methyl-1,3,4-thiadiazole hydrochloride, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, (1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, and 5-chloro-1,3,4-thiadiazole-2-carboxaldehyde hydrochloride. These organohalides exhibit a more pronounced push-pull electron effect, thus providing better passivation for interfacial defects. Furthermore, these organohalides are known compounds, which facilitates their widespread application in perovskite solar cells.

[0105] In some embodiments, the substituted thiadiazole compound includes, but is not limited to, any one of 2,5-dimethylthiadiazole, (1,3,4-thiadiazole-2-yl)methanol, 2-amino-5-methyl-1,3,4-thiadiazole, 2-chloromethyl-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-iodo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-(difluoromethyl)-2-amino-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, 2-amino-1,3,4-thiadiazole-5-methanol, 5-bromo-2-cyano-1,3,4-thiadiazole, and 5-(fluoromethyl)-1,3,4-thiadiazole-2-amine. The aforementioned substituted thiadiazole compounds can all serve as multi-active-site passivating molecules, passivating various types of defects in the perovskite light-absorbing layer, including but not limited to Pb / Sn uncoordinated defects, halogen defects, and cation defects, significantly reducing interfacial non-radiative recombination losses.

[0106] In some implementations, the general formula is Ar-R 3 In the organohalides of NH3·X, Ar includes substituted or unsubstituted phenyl groups, which may be phenyl or fluorophenyl groups.

[0107] In some implementations, the above-mentioned R 3 Including any one of C1-C3 alkylene groups, where X includes Cl, Br, or I.

[0108] It should be understood that the general formula is Ar-R 3 In organohalides of NH3·X, Ar can also be chlorophenyl, bromophenyl, nitro-substituted phenyl, etc., and R 3 It can also be alkylene groups with 1 to 3 substituted carbon atoms, or alkylene groups with more than 3 substituted or unsubstituted carbon atoms, etc., all of which are Ar-R that can potentially form a two-dimensional passivation layer on the surface of a three-dimensional perovskite light-absorbing layer. 3All NH3·X organohalides are within the scope of the concept of this application, and are also included in the scope of disclosure of this application.

[0109] In some implementations, the general formula is Ar-R 3 The organohalides of NH3·X include one or more of phenylethyl ammonium iodide (PEAI), 4-fluorophenylethyl ammonium iodide (F-PEAI), and 3-fluorophenylethyl ammonium iodide (mF-PEAI).

[0110] In some embodiments, organohalides of the general formula Ar-N(CH3)3·X include one or more of phenyltrimethylammonium chloride, phenyltrimethylammonium bromide, and phenyltrimethylammonium iodide.

[0111] In some embodiments, to further enhance the overall effect of inorganic sulfides and organic passivators on the stability and photoelectric conversion efficiency of perovskite solar cells, the inorganic sulfides include one or more of PbS and CdS; the organic passivators include ethylenediamine dihydroiodate (EDAI2) and ethylenediamine dihydrochloride (EDAC1). 2) Ethylenediamine hydrobromide (EDABr2), piperazine monohydroiodide (PI), piperazine dihydroiodide (PDI), phenylethyl ammonium iodide (PEAI), 4-fluorophenylethyl ammonium iodide (F-PEAI), 3-fluorophenylethyl ammonium iodide (mF-PEAI), (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, 2-amino-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, or 2-amino-1,3,4-thiadiazole-5-methanol.

[0112] Inorganic sulfides and organic passivators can exist in a mixed manner or in a layered manner in the interface passivation layer. In some embodiments, at least a portion of the interface passivation layer comprises a mixture of inorganic sulfides and organic passivators, and the thickness of the interface passivation layer of the perovskite solar cell is 0.1 nm to 10 nm, optionally 2 nm to 6 nm. For example, the thickness of the interface passivation layer can be 0.1 nm, 0.4 nm, 0.5 nm, 1 nm, 1.2 nm, 2 nm, 3 nm, 3.5 nm, 5 nm, 5.5 nm, 6 nm, 7.5 nm, 8 nm, 9.5 nm, or 10 nm, optionally 2 nm to 6 nm. Interface passivation layers with thicknesses within the above range can provide significant defect passivation while controlling the influence of the interface passivation layer on carrier transport within a certain range, thus enabling the perovskite solar cell to have high photoelectric conversion efficiency.

[0113] In some embodiments, in at least a portion of the interface passivation layer, organic passivation material and inorganic sulfide are sequentially disposed in a direction away from the perovskite light-absorbing layer, forming an organic passivation layer and an inorganic sulfide layer, with at least a portion of the inorganic sulfide covering the organic passivation material. Optionally, the thickness of the organic passivation layer is 0.1 nm to 10 nm, more preferably 0.5 nm to 3 nm; the thickness of the inorganic sulfide layer is 0.1 nm to 10 nm, more preferably 0.5 nm to 5 nm. It should be noted that the thickness of the interface passivation layer formed by the above sequential deposition method is not a direct superposition of the thicknesses of the organic passivation layer and the inorganic sulfide layer. For example, during the deposition of inorganic sulfide, a portion of the inorganic sulfide may be deposited into the pores or gaps of the organic passivation material.

[0114] In some embodiments, in at least a portion of the interface passivation layer, the ratio of the thickness of the inorganic sulfide layer to the thickness of the organic passivation layer is 100:1 to 1:100, optionally 6:1 to 1:10. A thickness ratio of the inorganic sulfide layer to the organic passivation layer within the above range is beneficial for achieving both excellent photoelectric conversion efficiency and operational stability in perovskite solar cells.

[0115] In this application, the thickness of the interface passivation layer refers to its height perpendicular to the surface of the perovskite light-absorbing layer. The average thickness can be calculated by measuring different locations on the interface passivation layer. Both direct and indirect measurement methods can be used. Direct measurements can be performed using a profilometer, atomic force microscope (AFM), scanning electron microscope (SEM), or transmission electron microscope (TEM). Indirect measurements can be performed using elliptic polarization spectroscopy, X-ray diffraction, etc. Details of the measurement process are provided in the characterization and testing methods section below. Combining these measurement methods with liquid chromatography-mass spectrometry, time-of-flight secondary ion spectrometry (TOF-SIMS), or energy-dispersive X-ray spectroscopy (EDX) can determine the thickness of the interface passivation layer and the distribution and content of specific elements within it.

[0116] In some embodiments, the mass ratio of inorganic sulfide to organic passivator is 200:1 to 1:200. This mass ratio can be calculated by the weight changes of the solid inorganic sulfide and solid organic passivator used to provide the gas source before and after the preparation of the interface passivation film.

[0117] [Preparation methods for perovskite solar cells]

[0118] The second embodiment of this application provides a method for fabricating a perovskite solar cell, the method including a process of fabricating an interface passivation layer on a perovskite light-absorbing layer, wherein the process of fabricating the interface passivation layer includes:

[0119] Organic passivators and inorganic sulfides are deposited on the perovskite light-absorbing layer to form an interfacial passivation layer; the cationic elements in the inorganic sulfides include any one or more of Pb, Bi, Mn, Cd, Hg, Ag, Zn, Na, or Fe; the organic passivators include organic halides and heteroaryl compounds, and the organic halides include H2N-R 1 -NH2·(HX)2、R 2 (HX) n Ar-R 3 Any one or more of NH3·X and Ar-N(CH3)3·X, R 1 Including any one of C1-C6 alkylene groups; R 2 Including any one of substituted or unsubstituted 5- to 20-membered alicyclic groups or substituted or unsubstituted 5- to 20-membered aromatic heterocyclic groups; R 2 The substituents in the compounds and the heteroaryl compounds each independently include any one of C1-C6 alkyl, amino-substituted C1-C6 alkyl, halogen-substituted C1-C6 alkyl, amino, cyano, and halogen, where n is 1 or 2; each Ar independently includes a substituted or unsubstituted C6-C10 aryl group; R 3 Including any one of C1-C6 alkylene groups, each X independently including F, Cl, Br or I; heteroaryl compounds include substituted thiadiazole compounds.

[0120] In some embodiments of this application, the perovskite solar cell has a formal structure arranged as a transparent conductive substrate / electron transport layer / perovskite light-absorbing layer / hole transport layer / back electrode, with an interface passivation layer disposed between the perovskite light-absorbing layer and the electron transport layer. Light enters from the transparent conductive substrate side, passes through the electron transport layer to reach the perovskite light-absorbing layer, and the perovskite light-absorbing layer absorbs the light, generating electron-hole pairs. Electrons are collected by the electron transport layer and transported to the transparent conductive substrate, while holes travel through the hole transport layer to the metal electrode, thereby forming a photocurrent.

[0121] In some embodiments of this application, the perovskite solar cell has an inverted structure, arranged as a transparent conductive substrate / hole transport layer / perovskite light-absorbing layer / electron transport layer / back electrode, with an interface passivation layer disposed between the perovskite light-absorbing layer and the electron transport layer. Light enters from the transparent conductive substrate side and is first received by the hole transport layer. Electron-hole pairs generated in the perovskite layer are then formed; holes are collected by the hole transport layer and transported to the transparent conductive substrate, while electrons travel through the electron transport layer to the back electrode.

[0122] In this application, a vapor phase evaporation method is used to prepare the interface passivation layer, which overcomes the problem that inorganic sulfides are poorly soluble in solvents. The deposition rate of vapor phase evaporation is adjustable, making the thickness of the interface passivation layer more controllable and facilitating process scale-up. The prepared interface passivation layer has the composition, structure, and function described in the first embodiment, which will not be repeated here.

[0123] The passivation layer can be prepared by co-deposition or sequential deposition to facilitate precise control of the deposition thickness and ratio of inorganic sulfides and organic passivators.

[0124] In some embodiments, the process of preparing the interface passivation layer includes: co-depositing an inorganic sulfide and an organic passivation material on a perovskite light-absorbing layer to obtain the interface passivation layer, wherein the deposition rates of the gaseous inorganic sulfide and the gaseous organic passivation material are each independently […]. The interface passivation layer obtained by the above-mentioned dual-source evaporation deposition method contains a mixture of inorganic sulfides and organic passivators. This can save evaporation time, improve the uniformity of the interface passivation layer thickness, and allow the inorganic sulfides and organic passivators to be fully mixed. This allows each of the two to exert its effect at various positions in the passivation layer, resulting in a better passivation effect and is also more conducive to electron transport.

[0125] In some embodiments, the deposition rate ratio of gaseous inorganic sulfides to gaseous organic passivators is 10:1 to 1:10. When the deposition rate ratio is within the above range, the content of organic passivators and the thickness of the interfacial passivation layer can be better controlled, further optimizing the passivation capability and the ability to block water and oxygen molecules.

[0126] In some embodiments, the specific operation of co-deposition includes: placing a substrate in a vacuum evaporation apparatus, the substrate structure being a transparent conductive substrate, a hole transport layer, and a perovskite light-absorbing layer stacked from bottom to top, and evacuating to a standard pressure vacuum of 4.0 × 10⁻⁶. -4 Pa; The crucible containing PbS (PbS source) and the crucible containing EDAI2 (EDAI2 source) are heated to a PbS source temperature of 570℃ and a deposition rate of [missing value]. And maintain stability, keeping the EDAI2 source temperature at 524℃ and the deposition rate at [missing value]. And keep it stable; after confirming that the deposition rate of the two evaporation sources is stable, open the substrate baffle and deposit an interface passivation layer on the surface of the perovskite light-absorbing layer.

[0127] In some embodiments, the process of preparing the interface passivation layer includes: depositing an organic passivation material onto the perovskite light-absorbing layer by a first vacuum evaporation to form an organic passivation material layer, wherein the deposition rate of the organic passivation material is [missing information]. An inorganic sulfide layer is formed by depositing it onto a perovskite light-absorbing layer containing an organic passivation layer via a second vacuum evaporation process. At least a portion of the inorganic sulfide layer covers the organic passivation layer. The deposition rate of the inorganic sulfide is [value missing]. The interface passivation layer obtained by the above-described sequential deposition method can better control the thickness of the organic passivation layer and the inorganic sulfide layer.

[0128] In some embodiments, the ratio of the thickness of the inorganic sulfide layer to the thickness of the organic passivation layer is 100:1 to 1:100, and more preferably 6:1 to 1:10.

[0129] In some implementations, the thickness of the interface passivation layer is 0.1 nm to 10 nm, and can be selected as 2 nm to 6 nm or 0.5 nm to 3 nm, so as to minimize the impact of the interface passivation layer on carrier transport while passing off interface defects.

[0130] In some embodiments, the surface pressure vacuum levels of the co-deposition, the first vacuum evaporation, and the second vacuum evaporation are each independently no greater than 4.0 × 10⁻⁶. -4 Pa.

[0131] In some embodiments, the inorganic sulfide includes one or more of PbS, Bi2S3, MnS, CdS, HgS, Ag2S, ZnS, Na2S, and FeS.

[0132] In some embodiments, for organic passivators H2N-R 1 -NH2·(HX)2,R 1 Including any one of C2-C4 alkylene groups, and / or, X includes Cl, Br, or I.

[0133] In some implementations, H2N-R 1 -NH2·(HX)2 includes any one or more of dimethylamine hydroiodide (DMAI), dimethylamine hydrobromide (DMABr), dimethylamine hydrochloride (DMACl), ethylenediamine dihydroiodide (EDAI2), ethylenediamine dihydrochloride (EDACl2), and ethylenediamine hydrobromide (EDABr2).

[0134] In some implementations, R 2 It includes any one of substituted or unsubstituted 5- to 10-membered alicyclic groups or substituted or unsubstituted 5- to 10-membered aromatic heterocyclic groups.

[0135] In some implementations, R 2Includes any one of the following groups, whether substituted or unsubstituted: pyrrole, tetrahydrofuran, imidazoalkyl, oxazolyl, thiazoalkyl, piperazine, morpholino, piperidinyl, thiomorpholino, tetrahydropyran, furan, thiophene, pyrrole, thiazolyl, thiadiazol, imidazolyl, pyridinyl, pyrazine, pyrimidinyl, pyridazine, indolyl, quinolino, pteridinyl, acridinel, and optionally any one of the following groups, whether substituted or unsubstituted: piperazine, piperidinyl, thiazolyl, or thiadiazolyl.

[0136] In some implementations, R 2 The substituents include any one of C1-C3 alkyl, amino-substituted C1-C3 alkyl, halogen-substituted C1-C3 alkyl, amino, cyano, and halogen; optionally, X includes Cl, Br, or I.

[0137] In some implementations, R 2 ·(HX)n includes any one of piperazine monohydroiodide (PI), piperazine dihydroiodide (PDI), piperazine monohydrobromide (PBr), piperazine dihydrobromide (PDBr), 2-methyl-1,3,4-thiadiazole hydrochloride, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, (1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, and 5-chloro-1,3,4-thiadiazole-2-carboxaldehyde hydrochloride.

[0138] In some embodiments, the substituted thiadiazole compound includes any one of 2,5-dimethylthiadiazole, (1,3,4-thiadiazole-2-yl)methanol, 2-amino-5-methyl-1,3,4-thiadiazole, 2-chloromethyl-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-iodo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-(difluoromethyl)-2-amino-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, 2-amino-1,3,4-thiadiazole-5-methanol, 5-bromo-2-cyano-1,3,4-thiadiazole, and 5-(fluoromethyl)-1,3,4-thiadiazole-2-amine.

[0139] In some implementations, Ar-R 3 In NH3·X and Ar-N(CH3)3·X, Ar includes substituted or unsubstituted phenyl groups, optionally phenyl or fluorophenyl; optionally, R 3 Including any one of C1-C3 alkylene groups, where X includes Cl, Br, or I.

[0140] In some implementations, Ar-R 3NH3·X includes one or more of phenylethyl ammonium iodide (PEAI), 4-fluorophenylethyl ammonium iodide (F-PEAI), and 3-fluorophenylethyl ammonium iodide (mF-PEAI).

[0141] In some embodiments, Ar-N(CH3)3·X includes one or more of phenyltrimethylammonium chloride (PTACl), phenyltrimethylammonium bromide (PTABr), and phenyltrimethylammonium iodide (PTAI).

[0142] In some embodiments, the inorganic sulfide includes one or more of PbS and CdS; the organic passivator includes ethylenediamine dihydroiodate (EDAI2) and ethylenediamine dihydrochloride (EDAC1). 2) Ethylenediamine hydrobromide (EDABr2), piperazine monohydroiodide (PI), piperazine dihydroiodide (PDI), phenylethyl ammonium iodide (PEAI), 4-fluorophenylethyl ammonium iodide (F-PEAI), 3-fluorophenylethyl ammonium iodide (mF-PEAI), (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, 2-amino-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, or 2-amino-1,3,4-thiadiazole-5-methanol.

[0143] The perovskite solar cell fabrication method provided in this application can be prepared using conventional techniques in the art for the processes of preparing the hole transport layer, preparing the perovskite light-absorbing layer, preparing the electron transport layer, and preparing the back electrode.

[0144] In some embodiments, the above-mentioned method for preparing perovskite solar cells further includes the following steps: cleaning the transparent conductive substrate sequentially with acetone, alcohol, and deionized water, and drying it; spin-coating a precursor solution of hole transport layer material onto the transparent conductive substrate, and then annealing it to obtain a hole transport layer; and preparing the perovskite light-absorbing layer by spin-coating the perovskite precursor solution onto the hole transport layer, and then annealing it to obtain a perovskite light-absorbing layer.

[0145] In some embodiments, when spin-coating the hole transport layer material onto the conductive substrate, the spin-coating speed is 2800 rpm to 3200 rpm and the spin-coating time is 25 s to 35 s.

[0146] In some embodiments, after spin coating at a speed R1 for a time t1, spin coating is performed at a speed R2 for a time t2, where R2 > R1. Optionally, the spin coating speed R1 is 1500 rpm and the spin coating time t1 is 10 s; the spin coating speed R2 is 4000 rpm and the spin coating time t2 is 40 s.

[0147] In some embodiments, when spin-coating at a spin-coating speed R2, 320 μL to 360 μL of ethyl acetate is added dropwise during the 27th to 33rd second of spin-coating.

[0148] In some embodiments, the annealing process after spin-coating the hole transport layer includes annealing at 150°C for 20 to 30 minutes, and the annealing process after spin-coating the perovskite light-absorbing layer includes annealing at 100°C for 10 minutes.

[0149] For example, the precursor solution of the hole transport layer material is a PEDOT:PSS solution.

[0150] For example, the perovskite precursor solution includes a solute and a solvent, the solute including a metal halide and / or an organohalide, and the solvent selected from one or more of dimethylimide (DMF), γ-butyrolactone (GBL), and dimethyl sulfoxide (DMSO); optionally, the solvent includes DMF and DMSO in a volume ratio of 3:1.

[0151] In some embodiments, after obtaining the interface passivation film, an electron transport layer and a back electrode are sequentially deposited by vacuum evaporation.

[0152] This application also provides an electrical device, which includes any of the perovskite solar cells described in the first embodiment, or any perovskite solar cell prepared by any of the methods described in the second embodiment. In operation, sunlight shines from the transparent conductive film of the perovskite solar cell into the perovskite light-absorbing layer. The light-absorbing layer is excited to generate electron-hole pairs, which diffuse to the interface and separate to form free electrons and holes. These free electrons and holes are then transported to the corresponding electrodes via the electron / hole transport layer for collection.

[0153] The perovskite solar cell provided in this application can be used as a power source for electrical devices; alternatively, the perovskite solar cell can also be used as an energy storage unit for electrical devices. For example, the electrical device can be a lighting element, a display element, or a vehicle, etc.

[0154] The technical solutions described in the embodiments of this application are applicable to perovskite light-absorbing layers, perovskite solar cells, and electrical devices. The perovskite solar cells disclosed in this application can be used in perovskite tandem solar cells, and can also be used in silicon-perovskite tandem solar cells; this application does not impose any limitations.

[0155] [Example]

[0156] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0157] Example 1

[0158] In this embodiment, the method for fabricating perovskite solar cells includes:

[0159] Processing transparent conductive substrates Commercially available FTO was used as a transparent conductive substrate. The substrate was cleaned sequentially with acetone, alcohol, and deionized water, and then dried for later use.

[0160] Preparation of hole transport layer Take 100 μL of PEDOT:PSS solution and drop it onto a transparent conductive substrate. Spin coat at 3000 rpm for 30 s. After spin coating, transfer the substrate to a hot plate at 150 °C and anneal for 20 minutes to form a hole transport layer with a thickness of 10 nm.

[0161] Preparation of perovskite light-absorbing layer 100 μL of perovskite precursor solution was dropped onto the hole transport layer described above, and spin-coated at 1500 rpm for 10 s. Then, the initial spin-coating speed was set to 4000 rpm, and spin-coating was performed for 40 s with an acceleration of 1000 rpm / s. At approximately 30 s, 350 μL of ethyl acetate was added dropwise. After spin-coating, the layer was transferred to a hot plate at 100 °C and annealed for 10 minutes to form a perovskite light-absorbing layer. The solutes in the perovskite precursor solution were 47 mg CsI, 186 mg FAI, 86 mg MAI, 415 mg PbI2, 335 mg SnI2, and 14 mg SnF2, and the solvent was a mixture of 1 mL DMF and DMSO with a DMF:DMSO ratio of 3:1, resulting in a CsI layer with a thickness of 850 nm. 0.1 FA 0.6 MA 0.3 Sn 0.5 Pb 0.5 I3 perovskite light-absorbing layer.

[0162] Preparation of interface passivation layer The transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked on it is placed in the vacuum chamber of a vacuum evaporation apparatus, and the vacuum is evacuated to a standard pressure vacuum of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 (ethylenediamine dihydroiodate, hereinafter the same) is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 0.2 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 0.2 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0163] Fabrication of electron transport layer and hole blocking layer C was deposited sequentially on the interface passivation layer using vacuum evaporation. 60 BCP, C 60 The deposition rate is With a thickness of 25 nm, the deposition rate of BCP is... With a thickness of 7nm, it forms an electron transport layer and a hole blocking layer;

[0164] Fabrication of back electrode Cu was deposited as the back electrode using vacuum evaporation on the electron transport layer, with an evaporation rate of... Thickness is 80nm;

[0165] Thus, a structurally complete perovskite solar cell can be obtained, and its photovoltaic performance can be tested.

[0166] Example 2

[0167] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 0.5 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 0.5 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0168] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0169] Example 3

[0170] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 1.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 1.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0171] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0172] Example 4

[0173] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 2.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 2.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0174] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0175] Example 5

[0176] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 5.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 5.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0177] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0178] Example 6

[0179] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 2.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 3.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0180] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0181] Example 7

[0182] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 0.5 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 3.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0183] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0184] Example 8

[0185] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 5.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 0.5 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0186] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0187] Example 9

[0188] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 5.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 1.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0189] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0190] Example 10

[0191] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 0.1 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 5.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0192] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0193] Example 11

[0194] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 5.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 0.1 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0195] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0196] Example 12

[0197] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 0.1 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 10nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0198] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0199] Example 13

[0200] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... To maintain stability, the substrate baffle was opened, a 10 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 0.1 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0201] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0202] Example 14

[0203] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing PI (piperazine monohydroiodate, hereinafter the same) is heated to 100℃ to form a PI evaporation source, and the PI deposition rate is... To maintain stability, the substrate baffle was opened, a 1.5 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing CdS was heated to 150 °C to form a CdS evaporation source, and the CdS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 3.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0204] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0205] Example 15

[0206] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing PEAI (phenylethyl ammonium iodide, hereinafter the same) is heated to 270℃ to form a PEAI evaporation source, and the PEAI deposition rate is... To maintain stability, the substrate baffle was opened, a 1.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing ZnS was heated to 250 °C to form a ZnS evaporation source, and the ZnS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 2.5nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0207] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0208] Example 16

[0209] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing 2-methyl-1,3,4-thiadiazole hydrochloride (CAS No.: 117889-63-1) was heated to 250°C to form an evaporation source. The deposition rate of 2-methyl-1,3,4-thiadiazole hydrochloride was... To maintain stability, the substrate baffle was opened, a 3.5 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 2.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0210] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0211] Example 17

[0212] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; A crucible containing 2-amino-5-methyl-1,3,4-thiadiazole (CAS No.: 108-33-8) was heated to 225°C to form an evaporation source. The deposition rate of 2-amino-5-methyl-1,3,4-thiadiazole was... To maintain stability, the substrate baffle was opened, a 3.0 nm organic passivation layer was deposited, and the substrate baffle was closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 2.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0213] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0214] Example 18

[0215] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, so that the EDAI2 deposition rate is To maintain stability, the crucible containing PI was heated to 100°C to form a PI evaporation source, resulting in a PI deposition rate of [value missing]. To maintain stability, the substrate baffle was opened, and a 2.0 nm organic passivation layer was deposited with a molar ratio of EDAI2 to PI of 5:1. The substrate baffle was then closed. Subsequently, the crucible containing PbS was heated to 570 °C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. And while maintaining stability, the substrate baffle is opened again to deposit a 2.0 nm inorganic sulfide layer, and the substrate baffle is closed to form an interface passivation layer;

[0216] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0217] Example 19

[0218] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, so that the EDAI2 deposition rate is To maintain stability, the crucible containing PbS was heated to 570°C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. While maintaining stability, the substrate baffle is opened, and a 2.0 nm organic-inorganic mixed passivation layer is deposited. The molar ratio of EDAI2 to PbS in the layer is 1:6. The substrate baffle is then closed to form an interface passivation layer.

[0219] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0220] Example 20

[0221] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, so that the EDAI2 deposition rate is To maintain stability, the crucible containing PbS was heated to 570°C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. While maintaining stability, the substrate baffle is opened, and a 2.0 nm organic-inorganic mixed passivation layer is deposited. The molar ratio of EDAI2 to PbS in the layer is 1:1. The substrate baffle is then closed to form an interface passivation layer.

[0222] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0223] Example 21

[0224] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, so that the EDAI2 deposition rate is To maintain stability, the crucible containing PbS was heated to 570°C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. While maintaining stability, the substrate baffle is opened, and a 2.0 nm organic-inorganic mixed passivation layer is deposited. The molar ratio of EDAI2 to PbS in the layer is 5:1. The substrate baffle is then closed to form an interface passivation layer.

[0225] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0226] Example 22

[0227] The difference between this embodiment and Embodiment 1 lies only in the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, so that the EDAI2 deposition rate is To maintain stability, the crucible containing PbS was heated to 570°C to form a PbS evaporation source, and the PbS deposition rate was [missing information]. While maintaining stability, the substrate baffle is opened, and a 2.0 nm organic-inorganic mixed passivation layer is deposited. The molar ratio of EDAI2 to PbS in the layer is 10:1. The substrate baffle is then closed to form an interface passivation layer.

[0228] The remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0229] Comparative Example 1

[0230] The difference between this comparative example and Example 1 is that the process of preparing the interface passivation layer is not included; the remaining steps in the perovskite solar cell preparation method are the same as in Example 1.

[0231] Comparative Example 2

[0232] The only difference between this comparative example and Example 1 is the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing EDAI2 is heated to 240℃ to form an EDAI2 evaporation source, and the EDAI2 deposition rate is... And keep it stable, open the substrate baffle, deposit a 0.2 nm organic passivation layer, close the substrate baffle, and form an interface passivation layer; the remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0233] Comparative Example 3

[0234] The only difference between this comparative example and Example 1 is the process of preparing the interface passivation layer. Specifically, the transparent conductive substrate with the hole transport layer and perovskite light-absorbing layer stacked thereon is placed in the vacuum chamber of a vacuum evaporation equipment, and the vacuum is evacuated to a standard pressure vacuum degree of 4.0 × 10⁻⁶. -4 Pa; The crucible containing PbS is heated to 570℃ to form a PbS evaporation source, and the PbS deposition rate is... And keep it stable, open the substrate baffle again, deposit a 0.2 nm inorganic sulfide layer, close the substrate baffle, and form an interface passivation layer; the remaining steps in the perovskite solar cell fabrication method are the same as in Example 1.

[0235] Comparative Example 4

[0236] The only difference between this comparative example and Comparative Example 2 is that a 10nm organic passivation layer is deposited and the substrate baffle is closed; the remaining steps in the perovskite solar cell fabrication method are the same as those in Comparative Example 2.

[0237] Comparative Example 5

[0238] The only difference between this comparative example and comparative example 3 is that a 10 nm inorganic sulfide layer is deposited and the substrate baffle is closed; the remaining steps in the perovskite solar cell fabrication method are the same as those in comparative example 3.

[0239] [Test Characterization Methods]

[0240] Interfacial passivation layer thickness measurement: The thickness of the film can be measured using a probing instrument (probe-type film thickness measuring instrument). The probing instrument has a measurement range of 0.1 nm to 1 mm and an accuracy of 0.1 nm. Alternatively, an atomic force microscope (AFM) can be used. For specific measurement methods, please refer to T / CSTM 00003-2019 "Two-dimensional material thickness measurement - atomic force microscopy method".

[0241] It should be noted that the interface passivation layer prepared by sequential deposition method has obvious stratification between inorganic sulfides and organic passivates, and the thickness of each layer of inorganic sulfides or organic passivates can be measured separately. However, the interface passivation layer prepared by dual-source evaporation co-deposition method does not have obvious stratification between inorganic sulfides and organic passivates, so the thickness of the interface passivation layer is measured as a whole.

[0242] Interfacial passivation layer composition analysis: Time-of-flight secondary ion mass spectrometry (TOF-SIMS) can be used to determine the two-dimensional and three-dimensional concentration distribution of elements, compounds, or organic molecules in the interfacial passivation layer; Energy dispersive X-ray spectroscopy (EDS) can also be used to characterize the elemental types and relative contents of multiple elements in the interfacial passivation layer by comparing the measured X-ray energy spectra with the standard energy spectra of known elements; For organic passivations, liquid chromatography-mass spectrometry (LC-MS) can be used to determine the types and contents of organic compound molecules by detecting the unique mass-to-charge ratios of different compound molecules.

[0243] Photovoltaic conversion efficiency (PCE) measurement: The test was conducted using a solar simulator from Guangyan, in accordance with the national standard IEC61215. Specifically, a crystalline silicon solar cell was used to correct the light intensity to achieve a solar intensity of AM 1.5. A photomask was installed on the perovskite solar cell under test, and the irradiance was 1000 W / m². 2 Under these conditions, the temperature of the perovskite solar cell was controlled using a temperature monitoring device to maintain the temperature of the sample at 30±5℃ during the measurement process. The scan interval voltage was set to 0.02V, and the scan interval time to 0.3s. The perovskite solar cell was connected to a digital source meter, and the forward and reverse scan current-voltage characteristics of the sample cell were measured under illumination. The maximum power point current J was recorded. m Maximum power point voltage V m Open circuit voltage V OC and short-circuit current J SC Photoelectric conversion efficiency PCE = J SC ·V OC ·FF / P in Fill factor FF = J m ×V m / V OC ×J SC , where P in It is the incident light power.

[0244] Battery stability testing: The perovskite solar cell was continuously subjected to maximum power point tracking (MPPT) under a standard solar simulator to track the change in its photoelectric conversion efficiency over aging time. The time required for its photoelectric conversion efficiency to decay to 80% of its initial efficiency was denoted as T. 80(Unit: hours) The magnitude of this parameter indicates the photostability of the perovskite solar cell, T 80 The larger the data, the higher the photostability.

[0245] The test results of photoelectric conversion efficiency and battery stability for each embodiment and comparative example are recorded in Table 1.

[0246] Table 1

[0247]

[0248]

[0249] Comparative Example 1 did not include an interface passivation layer in the fabrication of the perovskite solar cell. In contrast, Comparative Example 2, which only included a 0.2 nm thick organic passivation layer, was prone to aging due to the reaction of the perovskite light-absorbing layer with water vapor, significantly affecting stability. Similarly, compared to Comparative Example 1, Comparative Example 3, which only included a 0.2 nm thick inorganic sulfide layer, could not effectively reduce the interface and surface defect state density, resulting in extremely limited improvement in fill factor and photoelectric conversion efficiency. Therefore, it is evident that, through the combined effect of inorganic sulfides and organic passivators in the interface passivation layer, the embodiments of this application can simultaneously improve photoelectric conversion efficiency and photovoltaic performance stability.

[0250] The interface passivation layers in Examples 1 to 5 were all prepared using a sequential deposition method, and the thickness ratio of the inorganic sulfide layer to the organic passivation layer was maintained at 1:1. Under this premise, comparisons show that as the thickness of the interface passivation layer increases, the photoelectric conversion efficiency and stability parameter T of the perovskite solar cell also increase. 80 Both showed a trend of first increasing and then decreasing. The reason may be that, on the one hand, when the thickness of the interface passivation layer is low, the passivation effect of interface defects is insufficient, and interface / surface defect states still exist. These states recombine with charge carriers nonradiatively, resulting in limited improvement in charge carrier collection efficiency, which in turn reduces photoelectric conversion efficiency and T. 80 The improvement in duration is limited; on the other hand, when the thickness of the interface passivation layer is high, the carrier transport distance increases and the carrier scattering probability increases, which will affect the photoelectric conversion efficiency and T. 80 The duration has been further increased.

[0251] When the interface passivation layer is prepared using a sequential deposition method, the thickness ratio of the inorganic sulfide layer to the organic passivation layer can be in the range of 100:1 to 1:100, all of which exhibit excellent results, as shown in the photovoltaic performance measurement results of Examples 6 to 13 in Table 1. When the thickness ratio of the inorganic sulfide layer to the organic passivation layer is 6:1 to 1:10, the improvement in photoelectric conversion efficiency (PCE) is more significant, and a more balanced overall improvement in the photovoltaic performance and stability of perovskite solar cells can be achieved.

[0252] Furthermore, the measurement results of Example 18 show that when the organic passivation layer includes both ethylenediamine halide salts and piperazine halide salts, the improvement effect on the photovoltaic performance and stability of perovskite solar cells is better than that of using only one type of organic passivation material.

[0253] Examples 19 to 22 of this application employ a co-deposition method to prepare the interface passivation layer. By controlling the deposition rate of organic passivation materials or inorganic sulfides, interface passivation layers with different doping ratios of inorganic sulfides and organic passivation materials can be obtained. When the doping ratio of inorganic sulfides to organic passivation materials is in the range of 6:1 to 1:10, the PCE and T of the perovskite solar cell are... 80 The duration of both events has been effectively improved.

[0254] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A perovskite solar cell, comprising a first electrode, a perovskite light-absorbing layer, an interface passivation layer, and a second electrode, wherein, The interface passivation layer includes inorganic sulfides and organic passivations. The cationic elements in the inorganic sulfide include any one or more of Pb, Bi, Mn, Cd, Hg, Ag, Zn, Na, or Fe; The organic passivator includes one or more of organohalides and heteroaryl compounds, the organohalides including H2N-R 1 -NH2·(HX)2、R 2 (HX) n Ar-R 3 Any one or more of NH3·X and Ar-N(CH3)3·X, R 1 Including any one of C1-C6 alkylene groups; R 2 Includes any one of substituted or unsubstituted 5- to 20-membered alicyclic groups or substituted or unsubstituted 5- to 20-membered aromatic heterocyclic groups; the R 2 The substituents in the compound and the substituents in the heteroaryl compound each independently include any one of C1-C6 alkyl, amino, cyano, halogen, amino-substituted C1-C6 alkyl, and halogen-substituted C1-C6 alkyl, where n is 1 or 2; each Ar independently includes a substituted or unsubstituted C6-C10 aryl group; the R 3 The compounds include any one of C1-C6 alkylene groups, each X independently comprising F, Cl, Br or I; the heteroaryl compounds include substituted thiadiazole compounds.

2. The perovskite solar cell according to claim 1, wherein, The inorganic sulfides include one or more of PbS, Bi2S3, MnS, CdS, HgS, Ag2S, ZnS, Na2S, and FeS.

3. The perovskite solar cell according to claim 1 or 2, wherein, The H2N-R 1 In -NH2·(HX)2, R 1 Including any one of C2-C4 alkylene groups, and / or X including Cl, Br or I.

4. The perovskite solar cell according to claim 1 or 2, wherein, The H2N-R 1 -NH2·(HX)2 includes any one or more of dimethylamine hydroiodate, dimethylamine hydrobromide, dimethylamine hydrochloride, ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, and ethylenediamine hydrobromide.

5. The perovskite solar cell according to any one of claims 1 to 4, wherein, The R 2 (HX) n In the middle, R 2 It includes any one of substituted or unsubstituted 5- to 10-membered alicyclic groups, substituted or unsubstituted 5- to 10-membered aromatic heterocyclic groups, and / or, X includes Cl, Br, or I.

6. The perovskite solar cell according to claim 5, wherein, The R 2 Includes any one of the following groups, whether substituted or unsubstituted: pyrrole, tetrahydrofuranyl, imidazoalkyl, oxazolyl, thiazoalkyl, piperazine, morpholinyl, piperidinyl, thiomorpholinyl, tetrahydropyranyl, furanyl, thiophene, pyrrole, thiazolyl, thiadiazolyl, imidazolyl, pyridinyl, pyrazine, pyrimidinyl, pyridazine, indolyl, quinolinyl, pteridinyl, or acridineyl, and may be optionally any one of the following groups, whether substituted or unsubstituted: piperazine, piperidinyl, thiazolyl, or thiadiazolyl.

7. The perovskite solar cell according to claim 5 or 6, wherein, The R 2 The substituents include any one or more of the following: C1-C3 alkyl, amino-substituted C1-C3 alkyl, halogen-substituted C1-C3 alkyl, cyano, halogen, and amino.

8. The perovskite solar cell according to any one of claims 1 to 4, wherein, The R 2 (HX) n It includes any one or more of piperazine monohydroiodate, piperazine dihydroiodate, piperazine monohydrobromide, piperazine dihydrobromide, 2-methyl-1,3,4-thiadiazole hydrochloride, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, (1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, and 5-chloro-1,3,4-thiadiazole-2-carboxaldehyde hydrochloride.

9. The perovskite solar cell according to any one of claims 1 to 8, wherein, The substituted thiadiazole compounds include any one or more of 2,5-dimethylthiadiazole, (1,3,4-thiadiazole-2-yl)methanol, 2-amino-5-methyl-1,3,4-thiadiazole, 2-chloromethyl-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-iodo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-(difluoromethyl)-2-amino-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, 2-amino-1,3,4-thiadiazole-5-methanol, 5-bromo-2-cyano-1,3,4-thiadiazole, and 5-(fluoromethyl)-1,3,4-thiadiazole-2-amine.

10. The perovskite solar cell according to any one of claims 1 to 9, wherein, The Ar-R 3 The Ar in NH3·X and Ar-N(CH3)3·X each independently includes a substituted or unsubstituted phenyl group, which may be phenyl or fluorophenyl.

11. The perovskite solar cell according to any one of claims 1 to 10, wherein, The Ar-R 3 R in NH3·X 3 It includes any one of C1-C3 alkylene groups, and each X independently includes Cl, Br or I.

12. The perovskite solar cell according to any one of claims 1 to 9, wherein, The Ar-R 3 NH3·X includes one or more of phenylethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, or 3-fluorophenylethyl ammonium iodide.

13. The perovskite solar cell according to any one of claims 1 to 9, wherein, The Ar-N(CH3)3·X includes one or more of phenyltrimethylammonium chloride, phenyltrimethylammonium bromide, and phenyltrimethylammonium iodide.

14. The perovskite solar cell according to any one of claims 1 to 13, wherein, The inorganic sulfides include one or more of PbS and CdS; the organic passivators include one or more of ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, ethylenediamine hydrobromide, piperazine monohydroiodate, piperazine dihydroiodate, phenylethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, 3-fluorophenylethyl ammonium iodide, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, 2-amino-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, or 2-amino-1,3,4-thiadiazole-5-methanol.

15. The perovskite solar cell according to any one of claims 1 to 14, wherein, At least a portion of the interface passivation layer comprises a mixture of the inorganic sulfide and the organic passivation material, and the thickness of the interface passivation layer is 0.1 nm to 10 nm, optionally 2 nm to 6 nm.

16. The perovskite solar cell according to any one of claims 1 to 14, wherein, In at least a portion of the interface passivation layer, organic passivants and inorganic sulfides are sequentially disposed in a direction away from the perovskite light-absorbing layer to form an organic passivation layer and an inorganic sulfide layer, wherein at least a portion of the inorganic sulfides cover the organic passivants.

17. The perovskite solar cell according to claim 16, wherein, The thickness of the organic passivation layer is 0.1 nm to 10 nm, and can be selected as 0.5 nm to 3 nm.

18. The perovskite solar cell according to claim 16 or 17, wherein, The thickness of the inorganic sulfide layer is 0.1 nm to 10 nm, and can be selected as 0.5 nm to 5 nm.

19. The perovskite solar cell according to any one of claims 16 to 18, wherein, The ratio of the thickness of the inorganic sulfide layer to the thickness of the organic passivation layer is 100:1 to 1:100, and can be selected as 6:1 to 1:

10.

20. The perovskite solar cell according to any one of claims 1 to 19, wherein, The mass ratio of the inorganic sulfide to the organic passivator is 200:1 to 1:

200.

21. The perovskite solar cell according to any one of claims 1 to 20, wherein, The perovskite light-absorbing layer comprises a perovskite material, the chemical formula of which is ABX'3, where B includes Pb. 2+ Sn 2+ Cd 2+ 、Ge 2+ One or more of the following, where X' is a halide ion or a halide-like ion, and A is an organic cation and / or an inorganic cation.

22. The perovskite solar cell according to claim 21, wherein, X' includes I - ,Br - Cl - SCN - One or more of them.

23. The perovskite solar cell according to claim 21 or 22, wherein, A includes Cs + 、Rb + CH3NH3 + HC(NH2)2 + One or more of them.

24. The perovskite solar cell according to any one of claims 1 to 23, wherein, The electrode materials of the first electrode and the second electrode include one or more of organic conductive materials, inorganic conductive materials, or organic-inorganic conductive composite materials.

25. The perovskite solar cell according to any one of claims 1 to 24, wherein, The perovskite solar cell further includes a first charge transport layer and a second charge transport layer. The first charge transport layer is disposed between the first electrode and the perovskite light-absorbing layer, and the second charge transport layer is disposed between the passivation layer and the second electrode. One of the first charge transport layer and the second charge transport layer is an electron transport layer and the other is a hole transport layer.

26. A method for fabricating a perovskite solar cell, the method comprising a process of fabricating an interface passivation layer on a perovskite light-absorbing layer, wherein, The process of preparing the interface passivation layer includes: Organic passivants and inorganic sulfides are deposited on the perovskite light-absorbing layer to form an interface passivation layer; The cationic elements in the inorganic sulfide include any one or more of Pb, Bi, Mn, Cd, Hg, Ag, Zn, Na, or Fe; The organic passivator includes one or more of organohalides and heteroaryl compounds, the organohalides including H2N-R 1 -NH2·(HX)2、R 2 (HX) n Ar-R 3 Any one or more of NH3·X and Ar-N(CH3)3·X, R 1 Including any one of C1-C6 alkylene groups; R 2 Includes any one of substituted or unsubstituted 5- to 20-membered alicyclic groups or substituted or unsubstituted 5- to 20-membered aromatic heterocyclic groups; the R 2 The substituents in the compound and the substituents in the heteroaryl compound each independently include any one of C1-C6 alkyl, amino-substituted C1-C6 alkyl, halogen-substituted C1-C6 alkyl, amino, cyano, and halogen, where n is 1 or 2; each Ar independently includes a substituted or unsubstituted C6-C10 aryl group; the R 3 The compounds include any one of C1-C6 alkylene groups, each X independently comprising F, Cl, Br or I; the heteroaryl compounds include substituted thiadiazole compounds.

27. The preparation method according to claim 26, wherein, The process of preparing the interface passivation layer includes: The inorganic sulfide and the organic passivation were respectively subjected to vacuum evaporation to obtain gaseous inorganic sulfide and gaseous organic passivation, respectively. The gaseous inorganic sulfide and the gaseous organic passivation are co-deposited on the perovskite light-absorbing layer to obtain the interface passivation layer. The deposition rates of the gaseous inorganic sulfide and the gaseous organic passivation are each independent.

28. The preparation method according to claim 27, wherein, The deposition rate ratio of the gaseous inorganic sulfide to the gaseous organic passivation is 6:1 to 1:

10.

29. The preparation method according to claim 26, wherein, The process of preparing the interface passivation layer includes: The organic passivation material is deposited on the perovskite light-absorbing layer by a first vacuum evaporation to form an organic passivation layer, wherein the deposition rate of the organic passivation material is [missing information]. The inorganic sulfide is deposited on the perovskite light-absorbing layer containing the organic passivation material using a second vacuum evaporation process to form an inorganic sulfide layer, wherein at least a portion of the inorganic sulfide layer covers the organic passivation layer, and the deposition rate of the inorganic sulfide is [value missing].

30. The preparation method according to claim 29, wherein, The ratio of the thickness of the inorganic sulfide layer to the thickness of the organic passivation layer is 100:1 to 1:100, and can be selected as 6:1 to 1:

10.

31. The preparation method according to any one of claims 26 to 30, wherein, The thickness of the interface passivation layer is 0.1 nm to 10 nm, and can be selected as 2 nm to 6 nm.

32. The preparation method according to any one of claims 26 to 31, wherein, The mass ratio of the inorganic sulfide to the organic passivator is 200:1 to 1:

200.

33. The preparation method according to any one of claims 27 to 32, wherein, The surface pressure vacuum levels of the co-deposition, the first vacuum evaporation, and the second vacuum evaporation are each independently no greater than 4.0 × 10⁻⁶. -4 Pa.

34. The preparation method according to any one of claims 26 to 33, wherein, The inorganic sulfides include one or more of PbS, Bi2S3, MnS, CdS, HgS, Ag2S, ZnS, Na2S, and FeS.

35. The preparation method according to any one of claims 26 to 34, wherein, The H2N-R 1 In -NH2·(HX)2, R 1 Including any one of C2-C4 alkylene groups, and / or, X includes Cl, Br, or I.

36. The preparation method according to any one of claims 26 to 35, wherein, The H2N-R 1 -NH2·(HX)2 includes any one or more of dimethylamine hydroiodate, dimethylamine hydrobromide, dimethylamine hydrochloride, ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, and ethylenediamine hydrobromide.

37. The preparation method according to any one of claims 26 to 36, wherein, The R 2 (HX) n In the middle, R 2 It includes any one of substituted or unsubstituted 5- to 10-membered alicyclic groups, substituted or unsubstituted 5- to 10-membered aromatic heterocyclic groups, and / or, X includes Cl, Br, or I.

38. The preparation method according to claim 37, wherein, The R 2 Includes any one of the following groups, whether substituted or unsubstituted: pyrrole, tetrahydrofuranyl, imidazoalkyl, oxazolyl, thiazoalkyl, piperazine, morpholinyl, piperidinyl, thiomorpholinyl, tetrahydropyranyl, furanyl, thiophene, pyrrole, thiazolyl, thiadiazolyl, imidazolyl, pyridinyl, pyrazine, pyrimidinyl, pyridazine, indolyl, quinolinyl, pteridinyl, or acridineyl, and may be optionally any one of the following groups, whether substituted or unsubstituted: piperazine, piperidinyl, thiazolyl, or thiadiazolyl.

39. The preparation method according to claim 37 or 38, wherein, The R 2 The substituents include any one of C1-C3 alkyl, amino-substituted C1-C3 alkyl, halogen-substituted C1-C3 alkyl, cyano, halogen, and amino.

40. The preparation method according to any one of claims 26 to 39, wherein, The R 2 ·(HX)n includes any one of piperazine monohydroiodate, piperazine dihydroiodate, piperazine monohydrobromide, piperazine dihydrobromide, 2-methyl-1,3,4-thiadiazole hydrochloride, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, (1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, and 5-chloro-1,3,4-thiadiazole-2-carboxaldehyde hydrochloride.

41. The preparation method according to any one of claims 26 to 40, wherein, The substituted thiadiazole compounds include any one of 2,5-dimethylthiadiazole, (1,3,4-thiadiazole-2-yl)methanol, 2-amino-5-methyl-1,3,4-thiadiazole, 2-chloromethyl-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-iodo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-(difluoromethyl)-2-amino-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, 2-amino-1,3,4-thiadiazole-5-methanol, 5-bromo-2-cyano-1,3,4-thiadiazole, and 5-(fluoromethyl)-1,3,4-thiadiazole-2-amine.

42. The preparation method according to any one of claims 26 to 41, wherein, The Ar-R 3 In NH3·X and Ar-N(CH3)3·X, each Ar independently includes a substituted or unsubstituted phenyl group, which may be phenyl or fluorophenyl.

43. The preparation method according to any one of claims 26 to 42, wherein, The R 3 Including any one of C1-C3 alkylene groups, and / or, X includes Cl, Br or I.

44. The preparation method according to any one of claims 26 to 43, wherein, The Ar-R 3 NH3·X includes one or more of phenylethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, and 3-fluorophenylethyl ammonium iodide.

45. The preparation method according to any one of claims 26 to 44, wherein, The Ar-N(CH3)3·X includes one or more of phenyltrimethylammonium chloride, phenyltrimethylammonium bromide, and phenyltrimethylammonium iodide.

46. ​​The preparation method according to any one of claims 26 to 45, wherein, The inorganic sulfides include one or more of PbS and CdS; the organic passivators include one or more of ethylenediamine dihydroiodate, ethylenediamine dihydrochloride, ethylenediamine hydrobromide, piperazine monohydroiodate, piperazine dihydroiodate, phenylethyl ammonium iodide, 4-fluorophenylethyl ammonium iodide, 3-fluorophenylethyl ammonium iodide, (5-methyl-1,3,4-thiadiazole-2-yl)methylamine hydrochloride, 1,3,4-thiadiazole-2-carboximide hydrochloride, 2-amino-5-methyl-1,3,4-thiadiazole, 2-bromo-5-methyl-1,3,4-thiadiazole, 2-(trifluoromethyl)-1,3,4-thiadiazole, 5-methyl-1,3,4-thiadiazole-2-carboxylic acid, or 2-amino-1,3,4-thiadiazole-5-methanol.

47. An electrical appliance, wherein, The electrical device includes a perovskite solar cell according to any one of claims 1 to 25, or includes a perovskite solar cell obtained by the preparation method according to any one of claims 26 to 46.

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