Beta-gallium oxide thin film and method for manufacturing the same
By forming atomic-level steps and metal layers on the substrate surface, combined with molecular beam or pulsed laser epitaxy, and using ozone or oxygen plasma as an oxygen source, the problem of growing β-gallium oxide thin films under high temperature and high pressure was solved, and high-quality β-gallium oxide thin films were prepared, improving the crystallinity of the films and reducing the carbon content.
CN122161346APending Publication Date: 2026-06-05SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
- Filing Date
- 2025-12-29
- Publication Date
- 2026-06-05
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Figure CN122161346A_ABST
Abstract
The application discloses a kind of beta-gallium oxide film and its preparation method, the preparation method includes the following steps: providing substrate, the substrate includes oppositely arranged first surface and second surface;Preparation metal layer on the second surface;Providing oxygen source and gallium source, by molecular beam epitaxy process or pulse laser epitaxy process on the first surface preparation beta-gallium oxide film, the oxygen source is ozone or oxygen plasma.The application is by preparing metal layer on the second surface of substrate, with ozone or oxygen plasma as oxygen source, in combination with molecular beam epitaxy process or pulse laser epitaxy process, successfully on the first surface of substrate preparation high crystallinity, low carbon content high-quality beta-gallium oxide film.
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