A cooling chamber with controllable cooling rate, semiconductor device and temperature control method

Abstract

The present application relates to wafer processing equipment technical field, especially to a cooling rate controllable cooling chamber, semiconductor equipment and temperature control method, including cooling chamber, temperature sensing piece, pressure regulating piece and control piece, cooling chamber is communicated with the cooling gas source of external equipment, temperature sensing piece is arranged in the cooling chamber, pressure regulating piece is communicated with the cooling chamber, control piece is connected with temperature sensing piece and pressure regulating piece communication, control piece obtains real-time cooling rate according to real-time temperature, and based on the comparison result of real-time cooling rate and preset cooling rate, drives pressure regulating piece to adjust the air pressure in the cooling chamber, so that the real-time cooling rate meets the requirement of the preset cooling rate, the present application acquires wafer temperature in real time through setting temperature sensing piece, control piece calculates real-time cooling rate accordingly, and compares with preset cooling rate, and then drives pressure regulating piece to adjust the air pressure in the cooling chamber.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and in particular to a cooling chamber with controllable cooling rate, semiconductor equipment, and temperature control method. Background Technology

[0002] In semiconductor manufacturing, wafers after high-temperature processes need to be cooled in cooling chambers. Current technologies typically employ passive cooling methods under vacuum, atmospheric pressure, or constant pressure, resulting in a fixed and uncontrollable cooling rate. This leads to two main drawbacks: First, excessively rapid cooling rates can generate excessive thermal stress within the wafer, easily causing wafer breakage (especially in large, thin wafers), resulting in material waste. Second, uncontrollable cooling rates affect the stress and quality of the wafer surface coating, leading to product yield losses. Conversely, excessively slow cooling rates also result in low production efficiency. Therefore, existing cooling technologies cannot meet the requirements for process consistency, high yield, and low breakage rates. Summary of the Invention

[0003] This invention provides a cooling chamber with controllable cooling rate, a semiconductor device, and a temperature control method. The purpose is to avoid the risk of thermal stress cracking of wafers caused by excessively rapid cooling, thereby improving process reliability and reducing the breakage rate. On the other hand, through controllable and uniform cooling, the stress state and crystal quality of the wafer surface film can be better controlled, thereby improving product consistency and yield.

[0004] To achieve the above objectives, the present invention provides a cooling chamber with controllable cooling rate, comprising a cooling chamber, a temperature sensor, a pressure regulator, and a control unit; The cooling chamber is equipped with a support platform for supporting the wafer and is connected to an external cooling gas source to input cooling gas for cooling the wafer into the cooling chamber. The temperature sensor is located in the cooling chamber and is used to collect the real-time temperature of the wafer. The pressure regulating component is connected to the cooling chamber to regulate the pressure inside the cooling chamber; The control unit is communicatively connected to the temperature sensor and the pressure regulator. The control unit obtains the real-time cooling rate of the wafer based on the real-time temperature, and drives the pressure regulator to adjust the air pressure in the cooling chamber based on the comparison result of the real-time cooling rate and the preset cooling rate, so that the real-time cooling rate meets the requirements of the preset cooling rate.

[0005] Optionally, the preset cooling rate is a target range, and the target range includes an upper limit value and a lower limit value; When the comparison result indicates that the real-time cooling rate is lower than the lower limit of the rate, the control unit drives the pressure regulating unit to increase the air pressure in the cooling chamber to increase the real-time cooling rate of the wafer. When the comparison result indicates that the real-time cooling rate is higher than the upper limit of the rate, the control unit drives the pressure regulating unit to decrease the air pressure in the cooling chamber to decrease the real-time cooling rate of the wafer.

[0006] Optionally, the pressure regulating component includes an exhaust valve and a vacuum pump connected to an exhaust pipe, the exhaust pipe being connected to the cooling chamber, and the control component coordinating the control of the pressure within the cooling chamber by adjusting the opening of the exhaust valve and the pumping speed of the vacuum pump respectively. And / or the pressure regulating component further includes an intake valve, which is disposed on the connecting pipe between the cooling gas source and the cooling chamber. The intake valve is communicatively connected to the control component, which controls the pressure in the cooling chamber by adjusting the opening of the intake valve.

[0007] Optionally, a pressure sensor is installed in the cooling chamber, and the pressure sensor is communicatively connected to the control component to monitor the pressure in the cooling chamber in real time and feed back the pressure information to the control component.

[0008] Optionally, the number of temperature sensors is set to several, and the several temperature sensors are distributed on the inner side wall of the cooling chamber and / or the upper surface of the support platform to collect the real-time temperature of the wafer at multiple points. The control unit obtains several real-time cooling rates based on the several real-time temperatures, and selects the highest or lowest real-time cooling rate to compare with the preset cooling rate to obtain the comparison result.

[0009] Optionally, the inner sidewall and / or inner top wall of the cooling chamber are provided with a temperature regulating plate, and the temperature regulating plate is provided with a medium flow channel for introducing a constant temperature heat-conducting medium, so as to maintain or regulate the inner wall temperature of the cooling chamber by maintaining or regulating the temperature of the temperature regulating plate.

[0010] Optionally, the support platform has an integrated cooling channel inside, which is connected to an external coolant circulation system to work in conjunction with the cooling gas to cool the wafer.

[0011] Optionally, the cooling channel includes a first sub-cooling channel and a second sub-cooling channel, and the coolant circulation system includes a first coolant source and a second coolant source; The first sub-cooling channel is located in the inner ring area of ​​the support platform corresponding to the center area of ​​the wafer and is connected to the first coolant source. The second sub-cooling channel is located in the outer ring area of ​​the support platform corresponding to the edge area of ​​the wafer and is connected to the second coolant source. Both the first coolant source and the second coolant source are communicatively connected to the control unit. The control unit adjusts the temperature of the coolant in the first coolant source and the temperature of the coolant in the second coolant source based on the comparison result, so as to achieve independent cooling and temperature control for the central region and the edge region of the wafer, respectively.

[0012] Optionally, the preset cooling rate includes a first cooling rate and a second cooling rate, and the real-time cooling rate includes a first real-time cooling rate corresponding to the center region of the wafer and a second real-time cooling rate corresponding to the edge region of the wafer. The control unit drives the pressure regulating unit to adjust the air pressure in the cooling chamber based on a first comparison result obtained by comparing the first cooling rate with the first real-time cooling rate, and a second comparison result obtained by comparing the second cooling rate with the second real-time cooling rate. Based on the first comparison result, the control unit adjusts the temperature of the coolant in the first coolant source, and based on the second comparison result, the control unit adjusts the temperature of the coolant in the second coolant source.

[0013] Optionally, the cooling chamber with controllable cooling rate further includes a first split air channel and a second split air channel. The first split air channel is connected to the cooling gas source and its outlet faces the central region of the wafer. The second split air channel is connected to the cooling gas source and its outlet faces the edge region of the wafer, so as to adjust the air pressure in the central region and the edge region of the wafer by controlling the gas flow rate in the first split air channel and the second split air channel, respectively.

[0014] To achieve the above objectives, the present invention also provides a semiconductor device, including a process chamber, a robotic arm, and a cooling chamber with a controllable cooling rate, wherein the robotic arm is used to transfer wafers between the process chamber and the cooling chamber with a controllable cooling rate.

[0015] To achieve the above objectives, the present invention also provides a temperature control method for a cooling chamber with a controllable cooling rate, applied to the aforementioned cooling chamber with a controllable cooling rate, the temperature control method comprising the following steps: S1: Set the preset cooling rate; S2: During the wafer cooling process, real-time temperature information of the wafer inside the cooling chamber is collected through temperature sensors; S3: The control unit calculates the real-time cooling rate based on the real-time temperature information; S4: Based on the comparison result between the real-time cooling rate and the preset cooling rate, the control component drives the pressure regulating component to adjust the air pressure in the cooling chamber so that the real-time cooling rate meets the requirements of the preset cooling rate.

[0016] Optionally, in step S4, the step of the control component driving the pressure regulating component to adjust the air pressure in the cooling chamber based on the comparison result of the real-time cooling rate and the preset cooling rate includes: When the comparison result shows that the real-time cooling rate is lower than the preset cooling rate lower limit, the control unit drives the pressure regulating unit to increase the air pressure in the cooling chamber to accelerate the cooling efficiency. When the comparison result shows that the real-time cooling rate is higher than the upper limit of the preset cooling rate, the controller drives the pressure regulator to reduce the air pressure in the cooling chamber to reduce the cooling efficiency.

[0017] Optionally, the preset cooling rate is set according to the material, thickness, or surface film characteristics of the wafer.

[0018] The beneficial effects of this invention are as follows: This invention achieves active and precise control of the wafer cooling rate by using a temperature sensor to collect the wafer temperature in real time, and then using the controller to calculate the real-time cooling rate and compare it with a preset cooling rate. This, in turn, drives a pressure regulator to adjust the air pressure in the cooling chamber. This setup allows the wafer cooling rate to be stabilized within a preset ideal range. On the one hand, it avoids the risk of thermal stress cracking caused by excessively rapid cooling, improving process reliability and reducing the breakage rate. On the other hand, through controllable and uniform cooling, it is possible to better control the stress state and crystal quality of the wafer surface film, thereby improving product consistency and yield. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the cooling chamber with controllable cooling rate in an embodiment of the present invention; Figure 2 This is a flowchart of a temperature control method for a cooling chamber with controllable cooling rate in an embodiment of the present invention; Figure 3 This is a graph showing the time required for a wafer to cool to 50°C and 70°C under different cooling chamber pressures in an embodiment of the present invention.

[0020] Explanation of reference numerals in the attached figures: 1. Cooling chamber; 2. Support platform; 3. Wafer; 4. Temperature sensor; 5. Cooling gas source; 6. Pressure sensor; 7. Exhaust valve; 8. Vacuum pump. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0022] To address the problems existing in the prior art, embodiments of the present invention provide a cooling chamber with controllable cooling rate, a semiconductor device, and a temperature control method. The purpose is to avoid the risk of thermal stress cracking of wafers caused by excessively rapid cooling, thereby improving process reliability and reducing the breakage rate. On the other hand, through controllable and uniform cooling, the stress state and crystal quality of the wafer surface film can be better controlled, thereby improving product consistency and yield, while also avoiding the problem of low cooling rate caused by excessively slow cooling rate.

[0023] In one embodiment, such as Figure 1 As shown, the cooling chamber with controllable cooling rate includes a cooling chamber 1, a temperature sensor 4, a pressure regulator and a control unit; the cooling chamber 1 has a built-in support platform 2 for supporting the wafer 3 and is connected to an external cooling gas source 5 to input cooling gas for cooling the wafer 3 into the cooling chamber 1.

[0024] Preferably, the cooling gas can be an inert gas such as nitrogen or argon.

[0025] In one embodiment, the temperature sensor 4 is disposed in the cooling chamber 1 for real-time acquisition of the real-time temperature of the wafer 3; the pressure regulator is connected to the cooling chamber 1 for adjusting the pressure in the cooling chamber 1; the control unit is communicatively connected to the temperature sensor 4 and the pressure regulator, the control unit obtains the real-time cooling rate based on the real-time temperature, and drives the pressure regulator to adjust the air pressure in the cooling chamber 1 based on the comparison result of the real-time cooling rate and the preset cooling rate, so that the real-time cooling rate meets the requirements of the preset cooling rate.

[0026] This embodiment integrates the cooling chamber, temperature sensor, pressure regulator, and controller into a single system, forming a complete closed-loop automatic control loop. This enables dynamic, real-time regulation of the cooling process, achieving proactive, real-time, and precise control of the wafer 3 cooling process. Specifically, the temperature sensor 4 continuously collects the real-time temperature of the wafer 3, providing the controller with direct feedback information. Based on this, the controller calculates the real-time cooling rate and dynamically compares it with a preset cooling rate to determine whether the cooling process is too fast or too slow. Finally, the controller outputs a command based on the comparison result, driving the pressure regulator to adjust the air pressure in the cooling chamber 1, thereby controlling the cooling rate of the wafer 3 through pressure changes. Through closed-loop feedback and proactive control, the system can continuously and dynamically adjust the pressure in the cooling chamber 1 during the cooling process, ensuring that the actual cooling rate remains stable within the preset ideal range. This precise control effectively avoids the risk of wafer 3 cracking caused by thermal stress due to excessively rapid cooling, improving process reliability and reducing the breakage rate. On the other hand, by achieving controllable and uniform cooling, it can better control the stress state and crystal quality of the wafer 3 surface film, thereby significantly improving the consistency and yield of the final product, while avoiding the low production efficiency caused by excessively slow cooling rates.

[0027] In one embodiment, the temperature sensing element 4 can be an infrared probe or a contact thermocouple; when the temperature sensing element 4 is an infrared probe, the infrared probe is positioned directly above the wafer 3 to collect the real-time temperature of the wafer 3 in a non-contact manner; when the temperature sensing element 4 is a contact thermocouple, the contact thermocouple is positioned on the top of the support platform 2 to collect the real-time temperature of the wafer 3 in a contact manner.

[0028] In one embodiment, the controller can be an industrial controller based on a microprocessor or programmable logic controller (PLC), such as a PLC, a distributed control system, or a dedicated temperature controller. It is connected to field devices such as the temperature sensor 4 and the pressure regulator via a communication bus (e.g., analog data transfer, digital I / O, fieldbus, or industrial Ethernet). Its function is to receive and process real-time temperature information from the temperature sensor 4, calculate the cooling rate of the wafer 3 in real time, and then logically compare it with a preset cooling rate. Based on the comparison result, the controller calculates and outputs corresponding control commands, dynamically adjusting the action of the pressure regulator, thereby forming a closed-loop feedback control system that precisely regulates the air pressure within the cooling chamber 1 to stabilize the cooling rate of the wafer 3 within a preset target range in real time and dynamically.

[0029] In one embodiment, the preset cooling rate is a target range, including an upper limit and a lower limit. When the comparison result shows that the real-time cooling rate is lower than the lower limit, the controller drives the pressure regulator to increase the air pressure in the cooling chamber 1 to increase the real-time cooling rate of the wafer 3. When the comparison result shows that the real-time cooling rate is higher than the upper limit, the controller drives the pressure regulator to decrease the air pressure in the cooling chamber 1 to decrease the real-time cooling rate of the wafer 3. By comparing the real-time cooling rate with the upper and lower limits of the preset cooling rate to drive air pressure regulation, the stability, safety, and process consistency of the cooling process are ensured. Specifically, when the real-time cooling rate is lower than the set lower limit, the controller determines that the cooling speed is too slow. At this time, increasing the air pressure in the cooling chamber 1 by the pressure regulator can increase the molecular density of the cooling gas in the cooling chamber 1, thereby enhancing the heat transfer efficiency between the gas and the high-temperature wafer 3, and actively increasing the cooling rate to prevent excessively long process time or insufficient cooling. Conversely, when the real-time cooling rate exceeds the set upper limit, the system determines that there is a risk of excessive thermal stress due to rapid cooling. In this case, the system reduces the gas pressure to decrease the thermal conductivity of the gas molecules, thereby actively slowing down the cooling rate and effectively preventing wafer 3 from cracking due to sudden temperature changes. This bidirectional, dynamic adjustment mechanism based on a preset target range allows the control system to automatically stabilize the cooling rate within the preset ideal window. This not only improves the reliability and controllability of the process and reduces the wafer 3 breakage rate, but also provides a key guarantee for accurately controlling the stress and crystal quality of the wafer 3 surface film, ultimately achieving the production goals of high yield and high consistency.

[0030] In one embodiment, such as Figure 1As shown, the pressure regulating component includes an exhaust valve 7 and a vacuum pump 8 connected to an exhaust pipe, which is connected to the cooling chamber 1. The control component coordinates the pressure within the cooling chamber 1 by adjusting the opening of the exhaust valve 7 and the pumping speed of the vacuum pump 8. Integrating the exhaust valve 7 and the vacuum pump 8 into the pressure regulating component, and coordinating their control by the control component, constitutes a precise and dynamic pressure regulation system. By adjusting the opening of the exhaust valve 7 (controlling the gas discharge rate) and the pumping speed of the vacuum pump 8 (actively extracting gas to reduce pressure), the control component can achieve bidirectional, rapid, and precise adjustment of the pressure within the cooling chamber 1 in a coordinated and complementary manner. Specifically, when it is necessary to increase the chamber pressure to accelerate cooling, the opening of the exhaust valve 7 can be reduced or the pumping speed of the vacuum pump 8 can be decreased; conversely, when it is necessary to reduce the pressure to slow down cooling, the opening of the exhaust valve 7 can be increased or the pumping speed of the vacuum pump 8 can be increased. This multi-variable collaborative control method, compared to adjusting a single valve or pump, can more quickly and stably establish and maintain the required pressure setpoint, thereby achieving more sensitive and precise closed-loop control of the wafer 3 cooling rate. This ensures that the cooling process remains stable within the target range of the preset cooling rate, ultimately improving process consistency and wafer 3 yield.

[0031] In one embodiment, the pressure regulating component includes an intake valve disposed on the connecting pipeline between the cooling gas source 5 and the cooling chamber 1. The intake valve is communicatively connected to the control component, which controls the pressure within the cooling chamber 1 by adjusting the opening degree of the intake valve. This allows for precise control of the cooling gas input flow rate and timing. By adjusting the opening degree of the intake valve, the flow rate of the cooling gas entering the cooling chamber 1 can be precisely controlled, thereby enabling proactive adjustment of the gas pressure and composition within the cooling chamber 1, providing a basis for subsequent cooling rate regulation.

[0032] Specifically, the controller can precisely adjust the opening of the inlet valve according to the real-time cooling rate requirement, thereby actively controlling the flow rate of cooling gas (such as nitrogen, argon, or other inert gases) entering the cooling chamber 1. When it is necessary to increase the pressure of the cooling chamber 1 to accelerate cooling, the controller issues a command to increase the opening of the inlet valve, allowing more cooling gas to enter the cooling chamber 1, thereby increasing the gas pressure and density, enhancing its thermal conductivity to the wafer 3, and promoting cooling. When it is necessary to reduce the pressure to slow down cooling, the controller can issue a command to reduce or even temporarily close the opening of the inlet valve, limiting the inflow of fresh cooling gas. At this time, through the continuous operation of the exhaust valve 7 and / or vacuum pump 8, the pressure of the cooling chamber 1 is reduced, the thermal conductivity of the gas is weakened, thereby reducing the cooling rate of the wafer 3. Through this precise and active control of the inlet valve, combined with the coordinated adjustment of the exhaust end (exhaust valve 7 and vacuum pump 8), the system can achieve rapid and bidirectional adjustment of the pressure of the cooling chamber 1, providing a flexible, reliable, and efficient means for dynamically controlling the cooling rate of the wafer 3.

[0033] This invention provides a table (e.g., Table 1) showing the time required for a wafer to cool to 50°C and 70°C under different cooling chamber pressures, and a graph (e.g., Table 1) showing the time required for a wafer to cool to 50°C and 70°C under different cooling chamber pressures. Figure 3 (As shown).

[0034] Table 1. Correspondence between the time required for wafers to cool to 50°C and 70°C under different cooling chamber pressures.

[0035] As can be seen from the table, there is a clear correlation between the cooling time of wafer 3 and the pressure of cooling chamber 1. The general trend is that the higher the pressure in cooling chamber 1, the shorter the time required to cool to the target temperature. Specifically, for both the target temperatures of 70°C and 50°C for wafer 3, the required cooling time decreases significantly with increasing pressure (from 0 Torr to 8.5 Torr). For example, as the pressure increases from 0 Torr to 8.5 Torr, the time required to cool to 70°C decreases from 171.6 seconds to 97 seconds, and the time required to cool to 50°C decreases from 259.4 seconds to 160.6 seconds. This data clearly demonstrates that, in a vacuum or low-pressure environment, increasing the pressure of cooling chamber 1 (which usually means increasing the thermal conductivity of the cooling gas) can effectively shorten the cooling time. This provides direct data support and a theoretical basis for achieving preset and real-time control of the cooling rate by precisely adjusting the pressure of cooling chamber 1. According to the pressure-time relationship table of this cooling chamber 1, the control unit can regulate and stabilize the pressure of the cooling chamber 1 at a specific value during the cooling process by controlling the pressure regulator, thereby controlling the cooling rate of the wafer 3 (reflected in the time required to reach the target temperature) within a preset and ideal range.

[0036] In one embodiment, a pressure sensor 6 is installed inside the cooling chamber 1. The pressure sensor 6 is communicatively connected to the control unit and is used to monitor the pressure inside the cooling chamber 1 in real time and feed back the pressure information to the control unit. This configuration provides crucial real-time pressure feedback information for the entire closed-loop control system, thereby enabling direct and accurate measurement and closed-loop control of the air pressure inside the cooling chamber 1. The pressure sensor 6 can continuously and in real time monitor the absolute or relative pressure inside the cooling chamber 1 and feed back this pressure information (usually electrical information) to the control unit. After receiving the real-time pressure data, the control unit can compare it with the target pressure value calculated based on the cooling rate control logic, thereby accurately determining whether the actual pressure adjusted by the intake valve, exhaust valve 7, and vacuum pump 8 has reached the expected set point. This control method based on direct pressure feedback, compared to open-loop estimation using only valve opening and pump speed, can compensate for system disturbances (such as gas temperature fluctuations, pipeline leaks, etc.) more quickly and accurately, ensuring that the pressure in cooling chamber 1 can quickly and stably reach and maintain the target value. This provides a reliable data foundation and closed-loop control guarantee for accurately controlling the cooling rate of wafer 3 through gas pressure regulation, further improving the control accuracy, stability, and repeatability of the entire cooling process.

[0037] In one embodiment, the number of temperature sensors 4 is set to a plurality of them, which are distributed on the inner sidewall of the cooling chamber 1 and / or the upper surface of the support platform 2 to collect the real-time temperature of the wafer 3 at multiple points. The control unit obtains a plurality of real-time cooling rates based on the plurality of real-time temperatures, compares the plurality of real-time cooling rates with a preset cooling rate, and selects the highest or lowest real-time cooling rate to compare with the preset cooling rate to obtain the comparison result.

[0038] By deploying multiple temperature sensors 4 on the inner wall of the cooling chamber 1 and / or the upper surface of the support platform 2 to collect temperature data at multiple points, the temperature distribution differences at different locations on the wafer 3 during the cooling process can be monitored comprehensively and in real time. Based on this real-time temperature data from multiple points, the control unit can calculate the real-time cooling rate of different regions on the wafer 3 and compare it with a preset cooling rate target range. The highest or lowest real-time cooling rate is selected and compared with the preset cooling rate to obtain the comparison result. The control system can focus on the fastest or slowest cooling region on the wafer 3. Using the highest rate as the basis effectively prevents any local area on the wafer 3 from cooling too quickly, thus preventing excessive thermal stress and cracking risk, ensuring the safety of the cooling process. Using the lowest rate as the basis ensures that even the slowest cooling region on the wafer 3 can reach the preset cooling target, guaranteeing cooling uniformity and process consistency. This control strategy, based on multi-point monitoring and the most unfavorable region (fastest or slowest), makes the cooling rate control more precise, global, and robust. It can effectively solve the problem of uneven cooling caused by the non-uniformity of the wafer 3 itself or process conditions (such as gas flow field and thermal boundary conditions), thereby preventing cracking and further improving the uniformity of the overall cooling of the wafer 3 and the consistency of the final product performance.

[0039] Meanwhile, the presence of multiple temperature sensors 4 facilitates independent monitoring of the central and edge regions of wafer 3. By strategically arranging these sensors in space—for example, placing one or more temperature sensors 4 on the upper surface of the support platform 2 corresponding to the central region of wafer 3, and another or more temperature sensors 4 on the upper surface of the support platform 2 corresponding to the edge region of wafer 3—the system can independently acquire temperature information for different regions of wafer 3. This multi-point distributed layout forms a multi-channel temperature monitoring network, enabling the controller to calculate not only the overall average cooling rate of wafer 3 but also the real-time cooling rates of the central and edge regions independently. This provides a precise data foundation for differentiated cooling control of different regions and areas of wafer 3, helping to solve the temperature difference problem between the central and edge regions of wafer 3 caused by uneven thermal radiation and convection. This allows for refined control of the cooling uniformity of wafer 3, further optimizing film stress state and crystal quality.

[0040] In one embodiment, the inner sidewall and / or top wall of the cooling chamber 1 are provided with a temperature regulating plate. The temperature regulating plate has a medium flow channel for introducing a constant-temperature heat-conducting medium, so as to maintain or regulate the inner wall temperature of the cooling chamber 1 by maintaining or regulating the temperature of the temperature regulating plate. By introducing a constant-temperature heat-conducting medium (such as circulating water or heat-conducting oil) into the medium flow channel, the temperature of the inner wall of the cooling chamber 1 can be actively maintained near a set value by controlling the temperature of the temperature regulating plate. This configuration can significantly reduce the temperature changes of the inner wall of the cooling chamber 1 caused by environmental or process heat load fluctuations, thereby providing a more stable and uniform peripheral thermal environment for the wafer 3. A stable inner wall temperature helps reduce its impact on non-uniform radiative heat transfer of the wafer 3, and can effectively suppress local overcooling or uneven cooling problems of the wafer 3 caused by uneven or fluctuating cavity wall temperature. The temperature control plate, combined with active air pressure control, constitutes a dual control mechanism of "boundary temperature field regulation" and "air pressure thermal conduction regulation". This enables the system to manage heat exchange during the wafer 3 cooling process more comprehensively and accurately, further improving the control capability of the overall and local cooling rate and uniformity of wafer 3. This has a positive effect on improving the cooling quality and product yield of wafer 3, especially large-size wafers or wafers sensitive to thermal stress.

[0041] In one embodiment, the temperature regulating plate can be a jacketed, coiled, or internally etched metal plate (e.g., made of thermally conductive materials such as stainless steel or aluminum alloy) integrated into the inner sidewall and / or inner top wall of the cooling chamber 1. Its structure includes internally machined media channels for introducing a constant-temperature heat-conducting medium. These channels can be designed as single-pass or multi-pass loops to ensure uniform flow of the medium across the entire plate surface, thereby achieving uniform temperature control of the plate. The inlet and outlet of the media channels are connected to an external constant-temperature circulation system (such as a constant-temperature circulating water system) via pipes. Through this structural design, the temperature regulating plate can act as a stable and controllable constant-temperature boundary, actively absorbing or releasing heat to maintain the uniformity and constancy of the inner wall temperature of the cooling chamber 1, reducing its interference with the cooling process of the wafer 3.

[0042] In one embodiment, the support platform 2 integrates cooling channels internally, which are connected to an external coolant circulation system to work in conjunction with the cooling gas to cool the wafer 3. Integrating cooling channels within the support platform 2 and connecting them to the external coolant circulation system provides a direct and efficient heat conduction path for the wafer 3 cooling system. By controlling the flow of circulating low-temperature coolant (such as deionized water, ethylene glycol solution, etc.) through the cooling channels within the support platform 2, heat can be efficiently and stably absorbed and carried away from the back side of the wafer 3 (the surface in contact with the support platform 2), thereby achieving rapid cooling. This internal cooling channel, combined with the aforementioned cooling gas, constitutes a three-dimensional cooling mechanism that combines conductive and convective cooling. This synergy not only significantly improves overall cooling efficiency and shortens the process cycle, but also allows for more precise control of the temperature of the support stage 2 (and thus the back side of the wafer 3) by adjusting the temperature and flow rate of the coolant. This helps to improve the temperature gradient of the wafer 3 in the thickness direction and reduce the risk of thermal stress and warping caused by excessive temperature difference between the upper and lower surfaces. Thus, while pursuing rapid cooling, it further improves the uniformity, controllability, and reliability of the wafer 3 cooling process.

[0043] In one embodiment, the cooling channel includes a first sub-cooling channel and a second sub-cooling channel, and the coolant circulation system includes a first coolant source and a second coolant source. The first sub-cooling channel is located in the inner ring region of the support platform 2 corresponding to the central region of the wafer 3 and is connected to the first coolant source. The second sub-cooling channel is located in the outer ring region of the support platform 2 corresponding to the edge region of the wafer 3 and is connected to the second coolant source. Both the first coolant source and the second coolant source are communicatively connected to the control unit. The control unit adjusts the temperature of the coolant in the first coolant source and the temperature of the coolant in the second coolant source based on the comparison result, so as to achieve independent cooling and temperature control for the central region and the edge region of the wafer 3, respectively.

[0044] By dividing the internal cooling channels of the support stage 2 into an inner ring region corresponding to the central and edge regions of the wafer 3, and an outer ring region surrounding the inner ring region, and by setting a first sub-cooling channel and a second sub-cooling channel in the inner and outer ring regions respectively, and connecting the first and second sub-cooling channels to their respective independently controllable first and second coolant sources, independent and zoned temperature control of the central and edge regions of the wafer 3 is achieved, enabling targeted optimization of the overall cooling uniformity of the wafer 3. During the cooling process, the edge regions of the wafer 3 typically cool faster than the central regions due to their larger heat dissipation area and more sufficient contact with the cooling gas, easily generating larger radial temperature differences and thermal stress. This design allows for independent adjustment of the temperature of the coolant flowing into the first sub-cooling channel (corresponding to the central region) and the second sub-cooling channel (corresponding to the edge regions). For example, when the central region is detected to be cooling too slowly, the temperature of the first coolant source can be lowered to enhance central cooling; when the edge region is cooling too quickly, the temperature of the second coolant source can be increased to slow down edge cooling. This "zoning and independent temperature control" capability enables the system to actively compensate for and balance the inherent uneven heat loss of wafer 3 during the cooling process, significantly improving the radial temperature uniformity of wafer 3, effectively reducing thermal stress and wafer 3 deformation (such as warping) caused by uneven cooling, thereby further improving the yield, consistency and reliability of wafer 3 products while ensuring rapid cooling.

[0045] In one embodiment, the inner ring region and the outer ring region are specifically related such that the outer ring region surrounds the outer side of the inner ring region.

[0046] In one embodiment, the preset cooling rate includes a first cooling rate and a second cooling rate. The real-time cooling rate includes a first real-time cooling rate corresponding to the center region of the wafer and a second real-time cooling rate corresponding to the edge region of the wafer. It should be noted that the first real-time cooling rate is the real-time temperature of the center region of the wafer 3 collected by the temperature sensor 4 corresponding to the center region of the wafer, and the control unit obtains the first real-time cooling rate based on the measured real-time temperature of the center region. The second real-time cooling rate is the real-time temperature of the edge region of the wafer 3 collected by the temperature sensor 4 corresponding to the edge region of the wafer, and the control unit obtains the second real-time cooling rate based on the measured real-time temperature of the edge region. The control unit drives the pressure regulating component to adjust the air pressure in the cooling chamber 1 based on a first comparison result obtained by comparing the first cooling rate with the first real-time cooling rate, and a second comparison result obtained by comparing the second cooling rate with the second real-time cooling rate. It also adjusts the temperature of the coolant in the first coolant source based on the first comparison result, and adjusts the temperature of the coolant in the second coolant source based on the second comparison result. This combines the overall cooling rate control of wafer 3 with the refined temperature management of different zones (such as the central and edge regions), forming a multi-variable, hierarchical collaborative control strategy.

[0047] Specifically, by setting two preset cooling rates for different regions (e.g., the first cooling rate corresponds to the target rate in the center region of wafer 3, and the second cooling rate corresponds to the target rate in the edge region), the controller can acquire the real-time cooling rate of each region and compare it with the corresponding target value, generating two independent first comparison results and second comparison results. Based on this, the system can simultaneously execute two types of regulation: on the one hand, based on the overall or dominant cooling demand, it drives the pressure regulator (such as adjusting the chamber air pressure) to globally accelerate or slow down the average cooling rate of wafer 3; on the other hand, it can independently adjust the temperature of the first and second coolant sources leading to the corresponding regions according to the comparison results of the center and the edge, so as to achieve differentiated temperature compensation for the two regions. This synchronous coupling of "global air pressure regulation" and "regional liquid temperature regulation" enables the system to more flexibly and precisely cope with the complex thermal state of wafer 3 caused by uneven heat distribution during the cooling process. It not only ensures that the overall cooling rate of wafer 3 is maintained within a preset safe range, but also actively optimizes and balances the temperature difference between the central and edge regions of wafer 3. This not only prevents overall overcooling or overheating, but also significantly improves the cooling uniformity of wafer 3, effectively reduces thermal stress and warpage risk, and ultimately achieves higher product yield and consistency.

[0048] In one embodiment, the cooling chamber with controllable cooling rate further includes a first split air channel and a second split air channel. The first split air channel is connected to the cooling gas source 5 and its outlet faces the central region of the wafer 3. The second split air channel is connected to the cooling gas source 5 and its outlet faces the edge region of the wafer 3, so as to adjust the air pressure in the central region and the edge region of the wafer 3 by controlling the gas flow rate in the first split air channel and the second split air channel, respectively.

[0049] By dividing the total airflow path of the cooling gas into a first and a second branch airflow channel corresponding to the central and edge regions of wafer 3, respectively, active and independent control of the cooling airflow distribution in different regions of wafer 3 is achieved. By independently controlling the flow rates of these two airflow channels, the flow rate and pressure of the cooling gas reaching the central and edge regions of wafer 3 can be adjusted separately, thereby enabling fine-tuning of the heat exchange conditions in these two localized areas. For example, when enhanced cooling of the central region is needed, the gas flow rate of the first branch airflow channel can be increased to improve the gas pressure and gas exchange efficiency in the central region; when a slower cooling rate is needed in the edge region to prevent excessively rapid cooling, the gas flow rate of the second branch airflow channel can be reduced. This zoned airflow control mechanism, combined with the aforementioned "zoned coolant temperature control" and "overall chamber pressure control," provides a direct means to achieve radial temperature uniformity of wafer 3 in the gas convection cooling dimension. It can specifically compensate for the cooling difference between the central and edge regions of wafer 3 caused by uneven geometry and flow field distribution, optimize the temperature uniformity of the entire wafer 3 surface, thereby more effectively controlling thermal stress and improving the cooling quality and product yield of wafer 3.

[0050] In one embodiment, the first and second branch gas channels can be independent gas pipelines or nozzle arrays branching off from the main cooling gas source 5 and leading to specific areas within the cooling chamber 1, respectively. The outlet of the first branch gas channel can be designed to point towards or cover the central region of the wafer 3. Its structure can be a single jet nozzle located above the center of the support stage 2, a group of annular array jet nozzles, or a flow equalization plate with uniformly distributed small holes, designed to concentrate or uniformly deliver cooling gas to the central region of the wafer 3. The outlet of the second branch gas channel points towards the edge region of the wafer 3. Its structure can be an annular manifold arranged around the edge of the wafer 3, a series of nozzles uniformly arranged circumferentially, or an outlet located on the sidewall of the chamber with the airflow direction towards the edge of the wafer 3, designed to specifically deliver cooling gas to the outer ring of the wafer 3. Independent flow control valves (such as proportional valves or on / off valves) can be installed on both air channels and communicated with the control unit. This allows the system to adjust the cooling gas flow rate and even the temperature of the two air channels separately based on real-time temperature feedback, so as to achieve differentiated airflow cooling for the central and edge areas of wafer 3 and optimize the overall temperature uniformity of wafer 3.

[0051] Of course, in other embodiments, the first and second shunt gas channels are not limited to the above-described structures. Any structure can be used as long as it does not affect the wafer 3 process and achieves the above-described effect. This will not be elaborated further here.

[0052] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor device, including a process chamber, a robotic arm, and a cooling chamber with a controllable cooling rate. The robotic arm is used to transfer wafer 3 between the process chamber and the cooling chamber with a controllable cooling rate. Integrating the cooling chamber with a controllable cooling rate, the process chamber, and the robotic arm into a complete semiconductor device achieves a seamless and automated connection between the high-temperature process and the controllable cooling process of wafer 3. The robotic arm transferring wafer 3 between the two not only improves production efficiency and automation levels, but more importantly, ensures that wafer 3 can be quickly and smoothly transferred to the cooling chamber for controlled cooling after the process is completed. This integrated system design allows the cooling process of wafer 3 to begin immediately in a controlled environment after leaving the high-temperature process chamber, avoiding temperature fluctuations and thermal stress risks caused by transfer delays or exposure to uncontrollable environments. By using the cooling chamber 1, which has precise cooling rate control capability, as a standard module in the semiconductor manufacturing process, this system can provide consistent and reliable cooling treatment for wafers 3 after different processes. This not only improves the overall equipment production efficiency, but also fundamentally ensures the process quality, consistency and final product yield of wafers 3 during the cooling stage.

[0053] In one embodiment, the semiconductor equipment can be various semiconductor manufacturing equipment that requires controlled cooling of the wafer after performing high-temperature processes, such as chemical vapor deposition (CVD) equipment, physical vapor deposition (PVD) equipment, atomic layer deposition (ALD) equipment, and other deposition equipment; etching equipment such as dry etching (e.g., reactive ion etching, RIE) or wet etching equipment; and resist removal equipment such as plasma resist removal or wet resist removal equipment.

[0054] To address the problems existing in the prior art, embodiments of the present invention also provide a temperature control method for a cooling chamber with a controllable cooling rate, applied to the aforementioned cooling chamber with a controllable cooling rate, such as... Figure 2 As shown, the temperature control method includes the following steps: S1: Setting the preset cooling rate; This step is the starting point and core control target setting stage of the entire temperature control process. In this step, the operator or control system needs to preset a target cooling rate range based on the specific process requirements, material properties (such as silicon, silicon carbide, etc.), and structural parameters (such as thickness and diameter) of the wafer 3 to be cooled, and in conjunction with the requirements of subsequent process steps on the thermal state of wafer 3. This preset cooling rate is usually a range value, including an upper limit (e.g., not exceeding a certain value to prevent excessively rapid cooling and thermal stress) and a lower limit (e.g., not lower than a certain value to ensure production efficiency). This target value (or range) can be determined based on empirical data, theoretical models, or experimental data (such as the pressure and time relationship table provided in Table 1) and input into the controller as a benchmark for comparison with the real-time cooling rate in subsequent closed-loop control.

[0055] S2: During the cooling process of wafer 3, the real-time temperature information of wafer 3 in cooling chamber 1 is collected by temperature sensor 4. After wafer 3 is placed on the support platform 2 of cooling chamber 1, temperature sensor 4 (such as thermocouple, infrared thermometer or resistance temperature detector, etc.) begins to measure the actual temperature of wafer 3 in real time and continuously. This step is the data acquisition stage of the closed-loop feedback control system.

[0056] S3: The controller calculates the real-time cooling rate based on the real-time temperature information. After receiving the real-time temperature information from the temperature sensor 4, the controller first processes the information (e.g., filtering, analog-to-digital conversion). Then, based on the continuous temperature data collected within a preset time interval (e.g., Δt, which can be set to seconds or several seconds), it calculates the real-time cooling rate using algorithms such as numerical differentiation (e.g., central difference method or direct calculation of temperature change per unit time). The controller continuously and periodically performs this calculation, thereby obtaining a real-time cooling rate curve or data sequence that varies over time. This calculated real-time cooling rate is the core feedback variable of the control system. It provides a direct and quantitative basis for comparison with the preset cooling rate target in the next step and is a crucial link in the entire closed-loop control logic.

[0057] S4: Based on the comparison between the real-time cooling rate and the preset cooling rate, the control unit drives the pressure regulating unit to adjust the air pressure in the cooling chamber 1 so that the real-time cooling rate meets the requirements of the preset cooling rate. After completing the calculation of the real-time cooling rate, the control unit immediately compares it with the preset target cooling rate range (including the upper limit and lower limit of the rate). This comparison process involves a logical judgment: if the real-time cooling rate is lower than the preset lower limit, the controller determines that the current cooling is too slow. It then outputs a command to drive the pressure regulator (e.g., increase the opening of the inlet valve, close the exhaust valve, or reduce the pumping speed of the vacuum pump 8) to increase the gas pressure in the cooling chamber 1, thereby increasing the cooling gas density and heat transfer efficiency, and accelerating the cooling rate. Conversely, if the real-time cooling rate is higher than the preset upper limit, the controller determines that the cooling is too fast. It then outputs the opposite command to drive the pressure regulator (e.g., decrease the opening of the inlet valve, open the exhaust valve, or increase the pumping speed of the vacuum pump 8) to decrease the gas pressure in the cooling chamber 1, thereby reducing cooling efficiency and slowing down the cooling rate. Through this dynamic closed-loop control based on the comparison results, the system can continuously adjust the chamber pressure, ultimately stabilizing the real-time cooling rate within the preset target range, achieving precise and proactive control of the cooling process.

[0058] In one embodiment, step S4, where the control unit drives the pressure regulating component to adjust the air pressure in the cooling chamber based on a comparison between the real-time cooling rate and the preset cooling rate, includes: when the comparison result indicates that the real-time cooling rate is lower than the lower limit of the preset cooling rate, the control unit drives the pressure regulating component to increase the air pressure in the cooling chamber 1 to accelerate the cooling efficiency; when the comparison result indicates that the real-time cooling rate is higher than the upper limit of the preset cooling rate, the control unit drives the pressure regulating component to decrease the air pressure in the cooling chamber 1 to reduce the cooling efficiency.

[0059] In one embodiment, the preset cooling rate is set based on the material, thickness, or surface film characteristics of the wafer 3. Of course, in other embodiments, the setting is not limited to the aforementioned characteristics, which will not be elaborated here.

[0060] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A cooling chamber with controllable cooling rate, characterized in that, This includes cooling chambers, temperature sensors, pressure regulators, and control components; The cooling chamber is equipped with a support platform for supporting the wafer and is connected to an external cooling gas source to input cooling gas for cooling the wafer into the cooling chamber. The temperature sensor is located in the cooling chamber and is used to collect the real-time temperature of the wafer. The pressure regulating component is connected to the cooling chamber to regulate the pressure inside the cooling chamber; The control unit is communicatively connected to the temperature sensor and the pressure regulator. The control unit obtains the real-time cooling rate of the wafer based on the real-time temperature. The real-time cooling rate includes a first real-time cooling rate corresponding to the center region of the wafer and a second real-time cooling rate corresponding to the edge region of the wafer. Based on the comparison results of the first real-time cooling rate and the second real-time cooling rate with a preset cooling rate that includes the first cooling rate and the second cooling rate, the control unit drives the pressure regulator to adjust the air pressure in the cooling chamber so that the real-time cooling rate meets the requirements of the preset cooling rate.

2. The cooling chamber with controllable cooling rate according to claim 1, characterized in that, The preset cooling rate is a target range, and the target range includes an upper limit value and a lower limit value. When the comparison result indicates that the real-time cooling rate is lower than the lower limit of the rate, the control unit drives the pressure regulating unit to increase the air pressure in the cooling chamber to increase the real-time cooling rate of the wafer. When the comparison result indicates that the real-time cooling rate is higher than the upper limit of the rate, the control unit drives the pressure regulating unit to decrease the air pressure in the cooling chamber to decrease the real-time cooling rate of the wafer.

3. The cooling chamber with controllable cooling rate according to claim 1, characterized in that, The pressure regulating component includes an exhaust valve and a vacuum pump connected to an exhaust pipe, the exhaust pipe being connected to the cooling chamber, and the control component coordinating the control of the pressure within the cooling chamber by adjusting the opening degree of the exhaust valve and the pumping speed of the vacuum pump respectively. And / or the pressure regulating component further includes an intake valve, which is disposed on the connecting pipe between the cooling gas source and the cooling chamber. The intake valve is communicatively connected to the control component, which controls the pressure in the cooling chamber by adjusting the opening of the intake valve.

4. The cooling chamber with controllable cooling rate according to claim 3, characterized in that, A pressure sensor is installed in the cooling chamber. The pressure sensor is communicatively connected to the control unit and is used to monitor the pressure in the cooling chamber in real time and feed back the pressure information to the control unit.

5. The cooling chamber with controllable cooling rate according to claim 1, characterized in that, The number of temperature sensors is set to several, and the temperature sensors are distributed on the inner wall of the cooling chamber and / or the upper surface of the support platform to collect the real-time temperature of the wafer at multiple points. The control unit obtains several real-time cooling rates based on the several real-time temperatures, and selects the highest or lowest real-time cooling rate to compare with the preset cooling rate to obtain the comparison result.

6. The cooling chamber with controllable cooling rate according to claim 1, characterized in that, The inner sidewall and / or inner top wall of the cooling chamber are provided with a temperature regulating plate. The temperature regulating plate is provided with a medium flow channel for introducing a constant temperature heat-conducting medium, so as to maintain or regulate the inner wall temperature of the cooling chamber by maintaining or regulating the temperature of the temperature regulating plate.

7. The cooling chamber with controllable cooling rate according to claim 5, characterized in that, The support platform has an integrated cooling channel inside, which is connected to an external coolant circulation system to work in conjunction with the cooling gas to cool the wafer.

8. The cooling chamber with controllable cooling rate according to claim 7, characterized in that, The cooling channel includes a first sub-cooling channel and a second sub-cooling channel, and the coolant circulation system includes a first coolant source and a second coolant source. The first sub-cooling channel is located in the inner ring area of ​​the support platform corresponding to the center area of ​​the wafer and is connected to the first coolant source. The second sub-cooling channel is located in the outer ring area of ​​the support platform corresponding to the edge area of ​​the wafer and is connected to the second coolant source. Both the first coolant source and the second coolant source are communicatively connected to the control unit. The control unit adjusts the temperature of the coolant in the first coolant source and the temperature of the coolant in the second coolant source based on the comparison result, so as to achieve independent cooling and temperature control for the central region and the edge region of the wafer, respectively.

9. The cooling chamber with controllable cooling rate according to claim 8, characterized in that, The control unit adjusts the temperature of the coolant in the first coolant source based on a first comparison result obtained by comparing the first cooling rate with the first real-time cooling rate, and adjusts the temperature of the coolant in the second coolant source based on a second comparison result obtained by comparing the second cooling rate with the second real-time cooling rate.

10. The cooling chamber with controllable cooling rate according to claim 8, characterized in that, It also includes a first split gas channel and a second split gas channel. The first split gas channel is connected to the cooling gas source and its outlet faces the central region of the wafer. The second split gas channel is connected to the cooling gas source and its outlet faces the edge region of the wafer, so as to adjust the gas pressure in the central region and the edge region of the wafer by controlling the gas flow rate in the first split gas channel and the second split gas channel, respectively.

11. A semiconductor device, characterized in that, The device includes a process chamber, a robotic arm, and a cooling chamber with a controllable cooling rate as described in any one of claims 1 to 10, wherein the robotic arm is used to transfer wafers between the process chamber and the cooling chamber with a controllable cooling rate.

12. A method for controlling the temperature of a cooling chamber with a controllable cooling rate, characterized in that, Applied to a cooling chamber with a controllable cooling rate as described in any one of claims 1 to 10, the temperature control method includes the following steps: S1: Set the preset cooling rate; S2: During the wafer cooling process, real-time temperature information of the wafer inside the cooling chamber is collected through temperature sensors; S3: The control unit calculates the real-time cooling rate based on the real-time temperature information; S4: Based on the comparison result between the real-time cooling rate and the preset cooling rate, the control component drives the pressure regulating component to adjust the air pressure in the cooling chamber so that the real-time cooling rate meets the requirements of the preset cooling rate.

13. The temperature control method for a cooling chamber with controllable cooling rate according to claim 12, characterized in that, In step S4, the step of the control component driving the pressure regulating component to adjust the air pressure in the cooling chamber based on the comparison result of the real-time cooling rate and the preset cooling rate includes: When the comparison result shows that the real-time cooling rate is lower than the preset cooling rate lower limit, the control unit drives the pressure regulating unit to increase the air pressure in the cooling chamber to accelerate the cooling efficiency. When the comparison result shows that the real-time cooling rate is higher than the upper limit of the preset cooling rate, the controller drives the pressure regulator to reduce the air pressure in the cooling chamber to reduce the cooling efficiency.

14. The temperature control method for a cooling chamber with controllable cooling rate according to claim 12, characterized in that, The preset cooling rate is set according to the material, thickness, or surface film characteristics of the wafer.

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