Semiconductor processing apparatus and control method
By setting an auxiliary exhaust port in the reaction chamber and connecting it to the negative pressure end, the problem of vacuum valve response speed limitation was solved, enabling rapid switching from high pressure to low pressure in the atomic layer etching process and improving production efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI ATOMIC QIZHI SEMICONDUCTOR EQUIPMENT CO LTD
- Filing Date
- 2026-05-07
- Publication Date
- 2026-06-05
AI Technical Summary
In the atomic layer etching process, existing semiconductor processing equipment suffers from long high-to-low voltage switching time due to the limited response speed of vacuum valves, which affects production efficiency.
An auxiliary exhaust valve is installed in the reaction chamber, which is connected to the negative pressure end. The negative pressure end is used to continuously evacuate the vacuum. When the pressure changes from high to low, the auxiliary exhaust valve is opened to achieve rapid pressure switching.
This shortens the time it takes for the reaction chamber to switch from high pressure to low pressure, thus improving production efficiency.
Smart Images
Figure CN122161389A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and more specifically, to a semiconductor processing apparatus and control method. Background Technology
[0002] Atomic Layer Etching (ALE) typically includes a modification phase and a stripping phase. In the modification phase, reactants are introduced to form an easily peelable modified layer; this phase of the reaction is self-limiting. In the stripping phase, a stripping agent is introduced to remove the modified layer from the surface. The modification and stripping phases are repeated cyclically, and the etching depth is precisely controlled by adjusting the number of cycles.
[0003] In the ALE process, a key factor affecting the modification and stripping stages is the chamber pressure. The optimal chamber pressure varies at different process stages, requiring the reaction chamber to switch between high and low pressure during the process. One technique achieves this switching by altering the opening of a vacuum valve. Specifically, when it's necessary to lower the reaction chamber pressure from high to low, the opening of the vacuum valve connected to the vacuum pump is increased; conversely, when it's necessary to raise the reaction chamber pressure from low to high, the opening of the vacuum valve connected to the vacuum pump is decreased.
[0004] However, due to the limitation of the vacuum valve's response speed, each switch from high pressure to low pressure takes a long time to complete, which increases the time required for each cycle of the ALE process, thereby increasing the total time required for the ALE process and severely reducing production efficiency. Summary of the Invention
[0005] To address at least one of the aforementioned problems, one aspect of this application provides a semiconductor processing apparatus, including a reaction chamber with an exhaust port connected to a vacuum pumping assembly for evacuating the reaction chamber; the reaction chamber has a first inlet end and a second inlet end, which alternately supply gas to the reaction chamber to alternately switch the pressure within the reaction chamber between high pressure and low pressure; the reaction chamber has an auxiliary exhaust port connected to a negative pressure end, and an auxiliary exhaust valve is provided between the auxiliary exhaust port and the negative pressure end, the negative pressure end being continuously evacuated; the auxiliary exhaust valve is configured to open during the process of the reaction chamber switching from high pressure to low pressure, so as to accelerate the switching of the reaction chamber from high pressure to low pressure.
[0006] For example, the vacuum assembly includes a vacuum valve and a first vacuum pump, the exhaust port is connected to the first vacuum pump through the vacuum valve, a transition cavity is provided between the vacuum valve and the first vacuum pump, and the negative pressure end includes the transition cavity.
[0007] For example, the vacuum assembly includes a vacuum valve, a first vacuum pump, and a dry pump. The exhaust port is connected in sequence through the vacuum valve, the first vacuum pump, and the dry pump. The negative pressure end includes a pipeline connected in parallel with the first vacuum pump and connected to the dry pump.
[0008] For example, the vacuum assembly includes a vacuum valve and a first vacuum pump, and the exhaust port is connected to the first vacuum pump through the vacuum valve; the semiconductor processing device further includes a second vacuum pump, which is connected to the negative pressure end to continuously evacuate the negative pressure end.
[0009] For example, the negative pressure end includes a negative pressure cavity.
[0010] For example, the volume of the negative pressure chamber is not less than 50% of the volume of the reaction chamber.
[0011] For example, the reaction chamber is provided with multiple auxiliary exhaust ports, and each of the auxiliary exhaust ports is connected to the negative pressure end by a bypass channel, and each of the bypass channels is provided with an auxiliary exhaust valve.
[0012] For example, multiple auxiliary exhaust ports are arranged at circumferential intervals along the reaction chamber.
[0013] For example, the negative pressure end includes an annular cavity that is circumferentially connected.
[0014] For example, the first air inlet is used to supply a first gas to the reaction chamber, the first gas causing the reaction chamber to operate at a first target pressure; the second air inlet is used to supply a second gas to the reaction chamber, the second gas causing the reaction chamber to operate at a second target pressure, the second target pressure being lower than the first target pressure; the auxiliary exhaust port and the second air inlet are located on different walls of the reaction chamber.
[0015] For example, the auxiliary exhaust port is located on the side wall of the reaction chamber, and the second air inlet is located on the top wall of the reaction chamber.
[0016] For example, the auxiliary exhaust port is located on the top wall of the reaction chamber, and the second air inlet is located on the side wall of the reaction chamber.
[0017] In this semiconductor processing equipment, a vacuum pumping assembly evacuates the reaction chamber through an exhaust port. The reaction chamber has a first inlet and a second inlet, which can alternately supply gas to the reaction chamber, so that the pressure inside the reaction chamber alternates between high pressure and low pressure.
[0018] By opening an auxiliary exhaust port connected to the negative pressure end in the reaction chamber, and installing an auxiliary exhaust valve between the auxiliary exhaust port and the negative pressure end, the auxiliary exhaust valve is closed when the reaction chamber switches from low pressure to high pressure and stabilizes at the target pressure for the corresponding process. This cuts off the connection between the reaction chamber and the negative pressure end. At this time, because the negative pressure end is continuously evacuated and loses its gas supply, it is quickly evacuated to a lower pressure. When the reaction chamber switches from high pressure to low pressure, the auxiliary exhaust valve is opened, connecting the reaction chamber to the negative pressure end. At this time, the reaction chamber is not only depressurized by the vacuum assembly connected to the exhaust port, but also the gas in the reaction chamber is accelerated to be extracted by connecting to the lower-pressure negative pressure end connected to the auxiliary exhaust port, thus achieving a rapid switch from high pressure to low pressure.
[0019] This setup effectively shortens the time required for each switch from high pressure to low pressure in the reaction chamber, which helps to increase production capacity.
[0020] Another aspect of this application provides a control method applied to the above-mentioned semiconductor processing equipment, the control method comprising: In the first stage, the first gas is supplied to the reaction chamber through the first gas inlet, and the first gas causes the reaction chamber to operate at a first target pressure in order to carry out a first process reaction based on the first gas. In the second stage, a second gas is supplied to the reaction chamber through the second inlet, and the second gas causes the reaction chamber to operate at a second target pressure to carry out a second process reaction based on the second gas; the second target pressure is less than the first target pressure. During the process of switching the reaction chamber from the first target pressure to the second target pressure, the auxiliary exhaust valve is opened to accelerate the switching of the reaction chamber from the first target pressure to the second target pressure.
[0021] For example, in the first stage, the auxiliary exhaust valve is closed, and the pressure at the negative pressure end is less than the second target pressure.
[0022] For example, the auxiliary exhaust valve is opened only during the first half of the process of switching the reaction chamber from the first target pressure to the second target pressure.
[0023] For example, the auxiliary exhaust valve is opened only during the latter half of the process of switching the reaction chamber from the first target pressure to the second target pressure.
[0024] In this control method, in the first stage, the reaction chamber operates at a first target pressure, and in the second stage, the reaction chamber operates at a second target pressure that is lower than the first target pressure.
[0025] Specifically, during the process of switching the reaction chamber from the first target pressure to the second target pressure, i.e., during the depressurization of the reaction chamber, the auxiliary exhaust valve is opened, which allows the reaction chamber to connect with the negative pressure end through the auxiliary exhaust port. At this time, the reaction chamber is not only depressurized through the vacuum assembly connected to the exhaust port, but also connected to the lower pressure negative pressure end connected to the auxiliary exhaust port due to the continuous vacuuming of the negative pressure end. The connection between the reaction chamber and the negative pressure end establishes a pressure balance, accelerates the extraction of gas from the reaction chamber, and thus accelerates the switching of the reaction chamber from the first target pressure to the second target pressure. This shortens the time required for each switch from high pressure to low pressure in the reaction chamber, thereby increasing production capacity. Attached Figure Description
[0026] To more clearly illustrate the technical solutions in the embodiments or background art of this application, the drawings used in the description of the embodiments or background art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0027] Figure 1 A schematic diagram of the structure of a first type of semiconductor processing device provided in the embodiments of this application; Figure 2 This is a schematic diagram of the structure of a second type of semiconductor processing device provided in the embodiments of this application; Figure 3 A schematic diagram of the structure of a third type of semiconductor processing device provided in the embodiments of this application; Figure 4 A schematic diagram of the structure of a fourth type of semiconductor processing device provided in the embodiments of this application; Figure 5 A schematic diagram of the structure of the fifth type of semiconductor processing device provided in the embodiments of this application; Figure 6 A schematic diagram of the structure of a sixth type of semiconductor processing device provided in the embodiments of this application; Figure 7 A schematic diagram of the structure of the seventh type of semiconductor processing device provided in the embodiments of this application; Figure 8 for Figure 7 AA section view in the middle; Figure 9 A schematic diagram of the structure of a semiconductor processing device provided in an embodiment of this application under a specific implementation; Figure 10 A schematic diagram of the structure of the semiconductor processing device provided in an embodiment of this application under another specific implementation; Figure 11A graph showing the relationship between the reaction chamber pressure and the opening / closing of the auxiliary exhaust valve, corresponding to the control method provided in the embodiments of this application; Figure 12 This is a schematic diagram of the pressure reduction tailing effect.
[0028] Explanation of reference numerals in the attached figures: W-Wafer; 10-Reaction Chamber; 20-Base; 31-Exhaust Port; 32-Vacuum Valve; 33-First Vacuum Pump; 34-Transition Chamber; 35-Dry Pump; 36-Negative Pressure End; 37-Second Vacuum Pump; 38-Bypass Channel; 40-Gas Source; 41-First Inlet End; 42-Second Inlet End; 51-First Opening Valve; 52-Second Opening Valve; 53-Auxiliary Exhaust Valve; 60-Negative Pressure Chamber; 61-Auxiliary Exhaust Port; 70-Control Unit; 71-Vacuum Gauge; 11-Central air path; 12-Edge air path; 13-Central nozzle; 14-Dielectric window; 15-Inlet valve; 16-Valve seat; 17-Air ring; 18-Cavity; 81-Source RF; 82-Bias RF; 83-RF coil. Detailed Implementation
[0029] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, specific embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.
[0030] Figure 1 This is a schematic diagram of the structure of the first type of semiconductor processing device provided in this embodiment. Figure 1 As shown, the semiconductor processing device includes a reaction chamber 10 with an exhaust port 31. The exhaust port 31 is connected to a vacuum pumping assembly to evacuate the reaction chamber 10. The reaction chamber 10 has a first air inlet 41 and a second air inlet 42, which alternately supply air to the reaction chamber 10 to alternately switch the pressure inside the reaction chamber 10 between high pressure and low pressure. The reaction chamber 10 also has an auxiliary exhaust port 61, which is connected to a negative pressure end 36. An auxiliary exhaust valve 53 is provided between the auxiliary exhaust port 61 and the negative pressure end 36, and the negative pressure end 36 is continuously evacuated. The auxiliary exhaust valve 53 is configured to open during the process of switching the reaction chamber 10 from high pressure to low pressure, thereby accelerating the switch from high pressure to low pressure.
[0031] In this semiconductor processing apparatus, a vacuum pumping assembly evacuates the reaction chamber 10 through an exhaust port 31. The reaction chamber 10 has a first inlet end 41 and a second inlet end 42, which can alternately supply gas to the reaction chamber 10, so that the pressure inside the reaction chamber 10 alternates between high pressure and low pressure. For example, the first inlet end 41 and the second inlet end 42 can share the same inlet or each have an independent inlet.
[0032] By opening an auxiliary exhaust port 61 connected to the negative pressure end 36 in the reaction chamber 10, and setting an auxiliary exhaust valve 53 between the auxiliary exhaust port 61 and the negative pressure end 36, the auxiliary exhaust valve 53 is closed when the reaction chamber 10 switches from low pressure to high pressure and stabilizes at the target pressure for the corresponding process, cutting off the connection between the reaction chamber 10 and the negative pressure end 36. At this time, since the negative pressure end 36 is continuously evacuated and loses its gas supply source, the negative pressure end 36 is quickly evacuated to a lower pressure. When the reaction chamber 10 switches from high pressure to low pressure, the auxiliary exhaust valve 53 is opened to connect the reaction chamber 10 and the negative pressure end 36. At this time, the reaction chamber 10 is not only depressurized by the vacuum assembly connected to the exhaust port 31, but also the reaction chamber 10 is connected to the lower pressure negative pressure end 36 connected to the auxiliary exhaust port 61, which accelerates the gas extraction in the reaction chamber 10, so as to facilitate the rapid switching from high pressure to low pressure.
[0033] This setup effectively shortens the time required for each switch from high pressure to low pressure in the reaction chamber 10, which helps to increase production capacity.
[0034] Please continue to refer to Figure 1 In this embodiment, a first opening valve 51, which can be a mass flow controller (MFC) or a pressure controller, can be provided upstream of the first air inlet 41 to control the air intake flow rate of the first air inlet 41; a second opening valve 52, which can also be a mass flow controller or a pressure controller, can be provided upstream of the second air inlet 42 to control the air intake flow rate of the second air inlet 42. The reaction chamber 10 is provided with a base 20 for supporting the wafer W. Both the first air inlet 41 and the second air inlet 42 are connected to a gas source 40. The first gas from the gas source 40 is supplied to the reaction chamber 10 via the first air inlet 41, and the second gas from the gas source 40 is supplied to the reaction chamber 10 via the second air inlet 42.
[0035] Please continue to refer to Figure 1 The vacuum assembly may include a vacuum valve 32 and a first vacuum pump 33. Specifically, the exhaust port 31 is connected to the first vacuum pump 33 through the vacuum valve 32. There is a transition chamber 34 between the vacuum valve 32 and the first vacuum pump 33. The negative pressure end 36 includes the aforementioned transition chamber 34.
[0036] During the semiconductor processing, vacuum valve 32 is open, and the first vacuum pump 33 continuously evacuates the reaction chamber 10. Since the transition chamber 34 is located between vacuum valve 32 and the first vacuum pump 33, it is unaffected by the opening of vacuum valve 32 during the operation of the first vacuum pump 33, and is directly and consistently evacuated by the first vacuum pump 33, forming a negative pressure end 36 with a lower pressure relative to the upstream side of vacuum valve 32. When the reaction chamber 10 switches from high pressure to low pressure, the auxiliary exhaust valve 53 opens. At this time, with the help of the lower negative pressure of the transition chamber 34, some of the gas in the reaction chamber 10 can be quickly removed, thereby accelerating the depressurization rate. Alternatively, when the gas in the reaction chamber 10 is in molecular flow, it can be understood that the relatively low-pressure volume of the negative pressure end 36 and the relatively high-pressure volume of the reaction chamber 10 are instantaneously connected, quickly establishing pressure balance and being evacuated by the first vacuum pump 33 together. The pressure difference between the negative pressure end 36 and the reaction chamber 10 is formed by the obstruction of the opening of the vacuum valve 32. It can be understood that the smaller the opening of the vacuum valve 32, the greater the pressure difference between the upstream and downstream sides of the vacuum valve 32, and the more obvious the effect of the negative pressure end 36 in assisting rapid pressure reduction.
[0037] This method of using the transition cavity 34 between the vacuum valve 32 of the vacuum assembly and the first vacuum pump 33 to form the negative pressure end 36 allows the first vacuum pump 33 to serve not only as the negative pressure source of the vacuum assembly but also as the negative pressure source of the negative pressure end 36. This enables the sharing of the negative pressure source of the negative pressure end 36 and the negative pressure source of the vacuum assembly, which not only reduces the number of components, saves space and cost, but also makes full use of the vacuum pumping capacity of the first vacuum pump 33 without the need for slow changes in the opening of the vacuum valve 32, facilitating rapid pressure switching.
[0038] Please continue to refer to Figure 1 The negative pressure end 36 may include a negative pressure cavity 60.
[0039] This configuration allows the negative pressure chamber 60 to form a lower pressure chamber relative to the reaction chamber 10 when the auxiliary exhaust valve 53 is closed, under the continuous vacuuming action of the first vacuum pump 33. When the auxiliary exhaust valve 53 is opened, the reaction chamber 10 and the negative pressure chamber 60 are connected and a pressure balance is quickly established, causing a rapid decrease in pressure in the reaction chamber 10. Compared to the first vacuum pump 33 directly evacuating the auxiliary exhaust port 61 through the transition chamber 34, this increases the size of the negative pressure space connected to the auxiliary exhaust port 61, forming a larger and more stable low-pressure volume, which is beneficial for steadily increasing the pressure reduction rate of the reaction chamber 10.
[0040] In addition, at the moment the auxiliary exhaust valve 53 is opened, because the molecular density of the reaction chamber 10 is higher than that of the negative pressure chamber 60, a large number of gas molecules in the reaction chamber 10 will enter the negative pressure chamber 60. The negative pressure chamber 60 can buffer these gas molecules, preventing them from being directly impacted by the first vacuum pump 33 and causing it to overload and fluctuate in performance. This provides a certain degree of protection for the first vacuum pump 33 and prevents it from overloading and slowing down, thus dragging down the overall pressure switching speed.
[0041] Figure 2 This is a schematic diagram of the structure of a second type of semiconductor processing device provided in an embodiment of this application. (See attached diagram.) Figure 2 As shown, in this semiconductor processing equipment, the vacuum assembly includes a vacuum valve 32, a first vacuum pump 33 and a dry pump 35. The exhaust port 31 is connected to the vacuum valve 32, the first vacuum pump 33 and the dry pump 35 in sequence. The negative pressure end 36 includes a pipeline connected in parallel with the first vacuum pump 33 and connected to the dry pump 35.
[0042] Please continue to refer to Figure 2 By incorporating a dry pump 35 connected to the first vacuum pump 33 within the vacuum assembly, coarse evacuation can be performed using the dry pump 35 to reduce the back pressure of the first vacuum pump 33, thereby enabling the first vacuum pump 33 to operate stably. During dry pump 35 operation, the pipeline connected in parallel to the first vacuum pump 33 to the dry pump 35 is at a lower pressure than the upstream side of the first vacuum pump 33, forming a negative pressure end 36. When the reaction chamber 10 needs to switch from high pressure to low pressure, the auxiliary exhaust valve 53 opens. At this time, the lower pressure negative pressure end 36 and the higher pressure reaction chamber 10 quickly establish pressure balance, causing the pressure in the reaction chamber 10 to drop rapidly.
[0043] This method of using the first vacuum pump 33 as the back pump as the negative pressure source of the negative pressure end 36 can also continuously evacuate the negative pressure end 36. Moreover, the evacuation process of the negative pressure end 36 does not depend on the first vacuum pump 33. Thus, when the reaction chamber 10 switches from high pressure to low pressure, the first vacuum pump 33 can concentrate on evacuating the reaction chamber 10 without reducing the pumping speed of the exhaust port 31 due to the opening of the auxiliary exhaust valve 53 to divert the flow.
[0044] Please continue to refer to Figure 2 In this semiconductor processing device, the negative pressure end 36 may also include a negative pressure cavity 60.
[0045] With the above Figure 1The principle of the semiconductor processing device shown is similar. When the auxiliary exhaust valve 53 is closed, the continuous vacuuming action of the dry pump 35 can also create a cavity with a lower pressure than the reaction chamber 10 in the negative pressure chamber 60. When the auxiliary exhaust valve 53 is open, the reaction chamber 10 and the negative pressure chamber 60 can be connected and pressure balance can be quickly established, causing a rapid drop in pressure in the reaction chamber 10. At the same time, the negative pressure chamber 60 can also buffer the high-density gas molecules in the reaction chamber 10 to prevent pressure fluctuations on the dry pump 35 side from being transmitted to the first vacuum pump 33.
[0046] Figure 3 This is a schematic diagram of the third type of semiconductor processing device provided for this example. Figure 3 As shown, in this semiconductor processing apparatus, the vacuum assembly includes a vacuum valve 32 and a first vacuum pump 33, and the exhaust port 31 is connected to the first vacuum pump 33 through the vacuum valve 32. The semiconductor processing apparatus also includes a second vacuum pump 37, which is connected to the negative pressure terminal 36 to continuously evacuate the negative pressure terminal 36.
[0047] With the above settings, the negative pressure source of the negative pressure end 36 and the negative pressure source of the vacuum pumping component are independent of each other, so that when the semiconductor processing equipment is working, the vacuum pumping process of the exhaust port 31 and the vacuum pumping process of the auxiliary exhaust port 61 can be controlled separately, and the control logic is simple.
[0048] Figure 4 This is a schematic diagram of the structure of the fourth type of semiconductor processing device provided in this embodiment. Figure 4 As shown, in this semiconductor processing device, the negative pressure end 36 also includes a negative pressure chamber 60.
[0049] With the above Figure 1 and Figure 2 The principle of the semiconductor processing device shown is similar. When the auxiliary exhaust valve 53 is closed, the continuous vacuum pumping action of the second vacuum pump 37 can also create a cavity with a lower pressure than the reaction chamber 10 in the negative pressure chamber 60. When the auxiliary exhaust valve 53 is opened, the reaction chamber 10 is connected to the negative pressure chamber 60, and a pressure balance is quickly established, causing a rapid drop in the pressure of the reaction chamber 10. At the same time, the negative pressure chamber 60 can also buffer the high-density gas molecules in the reaction chamber 10 to prevent pressure fluctuations on the dry pump 35 side from being transmitted to the second vacuum pump 37.
[0050] Figure 5 This is a schematic diagram of the structure of the fifth type of semiconductor processing device provided in this embodiment. Figure 5As shown, in this semiconductor processing device, one end of the second vacuum pump 37 is connected between the dry pump 35 and the first vacuum pump 33. That is, the dry pump 35 serves as both the pre-pump for the first vacuum pump 33 and the pre-pump for the second vacuum pump 37, thereby improving the stable operation of the first vacuum pump 33 and the second vacuum pump 37.
[0051] With this setting, a negative pressure end 36 can also be formed in the pipeline between the second vacuum pump 37 and the auxiliary exhaust valve 53 when the auxiliary exhaust valve 53 is closed, so that the reaction chamber 10 can be depressurized quickly when the auxiliary exhaust valve 53 is opened.
[0052] Figure 6 This is a schematic diagram of the sixth type of semiconductor processing device provided in this embodiment. Figure 6 As shown, in this semiconductor processing device, the negative pressure end 36 also includes a negative pressure chamber 60. Under the continuous vacuuming action of the dry pump 35 and the second vacuum pump 37, the negative pressure chamber 60 forms a cavity with a lower pressure than the reaction chamber 10. When the auxiliary exhaust valve 53 is opened, the reaction chamber 10 can communicate with the negative pressure chamber 60 and quickly establish a pressure balance, thereby rapidly reducing the pressure in the reaction chamber 10 and buffering the high-density gas molecules gushing out from the auxiliary exhaust port 61.
[0053] It should be noted that in the various forms of semiconductor processing equipment mentioned above, the negative pressure chamber 60 can be a pipe or tank with a certain volume. Preferably, the volume of the negative pressure chamber 60 is not less than 50% of the volume of the reaction chamber 10, so as to improve the effect of accelerating pressure reduction.
[0054] Figure 7 This is a schematic diagram of the structure of the seventh type of semiconductor processing device provided in this embodiment; Figure 8 for Figure 7 AA section view in the image. Figure 7 and Figure 8 As shown, in this embodiment, the reaction chamber 10 is provided with multiple auxiliary exhaust ports 61, and each auxiliary exhaust port 61 is connected to the negative pressure end 36 by a bypass channel 38, and each bypass channel 38 is provided with an auxiliary exhaust valve 53.
[0055] This configuration allows for simultaneous, multi-point venting via multiple auxiliary exhaust ports 61 when pressure reduction is required in the reaction chamber 10, thereby shortening the overall pressure reduction time and improving the uniformity of pressure distribution within the chamber. Furthermore, if one of the auxiliary exhaust valves 53 malfunctions, other auxiliary exhaust valves 53 can be used for pressure reduction, achieving redundancy and improving the operational reliability of the semiconductor processing equipment.
[0056] Please continue to refer to Figure 7 and Figure 8In this embodiment, multiple auxiliary exhaust ports 61 are arranged at intervals along the circumference of the reaction chamber 10.
[0057] By arranging multiple auxiliary exhaust ports 61 at intervals along the circumference of the reaction chamber 10, the gas in the reaction chamber 10 can be extracted from multiple positions along its circumference when it is necessary to reduce the pressure in the reaction chamber 10. This optimizes the airflow field inside the reaction chamber 10, improves the uniformity of pressure drop, and helps to form a more consistent pressure environment on the surface of the wafer W, thereby improving the uniformity of the process.
[0058] Please continue to refer to Figure 7 and Figure 8 In this embodiment, the negative pressure end 36 includes an annular cavity that is circumferentially connected.
[0059] This configuration increases the total effective volume of the negative pressure chamber 60 in the semiconductor processing device. The increased total effective volume means that a greater pressure difference can be maintained between the negative pressure chamber 60 and the reaction chamber 10 during a longer initial period in the depressurization phase, forming a larger and more stable low-pressure volume. This allows the pressure in the reaction chamber 10 to drop rapidly when the auxiliary exhaust valve 53 opens to connect the reaction chamber 10 and the negative pressure chamber 60, significantly improving the speed of depressurization in the initial and later stages.
[0060] In addition, by increasing the total effective volume of the negative pressure chamber 60 in the semiconductor processing device, the negative pressure chamber 60 can maintain an effective evacuation state for a longer period of time before the pressure in the negative pressure chamber 60 rises to a critical pressure close to the pressure of the reaction chamber 10, thereby facilitating the reduction of the pressure of the reaction chamber 10 from a higher pressure to a lower pressure.
[0061] In this embodiment, a negative pressure chamber 60 may be provided between each auxiliary exhaust valve 53 and the corresponding negative pressure end 36, so that each negative pressure chamber 60 is connected in the circumferential direction to form an annular cavity.
[0062] Please continue to refer to Figure 7 In this semiconductor processing apparatus, an annular cavity surrounds a transition cavity 34. This arrangement allows the annular cavity and the transition cavity 34 to be positioned at approximately the same height, reducing space occupancy in the vertical direction. Furthermore, it shortens the gas flow path from the transition cavity 34 to the annular cavity, thereby improving the vacuuming efficiency of the annular cavity.
[0063] Figure 9 This is a schematic diagram of the semiconductor processing device provided in this embodiment under a specific implementation. Figure 10 This is a schematic diagram of the semiconductor processing device provided in this embodiment under another specific implementation. (See diagram below.) Figure 9 and Figure 10As shown, in this embodiment, the first air inlet 41 is used to supply a first gas to the reaction chamber 10, and the first gas causes the reaction chamber 10 to operate at a first target pressure. The second air inlet 42 is used to supply a second gas to the reaction chamber 10, and the second gas causes the reaction chamber 10 to operate at a second target pressure, which is lower than the first target pressure. The auxiliary exhaust port 61 and the second air inlet 42 are located on different walls of the reaction chamber 10.
[0064] When the semiconductor processing equipment is operating, the first inlet end 41 supplies a first gas to the reaction chamber 10, using the first gas to operate the reaction chamber 10 at a first target pressure. The second inlet end 42 supplies a second gas to the reaction chamber 10, using the second gas to operate the reaction chamber 10 at a second target pressure. The second target pressure is lower than the first target pressure. When switching to supply gas using the second inlet end 42, the auxiliary exhaust port 61 is opened, and the negative pressure state pre-established by the negative pressure end 36 rapidly reduces the pressure in the reaction chamber 10.
[0065] By setting the auxiliary exhaust port 61 and the second air inlet 42 on different walls of the reaction chamber 10, the auxiliary exhaust port 61 and the second air inlet 42 can be isolated to a certain extent, preventing the second gas entering through the second air inlet 42 from being directly discharged through the auxiliary exhaust port 61 when the second gas is supplied to the reaction chamber 10 using the second air inlet 42, thus failing to achieve the process objective.
[0066] In this embodiment, the interior of the reaction chamber 10 includes a reaction zone located above the wafer W, wherein the auxiliary exhaust port 61 is disposed close to the reaction zone.
[0067] By positioning the auxiliary exhaust port 61 close to the reaction zone above the wafer W, the pressure in the reaction zone can be rapidly reduced, and the first gas in the reaction zone can be vented, so that the second gas entering through the second intake port 42 can flow smoothly into the reaction zone to participate in the process reaction.
[0068] Please continue to refer to Figure 9 Specifically, the auxiliary exhaust port 61 may be located on the side wall of the reaction chamber 10, and the second air intake end 42 may be located on the top wall of the reaction chamber 10.
[0069] By setting the second gas inlet 42 on the top wall of the reaction chamber 10, when the second gas enters, under viscous flow conditions, the byproducts and residual first gas in the reaction chamber 10 can be pushed out from the auxiliary exhaust port 61 on the side wall along the pressure gradient direction, thereby increasing the gas exchange rate and the concentration of the second gas in the reaction zone above the wafer and improving the process results.
[0070] Please continue to refer to Figure 9In this embodiment, the reaction chamber 10 includes a cavity 18 with a top opening and a dielectric window 14 that is closed off from the top opening. A second gas inlet 42 supplies a second gas to the cavity 18 through the dielectric window 14. A valve seat 16 is provided at the top of the cavity 18, forming a first gas inlet 41. The valve seat 16 is also equipped with a gas inlet valve 15 for controlling the opening and closing of the first gas inlet 41. A gas source 40 supplies gas to the first gas inlet 41 through an edge gas path 12 and to the second gas inlet 42 through a central gas path 11 and a central nozzle 13. To improve the uniformity of gas intake at the first gas inlet 41, a gas ring 17 is provided downstream of the valve seat 16. The gas ring 17 has multiple circumferentially arranged gas inlets to improve the uniformity of gas intake at the first gas inlet 41. A source radio frequency 81 is installed above the reaction chamber 10, and a bias radio frequency 82 is installed to the side of the reaction chamber 10.
[0071] Please continue to refer to Figure 10 Specifically, the auxiliary exhaust port 61 can be located on the top wall of the reaction chamber 10, and the second air intake end 42 can be located on the side wall of the reaction chamber 10.
[0072] By placing the second air inlet 42 on the side wall of the reaction chamber 10, the second gas can enter the reaction chamber 10 horizontally or tangentially. This helps the second gas form a transverse purging airflow in the reaction chamber 10, driving residual by-products and waste gas upwards to the auxiliary exhaust port 61 on the top wall. This allows for a faster establishment of a pure ignition gas environment and improves the ignition success rate. Furthermore, the auxiliary exhaust port 61 on the top wall of the reaction chamber 10 allows light gaseous by-products, heat, and volatile substances generated during the reaction to be naturally discharged upwards using thermal buoyancy, preventing them from accumulating at the top of the reaction chamber 10 and interfering with the process.
[0073] Please continue to refer to Figure 10 In this embodiment, the reaction chamber 10 also includes a cavity 18 with a top opening and a dielectric window 14 that is closed off from the top opening. The first air inlet 41 and the second air inlet 42 are both supplied with air from the side of the cavity 18, and an auxiliary exhaust port 61 is opened on the dielectric window 14. Specifically, a valve seat 16 is provided at the top of the cavity 18, forming the first air inlet 41 and the second air inlet 42, and the valve seat 16 is provided with an air inlet valve 15 for controlling the opening and closing of the corresponding air passages. To improve the uniformity of air intake at the first air inlet 41 and the second air inlet 42, an air ring 17 is also provided downstream of the valve seat 16. The air ring 17 has multiple air inlets arranged circumferentially to improve the uniformity of air intake at the first air inlet 41 and the second air inlet 42. The source radio frequency 81 is installed above the reaction chamber 10, the bias radio frequency 82 is installed to the side of the reaction chamber 10, and the radio frequency coil 83 is installed at the top of the dielectric window 14.
[0074] In this application, the auxiliary exhaust valve 53 can be a diaphragm valve, such as an atomic layer deposition (ALD) valve.
[0075] By setting the auxiliary exhaust valve 53 as an ALD valve, the response speed of the auxiliary exhaust valve 53 can be effectively improved. When it is necessary to switch the reaction chamber 10 from high pressure to low pressure, the millisecond-level fast response of the ALD valve can be used to improve the opening speed of the auxiliary exhaust port 61, thereby further shortening the time required for each switch of the reaction chamber 10 from high pressure to low pressure.
[0076] Please continue to refer to Figure 1 In this embodiment, a vacuum gauge 71 can be installed in the reaction chamber 10. The vacuum gauge 71 can be used to detect the vacuum level of the reaction chamber 10.
[0077] Please continue to refer to Figure 1 In this embodiment, the semiconductor processing device may further include a control unit 70, wherein the value detected by the vacuum gauge 71 can be output to the control unit 70, and the control unit 70 controls the opening time of the auxiliary exhaust valve 53 and the first air inlet 41 and the second air inlet 42, and controls the opening degree of the vacuum valve 32 and the operation of the first vacuum pump 33.
[0078] Figure 11 A flowchart illustrating the control method provided in an embodiment of this application. Figure 11 As shown, this embodiment also provides a control method applied to the above-mentioned semiconductor processing equipment, the control method comprising: S100: In the first stage, the first gas inlet 41 is controlled to supply a first gas to the reaction chamber 10. The first gas causes the reaction chamber 10 to operate at a first target pressure in order to carry out a first process reaction based on the first gas.
[0079] Figure 12 This is a diagram showing the relationship between the pressure in the reaction chamber 10 and the opening / closing of the auxiliary exhaust valve 53, corresponding to the control method provided in this embodiment. Figure 12 As shown, at the beginning of the first stage, the auxiliary exhaust valve 53 is closed, and the first air inlet 41 begins to introduce the first gas into the reaction chamber 10, causing the pressure in the reaction chamber 10 to rise from the second target pressure P2 to the first target pressure P1. After the first process reaction is completed, the first air inlet 41 stops supplying gas, the first stage ends, and the second stage begins.
[0080] S200: In the second stage, the second gas inlet 42 is controlled to supply a second gas to the reaction chamber 10. The second gas causes the reaction chamber 10 to operate at a second target pressure to carry out a second process reaction based on the second gas. The second target pressure is less than the first target pressure.
[0081] Please continue to refer to Figure 12At the start of the second stage, the pressure in the reaction chamber 10 decreases from the first target pressure P1 to the second target pressure P2. The second air inlet 42 can supply gas at the start of the second stage, or it can supply gas earlier or later. After the second process reaction has proceeded, the second air inlet 42 stops supplying gas, the second stage ends, and the first stage begins, thus repeating the cycle.
[0082] S300: During the process of switching the reaction chamber 10 from the first target pressure to the second target pressure, the auxiliary exhaust valve 53 is opened to accelerate the switching of the reaction chamber 10 from the first target pressure to the second target pressure.
[0083] During the process of switching the reaction chamber 10 from the first target pressure to the second target pressure, that is, during the depressurization process of the reaction chamber 10, the auxiliary exhaust valve 53 is opened, which allows the reaction chamber 10 to be connected to the negative pressure end 36 through the auxiliary exhaust port 61. At this time, the reaction chamber 10 is not only depressurized through the vacuum assembly connected to the exhaust port 31, but also, because the negative pressure end 36 is continuously evacuated, the reaction chamber 10 is connected to the lower pressure negative pressure end 36 connected to the auxiliary exhaust port 61. The connection between the reaction chamber 10 and the negative pressure end 36 establishes pressure balance, accelerates the extraction of gas from the reaction chamber 10, and thus accelerates the switching of the reaction chamber 10 from the first target pressure to the second target pressure, thereby shortening the time required for each switch of the reaction chamber 10 from high pressure to low pressure, and improving production capacity.
[0084] In this control method, in the first stage, the auxiliary exhaust valve 53 is closed, and the pressure at the negative pressure end 36 is less than the second target pressure, allowing the pressure in the reaction chamber 10 to rise rapidly.
[0085] By setting the auxiliary exhaust valve 53 to be closed in the first stage, gas leakage from the reaction chamber 10 through the auxiliary exhaust valve 53 can be avoided in the first stage. By setting the pressure of the negative pressure end 36 to be lower than the second target pressure, the negative pressure end 36 can maintain a lower pressure state during the switching process of the reaction chamber 10 from the first target pressure to the second target pressure. When the reaction chamber 10 and the negative pressure end 36 are connected through the auxiliary exhaust port 61, the pressure balance established between the reaction chamber 10 and the negative pressure end 36 can be used to make the pressure of the reaction chamber 10 drop rapidly to a pressure lower than the second target pressure, thereby achieving a rapid switching from the first target pressure to the second target pressure.
[0086] It is understandable that the closing phase of the auxiliary exhaust valve 53 coincides with the continuous pressure reduction phase of the negative pressure end 36. To keep the pressure at the negative pressure end 36 as low as possible and improve the pressure reduction effect on the reaction chamber 10 after the auxiliary exhaust valve 53 is opened, it is advantageous to open the auxiliary exhaust valve 53 only during the transition from the first target pressure to the second target pressure in the reaction chamber 10. This avoids the negative pressure end 36 affecting the pressure stability of the second-stage process and allows the negative pressure end 36 sufficient time to reduce pressure, providing vacuum reserves for the next pressure transition from high to low pressure.
[0087] It is understandable that the opening phase of the auxiliary exhaust valve 53 can be located at any moment during the process of switching the reaction chamber 10 from the first target pressure to the second target pressure, or it can be the entire switching process or a part of the time.
[0088] In one embodiment, the auxiliary exhaust valve 53 can be opened only in the first half of the entire switching process, considering that the pressure difference between the negative pressure end 36 and the reaction chamber 10 is the largest at this time, and the auxiliary pressure reduction and acceleration effect is the most obvious. The auxiliary exhaust valve 53 is closed at other times to store low pressure.
[0089] In one embodiment, the auxiliary exhaust valve 53 is opened only in the latter half of the entire switching process, during which the pressure drop is slowest and a tailing effect occurs. Figure 12 As shown, the pressure curve between the dashed lines T1 and T2 can be considered as the existing tailing effect. Opening the auxiliary exhaust valve 53 at this time helps the pressure quickly stabilize to the second target pressure P2, which is the opening pressure process window for the second stage. The auxiliary exhaust valve 53 remains closed at other times to store low pressure. Specifically, when the volume of the negative pressure end 36 is limited, the limited volume cannot work effectively throughout the switching process. If the auxiliary exhaust valve 53 is opened near the first target pressure P1, there is a risk that the pressure at the negative pressure end 36 will rapidly rise above the second target pressure P2. In this case, the tailing effect at the negative pressure end 36 will be exacerbated, making it difficult for the pressure to quickly stabilize to the second target pressure P2, thus shortening the process window. By opening the auxiliary exhaust valve 53 only in the latter half of the entire switching process, the pressure inside the cavity when the auxiliary exhaust valve 53 is opened is between the first target pressure P1 and the second target pressure P2, and the pressure moves further away from the first target pressure P1 and closer to the second target pressure P2 in the tailing zone. At this time, the connection of the negative pressure end 36 can effectively interrupt the tailing effect, so that the pressure can be quickly stabilized to the second target pressure P2, and improve the process efficiency and quality by opening the pressure process window in the second stage.
[0090] While this application discloses the above information, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this application; therefore, the scope of protection of this application shall be determined by the scope defined in the claims.
Claims
1. A semiconductor processing apparatus, characterized in that, The reaction chamber (10) includes an exhaust port (31) connected to a vacuum assembly for evacuating the reaction chamber (10); the reaction chamber (10) has a first air inlet (41) and a second air inlet (42), which alternately supply air to the reaction chamber (10) to alternately switch the pressure in the reaction chamber (10) between high pressure and low pressure; the reaction chamber (10) is provided with an auxiliary exhaust port (61), which is connected to a negative pressure end (36), and an auxiliary exhaust valve (53) is provided between the auxiliary exhaust port (61) and the negative pressure end (36), and the negative pressure end (36) is continuously evacuated; the auxiliary exhaust valve (53) is configured to open during the process of switching the reaction chamber (10) from high pressure to low pressure, so as to accelerate the switching of the reaction chamber (10) from high pressure to low pressure.
2. The semiconductor processing apparatus according to claim 1, characterized in that, The vacuum assembly includes a vacuum valve (32) and a first vacuum pump (33). The exhaust port (31) is connected to the first vacuum pump (33) through the vacuum valve (32). There is a transition chamber (34) between the vacuum valve (32) and the first vacuum pump (33). The negative pressure end (36) includes the transition chamber (34).
3. The semiconductor processing apparatus according to claim 1, characterized in that, The vacuum assembly includes a vacuum valve (32), a first vacuum pump (33) and a dry pump (35). The exhaust port (31) is connected to the dry pump (35) in sequence through the vacuum valve (32), the first vacuum pump (33), and the dry pump (35). The negative pressure end (36) includes a pipeline connected in parallel with the first vacuum pump (33) to the dry pump (35).
4. The semiconductor processing apparatus according to claim 1, characterized in that, The vacuum assembly includes a vacuum valve (32) and a first vacuum pump (33), and the exhaust port (31) is connected to the first vacuum pump (33) through the vacuum valve (32); the semiconductor processing device also includes a second vacuum pump (37), which is connected to the negative pressure end (36) to continuously evacuate the negative pressure end (36).
5. The semiconductor processing apparatus according to any one of claims 1-4, characterized in that, The negative pressure end (36) includes a negative pressure cavity (60).
6. The semiconductor processing apparatus according to claim 5, characterized in that, The reaction chamber (10) is provided with multiple auxiliary exhaust ports (61), and each of the auxiliary exhaust ports (61) is connected to the negative pressure end (36) by a bypass channel (38), and each of the bypass channels (38) is provided with an auxiliary exhaust valve (53).
7. The semiconductor processing apparatus according to claim 6, characterized in that, Multiple auxiliary exhaust ports (61) are arranged at circumferential intervals along the reaction chamber (10).
8. The semiconductor processing apparatus according to claim 7, characterized in that, The negative pressure end (36) includes an annular cavity that is circumferentially connected.
9. The semiconductor processing apparatus according to claim 1, characterized in that, The first air inlet (41) is used to supply a first gas to the reaction chamber (10), the first gas causing the reaction chamber (10) to operate at a first target pressure; the second air inlet (42) is used to supply a second gas to the reaction chamber (10), the second gas causing the reaction chamber (10) to operate at a second target pressure, the second target pressure being lower than the first target pressure; the auxiliary exhaust port (61) and the second air inlet (42) are located on different walls of the reaction chamber (10).
10. The semiconductor processing apparatus according to claim 9, characterized in that, The auxiliary exhaust port (61) is located on the side wall of the reaction chamber (10), and the second air inlet (42) is located on the top wall of the reaction chamber (10).
11. The semiconductor processing apparatus according to claim 9, characterized in that, The auxiliary exhaust port (61) is located on the top wall of the reaction chamber (10), and the second air inlet (42) is located on the side wall of the reaction chamber (10).
12. The semiconductor processing apparatus according to claim 5, characterized in that, The volume of the negative pressure chamber (60) is not less than 50% of the volume of the reaction chamber (10).
13. A control method, characterized in that, The control method, applied to the semiconductor processing apparatus according to any one of claims 1-12, comprises: In the first stage, the first gas inlet (41) is controlled to supply a first gas to the reaction chamber (10), and the first gas causes the reaction chamber (10) to operate at a first target pressure to carry out a first process reaction based on the first gas. In the second stage, the second gas inlet (42) is controlled to supply a second gas to the reaction chamber (10), which causes the reaction chamber (10) to operate at a second target pressure to carry out a second process reaction based on the second gas; the second target pressure is less than the first target pressure; During the process of switching the reaction chamber (10) from the first target pressure to the second target pressure, the auxiliary exhaust valve (53) is opened to accelerate the switching of the reaction chamber (10) from the first target pressure to the second target pressure.
14. The control method according to claim 13, characterized in that, In the first stage, the auxiliary exhaust valve (53) is closed, and the pressure at the negative pressure end (36) is less than the second target pressure.
15. The control method according to claim 13, characterized in that, The auxiliary exhaust valve (53) is opened only during the first half of the process in which the reaction chamber (10) switches from the first target pressure to the second target pressure.
16. The control method according to claim 13, characterized in that, The auxiliary exhaust valve (53) is opened only during the latter half of the process in which the reaction chamber (10) switches from the first target pressure to the second target pressure.