Heat treatment apparatus and heat treatment method

Abstract

The present application provides a kind of heat treatment device and heat treatment method that can give consideration to the heat insulation of heat insulation structure and etching resistance.The heat treatment device of the technical scheme of the present disclosure has: a processing container having an opening at the lower end;A cover for opening and closing the opening of the processing container;A heater is arranged around the processing container;And a heat insulation structure is arranged on the cover, the heat insulation structure has a first plate body, and a second plate body and a third plate body arranged in a manner of sandwiching the first plate body in the thickness direction, the first plate body, the second plate body and the third plate body have a flat plate formed by quartz, and the first plate body includes a supply port supplied with non-active gas and a communication hole communicated from the supply port to the outer peripheral surface.

Description

Technical Field

[0001] This disclosure relates to heat treatment apparatus and heat treatment methods. Background Technology

[0002] Patent Document 1 discloses the following technology: In a vertical heat treatment apparatus, an insulation structure comprising an opaque quartz insulation plate that prevents the transmission of heat rays is used to improve the insulation effect of the furnace opening at the bottom of the heat treatment furnace. The aforementioned insulation structure utilizes a transparent quartz layer to cover the surface of the opaque quartz insulation plate.

[0003] [Existing Technical Documents]

[0004] [Patent Literature]

[0005] Patent Document 1: Japanese Patent Application Publication No. 11-97360 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique that can balance the thermal insulation and etch resistance of thermal insulation structures.

[0008] [Methods used to solve problems]

[0009] A heat treatment apparatus according to the present disclosure comprises: a treatment container having an opening at its lower end; a cover for opening and closing the opening of the treatment container; a heater disposed around the treatment container; and an insulating structure disposed on the cover, the insulating structure having a first plate and a second and a third plate disposed such that the first plate is sandwiched in the thickness direction, the first, second and third plates having a flat plate shape formed of quartz, the first plate including a supply port for supplying an inactive gas and a connecting hole communicating from the supply port to an outer peripheral surface.

[0010] [Invention Effects]

[0011] According to this disclosure, both the thermal insulation and etching resistance of the thermal insulation structure can be achieved. Attached Figure Description

[0012] Figure 1 This is a vertical sectional view of the heat treatment apparatus according to the embodiment.

[0013] Figure 2 This is a horizontal cross-sectional view of the heat treatment apparatus according to the embodiment.

[0014] Figure 3 This indicates that it is set in Figure 1 A vertical sectional view of the wafer boat support structure of the heat treatment apparatus.

[0015] Figure 4 It means Figure 3 A vertical sectional view of the thermal insulation structure.

[0016] Figure 5 It means Figure 3 A horizontal sectional view of the thermal insulation structure.

[0017] Figure 6 This is a vertical sectional view showing a modified example of a wafer boat support structure.

[0018] Figure 7 It means Figure 6 A vertical sectional view of the thermal insulation structure.

[0019] Figure 8 It means Figure 6 A horizontal sectional view of the thermal insulation structure.

[0020] Explanation of reference numerals in the attached figures

[0021] 1. Heat treatment apparatus; 10. Processing container; 10a. Opening; 21. Cover; 50. Heater; 60, 160. Insulation structure; 61, 161. First plate; 61a, 161a. Supply port; 62, 162. Second plate; 63, 163. Third plate. Detailed Implementation

[0022] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are labeled with the same or corresponding reference numerals, and repeated descriptions are omitted.

[0023] [Heat treatment apparatus]

[0024] Reference Figure 1 and Figure 2 The heat treatment apparatus 1 of the embodiment will be described. Figure 1 This is a vertical sectional view of the heat treatment apparatus 1 according to the embodiment. Figure 2 This is a horizontal cross-sectional view of the heat treatment apparatus 1 according to the embodiment.

[0025] The heat treatment apparatus 1 is a batch processing apparatus that processes multiple substrates W at once. The substrates W are, for example, semiconductor wafers. The heat treatment apparatus 1 includes a processing container 10, a gas supply unit 30, an exhaust unit 40, a heater 50, and a control unit 90.

[0026] The processing container 10 is capable of depressurizing its interior. The processing container 10 houses the substrate W. The processing container 10 has an inner tube 11 and an outer tube 12. The inner tube 11 has a topped cylindrical shape with an open lower end. The outer tube 12 has a topped cylindrical shape with an open lower end that covers the outside of the inner tube 11. The inner tube 11 and outer tube 12 are formed of a heat-resistant material such as quartz. The inner tube 11 and outer tube 12 have a coaxially arranged double-tube structure.

[0027] A receiving portion 13 for accommodating a gas supply pipe is formed on the side wall of the inner tube 11 along the length direction (vertical direction). For example, a portion of the side wall of the inner tube 11 is made to protrude outward to form a protrusion 14, and the receiving portion 13 is formed inside the protrusion 14.

[0028] A rectangular opening 15 is formed along the length of the side wall of the inner tube 11. The opening 15 is opposite to the receiving part 13.

[0029] The opening 15 is a gas exhaust port formed to exhaust gas from the inner tube 11. The length of the opening 15 is the same as the length of the wafer boat 16, or it is formed to be longer than the length of the wafer boat 16 and extends in both the upward and downward directions.

[0030] The lower end of the processing container 10 is supported by a cylindrical manifold 17. The manifold 17 is made of, for example, stainless steel. A flange 18 is formed at the upper end of the manifold 17. The flange 18 supports the lower end of the outer tube 12. A sealing member 19, such as an O-ring, is provided between the flange 18 and the lower end of the outer tube 12. Thus, the interior of the outer tube 12 is maintained as airtight.

[0031] A ring-shaped support portion 20 is provided on the inner wall of the upper part of the manifold 17. The support portion 20 supports the lower end of the inner tube 11.

[0032] The cover 21 is airtightly installed at the lower opening of the manifold 17 via a sealing member 22 such as an O-ring. Thus, the lower opening 10a of the processing container 10, i.e., the opening of the manifold 17, is airtightly blocked. The cover 21 is, for example, made of stainless steel.

[0033] A rotating shaft 24 is provided through the central part of the cover 21 via a magnetic fluid seal 23. The lower part of the rotating shaft 24 is rotatably supported on the arm 25A of the lifting mechanism 25, which is composed of a wafer boat lifting mechanism.

[0034] A rotating plate 26 is provided at the upper end of the rotating shaft 24. A wafer boat 16 is placed on the rotating plate 26 with a heat-insulating structure 60 in between. The wafer boat 16 rotates by rotating the rotating shaft 24. The wafer boat 16 moves up and down integrally with the cover 21 by raising and lowering the lifting mechanism 25. Thus, the wafer boat 16 is inserted into and removed from the processing container 10. The wafer boat 16 can be accommodated within the processing container 10. The wafer boat 16 holds a plurality of substrates W in a shelf-like manner. The wafer boat 16 holds a plurality of substrates W approximately horizontally with intervals in the vertical direction. The number of substrates W held in the wafer boat 16 is not limited, for example, 5 or more and 200 or less.

[0035] The gas supply unit 30 is configured to supply various processing gases into the inner tube 11. The gas supply unit 30 includes a first gas supply unit 31, a second gas supply unit 32, and a third gas supply unit 33.

[0036] The first gas supply unit 31 has a gas supply pipe 31a inside the processing container 10 and a supply flow path 31b outside the processing container 10. In the supply flow path 31b, a first gas source 31c, a mass flow controller 31d, and a valve 31e are arranged sequentially from upstream to downstream in the gas flow direction. Thus, the supply time of the first gas from the first gas source 31c is controlled by the valve 31e, and the mass flow controller 31d adjusts it to a predetermined flow rate. The first gas flows into the gas supply pipe 31a from the supply flow path 31b and is ejected into the processing container 10 from the gas supply pipe 31a.

[0037] The second gas supply unit 32 has a gas supply pipe 32a inside the processing container 10 and a supply flow path 32b outside the processing container 10. In the supply flow path 32b, a second gas source 32c, a mass flow controller 32d, and a valve 32e are arranged sequentially from upstream to downstream in the gas flow direction. Thus, the supply time of the second gas from the second gas source 32c is controlled by the valve 32e, and the mass flow controller 32d adjusts it to a predetermined flow rate. The second gas flows into the gas supply pipe 32a from the supply flow path 32b and is ejected into the processing container 10 from the gas supply pipe 32a.

[0038] The third gas supply unit 33 has a gas supply pipe 33a inside the processing container 10 and a supply flow path 33b outside the processing container 10. In the supply flow path 33b, a third gas source 33c, a mass flow controller 33d, and a valve 33e are arranged sequentially from upstream to downstream in the gas flow direction. Thus, the supply time of the third gas from the third gas source 33c is controlled by the valve 33e, and the mass flow controller 33d adjusts it to a predetermined flow rate. The third gas flows into the gas supply pipe 33a from the supply flow path 33b and is ejected into the processing container 10 from the gas supply pipe 33a.

[0039] Each gas supply pipe 31a, 32a, and 33a is fixed to the manifold 17. Each gas supply pipe 31a, 32a, and 33a is, for example, formed of quartz. Each gas supply pipe 31a, 32a, and 33a extends in a straight line along the vertical direction near the inner pipe 11, and then bends in an L-shape within the manifold 17, extending horizontally and thus penetrating the manifold 17. The gas supply pipes 31a, 32a, and 33a are arranged circumferentially around the inner pipe 11, forming at the same height.

[0040] Multiple nozzles 31f, 32f, and 33f are provided within the inner tube 11 of each of the gas supply pipes 31a, 32a, and 33a. Each nozzle 31f, 32f, and 33f is formed at predetermined intervals along the extending direction of each gas supply pipe 31a, 32a, and 33a. Each nozzle 31f, 32f, and 33f horizontally ejects gas from the outer side of the substrate W in the radial direction toward the substrate W. Each nozzle 31f, 32f, and 33f ejects gas parallel to the main surface of the substrate W. The spacing between the nozzles is, for example, set to be the same as the spacing between the substrates W held in the wafer boat 16. The position of each nozzle in the height direction is, for example, set at the midpoint between adjacent substrates W in the vertical direction. In this case, each nozzle can efficiently supply gas to the opposite surfaces between adjacent substrates W.

[0041] The types of the first, second, and third gases are not particularly limited, and may include film-forming gases, cleaning gases, and inactive gases. The gas supply unit 30 may also mix multiple gases and eject the mixed gas from a single gas supply pipe. The gas supply pipes 31a, 32a, and 33a may also have different shapes and arrangements. The gas supply unit 30 may also include gas supply pipes for supplying other gases.

[0042] The exhaust section 40 exhausts the gas that exits from the inner tube 11 through the opening 15 and through the space P1 between the inner tube 11 and the outer tube 12, exiting through the gas outlet 41. The gas outlet 41 is formed on the upper side wall of the manifold 17 and above the support 20. An exhaust flow path 42 is connected to the gas outlet 41. A valve 43 and a vacuum pump 44 are sequentially installed in the exhaust flow path 42, enabling the exhaust of gas from the processing container 10.

[0043] Heater 50 is disposed around outer tube 12. Heater 50 is disposed, for example, on base plate 28. Heater 50 has a cylindrical shape so as to cover outer tube 12. Heater 50 heats each substrate W within processing container 10.

[0044] The control unit 90 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control unit 90 executes various control actions described in this application specification by executing command codes stored in memory or by designing circuits for special purposes.

[0045] [Wafer Boat Support Structure]

[0046] Reference Figures 3 to 5 , for setting Figure 1 The wafer boat support structure 2 of the heat treatment apparatus 1 will be described. Figure 3 This indicates that it is set in Figure 1 A vertical sectional view of the wafer boat support structure 2 of the heat treatment apparatus 1. Figure 4 It means Figure 3 Vertical sectional view of the thermal insulation structure 60. Figure 5 It means Figure 3 A horizontal sectional view of the thermal insulation structure 60. Figure 5 Equivalent to Figure 4 A cross-sectional view along the VV line. Figure 4 and Figure 5 In the diagram, arrows F1, F2, F3, and F4 represent the flow of inactive gases.

[0047] The wafer boat support structure 2 includes a cover 21, a sealing member 22, a magnetic fluid seal 23, a rotating shaft 24, a lifting mechanism 25, a rotating plate 26, a wafer boat support 27, a heat insulation structure 60, and an inactive gas supply section 70. The cover 21, sealing member 22, magnetic fluid seal 23, rotating shaft 24, lifting mechanism 25, and rotating plate 26 are as described above.

[0048] The wafer boat support 27 is cylindrical. The wafer boat support 27 is disposed between the rotating plate 26 and the wafer boat 16. The wafer boat support 27 supports the wafer boat 16 from below on the rotating plate 26. The lower end of the wafer boat support 27 can also be connected to the upper surface of the rotating plate 26. The upper end of the wafer boat support 27 can also be connected to the lower surface of the wafer boat 16.

[0049] The thermal insulation structure 60 has a first plate 61, a second plate 62, a third plate 63, and a support column 64.

[0050] The first plate 61 is circular in shape. The first plate 61 is formed of quartz. The first plate 61 includes a supply port 61a and an annular flow path 61b.

[0051] The supply port 61a is located away from the center of the first plate 61 when viewed from above. The supply port 61a is connected to the supply flow path 64a, which will be described later. Inactive gas is supplied from the inactive gas supply unit 70 to the supply port 61a via the supply flow path 64a.

[0052] The annular flow path 61b is annular when viewed from above. The annular flow path 61b is connected to the supply port 61a. The inert gas supplied from the supply port 61a flows through the annular flow path 61b.

[0053] The first plate 61 has a connecting hole that extends from the annular flow path 61b to the outer peripheral surface 61c of the first plate 61. Thus, inactive gas flowing in the annular flow path 61b is ejected into the processing container 10 from the outer peripheral surface 61c of the first plate 61 through the connecting hole. Furthermore, the first plate 61 has a connecting hole that extends from the annular flow path 61b to the inner peripheral surface 61d of the first plate 61. Thus, inactive gas flowing in the annular flow path 61b is ejected into the processing container 10 from the inner peripheral surface 61d of the first plate 61 through the connecting hole. The connecting hole is formed, for example, by connecting multiple pores contained in the quartz. The first plate 61 is formed, for example, of high-porosity quartz. High-porosity quartz has high reflectivity and low thermal conductivity. Therefore, heat loss based on thermal radiation can be reduced, and heat loss based on thermal conduction can also be reduced. The porosity of the high-porosity quartz is preferably 20% or more, more preferably 50% or more. As an example of high-porosity quartz, a quartz with a pore size of 200 μm, a porosity of 80%, a reflectivity of 0.9, and a thermal conductivity of 0.11 W / m·K is cited.

[0054] The second plate 62 has a circular shape with approximately the same outer diameter as the first plate 61. The second plate 62 is formed of quartz. The second plate 62 covers the lower surface of the first plate 61. The second plate 62 is in contact with the lower surface of the first plate 61. The second plate 62 may also be fused to the lower surface of the first plate 61. The porosity of the second plate 62 may also be lower than that of the first plate 61. Quartz with low porosity has high resistance to etching by cleaning gases. Therefore, the second plate 62 prevents the lower surface of the first plate 61 from being etched by cleaning gases. As a result, the generation of particles caused by etching of the first plate 61 can be prevented. The second plate 62 may be formed, for example, of transparent quartz. Transparent quartz has low porosity and high resistance to etching by cleaning gases.

[0055] The third plate 63 has a circular plate shape with approximately the same outer diameter as the first plate 61. The third plate 63 is formed of quartz. The third plate 63 covers the upper surface of the first plate 61. The third plate 63 is in contact with the upper surface of the first plate 61. The third plate 63 may also be fused to the upper surface of the first plate 61. The porosity of the third plate 63 may also be lower than that of the first plate 61. Quartz with low porosity has high resistance to etching by cleaning gases. Therefore, the third plate 63 prevents the upper surface of the first plate 61 from being etched by cleaning gases. As a result, the generation of particles caused by etching of the first plate 61 can be prevented. The third plate 63 is, for example, formed of transparent quartz. Transparent quartz has low porosity and high resistance to etching by cleaning gases. The third plate 63 is, for example, formed of the same material as the second plate 62.

[0056] The first plate 61, the second plate 62, and the third plate 63 are arranged such that the first plate 61 is sandwiched between the second plate 62 and the third plate 63 in the thickness direction. This forms a laminate 65. A through hole 65h extending in the thickness direction is provided in the laminate 65. The through hole 65h is located at the center of the laminate 65 when viewed from above. The wafer boat support 27 extends through the through hole 65h in the thickness direction of the laminate 65.

[0057] The support column 64 is cylindrical. It extends from below the cover 21, passing through the cover 21 and connecting to the lower surface of the laminate 65. The support column 64 supports the laminate 65 from below. Multiple supports 64 may be arranged along the circumference of the laminate 65. The support column 64 has an internal supply flow path 64a. The supply flow path 64a communicates with an annular flow path 61b via a supply port 61a. The supply flow path 64a supplies inert gas supplied from the inert gas supply section 70 to the annular flow path 61b.

[0058] The inactive gas supply unit 70 supplies inactive gas to the supply flow path 64a. As shown by arrow F1, the inactive gas from the inactive gas supply unit 70 flows upward through the supply flow path 64a into the annular flow path 61b. The inactive gas flowing into the annular flow path 61b flows along the annular flow path 61b as shown by arrow F2, and is ejected from the outer peripheral surface 61c of the first plate 61 into the processing container 10 through the connecting holes within the first plate 61 as shown by arrow F3. Furthermore, the inactive gas flowing into the annular flow path 61b flows along the annular flow path 61b as shown by arrow F2, and is ejected from the inner peripheral surface 61d of the first plate 61 into the processing container 10 through the connecting holes within the first plate 61 as shown by arrow F4. The inactive gas flows within the connecting holes in the first plate 61, thereby reducing heat dissipation from the top to the bottom of the laminate 65 based on thermal conduction. The inactive gas is, for example, nitrogen. The inactive gas can also be a rare gas such as helium or argon. The inactive gas supply unit 70 may also include valves, mass flow controllers, etc.

[0059] Under the control of the control unit 90, the inactive gas supply unit 70 performs the supply and stop of inactive gas, and the adjustment of the flow rate of inactive gas.

[0060] For example, the inactive gas supply unit 70 supplies inactive gas to the supply flow path 64a when cleaning the processing container 10. In this case, the exposure of the outer peripheral surface 61c and inner peripheral surface 61d of the first plate 61 to the cleaning gas can be reduced by using the inactive gas ejected from the outer peripheral surface 61c and inner peripheral surface 61d of the first plate 61. Therefore, the etching of the outer peripheral surface 61c and inner peripheral surface 61d of the first plate 61 by the cleaning gas can be reduced.

[0061] For example, when the inactive gas supply unit 70 performs film formation on the substrate W within the processing container 10, it supplies inactive gas to the supply flow path 64a. In this case, the exposure of the outer peripheral surface 61c and inner peripheral surface 61d of the first plate 61 to the film-forming gas can be reduced by utilizing the inactive gas ejected from the outer peripheral surface 61c and inner peripheral surface 61d of the first plate 61. Therefore, the accumulation of film-forming gas on the outer peripheral surface 61c and inner peripheral surface 61d of the first plate 61 can be reduced.

[0062] For example, the inactive gas supply unit 70 supplies inactive gas to the supply flow path 64a when purging the processing container 10. In this case, inactive gas can be supplied to the processing container 10 at a large flow rate and low velocity, thereby reducing particle entrapment.

[0063] For example, the inactive gas supply unit 70 supplies inactive gas to the supply flow path 64a when restoring the processing container 10 to normal pressure. In this case, inactive gas can be supplied to the processing container 10 at a large flow rate and low flow velocity, thereby reducing particle entrapment.

[0064] [Example of a modified wafer boat support structure]

[0065] Reference Figures 6 to 8 The modified wafer boat support structure 2A will be described. Figure 6 This is a vertical sectional view of the wafer boat support structure 2A, which represents a modified example. Figure 7 It means Figure 6 Vertical sectional view of the thermal insulation structure 160. Figure 8 It means Figure 6 A horizontal sectional view of the thermal insulation structure at 160°. Figure 8 Equivalent to Figure 7 A cross-sectional view along line VIII-VIII. Figure 7 and Figure 8 In the diagram, arrows F5 and F6 indicate the flow of inactive gases.

[0066] The wafer boat support structure 2A includes a cover 21, a sealing member 22, a magnetic fluid seal 23, a rotating shaft 24, a lifting mechanism 25, a rotating plate 26, a wafer boat support 127, a heat insulation structure 160, and an inactive gas supply section 170. The cover 21, sealing member 22, magnetic fluid seal 23, rotating shaft 24, lifting mechanism 25, and rotating plate 26 are as described above.

[0067] The wafer boat support 127 is cylindrical. The wafer boat support 127 is disposed between the rotating plate 26 and the wafer boat 16. The wafer boat support 127 supports the wafer boat 16 from below on the rotating plate 26. The lower end of the wafer boat support 127 can also be connected to the upper surface of the rotating plate 26. The upper end of the wafer boat support 127 can also be connected to a top plate that supports the lower surface of the wafer boat 16. Multiple wafer boat support 127s can also be provided circumferentially along the outer periphery of the rotating plate 26.

[0068] The thermal insulation structure 160 has a first plate 161, a second plate 162, a third plate 163, and a support column 164.

[0069] The first plate 161 is in the shape of a circular plate. The first plate 161 is formed of quartz. The first plate 161 includes a supply port 161a.

[0070] The supply port 161a is located at the center of the first plate 161 when viewed from above. The supply port 161a is connected to the supply flow path 164a, which will be described later. Inactive gas is supplied from the inactive gas supply unit 170 to the supply port 161a via the supply flow path 164a.

[0071] The first plate 161 has a connecting hole that extends from the supply port 161a to the outer peripheral surface 161c of the first plate 161. Thus, inactive gas supplied to the supply port 161a is ejected through the connecting hole from the outer peripheral surface 161c of the first plate 161 into the processing container 10. The connecting hole is formed, for example, by connecting multiple pores contained in quartz. The first plate 161 is, for example, formed of the same material as the first plate 61.

[0072] The second plate 162 and the third plate 163 can also have the same structure as the second plate 62 and the third plate 63, respectively.

[0073] The first plate 161, the second plate 162, and the third plate 163 are arranged such that the first plate 161 is sandwiched between the second plate 162 and the third plate 163 in the thickness direction. Thus, a laminate 165 is formed.

[0074] The support column 164 is cylindrical. It extends from below the cover 21, passing through the cover 21 and connecting to the lower surface of the laminate 165. The support column 164 supports the laminate 165 from below. Viewed from above, the support column 164 is located at the center of the laminate 165. The support column 164 has an internal supply flow path 164a. The supply flow path 164a communicates with a supply port 161a. The supply flow path 164a supplies inert gas supplied from the inert gas supply section 170 to the supply port 161a.

[0075] The inactive gas supply unit 170 supplies inactive gas to the supply flow path 164a. As shown by arrow F5, the inactive gas from the inactive gas supply unit 170 flows upward through the supply flow path 164a and is supplied to the supply port 161a. As shown by arrow F6, the inactive gas supplied to the supply port 161a is ejected from the outer peripheral surface 161c of the first plate 161 into the processing container 10 through a connecting hole within the first plate 161. The inactive gas flows within the connecting hole in the first plate 161, thereby reducing heat dissipation from the top to the bottom of the laminate 165 based on thermal conduction. The inactive gas is, for example, nitrogen. The inactive gas can also be a rare gas such as helium or argon. The inactive gas supply unit 170 may also include a valve, a mass flow controller, etc.

[0076] Under the control of the control unit 90, the inactive gas supply unit 170 performs the supply and stop of inactive gas, and the adjustment of the flow rate of inactive gas.

[0077] For example, the inactive gas supply unit 170 supplies inactive gas to the supply flow path 164a when cleaning the processing container 10. In this case, by using the inactive gas ejected from the outer peripheral surface 161c of the first plate 161, the exposure of the outer peripheral surface 161c of the first plate 161 to the cleaning gas is reduced. Therefore, it is possible to reduce the etching of the outer peripheral surface 161c of the first plate 161 by the cleaning gas.

[0078] For example, when the inactive gas supply unit 170 performs film formation on the substrate W within the processing container 10, it supplies inactive gas to the supply flow path 164a. In this case, by utilizing the inactive gas ejected from the outer peripheral surface 161c of the first plate 161, the exposure of the outer peripheral surface 161c of the first plate 161 to the film-forming gas is reduced. Therefore, the accumulation of film-forming gas on the outer peripheral surface 161c of the first plate 161 can be reduced.

[0079] For example, the inactive gas supply unit 170 supplies inactive gas to the supply flow path 164a when purging the processing container 10. In this case, inactive gas can be supplied to the processing container 10 at a large flow rate and low velocity, thereby reducing particle entrapment.

[0080] For example, the inactive gas supply unit 170 supplies inactive gas to the supply flow path 164a when restoring the processing container 10 to normal pressure. In this case, inactive gas can be supplied to the processing container 10 at a large flow rate and low velocity, thereby reducing particle entrapment.

[0081] The embodiments disclosed herein should be considered illustrative rather than restrictive in all respects. The above embodiments may also be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

Claims

1. A heat treatment apparatus, wherein, The heat treatment apparatus includes: A processing container that has an opening at the bottom; A cover for opening and closing the opening of the processing container; A heater is disposed around the processing container; as well as An insulating structure is disposed on the cover. The thermal insulation structure has a first plate, and a second plate and a third plate arranged such that the first plate is sandwiched in the thickness direction. The first plate, the second plate, and the third plate are flat plates formed of quartz. The first plate includes a supply port for supplying inactive gas and a connecting hole from the supply port to the outer peripheral surface.

2. The heat treatment apparatus according to claim 1, wherein, The supply port is located away from the center of the first plate when viewed from above.

3. The heat treatment apparatus according to claim 2, wherein, The first plate includes an annular flow path that communicates with the supply port and allows the inactive gas to flow through.

4. The heat treatment apparatus according to claim 1, wherein, The supply port is located at the center of the first plate when viewed from above.

5. The heat treatment apparatus according to claim 1, wherein, The first plate is formed of highly porosity quartz. The second and third plates are formed of transparent quartz.

6. The heat treatment apparatus according to claim 1, wherein, The porosity of the first plate is 20% or more.

7. The heat treatment apparatus according to any one of claims 1 to 6, wherein, The heat treatment apparatus includes an inactive gas supply unit that supplies the inactive gas to the supply port.

8. The heat treatment apparatus according to claim 7, wherein, The inactive gas supply unit supplies the inactive gas to the supply port when cleaning the processing container.

9. The heat treatment apparatus according to claim 7, wherein, The inactive gas supply unit supplies the inactive gas to the supply port when the substrate is being film-formed in the processing container.

10. The heat treatment apparatus according to claim 7, wherein, The inactive gas supply unit supplies the inactive gas to the supply port when purging the processing container.

11. The heat treatment apparatus according to claim 7, wherein, The inactive gas supply unit supplies the inactive gas to the supply port when the pressure inside the processing container is restored to normal.

12. A heat treatment method, wherein the heat treatment method is carried out in a heat treatment apparatus, the heat treatment apparatus comprising: A processing container that has an opening at the bottom; A cover for opening and closing the opening of the processing container; A heater, which is disposed around the processing container; and An insulating structure is disposed on the cover, wherein... The thermal insulation structure has a first plate, and a second plate and a third plate arranged such that the first plate is sandwiched in the thickness direction. The first plate, the second plate, and the third plate are flat plates formed of quartz. The first plate includes a supply port for supplying inactive gas and a connecting hole from the supply port to the outer peripheral surface. The heat treatment method includes a step of supplying the inactive gas to the supply port.

13. The heat treatment method according to claim 12, wherein, The heat treatment method includes a step of supplying the inactive gas to the supply port while cleaning the inside of the treatment container.

14. The heat treatment method according to claim 12, wherein, The heat treatment method includes a step of supplying the inactive gas to the supply port when forming a film on the substrate inside the processing container.

15. The heat treatment method according to any one of claims 12 to 14, wherein, The heat treatment method includes a step of supplying the inactive gas to the supply port while purging the treatment container.

16. The heat treatment method according to any one of claims 12 to 14, wherein, The heat treatment method includes a step of supplying the inactive gas to the supply port while restoring the pressure inside the treatment vessel to normal.

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