A method for manufacturing an organic light emitting display device

Abstract

A method for manufacturing an organic light emitting display device can form an anode electrode on each of a plurality of sub-pixels, form a plurality of banks between the plurality of sub-pixels, and form a plurality of protrusions on the plurality of banks. Further, a method for manufacturing an organic light emitting display device can form a first connection structure on a first side portion of a first protrusion adjacent to a red sub-pixel, and form a first organic light emitting element on the red sub-pixel using a first photolithography process. Further, a method for manufacturing an organic light emitting display device can form a second connection structure on a second side portion of the first protrusion adjacent to a green sub-pixel and a first side portion of a second protrusion, and form a second organic light emitting element on the green sub-pixel using a second photolithography process. In addition, a method for manufacturing an organic light emitting display device can form a third connection structure on a second side portion of the second protrusion adjacent to a blue sub-pixel, and form a third organic light emitting element on the blue sub-pixel using a third photolithography process.

Description

Technical Field

[0001] The embodiments relate to a method for manufacturing an organic light-emitting display device. Background Technology

[0002] With the increasing demand for portable information media, attempts to apply organic light-emitting diode (OLED) displays to various lightweight and thin information electronic devices are expanding. Recently, OLED displays are being used in product groups such as mobile PCs and automobiles, rather than TVs or mobile phones. Since OLED displays used in mobile PCs or automobiles are driven as static images for extended periods, a long lifespan is required. To achieve this long lifespan, light extraction from the OLEDs must be maximized. Furthermore, to reduce costs, the technology needs to be expanded to enable the fabrication of OLEDs on substrates 110, not only at the 8.5 generation (2200 x 2500 mm) but also at the 10.5 generation (3370 x 2940 mm). To fabricate long-life OLEDs, each sub-pixel, having both a top-emitting structure and a side-by-side structure, must be implemented as a structure with two or more stacked OLEDs.

[0003] The structure of this organic light-emitting element can be obtained using a deposition apparatus employing a fine metal mask (FMM). However, the deposition method using an FMM suffers from low productivity because the production flow must be produced only using a cluster method rather than an in-line method. Furthermore, there is a problem with low pixel position accuracy (PPA) between the FMM and the substrate. Consequently, the emitter area ratio (EAR) is small, which limits product lifespan. Here, the emitter area ratio is a value obtained by dividing the emitter area of ​​a subpixel by the area of ​​the subpixel.

[0004] Therefore, it is urgent to develop new deposition methods to solve the above problems and organic light-emitting display devices with new structures of organic light-emitting elements using new deposition methods. Summary of the Invention

[0005] Technical issues The purpose of these embodiments is to address the above and other problems.

[0006] Another objective of this embodiment is to provide an organic light-emitting display device with a novel structure.

[0007] Another objective of the embodiments is to provide an organic light-emitting display device that can improve lifespan.

[0008] Another objective of this embodiment is to provide an organic light-emitting display device that can improve productivity and output.

[0009] Another objective of the embodiments is to provide an organic light-emitting display device capable of improving image quality.

[0010] The technical problems addressed in the embodiments are not limited to those described in this project, but include those that can be understood from the description of the invention.

[0011] Technical solution To achieve the above or other objectives, according to one aspect of the embodiments, a method for manufacturing an organic light-emitting display device includes: forming an anode electrode in each of a red sub-pixel, a green sub-pixel, and a blue sub-pixel on a substrate; forming a first bank between the red sub-pixel and the green sub-pixel, and forming a second bank between the green sub-pixel and the blue sub-pixel; forming a first protrusion and a second protrusion on the first bank and the second bank, respectively; forming a first connection structure on a first side of the first protrusion adjacent to the red sub-pixel, and forming a first organic light-emitting element on the red sub-pixel using a first photolithography process; forming a second connection structure on a second side of the first protrusion adjacent to the green sub-pixel and a second organic light-emitting element on the green sub-pixel using a second photolithography process; and forming a third connection structure on a second side of the second protrusion adjacent to the blue sub-pixel, and forming a third organic light-emitting element in the blue sub-pixel using a third photolithography process, wherein the first organic light-emitting element to the third organic light-emitting element all include the anode electrode and include a hole injection layer. The organic light-emitting layer (layer) and the cathode electrode, wherein the first to the third connection structures each include an auxiliary electrode electrically connected to the cathode electrode in contact with the end of the hole injection layer, and wherein the formation of the first and second dams includes forming an opening structure configured to isolate the hole injection layer in the first and second dams, respectively.

[0012] The formation of the opening structure may include forming a barrier layer that is recessed inward from the first and second sides of the first dike and the first and second sides of the second dike, respectively.

[0013] The formation of the first organic light-emitting element may include depositing and patterning a first organic light-emitting layer including a first hole injection layer and a first cathode electrode on a substrate to form the first organic light-emitting layer and the first cathode electrode on the red sub-pixel and the first barrier. The first cathode electrode may contact the auxiliary electrode of the first connection structure and the end of the first hole injection layer.

[0014] The first organic light-emitting layer can be isolated corresponding to the first opening structure formed on the first side of the first partition.

[0015] The formation of the second organic light-emitting element may include depositing and patterning a second organic light-emitting layer including a second hole injection layer and a second cathode electrode on a substrate to form the second organic light-emitting layer and the second cathode electrode on the green sub-pixel, the first dam, and the second dam. The second cathode electrode may contact the end of the second hole injection layer and the auxiliary electrode of the second connection structure.

[0016] The second organic light-emitting layer can be isolated corresponding to the second opening structure formed on the second side of the first partition and the first side of the second partition.

[0017] The formation of the third organic light-emitting element may include depositing and patterning a third organic light-emitting layer, including a third hole injection layer, and a third cathode electrode on a substrate to form the third organic light-emitting layer and the third cathode electrode on the blue sub-pixel and the second barrier. The third cathode electrode may contact the end of the third hole injection layer and the auxiliary electrode of the third connection structure.

[0018] The third organic light-emitting layer can be isolated corresponding to the third opening structure formed on the second side of the second dike.

[0019] The step of forming a cathode electrode may include forming a first conductive layer configured to be electrically connected to an auxiliary electrode, the first conductive layer may include a Mg:Ag alloy.

[0020] The step of forming a cathode electrode may include forming a first conductive layer and a second conductive layer on a first conductive layer to be electrically connected to an auxiliary electrode. The first conductive layer may include a Mg:Ag alloy, and the second conductive layer may include a transparent conductive oxide material.

[0021] The method may further include forming a first color filter layer to a third color filter layer on the first organic light-emitting element to the third organic light-emitting element.

[0022] The method may further include forming an encapsulation layer on the first organic light-emitting element, the second organic light-emitting element, and the third organic light-emitting element.

[0023] Beneficial effects The effects of the organic light-emitting display device according to the embodiment are described below.

[0024] According to at least one embodiment, the advantage is that the process is simplified and the process cost is reduced because FMM is not required.

[0025] According to at least one embodiment, the advantage is that because FMM is not required, the EAR within the subpixel is increased, thereby improving the lifetime.

[0026] According to at least one embodiment, there is an advantage that productivity, yield and material utilization efficiency can be improved by depositing organic light-emitting elements on a large-area substrate in an online deposition system.

[0027] Other applications of the embodiments will become apparent from the following detailed description. However, since various changes and modifications within the ideas and scope of the embodiments will be readily understood by those skilled in the art, the detailed description and specific embodiments (e.g., preferred embodiments) should be understood as being given by way of example only. Attached Figure Description

[0028] Figure 1 This is a schematic plan view of an organic light-emitting display device according to a first embodiment.

[0029] Figure 2 It is shown Figure 1 A planar image of a single pixel.

[0030] Figure 3 This is a circuit diagram illustrating an organic light-emitting display device according to an embodiment.

[0031] Figure 4A It is along Figure 2 A cross-sectional view of the line A-A' cut from the pixels.

[0032] Figure 4B It is along Figure 2 A cross-sectional view of the line B-B' cut from the pixels.

[0033] Figures 5A to 5O The manufacturing process of the organic light-emitting display device according to the first embodiment is shown.

[0034] Figure 6 yes Figure 5O Enlarged cross-sectional view of the asymmetric open connection structure in the diagram.

[0035] Figure 7 It is shown Figure 6 Cross-sectional view of the opening structure in the diagram.

[0036] Figures 8A to 8E A process for forming an opening structure according to one embodiment is shown.

[0037] Figures 9A to 9P A dual-mask process for forming an asymmetric opening connection structure according to an embodiment is shown.

[0038] Figures 10A to 10H A single-mask process for forming an asymmetric opening connection structure according to an embodiment is shown.

[0039] Figures 11A to 11C It shows Figures 10E to 10GAnother modified process of the process.

[0040] Figures 12A to 12D The process for generating a residual film in the process of forming red subpixels is shown.

[0041] Figure 13A The residual film produced during the process of forming the red subpixel is shown.

[0042] Figure 13B A process that does not produce a residual film is shown.

[0043] Figures 14A to 14D The process of forming a red subpixel so that no residual film is generated on the second side of the first protrusion adjacent to the green subpixel is shown.

[0044] Figures 15A to 15K The detailed process for forming the red subpixel using the first JIT process technology is shown.

[0045] Figures 16A to 16J The detailed process for forming green subpixels using the first JIT process technology is shown.

[0046] Figures 17A to 17K The detailed process for forming the blue subpixel using the first JIT process technology is shown.

[0047] Figure 18 The substrate structure before the second JIT process technology is shown.

[0048] Figure 19 The first process is shown, which uses a second JIT process technology to form the interconnect structure before forming the green organic light-emitting element.

[0049] Figure 20 A second process is shown, which uses a second JIT process technology to form the connection structure before forming the green organic light-emitting element.

[0050] Figures 21A to 21K The detailed process for forming the red subpixel using the second JIT process technology is shown.

[0051] Figures 22A to 22M The detailed process for forming green and blue subpixels using the second JIT process technology is shown.

[0052] Figure 23 The substrate structure before the third JIT process technology is shown.

[0053] Figure 24 This illustrates a process for forming the interconnect structure using a third JIT process technology prior to the formation of the green organic light-emitting element.

[0054] Figure 25An organic light-emitting display device manufactured using the third JIT process technology is shown.

[0055] The dimensions, shapes, and scales of the elements shown in the accompanying drawings may differ from their actual dimensions, shapes, and scales. Furthermore, even if the same element is shown with different dimensions, shapes, and scales in different drawings, this is merely an example in the drawings, and the same element has the same dimensions, shapes, and scales across different drawings. Detailed Implementation

[0056] The embodiments disclosed in this specification will now be described in detail with reference to the accompanying drawings. However, regardless of the reference numerals, identical or similar elements will be given the same reference numerals, and redundant descriptions thereof will be omitted. For ease of writing, the suffixes “module” and “unit” are given or used interchangeably with the elements used in the following description, and they do not inherently have different meanings or functions from each other. Furthermore, the drawings are provided for ease of understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited by the drawings. Additionally, when an element such as a layer, region, or substrate is referred to as being “on” another element, this means that it may be directly on the other element or that other intermediate elements may exist therein.

[0057] The following describes an organic light-emitting display device with a side-by-side structure fabricated using photolithography. This structure is referred to as Ph-SbS (side-by-side structure formed by photolithography). By using photolithography, the process is simplified, and the process cost is reduced because no FMM is required. Furthermore, the EAR within the sub-pixels can be increased, thereby improving lifetime. In addition, since organic light-emitting elements are deposited on a large-area substrate in an in-line deposition system, productivity, yield, and material utilization efficiency can be improved.

[0058] In the following text, the red subpixel SPr may be referred to as the first subpixel, the green subpixel SPg as the second subpixel, and the blue subpixel SPb as the third subpixel. Furthermore, the red organic light-emitting element 120r may be referred to as the first organic light-emitting element, the green organic light-emitting element 120g as the second organic light-emitting element, and the blue organic light-emitting element 120b as the third organic light-emitting element.

[0059] In the following description, the organic light-emitting display device 100 is a top-emitting type (where light is emitted in the upward direction along the substrate 110 to display an image), but a bottom-emitting type (where light is emitted in the downward direction along the substrate 110 to display an image) may also be included in the technical concept of the present invention.

[0060] In the following text, the reference numerals for the auxiliary electrodes may be as follows: Figure 3 AC is given unless otherwise indicated by separate figure labels.

[0061] Figure 1 This is a schematic plan view of an organic light-emitting display device according to a first embodiment. Figure 2 It is shown Figure 1 A planar image of a single pixel.

[0062] Reference Figure 1 and Figure 2 The organic light-emitting display device 100 according to the first embodiment may include a plurality of pixels P arranged in a matrix. The plurality of pixels P may be located in a display area AA. The remaining area outside the display area AA may be a non-display area NAA.

[0063] Each pixel P may include, for example, a red subpixel SPr, a green subpixel SPg, and a blue subpixel SPb. For instance, a red organic light-emitting element 120r may be disposed in the red subpixel SPr, a green organic light-emitting element 120g may be disposed in the green subpixel SPg, and a blue organic light-emitting element 120b may be disposed in the blue subpixel SPb. This figure illustrates that a pixel P includes three subpixels SPr, SPg, and SPb, but it may include more subpixels.

[0064] The figure shows that the area of ​​the blue sub-pixel SPb is larger than the area of ​​the red sub-pixel SPr or the area of ​​the green sub-pixel SPg, but other variations are also possible.

[0065] Each of the sub-pixels SPr, SPg, and SPb may include an emitting region EA and a non-emitting region NEA. The emitting region EA is the area where the organic light-emitting elements 120r, 120g, and 120b of each sub-pixel SPr, SPg, and SPb are set, and the non-emitting region NEA may be the remaining area of ​​each sub-pixel SPr, SPg, and SPb other than the emitting region EA.

[0066] Simultaneously, a first power line PL1 and a second power line PL2 can be provided to supply power to each sub-pixel SPr, SPg, and SPb. A first power terminal 101 can be electrically connected to one end of the first power line PL1, and a second power terminal 102 can be electrically connected to one end of the second power line PL2. The first power terminal 101 and the second power terminal 102 can be electrically connected to a power supply unit (not shown) to receive a first potential voltage and a second potential voltage. The second potential voltage is greater than the first potential voltage, and the first potential voltage can be grounded.

[0067] A first power line PL1 and a second power line PL2 are disposed along a first direction X between the non-light-emitting areas NEA. The first power line PL1 and the second power line PL2 are electrically connected to each of the sub-pixels SPr, SPg and SPb.

[0068] Contact pad 103 can be located in the non-emitting area (NEA). The first power line PL1 can be electrically connected to contact pad 103.

[0069] auxiliary electrode ( Figure 3 The auxiliary electrode AC can be located in the non-emitting region NEA. The auxiliary electrode AC can be located in the non-emitting region NEA along the second direction Y, but is not limited thereto.

[0070] The auxiliary electrode AC can be located in the non-emitting region NEA adjacent to each of the sub-pixels SPr, SPg, and SPb. The auxiliary electrode AC can be electrically connected to the first power line PL1 via contact pad 103.

[0071] The first power line PL1, contact pad 103, and auxiliary electrode AC can be located in different layers.

[0072] The auxiliary electrode AC can be electrically connected to the cathode electrodes of adjacent organic light-emitting elements 120r, 120g, and 120b of adjacent sub-pixels SPr, SPg, and SPb. For example, when the auxiliary electrode AC is located between the red sub-pixel SPr and the green sub-pixel SPg, the auxiliary electrode AC can be electrically connected to the cathode electrodes of the red organic light-emitting element 120r and the green organic light-emitting element 120g.

[0073] Therefore, the auxiliary electrode AC can provide a first potential voltage from the first power line PL1 to the cathode electrodes of each organic light-emitting element 120r, 120g and 120b.

[0074] Meanwhile, the second power line PL2 can be electrically connected to the driving circuit 106 of each sub-pixel SPr, SPg, and SPb, such as a driving transistor, but is not limited thereto. Therefore, when a specific sub-pixel is selected in response to a scan signal provided through a specific gate line, light with a brightness corresponding to the current flowing in the driving transistor of the specific sub-pixel can be emitted through the first potential voltage of the first power line PL1 and the second potential voltage of the second power line PL2.

[0075] Multiple organic light-emitting elements 120r, 120g, and 120b can be arranged in a strip along the second direction Y. That is, multiple organic light-emitting elements 120r, 120g, and 120b can be arranged continuously along the second direction Y without being separated. For example, red organic light-emitting element 120r can be arranged continuously along the second direction Y, green organic light-emitting element 120g can be arranged continuously along the second direction Y, and blue organic light-emitting element 120b can be arranged continuously along the second direction Y.

[0076] As another example, multiple organic light-emitting elements 120r, 120g, and 120b can be divided into pixel P units or row-line units along the second direction Y. That is, the red organic light-emitting element 120r can be divided into pixel P units or row-line units along the second direction Y, the green organic light-emitting element 120g can be divided into pixel P units or row-line units along the second direction Y, and the blue organic light-emitting element 120b can be divided into pixel P units or row-line units along the second direction Y.

[0077] Red subpixels SPr, green subpixels SPg, and blue subpixels SPb can be arranged alternately along the first direction X in column-line units. That is, red subpixels SPr, green subpixels SPg, and blue subpixels SPb of different colors can be positioned sequentially along the first direction X to realize an organic light-emitting display device with a side-by-side structure.

[0078] Simultaneously, the asymmetric open connection (AOC) structure 105 can be located in the non-emitting area (NEA). In one embodiment, the asymmetric open connection structure 105 may include a connection structure 105A and an opening structure 105B. Because the ratio of the depth to the gap of the undercut structure of the connection structure 105A and the opening structure 105B is different, it can be referred to as the asymmetric open connection structure 105. The depth can represent the width of the undercut structure in the horizontal direction, and the gap can represent the width of the undercut structure in the vertical direction.

[0079] As described later, the asymmetric open-circuit connection structure 105 can prevent lateral leakage current between multiple sub-pixels SPr, SPg, and SPb. Lateral leakage current can represent the leakage current flowing along the first direction X between adjacent sub-pixels SPr, SPg, and SPb. Furthermore, the asymmetric open-circuit connection structure 105 can prevent electrical short circuits between the anode and cathode electrodes in the respective sub-pixels SPr, SPg, and SPb. Therefore, by using the asymmetric open-circuit connection structure 105, color spots caused by leakage current can be enhanced, and luminous efficiency and brightness can be significantly improved.

[0080] Connection structure 105A can be a structure that electrically connects the auxiliary electrode AC to the cathode electrode of each of the organic light-emitting elements 120r, 120g, and 120b. Opening structure 105B can be a structure that separates the layers of low-resistance organic light-emitting material (e.g., hole injection layer, charge generation layer, etc.) comprising each of the organic light-emitting elements 120r, 120g, and 120b, thereby preventing electrical short circuits between the anode and cathode electrodes and reducing leakage current between sub-pixels. The asymmetric opening connection structure 105 can also be referred to as a "paradoxical open-connection" structure.

[0081] Figure 3 This is a circuit diagram illustrating an organic light-emitting display device according to an embodiment. Figure 3 yes Figure 2 The circuit diagram shows the electrical connections from the first power terminal 101 and the second power terminal 102 to the green sub-pixel SPg. Figure 2 The circuit diagram shown can be applied in the same way to the circuit diagram of the electrical connection from the first power terminal 101 and the second power terminal 102 to the red sub-pixel SPr or the blue sub-pixel SPb.

[0082] like Figure 3 As shown, the first power terminal 101 and the second power terminal 102 can be disposed in the non-display area NAA, and the first power line PL1 and the second power line PL2 can be disposed in the non-display area NAA and the display area AA.

[0083] The contact pad 103 can be located in the non-emitting area (NEA) and can be electrically connected to the first power line PL1. The first power line PL1 can be electrically connected to the auxiliary electrode AC through the contact pad 103.

[0084] The organic light-emitting element 120g can be disposed in the emission region EA of the sub-pixel SPg, and the connection structure 105A and the opening structure 105B can be disposed in the non-emission region NEA. Figure 2 The asymmetric open connection structure 105 shown can be configured with a connection structure 105A and an opening structure 105B. The auxiliary electrode AC can be electrically connected to the cathode electrode 123g of the organic light-emitting element 120g through the connection structure 105A. The hole injection layer of the organic light-emitting element 120g can be electrically isolated through the opening structure 105B between the anode electrode 121g and the cathode electrode 123g.

[0085] like Figure 3 As shown, various resistors can be formed between each component. Each resistor can be defined as follows.

[0086] R1: Contact resistance between contact pad 103 and auxiliary electrode AC R2: Resistance between the auxiliary electrode AC and the cathode electrode R4: The resistance generated between the anode electrode 121g and the cathode electrode 123g due to the hole injection layer and other components installed in the horizontal direction. R5: The resistance generated between the anode electrode 121g and the cathode electrode 123g due to the multiple organic light-emitting layers arranged in the vertical direction. R6: Resistor between the first power line PL1 and contact pad 103 R7: Resistance between the first power line PL1 and the auxiliary electrode AC In the aforementioned resistors, since the hole injection layer, which forms the fourth resistor R4, is made of a low-resistance organic light-emitting material, leakage current can easily flow through the hole injection layer. When leakage current flows through the hole injection layer, a short circuit between the anode electrode 121g and the cathode electrode 123g may cause light not to be emitted from the corresponding sub-pixels SPr, SPg, and SPb, or the brightness of the light may be significantly lower than the expected brightness.

[0087] In this embodiment, the hole injection layer corresponding to the opening structure 105B can be isolated by the opening structure 105B, thereby blocking leakage current from flowing through the hole injection layer, etc.

[0088] In this embodiment, the cathode electrode 123g can be easily connected to the auxiliary electrode AC via the connection structure 105A, and the deposition area of ​​the organic light-emitting element 120g can be maximized, thereby improving the luminous efficiency.

[0089] Figure 4A It is along Figure 2 A cross-sectional view of the line A-A' cut from the pixels. Figure 4B It is along Figure 2 A cross-sectional view of the line B-B' cut from the pixels. Figure 4C It is along Figure 2 A cross-sectional view of the line C-C' cut from the pixels.

[0090] Reference Figure 1 , Figure 2 and Figures 4A to 4C The organic light-emitting display device according to the embodiment may include a plurality of partitions 111-1 and 111-2, a plurality of protrusions 130-1 and 130-2, a plurality of organic light-emitting elements 120r, 120g and 120b, etc.

[0091] Multiple partitions 111-1 and 111-2, multiple protrusions 130-1 and 130-2, and multiple organic light-emitting elements 120r, 120g, and 120b can be disposed on the substrate 110. The multiple partitions 111-1 and 111-2, multiple protrusions 130-1 and 130-2, and / or multiple organic light-emitting elements 120r, 120g, and 120b can each be disposed on the substrate 110 in a strip shape along the second direction Y. In this case, sub-pixels of the same color can be disposed along the second direction Y; for example, multiple red sub-pixels SPr can be disposed in a strip shape along the second direction Y. Partitions 111-1 and 111-2 can comprise inorganic or organic materials. For example, partitions 111-1 and 111-2 can comprise inorganic materials such as SiNx, SiON, etc.

[0092] At the same time, such as Figure 4CAs shown, the transverse dike 111-3 can be arranged in rows of units along the second direction Y. Alternatively, the protrusion may not be arranged in rows of units along the second direction Y. That is, the protrusion along the second direction Y may not be provided on the transverse dike 111-3.

[0093] The first dike 111-1 and the second dike 111-2 may be referred to as longitudinal dikes to distinguish them from the transverse dike 111-3.

[0094] Multiple sub-pixels SPr, SPg, and SPb can be separated from each other by multiple partitions 111-1 and 111-2. A first partition 111-1 can be positioned between the red sub-pixel SPr and the green sub-pixel SPg, and a second partition 111-2 can be positioned between the green sub-pixel SPg and the blue sub-pixel SPb. Although not shown, a third partition can be positioned between the blue sub-pixel SPb and another red sub-pixel SPr.

[0095] Multiple organic light-emitting elements 120r, 120g, and 120b can be spatially separated and electrically isolated from each other by multiple partitions 111-1 and 111-2. Therefore, lateral leakage current between multiple sub-pixels SPr, SPg, and SPb can be blocked, thereby enhancing the color point and improving luminous efficiency and brightness.

[0096] The red organic light-emitting element 120r can be set in the red sub-pixel SPr, the green organic light-emitting element 120g can be set in the green sub-pixel SPg, and the blue organic light-emitting element 120b can be set in the blue sub-pixel SPb.

[0097] Multiple partitions 111-1 and 111-2 can have a grid shape. For example, partitions 111-1 and 111-2 can be arranged along the periphery of sub-pixels SPr, SPg, and SPb. That is, multiple partitions 111-1 and 111-2 can be arranged between adjacent sub-pixels SPr, SPg, and SPb along a first direction X, and between adjacent sub-pixels SPr, SPg, and SPb along a second direction Y. In this case, adjacent sub-pixels SPr, SPg, and SPb along the first direction X can have different colors, while adjacent sub-pixels SPr, SPg, and SPb along the second direction Y can have the same color.

[0098] Multiple organic light-emitting elements 120r, 120g, and 120b can be separated from each other by multiple partitions 111-1 and 111-2. The partitions 111-1 and 111-2 can be configured to separately separate the multiple organic light-emitting elements 120r, 120g, and 120b. The red organic light-emitting element 120r and the green organic light-emitting element 120g can be separated by the first partition 111-1, and the green organic light-emitting element 120g and the blue organic light-emitting element 120b can be separated by the second partition 111-2.

[0099] Meanwhile, the organic light-emitting display device according to this embodiment may include an opening structure 105B in the edge region of each of the plurality of partitions 111-1 and 111-2. For example, the opening structure 105B may be provided in the lower edge region of each of the plurality of partitions 111-1 and 111-2, but is not limited thereto.

[0100] The opening structure 105B can be disposed along the first direction X in the edge regions of the partitions 111-1 and 111-2 between the sub-pixels SPr, SPg and SPb. The opening structure 105B can also be disposed along the second direction Y in the edge regions of the partitions 111-1 and 111-2 between the sub-pixels SPr, SPg and SPb.

[0101] When organic light-emitting elements 120r, 120g, and 120b are deposited on spacers 111-1 and 111-2, some layers of organic light-emitting elements 120r, 120g, and 120b can be isolated by opening structure 105B. For example, opening structure 105B can isolate the low-resistance layer of each organic light-emitting element 120r, 120g, and 120b. The low-resistance layer may include, for example, a hole injection layer, a charge generation layer, etc. A low-resistance layer can refer to a layer having a resistance value lower than that of a high-resistance layer, such as an organic light-emitting layer, an electron transport layer, an electron injection layer, etc.

[0102] For example, the organic light-emitting layers 122r, 122g, and 122b of the organic light-emitting elements 120r, 120g, and 120b may have separation structures 125-1 to 125-3 corresponding to the opening structure 105B. Separation structures 125-1 to 125-3 may represent shapes in which some layers of the organic light-emitting layers 122r, 122g, and 122b are isolated. Therefore, in separation structures 125-1 to 125-3, for example, hole injection layers, charge generation layers, etc., may be isolated.

[0103] The opening structure 105B may include at least one or more barrier layers 113 recessed inward from the side portions of the partitions 111-1 and 111-2, forming undercut structures in the edge regions of the partitions 111-1 and 111-2 through the barrier layers 113. The barrier layers 113 may include silicon-based inorganic materials, metals, etc. As metals, aluminum (Al), molybdenum (Mo), molybdenum alloys, etc., may be used, but are not limited thereto.

[0104] When organic light-emitting elements 120r, 120g, and 120b are deposited on the partitions 111-1 and 111-2 that form undercut structures in this way, some layers in the organic light-emitting layers 122r, 122g, and 122b of the organic light-emitting elements 120r, 120g, and 120b that correspond to the undercut structures, namely hole injection layers, charge generation layers, etc., can be isolated.

[0105] Meanwhile, as described above, organic light-emitting elements 120r, 120g, and 120b corresponding to sub-pixels SPr, SPg, and SPb can be respectively provided.

[0106] The red organic light-emitting element 120r may include an anode electrode 121r, a red organic light-emitting layer 122r, and a cathode electrode 123r. The red organic light-emitting layer 122r may be disposed on the anode electrode 121r, and the cathode electrode 123r may be disposed on the red organic light-emitting layer 122r. The green organic light-emitting element 120g may include an anode electrode 121g, a green organic light-emitting layer 122g, and a cathode electrode 123g. The green organic light-emitting layer 122g may be disposed on the anode electrode 121g, and the cathode electrode 123g may be disposed on the green organic light-emitting layer 122g. The blue organic light-emitting element 120b may include an anode electrode 121b, a blue organic light-emitting layer 122b, and a cathode electrode 123b. The blue organic light-emitting layer 122b may be disposed on the anode electrode 121b, and the cathode electrode 123b may be disposed on the blue organic light-emitting layer 122b.

[0107] Anode electrodes 121r, 121g, and 121b may include multiple conductive layers. Anode electrodes 121r, 121g, and 121b may have a triple structure composed of ITO / Ag alloy / ITO. Anode electrodes 121r, 121g, and 121b may have a triple structure composed of ITO / Ag alloy / (Ti, Mo, or MoTi).

[0108] One end of the anode electrodes 121r, 121g, and 121b can be positioned below the partitions 111-1 and 111-2. That is, one end of the partitions 111-1 and 111-2 can be positioned on one end of the anode electrodes 121r, 121g, and 121b. One end of the anode electrodes 121r, 121g, and 121b can perpendicularly overlap with the partitions 111-1 and 111-2.

[0109] The red organic light-emitting layer 122r, the green organic light-emitting layer 122g, and the blue organic light-emitting layer 122b may include at least a hole injection layer comprising a low-resistance organic light-emitting material.

[0110] Simultaneously, one end of the hole injection layer and / or charge generation layer can contact the cathode electrodes 123r, 123g, and 123b. Additionally, the lower surface of the hole injection layer can contact the anode electrodes 121r, 121g, and 121b. In this case, due to the low resistance of the hole injection layer, leakage current can flow between the anode electrodes 121r, 121g, and 121b and the cathode electrodes 123r, 123g, and 123b, and a short circuit may occur between the anode electrodes 121r, 121g, and 121b and the cathode electrodes 123r, 123g, and 123b.

[0111] However, according to the embodiment, since the hole injection layer and / or charge generation layer are isolated by the opening structure 105B provided in the edge region of the partition 111-1 and 111-2, the anode electrodes 121r, 121g and 121b can be electrically disconnected from the cathode electrodes 123r, 123g and 123b, thereby preventing electrical short circuit.

[0112] Meanwhile, the organic light-emitting display device according to the embodiment may include a plurality of protrusions 130-1 and 130-2.

[0113] Multiple organic light-emitting elements 120r, 120g, and 120b can be spatially separated and electrically isolated from each other through multiple protrusions 130-1 and 130-2. Therefore, lateral leakage current between multiple sub-pixels SPr, SPg, and SPb can be blocked, thereby enhancing the color point and improving luminous efficiency and brightness.

[0114] The plurality of protrusions 130-1 and 130-2 may be disposed on the upper side of the plurality of partitions 111-1 and 111-2. The first protrusion 130-1 may be disposed on the upper side of the first partition 111-1 between the red sub-pixel SPr and the green sub-pixel SPg. The second protrusion 130-2 may be disposed on the upper side of the second partition 111-2 between the green sub-pixel SPg and the blue sub-pixel SPb.

[0115] The left and right sides of protrusions 130-1 and 130-2 may have shapes symmetrical with respect to the central normal of protrusions 130-1 and 130-2, but are not limited thereto. For example, the left and right sides of protrusions 130-1 and 130-2 may each have an undercut structure. In this case, the undercut structure on the left side and the undercut structure on the right side may have shapes symmetrical with respect to the central normal of protrusions 130-1 and 130-2.

[0116] The protrusions 130-1 and 130-2 may have a connection structure 105A, which includes an auxiliary electrode AC electrically connected to the cathode electrodes 123r, 123g and 123b.

[0117] The protrusions 130-1 and 130-2 may include a first layer 131 and a second layer 132 on the first layer 131.

[0118] The side portion of the first layer 131 can be recessed into the interior of the protrusion from the side portion of the second layer 132. Therefore, an undercut structure can be formed on the side portion of the protrusion using the first layer 131 and the second layer 132. The undercut structure can have a recessed shape. For example, the undercut structure can have a U-shaped recessed shape. Therefore, the undercut structure can be referred to as a recess, a U-shaped recess, a recessed portion, etc. To form the undercut structure, the first layer 131 and the second layer 132 can have different etching selectivity. For example, the first layer 131 can include a material with a high etching rate, and the second layer 132 can include a material with a low etching rate. Therefore, when etching the first layer 131 and the second layer 132 after forming a photosensitive pattern on the second layer 132, the side portion of the first layer 131 can be etched faster than the side portion of the second layer 132, thereby forming an undercut structure on the side portions of the protrusions 130-1 and 130-2.

[0119] The first layer 131 and / or the second layer 132 may comprise a metal or conductive oxide material with excellent electrical conductivity. As a metal, titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), aluminum (Al), copper (Cu), and their alloys may be used. As a conductive oxide material, ITO, IZO, etc., may be used.

[0120] Simultaneously, by adjusting the target-source distance of the evaporation source (or evaporation source device), the deposition material can be deposited on the substrate 110 at different deposition angles. The target-source distance can be the distance between the evaporation source and the substrate 110. The deposition angle can be the angle between the virtual line between the evaporation source and the lower edge 132a of the second layer 132 and the normal direction. For example, the larger the target-source distance, the smaller the deposition angle can be. The smaller the deposition angle, the closer the layer formed by the deposition material is to the adjacent sub-pixel deposition. The larger the deposition angle, the closer the corresponding layer can be deposited to the protrusions 130-1 and 130-2.

[0121] like Figure 4A , 4B As shown in 4C, since the deposition materials are deposited at different deposition angles, one end of the organic light-emitting layers 122r, 122g and 122b and one end of the first conductive layer 123-1 of the cathode electrodes 123r, 123g and 123b can be positioned differently from each other.

[0122] Cathode electrodes 123r, 123g, and 123b may include multiple conductive layers 123-1 and 123-2. For example, cathode electrodes 123r, 123g, and 123b may include a first conductive layer 123-1 and a second conductive layer 123-2 on the first conductive layer 123-1, but may also include three or more conductive layers.

[0123] One end of the organic light-emitting layers 122r, 122g, and 122b, and one end of the first conductive layer 123-1, may be located on the upper side of the partitions 111-1 and 111-2. For example, one end of the organic light-emitting layers 122r, 122g, and 122b may be located closer to the first layer 131 than one end of the first conductive layer 123-1.

[0124] The second conductive layer 123-2 can be disposed over the entire area of ​​the substrate 110. The second conductive layer 123-2 can be deposited using a sputtering process. That is, the second conductive layer 123-2 can be disposed on the upper side of the first conductive layer 123-1, the upper side of the partitions 111-1 and 111-2, and the sides and upper sides of the protrusions 130-1 and 130-2 for each of the sub-pixels SPr, SPg, and SPb. The second conductive layer 123-2 can be in contact with the side of the first layer 131 and / or the lower side of the second layer 132.

[0125] For example, the first conductive layer 123-1 may include a metal with excellent conductivity, and the second conductive layer 123-2 may include a conductive oxide material. For example, the first conductive layer 123-1 may include a Mg:Ag alloy, and the second conductive layer 123-2 may include ITO, IZO, etc.

[0126] Mg:Ag can be formed as the first conductive layer 123-1 by deposition using an evaporation source. However, due to the stepped coverage characteristics of Mg:Ag, it is difficult to deposit Mg:Ag alloys deep within the undercut structure of the connection structure 105A. Furthermore, when the uniformity of the film thickness of the first conductive layer 123-1 containing the Mg:Ag alloy is insufficient or the process margin is inadequate, the first conductive layer 123-1 may not be electrically connected to the auxiliary electrode AC included in the connection structure 105A, resulting in poor electrical connection.

[0127] To address this issue, a conductive oxide material such as ITO, possessing excellent step coverage properties, can be deposited on substrate 110 using a sputtering process, allowing it to be deposited deep within the undercut structure of connection structure 105A. Therefore, the second conductive layer 123-2 can be stably deposited on the side of the first layer 131, which is the auxiliary electrode AC, thereby preventing electrical connection failures between the auxiliary electrode AC and the cathode electrodes 123r, 123g, and 123b, which include the first conductive layer 123-1 and the second conductive layer 123-2. Furthermore, by ensuring the uniformity of the film thickness of the first conductive layer, the stability of production quality can be improved.

[0128] When the second conductive layer 123-2 is formed on the first conductive layer 123-1, it is not necessary to adjust or manage the deposition angle to deposit the first conductive layer 123-1 using an evaporation source. Furthermore, even when freely depositing the organic light-emitting layers 122r, 122g, and 122b and the first conductive layer 123-1 using an evaporation source, regardless of the deposition angle, the organic light-emitting layers 122r, 122g, and 122b can be deposited on the corresponding sub-pixels SPr, SPg, and SPb, and the cathode electrodes 123r, 123g, and 123b can be stably connected to the auxiliary electrodes AC of the protrusions 130-1 and 130-2 via the second conductive layer 123-2. Therefore, when constructed using the combination of the above-described connection structure 105A and opening structure 105B, productivity and material utilization efficiency can be improved through a more flexible deposition process.

[0129] Furthermore, when an organic light-emitting display device is implemented in a top-emitting manner, the luminous efficiency can be improved by utilizing the constructive interference between the anode electrodes 121r, 121g, and 121b and the cathode electrodes 123r, 123g, and 123b, and by using the cathode electrodes 123r, 123g, and 123b, which include a first conductive layer 123-1 (which includes an Ag:Mg alloy), and the anode electrodes 121r, 121g, and 121b, which include transmissive and reflective materials.

[0130] Simultaneously, protrusions 130-1 and 130-2 may include a fourth layer 134 on the second layer 132. The fourth layer 134 may be omitted. The fourth layer 134 may include inorganic materials, such as SiO2, SiNx, or SiONx. The fourth layer 134 may include conductive oxide materials, such as ITO. The fourth layer 134 may serve as a stopper for the second layer 132. As described above, to form a side-by-side structure, the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb can be etched twice, respectively. At this time, when these two etchings are performed, the area or thickness of the second layer 132 can change. In this case, the deposition angle determined by the lower edge 132a of the second layer 132 becomes different, and the deposition area of ​​each sub-pixel SPr, SPg, and SPb becomes different, leading to a decrease in image quality.

[0131] To address the aforementioned issues, when a fourth layer 134, acting as a limiter, is formed on the second layer 132, the fourth layer 134 can suppress or prevent the etching of the second layer 132 even after two etching operations, thereby fixing the deposition angle determined by the edge 132a on the lower side of the second layer 132. Therefore, since the deposition area in each of the sub-pixels SPr, SPg, and SPb is ensured to be the target area, image quality can be improved.

[0132] Although not shown, a third layer may be disposed below the first layer 131, but is not limited thereto. The third layer may include a material with a low etch rate. The third layer may include a metal or conductive oxide material with excellent conductivity. The third layer may include an inorganic material with a low etch rate.

[0133] When the third layer includes a metal or conductive oxide material, the third layer can be an auxiliary electrode AC.

[0134] The etching rate of the third layer can be the same as or slower than the etching rate of the second layer 132. When etching the second layer 132 and the third layer simultaneously, since the etching rate of the third layer is the same as or slower than the etching rate of the second layer 132, the side of the third layer can be located on the same vertical line as the side of the second layer 132, or it can be configured to extend further from the side of the second layer 132 in the direction of the adjacent sub-pixel.

[0135] Meanwhile, the organic light-emitting display device according to the embodiment may include an encapsulation layer 135. The encapsulation layer 135 may be a barrier layer to prevent moisture and other substances from penetrating into the organic light-emitting elements 120r, 120g, and 120b.

[0136] Meanwhile, the organic light-emitting display device according to the embodiment may include a plurality of color filter layers 140r, 140g and 140b and a plurality of encapsulation layers 141r, 141g and 141b.

[0137] The multiple color filter layers 140r, 140g, and 140b may comprise resin materials. The multiple encapsulation layers 141r, 141g, and 141b may comprise multiple layers. Some of the multiple layers may comprise inorganic materials, while others may comprise organic materials.

[0138] A red filter layer 140r can be disposed in a red sub-pixel SPr. The red filter layer 140r can be disposed on a red organic light-emitting element 120r in the red sub-pixel SPr, so that only red light corresponding to the target red wavelength band disposed in the red filter layer 140r can be emitted from the wavelength band of the red light emitted from the red organic light-emitting element 120r.

[0139] A green filter layer 140g can be disposed on a green sub-pixel SPg. The green filter layer 140g can be disposed on a green organic light-emitting element 120g in the green sub-pixel SPg, so that only green light corresponding to the target green wavelength band disposed in the green filter layer 140g can be emitted from the green light emitted from the green organic light-emitting element 120g.

[0140] A blue filter layer 140b can be disposed on the blue sub-pixel SPb. The blue filter layer 140b is disposed on the blue organic light-emitting element 120b in the blue sub-pixel SPb, so that only blue light corresponding to the target blue wavelength band disposed in the blue filter layer can be emitted from the blue light emitted from the blue organic light-emitting element 120b.

[0141] Each of the multiple color filter layers 140r, 140g and 140b may have a color filter function that allows only the emission of colored light in a preset wavelength band.

[0142] As described above, compared to the absence of color filter layers, multiple color filter layers 140r, 140g, and 140b can further improve the color purity of each color. Specifically, in organic light-emitting display devices with an upward-emitting structure, they can improve color purity according to changes in viewing angle. Currently, polarizing plates can be attached to remove light reflected by the reflective material of the anode electrodes 121r, 121g, and 121b when external light is incident. However, the most important function of multiple color filter layers 140r, 140g, and 140b is that they can absorb external light to improve contrast, and further reduce costs by eliminating the polarizing plates.

[0143] Meanwhile, multiple color filter layers 140r, 140g and 140b can have the function of photosensitive patterns, used to form patterns of encapsulation layer 135, cathode electrodes 123r, 123g and 123b and organic light-emitting layers 122r, 122g and 122b respectively.

[0144] like Figure 4A As shown, the encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r can be etched using a red color filter layer 140r, so that they can be formed only in the red sub-pixel SPr. In this case, one end of the encapsulation layer 135, one end of the cathode electrode 123r, and one end of the red organic light-emitting layer 122r on the first protrusion 130-1 can be located on the same vertical line or diagonal line.

[0145] like Figure 4B As shown, the encapsulation layer 135, cathode electrode 123g, and green organic light-emitting layer 122g can be etched using a green color filter layer 140g, so that they can be formed only in the green sub-pixel SPg. In this case, one end of the encapsulation layer 135, one end of the cathode electrode 123g, and one end of the green organic light-emitting layer 122g on the first protrusion 130-1 can be located on the same vertical line or diagonal line.

[0146] like Figure 4C As shown, the encapsulation layer 135, cathode electrode 123b, and blue organic light-emitting layer 122b can be etched using the blue color filter layer 140b, so that they can be formed only in the blue sub-pixel SPb. In this case, one end of the encapsulation layer 135, one end of the cathode electrode 123b, and one end of the blue organic light-emitting layer 122b on the first protrusion 130-1 can be located on the same vertical line or diagonal line.

[0147] As an example, blue organic light-emitting element 120b, green organic light-emitting element 120g, and red organic light-emitting element 120r can be formed in this order, but are not limited thereto.

[0148] Meanwhile, the encapsulation layers 141r, 141g, and 141b may include multiple layers, which may include organic or inorganic materials.

[0149] Encapsulation layers 141r, 141g, and 141b protect multiple color filter layers 140r, 140g, and 140b made of resin material from etching. For example, when a blue encapsulation layer 141b is formed on a blue color filter layer 140b used for patterning a blue organic light-emitting element 120b, the blue encapsulation layer 141b can prevent the blue color filter layer 140b from being etched simultaneously with the green organic light-emitting element 120g. Similarly, when a green encapsulation layer 141g is formed on a green color filter layer 140g used for patterning a green organic light-emitting element 120g, the green encapsulation layer 141g can prevent the green color filter layer 140g from being etched during the etching of the red organic light-emitting element 120r. Therefore, the red encapsulation layer 141r, the green encapsulation layer 141g, and the blue encapsulation layer 141b can act as etch-preventing limiters.

[0150] Meanwhile, each of the multiple color filter layers 140r, 140g, and 140b may include a light scattering agent or a light diffusing agent. Since light is scattered or diffused by the light scattering agent or light diffusing agent, luminous efficiency can be improved.

[0151] Meanwhile, the red encapsulation layer 141r, the green encapsulation layer 141g, and the blue encapsulation layer 141b may each include multiple layers, which may include inorganic materials and organic materials.

[0152] The red encapsulation layer 141r can be disposed on the red color filter layer 140r, the green encapsulation layer 141g can be disposed on the green color filter layer 140g, and the blue encapsulation layer 141b can be disposed on the blue color filter layer 140b.

[0153] The red encapsulation layer 141r, green encapsulation layer 141g, and blue encapsulation layer 141b may each include at least one or more layers. For example, the red encapsulation layer 141r, green encapsulation layer 141g, and blue encapsulation layer 141b may each include a first inorganic layer, an organic layer located on the first inorganic layer, a second inorganic layer located on the organic layer, etc., but are not limited thereto. The first and second inorganic layers may include inorganic materials such as SiNx, and the organic layer may include resin materials, but are not limited thereto.

[0154] According to an embodiment, multiple sub-pixels SPr, SPg, and SPb can be sequentially formed to manufacture an organic light-emitting display device with a side-by-side structure. For example, a blue organic light-emitting element 120b, a blue color filter layer 140b, and a blue encapsulation layer 141b can be formed and patterned on the entire area of ​​substrate 110 using a photolithography process, thereby forming a blue sub-pixel SPb. Subsequently, a green organic light-emitting element 120g, a green color filter layer 140g, and a green encapsulation layer 141g can be formed and patterned on the entire area of ​​substrate 110 using a photolithography process, thereby forming a green sub-pixel SPg. Subsequently, a red organic light-emitting element 120r, a red color filter layer 140r, and a red encapsulation layer 141r can be formed and patterned using a photolithography process, thereby forming a red sub-pixel SPr.

[0155] Meanwhile, in the first embodiment ( Figure 1 and Figure 2 In the process, the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b can be arranged in a strip shape along the second direction Y.

[0156] Conversely, although not shown, the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b can be arranged in a dotted pattern, spaced apart from each other. The red organic light-emitting element 120r can be disposed in the red sub-pixel SPr, the green organic light-emitting element 120g can be disposed in the green sub-pixel SPg, and the blue organic light-emitting element 120b can be disposed in the blue sub-pixel SPb. A pixel P can be composed of the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0157] For example, the red organic light-emitting element 120r and the green organic light-emitting element 120g can each be isolated by a row line along the second direction Y. For example, the blue organic light-emitting element 120b can be isolated by two row lines along the second direction Y.

[0158] For example, the area of ​​the blue organic light-emitting element 120b can be larger than the area of ​​the red organic light-emitting element 120r or the green organic light-emitting element 120g. The length of the blue organic light-emitting element 120b in the second direction Y can be similar to, but not limited to, the sum of the widths of the red organic light-emitting element 120r and the green organic light-emitting element 120g.

[0159] In a pixel structure where red organic light-emitting element 120r, green organic light-emitting element 120g, and blue organic light-emitting element 120b are dot-separated from each other, there is no connection structure between adjacent sub-pixels along the first direction X. Figure 4AHowever, along the second direction Y, at least two or more edges of each sub-pixel SPr, SPg and SPb, an asymmetric opening connection structure 105 can be provided, namely, connection structure 105A and opening structure 105B.

[0160] Figures 5A to 5O The manufacturing process of the organic light-emitting display device according to the first embodiment is shown.

[0161] like Figure 5A As shown, the anode electrodes 121r, 121g, and 121b, as well as the barrier layer 113, can be formed on the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb on the substrate 110 using a first photosensitive pattern (not shown), respectively.

[0162] The substrate 110 may include a material with excellent insulating properties. For example, the substrate 110 may include plastic materials, resin materials, glass, etc. The substrate 110 may include rigid materials or flexible materials.

[0163] Anode electrodes 121r, 121g, and 121b can be formed to be spaced apart from each other between red sub-pixels SPr, green sub-pixels SPg, and blue sub-pixels SPb. Barrier layer 113 can be formed to be spaced apart from each other between red sub-pixels SPr, green sub-pixels SPg, and blue sub-pixels SPb.

[0164] Anode electrodes 121r, 121g, and 121b may include multiple conductive layers. Anode electrodes 121r, 121g, and 121b may have a triple structure composed of ITO / Ag alloy / ITO. Anode electrodes 121r, 121g, and 121b may have a triple structure composed of ITO / Ag alloy / (Ti, Mo, or MoTi).

[0165] The barrier layer 113 may include silicon-based inorganic materials, metals such as molybdenum (Mo), etc. Aluminum (Al), molybdenum (Mo), molybdenum alloys, etc., may be used as metals, but are not limited to these.

[0166] The first photosensitive pattern can be removed.

[0167] Inorganic films and photosensitive films can be formed on substrate 110, and the photosensitive film can be patterned to form a second photosensitive pattern 201.

[0168] The inorganic membrane may include inorganic or organic materials. For example, the inorganic membrane may include inorganic materials such as SiNx, SiON, etc.

[0169] By etching the inorganic film using the second photosensitive pattern 201, a first barrier 111-1 and a second barrier 111-2 can be formed. The inorganic film 111a can be etched until the blocking layer 113 is exposed in the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb.

[0170] A first partition 111-1 can be formed between a red sub-pixel SPr and a green sub-pixel SPg on the substrate 110. The first partition 111-1 can be disposed on the edge region of the barrier layer 113 between the red sub-pixel SPr and the green sub-pixel SPg. A second partition 111-2 can be formed between a green sub-pixel SPg and a blue sub-pixel SPb on the substrate 110. The second partition 111-2 can be disposed on the edge region of the barrier layer 113 between the green sub-pixel SPg and the blue sub-pixel SPb.

[0171] The barrier layer 113 can be etched using a second photosensitive pattern 201 to form an opening structure 105B. The opening structure 105B may have an undercut structure, wherein the sides of the barrier layer 113 are recessed inward from the sides of the first dam 111-1 and / or the second dam 111-2.

[0172] like Figure 5B As shown, the second photosensitive pattern 201 can be removed.

[0173] like Figure 5C As shown, the first layer 131, the second layer 132, the fourth layer 134, and the photosensitive film can be formed on the substrate 110, and the photosensitive film can be patterned to form a third photosensitive pattern 202. The fourth layer 134 can be omitted.

[0174] The first layer and the second layer 132 can have different etching selectivity. For example, the etching rate of the first layer 131 can be higher than that of the second layer 132. At least one of the first layer 131 or the second layer 132 can be used for connection to the cathode electrode ( Figure 5O The auxiliary electrodes (123r, 123g, 123b) can be connected to the first power line. Figure 3 (PL1 in the diagram). Therefore, cathode electrodes 123r, 123g, and 123b can be electrically connected to the first power line PL1 via auxiliary electrodes.

[0175] The first layer 131 and / or the second layer 132 may comprise a metal or conductive oxide material with excellent electrical conductivity. As a metal, titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), aluminum (Al), copper (Cu), and their alloys may be used. As a conductive oxide material, ITO, IZO, etc., may be used.

[0176] The fourth layer 134 may include inorganic materials, such as SiO2, SiNx, or SiONx. The fourth layer 134 may also include conductive oxide materials, such as ITO. The fourth layer 134 can serve as a limiter for the second layer 132. That is, the fourth layer 134 can serve as an etch stop layer.

[0177] Although not shown, a third layer may be formed below the first layer 131. That is, the third layer may be formed on the substrate 110, and the first layer 131 may be formed on the third layer. The third layer may include, for example, a metal or conductive oxide material with excellent conductivity. Therefore, the third layer may be an auxiliary electrode.

[0178] like Figure 5D As shown, a third photosensitive pattern 202 can be used to etch a fourth layer 134, a second layer 132, and a first layer 131 to form a first protrusion 130-1 and a second protrusion 130-2, each having a connection structure 105A. The first protrusion 130-1 can be formed on a first partition 111-1 between a red sub-pixel SPr and a green sub-pixel SPg, and the second protrusion 130-2 can be formed on a second partition 111-2 between a green sub-pixel SPg and a blue sub-pixel SPb.

[0179] Since the etching rate of the first layer 131 is greater than that of the second layer 132, the side of the first layer 131 can be etched faster than the side of the second layer 132, thereby forming an undercut structure of the connection structure 105A, in which the side of the first layer 131 is recessed inward from the side of the second layer 132.

[0180] When the fourth layer 134 is used as an etch stop layer, the second layer 132 formed under the fourth layer 134 can be protected from etching by the fourth layer 134, so that the side of the second layer 132 and the side of the fourth layer 134 can be located on the same vertical line or diagonal line.

[0181] Meanwhile, although not shown, the barrier layer 113 may be absent. Figure 5B It is etched in the process shown, and can also be etched in Figure 5D In the process shown, the etching is performed together with the etching of the first layer 131, the second layer, and the fourth layer 134. Therefore, since the connection structure 105A and the opening structure 105B are formed in batches using the same photosensitive pattern 202, the number of masks can be reduced, the process can be simplified, and the cost can be reduced.

[0182] The third photosensitive pattern 202 can be removed.

[0183] like Figure 5E As shown, a blue organic light-emitting layer 122b and a first conductive layer 123-1 can be formed on the substrate 110.

[0184] Although not shown, the blue organic light-emitting layer 122b may include a hole injection layer, etc. In the case where the blue organic light-emitting element 120b has a two-layer stacked structure, the blue organic light-emitting layer 122b may include a hole injection layer, a charge generation layer, etc.

[0185] The first conductive layer 123-1 may comprise a monolayer containing a metal (e.g., a Mg:Ag alloy). When a deposition material made of a metal (e.g., a Mg:Ag alloy) is deposited on the substrate 110, the first conductive layer 123-1 is formed on one side region of each of the blue sub-pixel SPb, the first partition 111-1, and the second partition 111-2. Because the deposition material is not deposited inside the undercut structure of the connection structure 105A, the first conductive layer 123-1 is not electrically connected to the auxiliary electrode.

[0186] like Figure 5F As shown, the second conductive layer 123-2 and the encapsulation layer (not shown) can be formed on the first conductive layer 123-1.

[0187] The second conductive layer 123-2 may include a conductive oxide material, such as ITO. The encapsulation layer may include an inorganic material.

[0188] Conductive oxide materials such as ITO can exhibit excellent step coverage characteristics. Therefore, since a material made of conductive oxide is deposited on the substrate 110 via a sputtering process, the second conductive layer 123-2 can be formed not only on one side region of each of the blue sub-pixel SPb, the first barrier 111-1, and the second barrier 111-2, but also on the inner side of the undercut structure of the connection structure 105A. Thus, the second conductive layer 123-2 can be electrically connected to the auxiliary electrode in the connection structure 105A of the second protrusion 130-2.

[0189] like Figure 5G As shown, the blue filter layer 140b may be formed on the second conductive layer 123-2, and the blue filter layer 140b may include a resin material.

[0190] Using a fourth photosensitive pattern (not shown), the blue color filter layer 140b, encapsulation layer, second conductive layer 123-2, first conductive layer 123-1, and blue organic light-emitting layer 122b can be etched, thereby forming the blue color filter layer 140b, encapsulation layer, second conductive layer 123-2, first conductive layer 123-1, and blue organic light-emitting layer 122b in the blue sub-pixel SPb. The blue color filter layer 140b, encapsulation layer, second conductive layer 123-2, first conductive layer 123-1, and blue organic light-emitting layer 122b can be formed on one side of the second protrusion 130-2.

[0191] The cathode electrode 123b may be composed of a first conductive layer 123-1 and a second conductive layer 123-2. The blue organic light-emitting element 120b may be composed of an anode electrode 121b, a blue organic light-emitting layer 122b, and a cathode electrode 123b formed in the blue sub-pixel SPb.

[0192] It can remove the fourth photosensitive pattern.

[0193] like Figure 5H As shown, a blue encapsulation layer 141b can be formed on the substrate 110.

[0194] The blue encapsulation layer 141b can be etched using a fifth photosensitive pattern (not shown) so that the blue encapsulation layer 141b can be formed on the blue color filter layer 140b in the blue sub-pixel SPb.

[0195] It can remove the fifth photosensitive pattern.

[0196] like Figure 5I As shown, the green organic light-emitting layer 122g, the first conductive layer 123-1, the second conductive layer 123-2, and the encapsulation layer 135 can be formed on the substrate 110. The cathode electrode 123g can be composed of the first conductive layer 123-1 and the second conductive layer 123-2. Therefore, the green organic light-emitting element 120g can be composed of the anode electrode 121g, the green organic light-emitting layer 122g, and the cathode electrode 123g in the green sub-pixel SPg.

[0197] The first conductive layer 123-1, which includes a metal (e.g., Mg:Ag), may not be connected to the auxiliary electrode, while the second conductive layer 123-2, which includes a conductive oxide material such as ITO, may be connected to the auxiliary electrode in each of the connection structures 105A of the first protrusion 130-1 and the second protrusion 130-2.

[0198] Although not shown, the green organic light-emitting layer 122g may include a hole injection layer, etc. In the case where the green organic light-emitting element 120g has a two-layer stacked structure, the green organic light-emitting layer 122g may include a hole injection layer, a charge generation layer, etc.

[0199] like Figure 5J As shown, a green color filter layer 140g can be formed on the substrate 110. The green color filter layer 140g may include a resin material.

[0200] Using a sixth photosensitive pattern (not shown), the green color filter layer 140g, encapsulation layer 135, cathode electrode 123g, and green organic emitting layer 122g can be etched, thereby forming the green color filter layer 140g, encapsulation layer 135, cathode electrode 123g, and green organic emitting layer 122g in the green sub-pixel SPg. The green color filter layer 140g, encapsulation layer 135, cathode electrode 123g, and green organic emitting layer 122g can be formed on one side of the first protrusion 130-1 and the other side of the second protrusion 130-2.

[0201] It can remove the sixth photosensitive pattern.

[0202] like Figure 5K As shown, a green encapsulation layer 141g can be formed on the substrate 110.

[0203] Using a seventh photosensitive pattern (not shown), a green encapsulation layer 141g can be etched such that the green encapsulation layer 141g can be formed on the green color filter layer 140g in the blue sub-pixel SPb and the green sub-pixel SPg. Although not shown, the green encapsulation layer 141g may not be formed in the blue sub-pixel SPb.

[0204] It can remove the seventh photosensitive pattern.

[0205] like Figure 5L As shown, a red organic light-emitting layer 122r, a first conductive layer 123-1, a second conductive layer 123-2, and an encapsulation layer 135 can be formed on the substrate 110. The cathode electrode 123r can be composed of the first conductive layer 123-1 and the second conductive layer 123-2. Therefore, the red organic light-emitting element 120r can be composed of the anode electrode 121r, the red organic light-emitting layer 122r, and the cathode electrode 123r in the red sub-pixel SPr.

[0206] The first conductive layer 123-1, which includes a metal (e.g., Mg:Ag), may not be connected to the auxiliary electrode, and the second conductive layer 123-2, which includes a conductive oxide material such as ITO, may be connected to the auxiliary electrode in the connection structure 105A of the first protrusion 130-1.

[0207] Although not shown, the red organic light-emitting layer 122r may include a hole injection layer, etc. In the case where the red organic light-emitting element 120r has a two-layer stacked structure, the red organic light-emitting layer 122r may include a hole injection layer, a charge generation layer, etc.

[0208] like Figure 5M As shown, a red color filter layer 140r can be formed on the substrate 110. The red color filter layer 140r may include a resin material.

[0209] Using an eighth photosensitive pattern (not shown), the red color filter layer 140r, encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r can be etched, thereby forming the red color filter layer 140r, encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r in the red sub-pixel SPr. The red color filter layer 140r, encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r can be formed on the region on the other side of the first protrusion 130-1.

[0210] It can remove the eighth photosensitive pattern.

[0211] like Figure 5N As shown, the red encapsulation layer 141r can be formed on the substrate 110.

[0212] Using a ninth photosensitive pattern (not shown), the red encapsulation layer 141r can be etched such that the red encapsulation layer 141r can be formed on the red color filter layer 140r in the blue sub-pixel SPb, green sub-pixel SPg, and red sub-pixel SPr. Although not shown, the red encapsulation layer 141r may not be formed in the blue sub-pixel SPb and green sub-pixel SPg.

[0213] It can remove the ninth photosensitive pattern.

[0214] like Figure 5O As shown, multiple encapsulation layers 143 and 144 may be formed on the substrate 110. For example, encapsulation layer 143 may include a resin material such as polycaprolactone (PCL), and encapsulation layer 144 may include an inorganic material such as silicon nitride (SiNx).

[0215] Next, the pad opening process is performed using the tenth photosensitive pattern (not shown), so that the first power line ( Figure 3 PL1 can be electrically connected to the auxiliary electrode via contact pad 103, such as Figure 3 As shown. The tenth photosensitive pattern can be removed.

[0216] After performing defect inspection and repair processes, a protective film can be attached to the substrate 110, thereby enabling the manufacture of an organic light-emitting display device.

[0217] The above describes the formation of blue organic light-emitting element 120b, green organic light-emitting element 120g, and red organic light-emitting element 120r in sequence, but the order can be changed.

[0218] Figure 6 yes Figure 5O Enlarged cross-sectional view of the asymmetric open connection structure in the diagram. Figure 7 It is shown Figure 6 Cross-sectional view of the opening structure in the diagram.

[0219] The figure shows the connecting structure 105A of the first protrusion 130-1 and the opening structure 105B formed in the first partition 111-1, but the same can be applied to the connecting structure of the second protrusion 130-2 and the opening structure formed in the second partition 111-2.

[0220] like Figure 6 As shown, the connection structure 105A of the first protrusion 130-1 can have an undercut structure. The green organic light-emitting layer 122g and the first conductive layer 123-1 can be formed in the green sub-pixel SPg through the undercut structure of the connection structure 105A. At this time, even if the first conductive layer 123-1 is not electrically connected to the auxiliary electrode, i.e., the first layer 131 and / or the second layer 132, the second conductive layer 123-2 can be electrically connected to the auxiliary electrode in the connection structure 105A. Therefore, the stability of the electrical connection of the cathode electrode 123g, including the first conductive layer 123-1 and the second conductive layer 123-2, can be ensured.

[0221] like Figure 6 and Figure 7 As shown, the green organic light-emitting layer 122g can be isolated by the opening structure 105B. The green organic light-emitting element 120g may include a hole injection layer, a charge generation layer, etc. In this case, the hole injection layer and / or the charge generation layer can be isolated correspondingly with the opening structure 105B. Therefore, leakage current flowing through the hole injection layer or the charge generation layer between the anode electrode 121g and the cathode electrode 123g can be blocked, thereby improving luminous efficiency and brightness.

[0222] The opening structure 105B may have an opening depth OD and an opening gap OD. The opening depth OD may be the depth to which the barrier layer 113 is etched. The opening gap OD may be the thickness of the barrier layer 113. The opening depth OD and the opening gap OD must be designed such that at least the charge generation layer is isolated, while the cathode electrode 123b of the blue organic light-emitting element 120b, which has a minimum thickness, is not isolated.

[0223] At the same time, such as Figure 5O As shown, the red organic light-emitting layer 122r and the green organic light-emitting layer 122g can be separated from each other on the upper side of the first protrusion 130-1, and the green organic light-emitting layer 122g and the blue organic light-emitting layer 122b can be separated from each other on the upper side of the second protrusion 130-2. Therefore, leakage current flowing along the first direction X between the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb, i.e., lateral leakage current, can be prevented, thereby improving luminous efficiency and brightness.

[0224] Meanwhile, as described above, the opening structure 105B can be formed by the barrier layer 113. During the formation of the opening structure 105B, yield management (e.g., dark spot defects) is very important.

[0225] Anode electrodes 121r, 121g, and 121b may have a triple structure composed of ITO / Ag alloy / ITO. Anode electrodes 121r, 121g, and 121b can be formed by wet etching. During wet etching, silver (Ag) compounds may be generated and may remain as particles. Therefore, removing these Ag compound particles may be important for yield management.

[0226] In addition, particles generated during dry etching of layers other than the anode electrodes 121r, 121g and 121b may remain on the surface of the anode electrodes 121r, 121g and 121b, resulting in dark spot defects.

[0227] refer to Figures 8A to 8E The method for forming an open structure 105B to remove these particles will be described.

[0228] Figures 8A to 8E A process for forming an opening structure according to one embodiment is shown. In the figure, the process of forming an opening structure 105B within a first partition 111-1 adjacent to the green sub-pixel SPg is shown, but the same process can also be applied in the process of forming an opening structure within a second partition 111-2.

[0229] like Figure 8A As shown, the anode electrode 121g and the barrier layer 113 can be formed on the substrate 110, and the photosensitive pattern 203 can be formed on the barrier layer 113.

[0230] like Figure 8B As shown, the anode electrode 121g and the barrier layer 113 can be etched using the photosensitive pattern 203, thereby forming the anode electrode 121g and the barrier layer 113 in the green sub-pixel SPg.

[0231] It can remove photosensitive pattern 203.

[0232] When the photosensitive pattern 203 is removed, the particles 161 can remain on the upper surface of the barrier layer 113.

[0233] like Figure 8C As shown, an inorganic film 111a can be formed on the substrate 110. In this case, particles 161 can be located between the barrier layer 113 and the inorganic film 111a without being removed.

[0234] like Figure 8DAs shown, a photosensitive pattern 203 can be formed on the inorganic film 111a. The photosensitive pattern 203 can be used to etch the inorganic film 111a, so that a first partition 111-1 can be formed between the red sub-pixel SPr and the green sub-pixel SPg.

[0235] Since the inorganic film 111a is etched until the barrier layer 113 is exposed, the particles 161 remaining on the upper surface of the barrier layer 113 can be removed by this etching process.

[0236] However, by etching the inorganic film 111a, other particles 162 may remain on the upper surface of the barrier layer 113.

[0237] like Figure 8E As shown, the barrier layer 113 can be etched using the photosensitive pattern 203 to form the opening structure 105B.

[0238] Since the barrier layer 113 is etched until the anode electrode 121g is exposed, other particles 162 remaining on the upper surface of the barrier layer 113 can be removed.

[0239] The photosensitive pattern 203 can be removed. The photosensitive pattern 203 can be... Figure 5A The second photosensitive pattern 201 shown.

[0240] After each etching process is performed, a cleaning process can be performed.

[0241] In addition to the formation process of the opening structure 105B as described above, the particles 161 and 162 generated during wet etching or dry etching can be removed by a cleaning process performed after each etching process, thereby preventing poor image quality and increasing yield.

[0242] Meanwhile, the asymmetric opening connection structure 105 according to this embodiment can be achieved through a dual-mask process ( Figures 9A to 9P ) or single-mask process ( Figures 10A to 10H )form.

[0243] [Dual Mask Process] Figures 9A to 9P A dual-mask process for forming an asymmetric opening connection structure according to this embodiment is illustrated. The figure shows the process of forming the opening structure 105B in the first partition 111-1 adjacent to the green sub-pixel SPg, but the same process can be applied to the process of forming the opening structure in the second partition 111-2.

[0244] like Figure 9A As shown, after cleaning the substrate 110, an anode electrode 121g can be formed on the substrate 110.

[0245] Specifically, by sequentially depositing ITO, Ag alloy and ITO on substrate 110, an anode electrode 121g composed of ITO / Ag alloy / ITO can be formed on substrate 110.

[0246] like Figure 9B As shown, after cleaning the substrate 110, a barrier layer 113, such as molybdenum (Mo), can be formed on the anode electrode 121g. Instead of molybdenum (Mo), silicon-based inorganic materials can be used.

[0247] like Figure 9C As shown, after cleaning the substrate 110, a photosensitive pattern 204 can be formed on the barrier layer 113.

[0248] like Figure 9D As shown, the photosensitive pattern 204 can be used to wet-etch the barrier layer 113.

[0249] like Figure 9E As shown, the ITO / Ag alloy / ITO of the anode electrode 121g can be batch etched using the photosensitive pattern 204. The side of the barrier layer 113 and the side of the anode electrode 121g can be located on the same vertical line or diagonal line, but are not limited thereto.

[0250] like Figure 9F As shown, photosensitive pattern 204 can be removed.

[0251] like Figure 9G As shown, after cleaning the substrate 110, an inorganic film 111a, such as silicon nitride (SiNx), can be deposited on the substrate 110.

[0252] like Figure 9H As shown, after cleaning the substrate 110, a photosensitive pattern 205 can be formed on the inorganic film 111a.

[0253] like Figure 9I As shown, after cleaning the substrate 110, the inorganic film 111a can be dry-etched using the photosensitive pattern 205 to form a first partition 111-1. The first partition 111-1 can be formed between the red sub-pixel SPr and the green sub-pixel SPg on the substrate 110.

[0254] like Figure 9J As shown, photosensitive pattern 205 can be removed.

[0255] like Figure 9K As shown, after cleaning the substrate 110, titanium (Ti) can be deposited on the substrate 110 to form a third layer 133.

[0256] like Figure 9LAs shown, the first layer 131 and the second layer 132 can be formed by sequentially depositing aluminum (Al) and titanium (Ti) on the third layer 133.

[0257] like Figure 9M As shown, after cleaning the substrate 110, a photosensitive pattern 206 can be formed on the second layer 132.

[0258] like Figure 9N As shown, after cleaning the substrate 110, the second layer 132, the first layer 131 and the third layer 133 can be sequentially dry-etched using the photosensitive pattern 206 to form the first protrusion 130-1.

[0259] like Figure 9O As shown, after cleaning the substrate 110, the first layer 131 and the barrier layer 113 can be wet-etched using the photosensitive pattern 206 to simultaneously form the connection structure 105A and the opening structure 105B. The asymmetric open connection structure 105 can be composed of the connection structure 105A and the opening structure 105B.

[0260] Therefore, the connecting structure 105A can be formed with an undercut structure, wherein the side of the first layer 131 is recessed inward from the side of the second layer 132 or the side of the third layer 133. In addition, the opening structure 105B can be formed with an undercut structure, wherein the side of the blocking layer 113 is recessed inward from the side of the first dam 111-1.

[0261] like Figure 9P As shown, the photosensitive pattern 206 can be removed. Afterward, the driving circuitry in each sub-pixel of the substrate 110 can be inspected for defects, such as defects in at least one or more transistors.

[0262] [Single Mask Process] Figures 10A to 10H A single-mask process for forming an asymmetric opening connection structure according to an embodiment is shown. In the figure, the process of forming the opening structure 105B within the first partition 111-1 adjacent to the green sub-pixel SPg is shown, but the same process can also be applied in the process of forming the opening structure within the second partition 111-2.

[0263] Due to the process of forming the anode electrode 121g and the barrier layer 113 in the green sub-pixel SPg and Figures 9A to 9F Since it is the same as that in the text, its detailed description will be omitted.

[0264] like Figure 10A As shown, after cleaning the substrate 110, an inorganic film 111a, such as silicon nitride (SiNx), can be deposited on the substrate 110.

[0265] like Figure 10BAs shown, after cleaning the substrate 110, titanium (Ti) can be deposited on the substrate 110 to form a third layer 133.

[0266] like Figure 10C As shown, aluminum (Al) and titanium (Ti) can be sequentially deposited on the third layer 133 to form the first layer 131 and the second layer 132.

[0267] like Figure 10D As shown, after cleaning the substrate 110, a photosensitive pattern 207 can be formed on the second layer 132.

[0268] like Figure 10E As shown, after cleaning the substrate 110, the second layer 132, the first layer 131 and the third layer 133 can be sequentially dry-etched using the photosensitive pattern 207 to form the first protrusion 130-1.

[0269] For example, the second layer 132 can be etched using dry etching with CF4 / O2 gas. For example, the first layer 131 can be etched using dry etching with Cl and / or HCl gas. For example, the third layer 133 can be etched using dry etching with CF4 / O2 gas.

[0270] The sides of the second layer 132, the first layer 131, and the third layer 133 can be located on the same vertical line or diagonal line.

[0271] like Figure 10F As shown, after cleaning the substrate 110, the inorganic film 111a can be dry-etched using the photosensitive pattern 207 to form the first septum 111-1. Therefore, the same photosensitive pattern 207 can be used to form the first protrusion 130-1 and the first septum 111-1.

[0272] For example, inorganic films 111a can be etched using dry etching with CF4 and He gases.

[0273] like Figure 10G As shown, after cleaning the substrate 110, the first layer 131 and the barrier layer 113 can be wet-etched using a photosensitive pattern 207 to simultaneously form a connection structure 105A and an opening structure 105B, both of which have undercut structures. The asymmetric open connection structure 105 can be composed of the connection structure 105A and the opening structure 105B.

[0274] like Figure 10H As shown, the photosensitive pattern 207 can be removed. Afterwards, defects in the driving circuitry (e.g., at least one or more transistors) in each of the sub-pixels SPr, SPg, and SPb disposed on the substrate 110 can be inspected.

[0275] At the same time, such as Figures 11A to 11C As shown, the above single-mask process ( Figures 10A to 10H Other modifications are also possible.

[0276] Figures 11A to 11C It shows Figures 10E to 10G Another modified process of the process. Figure 11A The process shown can correspond to Figure 10E The process shown Figure 11B The process shown can correspond to Figure 10F The process shown, and Figure 11C The process shown can correspond to Figure 10G The process shown.

[0277] like Figure 11A As shown, the second layer 132 can be etched using a photosensitive pattern 207 by dry etching with CF4 / O2 gas.

[0278] and Figure 10E Unlike other methods, the first layer 131 can be etched using a wet etching process. The aluminum (Al) forming the first layer 131 can be rapidly etched using a wet etching process. Therefore, a connection structure 105A with an undercut structure recessed inward from the side of the second layer 132 can be formed.

[0279] For example, the third layer 133 can be etched using dry etching with CF4 / O2 gas.

[0280] and Figure 10F Similarly, such as Figure 11B As shown, an inorganic film 111a can be etched using CF4 and He gas via dry etching with a photosensitive pattern 207 to form a first dam 111-1.

[0281] like Figure 11C As shown, the photosensitive pattern 207 can be used to wet-etch the barrier layer 113 to form the opening structure 105B.

[0282] When the barrier layer 113 is wet-etched, the first layer 131 can also be etched. Therefore, Figure 11C The opening depth D2 of the connection structure 105A described herein can be greater than Figure 10G The opening depth D1 of the connection structure 105A described herein. Therefore, when a connection structure 105A with a large opening depth D2 is required, preferably, the following can be implemented. Figures 11A to 11C The process shown.

[0283] Meanwhile, in an organic light-emitting display device with a side-by-side structure manufactured using photolithography, red sub-pixels SPr, green sub-pixels SPg, and blue sub-pixels SPb can be formed sequentially. For example, after the red organic light-emitting layer 122r, the encapsulation layer 135, etc., are deposited on the substrate 110, the red organic light-emitting layer 122r and the encapsulation layer 135 can be etched to form only the red sub-pixels SPr. In this etching process, the photosensitive film or the encapsulation layer 135 may not be able to be removed from the undercut structure (i.e., the U-shaped recess) of the connection structure 105A of the first protrusion 130-1, which may result in residual film.

[0284] Reference Figures 12A to 12D The generation of residual films will be described.

[0285] Figures 12A to 12D The appearance of the residual film produced during the formation of the red subpixel is shown. The first protrusion 130-1 is shown in the figure, but the same can be applied to the second protrusion 130-2.

[0286] like Figure 12A As shown, a first protrusion 130-1 with a connection structure 105A can be formed on the first partition 111-1. A substrate 110 can be provided below the first partition 111-1.

[0287] like Figure 12B As shown, a red organic light-emitting element 120r and an encapsulation layer 135 can be formed on the substrate 110. The cathode electrode 123r of the red organic light-emitting element 120r can be electrically connected to the first layer 131 and the third layer 133 of the first protrusion 130-1. The first layer 131 and the third layer 133 can be used as auxiliary electrodes.

[0288] The encapsulation layer 135 may include a first-first insulating layer 135-1, a first-second insulating layer 135-2, and a first-third insulating layer 135-3. For example, the first-first insulating layer 135-1 may include an inorganic material such as silicon oxide (SiOx), the first-second insulating layer 135-2 may include an inorganic material such as silicon nitride (SiNx), and the first-third insulating layer 135-3 may include an inorganic material such as silicon oxide (SiOx), but is not limited thereto.

[0289] The encapsulation layer 135 can be formed in the undercut structure of the connection structure 105A, i.e., the U-shaped recessed portion.

[0290] like Figure 12C As shown, a photosensitive pattern 208 can be formed on the substrate 110. The photosensitive pattern 208 can be formed on one side of each of the red sub-pixel SPr and the first protrusion 130-1.

[0291] like Figure 12DAs shown, the encapsulation layer 135, the cathode electrode 123r of the red organic light-emitting element 120r, and the red organic light-emitting layer 122r can be dry-etched using the photosensitive pattern 208, so that the encapsulation layer 135, the cathode electrode 123r, and the red organic light-emitting layer 122r can be formed only on one side of the red sub-pixel SPr and the first protrusion 130-1.

[0292] However, the encapsulation layer 135 or the photosensitive pattern 208 can be retained as residual films 230 and 230a in the undercut structure of the first protrusion 130-1 adjacent to the green sub-pixel SPg. These residual films 230 and 230a can be retained between the side of the first layer 131 and the underside of the second layer 132 of the first protrusion 130-1.

[0293] The photosensitive pattern 208 may include a transparent resin material with high purity and low water vapor transmission rate (WVTR). Even if a removal process of the photosensitive pattern 208 is performed, a portion of the photosensitive pattern 208 may remain without being removed inside the undercut structure, thereby forming a residual film as resin layer 136.

[0294] Since these residual films 230 and 230a may be impurities that help form new moisture penetration channels, resulting in poor image quality such as dark spots, they must be removed.

[0295] Specifically, in wet processes, residual films 230 and 230a become channels for the penetration of developers, etchants, and strippers. Furthermore, in dry processes, after product completion, they become channels for moisture penetration, which can be fatal to product lifespan due to the introduction of dark spots, impacting long-term reliability. Since the final subpixels (e.g., blue subpixel SPb) undergo two patterning processes to form red subpixels SPr and green subpixels SPg, the dark spots caused by residual films 230 and 230a can increase even further, further increasing the defect rate.

[0296] Figure 13A The residual film produced during the formation of the red subpixel is shown.

[0297] like Figure 13A As shown, when the connecting structure 105A is formed on the first side of the first protrusion 130-1 adjacent to the green sub-pixel SPg before the green sub-pixel SPg is formed, residual films 230 and 230a can be formed on the undercut structure of the connecting structure 105A.

[0298] like Figure 13AAs shown, the encapsulation layer 135 and the red organic light-emitting element 120r formed on the substrate 110 can be dry-etched, thereby forming the cathode electrode 123r of the encapsulation layer 135 and the red organic light-emitting element 120r and the red organic light-emitting layer 122r on one side region of the red sub-pixel SPr and the first protrusion 130-1.

[0299] Afterwards, an ashing process can be performed to make the photosensitive pattern ( Figure 12D 208) can be peeled off and can be retained in the undercut structure on both sides of the first protrusion 130-1. This ashing process can be performed as an anisotropic process.

[0300] Moisture penetration can be blocked by the photosensitive pattern 208 in the undercut structure on both sides of the first protrusion 130-1.

[0301] The encapsulation layer 135 and the photosensitive pattern 208 can be retained in the undercut structure of the first protrusion 130-1. The encapsulation layer 135 and the photosensitive pattern 208 retained in the undercut structure of the first protrusion 130-1 adjacent to the red sub-pixel SPr can prevent moisture penetration. However, the encapsulation layer 135 and the photosensitive pattern 208 retained in the undercut structure of the first protrusion 130-1 adjacent to the green sub-pixel SPg or in the undercut structure of the second protrusion 130-2 adjacent to the blue sub-pixel SPb may cause dark spots in the green sub-pixel SPg or the blue sub-pixel SPb.

[0302] Figure 13B An example is shown where no residual film was produced.

[0303] like Figure 13B As shown, photosensitive patterns can be removed by wet etching. Figure 13A 208), so that the photosensitive pattern 208 is not retained as a residual film 230 in the undercut structure of the first protrusion 130-1 adjacent to the green sub-pixel SPg.

[0304] However, the encapsulation layer 135 can still be retained as a residual film 230a in the undercut structure of the first protrusion 130-1 adjacent to the green sub-pixel SPg. Furthermore, the red organic light-emitting layer 122r on the first protrusion 130-1 may be etched during the stripping process, which could potentially lead to poor image quality due to another foreign material or new channels for moisture penetration in subsequent processes.

[0305] To address this issue, just-in-time (JIT) process technology can be used in this embodiment. JIT process technology is a process technology that can immediately form the connection structure 105A or the opening structure 105B when it is needed. That is, by forming the connection structure 105A or the opening structure 105B immediately when needed without pre-forming it, defects such as the aforementioned dark spots can be prevented. Here, the connection structure 105A or the opening structure 105B may have an undercut structure or a U-shaped recess. The JIT process technology of this embodiment can be applied to a series of full processes for immediately forming the connection structure 105A and / or the opening structure 105B when needed, and for forming the corresponding sub-pixels after forming the connection structure 105A and / or the opening structure 105B.

[0306] Figures 14A to 14D The diagram illustrates a process for forming a red subpixel to prevent residual film from appearing on the second side of the first protrusion adjacent to the green subpixel. The diagram shows the process for forming the red subpixel SPr, but the same process can be applied to forming the green subpixel SPg or the blue subpixel SPb. Furthermore, the diagram shows the formation of the connection structure 105A and the opening structure 105B using a JIT process, but the opening structure 105B can be omitted.

[0307] like Figure 14A As shown, anode electrodes 121r and 121g can be formed on the red sub-pixel SPr and green sub-pixel SPg of substrate 110, respectively.

[0308] A first partition 111-1 and a first protrusion 130-1 can be formed on the substrate 110 between the red sub-pixel SPr and the green sub-pixel SPg. An opening structure 105B can be formed on the lower edge region of the first partition 111-1.

[0309] The first connection structure 171 can be formed on the first side of the first protrusion 130-1, that is, on the side adjacent to the red sub-pixel SPr. However, the second connection structure may not be formed on the second side of the first protrusion 130-1, that is, not on the side adjacent to the green sub-pixel SPg. This is to prevent residual film from being generated by the second connection structure when the encapsulation layer 135 or photosensitive pattern is removed later. The second connection structure on the second side of the first protrusion 130-1 can be formed later when the green sub-pixel SPg is formed.

[0310] like Figure 14B As shown, a red organic light-emitting layer 122r, a cathode electrode 123r, an encapsulation layer 135, etc. can be formed on the substrate 110.

[0311] like Figure 14CAs shown, a photosensitive film can be formed on the substrate 110 and patterned thereon, thereby forming a photosensitive pattern on one side of the red sub-pixel SPr and the first protrusion 130-1.

[0312] The encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r on the other side of the green sub-pixel SPg and the first protrusion 130-1 can be removed by an etching process using a photosensitive pattern. Afterward, the photosensitive pattern can be removed. Therefore, the red organic light-emitting element 120r can be formed in the red sub-pixel SPr.

[0313] like Figure 14C As shown, the second connecting structure 172 is not yet formed on the second side of the first protrusion 130-1. Furthermore, the second side of the first protrusion 130-1 may have a flat or straight surface. Therefore, as... Figure 14B As shown, when the red sub-pixel SPg is formed, the encapsulation layer 135 or photosensitive film formed on the second side of the first protrusion 130-1 can be removed without forming a residual film.

[0314] like Figure 14D As shown, after the red sub-pixel SPr is formed, the green sub-pixel SPg can be formed. To form the green sub-pixel SPg, a second connecting structure 172 needs to be formed on the second side of the first protrusion 130-1. Therefore, when the green sub-pixel SPg needs to be formed, the second connecting structure 172 and the opening structure can be immediately formed on the second side of the first protrusion 130-1 using JIT process technology.

[0315] Subsequently, the green organic light-emitting layer 122g, the cathode electrode 123g, the encapsulation layer 135, etc., can be formed on the substrate 110. Then, the encapsulation layer 135, the cathode electrode 123g, and the green organic light-emitting layer 122g can be removed from the remaining area except for the green sub-pixel SPg and the area on the other side of the first protrusion 130-1 using a photosensitive pattern. The photosensitive pattern can be removed. Therefore, the green organic light-emitting element 120g can be formed in the green sub-pixel SPg.

[0316] In summary, JIT process technology can be a process technology that forms the connection structure 105A and / or opening structure 105B of this embodiment at the "necessary location" and "necessary time".

[0317] like Figure 5D As shown, when the connecting structure 105A is pre-formed on the two sides of the first protrusion 130-1 and the two sides of the second protrusion 130-2, as... Figures 5F to 5GAs shown, during the process of forming the blue organic light-emitting element 120b in the blue sub-pixel SPb, a residual film is generated on the connection structure 105A, etc., on the two sides of the first protrusion 130-1. Figure 12D (230, 230a). Furthermore, such as... Figure 5I and 5J As shown, during the process of forming the green organic light-emitting element 120g in the green sub-pixel SPg, residual films 230 and 230a are generated on the connection structure 105A on one side of the first protrusion 130-1. The presence of dark spots caused by these residual films 230 and 230a reduces the yield and generates additional dark spots during product use, which reduces product reliability.

[0318] although Figures 5A to 5O The blue organic light-emitting element 120b, the green organic light-emitting element 120g, and the red organic light-emitting element 120r are shown to be formed in this order, but this order can be changed.

[0319] However, according to the embodiment, when forming the corresponding sub-pixels SPr, SPg, and SPb, a JIT process can be used to form a connecting structure 105A on the sides of protrusions 130-1 and 130-2 adjacent to the corresponding sub-pixels SPr, SPg, and SPb. In this case, since the connecting structure 105A is not formed on the side of the corresponding protrusion when another sub-pixel is formed, no residual film is generated on the side of the corresponding protrusion. Therefore, the occurrence of dark spots due to residual films 230 and 230a can be prevented in advance, thereby increasing yield and enhancing product reliability.

[0320] Specifically, when it is necessary to form a red sub-pixel SPr, a first connection structure 171 can be formed on the first side of the first protrusion 130-1 using JIT process technology, and then the red sub-pixel SPr can be formed.

[0321] After forming the first connection structure 171 and the red organic light-emitting element 120r on the red sub-pixel SPr, it is now time to form the green sub-pixel SPg. At this time, the second connection structure 172 can be formed on the second side of the first protrusion 130-1 using JIT process technology, and then the green sub-pixel SPg can be formed.

[0322] After forming the second connection structure 172 and the green organic light-emitting element 120g on the green sub-pixel SPg, it is now time to form the blue sub-pixel SPb. At this time, the third connection structure 173 can be formed on the second side of the second protrusion 130-2 (i.e., on the side adjacent to the blue sub-pixel SPb) using JIT process technology. After forming the third connection structure 173, the blue organic light-emitting element 120b can be formed on the blue sub-pixel SPb.

[0323] Reference Figures 15A to 15K , Figures 16A to 16J as well as Figures 17A to 17K This describes the entire process of forming the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb using a first JIT process technology. Although in Figures 15A to 15K , Figures 16A to 16J and Figures 17A to 17K The opening structure 105B is not shown, but the opening structure 105B can also be formed when the connection structure 105A is formed using the first JIT process technology.

[0324] In the following description, shapes, structures, functions, processes, etc. that overlap with the above descriptions are omitted.

[0325] Figures 15A to 15K The detailed process for forming the red subpixel using the first JIT process technology is shown.

[0326] like Figure 15A As shown, anode electrodes 121r, 121g, and 121b can be formed on the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb of substrate 110, respectively.

[0327] A first partition 111-1 and a first protrusion 130-1 may be formed on the substrate 110 between a red sub-pixel SPr and a green sub-pixel SPg. A second partition 111-2 and a second protrusion 130-2 may be formed on the substrate 110 between a green sub-pixel SPg and a blue sub-pixel SPb.

[0328] like Figure 15B As shown, the photosensitive pattern 211 can be formed on the green sub-pixel SPg, the area on the other side of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2.

[0329] like Figure 15CAs shown, the first protrusion 130-1 can be etched using a photosensitive pattern 211, thereby forming a first connection structure 171 on a first side of the first protrusion 130-1 (i.e., on the side adjacent to the red sub-pixel SPr). The first connection structure 171 may have an undercut structure, wherein the side of the first layer 131 is recessed inward from the side of the second layer 132 or the third layer 133.

[0330] like Figure 15D As shown, photosensitive pattern 211 can be removed.

[0331] like Figure 15E As shown, the red organic light-emitting layer 122r can be deposited on the substrate 110.

[0332] like Figure 15F As shown, the cathode electrode 123r can be deposited on the red organic light-emitting layer 122r. The cathode electrode 123r can be electrically connected to an auxiliary electrode, such as at least one of the first layer 131, the second layer 132, or the third layer 133, through the side portion of the first protrusion 130-1.

[0333] like Figure 15G As shown, an encapsulation layer 135 can be deposited on the cathode electrode 123r.

[0334] like Figure 15H As shown, the photosensitive pattern 212 can be formed on a side region of the red sub-pixel SPr and the first protrusion 130-1.

[0335] like Figure 15I As shown, the encapsulation layer 135 can be dry-etched using the photosensitive pattern 212, thereby removing the encapsulation layer 135 on the green sub-pixel SPg, the area on the other side of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2.

[0336] like Figure 15J As shown, the cathode electrode 123r and the red organic light-emitting layer 122r can be dry-etched using the photosensitive pattern 212, thereby removing the green sub-pixel SPg, the area on the other side of the first protrusion 130-1, the blue sub-pixel SPb, and the cathode electrode 123r and the red organic light-emitting layer 122r on the second protrusion 130-2.

[0337] like Figure 15K As shown, the photosensitive pattern 212 can be removed. Therefore, the red organic light-emitting element 120r and the encapsulation layer 135 can be formed on the red sub-pixel SPr.

[0338] Therefore, when forming the red organic light-emitting element 120r, the connection structure 105A may not be formed on the second side of the first protrusion 130-1, that is, on the side adjacent to the green sub-pixel SPg. The second side of the first protrusion 130-1 may have a flat surface or a straight surface. Therefore, the organic light-emitting layer, cathode electrodes 123r, 123g, and 123b, and encapsulation layer 135 formed on the second side of the first protrusion 130-1 can be easily removed without leaving any residual film.

[0339] After that, the completion of the red sub-pixel SPr is checked, and defects in the red sub-pixel SPr can be detected.

[0340] Figures 16A to 16J The detailed process for forming green subpixels using the first JIT process technology is shown.

[0341] like Figure 16A As shown, the photosensitive pattern 213 can be formed on one side of the red sub-pixel SPr, the first protrusion 130-1, the blue sub-pixel SPb, and the other side of the second protrusion 130-2.

[0342] like Figure 16B As shown, the first protrusion 130-1 can be etched using a photosensitive pattern 213, thereby forming a second connection structure 172 on the second side of the first protrusion 130-1 (i.e., on the side adjacent to the green sub-pixel SPg). The second connection structure 172 may have an undercut structure, wherein the side of the first layer 131 is recessed inward from the side of the second layer 132 or the third layer 133.

[0343] like Figure 16C As shown, photosensitive pattern 213 can be removed.

[0344] like Figure 16D As shown, the green organic light-emitting layer 122g can be deposited on the substrate 110.

[0345] like Figure 16E As shown, the cathode electrode 123g can be deposited on the green organic light-emitting layer 122g. The cathode electrode 123g can be electrically connected to an auxiliary electrode, such as at least one of the first layer 131, the second layer 132, or the third layer 133, through the side of the first protrusion 130-1.

[0346] like Figure 16F As shown, an encapsulation layer 135 can be deposited on the cathode electrode 123g.

[0347] like Figure 16G As shown, the photosensitive pattern 214 can be formed on the area on the other side of the green sub-pixel SPg and the first protrusion 130-1.

[0348] like Figure 16H As shown, the encapsulation layer 135 can be dry-etched using the photosensitive pattern 214, thereby removing the encapsulation layer 135 on the red sub-pixel SPr, one side region of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2.

[0349] like Figure 16I As shown, the cathode electrode 123g and the green organic light-emitting layer 122g can be dry-etched using the photosensitive pattern 214, thereby removing the cathode electrode 123g and the green organic light-emitting layer 122g on the red sub-pixel SPr, one side area of ​​the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2.

[0350] like Figure 16J As shown, the photosensitive pattern 214 can be removed. Therefore, the green organic light-emitting element 120g and the encapsulation layer 135 can be formed on the green sub-pixel SPg.

[0351] Therefore, when forming the green organic light-emitting element 120g, the connecting structure 105A may not be formed on the second side of the second protrusion 130-2, that is, it may not be formed on the side adjacent to the blue sub-pixel SPb. The second side of the second protrusion 130-2 may have a flat surface or a straight surface. Therefore, the organic light-emitting layer, the cathode electrode 123g, and the encapsulation layer 135 formed on the second side of the second protrusion 130-2 can be easily removed without leaving as residual film.

[0352] In the figure, the area of ​​the red organic light-emitting layer 122r on the upper side of the first protrusion 130-1 is shown as larger than the area of ​​the green organic light-emitting layer 122g, but they can have the same area.

[0353] After that, the completion of the green sub-pixel SPg is checked, and defects in the green sub-pixel SPg can be detected.

[0354] Figures 17A to 17K The detailed process for forming the blue subpixel using the first JIT process technology is shown.

[0355] like Figure 17A As shown, a substrate 110 on which red sub-pixels SPr and green sub-pixels SPg are formed can be prepared.

[0356] like Figure 17B As shown, the photosensitive pattern 215 can be formed on one side of the red sub-pixel SPr, the first protrusion 130-1, the green sub-pixel SPg, and the second protrusion 130-2.

[0357] like Figure 17CAs shown, the second protrusion 130-2 can be etched using a photosensitive pattern 215, thereby forming a third connection structure 173 on the second side of the second protrusion 130-2 (i.e., on the side adjacent to the blue sub-pixel SPb). The third connection structure 173 may have an undercut structure, wherein the side of the first layer 131 is recessed inward from the side of the second layer 132 or the third layer 133.

[0358] like Figure 17D As shown, photosensitive pattern 215 can be removed.

[0359] like Figure 17E As shown, a blue organic light-emitting layer 122b can be deposited on the substrate 110.

[0360] like Figure 17F As shown, the cathode electrode 123b can be deposited on the blue organic light-emitting layer 122b. The cathode electrode 123b can be electrically connected to an auxiliary electrode, such as at least one of the first layer 131, the second layer 132, or the third layer 133, via the side of the second protrusion 130-2.

[0361] like Figure 17G As shown, an encapsulation layer 135 can be deposited on the cathode electrode 123b.

[0362] like Figure 17H As shown, the photosensitive pattern 216 can be formed on the area on the other side of the blue sub-pixel SPb and the second protrusion 130-2.

[0363] like Figure 17I As shown, the encapsulation layer 135 can be dry-etched using the photosensitive pattern 216, thereby removing the encapsulation layer 135 on one side of the red sub-pixel SPr, the first protrusion 130-1, the green sub-pixel SPg, and the second protrusion 130-2.

[0364] like Figure 17J As shown, the cathode electrode 123b and the blue organic light-emitting layer 122b can be dry-etched using the photosensitive pattern 216, thereby removing the cathode electrode 123b and the blue organic light-emitting layer 122b on one side of the red sub-pixel SPr, the first protrusion 130-1, the green sub-pixel SPg, and the second protrusion 130-2.

[0365] like Figure 17K As shown, the photosensitive pattern 216 can be removed. Therefore, the blue organic light-emitting element 120b and the encapsulation layer 135 can be formed in the blue sub-pixel SPb.

[0366] In the figure, the area of ​​the green organic light-emitting layer 122g on the upper side of the first protrusion 130-1 is shown as larger than the area of ​​the blue organic light-emitting layer 122b, but they can have the same area.

[0367] After that, an inspection is performed on whether the blue sub-pixel SPb has been completed, and defects in the blue sub-pixel SPb can be detected.

[0368] like Figures 15A to 15K , Figures 16A to 16J and Figures 17A to 17K As shown, in the substrate structure using the first JIT process, a first partition 111-1 and a first protrusion 130-1 are formed, and before the red organic light-emitting element 120r is formed, a first connection structure 171 can be formed on the side of the first protrusion 130-1 adjacent to the red sub-pixel SPr.

[0369] On the contrary, such as Figure 18 As shown, in the substrate structure using the second JIT process technology, the first partition 111-1 and the first connection structure 171 can be formed before the red organic light-emitting element 120r is formed. Furthermore, as... Figure 23 As shown, in the substrate structure using the third JIT process technology, a first partition 111-1 is formed, and a first connection structure 171 can be formed before the formation of the red organic light-emitting element 120r.

[0370] Figure 18 and Figure 23 The diagram shows an opening structure 105B formed using a barrier layer 113, but the opening structure 105B can be omitted.

[0371] The manufacturing methods using the second and third JIT processes are described in more detail below.

[0372] Figure 18 The substrate structure prior to the implementation of the second JIT process is shown. The red sub-pixel SPr is shown in the accompanying figure, but the same can be applied to the green sub-pixel SPg and the blue sub-pixel SPb.

[0373] like Figure 18 As shown, an inorganic film 111a, a third layer 133, a first layer 131, and a second layer 132 can be formed on the substrate 110.

[0374] Subsequently, during the formation of the red sub-pixel SPr, the third layer 133, the first layer 131, and the second layer 132 can be etched using a second JIT process to form the first connection structure 171. The inorganic film 111a and the barrier layer 113 can also be etched to form the first dam 111-1 and the opening structure 105B. At this point, the inorganic film 111a can be etched until the anode electrodes 121r, 121g, and 121b are exposed in the red sub-pixel SPr.

[0375] Subsequently, the red organic light-emitting layer 122r, cathode electrodes 123r, 123g and 123b, encapsulation layer 135, etc., can be deposited and patterned, so that the red organic light-emitting element 120r and encapsulation layer 135 can be formed in the red sub-pixel SPr.

[0376] Figure 19 The diagram illustrates a first process for forming the interconnect structure using a second JIT process prior to forming the green organic light-emitting element. The green sub-pixel SPg is shown in the accompanying figure, but the same procedure can be applied to the red sub-pixel SPr and the blue sub-pixel SPb.

[0377] In step R10, the red organic light-emitting element 120r can be formed in the red sub-pixel SPr of the substrate 110 (see...). Figure 18 At this time, anode electrodes 121r, 121g, and 121b, inorganic film 111a, third layer 133, first layer 131, and second layer 132 can be formed on substrate 110 in green sub-pixel SPg. The etching rate of first layer 131 can be greater than the etching rate of second layer 132 or third layer 133.

[0378] In step G01, a photosensitive pattern 221 may be formed on the remaining area of ​​the substrate 110, excluding the green sub-pixel SPg.

[0379] In step G02a, the second layer 132 can be dry-etched using the photosensitive pattern 221, thereby removing the second layer 132 in the green sub-pixel SPg.

[0380] In step G02b, the first layer 131 and the third layer 133 can be batch-wet etched using the photosensitive pattern 221, thereby removing the first layer 131 and the third layer 133 from the green sub-pixel SPg. In this case, the first layer 131 can be etched faster than the third layer 133, thereby forming a first protrusion 130-1 with a second connection structure 172, in which the side of the first layer 131 is recessed inward from the side of the second layer 132 or the third layer 133. In the figure, the side of the third layer 133 has a shape that is further recessed inward than the side of the second layer 132, but is not limited thereto.

[0381] In step G02c, the inorganic film 111a can be dry-etched in a self-aligned manner using the photosensitive pattern 221 to form the first septum 111-1. Through this self-aligned dry etching, the end of the first septum 111-1 can be perpendicular to the end of the photosensitive pattern 221 or the second layer 132.

[0382] In step G03, the photosensitive pattern 221 can be removed.

[0383] Subsequently, green organic light-emitting elements can be formed in the green sub-pixel SPg.

[0384] Figure 20 This illustrates a second process for forming the interconnect structure using a second JIT process prior to forming the green organic light-emitting element. The green sub-pixel SPg is shown in the accompanying figure, but the same procedure can be applied to the red sub-pixel SPr and the blue sub-pixel SPb.

[0385] Because steps R10, G01, and G02a are related to Figure 19 Steps R10, G01, and G02a shown in the figure are the same, so their description is omitted.

[0386] In step G02b, the first layer 131, the third layer 133, and the inorganic film 111a can be dry-etched in a self-aligned manner using the photosensitive pattern 221, thereby forming the first protrusion 130-1 and the first septum 111-1. Due to the self-aligned dry etching, the side of the first layer 131 can be located on the same vertical line or diagonal line as the side of the second layer 132 and / or the side of the third layer 133.

[0387] In step G02c, the first layer 131 and the third layer 133 can be batch wet-etched using the photosensitive pattern 221. Therefore, the first layer 131 can be etched faster than the third layer 133, so that a first protrusion 130-1 with a second connection structure 172 recessed inward from the side of the first layer 131 or the side of the third layer 133 can be formed.

[0388] In step G03, the photosensitive pattern can be removed.

[0389] Subsequently, green organic light-emitting elements can be formed in the green sub-pixel SPg.

[0390] Reference Figures 21A to 21K and Figures 22A to 22M This will describe the entire process of forming the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb using a second JIT process technology. Although in Figures 21A to 21K and Figures 22A to 22M The opening structure is not shown, but it can be provided.

[0391] In the following description, shapes, structures, functions, processes, etc. that overlap with the above descriptions are omitted.

[0392] Figures 21A to 21K The detailed process for forming the red subpixel using the second JIT process technology is shown.

[0393] like Figure 21AAs shown, inorganic film 111a, third layer 133, first layer 131 and second layer 132 can be formed on substrate 110 including red sub-pixel SPr, green sub-pixel SPg and blue sub-pixel SPb.

[0394] like Figure 21B As shown, the photosensitive pattern 231 can be formed on the remaining area of ​​the substrate 110 except for the red sub-pixel SPr. The photosensitive pattern 231 can be formed on the green sub-pixel SPg and the blue sub-pixel SPb of the substrate 110. The photosensitive pattern 231 can also be formed in the area between the red sub-pixel SPr and the green sub-pixel SPg, and in the area between the green sub-pixel SPg and the blue sub-pixel SPb of the substrate 110.

[0395] like Figure 21C As shown, the second layer 132 can be dry-etched using the photosensitive pattern 231.

[0396] like Figure 21D As shown, the first layer 131 and the third layer 133 can be batch wet-etched using a photosensitive pattern 231 to form a first connection structure 171 in the region contacting the red sub-pixel SPr. The first connection structure 171 may have an undercut structure or a U-shaped recess.

[0397] like Figure 21E As shown, the inorganic film 111a can be dry-etched using the photosensitive pattern 231 to expose the anode electrode 121r to the red sub-pixel SPr.

[0398] like Figure 21F As shown, photosensitive pattern 231 can be removed.

[0399] like Figure 21G As shown, a red organic light-emitting layer 122r and a cathode electrode 123r can be deposited on the substrate 110.

[0400] like Figure 21H As shown, an encapsulation layer 135 can be deposited on the cathode electrode 123r. The encapsulation layer 135 may include, but is not limited to, a first-first insulating layer comprising an inorganic material such as SiO2 and a first-second insulating layer comprising an inorganic material such as SiNx.

[0401] like Figure 21I As shown, the photosensitive pattern 232 can be formed on the red sub-pixel SPr of the substrate 110. The photosensitive pattern 232 can also be formed on the portion of the substrate 110 located between the red sub-pixel SPr and the green sub-pixel SPg, and on the portion of the substrate 110 located between the green sub-pixel SPg and the blue sub-pixel SPb.

[0402] like Figure 21JAs shown, the encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r can be dry-etched using photosensitive pattern 232, thereby removing the encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r from the green sub-pixels SPg and blue sub-pixels SPb. Therefore, an opening 261 can be formed, exposing the second layer 132 in the green sub-pixels SPg and blue sub-pixels SPb. The encapsulation layer 135, cathode electrode 123r, and red organic light-emitting layer 122r on the other portion of the substrate 110 between the red sub-pixels SPr and the green sub-pixels SPg, and on the other portion of the substrate 110 between the green sub-pixels SPg and the blue sub-pixels SPb, can be removed.

[0403] like Figure 21K As shown, the photosensitive pattern 232 can be removed, thereby forming a red sub-pixel SPr including a red organic light-emitting element 120r.

[0404] After that, you can use, such as Figures 22A to 22M The second JIT process technology shown is used to form the green sub-pixel SPg and the blue sub-pixel SPb.

[0405] Figures 22A to 22M The detailed process for forming green and blue subpixels using the second JIT process technology is shown.

[0406] like Figure 22A As shown, the photosensitive pattern 233 can be formed on the remaining area of ​​the substrate 110, excluding the green sub-pixel SPg. The photosensitive pattern 233 can also be formed on the red sub-pixel SPr and the blue sub-pixel SPb of the substrate 110. Furthermore, the photosensitive pattern 233 can be formed on the area between the red sub-pixel SPr and the green sub-pixel SPg, and on the area between the green sub-pixel SPg and the blue sub-pixel SPb in the substrate 110.

[0407] like Figure 22B As shown, the second layer 132 can be dry-etched using the photosensitive pattern 233.

[0408] like Figure 22C As shown, the first layer 131 and the third layer 133 can be batch-wet-etched using a photosensitive pattern 233. Therefore, a second connection structure 172 can be formed, wherein the side of the first layer 131 is recessed inward from the side of the second layer 132. A first protrusion 130-1 having the first connection structure 171 and the second connection structure 172 can be formed between the red sub-pixel SPr and the green sub-pixel SPg.

[0409] like Figure 22DAs shown, the inorganic film 111a can be dry-etched using a photosensitive pattern 233. Therefore, a first partition 111-1 can be formed between the red sub-pixel SPr and the green sub-pixel SPg. In this case, a first protrusion 130-1 can be formed on the upper side of the first partition 111-1.

[0410] Therefore, an opening 262 can be formed, in which the anode electrode 121g is exposed in the green sub-pixel SPg.

[0411] Meanwhile, since the third layer 133 is not used for CF4 and He gas etching of the inorganic film 111a in dry etching, the area where the inorganic film 111a is removed can be the same as the area where the third layer 133 is removed. That is, the side of the third layer 133 and the side of the first partition 111-1 can be located on the same vertical line or diagonal line. Therefore, the width of the first partition 111-1 can be narrowed, and conversely, the opening of the green sub-pixel SPg can be enlarged.

[0412] like Figure 22E As shown, the photosensitive pattern 233 can be removed. In this case, the photosensitive pattern 233 formed on the first connection structure 171 can be retained as a residual film 241 instead of being removed.

[0413] like Figure 22F As shown, a green sub-pixel SPg, including a green organic light-emitting element 120g, can be formed. Since the process for forming the green organic light-emitting element 120g is the same as the process for forming the red organic light-emitting element 120r described above (…), Figures 22G to 22K Therefore, its detailed description will be omitted.

[0414] Simultaneously, after forming the green sub-pixel SPg, a photosensitive pattern 234 can be formed on the remaining area of ​​the substrate 110, excluding the blue sub-pixel SPb. The photosensitive pattern 234 can be formed on the red sub-pixel SPr and the green sub-pixel SPg of the substrate 110. The photosensitive pattern 234 can also be formed in the area between the red sub-pixel SPr and the green sub-pixel SPg, and in the area between the green sub-pixel SPg and the blue sub-pixel SPb on the substrate 110.

[0415] like Figure 22G As shown, the second layer 132 can be dry-etched using the photosensitive pattern 234.

[0416] like Figure 22HAs shown, the first layer 131 and the third layer 133 can be batch-wet-etched using a photosensitive pattern 234. Therefore, a third connection structure 173 can be formed, wherein the side portion of the first layer 131 is recessed inward from the side portion of the second layer 132. A second protrusion 130-2 having the second connection structure 172 and the third connection structure 173 can be formed between the green sub-pixel SPg and the blue sub-pixel SPb.

[0417] like Figure 22I As shown, the inorganic film 111a can be dry-etched using a photosensitive pattern 234. Therefore, a second partition 111-2 can be formed between the green sub-pixel SPg and the blue sub-pixel SPb. In this case, a second protrusion 130-2 can be formed on the upper side of the second partition 111-2.

[0418] Therefore, an opening 263 can be formed, in which the anode electrode 121b is exposed in the blue sub-pixel SPb.

[0419] Meanwhile, since the third layer 133 is not used for CF4 and He gas etching of the inorganic film 111a during dry etching, the area from which the inorganic film 111a is removed can be the same as the area from which the third layer 133 is removed. That is, the sides of the third layer 133 and the sides of the second partition 111-2 can be located on the same vertical line or diagonal. Therefore, the width of the second partition 111-2 can be narrower, and conversely, the aperture area of ​​the blue sub-pixel SPb can be larger.

[0420] like Figure 22J As shown, the photosensitive pattern 234 can be removed. In this case, the photosensitive pattern 234 formed in the second connection structure 172 may not be removed, but may be retained as a residual film 242.

[0421] like Figure 22K As shown, a blue sub-pixel SPb, including a blue organic light-emitting element 120b, can be formed. The process for forming the blue organic light-emitting element 120b is the same as the process for forming the red organic light-emitting element 120r described above. Figures 22G to 22K Since they are the same, their detailed description will be omitted.

[0422] When the photosensitive pattern (not shown) is removed after the blue organic light-emitting element 120b is formed on the blue sub-pixel SPb, the photosensitive pattern formed on the third connection structure 173 may not be removed, but may be retained as a residual film 243.

[0423] like Figure 22L and 22M As shown, multiple encapsulation layers 143 and 144 can be formed on the substrate 110. Encapsulation layers 143 and 144 may comprise organic or inorganic materials with excellent insulation properties and moisture penetration barrier properties.

[0424] Encapsulation layer 143 can be formed by inkjet printing, and encapsulation layer 144 can be formed by PECVD, but are not limited to these processes.

[0425] Organic light-emitting display devices can be manufactured using the series of processes described above.

[0426] The above describes the formation of sub-pixels in the order of red sub-pixels SPr, green sub-pixels SPg, and blue sub-pixels SPb, but the order can be changed.

[0427] Figure 23 The substrate structure prior to the implementation of the third JIT process technology is shown. The red sub-pixel SPr is shown in the accompanying figure, but the same can be applied to the green sub-pixel SPg and the blue sub-pixel SPb.

[0428] like Figure 23 As shown, a first partition 111-1 can be formed on the substrate 110. A third layer 133, a first layer 131, and a second layer 132 can be formed on the first partition 111-1.

[0429] Subsequently, during the formation of the red sub-pixel SPr, the third layer 133, the first layer 131, and the second layer 132 can be etched using a third JIT process to form the first connection structure 171. By etching the third layer 133, the first layer 131, and the second layer 132, the anode electrodes 121r, 121g, and 121b in the red sub-pixel SPr can be exposed.

[0430] The barrier layer 113 can be etched using a third JIT process to form the opening structure 105B.

[0431] Subsequently, the red organic light-emitting layer 122r, the cathode electrode 123r, the encapsulation layer 135, etc., can be deposited and patterned, so that the red organic light-emitting element 120r and the encapsulation layer 135 can be formed in the red sub-pixel SPr.

[0432] Figure 24 This diagram illustrates the process of forming the interconnect structure before forming the green organic light-emitting element using the third JIT process technology. The figure shows the green sub-pixel SPg, but the same can be applied to the red sub-pixel SPr and the blue sub-pixel SPb.

[0433] In step R10, a red organic light-emitting element 120r can be formed on the red sub-pixel SPr of the substrate 110 (see...). Figure 23At this time, anode electrodes 121r, 121g, and 121b, third layer 133, first layer 131, and second layer 132 can be formed on the green sub-pixel SPg on the substrate 110. The etching rate of the first layer 131 can be greater than the etching rate of the second layer 132 or the third layer 133. In addition, a first partition 111-1 can be formed between the red sub-pixel SPr and the green sub-pixel SPg.

[0434] In step G01, a photosensitive pattern 241 may be formed on the remaining area of ​​the substrate 110, excluding the green sub-pixel SPg.

[0435] In step G02a, the second layer 132 can be dry-etched using the photosensitive pattern 241, thereby removing the second layer 132 in the green sub-pixel SPg.

[0436] In step G02b, the first layer 131 and the third layer 133 can be batch wet etched using photosensitive pattern 241, allowing the removal of the first layer 131 and the third layer 133 from the green sub-pixel SPg. In this case, the first layer 131 can be etched faster than the third layer 133, thereby forming a first protrusion 130-1 with a second connection structure 172, in which the side of the first layer 131 is recessed inward from the side of the second layer 132 or the third layer 133. In the figure, the side of the third layer 133 has a shape that is further recessed inward than the side of the second layer 132, but is not limited thereto.

[0437] In step G03, the photosensitive pattern 241 can be removed.

[0438] Subsequently, green organic light-emitting elements can be formed in the green sub-pixel SPg.

[0439] Figure 25 An organic light-emitting display device manufactured using the third JIT process technology is shown.

[0440] like Figure 25 As shown, the width W2 of the aperture region in an organic light-emitting display device manufactured using the third JIT process technology can be smaller than that manufactured using the second JIT process technology. Figure 22M The width W1 of the aperture region in the organic light-emitting display device manufactured by [the manufacturer].

[0441] As described above, when using the second JIT process technology, as the width of the first septum 111-1 or the second septum 111-2 formed by removing the inorganic film 111a decreases, the width W1 of the aperture region of the green sub-pixel SPg or the blue sub-pixel SPb can be increased.

[0442] Therefore, it can be seen that the second JIT process technology is more advantageous than the third JIT process technology in terms of increasing the width of the aperture region.

Claims

1. A method for manufacturing an organic light-emitting display device, comprising: An anode electrode is formed in each of the red, green, and blue sub-pixels on the substrate; A first barrier is formed between the red sub-pixel and the green sub-pixel, and a second barrier is formed between the green sub-pixel and the blue sub-pixel; A first protrusion and a second protrusion are formed on the first dike and the second dike, respectively; A first connection structure is formed on the first side of the first protrusion adjacent to the red sub-pixel, and a first organic light-emitting element is formed on the red sub-pixel using a first photolithography process; A second connection structure is formed on the second side of the first protrusion adjacent to the green sub-pixel and on the first side of the second protrusion, and a second organic light-emitting element is formed on the green sub-pixel using a second photolithography process; as well as A third connection structure is formed on the second side of the second protrusion adjacent to the blue sub-pixel, and a third organic light-emitting element is formed in the blue sub-pixel using a third photolithography process. Each of the first to the third organic light-emitting elements includes an anode electrode, an organic light-emitting layer including a hole injection layer, and a cathode electrode. Each of the first to the third connection structures includes an auxiliary electrode electrically connected to the cathode electrode, the cathode electrode being in contact with the end of the hole injection layer. The formation of the first dike and the second dike includes: An opening structure is formed, the opening structure being configured to isolate the cavitation injection layer in the first dike and the second dike, respectively.

2. The method according to claim 1, wherein forming the opening structure comprises: A barrier layer is formed, which is recessed inward from the first and second sides of the first dike and the first and second sides of the second dike, respectively.

3. The method according to claim 1, wherein the formation of the first organic light-emitting element comprises: A first organic light-emitting layer, including a first hole injection layer, and a first cathode electrode are deposited and patterned on the substrate to form the first organic light-emitting layer and the first cathode electrode on the red sub-pixel and the first barrier. The first cathode electrode is in contact with the end of the first hole injection layer and the auxiliary electrode of the first connection structure.

4. The method of claim 3, wherein the first organic light-emitting layer is configured to be isolated corresponding to a first opening structure formed on the first side of the first dike.

5. The method according to claim 3, wherein, The formation of the second organic light-emitting element includes: A second organic light-emitting layer, including a second hole injection layer, and a second cathode electrode are deposited and patterned on the substrate to form the second organic light-emitting layer and the second cathode electrode on the green sub-pixel, the first barrier, and the second barrier. The second cathode electrode is in contact with the end of the second hole injection layer and the auxiliary electrode of the second connection structure.

6. The method of claim 5, wherein the second organic light-emitting layer is configured to be isolated corresponding to a second opening structure formed on the second side of the first partition and the first side of the second partition.

7. The method according to claim 5, wherein, The formation of the third organic light-emitting element includes: A third organic light-emitting layer, including a third hole injection layer, and a third cathode electrode are deposited and patterned on a substrate to form the third organic light-emitting layer and the third cathode electrode on the blue sub-pixel and the second barrier. The third cathode electrode is in contact with the end of the third hole injection layer and the auxiliary electrode of the third connection structure.

8. The method of claim 7, wherein the third organic light-emitting layer is configured to be isolated corresponding to a third opening structure formed on the second side of the second partition.

9. The method of claim 1, wherein the formation of the cathode electrode comprises: A first conductive layer is formed, the first conductive layer being configured to be electrically connected to the auxiliary electrode, and The first conductive layer comprises a Mg:Ag alloy.

10. The method of claim 1, wherein the formation of the cathode electrode comprises: Form the first conductive layer; as well as A second conductive layer is formed on the first conductive layer to electrically connect the auxiliary electrode. The first conductive layer comprises a Mg:Ag alloy, and The second conductive layer comprises a transparent conductive oxide material.

11. The method according to claim 1, further comprising: A first color filter layer to a third color filter layer are formed on the first organic light-emitting element to the third organic light-emitting element.

12. The method according to claim 1, further comprising: An encapsulation layer is formed on the first organic light-emitting element, the second organic light-emitting element, and the third organic light-emitting element.

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