A mask with an isolation layer

Abstract

This invention relates to the field of photomask technology, and in particular to a photomask with an isolation layer. The photomask includes a base layer, a pattern layer on top of the base layer, and an isolation layer on top of the pattern layer. The isolation layer includes a silicon nitride film layer, a diamond carbon film layer bonded to the top of the silicon nitride film layer, and a silicon oxide reflective film layer bonded to the top of the diamond carbon film layer. This invention significantly improves the corrosion resistance and high-temperature resistance of the photomask, providing more comprehensive and reliable protection for the pattern layer. It effectively resists various corrosive factors in the process environment, extends the service life of the photomask, and reduces production costs. By setting the silicon oxide reflective film layer, it can achieve efficient anti-reflection for light within the wavelength range of the photolithography light source, greatly reducing reflection loss and interference during light transmission, allowing the pattern to be transferred more accurately onto the base layer, meeting the requirements of high-precision photolithography processes.

Description

Technical Field

[0001] This utility model relates to the field of photomask technology, specifically a photomask with an isolation layer. Background Technology

[0002] Photomasks are key components in microelectronics manufacturing and photolithography processes. They function similarly to "templates" or "stencils" to precisely transfer designed patterns onto substrates during the manufacturing processes of semiconductors, flat panel displays, circuit boards, and more.

[0003] According to the announcement number CN220232232U, the name is a mask with an isolation layer, which includes a glass substrate, a light-shielding layer and an isolation layer. Through research and analysis, it was found that although it reduces the amount of residual drug on the surface of the mask, thereby reducing the impact of photochemical reactions when used downstream, it still has the following disadvantages to a certain extent.

[0004] For example, the above-mentioned photomask has poor protective performance. It is protected by a single isolation method. In the face of increasingly complex and harsh process environments, it cannot fully protect the pattern on the photomask from various factors. The pattern transfer accuracy in the photolithography process is low, which in turn affects the product quality. In order to solve the above technical problems, it is necessary to design a photomask with an isolation layer. Utility Model Content

[0005] The purpose of this invention is to provide a photomask with an isolation layer, which has the advantages of strong corrosion resistance, high pattern transfer accuracy, and improved finished product quality. It solves the problems of poor protective performance of the above-mentioned photomasks, which cannot fully protect the patterns on the photomask from erosion by various factors, resulting in low pattern transfer accuracy during the photolithography process, and thus affecting product quality.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a mask with an isolation layer, comprising a base layer, a pattern layer disposed on top of the base layer, an isolation layer disposed on top of the pattern layer, the isolation layer comprising a silicon nitride film layer, a diamond carbon film layer bonded to the top of the silicon nitride film layer, and a silicon oxide reflective film layer bonded to the top of the diamond carbon film layer.

[0007] Preferably, the silicon nitride film layer is made of silicon nitride, the diamond carbon film layer is made of diamond carbon, and the silicon oxide reflective layer is made of silicon oxide.

[0008] Preferably, the surface of the graphic layer is provided with a light-shielding area, and the surface of the light-shielding area is provided with a light-transmitting hole.

[0009] Preferably, a photosensitive adhesive layer is disposed between the base layer and the graphic layer, the bottom of the photosensitive adhesive layer is bonded to the base layer, and the top of the photosensitive adhesive layer is bonded to the graphic layer.

[0010] Preferably, the material of the pattern layer is a metal transparent film, the material of the base layer is a quartz glass substrate, and the material of the photosensitive adhesive layer is photosensitive adhesive.

[0011] Preferably, an antistatic layer is fixedly connected to the bottom of the base layer, and the antistatic layer is made of indium tin oxide film.

[0012] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0013] 1. This invention significantly improves the corrosion resistance and high-temperature resistance of the photomask by setting a silicon nitride film layer and a diamond carbon film layer. It can provide more comprehensive and reliable protection for the pattern layer, effectively resist various corrosive factors in the process environment, extend the service life of the photomask, and reduce production costs. By setting a silicon oxide film reflective layer, it can achieve efficient anti-reflection for light within the wavelength range of the photolithography light source, greatly reducing reflection loss and interference during light transmission. This allows the pattern to be transferred to the substrate more accurately, meeting the needs of high-precision photolithography processes and helping to improve the quality and performance of electronic products.

[0014] 2. The photomask of this invention has been significantly improved in terms of optical performance, mechanical performance and chemical stability. It not only ensures the stability and reliability in the photolithography process, but also provides a wider range of applications for the photomask under different process conditions, thus meeting the ever-evolving needs of the electronics manufacturing industry. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of this utility model;

[0016] Figure 2 This is a cross-sectional schematic diagram of the silicon nitride film and the diamond carbon film of this utility model;

[0017] Figure 3 This is a cross-sectional schematic diagram of the graphic layer and the light-shielding area of ​​this utility model;

[0018] Figure 4 This is a cross-sectional schematic diagram of the antistatic layer and the isolation layer of this utility model.

[0019] In the diagram: 1. Base layer; 2. Pattern layer; 3. Light-shielding area; 4. Light-transmitting hole; 5. Photosensitive adhesive layer; 6. Antistatic layer; 7. Isolation layer; 70. Silicon nitride film layer; 71. Diamond carbon film layer; 72. Silicon oxide reflective film layer. Detailed Implementation

[0020] Please see Figures 1-4A photomask with an isolation layer includes a base layer 1, a pattern layer 2 on top of the base layer 1, and an isolation layer 7 on top of the pattern layer 2. The isolation layer 7 includes a silicon nitride film layer 70, a diamond carbon film layer 71 bonded to the top of the silicon nitride film layer 70, and a silicon oxide reflective film layer 72 bonded to the top of the diamond carbon film layer 71. By setting the silicon nitride film layer 70 and the diamond carbon film layer 71, the corrosion resistance and high temperature resistance of the photomask are greatly improved, providing more comprehensive and reliable protection for the pattern layer 2, effectively resisting various corrosive factors in the process environment, extending the service life of the photomask, and reducing production costs. By setting the silicon oxide reflective film layer 72, efficient anti-reflection can be achieved for light within the wavelength range of the photolithography light source, greatly reducing reflection loss and interference during light transmission, enabling the pattern to be transferred more accurately onto the base layer 1, meeting the needs of high-precision photolithography processes, and helping to improve the quality and performance of electronic products.

[0021] Please see Figure 2 The silicon nitride film layer 70 is made of silicon nitride, the diamond carbon film layer 71 is made of diamond carbon, and the silicon oxide reflective layer 72 is made of silicon oxide. The corrosion resistance and high temperature resistance of the silicon nitride film provide a reliable protective foundation for the pattern layer 2. The diamond carbon film further enhances the protective capability of the isolation layer 7. Its high hardness and chemical stability can effectively prevent external factors from damaging the pattern layer 2. The silicon oxide film achieves efficient anti-reflection with its good optical properties. The three materials work together to ensure the excellent performance of the mask in terms of protection and optical performance.

[0022] Please see Figure 3 The surface of the pattern layer 2 is provided with a light-shielding area 3, and the surface of the light-shielding area 3 is provided with a light-transmitting hole 4. By setting the light-shielding area 3 and the light-transmitting hole 4, the photomask can precisely control the light transmission during the photolithography process. The light-shielding area 3 can block unwanted light, while the light-transmitting hole 4 allows light at specific positions to pass through, thereby achieving precise transfer of the pattern, improving the accuracy and clarity of the photolithography pattern, and helping to produce higher quality electronic products.

[0023] Please see Figure 1 A photosensitive adhesive layer 5 is disposed between the base layer 1 and the pattern layer 2. The bottom of the photosensitive adhesive layer 5 is bonded to the base layer 1, and the top of the photosensitive adhesive layer 5 is bonded to the pattern layer 2. The photosensitive adhesive has good adhesion and photosensitive properties, which can firmly bond the base layer 1 and the pattern layer 2 together, ensuring the stability of the mask structure during the photolithography process. The photosensitive properties of the photosensitive adhesive enable it to react with light in the photolithography process, which helps to accurately control the pattern transfer process and improves the efficiency and quality of photolithography.

[0024] Please see Figure 1The material of pattern layer 2 is a metal transparent film, the material of base layer 1 is a quartz glass substrate, and the material of photosensitive adhesive layer 5 is photosensitive adhesive. The metal transparent film can achieve good light transmission and light blocking effects, meeting the requirements of pattern definition. The quartz glass substrate has advantages such as high light transmittance and low coefficient of thermal expansion, which can ensure optical performance and dimensional stability during photolithography. The photosensitive adhesive provides reliable adhesion. The three work together to make the photomask perform well in the photolithography process, improving product quality and production efficiency.

[0025] Please see Figures 1-4 An antistatic layer 6, made of indium tin oxide (ITO) film, is fixedly connected to the bottom of the base layer 1. ITO film has excellent conductivity and light transmittance. During the use of the photomask, static electricity accumulation may lead to dust adsorption, electrical damage, and other problems, affecting the performance and lifespan of the photomask. The antistatic layer 6 effectively conducts away static electricity, preventing damage to the photomask. Simultaneously, its light transmittance does not negatively affect the optical performance of the photomask, ensuring stable operation of the photomask in high-precision photolithography processes.

[0026] During use, when light shines on the pattern layer 2 during photolithography, the light-shielding area 3 blocks the light from passing through, while the light-transmitting hole 4 allows the light to pass through according to the preset pattern shape. This transforms the designed pattern information into a light transmission mode, laying the foundation for the subsequent transfer of the pattern onto the substrate. The silicon nitride film has excellent corrosion resistance and high temperature resistance, and can remain stable under chemical corrosion environment and high temperature process conditions, providing the first protective barrier for the pattern layer 2. The diamond carbon film has high hardness, high wear resistance and good chemical stability, further enhancing the protective ability of the isolation layer 7, effectively resisting physical wear, chemical erosion and other factors in the process environment, protecting the pattern layer 2 from damage, and ensuring the integrity and accuracy of the pattern. When light shines on the mask, the silicon oxide film reflective layer 72 can reduce the reflection loss and interference of light on the mask surface, allowing more light to pass through the light-transmitting hole 4 according to the predetermined path and be accurately projected onto the substrate 1, thereby improving the accuracy of the pattern transfer onto the substrate 1.

[0027] In summary, this mask with an isolation layer, through the silicon nitride film layer 70, diamond carbon film layer 71, and silicon oxide reflective film layer 72, solves the problems of poor protective performance of the aforementioned masks, which cannot fully protect the patterns on the mask from erosion by various factors, resulting in low pattern transfer accuracy during the photolithography process and thus affecting product quality.

Claims

1. A mask with an isolation layer, comprising a base layer (1), characterized in that: A patterned layer (2) is provided on the top of the base layer (1), and an isolation layer (7) is provided on the top of the patterned layer (2). The isolation layer (7) includes a silicon nitride film layer (70), a diamond carbon film layer (71) is bonded to the top of the silicon nitride film layer (70), and a silicon oxide film reflective layer (72) is bonded to the top of the diamond carbon film layer (71).

2. The mask with an isolation layer according to claim 1, characterized in that: The silicon nitride film layer (70) is made of silicon nitride, the diamond carbon film layer (71) is made of diamond carbon, and the silicon oxide reflective layer (72) is made of silicon oxide.

3. A photomask with an isolation layer according to claim 1, characterized in that: The surface of the graphic layer (2) is provided with a light-shielding area (3), and the surface of the light-shielding area (3) is provided with a light-transmitting hole (4).

4. A photomask with an isolation layer according to claim 1, characterized in that: A photosensitive adhesive layer (5) is provided between the base layer (1) and the graphic layer (2). The bottom of the photosensitive adhesive layer (5) is bonded to the base layer (1), and the top of the photosensitive adhesive layer (5) is bonded to the graphic layer (2).

5. A mask with an isolation layer according to claim 4, characterized in that: The material of the pattern layer (2) is a metal transparent film, the material of the base layer (1) is a quartz glass substrate, and the material of the photosensitive adhesive layer (5) is photosensitive adhesive.

6. A photomask with an isolation layer according to claim 1, characterized in that: An antistatic layer (6) is fixedly connected to the bottom of the base layer (1), and the antistatic layer (6) is made of indium tin oxide film.

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