Substrate for manufacturing wide bandgap bidirectional switch and method of manufacturing the same

By transferring SiC and GaN seed layers onto a carrier substrate and epitaxially growing a drift layer, the problem of the characteristic difference of SiC bidirectional switches on Si-type and C-type surfaces was solved, realizing a bidirectional switch of vertical back-to-back connected transistors with smaller area and lower resistance.

CN122162535APending Publication Date: 2026-06-05SOITEC SA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SOITEC SA
Filing Date
2024-10-30
Publication Date
2026-06-05

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Abstract

The invention proposes a substrate for manufacturing a bidirectional switch and a method for manufacturing the same. The method comprises: - transferring a first seed layer (21) made of a wide bandgap polar semiconductor material onto a front face of a carrier substrate; - transferring a second seed layer (22) made of a wide bandgap polar semiconductor material onto a back face of the carrier substrate, wherein the transfers are performed so as to expose a first-type surface (F1) of the first seed layer (21) and a first-type surface (F1) of the second seed layer (22), and wherein a second-type surface (F2) of the first seed layer (21) and a second-type surface (F2) of the second seed layer (22) are respectively located at the interface with the front face and the back face of the carrier substrate.
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