Wafer edge trimming automation control method, system, apparatus, and medium

Abstract

This application relates to an automated control method, system, device, and medium for wafer trimming. The method includes: acquiring a preset work order; calculating initial trimming time information and corresponding target parameter thresholds based on initial wafer parameters and processing parameters, and using the initial trimming time information as a reference time for subsequent trimming control; controlling a trimming machine to trim the first wafer to be processed according to the initial trimming time information, and recording the trimming time; performing pressure testing on the processed wafer to acquire and store the current wafer parameters; determining the control interval of the processed wafer based on the difference range between the current wafer parameters and the target parameter threshold, and adjusting the initial trimming time in segments according to the control interval to obtain the trimming time for subsequent wafers to be processed; and controlling the trimming machine to trim the subsequent wafers to be processed according to the trimming time of the subsequent wafers to be processed. This application has the effect of improving the accuracy of quartz wafer processing.

Description

Technical Field

[0001] This application relates to the technical field of quartz wafer processing, and in particular to an automated control method, system, equipment and medium for wafer trimming. Background Technology

[0002] Currently, in the wafer processing, the edge trimming process is a key step that affects the dimensional accuracy and edge quality of the wafer. The trimming time usually needs to be controlled according to the initial parameters of the wafer and the process requirements in order to achieve the target thickness or size indicators.

[0003] Existing wafer trimming control methods mostly rely on preset fixed parameters or human experience to set the trimming time. In actual processing, they are often simply adjusted based on the results of a single processing run, lacking a dynamic feedback control mechanism for wafer processing deviations, and also lacking the ability to comprehensively adjust the overall fluctuation trend during the processing of multiple wafers.

[0004] The existing technical solutions mentioned above have the following drawbacks: the existing wafer trimming control methods cannot adaptively adjust the trimming time according to the actual wafer processing results, resulting in unstable processing accuracy, and therefore there is room for improvement. Summary of the Invention

[0005] To improve the precision of quartz wafer processing, this application provides an automated control method, system, device, and medium for wafer trimming.

[0006] The above-mentioned objective of this application is achieved through the following technical solution:

[0007] An automated control method for wafer trimming, the automated control method for wafer trimming includes:

[0008] Obtain a preset work order, which includes the initial parameters of the wafer to be processed and the processing parameters;

[0009] The initial grinding time information and the corresponding target parameter threshold are calculated based on the initial parameters and processing parameters of the wafer, and the initial grinding time information is used as the reference time for subsequent grinding control.

[0010] The edge trimming machine is controlled to perform edge trimming on the first wafer to be processed based on the initial edge trimming time information, and the edge trimming time is recorded.

[0011] Perform stress testing on the processed wafer to obtain the current wafer parameters and store the current wafer parameters;

[0012] Based on the difference range between the current wafer parameters and the target parameter threshold, the control interval of the processed wafer is determined, and the initial grinding time is adjusted in segments according to the control interval to obtain the grinding time of the wafer to be processed later.

[0013] The trimming machine is controlled to perform trimming processing on the subsequent wafers according to the trimming time of the wafers to be processed.

[0014] By adopting the above technical solution, and by acquiring a preset work order, which includes the initial parameters and processing parameters of the wafer to be processed, a unified parameter input basis can be provided for the wafer trimming process. This ensures that subsequent trimming control is based on clear process objectives and the initial state of the wafer, thereby reducing parameter setting deviations caused by manual experience judgment and improving the standardization and consistency of trimming control. By calculating the initial trimming time information and the corresponding target parameter threshold based on the initial parameters and processing parameters, and using the initial trimming time information as the reference time for subsequent trimming control, the initial state of the wafer and the target processing requirements can be transformed into an executable trimming control benchmark. This gives the trimming processing of the first wafer a clear time basis, improving the targeting and feasibility of the first round of processing. By controlling the trimming machine to perform trimming processing on the first wafer to be processed according to the initial trimming time information, the trimming process can be completed. The system records the grinding time, enabling the benchmark processing of the first wafer and simultaneously acquiring actual processing time information. This provides a reference basis for subsequent wafer time adjustment and batch processing analysis, enhancing the continuity of subsequent control. By performing stress testing on the processed wafers, the current wafer parameters are obtained, and a control interval is determined based on the difference range between the current wafer parameters and the target parameter threshold. The initial grinding time is then adjusted in segments according to the control interval to obtain the grinding time of subsequent wafers. The edge trimming machine is then controlled to perform grinding processing on the subsequent wafers based on the grinding time of the subsequent wafers. This allows for dynamic correction of the grinding parameters of subsequent wafers based on the actual processing results of the processed wafers, achieving feedforward continuous optimization control across wafers. This improves wafer edge trimming accuracy, reduces subsequent wafer processing deviations, and enhances the consistency and stability of batch processing.

[0015] In one example, this application can be further configured to: obtain a preset work order, wherein the work order includes the initial parameters of the wafer to be processed and the processing parameters, specifically including:

[0016] A preset work order is obtained from the production management system, and the work order is parsed to extract the initial wafer parameters and processing parameters in the work order. The initial wafer parameters include at least one of initial thickness parameters, edge size parameters, or material property parameters, and the processing parameters include at least one of target processing thickness, grinding accuracy requirements, or grinding process control parameters.

[0017] By adopting the above technical solution, preset work orders are obtained from the production management system, and the work orders are parsed to extract the initial wafer parameters and processing parameters. The initial wafer parameters include at least one of initial thickness parameters, edge size parameters, or material property parameters, and the processing parameters include at least one of target processing thickness, grinding accuracy requirements, or grinding process control parameters. This can transform the process requirements of the production management system into structured parameter data that can be directly called by the edge trimming control, thereby improving the connection efficiency between work order information and equipment control logic, avoiding control errors caused by scattered parameter sources or inconsistent manual input, and further enhancing the data integrity and automated control capabilities of the wafer edge trimming process.

[0018] In one example, this application can be further configured as follows: calculating the initial grinding time information and the corresponding target parameter threshold based on the initial wafer parameters and processing parameters, and using the initial grinding time information as the reference time for subsequent grinding control, specifically includes:

[0019] Calculate the target grinding amount based on the initial wafer parameters and the processing parameters;

[0020] Based on the preset mapping relationship between grinding amount and grinding time, the target grinding amount is converted into initial grinding time information;

[0021] The target parameter threshold range is set according to the processing parameters.

[0022] By adopting the above technical solution, and calculating the target grinding amount based on the initial wafer parameters and the processing parameters, the amount of processing required to remove from the wafer to reach the target processing state from the initial state can be clearly defined. This provides a quantitative basis for determining the initial grinding time, avoiding coarse control caused by relying solely on experience estimation. By converting the target grinding amount into initial grinding time information based on a preset mapping relationship between grinding amount and grinding time, the abstract process target can be transformed into a time control parameter that the trimming machine can directly execute, thereby improving the operability and execution accuracy of the first wafer grinding control. By setting the target parameter threshold range based on the processing parameters, a clear judgment boundary can be provided for whether the stress test results meet the standard, thus providing a unified judgment standard for subsequent control interval matching and grinding time adjustment, further improving the accuracy and stability of the dynamic adjustment process.

[0023] In one example, this application can be further configured as follows: determining the control interval of the processed wafer based on the difference range between the current wafer parameters and the target parameter threshold, and adjusting the initial grinding time in segments according to the control interval to obtain the grinding time of the subsequent wafers to be processed, specifically including:

[0024] Calculate the parameter difference between the current wafer parameters and the target parameter threshold;

[0025] Match the corresponding control interval based on the parameter difference;

[0026] Invoke the grinding time adjustment strategy corresponding to the control range;

[0027] The initial grinding time is adjusted based on the grinding time adjustment strategy to obtain the grinding time for subsequent wafers to be processed.

[0028] By employing the above technical solution, and by calculating the parameter difference between the current wafer parameters and the target parameter threshold, the deviation between the processed wafer and the target processing state can be quantified, thus providing an objective numerical basis for subsequent segmented control and avoiding adjustments based solely on rough experience. By matching the corresponding control interval according to the parameter difference, continuously changing processing deviations can be categorized into predetermined control levels, thereby providing clear hierarchical basis for subsequent control under different deviation levels and enhancing the pertinence of the control logic. By invoking the grinding time adjustment strategy corresponding to the control interval, an appropriate grinding time adjustment method can be selected for different deviation levels, thus avoiding over-grinding or under-adjustment problems caused by using a single adjustment method. By adjusting the initial grinding time based on the grinding time adjustment strategy, the grinding time of the subsequent wafer to be processed can be obtained, effectively transmitting the detection results of the processed wafer to the processing control of the subsequent wafer, realizing segmented optimization of the trimming time, thereby improving the processing accuracy of the subsequent wafer and enhancing the convergence of the continuous processing process.

[0029] In one example, this application can be further configured such that the automated control method for wafer trimming also includes:

[0030] A preset range of wafer parameter differences is set, and multiple control intervals are divided according to the range of wafer parameter differences. The control intervals include the interval far from the target, the interval close to the target, and the critical control interval.

[0031] A first grinding time strategy is set for the distance from the target range, a second grinding time strategy is set for the distance from the target range, and a third grinding time strategy is set for the critical control range, wherein the first grinding time is greater than the second grinding time, and the second grinding time is greater than the third grinding time.

[0032] By adopting the above technical solution, and by pre-setting the wafer parameter difference range, and dividing the wafer parameter difference range into multiple control intervals, including the far-from-target interval, the near-target interval, and the critical control interval, a correspondence rule between the difference and the control level can be established in advance. This allows the processing deviation to have a clear distinction standard before entering the adjustment stage, thereby improving the efficiency and stability of subsequent interval matching and control strategy invocation. By setting a first grinding time strategy for the far-from-target interval, a second grinding time strategy for the near-target interval, and a third grinding time strategy for the critical control interval, wherein the first grinding time is greater than the second grinding time, and the second grinding time is greater than the third grinding time, the grinding time can gradually converge as the degree of deviation decreases. This achieves layered control from large adjustment to fine adjustment, thereby ensuring grinding efficiency when far from the target state and reducing the risk of over-repair when close to the target state, further improving the precision and processing stability of wafer trimming.

[0033] In one example, this application can be further configured such that the automated control method for wafer trimming also includes:

[0034] Calculate the actual grinding amount of the processed wafer based on the initial wafer parameters and the current wafer parameters;

[0035] The grinding amount deviation is determined based on the difference between the actual grinding amount and the target grinding amount;

[0036] The grinding time of the subsequent wafers to be processed is compensated and adjusted according to the grinding deviation.

[0037] By adopting the above technical solution, the actual grinding amount of the processed wafer can be calculated based on the initial wafer parameters and the current wafer parameters. This allows for the acquisition of the true removal amount corresponding to a single wafer during actual processing, thereby expanding the trimming control from simple time control to a direct representation of the processing effect and improving the perception of the grinding process. By determining the grinding amount deviation based on the difference between the actual grinding amount and the target grinding amount, the deviation between the current actual processing effect and the theoretical target can be identified, providing a basis for the fine correction of subsequent wafers and avoiding rough adjustments based solely on parameter differences. By compensating and adjusting the grinding time of subsequent wafers based on the grinding amount deviation, a processing amount feedback compensation mechanism can be further introduced on the basis of existing segmented control, making the grinding time of subsequent wafers more closely match the actual processing state, thereby improving the accuracy of the subsequent wafer trimming time setting and reducing the cumulative error in continuous processing.

[0038] In one example, this application can be further configured such that the automated control method for wafer trimming also includes:

[0039] A batch processing dataset is constructed based on the current wafer parameters and corresponding grinding times of multiple processed wafers.

[0040] Statistical analysis was performed on the batch processing dataset to obtain the overall trend of grinding deviation.

[0041] Based on the overall trend of change, the grinding time of the subsequent wafers to be processed is adjusted in batches to compensate for the changes.

[0042] By adopting the above technical solution, a batch processing dataset is constructed based on the current wafer parameters and corresponding grinding times of multiple processed wafers. This expands the single-wafer processing results into a continuous data foundation at the batch level, thereby supporting the identification of common deviations and overall fluctuations in the processing of multiple wafers and enhancing the system's overall perception of the batch processing status. By statistically analyzing the batch processing dataset, the overall trend of grinding deviations can be obtained, and the direction and pattern of deviation changes can be extracted from the processing results of multiple wafers, thereby identifying possible systematic drifts or batch fluctuations during continuous processing. By adjusting the grinding time of subsequent wafers to be processed according to the overall trend, a batch-level correction mechanism can be introduced in addition to single-wafer adjustments. This allows the grinding control of subsequent wafers to not only respond to single-wafer results but also compensate for systematic errors caused by the overall processing trend, thereby improving the consistency of wafer trimming results within a batch and reducing batch processing fluctuations.

[0043] The second objective of this invention is achieved through the following technical solution:

[0044] An automated control system for wafer trimming, comprising:

[0045] The work order acquisition module is used to acquire preset work orders, which include the initial parameters and processing parameters of the wafer to be processed.

[0046] The initial parameter calculation module is used to calculate the initial grinding time information and the corresponding target parameter threshold based on the initial parameters and processing parameters of the wafer, and to use the initial grinding time information as the reference time for subsequent grinding control.

[0047] The first wafer finishing control module is used to control the edge trimming machine to finish the first wafer to be processed according to the initial finishing time information, and to record the finishing time.

[0048] The parameter detection module is used to perform stress testing on the processed wafer, obtain the current wafer parameters, and store the current wafer parameters;

[0049] The interval determination and time adjustment module is used to determine the control interval of the processed wafer based on the difference range between the current wafer parameters and the target parameter threshold, and to adjust the initial grinding time in segments according to the control interval to obtain the grinding time of the wafer to be processed later.

[0050] The subsequent grinding control module is used to control the trimming machine to perform grinding processing on the subsequent wafers according to the grinding time of the wafers to be processed.

[0051] By adopting the above technical solution, and by acquiring a preset work order, which includes the initial parameters and processing parameters of the wafer to be processed, a unified parameter input basis can be provided for the wafer trimming process. This ensures that subsequent trimming control is based on clear process objectives and the initial state of the wafer, thereby reducing parameter setting deviations caused by manual experience judgment and improving the standardization and consistency of trimming control. By calculating the initial trimming time information and the corresponding target parameter threshold based on the initial parameters and processing parameters, and using the initial trimming time information as the reference time for subsequent trimming control, the initial state of the wafer and the target processing requirements can be transformed into an executable trimming control benchmark. This gives the trimming processing of the first wafer a clear time basis, improving the targeting and feasibility of the first round of processing. By controlling the trimming machine to perform trimming processing on the first wafer to be processed according to the initial trimming time information, the trimming process can be completed. The system records the grinding time, enabling the benchmark processing of the first wafer and simultaneously acquiring actual processing time information. This provides a reference basis for subsequent wafer time adjustment and batch processing analysis, enhancing the continuity of subsequent control. By performing stress testing on the processed wafers, the current wafer parameters are obtained, and a control interval is determined based on the difference range between the current wafer parameters and the target parameter threshold. The initial grinding time is then adjusted in segments according to the control interval to obtain the grinding time of subsequent wafers. The edge trimming machine is then controlled to perform grinding processing on the subsequent wafers based on the grinding time of the subsequent wafers. This allows for dynamic correction of the grinding parameters of subsequent wafers based on the actual processing results of the processed wafers, achieving feedforward continuous optimization control across wafers. This improves wafer edge trimming accuracy, reduces subsequent wafer processing deviations, and enhances the consistency and stability of batch processing.

[0052] The above-mentioned objective three of this application is achieved through the following technical solution:

[0053] A computer device includes a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the aforementioned automated control method for wafer trimming.

[0054] The fourth objective of this application is achieved through the following technical solution:

[0055] A computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the aforementioned automated control method for wafer trimming.

[0056] In summary, this application includes the following beneficial technical effects:

[0057] 1. By acquiring a preset work order, which includes the initial parameters and processing parameters of the wafer to be processed, a unified parameter input basis can be provided for the wafer trimming process. This ensures that subsequent trimming control is based on clear process objectives and the initial state of the wafer, thereby reducing parameter setting deviations caused by manual experience judgment and improving the standardization and consistency of trimming control. By calculating the initial trimming time information and the corresponding target parameter threshold based on the initial wafer parameters and processing parameters, and using the initial trimming time information as the reference time for subsequent trimming control, the initial state of the wafer and the target processing requirements can be transformed into an executable trimming control benchmark. This provides a clear time basis for the trimming of the first wafer, improving the targeting and feasibility of the first round of processing. By controlling the trimming machine to trim the first wafer to be processed according to the initial trimming time information and recording the trimming time, the benchmark processing of the first wafer can be completed and the actual processing time information can be obtained simultaneously. This provides a reference basis for subsequent wafer time adjustment and batch processing analysis, enhancing the continuity of subsequent control.

[0058] 2. By performing pressure testing on the processed wafers to obtain the current wafer parameters, and determining the control interval based on the difference range between the current wafer parameters and the target parameter threshold, the initial grinding time is then adjusted in segments according to the control interval to obtain the grinding time for subsequent wafers to be processed. The edge trimming machine is then controlled to perform grinding processing on the subsequent wafers based on the grinding time of the subsequent wafers to be processed. This allows for dynamic correction of the grinding parameters of subsequent wafers based on the actual processing results of the processed wafers, realizing feedforward continuous optimization control across wafers, thereby improving wafer edge trimming accuracy, reducing subsequent wafer processing deviations, and enhancing the consistency and stability of batch processing. Attached Figure Description

[0059] Figure 1 This is a flowchart of an automated control method for wafer trimming according to an embodiment of this application;

[0060] Figure 2 This is a schematic block diagram of an automated control system for wafer trimming according to one embodiment of this application;

[0061] Figure 3 This is a schematic diagram of a device according to one embodiment of this application. Detailed Implementation

[0062] The present application will be further described in detail below with reference to the accompanying drawings.

[0063] In one embodiment, such as Figure 1 As shown, this application discloses an automated control method for wafer trimming, which specifically includes the following steps:

[0064] S10: Obtain a preset work order, which includes the initial parameters and processing parameters of the wafer to be processed.

[0065] Specifically, the system reads the preset work order information issued in the production scheduling platform, parses and processes the work order data to extract basic data fields related to wafer processing. The initial wafer parameters include information such as the initial thickness, edge size, or material properties of the wafer. At the same time, the corresponding processing parameters, such as the target thickness or processing accuracy requirements, are obtained. The above data is structured and organized to form a unified data input format. For example, for a certain batch of wafers, the initial thickness is recorded as 500μm and the target thickness is 480μm, thereby providing a clear input basis for subsequent grinding control.

[0066] S20: Calculate the initial grinding time information and the corresponding target parameter threshold based on the initial parameters and processing parameters of the wafer, and use the initial grinding time information as the reference time for subsequent grinding control.

[0067] Specifically, the initial parameters and processing parameters of the acquired wafer are combined and calculated to transform the processing required for the wafer to reach the target state from the initial state into a time control quantity. The corresponding initial grinding time is determined by a preset empirical formula or processing rate relationship. At the same time, the allowable parameter fluctuation range is set as the target parameter threshold in combination with the processing accuracy requirements. For example, when the wafer thickness needs to be ground from 500μm to 480μm, the initial grinding time is calculated to be 10 seconds based on the grinding rate per unit time of the equipment, and the allowable deviation range of the target thickness is set to ±1μm, so that the subsequent processing process has a unified control benchmark.

[0068] S30: Control the edge trimming machine to perform edge trimming on the first wafer to be processed based on the initial edge trimming time information, and record the edge trimming time.

[0069] Specifically, the calculated initial grinding time is sent to the edge trimming equipment control interface to drive the grinding process, so that the first wafer is processed according to the preset time. During the processing, the actual grinding time and the start and end times of the processing are recorded simultaneously. For example, the actual grinding time of the first wafer is recorded as 10.2 seconds or 9.8 seconds, so that the processing process can be compared, analyzed and adjusted in the future, thereby forming the benchmark processing data of the first wafer.

[0070] S40: Perform stress testing on the processed wafer, obtain the current wafer parameters, and store the current wafer parameters.

[0071] Specifically, after the first wafer is polished, a testing device is used to perform pressure testing on it. The current thickness, edge size, or related performance parameters of the wafer are obtained by measurement, and the test results are collected and stored. For example, if the current thickness is measured to be 481μm or 479μm, the test data is recorded in the corresponding data storage unit to form a processing result record, thereby providing a data basis for subsequent judgment of processing deviations and adjustment strategies.

[0072] S50: Based on the difference range between the current wafer parameters and the target parameter threshold, determine the control range of the processed wafer, and adjust the initial grinding time in segments according to the control range to obtain the grinding time of the wafer to be processed later.

[0073] Specifically, the current wafer parameters are compared with the target parameter threshold to calculate the parameter difference. Based on the preset difference range, the control interval to which the difference belongs is determined. For example, when the current thickness is 481μm and the target thickness is 480μm, the difference is 1μm. Based on the magnitude of the difference, it is determined whether it is close to or far from the target interval. Then, according to the corresponding interval, the corresponding grinding time adjustment method is selected to correct the initial grinding time. For example, the grinding time is increased when the difference is large and decreased when the difference is small, thereby generating grinding time parameters suitable for the next wafer and realizing dynamic adjustment based on the actual processing results.

[0074] S60: Control the trimming machine to perform trimming processing on the subsequent wafers according to the trimming time of the wafers to be processed.

[0075] Specifically, the adjusted grinding time is input as a control command to the trimming equipment to execute the processing operation of subsequent wafers, so that each subsequent wafer is ground according to the updated time parameters. At the same time, the corresponding grinding time and processing results are continuously recorded during the processing. For example, the second wafer is processed using the adjusted grinding time of 9.6 seconds, so as to gradually approach the target processing state in the continuous processing, improve the processing accuracy of subsequent wafers and enhance the consistency of batch processing.

[0076] Furthermore, after completing the grinding process of the subsequent wafers, the processing results of each wafer are output and recorded. The corresponding grinding time, current wafer parameters, and processing status information are correlated and organized to generate grinding result data, which is used to characterize the final processing effect of a single wafer. For example, the target thickness, actual thickness, grinding time, and corresponding deviation value of each wafer are recorded. The grinding result data is stored in the processing record or output to the upper management interface for query and traceability, thereby realizing the visualization of the wafer grinding process results and the closed-loop management of the process.

[0077] In one embodiment, in step S10, a preset work order is obtained. The work order includes the initial parameters of the wafer to be processed and the processing parameters, specifically including:

[0078] S11: Obtain a preset work order from the production management system, parse the work order, and extract the initial wafer parameters and processing parameters from the work order. The initial wafer parameters include at least one of the initial thickness parameters, edge size parameters, or material property parameters, and the processing parameters include at least one of the target processing thickness, grinding accuracy requirements, or grinding process control parameters.

[0079] Specifically, the system calls the work order data interface in the production management platform to obtain the preset work order information for the corresponding batch. The work order data is parsed to extract parameter fields related to wafer processing. The text or structured data in the original work order is converted into a standard data format that can be used for subsequent calculations. Initial wafer parameters and processing parameters are extracted from the data. The initial wafer parameters include information such as the initial thickness, edge size, or material properties of the wafer. For example, the initial thickness of a batch of wafers is read as 500μm and the edge size is a specified specification. At the same time, processing parameters such as the target processing thickness of 480μm or the grinding accuracy requirement of ±1μm are extracted. The above parameters are organized and a corresponding relationship is established before outputting a unified data set, thereby providing a complete and consistent input data foundation for subsequent grinding control.

[0080] In one embodiment, step S20, which involves calculating initial grinding time information and corresponding target parameter thresholds based on initial wafer parameters and processing parameters, and using the initial grinding time information as the reference time for subsequent grinding control, specifically includes:

[0081] S21: Calculate the target grinding amount based on the initial parameters and processing parameters of the wafer.

[0082] Specifically, the difference between the acquired initial wafer parameters and processing parameters is calculated, and the difference between the current state of the wafer and the target processing state is converted into the amount of processing to be removed. The target grinding amount is obtained by comparing the initial thickness and the target thickness. For example, when the initial wafer thickness is 500μm and the target processing thickness is 480μm, the target grinding amount is calculated to be 20μm. The grinding amount is then appropriately modified in combination with the edge size or material properties to ensure the rationality of the processing, thereby obtaining the target grinding amount data for subsequent time conversion.

[0083] S22: Based on the preset mapping relationship between grinding amount and grinding time, the target grinding amount is converted into initial grinding time information.

[0084] Specifically, the pre-established correspondence model between grinding amount and grinding time is invoked, and the corresponding grinding time is found or calculated based on the target grinding amount. The processing quantity requirement is converted into time control parameters that the equipment can execute. For example, when the grinding rate per unit time is 2μm / s, the target grinding amount of 20μm is converted into an initial grinding time of 10 seconds. At the same time, the time is fine-tuned in combination with the equipment operating characteristics to adapt to the actual processing conditions, thereby generating the initial grinding time information for the processing of the first wafer.

[0085] S23: Set the target parameter threshold range based on the processing parameters.

[0086] Specifically, the allowable fluctuation range of the target processing result is set according to the accuracy requirements in the processing parameters. The target parameters are converted into upper and lower limits as subsequent detection and judgment criteria. For example, when the target thickness is 480μm and the grinding accuracy requirement is ±1μm, the target parameter threshold range is set to 479μm to 481μm. The processing result is judged to meet the requirements through this range, thereby providing a clear judgment basis for subsequent difference calculation and control interval division.

[0087] In one embodiment, in step S50, based on the difference range between the current wafer parameters and the target parameter threshold, the control range of the processed wafer is determined, and the initial grinding time is adjusted in segments according to the control range to obtain the grinding time of the subsequent wafers to be processed. Specifically, this includes:

[0088] S51: Calculate the parameter difference between the current wafer parameters and the target parameter threshold.

[0089] Specifically, the current wafer parameters obtained from the pressure test are compared and calculated with the pre-set target parameter threshold. The degree of processing deviation is characterized by the difference between the current parameter and the target value. Furthermore, the direction of deviation can be determined by combining the upper and lower limits of the threshold. For example, when the target thickness is 480μm and the allowable range is 479μm to 481μm, if the current thickness is detected to be 482μm, the parameter difference is calculated to be +2μm, indicating that the processing is insufficient and further grinding is required. Thus, the detection result is converted into quantitative difference information that can be used for control and judgment.

[0090] S52: Match the corresponding control interval based on the parameter difference.

[0091] Specifically, the calculated parameter difference is compared with a pre-set difference range. The control range corresponding to the current processing state is determined based on the magnitude of the difference and its range. For example, when the parameter difference is +2μm, it can be determined that it is far from the target range, while when the difference is +0.5μm, it can be determined that it is close to the target range. By mapping the continuously changing difference to a discrete range, different deviation levels correspond to clear control levels, thereby providing a basis for subsequent strategy invocation.

[0092] S53: Invoke the grinding time adjustment strategy corresponding to the control interval.

[0093] Specifically, based on the matched control interval, the corresponding grinding time adjustment method is selected from the preset strategy set. For example, when far from the target interval, a large adjustment strategy is called to increase the grinding time; when close to the target interval, a small adjustment strategy is called to fine-tune the grinding time; and when in the critical control interval, a fine control strategy is called to avoid over-grinding. Through the one-to-one correspondence between intervals and strategies, differentiated control under different processing states is achieved, thereby improving the pertinence and effectiveness of the adjustment.

[0094] S54: Adjust the initial grinding time based on the grinding time adjustment strategy to obtain the grinding time of the wafer to be processed later.

[0095] Specifically, the invoked grinding time adjustment strategy is applied to the initial grinding time, increasing or decreasing it to generate new grinding time parameters. For example, when the initial grinding time is 10 seconds and it is far from the target range, the grinding time can be increased to 11 seconds, while when it is close to the target range, the grinding time can be adjusted to 9.5 seconds. By dynamically correcting the time parameters, the subsequent processing of the wafer gradually approaches the target processing state, thereby improving the control accuracy and stability in the continuous processing process.

[0096] In one embodiment, the automated control method for wafer trimming further includes:

[0097] S71: Sets the preset range of chip parameter difference and divides it into multiple control intervals based on the range of chip parameter difference. The control intervals include the range far from the target, the range close to the target, and the critical control interval.

[0098] Specifically, based on the processing accuracy requirements and historical processing experience, the allowable deviation range of the wafer parameters is set. The difference between the current wafer parameters and the target parameters is divided into multiple intervals to represent different degrees of deviation. For example, the range with a difference greater than 1 μm is divided into the range far from the target, the range with a difference between 0.3 μm and 1 μm is divided into the range close to the target, and the range with a difference less than 0.3 μm is divided into the critical control interval. By defining the range of differences in segments, the continuously changing processing deviation has a clear grading standard, thereby providing a clear interval division basis for subsequent strategy calls.

[0099] S72: Set a first grinding time strategy for distance from the target range, a second grinding time strategy for distance from the target range, and a third grinding time strategy for the critical control range, wherein the first grinding time is greater than the second grinding time, and the second grinding time is greater than the third grinding time.

[0100] Specifically, a differentiated grinding time adjustment strategy is set according to the degree of deviation corresponding to different control intervals. When far from the target interval, a larger grinding time is set to quickly eliminate large deviations. When approaching the target interval, a medium grinding time is set to gradually approach it. When in the critical control interval, a smaller grinding time is set to achieve fine control and avoid over-grinding. For example, when far from the target interval, the grinding time is increased to 110% or 120% of the original time. When approaching the target interval, it is adjusted to 95% to 105% of the original time. When in the critical control interval, only a small adjustment is made. By ensuring that the first grinding time is greater than the second grinding time and the second grinding time is greater than the third grinding time, the grinding control process exhibits a step-by-step convergence characteristic from coarse to fine, thereby improving the processing accuracy of wafer trimming and reducing the risk of over-trimming.

[0101] In one embodiment, the automated control method for wafer trimming further includes:

[0102] S81: Calculate the actual grinding amount of the processed wafer based on the initial wafer parameters and the current wafer parameters.

[0103] Specifically, the initial wafer parameters recorded before processing are compared with the current wafer parameters obtained by pressure testing. The difference between the two is used to determine the actual amount of material removed, which reflects the actual grinding effect. For example, when the initial thickness is 500μm and the current thickness is 485μm, the actual grinding amount is calculated to be 15μm. In this way, the difference between the state before and after processing is transformed into a quantifiable grinding result for subsequent accuracy evaluation and control adjustment.

[0104] S82: Determine the grinding amount deviation based on the difference between the actual grinding amount and the target grinding amount.

[0105] Specifically, the calculated actual grinding amount is compared with the target grinding amount predetermined based on the processing parameters. The difference between the two is used to determine the grinding amount deviation, and the direction and degree of deviation are further judged. For example, when the target grinding amount is 18μm and the actual grinding amount is 15μm, the grinding amount deviation is judged to be -3μm, indicating insufficient grinding. When the actual grinding amount is greater than the target grinding amount, it is judged to be over-grinding. Through the quantitative analysis of the grinding amount deviation, the difference between the processing effect and the target requirements is clearly expressed.

[0106] S83: Adjust the grinding time of subsequent wafers to be processed based on the grinding amount deviation.

[0107] Specifically, the grinding time of subsequent wafers is adjusted according to the magnitude and direction of the grinding deviation. When it is determined that the grinding is insufficient, the grinding time is appropriately increased to compensate for the unmet grinding amount. When it is determined that the grinding is over-grinded, the grinding time is reduced accordingly to avoid further over-processing. For example, when the deviation is -3μm, a certain proportion or fixed time compensation can be added to the original grinding time, while when the deviation is +2μm, the grinding time is reduced. By making compensatory adjustments to the grinding time, the subsequent wafer processing gradually converges to the target grinding amount, thereby improving the consistency and stability of the overall batch processing.

[0108] In one embodiment, the automated control method for wafer trimming further includes:

[0109] S91: Construct a batch processing dataset based on the current wafer parameters and corresponding grinding times of multiple processed wafers.

[0110] Specifically, the current wafer parameters and corresponding grinding time of each wafer during continuous processing are recorded and organized according to the processing order to form a multi-dimensional data set reflecting the batch processing process. For example, the processing thickness, edge size and corresponding grinding time of wafers 1 to 20 are recorded and arranged in time series to construct a batch processing dataset containing the correspondence between processing input and processing results for subsequent overall analysis and trend judgment.

[0111] S92: Perform statistical analysis on the batch processing dataset to obtain the overall trend of grinding deviation.

[0112] Specifically, the constructed batch processing dataset is statistically processed. By summarizing and analyzing the parameter deviations of each wafer, the average value, direction of change, and fluctuation range of the deviations are calculated to identify whether there is a continuous trend of deviation from the target during the processing. For example, when the actual parameters of multiple wafers gradually deviate from the target value, it can be determined that there is a trend error, while when the deviation fluctuates randomly within a certain range, it is determined to be a stable state. By analyzing the batch data as a whole, the evolution law of processing deviation is extracted, thereby providing a basis for subsequent adjustments.

[0113] S93: Adjust the grinding time of subsequent wafers to be processed in batches based on the overall trend of change.

[0114] Specifically, the grinding time of subsequent wafers is uniformly corrected based on the overall trend obtained from statistical analysis. When a continuous increasing trend of deviation is detected, the grinding time is increased or decreased accordingly for overall compensation. When the deviation tends to stabilize, the current grinding time is kept unchanged or finely adjusted. For example, when multiple wafers show insufficient grinding and the deviation gradually increases, the overall grinding time benchmark can be increased. When the deviation gradually decreases and tends to the target range, the adjustment range is reduced. Through overall compensation control at the batch level, the processing process can quickly correct systematic errors, thereby improving the consistency and stability of the entire batch of wafer processing.

[0115] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0116] In one embodiment, an automated wafer trimming control system is provided, which corresponds one-to-one with the automated wafer trimming control method described in the above embodiments. For example... Figure 2 As shown, this automated wafer trimming control system includes a work order acquisition module, an initial parameter calculation module, a first wafer trimming control module, a parameter detection module, a range determination and time adjustment module, and a subsequent trimming control module. Detailed descriptions of each functional module are as follows:

[0117] The work order acquisition module is used to acquire preset work orders, which include the initial parameters and processing parameters of the wafer to be processed.

[0118] The initial parameter calculation module is used to calculate the initial grinding time information and the corresponding target parameter threshold based on the initial parameters and processing parameters of the wafer, and to use the initial grinding time information as the reference time for subsequent grinding control.

[0119] The first wafer finishing control module is used to control the edge trimming machine to finish the first wafer to be processed based on the initial finishing time information, and to record the finishing time.

[0120] The parameter detection module is used to perform stress testing on the processed wafer, obtain the current wafer parameters, and store the current wafer parameters;

[0121] The interval determination and time adjustment module is used to determine the control interval of the processed wafer based on the difference range between the current wafer parameters and the target parameter threshold, and to adjust the initial grinding time in segments according to the control interval to obtain the grinding time of the wafer to be processed later.

[0122] The subsequent grinding control module is used to control the trimming machine to perform grinding processing on the subsequent wafers according to the grinding time of the wafers to be processed.

[0123] Optionally, the work order acquisition module includes:

[0124] The work order parsing submodule is used to obtain preset work orders from the production management system, parse the work orders, and extract the initial wafer parameters and processing parameters from the work orders. The initial wafer parameters include at least one of the initial thickness parameters, edge size parameters, or material property parameters, and the processing parameters include at least one of the target processing thickness, grinding accuracy requirements, or grinding process control parameters.

[0125] Optionally, the initial parameter calculation module includes:

[0126] The target grinding amount calculation submodule is used to calculate the target grinding amount based on the initial wafer parameters and processing parameters.

[0127] The time conversion submodule is used to convert the target grinding amount into the initial grinding time information based on the preset mapping relationship between grinding amount and grinding time.

[0128] The threshold setting submodule is used to set the target parameter threshold range based on the processing parameters.

[0129] Optional, the interval determination and time adjustment module includes:

[0130] The difference calculation submodule is used to calculate the parameter difference between the current wafer parameters and the target parameter threshold.

[0131] The interval matching submodule is used to match the corresponding control interval based on the parameter difference;

[0132] The strategy invocation submodule is used to invoke the grinding time adjustment strategy corresponding to the control interval;

[0133] The time adjustment submodule is used to adjust the initial grinding time based on the grinding time adjustment strategy to obtain the grinding time of the wafer to be processed later.

[0134] Optionally, the automated wafer trimming control system further includes:

[0135] The interval division module is used to preset the range of wafer parameter differences and divide multiple control intervals according to the range of wafer parameter differences. The control intervals include the interval far from the target, the interval close to the target, and the critical control interval.

[0136] The strategy setting module is used to set a first grinding time strategy for the distance from the target range, a second grinding time strategy for the distance from the target range, and a third grinding time strategy for the critical control range. The first grinding time is longer than the second grinding time, and the second grinding time is longer than the third grinding time.

[0137] The grinding amount calculation module is used to calculate the actual grinding amount of the processed wafer based on the initial wafer parameters and the current wafer parameters.

[0138] The deviation determination module is used to determine the grinding amount deviation based on the difference between the actual grinding amount and the target grinding amount.

[0139] The compensation and adjustment module is used to compensate and adjust the grinding time of subsequent wafers based on the grinding amount deviation.

[0140] The dataset construction module is used to construct a batch processing dataset based on the current wafer parameters and corresponding grinding times of multiple processed wafers.

[0141] The trend analysis module is used to perform statistical analysis on batch processing datasets to obtain the overall trend of grinding deviation.

[0142] The batch compensation module is used to adjust the grinding time of subsequent wafers according to the overall trend.

[0143] For specific limitations regarding an automated wafer trimming control system, please refer to the limitations of an automated wafer trimming control method described above, which will not be repeated here. Each module in the aforementioned automated wafer trimming control system can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device in hardware form, or stored in the memory of a computer device in software form, so that the processor can call and execute the corresponding operations of each module.

[0144] In one embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 3As shown, the computer device includes a processor, memory, network interface, and database connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and database. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The network interface is used for communication with external terminals via a network connection. When the computer program is executed by the processor, it implements an automated control method for wafer trimming.

[0145] In one embodiment, a computer device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to perform the following steps:

[0146] Obtain a preset work order, which includes the initial parameters and processing parameters of the wafer to be processed;

[0147] The initial grinding time information and the corresponding target parameter threshold are calculated based on the initial parameters and processing parameters of the wafer, and the initial grinding time information is used as the reference time for subsequent grinding control.

[0148] The edge trimming machine is controlled to perform edge trimming on the first wafer to be processed based on the initial edge trimming time information, and the edge trimming time is recorded.

[0149] Perform stress testing on the processed wafers to obtain and store the current wafer parameters;

[0150] Based on the difference range between the current wafer parameters and the target parameter threshold, the control range of the processed wafer is determined, and the initial grinding time is adjusted in segments according to the control range to obtain the grinding time of the wafer to be processed later.

[0151] The trimming machine is controlled to perform trimming processing on the subsequent wafers based on the trimming time of the wafers to be processed.

[0152] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0153] Obtain a preset work order, which includes the initial parameters and processing parameters of the wafer to be processed;

[0154] The initial grinding time information and the corresponding target parameter threshold are calculated based on the initial parameters and processing parameters of the wafer, and the initial grinding time information is used as the reference time for subsequent grinding control.

[0155] The edge trimming machine is controlled to perform edge trimming on the first wafer to be processed based on the initial edge trimming time information, and the edge trimming time is recorded.

[0156] Perform stress testing on the processed wafers to obtain and store the current wafer parameters;

[0157] Based on the difference range between the current wafer parameters and the target parameter threshold, the control range of the processed wafer is determined, and the initial grinding time is adjusted in segments according to the control range to obtain the grinding time of the wafer to be processed later.

[0158] The trimming machine is controlled to perform trimming processing on the subsequent wafers based on the trimming time of the wafers to be processed.

[0159] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0160] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is used as an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the system can be divided into different functional units or modules to complete all or part of the functions described above.

[0161] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. An automated control method for wafer trimming, characterized in that, The automated control method for wafer trimming includes: Obtain a preset work order, which includes the initial parameters of the wafer to be processed and the processing parameters; The initial grinding time information and the corresponding target parameter threshold are calculated based on the initial parameters and processing parameters of the wafer, and the initial grinding time information is used as the reference time for subsequent grinding control. The edge trimming machine is controlled to perform edge trimming on the first wafer to be processed based on the initial edge trimming time information, and the edge trimming time is recorded. Perform stress testing on the processed wafer to obtain the current wafer parameters and store the current wafer parameters; Based on the difference range between the current wafer parameters and the target parameter threshold, the control interval of the processed wafer is determined, and the initial grinding time is adjusted in segments according to the control interval to obtain the grinding time of the wafer to be processed later. The trimming machine is controlled to perform trimming processing on the subsequent wafers according to the trimming time of the wafers to be processed.

2. The automated control method for wafer trimming according to claim 1, characterized in that, The process of obtaining a preset work order includes the initial parameters and processing parameters of the wafer to be processed, specifically including: A preset work order is obtained from the production management system, and the work order is parsed to extract the initial wafer parameters and processing parameters in the work order. The initial wafer parameters include at least one of initial thickness parameters, edge size parameters, or material property parameters, and the processing parameters include at least one of target processing thickness, grinding accuracy requirements, or grinding process control parameters.

3. The automated control method for wafer trimming according to claim 1, characterized in that, The calculation of initial grinding time information and corresponding target parameter thresholds based on the initial parameters and processing parameters of the wafer, and the use of the initial grinding time information as the reference time for subsequent grinding control, specifically includes: Calculate the target grinding amount based on the initial wafer parameters and the processing parameters; Based on the preset mapping relationship between grinding amount and grinding time, the target grinding amount is converted into initial grinding time information; The target parameter threshold range is set according to the processing parameters.

4. The automated control method for wafer trimming according to claim 1, characterized in that, The process involves determining the control interval of the processed wafer based on the difference range between the current wafer parameters and the target parameter threshold, and adjusting the initial grinding time in segments according to the control interval to obtain the grinding time for subsequent wafers to be processed. Specifically, this includes: Calculate the parameter difference between the current wafer parameters and the target parameter threshold; Match the corresponding control interval based on the parameter difference; Invoke the grinding time adjustment strategy corresponding to the control range; The initial grinding time is adjusted based on the grinding time adjustment strategy to obtain the grinding time for subsequent wafers to be processed.

5. The automated control method for wafer trimming according to claim 4, characterized in that, The automated control method for wafer trimming also includes: A preset range of wafer parameter differences is set, and multiple control intervals are divided according to the range of wafer parameter differences. The control intervals include the interval far from the target, the interval close to the target, and the critical control interval. A first grinding time strategy is set for the distance from the target range, a second grinding time strategy is set for the distance from the target range, and a third grinding time strategy is set for the critical control range, wherein the first grinding time is greater than the second grinding time, and the second grinding time is greater than the third grinding time.

6. The automated control method for wafer trimming according to claim 3, characterized in that, The automated control method for wafer trimming also includes: Calculate the actual grinding amount of the processed wafer based on the initial wafer parameters and the current wafer parameters; The grinding amount deviation is determined based on the difference between the actual grinding amount and the target grinding amount; The grinding time of the subsequent wafers to be processed is compensated and adjusted according to the grinding deviation.

7. The automated control method for wafer trimming according to claim 1, characterized in that, The automated control method for wafer trimming also includes: A batch processing dataset is constructed based on the current wafer parameters and corresponding grinding times of multiple processed wafers. Statistical analysis was performed on the batch processing dataset to obtain the overall trend of grinding deviation. Based on the overall trend of change, the grinding time of the subsequent wafers to be processed is adjusted in batches to compensate for the changes.

8. An automated control system for wafer trimming, characterized in that, The automated control system for wafer trimming includes: The work order acquisition module is used to acquire preset work orders, which include the initial parameters and processing parameters of the wafer to be processed. The initial parameter calculation module is used to calculate the initial grinding time information and the corresponding target parameter threshold based on the initial parameters and processing parameters of the wafer, and to use the initial grinding time information as the reference time for subsequent grinding control. The first wafer finishing control module is used to control the edge trimming machine to finish the first wafer to be processed according to the initial finishing time information, and to record the finishing time. The parameter detection module is used to perform stress testing on the processed wafer, obtain the current wafer parameters, and store the current wafer parameters; The interval determination and time adjustment module is used to determine the control interval of the processed wafer based on the difference range between the current wafer parameters and the target parameter threshold, and to adjust the initial grinding time in segments according to the control interval to obtain the grinding time of the wafer to be processed later. The subsequent grinding control module is used to control the trimming machine to perform grinding processing on the subsequent wafers according to the grinding time of the wafers to be processed.

9. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the automated control method for wafer trimming as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the steps of the automated control method for wafer trimming as described in any one of claims 1 to 7.

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