Single-layer homogenization device, thin film high homogenization preparation system, method and application thereof
By using a localized single-layer homogenization device and a highly disordered airflow layout, the problem of insufficient film uniformity in ALD technology was solved, enabling uniform deposition of films with complex structures such as high dielectric constant films, microchannel plate electron multipliers, and semiconductor packages, thereby improving device performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHINA BUILDING MATERIALS ACADEMY CO LTD
- Filing Date
- 2026-04-17
- Publication Date
- 2026-06-09
AI Technical Summary
Existing ALD technology struggles to achieve highly uniform airflow distribution in the reaction chamber through symmetry-breaking structures, failing to meet the uniformity requirements of thin films in scenarios with large aspect ratios, large length-to-diameter ratios, and large wafer-level areas, thus limiting the improvement of device performance.
The single-layer homogenization device, designed using localization theory, utilizes a localized homogenization orifice plate and support plate structure to set up a random distribution of multiple orifice sizes and asymmetric airflow paths, forming a strongly disordered airflow layout and achieving a high degree of localized homogenization of airflow.
It significantly improves the uniformity of thin films, with a film thickness dispersion coefficient that is 3 to 30 times better than conventional ALD technology. It is suitable for uniform deposition of micropores with large aspect ratios, wafer-level large areas, and aspect ratios, thereby improving device performance.
Smart Images
Figure CN122169058A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of atomic layer deposition (ALD) technology, and particularly to a monolayer homogenization apparatus, a thin film high homogenization preparation system, method, and applications thereof. Background Technology
[0002] Atomic layer deposition (ALD) technology is widely used in the manufacturing processes of various devices, including high-density integrated circuit memories, radio frequency tunable devices, microchannel plate electron multipliers, and semiconductor packaging, due to its precise controllability of deposited film thickness and high step coverage. With the continuous development of these technologies, device structures are evolving towards larger aspect ratios, larger length-to-diameter ratios, and larger wafer-level areas, placing higher demands on the uniformity of thin film deposition.
[0003] In existing ALD-related technologies, the main technical approaches for airflow homogenization include: using a combination of "circular pipe, rotating nozzle, and multiple flow dividers"; evenly arranging multiple air outlets with the same diameter on the same horizontal plane on multiple concentric rings; using dispersed pipelines with multiple air outlets of the same diameter distributed on the same horizontal plane; setting up multiple sets of air inlets and outlets, adjusting the hole size through perforated inserts, and cooperating with multi-stage buffer chambers, etc.
[0004] However, none of the aforementioned existing technologies involve an outlet method utilizing randomly distributed pore structures of multiple apertures within a single layer on the same horizontal plane. Existing technologies struggle to achieve highly uniform airflow distribution in the ALD reaction chamber through the high degree of localization of symmetry-broken structures. This makes it difficult to meet the stringent requirements for thin film uniformity in scenarios such as high aspect ratio thin film deposition, wafer-level large-area deposition, and uniform deposition and filling of micro-orifice walls and small holes with high aspect ratios, thus limiting further improvements in the performance of related devices. Summary of the Invention
[0005] In view of this, the main objective of the present invention is to provide a single-layer homogenization device, a thin film high homogenization preparation system, a method, and its applications. The technical problem to be solved is to achieve high uniformity of airflow distribution in the ALD reaction chamber through innovative airflow homogenization design based on localization theory, thereby meeting the requirements for high uniformity deposition of thin films in different application scenarios and improving the performance of related devices.
[0006] The objective of this invention and the technical problem it solves are achieved by the following technical solution. This invention proposes a single-layer homogenization device, which includes a homogenization support plate. The homogenization support plate is provided with a localized homogenization orifice plate, which has two or more orifice diameters for gas homogenization.
[0007] The objectives of this invention and the technical problems solved can be further achieved by the following technical measures.
[0008] Preferably, in the aforementioned single-layer homogenization device, the homogenization tray has an air inlet and an air outlet that pass through it.
[0009] Preferably, in the aforementioned single-layer homogenization device, an outlet blocking block is provided on the homogenization tray, and the outlet blocking block is located on one side of the outlet.
[0010] Preferably, in the aforementioned single-layer homogenization device, the gas equalization orifices of two or more apertures are arranged in a non-periodic random discrete distribution.
[0011] Preferably, in the aforementioned single-layer homogenization device, the apertures on the localized homogenization plate include three types: large aperture, medium aperture, and small aperture, and the three apertures are randomly mixed and arranged.
[0012] Preferably, in the aforementioned single-layer homogenization device, the air inlet and air outlet are located in different areas of the homogenization plate, forming an asymmetric airflow path.
[0013] Preferably, in the aforementioned single-layer homogenization device, an airflow buffer cavity is formed between the localized homogenization orifice plate and the homogenization support plate.
[0014] The objectives of this invention and the technical problems it solves can be further achieved by the following technical measures. This invention proposes a highly homogenized thin film preparation system, wherein the highly homogenized thin film preparation apparatus includes the aforementioned monolayer homogenization device.
[0015] The objectives of this invention and the technical problems it solves can also be achieved by the following technical measures. This invention proposes a method for preparing highly uniform thin films. The method employs the aforementioned single-layer homogenization device, applied to the airflow control of an ALD reaction chamber. This single-layer homogenization device creates a highly disordered atomic layer deposition airflow layout system, utilizing the high localization of symmetry breaking to achieve highly uniform airflow distribution, thereby completing the highly uniform deposition of the thin film.
[0016] Preferably, in the aforementioned method for preparing highly uniform thin films, the film thickness dispersion coefficient of the thin film is... .
[0017] The objectives of this invention and the technical problems it solves can also be achieved using the following technical measures. The application of the above-mentioned thin film high homogenization preparation system proposed in this invention in the ultra-uniform preparation of high dielectric constant thin films.
[0018] The objectives of this invention and the technical problems it solves can also be achieved using the following technical measures. The application of the above-mentioned high-uniformity thin film preparation system proposed in this invention in the uniform deposition of temperature-resistance modified thin films for microchannel plate electron multipliers.
[0019] The objectives of this invention and the technical problems it solves can also be achieved using the following technical measures. The application of the high-uniformity thin film preparation system proposed in this invention in the uniform filling of conductive materials in vertical interconnect channels of semiconductor packaging.
[0020] The objectives of this invention and the technical problems it solves can also be achieved using the following technical measures. The application of the high-uniformity thin film preparation system proposed in this invention in the uniform filling of ultra-high aspect ratio channel thin films in 3D NAND flash memory.
[0021] Compared with existing technologies, the monolayer homogenization device, thin film high homogenization preparation system, method, and applications described in this invention have at least the following beneficial effects: Compact Structure: Employing a single-layer homogenization device design eliminates the need for complex multi-layer structures or additional auxiliary components, simplifying the device structure and reducing manufacturing and assembly difficulties. Excellent Homogenization Effect: Based on localization theory, a highly disordered airflow layout is created through outlets with randomized multi-aperture structures. High localization is achieved by utilizing symmetry breaking, resulting in highly uniform airflow distribution within the ALD reaction chamber. The uniformity of the deposited film is significantly superior to existing technologies. The film thickness dispersion coefficient of films deposited on the inner wall of long-diameter structures using conventional ALD technology is significantly lower. Even reaching The film thickness dispersion coefficient of the thin film deposited on the inner wall of a long-diameter structure using the ALD technology of this invention. It is even better than 0.002, and the film thickness uniformity of films prepared by the latter technology is improved by 3 to 30 times. It has a wide range of applications: it can meet the needs of various complex scenarios such as high aspect ratio film deposition, wafer-level large area deposition, high aspect ratio micropore inner wall deposition, and uniform filling of small pores. It is suitable for the manufacturing of different types of thin film materials and devices.
[0022] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the preferred embodiments of the present invention are described in detail below. Attached Figure Description
[0023] Figure 1 This is a three-dimensional structural diagram of a conventional ALD chamber; Figure 2 This is a three-dimensional structural schematic diagram of the localized state homogenization ALD chamber according to some embodiments of the present invention; Figure 3 This is a three-dimensional schematic diagram of a single-layer homogenization device according to some embodiments of the present invention; Figure 4 The diagram shows the structure of a localized homogenized perforated plate according to some embodiments of the present invention, wherein (a) is a localized state constructed by random distribution of two pore sizes, and (b) is a localized state constructed by random distribution of three or more pore sizes. Figure 5 This is a schematic diagram of the structure of the homogenization device tray in some embodiments of the present invention; Figure 6 This is a comparison chart of the dispersion coefficients of the thin film thickness on the inner wall of the channel in Examples 1-3 of the present invention and Comparative Example 1; Figure 7 The images show a comparison of the thin film on the inner wall of the channel in Example 1 and Comparative Example 1 of the present invention, where (a) is a microscopic image of the microchannel device, (b) is the morphology of the conventional ALD thin film in Comparative Example 1, and (c) is the morphology of the ALD thin film in Example 1 of the present invention. Wherein, 01, 01' - ALD chamber; 02, 02' - air inlet; 03, 03' - air outlet; 04 - single-layer homogenization device (two pore sizes randomly distributed); 06 - single-layer homogenization device (three or more pore sizes randomly distributed); 041 - localized homogenization orifice plate (two pore sizes randomly distributed); 061 - localized homogenization orifice plate (three or more pore sizes randomly distributed); 042 - homogenization support plate; 0421 - air outlet blocking block; A, B, C - homogenization passages. Detailed Implementation
[0024] To further illustrate the technical means and effects adopted by the present invention to achieve the intended purpose, the following detailed description, in conjunction with preferred embodiments, provides a detailed explanation of the specific implementation methods, structures, features, and effects of a single-layer homogenization device, a thin film high homogenization preparation system, a method, and their applications according to the present invention. In the following description, different "embodiments" or "embodiments" do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics in one or more embodiments can be combined in any suitable form.
[0025] Unless otherwise specified, all materials and reagents mentioned below are commercially available products well-known to those skilled in the art; unless otherwise specified, all methods described are methods known in the art. Unless otherwise defined, the technical or scientific terms used should have the ordinary meaning understood by those skilled in the art. Where specific experimental steps or conditions are not specified below, they can be performed according to the conventional experimental steps or conditions described in the literature in this field.
[0026] like Figures 2-4As shown, according to some embodiments of the present invention, a single-layer homogenization device 04, 06 is provided. The single-layer homogenization device 04, 06 includes a homogenization support plate 042, on which localized homogenization orifice plates 041, 061 are provided. The localized homogenization orifice plates 041, 061 have gas equalization through holes A, B, C with two or more apertures, forming a random gas outlet layout with multiple aperture structures. The purpose of this arrangement is to construct a strongly disordered gas flow homogenization field, utilize symmetry breaking to achieve highly localized and uniform gas flow distribution, and avoid problems such as flow deviation, short circuit, and local concentration unevenness in the reaction gas flow. At the same time, the single-layer structure simplifies the device, reduces gas flow loss, and ultimately makes the gas flow uniform throughout the ALD reaction chamber, meeting the requirements for highly uniform thin film deposition in complex scenarios such as large aspect ratio, large length-to-diameter ratio, and large wafer-level area.
[0027] In some optional embodiments, the homogenizing tray 042 has an inlet 02 and an outlet 03 extending through it. This arrangement aims to provide a dedicated flow channel for the ALD reaction gas, forming a complete airflow path of "inlet → homogenization buffer → uniform emission → exhaust gas discharge"; ensuring that the reaction gas is first fully mixed and evenly distributed between the homogenizing tray and the localized homogenizing orifice plate, then stably acts on the sample to be deposited, and finally is orderly discharged; avoiding airflow short-circuiting, turbulence, stagnation, or backflow, ensuring highly uniform airflow distribution, and improving the consistency of thin film deposition.
[0028] In some alternative embodiments, wherein, as Figure 5 As shown, the homogenization tray 042 is provided with an outlet blocking block 0421, which is located on one side 03 of the outlet. The outlet blocking block 0421 is provided to reduce the direct output of ALD reaction gas from the inlet 02 to the outlet 03, and instead, to keep it within the space between the localized homogenization plates 041 and 061 and the homogenization tray 042 as much as possible, and then eject it through the pores of the localized homogenization plates 041 and 061 into the sample above to be deposited with ALD.
[0029] In some optional embodiments, the air-equalizing orifices A, B, and C with two or more orifice diameters are arranged in a non-periodic, random, and discrete distribution. This arrangement aims to break the airflow symmetry caused by regular arrangement, construct a strongly disordered airflow field, and utilize symmetry breaking to achieve highly localized and uniform airflow distribution, avoiding local airflow accumulation, deflection, or dead zones, thereby improving the uniformity of airflow distribution within the ALD chamber. The random and discrete distribution of two or more orifice diameters can create a localized homogenized state, i.e., forming localized homogenized orifice plates 041 and 061.
[0030] In some optional embodiments, the apertures on the localized homogenizing orifice plates 041 and 061 include three types: large aperture, medium aperture, and small aperture, and the three apertures are randomly mixed and arranged. This arrangement is intended to create a multi-level airflow damping difference in the localized homogenizing orifice plates 041 and 061, thereby enhancing the localized homogenization effect and making the airflow distribution more delicate and balanced, especially improving the uniformity of thin film deposition on the inner wall of structures with large aspect ratios and high depth-to-width ratios.
[0031] In some optional embodiments, the air inlet 02 and the air outlet 03 are located in different areas of the homogenization tray, forming an asymmetric airflow path. This arrangement aims to extend the residence and mixing time of the airflow in the buffer chamber, preventing the airflow from flowing directly from the air inlet to the air outlet and causing a short circuit, thus ensuring that the airflow is fully homogenized before acting on the sample to be deposited.
[0032] In some optional embodiments, an airflow buffer cavity is formed between the localized homogenizing orifice plates 041 and 061 and the homogenizing support plate. This arrangement is to create an airflow buffer cavity between the localized homogenizing orifice plates and the homogenizing support plate 042, which aims to provide a space for pressure stabilization, mixing, and uniform flow of the reactant gas, eliminate inlet pressure fluctuations, and ensure that the gas is fully homogenized before entering the orifice plates, thereby ensuring a stable and consistent airflow exiting from the homogenizing orifice.
[0033] Some embodiments of the present invention also provide a high homogenization preparation system for thin films, wherein the high homogenization preparation device for thin films includes the above-mentioned single-layer homogenization devices 04 and 06.
[0034] In some alternative embodiments, the single-layer homogenization device is installed inside the localized homogenization ALD chamber 01; it is the core functional component for achieving highly uniform airflow in the chamber.
[0035] Some embodiments of the present invention also provide a method for preparing highly uniform thin films. The method uses the above-mentioned monolayer homogenization device 04 to control the airflow in the ALD reaction chamber. The monolayer homogenization device 04 is used to create a highly disordered atomic layer deposition airflow layout system. By utilizing the high localization of symmetry breaking, the airflow is highly uniformly distributed, thereby completing the highly uniform deposition of the thin film.
[0036] The film thickness dispersion coefficient of the thin film was tested. Preferred .
[0037] Some embodiments of the present invention also provide an application of the above-described thin film high homogenization preparation system in the ultra-uniform preparation of high dielectric constant thin films. High dielectric constant thin film materials such as barium strontium titanate and hafnium oxide are widely used in high-density integrated circuit memories, radio frequency tunable devices, etc., and in stereolithography, they need to meet the higher requirements for film uniformity in large aspect ratio thin film deposition manufacturing and wafer-level large-area deposition manufacturing.
[0038] Some embodiments of the present invention also provide an application of the above-described high-uniformity thin film preparation system in the uniform deposition of temperature-resistance modified thin films for microchannel plate electron multipliers. Thin films such as barium strontium titanate and ruthenium oxide possess step-positive temperature resistance characteristics and can be used as temperature-resistance modified thin film materials in microchannel plate electron multipliers. Uniform deposition of thin films on the inner wall surface of micropores with large aspect ratios is required to meet the application requirements of microchannel plate electron multipliers.
[0039] Some embodiments of the present invention also provide an application of the above-described high-uniformity thin film preparation system in the uniform filling of conductive materials in vertical interconnect channels of semiconductor packaging. Metals such as Cu, used as conductive materials for vertical interconnect channels in semiconductor packaging, need to achieve uniform deposition and filling inside the small holes of next-generation wafer-level high aspect ratio interposers to reduce signal transmission loss in the vertical interconnects of the semiconductor packaging interposer.
[0040] Some embodiments of the present invention also provide an application of the above-described high-uniformity film preparation system in the uniform filling of ultra-high aspect ratio channel films for 3D NAND flash memory. Ultra-high aspect ratio channel films for 3D NAND flash memory require highly uniform deposition at the channel inlet, middle, and bottom, with a low film thickness dispersion coefficient. It is free of pinholes, voids, and local thickness unevenness to ensure stable threshold voltage of storage cells, reliable data retention, and high device yield.
[0041] The single-layer homogenization device described in this invention can create a highly disordered atomic layer deposition gas flow layout system. By utilizing the highly localized characteristics of symmetry breaking, the gas flow in the ALD reaction chamber can be highly uniformly distributed, thereby ensuring the uniformity of the thin film deposition process and achieving highly uniform thin film preparation.
[0042] In the above technical solution, the single-layer homogenization device of the present invention can manufacture a highly disordered atomic layer deposition gas flow layout system. By utilizing the highly localized characteristics of symmetry breaking, the gas flow in the ALD reaction chamber can be made highly uniform, thereby ensuring the uniformity of the thin film deposition process and achieving highly uniform thin film preparation.
[0043] The present invention will be further described below with reference to specific embodiments, but this should not be construed as a limitation on the scope of protection of the present invention. Some non-essential improvements and adjustments made by those skilled in the art based on the above description of the present invention still fall within the scope of protection of the present invention. Example 1
[0044] like Figures 2-4 As shown, this embodiment provides a single-layer homogenization device 04, which includes a homogenization support plate 042. A localized homogenization orifice plate 041 is provided on the homogenization support plate 042. The localized homogenization orifice plate 041 has two types of equalization holes A and B with different apertures, forming a random multi-aperture structure for the air outlet. The homogenization support plate 042 has an air inlet 02 and an air outlet 03 penetrating through it. An air outlet blocking block 0421 is provided on the homogenization support plate 042, located on one side 03 of the air outlet. The air outlet blocking block 0421 has an arc-shaped flow guiding structure. The two types of equalization holes A and B are non-periodic, randomly distributed, with an opening rate of 30% and apertures of 4 mm and 6 mm respectively. mm; the air inlet 02 and the air outlet 03 are located in different areas of the homogenization plate, forming an asymmetric airflow path; the localized homogenization orifice plates 041 and 061 form an airflow buffer cavity with a height of 2 mm between them and the homogenization plate.
[0045] The aforementioned single-layer homogenization device 04 is used in the atomic layer deposition process of high dielectric constant thin films. This device creates a highly disordered atomic layer deposition gas flow layout system. For example, the deposition temperature is 350℃, the chamber pressure is 3 mbar, the Ba precursor pulse time is 1.5 s and the resting time is 5 s, the oxygen source pulse time is 1 s and the resting time is 5 s, the Ti precursor pulse time is 20 ms and the resting time is 7 s, the oxygen source pulse time is 1 s and the resting time is 5 s, the purge gas is N2, the purge flow rate is 20 sccm, the purge time is 6 s, the deposition cycle is 1000 times, and the target film thickness is 95 nm. High localization due to symmetry breaking achieves ultra-uniform preparation of high dielectric constant thin films, thereby completing the highly uniform deposition of high dielectric constant thin films. The film thickness dispersion coefficient of the high dielectric constant thin film... The uniformity is 0.018, which is 3.2 times better than that of conventional ALD, as shown in Figure 6(a). Example 2
[0046] like Figures 2-4As shown, this embodiment provides a single-layer homogenization device 06, which includes a homogenization support plate 042. A localized homogenization orifice plate 061 is provided on the homogenization support plate 042. The localized homogenization orifice plate 061 has three types of equalization holes A, B, and C, forming a random multi-diameter outlet layout. The homogenization support plate 042 has an inlet 02 and an outlet 03 penetrating through it. An outlet blocking block 0421 is provided on the homogenization support plate 042, located on one side 03 of the outlet. The outlet blocking block 0421 has an arc-shaped flow guiding structure. The three types of equalization holes A, B, and C are randomly mixed and arranged, with an opening rate of 32% and hole diameters of 4mm, 6mm, and 6mm respectively. mm, 12mm; the air inlet 02 and air outlet 03 are located in different areas of the homogenization plate, forming an asymmetric airflow path; the localized homogenization orifice plates 041 and 061 form an airflow buffer cavity with a height of 2mm between them and the homogenization plate.
[0047] The aforementioned single-layer homogenization device 06 is used in the atomic layer deposition process of temperature-resistance modified thin films. This device creates a highly disordered atomic layer deposition gas flow layout system. For example, the deposition temperature is 400℃, the chamber pressure is 3 mbar, the Ba precursor pulse time is 1.5 s and the resting time is 5 s, the oxygen source pulse time is 1 s and the resting time is 5 s, the Sr precursor pulse time is 1.5 s and the resting time is 5 s, the oxygen source pulse time is 1 s and the resting time is 5 s, the Ti precursor pulse time is 30 ms and the resting time is 8 s, the oxygen source pulse time is 1 s and the resting time is 5 s, the purge gas is N2, the purge flow rate is 20 sccm, the purge time is 6 s, the deposition cycle is 600 times, and the target film thickness is 80 mm. nm utilizes symmetry breaking and high localization to achieve ultra-uniform fabrication of temperature-resistance modified films, thereby completing the highly uniform deposition of temperature-resistance modified films; the film thickness dispersion coefficient of the temperature-resistance modified films is... The uniformity is 0.008, which is 8.5 times better than that of conventional ALD, as shown in Figure 6(b). Example 3
[0048] like Figures 2-4As shown, this embodiment provides a single-layer homogenization device 04, which includes a homogenization support plate 042. A localized homogenization orifice plate 041 is provided on the homogenization support plate 042. The localized homogenization orifice plate 041 has two types of equalization through holes A and B with different apertures, forming a randomized outlet layout with multiple aperture structures. The homogenization support plate 042 has an inlet 02 and an outlet 03 penetrating through it. An outlet blocking block 0421 is provided on the homogenization support plate 042. The outlet blocking block 0421 is located on one side 03 of the outlet, and the outlet blocking block 0421 is an arc-shaped flow guide structure; the two apertures of the equalizing holes A and B are distributed in a non-periodic random discrete distribution, with an opening rate of 35% and apertures of 3mm and 7mm respectively; the inlet 02 and outlet 03 are located in different areas of the equalization support plate, forming an asymmetric airflow path; the localized equalization orifice plates 041 and 061 form an airflow buffer cavity with a height of 2mm between them and the equalization support plate.
[0049] The aforementioned single-layer homogenization device 04 is used in the atomic layer deposition process of conductive materials for vertical interconnect channels in semiconductor packaging. This device creates a highly disordered atomic layer deposition gas flow layout system. For example, the deposition temperature is 200℃, the chamber pressure is 3 mbar, the Cu precursor pulse time is 3 s, the settling time is 15 s, the purge gas is N2, the purge flow rate is 20 sccm, the purge time is 20 s, the deposition cycle is 3500 times, and the target film thickness is 105 nm. This utilizes the high localization of symmetry breaking to achieve ultra-uniform fabrication of the conductive materials for vertical interconnect channels in semiconductor packaging, thereby completing the highly uniform deposition of the conductive materials. The film thickness dispersion coefficient of the conductive materials for vertical interconnect channels in semiconductor packaging... The uniformity is 0.004, which is 16.3 times better than that of conventional ALD, as shown in Figure 6(c). Example 4
[0050] like Figures 2-4As shown, this embodiment provides a single-layer homogenization device 06, which includes a homogenization support plate 042. A localized homogenization orifice plate 061 is provided on the homogenization support plate 042. The localized homogenization orifice plate 061 has three types of equalization through holes A, B, and C, forming a random multi-aperture structure for the air outlet. The homogenization support plate 042 has an air inlet 02 and an air outlet 03 penetrating through it. An air outlet blocking block 0421 is provided on the homogenization support plate 042. The blocking block 0421 is located on one side 03 of the air outlet, and the air outlet blocking block 0421 is an arc-shaped flow guide structure; the three apertures of the equalizing through holes A, B, and C are arranged in a strongly disordered, non-periodic random arrangement, with an opening rate of 41% and apertures of 2mm, 6mm, and 12mm, respectively; the air inlet 02 and the air outlet 03 are located in different areas of the equalization support plate, forming an asymmetric airflow path; the localized equalization orifice plates 041 and 061 form an airflow buffer cavity with a height of 2mm between them and the equalization support plate.
[0051] The aforementioned single-layer homogenization device 06 is used in the atomic layer deposition process of ultra-high aspect ratio channel films for 3D NAND flash memory. This device creates a highly disordered atomic layer deposition gas flow layout system. For example, the deposition temperature is 200℃, the chamber pressure is 3 mbar, the Al precursor pulse time is 0.1 s, the oxygen source pulse time is 0.1 s, the purge gas is N2, the purge flow rate is 20 sccm, the purge time is 5 s, the deposition cycle is 30 times, and the target film thickness is 3 nm. By utilizing the high localization of symmetry breaking, ultra-uniform fabrication of ultra-high aspect ratio channel films for 3D NAND flash memory is achieved, thus completing the highly uniform deposition of ultra-high aspect ratio channel films for 3D NAND flash memory. The film thickness dispersion coefficient of the ultra-high aspect ratio channel film for 3D NAND flash memory is... The uniformity is 0.002, which is 30 times better than that of conventional ALD.
[0052] Comparative Example 1 This comparative example adopts Figure 1The conventional ALD reaction chamber 01' shown does not have the single-layer homogenization device of this invention installed; instead, it uses conventional equal-aperture regularly arranged flow dividers for airflow homogenization. The remaining ALD deposition process parameters are the same as in Example 1. The ALD chamber 01' serves as an integral reaction chamber, providing a closed space for thin film deposition and acting as the mounting carrier for all components. An inlet 02' is provided through the side wall or top region of the ALD chamber 01' to introduce ALD reaction gas into the chamber. An outlet 03' is provided through the bottom of the ALD chamber 01''s 02' or on the opposite side of the inlet to discharge the waste gas after the reaction. The reaction gas enters the ALD chamber 01' directly through the inlet 02', diffuses directly to the sample area to be deposited without homogenization, and is discharged directly through the outlet 03' after the reaction. Figure 1 .
[0053] The conductivity of the vertical interconnect channel in semiconductor packaging can be seen from the comparison of film thickness dispersion factors in Figure 6. The film thickness dispersion factor of the thin film prepared using conventional ALD technology is... The film thickness dispersion coefficient can even reach 0.065, resulting in poor film thickness uniformity, uneven deposition on the inner wall of the channel with a large aspect ratio, and significant film thickness deviation between the inlet and the bottom. However, after using the single-layer homogenization device and high homogenization preparation method of this invention, the film thickness dispersion coefficient is significantly reduced. The optimal value can reach 0.002, improving film thickness uniformity by 3 to 30 times. As can be seen from the microstructure comparison in Figure 7, the film prepared by conventional ALD has a rough surface and obvious defects; while the film prepared by this invention has a dense, flat, uniform, and defect-free surface with excellent step coverage.
[0054] The above results fully demonstrate that the present invention achieves highly uniform airflow distribution in the ALD chamber through localized homogenization plate and single-layer homogenization structure, significantly improving the uniformity and quality of thin film deposition and achieving unexpected technical effects.
[0055] In summary, the thin film high homogenization preparation method, apparatus, and applications provided by this invention are compact in structure, have excellent homogenization effect, and are widely applicable. They effectively solve the problem of insufficient uniformity in existing ALD technology for thin film deposition in complex structure devices, meeting the demand for high homogenization deposition in multiple fields such as integrated circuits, electron multipliers, and semiconductor packaging. This helps improve the performance and reliability of related devices, and has significant industrial application value and market prospects.
[0056] Numerous specific details are set forth in this specification. However, it will be understood that embodiments of the invention may be practiced without these specific details. In some embodiments, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.
[0057] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.
[0058] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.
[0059] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention shall still fall within the scope of the technical solution of the present invention.
Claims
1. A single-layer homogenization device, characterized in that, The single-layer homogenization device includes a homogenization tray, on which a localized homogenization orifice plate is provided, the localized homogenization orifice plate having two or more orifice diameters for gas homogenization.
2. The single-layer homogenization device as described in claim 1, characterized in that, The homogenizing tray has an air inlet and an air outlet that pass through it; the homogenizing tray is provided with an air outlet blocking block, which is located on one side of the air outlet; the homogenizing holes with two or more apertures are distributed in a non-periodic random discrete pattern.
3. The single-layer homogenizing device according to claim 2, characterized in that, The apertures on the localized homogenizing orifice plate include three types: large aperture, medium aperture, and small aperture, and the three apertures are randomly mixed and arranged; the air inlet and air outlet are located in different areas of the homogenizing support plate, forming an asymmetric airflow path; an airflow buffer cavity is formed between the localized homogenizing orifice plate and the homogenizing support plate.
4. A system for preparing highly uniform thin films, characterized in that, The thin film high homogenization preparation apparatus includes the single-layer homogenization apparatus according to any one of claims 1-3.
5. A method for preparing a highly uniform thin film, characterized in that, The preparation method uses the single-layer homogenization device described in any one of claims 1-3, which is applied to the airflow control of the ALD reaction chamber. The single-layer homogenization device is used to create a highly disordered atomic layer deposition airflow layout system. The airflow is highly uniformly distributed by utilizing the high localization of symmetry breaking, thereby completing the highly uniform deposition of the thin film.
6. The method for preparing highly uniform thin films according to claim 5, characterized in that, The film thickness dispersion coefficient .
7. The application of the high homogenization preparation system of claim 4 in the ultra-uniform preparation of high dielectric constant thin films.
8. The application of the high homogenization preparation system of the thin film according to claim 4 in the uniform deposition of temperature resistance modified thin films for microchannel plate electron multipliers.
9. The application of the high homogenization preparation system of the thin film according to claim 4 in the uniform filling of conductive materials in vertical interconnect channels of semiconductor packaging.
10. The application of the high homogenization preparation system of claim 4 in the uniform filling of ultra-high aspect ratio channel thin films in 3D NAND flash memory.