Passivation system and passivation method for perovskite thin film

Abstract

The present application provides a passivation system and passivation method for a perovskite thin film. A passivation method for a perovskite thin film, the method comprising the following steps: disposing in a carrier a silicon wafer on which a perovskite thin film is formed; placing the carrier into a first accommodating space in a first passivation tank by means of a manipulator to perform a soaking treatment; taking the carrier out by means of the manipulator, placing same into a second accommodating space in a heat treatment tank to perform a heat treatment, and enabling a first passivation agent and the perovskite thin film to undergo a passivation reaction so as to form a first passivation layer on the perovskite thin film; taking the carrier out from the heat treatment tank by means of the manipulator, and placing the carrier into a third accommodating space in a cleaning tank to perform a cleaning treatment, wherein the third accommodating space contains a second solution, and the second solution comprises a low-polarity solvent; and taking the carrier out from the cleaning tank by means of the manipulator, and placing same into the heat treatment tank to perform drying.

Description

Perovskite Thin Film Passivation System and Passivation Method

[0001] Related applications

[0002] This application claims priority to Chinese patent application filed on January 13, 2025, with application number 2025100461928, entitled "Perovskite Thin Film Passivation System and Passivation Method", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of photovoltaic cell technology, and in particular to a perovskite thin film passivation system and passivation method. Background Technology

[0004] In perovskite solar cells, surface passivation of the perovskite thin film can repair deep defects at the interface, effectively improving the performance of perovskite solar cells.

[0005] In traditional technologies, perovskite passivation typically involves spin coating, blade coating, or slot coating to apply the passivation solution, or vapor deposition of the passivation material. However, spin coating, blade coating, or slot coating to apply the passivation solution is difficult to achieve low-cost mass production at high throughput. Summary of the Invention

[0006] According to various embodiments of this application, a perovskite thin film passivation system and passivation method are provided.

[0007] In a first aspect, this application provides a perovskite thin film passivation method, comprising the following steps: placing a silicon wafer with a perovskite thin film formed thereon in a carrier; immersing the carrier in a first containment space of a first passivation tank using a robotic arm; the first containment space containing a first solution, the first solution comprising a first passivating agent and a low-polarity solvent; removing the carrier from the first passivation tank using a robotic arm and placing it in a second containment space of a heat treatment tank for heat treatment, so that the first passivating agent reacts with the perovskite thin film to form a first passivation layer on the perovskite thin film; removing the carrier from the heat treatment tank using a robotic arm and placing it in a third containment space of a cleaning tank for cleaning; the third containment space containing a second solution, the second solution comprising a low-polarity solvent; and removing the carrier from the cleaning tank using a robotic arm and placing it in a heat treatment tank for drying.

[0008] In one embodiment, the first passivation tank is equipped with a first vibration mechanism, which drives the first solution to vibrate during the soaking process.

[0009] In one embodiment, the cleaning tank is equipped with a second vibration mechanism, which drives the second solution to vibrate during the cleaning process.

[0010] In one embodiment, before the carrier is immersed in the first receiving space of the first passivation tank by a robotic arm, the perovskite thin film passivation method further includes: placing the carrier into a cleaning tank for surface cleaning by a robotic arm; removing the carrier from the cleaning tank by a robotic arm and placing it into a heat treatment tank for drying.

[0011] In one embodiment, before the carrier is removed from the heat treatment tank by a robotic arm and placed into the third receiving space of the cleaning tank for cleaning, the perovskite thin film passivation method further includes: immersing the carrier in a second passivation tank by a robotic arm; the second passivation tank contains a third solution, the third solution including a second passivating agent and a low-polarity solvent; removing the carrier from the second passivation tank by a robotic arm and placing it into the second receiving space of the heat treatment tank for heat treatment, so that the second passivating agent reacts with the perovskite thin film to form a second passivation layer on the perovskite thin film.

[0012] Secondly, this application also provides a perovskite thin film passivation system applicable to any of the perovskite thin film passivation methods described above, the perovskite thin film passivation system comprising: a carrier configured to support a silicon wafer on which a perovskite thin film is formed; a first passivation tank defining a first receiving space containing a first solution comprising a first passivating agent and a low-polarity solvent, the first receiving space being configured to place the carrier; a heat treatment tank defining a second receiving space containing a second solution comprising a low-polarity solvent, the heat treatment tank being configured to heat treat the carrier; a cleaning tank defining a third receiving space containing a second solution comprising a low-polarity solvent, the third receiving space being configured to place the carrier; and a robotic arm configured to grip the carrier, such that the carrier is configured to move between the first receiving space, the second receiving space, and the third receiving space.

[0013] In one embodiment, the first passivation tank is provided with a first vibration mechanism, which is configured to drive the first solution to vibrate.

[0014] In one embodiment, the first vibration mechanism is an ultrasonic generator or a bubbler.

[0015] In one embodiment, the cleaning tank is equipped with a second vibration mechanism configured to drive the second solution to vibrate.

[0016] In one embodiment, the second vibration mechanism is an ultrasonic generator or a bubbler.

[0017] In one embodiment, the heat treatment tank is further configured with a blower and a control module, the blower being configured to blow hot air into the second accommodating space, and the control module being configured to control the temperature and airflow of the hot air blown out by the blower.

[0018] In one embodiment, the perovskite thin film passivation system further includes: a replenishment device, comprising a first replenishment tank and a second replenishment tank; the first replenishment tank is configured to store a first solution and communicate with the first containment space, and the first replenishment tank is configured to deliver the first solution to the first containment space; the second replenishment tank is configured to store a low-polarity solvent and communicate with the first containment space and the third containment space, and the second replenishment tank is further configured to deliver the low-polarity solvent to at least one of the first containment space and the third containment space.

[0019] In one embodiment, the first replenishment tank is equipped with a first flow meter and a first control valve, the first control valve being configured to periodically deliver the first solution to the first containment space.

[0020] In one embodiment, the second replenishment tank is equipped with a second flow meter and a second control valve, the second control valve being configured to periodically deliver the low-polarity solvent to at least one of the first and third containment spaces.

[0021] In one embodiment, the perovskite thin film passivation system further includes a condensation recovery device connected to the heat treatment tank and configured to collect volatile low-polarity solvents and collect them after condensation.

[0022] Details of one or more embodiments of this application are set forth in the following drawings and description to make other features, objects and advantages of this application more readily apparent. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the disclosed drawings without creative effort.

[0024] Figure 1 is a structural block diagram of a perovskite thin film passivation system in one embodiment.

[0025] Figure 2 is a flowchart of a perovskite thin film passivation method in one embodiment.

[0026] Figure 3 is a flowchart of a perovskite thin film passivation method in another embodiment.

[0027] Explanation of reference numerals in the attached drawings: 10, carrier; 20, first passivation tank; 30, heat treatment tank; 40, cleaning tank; 50, robotic arm; 60, liquid replenishment device; 61, first liquid replenishment tank; 62, second liquid replenishment tank; 70, condensation recovery device. Detailed Implementation

[0028] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0029] Referring to Figure 1, which shows a structural block diagram of a perovskite thin film passivation system in one embodiment, the perovskite thin film passivation system includes a carrier 10, a first passivation tank 20, a heat treatment tank 30, a cleaning tank 40, and a robot 50. The carrier 10 is configured to support a silicon wafer on which a perovskite thin film is formed. The first passivation tank 20 is configured to passivate the perovskite thin film on the silicon wafer. The heat treatment tank 30 is configured to provide a heating environment that promotes the passivation reaction and also provides a drying effect. The cleaning tank 40 is configured to clean the silicon wafer. The robot 50 is configured to grip and move the carrier 10, allowing the carrier 10 to move between the first passivation tank 20, the heat treatment tank 30, and the cleaning tank 40.

[0030] Specifically, the first passivation tank 20 defines a first receiving space, which may be a box structure with an opening at the top. The first receiving space contains a first solution, which includes a first passivating agent and a low-polarity solvent. The first receiving space is configured to hold the carrier 10. Thus, the robot arm 50 can grasp the carrier 10 and place it into the first receiving space through the opening at the top of the first passivation tank 20, immersing it in the first solution, thereby depositing the first solution onto the silicon wafer.

[0031] In this embodiment of the application, the "low polarity solvent" is optionally a solvent with a dielectric constant ≤20 at 20°C.

[0032] For example, the low-polarity solvent may be one or more combinations of n-butanol, toluene, isopropanol, etc.

[0033] For example, the first passivating agent can be a propylenediamine halide salt, such as propylenediamine hydroiodide, propylenediamine hydrochloride, and propylenediamine bromate. The first passivating agent can also be an ethylenediamine halide salt, a butanediamine halide salt, a piperazine halide salt, etc.

[0034] The heat treatment tank 30 defines a second receiving space, which can be a box structure with an opening at the top. The second receiving space is configured to place the carrier 10, and the heat treatment tank 30 is configured to perform heat treatment on the carrier 10. The heat treatment method can be hot air blowing or oven drying, etc. The robot arm 50 is configured to place the carrier 10 in the second receiving space and perform heat treatment on the carrier 10 through the heat treatment tank 30. On the one hand, when the first solution is deposited on the silicon wafer, the heat treatment can promote the reaction between the first passivating agent and the perovskite film to form a two-dimensional passivation layer on the surface of the perovskite film; on the other hand, after the silicon wafer is cleaned, the heat treatment can be used to dry and remove the residual cleaning solution on the surface of the silicon wafer.

[0035] The cleaning tank 40 defines a third receiving space, which may be a box structure with an opening at the top. The third receiving space contains a second solution, including a low-polarity solvent, and is configured to hold the carrier 10. Thus, the robot arm 50 can place the carrier 10 into the third receiving space of the cleaning tank 40 for cleaning with the cleaning solution. Exemplarily, the second solution may also include a cleaning agent for cleaning silicon wafers.

[0036] The robotic arm 50 is configured to grip the carrier 10, thereby enabling the carrier 10 to move between the first receiving space, the second receiving space, and the third receiving space.

[0037] In the aforementioned perovskite thin film passivation system, the silicon wafer with the formed perovskite thin film is supported by a carrier 10. A robotic arm 50 grips the carrier 10 and moves the silicon wafer. When the carrier 10 is placed in the first receiving space of the passivation tank, the first solution in the first receiving space is enriched on the silicon wafer. Then, the robotic arm 50 removes the carrier 10 and places it in a heat treatment tank 30 for heat treatment. This allows the first passivating agent in the first solution to react with the perovskite thin film, forming a passivation layer on the perovskite thin film. Afterward, the robotic arm 50 places the carrier 10 into a cleaning tank 40 for cleaning and then back into the heat treatment tank 30 for drying. This method enables batch passivation of perovskite thin films.

[0038] In some embodiments, the first passivation tank 20 is equipped with a first vibration mechanism, which is configured to drive the first solution to vibrate. When the silicon wafer is immersed in the first solution, the first vibration mechanism drives the first solution to vibrate, which can significantly improve the solubility of the low-solubility first passivating agent small molecules in the low-polarity solvent. On the other hand, it can improve the contact effect between the silicon wafer and the first passivating agent. Compared with the traditional method of spin coating followed by reaction on a hot stage, vibration during immersion treatment can improve the efficiency of the coordination passivation reaction of the perovskite film and improve the passivation quality.

[0039] For example, the first vibration mechanism can be an ultrasonic generator or a bubbler. The ultrasonic generator generates high-frequency sound waves, which in turn form tiny bubbles in the first solution, causing the first solution to vibrate due to the cavitation effect of the bubbles. The bubbler uses an air pump to introduce air or other gases into the first solution, forming bubbles, promoting gas-liquid contact, increasing solubility, and causing the first solution to vibrate.

[0040] In some embodiments, the cleaning tank 40 is equipped with a second vibration mechanism configured to drive a second solution to vibrate. The second solution includes a low-polarity solvent, and the vibration mechanism driving the second solution to vibrate can improve the cleaning effect on the silicon wafer.

[0041] For example, the second vibration mechanism can be an ultrasonic generator or a bubbler.

[0042] Optionally, the heat treatment tank 30 is also equipped with a blower and a control module, enabling the heat treatment tank 30 to perform heat treatment using hot air. The blower is configured to blow hot air into the second receiving space to increase the temperature of the silicon wafer, and the control module is configured to control the temperature and airflow of the hot air blown out by the blower.

[0043] Referring again to Figure 1, in some embodiments, the perovskite thin film passivation system further includes a replenishment device 60, comprising a first replenishment tank 61 and a second replenishment tank 62. The first replenishment tank 61 is configured to store a first solution and is in communication with a first receiving space. The first replenishment tank 61 is also configured to deliver the first solution to the first receiving space. When the amount of the first solution in the first passivation tank 20 decreases and does not meet the usage requirements, the first solution can be replenished to the first passivation tank 20 through the first replenishment tank 61.

[0044] In one feasible implementation, the first replenishment tank 61 is equipped with a first flow meter and a first control valve, the first control valve being configured to periodically deliver the first solution to the first receiving space. This ensures that the first solution in the first receiving cavity always meets usage requirements.

[0045] The second replenishment tank 62 is configured to store low-polarity solvents. The second replenishment tank 62 is connected to the first and third containment spaces and is configured to supply low-polarity solvents to at least one of the first and third containment spaces. When the amount of low-polarity solvent in the first passivation tank 20 decreases, resulting in an excessively high concentration of the first passivating agent, low-polarity solvents can be supplied to the first containment space through the second replenishment tank 62 to ensure the first solution concentration meets requirements. Furthermore, when the concentration of low-polarity solvents in the cleaning tank 40 decreases, the second replenishment tank 62 can supply low-polarity solvents to the third containment space.

[0046] In one feasible implementation, the second replenishment tank 62 is equipped with a second flow meter and a second control valve, the second control valve being configured to periodically supply low-polarity solvent to at least one of the first and third containment spaces. This ensures that the low-polarity solvent in the third containment space is always available to meet usage requirements.

[0047] Referring again to Figure 1, in some embodiments, the perovskite thin film passivation system further includes a condensation recovery device 70. The condensation recovery device 70 is connected to the heat treatment tank 30 and is configured to collect and condense the volatilized low-polarity solvent. When the heat treatment tank 30 heats the crystalline silicon, the low-polarity solvent on the silicon evaporates. To avoid wasting the low-polarity solvent, the condensation recovery device 70 can collect and condense the volatilized low-polarity solvent to prevent waste. This improves solvent utilization and avoids environmental pollution.

[0048] Referring to Figure 2, this application also provides a perovskite thin film passivation method, including the following steps S202 to S210.

[0049] S202, a silicon wafer with a perovskite thin film formed thereon is placed inside the carrier 10.

[0050] S204, the carrier 10 is placed into the first containment space in the first passivation tank 20 by the robot arm 50 for immersion treatment; the first containment space contains a first solution, the first solution including a first passivating agent and a low polarity solvent.

[0051] For example, the first solution comprises isopropanol and a propylenediamine halide salt, and the temperature of the first solution can be 20°C to 30°C, specifically, the temperature of the first solution is 25°C. The propylenediamine halide salt can be propylenediamine hydroiodate with a concentration of 1 mg / ml.

[0052] For example, the soaking time can be 10s to 30s. Specifically, the soaking time can be 20s.

[0053] S206, the robotic arm 50 removes the carrier 10 from the first passivation tank 20 and places it into the second receiving space of the heat treatment tank 30 for heat treatment, so that the first passivating agent reacts with the perovskite film to form a first passivation layer on the perovskite film. The heat treatment method can be hot air blowing or oven drying, etc.

[0054] For example, the heat treatment temperature can be 80℃ to 120℃, and the time can be 8 min to 15 min. This improves the structural stability of the passivation layer and increases the photoluminescence intensity of the film surface; the photoluminescence intensity of the passivation layer surface after passivation is approximately 10 times that before passivation. Specifically, the heat treatment temperature can be 100℃, and the heat treatment time can be 10 min.

[0055] By heat-treating the crystalline silicon with a perovskite thin film in the heat treatment tank 30, the non-polar solvent on the surface of the crystalline silicon can be dried, and the passivating agent propylene diamine hydroiodide can be reacted with the perovskite thin film to form a two-dimensional passivation layer on the surface of the perovskite thin film.

[0056] S208, the carrier 10 is removed from the heat treatment tank 30 by the robot arm 50 and placed into the third containment space of the cleaning tank 40 for cleaning treatment; the third containment space contains a second solution, which includes a low polarity solvent.

[0057] For example, the temperature of the second solution can be 20°C to 30°C, and the solvent of the second solution can be at least one selected from n-butanol, isooctane, ethyl acetate, and butyl acetate. Specifically, the temperature of the second solution is 25°C, and n-butanol is used as the solvent. Propylene diamine halide salt molecules that have not formed a two-dimensional passivation layer on the surface of the perovskite film are washed away by a cleaning process.

[0058] S210, the carrier 10 is removed from the cleaning tank 40 by the robot arm 50 and placed in the heat treatment tank 30 for drying.

[0059] For example, the drying temperature can be 80°C to 120°C, and the time can be 1 min to 5 min. This allows the liquid on the perovskite surface to evaporate quickly and enables the passivation layer on the perovskite surface to pre-crystallize, preventing it from being dissolved and washed away in the subsequent second passivation bath process. Specifically, the drying temperature can be 100°C, and the time can be 2 min.

[0060] In the above-described perovskite thin film passivation method, the silicon wafer with the perovskite thin film is supported by a carrier 10. A robotic arm 50 grips the carrier 10 and moves the silicon wafer. When the carrier 10 is placed in the first receiving space of the passivation tank, the first solution in the first receiving space is enriched in the silicon wafer. Then, the robotic arm 50 removes the carrier 10 and places it in a heat treatment tank 30 for heat treatment. This allows the first passivating agent in the first solution to react with the perovskite thin film, forming a passivation layer on the perovskite thin film. Afterward, the robotic arm 50 places the carrier 10 into a cleaning tank 40 for cleaning and then back into the heat treatment tank 30 for drying. This method enables batch passivation of perovskite thin films.

[0061] Optionally, the first passivation tank 20 is equipped with a first vibration mechanism. During the immersion process, the first vibration mechanism drives the first solution to vibrate, thereby improving the contact effect between the first solution and the crystalline silicon.

[0062] Optionally, the cleaning tank 40 is equipped with a second vibration mechanism. During the cleaning process, the second vibration mechanism drives the second solution to vibrate, thereby improving the contact effect between the second solution and the crystalline silicon.

[0063] In some embodiments, referring to FIG3, before step S204, before the carrier 10 is placed into the first receiving space in the first passivation tank 20 by the robot arm 50 for immersion treatment, the method further includes S203a and S203b.

[0064] S203a, the carrier 10 is placed into the cleaning tank 40 by the robot arm 50 for surface cleaning treatment.

[0065] S203b, the carrier 10 is removed from the cleaning tank 40 by the robot arm 50 and placed in the heat treatment tank 30 for drying.

[0066] In step S203a, the carrier 10 is cleaned to remove any unreacted first passivating agent remaining on the surface; in step S203b, the carrier 10 is dried to evaporate any residual solvent on the surface, making it easier to proceed to the next process step.

[0067] Before step S208, when the robotic arm 50 removes the carrier 10 from the heat treatment tank 30 and places it into the third receiving space of the cleaning tank 40 for cleaning, the method further includes steps S207a and S207b.

[0068] S207a, the carrier 10 is placed into the second passivation tank for immersion treatment by the robot arm 50; the second passivation tank contains a third solution, which includes a second passivating agent and a low-polarity solvent.

[0069] For example, the temperature of the third solution can be 20°C to 30°C, thereby increasing the reaction rate of perovskite surface passivation. Specifically, the temperature of the third solution is 25°C.

[0070] For example, the second passivating agent may be at least one of ethylenediamine halide, butanediamine halide, and piperazine halide.

[0071] For example, the second passivating agent may be piperazine iodide, and the concentration of the second passivating agent is 0.5 mg / mL.

[0072] For example, the immersion time can be 10s to 30s. This ensures that the perovskite surface passivation reaction occurs sufficiently while preventing over-reaction of the passivation layer, thus avoiding an excessively thick passivation layer that could affect device performance. Specifically, the immersion time can be 20s.

[0073] S207b, the carrier 10 is taken out from the second passivation tank by the robot arm 50 and placed into the second accommodating space of the heat treatment tank 30 for heat treatment, so that the second passivating agent reacts with the perovskite film to form a second passivation layer on the perovskite film.

[0074] In this embodiment, a two-stage passivation process is employed. The second passivating agent in the second passivation tank undergoes a secondary passivation reaction with the perovskite, further reducing surface defects in the passivated perovskite film and completing the passivation process.

[0075] The relevant content of each step in this embodiment can be referred to the relevant content of any of the foregoing embodiments, and will not be repeated here.

[0076] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0077] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for passivating perovskite thin films, comprising the following steps: A silicon wafer with a perovskite thin film is placed inside a carrier. The carrier is placed into the first containment space of the first passivation tank by a robotic arm for immersion treatment; the first containment space contains a first solution, the first solution including a first passivating agent and a low polarity solvent; The carrier is removed from the first passivation tank by a robotic arm and placed into the second accommodating space of the heat treatment tank for heat treatment, so that the first passivating agent reacts with the perovskite film to form a first passivation layer on the perovskite film. The carrier is removed from the heat treatment tank by a robotic arm and placed into the third containment space of the cleaning tank for cleaning; the third containment space contains a second solution, which includes a low-polarity solvent. The carrier is removed from the cleaning tank by a robotic arm and placed in a heat treatment tank for drying.

2. The perovskite thin film passivation method according to claim 1, wherein, The first passivation tank is equipped with a first vibration mechanism, and during the soaking process, the first vibration mechanism drives the first solution to vibrate.

3. The perovskite thin film passivation method according to claim 1 or 2, wherein, The cleaning tank is equipped with a second vibration mechanism, which drives the second solution to vibrate during the cleaning process.

4. The perovskite thin film passivation method according to any one of claims 1 to 3, wherein, Before the perovskite thin film passivation method involves immersing the carrier in the first receiving space of the first passivation tank using a robotic arm, the method further includes: The carrier is placed into a cleaning tank by a robotic arm for surface cleaning. The carrier is removed from the cleaning tank by a robotic arm and placed in a heat treatment tank for drying.

5. The perovskite thin film passivation method according to any one of claims 1 to 4, wherein, Before the perovskite thin film passivation method involves removing the carrier from the heat treatment tank using a robotic arm and placing it into the third receiving space of the cleaning tank for cleaning, it further includes: The carrier is placed into a second passivation tank for immersion treatment using a robotic arm; the second passivation tank contains a third solution, which includes a second passivating agent and a low-polarity solvent; The carrier is removed from the second passivation tank by a robotic arm and placed into the second receiving space of the heat treatment tank for heat treatment, so that the second passivating agent reacts with the perovskite film to form a second passivation layer on the perovskite film.

6. A perovskite thin film passivation system applied to the perovskite thin film passivation method according to any one of claims 1 to 5, wherein, The perovskite thin film passivation system includes: The carrier is configured to support a silicon wafer on which a perovskite thin film is formed; A first passivation tank defines a first containment space containing a first solution comprising a first passivating agent and a low-polarity solvent, the first containment space being configured to hold the carrier. A heat treatment tank defining a second receiving space configured to hold the carrier, the heat treatment tank being configured to perform heat treatment on the carrier; A cleaning tank defining a third accommodating space containing a second solution comprising a low-polarity solvent, the third accommodating space being configured to hold the carrier; and A robotic arm is configured to grip the carrier, such that the carrier is configured to move between the first receiving space, the second receiving space, and the third receiving space.

7. The perovskite thin film passivation system according to claim 6, wherein, The first passivation tank is equipped with a first vibration mechanism, which is configured to drive the first solution to vibrate.

8. The perovskite thin film passivation system according to claim 7, wherein, The first vibration mechanism is an ultrasonic generator or a bubbler.

9. The perovskite thin film passivation system according to any one of claims 6 to 8, wherein, The cleaning tank is equipped with a second vibration mechanism, which is configured to drive the second solution to vibrate.

10. The perovskite thin film passivation system according to claim 9, wherein, The second vibration mechanism is an ultrasonic generator or a bubbler.

11. The perovskite thin film passivation system according to any one of claims 6 to 10, wherein, The heat treatment tank is also equipped with a blower and a control module. The blower is configured to blow hot air into the second accommodating space, and the control module is configured to control the temperature and airflow of the hot air blown out by the blower.

12. The perovskite thin film passivation system according to any one of claims 6 to 11, wherein, The perovskite thin film passivation system also includes: A replenishment device includes a first replenishment tank and a second replenishment tank; the first replenishment tank is configured to store the first solution, communicate with the first containment space, and is configured to deliver the first solution to the first containment space; the second replenishment tank is configured to store the low-polarity solvent, communicate with the first containment space and the third containment space, and the second replenishment tank is further configured to deliver the low-polarity solvent to at least one of the first containment space and the third containment space.

13. The perovskite thin film passivation system according to claim 12, wherein, The first replenishment tank is equipped with a first flow meter and a first control valve, the first control valve being configured to periodically deliver the first solution to the first containment space.

14. The perovskite thin film passivation system according to claim 12 or 13, wherein, The second replenishment tank is equipped with a second flow meter and a second control valve, the second control valve being configured to periodically deliver the low-polarity solvent to at least one of the first and third containment spaces.

15. The perovskite thin film passivation system according to any one of claims 6 to 14, wherein, The perovskite thin film passivation system also includes: A condensation recovery device, which is connected to the heat treatment tank, is configured to collect volatile low-polarity solvents and collect them after condensation.

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