Cavity structure for microwave plasma chemical vapor deposition apparatus
By designing a novel cavity structure, the problems of double fireballs and uneven growth in traditional MPCVD equipment were solved, resulting in higher product yield and greater growth capacity over a larger area.
CN122169060APending Publication Date: 2026-06-09WAVE POWER TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WAVE POWER TECH INC
- Filing Date
- 2024-12-06
- Publication Date
- 2026-06-09
AI Technical Summary
Technical Problem
The disc-shaped cavity structure of traditional MPCVD equipment is prone to causing double fireball phenomenon and inconsistent growth zone height, resulting in product stress cracking and uneven growth rate.
Method used
A novel cavity structure is designed with a convex inner top surface and a concave inner bottom surface, forming a cavity similar to an inverted funnel. The microwave field forms a single strong field region below the stage, avoiding the formation of a second strong field region above. The stage is located below the inner top surface.
Benefits of technology
It avoids the double fireball phenomenon, improves the uniformity of the growth zone, reduces product stress cracking, improves product yield, and enables the growth of products with a larger area.
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Smart Images
Figure CN122169060A_ABST
Abstract
The present application provides a cavity structure for a microwave plasma chemical vapor deposition device, which is used to form a microwave field with a microwave. The cavity structure comprises a housing and a substrate table. The housing comprises an inner bottom surface, an inner top surface, and an inner wall surface. The inner top surface and the inner bottom surface are spaced apart from each other and face each other. The diameter of the inner bottom surface is greater than the diameter of the inner top surface, and the inner top surface is convex toward the inner bottom surface. The inner wall surface is connected to the inner top surface and the inner bottom surface at both ends, thereby forming a chamber between the inner bottom surface, the inner top surface, and the inner wall surface. The microwave field is located in the chamber. The substrate table is arranged in the chamber, and the substrate table has a substrate surface facing the inner top surface. The cavity structure of the present application can avoid causing the double-plasma phenomenon and reduce the influence on the microwave plasma chemical vapor deposition reaction.
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