Sensor device

Abstract

The invention relates to a sensor device (1) for measuring a pressure (P); having at least one base body (10) and at least one sensor material (20); the base body is locally shaped as a base body diaphragm (11), which is designed to receive the pressure to be measured, which is deflectable under the action of the pressure; the sensor material is locally arranged on the base body diaphragm, which generates a piezoelectric charge (Q20+, Q20-) by the deflection of the base body diaphragm, and the amount of the generated piezoelectric charge is proportional to the size of the measured pressure; the sensor device has at least one compensation material (30), which is locally arranged on the base body; the sensor material generates a pyroelectric charge (P20+, P20-) under the action of a temperature change; the compensation material generates a pyroelectric charge (P30+, P30-) under the action of a temperature change; and the pyroelectric charge generated by the compensation material compensates the pyroelectric charge generated by the sensor material.

Description

Technical Field

[0001] This invention relates to a sensor device. Background Technology

[0002] Sensor devices are well-known. They are widely used to measure pressure, temperature, and other parameters.

[0003] Known pressure sensor devices measure pressure based on the piezoelectric principle. These devices utilize piezoelectric materials, such as quartz (SiO2) and gallium phosphate (GaPO4), which generate piezoelectric charges under the pressure to be measured. These charges are generated on the surface of the piezoelectric material and captured by electrodes. The amount of piezoelectric charge generated is proportional to the magnitude of the pressure being measured.

[0004] Piezoelectric materials such as SiO2 and GaPO4 possess very high profile stiffness. Due to this high profile stiffness, piezoelectric sensor devices exhibit high natural frequencies greater than 500 kHz. This high natural frequency makes piezoelectric sensor devices particularly suitable for dynamic pressure measurement. Typically, the maximum measurement frequency is one-third of the natural frequency.

[0005] The applicant markets this piezoelectric sensor device for dynamic pressure measurement under the designation Model 603C. In Model 603C, the piezoelectric material, viewed axially, is spaced apart from a diaphragm by a base plate in the form of multiple discs. The pressure to be measured acts as a force on the piezoelectric material through the diaphragm and the base plate. Because piezoelectric materials such as SiO2 and GaPO4 are fragile and may break under localized pressure peaks, the base plate ensures a uniform distribution of pressure across the piezoelectric material. The maximum measurement frequency of Model 603C is approximately 200 kHz. The technical specifications of Model 603C are recorded in datasheet 603C_003 288e11.22.

[0006] Users now expect to further increase the measurement frequency of sensor devices used for measuring pressure. Summary of the Invention

[0007] The purpose of this invention is to provide a sensor device that has a measurement frequency significantly exceeding 200 kHz for pressure measurement.

[0008] The objective of this invention is achieved through the technical solution of this invention.

[0009] This invention relates to a sensor device designed for measuring pressure; having at least one substrate and at least one sensing material; the substrate is partially formed into a substrate diaphragm designed to receive the pressure to be measured, and the substrate diaphragm is deflectable under pressure; wherein the sensing material is partially disposed on the substrate diaphragm, the sensing material generating piezoelectric charge through the deflection of the substrate diaphragm, and the amount of piezoelectric charge generated is proportional to the magnitude of the measured pressure; the sensor device has at least one compensation material partially disposed on the substrate; the sensing material generates pyroelectric charge under temperature change; the compensation material generates pyroelectric charge under temperature change; and the pyroelectric charge generated by the compensation material compensates for the pyroelectric charge generated by the sensing material.

[0010] Advantageous extensions of the invention are given below. Attached Figure Description

[0011] The present invention will now be described in detail by way of example with reference to the accompanying drawings.

[0012] Figure 1 A top view of a portion of a first embodiment of the sensor device 1 is shown, which has a pressure sensor 1P for measuring pressure P and a compensator 1K.

[0013] Figure 2 It shows according to Figure 1 A cross-sectional view of a portion of the sensor device 1 along the cutting line AA.

[0014] Figure 3 It shows according to Figure 1 and Figure 2 A top view of a portion of a second embodiment of the sensor device 1, which has a set of pressure sensors 1P and a set of compensators 1K.

[0015] Figure 4 It shows according to Figures 1 to 3 The sensor device 1 generates curves of pyroelectric charges P20+, P30+, P20-, and P30- under the action of temperature change ΔT.

[0016] Figure 5 It shows according to Figure 1 and Figure 2 A schematic circuit diagram of a portion of a first embodiment of a sensor device 1 having a pressure sensor 1P and a compensator 1K, including a lead 5, a conversion unit 6, and an evaluation unit 7.

[0017] Figure 6 It shows according to Figure 3A schematic circuit diagram of a portion of a second embodiment of a sensor device 1 having a set of pressure sensors 1P and a set of compensators 1K, including leads 5, a conversion unit 6 and an evaluation unit 7.

[0018] The same reference numerals denote the same objects in the accompanying drawings.

[0019] List of reference numerals

[0020] 1: Sensor device

[0021] 1P: Pressure sensor

[0022] 5: Lead wire

[0023] 6: Conversion Unit

[0024] 7: Evaluation Unit

[0025] 10: Matrix

[0026] 11: Matrix membrane

[0027] D11: Diameter of the substrate membrane

[0028] F11: Front surface of the substrate membrane

[0029] F12: Back surface of the substrate membrane

[0030] T11: Thickness of the substrate film

[0031] 12: Matrix opening

[0032] 13: Bearing layer

[0033] 14: Boundary Layer

[0034] 15: Stop Layer

[0035] 20: Sensing Materials

[0036] D20: Base surface of the sensing material

[0037] T20: Thickness of the sensing material

[0038] 21: First sensor electrode

[0039] D21: Base surface of the first sensor electrode

[0040] 22: First sensor contact point

[0041] 23: Second sensor electrode

[0042] D23: Base surface of the second sensor electrode

[0043] 24: Second sensor contact point

[0044] 25: First sensor group wires

[0045] 26: Contact point of the first sensor group

[0046] 27: Second sensor group wiring

[0047] 28: Second sensor group contact point

[0048] 30: Compensation materials

[0049] D30: Base surface of the compensation material

[0050] T30: Thickness of compensation material

[0051] 31: First compensator electrode

[0052] 32: First compensator contact point

[0053] 33: Second compensator electrode

[0054] 34: Second compensator contact point

[0055] 35: First compensator group conductor

[0056] 36: Contact point of the first compensator group

[0057] 37: Second compensator group conductor

[0058] 38: Contact point of the second compensator group

[0059] 51: First charge lead

[0060] 52: Second charge lead

[0061] 61: Operational amplifier

[0062] i-: Inverting input terminal

[0063] i+: Non-inverting input

[0064] o: Signal output terminal

[0065] 62: Feedback capacitor

[0066] C62: Capacitance of the feedback capacitor

[0067] 63: First charge input contact

[0068] 64: Grounding potential

[0069] 65: Second charge input contact

[0070] 66: First signal output contact

[0071] 67: First grounding potential output contact

[0072] 71: First signal wire

[0073] 72: First grounding potential conductor

[0074] 73: Interface

[0075] 74: Computing Unit

[0076] 75: Input Unit

[0077] 76: Output Unit

[0078] AP: Evaluation Procedure

[0079] B – B: Section line

[0080] DXY: First horizontal distance

[0081] f1: Natural frequency

[0082] f : Measurement frequency

[0083] f61: Operating frequency

[0084] MD: First ground potential data element

[0085] MS: First ground potential signal

[0086] mt: Time point of the first grounding potential

[0087] mv: First grounding potential value

[0088] P: Pressure

[0089] P+-: Pyroelectric charge

[0090] P20+: First pyroelectric charge

[0091] P20-: Second pyroelectric charge

[0092] p30+: First pyroelectric charge

[0093] P30-: Second pyroelectric charge

[0094] PD: Pressure Data Element

[0095] PS: Pressure signal

[0096] pt: Pressure time point

[0097] pv: Pressure value

[0098] Q20+: First piezoelectric charge

[0099] Q20-: Second piezoelectric charge

[0100] σ: Sensitivity

[0101] T: Temperature

[0102] X: Horizontal axis

[0103] XY: Horizontal plane

[0104] Y: Inclined axis

[0105] Z: Vertical axis

[0106] Z5: Wave Impedance

[0107] Z6: Matching impedance

[0108] Z61: Input impedance Detailed Implementation

[0109] Sensor device 1 has the function of measuring pressure P.

[0110] The sensor device 1 has at least one pressure sensor 1P for measuring pressure P and at least one compensator 1K.

[0111] In addition, according to Figure 5 and Figure 6 The sensor device 1 also has at least one lead 5, at least one conversion unit 6 and at least one evaluation unit 7.

[0112] exist Figures 1 to 3 In the diagram, sensor device 1 is shown in a three-dimensional coordinate system with a horizontal axis X, an inclined axis Y, and a vertical axis Z. The three axes X, Y, and Z are perpendicular to each other. The horizontal axis X and the inclined axis Y form a horizontal plane XY. Figure 1 and Figure 3 A top view of sensor device 1 in the horizontal XY plane is shown. Figure 2 A cross-sectional view of sensor device 1 is shown.

[0113] Matrix 10

[0114] The sensor device 1 has at least one base 10. The base 10 has the function of receiving the pressure P to be measured.

[0115] The substrate 10 is made of an electrically insulating material, such as silicon or glass. Silicon has a resistivity greater than or equal to 10 ohms at room temperature (20°C). 7 Ωm. The resistivity of glass at 20℃ is greater than or equal to 10. 11 Ωm.

[0116] The substrate 10 has a front side and a rear side. A bearing surface is formed on the front side of the substrate 10. The bearing surface is located in the horizontal plane XY. The bearing surface is less than or equal to 3 mm. 3 mm, preferably less than or equal to 2 mm 2 mm. The substrate 10 forms a substrate opening 12 on the rear side.

[0117] Preferably, the substrate 10 is silicon on insulator (SOI) and has the following functional layers: - The carrier layer 13, formed of silicon, has a thickness in the range of 200 to 500 µm along the vertical axis Z, preferably 400 µm. The carrier layer 13 has a carrier function for the components of the sensor device 1.

[0118] - Boundary layer 14, formed of silicon, has a thickness ranging from 100 to 2 µm along the vertical axis Z, preferably 50 µm, and more preferably 5 µm. Boundary layer 14 functions to locally form the substrate film 11. Boundary layer 14 defines the substrate 10 in the horizontal plane XY.

[0119] - A stop layer 15, having a thickness of 1 µm along the vertical axis Z, is disposed between the load-bearing layer 13 and the boundary layer 14 along the vertical axis Z. The stop layer 15 is formed of an oxide material and has a strength greater than or equal to 10 at 20°C. 12 The resistivity is Ωm. Therefore, the stop layer 15 has the function of electrically insulating the boundary layer 14 relative to the carrier layer 13. The stop layer 15 also has the function of stopping the etching when the substrate opening 12 is made in the substrate 10 by chemical etching. Here, on the back side of the substrate 10, silicon is etched away along the vertical axis Z until the stop layer 15.

[0120] The substrate diaphragm 11 is designed to receive the pressure P to be measured. The substrate diaphragm 11 has two surfaces F11 and F12. These two surfaces F11 and F12 include a front surface F11 and a rear surface F12. The front surface F11 is located on the front side of the substrate 10 in the horizontal plane XY. The pressure P acts on the front surface F11 along the vertical axis Z. The front surface F11 faces the direction in which the pressure P acts. The rear surface of the substrate diaphragm 11 defines a substrate opening 12 on the rear side of the substrate 10. Under the action of the pressure P, the substrate diaphragm 11 can deflect along the vertical axis Z into the substrate opening 12.

[0121] The thickness T11 of the substrate diaphragm 11 is less than or equal to 20 µm, preferably less than or equal to 10 µm, and more preferably less than or equal to 5 µm. The diameter D11 of the substrate diaphragm 11 is less than or equal to 300 µm, preferably less than or equal to 200 µm, and more preferably less than or equal to 100 µm. The ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is selected such that the sensor device 1 has a natural frequency f1 greater than or equal to 1 MHz. Advantageously, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is 1.7. 10- 2 Up to 5.0 10- 2 Within this range. For example, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 will result in the natural frequency f1 as follows: - The thickness T11 of the substrate membrane 11 is 5 µm, and the diameter D11 of the substrate membrane 11 is 300 µm, resulting in a thickness T11 to diameter D11 ratio of 1.7. 10- 2 And its inherent frequency f1 is greater than 1 MHz.

[0122] - The thickness T11 of the substrate membrane 11 is 5µm, and the diameter D11 of the substrate membrane 11 is 200µm, therefore the ratio of the thickness T11 to the diameter D11 of the substrate membrane 11 is 2.5. 10- 2 And its inherent frequency f1 is greater than 2.5 MHz.

[0123] - The thickness T11 of the substrate membrane 11 is 5µm, and the diameter D11 of the substrate membrane 11 is 100µm, therefore the ratio of the thickness T11 to the diameter D11 of the substrate membrane 11 is 5.0. 10- 2 And its inherent frequency f1 is greater than 10 MHz.

[0124] Unlike the 603C type piezoelectric sensor device with a metal diaphragm made of 17-4PH stainless steel, the substrate diaphragm 11 according to the present invention is made of silicon. With a density of 7.8 g / cm³, 3 Compared to 17-4PH stainless steel, silicon has a density of 2.3 g / cm³. 3 Therefore, the substrate diaphragm 11 according to the present invention is more than three times lighter, which further improves the inherent frequency f1 of the sensor device 1.

[0125] Sensing materials 20

[0126] The sensor device 1 has at least one sensing material 20. The sensing material 20 has the function of generating a measurement value for the pressure P to be measured.

[0127] The sensing material 20 is piezoelectric, including quartz (SiO2), gallium orthophosphate (GaPO4), and calcium gallium germanate (Ca3Ga2Ge4O). 14 Or CGG), lanthanum gallium silicate (La3Ga5SiO) 14Or LGS), tourmaline, aluminum nitride (AlN), zirconium titanate (PZT), aluminum nitride (Al(1-x)Sc(x)N, where x=0...0.4), potassium sodium niobate (K(x)Na(1-x)NbO3, where x=0.2...0.5), etc.

[0128] Sensing material 20 is disposed on substrate 10. Preferably, sensing material 20 is disposed on the front side of substrate 10, in at least one region of substrate diaphragm 11.

[0129] Preferably, the sensing material 20 is locally disposed on the front surface F11 of the substrate diaphragm 11. The sensing material 20 is formed as a layer extending in the horizontal plane XY. In the horizontal plane XY, the sensing material 20 has a base surface D20. The base surface D20 is greater than or equal to the diameter D11 of the substrate diaphragm 11. Along the vertical axis Z, the sensing material 20 has a constant thickness T20. The thickness T20 is less than or equal to 10 µm; preferably, the thickness T20 is less than or equal to 5 µm; preferably, the thickness T20 is less than or equal to 1 µm.

[0130] In the 603C type piezoelectric sensor device, the sensing material exists in the form of three disks, each with a thickness of 0.2 mm and a diameter of 3.5 mm. Viewed axially, these disks are arranged spaced apart from the diaphragm by a metal base plate with a thickness of 0.6 mm and a diameter of 3.5 mm. Another difference from the 603 type piezoelectric sensor device is that, according to the invention, the sensing material 20 is arranged as a thin layer on the substrate diaphragm 11. The thickness T20 of the thin layer is less than or equal to 10 µm. Therefore, there are no disks with sensing material, and the metal base plate is also eliminated, thereby reducing the weight of the sensor device 1 according to the invention. Furthermore, since the natural frequency f1 is inversely proportional to the weight of the sensor device 1, the natural frequency f1 of the sensor device 1 is increased by eliminating the disks with sensing material and the metal base plate.

[0131] Under the action of the pressure P to be measured, the sensing material 20 generates piezoelectric charges Q20+ and Q20-, which are used as measured values. The pressure P acts unilaterally along the vertical axis Z on the front surface F11 of the substrate diaphragm 11, causing the substrate diaphragm 11 to deflect. Figure 2 In the diagram, pressure P is schematically represented by an arrow. Through the deflection of the substrate diaphragm 11, the piezoelectric material 20 generates piezoelectric charges Q20+ and Q20-. The amounts of the generated piezoelectric charges Q20+ and Q20- are proportional to the magnitude of the measured pressure P. The continuous operating temperature of the sensing material 20 is in the range of -40°C to +500°C.

[0132] Piezoelectric charges Q20+ and Q20- are generated on multiple surfaces of the sensing material 20, which extend parallel to the horizontal plane XY. The piezoelectric charges Q20+ and Q20- include a first piezoelectric charge Q20+ and a second piezoelectric charge Q20-. Figure 2 In the cross-section, a first piezoelectric charge Q20+ is generated on the surface of the sensing material 20 facing away from the substrate diaphragm 11, and a second piezoelectric charge Q20- is generated on the surface of the sensing material 20 facing the substrate diaphragm 11. As described below, the first piezoelectric charge Q20+ is preferably converted into a pressure signal PS, while the second piezoelectric charge Q20- is preferably used as a ground potential signal MS.

[0133] The sensitivity σ of sensor device 1 is very important. Sensitivity σ is the ratio of the measured value of the pressure P to the input value. Sensitivity σ decreases cubically as the thickness T11 of the substrate diaphragm 11 increases. Furthermore, it decreases quadratically as the diameter D11 of the substrate diaphragm 11 decreases. Therefore, the sensitivity σ of sensor device 1 decreases as the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 increases. - The thickness T11 of the substrate membrane 11 is 5 µm, the diameter D11 of the substrate membrane 11 is 300 µm, and the resulting ratio of the thickness T11 to the diameter D11 of the substrate membrane 11 is 1.7. 10- 2 The sensitivity σ of sensor device 1 is found to be approximately 5 pC / bar. - The thickness T11 of the substrate membrane 11 is 5 µm, the diameter D11 of the substrate membrane 11 is 200 µm, and the resulting ratio of the thickness T11 to the diameter D11 of the substrate membrane 11 is 2.5. 10- 2 The sensitivity σ of sensor device 1 was found to be approximately 0.5 pC / bar. - The thickness T11 of the substrate membrane 11 is 5µm, the diameter D11 of the substrate membrane 11 is 100µm, and the ratio of the thickness T11 to the diameter D11 of the substrate membrane 11 is 5.0. 10- 2 The sensitivity σ of sensor device 1 was found to be approximately 0.05 pC / bar.

[0134] Compensation materials 30

[0135] The sensor device 1 has at least one compensation material 30. The compensation material 30 has the function of compensating for the pyroelectric effect of the sensing material 20 of the sensor device 1.

[0136] Some sensing materials 20, such as CGG, LGS, tourmaline, AlN, PZT, etc., exhibit direct and / or indirect pyroelectric effects; that is, a temperature change ΔT leads to the generation of pyroelectric charges P20+ and P20-. The generation of pyroelectric charges P20+ and P20- occurs on the same surface in the sensing material 20 as the generation of piezoelectric charges Q20+ and Q20-. Therefore, the measurement of pressure P is affected by any temperature change ΔT. Based on... Figures 1 to 3 In the embodiment of sensor device 1, the sensing material 20 has a pyroelectric effect.

[0137] The compensation material 30 is preferably formed from the same materials as the sensing material 20, such as CGS, LGS, tourmaline, AlN, PZT, etc. Figure 4 The curves showing the generation of pyroelectric charges P20+, P30+, P20-, and P30- with temperature change ΔT are shown. The horizontal axis represents temperature T, within the range of -40℃ to +500℃ of the continuous operating temperature of sensing material 20 and compensation material 30. The vertical axis represents pyroelectric charges P+-. The amount of generated pyroelectric charges P20+, P30+, P20-, and P30- is proportional to the size of the basal surface D20 of sensing material 20 and the size of the basal surface D30 of compensation material 30. For a temperature change ΔT, the curves generating pyroelectric charges P20+, P30+, P20-, and P30- are, for example, S-shaped. The slope of the curves represents the sensitivity of sensing material 20 and compensation material 30 to the pyroelectric effect. This sensitivity is in the range of 0.1 pC / ℃ to 0.5 pC / ℃.

[0138] Compensating material 30 is disposed on substrate 10. Preferably, compensating material 30 is disposed in at least one region on the front side of substrate 10. Preferably, compensating material 30 is disposed outside substrate diaphragm 11. Compensating material 30 is formed as a layer extending in horizontal plane XY. In horizontal plane XY, compensating material 30 has a base surface D30. Preferably, the base surface D30 is the same size as the base surface D20 of sensing material 20. Compensating material 30 has a constant thickness T30 along vertical axis Z. Preferably, the thickness T30 of compensating material 30 is the same size as the thickness T20 of sensing material 20. Thickness T30 is less than or equal to 10 µm, thickness T30 is preferably less than or equal to 5 µm, and thickness T30 is preferably less than or equal to 1 µm.

[0139] Since the compensation material 30 is disposed outside the substrate diaphragm 11, the pressure P to be measured cannot act on the compensation material 30. Because the substrate 10 does not deflect under the pressure P, the compensation material 30 does not generate piezoelectric charge as a measurement value. Preferably, the sensing material 20 and the compensation material 30 are constructed identically. Preferably, the size of the base surface D20 of the sensing material 20 is equal to the size of the base surface D30 of the compensation material 30. Preferably, the ratio of the size of the base surface D20 of the sensing material 20 to the size of the base surface D30 of the compensation material 30 is known.

[0140] Similar to how the sensing material 20 generates pyroelectric charges P20+, P20 on multiple surfaces extending parallel to the horizontal plane XY, the compensation material 30 also generates pyroelectric charges P30+, P30- on multiple surfaces extending parallel to the horizontal plane XY. The pyroelectric charges P20+, P30+, P20-, and P30- include first pyroelectric charges P20+, P30+ and second pyroelectric charges P20-, P30-. Figure 2 In the cross-section, for the sensing material 20, a first pyroelectric charge P20+ is generated on the surface of the sensing material 20 facing away from the substrate 11, and a second pyroelectric charge P20- is generated on the surface of the sensing material 20 facing the substrate 11. For the compensation material 30, a first pyroelectric charge P30+ is generated on the surface of the compensation material 30 facing away from the substrate 10, and a second pyroelectric charge P30- is generated on the surface of the compensation material 30 facing the substrate 10.

[0141] Pressure sensor 1P

[0142] The sensor device 1 has multiple sensor electrodes 21 and 23. The sensor electrodes 21 and 23 have the function of extracting piezoelectric charges Q20+ and Q20- from the surface of the sensing material 20.

[0143] Sensor electrodes 21 and 23 are arranged on the surface region of the sensing material 20 where piezoelectric charges Q20+ and Q20- are generated. Sensor electrodes 21 and 23 include a first sensor electrode 21 and a second sensor electrode 23. Sensor electrodes 21 and 23 are made of conductive materials, such as silver (Ag), gold (Au), platinum (Pt), etc.

[0144] exist Figure 2In the cross-section, the first sensor electrode 21 is disposed on the surface of the sensing material 20 facing away from the substrate diaphragm 11 and captures a first piezoelectric charge Q20+. The second sensor electrode 23 is disposed on the surface of the sensing material 20 facing the substrate diaphragm 11 and captures a second piezoelectric charge Q20-. Each of the two sensor electrodes 21 and 23 forms a layer extending parallel to the horizontal plane XY. Parallel to the horizontal plane XY, the first sensor electrode 21 has a first sensing base surface D21, and the second sensor electrode 23 has a second sensing base surface D23. Along the vertical axis Z, each of the two sensor electrodes 21 and 23 has a constant thickness of less than or equal to 200 nm.

[0145] Compared to the 603C type piezoelectric sensor device (whose diaphragm diameter is 5.5 mm), the substrate diaphragm 11 according to the invention is approximately an order of magnitude smaller. The substrate diaphragm 11 is miniaturized. On the surface of the 603C type diaphragm, there is space to accommodate more than one hundred substrate diaphragms 11 according to the invention. The substrate diaphragm 11, the sensing material 20 disposed thereon, and the sensor electrodes 21, 23 disposed on the surface of the sensing material 20 form a miniaturized pressure sensor 1P, which not only generates piezoelectric charges Q20+, Q20- in response to the pressure to be measured P, but also has sensor electrodes 21, 23 to extract these piezoelectric charges Q20+, Q20- from the surface of the sensing material 20.

[0146] The profile stiffness of the substrate diaphragm 11 is not constant along its diameter D11. In the central region of the substrate diaphragm 11 along the vertical direction Z, the profile stiffness is constant, but it increases in the edge regions transitioning to the stop layer 15 and the support layer 13. As the profile stiffness increases in the edge regions of the substrate diaphragm 11, the sensitivity σ of the sensor device 1 decreases in these regions, and consequently, the generation of piezoelectric charges Q20+ and Q20- also decreases. This decrease in the sensitivity σ of the sensor device 1 in the edge regions of the substrate diaphragm 11 interferes with the measurement of pressure P. To avoid this decrease in the sensitivity σ of the sensor device 1 in the edge regions of the substrate diaphragm 11, it is preferable not to intercept the first piezoelectric charge Q20+ in these regions at all; this first piezoelectric charge Q20+ is preferably used as the pressure signal PS. For this reason, the diameter of the first sensing base surface D21 used to intercept the first piezoelectric charge Q20+ is smaller than the diameter D11 of the substrate diaphragm 11. Preferably, the first sensing base surface D21 is less than or equal to 80% of the diameter D11 of the substrate diaphragm 11, and more preferably less than or equal to 60%.

[0147] Conversely, the diameter of the second sensing base surface D23 used to intercept the second piezoelectric charge Q20- is preferably greater than or equal to the diameter D11 of the substrate diaphragm 11, and the second piezoelectric charge is preferably used as a ground potential signal MS.

[0148] The sensor device 1 has multiple sensor contact points 22 and 24. The sensor contact points 22 and 24 have the function of providing electrical contact between the sensor electrodes 21 and 23 and the lead wire 5.

[0149] Sensor contact points 22 and 24 are made of conductive materials such as Ag, Au, and Pt.

[0150] Sensor contact points 22 and 24 include a first sensor contact point 22 and a second sensor contact point 24. The first sensor contact point 22 is disposed on and electrically contacts the first sensor electrode 21, and the second sensor contact point 24 is disposed on and electrically contacts the second sensor electrode 23. Each of the two sensor contact points 22 and 24 has a planar extension parallel to the horizontal plane XY, and this planar extension is designed to be large enough to achieve electrical contact, such as thermosonic-spherical-wedge bonding, ultrasonic-wedge-wedge bonding, etc.

[0151] The substrate diaphragm 11, the sensing material 20 disposed on the front surface F11 of the substrate diaphragm 11, and the sensor electrodes 21 and 23 disposed on the surface of the sensing material 20 form a structure according to... Figures 1 to 3 The pressure sensor 1P is an embodiment of the sensor device 1. The piezoelectric charges Q20+ and Q20- are measured values ​​of the pressure sensor 1P. The continuous operating temperature of the pressure sensor 1P is in the range of -40°C to +500°C.

[0152] Compensator 1K

[0153] The sensor device 1 has multiple compensator electrodes 31 and 33. The compensator electrodes 31 and 33 have the function of intercepting pyroelectric charges P30+ and P30- from the surface of the compensating material 30. The first sensor electrode 21 intercepts the first pyroelectric charge P20+, and the second sensor electrode 23 intercepts the second pyroelectric charge P20-.

[0154] The compensator electrodes 31 and 33 are arranged on the surface regions of the compensator material 30 where pyroelectric charges P30+ and P30- are generated. The compensator electrodes 31 and 33 include a first compensator electrode 31 and a second compensator electrode 33. The compensator electrodes 31 and 33, like the sensor electrodes 21 and 23, are made of conductive materials such as Ag, Au, and Pt.

[0155] exist Figure 2In the cross-section, the first compensator electrode 31 is disposed on the surface of the compensator material 30 facing away from the substrate 10 and intercepts the first pyroelectric charge P30+. The second compensator electrode 33 is disposed on the surface of the compensator material 30 facing the substrate 10 and intercepts the second piezoelectric charge P30-. Each of the two compensator electrodes 31 and 33 forms a layer extending parallel to the horizontal plane XY. Along the vertical axis Z, each of the two compensator electrodes 31 and 33 has a constant thickness of less than or equal to 200 nm.

[0156] In the sensing material 20, pyroelectric charges P20+ and P20- and piezoelectric charges Q20+ and Q20- are captured by the sensor electrodes 21 and 23.

[0157] Preferably, the sensor electrodes 21 and 23 and the compensator electrodes 31 and 33 are constructed identically. Preferably, the area of ​​the sensor electrodes 21 and 23 is equal to the area of ​​the compensator electrodes 31 and 33. Preferably, the ratio of the area of ​​the sensor electrodes 21 and 23 to the area of ​​the compensator electrodes 31 and 33 is known.

[0158] The sensor device 1 has multiple compensator contacts 32 and 34. The compensator contacts 32 and 34 have the function of providing electrical contact between the compensator electrodes 31 and 33 and the lead wire 5.

[0159] Similar to sensor contacts 22 and 24, compensation contacts 32 and 34 are made of conductive materials such as Ag, Au, and Pt.

[0160] The compensator contacts 32 and 34 include a first compensator contact 32 and a second compensator contact 34. The first compensator contact 32 is disposed on and electrically contacts the first compensator electrode 31. The second compensator contact 34 is disposed on and electrically contacts the second compensator electrode 33. Each of the two compensator contacts 32 and 34 has a planar extension parallel to the horizontal plane XY, which is designed to be large enough to achieve electrical contacts such as thermosonic-spherical-wedge bonding and ultrasonic-wedge-wedge bonding.

[0161] The substrate 10 contains a region with compensation material 30, the compensation material 30 is arranged on the substrate 10, and the compensator electrodes 31 and 33 are arranged on the surface of the compensation material 30, forming a structure according to... Figures 1 to 3 The compensator 1K is used in the embodiment of the sensor device 1. The continuous operating temperature of the compensator 1K is in the range of -40 °C to +500 °C.

[0162] Advantageously, the compensator 1K is positioned at a first horizontal distance DXY less than or equal to 2 mm from the pressure sensor 1P. This small first horizontal distance DXY ensures that the temperature change ΔT acts equally on the sensing material 20 of the pressure sensor 1P and the compensating material 30 of the compensator 1K, generating pyroelectric charges P20+ and P20- in both the sensing material 20 and the compensating material 30.

[0163] Advantageously, the sensing material 20 generates a large number of piezoelectric charges Q20+ and Q20- under pressure P, and a large number of pyroelectric charges P20+ and P20- under temperature change ΔT. For a measurement frequency f that is at most 1 / 3 of the natural frequency f1 greater than or equal to 1 MHz... The sensing material generates 10 per second. 6 Two piezoelectric charges, Q20+ and Q20-, are generated simultaneously by the sensing material 20 per second, producing 10 piezoelectric charges. 6 There are pyroelectric charges P20+ and P20-. The compensation material 30 generates a large number of pyroelectric charges P30+ and P30- under the influence of a temperature change ΔT. For a measurement frequency f1 that is at most 1 / 3 of the natural frequency f1 (greater than or equal to 1 MHz). Compensation material 30 generates 10 per second 6 There are pyroelectric charges P30+ and P30-. For each pyroelectric charge P20+ and P20- of the sensing material 20, there is a corresponding pyroelectric charge P30+ and P30- of the compensation material 30 in time.

[0164] Pressure sensor 1P group

[0165] According to the second embodiment, the sensor device 1 has a substrate 10, which has a plurality of substrate diaphragms 11.

[0166] Preferably, a plurality of substrate diaphragms 11 are arranged on the front side of the substrate 10 in the horizontal plane XY. The pressure to be measured P acts on the front surface F11 of the plurality of substrate diaphragms 11 along the vertical direction Z, causing the plurality of substrate diaphragms 11 to deflect. On each of the plurality of substrate diaphragms 11, a sensing material 20 is arranged in at least one region of the front surface F11 of the substrate diaphragm 11. Due to the deflection of the substrate diaphragms 11, the sensing material 20 generates piezoelectric charges Q20+ and Q20-. On each of the plurality of substrate diaphragms 11, a first sensor electrode 21 is arranged on the surface of the sensing material 20 facing away from the substrate diaphragm 11 and intercepts the first piezoelectric charge Q20+. A second sensor electrode 23 is arranged on the surface of the sensing material 20 facing the substrate diaphragm 11 and intercepts the second piezoelectric charge Q20-.

[0167] According to the second embodiment, the sensor device 1 has a plurality of sensor group wires 25, 27. The sensor group wires 25, 27 have the function of collecting piezoelectric charges Q20+ and Q20-.

[0168] The sensor assembly wires 25 and 27 are made of conductive materials such as Ag, Au, and Pt.

[0169] Sensor wires 25 and 27 are arranged in regions on two surfaces of the sensing material 20. Sensor wires 25 and 27 include a first sensor wire 25 and a second sensor wire 27. The first sensor wire 25 is electrically in contact with the first sensor electrode 21 and connected in series with it. The second sensor wire 27 is electrically in contact with the second sensor electrode 23 and connected in series with it.

[0170] A pressure sensor 1P is formed by a plurality of substrate diaphragms 11 on the front surface F11, the sensing material 20 arranged on the plurality of substrate diaphragms 11, and the sensor electrodes 21, 23 and sensor group wires 25, 27 arranged on the surface of the sensing material 20.

[0171] Advantageously, a plurality of substrate films 11, greater than or equal to two, preferably greater than or equal to sixteen, and more preferably greater than or equal to 128 are formed in the substrate 10.

[0172] The increase in the inherent frequency f1 of the sensor device 1 according to the invention is achieved by reducing the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11, but this also reduces the sensitivity σ of the sensor device 1 according to the invention. The sensitivity σ changes quadratically with the diameter D11 of the substrate diaphragm 11. Halving the diameter D11 of the substrate diaphragm 11 while keeping the thickness T11 constant results in a reduction of the amount of generated piezoelectric charges Q20+ and Q20- to one-quarter. By arranging a plurality of substrate diaphragms 11 in the substrate 10, wherein a sensing material 20 is arranged on the front surface F11 of each of the plurality of substrate diaphragms 11, and connecting the sensor electrodes 21 and 23 that capture the piezoelectric charges Q20+ and Q20- of the sensing material 20 in series, the reduction in sensitivity σ of the sensor device 1 according to the invention can be compensated for or even improved.

[0173] According to the second embodiment, the sensor device 1 has a plurality of sensor group contact points 26, 28. The sensor group contact points 26, 28 have the function of providing electrical contact with the lead wire 5.

[0174] The sensor group contact points 26 and 28 are made of conductive materials such as Ag, Au, and Pt.

[0175] Sensor group contact points 26 and 28 include a first sensor group contact point 26 and a second sensor group contact point 28. The first sensor group contact point 26 is arranged on and electrically contacts the first sensor group conductor 25. The second sensor group contact point 28 is arranged on and electrically contacts the second sensor group conductor 27. Each of the two sensor group contact points 26 and 28 has a planar extension parallel to the horizontal plane XY, which is designed to be large enough to achieve electrical contacts such as thermosonic-spherical-wedge bonding and ultrasonic-wedge-wedge bonding.

[0176] Compensator 1K group

[0177] According to the second embodiment, the sensor device 1 has a substrate 10 having a plurality of regions with compensation material 30.

[0178] Preferably, the plurality of regions having compensation material 30 are arranged on the front side of the substrate 10. Both the compensation material 30 and the sensing material 20 are preferably composed of the same materials such as CGS, LGS, tourmaline, AlN, PZT, etc., which have pyroelectric effects.

[0179] These regions with compensation material 30 are spaced apart from each other and electrically insulated from each other by the electrical insulating material of the substrate 10. Preferably, the plurality of regions with compensation material 30 are arranged outside the plurality of substrate diaphragms 11. Thus, these regions with compensation material 30 are also electrically insulated from the sensing material 20 arranged on the plurality of substrate diaphragms 11 by the electrical insulating material of the substrate 1.

[0180] Since the multiple regions with compensation material 30 are arranged outside the multiple substrate diaphragms 11, the pressure P to be measured cannot be applied to the multiple regions with compensation material 30, because the substrate 10 will not deflect due to the pressure P. Therefore, the multiple regions with compensation material 30 do not generate piezoelectric charges as measured values.

[0181] The temperature change ΔT also acts on the sensing material 20 arranged on multiple substrate diaphragms 11 and on multiple regions having compensation material 30, generating pyroelectric charges P20+ and P20- in both the sensing material 20 and the compensation material 30. Preferably, the sensing material 20 and the compensation material 30 are constructed identically such that the amount of pyroelectric charges P20+ and P20- generated in the sensing material 20 is equal to the amount of pyroelectric charges P30+ and P30- generated in the compensation material 30.

[0182] On each of the plurality of substrate films 11, a first sensor electrode 21 is disposed on the surface of the sensing material 20 facing away from the substrate film 11 and intercepts a first pyroelectric charge P20+. A second sensor electrode 23 is disposed on the surface of the sensing material 20 facing the substrate film 11 and intercepts a second pyroelectric charge P20-. On each of the plurality of regions having compensation material 30, a first compensator electrode 31 is disposed on the surface of the compensation material 30 facing away from the substrate 10 and intercepts a first pyroelectric charge P30+. A second compensator electrode 33 is disposed on the surface of the compensation material 30 facing the substrate 10 and intercepts a second pyroelectric charge P30-.

[0183] According to the second embodiment, the sensor device 1 has a plurality of compensator group wires 35, 37. The compensator group wires 35, 37 have the function of collecting pyroelectric charges P30+ and P30-.

[0184] The compensator assembly wires 35 and 37 are made of conductive materials such as Ag, Au, and Pt.

[0185] The compensator group wires 35 and 37 are arranged in two surface regions of the compensating material 30. The compensator group wires 35 and 37 include a first compensator group wire 35 and a second compensator group wire 37. The first compensator group wire 35 is in electrical contact with the first compensator electrode 31 and is connected in series. The second compensator group wire 37 is in electrical contact with the second compensator electrode 33 and is connected in series.

[0186] The substrate 10 has a region with multiple compensation material 30 areas, the multiple compensation material 30 areas, and compensator electrodes 31, 33 and compensator group wires 35, 37 arranged on the surface of these compensation material 30 areas to form a set of compensators 1K.

[0187] According to the second embodiment, the sensor device 1 has a plurality of compensator group contact points 36, 38. The compensator group contact points 36, 38 have the function of providing electrical contact with the lead wire 5.

[0188] The compensator group contacts 36 and 38 are made of conductive materials such as Ag, Au, and Pt.

[0189] The compensator group contacts 36 and 38 include a first compensator group contact 36 and a second compensator group contact 38. The first compensator group contact 36 is arranged on and electrically contacts the first compensator group conductor 35. The second compensator group contact 38 is arranged on and electrically contacts the second compensator group conductor 37. Each of the two compensator group contacts 36 and 38 has a planar extension parallel to the horizontal plane XY, which is designed to be large enough to achieve electrical contacts such as thermosonic-spherical-wedge bonding and ultrasonic-wedge-wedge bonding.

[0190] Lead 5

[0191] Lead 5 has the function of guiding piezoelectric charges Q20+, Q20- and pyroelectric charges P20+, P20-, P30+, P30-.

[0192] Lead 5 has multiple charge leads 51 and 52 made of conductive materials such as copper (Cu), Ag, and Au. Charge leads 51 and 52 are wires with a diameter typically 15-200 µm.

[0193] The charge leads 51 and 52 include a first charge lead 51 and a second charge lead 52.

[0194] according to Figure 5 The schematic circuit diagram shows that the first charge lead 51 is electrically contacted with the first sensor electrode 21 through the first sensor contact point 22 and with the second compensator electrode 33 through the second compensator contact point 34. Therefore, a first piezoelectric charge Q20+ and a first pyroelectric charge P20+ from the sensing material 20, and a second pyroelectric charge P30- from the compensator material 30 are applied to the first charge lead 51. Advantageously, the amount of the first pyroelectric charge P20+ from the sensing material 20 is equal to the amount of the second pyroelectric charge P30- from the compensator material 30, thus the pyroelectric charges P20+ and P30- mutually compensate each other on the first charge lead 51.

[0195] according to Figure 5 The schematic circuit diagram shows that the second charge lead 52 is electrically contacted with the second sensor electrode 23 through the second sensor contact point 24, and electrically contacted with the first compensator electrode 31 through the first compensator contact point 32. Therefore, a second piezoelectric charge Q20- and a second pyroelectric charge P20- of the sensing material 20 and a first pyroelectric charge P30+ of the compensating material 30 are applied to the second charge lead 52. Advantageously, the amount of the second pyroelectric charge P20- of the sensing material 20 is equal to the amount of the first pyroelectric charge P30+ of the compensating material 30, thus the pyroelectric charges P20- and P30+ mutually compensate each other on the second charge lead 52.

[0196] Piezoelectric charges Q20+ and Q20- are drawn out from sensor contact points 22 and 24 via charge leads 51 and 52.

[0197] according to Figure 6The schematic circuit diagram shows that the first charge lead 51 is electrically connected to the first sensor group contact point 26 and the second compensator group contact point 38. Therefore, a first piezoelectric charge Q20+ and a first pyroelectric charge P20+ from the sensing material 20, and a second pyroelectric charge P30- from the compensating material 30 are applied to the first charge lead 51. Advantageously, the amount of the first pyroelectric charge P20+ from the sensing material 20 is equal to the amount of the second pyroelectric charge P30- from the compensating material 30, thus the pyroelectric charges P20+ and P30- mutually compensate for each other on the first charge lead 51.

[0198] according to Figure 6 The schematic circuit diagram shows that the second charge lead 52 is electrically connected to the second sensor group contact point 28 and the first compensator group contact point 36. Therefore, a second piezoelectric charge Q20- and a second pyroelectric charge P20- of the sensing material 20 and a first pyroelectric charge P30+ of the compensating material 30 are applied to the second charge lead 52. Advantageously, the amount of the second pyroelectric charge P20- of the sensing material 20 is equal to the amount of the first pyroelectric charge P30+ of the compensating material 30, thus the pyroelectric charges P20- and P30+ mutually compensate each other on the second charge lead 52.

[0199] When the measurement frequency f When the kHz value significantly exceeds 100 kHz, the wave impedance Z5 of lead 5 needs to be considered. This is because the piezoelectric charges Q20+ and Q20- on leads 51 and 52 generate a magnetic field, thus creating inductance. Furthermore, leads 51 and 52 form capacitances with each other. The wave impedance Z5 depends on both the inductance and capacitance of lead 5. The wave impedance Z5 results in electromagnetic waves that are reflected at the end of lead 5. This reflection can interfere with the measurement of pressure P. To avoid this reflection, at least one end of lead 5 is electrically terminated with a resistor. This resistor absorbs the incident electromagnetic waves. This resistor is equal to the wave impedance Z5 of lead 5. According to industry standards, for lead 5 in coaxial cable form, the wave impedance Z5 is 50 Ω or 75 Ω; for lead 5 in two-core cable form, the wave impedance Z5 is in the range of 100 Ω to 300 Ω.

[0200] Conversion Unit 6

[0201] The conversion unit 6 has the function of converting the extracted piezoelectric charges Q20+ and Q20- into at least one measurement signal PS and MS.

[0202] The measurement signals PS and MS include a pressure signal PS and a ground potential signal MS. The pressure signal PS corresponds to the first piezoelectric charge Q20+. The ground potential signal MS corresponds to the second piezoelectric charge Q20-.

[0203] according to Figure 5 and Figure 6 The schematic circuit diagram shows that the conversion unit 6 has at least one operational amplifier 61, at least one feedback capacitor 62, at least one first charge input contact 63, at least one second charge input contact 65, at least one signal output contact 66, and at least one ground potential output contact 67.

[0204] Operational amplifier 61 has an inverting input terminal i-, a non-inverting input terminal i+, and a signal output terminal o. The inverting input terminal i- has high electrical insulation and low leakage current, less than or equal to 10. -14 A (Ampere). The inverting input i- of the conversion unit 6 has an input impedance Z61 close to 0 Ω. The non-inverting input i+ is at the ground potential 64 of the sensor device 1. The ground potential 64 is a reference potential, such as 0 V. The ground potential 64 can be the potential of the conductive soil at the location of the sensor device 1.

[0205] The charge input contacts 63 and 65 provide electrical contact between the conversion unit 6 and the lead 5. The charge input contacts 63 and 65 are made of conductive materials such as Cu, Ag, and Au.

[0206] The first charge lead 51 forms one end of lead 5 and is connected to the inverting input terminal i- of operational amplifier 61. The first charge lead 51 is in electrical contact with the inverting input terminal i- of operational amplifier 61 through the first charge input contact 63. Therefore, the first piezoelectric charge Q20+ of pressure sensor 1P and pressure sensor 1P group is applied to the inverting input terminal i- of operational amplifier 61. The first piezoelectric charge Q20+ induces a current at the inverting input terminal i-.

[0207] The second charge lead 52 is electrically connected to the ground potential 64 through the second charge input contact 65. Therefore, the pressure sensor 1P and the first piezoelectric charge Q20- of the pressure sensor 1P group are at the ground potential 64.

[0208] The function of operational amplifier 61 is to amplify the piezoelectric charge Q20+ at the inverting input terminal i-.

[0209] Operational amplifier 61 attempts to adjust the voltage difference between the inverting input terminal i- and the non-inverting input terminal i+ to zero. To this end, the piezoelectric charge Q20+ to be amplified flows as a current from the inverting input terminal i- into operational amplifier 61, generating an output voltage at the signal output terminal o.

[0210] Operational amplifier 61 has an operating frequency f61. The operating frequency f61 is the highest frequency at which operational amplifier 61 can amplify the piezoelectric charge Q20+. Preferably, the operating frequency f61 is greater than or equal to 50 MHz, and more preferably greater than or equal to 500 MHz.

[0211] The feedback capacitor 62 is connected in parallel with the inverting input terminal i- and the signal output terminal o of the operational amplifier 61.

[0212] The function of feedback capacitor 62 is to adjust the amplification factor of conversion unit 6. Feedback capacitor 62 is connected between the inverting input terminal i- and the signal output terminal o of operational amplifier 61. Through feedback capacitor 62, the output voltage applied to the signal output terminal o flows back to the inverting input terminal i- as a current. The amount of current flowing back depends on the capacitance C62 of feedback capacitor 62. The larger the feedback capacitor 62, the more current flows back to the inverting input terminal i-, and this current, along with the piezoelectric charge Q20+ to be amplified, flows into operational amplifier 61. Preferably, the capacitance C62 of feedback capacitor 62 is in the range of 10 pF to 1000 pF.

[0213] The input impedance Z61 at the inverting input terminal i- is inversely proportional to the product of the operating frequency f61 of the operational amplifier 61 and the capacitance C62 of the feedback capacitor 62: Z61 ∝ .

[0214] To prevent electromagnetic wave reflection at the inverting input terminal i- in lead 5, the wave impedance Z5 of lead 5 is matched with the input impedance Z61 at the inverting input terminal i-. For this purpose, a matching impedance Z6 is electrically connected between the end of lead 5 leading to the inverting input terminal i- and the inverting input terminal i-. The following formula applies to the matching of the impedance Z5 of lead 5: Z5 = Z61 + Z6 The matching impedance Z6 is on the order of the surge impedance Z5 of lead 5. Preferably, the matching impedance Z6 is less than or equal to the surge impedance Z5 of lead 5. For lead 5 in the form of a coaxial cable, if the surge impedance Z5 is 50 Ω or 75 Ω, then the matching impedance Z6 is less than or equal to the surge impedance Z5 of the coaxial cable (50 Ω or 75 Ω). For lead 5 in the form of a two-core cable, if the surge impedance Z5 is in the range of 100 Ω to 300 Ω, then the matching impedance Z6 is less than or equal to the surge impedance Z5 of the two-core cable (100 Ω to 300 Ω). Preferably, the matching impedance Z6 is less than or equal to 300 Ω, more preferably less than or equal to 75 Ω, and more preferably less than or equal to 50 Ω.

[0215] The following is a numerical example. The scaling factor between the input impedance Z61 at the inverting input i- and the product of the operating frequency f61 of operational amplifier 61 and the capacitance C62 of feedback capacitor 62 is 2π. Given that the operating frequency f61 of operational amplifier 61 is 500 MHz and the capacitance C62 of feedback capacitor 62 is 100 pF, the input impedance Z61 at the inverting input i- is 3.2 Ω. To match lead 5 in coaxial cable form with a ripple impedance Z5 of 50 Ω, the matching impedance Z6 is 46.8 Ω.

[0216] The pressure signal PS is the output voltage applied to the signal output terminal o of the operational amplifier 61. The pressure signal PS corresponds to the amount of the first piezoelectric charge Q20+. Each first piezoelectric charge Q20+ is amplified into a pressure signal PS by the conversion unit 6.

[0217] The signal output contact 66 and the ground potential output contact 67 provide electrical contact between the conversion unit 6 and the evaluation unit 7. The signal output contact 66 and the ground potential output contact 67 are made of conductive materials such as Cu, Ag, or Au.

[0218] The signal output terminal o of operational amplifier 61 is electrically connected to signal output contact 66. A pressure signal PS is applied to signal output contact 66. Ground potential output contact 67 is electrically connected to ground potential 64. A ground potential signal MS is applied to ground potential output contact 67.

[0219] Assessment Unit 7

[0220] Evaluation unit 7 has the function of evaluating sensor signals PS and MS.

[0221] Therefore, the evaluation unit 7 has at least one signal wire 71, at least one ground potential wire 72, at least one interface 73, at least one calculation unit 74, at least one input unit 75 and at least one output unit 76.

[0222] The signal conductor 71 and the ground potential conductor 72 are made of conductive materials such as Cu, Ag, and Au.

[0223] Electrical contact is established between the first signal output contact 66 and the signal wire 71, and electrical contact is established between the first ground potential output contact 72 and the ground potential wire 72. The pressure signal PS is transmitted to the interface 73 through the signal wire 71. The ground potential signal MS is transmitted to the interface 73 through the ground potential wire 72.

[0224] Interface 73 has the function of digitizing measurement signals PS and MS into measurement data elements PD and MD.

[0225] For this purpose, interface 73 has at least one conversion element, such as an analog-to-digital converter. The conversion element is designed to digitize the measurement signals PS, MS into measurement data elements PD, MD. Each measurement data element PD, MD represents the measurement data quantity pv, mv of a measurement value. Each measurement data element PD, MD is a binary digital sequence with resolutions such as 12 bits or 16 bits.

[0226] Interface 73 also includes at least one timer, such as a clock. The timer is designed to configure time points pt and mt for each measurement data element PD, MD. Each time point pt and mt is a binary digital sequence with resolutions such as 12 bits and 16 bits. In the following text, the time points pt and mt provided to the measurement data elements PD and MD are also referred to as the time points pt and mt associated with those measurement data elements PD and MD. At time points pt and mt, interface 73 has digitized the sensor signals PS and MS into measurement data elements PD and MD. The time points pt and mt have a time resolution equal to twice the measurement frequency f, according to the Nyquist-Shannon sampling theorem. The reciprocal of the natural frequency f1. For a measured frequency f that is at most 1 / 3 of the natural frequency f1 greater than or equal to 1 MHz. The time point pt has a value greater than or equal to 3 / 2 10. -6 Time resolution in seconds.

[0227] Measurement data elements PD and MD include at least one pressure data element PD with a pressure value pv, and time points pt and mt include at least one pressure time point pt associated with the pressure data element PD. Interface 73 digitizes each pressure signal PS into a pressure data element PD with a pressure value pv and configures an associated pressure time point pt for the pressure data element PD.

[0228] according to Figure 4 and Figure 5 The schematic circuit diagram shows that the measurement data elements PD and MD also include at least one ground potential data element MD with a ground potential value mv, and the time points pt and mt include at least one ground potential time point mt associated with the ground potential data element MD.

[0229] The computing unit 74 has at least one data memory and at least one data processor.

[0230] The computing unit 74 has at least one evaluation program AP, which is stored in the data memory and can be loaded into the data processor. The evaluation program AP loaded into the data processor is designed to evaluate measurement data elements PD and MD that have measurement data values ​​pv and mv and time points pt and mt.

[0231] The computing unit 74 can be operated via the input unit 75. The verb "operate" means that a person can input instructions via the input unit 75, which are then executed by the computing unit 74. The input unit 75 can be a keyboard or a touchscreen for inputting instructions. Instructions can be input as strings via the input unit 75, and the evaluation program AP loaded into the data processor is designed to generate control data for the input instructions. Therefore, the input instruction can be to turn the sensor device 1 on or off, and the evaluation program AP loaded into the data processor is designed to generate control data for that instruction, which turns the sensor device 1 on or off.

[0232] Furthermore, the evaluation program AP loaded into the data processor is also designed to graphically display the measurement data elements PD, MD, and the date element t for evaluation. The output unit 76 can be a screen that graphically displays the measurement data elements PD and MD to personnel.

[0233] With knowledge of the present invention, those skilled in the art can implement various modifications of the illustrated embodiments. Thus, the pressure sensor 1P, lead 5, and conversion unit 6 can be implemented within the housing at the location where the pressure P is measured.

Claims

1. A sensor device (1) designed for measuring pressure (P), comprising at least one substrate (10) and at least one sensing material (20); said substrate (10) being partially formed into a substrate diaphragm (11), said substrate diaphragm (11) being designed to receive the pressure (P) to be measured, and said substrate diaphragm (11) being deflectable under said pressure (P); characterized in that, The sensing material (20) is partially disposed on the substrate diaphragm (11), and the sensing material (20) generates piezoelectric charges (Q20+, Q20-) through the deflection of the substrate diaphragm (11), and the amount of the generated piezoelectric charges (Q20+, Q20-) is proportional to the magnitude of the measured pressure (P); the sensor device (1) has at least one compensation material (30), which is partially disposed on the substrate (10); the sensing material (20) generates pyroelectric charges (P20+, P20-) under the action of temperature change (ΔT); the compensation material (30) generates pyroelectric charges (P30+, P30-) under the action of temperature change (ΔT); and the pyroelectric charges (P30+, P30-) generated by the compensation material (30) compensate for the pyroelectric charges (P20+, P20-) generated by the sensing material (20).

2. The sensor device (1) according to claim 1, characterized in that, The compensation material (30) is arranged outside the substrate membrane (11).

3. The sensor device (1) according to claim 1 or 2, characterized in that, The substrate diaphragm (11) has a thickness (T11) along a vertical axis (Z) and a diameter (D11) in a horizontal plane (XY) perpendicular to the vertical axis; the thickness (T11) of the substrate diaphragm (11) is less than or equal to 20 µm, preferably less than or equal to 10 µm, preferably less than or equal to 5 µm; the diameter (D11) of the substrate diaphragm (11) is less than or equal to 300 µm, preferably less than or equal to 200 µm, preferably less than or equal to 100 µm; and the ratio of the thickness (D11) to the diameter (D11) of the substrate diaphragm (11) is selected such that the sensor device (1) has an intrinsic frequency (f1) greater than or equal to 1 MHz.

4. The sensor device (1) according to any one of claims 1 to 3, characterized in that, The base body (10) and the base diaphragm (11) are made of silicon.

5. The sensor device (1) according to any one of claims 1 to 4, characterized in that, The sensing material (20) generates piezoelectric charges (Q20+, Q20-) and pyroelectric charges (P20+, P20-) on multiple surfaces; the sensor device (1) has multiple sensor electrodes (21, 23) arranged on the surface of the sensing material (20) and intercepting the piezoelectric charges (Q20+, Q20-) and the pyroelectric charges (P20+, P20-); and the substrate diaphragm (11), the sensing material (20) arranged on the substrate diaphragm (11), and the sensor electrodes (21, 23) arranged on the surface of the sensing material (20) A pressure sensor (1P) is formed; the compensation material (30) generates the pyroelectric charge (P20+, P20-) on multiple surfaces; the sensor device (1) has multiple compensator electrodes (31, 33) arranged on the surface of the compensation material (30) and intercepting the pyroelectric charge (K30+, K30-); and the area of ​​the substrate (10) where the compensation material (30) is provided, the compensation material (30) arranged on the substrate (10) and the compensator electrodes (31, 33) arranged on the surface of the compensation material (30) form a compensator (1K).

6. The sensor device (1) according to any one of claims 1 to 5, characterized in that, A plurality of substrate diaphragms (11) are locally formed in the substrate (10), each of the plurality of substrate diaphragms (11) being designed to receive the pressure (P) to be measured, and each of the plurality of substrate diaphragms (11) being deflected under the action of the pressure (P); on each of the plurality of substrate diaphragms (11), a sensing material (20) is arranged on the substrate diaphragm (11), the sensing material (20) generating piezoelectric charges (Q20+, Q20-) through the deflection of the substrate diaphragm (11); a plurality of regions having compensation material (30) are arranged on the substrate (10); a temperature change (ΔT) is similarly applied to the sensing material (20) and the compensation material (30), and under the action of the temperature change (ΔT), both the sensing material (20) and the compensation material (30) generate pyroelectric charges (P20+, P20-).

7. The sensor device (1) according to claim 6, characterized in that, On each of the plurality of substrate films (11), the sensor electrodes (21, 23) are arranged on the surface of the sensing material (20) and capture the piezoelectric charge (Q20+, Q20-) and pyroelectric charge (P20+, P20-) of the sensing material (20); the sensor device (1) has sensor group wires (25, 27) through which the sensor electrodes (21, 23) are electrically connected in series; on each of the plurality of regions having compensation material (30), the compensator electrodes (31, 33) are arranged on the surface of the compensation material (30) and capture the pyroelectric charge (P30+, P30-) of the compensation material (30); and the sensor device (1) has a plurality of compensator group wires (35, 37) through which the compensator electrodes (31, 33) are electrically connected in series.

8. The sensor device (1) according to claim 5 or 7, characterized in that, The piezoelectric charge (Q20+, Q20-) of the sensing material (20) includes a first piezoelectric charge (Q20+) and a second piezoelectric charge (Q20-); the pyroelectric charge (P20+, P20-) of the sensing material (20) includes a first pyroelectric charge (P20+) and a second pyroelectric charge (P20-); the sensor electrodes (21, 23) include a first sensor electrode (21) and a second sensor electrode (23); the first sensor electrode (21) intercepts the first piezoelectric charge (Q20+) and the first pyroelectric charge (P20+) of the sensing material (20); the second sensor electrode (23) intercepts... The second piezoelectric charge (Q20-) and the second pyroelectric charge (P20-) of the sensing material (20) are taken; the pyroelectric charge (P30+, P30-) of the compensation material (30) includes the first pyroelectric charge (P30+) and the second pyroelectric charge (P30-); the compensator electrode (31, 33) includes the first compensator electrode (31) and the second compensator electrode (33); the first compensator electrode (31) intercepts the first pyroelectric charge (P30+) of the compensation material (30); and the second compensator electrode (33) intercepts the second pyroelectric charge (P30-) of the compensation material (30).

9. The sensor device (1) according to claim 8, characterized in that, The sensor device (1) has at least one lead (5), the lead (5) having a first charge lead (51) and a second charge lead (52); the first charge lead (51) is in electrical contact with the first sensor electrode (21) and the second compensator electrode (33), and a first piezoelectric charge (Q20+) and a first pyroelectric charge (P20+) of the sensing material (20) and a second pyroelectric charge (P30-) of the compensator material (30) are applied to the first charge lead (51); the amount of the first pyroelectric charge (P20+) of the sensing material (20) is equal to the amount of the second pyroelectric charge (P30-) of the compensator material (30), and the pyroelectric charge (P20+) is equal to the amount of the second pyroelectric charge (P30-) of the compensator material (30). +, P30-) compensate each other on the first charge lead (51); and the second charge lead (52) is in electrical contact with the second sensor electrode (23) and the first compensator electrode (31), and the second piezoelectric charge (Q20-) and the second pyroelectric charge (P20-) of the sensing material (20) and the first pyroelectric charge (P30+) of the compensator material (30) are applied on the second charge lead (52); the amount of the second pyroelectric charge (P20-) of the sensing material (20) is equal to the amount of the first pyroelectric charge (P30+) of the compensator material (30), and the pyroelectric charges (P20-, P30+) compensate each other on the second charge lead (52).

10. The sensor device (1) according to claim 9, characterized in that, The charge leads (51, 52) conduct the piezoelectric charges (Q20+, Q20-); and at least one end of the lead (5) is electrically connected to the wave impedance (Z5).

11. The sensor device (1) according to claim 10, characterized in that, The sensor device (1) has at least one conversion unit (6), the conversion unit (6) has an operational amplifier (61) and a feedback capacitor (62); the operational amplifier (61) has an inverting input terminal (i-), a non-inverting input terminal (i+) and a signal output terminal (o); the feedback capacitor (62) is connected between the inverting input terminal (i-) and the signal output terminal (o); the lead (5) conducts the piezoelectric charge (Q20+, Q20-) to the conversion unit (6); the piezoelectric charge (Q20+, Q20-) includes a first piezoelectric charge (Q20+), the first piezoelectric charge (Q20+) is applied to the inverting input terminal (i-) of the operational amplifier (61); and the conversion unit (6) amplifies the first piezoelectric charge (Q20+) into a pressure signal (PS) applied to the signal output terminal (o).

12. The sensor device (1) according to claim 11, characterized in that, The operational amplifier (61) has an operating frequency (f61), which amplifies the first piezoelectric charge (Q20+) into a pressure signal (PS). The feedback capacitor has a capacitance (C62), which determines the amount of current flowing back to the inverting input terminal (i-) through the feedback capacitor (62), and the returning current amplifies the first piezoelectric charge (Q20+). Furthermore, the input impedance (Z61) at the inverting input terminal (i-) of the operational amplifier (61) is inversely proportional to the product of the operating frequency (f61) of the operational amplifier (61) and the capacitance (C62) of the feedback capacitor (62). Z61 ∝ 。 13. The sensor device (1) according to claim 12, characterized in that, The input impedance (Z61) at the inverting input terminal (i-) of the operational amplifier (61) is matched with the wave impedance (Z5) of the lead (5) through a matching impedance (Z6); and the matching impedance (Z6) is electrically connected between one end of the lead (5) leading to the inverting input terminal (i-) of the operational amplifier (61) and the inverting input terminal (i-) of the operational amplifier (61).

14. The sensor device (1) according to claim 13, characterized in that, The matching impedance (Z6) is on the order of the wave impedance (Z5) of the lead (5).

15. The sensor device (1) according to claim 14, characterized in that, For a lead (5) in the form of a coaxial cable with a wave impedance (Z5) of 50 Ω or 75 Ω, the matching impedance (Z6) is less than or equal to the wave impedance (Z5) of the coaxial cable of 50 Ω or 75 Ω; or, for a lead (5) in the form of a two-core cable with a wave impedance in the range of 100 Ω to 300 Ω, the matching impedance (Z6) is less than or equal to the wave impedance (Z5) of the two-core cable in the range of 100 Ω to 300 Ω.

16. The sensor device (1) according to any one of claims 12 to 15, characterized in that, The operating frequency (f61) of the operational amplifier (61) is greater than or equal to 1 / 3 of the inherent frequency (f1) of the sensor device (1) which is greater than or equal to 1 MHz.

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