A method and system for charge deposition measurement and feedback based on transient analysis

Abstract

The application discloses a method and system for measuring and feeding back fuel deposition based on transient analysis, which comprises the following steps: continuously capturing the transient evolution of the plasma density profile at a time resolution meeting the requirements of transient analysis before and after the fuel pulse trigger, and accurately synchronizing the working timing of the fuel trigger, data acquisition and signal analysis; calculating the density profile change amount within the selected transient analysis time window, and obtaining the deposition position and the total deposition particle number; calculating the real fuel efficiency according to the total deposition particle number and the calibrated injected particle number, comparing the real fuel efficiency and the deposition position with the target value, and generating a control instruction to adjust the parameters of the subsequent fuel pulse in real time. The application can quickly capture the initial deposition state of the fuel in a very short time after fueling, that is, before the wall recirculation and particle transport effect significantly interfere with the measurement results, so as to realize accurate evaluation of the real fuel efficiency and synchronous acquisition of the spatial information of the deposition position.

Description

Technical Field

[0001] This application belongs to the field of nuclear fusion plasma feeding technology, specifically relating to a feeding deposition measurement and feedback method and system based on transient analysis, which is particularly suitable for performance evaluation and plasma profile feedback control of transient feeding methods such as ultrasonic molecular beam and projectile injection. Background Technology

[0002] In magnetic confinement fusion research, efficient and controllable fuel feeding is crucial for maintaining and optimizing plasma parameters and achieving high-performance discharge. Feeding efficiency, the proportion of injected fuel effectively captured and confined by the plasma, is a core indicator for evaluating the performance of various feeding systems (such as ultrasonic molecular beam injection and projectile injection). However, accurately measuring feeding efficiency has long faced significant challenges.

[0003] Currently, widely used methods for measuring fuel loading efficiency primarily rely on monitoring and comparing the global changes in the total number of plasma particles before and after fuel loading. This method has fundamental flaws in its principle: First, it cannot effectively distinguish between newly injected fuel particles and recycled particles released from the first wall material. Under conditions of high recycling rates, the particle flux released from the wall may even exceed the fuel loading itself, leading to physically unreasonable calculated fuel loading efficiency results exceeding 100%, severely overestimating the true performance of the fuel loading system. Second, particles undergo complex transport processes within the plasma, and their spatial distribution evolves continuously over time. Traditional global measurement methods, due to insufficient temporal resolution, produce results that are essentially a mixture of the coupling effects of multiple physical processes (injection, recycling, and transport) over long timescales, rather than a true reflection of the fuel loading and deposition itself. Furthermore, for fuel loading methods with strong localization and transient characteristics, such as ultrasonic molecular beams and projectiles, traditional methods are completely unable to provide crucial information such as the specific spatial location and distribution morphology of fuel deposition, greatly limiting the ability to optimize fuel loading depth and deposition profile.

[0004] Therefore, there is an urgent need to study a technology that can accurately assess the true efficiency of feeding and simultaneously acquire spatial information of the deposition location, so as to provide technical support for further improvement and optimization of the feeding system performance of fusion devices. Summary of the Invention

[0005] To overcome the technical shortcomings of existing feeding efficiency measurement methods that cannot measure the true deposition efficiency due to the coupling of slow processes such as wall recirculation and particle transport, this application proposes a feeding deposition measurement and feedback method and system based on transient analysis. This method can quickly capture the initial deposition state of the fuel in a very short time after feeding, that is, before the effects of wall recirculation and particle transport significantly interfere with the measurement results. This enables an accurate assessment of the true feeding efficiency and simultaneously acquires the spatial information of the deposition location, providing more realistic and reliable technical support for further improvement and optimization of the fusion device feeding system performance.

[0006] This application is achieved through the following technical solution:

[0007] A method for measuring and feeding deposition based on transient analysis, comprising:

[0008] Using a rapid density profile measurement system, the transient evolution of the plasma density profile is continuously captured with time resolution to meet the requirements of transient analysis before and after the feeding pulse is triggered, and the timing of feeding trigger, data acquisition and signal analysis is precisely synchronized.

[0009] The density profile change is calculated within the selected transient analysis time window, and the deposition location and total number of deposited particles are obtained based on the density profile change; wherein the transient analysis time window is a time window much smaller than the particle confinement time after the feed pulse is triggered.

[0010] The actual feeding efficiency is calculated based on the total number of deposited particles and the calibrated number of injected particles. The actual feeding efficiency and deposition position are then compared with the target value to generate control commands to adjust the parameters of subsequent feeding pulses in real time.

[0011] In some implementations, the transient analysis time window is less than one-tenth of the particle constraint time.

[0012] In some implementations, the transient analysis time window is longer than the time required for the feed particles to be fully ionized.

[0013] In some implementations, the step of calculating the density profile change within a selected transient analysis time window and obtaining the deposition location and total number of deposited particles based on the density profile change includes:

[0014] Within the selected transient analysis time window, the density profile change is calculated. The density profile change is equal to the density profile at the end of the transient analysis time window minus the density profile at the beginning of the transient analysis time window.

[0015] By performing distribution fitting on the density profile variation, the radial position of the deposition peak and the deposition distribution width can be retrieved.

[0016] The total number of deposited particles is calculated by radial spatial integration of the density profile change.

[0017] In some embodiments, the distribution fitting of the density profile variation includes:

[0018] The radial position of the deposition peak and the width of the deposition distribution are accurately inverted using a Gaussian distribution model or a polynomial fitting model.

[0019] In some implementations, the actual feeding efficiency is calculated as follows:

[0020] The actual feed efficiency is the percentage of the total number of deposited particles to the calibrated number of injected particles.

[0021] The aforementioned generation control commands, used to adjust the parameters of subsequent feeding pulses in real time, include:

[0022] The control commands are applied to the feeding unit to adjust the timing, speed, or quality of the feeding pulse, thereby achieving closed-loop control of the feeding process.

[0023] On the other hand, this application also proposes a feed deposition measurement and feedback system based on transient analysis, used to implement any of the above-mentioned feed deposition measurement and feedback methods based on transient analysis. The system includes:

[0024] The transient profile measurement unit is configured to acquire the transient evolution of the plasma electron density profile with high spatiotemporal resolution.

[0025] The timing coordination control unit is configured to precisely synchronize the working timing of feeding triggering, data acquisition and signal analysis in order to lock the transient analysis time window;

[0026] Furthermore, the signal processing and feedback control unit is configured to: complete the calculation from the original signal to the actual feeding efficiency and deposition position within the transient analysis time window, and generate control commands to adjust the parameters of the feeding pulse in real time.

[0027] In some implementations, the system further includes:

[0028] The feeding unit is configured to obtain a calibration curve of the number of injected particles and fuel characteristic injection parameters through offline calibration, and to use it for real-time calculation of the number of injected particles, which is suitable for ultrasonic molecular beam injection or projectile injection.

[0029] In some implementations, the temporal resolution of the transient profile measurement unit should be much smaller than the transient analysis time window; at the same time, the spatial resolution of the transient profile measurement unit should be much smaller than the plasma small radius.

[0030] In some implementations, the feeding unit establishes a particle number calibration database based on an offline precise calibration method, performs real-time calculation of the injected particle number through characteristic curves or relational formulas and database table interpolation, and supports custom data curve updates.

[0031] This application proposes a feeding deposition measurement and feedback method and system based on transient analysis. Its core is to complete the capture, analysis and feedback of the deposition profile signal within a transient analysis time window that is much smaller than the particle constraint time after the feeding pulse. In this way, the real feeding deposition information can be extracted and the feeding process can be optimized before the wall recirculation and macroscopic transport effects significantly affect the measurement results.

[0032] This application achieves a breakthrough in the measurement paradigm from "apparent value" to "true value": by focusing on the initial transient state before the occurrence of interference effects, it realizes for the first time the in-situ direct measurement of "true deposition efficiency", which fully eliminates the interference of wall recycling and particle transport, and improves the measurement accuracy and reliability by an order of magnitude.

[0033] This application also transforms the location and distribution of sediments from "unknown" to "known": by analyzing the changes in transient density profiles, it is possible not only to accurately determine the location of sediment peaks, but also to quantitatively determine the width of sediment distribution, providing spatially resolved data for understanding the physics of feed addition and optimizing feed addition schemes.

[0034] This application also establishes the technical foundation for real-time optimization of the feeding process: by integrating dedicated real-time processing hardware and feedback control algorithms, it becomes possible to dynamically adjust the feeding strategy based on measurement results within a single plasma discharge pulse, providing a core technical means for achieving adaptive feeding control and optimizing plasma performance.

[0035] This application also forms a complete and implementable technical solution: it provides a complete system architecture from signal acquisition and processing to control, ensuring the engineering feasibility and practicality of the technical solution. Attached Figure Description

[0036] The accompanying drawings, which are included to provide a further understanding of the embodiments of this application and form part of this application, do not constitute a limitation on the embodiments of this application. In the drawings:

[0037] Figure 1 This is a flowchart of the real-time measurement and feedback method proposed in the embodiments of this application;

[0038] Figure 2 This is a block diagram illustrating the principle of the real-time measurement and feedback system proposed in the embodiments of this application;

[0039] Figure 3 This is a schematic diagram of density distribution and particle deposition signal extraction in an embodiment of this application. Detailed Implementation

[0040] In the following, the terms “comprising” or “may include” as used in the various embodiments of this application indicate the presence of a function, operation, or element of the invention and do not limit the addition of one or more functions, operations, or elements. Furthermore, as used in the various embodiments of this application, the terms “comprising,” “having,” and their cognates are intended only to indicate a specific feature, number, step, operation, element, component, or combination of the foregoing and should not be construed as primarily excluding the presence of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing, or adding one or more combinations of the foregoing.

[0041] In various embodiments of this application, the expression "or" or "at least one of A and / or B" includes any combination or all combinations of the words listed simultaneously. For example, the expression "A or B" or "at least one of A and / or B" may include A, may include B, or may include both A and B.

[0042] The terms used in the various embodiments of this application (such as "first," "second," etc.) may modify various constituent elements in the various embodiments, but do not limit the corresponding constituent elements. For example, the above terms do not limit the order and / or importance of the elements. The above terms are only used for the purpose of distinguishing one element from other elements. For example, a first user device and a second user device refer to different user devices, although both are user devices. For example, without departing from the scope of the various embodiments of this application, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0043] It should be noted that if a description is made of "connecting" one component to another, then the first component can be directly connected to the second component, and a third component can be "connected" between the first and second components. Conversely, when a component is "directly connected" to another component, it can be understood that there is no third component between the first and second components.

[0044] The terminology used in the various embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the various embodiments of this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of this application pertain. The terms (such as those defined in a generally used dictionary) are to be interpreted as having the same meaning as in the context of the relevant technical field and are not to be interpreted as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of this application.

[0045] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the embodiments and accompanying drawings. The illustrative embodiments and descriptions of this application are only for explaining this application and are not intended to limit this application.

[0046] To overcome the technical shortcomings of existing feeding efficiency measurement methods that cannot measure the true deposition efficiency due to the coupling of slow processes such as wall recirculation and particle transport, this application proposes a feeding deposition measurement and feedback method based on transient analysis. By capturing and analyzing the undisturbed initial deposition state after feeding, it achieves in-situ and accurate measurement of the true feeding efficiency and deposition characteristics, and provides a technical basis for real-time optimization control of the feeding process.

[0047] Specifically, such as Figure 1 As shown, the method proposed in this application includes the following steps:

[0048] Step 1: Using a rapid density profile measurement system, before and after the feeding pulse is triggered, the transient evolution of the plasma density profile is continuously captured with the time resolution required for transient analysis, and the timing of feeding trigger, data acquisition and signal analysis is precisely synchronized.

[0049] Step 2: Calculate the density profile change within the selected transient analysis time window, and obtain the deposition location and total number of deposited particles based on the density profile change; this transient analysis time window is a time window much smaller than the particle confinement time after the feed pulse is triggered.

[0050] Step 3: Calculate the actual feeding efficiency based on the total number of deposited particles and the calibrated number of injected particles, compare the actual feeding efficiency and deposition position with the target value, and generate control commands to adjust the parameters of subsequent feeding pulses in real time.

[0051] Furthermore, the density profile measurement system in step 1 of this application embodiment may be, but is not limited to, a high-speed swept-frequency reflectometer or a multi-channel interferometer.

[0052] Furthermore, in step 2 of this embodiment, the transient analysis time window is selected by setting the transient analysis time window based on plasma parameters or prior knowledge. The conditions it satisfies are:

[0053] ;

[0054] in, The characteristic time represents the time of disturbance processes such as wall recirculation or particle transport.

[0055] Preferably, the transient analysis time window is a time value less than one-tenth of the particle constraint time, i.e.: ,in, The particle constraint time.

[0056] Furthermore, the transient analysis time window is related to the feeding method, and is preferably longer than the time for complete ionization of the fed particles. For example, 2ms can be selected for common ultrasonic molecular beam feeding, and 5ms can be selected for projectile feeding injection.

[0057] Furthermore, step 2 of this application embodiment specifically includes the following analysis process:

[0058] Within the selected transient analysis time window, the density profile change is calculated to obtain a pure depositional signal. The density profile change is calculated as follows: ;in, The density profile represents the end of the transient analysis time window; The density profile representing the start time of the transient analysis time window; This indicates the change in density profile.

[0059] By fitting the distribution of density profile changes, the radial position of the deposition peak can be determined. and sediment distribution width Specifically, the distribution of density profile variation can be fitted using a Gaussian distribution model or a multinomial fitting model. A loss function is constructed using the least squares method, and the residuals are continuously reduced through iteration to accurately invert the radial position of the deposition peak. and sediment distribution width .

[0060] Radial spatial integration of the density profile change: The total number of sedimentary particles was calculated. ;in, Indicates the radial position corresponding to the density; Indicates the circumferential length.

[0061] Furthermore, in step 3 of this application embodiment, the calculation method for the actual feeding efficiency is as follows:

[0062] ;

[0063] in, To reflect the actual feeding efficiency; This represents the calibrated number of injected particles.

[0064] Furthermore, in step 3 of this embodiment, control commands are applied to the feeding unit to adjust the timing, speed, or quality of the feeding pulse, thereby achieving closed-loop control of the feeding process.

[0065] The method proposed in this application completes the capture, analysis and feedback of the deposition profile signal within a transient analysis time window that is much smaller than the particle constraint time after the feeding pulse. This allows for the extraction of real feeding deposition information and optimization of the feeding process before wall recirculation and macroscopic transport effects significantly affect the measurement results.

[0066] Furthermore, this application also proposes a feed deposition measurement and feedback system based on transient analysis, used to implement any of the corresponding embodiments in the above-described feed deposition measurement and feedback method based on transient analysis. Specifically, as follows... Figure 2 As shown, the system proposed in this application includes:

[0067] The transient profile measurement unit is configured to acquire the transient evolution of the plasma electron density profile with high spatiotemporal resolution (i.e., to perform the transient evolution capture process described in step 1 above). Specifically, it can employ, but is not limited to, a high-speed swept-frequency reflectometer, a high-resolution multi-channel interferometer, or a multi-frequency reflectometer system to ensure the required temporal and spatial resolution. Preferably, the temporal resolution of this transient profile measurement unit should be smaller than the characteristic time, for example... (i.e., much smaller than the transient analysis time window), and the spatial resolution of this transient profile measurement unit should be much smaller than the plasma radius for measuring the deposition width; that is, the spatial resolution should be at least smaller than... , The plasma has a small radius. The transient profile measurement unit of this application is designed to achieve high spatiotemporal resolution profile measurement.

[0068] The timing coordination control unit is configured to precisely synchronize the working timing of feeding triggering, data acquisition, and signal analysis (i.e., to implement the timing synchronization process in step 1 above) to lock the transient analysis time window. The timing coordination control unit in this embodiment aims to complete the transient analysis time window configuration and the determination of the triggering timing of each unit.

[0069] Furthermore, the signal processing and feedback control unit is configured to: complete the calculation from the original signal to the actual feeding efficiency and deposition position within the transient analysis time window, and generate control commands to adjust the parameters of the feeding pulse in real time (i.e., implement the calculation and feedback control process of steps 2 and 3 above). Preferably, the signal processing and feedback control unit can adopt a dedicated hardware processing unit, such as an FPGA or DSP architecture, to realize real-time calculation and feedback control. The signal processing and feedback control unit of this application embodiment aims to calculate the density profile change based on the pre-loaded density profile and deposition calculation algorithm, and inversely obtain the deposition spatial distribution data (radial position of deposition peak and deposition distribution width) and calculate the total number of deposition particles based on the density profile change. Then, it calculates the actual feeding efficiency based on the pre-loaded efficiency calculation algorithm, compares the obtained deposition parameters with the target value, generates corresponding control commands, and sends them to the feeding unit.

[0070] Furthermore, the system proposed in this application embodiment also includes:

[0071] The feeding unit is configured to obtain calibration curves of the number of injected particles and fuel characteristic injection parameters such as pressure, pulse width, or projectile size through offline calibration, and to use them for real-time calculation of the number of injected particles. It is suitable for ultrasonic molecular beam injection or projectile injection.

[0072] Specifically, the offline calibration process is based on the pressure decay / gain method in a controlled container: by traversing the injection parameter combinations under static vacuum conditions, the gas pressure difference before and after injection is measured, and the number of injected particles is accurately calculated using the ideal gas law; then, the mapping function between the number of particles and characteristic parameters (such as calibration curves or response matrices) is established through least squares fitting, and stored in the calibration database.

[0073] This feeding unit establishes a particle number calibration database based on an offline precise calibration method. It can calculate the injected particle number in real time using characteristic curves, relational formulas, and database table interpolation, and supports custom data curve updates. The feeding unit in this embodiment aims to achieve functions such as real-time calculation of the calibrated particle number (calibrated injected particle number) and setting injection parameters.

[0074] The system proposed in this application embodiment is integrated into a magnetic confinement nuclear fusion device for real-time optimization and control of the ultrasonic molecular beam or projectile injection feeding process.

[0075] To verify the feasibility of the methods and systems proposed in this application, this application implements the above methods and systems on a tokamak fusion device. The specific implementation environment and system configuration are as follows: the plasma in the tokamak fusion device has a small radius of... m, large radius m. This tokamak fusion device is equipped with an ultrasonic molecular beam injection system as the feeding method. The specific implementation process is as follows:

[0076] In the constructed measurement and feedback system, the transient profile measurement unit employs a Ka-U band (26~60GHz) swept-frequency reflectometer to achieve rapid frequency sweeping. Since frequency corresponds to density, the plasma is non-uniformly distributed along its small radius. However, based on common density distribution patterns, its spatial resolution is expected to be better than 0.1cm, while its temporal profile resolution is expected to be less than 0.1ms.

[0077] The timing coordination control unit, based on an FPGA-built master clock generator, is used to precisely synchronize the ultrasonic molecular beam valve trigger signal with the reflectometer data acquisition card start signal, with a synchronization accuracy of 10ns.

[0078] The signal processing and feedback control unit employs a dedicated signal processor embedded in the reflectometer. This processor is configured to automatically execute the data processing algorithm described above in the embodiments of this application (i.e., the data processing algorithm involved in steps 2 and 3) after the feeding is triggered.

[0079] The feeding unit employs an ultrasonic molecular beam injector with a calibration database. Its piezoelectric valve is driven by the aforementioned timing coordination control unit and can receive feedback control commands from the signal processor to dynamically adjust its injected gas volume (achieved by changing the valve opening duration) and injection timing, while also providing the number of injected particles.

[0080] In a specific plasma discharge, the relevant parameters are as follows:

[0081] Plasma particle confinement time : This is obtained through early discharge measurements, typically 200 ms.

[0082] Transient analysis time window : Set as ms, the condition to be met: ensure that the measurement is completed before a large number of recirculated particles return to the plasma.

[0083] calibrated number of injected particles The injected deuterium gas was 1 bar, the injection time was 20 ms, and the particle number was calibrated to be approximately [missing value]. One deuterium atom.

[0084] The specific measurement and processing procedures include:

[0085] S1, Transient signal synchronous acquisition:

[0086] (1) During the discharge level-off phase, the timing coordination control unit in The ultrasonic molecular beam injection pulse (pulse width 20ms) is triggered at ms, and the data acquisition and feedback of the reflectometer are carried out in real time.

[0087] (2) The reflectometer continuously captures the electron density evolution of the entire plasma profile at a sampling rate of 0.02 ms (1 ms per profile).

[0088] S2, Transient analysis time window selection and sedimentation signal extraction:

[0089] (1) The signal processor injects the trigger time. ms is the time base, automatically truncated. arrive Density profile data within a ms time window.

[0090] (2) The processor calculates the change in density profile between the end and start times of the time window:

[0091] ;

[0092] The results are as follows Figure 3 As shown, a clear local density enhancement peak is observed.

[0093] S3, Sedimentary Characteristic Inversion:

[0094] Gaussian function fitting was performed on the distribution of density profile variation:

[0095] ;

[0096] in, Indicates peak height; Indicates radial position; Indicates the radial position of the deposition peak; Indicates the width of the sediment distribution.

[0097] Fitting results output:

[0098] Radial position of deposition peak m (measured from the center of the tokamak fusion device; if measured from the center of the plasma, it is 2.21 m).

[0099] Deposition distribution width m.

[0100] The total number of sedimentary particles is calculated by radially integrating the density profile change.

[0101] ;

[0102] Among them, the circumferential length Pick The integral calculation yields... .

[0103] Actual feeding efficiency and real-time feedback:

[0104] Calculate the actual feeding efficiency:

[0105] ;

[0106] In this embodiment of the application, if the efficiency target value is 60% and the position target value is... m.

[0107] The real-time processor compares the measured value with the target value:

[0108] The actual feeding efficiency was slightly lower than the target, but the deposition location was slightly off-center.

[0109] The processor generates control instructions: in the next feed pulse, increase the injection rate in order to push the deposition peak inward.

[0110] The control command is sent to the ultrasonic molecular beam injector via the timing coordination control unit, and in the next feeding cycle of this discharge (e.g., The ultrasonic molecular beam velocity was increased in the ms, thereby realizing real-time feedback optimization of the feeding process during discharge.

[0111] The above-described implementation and application have fully verified the effectiveness of the method and system proposed in the embodiments of this application:

[0112] (1) Accuracy: The true feeding efficiency of 55% obtained by separating the transient analysis time window is a "true deposition efficiency" that excludes the interference of wall recirculation. This is in stark contrast to the "apparent efficiency" of more than 100% calculated by the traditional global method in the same discharge due to recirculation. The result is more physically reasonable and accurate.

[0113] (2) Spatial resolution capability: Successfully retrieved the radial position of the deposition peak. m and depositional distribution width m provides crucial spatial distribution information for physics research.

[0114] (3) Real-time control capability: The entire process from measurement to feedback is completed within milliseconds, which proves that the method and system proposed in this application provide a reliable technical tool for the active control of high-performance plasma.

[0115] It should be noted that the descriptions of each embodiment in the above embodiments have different focuses. For parts that are not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0116] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0117] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0118] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0119] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0120] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of this application. It should be understood that the above description is only a specific embodiment of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A feeding deposition measurement and feedback method based on transient analysis, characterized in that, include: Using a rapid density profile measurement system, the transient evolution of the plasma density profile is continuously captured with time resolution to meet the requirements of transient analysis before and after the feeding pulse is triggered, and the timing of feeding trigger, data acquisition and signal analysis is precisely synchronized. The density profile change is calculated within the selected transient analysis time window, and the deposition location and total number of deposited particles are obtained based on the density profile change; wherein the transient analysis time window is a time window much smaller than the particle confinement time after the feed pulse is triggered. The actual feeding efficiency is calculated based on the total number of deposited particles and the calibrated number of injected particles. The actual feeding efficiency and deposition position are then compared with the target value to generate control commands to adjust the parameters of subsequent feeding pulses in real time.

2. The feeding deposition measurement and feedback method based on transient analysis according to claim 1, characterized in that, The transient analysis time window is less than one-tenth of the particle constraint time.

3. A feeding deposition measurement and feedback method based on transient analysis according to claim 1 or 2, characterized in that, The transient analysis time window is longer than the time required for the feed particles to be completely ionized.

4. The feeding deposition measurement and feedback method based on transient analysis according to claim 3, characterized in that, The calculation of density profile change within a selected transient analysis time window, and the determination of deposition location and total number of deposited particles based on the density profile change, includes: Within the selected transient analysis time window, the density profile change is calculated. The density profile change is equal to the density profile at the end of the transient analysis time window minus the density profile at the beginning of the transient analysis time window. By performing distribution fitting on the density profile variation, the radial position of the deposition peak and the deposition distribution width can be retrieved. The total number of deposited particles is calculated by radial spatial integration of the density profile change.

5. The feeding deposition measurement and feedback method based on transient analysis according to claim 4, characterized in that, The aforementioned distribution fitting of the density profile variation includes: The radial position of the deposition peak and the width of the deposition distribution are accurately inverted using a Gaussian distribution model or a polynomial fitting model.

6. The feeding deposition measurement and feedback method based on transient analysis according to claim 3, characterized in that, The actual feeding efficiency is calculated as follows: The actual feed efficiency is the percentage of the total number of deposited particles to the calibrated number of injected particles. The aforementioned generation control commands, used to adjust the parameters of subsequent feeding pulses in real time, include: The control commands are applied to the feeding unit to adjust the timing, speed, or quality of the feeding pulse, thereby achieving closed-loop control of the feeding process.

7. A feeding deposition measurement and feedback system based on transient analysis, characterized in that, The method for implementing the feed deposition measurement and feedback method based on transient analysis as described in any one of claims 1-6 includes: The transient profile measurement unit is configured to acquire the transient evolution of the plasma electron density profile with high spatiotemporal resolution. The timing coordination control unit is configured to precisely synchronize the working timing of feeding triggering, data acquisition and signal analysis in order to lock the transient analysis time window; Furthermore, the signal processing and feedback control unit is configured to: complete the calculation from the original signal to the actual feeding efficiency and deposition position within the transient analysis time window, and generate control commands to adjust the parameters of the feeding pulse in real time.

8. The feeding deposition measurement and feedback system based on transient analysis according to claim 7, characterized in that, Also includes: The feeding unit is configured to obtain a calibration curve of the number of injected particles and fuel characteristic injection parameters through offline calibration, and to use it for real-time calculation of the number of injected particles, which is suitable for ultrasonic molecular beam injection or projectile injection.

9. A feeding deposition measurement and feedback system based on transient analysis according to claim 7 or 8, characterized in that, The temporal resolution of the transient profile measurement unit should be much smaller than the transient analysis time window; at the same time, the spatial resolution of the transient profile measurement unit should be much smaller than the plasma small radius.

10. The feeding deposition measurement and feedback system based on transient analysis according to claim 8, characterized in that, The feeding unit establishes a particle number calibration database based on an offline precise calibration method, performs real-time calculation of the injected particle number through characteristic curves or relational formulas and database table interpolation, and supports custom data curve updates.

Images