A silicon carbide-based ultrathin flexible evanescent isotopic battery and a preparation method thereof

Abstract

The present application relates to nuclear energy micro energy technology, semiconductor device technology and flexible electronic technology field, provide a kind of based on silicon carbide's ultrathin flexible radiative isotope battery and preparation method thereof.It includes flexible substrate;Multiple ultrathin silicon carbide radiative transducer device units are arranged on flexible substrate, and ultrathin silicon carbide radiative transducer device unit is spaced apart from each other, and form non-continuous distributed arrangement;With the flexible circuit of ultrathin silicon carbide radiative transducer device unit electric connection;Radiation source is arranged on the surface of the ultrathin silicon carbide radiative transducer device unit or is clamped between two ultrathin silicon carbide radiative transducer device units;Radiation source and ultrathin silicon carbide radiative transducer device unit do not exist independent air gap.The present application adopts multiple ultrathin silicon carbide radiative transducer device units to be arranged in non-continuous way on flexible substrate, and is connected by flexible circuit of extensible wire, keeps the flexibility of battery and still keeps stable performance output under bending.

Description

Technical Field

[0001] This invention relates to the fields of nuclear micro-energy technology, semiconductor device technology and flexible electronics technology, specifically to an ultrathin flexible radiation isotope battery based on silicon carbide and its preparation method. Background Technology

[0002] Radiation-volt-isotope batteries (RVSBs) directly generate electricity by interacting with semiconductor materials using beta rays released from the decay of radioactive isotopes. They offer advantages such as long lifespan, maintenance-free operation, and strong environmental adaptability. However, existing RVSBs are mostly rigid structures, unsuitable for curved, flexible, or wearable applications; their non-functional layers, such as the battery substrate, are relatively thick, hindering miniaturization and integration; and their voltage and power are typically low, failing to meet the personalized power requirements of various microelectronic devices. Therefore, there is an urgent need for an RVSB that is flexible, ultra-thin, and has adjustable output to meet the energy needs of microelectronic devices in special environmental applications. Summary of the Invention

[0003] The purpose of this invention is to provide an ultrathin flexible radiation-voltaic isotope battery based on silicon carbide and its preparation method, which solves the problems of rigidity, weight and unadjustable output power of existing radiation-voltaic batteries, and realizes high power density, flexibility and flexible matching of application scenarios.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] An ultrathin flexible radiation-voltage isotope solar cell based on silicon carbide, comprising:

[0006] Flexible substrate;

[0007] Multiple ultrathin silicon carbide radiant voltage transducer units are disposed on a flexible substrate, and the ultrathin silicon carbide radiant voltage transducer units are arranged at intervals to form a discontinuous distributed arrangement;

[0008] A flexible circuit electrically connected to an ultrathin silicon carbide radiant voltage transducer unit, the flexible circuit including flexible conductive traces for collecting and outputting the output power of each transducer unit;

[0009] A radiation source is disposed on the surface of the ultrathin silicon carbide radiant voltage transducer unit or sandwiched between two ultrathin silicon carbide radiant voltage transducer units. The radiation source is used to provide β-ray irradiation to the ultrathin silicon carbide radiant voltage transducer unit. There is no independent air gap between the radiation source and the ultrathin silicon carbide radiant voltage transducer unit.

[0010] The flexible conductive traces adopt an extendable trace pattern.

[0011] Among them, the routing patterns of flexible conductive traces are meandering, serpentine, or zigzag.

[0012] The thickness of the ultrathin silicon carbide radiant voltage transducer unit is 0.5μm~50μm.

[0013] Among them, the ultrathin silicon carbide radiant voltage transducer unit includes PN structure, PIN structure, Schottky structure or heterostructure type. Among them, the PN structure and PIN structure are prepared on silicon carbide substrate by chemical vapor deposition by homoepitaxial method.

[0014] The radioactive source is a beta-ray isotope. 3 H, 63 Ni、 147 Pm, 90 Sr / 90 Y、 14 C or a mixed radioactive source;

[0015] The flexible substrate material is polyimide, polyethylene terephthalate, polybutylene terephthalate, or a composite flexible polymer material.

[0016] The ultrathin flexible radiative isotope solar cell based on silicon carbide also includes a flexible encapsulation protective layer covering the ultrathin silicon carbide radiative voltage transducer unit and the flexible circuit.

[0017] The silicon carbide-based ultrathin flexible radiation isotope battery also includes a power management module that is compatible with microelectronic devices and wearable devices.

[0018] The above-mentioned method for preparing ultrathin flexible radiation isotope solar cells based on silicon carbide includes the following steps:

[0019] S1: The flexible substrate is pre-baked in a vacuum furnace;

[0020] S2: Multiple ultrathin silicon carbide radiant voltage transducer units are bonded and integrated on a flexible substrate, and the ultrathin silicon carbide radiant voltage transducer units are connected by flexible conductive lines formed by laser etching; wherein the ultrathin silicon carbide radiant voltage transducer unit is an ultrathin silicon carbide radiant voltage transducer unit with a radiation source or an ultrathin silicon carbide radiant voltage transducer unit without a radiation source; the radiation source is deposited on the surface of the ultrathin silicon carbide radiant voltage transducer unit, or the radiation source is made into a flexible thin layer and covered on the surface of the ultrathin silicon carbide radiant voltage transducer unit, or the radiation source is sandwiched on both sides of two ultrathin silicon carbide radiant voltage transducer units to form a layered sandwich structure.

[0021] S3: After completing the layout of the devices and radiation source, the electrodes of each ultrathin silicon carbide radiation transducer unit are led out by micro-welding and connected to the flexible wires according to the predetermined electrical connection method.

[0022] S4: The flexible substrate is flexibly bent in a predetermined flexible winding manner and covered with a flexible encapsulation protective layer to obtain an ultrathin flexible radiation isotope cell based on silicon carbide.

[0023] In step S5, the flexible winding method is either rectangular winding or Z-shaped winding.

[0024] In step S2, when the ultrathin silicon carbide radiative voltage transducer unit is an ultrathin silicon carbide radiative voltage transducer unit with a radiation source, the radiation source layout is completed by bonding and integrating the ultrathin silicon carbide radiative voltage transducer unit with the radiation source onto a flexible substrate. Preferably, the gaseous radiation source is prepared by first depositing the radiation source on the ultrathin silicon carbide radiative voltage transducer unit and then integrating it onto the flexible substrate. The fabrication process of the ultrathin silicon carbide radiative voltage transducer unit with a gaseous radiation source is as follows: a metal (e.g., titanium) is deposited on the P-layer electrode of the ultrathin silicon carbide radiative voltage transducer unit using magnetron sputtering; then, a low-pressure tritium absorption system is used to absorb the tritium at 350°C. 3 H diffuses into the metal, forming a PIN-configured ultrathin silicon carbide radiation transducer unit with a tritium metal radiation source.

[0025] When the ultrathin silicon carbide radiant voltage transducer unit in step S2 is an ultrathin silicon carbide radiant voltage transducer unit without a radiation source, step S2 specifically includes the following steps: bonding and integrating multiple ultrathin silicon carbide radiant voltage transducer units onto a flexible substrate, connecting the ultrathin silicon carbide radiant voltage transducer units through flexible conductive traces formed by laser etching; then depositing a radiation source on the ultrathin silicon carbide radiant voltage transducer unit to complete the radiation source layout. For liquid or solid radiation sources, the preferred method is to first integrate the ultrathin silicon carbide radiant voltage transducer unit onto the flexible substrate and then deposit the radiation source.

[0026] The beneficial effects of this invention are as follows:

[0027] (1) The present invention employs multiple ultrathin silicon carbide radiant voltage transducer units disposed on a flexible substrate in a discontinuous manner and connected by a flexible circuit with extendable traces to maintain the flexibility of the battery and maintain stable performance output under bending.

[0028] (2) The battery system configuration proposed in this invention contains fewer non-functional layer materials such as substrate, and has a higher power density.

[0029] (3) The ultrathin flexible radiative voltage isotope battery based on silicon carbide of the present invention can be flexibly matched to meet the personalized power requirements of different microelectronic devices by changing the number of ultrathin silicon carbide radiative voltage transducer units, adjusting the parameters of the flexible circuit, or adjusting the coupling power management module. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of the structure of the ultrathin flexible radiation isotope battery based on silicon carbide according to the present invention.

[0031] Figure 2 This is a cross-sectional view of an embodiment of the relative positions of the radiation source and the ultrathin silicon carbide radiation voltage isotope battery based on silicon carbide according to the present invention.

[0032] Figure 3 This is a cross-sectional view of another embodiment of the relative positions of the radiation source and the ultrathin silicon carbide radiation voltage isotope battery based on silicon carbide according to the present invention.

[0033] Figure 4 This is a structural diagram of a rectangular flexible wound ultrathin flexible radiation isotope battery based on silicon carbide, as shown in Embodiment 1 of the present invention.

[0034] Figure 5 This is a structural diagram of an ultrathin flexible radiation isotope cell based on silicon carbide with a Z-shaped flexible stack, as shown in Embodiment 4 of the present invention.

[0035] The attached figures are labeled as follows: 1-flexible substrate, 2-ultra-thin silicon carbide radiative voltage transducer unit, 3-flexible circuit, and 4-radiation source. Detailed Implementation

[0036] The technical solutions of the embodiments of the invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the invention, and not all of them. Unless otherwise specified, the embodiments and features in the embodiments of the present invention can be combined with each other. Based on the embodiments of the invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the invention.

[0037] It should be noted that if the embodiments of the invention involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicators will also change accordingly.

[0038] Furthermore, if the embodiments of the invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, "multiple" refers to two or more. Moreover, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of a person skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by the invention.

[0039] See Figure 1 and Figure 2 The present invention provides an ultrathin flexible radiation-voltaic isotope battery based on silicon carbide, which includes a flexible substrate 1, multiple ultrathin silicon carbide radiation-voltaic transducer units 2, a flexible circuit 3, and a radiation source 4.

[0040] Among them, multiple ultrathin silicon carbide radiant voltage transducer units 2 are disposed on the flexible substrate 1, and the multiple ultrathin silicon carbide radiant voltage transducer units 2 are spaced apart from each other to form a non-continuous distributed arrangement;

[0041] The flexible circuit 3 is electrically connected to the ultra-thin silicon carbide radiant voltage transducer unit 2. The flexible circuit 3 includes flexible conductive traces for collecting and outputting the output power of each transducer unit.

[0042] Radiation source 4 is used to provide beta-ray irradiation to the ultrathin silicon carbide radiative voltage transducer unit 2; there is no independent air gap between radiation source 4 and ultrathin silicon carbide radiative voltage transducer unit 2. See also Figure 2 The radiation source 4 is disposed on the surface of the ultrathin silicon carbide radiant voltage transducer unit 2, see [reference]. Figure 3 The radiation source 4 is sandwiched between two ultrathin silicon carbide radiant transducer units 2 to form a sandwich structure.

[0043] Among them, the flexible conductive trace adopts a stretchable trace pattern, so that when the battery bends, the bending stress is mainly released by the flexible substrate 1 and the stretchable wire, thereby reducing the mechanical stress acting on the device unit and maintaining stable electrical output performance.

[0044] Preferably, the routing pattern of the flexible conductive trace is meandering, serpentine, or zigzag.

[0045] The thickness of the ultrathin silicon carbide radiant voltage transducer unit 2 is 0.5 μm to 50 μm, preferably less than 20 μm.

[0046] Among them, the ultrathin silicon carbide radiant voltage transducer unit 2 includes PN structure, PIN structure, Schottky structure or heterostructure, wherein the PN structure and PIN structure are prepared on the silicon carbide substrate by chemical vapor deposition using homoepitaxial method.

[0047] The ultrathin silicon carbide radiant voltage transducer unit 2 is prepared by photoelectrochemical etching, ultrafast laser processing, or substrate thinning.

[0048] The ultrathin silicon carbide radiant voltage transducer unit 2 is directly integrated with the flexible substrate 1 through microfabrication technology, which includes micropatterning, thin film deposition, and welding or bonding methods.

[0049] Wherein, the radioactive source 4 is a beta-ray isotope, and the radioactive source 4 is 3 H, 63 Ni、 147 Pm, 90 Sr / 90 Y、 14 C or a hybrid radioactive source 4. Further, the radioactive source 4 can be directly deposited on the surface of the ultrathin silicon carbide radiant voltage transducer unit 2 by methods such as electrodeposition, sputtering deposition, chemical deposition or sol-gel deposition, or it can be made into a flexible thin layer and covered on the surface of the ultrathin silicon carbide radiant voltage transducer unit 2, or two ultrathin silicon carbide radiant voltage transducer units 2 can be located on both sides of the radioactive source 4 to form a layered sandwich structure.

[0050] The flexible substrate 1 is made of polyimide, polyethylene terephthalate (PET), polybutylene terephthalate (PEN), or a composite flexible polymer material.

[0051] The ultrathin flexible radiative isotope solar cell based on silicon carbide also includes a flexible encapsulation protective layer covering the ultrathin silicon carbide radiative voltage transducer unit 2 and the flexible circuit 3.

[0052] The silicon carbide-based ultrathin flexible radiative isotope battery also includes a power management module compatible with microelectronic devices and wearable devices. This power management module allows the silicon carbide-based ultrathin flexible radiative isotope battery to be flexibly matched as a power source for long-term maintenance-free power supply scenarios such as microelectronic devices and wearable devices.

[0053] Example 1:

[0054] In this embodiment, the ultrathin silicon carbide radiant voltage transducer unit 2 has a PIN structure. The radiation source 4 is electroplated to form a flexible thin layer and covers the surface of the ultrathin silicon carbide radiant voltage transducer unit 2.

[0055] The fabrication process of ultrathin silicon carbide photovoltaic transducer unit 2 is as follows: A PIN structure of silicon carbide is homoepitaxially grown on an N-type silicon carbide substrate using chemical vapor deposition. Trimethylaluminum and nitrogen are used as dopant sources for P-type and N-type doping, respectively. The thickness of the PIN epitaxial layer is 30 μm. After growth, a femtosecond laser is focused below 32-35 μm on the surface to perform wafer-level scanning, forming a uniform modified layer below 32-35 μm. Then, the modified layer is separated from the upper epitaxial structure and the lower substrate by ultrasonication to obtain the PIN junction ultrathin silicon carbide. Based on this, a PIN-structured ultrathin silicon carbide photovoltaic transducer unit 2 with a basic unit area of ​​10 mm × 10 mm is fabricated.

[0056] The fabrication process of the silicon carbide-based ultrathin flexible radiation-voltage isotope battery of the present invention is as follows:

[0057] S1: A 25 μm polyimide film was selected as the flexible substrate 1 and pre-baked in a vacuum oven to remove residual moisture and stress.

[0058] S2: Subsequently, the 200 prepared 10 mm × 10 mm PIN-configured ultrathin silicon carbide radiant photovoltaic transducer units 2 were bonded and integrated onto a polyimide thin film flexible substrate 1. The ultrathin silicon carbide radiant photovoltaic transducer units 2 were connected by flexible conductive lines formed by laser etching. The lines adopted a meandering design, so that the mechanical stress during bending or stretching was mainly borne by the lines and the flexible substrate 1, thereby maintaining stable electrical performance. The radioactive source 4 was selected with a half-life of approximately 100 years. 63 Ni, formed into 1 μm through electroplating 63 Ni thin film radioactive source 4 self-supporting film. 63 The Ni thin-film radiation source 4 has a self-supporting film covering the surface of the ultrathin silicon carbide radiative voltage transducer unit 2.

[0059] S3: After completing the layout of the devices and radiation source 4, the electrodes of each ultrathin silicon carbide radiant voltage transducer unit 2 are led out by micro-soldering and connected to the flexible wires according to the predetermined electrical connection method. In this embodiment, each ultrathin silicon carbide radiant voltage transducer unit 2 is independently connected to the flexible circuit 3, and the positive and negative terminals of each ultrathin silicon carbide radiant voltage transducer unit 2 are connected in parallel to the flexible circuit 3 to improve the overall output current and enhance the output stability in the event of failure of a single device.

[0060] S4: Finally, see Figure 4 The flexible substrate 1, which integrates the ultrathin silicon carbide radiant transducer unit 2 obtained in step S3, is flexibly bent in a rectangular flexible winding manner, and a flexible encapsulation protective layer with a thickness of 20 micrometers is covered on the surface to ensure the safe fixation of the radiation source 4 and enhance the overall structural stability.

[0061] The ultrathin flexible radiative isotope solar cell based on silicon carbide obtained in this embodiment has an open-circuit voltage of approximately 1.6 V, a short-circuit current of 1.0 μA, a fill factor of 0.7, and a maximum output power of approximately 1.1 μW.

[0062] Example 2:

[0063] In this embodiment, the ultrathin silicon carbide radiant voltage transducer unit 2 has a PIN structure. The radiation source 4 is deposited on the surface of the ultrathin silicon carbide radiant voltage transducer unit 2 by sputtering deposition.

[0064] The fabrication process of ultrathin silicon carbide photovoltaic transducer unit 2 is as follows: A PIN structure of silicon carbide is homoepitaxially grown on an N-type silicon carbide substrate using chemical vapor deposition. Trimethylaluminum and nitrogen are used as doping sources for P-type and N-type doping, respectively. The thickness of the PIN epitaxial layer is 15 μm. After growth, a femtosecond laser is focused below 17-20 μm on the surface to perform wafer-level scanning, forming a uniform modified layer below 17-20 μm. Then, the modified layer is separated from the upper epitaxial structure and the lower substrate by ultrasonication to obtain a PIN junction ultrathin silicon carbide. Based on this, a PIN-structured ultrathin silicon carbide photovoltaic transducer unit 2 with a basic unit area of ​​10 mm × 10 mm is fabricated.

[0065] The fabrication process of the silicon carbide-based ultrathin flexible radiation-voltage isotope battery of the present invention is as follows:

[0066] S1: A 25 μm polyimide film was selected as the flexible substrate 1 and pre-baked in a vacuum oven to remove residual moisture and stress.

[0067] S2: Subsequently, the 100 prepared 10 mm × 10 mm PIN-configured ultrathin silicon carbide radiative voltage transducer units 2 with titanium tritide radioactive sources are bonded and integrated onto a polyimide thin film flexible substrate 1. The device units are connected by flexible conductive lines formed by laser etching. The lines adopt a meandering design so that the mechanical stress is mainly borne by the lines and the flexible substrate 1 when bending or stretching, thereby maintaining stable electrical performance. The fabrication process of the PIN-configured ultrathin silicon carbide radiative voltage transducer unit 2 with titanium tritide radioactive source 4 is as follows: A 0.5 μm titanium layer is deposited on the P-layer electrode of the ultrathin silicon carbide radiative voltage transducer unit 2 by magnetron sputtering; then, using a low-pressure tritium absorption system, at 350°C, the titanium tritide radioactive source 4 is... 3 H diffuses into Ti to form a PIN-configured ultrathin silicon carbide radiative voltage transducer unit 2 with a titanium tritide radioactive source 4.

[0068] S3: After completing the layout of the devices and radiation source 4, the electrodes of each ultrathin silicon carbide radiant voltage transducer unit 2 are led out by micro-soldering and connected to the flexible wires according to the predetermined electrical connection method. Each ultrathin silicon carbide radiant voltage transducer unit 2 is independently connected to the flexible circuit 3, and the positive and negative terminals of each device unit are connected in parallel to the flexible circuit 3 to improve the overall output current and enhance the output stability in the event of failure of a single device.

[0069] S4: Finally, the flexible substrate 1, which integrates the ultra-thin silicon carbide radiant voltage transducer unit 2 obtained in step S3, is flexibly bent in a rectangular flexible winding manner, and a flexible encapsulation protective layer (20 μm thick) is covered on the surface of the battery to ensure the safe fixation of the radiation source 4 and enhance the overall structural stability.

[0070] The ultrathin flexible radiative isotope solar cell based on silicon carbide obtained in this embodiment has an open-circuit voltage of approximately 1.8 V, a short-circuit current of 1.5 μA, a fill factor of 0.7, and a maximum output power of approximately 1.9 μW.

[0071] Example 3:

[0072] In this embodiment, the ultrathin silicon carbide radiant voltage transducer unit 2 has a PIN structure. The radiation source 4 is electroplated to form a flexible thin layer and covers the surface of the ultrathin silicon carbide radiant voltage transducer unit 2.

[0073] The fabrication process of the ultrathin silicon carbide photovoltaic transducer unit 2 is as follows: Homoein epitaxy is performed on a P-type silicon carbide substrate using chemical vapor deposition to sequentially obtain a heavily doped N-type layer, an unintentionally doped I-type layer, and a heavily doped P-type layer. Trimethylaluminum and nitrogen are used as doping sources for the P-type and N-type doping, respectively. The total thickness of the PIN epitaxial layer is 30 μm. After growth, the PIN epitaxial layer structure is peeled off from the substrate using photoelectrochemical etching, utilizing its dop-selective etching properties. Based on this, the PIN-configured ultrathin silicon carbide photovoltaic transducer unit 2 with a basic unit area of ​​10 mm × 10 mm is fabricated.

[0074] The fabrication process of the silicon carbide-based ultrathin flexible radiation-voltage isotope battery of the present invention is as follows:

[0075] S1: A 25 μm polyimide film was selected as the flexible substrate 1 and pre-baked in a vacuum oven to remove residual moisture and stress.

[0076] S2: Subsequently, the above-mentioned 200 10 mm × 10 mm PIN-configured ultrathin silicon carbide radiant voltage transducer units 2 are bonded and integrated onto a polyimide thin film flexible substrate 1. The device units are connected by flexible conductive lines formed by laser etching. The wires adopt a meandering design so that when bent or stretched, the mechanical stress is mainly borne by the wires and the flexible substrate 1, thereby maintaining stable electrical performance. 63 Ni radioactive source 4 is formed into a 1 μm diameter by electroplating. 63 The Ni thin-film radioactive source 4 has a self-supporting film covering the surface of the ultrathin silicon carbide radiative voltage transducer unit 2.

[0077] S3: After completing the layout of the devices and radiation source 4, the electrodes of each ultra-thin silicon carbide radiation transducer unit 2 are led out by micro-soldering and connected to the flexible wires according to the predetermined electrical connection method. Two adjacent silicon carbide device units are first connected in series by the flexible wire to increase the output voltage, and then the series-connected device group is connected in parallel to the flexible circuit 3, thereby increasing the total output power while meeting the required output voltage.

[0078] S4: Finally, the battery is flexibly bent in a rectangular flexible winding manner, and a flexible encapsulation protective layer (5 μm thick) is covered on the battery surface to ensure that the radiation source 4 is securely fixed and to enhance the overall structural stability.

[0079] The ultrathin flexible radiative isotope solar cell based on silicon carbide obtained in this embodiment has an open-circuit voltage of approximately 3.0 V, a short-circuit current of 0.6 μA, a fill factor of 0.7, and a maximum output power of approximately 1.2 μW.

[0080] Example 4:

[0081] In this embodiment, the ultrathin silicon carbide radiative voltage transducer unit 2 has a Schottky structure. The radiation source 4 and the ultrathin silicon carbide radiative voltage transducer unit 2 form a sandwich structure.

[0082] The fabrication process of ultrathin silicon carbide photovoltaic transducer unit 2 is as follows: A lightly doped N-type silicon carbide thin film is homoepitaxially grown on a heavily doped N-type silicon carbide substrate using chemical vapor deposition, with nitrogen gas selected as the N-type dopant source. The thickness of the lightly doped N-type silicon carbide thin film is 15 μm. After growth, the heavily doped silicon carbide substrate is removed by diamond wheel thinning or mechanical polishing to obtain a 20 μm ultrathin silicon carbide layer. Based on this, a Schottky junction ultrathin silicon carbide photovoltaic transducer unit 2 with a basic unit area of ​​10 mm × 10 mm is fabricated.

[0083] The fabrication process of the silicon carbide-based ultrathin flexible radiation-voltage isotope battery of the present invention is as follows:

[0084] S1: A 20 μm polyimide film was selected as the flexible substrate 1 and pre-baked in a vacuum oven to remove residual moisture and stress.

[0085] S2: Subsequently, the 200 prepared 10 mm × 10 mm Schottky junction ultrathin silicon carbide radiant voltage transducer units 2 are bonded and integrated onto a polyimide thin film flexible substrate 1. The device units are connected by flexible conductive traces formed by screen printing. The traces adopt a meandering design so that the mechanical stress is mainly borne by the traces and the flexible substrate 1 when bending or stretching, thereby maintaining stable electrical performance. In this step, the 200 Schottky junction ultrathin silicon carbide radiant voltage transducer units 2 are divided into 100 groups. The 100 groups are arranged as follows: odd-numbered groups are placed on one side of the flexible substrate 1, and even-numbered groups are placed on the other side of the flexible substrate 1. Specifically, the first group of Schottky junction ultrathin silicon carbide radiant voltage transducer units is placed on one side of the flexible substrate 1, the second group of Schottky junction ultrathin silicon carbide radiant voltage transducer units is placed on the other side of the flexible substrate 1, the third group of Schottky junction ultrathin silicon carbide radiant voltage transducer units is located on the same side as the first group of Schottky junction ultrathin silicon carbide radiant voltage transducer units, and so on, integrating 100 groups of Schottky junction ultrathin silicon carbide radiant voltage transducer units on the flexible substrate 1. 63 Ni radioactive source 4 is formed into a 1 μm diameter by electroplating. 63 The Ni thin-film radiation source 4 has a self-supporting film covering the surface of the ultrathin silicon carbide radiative voltage transducer unit 2. Only one Schottky junction ultrathin silicon carbide radiative voltage transducer unit in each group of Schottky junction ultrathin silicon carbide radiative voltage transducer units has a self-supporting film covering the surface of the unit. 63 Ni thin film radioactive source 4.

[0086] S3: After completing the layout of the devices and radiation source 4, the electrodes of each ultrathin silicon carbide radiant voltage transducer unit 2 are led out by micro-soldering and connected to the flexible wires according to the predetermined electrical connection method. Each ultrathin silicon carbide radiant voltage transducer unit 2 is independently connected to the flexible circuit 3, and the positive and negative terminals of each ultrathin silicon carbide radiant voltage transducer unit 2 are connected in parallel to the flexible circuit 3 to improve the overall output current and enhance the output stability in the event of individual device failure.

[0087] S4: Finally, see Figure 5 Flexible folding is performed using a Z-shaped flexible stacking method, so that... 63 A Ni thin film is placed between two silicon carbide radiant transducer units to form a sandwich structure, and a flexible encapsulation protective layer (5 μm thick) is covered on the battery surface to ensure the safe fixation of the radiation source 4 and enhance the overall structural stability.

[0088] This design yields an isotope battery system with an open-circuit voltage of approximately 1.5 V, a short-circuit current of 1.1 μA, a fill factor of 0.75, and a maximum output power of approximately 1.2 μW.

[0089] Example 5:

[0090] In this embodiment, the ultrathin silicon carbide radiant voltage transducer unit 2 has a PIN structure. The radiation source 4 is deposited on the surface of the ultrathin silicon carbide radiant voltage transducer unit 2 by sputtering deposition.

[0091] The fabrication process of the ultrathin silicon carbide photovoltaic transducer unit 2 is as follows: Homoein epitaxy is performed on a P-type silicon carbide substrate using chemical vapor deposition to sequentially obtain a heavily doped N-type layer, an unintentionally doped I-type layer, and a heavily doped P-type layer. Trimethylaluminum and nitrogen are used as doping sources for the P-type and N-type doping, respectively. The total thickness of the PIN epitaxial layer is 20 μm. After growth, the PIN epitaxial layer structure is peeled off from the substrate using photoelectrochemical etching with dop-selective etching. Based on this, an ultrathin silicon carbide photovoltaic transducer unit 2 with a basic unit area of ​​10 mm × 10 mm is fabricated.

[0092] The fabrication process of the silicon carbide-based ultrathin flexible radiation-voltage isotope battery of the present invention is as follows:

[0093] S1: A 20 μm polyethylene terephthalate film was selected as the flexible substrate 1 and pre-baked in a vacuum oven to remove residual moisture and stress.

[0094] S2: Subsequently, the 100 prepared 10 mm × 10 mm PIN-configured ultrathin silicon carbide radiative voltage transducer units 2 with titanium tritide radioactive sources 4 were bonded and integrated onto a polyethylene terephthalate thin film flexible substrate 1. The device units were connected by flexible conductive traces formed by screen printing. The traces adopted a serpentine design so that the mechanical stress during bending or stretching was mainly borne by the traces and the flexible substrate 1, thereby maintaining stable electrical performance. The fabrication process of the PIN-configured ultrathin silicon carbide radiative voltage transducer unit 2 with titanium tritide radioactive sources 4 is as follows: A 0.5 μm titanium layer was deposited on the P-layer electrode of the ultrathin silicon carbide radiative voltage transducer unit 2 by magnetron sputtering; then, using a low-pressure tritium absorption system, at 350°C, the titanium tritide radioactive sources 4 were... 3 H diffuses into Ti to form a PIN-configured ultrathin silicon carbide radiative voltage transducer unit 2 with a titanium tritide radioactive source 4.

[0095] S3: After completing the layout of the devices and radiation source 4, the electrodes of each ultrathin silicon carbide radiant voltage transducer unit 2 are led out by micro-soldering and connected to the flexible wires according to the predetermined electrical connection method. Each ultrathin silicon carbide radiant voltage transducer unit 2 is independently connected to the flexible circuit 3, and the positive and negative terminals of each device unit are connected in parallel to the flexible circuit 3 to improve the overall output current and enhance the output stability in the event of failure of a single device.

[0096] S4: Finally, the battery is flexibly bent in a rectangular flexible winding manner, and a flexible encapsulation protective layer with a thickness of about 20μm is covered on the surface of the battery to ensure that the radiation source 4 is securely fixed and to enhance the overall structural stability.

[0097] In addition, the positive and negative leads of the battery system can be coupled to the power management module, which is configured with a voltage amplification factor of 3 and a power output pulse amplification factor of 1000.

[0098] The open-circuit voltage of the silicon carbide-based ultrathin flexible radiative isotope cell obtained in this embodiment is about 5.0 V, and the maximum pulse output power is about 1.5 mW.

[0099] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention. The above embodiments are provided only for the purpose of describing the present invention and are not intended to limit the present invention. Parts not described in detail in this specification are well-known in the art and are not intended to limit the scope of the present invention. The scope of the present invention is defined by the appended claims. All equivalent substitutions and modifications made without departing from the spirit and principle of the present invention should be covered within the scope of the present invention.

Claims

1. An ultrathin flexible radiation-voltage isotope battery based on silicon carbide, characterized in that, include: Flexible substrate; Multiple ultrathin silicon carbide radiant voltage transducer units are disposed on a flexible substrate, and the ultrathin silicon carbide radiant voltage transducer units are arranged at intervals to form a discontinuous distributed arrangement; A flexible circuit electrically connected to an ultra-thin silicon carbide radiant voltage transducer unit, the flexible circuit including flexible conductive traces for collecting and outputting the output power of each transducer unit; the flexible conductive traces adopt an extendable trace pattern, the trace pattern of the flexible conductive traces being meandering, serpentine, or zigzag. A radiation source is disposed on the surface of the ultrathin silicon carbide radiant voltage transducer unit or sandwiched between two ultrathin silicon carbide radiant voltage transducer units. The radiation source is used to provide β-ray irradiation to the ultrathin silicon carbide radiant voltage transducer unit. There is no independent air gap between the radiation source and the ultrathin silicon carbide radiant voltage transducer unit. Each individual ultrathin silicon carbide radiant voltage transducer unit is independently connected to the flexible circuit.

2. The ultrathin flexible radiation isotope battery based on silicon carbide according to claim 1, characterized in that, The thickness of the ultrathin silicon carbide radiant voltage transducer unit is 0.5μm~50μm.

3. The ultrathin flexible radiation isotope battery based on silicon carbide according to claim 1, characterized in that, The ultrathin silicon carbide radiant voltage transducer unit includes PN structure, PIN structure, Schottky structure or heterostructure, wherein the PN structure and PIN structure are fabricated on the silicon carbide substrate by chemical vapor deposition using homoepitaxial method; The radioactive source is a beta-ray isotope. 3 H, 63 Ni、 147 Pm, 90 Sr / 90 Y、 14 C or a mixed radioactive source; The flexible substrate material is polyimide, polyethylene terephthalate, polybutylene terephthalate, or a composite flexible polymer material.

4. The ultrathin flexible radiation isotope battery based on silicon carbide according to claim 1, characterized in that, The silicon carbide-based ultrathin flexible radiative isotope solar cell also includes a flexible encapsulation protective layer covering the ultrathin silicon carbide radiative voltage transducer unit and the flexible circuit.

5. The ultrathin flexible radiation isotope battery based on silicon carbide according to claim 1, characterized in that, The silicon carbide-based ultrathin flexible radiation isotope battery also includes a power management module compatible with microelectronic devices and wearable devices.

6. The method for preparing an ultrathin flexible radiation-voltage isotope battery based on silicon carbide according to any one of claims 1 to 5, characterized in that, Includes the following steps: S1: The flexible substrate is pre-baked in a vacuum furnace; S2: Multiple ultrathin silicon carbide radiant voltage transducer units are bonded and integrated on a flexible substrate, and the ultrathin silicon carbide radiant voltage transducer units are connected by flexible conductive lines formed by laser etching; wherein the ultrathin silicon carbide radiant voltage transducer unit is an ultrathin silicon carbide radiant voltage transducer unit with a radiation source or an ultrathin silicon carbide radiant voltage transducer unit without a radiation source; the radiation source is deposited on the surface of the ultrathin silicon carbide radiant voltage transducer unit, or the radiation source is made into a flexible thin layer and covered on the surface of the ultrathin silicon carbide radiant voltage transducer unit, or the radiation source is sandwiched on both sides of two ultrathin silicon carbide radiant voltage transducer units to form a layered sandwich structure. S3: After completing the layout of the devices and radiation source, the electrodes of each ultrathin silicon carbide radiation transducer unit are led out by micro-welding and connected to the flexible wires according to the predetermined electrical connection method. S4: The flexible substrate is flexibly bent in a predetermined flexible winding manner and covered with a flexible encapsulation protective layer to obtain an ultrathin flexible radiation isotope cell based on silicon carbide.

7. The method for preparing an ultrathin flexible radiation-voltage isotope battery based on silicon carbide according to claim 6, characterized in that, The flexible winding method in step S5 is either rectangular winding or Z-shaped winding.

8. The method for preparing an ultrathin flexible radiation-voltage isotope battery based on silicon carbide according to claim 6, characterized in that, When the ultrathin silicon carbide radiant voltage transducer unit in step S2 is an ultrathin silicon carbide radiant voltage transducer unit with a radiation source, the radiation source layout is completed by bonding and integrating the ultrathin silicon carbide radiant voltage transducer unit with the radiation source onto the flexible substrate. When the ultrathin silicon carbide radiant voltage transducer unit in step S2 is an ultrathin silicon carbide radiant voltage transducer unit without a radiation source; step S2 specifically includes the following steps: bonding and integrating multiple ultrathin silicon carbide radiant voltage transducer units onto a flexible substrate, and connecting the ultrathin silicon carbide radiant voltage transducer units with flexible conductive traces formed by laser etching; then depositing a radiation source on the ultrathin silicon carbide radiant voltage transducer unit to complete the radiation source layout.

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