A high thermal conductivity polyetheretherketone composite material, its preparation method and application

Abstract

This invention belongs to the technical field of polyetheretherketone (PEEK) composite materials, and relates to a high thermal conductivity PEEK composite material, its preparation method, and its applications. The high thermal conductivity PEEK composite material disclosed in this invention, by weight, comprises: 50-85 parts PEEK, 10-30 parts one-dimensional fiber material, 1-15 parts boron nitride, and 0.1-20 parts electromagnetically irradiated silicon carbide; the one-dimensional fiber material is short-cut fiber with a length of 1-15 mm; the electromagnetically irradiated silicon carbide is obtained by irradiating silicon carbide with an average particle size of 10-80 µm in a 2-6 GHz electromagnetic wave for 5-20 minutes. The PEEK composite material obtained by this invention possesses high strength, high hardness, high wear resistance, and high thermal conductivity, simultaneously meeting the application requirements of high-end technical fields such as aerospace, automotive industry, electronic semiconductors, and medical devices.

Description

Technical Field

[0001] This invention belongs to the technical field of polyetheretherketone composite materials, and relates to a high thermal conductivity polyetheretherketone composite material, its preparation method and application. Background Technology

[0002] Polyetheretherketone (PEEK), a high-performance thermoplastic, is widely used in high-end fields such as aerospace, automotive manufacturing, and medical devices due to its excellent mechanical properties, heat resistance, and chemical corrosion resistance. However, with the development of technology and the increasing demands of industrial applications, higher requirements are being placed on the performance of PEEK, especially in terms of strength, hardness, wear resistance, and thermal conductivity.

[0003] With increasing industrial demands, single polyetheretherketone (PEEK) materials have limitations in certain applications requiring high load, wear resistance, and thermal conductivity. Carbon fiber (CF) possesses high strength, high modulus, and low density. Boron nitride (BN) is an inorganic material with high hardness, high wear resistance, and high thermal stability, effectively improving the hardness and wear resistance of composite materials. Silicon carbide (SiC) exhibits high hardness, high strength, excellent thermal stability, and extremely high thermal conductivity. To further improve the overall performance of PEEK, reinforcement techniques are commonly employed, such as introducing materials like carbon fiber (CF), boron nitride (BN), and silicon carbide (SiC) to enhance the material's mechanical strength and lightweight properties. Existing research has demonstrated that adding boron nitride with gradient particle sizes can effectively improve the wear resistance of PEEK composites; however, this approach cannot simultaneously improve the thermal conductivity of PEEK composites, limiting its application in other fields. Therefore, there is a need to develop a PEEK composite material that combines high strength, high hardness, high wear resistance, and high thermal conductivity to meet the demands of high-performance industrial applications. Summary of the Invention

[0004] The purpose of this invention is to address the aforementioned problems in the existing technology by proposing a polyetheretherketone composite material that combines high strength, high hardness, high wear resistance, and high thermal conductivity, thereby meeting the application needs of high-end technology fields such as aerospace, automotive industry, electronic semiconductors, and medical devices.

[0005] The first objective of this invention is achieved through the following technical solution: A high thermal conductivity polyether ether ketone composite material, by weight, comprises: 50-85 parts polyether ether ketone, 10-30 parts one-dimensional fiber material, 1-15 parts boron nitride, and 0.1-20 parts silicon carbide irradiated by electromagnetic waves. The one-dimensional fiber material is short-cut fiber with a length of 1~15mm; The electromagnetically irradiated silicon carbide is obtained by irradiating silicon carbide with an average particle size of 10-80 μm in electromagnetic waves of 2-6 GHz for 5-20 minutes.

[0006] Preferably, the raw materials of the high thermal conductivity polyether ether ketone composite material include: 70-85 parts polyether ether ketone, 16-25 parts one-dimensional fiber material, 5-15 parts boron nitride, and 2-10 parts silicon carbide irradiated by electromagnetic waves.

[0007] Further preferred, the raw materials of the high thermal conductivity polyether ether ketone composite material include: 80 parts polyether ether ketone, 20 parts carbon fiber, 5 parts boron nitride, and 5 parts silicon carbide irradiated by electromagnetic waves.

[0008] Preferably, the mass percentage of polyetheretherketone in the high thermal conductivity polyetheretherketone composite material raw material is 56~85wt%.

[0009] Preferably, the mass percentage of one-dimensional fiber material in the high thermal conductivity polyether ether ketone composite material raw material is 16~19wt%.

[0010] Preferably, the molecular weight of the polyether ether ketone is 70,000 to 100,000.

[0011] Preferably, the silicon carbide is a three-dimensional bulk material.

[0012] Preferably, the average particle size of the silicon carbide is 40~60μm.

[0013] Preferably, the irradiated silicon carbide is obtained by irradiating silicon carbide in electromagnetic waves of 2-5 GHz for 10-15 minutes.

[0014] Preferably, the silicon carbide is pretreated before irradiation, and the pretreatment includes at least one of ultrasonic cleaning, acid washing, alkali washing, and alcohol washing.

[0015] Preferably, the thickness of the boron nitride is 0.1~10 μm.

[0016] Further preferably, the boron nitride is lamellar hexagonal boron nitride (h-BN) with an average thickness of 0.5~5μm.

[0017] Preferably, the boron nitride surface is grafted with groups, including one or more of hydroxyl, carboxyl, amino, mercapto, and halogen atoms.

[0018] Further preferably, the boron nitride surface is grafted with hydroxyl groups.

[0019] Preferably, the one-dimensional fiber material includes one or more of carbon fiber, glass fiber, aramid fiber, quartz fiber, polyethylene fiber, and PBO fiber.

[0020] Further preferably, the one-dimensional fiber material is carbon fiber, and the length of the carbon fiber is 1~10mm.

[0021] Preferably, the one-dimensional fiber material is pretreated, and the pretreatment includes one or more of the following: acid washing, alkali washing, oxidation, plasma treatment, and coupling groups.

[0022] Preferably, the high thermal conductivity polyetheretherketone composite material has a thermal conductivity ≥0.5 W / (m·K) and a tensile strength ≥200MPa.

[0023] Further preferably, the thermal conductivity of the high thermal conductivity polyetheretherketone composite material is ≥0.55 W / (m·K), and the tensile strength is ≥250MPa.

[0024] The second objective of this invention is achieved through the following technical solution: A method for preparing a high thermal conductivity polyetheretherketone composite material includes the following steps: The raw materials are mixed, melt-blended, and then shaped to obtain the final product. And / or, dissolve polyetheretherketone in a solvent, then add the remaining raw materials other than polyetheretherketone and mix well to obtain a mixture, then place it in a twin-screw extruder for melt blending, extrusion and molding to obtain the final product.

[0025] Preferably, the melt blending temperature is 320~420℃ and the time is 3~15min.

[0026] Preferably, the molding process includes one or more of thermoforming, injection molding, and 3D printing.

[0027] Preferably, the molding temperature is 350~420℃, the pressure is 10~50MPa, and the time is 5~10min.

[0028] The third objective of this invention is achieved through the following technical solution: Applications of a high thermal conductivity polyetheretherketone composite material in aerospace, automotive industry, electronic semiconductors, medical devices and other fields.

[0029] The fourth objective of this invention is achieved through the following technical solution: A spacecraft thermal protection device, the raw material of which includes 0.01~100wt% of high thermal conductivity polyetheretherketone composite material.

[0030] Preferably, the spacecraft thermal protection device is made of a high thermal conductivity polyetheretherketone composite material through hot pressing and / or injection molding.

[0031] Preferably, the spacecraft thermal protection device is made by mixing a high thermal conductivity polyether ether ketone composite material with additives, followed by hot pressing and / or injection molding.

[0032] Further preferably, the additives include antioxidants, UV stabilizers, lubricants, antistatic agents, and compatibilizers.

[0033] More preferably, the antioxidant includes a primary antioxidant and a high-temperature resistant secondary antioxidant.

[0034] More preferably, the compatibilizer is an ultra-high molecular weight polysiloxane.

[0035] Compared with the prior art, the present invention has the following beneficial effects: 1. This invention incorporates one-dimensional fiber material, two-dimensional boron nitride, and three-dimensional silicon carbide into a polyether ether ketone matrix. Through the interfacial synergy and structural complementarity between the multi-dimensional materials, an efficient thermal conductivity pathway is constructed, which synergistically enhances the thermal conductivity of the polyether ether ketone composite material.

[0036] 2. In the high thermal conductivity polyether ether ketone composite material of the present invention, one-dimensional fiber material and two-dimensional boron nitride form heat conduction channels in the raw materials, while three-dimensional silicon carbide can further strengthen these channels, making the heat conduction network more continuous and three-dimensional. The constructed multi-scale heat channels help to conduct heat quickly in the matrix, thereby significantly improving the thermal conductivity.

[0037] 3. The three-dimensional silicon carbide material used in this invention is treated with electromagnetic wave irradiation to achieve uniform non-melting of the material surface, improve its interfacial compatibility with polyether ether ketone, thereby reducing interfacial thermal resistance and improving thermal conductivity.

[0038] 4. The three-dimensional silicon carbide material used in this invention can transfer heat more effectively. Due to the large and interconnected lattice structure of the three-dimensional silicon carbide material, its thermal conductivity is generally better than that of zero-dimensional materials (such as nanoparticles or quantum dots). Moreover, the three-dimensional structure has less surface effect and the arrangement of surface atoms / molecules is more uniform. The three-dimensional silicon carbide material has better chemical stability in high temperature, high pressure and harsh environments.

[0039] 5. The one-dimensional fiber material used in this invention is short-cut fiber. On the one hand, it can directly enhance the mechanical properties of the composite material and provide structural support for the material. On the other hand, its morphological characteristics make it easy to achieve uniform dispersion in the matrix, thereby avoiding fiber agglomeration from the source and ensuring the stability and consistency of the overall performance of the composite material. Among them, carbon fiber is more suitable for weight-sensitive fields such as aerospace and automobile manufacturing. Detailed Implementation

[0040] The following are specific embodiments of the present invention, which further describe the technical solution of the present invention, but the present invention is not limited to these embodiments.

[0041] Unless otherwise specified, the materials used in this invention are commercially available products, and the methods used are conventional technical means.

[0042] The raw materials used in this article include: Polyetheretherketone (PEEK): Purchased from Guocai (Suzhou) New Materials Technology Co., Ltd.; Carbon fiber: purchased from Jiangsu Lihuang Plastics Co., Ltd., 450CA30, with an average length of 1~10mm; Boron nitride: Hexagonal boron nitride sheets with an average thickness of 5 μm purchased from Aladdin.

[0043] This article describes a method for preparing high thermal conductivity polyetheretherketone composite materials, including the following steps: Silicon carbide material with an average particle size of 10~80μm was irradiated in electromagnetic waves of 2~6GHz for 5~20min to obtain electromagnetically irradiated silicon carbide. Weigh the raw materials, including 70-85 parts of polyetheretherketone, 16-25 parts of one-dimensional fiber material, 5-15 parts of boron nitride, and 2-10 parts of silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 320-420℃ for 3-15 minutes; then extrude and mold to obtain a high thermal conductivity polyetheretherketone composite material.

[0044] The testing methods described in this article include: 1. Thermal conductivity test: GB / T 3139-2005 "Test method for thermal conductivity of fiber reinforced plastics"; 2. Thermal diffusivity test: GB / T 36800-2018 "Plastics - Thermomechanical Analysis"; 3. Tensile strength: GB / T 1447-2005 "Test Method for Tensile Properties of Fiber Reinforced Plastics". Example 1 The preparation method of the high thermal conductivity polyetheretherketone composite material in this embodiment includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0045] Weigh the raw materials, including: 80 parts of polyetheretherketone, 20 parts of carbon fiber, 5 parts of hexagonal boron nitride sheets, and 5 parts of silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 380℃ for 8 minutes; then extrude and granulate, and hot press to obtain a high thermal conductivity polyetheretherketone composite material.

[0046] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0047] Example 2 The preparation method of the high thermal conductivity polyetheretherketone composite material in this embodiment includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0048] Weigh the raw materials, including: 80 parts of polyetheretherketone, 20 parts of carbon fiber, 5 parts of hexagonal boron nitride sheets, and 2 parts of silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 380℃ for 8 minutes; then extrude and granulate, and 3D print to obtain a high thermal conductivity polyetheretherketone composite material.

[0049] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0050] Example 3 The preparation method of the high thermal conductivity polyetheretherketone composite material in this embodiment includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0051] Weigh the raw materials, including: 80 parts of polyetheretherketone, 20 parts of carbon fiber, 5 parts of hexagonal boron nitride sheets, and 10 parts of silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 380℃ for 8 minutes; then extrude and granulate, and injection mold to obtain a high thermal conductivity polyetheretherketone composite material.

[0052] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0053] Example 4 The preparation method of the high thermal conductivity polyetheretherketone composite material in this embodiment includes the following steps: Silicon carbide material with an average particle size of 60 μm was irradiated with 5 GHz electromagnetic waves for 12 min to obtain electromagnetically irradiated silicon carbide.

[0054] Weigh the raw materials, including: 80 parts polyetheretherketone, 20 parts carbon fiber, 5 parts hexagonal boron nitride sheets, and 5 parts silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 360℃ for 12 minutes; then extrude and granulate, and hot press to obtain a high thermal conductivity polyetheretherketone composite material.

[0055] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0056] Example 5 The preparation method of the high thermal conductivity polyetheretherketone composite material in this embodiment includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0057] Weigh the raw materials, including: 80 parts polyetheretherketone, 20 parts glass fiber, 5 parts hexagonal boron nitride sheets, and 8 parts silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at 380℃ for 8 minutes; then extrude and granulate, and hot press to obtain a high thermal conductivity polyetheretherketone composite material.

[0058] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0059] Example 6 The preparation method of the high thermal conductivity polyetheretherketone composite material in this embodiment includes the following steps: Silicon carbide material with an average particle size of 10 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0060] Weigh the raw materials, including: 80 parts of polyetheretherketone, 20 parts of carbon fiber, 5 parts of hexagonal boron nitride sheets, and 5 parts of silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 380℃ for 8 minutes; then extrude and granulate, and hot press to obtain a high thermal conductivity polyetheretherketone composite material.

[0061] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0062] Example 7 The preparation method of the high thermal conductivity polyetheretherketone composite material in this embodiment includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0063] Weigh the raw materials, including: 80 parts polyetheretherketone, 20 parts carbon fiber, 15 parts hexagonal boron nitride sheets, and 5 parts silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 380℃ for 8 minutes; then extrude and granulate, and hot press to obtain polyetheretherketone composite material.

[0064] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0065] Comparative Example 1 The preparation method of the polyetheretherketone composite material in this comparative example includes the following steps: Compared with Example 1, the difference is that the silicon carbide is not treated with electromagnetic wave irradiation, and 5 parts of silicon carbide are directly added to the twin-screw extruder along with other raw materials.

[0066] The performance of the prepared polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0067] Comparative Example 2 The preparation method of the polyetheretherketone composite material in this comparative example includes the following steps: The difference from Example 1 is that silicon carbide is not added to the raw materials.

[0068] The performance of the prepared polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0069] Comparative Example 3 The preparation method of the polyetheretherketone composite material in this comparative example includes the following steps: Compared to Example 1, the difference is that carbon fiber is not added to the raw materials.

[0070] The performance of the prepared polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0071] Comparative Example 4 The preparation method of the polyetheretherketone composite material in this comparative example includes the following steps: Compared to Example 1, the difference is that boron nitride is not added to the raw materials.

[0072] The performance of the prepared polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0073] Comparative Example 5 The preparation method of the polyetheretherketone composite material in this comparative example includes the following steps: Compared to Example 1, the difference is that boron nitride and silicon carbide are not added to the raw materials.

[0074] The performance of the prepared polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0075] Comparative Example 6 The preparation method of the polyetheretherketone composite material in this comparative example includes the following steps: The difference compared to Example 1 is that the carbon fiber length is 20 mm.

[0076] The performance of the prepared polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0077] Comparative Example 7 The preparation method of the polyetheretherketone composite material in this comparative example includes the following steps: The difference compared to Example 1 is that the carbon fiber length is 100 μm.

[0078] The performance of the prepared polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0079] Comparative Example 8 The preparation method of the high thermal conductivity polyetheretherketone composite material in this comparative example includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0080] Weigh the raw materials, including: 80 parts polyether ether ketone, 5 parts carbon fiber, 5 parts hexagonal boron nitride sheets, and 5 parts silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 380℃ for 8 minutes; then extrude and granulate, and hot press to obtain a high thermal conductivity polyether ether ketone composite material.

[0081] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0082] Comparative Example 9 The preparation method of the high thermal conductivity polyetheretherketone composite material in this comparative example includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 3 GHz electromagnetic waves for 10 min to obtain electromagnetically irradiated silicon carbide.

[0083] Weigh the raw materials, including: 80 parts polyetheretherketone, 50 parts carbon fiber, 5 parts hexagonal boron nitride sheets, and 5 parts silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at 380℃ for 8 minutes; then extrude and granulate, and hot press to obtain a high thermal conductivity polyetheretherketone composite material.

[0084] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0085] Comparative Example 10 The preparation method of the high thermal conductivity polyetheretherketone composite material in this comparative example includes the following steps: Silicon carbide material with an average particle size of 50 μm was irradiated with 8 GHz electromagnetic waves for 20 min to obtain electromagnetically irradiated silicon carbide.

[0086] Weigh the raw materials, including: 80 parts of polyetheretherketone, 20 parts of carbon fiber, 5 parts of hexagonal boron nitride sheets, and 5 parts of silicon carbide irradiated by electromagnetic waves; mix all the raw materials and place them in a twin-screw extruder for melt blending at a temperature of 380℃ for 8 minutes; then extrude and granulate, and hot press to obtain a high thermal conductivity polyetheretherketone composite material.

[0087] The performance of the polyetheretherketone composite material was tested, and the results are shown in Table 1.

[0088] Table 1. Performance Data of Polyetheretherketone Composite Materials As shown in the table above, the high thermal conductivity polyether ether ketone composite material of Example 1 of the present invention has good thermal conductivity and mechanical properties. In Examples 2 and 3, the amount of silicon carbide was adjusted to 2 parts and 10 parts, respectively. When the amount of silicon carbide is too small, its effect on the "three-dimensional" thermal conductivity pathway is limited; when the amount is too large, it may damage the thermal conductivity network constructed by the fiber and boron nitride, and simultaneously introduce interfacial thermal resistance. Therefore, the thermal conductivity of both examples is slightly lower than that of Example 1. Example 4 changed the silicon carbide particle size and irradiation and blending conditions, yet still maintained high thermal conductivity and mechanical properties, indicating that the process window of the present invention has a certain tolerance. In Example 5, carbon fiber was replaced with glass fiber. Glass fiber itself has lower thermal conductivity than carbon fiber, and there are differences in the interfacial bonding performance with the matrix, resulting in overall thermal conductivity and mechanical properties that are inferior to the carbon fiber reinforced system. In Example 6, silicon carbide with a smaller particle size (10 μm) was used. Small-particle-size fillers have a large specific surface area, are prone to agglomeration, increase interfacial thermal resistance, and decrease the continuity of the thermal conductivity pathway, thus the performance is slightly lower than that of Example 1. In Example 7, the amount of boron nitride was increased to 15 parts. Excessive two-dimensional filler is prone to stacking and orientation disorder, which hinders the construction of a three-dimensional thermally conductive network between the fiber and silicon carbide. It may also cause agglomeration, reduce mechanical properties, and the thermal conductivity is lower than that in Example 1.

[0089] In Comparative Examples 1-5, the absence of one or more components from silicon carbide, carbon fiber, and boron nitride respectively prevented the effective construction of a multidimensional thermally conductive network, weakening interfacial synergy and resulting in a significant decrease in both the thermal conductivity and mechanical properties of the composite material. In Comparative Example 6, the carbon fiber length was relatively long (20 mm), making orientation in the matrix difficult to control, limiting the deformability of the polymer matrix, easily leading to localized stress concentration under stress, material brittleness, and significant anisotropy. Furthermore, the excessively long local thermal conduction pathways resulted in uneven heat transfer. In Comparative Example 7, the carbon fiber length was too short (100 μm), making it difficult to effectively transfer stress. It primarily served as a filler and stiffener, with limited improvement in tensile and flexural strength. Simultaneously, short fibers were difficult to interlock to form continuous thermal conduction pathways and were prone to agglomeration, forming internal crack initiation points and further degrading material properties. Compared to Example 1, in Comparative Example 8, the carbon fiber content was reduced to 5 parts, resulting in an excessively low proportion of one-dimensional reinforcement, making it difficult to form continuous thermal conduction channels and an effective mechanical support network. Therefore, both thermal conductivity and tensile strength decreased significantly. In Comparative Example 9, the amount of carbon fiber was increased to 50 parts. Although this enhanced the mechanical properties, the excessive fiber content led to insufficient matrix wetting, increased interfacial defects, and some fiber agglomeration, which interfered with the continuity of the heat conduction path, resulting in a lower thermal conductivity than in Example 1. In Examples 4 and 5, the amount of silicon carbide was adjusted to 2 parts and 10 parts, respectively. In Comparative Example 10, the silicon carbide irradiation frequency was increased to 8 GHz and the time was extended to 20 minutes. Excessive electromagnetic irradiation may have caused excessive unmelting of the silicon carbide surface or even generated defects, weakening the effect of improving interfacial compatibility, and the performance was actually worse than under the optimal irradiation conditions.

[0090] In summary, this invention incorporates one-dimensional fiber material, two-dimensional boron nitride, and three-dimensional silicon carbide into a polyetheretherketone (PEEK) matrix. The one-dimensional fiber material and two-dimensional boron nitride form heat conduction channels, while the three-dimensional silicon carbide further strengthens these channels, making the heat conduction network more continuous and three-dimensional. This multi-scale heat channel structure facilitates rapid heat conduction within the matrix, thereby significantly improving thermal conductivity. Furthermore, the three-dimensional silicon carbide material used in this invention undergoes electromagnetic wave irradiation treatment to achieve uniform non-melting of the material surface, improving its interfacial compatibility with PEEK and thus reducing interfacial thermal resistance, further enhancing thermal conductivity.

[0091] All aspects, embodiments, and features of this invention should be considered illustrative in all respects and not limiting of the invention; the scope of the invention is defined only by the claims. Other embodiments, modifications, and uses will become apparent to those skilled in the art without departing from the spirit and scope of the invention as claimed.

[0092] In the preparation method of this invention, the order of the steps is not limited to the listed order. For those skilled in the art, variations in the order of the steps without creative effort are also within the scope of protection of this invention. Furthermore, two or more steps or actions can be performed simultaneously.

[0093] Finally, it should be noted that the specific embodiments described herein are merely illustrative examples of the invention and are not intended to limit the implementation of the invention. Those skilled in the art can make various modifications or additions to the described specific embodiments or use similar methods to replace them; it is neither necessary nor possible to exemplify all embodiments here. However, these obvious variations or modifications derived from the essential spirit of the invention still fall within the scope of protection of the invention, and interpreting them as any additional limitation would contradict the spirit of the invention.

Claims

1. A high thermal conductivity polyetheretherketone composite material, characterized in that, By weight, its raw materials include: 50-85 parts polyetheretherketone, 10-30 parts one-dimensional fiber material, 1-15 parts boron nitride, and 0.1-20 parts silicon carbide irradiated by electromagnetic waves. The one-dimensional fiber material is short-cut fiber with a length of 1~15mm; The electromagnetically irradiated silicon carbide is obtained by irradiating silicon carbide with an average particle size of 10-80 μm in electromagnetic waves of 2-6 GHz for 5-20 minutes.

2. The high thermal conductivity polyetheretherketone composite material according to claim 1, characterized in that, The raw materials for the high thermal conductivity polyether ether ketone composite material include: 70-85 parts polyether ether ketone, 16-25 parts one-dimensional fiber material, 5-15 parts boron nitride, and 2-10 parts silicon carbide irradiated by electromagnetic waves.

3. The high thermal conductivity polyetheretherketone composite material according to claim 1, characterized in that, The silicon carbide is pretreated before irradiation, and the pretreatment includes at least one of ultrasonic cleaning, acid washing, alkali washing, and alcohol washing.

4. The high thermal conductivity polyetheretherketone composite material according to claim 1, characterized in that, The one-dimensional fiber material includes one or more of carbon fiber, glass fiber, aramid fiber, quartz fiber, polyethylene fiber, and PBO fiber.

5. The high thermal conductivity polyetheretherketone composite material according to claim 1, characterized in that, The one-dimensional fiber material is carbon fiber, and the length of the carbon fiber is 1~10mm.

6. The high thermal conductivity polyetheretherketone composite material according to claim 1, characterized in that, The high thermal conductivity polyetheretherketone composite material has a thermal conductivity ≥0.5 W / (m·K) and a tensile strength ≥200MPa.

7. A method for preparing the high thermal conductivity polyetheretherketone composite material as described in claim 1, characterized in that, The preparation method includes the following steps: The raw materials are mixed, melt-blended, and then shaped to obtain the final product. And / or, dissolve polyetheretherketone in a solvent, then add the remaining raw materials other than polyetheretherketone and mix well to obtain a mixture, then place it in a twin-screw extruder for melt blending, extrusion and molding to obtain the final product.

8. The method for preparing the high thermal conductivity polyetheretherketone composite material according to claim 7, characterized in that, The melt blending temperature is 320~420℃, and the time is 3~15min; And / or, the molding process includes one or more of thermoforming, injection molding, and 3D printing.

9. The application of a high thermal conductivity polyetheretherketone composite material as described in any one of claims 1 to 6 in the fields of aerospace, automotive industry, electronic semiconductors, and medical devices.

10. A spacecraft thermal protection device, characterized in that, Its raw materials include 0.01 to 100 wt% of the high thermal conductivity polyether ether ketone composite material as described in any one of claims 1 to 6.

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