A laser driving abnormality protection method and device

Abstract

The application provides a laser driving abnormality protection method and device, relates to the technical field of safety protection of laser radars, is applied to a laser driving protection system, and the system comprises a laser driving main loop and a control feedback loop; the control feedback loop is provided with a MOS tube and an operational amplifier; the operational amplifier is connected with the laser driving main loop through a sampling resistor; the MOS tube is electrically connected with the operational amplifier; the method is that loop voltage of the laser driving main loop is monitored in real time, abnormal conditions are determined according to different voltage states, and the MOS tube and the operational amplifier are controlled and regulated according to corresponding preset strategies to execute protection, the technical problems that a traditional single current type protection circuit cannot timely cope with overvoltage, driving main loop short circuit and uncontrolled load recovery current are solved, and the technical effects of improving the abnormality protection capability of the laser and reducing the risk of device damage are achieved.

Description

Technical Field

[0001] This invention relates to the field of lidar safety protection technology, and in particular to a method and device for protecting against laser-driven anomalies. Background Technology

[0002] With the rapid development of optical communication technology, autonomous driving, and industrial automation, lasers, as core sensing and measurement components, are widely used in lidar for autonomous vehicles, obstacle avoidance systems for drones, and high-precision industrial measurement equipment. Their operational stability directly determines the overall system's safety and measurement accuracy. Lasers require extremely high stability in their driving voltage and current. Overvoltage, overcurrent, and short circuits can easily lead to laser chip burnout and optical power attenuation. Therefore, anomaly protection technology for laser drive systems has become a core focus of industry research and development, with continuously increasing demands for protection response speed, control precision, and fault recovery capabilities.

[0003] Most existing laser drive systems rely solely on a single laser drive main circuit for power transmission and basic drive. To address simple overvoltage and overcurrent issues, some systems only connect basic monitoring components such as sampling resistors in series in the main circuit, providing coarse early warning by collecting limited electrical parameters, without configuring a dedicated control feedback architecture with active adjustment capabilities. In practical applications, the laser drive main circuit not only faces sudden anomalies such as overvoltage, overcurrent, and short circuits, but also experiences irregular fluctuations in circuit voltage and current during the load recovery phase after a short circuit fault is cleared. If only the hardware characteristics of the main circuit itself are used for passive adjustment, it is impossible to achieve precise control of electrical parameters. Therefore, current runaway protection during the fault recovery phase is as important as protection against sudden anomalies, and a complete full-scenario protection closed loop needs to be formed.

[0004] However, existing laser drive protection methods often lack independent and efficient control feedback mechanisms, resulting in passive interception of sudden anomalies. They struggle to ensure smooth recovery after short-circuit faults are cleared, and commonly suffer from uncontrollable current change rates during the recovery phase. Specifically, during the voltage recovery process after fault clearance, the lack of targeted resistor control logic to guide current trends leads to sudden increases in drive current. Even if this doesn't exceed normal operating thresholds, the instantaneous current surge can cause damage to internal laser components, shorten device lifespan, and even trigger latent faults. This fails to meet the stringent requirements for long-term stable laser operation in scenarios such as autonomous driving and high-precision industrial measurement. Therefore, there is an urgent need for a laser drive anomaly protection method that incorporates a dedicated control feedback architecture to address the device damage caused by sudden current surges during the recovery phase in existing technologies. Summary of the Invention

[0005] To address the aforementioned shortcomings in the existing technology, the present invention aims to provide a laser drive anomaly protection method that improves the anomaly protection capability of the laser and reduces the risk of device damage.

[0006] The above-mentioned objective of this invention is achieved through the following technical solution: A laser drive anomaly protection method is applied to a laser drive protection system. The laser drive protection system includes a laser drive main circuit and a control feedback circuit. The laser drive main circuit is connected to the control feedback circuit. The control feedback circuit includes a MOSFET and an operational amplifier. The operational amplifier is connected to the laser drive main circuit through a sampling resistor, and the MOSFET is electrically connected to the operational amplifier. The method includes: Real-time monitoring of the loop voltage of the laser drive main circuit; When the circuit voltage is greater than the preset target protection voltage, the laser drive main circuit is determined to be in an overvoltage and overcurrent abnormal state, and the MOS transistor and the operational amplifier are controlled to perform overvoltage and overcurrent protection according to the preset overvoltage and overcurrent abnormal circuit control strategy. When the circuit voltage is greater than or equal to the preset short-circuit protection voltage, the laser drive main circuit is determined to be in a short-circuit fault state, and the MOS transistor and the operational amplifier are controlled to perform short-circuit protection according to the preset short-circuit fault circuit control strategy. When the circuit voltage rises from the preset safe voltage threshold to the preset recovery start threshold, it is determined that the laser drive main circuit is in a short-circuit fault clearance state, and the MOS transistor and the operational amplifier are controlled according to the preset step-by-step recovery circuit control strategy to perform recovery current runaway protection.

[0007] By adopting the above technical solution, a dual-loop collaborative architecture is constructed, consisting of a laser drive main loop and a control feedback loop containing MOSFETs and operational amplifiers. Signal coupling between the main loop and feedback loop is achieved using sampling resistors. With loop voltage as the core monitoring indicator, and combined with differentiated protection strategies for multiple scenarios, this approach effectively overcomes the limitations of traditional single-loop passive protection. It solves the technical pain points of traditional methods, such as delayed response to overvoltage and short-circuit faults, sudden current surges during recovery, and insufficient protection accuracy. The operational amplifier can quickly and accurately distinguish between overvoltage / overcurrent anomalies and short-circuit faults. Active protection is achieved by adjusting the on-resistance of the MOSFETs. Dynamic voltage control prevents device impact during overvoltage / overcurrent events, and rapidly reduces the voltage to a safe threshold during short circuits, shortening the fault impact time. After fault clearance, a tiered recovery strategy guides a smooth voltage recovery, eliminating hidden losses caused by sudden current surges during recovery. Furthermore, it eliminates the need for complex components, simplifying the system structure and reducing control costs. It can also adapt to different lasers and application scenarios by adjusting preset thresholds, balancing versatility and reliability, comprehensively ensuring the long-term stable operation of the laser and drive system, and improving the operational safety of terminal equipment.

[0008] Preferred options also include: When the circuit voltage is between the lower limit of the preset target protection voltage and the preset target protection voltage, it is determined that the laser drive main circuit is in normal working condition, and the MOS transistor and the operational amplifier are controlled according to the preset standard circuit control strategy to perform steady-state pre-control.

[0009] By adopting the above technical solution, a dual collaborative architecture of the laser drive main circuit and the control feedback circuit containing MOSFETs and operational amplifiers is used. Combined with sampling resistors, signal coupling and differentiated protection for multiple scenarios are achieved. This not only solves the pain points of traditional single main circuit passive protection in terms of lag response to overvoltage and short circuits and sudden current surges during the recovery phase, but also covers closed-loop protection throughout the entire workflow through the newly added steady-state pre-control of normal working state. The operational amplifier can accurately determine each state, dynamically control voltage during overvoltage and overcurrent, rapidly reduce voltage during short circuits, and achieve step-by-step smooth recovery after fault elimination. During normal operation, it maintains the stability of MOSFET on-resistance based on preset standard strategies, corrects minor voltage fluctuations in real time, and avoids drift-induced anomalies. There is no need to add complex components, simplifying the structure, reducing control costs, and enhancing adaptability, thus comprehensively improving the operational stability and reliability of the laser drive system.

[0010] Preferably, the preset standard loop control strategy is as follows: Based on the preset first amplitude control voltage in the operational amplifier, the on-resistance of the MOS transistor is controlled to remain greater than or equal to the first preset on-resistance threshold, thereby driving the circuit voltage to be within the preset normal operating voltage range.

[0011] By adopting the above technical solution, relying on the dual collaborative architecture of the laser drive main circuit and the control feedback circuit, combined with sampling resistor signal coupling and multi-scenario protection strategies, not only are the pain points of traditional passive protection such as lag in response to overvoltage and short circuit and sudden current surge during the recovery stage solved, but also, through a clear preset standard circuit control strategy, the first amplitude control voltage in the operational amplifier is used to precisely regulate the MOS transistor, so that its on-resistance is kept greater than or equal to the first preset on-resistance threshold. This can stably lock the circuit voltage within the preset normal operating range, correct small voltage fluctuations in real time, avoid drift-induced abnormalities, and form a closed-loop protection throughout the entire process. There is no need to add complex components, simplifying the structure, reducing control costs, and increasing adaptability, which significantly improves the stability and reliability of the laser drive system.

[0012] Preferably, the preset overvoltage and overcurrent abnormality loop control strategy is as follows: Calculate the first voltage difference between the circuit voltage and the preset target protection voltage; Based on the first voltage difference, the preset overvoltage and overcurrent amplitude control voltage in the operational amplifier is adjusted to obtain the second amplitude control voltage; Based on the second amplitude control voltage, the on-resistance of the MOS transistor is controlled to remain less than or equal to the second preset on-resistance threshold, thereby driving the circuit voltage to remain less than the preset overcurrent protection voltage.

[0013] By adopting the above technical solution, relying on the dual-loop collaborative architecture and sampling resistor signal coupling, and through a clear preset overvoltage and overcurrent abnormal loop control strategy, the operational amplifier control voltage is dynamically adjusted based on the voltage difference to generate a second amplitude control voltage. The on-resistance of the MOS transistor is precisely controlled to not exceed the second preset threshold. This allows for targeted adaptation to the degree of overvoltage to achieve graded voltage control, quickly stabilizing the loop voltage below the preset overcurrent protection voltage, avoiding the conversion of overvoltage to overcurrent and the impact of sudden voltage changes on devices. This solves the problems of insufficient accuracy and lag response of traditional protection. Combined with full-scenario protection logic to form a closed loop, the structure is simplified and highly adaptable, significantly improving the protection reliability and operational stability of the laser drive system.

[0014] Preferably, the preset short-circuit fault loop control strategy specifically includes: According to the preset third amplitude control voltage in the operational amplifier, the on-resistance of the MOS transistor is controlled to remain less than or equal to the third preset on-resistance threshold during the first preset time period, thereby driving the circuit voltage to decrease to the preset safe voltage threshold.

[0015] By adopting the above technical solution and relying on the dual-loop collaborative architecture, through a clear preset short-circuit fault loop control strategy, the operational amplifier precisely controls the MOSFET with a third amplitude control voltage, ensuring that its on-resistance does not exceed the third preset threshold within the first preset time period. This can quickly reduce the loop voltage to the preset safety threshold, significantly shorten the impact time of the high current during short circuits, avoid device burnout, and solve the problems of delayed response and crude methods in traditional short-circuit protection. Combined with full-scenario protection to form a closed loop, the structure is simplified and highly adaptable, improving the timeliness and reliability of short-circuit protection in laser drive systems.

[0016] Preferably, the preset tiered recovery loop control strategy is as follows: Using the preset third amplitude control voltage as the initial value, the voltage is gradually reduced according to a preset reduction rate to generate a fourth amplitude control voltage; According to the fourth amplitude control voltage, the on-resistance is controlled to increase from the third preset on-resistance threshold to the fourth preset on-resistance threshold within a second preset time period, thereby driving the circuit voltage to rise back to the preset target protection voltage lower limit; When the circuit voltage rises to between the preset target protection voltage lower limit and the preset target protection voltage, the MOS transistor and the operational amplifier are controlled to perform steady-state reset recovery according to the preset steady-state reset circuit control strategy.

[0017] By adopting the above technical solution and relying on the dual-loop collaborative architecture, through a clear preset step-by-step recovery loop control strategy, the fourth amplitude control voltage is gradually reduced from the third amplitude control voltage as the initial value. The on-resistance of the MOS transistor is precisely controlled to increase in steps, and the loop voltage is guided to rise steadily to the preset range before switching to steady-state reset. This completely eliminates the hidden device losses caused by the sudden increase in current during the traditional recovery stage, achieves a smooth transition after a fault, improves closed-loop protection in all scenarios, and significantly enhances the recovery reliability and device lifespan of the laser drive system.

[0018] Preferably, the preset steady-state reset loop control strategy is as follows: The fourth amplitude control voltage is adjusted according to a preset reduction rate until the fourth amplitude control voltage drops to a preset first amplitude control voltage within the operational amplifier; Based on the preset first amplitude control voltage, the on-resistance is controlled to remain greater than or equal to the first preset on-resistance threshold, thereby driving the circuit voltage to be within the preset normal operating voltage range.

[0019] By adopting the above technical solution and relying on the dual-loop collaborative architecture, the fourth amplitude control voltage is gradually reduced to the first amplitude control voltage through the preset steady-state reset loop control strategy. The on-resistance of the MOS transistor is adjusted to maintain above the threshold, and the loop voltage is precisely locked within the normal operating range. This eliminates the risk of voltage fluctuation after recovery, improves the closed-loop protection of the entire process, and further enhances the operational stability and device lifespan of the laser drive system.

[0020] The second objective of this invention is to provide a laser drive anomaly protection device, which has the characteristics of improving the anomaly protection capability of the laser and reducing the risk of device damage.

[0021] The second objective of this invention is achieved through the following technical solution: A laser drive anomaly protection device is applied to a laser drive protection system. The laser drive protection system includes a laser drive main circuit and a control feedback circuit. The laser drive main circuit is connected to the control feedback circuit. The control feedback circuit includes a MOSFET and an operational amplifier. The operational amplifier is connected to the laser drive main circuit through a sampling resistor, and the MOSFET is electrically connected to the operational amplifier. The device includes: A monitoring module is used to monitor the loop voltage of the laser drive main circuit in real time; The overvoltage and overcurrent protection module is used to determine that the laser drive main circuit is in an overvoltage and overcurrent abnormal state when the circuit voltage is greater than the preset target protection voltage, and to regulate the MOS transistor and the operational amplifier to perform overvoltage and overcurrent protection according to the preset overvoltage and overcurrent abnormal circuit control strategy. A short-circuit protection module is used to determine that the laser drive main circuit is in a short-circuit fault state when the circuit voltage is greater than or equal to a preset short-circuit protection voltage, and to regulate the MOS transistor and the operational amplifier to perform short-circuit protection according to a preset short-circuit fault circuit control strategy. The recovery current runaway protection module is used to determine that the laser drive main circuit is in a short circuit fault clearance state when the circuit voltage rises from the preset safe voltage threshold to the preset recovery start threshold, and to regulate the MOS transistor and the operational amplifier to perform recovery current runaway protection according to the preset step-by-step recovery circuit control strategy.

[0022] By adopting the above technical solution, and by setting up four functional modules for monitoring, overvoltage and overcurrent protection, short circuit protection, and recovery current runaway protection, and relying on the dual-loop collaborative architecture to achieve precise linkage of each module, different abnormal states can be quickly identified and differentiated protection strategies can be executed. This solves the pain points of traditional protection's delayed response and sudden current surge during the recovery phase, forming a closed-loop protection throughout the entire process. It simplifies the device structure and has strong adaptability, significantly improving the operational stability of the laser drive system and the service life of the devices.

[0023] The third objective of this invention is to provide an electronic device that improves the protection capability of lasers against abnormalities and reduces the risk of device damage.

[0024] The above-mentioned objective three of this invention is achieved through the following technical solution: An electronic device includes a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and execute the laser-driven anomaly protection method described in any of the preceding claims.

[0025] The fourth objective of this invention is to provide a computer-readable storage medium capable of storing corresponding programs, which facilitates the improvement of the laser's abnormal protection capabilities and reduces the risk of device damage.

[0026] The fourth objective of this invention is achieved through the following technical solution: A computer-readable storage medium storing a computer program that can be loaded by a processor and execute the laser-driven anomaly protection method described in any of the preceding claims.

[0027] In summary, the present invention has at least one of the following beneficial technical effects: This invention provides a laser drive anomaly protection method and device, applied to an improved laser drive protection system. The system constructs a collaborative architecture of a laser drive main circuit and a control feedback circuit. The control feedback circuit consists of a MOSFET and an operational amplifier. The operational amplifier is connected to the laser drive main circuit via a sampling resistor, and the MOSFET and operational amplifier are electrically connected to form a control link. By monitoring the circuit voltage of the laser drive main circuit in real time, differentiated protection strategies are implemented for different operating states: when the circuit voltage is greater than a preset target protection voltage, it is determined to be an overvoltage / overcurrent anomaly, and the MOSFET and operational amplifier are controlled according to a preset strategy to perform overvoltage / overcurrent protection; when the circuit voltage is greater than or equal to a preset short-circuit protection voltage, it is determined to be a short-circuit fault state, and short-circuit protection is implemented through a corresponding strategy; when the circuit voltage recovers from a preset safe voltage threshold to a preset recovery start threshold, it is determined to be a short-circuit fault clearing state, and the two components are controlled according to a preset tiered recovery strategy to perform recovery current runaway protection, forming a full-scenario closed-loop protection logic. This solves the technical problem that traditional single-current protection circuits cannot respond promptly to overvoltage, short circuits in the drive main circuit, and load recovery current runaway. Traditional single-current protection circuits rely solely on current parameter monitoring for passive protection, lacking an active control feedback architecture. They are slow to identify overvoltage anomalies, making it difficult to intercept overcurrent risks caused by overvoltage in advance. Furthermore, they often use a one-size-fits-all power-off protection method for short-circuit faults, which cannot achieve a stable voltage drop. During the load recovery phase, the lack of precise control logic leads to a sudden increase in current, causing impact damage to the laser. This invention overcomes the limitations of traditional single current monitoring by independently setting up a control feedback loop containing a MOSFET and an operational amplifier. Using loop voltage as the core monitoring indicator, combined with preset thresholds, it achieves rapid and accurate judgment of abnormal states. The operational amplifier can generate adaptive control signals based on voltage changes, and actively intervenes in the parameters of the main drive loop by adjusting the on-resistance of the MOSFET. For overvoltage and overcurrent anomalies, it can dynamically adjust the control intensity based on the voltage difference, promptly controlling the loop voltage within a safe range and preventing overvoltage from turning into overcurrent. For short-circuit faults, it can quickly drive the loop voltage down to a preset safe voltage threshold, reducing the impact time of large short-circuit currents. For load recovery scenarios, the step-by-step recovery strategy can gradually adjust the control voltage and MOSFET on-resistance, guiding the loop voltage and current to recover smoothly, strictly controlling the rate of current change, and completely avoiding the problem of sudden current surges during the recovery phase. Meanwhile, the dual-loop collaborative architecture realizes a closed-loop process for voltage monitoring, abnormal control, and fault recovery. Compared with the traditional single current-type protection circuit, the protection response is faster and the control accuracy is higher. It can effectively avoid the direct burnout of the laser chip by overvoltage and short circuit, and reduce the hidden losses caused by the instantaneous impact during the load recovery stage. It significantly extends the life of the laser, ensures the stability of its optical power output, and is fully compatible with the stringent requirements of autonomous driving lidar, industrial high-precision measurement equipment, etc. for the long-term stable operation of lasers, thereby improving the operational safety and measurement accuracy of the entire system. Attached Figure Description

[0028] Figure 1 This is a schematic flowchart of a laser-driven anomaly protection method provided in an embodiment of the present invention.

[0029] Figure 2 This is a schematic diagram of a laser driver protection system provided in an embodiment of the present invention.

[0030] Figure 3 This is a structural block diagram of a laser-driven anomaly protection device provided in an embodiment of the present invention. Detailed Implementation

[0031] This invention provides a laser drive anomaly protection method and apparatus to solve the technical problems that traditional single-current protection circuits cannot respond promptly to overvoltage, short circuits in the drive main circuit, and uncontrolled load recovery current. It effectively improves the laser's anomaly protection capability and reduces the risk of device damage.

[0032] To make the objectives, features, and advantages of this invention more apparent and understandable, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0033] It should be noted that, in the embodiments of this invention, when the relevant object information and other related data are used in specific products or technologies, permission or consent from the object is required, and the collection, use, and processing of the relevant data must comply with the relevant laws, regulations, and standards of the relevant countries and regions. In other words, if the embodiments of this invention involve data related to an object, it must be obtained with the object's authorization and consent, the authorization and consent of relevant departments, and in accordance with the relevant laws, regulations, and standards of the country and region. If personal information is involved in the embodiments, the acquisition of all personal information requires the individual's consent; if sensitive information is involved, the separate consent of the information subject is required. The embodiments also need to be implemented with the object's authorization and consent.

[0034] It should be noted that the terms "first," "second," etc., used in this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this disclosure described herein can be implemented in orders other than those illustrated or described herein. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this disclosure.

[0035] Furthermore, the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article, unless otherwise specified, generally indicates that the preceding and following related objects have an "or" relationship.

[0036] Please see Figure 1 The present invention provides a laser drive anomaly protection method, which is applied to a laser drive protection system. The laser drive protection system includes a laser drive main circuit and a control feedback circuit. The laser drive main circuit is connected to the control feedback circuit. The control feedback circuit includes a MOSFET and an operational amplifier. The operational amplifier is connected to the laser drive main circuit through a sampling resistor, and the MOSFET is electrically connected to the operational amplifier.

[0037] Please see Figure 2 The laser drive protection system adopts a collaborative architecture of laser drive main circuit and control feedback circuit. The laser drive main circuit includes a drive controller, a filter circuit, a laser, and a sampling resistor. The output terminal of the drive controller is electrically connected to the input terminal of the filter circuit, the output terminal of the filter circuit is electrically connected to the positive terminal of the laser, the negative terminal of the laser is electrically connected to one end of the sampling resistor, and the other end of the sampling resistor is electrically connected to the negative terminal of the drive controller, forming a complete laser drive main circuit. The filter circuit is used to filter out noise interference in the drive signal and ensure the stability of the drive current. Signal lines are led out from both ends of the sampling resistor and connected to the signal input terminals (non-inverting input and inverting input) of the operational amplifier. The electrical connection is used to transmit the real-time output voltage signal in the main circuit to the operational amplifier for detection; the control feedback loop includes a MOSFET and an operational amplifier. The output terminal of the operational amplifier is electrically connected to the gate (G) of the MOSFET, the source (S) of the MOSFET is electrically connected to the control terminal of the drive controller, and the drain (D) of the MOSFET is grounded, forming a closed-loop control link of signal acquisition-judgment-control-feedback. The operational amplifier is a general-purpose LM324, the MOSFET is an N-channel enhancement-type IRF540, the sampling resistor is an alloy resistor with 1% accuracy and 1Ω resistance, and the drive controller is a programmable laser driver chip MAX3658.

[0038] The drive controller, as the core drive unit of the system, outputs a drive voltage signal with a preset amplitude to provide stable operating power for the laser. Simultaneously, it receives control signals from the control feedback loop and dynamically adjusts its own output parameters to achieve precise control of the voltage and current of the laser drive main circuit. This is the foundation for overvoltage and overcurrent protection, short-circuit protection, and load recovery regulation. The filter circuit removes high-frequency noise and voltage ripple from the drive controller's output signal, ensuring the stability of the laser drive main circuit's output voltage and preventing voltage fluctuations from interfering with the laser's optical power output, thus maintaining the laser's normal operating state. The laser emits laser light under the stable current provided by the laser drive main circuit and is the system's functional execution unit. Its operational stability directly determines the performance of the entire sensing / measurement system and is also the core protection target of this protection system. The sampling resistor collects the current signal of the laser drive main circuit in real time and converts it into a voltage signal, providing raw monitoring data for the control feedback loop. Simultaneously, it... The resistive characteristics participate in the voltage division of the main circuit current, assisting in the signal acquisition for overcurrent warning; the operational amplifier, as the signal processing core of the control feedback loop, receives the voltage signal transmitted by the sampling resistor, compares it with the built-in target protection voltage and target protection current threshold in real time, and generates a control voltage of corresponding amplitude; for overvoltage and overcurrent anomalies, short circuit faults, and load recovery scenarios, it outputs differentiated control signals to drive the MOSFET to operate, and is the decision unit for realizing the full-scenario protection logic; the MOSFET, as the execution component of the control feedback loop, receives the control voltage from the operational amplifier through its gate, dynamically adjusts its own on-resistance, and then changes the potential at the control terminal of the drive controller, indirectly regulating the voltage and current of the laser drive main circuit; it reduces the on-resistance to limit the voltage during overvoltage and overcurrent anomalies, rapidly reduces the on-resistance to reduce the circuit voltage during short circuit faults, and gradually increases the on-resistance to smoothly restore the current during load recovery, and is the core execution component for realizing anomaly protection and smooth recovery.

[0039] The methods include: Step 101: Monitor the loop voltage of the laser drive main circuit in real time.

[0040] In this embodiment of the invention, addressing the technical pain points of existing laser-driven protection methods—namely, the difficulty in simultaneously addressing sudden anomaly protection and stable fault recovery control, and the common problem of uncontrollable current change rate during the recovery phase—this step constructs a full-scenario protection closed loop from the source of precise monitoring. The laser-driven main circuit refers to the power transmission and driving link consisting of a drive controller, filter circuit, laser, and sampling resistor connected sequentially. Its core function is to provide stable operating voltage and current for the laser, serving as the energy basis for the laser's photoelectric conversion. The circuit voltage is defined as the positive operating voltage across the laser in the laser-driven main circuit, a core electrical parameter reflecting the laser's operating state. Its fluctuations directly relate to the stability of the laser's optical power output and the device's lifespan. To achieve real-time monitoring, this embodiment uses an independently configured control feedback loop for signal acquisition. This control feedback loop is an active control link consisting of an operational amplifier and a MOSFET, independent of the main laser drive circuit. It is responsible for acquiring the main circuit's electrical parameters and outputting control signals. The operational amplifier is a differential amplifier with high gain and a 1μs response time. Its non-inverting and inverting inputs are connected to the two ends of a sampling resistor via differential signal lines. The sampling resistor is a precision resistor connected in series with the negative ground path of the main laser drive circuit. In this embodiment, a resistance of 0.5Ω is selected, which linearly converts the main circuit current signal into a voltage signal. The operational amplifier acquires the voltage difference across the sampling resistor, combined with the drive control... The real-time loop voltage of the laser drive main circuit is derived by reverse derivation of the output characteristics of the device. The response time of the entire monitoring process is less than 1μs, meeting the high-speed protection requirements of autonomous driving and industrial high-precision measurement scenarios. During the monitoring process, the 12-bit A / D conversion module built into the operational amplifier converts the acquired analog voltage signal into a digital signal and compares it in real time with the threshold parameters pre-stored in the built-in register. The preset target protection voltage is defined as the maximum allowable voltage threshold when the laser is working normally, which is 5.5V in this embodiment. The preset short-circuit protection voltage is defined as the voltage threshold for determining a short-circuit fault in the laser drive main circuit, which is 6.0V in this embodiment. The preset safe voltage threshold is defined as the voltage threshold required for short-circuit fault protection. The loop voltage is reduced to a safe value, which is 1.5V in this embodiment. The preset recovery start threshold is defined as the voltage threshold for determining short-circuit fault elimination and initiating the recovery process, which is 4.4V in this embodiment. These threshold parameters can be flexibly adjusted through the operational amplifier configuration interface according to the laser model and application scenario. Each time the operational amplifier completes the acquisition and conversion of the loop voltage, it generates a digital frame containing the real-time voltage value, providing accurate raw data for subsequent anomaly judgment. This step, as the starting link of the full-scenario protection closed loop, provides a reliable judgment basis for triggering subsequent protection strategies through high-response voltage monitoring and accurate threshold comparison, effectively solving the problems of monitoring lag and parameter ambiguity in traditional protection methods.

[0041] Step 102: When the circuit voltage is greater than the preset target protection voltage, it is determined that the laser drive main circuit is in an overvoltage and overcurrent abnormal state, and the MOS transistor and operational amplifier are adjusted to perform overvoltage and overcurrent protection according to the preset overvoltage and overcurrent abnormal circuit control strategy.

[0042] Furthermore, the pre-defined overvoltage and overcurrent abnormal loop control strategy is as follows: Calculate the first voltage difference between the circuit voltage and the preset target protection voltage; The second amplitude control voltage is obtained by adjusting the preset overvoltage and overcurrent amplitude control voltage in the operational amplifier based on the first voltage difference. Based on the second amplitude control voltage, the on-resistance of the control MOSFET is kept less than or equal to the second preset on-resistance threshold, and the drive circuit voltage is kept less than the preset overcurrent protection voltage.

[0043] In this embodiment of the invention, after step 101 completes real-time monitoring and outputs a digital frame containing the loop voltage, the operational amplifier compares the real-time voltage value with the preset target protection voltage in the built-in register in real time. The preset target protection voltage is defined as the maximum voltage threshold allowed when the laser is working normally. In this embodiment, the value is 5.5V. Once the loop voltage is detected to exceed the threshold, it is immediately determined that the laser drive main circuit is in an overvoltage and overcurrent abnormal state. This state refers to the critical working state in which the current overload caused by the excessively high loop voltage will soon damage the laser chip. At this time, the preset overvoltage and overcurrent abnormal loop control strategy is triggered. The preset overvoltage and overcurrent abnormal loop control strategy refers to the closed-loop control logic of the operational amplifier and the MOS transistor working together to actively reduce the loop voltage. Its core is to achieve precise intervention on the main circuit voltage by dynamically adjusting the on-resistance of the MOS transistor. First, the operational amplifier's internal difference calculation module calculates the first voltage difference based on the real-time loop voltage acquired in step 101 and the preset target protection voltage. For example, when the real-time loop voltage is 6.2V, the first voltage difference is 0.7V. This difference directly reflects the severity of the overvoltage and is the core basis for subsequent regulation. Then, the operational amplifier calls its built-in overvoltage and overcurrent amplitude control voltage. This overvoltage and overcurrent amplitude control voltage refers to the initial control voltage reference preset by the operational amplifier for overvoltage and overcurrent scenarios. In this embodiment, the value is 3.2V. The operational amplifier linearly adjusts this reference based on the first voltage difference. For example, according to the ratio of 0.2V reduction in control voltage for every 0.1V overvoltage, the initial reference of 3.2V is adjusted to 1.8V to obtain the second amplitude control voltage. This voltage value is positively correlated with the degree of overvoltage; the more severe the overvoltage, the lower the second amplitude control voltage, thus enhancing the regulation. Next, the operational amplifier outputs the second amplitude control voltage to the gate of the MOSFET. The on-resistance of the MOSFET is controlled to be less than or equal to a second preset on-resistance threshold. In this embodiment, the threshold value is 2Ω. As the execution component of the control feedback loop, the on-resistance of the MOSFET is negatively correlated with the gate voltage. The lower the second amplitude control voltage, the smaller the on-resistance of the MOSFET. This indirectly reduces the output voltage of the laser drive main circuit by changing the potential of the control terminal of the drive controller. Finally, the drive circuit voltage is kept less than the preset overcurrent protection voltage, which is defined as the target limit for overvoltage and overcurrent protection. In this embodiment, the value is 4.0V. Compared with the traditional protection method in the prior art that only relies on passive current interruption, this strategy achieves smooth regulation of the circuit voltage by dynamically adjusting the control voltage and the on-resistance of the MOSFET. This avoids the impact of voltage drop on the laser and accurately controls the voltage within a safe range. It effectively solves the problems of lag in overvoltage response and insufficient regulation accuracy of traditional protection methods, and lays a stable foundation for subsequent short-circuit protection and load recovery regulation.

[0044] Step 103: When the circuit voltage is greater than or equal to the preset short-circuit protection voltage, the laser drive main circuit is determined to be in a short-circuit fault state, and the MOS transistor and operational amplifier are adjusted to perform short-circuit protection according to the preset short-circuit fault circuit control strategy.

[0045] Furthermore, the pre-defined short-circuit fault loop control strategy is as follows: Based on the preset third amplitude control voltage in the operational amplifier, the on-resistance of the control MOSFET is kept less than or equal to the third preset on-resistance threshold during the first preset time period, and the drive circuit voltage is reduced to the preset safe voltage threshold.

[0046] In this embodiment of the invention, after step 101 completes the real-time acquisition and conversion of the loop voltage, if the operational amplifier finds that the loop voltage is greater than or equal to the preset short-circuit protection voltage, it immediately determines that the laser drive main circuit is in a short-circuit fault state. Here, the preset short-circuit protection voltage refers to the critical voltage threshold for determining that the main circuit has a short-circuit fault, and its value is higher than the preset target protection voltage. In this embodiment, the value is 6.0V. The short-circuit fault state refers to a dangerous operating state in which the main circuit experiences a sudden voltage rise and a sharp increase in current due to a load short circuit or line fault. If intervention is not timely in this state, the laser chip will be directly burned out. At this time, the operational amplifier will immediately trigger the preset short-circuit fault loop control. The control strategy, specifically the preset short-circuit fault loop control strategy, refers to a fast voltage drop regulation logic designed for short-circuit faults. It aims to achieve a rapid and safe voltage reduction in the loop by maximizing the conduction capability of the MOSFET. The operational amplifier first retrieves a preset third amplitude control voltage from its built-in register. This third amplitude control voltage is a high-amplitude control reference voltage adapted to short-circuit fault scenarios; in this embodiment, it is set to 3.5V. This voltage value is higher than the control voltage under overvoltage and overcurrent scenarios, driving the MOSFET into a low-resistance conduction state. Subsequently, the operational amplifier continuously outputs the third amplitude control voltage to the gate of the MOSFET, controlling the MOSFET's on-resistance to remain less than or equal to the on-resistance for a first preset time period. Regarding the third preset on-resistance threshold, the first preset time period refers to the maximum allowable response time to complete the short-circuit voltage reduction, which is 20μs in this embodiment. The third preset on-resistance threshold refers to the maximum allowable on-resistance value of the MOSFET during the short-circuit protection phase, which is 1Ω in this embodiment. Since the on-resistance of the MOSFET is negatively correlated with the gate control voltage, a high-amplitude third-amplitude control voltage can quickly reduce the on-resistance of the MOSFET to below 1Ω. This, in turn, through the change in the control terminal potential of the drive controller, forces the voltage of the laser drive main circuit to rapidly decrease to the preset safe voltage threshold within 20μs. The preset safe voltage threshold refers to the safe voltage that the main circuit needs to drop to during the short-circuit protection phase. The voltage value, in this embodiment, is 1.5V. This voltage value is much lower than the normal operating voltage of the laser, which can completely cut off the impact of the large short-circuit current on the laser. Compared with the crude method of directly cutting off power in the traditional protection method in the prior art when short-circuit, this strategy achieves a stable and rapid voltage reduction of the circuit voltage by precisely controlling the on-resistance of the MOSFET and the voltage reduction duration. This avoids the voltage fluctuation impact caused by power-off restart. At the same time, the voltage reduction action is completed within the first preset time period. The response speed is much faster than the traditional protection method. It effectively solves the problems of delayed response and easy secondary damage to devices in the traditional short-circuit protection, and lays a safe voltage foundation for the step-by-step recovery after the short-circuit fault is eliminated.

[0047] Step 104: When the circuit voltage rises from the preset safe voltage threshold to the preset recovery start threshold, it is determined that the laser drive main circuit is in a short circuit fault clearance state, and the MOS transistor and operational amplifier are adjusted to perform recovery current runaway protection according to the preset tiered recovery circuit control strategy.

[0048] Furthermore, the pre-defined tiered recovery loop control strategy is as follows: Using the preset third amplitude control voltage as the initial value, the voltage is gradually reduced according to the preset reduction rate to generate the fourth amplitude control voltage; According to the fourth amplitude control voltage, the control on-resistance increases from the third preset on-resistance threshold to the fourth preset on-resistance threshold within the second preset time period, and the drive circuit voltage rises back to the preset target protection voltage lower limit. When the circuit voltage rises to between the preset target protection voltage lower limit and the preset target protection voltage, the MOSFET and operational amplifier are controlled according to the preset steady-state reset circuit control strategy to perform steady-state reset recovery.

[0049] Furthermore, the preset steady-state reset loop control strategy is as follows: The fourth amplitude control voltage is adjusted according to the preset decreasing rate until the fourth amplitude control voltage drops to the preset first amplitude control voltage in the operational amplifier; Based on the preset first amplitude control voltage, the on-resistance is controlled to remain greater than or equal to the first preset on-resistance threshold, and the drive circuit voltage is within the preset normal operating voltage range.

[0050] In this embodiment of the invention, after step 103 completes short-circuit protection and stabilizes the voltage of the laser drive main circuit at a preset safe voltage threshold, the operational amplifier continuously monitors the circuit voltage change. The preset safe voltage threshold refers to the safe voltage value that the main circuit needs to maintain during the short-circuit protection phase; in this embodiment, it is 1.5V. The preset recovery start threshold refers to the critical voltage value for determining that the short-circuit fault has been eliminated and the recovery process has been initiated; in this embodiment, it is 4.4V. Once the circuit voltage is detected to autonomously rise from 1.5V to 4.4V, it is immediately determined that the laser drive main circuit is in a short-circuit fault elimination state. This state refers to a transitional state where the main circuit short-circuit fault has been eliminated and conditions for resuming normal operation are met. At this time, a preset tiered recovery circuit control strategy is triggered. The pre-defined stepped recovery loop control strategy refers to the stepped voltage recovery regulation logic designed for the fault recovery phase. It aims to avoid sudden current surges by linearly adjusting the control voltage and the MOSFET's on-resistance. The pre-defined reduction rate refers to the linear decrease rate of the control voltage during the stepped recovery phase; in this embodiment, it is set to 0.1V / μs. This rate is a core parameter ensuring smooth current changes. The operational amplifier first retrieves the third amplitude control voltage used in step 103 as its initial value. The third amplitude control voltage refers to the high-amplitude control reference voltage adapted to short-circuit fault scenarios; in this embodiment, it is set to 3.5V. Then, it linearly reduces the voltage at the pre-defined reduction rate of 0.1V / μs to generate a continuously gradually changing fourth amplitude control voltage. Simultaneously... The operational amplifier outputs the fourth amplitude control voltage to the gate of the MOSFET in real time. Since the on-resistance of the MOSFET is negatively correlated with the gate control voltage, the gradual decrease in the control voltage will drive the on-resistance of the MOSFET to increase from the third preset on-resistance threshold to the fourth preset on-resistance threshold within a second preset time period. The second preset time period refers to the regulation time for completing the first stage voltage recovery, which is 50μs in this embodiment. The third preset on-resistance threshold refers to the maximum allowable on-resistance of the MOSFET during the short-circuit protection stage, which is 1Ω in this embodiment. The fourth preset on-resistance threshold refers to the on-resistance value that the MOSFET needs to reach after the first stage recovery is completed, which is 3Ω in this embodiment. During this process, the voltage of the laser driving main circuit will change with the on-resistance. The resistance increases synchronously at a rate of 0.1V / μs until it reaches the preset target protection voltage lower limit. The preset target protection voltage lower limit refers to the lowest critical voltage for normal operation of the laser. In this embodiment, the value is 5.2V. When the circuit voltage rises to the preset target protection voltage range of 5.2V to 5.5V, it immediately switches to the preset steady-state reset circuit control strategy. The preset steady-state reset circuit control strategy refers to the control logic that accurately resets the main circuit parameters to the normal operating state. The operational amplifier continues to adjust the fourth amplitude control voltage at a preset decreasing rate of 0.1V / μs until the voltage drops to the first amplitude control voltage. The first amplitude control voltage refers to the reference control voltage adapted to the normal operating state. In this embodiment, the value is 0.At 3V, the on-resistance of the MOSFET increases to above the first preset on-resistance threshold. This first preset on-resistance threshold refers to the minimum on-resistance the MOSFET needs to maintain under normal operating conditions; in this embodiment, it is set to 5Ω. Ultimately, the voltage driving the laser drive main circuit stabilizes within the preset normal operating voltage range. This preset normal operating voltage range refers to the voltage range within which the laser operates stably for a long period; in this embodiment, it is set to 5.0V ± 0.05V. Throughout the recovery process, the rate of change of the main circuit current is strictly controlled to ≤0.05A / μs. Compared to traditional protection methods that suffer from sudden current surges during the recovery phase due to a lack of step-by-step control, this strategy achieves a smooth transition between voltage and current through step-by-step linear adjustment of the control voltage and on-resistance. This completely avoids the damage to the internal components of the laser caused by instantaneous current surges, effectively solving the technical pain point of uncontrollable current change rate during the recovery phase in existing technologies. This ensures the lifespan of the laser and meets the stringent requirements for long-term stable operation in scenarios such as autonomous driving and high-precision industrial measurement.

[0051] Furthermore, it also includes the following steps: Step 105: When the circuit voltage is between the lower limit of the preset target protection voltage and the preset target protection voltage, it is determined that the laser drive main circuit is in normal working condition, and the MOS transistor and operational amplifier are adjusted to perform steady-state pre-control according to the preset standard circuit control strategy.

[0052] Furthermore, the preset standard loop control strategy is specifically as follows: Based on the preset first amplitude control voltage in the operational amplifier, the on-resistance of the MOSFET is kept greater than or equal to the first preset on-resistance threshold, and the drive circuit voltage is within the preset normal operating voltage range.

[0053] In this embodiment of the invention, step 105 serves as the steady-state maintenance link of the full-scenario protection closed loop. It not only follows the parameter solidification after steady-state reset in step 104, but also covers the scenarios of normal initial startup of the laser drive system and stable operation after various anomalies are eliminated. The operational amplifier continuously monitors the loop voltage of the laser drive main circuit in real time and compares it with the threshold. When the loop voltage is found to be stable in the range of 5.2V to 5.5V, it is immediately determined that the laser drive main circuit is in normal working state. This state means that the main circuit voltage and current meet the working requirements of the laser, there is no abnormal risk, and the optical power output can be guaranteed to be stable. At this time, the preset standard loop control strategy is triggered. The preset standard loop control strategy refers to the steady-state regulation logic adapted to the normal working scenario. The core is to maintain the stability of the MOS transistor's on-resistance by fixing the reference control voltage, thereby achieving long-term stability of the loop voltage and avoiding anomalies caused by small fluctuations. The operational amplifier first retrieves the preset first amplitude control voltage from the built-in register. The first amplitude control voltage is a reference control voltage adapted to the normal operating state. In this embodiment, the value is 0.3V. This voltage value is calibrated and can accurately drive the MOSFET to maintain the appropriate on-resistance. Subsequently, the operational amplifier continuously outputs the first amplitude control voltage to the gate of the MOSFET, controlling the on-resistance of the MOSFET to remain greater than or equal to the first preset on-resistance threshold. The first preset on-resistance threshold is the minimum on-resistance that the MOSFET needs to maintain under normal operating conditions. In this embodiment, the value is 5Ω. Since the on-resistance of the MOSFET is negatively correlated with the gate control voltage, the low amplitude control voltage of 0.3V can stabilize the on-resistance of the MOSFET above 5Ω. By changing the potential of the control terminal of the drive controller, the voltage of the laser drive main circuit is indirectly locked within the preset normal operating voltage range. The preset normal operating voltage range can take into account both the stability of the laser's optical power output and the control of device losses. During steady-state pre-control, the operational amplifier also collects minute fluctuations in the loop voltage in real time through the sampling resistor and performs parameter verification every 1μs. If a slight deviation approaches the upper or lower limit of the preset target protection voltage, the on-resistance of the MOS transistor is immediately corrected by fine-tuning the first amplitude control voltage (fine-tuning amplitude ≤0.01V) to ensure that the loop voltage is always within the preset normal operating voltage range. Compared with the shortcomings of traditional protection methods in the prior art, which lack steady-state pre-control and rely solely on hardware characteristics for passive anti-interference, this strategy achieves real-time correction of minute fluctuations through active regulation, effectively avoiding overvoltage and undervoltage risks caused by voltage drift. At the same time, the fixed reference control voltage regulation method is simple and efficient, reducing system energy consumption and further ensuring the long-term stable operation of the laser in scenarios such as autonomous driving lidar and industrial high-precision measurement equipment. It also improves the closed-loop process from abnormal protection and fault recovery to steady-state maintenance.

[0054] Please see Figure 3This invention provides a laser drive anomaly protection device, applied to a laser drive protection system. The laser drive protection system includes a laser drive main circuit and a control feedback circuit. The laser drive main circuit is connected to the control feedback circuit. The control feedback circuit includes a MOSFET and an operational amplifier. The operational amplifier is connected to the laser drive main circuit through a sampling resistor, and the MOSFET is electrically connected to the operational amplifier. The device includes: Monitoring module 301 is used to monitor the loop voltage of the laser drive main circuit in real time; The overvoltage and overcurrent protection module 302 is used to determine that the laser drive main circuit is in an overvoltage and overcurrent abnormal state when the circuit voltage is greater than the preset target protection voltage, and to regulate the MOS transistor and operational amplifier to perform overvoltage and overcurrent protection according to the preset overvoltage and overcurrent abnormal circuit control strategy. The short-circuit protection module 303 is used to determine that the laser drive main circuit is in a short-circuit fault state when the circuit voltage is greater than or equal to the preset short-circuit protection voltage, and to regulate the MOS transistor and operational amplifier to perform short-circuit protection according to the preset short-circuit fault circuit control strategy. The recovery current runaway protection module 304 is used to determine that the laser drive main circuit is in a short circuit fault clearance state when the circuit voltage rises from the preset safe voltage threshold to the preset recovery start threshold, and to regulate the MOS transistor and operational amplifier to perform recovery current runaway protection according to the preset step-by-step recovery circuit control strategy.

[0055] Since the above is a system corresponding to a laser-driven anomaly protection method, and its implementation principle is the same as that of a laser-driven anomaly protection method, for the sake of convenience and brevity, those skilled in the art can clearly understand that the specific working process of the system and modules described above can be referred to the corresponding process in the aforementioned method embodiments, and will not be repeated here.

[0056] An electronic device according to an embodiment of the present invention includes: a memory and a processor, wherein the memory stores a computer program; when the computer program is executed by the processor, the processor performs a laser drive anomaly protection method as described in any of the above embodiments.

[0057] The memory can be an electronic memory such as flash memory, EEPROM (Electrically Erasable Programmable Read-Only Memory), EPROM, hard disk, or ROM. The memory has storage space for program code used to perform any of the method steps described above. For example, the storage space for program code may include individual program codes for implementing the various steps in the methods described above. This program code can be read from or written to one or more computer program products. These computer program products include program code carriers such as hard disks, compact discs (CDs), memory cards, or floppy disks. The program code may be compressed, for example, in a suitable form. When run by a computing processing device, this code causes the computing processing device to perform the various steps in the methods described above.

[0058] This invention provides a computer-readable storage medium storing a computer program thereon, which, when executed, implements the laser drive anomaly protection method of any of the above embodiments.

[0059] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0060] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0061] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0062] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0063] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0064] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for protecting against laser-driven anomalies, characterized in that, An application is made in a laser driver protection system, the laser driver protection system comprising a laser driver main circuit and a control feedback circuit, the laser driver main circuit being connected to the control feedback circuit, the control feedback circuit comprising a MOSFET and an operational amplifier, the operational amplifier being connected to the laser driver main circuit via a sampling resistor, and the MOSFET being electrically connected to the operational amplifier, the method comprising: Real-time monitoring of the loop voltage of the laser drive main circuit; When the circuit voltage is greater than the preset target protection voltage, the laser drive main circuit is determined to be in an overvoltage and overcurrent abnormal state, and the MOS transistor and the operational amplifier are controlled to perform overvoltage and overcurrent protection according to the preset overvoltage and overcurrent abnormal circuit control strategy. When the circuit voltage is greater than or equal to the preset short-circuit protection voltage, the laser drive main circuit is determined to be in a short-circuit fault state, and the MOS transistor and the operational amplifier are controlled to perform short-circuit protection according to the preset short-circuit fault circuit control strategy. When the circuit voltage rises from the preset safe voltage threshold to the preset recovery start threshold, it is determined that the laser drive main circuit is in a short-circuit fault clearance state, and the MOS transistor and the operational amplifier are controlled according to the preset step-by-step recovery circuit control strategy to perform recovery current runaway protection.

2. The laser-driven anomaly protection method according to claim 1, characterized in that, Also includes: When the circuit voltage is between the lower limit of the preset target protection voltage and the preset target protection voltage, it is determined that the laser drive main circuit is in normal working condition, and the MOS transistor and the operational amplifier are controlled according to the preset standard circuit control strategy to perform steady-state pre-control.

3. The laser-driven anomaly protection method according to claim 2, characterized in that, The preset standard loop control strategy is specifically as follows: Based on the preset first amplitude control voltage in the operational amplifier, the on-resistance of the MOS transistor is controlled to remain greater than or equal to the first preset on-resistance threshold, thereby driving the circuit voltage to be within the preset normal operating voltage range.

4. The laser-driven anomaly protection method according to claim 1, characterized in that, The preset overvoltage and overcurrent abnormal loop control strategy is as follows: Calculate the first voltage difference between the circuit voltage and the preset target protection voltage; Based on the first voltage difference, the preset overvoltage and overcurrent amplitude control voltage in the operational amplifier is adjusted to obtain the second amplitude control voltage; Based on the second amplitude control voltage, the on-resistance of the MOS transistor is controlled to remain less than or equal to the second preset on-resistance threshold, thereby driving the circuit voltage to remain less than the preset overcurrent protection voltage.

5. The laser-driven anomaly protection method according to any one of claims 1-4, characterized in that, The preset short-circuit fault loop control strategy is specifically as follows: According to the preset third amplitude control voltage in the operational amplifier, the on-resistance of the MOS transistor is controlled to remain less than or equal to the third preset on-resistance threshold during the first preset time period, thereby driving the circuit voltage to decrease to the preset safe voltage threshold.

6. The laser drive anomaly protection method according to claim 5, characterized in that, The preset tiered recovery loop control strategy is specifically as follows: Using the preset third amplitude control voltage as the initial value, the voltage is gradually reduced according to a preset reduction rate to generate a fourth amplitude control voltage; According to the fourth amplitude control voltage, the on-resistance is controlled to increase from the third preset on-resistance threshold to the fourth preset on-resistance threshold within a second preset time period, thereby driving the circuit voltage to rise back to the preset target protection voltage lower limit; When the circuit voltage rises to between the preset target protection voltage lower limit and the preset target protection voltage, the MOS transistor and the operational amplifier are controlled to perform steady-state reset recovery according to the preset steady-state reset circuit control strategy.

7. The laser-driven anomaly protection method according to claim 6, characterized in that, The preset steady-state reset loop control strategy is as follows: The fourth amplitude control voltage is adjusted according to a preset reduction rate until the fourth amplitude control voltage drops to a preset first amplitude control voltage within the operational amplifier; Based on the preset first amplitude control voltage, the on-resistance is controlled to remain greater than or equal to the first preset on-resistance threshold, thereby driving the circuit voltage to be within the preset normal operating voltage range.

8. A laser-driven anomaly protection device, characterized in that, An application is made in a laser driver protection system, the laser driver protection system including a laser driver main circuit and a control feedback circuit, the laser driver main circuit being connected to the control feedback circuit, the control feedback circuit including a MOSFET and an operational amplifier, the operational amplifier being connected to the laser driver main circuit through a sampling resistor, and the MOSFET being electrically connected to the operational amplifier, the device comprising: A monitoring module is used to monitor the loop voltage of the laser drive main circuit in real time; The overvoltage and overcurrent protection module is used to determine that the laser drive main circuit is in an overvoltage and overcurrent abnormal state when the circuit voltage is greater than the preset target protection voltage, and to regulate the MOS transistor and the operational amplifier to perform overvoltage and overcurrent protection according to the preset overvoltage and overcurrent abnormal circuit control strategy. A short-circuit protection module is used to determine that the laser drive main circuit is in a short-circuit fault state when the circuit voltage is greater than or equal to a preset short-circuit protection voltage, and to regulate the MOS transistor and the operational amplifier to perform short-circuit protection according to a preset short-circuit fault circuit control strategy. The recovery current runaway protection module is used to determine that the laser drive main circuit is in a short circuit fault clearance state when the circuit voltage rises from the preset safe voltage threshold to the preset recovery start threshold, and to regulate the MOS transistor and the operational amplifier to perform recovery current runaway protection according to the preset step-by-step recovery circuit control strategy.

9. An electronic device, characterized in that, It includes a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and executed as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The system stores a computer program capable of being loaded by a processor and executing the laser-driven anomaly protection method as described in any one of claims 1 to 7.

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