Method of manufacturing a transformer device, transformer device, and transformer apparatus

Abstract

The preparation method of the transformer device, the transformer device and the transformer equipment provided by the embodiments of the present disclosure comprise: preparing a first insulating substrate; preparing a second insulating substrate; arranging a first side of the second insulating substrate to face a first side of the first insulating substrate; performing alignment operation and adhesion operation on the first side of the first insulating substrate and the first side of the second insulating substrate to accommodate a magnetic core in a groove; preparing an upper conductive trace structure; preparing a lower conductive trace structure; forming a first via structure on the first insulating substrate and the second insulating substrate, and arranging a conductive material on the sidewall of the first insulating substrate and the second insulating substrate exposed due to the formation of the first via structure to form a first conductive via structure; and adhering a first side of the upper conductive trace structure to a second side of the second insulating substrate, and adhering a first side of the lower conductive trace structure to a second side of the first insulating substrate.

Description

Technical Field

[0001] This invention relates to the field of embedded magnetic component devices and related technical fields, specifically to a method for manufacturing a transformer device, a transformer device, and a converter device. Background Technology

[0002] Small transformer devices have a wide range of applications, such as in power supply units (various converters), where they often include transformer windings and magnetic cores. For example, prior art solution GB2535762B discloses a method for manufacturing an embedded magnetic element device, which includes: a) preparing a substrate insulating base plate including a cavity for a magnetic core, the cavity having a cavity bottom plate and sidewalls connected by the cavity bottom plate; b) applying one or more adhesives to discrete locations inside the cavity or on the magnetic core to form one or more adhesive coating attachment points for the magnetic core; c) mounting the magnetic core inside the cavity; d) coating a cover layer on the substrate insulating base plate, covering the magnetic core and the cavity, to obtain an insulating base plate; e) forming one or more electrical windings, at least through the insulating base plate adjacent to the cavity and arranged around the magnetic core, wherein the magnetic core is fixed in the cavity by one or more discrete adhesive coating attachment points.

[0003] In the above technical solution, the magnetic element is fixed in the cavity of the substrate insulating plate by one or more discrete adhesive coating attachment points. Before forming conductive or metal traces, on the one hand, an insulating layer needs to be covered on one side of the insulating plate, and then upper and lower conductive traces are formed on the insulating layer to connect the conductive vias. On the other hand, the process of preparing other insulating layers needs to be carried out after the process of upper and lower conductive traces is completed. This reduces the manufacturing efficiency of the transformer device and increases the process complexity. Summary of the Invention

[0004] In view of this, the embodiments described herein provide a method for fabricating a transformer device, a transformer device, and a converter device to improve fabrication efficiency and reduce fabrication process complexity.

[0005] In a first aspect, according to the present disclosure, a method for preparing a transformer device is provided, comprising: A first insulating substrate is prepared, wherein the first insulating substrate has a first side and a second side opposite to the first side, the first side of the first insulating substrate includes a cavity region and a non-cavity region, and the cavity region is formed with a trench; A second insulating substrate is prepared, wherein the second insulating substrate has a first side and a second side opposite to the first side, and a magnetic core is attached to the first side of the second insulating substrate by dispensing adhesive. The first side of the second insulating substrate is arranged to face the first side of the first insulating substrate; Alignment and bonding operations are performed on the first side of the first insulating substrate and the first side of the second insulating substrate to accommodate the magnetic core in the trench. An upper conductive trace structure is prepared, wherein a first upper conductive trace is formed on the first side of the upper conductive trace structure; A lower conductive trace structure is prepared, wherein a first lower conductive trace is formed on the first side of the lower conductive trace structure; A first through-hole structure is formed on a first insulating substrate and a second insulating substrate, and conductive material is disposed on the sidewalls of the first insulating substrate and the second insulating substrate exposed due to the formation of the first through-hole structure to form a first conductive through-hole structure, wherein the first conductive through-hole structure includes an external conductive connector and an internal conductive connector. The first side of the upper conductive trace structure is bonded to the second side of the second insulating substrate, and the first side of the lower conductive trace structure is bonded to the second side of the first insulating substrate, so that the outer conductive connector is connected to the inner conductive connector through the first upper conductive trace and the first lower conductive trace.

[0006] In some embodiments of this disclosure, the alignment operation includes: Based on the first position information of at least one first alignment mark located on the first insulating substrate in the target coordinate system, and the second position information of at least one second alignment mark located on the second insulating substrate or magnetic core in the target coordinate system, the target moving distance and target moving direction of the second insulating substrate relative to the first insulating substrate are determined. According to the target moving distance and target moving direction, the second insulating substrate is moved so that the magnetic core is accommodated in the trench when the first side of the first insulating substrate is bonded to the first side of the second insulating substrate.

[0007] In some embodiments of this disclosure, at least one first alignment mark is located in a non-cavity region, and at least one second alignment mark is located on a portion of a first side of a second insulating substrate that is not in contact with the magnetic core.

[0008] In some embodiments of this disclosure, at least one first alignment mark is located in the cavity region, and at least one second alignment mark is located on the first target surface of the magnetic core, wherein the first target surface is opposite to the trench when the magnetic core is housed in the trench.

[0009] In some embodiments of this disclosure, at least one first alignment mark is located on a portion of a first insulating substrate that is different from a first side and a second side of the first insulating substrate, and at least one second alignment mark is located on a portion of a second insulating substrate that is different from a first side and a second side of the second insulating substrate.

[0010] In some embodiments of this disclosure, the adhesive operation includes: Using a first adhesive layer formed on a first side of a first insulating substrate, the first side of the first insulating substrate is bonded to the first side of a second insulating substrate by a lamination process.

[0011] In some embodiments of this disclosure, the first adhesive layer is formed in a non-cavity region.

[0012] In some embodiments of this disclosure, a first adhesive layer is formed on the bottom wall of the non-cavity region and the trench.

[0013] In some embodiments of this disclosure, the fabrication of an upper conductive trace structure includes: A third insulating substrate is prepared, wherein the third insulating substrate has a first side and a second side opposite to the first side; A first metal layer and a second metal layer are formed on the first and second sides of the third insulating substrate, respectively. The first metal layer is processed to form the first upper conductive trace.

[0014] In some embodiments of this disclosure, the fabrication of a lower conductive trace structure includes: A fourth insulating substrate is prepared, wherein the fourth insulating substrate has a first side and a second side opposite to the first side; A third metal layer and a fourth metal layer are formed on the first and second sides of the fourth insulating substrate, respectively. The third metal layer is processed to form the first lower conductive trace.

[0015] In some embodiments of this disclosure, conductive material is disposed on the sidewalls exposed due to the formation of the first conductive via structure on the first insulating substrate and the second insulating substrate to form the first conductive via structure, including: Metal material is formed or conductive tubes are provided on the sidewalls exposed by the formation of the first through-hole structure on the first insulating substrate and the second insulating substrate to form the first conductive through-hole structure.

[0016] In a second aspect, according to the present disclosure, a transformer device is provided, prepared according to the method described in any one of the first aspects, comprising: A first insulating substrate has a first side and a second side opposite to the first side. The first side of the first insulating substrate includes a cavity region and a non-cavity region. The cavity region is formed with a trench, which has an inner periphery and an outer periphery. The second insulating substrate has a first side and a second side opposite to the first side. A magnetic core is attached to the first side of the second insulating substrate by dispensing adhesive. The magnetic core has a first segment and a second segment. The first side of the second insulating substrate is bonded to the first side of the first insulating substrate by a first adhesive layer, and a trench accommodates the magnetic core. The first adhesive layer is formed on the first side of the first insulating substrate. The upper conductive trace structure and the lower conductive trace structure are provided. A first upper conductive trace is formed on the first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is disposed opposite to the second side of the second insulating substrate. A first lower conductive trace is formed on the first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is disposed opposite to the second side of the first insulating substrate. An external conductive connector penetrates the first and second insulating substrates at the outer periphery of the adjacent trench, and forms an electrical connection between a corresponding first upper conductive trace and a corresponding first lower conductive trace; and An internal conductive connector penetrates the first and second insulating substrates at the inner periphery of the adjacent trench, and the internal conductive connector forms an electrical connection between the corresponding first upper conductive trace and the corresponding first lower conductive trace. The first upper conductive trace, inner conductive connector, outer conductive connector and first lower conductive trace formed around the first section of the magnetic core form the primary winding of the transformer device, and the first upper conductive trace, inner conductive connector, outer conductive connector and first lower conductive trace formed around the second section of the magnetic core form the secondary winding of the transformer device.

[0017] Thirdly, according to this disclosure, a converter device is provided, comprising a transformer assembly prepared according to the method described in any one of the first aspects, or comprising the transformer assembly described in the second aspect.

[0018] According to the method for manufacturing a transformer device provided in this disclosure, a first insulating substrate and a second insulating substrate are firstly prepared. A groove is formed on a first side of the first insulating substrate, and a magnetic core is attached to the first side of the second insulating substrate by dispensing adhesive. Then, by arranging the first side of the second insulating substrate facing the first side of the first insulating substrate, and after alignment and bonding operations, the magnetic core is accommodated in the groove. The first insulating substrate serves two purposes: firstly, it fixes the magnetic core, and secondly, it acts as an insulating layer between the upper and lower conductive trace structures, improving the insulation performance between the first upper and lower conductive traces. Next, after bonding the first and second insulating substrates, mechanical drilling technology can be used to further bond the first and second insulating substrates. The substrate is processed to form a first through-hole structure. Then, conductive material is arranged on the exposed sidewalls of the first insulating substrate and the second insulating substrate due to the formation of the first through-hole structure to form a first conductive through-hole structure, which can improve the efficiency and reliability of forming the first through-hole structure. Furthermore, the first side of the upper conductive trace structure is pressed to the second side of the second insulating substrate by a lamination process, and the first side of the lower conductive trace structure is pressed to the second side of the first insulating substrate. The first upper conductive trace and the first lower conductive trace are electrically connected through the first conductive through-hole structure. Since the process of preparing the upper conductive trace structure and the lower conductive trace structure can be carried out simultaneously with the process of forming the first conductive through-hole structure on the first insulating substrate and the second insulating substrate, the preparation process is simpler and the preparation efficiency is improved.

[0019] The above description is merely an overview of the technical solutions of the embodiments of this application. In order to better understand the technical means of the embodiments of this application and to implement them in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the embodiments of this application more obvious and understandable, specific implementation methods of this application are described below. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly described below. It should be understood that the drawings described below only relate to some embodiments of this disclosure and are not intended to limit this disclosure, wherein: Figure 1 This is a schematic flowchart of a method for manufacturing a transformer device according to an embodiment of this disclosure; Figure 2 This is a schematic cross-sectional view of a first insulating substrate provided in an embodiment of this disclosure; Figure 3 This is a top view of a first insulating substrate provided in an embodiment of the present disclosure; Figure 4 This is a schematic cross-sectional view of a second insulating substrate provided in an embodiment of this disclosure; Figure 5This is a top view of a second insulating substrate provided in an embodiment of the present disclosure; Figure 6 This is a schematic cross-sectional view of another second insulating substrate provided in an embodiment of this disclosure; Figure 7 This is a top view of another second insulating substrate provided in an embodiment of this disclosure; Figure 8 This is a top view of another first insulating substrate provided in an embodiment of this disclosure; Figure 9 This is a top view of another second insulating substrate provided in this embodiment of the present disclosure; Figure 10 This is a top view of another first insulating substrate provided in the embodiments of this disclosure; Figure 11 This is a top view of another second insulating substrate provided in this embodiment of the present disclosure; Figure 12 This is a schematic cross-sectional view of another first insulating substrate provided in an embodiment of this disclosure; Figure 13 This is a cross-sectional structural schematic diagram of another second insulating substrate provided in the embodiments of this disclosure; Figure 14 This is a cross-sectional structural schematic diagram of another first insulating substrate provided in the embodiments of this disclosure; Figure 15 This is a cross-sectional structural schematic diagram of another second insulating substrate provided in the embodiments of this disclosure; Figure 16 This is a top view of another second insulating substrate provided in this embodiment of the present disclosure; Figure 17 This is a cross-sectional structural schematic diagram of another second insulating substrate provided in the embodiments of this disclosure; Figure 18 This is a cross-sectional structural schematic diagram of a portion of a transformer device provided in an embodiment of this disclosure; Figure 19 This is a top view schematic diagram of a portion of the structure of a transformer device provided in an embodiment of this disclosure; Figure 20 This is a cross-sectional structural schematic diagram of a partial structure of another transformer device provided in an embodiment of this disclosure; Figure 21 This is a top view schematic diagram of a partial structure of another transformer device provided in this embodiment; Figure 22 This is a cross-sectional structural schematic diagram of an upper conductive trace structure provided in an embodiment of this disclosure; Figure 23This is a top view schematic diagram of an upper conductive trace structure provided in an embodiment of the present disclosure; Figure 24 This is a cross-sectional structural schematic diagram of a lower conductive trace structure provided in an embodiment of this disclosure; Figure 25 This is a top view schematic diagram of a lower conductive trace structure provided in an embodiment of this disclosure; Figure 26 This is a cross-sectional structural schematic diagram of a portion of a transformer device provided in another embodiment of the present disclosure; Figure 27 This is a top view schematic diagram of a partial structure of another transformer device provided in this disclosure embodiment; Figure 28 This is a cross-sectional structural schematic diagram of a transformer device provided in an embodiment of this disclosure; Figure 29 This is a top view of a transformer device provided in an embodiment of this disclosure; Figure 30 This is a cross-sectional view of another conductive trace structure provided in this embodiment of the present disclosure; Figure 31 This is a cross-sectional schematic diagram of another lower conductive trace structure provided in this embodiment of the present disclosure; Figure 32 This is a cross-sectional structural schematic diagram of another transformer device provided in an embodiment of this disclosure; Figure 33 This is a cross-sectional structural schematic diagram of another transformer device provided in this disclosure embodiment; Figure 34 This is a cross-sectional structural schematic diagram of another transformer device provided in this disclosure embodiment; Figure 35 This is a top view of the winding structure of a transformer device provided in an embodiment of this disclosure.

[0021] In the accompanying diagram, markers with the same last two digits correspond to the same elements. It should be noted that the elements in the diagram are schematic and not drawn to scale. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are also within the scope of protection of this disclosure.

[0023] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this subject matter pertains. It will be further understood that terms such as those defined in commonly used dictionaries shall be interpreted as having the meaning consistent with their meaning in the context of the specification and in the relevant art, and shall not be interpreted in an idealized or overly formal form unless otherwise explicitly defined herein. As used herein, the statement of “connecting” or “coupling” two or more parts together shall mean that these parts are directly joined together or joined through one or more intermediate components.

[0024] The term "embodiment" as used herein means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of the phrase "embodiment" in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0025] In this article, the terms "or" or "or" are merely a way of describing the relationship between related objects, indicating that there can be three kinds of relationships. For example, A or B can mean that only A exists, both A and B exist, or only B exists.

[0026] Furthermore, in all embodiments of this disclosure, terms such as “first” and “second” are used only to distinguish one component (or part of a component) from another component (or another part of a component).

[0027] In the description of this application, unless otherwise stated, "multiple" means two or more.

[0028] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0029] Based on the problems existing in the prior art, this disclosure provides a method for manufacturing a transformer device. Figure 1 This is a schematic flowchart of a method for manufacturing a transformer device according to an embodiment of this disclosure. Figures 2-29 This is a schematic diagram of the process structure of the transformer manufacturing apparatus provided in the embodiments of this disclosure, combined with... Figure 1 and Figures 2-29 The methods for manufacturing transformer devices include: S110. A first insulating substrate is formed, wherein the first insulating substrate has a first side and a second side opposite to the first side, the first side of the first insulating substrate includes a cavity region and a non-cavity region, and the cavity region is formed with a trench.

[0030] like Figure 2 and Figure 3 As shown, the first insulating substrate 101 has annular grooves 102 for accommodating the magnetic core. In this example, the first insulating substrate 101 is formed of a resin material, such as FR4. FR4 is a composite "prepreg" material consisting of woven glass fiber cloth impregnated with an epoxy resin binder. The resin is pre-dried but not hardened, so that when heated, it flows and acts as a binder for the glass fiber material. FR4 has been found to have good thermal and insulating properties.

[0031] Combination Figure 2 and Figure 3 Region AA is the cavity region, and region BB is the non-cavity region.

[0032] S120. A second insulating substrate is formed, wherein the second insulating substrate has a first side and a second side opposite to the first side, and a magnetic core is attached to the first side of the second insulating substrate by dispensing adhesive.

[0033] like Figure 4 and Figure 5 As shown, after the second insulating substrate 104 is formed, adhesive 105 is formed on the first side of the second insulating substrate 104, and then the magnetic core 103 is attached to the first side of the second insulating substrate 104 by adhesive 105.

[0034] As a specific example, one or more drops of adhesive 105 are applied to the first side of the second insulating substrate 104 at the location where the magnetic core 103 needs to be attached. The magnetic core 103 is then attached to the first side of the second insulating substrate 104 by applying the adhesive 105. Figure 5 In the example, adhesive 105 is formed at four positions (up, down, left, right) on the second insulating substrate 104 where the magnetic core 103 is attached, to ensure that the magnetic core 103 can be more firmly attached to the first side of the second insulating substrate 104.

[0035] It should be noted that in the above embodiments, the adhesive 105 can be any suitable silicone-based or epoxy resin-based adhesive. The quantity and location of the adhesive 105 are not specifically limited in this disclosure embodiment. Furthermore, this disclosure embodiment does not specifically limit the material of the adhesive 105.

[0036] S130, Arrange the first side of the second insulating substrate to face the first side of the first insulating substrate.

[0037] In step S120, the magnetic core 103 is attached to the first side of the second insulating substrate 104. In order to ensure that the magnetic core 103 attached to the first side of the second insulating substrate 104 is accommodated in the trench 102 after the first side of the first insulating substrate 101 and the first side of the second insulating substrate 104 are aligned and bonded, the first side of the second insulating substrate 104 needs to be arranged to face the first side of the first insulating substrate 101.

[0038] In the process of arranging the first side of the second insulating substrate 104 toward the first side of the first insulating substrate 101, the second insulating substrate 104 can be inverted using a mechanical clamping device. The inverted second insulating substrate is as follows: Figure 6 and Figure 7 As shown, the present disclosure does not specifically limit the process of the inverted second insulating substrate 104.

[0039] S140, perform alignment and bonding operations on the first side of the first insulating substrate and the first side of the second insulating substrate to accommodate the magnetic core in the trench.

[0040] The alignment and bonding operations of the first side of the first insulating substrate and the first side of the second insulating substrate can employ various alignment and bonding methods, as long as the magnetic core can ultimately be accommodated in the trench. For example, the alignment operation process may include: determining the target moving distance and target moving direction of the second insulating substrate relative to the first insulating substrate based on the first position information of at least one first alignment mark located on the first insulating substrate in the target coordinate system, and the second position information of at least one second alignment mark located on the second insulating substrate or the magnetic core in the target coordinate system; moving the second insulating substrate according to the target moving distance and target moving direction, so that the magnetic core is accommodated in the trench when the first side of the first insulating substrate is bonded to the first side of the second insulating substrate.

[0041] As one specific embodiment, at least one first alignment mark 106 is located in the non-cavity region BB, and at least one second alignment mark 107 is located on the first side of the second insulating substrate 104 in a portion that does not contact the magnetic core 103.

[0042] like Figure 8 As shown, a first alignment mark 106 is set in the non-cavity region BB, as follows. Figure 9As shown, a second alignment mark 107 is provided on the first side of the second insulating substrate 104 in a portion that does not contact the magnetic core 103. The distance between at least one first alignment mark 106 formed in the non-cavity region BB of the first insulating substrate 101 and the edge of the groove 102 of the first insulating substrate 101 is fixed. The distance between at least one second alignment mark 107 formed on the first side of the second insulating substrate 104 in a portion that does not contact the magnetic core 103 and the edge of the magnetic core 103 is also fixed. At this point, firstly, the first position information of the first alignment mark 106 in the target coordinate system and the second position information of the second alignment mark 107 in the target coordinate system are obtained. The first position information of the first alignment mark 106 in the target coordinate system indirectly reflects the position information of the trench 102 in the target coordinate system, and the second position information of the second alignment mark 107 in the target coordinate system indirectly reflects the position information of the magnetic core 103 in the target coordinate system. Then, based on the first position information of the first alignment mark 106 in the target coordinate system and the second position information of the second alignment mark 107 in the target coordinate system, the target moving distance and target moving direction of the second insulating substrate 104 relative to the first insulating substrate 101 are determined. Finally, based on the target moving distance and target moving direction, the second insulating substrate 104 is moved.

[0043] Taking a three-dimensional coordinate system as an example, the target movement distance can include X-axis movement distance, Y-axis movement distance, and Z-axis movement distance, and the target movement direction can include positive X-axis movement direction, negative X-axis movement direction, positive Y-axis movement direction, negative Y-axis movement direction, positive Z-axis movement direction, and negative Z-axis movement direction. It should be noted that, depending on the actual scenario, the Z-axis movement distance in the alignment operation can be zero. That is, the result of the alignment operation is the alignment of the corresponding surfaces of the first insulating substrate 101 and the second insulating substrate 104 in the two-dimensional XY plane, and the movement of the insulating substrate in the Z-axis can be used to achieve the aforementioned bonding operation.

[0044] As another specific embodiment, at least one first alignment mark 106 is located in cavity region AA, and at least one second alignment mark 107 is located on the first target surface of magnetic core 103, wherein the first target surface is opposite to the groove 102 when magnetic core 103 is accommodated in the groove 102.

[0045] Similarly, such as Figure 10 As shown, at least one first alignment mark 106 is formed in the cavity region AA of the first insulating substrate 101, such as Figure 11 As shown, at least one second alignment mark 107 is formed on the first target surface of the magnetic core 103. The alignment operation process of the first side of the first insulating substrate 101 and the first side of the second insulating substrate 104 based on the first position information of the first alignment mark 106 and the second position information of the second alignment mark 107 is the same as described above. Figure 8 and Figure 9 The principle of the alignment operation described may be the same, but for the sake of brevity, this disclosure will not describe it in detail.

[0046] In another specific embodiment, at least one first alignment mark 106 is located on a portion of the first insulating substrate 101 that is different from the first side and the second side of the first insulating substrate 101, and at least one second alignment mark 107 is located on a portion of the second insulating substrate 104 that is different from the first side and the second side of the second insulating substrate 104.

[0047] Specifically, such as Figure 12 As shown, at least one first alignment mark 106 is formed on the sidewall of the first insulating substrate 101 (the sidewall of the first insulating substrate 101 is any outer surface of the first insulating substrate 101 other than the first and second surfaces), such as Figure 13 As shown, at least one second alignment mark 107 is formed on the sidewall of the second insulating substrate 104 (the sidewall of the second insulating substrate 104 is the other outer surface of the second insulating substrate 104 other than the first surface and the second surface).

[0048] Preferably, the sidewall of the first insulating substrate 101 forming the first alignment mark 106 and the sidewall of the second insulating substrate 104 forming the second alignment mark 107 are located in the same orientation, or the sidewall of the first insulating substrate 101 forming the first alignment mark 106 and the sidewall of the magnetic core 103 forming the second alignment mark 107 are located in the same orientation. "Same orientation" can be understood as the sidewalls of the first insulating substrate 101 including a left sidewall, a right sidewall, a front sidewall, and a rear sidewall; the sidewalls of the second insulating substrate 104 including a left sidewall, a right sidewall, a front sidewall, and a rear sidewall; and the sidewalls of the magnetic core 103 including a left sidewall, a right sidewall, a front sidewall, and a rear sidewall. Therefore, if the first alignment mark 106 is formed on the front sidewall of the first insulating substrate 101, and the second alignment mark 107 is formed on the front sidewall of the second insulating substrate 104, or on the front sidewall of the magnetic core 103, then... Figure 12 An example shows that a first alignment mark 106 is formed on the sidewall of the first insulating substrate 101. Figure 13 The example shows that the second alignment mark 107 is formed on the sidewall of the second insulating substrate 104. Figure 14 An example shows that a first alignment mark 106 is formed on the sidewall of the first insulating substrate 101. Figure 15 An example is shown where a second alignment mark 107 is formed on the sidewall of the magnetic core 103.

[0049] It should be noted that, in the above embodiments, the exemplary representation shows that there is one first alignment mark 106 and one second alignment mark 107. However, there can also be multiple first alignment marks 106 and second alignment marks 107. Increasing the number of first alignment marks 106 and second alignment marks 107 helps to improve the alignment accuracy of the alignment operation of the first insulating substrate 101 and the second insulating substrate 104. Alternatively or additionally, the shape of these alignment marks can be specially designed, for example, circular, square, polygonal, etc.

[0050] Furthermore, the above embodiments exemplarily show that the magnetic core 103 attached to the first side of the second insulating substrate 104 is one, such as... Figure 4 and Figure 5 As shown, the second insulating substrate 104 formed is the second insulating substrate 104 corresponding to a single transformer device. In actual production, in order to improve the efficiency of transformer device production, such as in the mass production of transformer devices, a strip-shaped or sheet-shaped second insulating substrate 104 can be selected, and a magnetic core array (including one row of multiple magnetic cores or multiple rows of multiple magnetic cores) can be formed on the strip-shaped or sheet-shaped second insulating substrate 104. Figure 16 and Figure 17 An exemplary embodiment shows a magnetic core array formed on a second insulating substrate 104, comprising two rows of eight magnetic cores 103. When multiple magnetic cores 103 are attached to the second insulating substrate 104, as a preferred implementation, after determining the target moving distance and target moving direction, the first insulating substrate 101 is moved according to the target moving distance and target moving direction, so that the magnetic cores 103 are accommodated in the groove 102 when the first side of the first insulating substrate 101 is bonded to the first side of the second insulating substrate 104. That is, when multiple magnetic cores 103 are attached to the second insulating substrate 104, the alignment operation of the first insulating substrate 101 and the second insulating substrate 104 is achieved by moving the first insulating substrate 101, avoiding problems such as some magnetic cores 103 falling off or the second insulating substrate 104 deforming during the movement of the second insulating substrate 104 due to the large number of magnetic cores 103 attached to the second insulating substrate 104.

[0051] The bonding operation described above can be performed after the alignment operation is completed, before the alignment operation is completed, or even simultaneously with the alignment operation. For example, after the alignment operation of the first side of the first insulating substrate 101 and the first side of the second insulating substrate 104 is completed, a first adhesive layer 108 is formed on the first side of the first insulating substrate 101, and the first side of the first insulating substrate 101 and the first side of the second insulating substrate 104 are bonded together through the first adhesive layer 108.

[0052] As a concrete example, such as Figure 18 and Figure 19As shown, a first adhesive layer 108 is formed in the non-cavity region. By forming the first adhesive layer 108 in the non-cavity region of the first insulating substrate 101, the first insulating substrate 101 and the second insulating substrate 104 are bonded together based on the first adhesive layer 108. The first adhesive layer 108 formed in the non-cavity region of the first insulating substrate 101 serves as an adhesive layer between the first insulating substrate 101 and the second insulating substrate 104, ensuring that the first side of the first insulating substrate 101 is bonded to the first side of the second insulating substrate 104. On the other hand, it ensures that there is no air gap in the portion of the second insulating substrate 104 that contacts the first side of the first insulating substrate 101.

[0053] As another specific example, such as Figure 20 and Figure 21 As shown, the first adhesive layer 108 is formed in the non-cavity region and the bottom wall of the trench 102. To improve the manufacturing efficiency, a whole layer of the first adhesive layer 108 can be formed on the first side of the first insulating substrate 101. Since the first side of the first insulating substrate 101 has a trench 102, during the process of forming a whole layer of the first adhesive layer 108, some of the first adhesive layer 108 will fall into the trench, so that the first adhesive layer 108 is formed in the non-cavity region and the bottom wall of the trench 102. The first adhesive layer 108 formed on the bottom wall of the trench 102 can further fix the magnetic core 103.

[0054] It should be noted that the process of bonding the first side of the first insulating substrate 101 to the first side of the second insulating substrate 104 can be a pressing process or other assembly processes, and the embodiments disclosed herein do not specifically limit this.

[0055] also, Figure 18 and Figure 20 In the example, after the first side of the first insulating substrate 101 is bonded to the first side of the second insulating substrate 104, the magnetic core 103 fits perfectly with the trench 102. In a specific implementation, the size of the magnetic core 103 may be slightly smaller than the size of the trench 102. For example, there may be a certain air gap between the sidewall of the magnetic core 103 and the sidewall of the trench 102, and / or there may be a certain air gap between the bottom of the magnetic core 103 and the bottom wall of the trench 102.

[0056] S150. An upper conductive trace structure is prepared, wherein a first upper conductive trace is formed on the first side of the upper conductive trace structure.

[0057] Specifically, the fabrication of the upper conductive trace structure includes: fabricating a third insulating substrate 201, wherein the third insulating substrate 201 has a first side and a second side opposite to the first side; fabricating a first metal layer and a second metal layer on the first side and the second side of the third insulating substrate 201 respectively; and processing the first metal layer to form a first upper conductive trace.

[0058] In one specific embodiment, a third insulating substrate 201 is first prepared. Then, a first metal layer (not shown) is deposited on the first side of the third insulating substrate 201, and a second metal layer 205 is deposited on the second side of the third insulating substrate 201. A mask layer is then formed on the first metal layer. Finally, the first metal layer is etched using an etching process to form the pattern corresponding to the first upper conductive trace 202. The prepared upper conductive trace structure 20 is as follows: Figure 22 and Figure 23 As shown, in this embodiment, a first metal layer is first deposited on the first side of the third insulating substrate 201, and then the first metal layer is etched by a mask etching process to form an upper conductive trace structure. Compared with forming the first upper conductive trace 202 first and then transferring it to the third insulating substrate 201, this mask etching process can avoid accidental damage to the first upper conductive trace 202 during the transfer process.

[0059] In another specific implementation, a third insulating substrate 201 is first prepared, and then a first metal layer with a first upper conductive trace pattern is directly formed on the first side of the third insulating substrate 201 by deposition. Finally, a second metal layer 205 is prepared on the second side of the third insulating substrate 201. In this implementation, the prepared first metal layer with the first upper conductive trace pattern is directly formed on the first side of the third insulating substrate 201 without the need for a mask etching process, thereby improving the preparation efficiency.

[0060] S160. A lower conductive trace structure is prepared, wherein a first lower conductive trace is formed on the first side of the lower conductive trace structure.

[0061] Specifically, the fabrication of the lower conductive trace structure includes: fabricating a fourth insulating substrate 301, wherein the fourth insulating substrate 301 has a first side and a second side opposite to the first side; fabricating a third metal layer and a fourth metal layer on the first side and the second side of the fourth insulating substrate 301 respectively; and processing the third metal layer to form a first lower conductive trace.

[0062] The process for fabricating the lower conductive trace structure can be the same as or different from the process for fabricating the upper conductive trace structure. For example, the mask etching process described above regarding the fabrication process of the upper conductive trace structure can be used to fabricate the lower conductive trace structure; alternatively, the maskless etching process described above regarding the fabrication process of the upper conductive trace structure can be used to fabricate the lower conductive trace structure. The fabricated lower conductive trace structure 30 is as follows... Figure 24 and Figure 25 As shown, Figure 24 and Figure 25In the figure, 301 represents the fourth insulating substrate, 302 represents the first lower conductive trace formed on the third metal layer (not shown in the figure), and 305 represents the fourth metal layer.

[0063] In the above embodiments, since the transformer device has a magnetic core in the shape of a circle or ring, the hole-like structure formed during the process of forming the first upper conductive trace 202 on the first side of the upper conductive trace structure 20 and the first lower conductive trace 302 on the first side of the lower conductive trace structure 30 is appropriately formed along the segments of two arcs corresponding to the inner and outer annular circumferences.

[0064] It should be noted that, in the above embodiments, the first side of the upper conductive trace structure, in addition to forming the first upper conductive trace 202, also includes an electrically connected trace, and the first side of the lower conductive trace structure, in addition to forming the first lower conductive trace 302, also includes an electrically connected trace. This disclosure does not specifically limit this aspect.

[0065] S170. A first through-hole structure is formed on a first insulating substrate and a second insulating substrate, and conductive material is disposed on the sidewalls of the first insulating substrate and the second insulating substrate exposed due to the formation of the first through-hole structure to form a first conductive through-hole structure, wherein the first conductive through-hole structure includes an external conductive connector and an internal conductive connector.

[0066] Specifically, the formation of the first through-hole structure on the first insulating substrate 101 and the second insulating substrate 104 can be achieved based on mechanical drilling technology.

[0067] In step S140, the first side of the first insulating substrate 101 and the first side of the second insulating substrate 104 are aligned and bonded to accommodate the magnetic core 103 in the trench 102. Then, the first insulating substrate 101 and the second insulating substrate 104 are processed based on mechanical drilling technology to form an inner through-hole structure and an outer through-hole structure. That is, the first through-hole structure formed includes an inner through-hole structure and an outer through-hole structure.

[0068] In the above embodiments, a first through-hole structure is formed on the first insulating substrate 101 and the second insulating substrate 104, and conductive material is disposed on the exposed sidewalls of the first insulating substrate 101 and the second insulating substrate 104 due to the formation of the first through-hole structure, to form a first conductive through-hole structure. The specific implementation process includes: forming the first through-hole structure on the first insulating substrate 101 and the second insulating substrate 104; forming a metal material or providing conductive components on the exposed sidewalls of the first insulating substrate 101 and the second insulating substrate 104 due to the formation of the first through-hole structure, to form the first conductive through-hole structure. The formed first conductive through-hole structure includes an inner conductive connector 404 and an outer conductive connector 403, such as... Figure 26 and Figure 27 As shown.

[0069] The process of forming metal material on the sidewalls exposed by the formation of the first through-hole structure on the first insulating substrate 101 and the second insulating substrate 104 can be based on electroplating or other processes for forming metal material on the sidewalls (e.g., magnetron sputtering). This disclosure does not specifically limit the process.

[0070] In addition, although Figure 26 In the illustrated transformer assembly, the first conductive via structure (used to connect the first upper conductive trace and the first lower conductive trace) is formed by forming a metallic material on the sidewalls of the first insulating substrate 101 and the second insulating substrate 104 exposed due to the formation of the first via structure. However, it should be understood that in alternative embodiments, the first conductive via structure can be formed using other conductive connection structures, such as conductive tubing (which can be hollow or solid), in which case the conductive tubing can be inserted into the first via structure to electrically connect the first upper conductive trace and the first lower conductive trace. The conductive tubing can be a metallic tubing or other conductive non-metallic tubing. The metallic tubing can be pre-formed and fixed (e.g., by interference fit or adhesive) to the sidewalls of the first insulating substrate exposed due to the formation of the first via structure.

[0071] In the above embodiments, it is exemplarily shown that a first through-hole structure is formed on the first insulating substrate 101 and the second insulating substrate 104, and conductive material is disposed on the sidewalls of the first insulating substrate 101 and the second insulating substrate 104 exposed due to the formation of the first through-hole structure, so that the upper conductive trace structure and the lower conductive trace structure are formed after the formation of the first conductive through-hole structure. Alternatively, the first through-hole structure can be formed on the first insulating substrate 101 and the second insulating substrate 104, and conductive material is disposed on the sidewalls of the first insulating substrate 101 and the second insulating substrate 104 exposed due to the formation of the first through-hole structure, so that the formation of the first conductive through-hole structure and the preparation of the upper conductive trace structure and the lower conductive trace structure are performed simultaneously. Alternatively, the first conductive through-hole structure and the upper conductive trace structure and the lower conductive trace structure can be prepared first, and then the first through-hole structure can be formed on the first insulating substrate 101 and the second insulating substrate 104, and conductive material is disposed on the sidewalls of the first insulating substrate and the second insulating substrate exposed due to the formation of the first through-hole structure, so as to form the first conductive through-hole structure. The embodiments disclosed herein do not specifically limit this.

[0072] S180, the first side of the upper conductive trace structure is bonded to the second side of the second insulating substrate, and the first side of the lower conductive trace structure is bonded to the second side of the first insulating substrate, so that the outer conductive connector is connected to the inner conductive connector through the first upper conductive trace and the first lower conductive trace.

[0073] Since the windings in the transformer device are formed based on an outer conductive connector, an inner conductive connector, a first upper conductive trace, and a first lower conductive trace surrounding the magnetic core, after forming the first conductive through-hole structure, it is necessary to bond the first side of the upper conductive trace structure to the second side of the second insulating substrate 104, and to bond the first side of the lower conductive trace structure to the second side of the first insulating substrate 101, so that the outer conductive connector 403 can be connected to the inner conductive connector 404 through the first upper conductive trace 202 and the first lower conductive trace 302.

[0074] In a specific implementation, the first side of the upper conductive trace structure 20 can be directly pressed together with the first side of the second insulating substrate 104 using a lamination process.

[0075] As a concrete example, such as Figure 28 and Figure 29 As shown, a second adhesive layer 401 is first formed on the first side of the upper conductive trace structure 20, and then the first side of the upper conductive trace structure 20 is pressed together with the first side of the first insulating substrate 101 by a pressing process.

[0076] By forming a second adhesive layer 401 on the first side of the upper conductive trace structure 20, the second adhesive layer 401 serves as an adhesive to bond the upper conductive trace structure 20 to the first side of the first insulating substrate 101. On the other hand, the second adhesive layer 401 fills the area on the first side of the upper conductive trace structure 20 where the first upper conductive trace 202 is not formed, thereby ensuring that there is no air gap in the part where the upper conductive trace structure 20 and the first side of the first insulating substrate 101 are in contact.

[0077] Furthermore, a third adhesive layer 402 is formed on the first side of the lower conductive trace structure, and the first side of the lower conductive trace structure 30 is pressed together with the second side of the first insulating substrate 101 by a pressing process.

[0078] After the lower conductive trace structure 30 is formed, the first side of the lower conductive trace structure 30 can be directly laminated to the second side of the first insulating substrate 101 using a lamination process. Specifically, continuing the bonding... Figure 28 and Figure 29 First, a third adhesive layer 402 is formed on the first side of the lower conductive trace structure 30, and then the first side of the lower conductive trace structure 30 is pressed together with the second side of the first insulating substrate 101 by a pressing process.

[0079] Similarly, by forming a third adhesive layer 402 on the first side of the lower conductive trace structure 30, the third adhesive layer 402 serves as an adhesive to bond the lower conductive trace structure 30 to the second side of the first insulating substrate 101. On the other hand, the third adhesive layer 402 fills the area on the first side of the lower conductive trace structure 30 where the first lower conductive trace 302 is not formed, thereby ensuring that there is no air gap in the part where the lower conductive trace structure 30 and the second side of the first insulating substrate 101 are in contact.

[0080] It should be understood that if air gaps exist in the transformer assembly, such as air gaps above or below the transformer windings formed based on the upper and lower conductive trace structures, there is a risk of arcing and failure of the assembly. By pressing the upper conductive trace structure 20 and the first side of the second insulating substrate 104 together based on the second adhesive layer 401, and pressing the lower conductive trace structure 30 and the second side of the first insulating substrate 101 together based on the third adhesive layer 402, there are no air gaps in the contact area between the upper conductive trace structure 20 and the second insulating substrate 104, and there are no air gaps in the contact area between the first insulating substrate 101 and the lower conductive trace structure 30. This avoids the risk of arcing and failure after the transformer assembly is manufactured.

[0081] It should be noted that, Figure 28 and Figure 29 In the process of forming a second adhesive layer 401 on the first side of the upper conductive trace structure 20 and a third adhesive layer 402 on the first side of the lower conductive trace structure, if the second adhesive layer 401 and the third adhesive layer 402 are non-conductive adhesive materials, the second adhesive layer 401 is formed in the area on the first side of the upper conductive trace structure 20 where the first upper conductive trace 202 is not formed, and the third adhesive layer 402 is formed in the area on the first side of the lower conductive trace structure 30 where the first lower conductive trace 302 is not formed. Furthermore, the second adhesive layer 401 has the same thickness as the first metal layer in the upper conductive trace structure 20, and the third adhesive layer 402 has the same thickness as the third metal layer in the lower conductive trace structure 30. This ensures the electrical connection between the subsequent inner conductive connector and the outer conductive connector and the first upper conductive trace and the first lower conductive trace. If the second adhesive layer 401 and the third adhesive layer 402 are conductive adhesive materials, the second adhesive layer 401 can be formed on the first side of the upper conductive trace structure 20, and the third adhesive layer 402 can be formed on the first side of the lower conductive trace structure 30. Alternatively, the second adhesive layer 401 can be formed on the second side of the second insulating substrate 104, and the third adhesive layer 402 can be formed on the second side of the first insulating substrate 101. In this case, the thickness of the second adhesive layer 401 and the third adhesive layer 402 is not specifically limited.

[0082] In the above embodiments, the first solid boundary between the sidewalls exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the second insulating substrate 104 and the outer periphery of the trench 102 has a first thickness D1, and the second solid boundary between the sidewalls exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the second insulating substrate 104 and the inner periphery of the trench 102 has a second thickness D2, wherein the first thickness D1 and the second thickness D2 satisfy any of the following conditions: the first thickness D1 and the second thickness D2 are respectively in the range of 0.25 mm to 0.55 mm; the first thickness D1 and the second thickness D2 are respectively in the range of 0.60 mm to 2.00 mm; the first thickness D1 is in the range of 0.60 mm to 2.00 mm and the second thickness D2 is in the range of 0.25 mm to 0.55 mm; and the first thickness D1 is in the range of 0.25 mm to 0.55 mm and the second thickness D2 is in the range of 0.60 mm to 2.00 mm.

[0083] Specifically, in combination Figure 28 The first thickness of the first solid boundary between the sidewalls exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the second insulating substrate 104 and the outer periphery of the trench 102 is D1, and the second thickness of the second solid boundary between the sidewalls exposed due to the formation of the first through-hole structure of the first insulating substrate 101 and the second insulating substrate 104 and the inner periphery of the trench 102 is D2.

[0084] In the above embodiments, the first through-hole structure is formed based on mechanical drilling technology. When forming the first through-hole structure on the first insulating substrate 101 and the second insulating substrate 104 based on mechanical drilling technology, various combinations of the first thickness D1 and the second thickness D2 can be formed. This embodiment does not specifically limit this, as long as the formed first conductive through-hole structure is insulated from the magnetic core 103 disposed in the trench 102, and no arc breakdown occurs between the transformer windings.

[0085] In the above embodiments, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer, as well as the metal material formed on the sidewall of the first insulating substrate, are generally copper, but may also be other conductive metal materials. The conductive metal materials that make them up may be the same or different, and this disclosure does not specifically limit them.

[0086] In the above examples, the first insulating substrate 101, the second insulating substrate 104, the third insulating substrate 201 and the fourth insulating substrate 301 are made of FR4, but may include any suitable PCB laminate material having sufficient dielectric strength to provide the required insulation (non-limiting examples include FR4-08, G11 and FR5), and their constituent materials may be the same or different.

[0087] It should be noted that the thickness of the first insulating substrate can be flexibly set according to the core size, and this disclosure does not impose any limitations on it. In practice, the core material and size can be determined based on the transformer's electrical parameters and performance indicators, thereby determining the thickness of the first insulating substrate. The thicknesses of the second, third, and fourth insulating substrates can be between 0.1 and 1.0 mm (e.g., 0.1 mm, 0.2 mm, and 0.4 mm), and the thicknesses of the third and fourth insulating substrates can be the same or different.

[0088] In addition to the insulating properties of the materials themselves, the first adhesive layer 108 must bond well to the first side of the first insulating substrate 101 and the first side of the second insulating substrate 104 to form a tight bond connection; the second adhesive layer 401 must bond well to the second side of the second insulating substrate 104 and the first side of the third insulating substrate 201 to form a tight bond connection; and the third adhesive layer 402 must bond well to the second side of the first insulating substrate 101 and the first side of the fourth insulating substrate 301 to form a tight bond connection. The term "tight bond connection" refers to a tight, consistent bond or joint between two materials that should maintain its integrity after relevant environmental conditions, such as high or low temperatures, thermal shock, and humidity. Any materials selected also need to have good thermal cycling properties to prevent cracking during use and are preferably hydrophobic so that water does not affect the performance of the device.

[0089] In the above embodiments, the first insulating substrate 101, the second insulating substrate 104, the third insulating substrate 201 and the fourth insulating substrate 301 may be formed of other insulating materials (e.g., ceramics, thermoplastics and epoxy resins).

[0090] The magnetic core 103 is preferably a ferrite core because it provides the required inductance for the device. In alternative embodiments, other types of magnetic materials are also possible. While the core is toroidal in the example above, it can have different shapes in other embodiments. Non-limiting examples include elliptical or elongated toroidal shapes, toroidal shapes with gaps, and core shapes such as EE, EI, I, EFD, EP, UI, and UR. Accordingly, the groove 102 has a shape that matches the magnetic core 103 to accommodate it. The circular or toroidal core in this example can reduce the failure rate of the device during manufacturing. The core can be coated with an insulating material to reduce the likelihood of breakdown between the core and the first conductive via structure or conductive trace. The edges of the core can be chamfered to form rounded or beveled edges, thereby improving structural reliability and insulation safety. Exemplarily, a square toroidal core can have chamfered edges, thereby forming rounded or beveled corners, reducing stress concentration and preventing tip discharge.

[0091] The method for manufacturing a transformer device provided in this disclosure firstly involves preparing a first insulating substrate and a second insulating substrate. A groove is formed on a first side of the first insulating substrate, and a magnetic core is attached to the first side of the second insulating substrate via adhesive dispensing. Then, by arranging the first side of the second insulating substrate facing the first side of the first insulating substrate, and following alignment and bonding operations, the magnetic core is accommodated in the groove. The first insulating substrate serves two purposes: firstly, it fixes the magnetic core, and secondly, it acts as an insulating layer between the upper and lower conductive trace structures, improving the insulation performance between the first upper and lower conductive traces. Next, after bonding the first and second insulating substrates, mechanical drilling can be used to further enhance the insulation performance of the first insulating substrate. The substrate and the second insulating substrate are processed to form a first through-hole structure. Then, conductive material is arranged on the exposed sidewalls of the first and second insulating substrates due to the formation of the first through-hole structure to form a first conductive through-hole structure, which can improve the efficiency and reliability of forming the first through-hole structure. Furthermore, the first side of the upper conductive trace structure is pressed to the second side of the second insulating substrate by a lamination process, and the first side of the lower conductive trace structure is pressed to the second side of the first insulating substrate. The first upper conductive trace and the first lower conductive trace are electrically connected through the first conductive through-hole structure. Since the upper conductive trace structure and the lower conductive trace structure are pressed to the first and second insulating substrates after lamination by a lamination process, the manufacturing process is simpler and the manufacturing efficiency is improved.

[0092] Based on the above embodiments, as one implementation, after forming a second metal layer on the second side of the third insulating substrate in step S150 and forming a fourth metal layer on the second side of the fourth insulating substrate in step S160, the second metal layer is processed to form a second upper conductive trace, and the fourth metal layer is processed to form a second lower conductive trace.

[0093] Specifically, before mounting the electronic devices onto the second and fourth metal layers, the second metal layer (not shown in the figure) needs to be processed to form the second upper conductive trace 203, such as... Figure 30 As shown, the fourth metal layer (not shown in the figure) is processed to form the second lower conductive trace 303, as... Figure 31 As shown.

[0094] Figure 32 The exemplary electronic devices are 501, 502, 503 and 504. These electronic devices may include, for example, one or more resistors, capacitors, switching devices (e.g., transistors), integrated circuits and operational amplifiers, etc. This disclosure does not specifically limit them.

[0095] It should be noted that during the formation of the second upper conductive trace 203 on the second metal layer and the formation of the second lower conductive trace 303 on the fourth metal layer, the second upper conductive trace 203 and the second lower conductive trace 303 are formed in appropriate positions within the desired circuit structure of the device. Electronic components can then be surface-mounted onto the second upper conductive trace 203 and the second lower conductive trace 303 and fixed in place, for example, by reflow soldering. One or more of the surface-mount electronic components 501, 502, 503, and 504 are preferably connected to the primary winding of the transformer device, while one or more other electronic components 501, 502, 503, and 504 are preferably connected to the secondary winding of the transformer device.

[0096] also, Figure 32 In the example, electronic devices are represented as 501, 502, 503, and 504. As one possible implementation, such as Figure 33 As shown, a second upper conductive trace 203 is formed on the second side of the upper conductive trace structure, and electronic devices 501 and 502 are mounted on the second upper conductive trace 203. A power receiving device 100 is formed on the second side of the lower conductive trace structure, and a transformer device provides a voltage signal to the power receiving device 100.

[0097] Based on the above embodiments, this disclosure also provides a transformer device. Figure 34 This is a schematic diagram of the structure of a transformer device provided in an embodiment of this disclosure, as shown below. Figure 34 As shown, the transformer device includes: a first insulating substrate 101, the first insulating substrate 101 having a first side and a second side opposite to the first side, the first side of the first insulating substrate including a cavity region and a non-cavity region, the cavity region having a groove 102 formed thereon, the groove 102 having an inner periphery and an outer periphery; The second insulating substrate 104 has a first side and a second side opposite to the first side. A magnetic core 103 is attached to the first side of the second insulating substrate 104 by dispensing adhesive. The magnetic core 103 has a first segment and a second segment. The first side of the second insulating substrate 104 is bonded to the first side of the first insulating substrate 101 by a first adhesive layer 108, and a trench 102 accommodates the magnetic core 103. The first adhesive layer 108 is formed on the first side of the first insulating substrate 101. The upper conductive trace structure 20 and the lower conductive trace structure 30 are provided. A first upper conductive trace 202 is formed on the first side of the upper conductive trace structure 20, and the first side of the upper conductive trace structure 20 is disposed opposite to the second side of the second insulating substrate 104. A first lower conductive trace 302 is formed on the first side of the lower conductive trace structure 30, and the first side of the lower conductive trace structure 30 is disposed opposite to the second side of the first insulating substrate 101. External conductive connector 403 penetrates the first insulating substrate 101 and the second insulating substrate 104 at the outer periphery adjacent to the trench 102, and forms an electrical connection between the corresponding first upper conductive trace 202 and the corresponding first lower conductive trace 302; and The inner conductive connector 404 penetrates the first insulating substrate 101 and the second insulating substrate 104 at the inner periphery of the adjacent trench 102, and the inner conductive connector 404 forms an electrical connection between the corresponding first upper conductive trace 202 and the corresponding first lower conductive trace 302. The first upper conductive trace 202, inner conductive connector 404, outer conductive connector 403 and first lower conductive trace 302 formed around the first section CC of the magnetic core 103 form the primary winding of the transformer device, and the first upper conductive trace 202, inner conductive connector 404, outer conductive connector 403 and first lower conductive trace 302 formed around the second section DD of the magnetic core 103 form the secondary winding of the transformer device.

[0098] The upper conductive trace structure 20 includes a third insulating substrate 201 and a first metal layer disposed on a first side of the third insulating substrate 201. Figure 34 The first metal layer has been processed to form the first upper conductive trace 202) and the second metal layer is disposed on the second side of the third insulating substrate 201. Figure 34 The second metal layer has been processed to form the second upper conductive trace 203; the lower conductive trace structure 30 includes a fourth insulating substrate 301 and a third metal layer disposed on a first side of the fourth insulating substrate 301. Figure 34 The third metal layer has been processed to form the first lower conductive trace 302) and the fourth metal layer is disposed on the second side of the fourth insulating substrate 301. Figure 34The fourth metal layer has been processed to form the second lower conductive trace 303.

[0099] Now refer to Figure 35 The connection method of the first upper conductive trace 202, the first lower conductive trace 302, the inner conductive connector 404, and the outer conductive connector 403, which constitute the transformer windings, is described in more detail. The primary winding of the transformer is shown on the left side of the device, while the secondary winding is shown on the right side. Figure 35 The input and output connections to the transformer windings are also omitted to avoid obscuring details.

[0100] The primary winding of the transformer includes an external conductive connector 403 arranged around the outer periphery of an annular groove 102 containing a magnetic core 103. As shown here, the external conductive connector 403 is arranged in an arc along the outer periphery or outer edge of the groove 102. An internal conductive connector 404 is disposed in the internal central region and is arranged in an arc along the inner periphery or inner edge of the groove 102.

[0101] The secondary winding of the transformer also includes an external conductive connector and an internal conductive connector that are connected to each other in the same manner as the primary winding via corresponding first upper conductive traces and first lower conductive traces.

[0102] Furthermore, despite Figure 35 The diagram illustrates a transformer assembly with one set of primary and one set of secondary windings. Those skilled in the art will understand that the number of winding sets in the transformer assembly can be flexibly configured as needed. For example, the primary winding can have one set, while the secondary winding can have two sets, thus forming a one-to-two transformer assembly. Similarly, windings can be grouped to form other structures such as two-to-two or one-to-three transformer assemblies. Exemplarily, one or more auxiliary transformer windings can be formed using a first conductive via structure, an upper conductive trace, and a lower conductive trace.

[0103] In addition, although Figure 35The example illustrates that the internal conductive connectors corresponding to the primary and secondary windings are uniformly arranged along the inner arc of the trench, while the external conductive connectors are uniformly arranged along the outer arc of the trench. Those skilled in the art will understand that the internal conductive connectors corresponding to one or both of the primary and secondary windings, or the external conductive connectors corresponding to one or both of the primary and secondary windings, can be non-uniformly arranged along the inner or outer arc of the trench. As an example, the internal conductive connectors corresponding to one or both of the primary and secondary windings can be arranged non-uniformly along the inner arc of the trench. Exemplarily, some or all of the internal conductive connectors corresponding to one or both of the primary and secondary windings can be distributed in a curved (e.g., sine, Gaussian) or straight line along the inner arc of the trench. A straight line distribution may be particularly advantageous because they are arranged in a vertical row, further away from the trench, making drilling easier.

[0104] Based on the above embodiments, this disclosure also provides a converter device, including the transformer device described in any of the above embodiments, and having the beneficial effects of any of the above embodiments. Exemplarily, the converter device may be a DC-DC converter, a DC-AC inverter, an AC-DC rectifier, or an AC-AC frequency converter. Furthermore, the converter device can be applied to, but is not limited to, the following scenarios: server power supplies, communication power supplies, industrial drive systems, vehicle power supplies, photovoltaic inverters, energy storage converters, uninterruptible power supplies (UPS), data center power modules, and various power electronic devices with high power density and high isolation requirements.

[0105] Unless otherwise expressly indicated by the context, the singular form of words used herein and in the appended claims includes the plural form, and vice versa. Thus, when referring to the singular, the plural form of the corresponding term is generally included. Similarly, the terms “comprising” and “including” shall be interpreted as including rather than exclusively. Likewise, the terms “including” and “or” shall be interpreted as including unless such interpretation is expressly prohibited herein. Where the term “example” is used herein, particularly when it follows a set of terms, the “example” is merely exemplary and illustrative and should not be considered exclusive or extensive.

[0106] Further aspects and scope of adaptation become apparent from the description provided herein. It should be understood that various aspects of this application may be implemented individually or in combination with one or more other aspects. It should also be understood that the descriptions and specific embodiments herein are for illustrative purposes only and are not intended to limit the scope of this application.

[0107] Several embodiments of this disclosure have been described in detail above. However, it is obvious that those skilled in the art can make various modifications and variations to the embodiments of this disclosure without departing from the spirit and scope of this disclosure. The scope of protection of this disclosure is defined by the appended claims.

Claims

1. A method for manufacturing a transformer device, characterized in that, include: A first insulating substrate is prepared, wherein the first insulating substrate has a first side and a second side opposite to the first side, the first side of the first insulating substrate includes a cavity region and a non-cavity region, and the cavity region is formed with a trench; A second insulating substrate is prepared, wherein the second insulating substrate has a first side and a second side opposite to the first side, and a magnetic core is attached to the first side of the second insulating substrate by dispensing adhesive. The first side of the second insulating substrate is arranged to face the first side of the first insulating substrate; Alignment and bonding operations are performed on the first side of the first insulating substrate and the first side of the second insulating substrate to accommodate the magnetic core in the trench. An upper conductive trace structure is prepared, wherein a first upper conductive trace is formed on the first side of the upper conductive trace structure; A lower conductive trace structure is prepared, wherein a first lower conductive trace is formed on the first side of the lower conductive trace structure; A first through-hole structure is formed on the first insulating substrate and the second insulating substrate, and conductive material is disposed on the sidewalls of the first insulating substrate and the second insulating substrate exposed due to the formation of the first through-hole structure to form a first conductive through-hole structure, wherein the first conductive through-hole structure includes an external conductive connector and an internal conductive connector. The first side of the upper conductive trace structure is bonded to the second side of the second insulating substrate, and the first side of the lower conductive trace structure is bonded to the second side of the first insulating substrate, so that the outer conductive connector is connected to the inner conductive connector through the first upper conductive trace and the first lower conductive trace.

2. The method according to claim 1, characterized in that, The alignment operation includes: Based on the first position information of at least one first alignment mark located on the first insulating substrate in the target coordinate system, and the second position information of at least one second alignment mark located on the second insulating substrate or the magnetic core in the target coordinate system, the target moving distance and target moving direction of the second insulating substrate relative to the first insulating substrate are determined. The second insulating substrate is moved according to the target moving distance and the target moving direction, such that the magnetic core is accommodated in the trench when the first side of the first insulating substrate is bonded to the first side of the second insulating substrate.

3. The method according to claim 2, characterized in that, The at least one first alignment mark is located in the non-cavity region, and the at least one second alignment mark is located on the first side of the second insulating substrate in a portion that does not contact the magnetic core.

4. The method according to claim 2, characterized in that, The at least one first alignment mark is located in the cavity region, and the at least one second alignment mark is located on the first target surface of the magnetic core, wherein the first target surface is opposite to the groove when the magnetic core is housed in the groove.

5. The method according to claim 2, characterized in that, The at least one first alignment mark is located on a portion of the first insulating substrate that is different from the first side and the second side of the first insulating substrate, and the at least one second alignment mark is located on a portion of the second insulating substrate that is different from the first side and the second side of the second insulating substrate.

6. The method according to claim 1, characterized in that, The bonding operation includes: Using a first adhesive layer formed on a first side of the first insulating substrate, the first side of the first insulating substrate is bonded to the first side of the second insulating substrate by a lamination process.

7. The method according to claim 6, characterized in that, The first adhesive layer is formed in the non-cavity region.

8. The method according to claim 6, characterized in that, The first adhesive layer is formed in the non-cavity region and on the bottom wall of the trench.

9. The method according to claim 1, characterized in that, The fabrication of the conductive trace structure includes: A third insulating substrate is prepared, wherein the third insulating substrate has a first side and a second side opposite to the first side; A first metal layer and a second metal layer are formed on the first and second sides of the third insulating substrate, respectively. The first metal layer is processed to form a first upper conductive trace.

10. The method according to claim 1, characterized in that, The fabrication of the lower conductive trace structure includes: A fourth insulating substrate is prepared, wherein the fourth insulating substrate has a first side and a second side opposite to the first side; A third metal layer and a fourth metal layer are formed on the first and second sides of the fourth insulating substrate, respectively. The third metal layer is processed to form a first lower conductive trace.

11. The method according to claim 1, characterized in that, The step of arranging conductive material on the sidewalls exposed due to the formation of the first through-hole structure on the first insulating substrate and the second insulating substrate to form the first conductive through-hole structure includes: Metal material or conductive tubes are formed on the sidewalls of the first insulating substrate and the second insulating substrate exposed due to the formation of the first through-hole structure to form the first conductive through-hole structure.

12. A transformer device, manufactured according to any one of claims 1-11, characterized in that, include: A first insulating substrate has a first side and a second side opposite to the first side. The first side of the first insulating substrate includes a cavity region and a non-cavity region. The cavity region is formed with a trench, which has an inner periphery and an outer periphery. A second insulating substrate has a first side and a second side opposite to the first side. A magnetic core is attached to the first side of the second insulating substrate by dispensing adhesive. The magnetic core has a first segment and a second segment. The first side of the second insulating substrate is bonded to the first side of the first insulating substrate by a first adhesive layer. The trench accommodates the magnetic core. The first adhesive layer is formed on the first side of the first insulating substrate. An upper conductive trace structure and a lower conductive trace structure are provided. A first upper conductive trace is formed on a first side of the upper conductive trace structure, and the first side of the upper conductive trace structure is disposed opposite to the second side of the second insulating substrate. A first lower conductive trace is formed on a first side of the lower conductive trace structure, and the first side of the lower conductive trace structure is disposed opposite to the second side of the first insulating substrate. An external conductive connector, wherein the external conductive connector penetrates the first insulating substrate and the second insulating substrate at the outer periphery adjacent to the trench, and the external conductive connector forms an electrical connection between a corresponding first upper conductive trace and a corresponding first lower conductive trace. as well as An internal conductive connector, wherein the internal conductive connector penetrates the first insulating substrate and the second insulating substrate at the inner periphery adjacent to the trench, and the internal conductive connector forms an electrical connection between a corresponding first upper conductive trace and a corresponding first lower conductive trace; The first upper conductive trace, the inner conductive connector, the outer conductive connector, and the first lower conductive trace formed around the first section of the magnetic core form the primary winding of the transformer device, and the first upper conductive trace, the inner conductive connector, the outer conductive connector, and the first lower conductive trace formed around the second section of the magnetic core form the secondary winding of the transformer device.

13. A converter device, characterized in that, The transformer device includes those prepared by the method according to any one of claims 1-11, or those including the transformer device according to claim 12.

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